Abstract

Ultrasmall InGaAs photodetectors based on a photonic crystal waveguide with a buried heterostructure (BH) were demonstrated for the first time. A sufficiently high DC responsivity of ~1 A/W was achieved for the 3.4-μm-long detector. The dynamic response revealed a 3-dB bandwidth of 6 GHz and a 10-Gb/s eye pattern. These results were thanks to the strong confinement of both photons and carriers in a small BH and will pave the way for unprecedented nano-photodetectors with a high quantum efficiency and small capacitance. Our device potentially has an ultrasmall junction capacitance of much less than 1 fF and may enable us to eliminate electrical amplifiers for future optical receivers and subsequent ultralow-power optical links on a chip.

© 2013 OSA

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. M. Notomi, A. Shinya, K. Nozaki, T. Tanabe, S. Matsuo, E. Kuramochi, T. Sato, H. Taniyama, and H. Sumikura, “Low-power nanophotonic devices based on photonic crystals towards dense photonic network on chip,” IET Circuits Devices Syst.5(2), 84–93 (2011).
    [CrossRef]
  2. C. T. DeRose, D. C. Trotter, W. A. Zortman, A. L. Starbuck, M. Fisher, M. R. Watts, and P. S. Davids, “Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current,” Opt. Express19(25), 24897–24904 (2011).
    [CrossRef] [PubMed]
  3. S. Assefa, F. N. Xia, W. M. J. Green, C. L. Schow, A. V. Rylyakov, and Y. A. Vlasov, “CMOS-Integrated Optical Receivers for On-Chip Interconnects,” IEEE J. Sel. Top. Quantum Electron.16(5), 1376–1385 (2010).
    [CrossRef]
  4. L. Chen, K. Preston, S. Manipatruni, and M. Lipson, “Integrated GHz silicon photonic interconnect with micrometer-scale modulators and detectors,” Opt. Express17(17), 15248–15256 (2009).
    [CrossRef] [PubMed]
  5. S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, and T. Kakitsuka, “Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser,” Opt. Express20(4), 3773–3780 (2012).
    [CrossRef] [PubMed]
  6. D. A. B. Miller, “Device requirements for optical interconnects to silicon chips,” Proc. IEEE97(7), 1166–1185 (2009).
    [CrossRef]
  7. K. Takeda, T. Sato, A. Shinya, K. Nozaki, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Integrated on-chip optical links using photonic-crystal lasers and photodetectors with current blocking trenches” OFC/NFOEC, Anaheim, OM2J.5 (2013)
    [CrossRef]
  8. L. Tang, S. E. Kocabas, S. Latif, A. K. Okyay, D. S. Ly-Gagnon, K. C. Saraswat, and D. A. B. Miller, “Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna,” Nat. Photonics2(4), 226–229 (2008).
    [CrossRef]
  9. A. Karar, N. Das, C. L. Tan, K. Alameh, Y. T. Lee, and F. Karouta, “High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors,” Appl. Phys. Lett.99(13), 133112 (2011).
    [CrossRef]
  10. T. Tanabe, H. Sumikura, H. Taniyama, A. Shinya, and M. Notomi, “All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip,” Appl. Phys. Lett.96(10), 101103 (2010).
    [CrossRef]
  11. S. Matsuo, A. Shinya, T. Kakitsuka, K. Nozaki, T. Segawa, T. Sato, Y. Kawaguchi, and M. Notomi, “High-speed ultracompact buried heterostructure photonic-crystal laser with 13 fJ of energy consumed per bit transmitted,” Nat. Photonics4(9), 648–654 (2010).
    [CrossRef]
  12. K. Takeda, T. Sato, A. Shinya, K. Nozaki, W. Kobayashi, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers,” Nat. Photonics7(7), 569–575 (2013).
    [CrossRef]
  13. K. Nozaki, A. Shinya, S. Matsuo, Y. Suzaki, T. Segawa, T. Sato, Y. Kawaguchi, R. Takahashi, and M. Notomi, “Ultralow-power all-optical RAM based on nanocavities,” Nat. Photonics6(4), 248–252 (2012).
    [CrossRef]
  14. K. Nozaki, T. Tanabe, A. Shinya, S. Matsuo, T. Sato, H. Taniyama, and M. Notomi, “Sub-femtojoule all-optical switching using a photonic-crystal nanocavity,” Nat. Photonics4(7), 477–483 (2010).
    [CrossRef]
  15. Z. Sheng, L. Liu, J. Brouckaert, S. L. He, and D. Van Thourhout, “InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides,” Opt. Express18(2), 1756–1761 (2010).
    [CrossRef] [PubMed]
  16. H. Yang, C. L. L. M. Daunt, F. Gity, K. H. Lee, W. Han, B. Corbett, and F. H. Peters, “Zero-Bias High-Speed Edge-Coupled Unitraveling-Carrier InGaAs Photodiode,” IEEE Photon. Technol. Lett.22(23), 1747–1749 (2010).
    [CrossRef]
  17. S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, and T. Kakitsuka, “10-Gbit/s direct modulation of electrically driven photonic crystal nanocavity laser”in Proceedings of National Fiber Optic Engineers Conference, Los Angeles, CA, March 4-8, 2012, PDP5A.
  18. S. Adachi, “Optical Dispersion Relations for GaP, GaAs, GaSb, InP, InAs, InSb, AlxGa1-xAs, and In1-xGaxAsyP1-y,” J. Appl. Phys.66(12), 6030–6040 (1989).
    [CrossRef]
  19. K. Kishino, M. S. Unlu, J. I. Chyi, J. Reed, L. Arsenault, and H. Morkoc, “Resonant cavity-enhanced (RCE) photodetectors,” IEEE J. Quantum Electron.27(8), 2025–2034 (1991).
    [CrossRef]

