Abstract

Detailed studies of MgZnO-based metal-semiconductor-metal (MSM) solar-blind ultraviolet photodetector with different electrode structures are performed. A two-dimensional physical model is established based on the Poisson’s equation and time-dependent continuity equations, which is verified by our experimental data of conventional electrode MSM detector. The steady-state characteristics and transient response of semicircular and triangular electrode MSM detectors are also investigated by this model. Compared with the conventional electrode, semicircular and triangular electrode devices exhibit a substantial improvement on the photocurrent. At a bias of 10 V, the steady-state saturated photocurrents for semicircular and triangular electrode devices are 14.69 nA and 24.37 nA respectively, corresponding to a 20.5% and 100% increase over the conventional electrode detector. Meanwhile, the transient peak photocurrents reach 31.38 nA and 52.09 nA respectively, both of which are notably larger than that of conventional device.

© 2013 Optical Society of America

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    [CrossRef] [PubMed]
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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
  30. S. Averine, O. Bondarenko, and R. Sachot, “High-speed limitations of the metal-semiconductor-metal photodiode structures with submicron gap between the interdigitated contacts,” Solid-State Electron.46(12), 2045–2051 (2002).
    [CrossRef]
  31. G. Guarino, W. Donaldson, M. Mikulics, M. Marso, P. Kordoš, and R. Sobolewski, “Finite element simulation of metal–semiconductor–metal photodetector,” Solid-State Electron.53(10), 1144–1148 (2009).
    [CrossRef]

2012 (5)

Q. Zheng, F. Huang, J. Huang, Q. Hu, D. Chen, and K. Ding, “High-responsivity solar-blind photodetectors based on Mg0.46Zn0.54O thin film,” IEEE Electron Device Lett.33(7), 1033–1035 (2012).
[CrossRef]

R. McClintock, A. Haddadi, and M. Razeghi, “Free-space optical communication using mid-infrared or solar-blind ultraviolet sources and detectors,” Proc. SPIE8268, 826810 (2012).
[CrossRef]

Y. Zhu, H. Zhou, G. Fang, and M. Li, “Middle-ultraviolet-enhanced photodetectors based on Mg0.4Zn0.6O/ZnO homojunction with a high selectivity for 300 nm around light,” Semicond. Sci. Technol.27(6), 065003 (2012).
[CrossRef]

Z. Hu, Z. Li, L. Zhu, F. Liu, Y. Lv, X. Zhang, and Y. Wang, “Narrowband ultraviolet photodetector based on MgZnO and NPB heterojunction,” Opt. Lett.37(15), 3072–3074 (2012).
[CrossRef] [PubMed]

I. Bendoym, A. B. Golovin, and D. T. Crouse, “The light filtering and guiding properties of high finesse phase resonant compound gratings,” Opt. Express20(20), 22830–22846 (2012).
[CrossRef] [PubMed]

2011 (4)

B. Chen, Y.-T. Yang, C.-C. Chai, and X.-J. Zhang, “Quantitatively exploring the effect of a triangular electrode on performance enhancement in a 4H-SiC metal-semiconductor-metal ultraviolet photodetector,” Chin. Phys. Lett.28(6), 068501 (2011).
[CrossRef]

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett.99(24), 242105 (2011).
[CrossRef]

Q. Zheng, F. Huang, K. Ding, J. Huang, D. Chen, Z. Zhan, and Z. Lin, “MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates,” Appl. Phys. Lett.98(22), 221112 (2011).
[CrossRef]

Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett.98(10), 103506 (2011).
[CrossRef]

2010 (1)

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces2(7), 1918–1921 (2010).
[CrossRef]

2009 (2)

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun.149(45-46), 2021–2023 (2009).
[CrossRef]

G. Guarino, W. Donaldson, M. Mikulics, M. Marso, P. Kordoš, and R. Sobolewski, “Finite element simulation of metal–semiconductor–metal photodetector,” Solid-State Electron.53(10), 1144–1148 (2009).
[CrossRef]

2008 (5)

A. Müller, G. Konstantinidis, M. Dragoman, D. Neculoiu, A. Kostopoulos, M. Androulidaki, M. Kayambaki, and D. Vasilache, “GaN membrane metal-semiconductor-metal ultraviolet photodetector,” Appl. Opt.47(10), 1453–1456 (2008).
[CrossRef] [PubMed]

M. Mikulics, M. Marso, S. Wu, A. Fox, M. Lepsa, D. Grützmacher, R. Sobolewski, and P. Kordoˇs, “Sensitivity enhancement of metal-semiconductor-metal photodetectors on low-temperature-grown GaAs using alloyed contacts,” IEEE Photon. Technol. Lett.20(12), 1054–1056 (2008).
[CrossRef]

K.-W. Ang, S. Zhu, M. Yu, G.-Q. Lo, and D.-L. Kwong, “High-performance waveguided Ge-on-SOI metal–semiconductor–metal photodetectors with novel silicon–carbon (Si: C) Schottky barrier enhancement layer,” IEEE Photon. Technol. Lett.20(9), 754–756 (2008).
[CrossRef]

K.-W. Ang, S.-Y. Zhu, J. Wang, K.-T. Chua, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Novel silicon-carbon (Si: C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectors,” IEEE Electron Device Lett.29(7), 704–707 (2008).
[CrossRef]

K. Lee, P. C. Chang, S. J. Chang, C. Yu, Y. Wang, and S. Wu, “GaN MSM photodetectors with an unactivated Mg-doped GaN cap layer and sputtered ITO electrodes,” J. Electrochem. Soc.155(6), J165–J167 (2008).
[CrossRef]

2006 (3)

D. Crouse, M. Arend, J. Zou, and P. Keshavareddy, “Numerical modeling of electromagnetic resonance enhanced silicon metal-semiconductor-metal photodetectors,” Opt. Express14(6), 2047–2061 (2006).
[CrossRef] [PubMed]

D. Crouse and P. Keshavareddy, “A method for designing electromagnetic resonance enhanced silicon-on-insulator metal–semiconductor–metal photodetectors,” J. Opt. A, Pure Appl. Opt.8(2), 175–181 (2006).
[CrossRef]

H.-M. Lü, G.-D. Chen, and J.-S. Yuan, “The relation between the electrode shape and the sensitivity of photoconductive ultraviolet detectors,” Acta Photonica Sinica35, 1052–1055 (2006).

