Abstract

Single-mode lasers below 630 nm are still realized using complex laser systems. We present distributed Bragg reflector (DBR) ridge waveguide lasers (RWL) based on AlGaInP. When packaged into sealed TO-3 housings and cooled internally to about 0°C the DBR-RWL emit more than 50 mW at a wavelength of 626.0 nm into a nearly diffraction-limited single longitudinal mode with a spectral width below 1 MHz. These new monolithic diode lasers have the potential to drastically miniaturize existing set-ups e.g. for quantum information processing.

© 2013 OSA

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    [CrossRef]

2013 (3)

G. Blume, M. Schiemangk, J. Pohl, D. Feise, P. Ressel, B. Sumpf, A. Wicht, and K. Paschke, “Narrow Linewidth of 633-nm DBR Ridge-Waveguide Lasers,” IEEE Photon. Technol. Lett.25(6), 550–552 (2013).
[CrossRef]

H. Ball, M. W. Lee, S. D. Gensemer, and M. J. Biercuk, “A high-power 626 nm diode laser system for Beryllium ion trapping,” Rev. Sci. Instrum.84(6), 063107 (2013).
[CrossRef] [PubMed]

F. M. J. Cozijn, J. Biesheuvel, A. S. Flores, W. Ubachs, G. Blume, A. Wicht, K. Paschke, G. Erbert, and J. C. J. Koelemeij, “Laser cooling of beryllium ions using a frequency-doubled 626 nm diode laser,” Opt. Lett.38(13), 2370–2372 (2013).
[CrossRef] [PubMed]

2012 (3)

2011 (2)

T. Nishida, N. Shimada, T. Ogawa, M. Miyashita, and T. Yagi, “Short wavelength limitation in high power AlGaInP laser diodes,” Proc. SPIE7918, 791811 (2011).
[CrossRef]

A. I. Bawamia, G. Blume, B. Eppich, A. Ginolas, S. Spießerger, M. Thomas, B. Sumpf, and G. Erbert, “Miniaturized tunable external cavity diode laser with single-mode operation and a narrow linewidth at 633 nm,” IEEE Photon. Technol. Lett.23(22), 1676–1678 (2011).
[CrossRef]

2009 (2)

R. Bohdan, A. Bercha, W. Trzeciakowski, F. Dybała, B. Piechal, M. B. Sanayeh, M. Reufer, and P. Brick, “Room temperature 633 nm tapered diode lasers with external wavelength stabilization,” IET Optoelectron.3(6), 320–325 (2009).
[CrossRef]

H. Y. Lin, H. M. Tan, J. G. Miao, T. C. Cui, S. C. Su, and J. Guo, “Extra-cavity, widely tunable, continuous wave MgO-doped PPLN optical parametric oscillator pumped with a Nd:YVO4 laser,” Opt. Mater.32(1), 257–260 (2009).
[CrossRef]

2008 (2)

R. Bohdan, A. Bercha, W. Trzeciakowski, F. Dybała, B. Piechal, M. B. Sanayeh, M. Reufer, and P. Brick, “Yellow AlGaInP/InGaP laser diodes achieved by pressure and temperature tuning,” J. Appl. Phys.104(6), 063105 (2008).
[CrossRef]

C. Kaspari, M. Zorn, M. Weyers, and G. Erbert, “Growth parameter optimization of the GaInP/AlGaInP active zone of 635nm red laser diodes,” J. Cryst. Growth310(23), 5175–5177 (2008).
[CrossRef]

2001 (2)

P. Bienstman and R. Baets, “Optical modelling of photonic crystals and VCSELs using eigenmode expansion and perfectly matched layers,” Opt. Quantum Electron.33(4/5), 327–341 (2001).
[CrossRef]

I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, “Band parameters for III–V compound semiconductors and their alloys,” J. Appl. Phys.89(11), 5815–5875 (2001).
[CrossRef]

2000 (1)

B. Pezeshki, M. Hagberg, B. Lu, M. Zelinski, S. Zou, and E. I. Kolev, “High power and diffraction-limited red lasers,” Proc. SPIE3947, 80–90 (2000).
[CrossRef]

1995 (2)

F. Barth, H.-P. Gauggel, C. Geng, F. Scholz, J. Hommel, R. Winterhoff, and H. Schweizer, “Fabrication and operation of first-order GaInP/AlGaInP DFB lasers at room temperature,” Electron. Lett.31(5), 367–368 (1995).
[CrossRef]

C. Monroe, D. M. Meekhof, B. E. King, S. R. Jefferts, W. M. Itano, D. J. Wineland, and P. Gould, “Resolved-Sideband Raman Cooling of a Bound Atom to the 3D Zero-Point Energy,” Phys. Rev. Lett.75(22), 4011–4014 (1995).
[CrossRef] [PubMed]

1991 (1)

G. Hatakoshi, K. Itaya, M. Ishikawa, M. Okajima, and Y. Uematsu, “Short-wavelength InGaAlP visible laser-diodes,” IEEE J. Quantum Electron.27(6), 1476–1482 (1991).
[CrossRef]

1982 (1)

Baets, R.

