Abstract

We demonstrate a compact all-optical Michelson interferometer (MI) gating switch with monolithic integration of two different bandgap energies. Based on the ion-induced intermixing in InGaAs/AlAsSb coupled double quantum wells, the blueshift of the band edge can be tailored. Through phosphorus ion implantation with a dose of 5 × 1014 cm–2 and subsequent annealing at 720 °C for 60 s, an implanted sample can acquire a high transmittance compared with the as-grown one. Meanwhile, the cross-phase modulation (XPM) efficiency of a non-implanted sample undergoing the same annealing process decreases little. An implanted part for signal propagation and a non-implanted section for XPM are thus monolithically integrated for an MI switch by an area-selective manner. Full switching of a π-rad nonlinear phase shift is achieved with pump pulse energy of 5.6 pJ at a 10-GHz repetition rate.

© 2013 OSA

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  1. D. Cotter, R. J. Manning, K. J. Blow, A. D. Ellis, A. E. Kelly, D. Nesset, I. D. Phillips, A. J. Poustie, and D. C. Rogers, “Nonlinear optics for high-speed digital information processing,” Science286(5444), 1523–1528 (1999).
    [CrossRef] [PubMed]
  2. T. Ogasawara, S. Gozu, T. Mozume, K. Akita, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast electron dynamics of intersubband excitation concerning crossphase modulation in an InGaAs/AlAs/AlAsSb coupled double quantum well,” Appl. Phys. Lett.98(25), 251104 (2011).
    [CrossRef]
  3. H. Tsuchida, T. Simoyama, H. Ishikawa, T. Mozume, M. Nagase, and J. Kasai, “Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells,” Opt. Lett.32(7), 751–753 (2007).
    [CrossRef] [PubMed]
  4. G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B78(7), 075308 (2008).
    [CrossRef]
  5. R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett.91(22), 221115 (2007).
    [CrossRef]
  6. R. Akimoto, G. W. Cong, T. Mozume, S. Gozu, H. Tsuchida, T. Hasama, and H. Ishikawa, “All-optical demultiplexing from 160 to 40/80 Gb/s using Mach-Zehnder switches based on intersubband transition of InGaAs/AlAsSb coupled double quantum wells,” IEICE Electron E92-C(2), 187–193 (2009).
    [CrossRef]
  7. R. Akimoto, S. Gozu, T. Mozume, and H. Ishikawa, “Monolithically integrated all-optical gate switch using intersubband transition in InGaAs/AlAsSb coupled double quantum wells,” Opt. Express19(14), 13386–13394 (2011).
    [PubMed]
  8. T. Kurosu, K. Tanizawa, S. Namiki, R. Akimoto, H. Kuwatsuka, T. Hasama, H. Ishikawa, T. Nakatogawa, K. Oyamada, Y. Tanaka, S. Ide, H. Onaka, and T. Asami, “Dynamic optical path switching in 172-Gb/s OTDM transmissions of ultra-high definition video signals using fast channel-identifiable clock recovery and integratable devices,” J. Lightwave Technol.31(4), 594–601 (2013).
    [CrossRef]
  9. J. Feng, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Ultrafast all-optical switch with cross-phase modulation by area-selective ion implantation in InGaAs/AlAsSb coupled double quantum wells,” Opt. Express20(26), B279–B287 (2012).
    [CrossRef] [PubMed]
  10. S. Gozu, T. Mozume, R. Akimoto, K. Akita, G. Cong, and H. Ishikawa, “Cross phase modulation efficiency enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 coupled double quantum wells by tailoring interband transition wavelength,” Appl. Phys. Express2, 042201 (2009).
    [CrossRef]
  11. D. Delprat, A. Ramdane, L. Silvestre, A. Ougazzaden, F. Delorme, and S. Slempkes, “20 Gb/s integrated DBR laser-EA modulator by selective area growth for 1.55 μm WDM applications,” IEEE Photon. Technol. Lett.9(7), 898–900 (1997).
    [CrossRef]
  12. S. Charbonneau, P. J. Poole, P. G. Piva, G. C. Aers, E. S. Koteles, M. Fallahi, J.-J. He, J. P. McCaffrey, M. Buchanan, M. Dion, R. D. Goldberg, and I. V. Mitchell, “Quantum-well intermixing for optoelectronic integration using high energy ion implantation,” J. Appl. Phys.78(6), 3697–3705 (1995).
    [CrossRef]
  13. V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and B. S. Ooi, “Low-energy ion-implantation-induced quantum-well intermixing,” IEEE J. Sel. Top. Quantum Electron.8(4), 870–879 (2002).
    [CrossRef]
  14. M. Paquette, V. Aimez, J. Beauvais, J. Beerens, P. J. Poole, S. Charbonneau, and A. P. Roth, “Blueshifting of InGaAsP–InP laser diodes using a low-energy ion-implantation technique: comparison between strained and Lattice-matched quantum-well structures,” IEEE J. Sel. Top. Quantum Electron.4(4), 741–745 (1998).
    [CrossRef]

2013 (1)

2012 (1)

2011 (2)

