Abstract

This study presents the crystalline and luminescence properties of silicon-rich oxide (SRO)/SiO2 superlattices in which the SRO layers were prepared with a low-energy (<60 eV) argon ion-beam treatment. Experimental results evidenced that density of the Si nanocrystals (NCs) in the SRO layer was increased by ion-beam treatment after annealing, increasing the surface roughness. The stoichiometry of the as-prepared SRO layer was unchanged but the phase separation of the annealed SRO layer was enhanced by the ion-beam treatment, yielding visible white photoluminescence from the E’ centers and Si NCs.

© 2013 OSA

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    [Crossref]
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2013 (1)

2012 (2)

C. C. Tu, Q. Zhang, L. Y. Lin, and G. Cao, “Brightly photoluminescent phosphor materials based on silicon quantum dots with oxide shell passivation,” Opt. Express 20(S1), A69–A74 (2012).
[Crossref] [PubMed]

C. K. Tseng, M. C. M. Lee, H. W. Hung, J. R. Huang, K. Y. Lee, J. M. Shieh, and G. R. Lin, “Silicon-nanocrystal resonant-cavity light emitting devices for color tailoring,” J. Appl. Phys. 111(7), 074512 (2012).
[Crossref]

2011 (3)

2010 (2)

C. C. Lee and S. L. Ku, “Optical and structural properties of SiOx films from ion-assisted deposition,” Thin Solid Films 518(17), 4804–4808 (2010).
[Crossref]

G. R. Lin, Y. H. Pai, C. T. Lin, and C. C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett. 96(26), 263514 (2010).
[Crossref]

2008 (1)

H. L. Hao, L. K. Wu, and W. Z. Shen, “Controlling the red luminescence from silicon quantum dots in hydrogenated amorphous silicon nitride films,” Appl. Phys. Lett. 92(12), 121922 (2008).
[Crossref]

2007 (2)

R. Huang, K. Chen, H. Dong, D. Wang, H. Ding, W. Li, J. Xu, Z. Ma, and L. Xu, “Enhanced electroluminescence efficiency of oxidized amorphous silicon nitride light-emitting devices by modulating Si/N ratio,” Appl. Phys. Lett. 91(11), 111104 (2007).
[Crossref]

M. C. Kim, S. Kim, S. H. Choi, and S. Park, “Anomalous light-induced enhancement of photoluminescence from Si nanocrystals fabricated by thermal oxidation of amorphous Si,” Appl. Phys. Lett. 91(3), 033111 (2007).
[Crossref]

2006 (1)

M. Kulakci, U. Serincan, and R. Turan, “Electroluminescence generated by a metal oxide semiconductor light emitting diode (MOS-LED) with Si nanocrystals embedded in SiO2 layers by ion implantation,” Semicond. Sci. Technol. 21(12), 1527–1532 (2006).
[Crossref]

2005 (1)

G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys. 97(9), 094306 (2005).
[Crossref]

2004 (1)

J. K. Kim, K. M. Cha, J. H. Kang, Y. Kim, J. Y. Yi, T. H. Chung, and H. J. Bark, “Area-selective formation of Si nanocrystals by assisted ion-beam irradiation during dual-ion-beam deposition,” Appl. Phys. Lett. 85(9), 1595 (2004).
[Crossref]

2001 (1)

N. M. Park, T. S. Kim, and S. J. Park, “Band gap engineering of amorphous silicon quantum dots for light-emitting diodes,” Appl. Phys. Lett. 78(17), 2575–2577 (2001).
[Crossref]

1997 (2)

M. Fukuda, K. Nakagawa, S. Miyazaki, and M. Hirose, “Resonant tunneling through a self-assembled Si quantum dot,” Appl. Phys. Lett. 70(17), 2291–2293 (1997).
[Crossref]

W. Ensinger, “Low energy ion assist during deposition - an effective tool for controlling thin film microstructure,” Nucl. Instrum. Methods Phys. Res. 127–128, 796–808 (1997).

1995 (1)

H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, “Photoluminescence study of defects in ion-implanted thermal SiO2 films,” J. Appl. Phys. 78(2), 842–846 (1995).
[Crossref]

1969 (1)

P. Sigmund, “Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets,” Phys. Rev. 184(2), 383–416 (1969).
[Crossref]

Anopchenko, A.