P. Bienstman and R. Baets, “Optical modelling of photonic crystals and VCSELs using eigenmode expansion and perfectly matched layers,” Opt. Quantum Electron.33(4/5), 327–341 (2001).
[CrossRef]

Ball, H.

H. Ball, M. W. Lee, S. D. Gensemer, and M. J. Biercuk, “A high-power 626 nm diode laser system for Beryllium ion trapping,” Rev. Sci. Instrum.84(6), 063107 (2013).
[CrossRef] [PubMed]

Barth, F.

F. Barth, H.-P. Gauggel, C. Geng, F. Scholz, J. Hommel, R. Winterhoff, and H. Schweizer, “Fabrication and operation of first-order GaInP/AlGaInP DFB lasers at room temperature,” Electron. Lett.31(5), 367–368 (1995).
[CrossRef]

Bawamia, A. I.

A. I. Bawamia, G. Blume, B. Eppich, A. Ginolas, S. Spießerger, M. Thomas, B. Sumpf, and G. Erbert, “Miniaturized tunable external cavity diode laser with single-mode operation and a narrow linewidth at 633 nm,” IEEE Photon. Technol. Lett.23(22), 1676–1678 (2011).
[CrossRef]

Bercha, A.

R. Bohdan, A. Bercha, W. Trzeciakowski, F. Dybała, B. Piechal, M. B. Sanayeh, M. Reufer, and P. Brick, “Room temperature 633 nm tapered diode lasers with external wavelength stabilization,” IET Optoelectron.3(6), 320–325 (2009).
[CrossRef]

R. Bohdan, A. Bercha, W. Trzeciakowski, F. Dybała, B. Piechal, M. B. Sanayeh, M. Reufer, and P. Brick, “Yellow AlGaInP/InGaP laser diodes achieved by pressure and temperature tuning,” J. Appl. Phys.104(6), 063105 (2008).
[CrossRef]

Bienstman, P.

P. Bienstman and R. Baets, “Optical modelling of photonic crystals and VCSELs using eigenmode expansion and perfectly matched layers,” Opt. Quantum Electron.33(4/5), 327–341 (2001).
[CrossRef]

Biercuk, M. J.

H. Ball, M. W. Lee, S. D. Gensemer, and M. J. Biercuk, “A high-power 626 nm diode laser system for Beryllium ion trapping,” Rev. Sci. Instrum.84(6), 063107 (2013).
[CrossRef] [PubMed]

Biesheuvel, J.

Blume, G.

Bohdan, R.

R. Bohdan, A. Bercha, W. Trzeciakowski, F. Dybała, B. Piechal, M. B. Sanayeh, M. Reufer, and P. Brick, “Room temperature 633 nm tapered diode lasers with external wavelength stabilization,” IET Optoelectron.3(6), 320–325 (2009).
[CrossRef]

R. Bohdan, A. Bercha, W. Trzeciakowski, F. Dybała, B. Piechal, M. B. Sanayeh, M. Reufer, and P. Brick, “Yellow AlGaInP/InGaP laser diodes achieved by pressure and temperature tuning,” J. Appl. Phys.104(6), 063105 (2008).
[CrossRef]

Brady, R. H.

Brick, P.

R. Bohdan, A. Bercha, W. Trzeciakowski, F. Dybała, B. Piechal, M. B. Sanayeh, M. Reufer, and P. Brick, “Room temperature 633 nm tapered diode lasers with external wavelength stabilization,” IET Optoelectron.3(6), 320–325 (2009).
[CrossRef]

R. Bohdan, A. Bercha, W. Trzeciakowski, F. Dybała, B. Piechal, M. B. Sanayeh, M. Reufer, and P. Brick, “Yellow AlGaInP/InGaP laser diodes achieved by pressure and temperature tuning,” J. Appl. Phys.104(6), 063105 (2008).
[CrossRef]

Bugge, F.

Cozijn, F. M. J.

Cui, T. C.

H. Y. Lin, H. M. Tan, J. G. Miao, T. C. Cui, S. C. Su, and J. Guo, “Extra-cavity, widely tunable, continuous wave MgO-doped PPLN optical parametric oscillator pumped with a Nd:YVO4 laser,” Opt. Mater.32(1), 257–260 (2009).
[CrossRef]

Dybala, F.

R. Bohdan, A. Bercha, W. Trzeciakowski, F. Dybała, B. Piechal, M. B. Sanayeh, M. Reufer, and P. Brick, “Room temperature 633 nm tapered diode lasers with external wavelength stabilization,” IET Optoelectron.3(6), 320–325 (2009).
[CrossRef]

R. Bohdan, A. Bercha, W. Trzeciakowski, F. Dybała, B. Piechal, M. B. Sanayeh, M. Reufer, and P. Brick, “Yellow AlGaInP/InGaP laser diodes achieved by pressure and temperature tuning,” J. Appl. Phys.104(6), 063105 (2008).
[CrossRef]

Eppich, B.