2005 (1)

D. Crouse and R. Solomon, “Numerical modeling of surface plasmon enhanced silicon on insulator avalanche photodiodes,” Solid-State Electron.49(10), 1697–1701 (2005).
[CrossRef]

2004 (1)

D. T. Crouse, “Surface plasmon effects in metal-semiconductor-metal photodetectors,” Proc. SPIE5594, 45–56 (2004).
[CrossRef]

2003 (1)

J. Chen, W. Shen, N. Chen, D. Qiu, and H. Wu, “The study of composition non-uniformity in ternary MgxZn1− xO thin films,” J. Phys. Condens. Matter15(30), L475–L482 (2003).
[CrossRef]

2002 (2)

S. Averine, O. Bondarenko, and R. Sachot, “High-speed limitations of the metal-semiconductor-metal photodiode structures with submicron gap between the interdigitated contacts,” Solid-State Electron.46(12), 2045–2051 (2002).
[CrossRef]

S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett.80(9), 1529–1531 (2002).
[CrossRef]

2001 (3)

J. Narayan, A. K. Sharma, A. Kvit, C. Jin, J. Muth, and O. Holland, “Novel cubic ZnxMg1−xO epitaxial heterostructures on Si (100) substrates,” Solid State Commun.121(1), 9–13 (2001).
[CrossRef]

F. Auret, S. Goodman, M. Hayes, M. Legodi, H. Van Laarhoven, and D. C. Look, “Electrical characterization of 1.8 MeV proton-bombarded ZnO,” Appl. Phys. Lett.79(19), 3074–3076 (2001).
[CrossRef]

W. I. Park, G. C. Yi, and H. M. Jang, “Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1-xMgxO thin films,” Appl. Phys. Lett.79(13), 2022–2024 (2001).
[CrossRef]

1994 (1)

A. F. Salem, A. W. Smith, and K. F. Brennan, “Theoretical study of the effect of an AlGaAs double heterostructure on metal-semiconductor-metal photodetector performance,” IEEE Trans. Electron. Dev.41(7), 1112–1119 (1994).
[CrossRef]

Androulidaki, M.

Ang, K.-W.

K.-W. Ang, S. Zhu, M. Yu, G.-Q. Lo, and D.-L. Kwong, “High-performance waveguided Ge-on-SOI metal–semiconductor–metal photodetectors with novel silicon–carbon (Si: C) Schottky barrier enhancement layer,” IEEE Photon. Technol. Lett.20(9), 754–756 (2008).
[CrossRef]

K.-W. Ang, S.-Y. Zhu, J. Wang, K.-T. Chua, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Novel silicon-carbon (Si: C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectors,” IEEE Electron Device Lett.29(7), 704–707 (2008).
[CrossRef]

Arend, M.

Auret, F.

F. Auret, S. Goodman, M. Hayes, M. Legodi, H. Van Laarhoven, and D. C. Look, “Electrical characterization of 1.8 MeV proton-bombarded ZnO,” Appl. Phys. Lett.79(19), 3074–3076 (2001).
[CrossRef]

Averine, S.

S. Averine, O. Bondarenko, and R. Sachot, “High-speed limitations of the metal-semiconductor-metal photodiode structures with submicron gap between the interdigitated contacts,” Solid-State Electron.46(12), 2045–2051 (2002).
[CrossRef]

Bendoym, I.

Bondarenko, O.

S. Averine, O. Bondarenko, and R. Sachot, “High-speed limitations of the metal-semiconductor-metal photodiode structures with submicron gap between the interdigitated contacts,” Solid-State Electron.46(12), 2045–2051 (2002).
[CrossRef]

Brennan, K. F.

A. F. Salem, A. W. Smith, and K. F. Brennan, “Theoretical study of the effect of an AlGaAs double heterostructure on metal-semiconductor-metal photodetector performance,” IEEE Trans. Electron. Dev.41(7), 1112–1119 (1994).
[CrossRef]

Chai, C.-C.

B. Chen, Y.-T. Yang, C.-C. Chai, and X.-J. Zhang, “Quantitatively exploring the effect of a triangular electrode on performance enhancement in a 4H-SiC metal-semiconductor-metal ultraviolet photodetector,” Chin. Phys. Lett.28(6), 068501 (2011).
[CrossRef]

Chang, P. C.

K. Lee, P. C. Chang, S. J. Chang, C. Yu, Y. Wang, and S. Wu, “GaN MSM photodetectors with an unactivated Mg-doped GaN cap layer and sputtered ITO electrodes,” J. Electrochem. Soc.155(6), J165–J167 (2008).
[CrossRef]

Chang, S. J.

K. Lee, P. C. Chang, S. J. Chang, C. Yu, Y. Wang, and S. Wu, “GaN MSM photodetectors with an unactivated Mg-doped GaN cap layer and sputtered ITO electrodes,” J. Electrochem. Soc.155(6), J165–J167 (2008).
[CrossRef]

Chen, B.