2013

K. Takeda, T. Sato, A. Shinya, K. Nozaki, W. Kobayashi, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers,” Nat. Photonics7(7), 569–575 (2013).
[CrossRef]

2012

2011

C. T. DeRose, D. C. Trotter, W. A. Zortman, A. L. Starbuck, M. Fisher, M. R. Watts, and P. S. Davids, “Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current,” Opt. Express19(25), 24897–24904 (2011).
[CrossRef] [PubMed]

A. Karar, N. Das, C. L. Tan, K. Alameh, Y. T. Lee, and F. Karouta, “High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors,” Appl. Phys. Lett.99(13), 133112 (2011).
[CrossRef]

M. Notomi, A. Shinya, K. Nozaki, T. Tanabe, S. Matsuo, E. Kuramochi, T. Sato, H. Taniyama, and H. Sumikura, “Low-power nanophotonic devices based on photonic crystals towards dense photonic network on chip,” IET Circuits Devices Syst.5(2), 84–93 (2011).
[CrossRef]

2010

S. Assefa, F. N. Xia, W. M. J. Green, C. L. Schow, A. V. Rylyakov, and Y. A. Vlasov, “CMOS-Integrated Optical Receivers for On-Chip Interconnects,” IEEE J. Sel. Top. Quantum Electron.16(5), 1376–1385 (2010).
[CrossRef]

H. Yang, C. L. L. M. Daunt, F. Gity, K. H. Lee, W. Han, B. Corbett, and F. H. Peters, “Zero-Bias High-Speed Edge-Coupled Unitraveling-Carrier InGaAs Photodiode,” IEEE Photon. Technol. Lett.22(23), 1747–1749 (2010).
[CrossRef]

T. Tanabe, H. Sumikura, H. Taniyama, A. Shinya, and M. Notomi, “All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip,” Appl. Phys. Lett.96(10), 101103 (2010).
[CrossRef]

S. Matsuo, A. Shinya, T. Kakitsuka, K. Nozaki, T. Segawa, T. Sato, Y. Kawaguchi, and M. Notomi, “High-speed ultracompact buried heterostructure photonic-crystal laser with 13 fJ of energy consumed per bit transmitted,” Nat. Photonics4(9), 648–654 (2010).
[CrossRef]

Z. Sheng, L. Liu, J. Brouckaert, S. L. He, and D. Van Thourhout, “InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides,” Opt. Express18(2), 1756–1761 (2010).
[CrossRef] [PubMed]

K. Nozaki, T. Tanabe, A. Shinya, S. Matsuo, T. Sato, H. Taniyama, and M. Notomi, “Sub-femtojoule all-optical switching using a photonic-crystal nanocavity,” Nat. Photonics4(7), 477–483 (2010).
[CrossRef]

2009

2008

L. Tang, S. E. Kocabas, S. Latif, A. K. Okyay, D. S. Ly-Gagnon, K. C. Saraswat, and D. A. B. Miller, “Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna,” Nat. Photonics2(4), 226–229 (2008).
[CrossRef]

1991

K. Kishino, M. S. Unlu, J. I. Chyi, J. Reed, L. Arsenault, and H. Morkoc, “Resonant cavity-enhanced (RCE) photodetectors,” IEEE J. Quantum Electron.27(8), 2025–2034 (1991).
[CrossRef]

1989

S. Adachi, “Optical Dispersion Relations for GaP, GaAs, GaSb, InP, InAs, InSb, AlxGa1-xAs, and In1-xGaxAsyP1-y,” J. Appl. Phys.66(12), 6030–6040 (1989).
[CrossRef]

Adachi, S.

S. Adachi, “Optical Dispersion Relations for GaP, GaAs, GaSb, InP, InAs, InSb, AlxGa1-xAs, and In1-xGaxAsyP1-y,” J. Appl. Phys.66(12), 6030–6040 (1989).
[CrossRef]

Alameh, K.

A. Karar, N. Das, C. L. Tan, K. Alameh, Y. T. Lee, and F. Karouta, “High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors,” Appl. Phys. Lett.99(13), 133112 (2011).
[CrossRef]

Arsenault, L.

K. Kishino, M. S. Unlu, J. I. Chyi, J. Reed, L. Arsenault, and H. Morkoc, “Resonant cavity-enhanced (RCE) photodetectors,” IEEE J. Quantum Electron.27(8), 2025–2034 (1991).
[CrossRef]

Assefa, S.

S. Assefa, F. N. Xia, W. M. J. Green, C. L. Schow, A. V. Rylyakov, and Y. A. Vlasov, “CMOS-Integrated Optical Receivers for On-Chip Interconnects,” IEEE J. Sel. Top. Quantum Electron.16(5), 1376–1385 (2010).
[CrossRef]

Brouckaert, J.

Chen, L.

Chyi, J. I.

K. Kishino, M. S. Unlu, J. I. Chyi, J. Reed, L. Arsenault, and H. Morkoc, “Resonant cavity-enhanced (RCE) photodetectors,” IEEE J. Quantum Electron.27(8), 2025–2034 (1991).
[CrossRef]

Corbett, B.

