Abstract

We demonstrate stable and tunable light emission in ultraviolet to near infrared regime by using annealed SiOx sample. By adjusting the ratio of Si and O of SiOx, different wavelengths such as ultraviolet, visible and near infrared photoluminescence can be tuned. From the results of transmission electron microscope, various sizes (1~4 nm) of the embedded Si nanoparticles were formed. Nanoparticles with smaller sizes were indeed formed for UV-blue emitting samples and the origin of light emission may be misattributed to the quantum confinement effects. However, we found the efficient and stable light emission in UV-blue regime, with lifetime on the order of nanoseconds, is dominantly from the defects.

© 2013 Optical Society of America

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2013 (1)

2012 (1)

2010 (5)

2009 (4)

L. Khriachtchev, T. Nikitin, R. Velagapudi, J. Lahtinen, and S. Novikov, “Light-emission mechanism of thermally annealed silicon-rich silicon oxide revisited: What is the role of silicon nanocrystals?” Appl. Phys. Lett. 94(4), 043115 (2009).
[CrossRef]

V. Svrcek, D. Mariotti, and M. Kondo, “Ambient-stable blue luminescent silicon nanocrystals prepared by nanosecond-pulsed laser ablation in water,” Opt. Express 17(2), 520–527 (2009).
[CrossRef] [PubMed]

A. Sa'ar, “Photoluminescence from silicon nanostructures: The mutual role of quantum confinement and surface chemistry,” J. Nanophotonics 3(1), 032501 (2009).
[CrossRef]

X. J. Hao, A. P. Podhorodecki, Y. S. Shen, G. Zatryb, J. Misiewicz, and M. A. Green, “Effects of Si-rich oxide layer stoichiometry on the structural and optical properties of Si QD/SiO2 multilayer films,” Nanotechnology 20(48), 485703 (2009).
[CrossRef] [PubMed]

2008 (2)

S. Schamm, C. Bonafos, H. Coffin, N. Cherkashin, M. Carrada, G. Ben Assayag, A. Claverie, M. Tencé, and C. Colliex, “Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS,” Ultramicroscopy 108(4), 346–357 (2008).
[CrossRef] [PubMed]

S. Godefroo, M. Hayne, M. Jivanescu, A. Stesmans, M. Zacharias, O. I. Lebedev, G. Van Tendeloo, and V. V. Moshchalkov, “Classification and control of the origin of photoluminescence from Si nanocrystals,” Nat. Nanotechnol. 3(3), 174–178 (2008).
[CrossRef] [PubMed]

2007 (2)

M. S. Carroll, L. Brewer, J. C. Verley, J. Banks, J. J. Sheng, W. Pan, and R. Dunn, “Silicon nanocrystal growth in the long diffusion length regime using high density plasma chemical vapour deposited silicon rich oxides,” Nanotechnology 18(31), 315707 (2007).
[CrossRef]

X. M. Wen, L. Van Dao, P. Hannaford, E. C. Cho, Y. H. Cho, and M. A. Green, “Excitation dependence of photoluminescence in silicon quantum dots,” New J. Phys. 9(9), 337 (2007).
[CrossRef]

2005 (1)

X. Yang, X. L. Wu, S. H. Li, H. Li, T. Qiu, Y. M. Yang, P. K. Chu, and G. G. Siu, “Origin of the 370-nm luminescence in Si oxide nanostructures,” Appl. Phys. Lett. 86(20), 201906 (2005).
[CrossRef]

2004 (1)

F. Iacona, C. Bongiorno, C. Spinella, S. Boninelli, and F. Priolo, “Formation and evolution of luminescent Si nanoclusters produced by thermal annealing of SiOx films,” J. Appl. Phys. 95(7), 3723–3732 (2004).
[CrossRef]

2002 (2)

B. Averboukh, R. Huber, K. W. Cheah, Y. R. Shen, G. G. Qin, Z. C. Ma, and W. H. Zong, “Luminescence studies of a Si/SiO2 superlattice,” J. Appl. Phys. 92(7), 3564–3568 (2002).
[CrossRef]

M. Zacharias, J. Heitmann, R. Scholz, U. Kahler, M. Schmidt, and J. Blasing, “Size-controlled highly luminescent silicon nanocrystals: a SiO/SiO2 superlattice approach,” Appl. Phys. Lett. 80(4), 661–663 (2002).
[CrossRef]

1999 (1)

M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, “Electronic states and luminescence in porous silicon quantum dots: The role of oxygen,” Phys. Rev. Lett. 82(1), 197–200 (1999).
[CrossRef]

1997 (2)

A. G. Cullis, L. T. Canham, and P. D. J. Calcott, “The structural and luminescence properties of porous silicon,” J. Appl. Phys. 82(3), 909–965 (1997).
[CrossRef]

S. Tong, X. N. Liu, T. Gao, and X. M. Bao, “Intense violet-blue photoluminescence in as-deposited amorphous Si:H:O films,” Appl. Phys. Lett. 71(5), 698–700 (1997).
[CrossRef]

1996 (3)

H. Mizuno, H. Koyama, and N. Koshida, “Oxide-free blue photoluminescence from photochemically etched porous silicon,” Appl. Phys. Lett. 69(25), 3779–3781 (1996).
[CrossRef]

D. J. Lockwood, Z. H. Lu, and J. M. Baribeau, “Quantum confined luminescence in Si/SiO2 superlattices,” Phys. Rev. Lett. 76(3), 539–541 (1996).
[CrossRef] [PubMed]

G. G. Qin, J. Lin, J. Q. Duan, and G. Q. Yao, “Comparative study of ultraviolet emission with peak wavelengths around 350 nm from oxidized porous silicon and that from SiO2 powder,” Appl. Phys. Lett. 69(12), 1689–1691 (1996).
[CrossRef]

1994 (2)

D. I. Kovalev, I. D. Yaroshetzkii, T. Muschik, V. Petrovakoch, and F. Koch, “Fast and slow visible luminescence bands of oxidized porous Si,” Appl. Phys. Lett. 64(2), 214–216 (1994).
[CrossRef]

