Abstract

We report a passively mode-locked vertical external cavity surface emitting laser (VECSEL) producing 400 fs pulses with 4.35 kW peak power. The average output power was 3.3 W and the VECSEL had a repetition rate of 1.67 GHz at a center wavelength of 1013 nm. A near-antiresonant, substrate-removed, 10 quantum well (QW) gain structure designed to enable femtosecond pulse operation is used. A SESAM which uses fast carrier recombination at the semiconductor surface and the optical Stark effect enables passive mode-locking. When 1 W of the VECSEL output is launched into a 2 m long photonic crystal fiber (PCF) with a 2.2 µm core, a supercontinuum spanning 175 nm, with average power 0.5 W is produced.

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  1. O. G. Okhotnikov, Semiconductor Disk Lasers (Wiley-VCH, 2010).
  2. A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
    [CrossRef]
  3. A. Härkönen, C. Grebing, J. Paajaste, R. Koskinen, J.-P. Alanko, S. Suomalainen, G. Steinmeyer, and M. Guina, “Modelocked GaSb disk laser producing 384 fs pulses at 2 µm wavelength,” Electron. Lett.47(7), 454–456 (2011).
    [CrossRef]
  4. M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett.48(10), 588–589 (2012).
    [CrossRef]
  5. Z. Zhao, S. Bouchoule, J. Y. Song, E. Galopin, J.-C. Harmand, J. Decobert, G. Aubin, and J.-L. Oudar, “Subpicosecond pulse generation from a 1.56 μm mode-locked VECSEL,” Opt. Lett.36(22), 4377–4379 (2011).
    [CrossRef] [PubMed]
  6. N. R. Newbury, “Searching for applications with a fine-tooth comb,” Nat. Photonics5(4), 186–188 (2011).
    [CrossRef]
  7. A. Bartels, D. Heinecke, and S. A. Diddams, “10-GHz self-referenced optical frequency comb,” Science326(5953), 681 (2009).
    [CrossRef] [PubMed]
  8. K. G. Wilcox, A. H. Quarterman, H. E. Beere, D. A. Ritchie, and A. C. Tropper, “Repetition-frequency-tunable mode-locked surface emitting semiconductor laser between 2.78 and 7.87 GHz,” Opt. Express19(23), 23453–23459 (2011).
    [CrossRef] [PubMed]
  9. O. D. Sieber, V. J. Wittwer, M. Mangold, M. Hoffmann, M. Golling, T. Südmeyer, and U. Keller, “Femtosecond VECSEL with tunable multi-gigahertz repetition rate,” Opt. Express19(23), 23538–23543 (2011).
    [CrossRef] [PubMed]
  10. B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012).
    [CrossRef]
  11. M. Hoffmann, O. D. Sieber, V. J. Wittwer, I. L. Krestnikov, D. A. Livshits, Y. Barbarin, T. Südmeyer, and U. Keller, “Femtosecond high-power quantum dot vertical external cavity surface emitting laser,” Opt. Express19(9), 8108–8116 (2011).
    [CrossRef] [PubMed]
  12. P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett.98(7), 071103 (2011).
    [CrossRef]
  13. L. Bernstein, “Semiconductor joining by the Solid-Liquid-Interdiffusion (SLID) Process: 1. The systems Ag-In, Au-In and Cu-In,” J. Electrochem. Soc.113(12), 1282–1288 (1966).
    [CrossRef]
  14. A. C. Tropper, A. H. Quarterman, and K. G. Wilcox, “Ultrafast vertical-external-cavity surface-emitting semiconductor lasers,” in Semiconductors and Semimetals 86: Advances in Semiconductor Lasers, J. J. Coleman, A. C. Bryce, and C. Jagadish, eds. (Elsevier, 2012) pp. 269–300.
  15. K. G. Wilcox, A. H. Quarterman, H. Beere, D. A. Ritchie, and A. C. Tropper, “High peak power femtosecond pulse passively mode-locked vertical-external-cavity surface-emitting laser,” Phot. Tech. Lett.22(14), 1021–1023 (2010).
    [CrossRef]

