Abstract

This study evaluates the effect of crystallinity and point defects on time-dependent photoresponsivity and the cathodoluminescence (CL) properties of β-Ga2O3 epilayers. A synchrotron high-resolution X-ray technique was used to understand the crystalline structure of samples. Rutherford backscattering spectroscopy was used to determine the net chemical composition of the samples to examine the type and ratio of their possible point defects. The results show that in functional time-dependent photoresponsivity of photodetectors based on β-Ga2O3 epilayers, point defects contribution overcomes the contribution of crystallinity. However, the crystalline structure affects the intensities and emission regions of CL spectra more than point defects.

© 2013 Optical Society of America

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. M. Yoshimoto, T. Maeda, T. Ohnishi, H. Koinuma, O. Ishiyama, M. Shinohara, M. Kubo, R. Miura, A. Miyamoto, “Atomic-scale formation of ultrasmooth surfaces on sapphire substrates for high-quality thin-film fabrication,” Appl. Phys. Lett. 67(18), 2615–2617 (1995).
    [CrossRef]
  2. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, H. Hosono, “Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor,” Science 300(5623), 1269–1272 (2003).
    [CrossRef] [PubMed]
  3. M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, P. Yang, “Room-temperature ultraviolet nanowire nanolasers,” Science 292(5523), 1897–1899 (2001).
    [CrossRef] [PubMed]
  4. C. Y. Su, A. Y. Lu, Y. Xu, F. R. Chen, A. N. Khlobystov, L. J. Li, “High-quality thin graphene films from fast electrochemical exfoliation,” ACS Nano 5(3), 2332–2339 (2011).
    [CrossRef] [PubMed]
  5. M. Barhoum, J. M. Morrill, D. Riassetto, M. H. Bartl, “Rapid sol-gel fabrication of high-quality thin-film stacks on planar and curved substrates,” Chem. Mater. 23(23), 5177–5184 (2011).
    [CrossRef]
  6. M. S. Su, C. Y. Kuo, M. C. Yuan, U. S. Jeng, C. J. Su, K. H. Wei, “Improving device efficiency of polymer/fullerene bulk heterojunction solar cells through enhanced crystallinity and reduced grain boundaries induced by solvent additives,” Adv. Mater. 23(29), 3315–3319 (2011).
    [CrossRef] [PubMed]
  7. Y. Hu, Y. Q. Chen, Y. C. Wu, M. J. Wang, G. J. Fang, C. Q. He, S. J. Wang, “Structural, defect and optical properties of ZnO films grown under various O2/Ar gas ratios,” Appl. Surf. Sci. 255(22), 9279–9284 (2009).
    [CrossRef]
  8. L. Hu, L. Wu, M. Liao, X. Fang, “High-performance NiCo2O4 nanofilm photodetectors fabricated by an interfacial self-assembly strategy,” Adv. Mater. 23(17), 1988–1992 (2011).
    [CrossRef] [PubMed]
  9. T. Y. Zhai, X. S. Fang, M. Y. Liao, X. J. Xu, L. Li, B. D. Liu, Y. Koide, Y. Ma, J. N. Yao, Y. Bando, D. Golberg, “Fabrication of high-quality In2Se3 nanowire arrays toward high-performance visible-light photodetectors,” ACS Nano 4(3), 1596–1602 (2010).
    [CrossRef] [PubMed]
  10. H. K. Yadav, K. Sreenivas, V. Gupta, “Study of metal/ZnO based thin film ultraviolet photodetectors: The effect of induced charges on the dynamics of photoconductivity relaxation,” J. Appl. Phys. 107(4), 044507 (2010).
    [CrossRef]
  11. X. Xie, S.-Y. Kwok, Z. Lu, Y. Liu, Y. Cao, L. Luo, J. A. Zapien, I. Bello, C.-S. Lee, S.-T. Lee, W. Zhang, “Visible-NIR photodetectors based on CdTe nanoribbons,” Nanoscale 4(9), 2914–2919 (2012).
    [CrossRef] [PubMed]
  12. M. Chen, C. Ye, S. Zhou, L. Wu, “Recent advances in applications and performance of inorganic hollow spheres in some devices,” Adv. Mater. (to be published).
  13. W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang, H. T. Hsueh, “A β-Ga2O3 solar-blind photodetector prepared by furnace oxidization of GaN thin film,” IEEE Sens. J. 11(4), 999–1003 (2011).
    [CrossRef]
  14. K. Wang, F. Chen, N. Allec, K. S. Karim, “Fast lateral amorphous-selenium metal–semiconductor–metal photodetector with high blue-to-ultraviolet responsivity,” IEEE Trans. Electron. Dev. 57(8), 1953–1958 (2010).
    [CrossRef]
  15. M. M. Cao, R. J. Chacon, C. E. Hunt, “A field emission light source using a reticulated vitreous carbon (RVC) cathode and cathodoluminescent phosphors,” J. Disp. Technol. 7(9), 467–472 (2011).
    [CrossRef]
  16. P. Ravadgar, R. H. Horng, T. Y. Wang, “Healing of surface states and point defects in single-crystalline β-Ga2O3 epilayer,” ECS J. Solid State Sci. Technol. 1(4), N58–N60 (2012).
    [CrossRef]
  17. P. Ravadgar, R. H. Horng, S. L. Ou, “A visualization of threading dislocations formation and dynamics in mosaic growth of GaN-based light emitting diode epitaxial layers on (0001) sapphire,” Appl. Phys. Lett. 101(23), 231911 (2012).
    [CrossRef]
  18. P. Erhart, A. Klein, K. Albe, “First-principles study of the structure and stability of oxygen defects in zinc oxide,” Phys. Rev. B 72(8), 085213 (2005).
    [CrossRef]
  19. J. F. Scott, M. Dawber, “Oxygen-vacancy ordering as a fatigue mechanism in perovskite ferroelectrics,” Appl. Phys. Lett. 76(25), 3801–3803 (2000).
    [CrossRef]
  20. A. S. Foster, V. B. Sulimov, F. L. Gejo, A. L. Shluger, R. N. Nieminen, “Structure and electrical levels of point defects in monoclinic zirconia,” Phys. Rev. B 64(22), 224108 (2001).
    [CrossRef]
  21. A. S. Foster, F. L. Gejo, A. L. Shluger, R. M. Nieminen, “Vacancy and interstitial defects in hafnia,” Phys. Rev. B 65(17), 174117 (2002).
    [CrossRef]
  22. J. B. Varley, J. R. Weber, A. Janotti, C. G. Van de Walle, “Oxygen vacancies and donor impurities in β-Ga2O3,” Appl. Phys. Lett. 97(14), 142106 (2010).
    [CrossRef]
  23. F. Devynck, M. Iannuzzi, M. Krack, “Frenkel pair recombinations in UO2: Importance of explicit description of polarizability in core-shell molecular dynamics simulations,” Phys. Rev. B 85(18), 184103 (2012).
    [CrossRef]
  24. B. J. Morgan, P. A. Madden, “Effects of lattice polarity on interfacial space charges and defect disorder in ionically conducting AgI heterostructures,” Phys. Rev. Lett. 107(20), 206102 (2011).
    [CrossRef] [PubMed]
  25. J. P. Crocombette, D. Torumba, A. Chartier, “Charge states of point defects in uranium oxide calculated with a local hybrid functional for correlated electrons,” Phys. Rev. B 83(18), 184107 (2011).
    [CrossRef]
  26. Z. L. Wang, J. S. Yin, Y. D. Jiang, “EELS analysis of cation valence states and oxygen vacancies in magnetic oxides,” Micron 31(5), 571–580 (2000).
    [CrossRef] [PubMed]
  27. A. Linsebigler, G. Lu, J. T. Yates, “CO chemisorption on TiO2(110): Oxygen vacancy site influence on CO adsorption,” J. Chem. Phys. 103(21), 9438–9443 (1995).
    [CrossRef]
  28. J. Hao, M. Cocivera, “Optical and luminescent properties of undoped and rare-earth-doped Ga2O3 thin films deposited by spray pyrolysis,” J. Phys. D Appl. Phys. 35(5), 433–438 (2002).
    [CrossRef]
  29. C. H. Liang, G. W. Meng, G. Z. Wang, Y. W. Wang, L. D. Zhang, S. Y. Zhang, “Catalytic synthesis and photoluminescence of β-Ga2O3 nanowires,” Appl. Phys. Lett. 78(21), 3202–3204 (2001).
    [CrossRef]
  30. S. C. Vanithakumari, K. K. Nanda, “A one-step method for the growth of Ga2O3-nanorod-based white-light-emitting phosphors,” Adv. Mater. 21(35), 3581–3584 (2009).
    [CrossRef]
  31. D. M. Duffy, J. P. Hoare, P. W. Tasker, “Vacancy formation energies near the surface of an ionic crystal,” J. Phys. C Solid State Phys. 17(7), L195–L199 (1984).
    [CrossRef]
  32. W. Tian, C. Y. Zhi, T. Y. Zhai, S. M. Chen, X. Wang, M. Y. Liao, D. Golberg, Y. Bando, “In-doped Ga2O3 nanobelt based photodetector with high sensitivity and wide-range photoresponse,” J. Mater. Chem. 22(34), 17984–17991 (2012).
    [CrossRef]
  33. W. Tian, C. Y. Zhi, T. Y. Zhai, X. Wang, M. Y. Liao, S. L. Li, S. M. Chen, D. Golberg, Y. Bando, “Ultrahigh quantum efficiency of CuO nanoparticle decorated In2Ge2O7 nanobelt deep-ultraviolet photodetectors,” Nanoscale 4(20), 6318–6324 (2012).
    [CrossRef] [PubMed]
  34. Y. B. Li, T. Tokizono, M. Y. Liao, M. Zhong, Y. Koide, I. Yamada, J. J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
    [CrossRef]
  35. T. C. Lovejoy, R. Chen, X. Zheng, E. G. Villora, K. Shimamura, H. Yoshikawa, Y. Yamashita, S. Ueda, K. Kobayashi, S. T. Dunham, F. S. Ohuchi, M. A. Olmstead, “Band bending and surface defects in β-Ga2O3,” Appl. Phys. Lett. 100(18), 181602 (2012).
    [CrossRef]

2012 (7)

X. Xie, S.-Y. Kwok, Z. Lu, Y. Liu, Y. Cao, L. Luo, J. A. Zapien, I. Bello, C.-S. Lee, S.-T. Lee, W. Zhang, “Visible-NIR photodetectors based on CdTe nanoribbons,” Nanoscale 4(9), 2914–2919 (2012).
[CrossRef] [PubMed]

P. Ravadgar, R. H. Horng, T. Y. Wang, “Healing of surface states and point defects in single-crystalline β-Ga2O3 epilayer,” ECS J. Solid State Sci. Technol. 1(4), N58–N60 (2012).
[CrossRef]