B. Chen, Y.-T. Yang, C.-C. Chai, and X.-J. Zhang, “Quantitatively exploring the effect of a triangular electrode on performance enhancement in a 4H-SiC metal-semiconductor-metal ultraviolet photodetector,” Chin. Phys. Lett.28(6), 068501 (2011).
[CrossRef]

Chen, D.

Q. Zheng, F. Huang, J. Huang, Q. Hu, D. Chen, and K. Ding, “High-responsivity solar-blind photodetectors based on Mg0.46Zn0.54O thin film,” IEEE Electron Device Lett.33(7), 1033–1035 (2012).
[CrossRef]

Q. Zheng, F. Huang, K. Ding, J. Huang, D. Chen, Z. Zhan, and Z. Lin, “MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates,” Appl. Phys. Lett.98(22), 221112 (2011).
[CrossRef]

Chen, G.-D.

H.-M. Lü, G.-D. Chen, and J.-S. Yuan, “The relation between the electrode shape and the sensitivity of photoconductive ultraviolet detectors,” Acta Photonica Sinica35, 1052–1055 (2006).

Chen, J.

J. Chen, W. Shen, N. Chen, D. Qiu, and H. Wu, “The study of composition non-uniformity in ternary MgxZn1− xO thin films,” J. Phys. Condens. Matter15(30), L475–L482 (2003).
[CrossRef]

Chen, N.

J. Chen, W. Shen, N. Chen, D. Qiu, and H. Wu, “The study of composition non-uniformity in ternary MgxZn1− xO thin films,” J. Phys. Condens. Matter15(30), L475–L482 (2003).
[CrossRef]

Choopun, S.

S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett.80(9), 1529–1531 (2002).
[CrossRef]

Chua, K.-T.

K.-W. Ang, S.-Y. Zhu, J. Wang, K.-T. Chua, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Novel silicon-carbon (Si: C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectors,” IEEE Electron Device Lett.29(7), 704–707 (2008).
[CrossRef]

Crouse, D.

D. Crouse and P. Keshavareddy, “A method for designing electromagnetic resonance enhanced silicon-on-insulator metal–semiconductor–metal photodetectors,” J. Opt. A, Pure Appl. Opt.8(2), 175–181 (2006).
[CrossRef]

D. Crouse, M. Arend, J. Zou, and P. Keshavareddy, “Numerical modeling of electromagnetic resonance enhanced silicon metal-semiconductor-metal photodetectors,” Opt. Express14(6), 2047–2061 (2006).
[CrossRef] [PubMed]

D. Crouse and R. Solomon, “Numerical modeling of surface plasmon enhanced silicon on insulator avalanche photodiodes,” Solid-State Electron.49(10), 1697–1701 (2005).
[CrossRef]

Crouse, D. T.

Ding, K.

Q. Zheng, F. Huang, J. Huang, Q. Hu, D. Chen, and K. Ding, “High-responsivity solar-blind photodetectors based on Mg0.46Zn0.54O thin film,” IEEE Electron Device Lett.33(7), 1033–1035 (2012).
[CrossRef]

Q. Zheng, F. Huang, K. Ding, J. Huang, D. Chen, Z. Zhan, and Z. Lin, “MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates,” Appl. Phys. Lett.98(22), 221112 (2011).
[CrossRef]

Donaldson, W.

G. Guarino, W. Donaldson, M. Mikulics, M. Marso, P. Kordoš, and R. Sobolewski, “Finite element simulation of metal–semiconductor–metal photodetector,” Solid-State Electron.53(10), 1144–1148 (2009).
[CrossRef]

Dragoman, M.

Du, X.

Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett.98(10), 103506 (2011).
[CrossRef]

Fang, G.

Y. Zhu, H. Zhou, G. Fang, and M. Li, “Middle-ultraviolet-enhanced photodetectors based on Mg0.4Zn0.6O/ZnO homojunction with a high selectivity for 300 nm around light,” Semicond. Sci. Technol.27(6), 065003 (2012).
[CrossRef]

Fox, A.

M. Mikulics, M. Marso, S. Wu, A. Fox, M. Lepsa, D. Grützmacher, R. Sobolewski, and P. Kordoˇs, “Sensitivity enhancement of metal-semiconductor-metal photodetectors on low-temperature-grown GaAs using alloyed contacts,” IEEE Photon. Technol. Lett.20(12), 1054–1056 (2008).
[CrossRef]

Golovin, A. B.

Goodman, S.

F. Auret, S. Goodman, M. Hayes, M. Legodi, H. Van Laarhoven, and D. C. Look, “Electrical characterization of 1.8 MeV proton-bombarded ZnO,” Appl. Phys. Lett.79(19), 3074–3076 (2001).
[CrossRef]

Grützmacher, D.

M. Mikulics, M. Marso, S. Wu, A. Fox, M. Lepsa, D. Grützmacher, R. Sobolewski, and P. Kordoˇs, “Sensitivity enhancement of metal-semiconductor-metal photodetectors on low-temperature-grown GaAs using alloyed contacts,” IEEE Photon. Technol. Lett.20(12), 1054–1056 (2008).
[CrossRef]

Guarino, G.

G. Guarino, W. Donaldson, M. Mikulics, M. Marso, P. Kordoš, and R. Sobolewski, “Finite element simulation of metal–semiconductor–metal photodetector,” Solid-State Electron.53(10), 1144–1148 (2009).
[CrossRef]

Haddadi, A.