D. Di, I. Perez-Wurfl, L. Wu, Y. Huang, A. Marconi, A. Tengattini, A. Anopchenko, L. Pavesi, and G. Conibeer, “Electroluminescence from Si nanocrystal/c-Si heterojunction light-emitting diodes,” Appl. Phys. Lett. 99(25), 251113 (2011).
[Crossref]

Bark, H. J.

J. K. Kim, K. M. Cha, J. H. Kang, Y. Kim, J. Y. Yi, T. H. Chung, and H. J. Bark, “Area-selective formation of Si nanocrystals by assisted ion-beam irradiation during dual-ion-beam deposition,” Appl. Phys. Lett. 85(9), 1595 (2004).
[Crossref]

Berencén, Y.

Berg, R. W.

Cao, G.

Carreras, J.

Cha, K. M.

J. K. Kim, K. M. Cha, J. H. Kang, Y. Kim, J. Y. Yi, T. H. Chung, and H. J. Bark, “Area-selective formation of Si nanocrystals by assisted ion-beam irradiation during dual-ion-beam deposition,” Appl. Phys. Lett. 85(9), 1595 (2004).
[Crossref]

Chen, C. C.

G. R. Lin, Y. H. Pai, C. T. Lin, and C. C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett. 96(26), 263514 (2010).
[Crossref]

Chen, K.

R. Huang, K. Chen, H. Dong, D. Wang, H. Ding, W. Li, J. Xu, Z. Ma, and L. Xu, “Enhanced electroluminescence efficiency of oxidized amorphous silicon nitride light-emitting devices by modulating Si/N ratio,” Appl. Phys. Lett. 91(11), 111104 (2007).
[Crossref]

Cheng, C. H.

Choi, S. H.

M. C. Kim, S. Kim, S. H. Choi, and S. Park, “Anomalous light-induced enhancement of photoluminescence from Si nanocrystals fabricated by thermal oxidation of amorphous Si,” Appl. Phys. Lett. 91(3), 033111 (2007).
[Crossref]

Chou, L. J.

G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys. 97(9), 094306 (2005).
[Crossref]

Chueh, Y. L.

G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys. 97(9), 094306 (2005).
[Crossref]

Chung, T. H.

J. K. Kim, K. M. Cha, J. H. Kang, Y. Kim, J. Y. Yi, T. H. Chung, and H. J. Bark, “Area-selective formation of Si nanocrystals by assisted ion-beam irradiation during dual-ion-beam deposition,” Appl. Phys. Lett. 85(9), 1595 (2004).
[Crossref]

Conibeer, G.

D. Di, I. Perez-Wurfl, L. Wu, Y. Huang, A. Marconi, A. Tengattini, A. Anopchenko, L. Pavesi, and G. Conibeer, “Electroluminescence from Si nanocrystal/c-Si heterojunction light-emitting diodes,” Appl. Phys. Lett. 99(25), 251113 (2011).
[Crossref]

Di, D.

D. Di, I. Perez-Wurfl, L. Wu, Y. Huang, A. Marconi, A. Tengattini, A. Anopchenko, L. Pavesi, and G. Conibeer, “Electroluminescence from Si nanocrystal/c-Si heterojunction light-emitting diodes,” Appl. Phys. Lett. 99(25), 251113 (2011).
[Crossref]

Ding, H.

R. Huang, K. Chen, H. Dong, D. Wang, H. Ding, W. Li, J. Xu, Z. Ma, and L. Xu, “Enhanced electroluminescence efficiency of oxidized amorphous silicon nitride light-emitting devices by modulating Si/N ratio,” Appl. Phys. Lett. 91(11), 111104 (2007).
[Crossref]

Domínguez, C.

Dong, H.

R. Huang, K. Chen, H. Dong, D. Wang, H. Ding, W. Li, J. Xu, Z. Ma, and L. Xu, “Enhanced electroluminescence efficiency of oxidized amorphous silicon nitride light-emitting devices by modulating Si/N ratio,” Appl. Phys. Lett. 91(11), 111104 (2007).
[Crossref]

Ensinger, W.

W. Ensinger, “Low energy ion assist during deposition - an effective tool for controlling thin film microstructure,” Nucl. Instrum. Methods Phys. Res. 127–128, 796–808 (1997).