H. Yang, C. L. L. M. Daunt, F. Gity, K. H. Lee, W. Han, B. Corbett, and F. H. Peters, “Zero-Bias High-Speed Edge-Coupled Unitraveling-Carrier InGaAs Photodiode,” IEEE Photon. Technol. Lett.22(23), 1747–1749 (2010).
[CrossRef]

Das, N.

A. Karar, N. Das, C. L. Tan, K. Alameh, Y. T. Lee, and F. Karouta, “High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors,” Appl. Phys. Lett.99(13), 133112 (2011).
[CrossRef]

Daunt, C. L. L. M.

H. Yang, C. L. L. M. Daunt, F. Gity, K. H. Lee, W. Han, B. Corbett, and F. H. Peters, “Zero-Bias High-Speed Edge-Coupled Unitraveling-Carrier InGaAs Photodiode,” IEEE Photon. Technol. Lett.22(23), 1747–1749 (2010).
[CrossRef]

Davids, P. S.

DeRose, C. T.

Fisher, M.

Gity, F.

H. Yang, C. L. L. M. Daunt, F. Gity, K. H. Lee, W. Han, B. Corbett, and F. H. Peters, “Zero-Bias High-Speed Edge-Coupled Unitraveling-Carrier InGaAs Photodiode,” IEEE Photon. Technol. Lett.22(23), 1747–1749 (2010).
[CrossRef]

Green, W. M. J.

S. Assefa, F. N. Xia, W. M. J. Green, C. L. Schow, A. V. Rylyakov, and Y. A. Vlasov, “CMOS-Integrated Optical Receivers for On-Chip Interconnects,” IEEE J. Sel. Top. Quantum Electron.16(5), 1376–1385 (2010).
[CrossRef]

Han, W.

H. Yang, C. L. L. M. Daunt, F. Gity, K. H. Lee, W. Han, B. Corbett, and F. H. Peters, “Zero-Bias High-Speed Edge-Coupled Unitraveling-Carrier InGaAs Photodiode,” IEEE Photon. Technol. Lett.22(23), 1747–1749 (2010).
[CrossRef]

Hasebe, K.

K. Takeda, T. Sato, A. Shinya, K. Nozaki, W. Kobayashi, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers,” Nat. Photonics7(7), 569–575 (2013).
[CrossRef]

S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, and T. Kakitsuka, “Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser,” Opt. Express20(4), 3773–3780 (2012).
[CrossRef] [PubMed]

S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, and T. Kakitsuka, “10-Gbit/s direct modulation of electrically driven photonic crystal nanocavity laser”in Proceedings of National Fiber Optic Engineers Conference, Los Angeles, CA, March 4-8, 2012, PDP5A.

He, S. L.

Kakitsuka, T.

K. Takeda, T. Sato, A. Shinya, K. Nozaki, W. Kobayashi, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers,” Nat. Photonics7(7), 569–575 (2013).
[CrossRef]

S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, and T. Kakitsuka, “Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser,” Opt. Express20(4), 3773–3780 (2012).
[CrossRef] [PubMed]

S. Matsuo, A. Shinya, T. Kakitsuka, K. Nozaki, T. Segawa, T. Sato, Y. Kawaguchi, and M. Notomi, “High-speed ultracompact buried heterostructure photonic-crystal laser with 13 fJ of energy consumed per bit transmitted,” Nat. Photonics4(9), 648–654 (2010).
[CrossRef]

S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, and T. Kakitsuka, “10-Gbit/s direct modulation of electrically driven photonic crystal nanocavity laser”in Proceedings of National Fiber Optic Engineers Conference, Los Angeles, CA, March 4-8, 2012, PDP5A.

Karar, A.

A. Karar, N. Das, C. L. Tan, K. Alameh, Y. T. Lee, and F. Karouta, “High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors,” Appl. Phys. Lett.99(13), 133112 (2011).
[CrossRef]

Karouta, F.

A. Karar, N. Das, C. L. Tan, K. Alameh, Y. T. Lee, and F. Karouta, “High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors,” Appl. Phys. Lett.99(13), 133112 (2011).
[CrossRef]

Kawaguchi, Y.

K. Nozaki, A. Shinya, S. Matsuo, Y. Suzaki, T. Segawa, T. Sato, Y. Kawaguchi, R. Takahashi, and M. Notomi, “Ultralow-power all-optical RAM based on nanocavities,” Nat. Photonics6(4), 248–252 (2012).
[CrossRef]

S. Matsuo, A. Shinya, T. Kakitsuka, K. Nozaki, T. Segawa, T. Sato, Y. Kawaguchi, and M. Notomi, “High-speed ultracompact buried heterostructure photonic-crystal laser with 13 fJ of energy consumed per bit transmitted,” Nat. Photonics4(9), 648–654 (2010).
[CrossRef]

Kishino, K.

K. Kishino, M. S. Unlu, J. I. Chyi, J. Reed, L. Arsenault, and H. Morkoc, “Resonant cavity-enhanced (RCE) photodetectors,” IEEE J. Quantum Electron.27(8), 2025–2034 (1991).
[CrossRef]

Kobayashi, W.

K. Takeda, T. Sato, A. Shinya, K. Nozaki, W. Kobayashi, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers,” Nat. Photonics7(7), 569–575 (2013).
[CrossRef]

Kocabas, S. E.

L. Tang, S. E. Kocabas, S. Latif, A. K. Okyay, D. S. Ly-Gagnon, K. C. Saraswat, and D. A. B. Miller, “Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna,” Nat. Photonics2(4), 226–229 (2008).
[CrossRef]

Kuramochi, E.