R. McClintock, A. Haddadi, and M. Razeghi, “Free-space optical communication using mid-infrared or solar-blind ultraviolet sources and detectors,” Proc. SPIE8268, 826810 (2012).
[CrossRef]

Han, S.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett.99(24), 242105 (2011).
[CrossRef]

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces2(7), 1918–1921 (2010).
[CrossRef]

Hayes, M.

F. Auret, S. Goodman, M. Hayes, M. Legodi, H. Van Laarhoven, and D. C. Look, “Electrical characterization of 1.8 MeV proton-bombarded ZnO,” Appl. Phys. Lett.79(19), 3074–3076 (2001).
[CrossRef]

Holland, O.

J. Narayan, A. K. Sharma, A. Kvit, C. Jin, J. Muth, and O. Holland, “Novel cubic ZnxMg1−xO epitaxial heterostructures on Si (100) substrates,” Solid State Commun.121(1), 9–13 (2001).
[CrossRef]

Hou, Y.

Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett.98(10), 103506 (2011).
[CrossRef]

Hu, Q.

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Huang, F.

Q. Zheng, F. Huang, J. Huang, Q. Hu, D. Chen, and K. Ding, “High-responsivity solar-blind photodetectors based on Mg0.46Zn0.54O thin film,” IEEE Electron Device Lett.33(7), 1033–1035 (2012).
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Q. Zheng, F. Huang, J. Huang, Q. Hu, D. Chen, and K. Ding, “High-responsivity solar-blind photodetectors based on Mg0.46Zn0.54O thin film,” IEEE Electron Device Lett.33(7), 1033–1035 (2012).
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Q. Zheng, F. Huang, K. Ding, J. Huang, D. Chen, Z. Zhan, and Z. Lin, “MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates,” Appl. Phys. Lett.98(22), 221112 (2011).
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W. I. Park, G. C. Yi, and H. M. Jang, “Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1-xMgxO thin films,” Appl. Phys. Lett.79(13), 2022–2024 (2001).
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S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett.99(24), 242105 (2011).
[CrossRef]

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J. Narayan, A. K. Sharma, A. Kvit, C. Jin, J. Muth, and O. Holland, “Novel cubic ZnxMg1−xO epitaxial heterostructures on Si (100) substrates,” Solid State Commun.121(1), 9–13 (2001).
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L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun.149(45-46), 2021–2023 (2009).
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Keshavareddy, P.

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Kvit, A.

J. Narayan, A. K. Sharma, A. Kvit, C. Jin, J. Muth, and O. Holland, “Novel cubic ZnxMg1−xO epitaxial heterostructures on Si (100) substrates,” Solid State Commun.121(1), 9–13 (2001).
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K.-W. Ang, S. Zhu, M. Yu, G.-Q. Lo, and D.-L. Kwong, “High-performance waveguided Ge-on-SOI metal–semiconductor–metal photodetectors with novel silicon–carbon (Si: C) Schottky barrier enhancement layer,” IEEE Photon. Technol. Lett.20(9), 754–756 (2008).
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K.-W. Ang, S.-Y. Zhu, J. Wang, K.-T. Chua, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Novel silicon-carbon (Si: C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectors,” IEEE Electron Device Lett.29(7), 704–707 (2008).
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K. Lee, P. C. Chang, S. J. Chang, C. Yu, Y. Wang, and S. Wu, “GaN MSM photodetectors with an unactivated Mg-doped GaN cap layer and sputtered ITO electrodes,” J. Electrochem. Soc.155(6), J165–J167 (2008).
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F. Auret, S. Goodman, M. Hayes, M. Legodi, H. Van Laarhoven, and D. C. Look, “Electrical characterization of 1.8 MeV proton-bombarded ZnO,” Appl. Phys. Lett.79(19), 3074–3076 (2001).
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M. Mikulics, M. Marso, S. Wu, A. Fox, M. Lepsa, D. Grützmacher, R. Sobolewski, and P. Kordoˇs, “Sensitivity enhancement of metal-semiconductor-metal photodetectors on low-temperature-grown GaAs using alloyed contacts,” IEEE Photon. Technol. Lett.20(12), 1054–1056 (2008).
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S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett.99(24), 242105 (2011).
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L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun.149(45-46), 2021–2023 (2009).
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[CrossRef]

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Liu, Z.

Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett.98(10), 103506 (2011).
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K.-W. Ang, S.-Y. Zhu, J. Wang, K.-T. Chua, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Novel silicon-carbon (Si: C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectors,” IEEE Electron Device Lett.29(7), 704–707 (2008).
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K.-W. Ang, S. Zhu, M. Yu, G.-Q. Lo, and D.-L. Kwong, “High-performance waveguided Ge-on-SOI metal–semiconductor–metal photodetectors with novel silicon–carbon (Si: C) Schottky barrier enhancement layer,” IEEE Photon. Technol. Lett.20(9), 754–756 (2008).
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F. Auret, S. Goodman, M. Hayes, M. Legodi, H. Van Laarhoven, and D. C. Look, “Electrical characterization of 1.8 MeV proton-bombarded ZnO,” Appl. Phys. Lett.79(19), 3074–3076 (2001).
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H.-M. Lü, G.-D. Chen, and J.-S. Yuan, “The relation between the electrode shape and the sensitivity of photoconductive ultraviolet detectors,” Acta Photonica Sinica35, 1052–1055 (2006).

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Marso, M.

