Abstract

The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)].

© 2013 OSA

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References

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  1. Z.-H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir, “Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer,” Opt. Express 21(4), 4958–4969 (2013).
    [Crossref] [PubMed]

2013 (1)

Demir, H. V.

Hasanov, N.

Ji, Y.

Ju, Z.

Kyaw, Z.

Liu, W.

Sun, X. W.

Tan, S. T.

Zhang, Z.-H.

Zheng, K.

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