A. J. Kontkiewicz, A. M. Kontkiewicz, J. Siejka, S. Sen, G. Nowak, A. M. Hoff, P. Sakthivel, K. Ahmed, P. Mukherjee, S. Witanachchi, and J. Lagowski, “Evidence that blue luminescence of oxidized porous silicon originates from SiO2,” Appl. Phys. Lett. 65(11), 1436–1438 (1994).
[CrossRef]

1993 (3)

C. Delerue, G. Allan, and M. Lannoo, “Theoretical aspects of the luminescence of porous silicon,” Phys. Rev. B Condens. Matter 48(15), 11024–11036 (1993).
[CrossRef] [PubMed]

Y. Kanemitsu, T. Ogawa, K. Shiraishi, and K. Takeda, “Visible photoluminescence from oxidized Si nanometer-sized spheres: exciton confinement on a spherical shell,” Phys. Rev. B Condens. Matter 48(7), 4883–4886 (1993).
[CrossRef] [PubMed]

T. Matsumoto, T. Futagi, H. Mimura, and Y. Kanemitsu, “Ultrafast decay dynamics of luminescence in porous silicon,” Phys. Rev. B Condens. Matter 47(20), 13876–13879 (1993).
[CrossRef] [PubMed]

1992 (1)

J. C. Vial, A. Bsiesy, F. Gaspard, R. Herino, M. Ligeon, F. Muller, R. Romestain, and R. M. Macfarlane, “Mechanisms of visible-light emission from electrooxidized porous silicon,” Phys. Rev. B 45(24), 14171–14176 (1992).
[CrossRef]

1990 (1)

L. T. Canham, “Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers,” Appl. Phys. Lett. 57(10), 1046–1048 (1990).
[CrossRef]

Ahmed, K.

A. J. Kontkiewicz, A. M. Kontkiewicz, J. Siejka, S. Sen, G. Nowak, A. M. Hoff, P. Sakthivel, K. Ahmed, P. Mukherjee, S. Witanachchi, and J. Lagowski, “Evidence that blue luminescence of oxidized porous silicon originates from SiO2,” Appl. Phys. Lett. 65(11), 1436–1438 (1994).
[CrossRef]

Allan, G.

M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, “Electronic states and luminescence in porous silicon quantum dots: The role of oxygen,” Phys. Rev. Lett. 82(1), 197–200 (1999).
[CrossRef]

C. Delerue, G. Allan, and M. Lannoo, “Theoretical aspects of the luminescence of porous silicon,” Phys. Rev. B Condens. Matter 48(15), 11024–11036 (1993).
[CrossRef] [PubMed]

Averboukh, B.

B. Averboukh, R. Huber, K. W. Cheah, Y. R. Shen, G. G. Qin, Z. C. Ma, and W. H. Zong, “Luminescence studies of a Si/SiO2 superlattice,” J. Appl. Phys. 92(7), 3564–3568 (2002).
[CrossRef]

Banks, J.

M. S. Carroll, L. Brewer, J. C. Verley, J. Banks, J. J. Sheng, W. Pan, and R. Dunn, “Silicon nanocrystal growth in the long diffusion length regime using high density plasma chemical vapour deposited silicon rich oxides,” Nanotechnology 18(31), 315707 (2007).
[CrossRef]

Bao, X. M.

S. Tong, X. N. Liu, T. Gao, and X. M. Bao, “Intense violet-blue photoluminescence in as-deposited amorphous Si:H:O films,” Appl. Phys. Lett. 71(5), 698–700 (1997).
[CrossRef]

Baribeau, J. M.

D. J. Lockwood, Z. H. Lu, and J. M. Baribeau, “Quantum confined luminescence in Si/SiO2 superlattices,” Phys. Rev. Lett. 76(3), 539–541 (1996).
[CrossRef] [PubMed]

Ben Assayag, G.

S. Schamm, C. Bonafos, H. Coffin, N. Cherkashin, M. Carrada, G. Ben Assayag, A. Claverie, M. Tencé, and C. Colliex, “Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS,” Ultramicroscopy 108(4), 346–357 (2008).
[CrossRef] [PubMed]

Blasing, J.

M. Zacharias, J. Heitmann, R. Scholz, U. Kahler, M. Schmidt, and J. Blasing, “Size-controlled highly luminescent silicon nanocrystals: a SiO/SiO2 superlattice approach,” Appl. Phys. Lett. 80(4), 661–663 (2002).
[CrossRef]

Bonafos, C.

S. Schamm, C. Bonafos, H. Coffin, N. Cherkashin, M. Carrada, G. Ben Assayag, A. Claverie, M. Tencé, and C. Colliex, “Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS,” Ultramicroscopy 108(4), 346–357 (2008).
[CrossRef] [PubMed]

Bongiorno, C.

F. Iacona, C. Bongiorno, C. Spinella, S. Boninelli, and F. Priolo, “Formation and evolution of luminescent Si nanoclusters produced by thermal annealing of SiOx films,” J. Appl. Phys. 95(7), 3723–3732 (2004).
[CrossRef]

Boninelli, S.

F. Iacona, C. Bongiorno, C. Spinella, S. Boninelli, and F. Priolo, “Formation and evolution of luminescent Si nanoclusters produced by thermal annealing of SiOx films,” J. Appl. Phys. 95(7), 3723–3732 (2004).
[CrossRef]

Brewer, L.

M. S. Carroll, L. Brewer, J. C. Verley, J. Banks, J. J. Sheng, W. Pan, and R. Dunn, “Silicon nanocrystal growth in the long diffusion length regime using high density plasma chemical vapour deposited silicon rich oxides,” Nanotechnology 18(31), 315707 (2007).
[CrossRef]

Bsiesy, A.

J. C. Vial, A. Bsiesy, F. Gaspard, R. Herino, M. Ligeon, F. Muller, R. Romestain, and R. M. Macfarlane, “Mechanisms of visible-light emission from electrooxidized porous silicon,” Phys. Rev. B 45(24), 14171–14176 (1992).
[CrossRef]

Calcott, P. D. J.

A. G. Cullis, L. T. Canham, and P. D. J. Calcott, “The structural and luminescence properties of porous silicon,” J. Appl. Phys. 82(3), 909–965 (1997).
[CrossRef]

Canham, L. T.