G. Guarino, W. Donaldson, M. Mikulics, M. Marso, P. Kordoš, and R. Sobolewski, “Finite element simulation of metal–semiconductor–metal photodetector,” Solid-State Electron.53(10), 1144–1148 (2009).
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M. Mikulics, M. Marso, S. Wu, A. Fox, M. Lepsa, D. Grützmacher, R. Sobolewski, and P. Kordoˇs, “Sensitivity enhancement of metal-semiconductor-metal photodetectors on low-temperature-grown GaAs using alloyed contacts,” IEEE Photon. Technol. Lett.20(12), 1054–1056 (2008).
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Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett.98(10), 103506 (2011).
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G. Guarino, W. Donaldson, M. Mikulics, M. Marso, P. Kordoš, and R. Sobolewski, “Finite element simulation of metal–semiconductor–metal photodetector,” Solid-State Electron.53(10), 1144–1148 (2009).
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M. Mikulics, M. Marso, S. Wu, A. Fox, M. Lepsa, D. Grützmacher, R. Sobolewski, and P. Kordoˇs, “Sensitivity enhancement of metal-semiconductor-metal photodetectors on low-temperature-grown GaAs using alloyed contacts,” IEEE Photon. Technol. Lett.20(12), 1054–1056 (2008).
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Muth, J.

J. Narayan, A. K. Sharma, A. Kvit, C. Jin, J. Muth, and O. Holland, “Novel cubic ZnxMg1−xO epitaxial heterostructures on Si (100) substrates,” Solid State Commun.121(1), 9–13 (2001).
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J. Narayan, A. K. Sharma, A. Kvit, C. Jin, J. Muth, and O. Holland, “Novel cubic ZnxMg1−xO epitaxial heterostructures on Si (100) substrates,” Solid State Commun.121(1), 9–13 (2001).
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Park, W. I.

W. I. Park, G. C. Yi, and H. M. Jang, “Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1-xMgxO thin films,” Appl. Phys. Lett.79(13), 2022–2024 (2001).
[CrossRef]

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J. Chen, W. Shen, N. Chen, D. Qiu, and H. Wu, “The study of composition non-uniformity in ternary MgxZn1− xO thin films,” J. Phys. Condens. Matter15(30), L475–L482 (2003).
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R. McClintock, A. Haddadi, and M. Razeghi, “Free-space optical communication using mid-infrared or solar-blind ultraviolet sources and detectors,” Proc. SPIE8268, 826810 (2012).
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L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun.149(45-46), 2021–2023 (2009).
[CrossRef]

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S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett.99(24), 242105 (2011).
[CrossRef]

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J. Narayan, A. K. Sharma, A. Kvit, C. Jin, J. Muth, and O. Holland, “Novel cubic ZnxMg1−xO epitaxial heterostructures on Si (100) substrates,” Solid State Commun.121(1), 9–13 (2001).
[CrossRef]

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S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett.80(9), 1529–1531 (2002).
[CrossRef]

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S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett.99(24), 242105 (2011).
[CrossRef]

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces2(7), 1918–1921 (2010).
[CrossRef]

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun.149(45-46), 2021–2023 (2009).
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S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett.80(9), 1529–1531 (2002).
[CrossRef]

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J. Chen, W. Shen, N. Chen, D. Qiu, and H. Wu, “The study of composition non-uniformity in ternary MgxZn1− xO thin films,” J. Phys. Condens. Matter15(30), L475–L482 (2003).
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A. F. Salem, A. W. Smith, and K. F. Brennan, “Theoretical study of the effect of an AlGaAs double heterostructure on metal-semiconductor-metal photodetector performance,” IEEE Trans. Electron. Dev.41(7), 1112–1119 (1994).
[CrossRef]

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G. Guarino, W. Donaldson, M. Mikulics, M. Marso, P. Kordoš, and R. Sobolewski, “Finite element simulation of metal–semiconductor–metal photodetector,” Solid-State Electron.53(10), 1144–1148 (2009).
[CrossRef]

M. Mikulics, M. Marso, S. Wu, A. Fox, M. Lepsa, D. Grützmacher, R. Sobolewski, and P. Kordoˇs, “Sensitivity enhancement of metal-semiconductor-metal photodetectors on low-temperature-grown GaAs using alloyed contacts,” IEEE Photon. Technol. Lett.20(12), 1054–1056 (2008).
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Venkatesan, T.

S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett.80(9), 1529–1531 (2002).
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S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett.80(9), 1529–1531 (2002).
[CrossRef]

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K.-W. Ang, S.-Y. Zhu, J. Wang, K.-T. Chua, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Novel silicon-carbon (Si: C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectors,” IEEE Electron Device Lett.29(7), 704–707 (2008).
[CrossRef]

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S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett.99(24), 242105 (2011).
[CrossRef]

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces2(7), 1918–1921 (2010).
[CrossRef]

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun.149(45-46), 2021–2023 (2009).
[CrossRef]

Wang, S.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett.99(24), 242105 (2011).
[CrossRef]

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Z. Hu, Z. Li, L. Zhu, F. Liu, Y. Lv, X. Zhang, and Y. Wang, “Narrowband ultraviolet photodetector based on MgZnO and NPB heterojunction,” Opt. Lett.37(15), 3072–3074 (2012).
[CrossRef] [PubMed]

K. Lee, P. C. Chang, S. J. Chang, C. Yu, Y. Wang, and S. Wu, “GaN MSM photodetectors with an unactivated Mg-doped GaN cap layer and sputtered ITO electrodes,” J. Electrochem. Soc.155(6), J165–J167 (2008).
[CrossRef]

Wu, H.

J. Chen, W. Shen, N. Chen, D. Qiu, and H. Wu, “The study of composition non-uniformity in ternary MgxZn1− xO thin films,” J. Phys. Condens. Matter15(30), L475–L482 (2003).
[CrossRef]

Wu, S.