A. I. Bawamia, G. Blume, B. Eppich, A. Ginolas, S. Spießerger, M. Thomas, B. Sumpf, and G. Erbert, “Miniaturized tunable external cavity diode laser with single-mode operation and a narrow linewidth at 633 nm,” IEEE Photon. Technol. Lett.23(22), 1676–1678 (2011).
[CrossRef]

Erbert, G.

F. M. J. Cozijn, J. Biesheuvel, A. S. Flores, W. Ubachs, G. Blume, A. Wicht, K. Paschke, G. Erbert, and J. C. J. Koelemeij, “Laser cooling of beryllium ions using a frequency-doubled 626 nm diode laser,” Opt. Lett.38(13), 2370–2372 (2013).
[CrossRef] [PubMed]

D. Feise, W. John, F. Bugge, G. Blume, T. Hassoun, J. Fricke, K. Paschke, and G. Erbert, “96 mW longitudinal single mode red-emitting distributed Bragg reflector ridge waveguide laser with tenth order surface gratings,” Opt. Lett.37(9), 1532–1534 (2012).
[CrossRef] [PubMed]

J. Fricke, W. John, A. Klehr, P. Ressel, L. Weixelbaum, H. Wenzel, and G. Erbert, “Properties and fabrication of high-order Bragg gratings for wavelength stabilization of diode lasers,” Semicond. Sci. Technol.27(5), 055009 (2012).
[CrossRef]

A. I. Bawamia, G. Blume, B. Eppich, A. Ginolas, S. Spießerger, M. Thomas, B. Sumpf, and G. Erbert, “Miniaturized tunable external cavity diode laser with single-mode operation and a narrow linewidth at 633 nm,” IEEE Photon. Technol. Lett.23(22), 1676–1678 (2011).
[CrossRef]

C. Kaspari, M. Zorn, M. Weyers, and G. Erbert, “Growth parameter optimization of the GaInP/AlGaInP active zone of 635nm red laser diodes,” J. Cryst. Growth310(23), 5175–5177 (2008).
[CrossRef]

Feise, D.

Fiebig, C.

Flores, A. S.

Fricke, J.

D. Feise, W. John, F. Bugge, G. Blume, T. Hassoun, J. Fricke, K. Paschke, and G. Erbert, “96 mW longitudinal single mode red-emitting distributed Bragg reflector ridge waveguide laser with tenth order surface gratings,” Opt. Lett.37(9), 1532–1534 (2012).
[CrossRef] [PubMed]

J. Fricke, W. John, A. Klehr, P. Ressel, L. Weixelbaum, H. Wenzel, and G. Erbert, “Properties and fabrication of high-order Bragg gratings for wavelength stabilization of diode lasers,” Semicond. Sci. Technol.27(5), 055009 (2012).
[CrossRef]

Gauggel, H.-P.

F. Barth, H.-P. Gauggel, C. Geng, F. Scholz, J. Hommel, R. Winterhoff, and H. Schweizer, “Fabrication and operation of first-order GaInP/AlGaInP DFB lasers at room temperature,” Electron. Lett.31(5), 367–368 (1995).
[CrossRef]

Geng, C.

F. Barth, H.-P. Gauggel, C. Geng, F. Scholz, J. Hommel, R. Winterhoff, and H. Schweizer, “Fabrication and operation of first-order GaInP/AlGaInP DFB lasers at room temperature,” Electron. Lett.31(5), 367–368 (1995).
[CrossRef]

Gensemer, S. D.

H. Ball, M. W. Lee, S. D. Gensemer, and M. J. Biercuk, “A high-power 626 nm diode laser system for Beryllium ion trapping,” Rev. Sci. Instrum.84(6), 063107 (2013).
[CrossRef] [PubMed]

Ginolas, A.

A. I. Bawamia, G. Blume, B. Eppich, A. Ginolas, S. Spießerger, M. Thomas, B. Sumpf, and G. Erbert, “Miniaturized tunable external cavity diode laser with single-mode operation and a narrow linewidth at 633 nm,” IEEE Photon. Technol. Lett.23(22), 1676–1678 (2011).
[CrossRef]

Gould, P.

C. Monroe, D. M. Meekhof, B. E. King, S. R. Jefferts, W. M. Itano, D. J. Wineland, and P. Gould, “Resolved-Sideband Raman Cooling of a Bound Atom to the 3D Zero-Point Energy,” Phys. Rev. Lett.75(22), 4011–4014 (1995).
[CrossRef] [PubMed]

Guo, J.

H. Y. Lin, H. M. Tan, J. G. Miao, T. C. Cui, S. C. Su, and J. Guo, “Extra-cavity, widely tunable, continuous wave MgO-doped PPLN optical parametric oscillator pumped with a Nd:YVO4 laser,” Opt. Mater.32(1), 257–260 (2009).
[CrossRef]

Hagberg, M.