M. Notomi, A. Shinya, K. Nozaki, T. Tanabe, S. Matsuo, E. Kuramochi, T. Sato, H. Taniyama, and H. Sumikura, “Low-power nanophotonic devices based on photonic crystals towards dense photonic network on chip,” IET Circuits Devices Syst.5(2), 84–93 (2011).
[CrossRef]

Latif, S.

L. Tang, S. E. Kocabas, S. Latif, A. K. Okyay, D. S. Ly-Gagnon, K. C. Saraswat, and D. A. B. Miller, “Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna,” Nat. Photonics2(4), 226–229 (2008).
[CrossRef]

Lee, K. H.

H. Yang, C. L. L. M. Daunt, F. Gity, K. H. Lee, W. Han, B. Corbett, and F. H. Peters, “Zero-Bias High-Speed Edge-Coupled Unitraveling-Carrier InGaAs Photodiode,” IEEE Photon. Technol. Lett.22(23), 1747–1749 (2010).
[CrossRef]

Lee, Y. T.

A. Karar, N. Das, C. L. Tan, K. Alameh, Y. T. Lee, and F. Karouta, “High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors,” Appl. Phys. Lett.99(13), 133112 (2011).
[CrossRef]

Lipson, M.

Liu, L.

Ly-Gagnon, D. S.

L. Tang, S. E. Kocabas, S. Latif, A. K. Okyay, D. S. Ly-Gagnon, K. C. Saraswat, and D. A. B. Miller, “Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna,” Nat. Photonics2(4), 226–229 (2008).
[CrossRef]

Manipatruni, S.

Matsuo, S.

K. Takeda, T. Sato, A. Shinya, K. Nozaki, W. Kobayashi, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers,” Nat. Photonics7(7), 569–575 (2013).
[CrossRef]

S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, and T. Kakitsuka, “Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser,” Opt. Express20(4), 3773–3780 (2012).
[CrossRef] [PubMed]

K. Nozaki, A. Shinya, S. Matsuo, Y. Suzaki, T. Segawa, T. Sato, Y. Kawaguchi, R. Takahashi, and M. Notomi, “Ultralow-power all-optical RAM based on nanocavities,” Nat. Photonics6(4), 248–252 (2012).
[CrossRef]

M. Notomi, A. Shinya, K. Nozaki, T. Tanabe, S. Matsuo, E. Kuramochi, T. Sato, H. Taniyama, and H. Sumikura, “Low-power nanophotonic devices based on photonic crystals towards dense photonic network on chip,” IET Circuits Devices Syst.5(2), 84–93 (2011).
[CrossRef]

S. Matsuo, A. Shinya, T. Kakitsuka, K. Nozaki, T. Segawa, T. Sato, Y. Kawaguchi, and M. Notomi, “High-speed ultracompact buried heterostructure photonic-crystal laser with 13 fJ of energy consumed per bit transmitted,” Nat. Photonics4(9), 648–654 (2010).
[CrossRef]

K. Nozaki, T. Tanabe, A. Shinya, S. Matsuo, T. Sato, H. Taniyama, and M. Notomi, “Sub-femtojoule all-optical switching using a photonic-crystal nanocavity,” Nat. Photonics4(7), 477–483 (2010).
[CrossRef]

S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, and T. Kakitsuka, “10-Gbit/s direct modulation of electrically driven photonic crystal nanocavity laser”in Proceedings of National Fiber Optic Engineers Conference, Los Angeles, CA, March 4-8, 2012, PDP5A.

Miller, D. A. B.

D. A. B. Miller, “Device requirements for optical interconnects to silicon chips,” Proc. IEEE97(7), 1166–1185 (2009).
[CrossRef]

L. Tang, S. E. Kocabas, S. Latif, A. K. Okyay, D. S. Ly-Gagnon, K. C. Saraswat, and D. A. B. Miller, “Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna,” Nat. Photonics2(4), 226–229 (2008).
[CrossRef]

Morkoc, H.

K. Kishino, M. S. Unlu, J. I. Chyi, J. Reed, L. Arsenault, and H. Morkoc, “Resonant cavity-enhanced (RCE) photodetectors,” IEEE J. Quantum Electron.27(8), 2025–2034 (1991).
[CrossRef]

Notomi, M.

K. Takeda, T. Sato, A. Shinya, K. Nozaki, W. Kobayashi, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers,” Nat. Photonics7(7), 569–575 (2013).
[CrossRef]

S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, and T. Kakitsuka, “Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser,” Opt. Express20(4), 3773–3780 (2012).
[CrossRef] [PubMed]

K. Nozaki, A. Shinya, S. Matsuo, Y. Suzaki, T. Segawa, T. Sato, Y. Kawaguchi, R. Takahashi, and M. Notomi, “Ultralow-power all-optical RAM based on nanocavities,” Nat. Photonics6(4), 248–252 (2012).
[CrossRef]

M. Notomi, A. Shinya, K. Nozaki, T. Tanabe, S. Matsuo, E. Kuramochi, T. Sato, H. Taniyama, and H. Sumikura, “Low-power nanophotonic devices based on photonic crystals towards dense photonic network on chip,” IET Circuits Devices Syst.5(2), 84–93 (2011).
[CrossRef]