M. Mikulics, M. Marso, S. Wu, A. Fox, M. Lepsa, D. Grützmacher, R. Sobolewski, and P. Kordoˇs, “Sensitivity enhancement of metal-semiconductor-metal photodetectors on low-temperature-grown GaAs using alloyed contacts,” IEEE Photon. Technol. Lett.20(12), 1054–1056 (2008).
[CrossRef]

K. Lee, P. C. Chang, S. J. Chang, C. Yu, Y. Wang, and S. Wu, “GaN MSM photodetectors with an unactivated Mg-doped GaN cap layer and sputtered ITO electrodes,” J. Electrochem. Soc.155(6), J165–J167 (2008).
[CrossRef]

Yang, W.

S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett.80(9), 1529–1531 (2002).
[CrossRef]

Yang, Y.-T.

B. Chen, Y.-T. Yang, C.-C. Chai, and X.-J. Zhang, “Quantitatively exploring the effect of a triangular electrode on performance enhancement in a 4H-SiC metal-semiconductor-metal ultraviolet photodetector,” Chin. Phys. Lett.28(6), 068501 (2011).
[CrossRef]

Yao, B.

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces2(7), 1918–1921 (2010).
[CrossRef]

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun.149(45-46), 2021–2023 (2009).
[CrossRef]

Yi, G. C.

W. I. Park, G. C. Yi, and H. M. Jang, “Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1-xMgxO thin films,” Appl. Phys. Lett.79(13), 2022–2024 (2001).
[CrossRef]

Yu, C.

K. Lee, P. C. Chang, S. J. Chang, C. Yu, Y. Wang, and S. Wu, “GaN MSM photodetectors with an unactivated Mg-doped GaN cap layer and sputtered ITO electrodes,” J. Electrochem. Soc.155(6), J165–J167 (2008).
[CrossRef]

Yu, M.

K.-W. Ang, S. Zhu, M. Yu, G.-Q. Lo, and D.-L. Kwong, “High-performance waveguided Ge-on-SOI metal–semiconductor–metal photodetectors with novel silicon–carbon (Si: C) Schottky barrier enhancement layer,” IEEE Photon. Technol. Lett.20(9), 754–756 (2008).
[CrossRef]

Yu, M.-B.

K.-W. Ang, S.-Y. Zhu, J. Wang, K.-T. Chua, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Novel silicon-carbon (Si: C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectors,” IEEE Electron Device Lett.29(7), 704–707 (2008).
[CrossRef]

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H.-M. Lü, G.-D. Chen, and J.-S. Yuan, “The relation between the electrode shape and the sensitivity of photoconductive ultraviolet detectors,” Acta Photonica Sinica35, 1052–1055 (2006).

Zhan, Z.

Q. Zheng, F. Huang, K. Ding, J. Huang, D. Chen, Z. Zhan, and Z. Lin, “MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates,” Appl. Phys. Lett.98(22), 221112 (2011).
[CrossRef]

Zhang, J.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett.99(24), 242105 (2011).
[CrossRef]

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces2(7), 1918–1921 (2010).
[CrossRef]

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun.149(45-46), 2021–2023 (2009).
[CrossRef]

Zhang, T.

Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett.98(10), 103506 (2011).
[CrossRef]

Zhang, X.

Zhang, X.-J.

B. Chen, Y.-T. Yang, C.-C. Chai, and X.-J. Zhang, “Quantitatively exploring the effect of a triangular electrode on performance enhancement in a 4H-SiC metal-semiconductor-metal ultraviolet photodetector,” Chin. Phys. Lett.28(6), 068501 (2011).
[CrossRef]

Zhang, Y.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett.99(24), 242105 (2011).
[CrossRef]

Zhang, Z.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett.99(24), 242105 (2011).
[CrossRef]

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces2(7), 1918–1921 (2010).
[CrossRef]

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun.149(45-46), 2021–2023 (2009).
[CrossRef]

Zhao, D.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett.99(24), 242105 (2011).
[CrossRef]

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces2(7), 1918–1921 (2010).
[CrossRef]

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun.149(45-46), 2021–2023 (2009).
[CrossRef]

Zhao, H.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett.99(24), 242105 (2011).
[CrossRef]

Zhao, Y.

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces2(7), 1918–1921 (2010).
[CrossRef]

Zheng, J.

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett.99(24), 242105 (2011).
[CrossRef]

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces2(7), 1918–1921 (2010).
[CrossRef]

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun.149(45-46), 2021–2023 (2009).
[CrossRef]

Zheng, Q.

Q. Zheng, F. Huang, J. Huang, Q. Hu, D. Chen, and K. Ding, “High-responsivity solar-blind photodetectors based on Mg0.46Zn0.54O thin film,” IEEE Electron Device Lett.33(7), 1033–1035 (2012).
[CrossRef]

Q. Zheng, F. Huang, K. Ding, J. Huang, D. Chen, Z. Zhan, and Z. Lin, “MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates,” Appl. Phys. Lett.98(22), 221112 (2011).
[CrossRef]

Zhou, H.

Y. Zhu, H. Zhou, G. Fang, and M. Li, “Middle-ultraviolet-enhanced photodetectors based on Mg0.4Zn0.6O/ZnO homojunction with a high selectivity for 300 nm around light,” Semicond. Sci. Technol.27(6), 065003 (2012).
[CrossRef]

Zhu, L.

Zhu, S.

K.-W. Ang, S. Zhu, M. Yu, G.-Q. Lo, and D.-L. Kwong, “High-performance waveguided Ge-on-SOI metal–semiconductor–metal photodetectors with novel silicon–carbon (Si: C) Schottky barrier enhancement layer,” IEEE Photon. Technol. Lett.20(9), 754–756 (2008).
[CrossRef]

Zhu, S.-Y.