2012 (2)

M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett.48(10), 588–589 (2012).
[CrossRef]

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012).
[CrossRef]

2011 (7)

M. Hoffmann, O. D. Sieber, V. J. Wittwer, I. L. Krestnikov, D. A. Livshits, Y. Barbarin, T. Südmeyer, and U. Keller, “Femtosecond high-power quantum dot vertical external cavity surface emitting laser,” Opt. Express19(9), 8108–8116 (2011).
[CrossRef] [PubMed]

P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett.98(7), 071103 (2011).
[CrossRef]

Z. Zhao, S. Bouchoule, J. Y. Song, E. Galopin, J.-C. Harmand, J. Decobert, G. Aubin, and J.-L. Oudar, “Subpicosecond pulse generation from a 1.56 μm mode-locked VECSEL,” Opt. Lett.36(22), 4377–4379 (2011).
[CrossRef] [PubMed]

N. R. Newbury, “Searching for applications with a fine-tooth comb,” Nat. Photonics5(4), 186–188 (2011).
[CrossRef]

A. Härkönen, C. Grebing, J. Paajaste, R. Koskinen, J.-P. Alanko, S. Suomalainen, G. Steinmeyer, and M. Guina, “Modelocked GaSb disk laser producing 384 fs pulses at 2 µm wavelength,” Electron. Lett.47(7), 454–456 (2011).
[CrossRef]

K. G. Wilcox, A. H. Quarterman, H. E. Beere, D. A. Ritchie, and A. C. Tropper, “Repetition-frequency-tunable mode-locked surface emitting semiconductor laser between 2.78 and 7.87 GHz,” Opt. Express19(23), 23453–23459 (2011).
[CrossRef] [PubMed]

O. D. Sieber, V. J. Wittwer, M. Mangold, M. Hoffmann, M. Golling, T. Südmeyer, and U. Keller, “Femtosecond VECSEL with tunable multi-gigahertz repetition rate,” Opt. Express19(23), 23538–23543 (2011).
[CrossRef] [PubMed]

2010 (1)

K. G. Wilcox, A. H. Quarterman, H. Beere, D. A. Ritchie, and A. C. Tropper, “High peak power femtosecond pulse passively mode-locked vertical-external-cavity surface-emitting laser,” Phot. Tech. Lett.22(14), 1021–1023 (2010).
[CrossRef]

2009 (2)

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

A. Bartels, D. Heinecke, and S. A. Diddams, “10-GHz self-referenced optical frequency comb,” Science326(5953), 681 (2009).
[CrossRef] [PubMed]

1966 (1)

L. Bernstein, “Semiconductor joining by the Solid-Liquid-Interdiffusion (SLID) Process: 1. The systems Ag-In, Au-In and Cu-In,” J. Electrochem. Soc.113(12), 1282–1288 (1966).
[CrossRef]

Alanko, J.-P.

A. Härkönen, C. Grebing, J. Paajaste, R. Koskinen, J.-P. Alanko, S. Suomalainen, G. Steinmeyer, and M. Guina, “Modelocked GaSb disk laser producing 384 fs pulses at 2 µm wavelength,” Electron. Lett.47(7), 454–456 (2011).
[CrossRef]

Apostolopoulos, V.

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

Aubin, G.

Barbarin, Y.

Bartels, A.

A. Bartels, D. Heinecke, and S. A. Diddams, “10-GHz self-referenced optical frequency comb,” Science326(5953), 681 (2009).
[CrossRef] [PubMed]

Beere, H.

K. G. Wilcox, A. H. Quarterman, H. Beere, D. A. Ritchie, and A. C. Tropper, “High peak power femtosecond pulse passively mode-locked vertical-external-cavity surface-emitting laser,” Phot. Tech. Lett.22(14), 1021–1023 (2010).
[CrossRef]

Beere, H. E.

Bernstein, L.