B. Pezeshki, M. Hagberg, B. Lu, M. Zelinski, S. Zou, and E. I. Kolev, “High power and diffraction-limited red lasers,” Proc. SPIE3947, 80–90 (2000).
[CrossRef]

Hassoun, T.

Hatakoshi, G.

G. Hatakoshi, K. Itaya, M. Ishikawa, M. Okajima, and Y. Uematsu, “Short-wavelength InGaAlP visible laser-diodes,” IEEE J. Quantum Electron.27(6), 1476–1482 (1991).
[CrossRef]

Hommel, J.

F. Barth, H.-P. Gauggel, C. Geng, F. Scholz, J. Hommel, R. Winterhoff, and H. Schweizer, “Fabrication and operation of first-order GaInP/AlGaInP DFB lasers at room temperature,” Electron. Lett.31(5), 367–368 (1995).
[CrossRef]

Ishikawa, M.

G. Hatakoshi, K. Itaya, M. Ishikawa, M. Okajima, and Y. Uematsu, “Short-wavelength InGaAlP visible laser-diodes,” IEEE J. Quantum Electron.27(6), 1476–1482 (1991).
[CrossRef]

Itano, W. M.

C. Monroe, D. M. Meekhof, B. E. King, S. R. Jefferts, W. M. Itano, D. J. Wineland, and P. Gould, “Resolved-Sideband Raman Cooling of a Bound Atom to the 3D Zero-Point Energy,” Phys. Rev. Lett.75(22), 4011–4014 (1995).
[CrossRef] [PubMed]

Itaya, K.

G. Hatakoshi, K. Itaya, M. Ishikawa, M. Okajima, and Y. Uematsu, “Short-wavelength InGaAlP visible laser-diodes,” IEEE J. Quantum Electron.27(6), 1476–1482 (1991).
[CrossRef]

Jefferts, S. R.

C. Monroe, D. M. Meekhof, B. E. King, S. R. Jefferts, W. M. Itano, D. J. Wineland, and P. Gould, “Resolved-Sideband Raman Cooling of a Bound Atom to the 3D Zero-Point Energy,” Phys. Rev. Lett.75(22), 4011–4014 (1995).
[CrossRef] [PubMed]

John, W.

Johnston, T. F.

Kaspari, C.

C. Kaspari, M. Zorn, M. Weyers, and G. Erbert, “Growth parameter optimization of the GaInP/AlGaInP active zone of 635nm red laser diodes,” J. Cryst. Growth310(23), 5175–5177 (2008).
[CrossRef]

King, B. E.

C. Monroe, D. M. Meekhof, B. E. King, S. R. Jefferts, W. M. Itano, D. J. Wineland, and P. Gould, “Resolved-Sideband Raman Cooling of a Bound Atom to the 3D Zero-Point Energy,” Phys. Rev. Lett.75(22), 4011–4014 (1995).
[CrossRef] [PubMed]

Klehr, A.

J. Fricke, W. John, A. Klehr, P. Ressel, L. Weixelbaum, H. Wenzel, and G. Erbert, “Properties and fabrication of high-order Bragg gratings for wavelength stabilization of diode lasers,” Semicond. Sci. Technol.27(5), 055009 (2012).
[CrossRef]

Koelemeij, J. C. J.

Kolev, E. I.

B. Pezeshki, M. Hagberg, B. Lu, M. Zelinski, S. Zou, and E. I. Kolev, “High power and diffraction-limited red lasers,” Proc. SPIE3947, 80–90 (2000).
[CrossRef]

Lee, M. W.

H. Ball, M. W. Lee, S. D. Gensemer, and M. J. Biercuk, “A high-power 626 nm diode laser system for Beryllium ion trapping,” Rev. Sci. Instrum.84(6), 063107 (2013).
[CrossRef] [PubMed]

Lin, H. Y.

H. Y. Lin, H. M. Tan, J. G. Miao, T. C. Cui, S. C. Su, and J. Guo, “Extra-cavity, widely tunable, continuous wave MgO-doped PPLN optical parametric oscillator pumped with a Nd:YVO4 laser,” Opt. Mater.32(1), 257–260 (2009).
[CrossRef]

Lu, B.

B. Pezeshki, M. Hagberg, B. Lu, M. Zelinski, S. Zou, and E. I. Kolev, “High power and diffraction-limited red lasers,” Proc. SPIE3947, 80–90 (2000).
[CrossRef]

Meekhof, D. M.

C. Monroe, D. M. Meekhof, B. E. King, S. R. Jefferts, W. M. Itano, D. J. Wineland, and P. Gould, “Resolved-Sideband Raman Cooling of a Bound Atom to the 3D Zero-Point Energy,” Phys. Rev. Lett.75(22), 4011–4014 (1995).
[CrossRef] [PubMed]

Meyer, J. R.

I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, “Band parameters for III–V compound semiconductors and their alloys,” J. Appl. Phys.89(11), 5815–5875 (2001).
[CrossRef]

Miao, J. G.