K.-W. Ang, S.-Y. Zhu, J. Wang, K.-T. Chua, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Novel silicon-carbon (Si: C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectors,” IEEE Electron Device Lett.29(7), 704–707 (2008).
[CrossRef]

Zhu, Y.

Y. Zhu, H. Zhou, G. Fang, and M. Li, “Middle-ultraviolet-enhanced photodetectors based on Mg0.4Zn0.6O/ZnO homojunction with a high selectivity for 300 nm around light,” Semicond. Sci. Technol.27(6), 065003 (2012).
[CrossRef]

Zou, J.

ACS Appl. Mater. Interfaces (1)

S. Han, J. Zhang, Z. Zhang, Y. Zhao, L. Wang, J. Zheng, B. Yao, D. Zhao, and D. Shen, “Mg0.58Zn0.42O Thin Films on MgO Substrates with MgO Buffer Layer,” ACS Appl. Mater. Interfaces2(7), 1918–1921 (2010).
[CrossRef]

Acta Photonica Sinica (1)

H.-M. Lü, G.-D. Chen, and J.-S. Yuan, “The relation between the electrode shape and the sensitivity of photoconductive ultraviolet detectors,” Acta Photonica Sinica35, 1052–1055 (2006).

Appl. Opt. (1)

Appl. Phys. Lett. (6)

S. Han, Z. Zhang, J. Zhang, L. Wang, J. Zheng, H. Zhao, Y. Zhang, M. Jiang, S. Wang, D. Zhao, C. X. Shan, B. Li, and D. Shen, “Photoconductive gain in solar-blind ultraviolet photodetector based on Mg0.52Zn0.48O thin film,” Appl. Phys. Lett.99(24), 242105 (2011).
[CrossRef]

W. I. Park, G. C. Yi, and H. M. Jang, “Metalorganic vapor-phase epitaxial growth and photoluminescent properties of Zn1-xMgxO thin films,” Appl. Phys. Lett.79(13), 2022–2024 (2001).
[CrossRef]

Q. Zheng, F. Huang, K. Ding, J. Huang, D. Chen, Z. Zhan, and Z. Lin, “MgZnO-based metal-semiconductor-metal solar-blind photodetectors on ZnO substrates,” Appl. Phys. Lett.98(22), 221112 (2011).
[CrossRef]

F. Auret, S. Goodman, M. Hayes, M. Legodi, H. Van Laarhoven, and D. C. Look, “Electrical characterization of 1.8 MeV proton-bombarded ZnO,” Appl. Phys. Lett.79(19), 3074–3076 (2001).
[CrossRef]

S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, “Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films,” Appl. Phys. Lett.80(9), 1529–1531 (2002).
[CrossRef]

Y. Hou, Z. Mei, Z. Liu, T. Zhang, and X. Du, “Mg0.55Zn0.45O solar-blind ultraviolet detector with high photoresponse performance and large internal gain,” Appl. Phys. Lett.98(10), 103506 (2011).
[CrossRef]

Chin. Phys. Lett. (1)

B. Chen, Y.-T. Yang, C.-C. Chai, and X.-J. Zhang, “Quantitatively exploring the effect of a triangular electrode on performance enhancement in a 4H-SiC metal-semiconductor-metal ultraviolet photodetector,” Chin. Phys. Lett.28(6), 068501 (2011).
[CrossRef]

IEEE Electron Device Lett. (2)

Q. Zheng, F. Huang, J. Huang, Q. Hu, D. Chen, and K. Ding, “High-responsivity solar-blind photodetectors based on Mg0.46Zn0.54O thin film,” IEEE Electron Device Lett.33(7), 1033–1035 (2012).
[CrossRef]

K.-W. Ang, S.-Y. Zhu, J. Wang, K.-T. Chua, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Novel silicon-carbon (Si: C) Schottky barrier enhancement layer for dark-current suppression in Ge-on-SOI MSM photodetectors,” IEEE Electron Device Lett.29(7), 704–707 (2008).
[CrossRef]

IEEE Photon. Technol. Lett. (2)

K.-W. Ang, S. Zhu, M. Yu, G.-Q. Lo, and D.-L. Kwong, “High-performance waveguided Ge-on-SOI metal–semiconductor–metal photodetectors with novel silicon–carbon (Si: C) Schottky barrier enhancement layer,” IEEE Photon. Technol. Lett.20(9), 754–756 (2008).
[CrossRef]

M. Mikulics, M. Marso, S. Wu, A. Fox, M. Lepsa, D. Grützmacher, R. Sobolewski, and P. Kordoˇs, “Sensitivity enhancement of metal-semiconductor-metal photodetectors on low-temperature-grown GaAs using alloyed contacts,” IEEE Photon. Technol. Lett.20(12), 1054–1056 (2008).
[CrossRef]

IEEE Trans. Electron. Dev. (1)

A. F. Salem, A. W. Smith, and K. F. Brennan, “Theoretical study of the effect of an AlGaAs double heterostructure on metal-semiconductor-metal photodetector performance,” IEEE Trans. Electron. Dev.41(7), 1112–1119 (1994).
[CrossRef]

J. Electrochem. Soc. (1)

K. Lee, P. C. Chang, S. J. Chang, C. Yu, Y. Wang, and S. Wu, “GaN MSM photodetectors with an unactivated Mg-doped GaN cap layer and sputtered ITO electrodes,” J. Electrochem. Soc.155(6), J165–J167 (2008).
[CrossRef]