P. Ravadgar, R. H. Horng, S. L. Ou, “A visualization of threading dislocations formation and dynamics in mosaic growth of GaN-based light emitting diode epitaxial layers on (0001) sapphire,” Appl. Phys. Lett. 101(23), 231911 (2012).
[CrossRef]

F. Devynck, M. Iannuzzi, M. Krack, “Frenkel pair recombinations in UO2: Importance of explicit description of polarizability in core-shell molecular dynamics simulations,” Phys. Rev. B 85(18), 184103 (2012).
[CrossRef]

W. Tian, C. Y. Zhi, T. Y. Zhai, S. M. Chen, X. Wang, M. Y. Liao, D. Golberg, Y. Bando, “In-doped Ga2O3 nanobelt based photodetector with high sensitivity and wide-range photoresponse,” J. Mater. Chem. 22(34), 17984–17991 (2012).
[CrossRef]

W. Tian, C. Y. Zhi, T. Y. Zhai, X. Wang, M. Y. Liao, S. L. Li, S. M. Chen, D. Golberg, Y. Bando, “Ultrahigh quantum efficiency of CuO nanoparticle decorated In2Ge2O7 nanobelt deep-ultraviolet photodetectors,” Nanoscale 4(20), 6318–6324 (2012).
[CrossRef] [PubMed]

T. C. Lovejoy, R. Chen, X. Zheng, E. G. Villora, K. Shimamura, H. Yoshikawa, Y. Yamashita, S. Ueda, K. Kobayashi, S. T. Dunham, F. S. Ohuchi, M. A. Olmstead, “Band bending and surface defects in β-Ga2O3,” Appl. Phys. Lett. 100(18), 181602 (2012).
[CrossRef]

2011 (8)

B. J. Morgan, P. A. Madden, “Effects of lattice polarity on interfacial space charges and defect disorder in ionically conducting AgI heterostructures,” Phys. Rev. Lett. 107(20), 206102 (2011).
[CrossRef] [PubMed]

J. P. Crocombette, D. Torumba, A. Chartier, “Charge states of point defects in uranium oxide calculated with a local hybrid functional for correlated electrons,” Phys. Rev. B 83(18), 184107 (2011).
[CrossRef]

W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang, H. T. Hsueh, “A β-Ga2O3 solar-blind photodetector prepared by furnace oxidization of GaN thin film,” IEEE Sens. J. 11(4), 999–1003 (2011).
[CrossRef]

M. M. Cao, R. J. Chacon, C. E. Hunt, “A field emission light source using a reticulated vitreous carbon (RVC) cathode and cathodoluminescent phosphors,” J. Disp. Technol. 7(9), 467–472 (2011).
[CrossRef]

C. Y. Su, A. Y. Lu, Y. Xu, F. R. Chen, A. N. Khlobystov, L. J. Li, “High-quality thin graphene films from fast electrochemical exfoliation,” ACS Nano 5(3), 2332–2339 (2011).
[CrossRef] [PubMed]

M. Barhoum, J. M. Morrill, D. Riassetto, M. H. Bartl, “Rapid sol-gel fabrication of high-quality thin-film stacks on planar and curved substrates,” Chem. Mater. 23(23), 5177–5184 (2011).
[CrossRef]

M. S. Su, C. Y. Kuo, M. C. Yuan, U. S. Jeng, C. J. Su, K. H. Wei, “Improving device efficiency of polymer/fullerene bulk heterojunction solar cells through enhanced crystallinity and reduced grain boundaries induced by solvent additives,” Adv. Mater. 23(29), 3315–3319 (2011).
[CrossRef] [PubMed]

L. Hu, L. Wu, M. Liao, X. Fang, “High-performance NiCo2O4 nanofilm photodetectors fabricated by an interfacial self-assembly strategy,” Adv. Mater. 23(17), 1988–1992 (2011).
[CrossRef] [PubMed]

2010 (5)

T. Y. Zhai, X. S. Fang, M. Y. Liao, X. J. Xu, L. Li, B. D. Liu, Y. Koide, Y. Ma, J. N. Yao, Y. Bando, D. Golberg, “Fabrication of high-quality In2Se3 nanowire arrays toward high-performance visible-light photodetectors,” ACS Nano 4(3), 1596–1602 (2010).
[CrossRef] [PubMed]

H. K. Yadav, K. Sreenivas, V. Gupta, “Study of metal/ZnO based thin film ultraviolet photodetectors: The effect of induced charges on the dynamics of photoconductivity relaxation,” J. Appl. Phys. 107(4), 044507 (2010).
[CrossRef]

K. Wang, F. Chen, N. Allec, K. S. Karim, “Fast lateral amorphous-selenium metal–semiconductor–metal photodetector with high blue-to-ultraviolet responsivity,” IEEE Trans. Electron. Dev. 57(8), 1953–1958 (2010).
[CrossRef]

J. B. Varley, J. R. Weber, A. Janotti, C. G. Van de Walle, “Oxygen vacancies and donor impurities in β-Ga2O3,” Appl. Phys. Lett. 97(14), 142106 (2010).
[CrossRef]

Y. B. Li, T. Tokizono, M. Y. Liao, M. Zhong, Y. Koide, I. Yamada, J. J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[CrossRef]

2009 (2)

S. C. Vanithakumari, K. K. Nanda, “A one-step method for the growth of Ga2O3-nanorod-based white-light-emitting phosphors,” Adv. Mater. 21(35), 3581–3584 (2009).
[CrossRef]

Y. Hu, Y. Q. Chen, Y. C. Wu, M. J. Wang, G. J. Fang, C. Q. He, S. J. Wang, “Structural, defect and optical properties of ZnO films grown under various O2/Ar gas ratios,” Appl. Surf. Sci. 255(22), 9279–9284 (2009).
[CrossRef]

2005 (1)

P. Erhart, A. Klein, K. Albe, “First-principles study of the structure and stability of oxygen defects in zinc oxide,” Phys. Rev. B 72(8), 085213 (2005).
[CrossRef]

2003 (1)

K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, H. Hosono, “Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor,” Science 300(5623), 1269–1272 (2003).
[CrossRef] [PubMed]

2002 (2)

A. S. Foster, F. L. Gejo, A. L. Shluger, R. M. Nieminen, “Vacancy and interstitial defects in hafnia,” Phys. Rev. B 65(17), 174117 (2002).
[CrossRef]

J. Hao, M. Cocivera, “Optical and luminescent properties of undoped and rare-earth-doped Ga2O3 thin films deposited by spray pyrolysis,” J. Phys. D Appl. Phys. 35(5), 433–438 (2002).
[CrossRef]

2001 (3)

C. H. Liang, G. W. Meng, G. Z. Wang, Y. W. Wang, L. D. Zhang, S. Y. Zhang, “Catalytic synthesis and photoluminescence of β-Ga2O3 nanowires,” Appl. Phys. Lett. 78(21), 3202–3204 (2001).
[CrossRef]

A. S. Foster, V. B. Sulimov, F. L. Gejo, A. L. Shluger, R. N. Nieminen, “Structure and electrical levels of point defects in monoclinic zirconia,” Phys. Rev. B 64(22), 224108 (2001).
[CrossRef]

M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, P. Yang, “Room-temperature ultraviolet nanowire nanolasers,” Science 292(5523), 1897–1899 (2001).
[CrossRef] [PubMed]

2000 (2)

J. F. Scott, M. Dawber, “Oxygen-vacancy ordering as a fatigue mechanism in perovskite ferroelectrics,” Appl. Phys. Lett. 76(25), 3801–3803 (2000).
[CrossRef]

Z. L. Wang, J. S. Yin, Y. D. Jiang, “EELS analysis of cation valence states and oxygen vacancies in magnetic oxides,” Micron 31(5), 571–580 (2000).
[CrossRef] [PubMed]

1995 (2)

A. Linsebigler, G. Lu, J. T. Yates, “CO chemisorption on TiO2(110): Oxygen vacancy site influence on CO adsorption,” J. Chem. Phys. 103(21), 9438–9443 (1995).
[CrossRef]

M. Yoshimoto, T. Maeda, T. Ohnishi, H. Koinuma, O. Ishiyama, M. Shinohara, M. Kubo, R. Miura, A. Miyamoto, “Atomic-scale formation of ultrasmooth surfaces on sapphire substrates for high-quality thin-film fabrication,” Appl. Phys. Lett. 67(18), 2615–2617 (1995).
[CrossRef]

1984 (1)

D. M. Duffy, J. P. Hoare, P. W. Tasker, “Vacancy formation energies near the surface of an ionic crystal,” J. Phys. C Solid State Phys. 17(7), L195–L199 (1984).
[CrossRef]

Albe, K.

P. Erhart, A. Klein, K. Albe, “First-principles study of the structure and stability of oxygen defects in zinc oxide,” Phys. Rev. B 72(8), 085213 (2005).
[CrossRef]

Allec, N.

K. Wang, F. Chen, N. Allec, K. S. Karim, “Fast lateral amorphous-selenium metal–semiconductor–metal photodetector with high blue-to-ultraviolet responsivity,” IEEE Trans. Electron. Dev. 57(8), 1953–1958 (2010).
[CrossRef]

Bando, Y.

W. Tian, C. Y. Zhi, T. Y. Zhai, S. M. Chen, X. Wang, M. Y. Liao, D. Golberg, Y. Bando, “In-doped Ga2O3 nanobelt based photodetector with high sensitivity and wide-range photoresponse,” J. Mater. Chem. 22(34), 17984–17991 (2012).
[CrossRef]

W. Tian, C. Y. Zhi, T. Y. Zhai, X. Wang, M. Y. Liao, S. L. Li, S. M. Chen, D. Golberg, Y. Bando, “Ultrahigh quantum efficiency of CuO nanoparticle decorated In2Ge2O7 nanobelt deep-ultraviolet photodetectors,” Nanoscale 4(20), 6318–6324 (2012).
[CrossRef] [PubMed]

T. Y. Zhai, X. S. Fang, M. Y. Liao, X. J. Xu, L. Li, B. D. Liu, Y. Koide, Y. Ma, J. N. Yao, Y. Bando, D. Golberg, “Fabrication of high-quality In2Se3 nanowire arrays toward high-performance visible-light photodetectors,” ACS Nano 4(3), 1596–1602 (2010).
[CrossRef] [PubMed]

Barhoum, M.

M. Barhoum, J. M. Morrill, D. Riassetto, M. H. Bartl, “Rapid sol-gel fabrication of high-quality thin-film stacks on planar and curved substrates,” Chem. Mater. 23(23), 5177–5184 (2011).
[CrossRef]

Bartl, M. H.

M. Barhoum, J. M. Morrill, D. Riassetto, M. H. Bartl, “Rapid sol-gel fabrication of high-quality thin-film stacks on planar and curved substrates,” Chem. Mater. 23(23), 5177–5184 (2011).
[CrossRef]

Bello, I.