Fukuda, M.

M. Fukuda, K. Nakagawa, S. Miyazaki, and M. Hirose, “Resonant tunneling through a self-assembled Si quantum dot,” Appl. Phys. Lett. 70(17), 2291–2293 (1997).
[Crossref]

Garrido, B.

Hao, H. L.

H. L. Hao, L. K. Wu, and W. Z. Shen, “Controlling the red luminescence from silicon quantum dots in hydrogenated amorphous silicon nitride films,” Appl. Phys. Lett. 92(12), 121922 (2008).
[Crossref]

Hirose, M.

M. Fukuda, K. Nakagawa, S. Miyazaki, and M. Hirose, “Resonant tunneling through a self-assembled Si quantum dot,” Appl. Phys. Lett. 70(17), 2291–2293 (1997).
[Crossref]

Huang, J. R.

C. K. Tseng, M. C. M. Lee, H. W. Hung, J. R. Huang, K. Y. Lee, J. M. Shieh, and G. R. Lin, “Silicon-nanocrystal resonant-cavity light emitting devices for color tailoring,” J. Appl. Phys. 111(7), 074512 (2012).
[Crossref]

Huang, R.

R. Huang, K. Chen, H. Dong, D. Wang, H. Ding, W. Li, J. Xu, Z. Ma, and L. Xu, “Enhanced electroluminescence efficiency of oxidized amorphous silicon nitride light-emitting devices by modulating Si/N ratio,” Appl. Phys. Lett. 91(11), 111104 (2007).
[Crossref]

Huang, Y.

D. Di, I. Perez-Wurfl, L. Wu, Y. Huang, A. Marconi, A. Tengattini, A. Anopchenko, L. Pavesi, and G. Conibeer, “Electroluminescence from Si nanocrystal/c-Si heterojunction light-emitting diodes,” Appl. Phys. Lett. 99(25), 251113 (2011).
[Crossref]

Hung, H. W.

C. K. Tseng, M. C. M. Lee, H. W. Hung, J. R. Huang, K. Y. Lee, J. M. Shieh, and G. R. Lin, “Silicon-nanocrystal resonant-cavity light emitting devices for color tailoring,” J. Appl. Phys. 111(7), 074512 (2012).
[Crossref]

Hunt, C. E.

Ieki, A.

H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, “Photoluminescence study of defects in ion-implanted thermal SiO2 films,” J. Appl. Phys. 78(2), 842–846 (1995).
[Crossref]

Ito, D.

H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, “Photoluminescence study of defects in ion-implanted thermal SiO2 films,” J. Appl. Phys. 78(2), 842–846 (1995).
[Crossref]

Jambois, O.

Jokubavicius, V.

Kamiyama, S.

Kang, J. H.

J. K. Kim, K. M. Cha, J. H. Kang, Y. Kim, J. Y. Yi, T. H. Chung, and H. J. Bark, “Area-selective formation of Si nanocrystals by assisted ion-beam irradiation during dual-ion-beam deposition,” Appl. Phys. Lett. 85(9), 1595 (2004).
[Crossref]

Kim, J. K.

J. K. Kim, K. M. Cha, J. H. Kang, Y. Kim, J. Y. Yi, T. H. Chung, and H. J. Bark, “Area-selective formation of Si nanocrystals by assisted ion-beam irradiation during dual-ion-beam deposition,” Appl. Phys. Lett. 85(9), 1595 (2004).
[Crossref]

Kim, M. C.

M. C. Kim, S. Kim, S. H. Choi, and S. Park, “Anomalous light-induced enhancement of photoluminescence from Si nanocrystals fabricated by thermal oxidation of amorphous Si,” Appl. Phys. Lett. 91(3), 033111 (2007).
[Crossref]

Kim, S.

M. C. Kim, S. Kim, S. H. Choi, and S. Park, “Anomalous light-induced enhancement of photoluminescence from Si nanocrystals fabricated by thermal oxidation of amorphous Si,” Appl. Phys. Lett. 91(3), 033111 (2007).
[Crossref]

Kim, T. S.

N. M. Park, T. S. Kim, and S. J. Park, “Band gap engineering of amorphous silicon quantum dots for light-emitting diodes,” Appl. Phys. Lett. 78(17), 2575–2577 (2001).
[Crossref]

Kim, Y.