T. Ogasawara, S. Gozu, T. Mozume, K. Akita, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast electron dynamics of intersubband excitation concerning crossphase modulation in an InGaAs/AlAs/AlAsSb coupled double quantum well,” Appl. Phys. Lett.98(25), 251104 (2011).
[CrossRef]

R. Akimoto, S. Gozu, T. Mozume, and H. Ishikawa, “Monolithically integrated all-optical gate switch using intersubband transition in InGaAs/AlAsSb coupled double quantum wells,” Opt. Express19(14), 13386–13394 (2011).
[PubMed]

2009 (2)

R. Akimoto, G. W. Cong, T. Mozume, S. Gozu, H. Tsuchida, T. Hasama, and H. Ishikawa, “All-optical demultiplexing from 160 to 40/80 Gb/s using Mach-Zehnder switches based on intersubband transition of InGaAs/AlAsSb coupled double quantum wells,” IEICE Electron E92-C(2), 187–193 (2009).
[CrossRef]

S. Gozu, T. Mozume, R. Akimoto, K. Akita, G. Cong, and H. Ishikawa, “Cross phase modulation efficiency enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 coupled double quantum wells by tailoring interband transition wavelength,” Appl. Phys. Express2, 042201 (2009).
[CrossRef]

2008 (1)

G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B78(7), 075308 (2008).
[CrossRef]

2007 (2)

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett.91(22), 221115 (2007).
[CrossRef]

H. Tsuchida, T. Simoyama, H. Ishikawa, T. Mozume, M. Nagase, and J. Kasai, “Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells,” Opt. Lett.32(7), 751–753 (2007).
[CrossRef] [PubMed]

2002 (1)

V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and B. S. Ooi, “Low-energy ion-implantation-induced quantum-well intermixing,” IEEE J. Sel. Top. Quantum Electron.8(4), 870–879 (2002).
[CrossRef]

1999 (1)

D. Cotter, R. J. Manning, K. J. Blow, A. D. Ellis, A. E. Kelly, D. Nesset, I. D. Phillips, A. J. Poustie, and D. C. Rogers, “Nonlinear optics for high-speed digital information processing,” Science286(5444), 1523–1528 (1999).
[CrossRef] [PubMed]

1998 (1)

M. Paquette, V. Aimez, J. Beauvais, J. Beerens, P. J. Poole, S. Charbonneau, and A. P. Roth, “Blueshifting of InGaAsP–InP laser diodes using a low-energy ion-implantation technique: comparison between strained and Lattice-matched quantum-well structures,” IEEE J. Sel. Top. Quantum Electron.4(4), 741–745 (1998).
[CrossRef]

1997 (1)

D. Delprat, A. Ramdane, L. Silvestre, A. Ougazzaden, F. Delorme, and S. Slempkes, “20 Gb/s integrated DBR laser-EA modulator by selective area growth for 1.55 μm WDM applications,” IEEE Photon. Technol. Lett.9(7), 898–900 (1997).
[CrossRef]

1995 (1)

S. Charbonneau, P. J. Poole, P. G. Piva, G. C. Aers, E. S. Koteles, M. Fallahi, J.-J. He, J. P. McCaffrey, M. Buchanan, M. Dion, R. D. Goldberg, and I. V. Mitchell, “Quantum-well intermixing for optoelectronic integration using high energy ion implantation,” J. Appl. Phys.78(6), 3697–3705 (1995).
[CrossRef]

Aers, G. C.

S. Charbonneau, P. J. Poole, P. G. Piva, G. C. Aers, E. S. Koteles, M. Fallahi, J.-J. He, J. P. McCaffrey, M. Buchanan, M. Dion, R. D. Goldberg, and I. V. Mitchell, “Quantum-well intermixing for optoelectronic integration using high energy ion implantation,” J. Appl. Phys.78(6), 3697–3705 (1995).
[CrossRef]

Aimez, V.

V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and B. S. Ooi, “Low-energy ion-implantation-induced quantum-well intermixing,” IEEE J. Sel. Top. Quantum Electron.8(4), 870–879 (2002).
[CrossRef]

M. Paquette, V. Aimez, J. Beauvais, J. Beerens, P. J. Poole, S. Charbonneau, and A. P. Roth, “Blueshifting of InGaAsP–InP laser diodes using a low-energy ion-implantation technique: comparison between strained and Lattice-matched quantum-well structures,” IEEE J. Sel. Top. Quantum Electron.4(4), 741–745 (1998).
[CrossRef]

Akimoto, R.

T. Kurosu, K. Tanizawa, S. Namiki, R. Akimoto, H. Kuwatsuka, T. Hasama, H. Ishikawa, T. Nakatogawa, K. Oyamada, Y. Tanaka, S. Ide, H. Onaka, and T. Asami, “Dynamic optical path switching in 172-Gb/s OTDM transmissions of ultra-high definition video signals using fast channel-identifiable clock recovery and integratable devices,” J. Lightwave Technol.31(4), 594–601 (2013).
[CrossRef]

J. Feng, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Ultrafast all-optical switch with cross-phase modulation by area-selective ion implantation in InGaAs/AlAsSb coupled double quantum wells,” Opt. Express20(26), B279–B287 (2012).
[CrossRef] [PubMed]