X. Xie, S.-Y. Kwok, Z. Lu, Y. Liu, Y. Cao, L. Luo, J. A. Zapien, I. Bello, C.-S. Lee, S.-T. Lee, W. Zhang, “Visible-NIR photodetectors based on CdTe nanoribbons,” Nanoscale 4(9), 2914–2919 (2012).
[CrossRef] [PubMed]

Cao, M. M.

M. M. Cao, R. J. Chacon, C. E. Hunt, “A field emission light source using a reticulated vitreous carbon (RVC) cathode and cathodoluminescent phosphors,” J. Disp. Technol. 7(9), 467–472 (2011).
[CrossRef]

Cao, Y.

X. Xie, S.-Y. Kwok, Z. Lu, Y. Liu, Y. Cao, L. Luo, J. A. Zapien, I. Bello, C.-S. Lee, S.-T. Lee, W. Zhang, “Visible-NIR photodetectors based on CdTe nanoribbons,” Nanoscale 4(9), 2914–2919 (2012).
[CrossRef] [PubMed]

Chacon, R. J.

M. M. Cao, R. J. Chacon, C. E. Hunt, “A field emission light source using a reticulated vitreous carbon (RVC) cathode and cathodoluminescent phosphors,” J. Disp. Technol. 7(9), 467–472 (2011).
[CrossRef]

Chang, S. J.

W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang, H. T. Hsueh, “A β-Ga2O3 solar-blind photodetector prepared by furnace oxidization of GaN thin film,” IEEE Sens. J. 11(4), 999–1003 (2011).
[CrossRef]

Chartier, A.

J. P. Crocombette, D. Torumba, A. Chartier, “Charge states of point defects in uranium oxide calculated with a local hybrid functional for correlated electrons,” Phys. Rev. B 83(18), 184107 (2011).
[CrossRef]

Chen, F.

K. Wang, F. Chen, N. Allec, K. S. Karim, “Fast lateral amorphous-selenium metal–semiconductor–metal photodetector with high blue-to-ultraviolet responsivity,” IEEE Trans. Electron. Dev. 57(8), 1953–1958 (2010).
[CrossRef]

Chen, F. R.

C. Y. Su, A. Y. Lu, Y. Xu, F. R. Chen, A. N. Khlobystov, L. J. Li, “High-quality thin graphene films from fast electrochemical exfoliation,” ACS Nano 5(3), 2332–2339 (2011).
[CrossRef] [PubMed]

Chen, M.

M. Chen, C. Ye, S. Zhou, L. Wu, “Recent advances in applications and performance of inorganic hollow spheres in some devices,” Adv. Mater. (to be published).

Chen, R.

T. C. Lovejoy, R. Chen, X. Zheng, E. G. Villora, K. Shimamura, H. Yoshikawa, Y. Yamashita, S. Ueda, K. Kobayashi, S. T. Dunham, F. S. Ohuchi, M. A. Olmstead, “Band bending and surface defects in β-Ga2O3,” Appl. Phys. Lett. 100(18), 181602 (2012).
[CrossRef]

Chen, S. M.

W. Tian, C. Y. Zhi, T. Y. Zhai, S. M. Chen, X. Wang, M. Y. Liao, D. Golberg, Y. Bando, “In-doped Ga2O3 nanobelt based photodetector with high sensitivity and wide-range photoresponse,” J. Mater. Chem. 22(34), 17984–17991 (2012).
[CrossRef]

W. Tian, C. Y. Zhi, T. Y. Zhai, X. Wang, M. Y. Liao, S. L. Li, S. M. Chen, D. Golberg, Y. Bando, “Ultrahigh quantum efficiency of CuO nanoparticle decorated In2Ge2O7 nanobelt deep-ultraviolet photodetectors,” Nanoscale 4(20), 6318–6324 (2012).
[CrossRef] [PubMed]

Chen, Y. Q.

Y. Hu, Y. Q. Chen, Y. C. Wu, M. J. Wang, G. J. Fang, C. Q. He, S. J. Wang, “Structural, defect and optical properties of ZnO films grown under various O2/Ar gas ratios,” Appl. Surf. Sci. 255(22), 9279–9284 (2009).
[CrossRef]

Cocivera, M.

J. Hao, M. Cocivera, “Optical and luminescent properties of undoped and rare-earth-doped Ga2O3 thin films deposited by spray pyrolysis,” J. Phys. D Appl. Phys. 35(5), 433–438 (2002).
[CrossRef]

Crocombette, J. P.

J. P. Crocombette, D. Torumba, A. Chartier, “Charge states of point defects in uranium oxide calculated with a local hybrid functional for correlated electrons,” Phys. Rev. B 83(18), 184107 (2011).
[CrossRef]

Dawber, M.

J. F. Scott, M. Dawber, “Oxygen-vacancy ordering as a fatigue mechanism in perovskite ferroelectrics,” Appl. Phys. Lett. 76(25), 3801–3803 (2000).
[CrossRef]

Delaunay, J. J.

Y. B. Li, T. Tokizono, M. Y. Liao, M. Zhong, Y. Koide, I. Yamada, J. J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[CrossRef]

Devynck, F.

F. Devynck, M. Iannuzzi, M. Krack, “Frenkel pair recombinations in UO2: Importance of explicit description of polarizability in core-shell molecular dynamics simulations,” Phys. Rev. B 85(18), 184103 (2012).
[CrossRef]

Duffy, D. M.

D. M. Duffy, J. P. Hoare, P. W. Tasker, “Vacancy formation energies near the surface of an ionic crystal,” J. Phys. C Solid State Phys. 17(7), L195–L199 (1984).
[CrossRef]

Dunham, S. T.

T. C. Lovejoy, R. Chen, X. Zheng, E. G. Villora, K. Shimamura, H. Yoshikawa, Y. Yamashita, S. Ueda, K. Kobayashi, S. T. Dunham, F. S. Ohuchi, M. A. Olmstead, “Band bending and surface defects in β-Ga2O3,” Appl. Phys. Lett. 100(18), 181602 (2012).
[CrossRef]

Erhart, P.

P. Erhart, A. Klein, K. Albe, “First-principles study of the structure and stability of oxygen defects in zinc oxide,” Phys. Rev. B 72(8), 085213 (2005).
[CrossRef]

Fang, G. J.

Y. Hu, Y. Q. Chen, Y. C. Wu, M. J. Wang, G. J. Fang, C. Q. He, S. J. Wang, “Structural, defect and optical properties of ZnO films grown under various O2/Ar gas ratios,” Appl. Surf. Sci. 255(22), 9279–9284 (2009).
[CrossRef]

Fang, X.

L. Hu, L. Wu, M. Liao, X. Fang, “High-performance NiCo2O4 nanofilm photodetectors fabricated by an interfacial self-assembly strategy,” Adv. Mater. 23(17), 1988–1992 (2011).
[CrossRef] [PubMed]

Fang, X. S.

T. Y. Zhai, X. S. Fang, M. Y. Liao, X. J. Xu, L. Li, B. D. Liu, Y. Koide, Y. Ma, J. N. Yao, Y. Bando, D. Golberg, “Fabrication of high-quality In2Se3 nanowire arrays toward high-performance visible-light photodetectors,” ACS Nano 4(3), 1596–1602 (2010).
[CrossRef] [PubMed]

Feick, H.

M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, P. Yang, “Room-temperature ultraviolet nanowire nanolasers,” Science 292(5523), 1897–1899 (2001).
[CrossRef] [PubMed]

Foster, A. S.

A. S. Foster, F. L. Gejo, A. L. Shluger, R. M. Nieminen, “Vacancy and interstitial defects in hafnia,” Phys. Rev. B 65(17), 174117 (2002).
[CrossRef]

A. S. Foster, V. B. Sulimov, F. L. Gejo, A. L. Shluger, R. N. Nieminen, “Structure and electrical levels of point defects in monoclinic zirconia,” Phys. Rev. B 64(22), 224108 (2001).
[CrossRef]

Gejo, F. L.

A. S. Foster, F. L. Gejo, A. L. Shluger, R. M. Nieminen, “Vacancy and interstitial defects in hafnia,” Phys. Rev. B 65(17), 174117 (2002).
[CrossRef]

A. S. Foster, V. B. Sulimov, F. L. Gejo, A. L. Shluger, R. N. Nieminen, “Structure and electrical levels of point defects in monoclinic zirconia,” Phys. Rev. B 64(22), 224108 (2001).
[CrossRef]

Golberg, D.

W. Tian, C. Y. Zhi, T. Y. Zhai, S. M. Chen, X. Wang, M. Y. Liao, D. Golberg, Y. Bando, “In-doped Ga2O3 nanobelt based photodetector with high sensitivity and wide-range photoresponse,” J. Mater. Chem. 22(34), 17984–17991 (2012).
[CrossRef]

W. Tian, C. Y. Zhi, T. Y. Zhai, X. Wang, M. Y. Liao, S. L. Li, S. M. Chen, D. Golberg, Y. Bando, “Ultrahigh quantum efficiency of CuO nanoparticle decorated In2Ge2O7 nanobelt deep-ultraviolet photodetectors,” Nanoscale 4(20), 6318–6324 (2012).
[CrossRef] [PubMed]

T. Y. Zhai, X. S. Fang, M. Y. Liao, X. J. Xu, L. Li, B. D. Liu, Y. Koide, Y. Ma, J. N. Yao, Y. Bando, D. Golberg, “Fabrication of high-quality In2Se3 nanowire arrays toward high-performance visible-light photodetectors,” ACS Nano 4(3), 1596–1602 (2010).
[CrossRef] [PubMed]

Gupta, V.

H. K. Yadav, K. Sreenivas, V. Gupta, “Study of metal/ZnO based thin film ultraviolet photodetectors: The effect of induced charges on the dynamics of photoconductivity relaxation,” J. Appl. Phys. 107(4), 044507 (2010).
[CrossRef]

Hao, J.

J. Hao, M. Cocivera, “Optical and luminescent properties of undoped and rare-earth-doped Ga2O3 thin films deposited by spray pyrolysis,” J. Phys. D Appl. Phys. 35(5), 433–438 (2002).
[CrossRef]

He, C. Q.

Y. Hu, Y. Q. Chen, Y. C. Wu, M. J. Wang, G. J. Fang, C. Q. He, S. J. Wang, “Structural, defect and optical properties of ZnO films grown under various O2/Ar gas ratios,” Appl. Surf. Sci. 255(22), 9279–9284 (2009).
[CrossRef]

Hirano, M.

K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, H. Hosono, “Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor,” Science 300(5623), 1269–1272 (2003).
[CrossRef] [PubMed]

Hoare, J. P.

D. M. Duffy, J. P. Hoare, P. W. Tasker, “Vacancy formation energies near the surface of an ionic crystal,” J. Phys. C Solid State Phys. 17(7), L195–L199 (1984).
[CrossRef]

Horng, R. H.