A. G. Cullis, L. T. Canham, and P. D. J. Calcott, “The structural and luminescence properties of porous silicon,” J. Appl. Phys. 82(3), 909–965 (1997).
[CrossRef]

L. T. Canham, “Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers,” Appl. Phys. Lett. 57(10), 1046–1048 (1990).
[CrossRef]

Carrada, M.

S. Schamm, C. Bonafos, H. Coffin, N. Cherkashin, M. Carrada, G. Ben Assayag, A. Claverie, M. Tencé, and C. Colliex, “Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS,” Ultramicroscopy 108(4), 346–357 (2008).
[CrossRef] [PubMed]

Carroll, M. S.

M. S. Carroll, L. Brewer, J. C. Verley, J. Banks, J. J. Sheng, W. Pan, and R. Dunn, “Silicon nanocrystal growth in the long diffusion length regime using high density plasma chemical vapour deposited silicon rich oxides,” Nanotechnology 18(31), 315707 (2007).
[CrossRef]

Chang, C. H.

C. H. Chang, Y. H. Pai, J. H. He, and G. R. Lin, “Wavelength-tunable blue photoluminescence of < 2 nm Si nanocrystal synthesized by ultra-low-flow-density PECVD,” Acta Mater. 58(4), 1270–1275 (2010).
[CrossRef]

Cheah, K. W.

B. Averboukh, R. Huber, K. W. Cheah, Y. R. Shen, G. G. Qin, Z. C. Ma, and W. H. Zong, “Luminescence studies of a Si/SiO2 superlattice,” J. Appl. Phys. 92(7), 3564–3568 (2002).
[CrossRef]

Cheng, C. H.

Cherkashin, N.

S. Schamm, C. Bonafos, H. Coffin, N. Cherkashin, M. Carrada, G. Ben Assayag, A. Claverie, M. Tencé, and C. Colliex, “Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS,” Ultramicroscopy 108(4), 346–357 (2008).
[CrossRef] [PubMed]

Cho, E. C.

X. M. Wen, L. Van Dao, P. Hannaford, E. C. Cho, Y. H. Cho, and M. A. Green, “Excitation dependence of photoluminescence in silicon quantum dots,” New J. Phys. 9(9), 337 (2007).
[CrossRef]

Cho, Y. H.

X. M. Wen, L. Van Dao, P. Hannaford, E. C. Cho, Y. H. Cho, and M. A. Green, “Excitation dependence of photoluminescence in silicon quantum dots,” New J. Phys. 9(9), 337 (2007).
[CrossRef]

Chu, P. K.

X. Yang, X. L. Wu, S. H. Li, H. Li, T. Qiu, Y. M. Yang, P. K. Chu, and G. G. Siu, “Origin of the 370-nm luminescence in Si oxide nanostructures,” Appl. Phys. Lett. 86(20), 201906 (2005).
[CrossRef]

Chuang, W. L.

Claverie, A.

S. Schamm, C. Bonafos, H. Coffin, N. Cherkashin, M. Carrada, G. Ben Assayag, A. Claverie, M. Tencé, and C. Colliex, “Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS,” Ultramicroscopy 108(4), 346–357 (2008).
[CrossRef] [PubMed]

Coffin, H.

S. Schamm, C. Bonafos, H. Coffin, N. Cherkashin, M. Carrada, G. Ben Assayag, A. Claverie, M. Tencé, and C. Colliex, “Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS,” Ultramicroscopy 108(4), 346–357 (2008).
[CrossRef] [PubMed]

Colliex, C.

S. Schamm, C. Bonafos, H. Coffin, N. Cherkashin, M. Carrada, G. Ben Assayag, A. Claverie, M. Tencé, and C. Colliex, “Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS,” Ultramicroscopy 108(4), 346–357 (2008).
[CrossRef] [PubMed]

Cullis, A. G.

A. G. Cullis, L. T. Canham, and P. D. J. Calcott, “The structural and luminescence properties of porous silicon,” J. Appl. Phys. 82(3), 909–965 (1997).
[CrossRef]

Delerue, C.

M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, “Electronic states and luminescence in porous silicon quantum dots: The role of oxygen,” Phys. Rev. Lett. 82(1), 197–200 (1999).
[CrossRef]

C. Delerue, G. Allan, and M. Lannoo, “Theoretical aspects of the luminescence of porous silicon,” Phys. Rev. B Condens. Matter 48(15), 11024–11036 (1993).
[CrossRef] [PubMed]

Dohnalová, K.

Duan, J. Q.

G. G. Qin, J. Lin, J. Q. Duan, and G. Q. Yao, “Comparative study of ultraviolet emission with peak wavelengths around 350 nm from oxidized porous silicon and that from SiO2 powder,” Appl. Phys. Lett. 69(12), 1689–1691 (1996).
[CrossRef]

Dunn, R.

M. S. Carroll, L. Brewer, J. C. Verley, J. Banks, J. J. Sheng, W. Pan, and R. Dunn, “Silicon nanocrystal growth in the long diffusion length regime using high density plasma chemical vapour deposited silicon rich oxides,” Nanotechnology 18(31), 315707 (2007).
[CrossRef]

Fauchet, P. M.

M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, “Electronic states and luminescence in porous silicon quantum dots: The role of oxygen,” Phys. Rev. Lett. 82(1), 197–200 (1999).
[CrossRef]

Futagi, T.

T. Matsumoto, T. Futagi, H. Mimura, and Y. Kanemitsu, “Ultrafast decay dynamics of luminescence in porous silicon,” Phys. Rev. B Condens. Matter 47(20), 13876–13879 (1993).
[CrossRef] [PubMed]

Gao, T.

S. Tong, X. N. Liu, T. Gao, and X. M. Bao, “Intense violet-blue photoluminescence in as-deposited amorphous Si:H:O films,” Appl. Phys. Lett. 71(5), 698–700 (1997).
[CrossRef]

Gaspard, F.

J. C. Vial, A. Bsiesy, F. Gaspard, R. Herino, M. Ligeon, F. Muller, R. Romestain, and R. M. Macfarlane, “Mechanisms of visible-light emission from electrooxidized porous silicon,” Phys. Rev. B 45(24), 14171–14176 (1992).
[CrossRef]

Godefroo, S.

