Abstract

We report on the design, fabrication and characterization of electrically pumped vertical external cavity surface emitting lasers (EP-VECSELs) emitting at 1470 nm. We demonstrate 6.2 mW of CW output power, which represents the highest power value reported so far for EP-VECSELs in the 14XX nm and 15XX nm wavelength bands.

© 2013 OSA

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  1. A. Chamorovskiy, J. Rautiainen, J. Lyytikäinen, S. Ranta, M. Tavast, A. Sirbu, E. Kapon, and O. G. Okhotnikov, “Raman fiber laser pumped by a semiconductor disk laser and mode locked by a semiconductor saturable absorber mirror,” Opt. Lett.35(20), 3529–3531 (2010).
    [CrossRef] [PubMed]
  2. A. Chamorovskiy, A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “1.38-µm mode-locked Raman fiber laser pumped by semiconductor disk laser,” Opt. Express18(23), 23872–23877 (2010).
    [CrossRef] [PubMed]
  3. R. Lauder, “Technology and economics for coarse wavelength multiplexing workshop,” http://ieeexplore.ieee.org (2004).
  4. E. Kapon and A. Sirbu, “Long wavelength VCSELs: power efficient answer,” Nat. Photonics3(1), 27–29 (2009).
    [CrossRef]
  5. A. Sirbu, V. Iakovelv, A. Mereuta, A. Caliman, G. Suruceanu, and E. Kapon, “Wafer-fused hetero-structures: application to vertical cavity surface-emitting lasers emitting in the 1310 nm band,” Semicond. Sci. Technol.26(1), 014016 (2011).
    [CrossRef]
  6. G. Baili, F. Bretenaker, M. Alouini, L. Morvan, D. Dolfi, and I. Sagnes, “Experimental Investigation and Analytical Modeling of Excess Intensity Noise in Semiconductor Class-A Lasers,” J. Lightwave Technol.26(8), 952–961 (2008).
    [CrossRef]
  7. V. Pal, P. Trofimoff, B.-X. Miranda, G. Baili, M. Alouini, L. Morvan, D. Dolfi, F. Goldfarb, I. Sagnes, R. Ghosh, and F. Bretenaker, “Measurement of the coupling constant in a two-frequency VECSEL,” Opt. Express18(5), 5008–5014 (2010).
    [CrossRef] [PubMed]
  8. M. Alouini, B. Benazet, M. Vallet, M. Brunel, P. Di Bin, F. Bretenaker, A. Le Floch, and P. Thony, “Offset phase locking of Er:Yb:Glass laser eigenstates for RF photonics applications,” IEEE Photon. Technol. Lett.13(4), 367–369 (2001).
    [CrossRef]
  9. S. Tonda-Goldstein, D. Dolfi, A. Monsterleet, S. Formont, J. Chazelas, and J.-P. Huignard, “Optical signal processing in radar systems,” IEEE Trans. Microw. Theory Tech.54(2), 847–853 (2006).
    [CrossRef]
  10. A. Caliman, A. Mereuta, G. Suruceanu, V. Iakovlev, A. Sirbu, and E. Kapon, “8 mW fundamental mode output of wafer-fused VCSELs emitting in the 1550-nm band,” Opt. Express19(18), 16996–17001 (2011).
    [CrossRef] [PubMed]
  11. A. Rantamäki, J. Rautiainen, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “1.56 µm 1 watt single frequency semiconductor disk laser,” Opt. Express21(2), 2355–2360 (2013).
    [CrossRef] [PubMed]
  12. J. G. McInerney, A. Mooradian, A. Lewis, A. V. Shchegrov, E. M. Strzelecka, D. Lee, J. P. Watson, M. Liebman, G. P. Carey, B. D. Cantos, W. R. Hitchens, and D. Heald, “High-power surface emitting semiconductor laser with extended vertical compound cavity,” Electron. Lett.39(6), 523–525 (2003).
    [CrossRef]
  13. Y. Barbarin, M. Hoffmann, W. P. Pallmann, I. Dahhan, P. Kreuter, M. Miller, J. Baier, H. Moench, M. Golling, T. Südmeyer, B. Witzigmann, and U. Keller, “Electrically pumped vertical external cavity surface emitting lasers suitable for passive modelocking,” IEEE J. Sel. Top. Quantum Electron.17(6), 1779–1786 (2011).
    [CrossRef]
  14. A. Bousseksou, S. Bouchoule, M. E. Kurdi, M. Strassner, I. Sagnes, P. Crozat, and J. Jacquet, “Fabrication and characterization of 1.55 μm single transverse mode large diameter electrically pumped VECSEL,” Opt. Quantum Electron.38(15), 1269–1278 (2007).
    [CrossRef]
  15. W. Hofmann, N. H. Zhu, M. Ortsiefer, G. Bohm, J. Rosskopf, L. Chao, S. Zhang, M. Maute, and M.-C. Amann, “10-Gb/s data transmission using BSB passivated 1.55- μm InGaAlAs-InP VCSELs,” IEEE Photon. Technol. Lett.18(2), 424–426 (2006).
    [CrossRef]
  16. A. Sirbu, N. Volet, A. Mereuta, J. Lyytikainen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands,” Adv. Opt. Technol.209093 (2011).
    [CrossRef]
  17. Z. Zhao, S. Bouchoule, L. Ferlazzo, A. Sirbu, A. Mereuta, E. Kapon, E. Galopin, J.-C. Harmand, J. Decobert, and J.-L. Oudar, “Cost-effective thermally-managed 1.55-μm VECSEL with hybrid mirror on copper substrate,” in IEEE Journal Quantum Electron.48(5), 643–650 (2012).
    [CrossRef]