P. Ravadgar, R. H. Horng, S. L. Ou, “A visualization of threading dislocations formation and dynamics in mosaic growth of GaN-based light emitting diode epitaxial layers on (0001) sapphire,” Appl. Phys. Lett. 101(23), 231911 (2012).
[CrossRef]

P. Ravadgar, R. H. Horng, T. Y. Wang, “Healing of surface states and point defects in single-crystalline β-Ga2O3 epilayer,” ECS J. Solid State Sci. Technol. 1(4), N58–N60 (2012).
[CrossRef]

Hosono, H.

K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, H. Hosono, “Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor,” Science 300(5623), 1269–1272 (2003).
[CrossRef] [PubMed]

Hsueh, H. T.

W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang, H. T. Hsueh, “A β-Ga2O3 solar-blind photodetector prepared by furnace oxidization of GaN thin film,” IEEE Sens. J. 11(4), 999–1003 (2011).
[CrossRef]

Hsueh, T. J.

W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang, H. T. Hsueh, “A β-Ga2O3 solar-blind photodetector prepared by furnace oxidization of GaN thin film,” IEEE Sens. J. 11(4), 999–1003 (2011).
[CrossRef]

Hu, L.

L. Hu, L. Wu, M. Liao, X. Fang, “High-performance NiCo2O4 nanofilm photodetectors fabricated by an interfacial self-assembly strategy,” Adv. Mater. 23(17), 1988–1992 (2011).
[CrossRef] [PubMed]

Hu, Y.

Y. Hu, Y. Q. Chen, Y. C. Wu, M. J. Wang, G. J. Fang, C. Q. He, S. J. Wang, “Structural, defect and optical properties of ZnO films grown under various O2/Ar gas ratios,” Appl. Surf. Sci. 255(22), 9279–9284 (2009).
[CrossRef]

Huang, G. J.

W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang, H. T. Hsueh, “A β-Ga2O3 solar-blind photodetector prepared by furnace oxidization of GaN thin film,” IEEE Sens. J. 11(4), 999–1003 (2011).
[CrossRef]

Huang, M. H.

M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, P. Yang, “Room-temperature ultraviolet nanowire nanolasers,” Science 292(5523), 1897–1899 (2001).
[CrossRef] [PubMed]

Hunt, C. E.

M. M. Cao, R. J. Chacon, C. E. Hunt, “A field emission light source using a reticulated vitreous carbon (RVC) cathode and cathodoluminescent phosphors,” J. Disp. Technol. 7(9), 467–472 (2011).
[CrossRef]

Iannuzzi, M.

F. Devynck, M. Iannuzzi, M. Krack, “Frenkel pair recombinations in UO2: Importance of explicit description of polarizability in core-shell molecular dynamics simulations,” Phys. Rev. B 85(18), 184103 (2012).
[CrossRef]

Ishiyama, O.

M. Yoshimoto, T. Maeda, T. Ohnishi, H. Koinuma, O. Ishiyama, M. Shinohara, M. Kubo, R. Miura, A. Miyamoto, “Atomic-scale formation of ultrasmooth surfaces on sapphire substrates for high-quality thin-film fabrication,” Appl. Phys. Lett. 67(18), 2615–2617 (1995).
[CrossRef]

Janotti, A.

J. B. Varley, J. R. Weber, A. Janotti, C. G. Van de Walle, “Oxygen vacancies and donor impurities in β-Ga2O3,” Appl. Phys. Lett. 97(14), 142106 (2010).
[CrossRef]

Jeng, U. S.

M. S. Su, C. Y. Kuo, M. C. Yuan, U. S. Jeng, C. J. Su, K. H. Wei, “Improving device efficiency of polymer/fullerene bulk heterojunction solar cells through enhanced crystallinity and reduced grain boundaries induced by solvent additives,” Adv. Mater. 23(29), 3315–3319 (2011).
[CrossRef] [PubMed]

Jiang, Y. D.

Z. L. Wang, J. S. Yin, Y. D. Jiang, “EELS analysis of cation valence states and oxygen vacancies in magnetic oxides,” Micron 31(5), 571–580 (2000).
[CrossRef] [PubMed]

Kamiya, T.

K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, H. Hosono, “Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor,” Science 300(5623), 1269–1272 (2003).
[CrossRef] [PubMed]

Karim, K. S.

K. Wang, F. Chen, N. Allec, K. S. Karim, “Fast lateral amorphous-selenium metal–semiconductor–metal photodetector with high blue-to-ultraviolet responsivity,” IEEE Trans. Electron. Dev. 57(8), 1953–1958 (2010).
[CrossRef]

Khlobystov, A. N.

C. Y. Su, A. Y. Lu, Y. Xu, F. R. Chen, A. N. Khlobystov, L. J. Li, “High-quality thin graphene films from fast electrochemical exfoliation,” ACS Nano 5(3), 2332–2339 (2011).
[CrossRef] [PubMed]

Kind, H.

M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, P. Yang, “Room-temperature ultraviolet nanowire nanolasers,” Science 292(5523), 1897–1899 (2001).
[CrossRef] [PubMed]

Klein, A.

P. Erhart, A. Klein, K. Albe, “First-principles study of the structure and stability of oxygen defects in zinc oxide,” Phys. Rev. B 72(8), 085213 (2005).
[CrossRef]

Kobayashi, K.

T. C. Lovejoy, R. Chen, X. Zheng, E. G. Villora, K. Shimamura, H. Yoshikawa, Y. Yamashita, S. Ueda, K. Kobayashi, S. T. Dunham, F. S. Ohuchi, M. A. Olmstead, “Band bending and surface defects in β-Ga2O3,” Appl. Phys. Lett. 100(18), 181602 (2012).
[CrossRef]

Koide, Y.

T. Y. Zhai, X. S. Fang, M. Y. Liao, X. J. Xu, L. Li, B. D. Liu, Y. Koide, Y. Ma, J. N. Yao, Y. Bando, D. Golberg, “Fabrication of high-quality In2Se3 nanowire arrays toward high-performance visible-light photodetectors,” ACS Nano 4(3), 1596–1602 (2010).
[CrossRef] [PubMed]

Y. B. Li, T. Tokizono, M. Y. Liao, M. Zhong, Y. Koide, I. Yamada, J. J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[CrossRef]

Koinuma, H.

M. Yoshimoto, T. Maeda, T. Ohnishi, H. Koinuma, O. Ishiyama, M. Shinohara, M. Kubo, R. Miura, A. Miyamoto, “Atomic-scale formation of ultrasmooth surfaces on sapphire substrates for high-quality thin-film fabrication,” Appl. Phys. Lett. 67(18), 2615–2617 (1995).
[CrossRef]

Krack, M.

F. Devynck, M. Iannuzzi, M. Krack, “Frenkel pair recombinations in UO2: Importance of explicit description of polarizability in core-shell molecular dynamics simulations,” Phys. Rev. B 85(18), 184103 (2012).
[CrossRef]

Kubo, M.

M. Yoshimoto, T. Maeda, T. Ohnishi, H. Koinuma, O. Ishiyama, M. Shinohara, M. Kubo, R. Miura, A. Miyamoto, “Atomic-scale formation of ultrasmooth surfaces on sapphire substrates for high-quality thin-film fabrication,” Appl. Phys. Lett. 67(18), 2615–2617 (1995).
[CrossRef]

Kuo, C. Y.

M. S. Su, C. Y. Kuo, M. C. Yuan, U. S. Jeng, C. J. Su, K. H. Wei, “Improving device efficiency of polymer/fullerene bulk heterojunction solar cells through enhanced crystallinity and reduced grain boundaries induced by solvent additives,” Adv. Mater. 23(29), 3315–3319 (2011).
[CrossRef] [PubMed]

Kwok, S.-Y.

X. Xie, S.-Y. Kwok, Z. Lu, Y. Liu, Y. Cao, L. Luo, J. A. Zapien, I. Bello, C.-S. Lee, S.-T. Lee, W. Zhang, “Visible-NIR photodetectors based on CdTe nanoribbons,” Nanoscale 4(9), 2914–2919 (2012).
[CrossRef] [PubMed]

Lee, C.-S.

X. Xie, S.-Y. Kwok, Z. Lu, Y. Liu, Y. Cao, L. Luo, J. A. Zapien, I. Bello, C.-S. Lee, S.-T. Lee, W. Zhang, “Visible-NIR photodetectors based on CdTe nanoribbons,” Nanoscale 4(9), 2914–2919 (2012).
[CrossRef] [PubMed]

Lee, S.-T.

X. Xie, S.-Y. Kwok, Z. Lu, Y. Liu, Y. Cao, L. Luo, J. A. Zapien, I. Bello, C.-S. Lee, S.-T. Lee, W. Zhang, “Visible-NIR photodetectors based on CdTe nanoribbons,” Nanoscale 4(9), 2914–2919 (2012).
[CrossRef] [PubMed]

Li, L.

T. Y. Zhai, X. S. Fang, M. Y. Liao, X. J. Xu, L. Li, B. D. Liu, Y. Koide, Y. Ma, J. N. Yao, Y. Bando, D. Golberg, “Fabrication of high-quality In2Se3 nanowire arrays toward high-performance visible-light photodetectors,” ACS Nano 4(3), 1596–1602 (2010).
[CrossRef] [PubMed]

Li, L. J.

C. Y. Su, A. Y. Lu, Y. Xu, F. R. Chen, A. N. Khlobystov, L. J. Li, “High-quality thin graphene films from fast electrochemical exfoliation,” ACS Nano 5(3), 2332–2339 (2011).
[CrossRef] [PubMed]

Li, S. L.

W. Tian, C. Y. Zhi, T. Y. Zhai, X. Wang, M. Y. Liao, S. L. Li, S. M. Chen, D. Golberg, Y. Bando, “Ultrahigh quantum efficiency of CuO nanoparticle decorated In2Ge2O7 nanobelt deep-ultraviolet photodetectors,” Nanoscale 4(20), 6318–6324 (2012).
[CrossRef] [PubMed]

Li, Y. B.

Y. B. Li, T. Tokizono, M. Y. Liao, M. Zhong, Y. Koide, I. Yamada, J. J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[CrossRef]

Liang, C. H.

C. H. Liang, G. W. Meng, G. Z. Wang, Y. W. Wang, L. D. Zhang, S. Y. Zhang, “Catalytic synthesis and photoluminescence of β-Ga2O3 nanowires,” Appl. Phys. Lett. 78(21), 3202–3204 (2001).
[CrossRef]

Liao, M.

L. Hu, L. Wu, M. Liao, X. Fang, “High-performance NiCo2O4 nanofilm photodetectors fabricated by an interfacial self-assembly strategy,” Adv. Mater. 23(17), 1988–1992 (2011).
[CrossRef] [PubMed]

Liao, M. Y.