J. K. Kim, K. M. Cha, J. H. Kang, Y. Kim, J. Y. Yi, T. H. Chung, and H. J. Bark, “Area-selective formation of Si nanocrystals by assisted ion-beam irradiation during dual-ion-beam deposition,” Appl. Phys. Lett. 85(9), 1595 (2004).
[Crossref]

Ku, S. L.

C. C. Lee and S. L. Ku, “Optical and structural properties of SiOx films from ion-assisted deposition,” Thin Solid Films 518(17), 4804–4808 (2010).
[Crossref]

Kulakci, M.

M. Kulakci, U. Serincan, and R. Turan, “Electroluminescence generated by a metal oxide semiconductor light emitting diode (MOS-LED) with Si nanocrystals embedded in SiO2 layers by ion implantation,” Semicond. Sci. Technol. 21(12), 1527–1532 (2006).
[Crossref]

Lee, C. C.

C. C. Lee and S. L. Ku, “Optical and structural properties of SiOx films from ion-assisted deposition,” Thin Solid Films 518(17), 4804–4808 (2010).
[Crossref]

Lee, K. Y.

C. K. Tseng, M. C. M. Lee, H. W. Hung, J. R. Huang, K. Y. Lee, J. M. Shieh, and G. R. Lin, “Silicon-nanocrystal resonant-cavity light emitting devices for color tailoring,” J. Appl. Phys. 111(7), 074512 (2012).
[Crossref]

Lee, M. C. M.

C. K. Tseng, M. C. M. Lee, H. W. Hung, J. R. Huang, K. Y. Lee, J. M. Shieh, and G. R. Lin, “Silicon-nanocrystal resonant-cavity light emitting devices for color tailoring,” J. Appl. Phys. 111(7), 074512 (2012).
[Crossref]

Li, W.

R. Huang, K. Chen, H. Dong, D. Wang, H. Ding, W. Li, J. Xu, Z. Ma, and L. Xu, “Enhanced electroluminescence efficiency of oxidized amorphous silicon nitride light-emitting devices by modulating Si/N ratio,” Appl. Phys. Lett. 91(11), 111104 (2007).
[Crossref]

Lien, Y. C.

Lin, C. J.

G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys. 97(9), 094306 (2005).
[Crossref]

Lin, C. K.

G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys. 97(9), 094306 (2005).
[Crossref]

Lin, C. T.

G. R. Lin, Y. H. Pai, C. T. Lin, and C. C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett. 96(26), 263514 (2010).
[Crossref]

Lin, G. R.

C. H. Cheng, Y. C. Lien, C. L. Wu, and G. R. Lin, “Mutlicolor electroluminescent Si quantum dots embedded in SiOx thin film MOSLED with 2.4% external quantum efficiency,” Opt. Express 21(1), 391–403 (2013).
[Crossref] [PubMed]

C. K. Tseng, M. C. M. Lee, H. W. Hung, J. R. Huang, K. Y. Lee, J. M. Shieh, and G. R. Lin, “Silicon-nanocrystal resonant-cavity light emitting devices for color tailoring,” J. Appl. Phys. 111(7), 074512 (2012).
[Crossref]

G. R. Lin, Y. H. Pai, C. T. Lin, and C. C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett. 96(26), 263514 (2010).
[Crossref]

G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys. 97(9), 094306 (2005).
[Crossref]

Lin, L. Y.

Linnarsson, M.

Liu, C.

Ma, Z.

R. Huang, K. Chen, H. Dong, D. Wang, H. Ding, W. Li, J. Xu, Z. Ma, and L. Xu, “Enhanced electroluminescence efficiency of oxidized amorphous silicon nitride light-emitting devices by modulating Si/N ratio,” Appl. Phys. Lett. 91(11), 111104 (2007).
[Crossref]

Marconi, A.

D. Di, I. Perez-Wurfl, L. Wu, Y. Huang, A. Marconi, A. Tengattini, A. Anopchenko, L. Pavesi, and G. Conibeer, “Electroluminescence from Si nanocrystal/c-Si heterojunction light-emitting diodes,” Appl. Phys. Lett. 99(25), 251113 (2011).
[Crossref]

Miyazaki, S.