T. Ogasawara, S. Gozu, T. Mozume, K. Akita, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast electron dynamics of intersubband excitation concerning crossphase modulation in an InGaAs/AlAs/AlAsSb coupled double quantum well,” Appl. Phys. Lett.98(25), 251104 (2011).
[CrossRef]

R. Akimoto, S. Gozu, T. Mozume, and H. Ishikawa, “Monolithically integrated all-optical gate switch using intersubband transition in InGaAs/AlAsSb coupled double quantum wells,” Opt. Express19(14), 13386–13394 (2011).
[PubMed]

S. Gozu, T. Mozume, R. Akimoto, K. Akita, G. Cong, and H. Ishikawa, “Cross phase modulation efficiency enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 coupled double quantum wells by tailoring interband transition wavelength,” Appl. Phys. Express2, 042201 (2009).
[CrossRef]

R. Akimoto, G. W. Cong, T. Mozume, S. Gozu, H. Tsuchida, T. Hasama, and H. Ishikawa, “All-optical demultiplexing from 160 to 40/80 Gb/s using Mach-Zehnder switches based on intersubband transition of InGaAs/AlAsSb coupled double quantum wells,” IEICE Electron E92-C(2), 187–193 (2009).
[CrossRef]

G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B78(7), 075308 (2008).
[CrossRef]

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett.91(22), 221115 (2007).
[CrossRef]

Akita, K.

T. Ogasawara, S. Gozu, T. Mozume, K. Akita, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast electron dynamics of intersubband excitation concerning crossphase modulation in an InGaAs/AlAs/AlAsSb coupled double quantum well,” Appl. Phys. Lett.98(25), 251104 (2011).
[CrossRef]

S. Gozu, T. Mozume, R. Akimoto, K. Akita, G. Cong, and H. Ishikawa, “Cross phase modulation efficiency enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 coupled double quantum wells by tailoring interband transition wavelength,” Appl. Phys. Express2, 042201 (2009).
[CrossRef]

Asami, T.

Beauvais, J.

V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and B. S. Ooi, “Low-energy ion-implantation-induced quantum-well intermixing,” IEEE J. Sel. Top. Quantum Electron.8(4), 870–879 (2002).
[CrossRef]

M. Paquette, V. Aimez, J. Beauvais, J. Beerens, P. J. Poole, S. Charbonneau, and A. P. Roth, “Blueshifting of InGaAsP–InP laser diodes using a low-energy ion-implantation technique: comparison between strained and Lattice-matched quantum-well structures,” IEEE J. Sel. Top. Quantum Electron.4(4), 741–745 (1998).
[CrossRef]

Beerens, J.

V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and B. S. Ooi, “Low-energy ion-implantation-induced quantum-well intermixing,” IEEE J. Sel. Top. Quantum Electron.8(4), 870–879 (2002).
[CrossRef]

M. Paquette, V. Aimez, J. Beauvais, J. Beerens, P. J. Poole, S. Charbonneau, and A. P. Roth, “Blueshifting of InGaAsP–InP laser diodes using a low-energy ion-implantation technique: comparison between strained and Lattice-matched quantum-well structures,” IEEE J. Sel. Top. Quantum Electron.4(4), 741–745 (1998).
[CrossRef]

Blow, K. J.

D. Cotter, R. J. Manning, K. J. Blow, A. D. Ellis, A. E. Kelly, D. Nesset, I. D. Phillips, A. J. Poustie, and D. C. Rogers, “Nonlinear optics for high-speed digital information processing,” Science286(5444), 1523–1528 (1999).
[CrossRef] [PubMed]

Buchanan, M.

S. Charbonneau, P. J. Poole, P. G. Piva, G. C. Aers, E. S. Koteles, M. Fallahi, J.-J. He, J. P. McCaffrey, M. Buchanan, M. Dion, R. D. Goldberg, and I. V. Mitchell, “Quantum-well intermixing for optoelectronic integration using high energy ion implantation,” J. Appl. Phys.78(6), 3697–3705 (1995).
[CrossRef]

Charbonneau, S.

M. Paquette, V. Aimez, J. Beauvais, J. Beerens, P. J. Poole, S. Charbonneau, and A. P. Roth, “Blueshifting of InGaAsP–InP laser diodes using a low-energy ion-implantation technique: comparison between strained and Lattice-matched quantum-well structures,” IEEE J. Sel. Top. Quantum Electron.4(4), 741–745 (1998).
[CrossRef]

S. Charbonneau, P. J. Poole, P. G. Piva, G. C. Aers, E. S. Koteles, M. Fallahi, J.-J. He, J. P. McCaffrey, M. Buchanan, M. Dion, R. D. Goldberg, and I. V. Mitchell, “Quantum-well intermixing for optoelectronic integration using high energy ion implantation,” J. Appl. Phys.78(6), 3697–3705 (1995).
[CrossRef]

Cong, G.

S. Gozu, T. Mozume, R. Akimoto, K. Akita, G. Cong, and H. Ishikawa, “Cross phase modulation efficiency enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 coupled double quantum wells by tailoring interband transition wavelength,” Appl. Phys. Express2, 042201 (2009).
[CrossRef]

Cong, G. W.