H. Y. Lin, H. M. Tan, J. G. Miao, T. C. Cui, S. C. Su, and J. Guo, “Extra-cavity, widely tunable, continuous wave MgO-doped PPLN optical parametric oscillator pumped with a Nd:YVO4 laser,” Opt. Mater.32(1), 257–260 (2009).
[CrossRef]

Miyashita, M.

T. Nishida, N. Shimada, T. Ogawa, M. Miyashita, and T. Yagi, “Short wavelength limitation in high power AlGaInP laser diodes,” Proc. SPIE7918, 791811 (2011).
[CrossRef]

Monroe, C.

C. Monroe, D. M. Meekhof, B. E. King, S. R. Jefferts, W. M. Itano, D. J. Wineland, and P. Gould, “Resolved-Sideband Raman Cooling of a Bound Atom to the 3D Zero-Point Energy,” Phys. Rev. Lett.75(22), 4011–4014 (1995).
[CrossRef] [PubMed]

Nishida, T.

T. Nishida, N. Shimada, T. Ogawa, M. Miyashita, and T. Yagi, “Short wavelength limitation in high power AlGaInP laser diodes,” Proc. SPIE7918, 791811 (2011).
[CrossRef]

Ogawa, T.

T. Nishida, N. Shimada, T. Ogawa, M. Miyashita, and T. Yagi, “Short wavelength limitation in high power AlGaInP laser diodes,” Proc. SPIE7918, 791811 (2011).
[CrossRef]

Okajima, M.

G. Hatakoshi, K. Itaya, M. Ishikawa, M. Okajima, and Y. Uematsu, “Short-wavelength InGaAlP visible laser-diodes,” IEEE J. Quantum Electron.27(6), 1476–1482 (1991).
[CrossRef]

Paschke, K.

Pezeshki, B.

B. Pezeshki, M. Hagberg, B. Lu, M. Zelinski, S. Zou, and E. I. Kolev, “High power and diffraction-limited red lasers,” Proc. SPIE3947, 80–90 (2000).
[CrossRef]

Piechal, B.

R. Bohdan, A. Bercha, W. Trzeciakowski, F. Dybała, B. Piechal, M. B. Sanayeh, M. Reufer, and P. Brick, “Room temperature 633 nm tapered diode lasers with external wavelength stabilization,” IET Optoelectron.3(6), 320–325 (2009).
[CrossRef]

R. Bohdan, A. Bercha, W. Trzeciakowski, F. Dybała, B. Piechal, M. B. Sanayeh, M. Reufer, and P. Brick, “Yellow AlGaInP/InGaP laser diodes achieved by pressure and temperature tuning,” J. Appl. Phys.104(6), 063105 (2008).
[CrossRef]

Pohl, J.

G. Blume, M. Schiemangk, J. Pohl, D. Feise, P. Ressel, B. Sumpf, A. Wicht, and K. Paschke, “Narrow Linewidth of 633-nm DBR Ridge-Waveguide Lasers,” IEEE Photon. Technol. Lett.25(6), 550–552 (2013).
[CrossRef]

Proffitt, W.

Ram-Mohan, L. R.

I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, “Band parameters for III–V compound semiconductors and their alloys,” J. Appl. Phys.89(11), 5815–5875 (2001).
[CrossRef]

Ressel, P.

G. Blume, M. Schiemangk, J. Pohl, D. Feise, P. Ressel, B. Sumpf, A. Wicht, and K. Paschke, “Narrow Linewidth of 633-nm DBR Ridge-Waveguide Lasers,” IEEE Photon. Technol. Lett.25(6), 550–552 (2013).
[CrossRef]

J. Fricke, W. John, A. Klehr, P. Ressel, L. Weixelbaum, H. Wenzel, and G. Erbert, “Properties and fabrication of high-order Bragg gratings for wavelength stabilization of diode lasers,” Semicond. Sci. Technol.27(5), 055009 (2012).
[CrossRef]

Reufer, M.

R. Bohdan, A. Bercha, W. Trzeciakowski, F. Dybała, B. Piechal, M. B. Sanayeh, M. Reufer, and P. Brick, “Room temperature 633 nm tapered diode lasers with external wavelength stabilization,” IET Optoelectron.3(6), 320–325 (2009).
[CrossRef]

R. Bohdan, A. Bercha, W. Trzeciakowski, F. Dybała, B. Piechal, M. B. Sanayeh, M. Reufer, and P. Brick, “Yellow AlGaInP/InGaP laser diodes achieved by pressure and temperature tuning,” J. Appl. Phys.104(6), 063105 (2008).
[CrossRef]

Sanayeh, M. B.

R. Bohdan, A. Bercha, W. Trzeciakowski, F. Dybała, B. Piechal, M. B. Sanayeh, M. Reufer, and P. Brick, “Room temperature 633 nm tapered diode lasers with external wavelength stabilization,” IET Optoelectron.3(6), 320–325 (2009).
[CrossRef]

R. Bohdan, A. Bercha, W. Trzeciakowski, F. Dybała, B. Piechal, M. B. Sanayeh, M. Reufer, and P. Brick, “Yellow AlGaInP/InGaP laser diodes achieved by pressure and temperature tuning,” J. Appl. Phys.104(6), 063105 (2008).
[CrossRef]

Schiemangk, M.