M. Fukuda, K. Nakagawa, S. Miyazaki, and M. Hirose, “Resonant tunneling through a self-assembled Si quantum dot,” Appl. Phys. Lett. 70(17), 2291–2293 (1997).
[Crossref]

Nakagawa, K.

M. Fukuda, K. Nakagawa, S. Miyazaki, and M. Hirose, “Resonant tunneling through a self-assembled Si quantum dot,” Appl. Phys. Lett. 70(17), 2291–2293 (1997).
[Crossref]

Nishikawa, H.

H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, “Photoluminescence study of defects in ion-implanted thermal SiO2 films,” J. Appl. Phys. 78(2), 842–846 (1995).
[Crossref]

Ohki, Y.

H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, “Photoluminescence study of defects in ion-implanted thermal SiO2 films,” J. Appl. Phys. 78(2), 842–846 (1995).
[Crossref]

Ou, H.

Ou, Y.

Pai, Y. H.

G. R. Lin, Y. H. Pai, C. T. Lin, and C. C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett. 96(26), 263514 (2010).
[Crossref]

Park, N. M.

N. M. Park, T. S. Kim, and S. J. Park, “Band gap engineering of amorphous silicon quantum dots for light-emitting diodes,” Appl. Phys. Lett. 78(17), 2575–2577 (2001).
[Crossref]

Park, S.

M. C. Kim, S. Kim, S. H. Choi, and S. Park, “Anomalous light-induced enhancement of photoluminescence from Si nanocrystals fabricated by thermal oxidation of amorphous Si,” Appl. Phys. Lett. 91(3), 033111 (2007).
[Crossref]

Park, S. J.

N. M. Park, T. S. Kim, and S. J. Park, “Band gap engineering of amorphous silicon quantum dots for light-emitting diodes,” Appl. Phys. Lett. 78(17), 2575–2577 (2001).
[Crossref]

Pavesi, L.

D. Di, I. Perez-Wurfl, L. Wu, Y. Huang, A. Marconi, A. Tengattini, A. Anopchenko, L. Pavesi, and G. Conibeer, “Electroluminescence from Si nanocrystal/c-Si heterojunction light-emitting diodes,” Appl. Phys. Lett. 99(25), 251113 (2011).
[Crossref]

Perez-Wurfl, I.

D. Di, I. Perez-Wurfl, L. Wu, Y. Huang, A. Marconi, A. Tengattini, A. Anopchenko, L. Pavesi, and G. Conibeer, “Electroluminescence from Si nanocrystal/c-Si heterojunction light-emitting diodes,” Appl. Phys. Lett. 99(25), 251113 (2011).
[Crossref]

Ramírez, J. M.

Rodríguez, J. A.

Serincan, U.

M. Kulakci, U. Serincan, and R. Turan, “Electroluminescence generated by a metal oxide semiconductor light emitting diode (MOS-LED) with Si nanocrystals embedded in SiO2 layers by ion implantation,” Semicond. Sci. Technol. 21(12), 1527–1532 (2006).
[Crossref]

Shen, W. Z.

H. L. Hao, L. K. Wu, and W. Z. Shen, “Controlling the red luminescence from silicon quantum dots in hydrogenated amorphous silicon nitride films,” Appl. Phys. Lett. 92(12), 121922 (2008).
[Crossref]

Shieh, J. M.

C. K. Tseng, M. C. M. Lee, H. W. Hung, J. R. Huang, K. Y. Lee, J. M. Shieh, and G. R. Lin, “Silicon-nanocrystal resonant-cavity light emitting devices for color tailoring,” J. Appl. Phys. 111(7), 074512 (2012).
[Crossref]

Sigmund, P.

P. Sigmund, “Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets,” Phys. Rev. 184(2), 383–416 (1969).
[Crossref]

Syväjärvi, M.

Takiyama, M.

H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, “Photoluminescence study of defects in ion-implanted thermal SiO2 films,” J. Appl. Phys. 78(2), 842–846 (1995).
[Crossref]

Tengattini, A.

D. Di, I. Perez-Wurfl, L. Wu, Y. Huang, A. Marconi, A. Tengattini, A. Anopchenko, L. Pavesi, and G. Conibeer, “Electroluminescence from Si nanocrystal/c-Si heterojunction light-emitting diodes,” Appl. Phys. Lett. 99(25), 251113 (2011).
[Crossref]

Tseng, C. K.