S. Matsuo, A. Shinya, T. Kakitsuka, K. Nozaki, T. Segawa, T. Sato, Y. Kawaguchi, and M. Notomi, “High-speed ultracompact buried heterostructure photonic-crystal laser with 13 fJ of energy consumed per bit transmitted,” Nat. Photonics4(9), 648–654 (2010).
[CrossRef]

K. Nozaki, T. Tanabe, A. Shinya, S. Matsuo, T. Sato, H. Taniyama, and M. Notomi, “Sub-femtojoule all-optical switching using a photonic-crystal nanocavity,” Nat. Photonics4(7), 477–483 (2010).
[CrossRef]

T. Tanabe, H. Sumikura, H. Taniyama, A. Shinya, and M. Notomi, “All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip,” Appl. Phys. Lett.96(10), 101103 (2010).
[CrossRef]

S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, and T. Kakitsuka, “10-Gbit/s direct modulation of electrically driven photonic crystal nanocavity laser”in Proceedings of National Fiber Optic Engineers Conference, Los Angeles, CA, March 4-8, 2012, PDP5A.

Nozaki, K.

K. Takeda, T. Sato, A. Shinya, K. Nozaki, W. Kobayashi, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers,” Nat. Photonics7(7), 569–575 (2013).
[CrossRef]

S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, and T. Kakitsuka, “Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser,” Opt. Express20(4), 3773–3780 (2012).
[CrossRef] [PubMed]

K. Nozaki, A. Shinya, S. Matsuo, Y. Suzaki, T. Segawa, T. Sato, Y. Kawaguchi, R. Takahashi, and M. Notomi, “Ultralow-power all-optical RAM based on nanocavities,” Nat. Photonics6(4), 248–252 (2012).
[CrossRef]

M. Notomi, A. Shinya, K. Nozaki, T. Tanabe, S. Matsuo, E. Kuramochi, T. Sato, H. Taniyama, and H. Sumikura, “Low-power nanophotonic devices based on photonic crystals towards dense photonic network on chip,” IET Circuits Devices Syst.5(2), 84–93 (2011).
[CrossRef]

S. Matsuo, A. Shinya, T. Kakitsuka, K. Nozaki, T. Segawa, T. Sato, Y. Kawaguchi, and M. Notomi, “High-speed ultracompact buried heterostructure photonic-crystal laser with 13 fJ of energy consumed per bit transmitted,” Nat. Photonics4(9), 648–654 (2010).
[CrossRef]

K. Nozaki, T. Tanabe, A. Shinya, S. Matsuo, T. Sato, H. Taniyama, and M. Notomi, “Sub-femtojoule all-optical switching using a photonic-crystal nanocavity,” Nat. Photonics4(7), 477–483 (2010).
[CrossRef]

S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, and T. Kakitsuka, “10-Gbit/s direct modulation of electrically driven photonic crystal nanocavity laser”in Proceedings of National Fiber Optic Engineers Conference, Los Angeles, CA, March 4-8, 2012, PDP5A.

Okyay, A. K.

L. Tang, S. E. Kocabas, S. Latif, A. K. Okyay, D. S. Ly-Gagnon, K. C. Saraswat, and D. A. B. Miller, “Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna,” Nat. Photonics2(4), 226–229 (2008).
[CrossRef]

Peters, F. H.

H. Yang, C. L. L. M. Daunt, F. Gity, K. H. Lee, W. Han, B. Corbett, and F. H. Peters, “Zero-Bias High-Speed Edge-Coupled Unitraveling-Carrier InGaAs Photodiode,” IEEE Photon. Technol. Lett.22(23), 1747–1749 (2010).
[CrossRef]

Preston, K.

Reed, J.

K. Kishino, M. S. Unlu, J. I. Chyi, J. Reed, L. Arsenault, and H. Morkoc, “Resonant cavity-enhanced (RCE) photodetectors,” IEEE J. Quantum Electron.27(8), 2025–2034 (1991).
[CrossRef]

Rylyakov, A. V.

S. Assefa, F. N. Xia, W. M. J. Green, C. L. Schow, A. V. Rylyakov, and Y. A. Vlasov, “CMOS-Integrated Optical Receivers for On-Chip Interconnects,” IEEE J. Sel. Top. Quantum Electron.16(5), 1376–1385 (2010).
[CrossRef]

Saraswat, K. C.

L. Tang, S. E. Kocabas, S. Latif, A. K. Okyay, D. S. Ly-Gagnon, K. C. Saraswat, and D. A. B. Miller, “Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna,” Nat. Photonics2(4), 226–229 (2008).
[CrossRef]

Sato, T.

K. Takeda, T. Sato, A. Shinya, K. Nozaki, W. Kobayashi, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers,” Nat. Photonics7(7), 569–575 (2013).
[CrossRef]

S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, and T. Kakitsuka, “Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser,” Opt. Express20(4), 3773–3780 (2012).
[CrossRef] [PubMed]

K. Nozaki, A. Shinya, S. Matsuo, Y. Suzaki, T. Segawa, T. Sato, Y. Kawaguchi, R. Takahashi, and M. Notomi, “Ultralow-power all-optical RAM based on nanocavities,” Nat. Photonics6(4), 248–252 (2012).
[CrossRef]

M. Notomi, A. Shinya, K. Nozaki, T. Tanabe, S. Matsuo, E. Kuramochi, T. Sato, H. Taniyama, and H. Sumikura, “Low-power nanophotonic devices based on photonic crystals towards dense photonic network on chip,” IET Circuits Devices Syst.5(2), 84–93 (2011).
[CrossRef]