S. Godefroo, M. Hayne, M. Jivanescu, A. Stesmans, M. Zacharias, O. I. Lebedev, G. Van Tendeloo, and V. V. Moshchalkov, “Classification and control of the origin of photoluminescence from Si nanocrystals,” Nat. Nanotechnol. 3(3), 174–178 (2008).
[CrossRef] [PubMed]

Green, M. A.

X. J. Hao, A. P. Podhorodecki, Y. S. Shen, G. Zatryb, J. Misiewicz, and M. A. Green, “Effects of Si-rich oxide layer stoichiometry on the structural and optical properties of Si QD/SiO2 multilayer films,” Nanotechnology 20(48), 485703 (2009).
[CrossRef] [PubMed]

X. M. Wen, L. Van Dao, P. Hannaford, E. C. Cho, Y. H. Cho, and M. A. Green, “Excitation dependence of photoluminescence in silicon quantum dots,” New J. Phys. 9(9), 337 (2007).
[CrossRef]

Guerra, R.

R. Guerra and S. Ossicini, “High luminescence in small Si/SiO2 nanocrystals: A theoretical study,” Phys. Rev. B 81(24), 245307 (2010).
[CrossRef]

Hannaford, P.

X. M. Wen, L. Van Dao, P. Hannaford, E. C. Cho, Y. H. Cho, and M. A. Green, “Excitation dependence of photoluminescence in silicon quantum dots,” New J. Phys. 9(9), 337 (2007).
[CrossRef]

Hao, X. J.

X. J. Hao, A. P. Podhorodecki, Y. S. Shen, G. Zatryb, J. Misiewicz, and M. A. Green, “Effects of Si-rich oxide layer stoichiometry on the structural and optical properties of Si QD/SiO2 multilayer films,” Nanotechnology 20(48), 485703 (2009).
[CrossRef] [PubMed]

Hayne, M.

S. Godefroo, M. Hayne, M. Jivanescu, A. Stesmans, M. Zacharias, O. I. Lebedev, G. Van Tendeloo, and V. V. Moshchalkov, “Classification and control of the origin of photoluminescence from Si nanocrystals,” Nat. Nanotechnol. 3(3), 174–178 (2008).
[CrossRef] [PubMed]

He, J. H.

C. H. Chang, Y. H. Pai, J. H. He, and G. R. Lin, “Wavelength-tunable blue photoluminescence of < 2 nm Si nanocrystal synthesized by ultra-low-flow-density PECVD,” Acta Mater. 58(4), 1270–1275 (2010).
[CrossRef]

Heitmann, J.

M. Zacharias, J. Heitmann, R. Scholz, U. Kahler, M. Schmidt, and J. Blasing, “Size-controlled highly luminescent silicon nanocrystals: a SiO/SiO2 superlattice approach,” Appl. Phys. Lett. 80(4), 661–663 (2002).
[CrossRef]

Herino, R.

J. C. Vial, A. Bsiesy, F. Gaspard, R. Herino, M. Ligeon, F. Muller, R. Romestain, and R. M. Macfarlane, “Mechanisms of visible-light emission from electrooxidized porous silicon,” Phys. Rev. B 45(24), 14171–14176 (1992).
[CrossRef]

Hoff, A. M.

A. J. Kontkiewicz, A. M. Kontkiewicz, J. Siejka, S. Sen, G. Nowak, A. M. Hoff, P. Sakthivel, K. Ahmed, P. Mukherjee, S. Witanachchi, and J. Lagowski, “Evidence that blue luminescence of oxidized porous silicon originates from SiO2,” Appl. Phys. Lett. 65(11), 1436–1438 (1994).
[CrossRef]

Horrocks, B. R.

Hsu, S. W.

Huang, P. R.

Huber, R.

B. Averboukh, R. Huber, K. W. Cheah, Y. R. Shen, G. G. Qin, Z. C. Ma, and W. H. Zong, “Luminescence studies of a Si/SiO2 superlattice,” J. Appl. Phys. 92(7), 3564–3568 (2002).
[CrossRef]

Iacona, F.

F. Iacona, C. Bongiorno, C. Spinella, S. Boninelli, and F. Priolo, “Formation and evolution of luminescent Si nanoclusters produced by thermal annealing of SiOx films,” J. Appl. Phys. 95(7), 3723–3732 (2004).
[CrossRef]

Jivanescu, M.

S. Godefroo, M. Hayne, M. Jivanescu, A. Stesmans, M. Zacharias, O. I. Lebedev, G. Van Tendeloo, and V. V. Moshchalkov, “Classification and control of the origin of photoluminescence from Si nanocrystals,” Nat. Nanotechnol. 3(3), 174–178 (2008).
[CrossRef] [PubMed]

Jorne, J.

M. V. Wolkin, J. Jorne, P. M. Fauchet, G. Allan, and C. Delerue, “Electronic states and luminescence in porous silicon quantum dots: The role of oxygen,” Phys. Rev. Lett. 82(1), 197–200 (1999).
[CrossRef]

Kahler, U.

M. Zacharias, J. Heitmann, R. Scholz, U. Kahler, M. Schmidt, and J. Blasing, “Size-controlled highly luminescent silicon nanocrystals: a SiO/SiO2 superlattice approach,” Appl. Phys. Lett. 80(4), 661–663 (2002).
[CrossRef]

Kanemitsu, Y.

T. Matsumoto, T. Futagi, H. Mimura, and Y. Kanemitsu, “Ultrafast decay dynamics of luminescence in porous silicon,” Phys. Rev. B Condens. Matter 47(20), 13876–13879 (1993).
[CrossRef] [PubMed]

Y. Kanemitsu, T. Ogawa, K. Shiraishi, and K. Takeda, “Visible photoluminescence from oxidized Si nanometer-sized spheres: exciton confinement on a spherical shell,” Phys. Rev. B Condens. Matter 48(7), 4883–4886 (1993).
[CrossRef] [PubMed]

Khriachtchev, L.

L. Khriachtchev, T. Nikitin, R. Velagapudi, J. Lahtinen, and S. Novikov, “Light-emission mechanism of thermally annealed silicon-rich silicon oxide revisited: What is the role of silicon nanocrystals?” Appl. Phys. Lett. 94(4), 043115 (2009).
[CrossRef]

Koch, F.