2013

2012

Z. Zhao, S. Bouchoule, L. Ferlazzo, A. Sirbu, A. Mereuta, E. Kapon, E. Galopin, J.-C. Harmand, J. Decobert, and J.-L. Oudar, “Cost-effective thermally-managed 1.55-μm VECSEL with hybrid mirror on copper substrate,” in IEEE Journal Quantum Electron.48(5), 643–650 (2012).
[CrossRef]

2011

A. Caliman, A. Mereuta, G. Suruceanu, V. Iakovlev, A. Sirbu, and E. Kapon, “8 mW fundamental mode output of wafer-fused VCSELs emitting in the 1550-nm band,” Opt. Express19(18), 16996–17001 (2011).
[CrossRef] [PubMed]

A. Sirbu, V. Iakovelv, A. Mereuta, A. Caliman, G. Suruceanu, and E. Kapon, “Wafer-fused hetero-structures: application to vertical cavity surface-emitting lasers emitting in the 1310 nm band,” Semicond. Sci. Technol.26(1), 014016 (2011).
[CrossRef]

Y. Barbarin, M. Hoffmann, W. P. Pallmann, I. Dahhan, P. Kreuter, M. Miller, J. Baier, H. Moench, M. Golling, T. Südmeyer, B. Witzigmann, and U. Keller, “Electrically pumped vertical external cavity surface emitting lasers suitable for passive modelocking,” IEEE J. Sel. Top. Quantum Electron.17(6), 1779–1786 (2011).
[CrossRef]

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikainen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands,” Adv. Opt. Technol.209093 (2011).
[CrossRef]

2010

2009

E. Kapon and A. Sirbu, “Long wavelength VCSELs: power efficient answer,” Nat. Photonics3(1), 27–29 (2009).
[CrossRef]

2008

2007

A. Bousseksou, S. Bouchoule, M. E. Kurdi, M. Strassner, I. Sagnes, P. Crozat, and J. Jacquet, “Fabrication and characterization of 1.55 μm single transverse mode large diameter electrically pumped VECSEL,” Opt. Quantum Electron.38(15), 1269–1278 (2007).
[CrossRef]