S. Matsuo, A. Shinya, T. Kakitsuka, K. Nozaki, T. Segawa, T. Sato, Y. Kawaguchi, and M. Notomi, “High-speed ultracompact buried heterostructure photonic-crystal laser with 13 fJ of energy consumed per bit transmitted,” Nat. Photonics4(9), 648–654 (2010).
[CrossRef]

K. Nozaki, T. Tanabe, A. Shinya, S. Matsuo, T. Sato, H. Taniyama, and M. Notomi, “Sub-femtojoule all-optical switching using a photonic-crystal nanocavity,” Nat. Photonics4(7), 477–483 (2010).
[CrossRef]

S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, and T. Kakitsuka, “10-Gbit/s direct modulation of electrically driven photonic crystal nanocavity laser”in Proceedings of National Fiber Optic Engineers Conference, Los Angeles, CA, March 4-8, 2012, PDP5A.

Schow, C. L.

S. Assefa, F. N. Xia, W. M. J. Green, C. L. Schow, A. V. Rylyakov, and Y. A. Vlasov, “CMOS-Integrated Optical Receivers for On-Chip Interconnects,” IEEE J. Sel. Top. Quantum Electron.16(5), 1376–1385 (2010).
[CrossRef]

Segawa, T.

K. Nozaki, A. Shinya, S. Matsuo, Y. Suzaki, T. Segawa, T. Sato, Y. Kawaguchi, R. Takahashi, and M. Notomi, “Ultralow-power all-optical RAM based on nanocavities,” Nat. Photonics6(4), 248–252 (2012).
[CrossRef]

S. Matsuo, A. Shinya, T. Kakitsuka, K. Nozaki, T. Segawa, T. Sato, Y. Kawaguchi, and M. Notomi, “High-speed ultracompact buried heterostructure photonic-crystal laser with 13 fJ of energy consumed per bit transmitted,” Nat. Photonics4(9), 648–654 (2010).
[CrossRef]

Sheng, Z.

Shinya, A.

K. Takeda, T. Sato, A. Shinya, K. Nozaki, W. Kobayashi, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers,” Nat. Photonics7(7), 569–575 (2013).
[CrossRef]

S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, and T. Kakitsuka, “Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser,” Opt. Express20(4), 3773–3780 (2012).
[CrossRef] [PubMed]

K. Nozaki, A. Shinya, S. Matsuo, Y. Suzaki, T. Segawa, T. Sato, Y. Kawaguchi, R. Takahashi, and M. Notomi, “Ultralow-power all-optical RAM based on nanocavities,” Nat. Photonics6(4), 248–252 (2012).
[CrossRef]

M. Notomi, A. Shinya, K. Nozaki, T. Tanabe, S. Matsuo, E. Kuramochi, T. Sato, H. Taniyama, and H. Sumikura, “Low-power nanophotonic devices based on photonic crystals towards dense photonic network on chip,” IET Circuits Devices Syst.5(2), 84–93 (2011).
[CrossRef]

S. Matsuo, A. Shinya, T. Kakitsuka, K. Nozaki, T. Segawa, T. Sato, Y. Kawaguchi, and M. Notomi, “High-speed ultracompact buried heterostructure photonic-crystal laser with 13 fJ of energy consumed per bit transmitted,” Nat. Photonics4(9), 648–654 (2010).
[CrossRef]

T. Tanabe, H. Sumikura, H. Taniyama, A. Shinya, and M. Notomi, “All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip,” Appl. Phys. Lett.96(10), 101103 (2010).
[CrossRef]

K. Nozaki, T. Tanabe, A. Shinya, S. Matsuo, T. Sato, H. Taniyama, and M. Notomi, “Sub-femtojoule all-optical switching using a photonic-crystal nanocavity,” Nat. Photonics4(7), 477–483 (2010).
[CrossRef]

S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, and T. Kakitsuka, “10-Gbit/s direct modulation of electrically driven photonic crystal nanocavity laser”in Proceedings of National Fiber Optic Engineers Conference, Los Angeles, CA, March 4-8, 2012, PDP5A.

Starbuck, A. L.

Sumikura, H.

M. Notomi, A. Shinya, K. Nozaki, T. Tanabe, S. Matsuo, E. Kuramochi, T. Sato, H. Taniyama, and H. Sumikura, “Low-power nanophotonic devices based on photonic crystals towards dense photonic network on chip,” IET Circuits Devices Syst.5(2), 84–93 (2011).
[CrossRef]

T. Tanabe, H. Sumikura, H. Taniyama, A. Shinya, and M. Notomi, “All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip,” Appl. Phys. Lett.96(10), 101103 (2010).
[CrossRef]

Suzaki, Y.

K. Nozaki, A. Shinya, S. Matsuo, Y. Suzaki, T. Segawa, T. Sato, Y. Kawaguchi, R. Takahashi, and M. Notomi, “Ultralow-power all-optical RAM based on nanocavities,” Nat. Photonics6(4), 248–252 (2012).
[CrossRef]

Takahashi, R.

K. Nozaki, A. Shinya, S. Matsuo, Y. Suzaki, T. Segawa, T. Sato, Y. Kawaguchi, R. Takahashi, and M. Notomi, “Ultralow-power all-optical RAM based on nanocavities,” Nat. Photonics6(4), 248–252 (2012).
[CrossRef]

Takeda, K.