D. I. Kovalev, I. D. Yaroshetzkii, T. Muschik, V. Petrovakoch, and F. Koch, “Fast and slow visible luminescence bands of oxidized porous Si,” Appl. Phys. Lett. 64(2), 214–216 (1994).
[CrossRef]

Kondo, M.

Kontkiewicz, A. J.

A. J. Kontkiewicz, A. M. Kontkiewicz, J. Siejka, S. Sen, G. Nowak, A. M. Hoff, P. Sakthivel, K. Ahmed, P. Mukherjee, S. Witanachchi, and J. Lagowski, “Evidence that blue luminescence of oxidized porous silicon originates from SiO2,” Appl. Phys. Lett. 65(11), 1436–1438 (1994).
[CrossRef]

Kontkiewicz, A. M.

A. J. Kontkiewicz, A. M. Kontkiewicz, J. Siejka, S. Sen, G. Nowak, A. M. Hoff, P. Sakthivel, K. Ahmed, P. Mukherjee, S. Witanachchi, and J. Lagowski, “Evidence that blue luminescence of oxidized porous silicon originates from SiO2,” Appl. Phys. Lett. 65(11), 1436–1438 (1994).
[CrossRef]

Koshida, N.

H. Mizuno, H. Koyama, and N. Koshida, “Oxide-free blue photoluminescence from photochemically etched porous silicon,” Appl. Phys. Lett. 69(25), 3779–3781 (1996).
[CrossRef]

Kovalev, D. I.

D. I. Kovalev, I. D. Yaroshetzkii, T. Muschik, V. Petrovakoch, and F. Koch, “Fast and slow visible luminescence bands of oxidized porous Si,” Appl. Phys. Lett. 64(2), 214–216 (1994).
[CrossRef]

Koyama, H.

H. Mizuno, H. Koyama, and N. Koshida, “Oxide-free blue photoluminescence from photochemically etched porous silicon,” Appl. Phys. Lett. 69(25), 3779–3781 (1996).
[CrossRef]

Kuo, K. Y.

Lagowski, J.

A. J. Kontkiewicz, A. M. Kontkiewicz, J. Siejka, S. Sen, G. Nowak, A. M. Hoff, P. Sakthivel, K. Ahmed, P. Mukherjee, S. Witanachchi, and J. Lagowski, “Evidence that blue luminescence of oxidized porous silicon originates from SiO2,” Appl. Phys. Lett. 65(11), 1436–1438 (1994).
[CrossRef]

Lahtinen, J.

L. Khriachtchev, T. Nikitin, R. Velagapudi, J. Lahtinen, and S. Novikov, “Light-emission mechanism of thermally annealed silicon-rich silicon oxide revisited: What is the role of silicon nanocrystals?” Appl. Phys. Lett. 94(4), 043115 (2009).
[CrossRef]

Lai, B. H.

Lannoo, M.

C. Delerue, G. Allan, and M. Lannoo, “Theoretical aspects of the luminescence of porous silicon,” Phys. Rev. B Condens. Matter 48(15), 11024–11036 (1993).
[CrossRef] [PubMed]

Lebedev, O. I.

S. Godefroo, M. Hayne, M. Jivanescu, A. Stesmans, M. Zacharias, O. I. Lebedev, G. Van Tendeloo, and V. V. Moshchalkov, “Classification and control of the origin of photoluminescence from Si nanocrystals,” Nat. Nanotechnol. 3(3), 174–178 (2008).
[CrossRef] [PubMed]

Lee, P. T.

Li, H.

X. Yang, X. L. Wu, S. H. Li, H. Li, T. Qiu, Y. M. Yang, P. K. Chu, and G. G. Siu, “Origin of the 370-nm luminescence in Si oxide nanostructures,” Appl. Phys. Lett. 86(20), 201906 (2005).
[CrossRef]

Li, S. H.

X. Yang, X. L. Wu, S. H. Li, H. Li, T. Qiu, Y. M. Yang, P. K. Chu, and G. G. Siu, “Origin of the 370-nm luminescence in Si oxide nanostructures,” Appl. Phys. Lett. 86(20), 201906 (2005).
[CrossRef]

Lian, C. W.

Lien, Y. C.

Ligeon, M.

J. C. Vial, A. Bsiesy, F. Gaspard, R. Herino, M. Ligeon, F. Muller, R. Romestain, and R. M. Macfarlane, “Mechanisms of visible-light emission from electrooxidized porous silicon,” Phys. Rev. B 45(24), 14171–14176 (1992).
[CrossRef]

Lin, G. R.

Lin, J.

G. G. Qin, J. Lin, J. Q. Duan, and G. Q. Yao, “Comparative study of ultraviolet emission with peak wavelengths around 350 nm from oxidized porous silicon and that from SiO2 powder,” Appl. Phys. Lett. 69(12), 1689–1691 (1996).
[CrossRef]

Lin, Y. H.

Little, R.

Liu, C. C.

Liu, X. N.

S. Tong, X. N. Liu, T. Gao, and X. M. Bao, “Intense violet-blue photoluminescence in as-deposited amorphous Si:H:O films,” Appl. Phys. Lett. 71(5), 698–700 (1997).
[CrossRef]

Lockwood, D. J.

D. J. Lockwood, Z. H. Lu, and J. M. Baribeau, “Quantum confined luminescence in Si/SiO2 superlattices,” Phys. Rev. Lett. 76(3), 539–541 (1996).
[CrossRef] [PubMed]

Lu, Z. H.

D. J. Lockwood, Z. H. Lu, and J. M. Baribeau, “Quantum confined luminescence in Si/SiO2 superlattices,” Phys. Rev. Lett. 76(3), 539–541 (1996).
[CrossRef] [PubMed]

Ma, Z. C.

B. Averboukh, R. Huber, K. W. Cheah, Y. R. Shen, G. G. Qin, Z. C. Ma, and W. H. Zong, “Luminescence studies of a Si/SiO2 superlattice,” J. Appl. Phys. 92(7), 3564–3568 (2002).
[CrossRef]

Macfarlane, R. M.

