Abstract

The errata consists of the correction to one typo of the reach-through breakdown voltage for each p-GaN/n-GaN/p-GaN junction [Opt. Express 21, 4958-4969 (2013)].

©2013 Optical Society of America

Full Article  |  PDF Article
OSA Recommended Articles
Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer

Zi-Hui Zhang, Swee Tiam Tan, Wei Liu, Zhengang Ju, Ke Zheng, Zabu Kyaw, Yun Ji, Namig Hasanov, Xiao Wei Sun, and Hilmi Volkan Demir
Opt. Express 21(4) 4958-4969 (2013)

On the effect of N-GaN/P-GaN/N-GaN/P-GaN/N-GaN built-in junctions in the n-GaN layer for InGaN/GaN light-emitting diodes

Zabu Kyaw, Zi-Hui Zhang, Wei Liu, Swee Tiam Tan, Zhen Gang Ju, Xue Liang Zhang, Yun Ji, Namig Hasanov, Binbin Zhu, Shunpeng Lu, Yiping Zhang, Xiao Wei Sun, and Hilmi Volkan Demir
Opt. Express 22(1) 809-816 (2014)

Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands

Tongbo Wei, Qingfeng Kong, Junxi Wang, Jing Li, Yiping Zeng, Guohong Wang, Jinmin Li, Yuanxun Liao, and Futing Yi
Opt. Express 19(2) 1065-1071 (2011)

References

  • View by:
  • |
  • |
  • |

  1. Z.-H. Zhang, S. T. Tan, W. Liu, Z. Ju, K. Zheng, Z. Kyaw, Y. Ji, N. Hasanov, X. W. Sun, and H. V. Demir, “Improved InGaN/GaN light-emitting diodes with a p-GaN/n-GaN/p-GaN/n-GaN/p-GaN current-spreading layer,” Opt. Express 21(4), 4958–4969 (2013).
    [Crossref] [PubMed]

2013 (1)

Demir, H. V.

Hasanov, N.

Ji, Y.

Ju, Z.

Kyaw, Z.

Liu, W.

Sun, X. W.

Tan, S. T.

Zhang, Z.-H.

Zheng, K.

Cited By

OSA participates in Crossref's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Metrics