G. Blume, M. Schiemangk, J. Pohl, D. Feise, P. Ressel, B. Sumpf, A. Wicht, and K. Paschke, “Narrow Linewidth of 633-nm DBR Ridge-Waveguide Lasers,” IEEE Photon. Technol. Lett.25(6), 550–552 (2013).
[CrossRef]

Scholz, F.

F. Barth, H.-P. Gauggel, C. Geng, F. Scholz, J. Hommel, R. Winterhoff, and H. Schweizer, “Fabrication and operation of first-order GaInP/AlGaInP DFB lasers at room temperature,” Electron. Lett.31(5), 367–368 (1995).
[CrossRef]

Schweizer, H.

F. Barth, H.-P. Gauggel, C. Geng, F. Scholz, J. Hommel, R. Winterhoff, and H. Schweizer, “Fabrication and operation of first-order GaInP/AlGaInP DFB lasers at room temperature,” Electron. Lett.31(5), 367–368 (1995).
[CrossRef]

Shimada, N.

T. Nishida, N. Shimada, T. Ogawa, M. Miyashita, and T. Yagi, “Short wavelength limitation in high power AlGaInP laser diodes,” Proc. SPIE7918, 791811 (2011).
[CrossRef]

Spießerger, S.

A. I. Bawamia, G. Blume, B. Eppich, A. Ginolas, S. Spießerger, M. Thomas, B. Sumpf, and G. Erbert, “Miniaturized tunable external cavity diode laser with single-mode operation and a narrow linewidth at 633 nm,” IEEE Photon. Technol. Lett.23(22), 1676–1678 (2011).
[CrossRef]

Su, S. C.

H. Y. Lin, H. M. Tan, J. G. Miao, T. C. Cui, S. C. Su, and J. Guo, “Extra-cavity, widely tunable, continuous wave MgO-doped PPLN optical parametric oscillator pumped with a Nd:YVO4 laser,” Opt. Mater.32(1), 257–260 (2009).
[CrossRef]

Sumpf, B.

G. Blume, M. Schiemangk, J. Pohl, D. Feise, P. Ressel, B. Sumpf, A. Wicht, and K. Paschke, “Narrow Linewidth of 633-nm DBR Ridge-Waveguide Lasers,” IEEE Photon. Technol. Lett.25(6), 550–552 (2013).
[CrossRef]

A. I. Bawamia, G. Blume, B. Eppich, A. Ginolas, S. Spießerger, M. Thomas, B. Sumpf, and G. Erbert, “Miniaturized tunable external cavity diode laser with single-mode operation and a narrow linewidth at 633 nm,” IEEE Photon. Technol. Lett.23(22), 1676–1678 (2011).
[CrossRef]

Tan, H. M.

H. Y. Lin, H. M. Tan, J. G. Miao, T. C. Cui, S. C. Su, and J. Guo, “Extra-cavity, widely tunable, continuous wave MgO-doped PPLN optical parametric oscillator pumped with a Nd:YVO4 laser,” Opt. Mater.32(1), 257–260 (2009).
[CrossRef]

Thomas, M.

A. I. Bawamia, G. Blume, B. Eppich, A. Ginolas, S. Spießerger, M. Thomas, B. Sumpf, and G. Erbert, “Miniaturized tunable external cavity diode laser with single-mode operation and a narrow linewidth at 633 nm,” IEEE Photon. Technol. Lett.23(22), 1676–1678 (2011).
[CrossRef]

Trzeciakowski, W.

R. Bohdan, A. Bercha, W. Trzeciakowski, F. Dybała, B. Piechal, M. B. Sanayeh, M. Reufer, and P. Brick, “Room temperature 633 nm tapered diode lasers with external wavelength stabilization,” IET Optoelectron.3(6), 320–325 (2009).
[CrossRef]

R. Bohdan, A. Bercha, W. Trzeciakowski, F. Dybała, B. Piechal, M. B. Sanayeh, M. Reufer, and P. Brick, “Yellow AlGaInP/InGaP laser diodes achieved by pressure and temperature tuning,” J. Appl. Phys.104(6), 063105 (2008).
[CrossRef]

Ubachs, W.

Uematsu, Y.

G. Hatakoshi, K. Itaya, M. Ishikawa, M. Okajima, and Y. Uematsu, “Short-wavelength InGaAlP visible laser-diodes,” IEEE J. Quantum Electron.27(6), 1476–1482 (1991).
[CrossRef]

Vurgaftman, I.

I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, “Band parameters for III–V compound semiconductors and their alloys,” J. Appl. Phys.89(11), 5815–5875 (2001).
[CrossRef]

Weixelbaum, L.