C. K. Tseng, M. C. M. Lee, H. W. Hung, J. R. Huang, K. Y. Lee, J. M. Shieh, and G. R. Lin, “Silicon-nanocrystal resonant-cavity light emitting devices for color tailoring,” J. Appl. Phys. 111(7), 074512 (2012).
[Crossref]

Tu, C. C.

Turan, R.

M. Kulakci, U. Serincan, and R. Turan, “Electroluminescence generated by a metal oxide semiconductor light emitting diode (MOS-LED) with Si nanocrystals embedded in SiO2 layers by ion implantation,” Semicond. Sci. Technol. 21(12), 1527–1532 (2006).
[Crossref]

Wang, D.

R. Huang, K. Chen, H. Dong, D. Wang, H. Ding, W. Li, J. Xu, Z. Ma, and L. Xu, “Enhanced electroluminescence efficiency of oxidized amorphous silicon nitride light-emitting devices by modulating Si/N ratio,” Appl. Phys. Lett. 91(11), 111104 (2007).
[Crossref]

Watanabe, E.

H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, “Photoluminescence study of defects in ion-implanted thermal SiO2 films,” J. Appl. Phys. 78(2), 842–846 (1995).
[Crossref]

Wu, C. L.

Wu, L.

D. Di, I. Perez-Wurfl, L. Wu, Y. Huang, A. Marconi, A. Tengattini, A. Anopchenko, L. Pavesi, and G. Conibeer, “Electroluminescence from Si nanocrystal/c-Si heterojunction light-emitting diodes,” Appl. Phys. Lett. 99(25), 251113 (2011).
[Crossref]

Wu, L. K.

H. L. Hao, L. K. Wu, and W. Z. Shen, “Controlling the red luminescence from silicon quantum dots in hydrogenated amorphous silicon nitride films,” Appl. Phys. Lett. 92(12), 121922 (2008).
[Crossref]

Xu, J.

R. Huang, K. Chen, H. Dong, D. Wang, H. Ding, W. Li, J. Xu, Z. Ma, and L. Xu, “Enhanced electroluminescence efficiency of oxidized amorphous silicon nitride light-emitting devices by modulating Si/N ratio,” Appl. Phys. Lett. 91(11), 111104 (2007).
[Crossref]

Xu, L.

R. Huang, K. Chen, H. Dong, D. Wang, H. Ding, W. Li, J. Xu, Z. Ma, and L. Xu, “Enhanced electroluminescence efficiency of oxidized amorphous silicon nitride light-emitting devices by modulating Si/N ratio,” Appl. Phys. Lett. 91(11), 111104 (2007).
[Crossref]

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Yi, J. Y.

J. K. Kim, K. M. Cha, J. H. Kang, Y. Kim, J. Y. Yi, T. H. Chung, and H. J. Bark, “Area-selective formation of Si nanocrystals by assisted ion-beam irradiation during dual-ion-beam deposition,” Appl. Phys. Lett. 85(9), 1595 (2004).
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Zhang, Q.

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G. R. Lin, Y. H. Pai, C. T. Lin, and C. C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett. 96(26), 263514 (2010).
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D. Di, I. Perez-Wurfl, L. Wu, Y. Huang, A. Marconi, A. Tengattini, A. Anopchenko, L. Pavesi, and G. Conibeer, “Electroluminescence from Si nanocrystal/c-Si heterojunction light-emitting diodes,” Appl. Phys. Lett. 99(25), 251113 (2011).
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R. Huang, K. Chen, H. Dong, D. Wang, H. Ding, W. Li, J. Xu, Z. Ma, and L. Xu, “Enhanced electroluminescence efficiency of oxidized amorphous silicon nitride light-emitting devices by modulating Si/N ratio,” Appl. Phys. Lett. 91(11), 111104 (2007).
[Crossref]

J. K. Kim, K. M. Cha, J. H. Kang, Y. Kim, J. Y. Yi, T. H. Chung, and H. J. Bark, “Area-selective formation of Si nanocrystals by assisted ion-beam irradiation during dual-ion-beam deposition,” Appl. Phys. Lett. 85(9), 1595 (2004).
[Crossref]