L. Bernstein, “Semiconductor joining by the Solid-Liquid-Interdiffusion (SLID) Process: 1. The systems Ag-In, Au-In and Cu-In,” J. Electrochem. Soc.113(12), 1282–1288 (1966).
[CrossRef]

Bouchoule, S.

Decobert, J.

Diddams, S. A.

A. Bartels, D. Heinecke, and S. A. Diddams, “10-GHz self-referenced optical frequency comb,” Science326(5953), 681 (2009).
[CrossRef] [PubMed]

Elsmere, S. P.

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

Farrer, I.

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

Galopin, E.

Golling, M.

Grebing, C.

A. Härkönen, C. Grebing, J. Paajaste, R. Koskinen, J.-P. Alanko, S. Suomalainen, G. Steinmeyer, and M. Guina, “Modelocked GaSb disk laser producing 384 fs pulses at 2 µm wavelength,” Electron. Lett.47(7), 454–456 (2011).
[CrossRef]

Griebner, U.

P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett.98(7), 071103 (2011).
[CrossRef]

Guina, M.

A. Härkönen, C. Grebing, J. Paajaste, R. Koskinen, J.-P. Alanko, S. Suomalainen, G. Steinmeyer, and M. Guina, “Modelocked GaSb disk laser producing 384 fs pulses at 2 µm wavelength,” Electron. Lett.47(7), 454–456 (2011).
[CrossRef]

Hader, J.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012).
[CrossRef]

Härkönen, A.

A. Härkönen, C. Grebing, J. Paajaste, R. Koskinen, J.-P. Alanko, S. Suomalainen, G. Steinmeyer, and M. Guina, “Modelocked GaSb disk laser producing 384 fs pulses at 2 µm wavelength,” Electron. Lett.47(7), 454–456 (2011).
[CrossRef]

Harmand, J.-C.

Heinecke, D.

A. Bartels, D. Heinecke, and S. A. Diddams, “10-GHz self-referenced optical frequency comb,” Science326(5953), 681 (2009).
[CrossRef] [PubMed]

Heinen, B.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012).
[CrossRef]

Hoffmann, M.

Keller, U.

Klopp, P.

P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett.98(7), 071103 (2011).
[CrossRef]

Koch, M.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012).
[CrossRef]

Koch, S. W.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012).
[CrossRef]

M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett.48(10), 588–589 (2012).
[CrossRef]

Koskinen, R.

A. Härkönen, C. Grebing, J. Paajaste, R. Koskinen, J.-P. Alanko, S. Suomalainen, G. Steinmeyer, and M. Guina, “Modelocked GaSb disk laser producing 384 fs pulses at 2 µm wavelength,” Electron. Lett.47(7), 454–456 (2011).
[CrossRef]

Krestnikov, I. L.

Kunert, B.

M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett.48(10), 588–589 (2012).
[CrossRef]

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012).
[CrossRef]

Livshits, D. A.

Mangold, M.

Mihoubi, Z.

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

Moloney, J. V.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012).
[CrossRef]

M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett.48(10), 588–589 (2012).
[CrossRef]

Newbury, N. R.

N. R. Newbury, “Searching for applications with a fine-tooth comb,” Nat. Photonics5(4), 186–188 (2011).
[CrossRef]

Oudar, J.-L.

Paajaste, J.

A. Härkönen, C. Grebing, J. Paajaste, R. Koskinen, J.-P. Alanko, S. Suomalainen, G. Steinmeyer, and M. Guina, “Modelocked GaSb disk laser producing 384 fs pulses at 2 µm wavelength,” Electron. Lett.47(7), 454–456 (2011).
[CrossRef]

Quarterman, A. H.

K. G. Wilcox, A. H. Quarterman, H. E. Beere, D. A. Ritchie, and A. C. Tropper, “Repetition-frequency-tunable mode-locked surface emitting semiconductor laser between 2.78 and 7.87 GHz,” Opt. Express19(23), 23453–23459 (2011).
[CrossRef] [PubMed]

K. G. Wilcox, A. H. Quarterman, H. Beere, D. A. Ritchie, and A. C. Tropper, “High peak power femtosecond pulse passively mode-locked vertical-external-cavity surface-emitting laser,” Phot. Tech. Lett.22(14), 1021–1023 (2010).
[CrossRef]

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

Ritchie, D. A.