J. Fricke, W. John, A. Klehr, P. Ressel, L. Weixelbaum, H. Wenzel, and G. Erbert, “Properties and fabrication of high-order Bragg gratings for wavelength stabilization of diode lasers,” Semicond. Sci. Technol.27(5), 055009 (2012).
[CrossRef]

Wenzel, H.

J. Fricke, W. John, A. Klehr, P. Ressel, L. Weixelbaum, H. Wenzel, and G. Erbert, “Properties and fabrication of high-order Bragg gratings for wavelength stabilization of diode lasers,” Semicond. Sci. Technol.27(5), 055009 (2012).
[CrossRef]

Weyers, M.

C. Kaspari, M. Zorn, M. Weyers, and G. Erbert, “Growth parameter optimization of the GaInP/AlGaInP active zone of 635nm red laser diodes,” J. Cryst. Growth310(23), 5175–5177 (2008).
[CrossRef]

Wicht, A.

F. M. J. Cozijn, J. Biesheuvel, A. S. Flores, W. Ubachs, G. Blume, A. Wicht, K. Paschke, G. Erbert, and J. C. J. Koelemeij, “Laser cooling of beryllium ions using a frequency-doubled 626 nm diode laser,” Opt. Lett.38(13), 2370–2372 (2013).
[CrossRef] [PubMed]

G. Blume, M. Schiemangk, J. Pohl, D. Feise, P. Ressel, B. Sumpf, A. Wicht, and K. Paschke, “Narrow Linewidth of 633-nm DBR Ridge-Waveguide Lasers,” IEEE Photon. Technol. Lett.25(6), 550–552 (2013).
[CrossRef]

Wineland, D. J.

C. Monroe, D. M. Meekhof, B. E. King, S. R. Jefferts, W. M. Itano, D. J. Wineland, and P. Gould, “Resolved-Sideband Raman Cooling of a Bound Atom to the 3D Zero-Point Energy,” Phys. Rev. Lett.75(22), 4011–4014 (1995).
[CrossRef] [PubMed]

Winterhoff, R.

F. Barth, H.-P. Gauggel, C. Geng, F. Scholz, J. Hommel, R. Winterhoff, and H. Schweizer, “Fabrication and operation of first-order GaInP/AlGaInP DFB lasers at room temperature,” Electron. Lett.31(5), 367–368 (1995).
[CrossRef]

Yagi, T.

T. Nishida, N. Shimada, T. Ogawa, M. Miyashita, and T. Yagi, “Short wavelength limitation in high power AlGaInP laser diodes,” Proc. SPIE7918, 791811 (2011).
[CrossRef]

Zelinski, M.

B. Pezeshki, M. Hagberg, B. Lu, M. Zelinski, S. Zou, and E. I. Kolev, “High power and diffraction-limited red lasers,” Proc. SPIE3947, 80–90 (2000).
[CrossRef]

Zorn, M.

C. Kaspari, M. Zorn, M. Weyers, and G. Erbert, “Growth parameter optimization of the GaInP/AlGaInP active zone of 635nm red laser diodes,” J. Cryst. Growth310(23), 5175–5177 (2008).
[CrossRef]

Zou, S.

B. Pezeshki, M. Hagberg, B. Lu, M. Zelinski, S. Zou, and E. I. Kolev, “High power and diffraction-limited red lasers,” Proc. SPIE3947, 80–90 (2000).
[CrossRef]

Appl. Opt. (1)

Electron. Lett. (1)

F. Barth, H.-P. Gauggel, C. Geng, F. Scholz, J. Hommel, R. Winterhoff, and H. Schweizer, “Fabrication and operation of first-order GaInP/AlGaInP DFB lasers at room temperature,” Electron. Lett.31(5), 367–368 (1995).
[CrossRef]

IEEE J. Quantum Electron. (1)

G. Hatakoshi, K. Itaya, M. Ishikawa, M. Okajima, and Y. Uematsu, “Short-wavelength InGaAlP visible laser-diodes,” IEEE J. Quantum Electron.27(6), 1476–1482 (1991).
[CrossRef]

IEEE Photon. Technol. Lett. (2)

A. I. Bawamia, G. Blume, B. Eppich, A. Ginolas, S. Spießerger, M. Thomas, B. Sumpf, and G. Erbert, “Miniaturized tunable external cavity diode laser with single-mode operation and a narrow linewidth at 633 nm,” IEEE Photon. Technol. Lett.23(22), 1676–1678 (2011).
[CrossRef]

G. Blume, M. Schiemangk, J. Pohl, D. Feise, P. Ressel, B. Sumpf, A. Wicht, and K. Paschke, “Narrow Linewidth of 633-nm DBR Ridge-Waveguide Lasers,” IEEE Photon. Technol. Lett.25(6), 550–552 (2013).
[CrossRef]

IET Optoelectron. (1)

R. Bohdan, A. Bercha, W. Trzeciakowski, F. Dybała, B. Piechal, M. B. Sanayeh, M. Reufer, and P. Brick, “Room temperature 633 nm tapered diode lasers with external wavelength stabilization,” IET Optoelectron.3(6), 320–325 (2009).
[CrossRef]