2006

W. Hofmann, N. H. Zhu, M. Ortsiefer, G. Bohm, J. Rosskopf, L. Chao, S. Zhang, M. Maute, and M.-C. Amann, “10-Gb/s data transmission using BSB passivated 1.55- μm InGaAlAs-InP VCSELs,” IEEE Photon. Technol. Lett.18(2), 424–426 (2006).
[CrossRef]

S. Tonda-Goldstein, D. Dolfi, A. Monsterleet, S. Formont, J. Chazelas, and J.-P. Huignard, “Optical signal processing in radar systems,” IEEE Trans. Microw. Theory Tech.54(2), 847–853 (2006).
[CrossRef]

2003

J. G. McInerney, A. Mooradian, A. Lewis, A. V. Shchegrov, E. M. Strzelecka, D. Lee, J. P. Watson, M. Liebman, G. P. Carey, B. D. Cantos, W. R. Hitchens, and D. Heald, “High-power surface emitting semiconductor laser with extended vertical compound cavity,” Electron. Lett.39(6), 523–525 (2003).
[CrossRef]

2001

M. Alouini, B. Benazet, M. Vallet, M. Brunel, P. Di Bin, F. Bretenaker, A. Le Floch, and P. Thony, “Offset phase locking of Er:Yb:Glass laser eigenstates for RF photonics applications,” IEEE Photon. Technol. Lett.13(4), 367–369 (2001).
[CrossRef]

Alouini, M.

Amann, M.-C.

W. Hofmann, N. H. Zhu, M. Ortsiefer, G. Bohm, J. Rosskopf, L. Chao, S. Zhang, M. Maute, and M.-C. Amann, “10-Gb/s data transmission using BSB passivated 1.55- μm InGaAlAs-InP VCSELs,” IEEE Photon. Technol. Lett.18(2), 424–426 (2006).
[CrossRef]

Baier, J.

Y. Barbarin, M. Hoffmann, W. P. Pallmann, I. Dahhan, P. Kreuter, M. Miller, J. Baier, H. Moench, M. Golling, T. Südmeyer, B. Witzigmann, and U. Keller, “Electrically pumped vertical external cavity surface emitting lasers suitable for passive modelocking,” IEEE J. Sel. Top. Quantum Electron.17(6), 1779–1786 (2011).
[CrossRef]

Baili, G.

Barbarin, Y.

Y. Barbarin, M. Hoffmann, W. P. Pallmann, I. Dahhan, P. Kreuter, M. Miller, J. Baier, H. Moench, M. Golling, T. Südmeyer, B. Witzigmann, and U. Keller, “Electrically pumped vertical external cavity surface emitting lasers suitable for passive modelocking,” IEEE J. Sel. Top. Quantum Electron.17(6), 1779–1786 (2011).
[CrossRef]

Benazet, B.

M. Alouini, B. Benazet, M. Vallet, M. Brunel, P. Di Bin, F. Bretenaker, A. Le Floch, and P. Thony, “Offset phase locking of Er:Yb:Glass laser eigenstates for RF photonics applications,” IEEE Photon. Technol. Lett.13(4), 367–369 (2001).
[CrossRef]

Bohm, G.

W. Hofmann, N. H. Zhu, M. Ortsiefer, G. Bohm, J. Rosskopf, L. Chao, S. Zhang, M. Maute, and M.-C. Amann, “10-Gb/s data transmission using BSB passivated 1.55- μm InGaAlAs-InP VCSELs,” IEEE Photon. Technol. Lett.18(2), 424–426 (2006).
[CrossRef]

Bouchoule, S.

Z. Zhao, S. Bouchoule, L. Ferlazzo, A. Sirbu, A. Mereuta, E. Kapon, E. Galopin, J.-C. Harmand, J. Decobert, and J.-L. Oudar, “Cost-effective thermally-managed 1.55-μm VECSEL with hybrid mirror on copper substrate,” in IEEE Journal Quantum Electron.48(5), 643–650 (2012).
[CrossRef]

A. Bousseksou, S. Bouchoule, M. E. Kurdi, M. Strassner, I. Sagnes, P. Crozat, and J. Jacquet, “Fabrication and characterization of 1.55 μm single transverse mode large diameter electrically pumped VECSEL,” Opt. Quantum Electron.38(15), 1269–1278 (2007).
[CrossRef]

Bousseksou, A.