R. Akimoto, G. W. Cong, T. Mozume, S. Gozu, H. Tsuchida, T. Hasama, and H. Ishikawa, “All-optical demultiplexing from 160 to 40/80 Gb/s using Mach-Zehnder switches based on intersubband transition of InGaAs/AlAsSb coupled double quantum wells,” IEICE Electron E92-C(2), 187–193 (2009).
[CrossRef]

G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B78(7), 075308 (2008).
[CrossRef]

Cotter, D.

D. Cotter, R. J. Manning, K. J. Blow, A. D. Ellis, A. E. Kelly, D. Nesset, I. D. Phillips, A. J. Poustie, and D. C. Rogers, “Nonlinear optics for high-speed digital information processing,” Science286(5444), 1523–1528 (1999).
[CrossRef] [PubMed]

Delorme, F.

D. Delprat, A. Ramdane, L. Silvestre, A. Ougazzaden, F. Delorme, and S. Slempkes, “20 Gb/s integrated DBR laser-EA modulator by selective area growth for 1.55 μm WDM applications,” IEEE Photon. Technol. Lett.9(7), 898–900 (1997).
[CrossRef]

Delprat, D.

D. Delprat, A. Ramdane, L. Silvestre, A. Ougazzaden, F. Delorme, and S. Slempkes, “20 Gb/s integrated DBR laser-EA modulator by selective area growth for 1.55 μm WDM applications,” IEEE Photon. Technol. Lett.9(7), 898–900 (1997).
[CrossRef]

Dion, M.

S. Charbonneau, P. J. Poole, P. G. Piva, G. C. Aers, E. S. Koteles, M. Fallahi, J.-J. He, J. P. McCaffrey, M. Buchanan, M. Dion, R. D. Goldberg, and I. V. Mitchell, “Quantum-well intermixing for optoelectronic integration using high energy ion implantation,” J. Appl. Phys.78(6), 3697–3705 (1995).
[CrossRef]

Ellis, A. D.

D. Cotter, R. J. Manning, K. J. Blow, A. D. Ellis, A. E. Kelly, D. Nesset, I. D. Phillips, A. J. Poustie, and D. C. Rogers, “Nonlinear optics for high-speed digital information processing,” Science286(5444), 1523–1528 (1999).
[CrossRef] [PubMed]

Fallahi, M.

S. Charbonneau, P. J. Poole, P. G. Piva, G. C. Aers, E. S. Koteles, M. Fallahi, J.-J. He, J. P. McCaffrey, M. Buchanan, M. Dion, R. D. Goldberg, and I. V. Mitchell, “Quantum-well intermixing for optoelectronic integration using high energy ion implantation,” J. Appl. Phys.78(6), 3697–3705 (1995).
[CrossRef]

Feng, J.

Goldberg, R. D.

S. Charbonneau, P. J. Poole, P. G. Piva, G. C. Aers, E. S. Koteles, M. Fallahi, J.-J. He, J. P. McCaffrey, M. Buchanan, M. Dion, R. D. Goldberg, and I. V. Mitchell, “Quantum-well intermixing for optoelectronic integration using high energy ion implantation,” J. Appl. Phys.78(6), 3697–3705 (1995).
[CrossRef]

Gozu, S.

J. Feng, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Ultrafast all-optical switch with cross-phase modulation by area-selective ion implantation in InGaAs/AlAsSb coupled double quantum wells,” Opt. Express20(26), B279–B287 (2012).
[CrossRef] [PubMed]

T. Ogasawara, S. Gozu, T. Mozume, K. Akita, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast electron dynamics of intersubband excitation concerning crossphase modulation in an InGaAs/AlAs/AlAsSb coupled double quantum well,” Appl. Phys. Lett.98(25), 251104 (2011).
[CrossRef]

R. Akimoto, S. Gozu, T. Mozume, and H. Ishikawa, “Monolithically integrated all-optical gate switch using intersubband transition in InGaAs/AlAsSb coupled double quantum wells,” Opt. Express19(14), 13386–13394 (2011).
[PubMed]

S. Gozu, T. Mozume, R. Akimoto, K. Akita, G. Cong, and H. Ishikawa, “Cross phase modulation efficiency enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 coupled double quantum wells by tailoring interband transition wavelength,” Appl. Phys. Express2, 042201 (2009).
[CrossRef]

R. Akimoto, G. W. Cong, T. Mozume, S. Gozu, H. Tsuchida, T. Hasama, and H. Ishikawa, “All-optical demultiplexing from 160 to 40/80 Gb/s using Mach-Zehnder switches based on intersubband transition of InGaAs/AlAsSb coupled double quantum wells,” IEICE Electron E92-C(2), 187–193 (2009).
[CrossRef]

Hasama, T.