K. G. Wilcox, A. H. Quarterman, H. E. Beere, D. A. Ritchie, and A. C. Tropper, “Repetition-frequency-tunable mode-locked surface emitting semiconductor laser between 2.78 and 7.87 GHz,” Opt. Express19(23), 23453–23459 (2011).
[CrossRef] [PubMed]

K. G. Wilcox, A. H. Quarterman, H. Beere, D. A. Ritchie, and A. C. Tropper, “High peak power femtosecond pulse passively mode-locked vertical-external-cavity surface-emitting laser,” Phot. Tech. Lett.22(14), 1021–1023 (2010).
[CrossRef]

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

Scheller, M.

M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett.48(10), 588–589 (2012).
[CrossRef]

Sieber, O. D.

Song, J. Y.

Sparenberg, M.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012).
[CrossRef]

Steinmeyer, G.

A. Härkönen, C. Grebing, J. Paajaste, R. Koskinen, J.-P. Alanko, S. Suomalainen, G. Steinmeyer, and M. Guina, “Modelocked GaSb disk laser producing 384 fs pulses at 2 µm wavelength,” Electron. Lett.47(7), 454–456 (2011).
[CrossRef]

Stolz, W.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012).
[CrossRef]

M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett.48(10), 588–589 (2012).
[CrossRef]

Südmeyer, T.

Suomalainen, S.

A. Härkönen, C. Grebing, J. Paajaste, R. Koskinen, J.-P. Alanko, S. Suomalainen, G. Steinmeyer, and M. Guina, “Modelocked GaSb disk laser producing 384 fs pulses at 2 µm wavelength,” Electron. Lett.47(7), 454–456 (2011).
[CrossRef]

Tropper, A.

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

Tropper, A. C.

K. G. Wilcox, A. H. Quarterman, H. E. Beere, D. A. Ritchie, and A. C. Tropper, “Repetition-frequency-tunable mode-locked surface emitting semiconductor laser between 2.78 and 7.87 GHz,” Opt. Express19(23), 23453–23459 (2011).
[CrossRef] [PubMed]

K. G. Wilcox, A. H. Quarterman, H. Beere, D. A. Ritchie, and A. C. Tropper, “High peak power femtosecond pulse passively mode-locked vertical-external-cavity surface-emitting laser,” Phot. Tech. Lett.22(14), 1021–1023 (2010).
[CrossRef]

Wang, T.-L.

M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett.48(10), 588–589 (2012).
[CrossRef]

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012).
[CrossRef]

Weber, A.

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012).
[CrossRef]

Weyers, M.

P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett.98(7), 071103 (2011).
[CrossRef]

Wilcox, K. G.

K. G. Wilcox, A. H. Quarterman, H. E. Beere, D. A. Ritchie, and A. C. Tropper, “Repetition-frequency-tunable mode-locked surface emitting semiconductor laser between 2.78 and 7.87 GHz,” Opt. Express19(23), 23453–23459 (2011).
[CrossRef] [PubMed]

K. G. Wilcox, A. H. Quarterman, H. Beere, D. A. Ritchie, and A. C. Tropper, “High peak power femtosecond pulse passively mode-locked vertical-external-cavity surface-emitting laser,” Phot. Tech. Lett.22(14), 1021–1023 (2010).
[CrossRef]

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

Wittwer, V. J.

Zhao, Z.

Zorn, M.