A. Bousseksou, S. Bouchoule, M. E. Kurdi, M. Strassner, I. Sagnes, P. Crozat, and J. Jacquet, “Fabrication and characterization of 1.55 μm single transverse mode large diameter electrically pumped VECSEL,” Opt. Quantum Electron.38(15), 1269–1278 (2007).
[CrossRef]

Bretenaker, F.

Brunel, M.

M. Alouini, B. Benazet, M. Vallet, M. Brunel, P. Di Bin, F. Bretenaker, A. Le Floch, and P. Thony, “Offset phase locking of Er:Yb:Glass laser eigenstates for RF photonics applications,” IEEE Photon. Technol. Lett.13(4), 367–369 (2001).
[CrossRef]

Caliman, A.

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikainen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands,” Adv. Opt. Technol.209093 (2011).
[CrossRef]

A. Sirbu, V. Iakovelv, A. Mereuta, A. Caliman, G. Suruceanu, and E. Kapon, “Wafer-fused hetero-structures: application to vertical cavity surface-emitting lasers emitting in the 1310 nm band,” Semicond. Sci. Technol.26(1), 014016 (2011).
[CrossRef]

A. Caliman, A. Mereuta, G. Suruceanu, V. Iakovlev, A. Sirbu, and E. Kapon, “8 mW fundamental mode output of wafer-fused VCSELs emitting in the 1550-nm band,” Opt. Express19(18), 16996–17001 (2011).
[CrossRef] [PubMed]

Cantos, B. D.

J. G. McInerney, A. Mooradian, A. Lewis, A. V. Shchegrov, E. M. Strzelecka, D. Lee, J. P. Watson, M. Liebman, G. P. Carey, B. D. Cantos, W. R. Hitchens, and D. Heald, “High-power surface emitting semiconductor laser with extended vertical compound cavity,” Electron. Lett.39(6), 523–525 (2003).
[CrossRef]

Carey, G. P.

J. G. McInerney, A. Mooradian, A. Lewis, A. V. Shchegrov, E. M. Strzelecka, D. Lee, J. P. Watson, M. Liebman, G. P. Carey, B. D. Cantos, W. R. Hitchens, and D. Heald, “High-power surface emitting semiconductor laser with extended vertical compound cavity,” Electron. Lett.39(6), 523–525 (2003).
[CrossRef]

Chamorovskiy, A.

Chao, L.

W. Hofmann, N. H. Zhu, M. Ortsiefer, G. Bohm, J. Rosskopf, L. Chao, S. Zhang, M. Maute, and M.-C. Amann, “10-Gb/s data transmission using BSB passivated 1.55- μm InGaAlAs-InP VCSELs,” IEEE Photon. Technol. Lett.18(2), 424–426 (2006).
[CrossRef]

Chazelas, J.

S. Tonda-Goldstein, D. Dolfi, A. Monsterleet, S. Formont, J. Chazelas, and J.-P. Huignard, “Optical signal processing in radar systems,” IEEE Trans. Microw. Theory Tech.54(2), 847–853 (2006).
[CrossRef]

Crozat, P.

A. Bousseksou, S. Bouchoule, M. E. Kurdi, M. Strassner, I. Sagnes, P. Crozat, and J. Jacquet, “Fabrication and characterization of 1.55 μm single transverse mode large diameter electrically pumped VECSEL,” Opt. Quantum Electron.38(15), 1269–1278 (2007).
[CrossRef]

Czyszanowski, T.

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikainen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands,” Adv. Opt. Technol.209093 (2011).
[CrossRef]

Dahhan, I.