J. Appl. Phys. (2)

R. Bohdan, A. Bercha, W. Trzeciakowski, F. Dybała, B. Piechal, M. B. Sanayeh, M. Reufer, and P. Brick, “Yellow AlGaInP/InGaP laser diodes achieved by pressure and temperature tuning,” J. Appl. Phys.104(6), 063105 (2008).
[CrossRef]

I. Vurgaftman, J. R. Meyer, and L. R. Ram-Mohan, “Band parameters for III–V compound semiconductors and their alloys,” J. Appl. Phys.89(11), 5815–5875 (2001).
[CrossRef]

J. Cryst. Growth (1)

C. Kaspari, M. Zorn, M. Weyers, and G. Erbert, “Growth parameter optimization of the GaInP/AlGaInP active zone of 635nm red laser diodes,” J. Cryst. Growth310(23), 5175–5177 (2008).
[CrossRef]

Opt. Express (1)

Opt. Lett. (2)

Opt. Mater. (1)

H. Y. Lin, H. M. Tan, J. G. Miao, T. C. Cui, S. C. Su, and J. Guo, “Extra-cavity, widely tunable, continuous wave MgO-doped PPLN optical parametric oscillator pumped with a Nd:YVO4 laser,” Opt. Mater.32(1), 257–260 (2009).
[CrossRef]

Opt. Quantum Electron. (1)

P. Bienstman and R. Baets, “Optical modelling of photonic crystals and VCSELs using eigenmode expansion and perfectly matched layers,” Opt. Quantum Electron.33(4/5), 327–341 (2001).
[CrossRef]

Phys. Rev. Lett. (1)

C. Monroe, D. M. Meekhof, B. E. King, S. R. Jefferts, W. M. Itano, D. J. Wineland, and P. Gould, “Resolved-Sideband Raman Cooling of a Bound Atom to the 3D Zero-Point Energy,” Phys. Rev. Lett.75(22), 4011–4014 (1995).
[CrossRef] [PubMed]

Proc. SPIE (2)

T. Nishida, N. Shimada, T. Ogawa, M. Miyashita, and T. Yagi, “Short wavelength limitation in high power AlGaInP laser diodes,” Proc. SPIE7918, 791811 (2011).
[CrossRef]

B. Pezeshki, M. Hagberg, B. Lu, M. Zelinski, S. Zou, and E. I. Kolev, “High power and diffraction-limited red lasers,” Proc. SPIE3947, 80–90 (2000).
[CrossRef]

Rev. Sci. Instrum. (1)

H. Ball, M. W. Lee, S. D. Gensemer, and M. J. Biercuk, “A high-power 626 nm diode laser system for Beryllium ion trapping,” Rev. Sci. Instrum.84(6), 063107 (2013).
[CrossRef] [PubMed]

Semicond. Sci. Technol. (1)

J. Fricke, W. John, A. Klehr, P. Ressel, L. Weixelbaum, H. Wenzel, and G. Erbert, “Properties and fabrication of high-order Bragg gratings for wavelength stabilization of diode lasers,” Semicond. Sci. Technol.27(5), 055009 (2012).
[CrossRef]

Other (2)

V. Zhelyazkova, A. Cournol, T. E. Wall, A. Matsushima, J. J. Hudson, E. A. Hinds, M. R. Tarbutt, and B. E. Sauer, “Laser cooling and slowing of CaF molecules,” arXiv (2013). http://arxiv.org/pdf/1308.0421.pdf

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Figures (8)

Fig. 1
Fig. 1

Graph of the emission wavelength as a function of the grating period at a temperature of 15°C. The inset shows a schematic drawing of the DBR-RWL.

Fig. 2
Fig. 2

Laser in TO-3 package with a 1-eurocent-coin for size comparison. The inset shows a SEM image of the integrated 10th order surface grating.

Fig. 3
Fig. 3

Amplified spontaneous emission from the front facet measured below threshold at temperatures of + 25°C and −25°C.

Fig. 4
Fig. 4

Voltage-current- and power-current-characteristics of a DBR-RWL for various temperatures inside of a TO-3 package.

Fig. 5
Fig. 5

Spectra of DBR-RWL at different temperatures at maximum currents of 120 mA ( + 15°C to ± 0°C), and maximum power of 50 mW (−5°C to −30°C).

Fig. 6
Fig. 6

Spectral center positions as a function of temperature of the amplified spontaneous emission (red dots) and the lasing emission (black squares).

Fig. 7
Fig. 7

Beat signal (black curve) of two DBR-RWL at 0°C and 120 mA emitting each about 50 mW locked to a fixed distance of about 54 MHz and fitted with a Lorentzian (red curve).

Fig. 8
Fig. 8

Horizontal intensity profiles (slow axis) of the near and far fields of a DBR-RWL at a temperature of 0°C and a current of 135mA, where the laser emitted an output power of 50mW.

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