T. Kurosu, K. Tanizawa, S. Namiki, R. Akimoto, H. Kuwatsuka, T. Hasama, H. Ishikawa, T. Nakatogawa, K. Oyamada, Y. Tanaka, S. Ide, H. Onaka, and T. Asami, “Dynamic optical path switching in 172-Gb/s OTDM transmissions of ultra-high definition video signals using fast channel-identifiable clock recovery and integratable devices,” J. Lightwave Technol.31(4), 594–601 (2013).
[CrossRef]

J. Feng, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Ultrafast all-optical switch with cross-phase modulation by area-selective ion implantation in InGaAs/AlAsSb coupled double quantum wells,” Opt. Express20(26), B279–B287 (2012).
[CrossRef] [PubMed]

T. Ogasawara, S. Gozu, T. Mozume, K. Akita, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast electron dynamics of intersubband excitation concerning crossphase modulation in an InGaAs/AlAs/AlAsSb coupled double quantum well,” Appl. Phys. Lett.98(25), 251104 (2011).
[CrossRef]

R. Akimoto, G. W. Cong, T. Mozume, S. Gozu, H. Tsuchida, T. Hasama, and H. Ishikawa, “All-optical demultiplexing from 160 to 40/80 Gb/s using Mach-Zehnder switches based on intersubband transition of InGaAs/AlAsSb coupled double quantum wells,” IEICE Electron E92-C(2), 187–193 (2009).
[CrossRef]

G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B78(7), 075308 (2008).
[CrossRef]

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett.91(22), 221115 (2007).
[CrossRef]

He, J.-J.

S. Charbonneau, P. J. Poole, P. G. Piva, G. C. Aers, E. S. Koteles, M. Fallahi, J.-J. He, J. P. McCaffrey, M. Buchanan, M. Dion, R. D. Goldberg, and I. V. Mitchell, “Quantum-well intermixing for optoelectronic integration using high energy ion implantation,” J. Appl. Phys.78(6), 3697–3705 (1995).
[CrossRef]

Ide, S.

Ishikawa, H.

T. Kurosu, K. Tanizawa, S. Namiki, R. Akimoto, H. Kuwatsuka, T. Hasama, H. Ishikawa, T. Nakatogawa, K. Oyamada, Y. Tanaka, S. Ide, H. Onaka, and T. Asami, “Dynamic optical path switching in 172-Gb/s OTDM transmissions of ultra-high definition video signals using fast channel-identifiable clock recovery and integratable devices,” J. Lightwave Technol.31(4), 594–601 (2013).
[CrossRef]

J. Feng, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Ultrafast all-optical switch with cross-phase modulation by area-selective ion implantation in InGaAs/AlAsSb coupled double quantum wells,” Opt. Express20(26), B279–B287 (2012).
[CrossRef] [PubMed]

T. Ogasawara, S. Gozu, T. Mozume, K. Akita, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast electron dynamics of intersubband excitation concerning crossphase modulation in an InGaAs/AlAs/AlAsSb coupled double quantum well,” Appl. Phys. Lett.98(25), 251104 (2011).
[CrossRef]

R. Akimoto, S. Gozu, T. Mozume, and H. Ishikawa, “Monolithically integrated all-optical gate switch using intersubband transition in InGaAs/AlAsSb coupled double quantum wells,” Opt. Express19(14), 13386–13394 (2011).
[PubMed]

S. Gozu, T. Mozume, R. Akimoto, K. Akita, G. Cong, and H. Ishikawa, “Cross phase modulation efficiency enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 coupled double quantum wells by tailoring interband transition wavelength,” Appl. Phys. Express2, 042201 (2009).
[CrossRef]

R. Akimoto, G. W. Cong, T. Mozume, S. Gozu, H. Tsuchida, T. Hasama, and H. Ishikawa, “All-optical demultiplexing from 160 to 40/80 Gb/s using Mach-Zehnder switches based on intersubband transition of InGaAs/AlAsSb coupled double quantum wells,” IEICE Electron E92-C(2), 187–193 (2009).
[CrossRef]

G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B78(7), 075308 (2008).
[CrossRef]

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett.91(22), 221115 (2007).
[CrossRef]

H. Tsuchida, T. Simoyama, H. Ishikawa, T. Mozume, M. Nagase, and J. Kasai, “Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells,” Opt. Lett.32(7), 751–753 (2007).
[CrossRef] [PubMed]

Kasai, J.

Kelly, A. E.

D. Cotter, R. J. Manning, K. J. Blow, A. D. Ellis, A. E. Kelly, D. Nesset, I. D. Phillips, A. J. Poustie, and D. C. Rogers, “Nonlinear optics for high-speed digital information processing,” Science286(5444), 1523–1528 (1999).
[CrossRef] [PubMed]

Koteles, E. S.

S. Charbonneau, P. J. Poole, P. G. Piva, G. C. Aers, E. S. Koteles, M. Fallahi, J.-J. He, J. P. McCaffrey, M. Buchanan, M. Dion, R. D. Goldberg, and I. V. Mitchell, “Quantum-well intermixing for optoelectronic integration using high energy ion implantation,” J. Appl. Phys.78(6), 3697–3705 (1995).
[CrossRef]

Kurosu, T.

Kuwatsuka, H.

T. Kurosu, K. Tanizawa, S. Namiki, R. Akimoto, H. Kuwatsuka, T. Hasama, H. Ishikawa, T. Nakatogawa, K. Oyamada, Y. Tanaka, S. Ide, H. Onaka, and T. Asami, “Dynamic optical path switching in 172-Gb/s OTDM transmissions of ultra-high definition video signals using fast channel-identifiable clock recovery and integratable devices,” J. Lightwave Technol.31(4), 594–601 (2013).
[CrossRef]

T. Ogasawara, S. Gozu, T. Mozume, K. Akita, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast electron dynamics of intersubband excitation concerning crossphase modulation in an InGaAs/AlAs/AlAsSb coupled double quantum well,” Appl. Phys. Lett.98(25), 251104 (2011).
[CrossRef]

Lim, C. G.