J. C. Vial, A. Bsiesy, F. Gaspard, R. Herino, M. Ligeon, F. Muller, R. Romestain, and R. M. Macfarlane, “Mechanisms of visible-light emission from electrooxidized porous silicon,” Phys. Rev. B 45(24), 14171–14176 (1992).
[CrossRef]

Malý, P.

Mariotti, D.

Matsumoto, T.

T. Matsumoto, T. Futagi, H. Mimura, and Y. Kanemitsu, “Ultrafast decay dynamics of luminescence in porous silicon,” Phys. Rev. B Condens. Matter 47(20), 13876–13879 (1993).
[CrossRef] [PubMed]

Mimura, H.

T. Matsumoto, T. Futagi, H. Mimura, and Y. Kanemitsu, “Ultrafast decay dynamics of luminescence in porous silicon,” Phys. Rev. B Condens. Matter 47(20), 13876–13879 (1993).
[CrossRef] [PubMed]

Misiewicz, J.

X. J. Hao, A. P. Podhorodecki, Y. S. Shen, G. Zatryb, J. Misiewicz, and M. A. Green, “Effects of Si-rich oxide layer stoichiometry on the structural and optical properties of Si QD/SiO2 multilayer films,” Nanotechnology 20(48), 485703 (2009).
[CrossRef] [PubMed]

Mizuno, H.

H. Mizuno, H. Koyama, and N. Koshida, “Oxide-free blue photoluminescence from photochemically etched porous silicon,” Appl. Phys. Lett. 69(25), 3779–3781 (1996).
[CrossRef]

Moshchalkov, V. V.

S. Godefroo, M. Hayne, M. Jivanescu, A. Stesmans, M. Zacharias, O. I. Lebedev, G. Van Tendeloo, and V. V. Moshchalkov, “Classification and control of the origin of photoluminescence from Si nanocrystals,” Nat. Nanotechnol. 3(3), 174–178 (2008).
[CrossRef] [PubMed]

Mukherjee, P.

A. J. Kontkiewicz, A. M. Kontkiewicz, J. Siejka, S. Sen, G. Nowak, A. M. Hoff, P. Sakthivel, K. Ahmed, P. Mukherjee, S. Witanachchi, and J. Lagowski, “Evidence that blue luminescence of oxidized porous silicon originates from SiO2,” Appl. Phys. Lett. 65(11), 1436–1438 (1994).
[CrossRef]

Muller, F.

J. C. Vial, A. Bsiesy, F. Gaspard, R. Herino, M. Ligeon, F. Muller, R. Romestain, and R. M. Macfarlane, “Mechanisms of visible-light emission from electrooxidized porous silicon,” Phys. Rev. B 45(24), 14171–14176 (1992).
[CrossRef]

Muschik, T.

D. I. Kovalev, I. D. Yaroshetzkii, T. Muschik, V. Petrovakoch, and F. Koch, “Fast and slow visible luminescence bands of oxidized porous Si,” Appl. Phys. Lett. 64(2), 214–216 (1994).
[CrossRef]

Nikitin, T.

L. Khriachtchev, T. Nikitin, R. Velagapudi, J. Lahtinen, and S. Novikov, “Light-emission mechanism of thermally annealed silicon-rich silicon oxide revisited: What is the role of silicon nanocrystals?” Appl. Phys. Lett. 94(4), 043115 (2009).
[CrossRef]

Novikov, S.

L. Khriachtchev, T. Nikitin, R. Velagapudi, J. Lahtinen, and S. Novikov, “Light-emission mechanism of thermally annealed silicon-rich silicon oxide revisited: What is the role of silicon nanocrystals?” Appl. Phys. Lett. 94(4), 043115 (2009).
[CrossRef]

Nowak, G.

A. J. Kontkiewicz, A. M. Kontkiewicz, J. Siejka, S. Sen, G. Nowak, A. M. Hoff, P. Sakthivel, K. Ahmed, P. Mukherjee, S. Witanachchi, and J. Lagowski, “Evidence that blue luminescence of oxidized porous silicon originates from SiO2,” Appl. Phys. Lett. 65(11), 1436–1438 (1994).
[CrossRef]

Ogawa, T.

Y. Kanemitsu, T. Ogawa, K. Shiraishi, and K. Takeda, “Visible photoluminescence from oxidized Si nanometer-sized spheres: exciton confinement on a spherical shell,” Phys. Rev. B Condens. Matter 48(7), 4883–4886 (1993).
[CrossRef] [PubMed]

Ondic, L.

Ossicini, S.

R. Guerra and S. Ossicini, “High luminescence in small Si/SiO2 nanocrystals: A theoretical study,” Phys. Rev. B 81(24), 245307 (2010).
[CrossRef]

Pai, Y. H.

B. H. Lai, C. H. Cheng, Y. H. Pai, and G. R. Lin, “Plasma power controlled deposition of SiOx with manipulated Si quantum dot size for photoluminescent wavelength tailoring,” Opt. Express 18(5), 4449–4456 (2010).
[CrossRef] [PubMed]

C. H. Chang, Y. H. Pai, J. H. He, and G. R. Lin, “Wavelength-tunable blue photoluminescence of < 2 nm Si nanocrystal synthesized by ultra-low-flow-density PECVD,” Acta Mater. 58(4), 1270–1275 (2010).
[CrossRef]

Pan, W.

M. S. Carroll, L. Brewer, J. C. Verley, J. Banks, J. J. Sheng, W. Pan, and R. Dunn, “Silicon nanocrystal growth in the long diffusion length regime using high density plasma chemical vapour deposited silicon rich oxides,” Nanotechnology 18(31), 315707 (2007).
[CrossRef]

Pelant, I.

Petrovakoch, V.

D. I. Kovalev, I. D. Yaroshetzkii, T. Muschik, V. Petrovakoch, and F. Koch, “Fast and slow visible luminescence bands of oxidized porous Si,” Appl. Phys. Lett. 64(2), 214–216 (1994).
[CrossRef]

Podhorodecki, A. P.

X. J. Hao, A. P. Podhorodecki, Y. S. Shen, G. Zatryb, J. Misiewicz, and M. A. Green, “Effects of Si-rich oxide layer stoichiometry on the structural and optical properties of Si QD/SiO2 multilayer films,” Nanotechnology 20(48), 485703 (2009).
[CrossRef] [PubMed]

Priolo, F.