W. Tian, C. Y. Zhi, T. Y. Zhai, X. Wang, M. Y. Liao, S. L. Li, S. M. Chen, D. Golberg, Y. Bando, “Ultrahigh quantum efficiency of CuO nanoparticle decorated In2Ge2O7 nanobelt deep-ultraviolet photodetectors,” Nanoscale 4(20), 6318–6324 (2012).
[CrossRef] [PubMed]

W. Tian, C. Y. Zhi, T. Y. Zhai, S. M. Chen, X. Wang, M. Y. Liao, D. Golberg, Y. Bando, “In-doped Ga2O3 nanobelt based photodetector with high sensitivity and wide-range photoresponse,” J. Mater. Chem. 22(34), 17984–17991 (2012).
[CrossRef]

T. Y. Zhai, X. S. Fang, M. Y. Liao, X. J. Xu, L. Li, B. D. Liu, Y. Koide, Y. Ma, J. N. Yao, Y. Bando, D. Golberg, “Fabrication of high-quality In2Se3 nanowire arrays toward high-performance visible-light photodetectors,” ACS Nano 4(3), 1596–1602 (2010).
[CrossRef] [PubMed]

Y. B. Li, T. Tokizono, M. Y. Liao, M. Zhong, Y. Koide, I. Yamada, J. J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[CrossRef]

Linsebigler, A.

A. Linsebigler, G. Lu, J. T. Yates, “CO chemisorption on TiO2(110): Oxygen vacancy site influence on CO adsorption,” J. Chem. Phys. 103(21), 9438–9443 (1995).
[CrossRef]

Liu, B. D.

T. Y. Zhai, X. S. Fang, M. Y. Liao, X. J. Xu, L. Li, B. D. Liu, Y. Koide, Y. Ma, J. N. Yao, Y. Bando, D. Golberg, “Fabrication of high-quality In2Se3 nanowire arrays toward high-performance visible-light photodetectors,” ACS Nano 4(3), 1596–1602 (2010).
[CrossRef] [PubMed]

Liu, Y.

X. Xie, S.-Y. Kwok, Z. Lu, Y. Liu, Y. Cao, L. Luo, J. A. Zapien, I. Bello, C.-S. Lee, S.-T. Lee, W. Zhang, “Visible-NIR photodetectors based on CdTe nanoribbons,” Nanoscale 4(9), 2914–2919 (2012).
[CrossRef] [PubMed]

Lovejoy, T. C.

T. C. Lovejoy, R. Chen, X. Zheng, E. G. Villora, K. Shimamura, H. Yoshikawa, Y. Yamashita, S. Ueda, K. Kobayashi, S. T. Dunham, F. S. Ohuchi, M. A. Olmstead, “Band bending and surface defects in β-Ga2O3,” Appl. Phys. Lett. 100(18), 181602 (2012).
[CrossRef]

Lu, A. Y.

C. Y. Su, A. Y. Lu, Y. Xu, F. R. Chen, A. N. Khlobystov, L. J. Li, “High-quality thin graphene films from fast electrochemical exfoliation,” ACS Nano 5(3), 2332–2339 (2011).
[CrossRef] [PubMed]

Lu, G.

A. Linsebigler, G. Lu, J. T. Yates, “CO chemisorption on TiO2(110): Oxygen vacancy site influence on CO adsorption,” J. Chem. Phys. 103(21), 9438–9443 (1995).
[CrossRef]

Lu, Z.

X. Xie, S.-Y. Kwok, Z. Lu, Y. Liu, Y. Cao, L. Luo, J. A. Zapien, I. Bello, C.-S. Lee, S.-T. Lee, W. Zhang, “Visible-NIR photodetectors based on CdTe nanoribbons,” Nanoscale 4(9), 2914–2919 (2012).
[CrossRef] [PubMed]

Luo, L.

X. Xie, S.-Y. Kwok, Z. Lu, Y. Liu, Y. Cao, L. Luo, J. A. Zapien, I. Bello, C.-S. Lee, S.-T. Lee, W. Zhang, “Visible-NIR photodetectors based on CdTe nanoribbons,” Nanoscale 4(9), 2914–2919 (2012).
[CrossRef] [PubMed]

Ma, Y.

T. Y. Zhai, X. S. Fang, M. Y. Liao, X. J. Xu, L. Li, B. D. Liu, Y. Koide, Y. Ma, J. N. Yao, Y. Bando, D. Golberg, “Fabrication of high-quality In2Se3 nanowire arrays toward high-performance visible-light photodetectors,” ACS Nano 4(3), 1596–1602 (2010).
[CrossRef] [PubMed]

Madden, P. A.

B. J. Morgan, P. A. Madden, “Effects of lattice polarity on interfacial space charges and defect disorder in ionically conducting AgI heterostructures,” Phys. Rev. Lett. 107(20), 206102 (2011).
[CrossRef] [PubMed]

Maeda, T.

M. Yoshimoto, T. Maeda, T. Ohnishi, H. Koinuma, O. Ishiyama, M. Shinohara, M. Kubo, R. Miura, A. Miyamoto, “Atomic-scale formation of ultrasmooth surfaces on sapphire substrates for high-quality thin-film fabrication,” Appl. Phys. Lett. 67(18), 2615–2617 (1995).
[CrossRef]

Mao, S.

M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, P. Yang, “Room-temperature ultraviolet nanowire nanolasers,” Science 292(5523), 1897–1899 (2001).
[CrossRef] [PubMed]

Meng, G. W.

C. H. Liang, G. W. Meng, G. Z. Wang, Y. W. Wang, L. D. Zhang, S. Y. Zhang, “Catalytic synthesis and photoluminescence of β-Ga2O3 nanowires,” Appl. Phys. Lett. 78(21), 3202–3204 (2001).
[CrossRef]

Miura, R.

M. Yoshimoto, T. Maeda, T. Ohnishi, H. Koinuma, O. Ishiyama, M. Shinohara, M. Kubo, R. Miura, A. Miyamoto, “Atomic-scale formation of ultrasmooth surfaces on sapphire substrates for high-quality thin-film fabrication,” Appl. Phys. Lett. 67(18), 2615–2617 (1995).
[CrossRef]

Miyamoto, A.

M. Yoshimoto, T. Maeda, T. Ohnishi, H. Koinuma, O. Ishiyama, M. Shinohara, M. Kubo, R. Miura, A. Miyamoto, “Atomic-scale formation of ultrasmooth surfaces on sapphire substrates for high-quality thin-film fabrication,” Appl. Phys. Lett. 67(18), 2615–2617 (1995).
[CrossRef]

Morgan, B. J.

B. J. Morgan, P. A. Madden, “Effects of lattice polarity on interfacial space charges and defect disorder in ionically conducting AgI heterostructures,” Phys. Rev. Lett. 107(20), 206102 (2011).
[CrossRef] [PubMed]

Morrill, J. M.

M. Barhoum, J. M. Morrill, D. Riassetto, M. H. Bartl, “Rapid sol-gel fabrication of high-quality thin-film stacks on planar and curved substrates,” Chem. Mater. 23(23), 5177–5184 (2011).
[CrossRef]

Nanda, K. K.

S. C. Vanithakumari, K. K. Nanda, “A one-step method for the growth of Ga2O3-nanorod-based white-light-emitting phosphors,” Adv. Mater. 21(35), 3581–3584 (2009).
[CrossRef]

Nieminen, R. M.

A. S. Foster, F. L. Gejo, A. L. Shluger, R. M. Nieminen, “Vacancy and interstitial defects in hafnia,” Phys. Rev. B 65(17), 174117 (2002).
[CrossRef]

Nieminen, R. N.

A. S. Foster, V. B. Sulimov, F. L. Gejo, A. L. Shluger, R. N. Nieminen, “Structure and electrical levels of point defects in monoclinic zirconia,” Phys. Rev. B 64(22), 224108 (2001).
[CrossRef]

Nomura, K.

K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, H. Hosono, “Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor,” Science 300(5623), 1269–1272 (2003).
[CrossRef] [PubMed]

Ohnishi, T.

M. Yoshimoto, T. Maeda, T. Ohnishi, H. Koinuma, O. Ishiyama, M. Shinohara, M. Kubo, R. Miura, A. Miyamoto, “Atomic-scale formation of ultrasmooth surfaces on sapphire substrates for high-quality thin-film fabrication,” Appl. Phys. Lett. 67(18), 2615–2617 (1995).
[CrossRef]

Ohta, H.

K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, H. Hosono, “Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor,” Science 300(5623), 1269–1272 (2003).
[CrossRef] [PubMed]

Ohuchi, F. S.

T. C. Lovejoy, R. Chen, X. Zheng, E. G. Villora, K. Shimamura, H. Yoshikawa, Y. Yamashita, S. Ueda, K. Kobayashi, S. T. Dunham, F. S. Ohuchi, M. A. Olmstead, “Band bending and surface defects in β-Ga2O3,” Appl. Phys. Lett. 100(18), 181602 (2012).
[CrossRef]

Olmstead, M. A.

T. C. Lovejoy, R. Chen, X. Zheng, E. G. Villora, K. Shimamura, H. Yoshikawa, Y. Yamashita, S. Ueda, K. Kobayashi, S. T. Dunham, F. S. Ohuchi, M. A. Olmstead, “Band bending and surface defects in β-Ga2O3,” Appl. Phys. Lett. 100(18), 181602 (2012).
[CrossRef]

Ou, S. L.

P. Ravadgar, R. H. Horng, S. L. Ou, “A visualization of threading dislocations formation and dynamics in mosaic growth of GaN-based light emitting diode epitaxial layers on (0001) sapphire,” Appl. Phys. Lett. 101(23), 231911 (2012).
[CrossRef]

Ravadgar, P.

P. Ravadgar, R. H. Horng, S. L. Ou, “A visualization of threading dislocations formation and dynamics in mosaic growth of GaN-based light emitting diode epitaxial layers on (0001) sapphire,” Appl. Phys. Lett. 101(23), 231911 (2012).
[CrossRef]

P. Ravadgar, R. H. Horng, T. Y. Wang, “Healing of surface states and point defects in single-crystalline β-Ga2O3 epilayer,” ECS J. Solid State Sci. Technol. 1(4), N58–N60 (2012).
[CrossRef]

Riassetto, D.

M. Barhoum, J. M. Morrill, D. Riassetto, M. H. Bartl, “Rapid sol-gel fabrication of high-quality thin-film stacks on planar and curved substrates,” Chem. Mater. 23(23), 5177–5184 (2011).
[CrossRef]

Russo, R.

M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, P. Yang, “Room-temperature ultraviolet nanowire nanolasers,” Science 292(5523), 1897–1899 (2001).
[CrossRef] [PubMed]

Scott, J. F.