H. L. Hao, L. K. Wu, and W. Z. Shen, “Controlling the red luminescence from silicon quantum dots in hydrogenated amorphous silicon nitride films,” Appl. Phys. Lett. 92(12), 121922 (2008).
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G. R. Lin, C. J. Lin, C. K. Lin, L. J. Chou, and Y. L. Chueh, “Oxygen defect and Si nanocrystal dependent white-light and near-infrared electroluminescence of Si-implanted and plasma-enhanced chemical-vapor deposition-grown Si-rich SiO2,” J. Appl. Phys. 97(9), 094306 (2005).
[Crossref]

H. Nishikawa, E. Watanabe, D. Ito, M. Takiyama, A. Ieki, and Y. Ohki, “Photoluminescence study of defects in ion-implanted thermal SiO2 films,” J. Appl. Phys. 78(2), 842–846 (1995).
[Crossref]

C. K. Tseng, M. C. M. Lee, H. W. Hung, J. R. Huang, K. Y. Lee, J. M. Shieh, and G. R. Lin, “Silicon-nanocrystal resonant-cavity light emitting devices for color tailoring,” J. Appl. Phys. 111(7), 074512 (2012).
[Crossref]

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Opt. Express (3)

Opt. Mater. Express (1)

Phys. Rev. (1)

P. Sigmund, “Theory of Sputtering. I. Sputtering Yield of Amorphous and Polycrystalline Targets,” Phys. Rev. 184(2), 383–416 (1969).
[Crossref]

Semicond. Sci. Technol. (1)

M. Kulakci, U. Serincan, and R. Turan, “Electroluminescence generated by a metal oxide semiconductor light emitting diode (MOS-LED) with Si nanocrystals embedded in SiO2 layers by ion implantation,” Semicond. Sci. Technol. 21(12), 1527–1532 (2006).
[Crossref]

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C. C. Lee and S. L. Ku, “Optical and structural properties of SiOx films from ion-assisted deposition,” Thin Solid Films 518(17), 4804–4808 (2010).
[Crossref]

Other (1)

S. S. Zumdahl, Chemistry, 4th ed. (Houghton Mifflin, 1997), chap. 8.

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Figures (8)

Fig. 1
Fig. 1

Illustration of two-gun sputtering system equipped with an ion source and an plasma-bridge neutralizer. By rotating substrate, 20-periods SRO/SiO2 superlattices were deposited alternatively. SRO layer was treated by low-energy Ar ion-beam just after deposition.

Fig. 2
Fig. 2

(a) (b) Bright-field and (c)(d) dark-field HR-TEM cross-section images of SRO/SiO2 films. (a) (c) 0 V ion energy, and (b)(d) 40 V anode voltages. Insets show diffraction patterns. The ion-beam incident only on the SRO layers.

Fig. 3
Fig. 3

X-ray diffraction patterns of annealed SRO/SiO2 films prepared by various anode voltages.

Fig. 4
Fig. 4

Atomic force microscopic images of SRO/SiO2 films in which SRO layers were treated by (a)(c) 0 V and (b)(d) 40 V ion-beams. (a)(b) and (c)(d) were as-prepared and annealed samples.

Fig. 5
Fig. 5

XPS spectra of Si 2p of SRO layers before (left) and after annealing (right) treated by different ion energies. XPS signals were taken from depth-profile analysis of SRO/SiO2 superlattices.

Fig. 6
Fig. 6

Atomic models of Si NCs prepared by (a) sputtering (b) sputtering with ion-beam treatment.

Fig. 7
Fig. 7

(a) PL spectra of SRO/SiO2 superlattices prepared by 0V (square) and 40V (triangle) anode voltages of ion-beams. Inset shows curve fitting results of SRO/SiO2 film prepared by 40 V ion-beam treated SRO. The white-light PL of SRO/SiO2 superlattices exited by He-Cd laser was also shown. (b) CIE chromaticity diagram of SRO/SiO2 superlattices deposited with 0 V and 40 V ion-beam treatment.

Fig. 8
Fig. 8

Electron paramagnetic resonance signals of SRO films that were prepared with ion-beam treatment and annealing.

Tables (1)

Tables Icon

Table 1 Characteristics of ion-beam-assisted SRO films (XPS) and SRO/SiO2 superlattices (roughness and XRD intensity).

Equations (1)

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Y(E)= 0.042 U b α S n (E)

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