K. Takeda, T. Sato, A. Shinya, K. Nozaki, W. Kobayashi, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers,” Nat. Photonics7(7), 569–575 (2013).
[CrossRef]

S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, and T. Kakitsuka, “Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser,” Opt. Express20(4), 3773–3780 (2012).
[CrossRef] [PubMed]

S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, and T. Kakitsuka, “10-Gbit/s direct modulation of electrically driven photonic crystal nanocavity laser”in Proceedings of National Fiber Optic Engineers Conference, Los Angeles, CA, March 4-8, 2012, PDP5A.

Tan, C. L.

A. Karar, N. Das, C. L. Tan, K. Alameh, Y. T. Lee, and F. Karouta, “High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors,” Appl. Phys. Lett.99(13), 133112 (2011).
[CrossRef]

Tanabe, T.

M. Notomi, A. Shinya, K. Nozaki, T. Tanabe, S. Matsuo, E. Kuramochi, T. Sato, H. Taniyama, and H. Sumikura, “Low-power nanophotonic devices based on photonic crystals towards dense photonic network on chip,” IET Circuits Devices Syst.5(2), 84–93 (2011).
[CrossRef]

K. Nozaki, T. Tanabe, A. Shinya, S. Matsuo, T. Sato, H. Taniyama, and M. Notomi, “Sub-femtojoule all-optical switching using a photonic-crystal nanocavity,” Nat. Photonics4(7), 477–483 (2010).
[CrossRef]

T. Tanabe, H. Sumikura, H. Taniyama, A. Shinya, and M. Notomi, “All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip,” Appl. Phys. Lett.96(10), 101103 (2010).
[CrossRef]

Tang, L.

L. Tang, S. E. Kocabas, S. Latif, A. K. Okyay, D. S. Ly-Gagnon, K. C. Saraswat, and D. A. B. Miller, “Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna,” Nat. Photonics2(4), 226–229 (2008).
[CrossRef]

Taniyama, H.

K. Takeda, T. Sato, A. Shinya, K. Nozaki, W. Kobayashi, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers,” Nat. Photonics7(7), 569–575 (2013).
[CrossRef]

S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, and T. Kakitsuka, “Room-temperature continuous-wave operation of lateral current injection wavelength-scale embedded active-region photonic-crystal laser,” Opt. Express20(4), 3773–3780 (2012).
[CrossRef] [PubMed]

M. Notomi, A. Shinya, K. Nozaki, T. Tanabe, S. Matsuo, E. Kuramochi, T. Sato, H. Taniyama, and H. Sumikura, “Low-power nanophotonic devices based on photonic crystals towards dense photonic network on chip,” IET Circuits Devices Syst.5(2), 84–93 (2011).
[CrossRef]

T. Tanabe, H. Sumikura, H. Taniyama, A. Shinya, and M. Notomi, “All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip,” Appl. Phys. Lett.96(10), 101103 (2010).
[CrossRef]

K. Nozaki, T. Tanabe, A. Shinya, S. Matsuo, T. Sato, H. Taniyama, and M. Notomi, “Sub-femtojoule all-optical switching using a photonic-crystal nanocavity,” Nat. Photonics4(7), 477–483 (2010).
[CrossRef]

S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, and T. Kakitsuka, “10-Gbit/s direct modulation of electrically driven photonic crystal nanocavity laser”in Proceedings of National Fiber Optic Engineers Conference, Los Angeles, CA, March 4-8, 2012, PDP5A.

Trotter, D. C.

Unlu, M. S.

K. Kishino, M. S. Unlu, J. I. Chyi, J. Reed, L. Arsenault, and H. Morkoc, “Resonant cavity-enhanced (RCE) photodetectors,” IEEE J. Quantum Electron.27(8), 2025–2034 (1991).
[CrossRef]

Van Thourhout, D.

Vlasov, Y. A.

S. Assefa, F. N. Xia, W. M. J. Green, C. L. Schow, A. V. Rylyakov, and Y. A. Vlasov, “CMOS-Integrated Optical Receivers for On-Chip Interconnects,” IEEE J. Sel. Top. Quantum Electron.16(5), 1376–1385 (2010).
[CrossRef]

Watts, M. R.

Xia, F. N.

S. Assefa, F. N. Xia, W. M. J. Green, C. L. Schow, A. V. Rylyakov, and Y. A. Vlasov, “CMOS-Integrated Optical Receivers for On-Chip Interconnects,” IEEE J. Sel. Top. Quantum Electron.16(5), 1376–1385 (2010).
[CrossRef]

Yang, H.

H. Yang, C. L. L. M. Daunt, F. Gity, K. H. Lee, W. Han, B. Corbett, and F. H. Peters, “Zero-Bias High-Speed Edge-Coupled Unitraveling-Carrier InGaAs Photodiode,” IEEE Photon. Technol. Lett.22(23), 1747–1749 (2010).
[CrossRef]

Zortman, W. A.

Appl. Phys. Lett.

A. Karar, N. Das, C. L. Tan, K. Alameh, Y. T. Lee, and F. Karouta, “High-responsivity plasmonics-based GaAs metal-semiconductor-metal photodetectors,” Appl. Phys. Lett.99(13), 133112 (2011).
[CrossRef]

T. Tanabe, H. Sumikura, H. Taniyama, A. Shinya, and M. Notomi, “All-silicon sub-Gb/s telecom detector with low dark current and high quantum efficiency on chip,” Appl. Phys. Lett.96(10), 101103 (2010).
[CrossRef]

IEEE J. Quantum Electron.