F. Iacona, C. Bongiorno, C. Spinella, S. Boninelli, and F. Priolo, “Formation and evolution of luminescent Si nanoclusters produced by thermal annealing of SiOx films,” J. Appl. Phys. 95(7), 3723–3732 (2004).
[CrossRef]

Qin, G. G.

B. Averboukh, R. Huber, K. W. Cheah, Y. R. Shen, G. G. Qin, Z. C. Ma, and W. H. Zong, “Luminescence studies of a Si/SiO2 superlattice,” J. Appl. Phys. 92(7), 3564–3568 (2002).
[CrossRef]

G. G. Qin, J. Lin, J. Q. Duan, and G. Q. Yao, “Comparative study of ultraviolet emission with peak wavelengths around 350 nm from oxidized porous silicon and that from SiO2 powder,” Appl. Phys. Lett. 69(12), 1689–1691 (1996).
[CrossRef]

Qiu, T.

X. Yang, X. L. Wu, S. H. Li, H. Li, T. Qiu, Y. M. Yang, P. K. Chu, and G. G. Siu, “Origin of the 370-nm luminescence in Si oxide nanostructures,” Appl. Phys. Lett. 86(20), 201906 (2005).
[CrossRef]

Romestain, R.

J. C. Vial, A. Bsiesy, F. Gaspard, R. Herino, M. Ligeon, F. Muller, R. Romestain, and R. M. Macfarlane, “Mechanisms of visible-light emission from electrooxidized porous silicon,” Phys. Rev. B 45(24), 14171–14176 (1992).
[CrossRef]

Sa'ar, A.

A. Sa'ar, “Photoluminescence from silicon nanostructures: The mutual role of quantum confinement and surface chemistry,” J. Nanophotonics 3(1), 032501 (2009).
[CrossRef]

Sakthivel, P.

A. J. Kontkiewicz, A. M. Kontkiewicz, J. Siejka, S. Sen, G. Nowak, A. M. Hoff, P. Sakthivel, K. Ahmed, P. Mukherjee, S. Witanachchi, and J. Lagowski, “Evidence that blue luminescence of oxidized porous silicon originates from SiO2,” Appl. Phys. Lett. 65(11), 1436–1438 (1994).
[CrossRef]

Schamm, S.

S. Schamm, C. Bonafos, H. Coffin, N. Cherkashin, M. Carrada, G. Ben Assayag, A. Claverie, M. Tencé, and C. Colliex, “Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS,” Ultramicroscopy 108(4), 346–357 (2008).
[CrossRef] [PubMed]

Schmidt, M.

M. Zacharias, J. Heitmann, R. Scholz, U. Kahler, M. Schmidt, and J. Blasing, “Size-controlled highly luminescent silicon nanocrystals: a SiO/SiO2 superlattice approach,” Appl. Phys. Lett. 80(4), 661–663 (2002).
[CrossRef]

Scholz, R.

M. Zacharias, J. Heitmann, R. Scholz, U. Kahler, M. Schmidt, and J. Blasing, “Size-controlled highly luminescent silicon nanocrystals: a SiO/SiO2 superlattice approach,” Appl. Phys. Lett. 80(4), 661–663 (2002).
[CrossRef]

Sen, S.

A. J. Kontkiewicz, A. M. Kontkiewicz, J. Siejka, S. Sen, G. Nowak, A. M. Hoff, P. Sakthivel, K. Ahmed, P. Mukherjee, S. Witanachchi, and J. Lagowski, “Evidence that blue luminescence of oxidized porous silicon originates from SiO2,” Appl. Phys. Lett. 65(11), 1436–1438 (1994).
[CrossRef]

Shen, Y. R.

B. Averboukh, R. Huber, K. W. Cheah, Y. R. Shen, G. G. Qin, Z. C. Ma, and W. H. Zong, “Luminescence studies of a Si/SiO2 superlattice,” J. Appl. Phys. 92(7), 3564–3568 (2002).
[CrossRef]

Shen, Y. S.

X. J. Hao, A. P. Podhorodecki, Y. S. Shen, G. Zatryb, J. Misiewicz, and M. A. Green, “Effects of Si-rich oxide layer stoichiometry on the structural and optical properties of Si QD/SiO2 multilayer films,” Nanotechnology 20(48), 485703 (2009).
[CrossRef] [PubMed]

Sheng, J. J.

M. S. Carroll, L. Brewer, J. C. Verley, J. Banks, J. J. Sheng, W. Pan, and R. Dunn, “Silicon nanocrystal growth in the long diffusion length regime using high density plasma chemical vapour deposited silicon rich oxides,” Nanotechnology 18(31), 315707 (2007).
[CrossRef]

Shiraishi, K.

Y. Kanemitsu, T. Ogawa, K. Shiraishi, and K. Takeda, “Visible photoluminescence from oxidized Si nanometer-sized spheres: exciton confinement on a spherical shell,” Phys. Rev. B Condens. Matter 48(7), 4883–4886 (1993).
[CrossRef] [PubMed]

Siejka, J.

A. J. Kontkiewicz, A. M. Kontkiewicz, J. Siejka, S. Sen, G. Nowak, A. M. Hoff, P. Sakthivel, K. Ahmed, P. Mukherjee, S. Witanachchi, and J. Lagowski, “Evidence that blue luminescence of oxidized porous silicon originates from SiO2,” Appl. Phys. Lett. 65(11), 1436–1438 (1994).
[CrossRef]

Šiller, L.

Siu, G. G.

X. Yang, X. L. Wu, S. H. Li, H. Li, T. Qiu, Y. M. Yang, P. K. Chu, and G. G. Siu, “Origin of the 370-nm luminescence in Si oxide nanostructures,” Appl. Phys. Lett. 86(20), 201906 (2005).
[CrossRef]

Spinella, C.

F. Iacona, C. Bongiorno, C. Spinella, S. Boninelli, and F. Priolo, “Formation and evolution of luminescent Si nanoclusters produced by thermal annealing of SiOx films,” J. Appl. Phys. 95(7), 3723–3732 (2004).
[CrossRef]

Stesmans, A.