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett.91(22), 221115 (2007).
[CrossRef]

Lim, H. S.

V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and B. S. Ooi, “Low-energy ion-implantation-induced quantum-well intermixing,” IEEE J. Sel. Top. Quantum Electron.8(4), 870–879 (2002).
[CrossRef]

Manning, R. J.

D. Cotter, R. J. Manning, K. J. Blow, A. D. Ellis, A. E. Kelly, D. Nesset, I. D. Phillips, A. J. Poustie, and D. C. Rogers, “Nonlinear optics for high-speed digital information processing,” Science286(5444), 1523–1528 (1999).
[CrossRef] [PubMed]

McCaffrey, J. P.

S. Charbonneau, P. J. Poole, P. G. Piva, G. C. Aers, E. S. Koteles, M. Fallahi, J.-J. He, J. P. McCaffrey, M. Buchanan, M. Dion, R. D. Goldberg, and I. V. Mitchell, “Quantum-well intermixing for optoelectronic integration using high energy ion implantation,” J. Appl. Phys.78(6), 3697–3705 (1995).
[CrossRef]

Mitchell, I. V.

S. Charbonneau, P. J. Poole, P. G. Piva, G. C. Aers, E. S. Koteles, M. Fallahi, J.-J. He, J. P. McCaffrey, M. Buchanan, M. Dion, R. D. Goldberg, and I. V. Mitchell, “Quantum-well intermixing for optoelectronic integration using high energy ion implantation,” J. Appl. Phys.78(6), 3697–3705 (1995).
[CrossRef]

Morris, D.

V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and B. S. Ooi, “Low-energy ion-implantation-induced quantum-well intermixing,” IEEE J. Sel. Top. Quantum Electron.8(4), 870–879 (2002).
[CrossRef]

Mozume, T.

J. Feng, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Ultrafast all-optical switch with cross-phase modulation by area-selective ion implantation in InGaAs/AlAsSb coupled double quantum wells,” Opt. Express20(26), B279–B287 (2012).
[CrossRef] [PubMed]

T. Ogasawara, S. Gozu, T. Mozume, K. Akita, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast electron dynamics of intersubband excitation concerning crossphase modulation in an InGaAs/AlAs/AlAsSb coupled double quantum well,” Appl. Phys. Lett.98(25), 251104 (2011).
[CrossRef]

R. Akimoto, S. Gozu, T. Mozume, and H. Ishikawa, “Monolithically integrated all-optical gate switch using intersubband transition in InGaAs/AlAsSb coupled double quantum wells,” Opt. Express19(14), 13386–13394 (2011).
[PubMed]

S. Gozu, T. Mozume, R. Akimoto, K. Akita, G. Cong, and H. Ishikawa, “Cross phase modulation efficiency enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 coupled double quantum wells by tailoring interband transition wavelength,” Appl. Phys. Express2, 042201 (2009).
[CrossRef]

R. Akimoto, G. W. Cong, T. Mozume, S. Gozu, H. Tsuchida, T. Hasama, and H. Ishikawa, “All-optical demultiplexing from 160 to 40/80 Gb/s using Mach-Zehnder switches based on intersubband transition of InGaAs/AlAsSb coupled double quantum wells,” IEICE Electron E92-C(2), 187–193 (2009).
[CrossRef]

G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B78(7), 075308 (2008).
[CrossRef]

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett.91(22), 221115 (2007).
[CrossRef]

H. Tsuchida, T. Simoyama, H. Ishikawa, T. Mozume, M. Nagase, and J. Kasai, “Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells,” Opt. Lett.32(7), 751–753 (2007).
[CrossRef] [PubMed]

Nagase, M.

G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B78(7), 075308 (2008).
[CrossRef]

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett.91(22), 221115 (2007).
[CrossRef]

H. Tsuchida, T. Simoyama, H. Ishikawa, T. Mozume, M. Nagase, and J. Kasai, “Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells,” Opt. Lett.32(7), 751–753 (2007).
[CrossRef] [PubMed]

Nakatogawa, T.

Namiki, S.

T. Kurosu, K. Tanizawa, S. Namiki, R. Akimoto, H. Kuwatsuka, T. Hasama, H. Ishikawa, T. Nakatogawa, K. Oyamada, Y. Tanaka, S. Ide, H. Onaka, and T. Asami, “Dynamic optical path switching in 172-Gb/s OTDM transmissions of ultra-high definition video signals using fast channel-identifiable clock recovery and integratable devices,” J. Lightwave Technol.31(4), 594–601 (2013).
[CrossRef]

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett.91(22), 221115 (2007).
[CrossRef]

Nesset, D.

D. Cotter, R. J. Manning, K. J. Blow, A. D. Ellis, A. E. Kelly, D. Nesset, I. D. Phillips, A. J. Poustie, and D. C. Rogers, “Nonlinear optics for high-speed digital information processing,” Science286(5444), 1523–1528 (1999).
[CrossRef] [PubMed]

Ogasawara, T.