Y. Barbarin, M. Hoffmann, W. P. Pallmann, I. Dahhan, P. Kreuter, M. Miller, J. Baier, H. Moench, M. Golling, T. Südmeyer, B. Witzigmann, and U. Keller, “Electrically pumped vertical external cavity surface emitting lasers suitable for passive modelocking,” IEEE J. Sel. Top. Quantum Electron.17(6), 1779–1786 (2011).
[CrossRef]

Decobert, J.

Z. Zhao, S. Bouchoule, L. Ferlazzo, A. Sirbu, A. Mereuta, E. Kapon, E. Galopin, J.-C. Harmand, J. Decobert, and J.-L. Oudar, “Cost-effective thermally-managed 1.55-μm VECSEL with hybrid mirror on copper substrate,” in IEEE Journal Quantum Electron.48(5), 643–650 (2012).
[CrossRef]

Di Bin, P.

M. Alouini, B. Benazet, M. Vallet, M. Brunel, P. Di Bin, F. Bretenaker, A. Le Floch, and P. Thony, “Offset phase locking of Er:Yb:Glass laser eigenstates for RF photonics applications,” IEEE Photon. Technol. Lett.13(4), 367–369 (2001).
[CrossRef]

Dolfi, D.

Ferlazzo, L.

Z. Zhao, S. Bouchoule, L. Ferlazzo, A. Sirbu, A. Mereuta, E. Kapon, E. Galopin, J.-C. Harmand, J. Decobert, and J.-L. Oudar, “Cost-effective thermally-managed 1.55-μm VECSEL with hybrid mirror on copper substrate,” in IEEE Journal Quantum Electron.48(5), 643–650 (2012).
[CrossRef]

Formont, S.

S. Tonda-Goldstein, D. Dolfi, A. Monsterleet, S. Formont, J. Chazelas, and J.-P. Huignard, “Optical signal processing in radar systems,” IEEE Trans. Microw. Theory Tech.54(2), 847–853 (2006).
[CrossRef]

Galopin, E.

Z. Zhao, S. Bouchoule, L. Ferlazzo, A. Sirbu, A. Mereuta, E. Kapon, E. Galopin, J.-C. Harmand, J. Decobert, and J.-L. Oudar, “Cost-effective thermally-managed 1.55-μm VECSEL with hybrid mirror on copper substrate,” in IEEE Journal Quantum Electron.48(5), 643–650 (2012).
[CrossRef]

Ghosh, R.

Goldfarb, F.

Golling, M.

Y. Barbarin, M. Hoffmann, W. P. Pallmann, I. Dahhan, P. Kreuter, M. Miller, J. Baier, H. Moench, M. Golling, T. Südmeyer, B. Witzigmann, and U. Keller, “Electrically pumped vertical external cavity surface emitting lasers suitable for passive modelocking,” IEEE J. Sel. Top. Quantum Electron.17(6), 1779–1786 (2011).
[CrossRef]

Harmand, J.-C.

Z. Zhao, S. Bouchoule, L. Ferlazzo, A. Sirbu, A. Mereuta, E. Kapon, E. Galopin, J.-C. Harmand, J. Decobert, and J.-L. Oudar, “Cost-effective thermally-managed 1.55-μm VECSEL with hybrid mirror on copper substrate,” in IEEE Journal Quantum Electron.48(5), 643–650 (2012).
[CrossRef]

Heald, D.

J. G. McInerney, A. Mooradian, A. Lewis, A. V. Shchegrov, E. M. Strzelecka, D. Lee, J. P. Watson, M. Liebman, G. P. Carey, B. D. Cantos, W. R. Hitchens, and D. Heald, “High-power surface emitting semiconductor laser with extended vertical compound cavity,” Electron. Lett.39(6), 523–525 (2003).
[CrossRef]

Hitchens, W. R.

J. G. McInerney, A. Mooradian, A. Lewis, A. V. Shchegrov, E. M. Strzelecka, D. Lee, J. P. Watson, M. Liebman, G. P. Carey, B. D. Cantos, W. R. Hitchens, and D. Heald, “High-power surface emitting semiconductor laser with extended vertical compound cavity,” Electron. Lett.39(6), 523–525 (2003).
[CrossRef]

Hoffmann, M.