P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett.98(7), 071103 (2011).
[CrossRef]

Appl. Phys. Lett. (1)

P. Klopp, U. Griebner, M. Zorn, and M. Weyers, “Pulse repetition rate up to 92 GHz or pulse duration shorter than 110 fs from a mode-locked semiconductor disk laser,” Appl. Phys. Lett.98(7), 071103 (2011).
[CrossRef]

Electron. Lett. (3)

B. Heinen, T.-L. Wang, M. Sparenberg, A. Weber, B. Kunert, J. Hader, S. W. Koch, J. V. Moloney, M. Koch, and W. Stolz, “106 W continuous-wave output power from vertical-external-cavity surface-emitting laser,” Electron. Lett.48(9), 516–517 (2012).
[CrossRef]

A. Härkönen, C. Grebing, J. Paajaste, R. Koskinen, J.-P. Alanko, S. Suomalainen, G. Steinmeyer, and M. Guina, “Modelocked GaSb disk laser producing 384 fs pulses at 2 µm wavelength,” Electron. Lett.47(7), 454–456 (2011).
[CrossRef]

M. Scheller, T.-L. Wang, B. Kunert, W. Stolz, S. W. Koch, and J. V. Moloney, “Passively modelocked VECSEL emitting 682 fs pulses with 5.1 W of average output power,” Electron. Lett.48(10), 588–589 (2012).
[CrossRef]

J. Electrochem. Soc. (1)

L. Bernstein, “Semiconductor joining by the Solid-Liquid-Interdiffusion (SLID) Process: 1. The systems Ag-In, Au-In and Cu-In,” J. Electrochem. Soc.113(12), 1282–1288 (1966).
[CrossRef]

Nat. Photonics (2)

A. H. Quarterman, K. G. Wilcox, V. Apostolopoulos, Z. Mihoubi, S. P. Elsmere, I. Farrer, D. A. Ritchie, and A. Tropper, “A passively mode-locked external-cavity semiconductor laser emitting 60-fs pulses,” Nat. Photonics3(12), 729–731 (2009).
[CrossRef]

N. R. Newbury, “Searching for applications with a fine-tooth comb,” Nat. Photonics5(4), 186–188 (2011).
[CrossRef]

Opt. Express (3)

Opt. Lett. (1)

Phot. Tech. Lett. (1)

K. G. Wilcox, A. H. Quarterman, H. Beere, D. A. Ritchie, and A. C. Tropper, “High peak power femtosecond pulse passively mode-locked vertical-external-cavity surface-emitting laser,” Phot. Tech. Lett.22(14), 1021–1023 (2010).
[CrossRef]

Science (1)

A. Bartels, D. Heinecke, and S. A. Diddams, “10-GHz self-referenced optical frequency comb,” Science326(5953), 681 (2009).
[CrossRef] [PubMed]

Other (2)

O. G. Okhotnikov, Semiconductor Disk Lasers (Wiley-VCH, 2010).

A. C. Tropper, A. H. Quarterman, and K. G. Wilcox, “Ultrafast vertical-external-cavity surface-emitting semiconductor lasers,” in Semiconductors and Semimetals 86: Advances in Semiconductor Lasers, J. J. Coleman, A. C. Bryce, and C. Jagadish, eds. (Elsevier, 2012) pp. 269–300.

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Figures (5)

Fig. 1
Fig. 1

Schematic of the resonant (a) and near-antiresonant (b) gain structures. The positions of the quantum wells are represented by short vertical red lines. The calculated intensity on the quantum wells versus wavelength is shown in (c) and the device dispersion is shown in (d).

Fig. 2
Fig. 2

(a) Top photoluminescence emitted from the resonant and near-antiresonant structures with an incident pump power of 28.5 W. (b) Output power versus pump power for different output coupler transmission for the resonant and (c) near-antiresonant structures.

Fig. 3
Fig. 3

Pulse duration (black squares) and centre wavelength (red circles) versus output power for the mode-locked VECSEL

Fig. 4
Fig. 4

Measured autocorrelation (left) and optical spectrum (right) of 400 fs sech2 profile pulse with 3.3 W average output power.

Fig. 5
Fig. 5

Measured supercontinuum generated by launching 1 W of the VECSEL output power into a 2.2 micron core PCF. The supercontinuum has a width of 175 nm and a power of 0.5 W.

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