T. Ogasawara, S. Gozu, T. Mozume, K. Akita, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast electron dynamics of intersubband excitation concerning crossphase modulation in an InGaAs/AlAs/AlAsSb coupled double quantum well,” Appl. Phys. Lett.98(25), 251104 (2011).
[CrossRef]

Onaka, H.

Ooi, B. S.

V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and B. S. Ooi, “Low-energy ion-implantation-induced quantum-well intermixing,” IEEE J. Sel. Top. Quantum Electron.8(4), 870–879 (2002).
[CrossRef]

Ougazzaden, A.

D. Delprat, A. Ramdane, L. Silvestre, A. Ougazzaden, F. Delorme, and S. Slempkes, “20 Gb/s integrated DBR laser-EA modulator by selective area growth for 1.55 μm WDM applications,” IEEE Photon. Technol. Lett.9(7), 898–900 (1997).
[CrossRef]

Oyamada, K.

Paquette, M.

M. Paquette, V. Aimez, J. Beauvais, J. Beerens, P. J. Poole, S. Charbonneau, and A. P. Roth, “Blueshifting of InGaAsP–InP laser diodes using a low-energy ion-implantation technique: comparison between strained and Lattice-matched quantum-well structures,” IEEE J. Sel. Top. Quantum Electron.4(4), 741–745 (1998).
[CrossRef]

Phillips, I. D.

D. Cotter, R. J. Manning, K. J. Blow, A. D. Ellis, A. E. Kelly, D. Nesset, I. D. Phillips, A. J. Poustie, and D. C. Rogers, “Nonlinear optics for high-speed digital information processing,” Science286(5444), 1523–1528 (1999).
[CrossRef] [PubMed]

Piva, P. G.

S. Charbonneau, P. J. Poole, P. G. Piva, G. C. Aers, E. S. Koteles, M. Fallahi, J.-J. He, J. P. McCaffrey, M. Buchanan, M. Dion, R. D. Goldberg, and I. V. Mitchell, “Quantum-well intermixing for optoelectronic integration using high energy ion implantation,” J. Appl. Phys.78(6), 3697–3705 (1995).
[CrossRef]

Poole, P. J.

M. Paquette, V. Aimez, J. Beauvais, J. Beerens, P. J. Poole, S. Charbonneau, and A. P. Roth, “Blueshifting of InGaAsP–InP laser diodes using a low-energy ion-implantation technique: comparison between strained and Lattice-matched quantum-well structures,” IEEE J. Sel. Top. Quantum Electron.4(4), 741–745 (1998).
[CrossRef]

S. Charbonneau, P. J. Poole, P. G. Piva, G. C. Aers, E. S. Koteles, M. Fallahi, J.-J. He, J. P. McCaffrey, M. Buchanan, M. Dion, R. D. Goldberg, and I. V. Mitchell, “Quantum-well intermixing for optoelectronic integration using high energy ion implantation,” J. Appl. Phys.78(6), 3697–3705 (1995).
[CrossRef]

Poustie, A. J.

D. Cotter, R. J. Manning, K. J. Blow, A. D. Ellis, A. E. Kelly, D. Nesset, I. D. Phillips, A. J. Poustie, and D. C. Rogers, “Nonlinear optics for high-speed digital information processing,” Science286(5444), 1523–1528 (1999).
[CrossRef] [PubMed]

Ramdane, A.

D. Delprat, A. Ramdane, L. Silvestre, A. Ougazzaden, F. Delorme, and S. Slempkes, “20 Gb/s integrated DBR laser-EA modulator by selective area growth for 1.55 μm WDM applications,” IEEE Photon. Technol. Lett.9(7), 898–900 (1997).
[CrossRef]

Rogers, D. C.

D. Cotter, R. J. Manning, K. J. Blow, A. D. Ellis, A. E. Kelly, D. Nesset, I. D. Phillips, A. J. Poustie, and D. C. Rogers, “Nonlinear optics for high-speed digital information processing,” Science286(5444), 1523–1528 (1999).
[CrossRef] [PubMed]

Roth, A. P.

M. Paquette, V. Aimez, J. Beauvais, J. Beerens, P. J. Poole, S. Charbonneau, and A. P. Roth, “Blueshifting of InGaAsP–InP laser diodes using a low-energy ion-implantation technique: comparison between strained and Lattice-matched quantum-well structures,” IEEE J. Sel. Top. Quantum Electron.4(4), 741–745 (1998).
[CrossRef]

Silvestre, L.

D. Delprat, A. Ramdane, L. Silvestre, A. Ougazzaden, F. Delorme, and S. Slempkes, “20 Gb/s integrated DBR laser-EA modulator by selective area growth for 1.55 μm WDM applications,” IEEE Photon. Technol. Lett.9(7), 898–900 (1997).
[CrossRef]

Simoyama, T.

H. Tsuchida, T. Simoyama, H. Ishikawa, T. Mozume, M. Nagase, and J. Kasai, “Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells,” Opt. Lett.32(7), 751–753 (2007).
[CrossRef] [PubMed]

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett.91(22), 221115 (2007).
[CrossRef]

Slempkes, S.