J. Opt. A, Pure Appl. Opt. (1)

D. Crouse and P. Keshavareddy, “A method for designing electromagnetic resonance enhanced silicon-on-insulator metal–semiconductor–metal photodetectors,” J. Opt. A, Pure Appl. Opt.8(2), 175–181 (2006).
[CrossRef]

J. Phys. Condens. Matter (1)

J. Chen, W. Shen, N. Chen, D. Qiu, and H. Wu, “The study of composition non-uniformity in ternary MgxZn1− xO thin films,” J. Phys. Condens. Matter15(30), L475–L482 (2003).
[CrossRef]

Opt. Express (2)

Opt. Lett. (1)

Proc. SPIE (2)

D. T. Crouse, “Surface plasmon effects in metal-semiconductor-metal photodetectors,” Proc. SPIE5594, 45–56 (2004).
[CrossRef]

R. McClintock, A. Haddadi, and M. Razeghi, “Free-space optical communication using mid-infrared or solar-blind ultraviolet sources and detectors,” Proc. SPIE8268, 826810 (2012).
[CrossRef]

Semicond. Sci. Technol. (1)

Y. Zhu, H. Zhou, G. Fang, and M. Li, “Middle-ultraviolet-enhanced photodetectors based on Mg0.4Zn0.6O/ZnO homojunction with a high selectivity for 300 nm around light,” Semicond. Sci. Technol.27(6), 065003 (2012).
[CrossRef]

Solid State Commun. (2)

J. Narayan, A. K. Sharma, A. Kvit, C. Jin, J. Muth, and O. Holland, “Novel cubic ZnxMg1−xO epitaxial heterostructures on Si (100) substrates,” Solid State Commun.121(1), 9–13 (2001).
[CrossRef]

L. Wang, Z. Ju, C. Shan, J. Zheng, D. Shen, B. Yao, D. Zhao, Z. Zhang, B. Li, and J. Zhang, “MgZnO metal–semiconductor–metal structured solar-blind photodetector with fast response,” Solid State Commun.149(45-46), 2021–2023 (2009).
[CrossRef]

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D. Crouse and R. Solomon, “Numerical modeling of surface plasmon enhanced silicon on insulator avalanche photodiodes,” Solid-State Electron.49(10), 1697–1701 (2005).
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G. Guarino, W. Donaldson, M. Mikulics, M. Marso, P. Kordoš, and R. Sobolewski, “Finite element simulation of metal–semiconductor–metal photodetector,” Solid-State Electron.53(10), 1144–1148 (2009).
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S. M. Sze, Physics of Semiconductor Devices (Wiley, 1981.)

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Figures (7)

Fig. 1
Fig. 1

(a) Layout of basic MSM structure (b) Unit cells of conventional, semicircular and triangular electrodes structure

Fig. 2
Fig. 2

Schematic diagram of light reflection by (a) semicircular electrode, (b) triangular electrode

Fig. 3
Fig. 3

Measured dark current of the detector, the inset shows comparison of simulated dark current of conventional electrode ZnO and MgZnO MSM photodetector with experimental data.

Fig. 4
Fig. 4

Comparison of calculated responsivity with experimental data under 3V bias.

Fig. 5
Fig. 5

Electric field distribution at 3 V applied voltage

Fig. 6
Fig. 6

Photocurrent curves of the MSM PDs with 2 μm finger width, different electrode structures and finger spacing (a) s=2μm , (b) s=3μm , (c) s=4μm ,(d) s=5μm

Fig. 7
Fig. 7

Electron, hole and total photocurrent for conventional electrode device: (a) w=2μm, s=2μm , (b) w=2μm,s=3μm ; Total photocurrent of different electrode detectors: (c) w=2μm,s=2μm , (d) w=2μm,s=3μm

Equations (22)

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2 φ( x,y,t ) x 2 + 2 φ( x,y,t ) y 2 = e ε [ p( x,y,t )n( x,y,t )+ N D + N A ]
n( x,y,t ) t = 1 e ( J n ( x,y,t ) x + J n ( x,y,t ) y )+ G n ( x,y,t ) R n ( x,y,t )
p( x,y,t ) t = 1 e ( J p ( x,y,t ) x + J p ( x,y,t ) y )+ G p ( x,y,t ) R p ( x,y,t )
J nx ( x,y,t )=e μ n n( x,y,t ) E nx ( x,y,t )+e D n n( x,y,t ) x
J ny ( x,y,t )=e μ n n( x,y,t ) E ny ( x,y,t )+e D n n( x,y,t ) y
J px ( x,y,t )=e μ p p( x,y,t ) E px ( x,y,t )e D p p( x,y,t ) x
J py ( x,y,t )=e μ p p( x,y,t ) E py ( x,y,t )e D p p( x,y,t ) y
G= P opt hν s s+w (1r)α(λ)exp(α(λ)d)
β=θ
2β+( 90 ° γ )= 180 °
tanγ tanθ = h/(n+1)a h/a = 1 n+1
cosθ= ( n1 )/2n
η= 2a na = 2 n
cosθ= 1+ 1+8 ( n+1 ) 2 4( n+1 )
η= 2a( 1cosθ ) na = 2( 1cosθ ) n
G =( 1+η )G
φ= φ b + φ app φ s
J n =e v n ( n n 0 )
J p =e v p ( p p 0 )
E=φ
n( x,y,t+Δt )=n( x,y,t )+[ J n ( x,y,t )+ G n ( x,y,t ) R n ( x,y,t ) ]Δt
p( x,y,t+Δt )=p( x,y,t )+[ J p ( x,y,t )+ G p ( x,y,t ) R p ( x,y,t ) ]Δt

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