J. F. Scott, M. Dawber, “Oxygen-vacancy ordering as a fatigue mechanism in perovskite ferroelectrics,” Appl. Phys. Lett. 76(25), 3801–3803 (2000).
[CrossRef]

Shimamura, K.

T. C. Lovejoy, R. Chen, X. Zheng, E. G. Villora, K. Shimamura, H. Yoshikawa, Y. Yamashita, S. Ueda, K. Kobayashi, S. T. Dunham, F. S. Ohuchi, M. A. Olmstead, “Band bending and surface defects in β-Ga2O3,” Appl. Phys. Lett. 100(18), 181602 (2012).
[CrossRef]

Shinohara, M.

M. Yoshimoto, T. Maeda, T. Ohnishi, H. Koinuma, O. Ishiyama, M. Shinohara, M. Kubo, R. Miura, A. Miyamoto, “Atomic-scale formation of ultrasmooth surfaces on sapphire substrates for high-quality thin-film fabrication,” Appl. Phys. Lett. 67(18), 2615–2617 (1995).
[CrossRef]

Shluger, A. L.

A. S. Foster, F. L. Gejo, A. L. Shluger, R. M. Nieminen, “Vacancy and interstitial defects in hafnia,” Phys. Rev. B 65(17), 174117 (2002).
[CrossRef]

A. S. Foster, V. B. Sulimov, F. L. Gejo, A. L. Shluger, R. N. Nieminen, “Structure and electrical levels of point defects in monoclinic zirconia,” Phys. Rev. B 64(22), 224108 (2001).
[CrossRef]

Sreenivas, K.

H. K. Yadav, K. Sreenivas, V. Gupta, “Study of metal/ZnO based thin film ultraviolet photodetectors: The effect of induced charges on the dynamics of photoconductivity relaxation,” J. Appl. Phys. 107(4), 044507 (2010).
[CrossRef]

Su, C. J.

M. S. Su, C. Y. Kuo, M. C. Yuan, U. S. Jeng, C. J. Su, K. H. Wei, “Improving device efficiency of polymer/fullerene bulk heterojunction solar cells through enhanced crystallinity and reduced grain boundaries induced by solvent additives,” Adv. Mater. 23(29), 3315–3319 (2011).
[CrossRef] [PubMed]

Su, C. Y.

C. Y. Su, A. Y. Lu, Y. Xu, F. R. Chen, A. N. Khlobystov, L. J. Li, “High-quality thin graphene films from fast electrochemical exfoliation,” ACS Nano 5(3), 2332–2339 (2011).
[CrossRef] [PubMed]

Su, M. S.

M. S. Su, C. Y. Kuo, M. C. Yuan, U. S. Jeng, C. J. Su, K. H. Wei, “Improving device efficiency of polymer/fullerene bulk heterojunction solar cells through enhanced crystallinity and reduced grain boundaries induced by solvent additives,” Adv. Mater. 23(29), 3315–3319 (2011).
[CrossRef] [PubMed]

Sulimov, V. B.

A. S. Foster, V. B. Sulimov, F. L. Gejo, A. L. Shluger, R. N. Nieminen, “Structure and electrical levels of point defects in monoclinic zirconia,” Phys. Rev. B 64(22), 224108 (2001).
[CrossRef]

Tasker, P. W.

D. M. Duffy, J. P. Hoare, P. W. Tasker, “Vacancy formation energies near the surface of an ionic crystal,” J. Phys. C Solid State Phys. 17(7), L195–L199 (1984).
[CrossRef]

Tian, W.

W. Tian, C. Y. Zhi, T. Y. Zhai, S. M. Chen, X. Wang, M. Y. Liao, D. Golberg, Y. Bando, “In-doped Ga2O3 nanobelt based photodetector with high sensitivity and wide-range photoresponse,” J. Mater. Chem. 22(34), 17984–17991 (2012).
[CrossRef]

W. Tian, C. Y. Zhi, T. Y. Zhai, X. Wang, M. Y. Liao, S. L. Li, S. M. Chen, D. Golberg, Y. Bando, “Ultrahigh quantum efficiency of CuO nanoparticle decorated In2Ge2O7 nanobelt deep-ultraviolet photodetectors,” Nanoscale 4(20), 6318–6324 (2012).
[CrossRef] [PubMed]

Tokizono, T.

Y. B. Li, T. Tokizono, M. Y. Liao, M. Zhong, Y. Koide, I. Yamada, J. J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[CrossRef]

Torumba, D.

J. P. Crocombette, D. Torumba, A. Chartier, “Charge states of point defects in uranium oxide calculated with a local hybrid functional for correlated electrons,” Phys. Rev. B 83(18), 184107 (2011).
[CrossRef]

Ueda, K.

K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, H. Hosono, “Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor,” Science 300(5623), 1269–1272 (2003).
[CrossRef] [PubMed]

Ueda, S.

T. C. Lovejoy, R. Chen, X. Zheng, E. G. Villora, K. Shimamura, H. Yoshikawa, Y. Yamashita, S. Ueda, K. Kobayashi, S. T. Dunham, F. S. Ohuchi, M. A. Olmstead, “Band bending and surface defects in β-Ga2O3,” Appl. Phys. Lett. 100(18), 181602 (2012).
[CrossRef]

Van de Walle, C. G.

J. B. Varley, J. R. Weber, A. Janotti, C. G. Van de Walle, “Oxygen vacancies and donor impurities in β-Ga2O3,” Appl. Phys. Lett. 97(14), 142106 (2010).
[CrossRef]

Vanithakumari, S. C.

S. C. Vanithakumari, K. K. Nanda, “A one-step method for the growth of Ga2O3-nanorod-based white-light-emitting phosphors,” Adv. Mater. 21(35), 3581–3584 (2009).
[CrossRef]

Varley, J. B.

J. B. Varley, J. R. Weber, A. Janotti, C. G. Van de Walle, “Oxygen vacancies and donor impurities in β-Ga2O3,” Appl. Phys. Lett. 97(14), 142106 (2010).
[CrossRef]

Villora, E. G.

T. C. Lovejoy, R. Chen, X. Zheng, E. G. Villora, K. Shimamura, H. Yoshikawa, Y. Yamashita, S. Ueda, K. Kobayashi, S. T. Dunham, F. S. Ohuchi, M. A. Olmstead, “Band bending and surface defects in β-Ga2O3,” Appl. Phys. Lett. 100(18), 181602 (2012).
[CrossRef]

Wang, G. Z.

C. H. Liang, G. W. Meng, G. Z. Wang, Y. W. Wang, L. D. Zhang, S. Y. Zhang, “Catalytic synthesis and photoluminescence of β-Ga2O3 nanowires,” Appl. Phys. Lett. 78(21), 3202–3204 (2001).
[CrossRef]

Wang, K.

K. Wang, F. Chen, N. Allec, K. S. Karim, “Fast lateral amorphous-selenium metal–semiconductor–metal photodetector with high blue-to-ultraviolet responsivity,” IEEE Trans. Electron. Dev. 57(8), 1953–1958 (2010).
[CrossRef]

Wang, M. J.

Y. Hu, Y. Q. Chen, Y. C. Wu, M. J. Wang, G. J. Fang, C. Q. He, S. J. Wang, “Structural, defect and optical properties of ZnO films grown under various O2/Ar gas ratios,” Appl. Surf. Sci. 255(22), 9279–9284 (2009).
[CrossRef]

Wang, S. J.

Y. Hu, Y. Q. Chen, Y. C. Wu, M. J. Wang, G. J. Fang, C. Q. He, S. J. Wang, “Structural, defect and optical properties of ZnO films grown under various O2/Ar gas ratios,” Appl. Surf. Sci. 255(22), 9279–9284 (2009).
[CrossRef]

Wang, T. Y.

P. Ravadgar, R. H. Horng, T. Y. Wang, “Healing of surface states and point defects in single-crystalline β-Ga2O3 epilayer,” ECS J. Solid State Sci. Technol. 1(4), N58–N60 (2012).
[CrossRef]

Wang, X.

W. Tian, C. Y. Zhi, T. Y. Zhai, X. Wang, M. Y. Liao, S. L. Li, S. M. Chen, D. Golberg, Y. Bando, “Ultrahigh quantum efficiency of CuO nanoparticle decorated In2Ge2O7 nanobelt deep-ultraviolet photodetectors,” Nanoscale 4(20), 6318–6324 (2012).
[CrossRef] [PubMed]

W. Tian, C. Y. Zhi, T. Y. Zhai, S. M. Chen, X. Wang, M. Y. Liao, D. Golberg, Y. Bando, “In-doped Ga2O3 nanobelt based photodetector with high sensitivity and wide-range photoresponse,” J. Mater. Chem. 22(34), 17984–17991 (2012).
[CrossRef]

Wang, Y. W.

C. H. Liang, G. W. Meng, G. Z. Wang, Y. W. Wang, L. D. Zhang, S. Y. Zhang, “Catalytic synthesis and photoluminescence of β-Ga2O3 nanowires,” Appl. Phys. Lett. 78(21), 3202–3204 (2001).
[CrossRef]

Wang, Z. L.

Z. L. Wang, J. S. Yin, Y. D. Jiang, “EELS analysis of cation valence states and oxygen vacancies in magnetic oxides,” Micron 31(5), 571–580 (2000).
[CrossRef] [PubMed]

Weber, E.

M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, P. Yang, “Room-temperature ultraviolet nanowire nanolasers,” Science 292(5523), 1897–1899 (2001).
[CrossRef] [PubMed]

Weber, J. R.

J. B. Varley, J. R. Weber, A. Janotti, C. G. Van de Walle, “Oxygen vacancies and donor impurities in β-Ga2O3,” Appl. Phys. Lett. 97(14), 142106 (2010).
[CrossRef]

Wei, K. H.

M. S. Su, C. Y. Kuo, M. C. Yuan, U. S. Jeng, C. J. Su, K. H. Wei, “Improving device efficiency of polymer/fullerene bulk heterojunction solar cells through enhanced crystallinity and reduced grain boundaries induced by solvent additives,” Adv. Mater. 23(29), 3315–3319 (2011).
[CrossRef] [PubMed]

Weng, W. Y.

W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang, H. T. Hsueh, “A β-Ga2O3 solar-blind photodetector prepared by furnace oxidization of GaN thin film,” IEEE Sens. J. 11(4), 999–1003 (2011).
[CrossRef]

Wu, L.

L. Hu, L. Wu, M. Liao, X. Fang, “High-performance NiCo2O4 nanofilm photodetectors fabricated by an interfacial self-assembly strategy,” Adv. Mater. 23(17), 1988–1992 (2011).
[CrossRef] [PubMed]

M. Chen, C. Ye, S. Zhou, L. Wu, “Recent advances in applications and performance of inorganic hollow spheres in some devices,” Adv. Mater. (to be published).

Wu, Y.