D. Delprat, A. Ramdane, L. Silvestre, A. Ougazzaden, F. Delorme, and S. Slempkes, “20 Gb/s integrated DBR laser-EA modulator by selective area growth for 1.55 μm WDM applications,” IEEE Photon. Technol. Lett.9(7), 898–900 (1997).
[CrossRef]

Tanaka, Y.

Tanizawa, K.

Tsuchida, H.

R. Akimoto, G. W. Cong, T. Mozume, S. Gozu, H. Tsuchida, T. Hasama, and H. Ishikawa, “All-optical demultiplexing from 160 to 40/80 Gb/s using Mach-Zehnder switches based on intersubband transition of InGaAs/AlAsSb coupled double quantum wells,” IEICE Electron E92-C(2), 187–193 (2009).
[CrossRef]

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett.91(22), 221115 (2007).
[CrossRef]

H. Tsuchida, T. Simoyama, H. Ishikawa, T. Mozume, M. Nagase, and J. Kasai, “Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells,” Opt. Lett.32(7), 751–753 (2007).
[CrossRef] [PubMed]

Appl. Phys. Express (1)

S. Gozu, T. Mozume, R. Akimoto, K. Akita, G. Cong, and H. Ishikawa, “Cross phase modulation efficiency enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 coupled double quantum wells by tailoring interband transition wavelength,” Appl. Phys. Express2, 042201 (2009).
[CrossRef]

Appl. Phys. Lett. (2)

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett.91(22), 221115 (2007).
[CrossRef]

T. Ogasawara, S. Gozu, T. Mozume, K. Akita, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast electron dynamics of intersubband excitation concerning crossphase modulation in an InGaAs/AlAs/AlAsSb coupled double quantum well,” Appl. Phys. Lett.98(25), 251104 (2011).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (2)

V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and B. S. Ooi, “Low-energy ion-implantation-induced quantum-well intermixing,” IEEE J. Sel. Top. Quantum Electron.8(4), 870–879 (2002).
[CrossRef]

M. Paquette, V. Aimez, J. Beauvais, J. Beerens, P. J. Poole, S. Charbonneau, and A. P. Roth, “Blueshifting of InGaAsP–InP laser diodes using a low-energy ion-implantation technique: comparison between strained and Lattice-matched quantum-well structures,” IEEE J. Sel. Top. Quantum Electron.4(4), 741–745 (1998).
[CrossRef]

IEEE Photon. Technol. Lett. (1)

D. Delprat, A. Ramdane, L. Silvestre, A. Ougazzaden, F. Delorme, and S. Slempkes, “20 Gb/s integrated DBR laser-EA modulator by selective area growth for 1.55 μm WDM applications,” IEEE Photon. Technol. Lett.9(7), 898–900 (1997).
[CrossRef]

IEICE Electron (1)

R. Akimoto, G. W. Cong, T. Mozume, S. Gozu, H. Tsuchida, T. Hasama, and H. Ishikawa, “All-optical demultiplexing from 160 to 40/80 Gb/s using Mach-Zehnder switches based on intersubband transition of InGaAs/AlAsSb coupled double quantum wells,” IEICE Electron E92-C(2), 187–193 (2009).
[CrossRef]

J. Appl. Phys. (1)

S. Charbonneau, P. J. Poole, P. G. Piva, G. C. Aers, E. S. Koteles, M. Fallahi, J.-J. He, J. P. McCaffrey, M. Buchanan, M. Dion, R. D. Goldberg, and I. V. Mitchell, “Quantum-well intermixing for optoelectronic integration using high energy ion implantation,” J. Appl. Phys.78(6), 3697–3705 (1995).
[CrossRef]

J. Lightwave Technol. (1)

Opt. Express (2)

Opt. Lett. (1)

Phys. Rev. B (1)

G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B78(7), 075308 (2008).
[CrossRef]

Science (1)

D. Cotter, R. J. Manning, K. J. Blow, A. D. Ellis, A. E. Kelly, D. Nesset, I. D. Phillips, A. J. Poustie, and D. C. Rogers, “Nonlinear optics for high-speed digital information processing,” Science286(5444), 1523–1528 (1999).
[CrossRef] [PubMed]

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Figures (4)

Fig. 1
Fig. 1

(a) TE Spectra property (inset: TM spectra) and (b) peak nonlinear phase shift as a function of TM pump power, for 1.3-μm-wide waveguides of the implanted and as-grown samples with or without RTA.

Fig. 2
Fig. 2

(a) Schematic diagram of a monolithically integrated ISBT-MI switch. MMI: multi-mode interference; VOA: variable optical attenuator; MZI: Mach-Zehnder interferometer. (b) Microscope image of the fabricated chip for test.

Fig. 3
Fig. 3

(a) Simulated MZI cross-port output and the measured values normalized by the straight waveguide transmittance with varying MMI length. (b) Transmission spectra for the MMI 3-dB coupler (inset: normalized MZI spectra).

Fig. 4
Fig. 4

(a) Signal transmittance as a function of the voltage applied to the phase bias control heater. (b) Temporal profile of the gated TE probe light.

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