S. Godefroo, M. Hayne, M. Jivanescu, A. Stesmans, M. Zacharias, O. I. Lebedev, G. Van Tendeloo, and V. V. Moshchalkov, “Classification and control of the origin of photoluminescence from Si nanocrystals,” Nat. Nanotechnol. 3(3), 174–178 (2008).
[CrossRef] [PubMed]

Svrcek, V.

Takeda, K.

Y. Kanemitsu, T. Ogawa, K. Shiraishi, and K. Takeda, “Visible photoluminescence from oxidized Si nanometer-sized spheres: exciton confinement on a spherical shell,” Phys. Rev. B Condens. Matter 48(7), 4883–4886 (1993).
[CrossRef] [PubMed]

Tencé, M.

S. Schamm, C. Bonafos, H. Coffin, N. Cherkashin, M. Carrada, G. Ben Assayag, A. Claverie, M. Tencé, and C. Colliex, “Imaging Si nanoparticles embedded in SiO2 layers by (S)TEM-EELS,” Ultramicroscopy 108(4), 346–357 (2008).
[CrossRef] [PubMed]

Tong, S.

S. Tong, X. N. Liu, T. Gao, and X. M. Bao, “Intense violet-blue photoluminescence in as-deposited amorphous Si:H:O films,” Appl. Phys. Lett. 71(5), 698–700 (1997).
[CrossRef]

Trojánek, F.

Van Dao, L.

X. M. Wen, L. Van Dao, P. Hannaford, E. C. Cho, Y. H. Cho, and M. A. Green, “Excitation dependence of photoluminescence in silicon quantum dots,” New J. Phys. 9(9), 337 (2007).
[CrossRef]

Van Tendeloo, G.

S. Godefroo, M. Hayne, M. Jivanescu, A. Stesmans, M. Zacharias, O. I. Lebedev, G. Van Tendeloo, and V. V. Moshchalkov, “Classification and control of the origin of photoluminescence from Si nanocrystals,” Nat. Nanotechnol. 3(3), 174–178 (2008).
[CrossRef] [PubMed]

Velagapudi, R.

L. Khriachtchev, T. Nikitin, R. Velagapudi, J. Lahtinen, and S. Novikov, “Light-emission mechanism of thermally annealed silicon-rich silicon oxide revisited: What is the role of silicon nanocrystals?” Appl. Phys. Lett. 94(4), 043115 (2009).
[CrossRef]

Verley, J. C.

M. S. Carroll, L. Brewer, J. C. Verley, J. Banks, J. J. Sheng, W. Pan, and R. Dunn, “Silicon nanocrystal growth in the long diffusion length regime using high density plasma chemical vapour deposited silicon rich oxides,” Nanotechnology 18(31), 315707 (2007).
[CrossRef]

Vial, J. C.

J. C. Vial, A. Bsiesy, F. Gaspard, R. Herino, M. Ligeon, F. Muller, R. Romestain, and R. M. Macfarlane, “Mechanisms of visible-light emission from electrooxidized porous silicon,” Phys. Rev. B 45(24), 14171–14176 (1992).
[CrossRef]

Wen, X. M.

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X. Yang, X. L. Wu, S. H. Li, H. Li, T. Qiu, Y. M. Yang, P. K. Chu, and G. G. Siu, “Origin of the 370-nm luminescence in Si oxide nanostructures,” Appl. Phys. Lett. 86(20), 201906 (2005).
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[CrossRef]

D. I. Kovalev, I. D. Yaroshetzkii, T. Muschik, V. Petrovakoch, and F. Koch, “Fast and slow visible luminescence bands of oxidized porous Si,” Appl. Phys. Lett. 64(2), 214–216 (1994).
[CrossRef]

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[CrossRef]

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B. Averboukh, R. Huber, K. W. Cheah, Y. R. Shen, G. G. Qin, Z. C. Ma, and W. H. Zong, “Luminescence studies of a Si/SiO2 superlattice,” J. Appl. Phys. 92(7), 3564–3568 (2002).
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Nanotechnology (2)

X. J. Hao, A. P. Podhorodecki, Y. S. Shen, G. Zatryb, J. Misiewicz, and M. A. Green, “Effects of Si-rich oxide layer stoichiometry on the structural and optical properties of Si QD/SiO2 multilayer films,” Nanotechnology 20(48), 485703 (2009).
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[CrossRef] [PubMed]

New J. Phys. (1)

X. M. Wen, L. Van Dao, P. Hannaford, E. C. Cho, Y. H. Cho, and M. A. Green, “Excitation dependence of photoluminescence in silicon quantum dots,” New J. Phys. 9(9), 337 (2007).
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Figures (5)

Fig. 1
Fig. 1

(a) EFTEM-SI image of Sample C with the energy-selection slit tuned to the energy loss region of 16 ~18 eV. Circle 1 indicates a region containing Si NP and circle 2 indicates a region of the surrounding SiOx. Their corresponding EELS spectra are shown in (b). Histogram of Si NP size of (c) Sample A (d) Sample B and (e) Sample C. The particle number is obtained from a 20 nm x 100 nm TEM image.

Fig. 2
Fig. 2

The PL spectra of all studied samples, where curves A-D denote Samples A-D, respectively.

Fig. 3
Fig. 3

HRTEM images of (a) Sample A and (b) Sample C. Their corresponding FFT patterns are shown in (c) and (d). The location of Si NPs is indicated by the dash circles in (a) and (b).

Fig. 4
Fig. 4

The PLE spectra of Sample A monitored at the emission wavelength of (a) 340nm and (b) 410 nm. (c) The PLE spectrum of Sample C monitored at the emission wavelength of 620 nm. All the spectra were normalized to the maximum at ~275 nm for comparison.

Fig. 5
Fig. 5

(a) TRPL traces of Sample A. The emission wavelengths measured in these traces are 275, 285, 295, 305, 315, 325, 335, 345 nm, respectively, from bottom to top. (b) The averaged PL lifetimes as a function of the emission photon energy. Note the solid line is for eye-guiding purpose only.

Tables (1)

Tables Icon

Table 1 The growth condition of the studied samples and their optical properties.

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