M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, P. Yang, “Room-temperature ultraviolet nanowire nanolasers,” Science 292(5523), 1897–1899 (2001).
[CrossRef] [PubMed]

Wu, Y. C.

Y. Hu, Y. Q. Chen, Y. C. Wu, M. J. Wang, G. J. Fang, C. Q. He, S. J. Wang, “Structural, defect and optical properties of ZnO films grown under various O2/Ar gas ratios,” Appl. Surf. Sci. 255(22), 9279–9284 (2009).
[CrossRef]

Xie, X.

X. Xie, S.-Y. Kwok, Z. Lu, Y. Liu, Y. Cao, L. Luo, J. A. Zapien, I. Bello, C.-S. Lee, S.-T. Lee, W. Zhang, “Visible-NIR photodetectors based on CdTe nanoribbons,” Nanoscale 4(9), 2914–2919 (2012).
[CrossRef] [PubMed]

Xu, X. J.

T. Y. Zhai, X. S. Fang, M. Y. Liao, X. J. Xu, L. Li, B. D. Liu, Y. Koide, Y. Ma, J. N. Yao, Y. Bando, D. Golberg, “Fabrication of high-quality In2Se3 nanowire arrays toward high-performance visible-light photodetectors,” ACS Nano 4(3), 1596–1602 (2010).
[CrossRef] [PubMed]

Xu, Y.

C. Y. Su, A. Y. Lu, Y. Xu, F. R. Chen, A. N. Khlobystov, L. J. Li, “High-quality thin graphene films from fast electrochemical exfoliation,” ACS Nano 5(3), 2332–2339 (2011).
[CrossRef] [PubMed]

Yadav, H. K.

H. K. Yadav, K. Sreenivas, V. Gupta, “Study of metal/ZnO based thin film ultraviolet photodetectors: The effect of induced charges on the dynamics of photoconductivity relaxation,” J. Appl. Phys. 107(4), 044507 (2010).
[CrossRef]

Yamada, I.

Y. B. Li, T. Tokizono, M. Y. Liao, M. Zhong, Y. Koide, I. Yamada, J. J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[CrossRef]

Yamashita, Y.

T. C. Lovejoy, R. Chen, X. Zheng, E. G. Villora, K. Shimamura, H. Yoshikawa, Y. Yamashita, S. Ueda, K. Kobayashi, S. T. Dunham, F. S. Ohuchi, M. A. Olmstead, “Band bending and surface defects in β-Ga2O3,” Appl. Phys. Lett. 100(18), 181602 (2012).
[CrossRef]

Yan, H.

M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, P. Yang, “Room-temperature ultraviolet nanowire nanolasers,” Science 292(5523), 1897–1899 (2001).
[CrossRef] [PubMed]

Yang, P.

M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, P. Yang, “Room-temperature ultraviolet nanowire nanolasers,” Science 292(5523), 1897–1899 (2001).
[CrossRef] [PubMed]

Yao, J. N.

T. Y. Zhai, X. S. Fang, M. Y. Liao, X. J. Xu, L. Li, B. D. Liu, Y. Koide, Y. Ma, J. N. Yao, Y. Bando, D. Golberg, “Fabrication of high-quality In2Se3 nanowire arrays toward high-performance visible-light photodetectors,” ACS Nano 4(3), 1596–1602 (2010).
[CrossRef] [PubMed]

Yates, J. T.

A. Linsebigler, G. Lu, J. T. Yates, “CO chemisorption on TiO2(110): Oxygen vacancy site influence on CO adsorption,” J. Chem. Phys. 103(21), 9438–9443 (1995).
[CrossRef]

Ye, C.

M. Chen, C. Ye, S. Zhou, L. Wu, “Recent advances in applications and performance of inorganic hollow spheres in some devices,” Adv. Mater. (to be published).

Yin, J. S.

Z. L. Wang, J. S. Yin, Y. D. Jiang, “EELS analysis of cation valence states and oxygen vacancies in magnetic oxides,” Micron 31(5), 571–580 (2000).
[CrossRef] [PubMed]

Yoshikawa, H.

T. C. Lovejoy, R. Chen, X. Zheng, E. G. Villora, K. Shimamura, H. Yoshikawa, Y. Yamashita, S. Ueda, K. Kobayashi, S. T. Dunham, F. S. Ohuchi, M. A. Olmstead, “Band bending and surface defects in β-Ga2O3,” Appl. Phys. Lett. 100(18), 181602 (2012).
[CrossRef]

Yoshimoto, M.

M. Yoshimoto, T. Maeda, T. Ohnishi, H. Koinuma, O. Ishiyama, M. Shinohara, M. Kubo, R. Miura, A. Miyamoto, “Atomic-scale formation of ultrasmooth surfaces on sapphire substrates for high-quality thin-film fabrication,” Appl. Phys. Lett. 67(18), 2615–2617 (1995).
[CrossRef]

Yuan, M. C.

M. S. Su, C. Y. Kuo, M. C. Yuan, U. S. Jeng, C. J. Su, K. H. Wei, “Improving device efficiency of polymer/fullerene bulk heterojunction solar cells through enhanced crystallinity and reduced grain boundaries induced by solvent additives,” Adv. Mater. 23(29), 3315–3319 (2011).
[CrossRef] [PubMed]

Zapien, J. A.

X. Xie, S.-Y. Kwok, Z. Lu, Y. Liu, Y. Cao, L. Luo, J. A. Zapien, I. Bello, C.-S. Lee, S.-T. Lee, W. Zhang, “Visible-NIR photodetectors based on CdTe nanoribbons,” Nanoscale 4(9), 2914–2919 (2012).
[CrossRef] [PubMed]

Zhai, T. Y.

W. Tian, C. Y. Zhi, T. Y. Zhai, S. M. Chen, X. Wang, M. Y. Liao, D. Golberg, Y. Bando, “In-doped Ga2O3 nanobelt based photodetector with high sensitivity and wide-range photoresponse,” J. Mater. Chem. 22(34), 17984–17991 (2012).
[CrossRef]

W. Tian, C. Y. Zhi, T. Y. Zhai, X. Wang, M. Y. Liao, S. L. Li, S. M. Chen, D. Golberg, Y. Bando, “Ultrahigh quantum efficiency of CuO nanoparticle decorated In2Ge2O7 nanobelt deep-ultraviolet photodetectors,” Nanoscale 4(20), 6318–6324 (2012).
[CrossRef] [PubMed]

T. Y. Zhai, X. S. Fang, M. Y. Liao, X. J. Xu, L. Li, B. D. Liu, Y. Koide, Y. Ma, J. N. Yao, Y. Bando, D. Golberg, “Fabrication of high-quality In2Se3 nanowire arrays toward high-performance visible-light photodetectors,” ACS Nano 4(3), 1596–1602 (2010).
[CrossRef] [PubMed]

Zhang, L. D.

C. H. Liang, G. W. Meng, G. Z. Wang, Y. W. Wang, L. D. Zhang, S. Y. Zhang, “Catalytic synthesis and photoluminescence of β-Ga2O3 nanowires,” Appl. Phys. Lett. 78(21), 3202–3204 (2001).
[CrossRef]

Zhang, S. Y.

C. H. Liang, G. W. Meng, G. Z. Wang, Y. W. Wang, L. D. Zhang, S. Y. Zhang, “Catalytic synthesis and photoluminescence of β-Ga2O3 nanowires,” Appl. Phys. Lett. 78(21), 3202–3204 (2001).
[CrossRef]

Zhang, W.

X. Xie, S.-Y. Kwok, Z. Lu, Y. Liu, Y. Cao, L. Luo, J. A. Zapien, I. Bello, C.-S. Lee, S.-T. Lee, W. Zhang, “Visible-NIR photodetectors based on CdTe nanoribbons,” Nanoscale 4(9), 2914–2919 (2012).
[CrossRef] [PubMed]

Zheng, X.

T. C. Lovejoy, R. Chen, X. Zheng, E. G. Villora, K. Shimamura, H. Yoshikawa, Y. Yamashita, S. Ueda, K. Kobayashi, S. T. Dunham, F. S. Ohuchi, M. A. Olmstead, “Band bending and surface defects in β-Ga2O3,” Appl. Phys. Lett. 100(18), 181602 (2012).
[CrossRef]

Zhi, C. Y.

W. Tian, C. Y. Zhi, T. Y. Zhai, S. M. Chen, X. Wang, M. Y. Liao, D. Golberg, Y. Bando, “In-doped Ga2O3 nanobelt based photodetector with high sensitivity and wide-range photoresponse,” J. Mater. Chem. 22(34), 17984–17991 (2012).
[CrossRef]

W. Tian, C. Y. Zhi, T. Y. Zhai, X. Wang, M. Y. Liao, S. L. Li, S. M. Chen, D. Golberg, Y. Bando, “Ultrahigh quantum efficiency of CuO nanoparticle decorated In2Ge2O7 nanobelt deep-ultraviolet photodetectors,” Nanoscale 4(20), 6318–6324 (2012).
[CrossRef] [PubMed]

Zhong, M.

Y. B. Li, T. Tokizono, M. Y. Liao, M. Zhong, Y. Koide, I. Yamada, J. J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[CrossRef]

Zhou, S.

M. Chen, C. Ye, S. Zhou, L. Wu, “Recent advances in applications and performance of inorganic hollow spheres in some devices,” Adv. Mater. (to be published).

ACS Nano (2)

C. Y. Su, A. Y. Lu, Y. Xu, F. R. Chen, A. N. Khlobystov, L. J. Li, “High-quality thin graphene films from fast electrochemical exfoliation,” ACS Nano 5(3), 2332–2339 (2011).
[CrossRef] [PubMed]

T. Y. Zhai, X. S. Fang, M. Y. Liao, X. J. Xu, L. Li, B. D. Liu, Y. Koide, Y. Ma, J. N. Yao, Y. Bando, D. Golberg, “Fabrication of high-quality In2Se3 nanowire arrays toward high-performance visible-light photodetectors,” ACS Nano 4(3), 1596–1602 (2010).
[CrossRef] [PubMed]

Adv. Funct. Mater. (1)

Y. B. Li, T. Tokizono, M. Y. Liao, M. Zhong, Y. Koide, I. Yamada, J. J. Delaunay, “Efficient assembly of bridged β-Ga2O3 nanowires for solar-blind photodetection,” Adv. Funct. Mater. 20(22), 3972–3978 (2010).
[CrossRef]

Adv. Mater. (4)

S. C. Vanithakumari, K. K. Nanda, “A one-step method for the growth of Ga2O3-nanorod-based white-light-emitting phosphors,” Adv. Mater. 21(35), 3581–3584 (2009).
[CrossRef]

M. S. Su, C. Y. Kuo, M. C. Yuan, U. S. Jeng, C. J. Su, K. H. Wei, “Improving device efficiency of polymer/fullerene bulk heterojunction solar cells through enhanced crystallinity and reduced grain boundaries induced by solvent additives,” Adv. Mater. 23(29), 3315–3319 (2011).
[CrossRef] [PubMed]

M. Chen, C. Ye, S. Zhou, L. Wu, “Recent advances in applications and performance of inorganic hollow spheres in some devices,” Adv. Mater. (to be published).