K. Kishino, M. S. Unlu, J. I. Chyi, J. Reed, L. Arsenault, and H. Morkoc, “Resonant cavity-enhanced (RCE) photodetectors,” IEEE J. Quantum Electron.27(8), 2025–2034 (1991).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron.

S. Assefa, F. N. Xia, W. M. J. Green, C. L. Schow, A. V. Rylyakov, and Y. A. Vlasov, “CMOS-Integrated Optical Receivers for On-Chip Interconnects,” IEEE J. Sel. Top. Quantum Electron.16(5), 1376–1385 (2010).
[CrossRef]

IEEE Photon. Technol. Lett.

H. Yang, C. L. L. M. Daunt, F. Gity, K. H. Lee, W. Han, B. Corbett, and F. H. Peters, “Zero-Bias High-Speed Edge-Coupled Unitraveling-Carrier InGaAs Photodiode,” IEEE Photon. Technol. Lett.22(23), 1747–1749 (2010).
[CrossRef]

IET Circuits Devices Syst.

M. Notomi, A. Shinya, K. Nozaki, T. Tanabe, S. Matsuo, E. Kuramochi, T. Sato, H. Taniyama, and H. Sumikura, “Low-power nanophotonic devices based on photonic crystals towards dense photonic network on chip,” IET Circuits Devices Syst.5(2), 84–93 (2011).
[CrossRef]

J. Appl. Phys.

S. Adachi, “Optical Dispersion Relations for GaP, GaAs, GaSb, InP, InAs, InSb, AlxGa1-xAs, and In1-xGaxAsyP1-y,” J. Appl. Phys.66(12), 6030–6040 (1989).
[CrossRef]

Nat. Photonics

L. Tang, S. E. Kocabas, S. Latif, A. K. Okyay, D. S. Ly-Gagnon, K. C. Saraswat, and D. A. B. Miller, “Nanometre-scale germanium photodetector enhanced by a near-infrared dipole antenna,” Nat. Photonics2(4), 226–229 (2008).
[CrossRef]

S. Matsuo, A. Shinya, T. Kakitsuka, K. Nozaki, T. Segawa, T. Sato, Y. Kawaguchi, and M. Notomi, “High-speed ultracompact buried heterostructure photonic-crystal laser with 13 fJ of energy consumed per bit transmitted,” Nat. Photonics4(9), 648–654 (2010).
[CrossRef]

K. Takeda, T. Sato, A. Shinya, K. Nozaki, W. Kobayashi, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Few-fJ/bit data transmissions using directly modulated lambda-scale embedded active region photonic-crystal lasers,” Nat. Photonics7(7), 569–575 (2013).
[CrossRef]

K. Nozaki, A. Shinya, S. Matsuo, Y. Suzaki, T. Segawa, T. Sato, Y. Kawaguchi, R. Takahashi, and M. Notomi, “Ultralow-power all-optical RAM based on nanocavities,” Nat. Photonics6(4), 248–252 (2012).
[CrossRef]

K. Nozaki, T. Tanabe, A. Shinya, S. Matsuo, T. Sato, H. Taniyama, and M. Notomi, “Sub-femtojoule all-optical switching using a photonic-crystal nanocavity,” Nat. Photonics4(7), 477–483 (2010).
[CrossRef]

Opt. Express

Proc. IEEE

D. A. B. Miller, “Device requirements for optical interconnects to silicon chips,” Proc. IEEE97(7), 1166–1185 (2009).
[CrossRef]

Other

K. Takeda, T. Sato, A. Shinya, K. Nozaki, H. Taniyama, M. Notomi, K. Hasebe, T. Kakitsuka, and S. Matsuo, “Integrated on-chip optical links using photonic-crystal lasers and photodetectors with current blocking trenches” OFC/NFOEC, Anaheim, OM2J.5 (2013)
[CrossRef]

S. Matsuo, K. Takeda, T. Sato, M. Notomi, A. Shinya, K. Nozaki, H. Taniyama, K. Hasebe, and T. Kakitsuka, “10-Gbit/s direct modulation of electrically driven photonic crystal nanocavity laser”in Proceedings of National Fiber Optic Engineers Conference, Los Angeles, CA, March 4-8, 2012, PDP5A.

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (4)

Fig. 1
Fig. 1

Structure and SEM of the PD. (a) Structural schematic of PhC-based nano-PD. (b) SEM image of fabricated device. This is a different sample from the measured one, and the length of the embedded InGaAs absorber is shorter in the image.

Fig. 2
Fig. 2

Photocurrent spectrum for CW light input. (a) Transmission spectra for W8 waveguide and W8 + W1 waveguide. (b) Photocurrent spectrum. Input CW power was −17.3 ± 1.3 dBm. The inset is a schematic showing that the generated carriers at the InGaAs sacrificial layer are swept through the InP buffer layer.

Fig. 3
Fig. 3

DC responses. (a) Photocurrent versus applied bias voltage characteristics for CW input light. The wavelength was set at the peak of the photocurrent spectrum (1473 nm). The different colors denote the different optical input powers launched into the PD. (b) Photocurrent versus optical input power characteristics plotted for a bias voltage at −1 V. The red and blue plots are the results for the peak wavelength (1473 nm) and bottom wavelength (1470 nm), respectively.

Fig. 4
Fig. 4

Dynamic responses. (a) Eye pattern for 10 Gb/s NRZ optical signal. Reverse-bias voltage was 7 V. (b) Small signal responses for different reverse-bias voltages. The wavelength was set at the peak of the photocurrent spectrum.

Metrics