L. Hu, L. Wu, M. Liao, X. Fang, “High-performance NiCo2O4 nanofilm photodetectors fabricated by an interfacial self-assembly strategy,” Adv. Mater. 23(17), 1988–1992 (2011).
[CrossRef] [PubMed]

Appl. Phys. Lett. (6)

P. Ravadgar, R. H. Horng, S. L. Ou, “A visualization of threading dislocations formation and dynamics in mosaic growth of GaN-based light emitting diode epitaxial layers on (0001) sapphire,” Appl. Phys. Lett. 101(23), 231911 (2012).
[CrossRef]

M. Yoshimoto, T. Maeda, T. Ohnishi, H. Koinuma, O. Ishiyama, M. Shinohara, M. Kubo, R. Miura, A. Miyamoto, “Atomic-scale formation of ultrasmooth surfaces on sapphire substrates for high-quality thin-film fabrication,” Appl. Phys. Lett. 67(18), 2615–2617 (1995).
[CrossRef]

T. C. Lovejoy, R. Chen, X. Zheng, E. G. Villora, K. Shimamura, H. Yoshikawa, Y. Yamashita, S. Ueda, K. Kobayashi, S. T. Dunham, F. S. Ohuchi, M. A. Olmstead, “Band bending and surface defects in β-Ga2O3,” Appl. Phys. Lett. 100(18), 181602 (2012).
[CrossRef]

C. H. Liang, G. W. Meng, G. Z. Wang, Y. W. Wang, L. D. Zhang, S. Y. Zhang, “Catalytic synthesis and photoluminescence of β-Ga2O3 nanowires,” Appl. Phys. Lett. 78(21), 3202–3204 (2001).
[CrossRef]

J. F. Scott, M. Dawber, “Oxygen-vacancy ordering as a fatigue mechanism in perovskite ferroelectrics,” Appl. Phys. Lett. 76(25), 3801–3803 (2000).
[CrossRef]

J. B. Varley, J. R. Weber, A. Janotti, C. G. Van de Walle, “Oxygen vacancies and donor impurities in β-Ga2O3,” Appl. Phys. Lett. 97(14), 142106 (2010).
[CrossRef]

Appl. Surf. Sci. (1)

Y. Hu, Y. Q. Chen, Y. C. Wu, M. J. Wang, G. J. Fang, C. Q. He, S. J. Wang, “Structural, defect and optical properties of ZnO films grown under various O2/Ar gas ratios,” Appl. Surf. Sci. 255(22), 9279–9284 (2009).
[CrossRef]

Chem. Mater. (1)

M. Barhoum, J. M. Morrill, D. Riassetto, M. H. Bartl, “Rapid sol-gel fabrication of high-quality thin-film stacks on planar and curved substrates,” Chem. Mater. 23(23), 5177–5184 (2011).
[CrossRef]

ECS J. Solid State Sci. Technol. (1)

P. Ravadgar, R. H. Horng, T. Y. Wang, “Healing of surface states and point defects in single-crystalline β-Ga2O3 epilayer,” ECS J. Solid State Sci. Technol. 1(4), N58–N60 (2012).
[CrossRef]

IEEE Sens. J. (1)

W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang, H. T. Hsueh, “A β-Ga2O3 solar-blind photodetector prepared by furnace oxidization of GaN thin film,” IEEE Sens. J. 11(4), 999–1003 (2011).
[CrossRef]

IEEE Trans. Electron. Dev. (1)

K. Wang, F. Chen, N. Allec, K. S. Karim, “Fast lateral amorphous-selenium metal–semiconductor–metal photodetector with high blue-to-ultraviolet responsivity,” IEEE Trans. Electron. Dev. 57(8), 1953–1958 (2010).
[CrossRef]

J. Appl. Phys. (1)

H. K. Yadav, K. Sreenivas, V. Gupta, “Study of metal/ZnO based thin film ultraviolet photodetectors: The effect of induced charges on the dynamics of photoconductivity relaxation,” J. Appl. Phys. 107(4), 044507 (2010).
[CrossRef]

J. Chem. Phys. (1)

A. Linsebigler, G. Lu, J. T. Yates, “CO chemisorption on TiO2(110): Oxygen vacancy site influence on CO adsorption,” J. Chem. Phys. 103(21), 9438–9443 (1995).
[CrossRef]

J. Disp. Technol. (1)

M. M. Cao, R. J. Chacon, C. E. Hunt, “A field emission light source using a reticulated vitreous carbon (RVC) cathode and cathodoluminescent phosphors,” J. Disp. Technol. 7(9), 467–472 (2011).
[CrossRef]

J. Mater. Chem. (1)

W. Tian, C. Y. Zhi, T. Y. Zhai, S. M. Chen, X. Wang, M. Y. Liao, D. Golberg, Y. Bando, “In-doped Ga2O3 nanobelt based photodetector with high sensitivity and wide-range photoresponse,” J. Mater. Chem. 22(34), 17984–17991 (2012).
[CrossRef]

J. Phys. C Solid State Phys. (1)

D. M. Duffy, J. P. Hoare, P. W. Tasker, “Vacancy formation energies near the surface of an ionic crystal,” J. Phys. C Solid State Phys. 17(7), L195–L199 (1984).
[CrossRef]

J. Phys. D Appl. Phys. (1)

J. Hao, M. Cocivera, “Optical and luminescent properties of undoped and rare-earth-doped Ga2O3 thin films deposited by spray pyrolysis,” J. Phys. D Appl. Phys. 35(5), 433–438 (2002).
[CrossRef]

Micron (1)

Z. L. Wang, J. S. Yin, Y. D. Jiang, “EELS analysis of cation valence states and oxygen vacancies in magnetic oxides,” Micron 31(5), 571–580 (2000).
[CrossRef] [PubMed]

Nanoscale (2)

W. Tian, C. Y. Zhi, T. Y. Zhai, X. Wang, M. Y. Liao, S. L. Li, S. M. Chen, D. Golberg, Y. Bando, “Ultrahigh quantum efficiency of CuO nanoparticle decorated In2Ge2O7 nanobelt deep-ultraviolet photodetectors,” Nanoscale 4(20), 6318–6324 (2012).
[CrossRef] [PubMed]

X. Xie, S.-Y. Kwok, Z. Lu, Y. Liu, Y. Cao, L. Luo, J. A. Zapien, I. Bello, C.-S. Lee, S.-T. Lee, W. Zhang, “Visible-NIR photodetectors based on CdTe nanoribbons,” Nanoscale 4(9), 2914–2919 (2012).
[CrossRef] [PubMed]

Phys. Rev. B (5)

P. Erhart, A. Klein, K. Albe, “First-principles study of the structure and stability of oxygen defects in zinc oxide,” Phys. Rev. B 72(8), 085213 (2005).
[CrossRef]

J. P. Crocombette, D. Torumba, A. Chartier, “Charge states of point defects in uranium oxide calculated with a local hybrid functional for correlated electrons,” Phys. Rev. B 83(18), 184107 (2011).
[CrossRef]

F. Devynck, M. Iannuzzi, M. Krack, “Frenkel pair recombinations in UO2: Importance of explicit description of polarizability in core-shell molecular dynamics simulations,” Phys. Rev. B 85(18), 184103 (2012).
[CrossRef]

A. S. Foster, V. B. Sulimov, F. L. Gejo, A. L. Shluger, R. N. Nieminen, “Structure and electrical levels of point defects in monoclinic zirconia,” Phys. Rev. B 64(22), 224108 (2001).
[CrossRef]

A. S. Foster, F. L. Gejo, A. L. Shluger, R. M. Nieminen, “Vacancy and interstitial defects in hafnia,” Phys. Rev. B 65(17), 174117 (2002).
[CrossRef]

Phys. Rev. Lett. (1)

B. J. Morgan, P. A. Madden, “Effects of lattice polarity on interfacial space charges and defect disorder in ionically conducting AgI heterostructures,” Phys. Rev. Lett. 107(20), 206102 (2011).
[CrossRef] [PubMed]

Science (2)

K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, H. Hosono, “Thin-film transistor fabricated in single-crystalline transparent oxide semiconductor,” Science 300(5623), 1269–1272 (2003).
[CrossRef] [PubMed]

M. H. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, P. Yang, “Room-temperature ultraviolet nanowire nanolasers,” Science 292(5523), 1897–1899 (2001).
[CrossRef] [PubMed]

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (8)

Fig. 1
Fig. 1

Schematic diagram of a PD based on a β-Ga2O3 epilayer.

Fig. 2
Fig. 2

Structural characterization of β-Ga2O3 epilayers on sapphire (Al2O3) substrates. (a) Synchrotron HR-XRD patterns for typical as-grown and 700 °C, 800 °C, and 900 °C-annealed samples. (b) Synchrotron x-ray rocking curve patterns for (−402) diffraction peaks of samples.

Fig. 3
Fig. 3

Top-view FE-SEM images of (a) as-grown, (b) 700 °C, (c) 800 °C, and (d) 900 °C-annealed β-Ga2O3 epilayers.

Fig. 4
Fig. 4

Cross-sectional FE-SEM images of (a) as-grown, (b) 700 °C, (c) 800 °C, and (d) 900 °C-annealed β-Ga2O3 epilayers.

Fig. 5
Fig. 5

HR-TEM images of typical (a) as-grown and (b) 800 °C and (c) 900 °C-annealed β-Ga2O3 epilayers. (d) A magnified typical region of an HR-TEM image of the as-grown sample. (e) A schematic diagram to explain the orientationally-ordered self-interstitials in the as-grown sample.

Fig. 6
Fig. 6

Time-dependent photoresponsivity of typical PDs based on (a) as-grown, (b) 700 °C, (c) 800 °C, and (d) 900 °C-annealed β-Ga2O3.

Fig. 7
Fig. 7

Schematic diagrams of photo-generated electron-hole pairs in the (a) absence and (b) presence of applied voltage. Schematic diagrams of photo-generated electron-hole pairs under an applied voltage in the presence of (c) cation-anion pair defects and (d) cation-anion pair defects along with net cation defects.

Fig. 8
Fig. 8

Room temperature cathodoluminescence (CL) spectra of as-grown and post-annealed β-Ga2O3 at 700 °C, 800 °C, and 900 °C (a) after normalization for peak position comparison and (b) before normalization for peak intensity comparison.

Tables (1)

Tables Icon

Table 1 Comparison of Atomic Composition of As-grown and Post-annealed β-GaxO1-x Epilayers Studied by an RBS Technique

Metrics