Y. Barbarin, M. Hoffmann, W. P. Pallmann, I. Dahhan, P. Kreuter, M. Miller, J. Baier, H. Moench, M. Golling, T. Südmeyer, B. Witzigmann, and U. Keller, “Electrically pumped vertical external cavity surface emitting lasers suitable for passive modelocking,” IEEE J. Sel. Top. Quantum Electron.17(6), 1779–1786 (2011).
[CrossRef]

Hofmann, W.

W. Hofmann, N. H. Zhu, M. Ortsiefer, G. Bohm, J. Rosskopf, L. Chao, S. Zhang, M. Maute, and M.-C. Amann, “10-Gb/s data transmission using BSB passivated 1.55- μm InGaAlAs-InP VCSELs,” IEEE Photon. Technol. Lett.18(2), 424–426 (2006).
[CrossRef]

Huignard, J.-P.

S. Tonda-Goldstein, D. Dolfi, A. Monsterleet, S. Formont, J. Chazelas, and J.-P. Huignard, “Optical signal processing in radar systems,” IEEE Trans. Microw. Theory Tech.54(2), 847–853 (2006).
[CrossRef]

Iakovelv, V.

A. Sirbu, V. Iakovelv, A. Mereuta, A. Caliman, G. Suruceanu, and E. Kapon, “Wafer-fused hetero-structures: application to vertical cavity surface-emitting lasers emitting in the 1310 nm band,” Semicond. Sci. Technol.26(1), 014016 (2011).
[CrossRef]

Iakovlev, V.

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikainen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands,” Adv. Opt. Technol.209093 (2011).
[CrossRef]

A. Caliman, A. Mereuta, G. Suruceanu, V. Iakovlev, A. Sirbu, and E. Kapon, “8 mW fundamental mode output of wafer-fused VCSELs emitting in the 1550-nm band,” Opt. Express19(18), 16996–17001 (2011).
[CrossRef] [PubMed]

Jacquet, J.

A. Bousseksou, S. Bouchoule, M. E. Kurdi, M. Strassner, I. Sagnes, P. Crozat, and J. Jacquet, “Fabrication and characterization of 1.55 μm single transverse mode large diameter electrically pumped VECSEL,” Opt. Quantum Electron.38(15), 1269–1278 (2007).
[CrossRef]

Kapon, E.

A. Rantamäki, J. Rautiainen, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “1.56 µm 1 watt single frequency semiconductor disk laser,” Opt. Express21(2), 2355–2360 (2013).
[CrossRef] [PubMed]

Z. Zhao, S. Bouchoule, L. Ferlazzo, A. Sirbu, A. Mereuta, E. Kapon, E. Galopin, J.-C. Harmand, J. Decobert, and J.-L. Oudar, “Cost-effective thermally-managed 1.55-μm VECSEL with hybrid mirror on copper substrate,” in IEEE Journal Quantum Electron.48(5), 643–650 (2012).
[CrossRef]

A. Caliman, A. Mereuta, G. Suruceanu, V. Iakovlev, A. Sirbu, and E. Kapon, “8 mW fundamental mode output of wafer-fused VCSELs emitting in the 1550-nm band,” Opt. Express19(18), 16996–17001 (2011).
[CrossRef] [PubMed]

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikainen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands,” Adv. Opt. Technol.209093 (2011).
[CrossRef]

A. Sirbu, V. Iakovelv, A. Mereuta, A. Caliman, G. Suruceanu, and E. Kapon, “Wafer-fused hetero-structures: application to vertical cavity surface-emitting lasers emitting in the 1310 nm band,” Semicond. Sci. Technol.26(1), 014016 (2011).
[CrossRef]

A. Chamorovskiy, J. Rautiainen, J. Lyytikäinen, S. Ranta, M. Tavast, A. Sirbu, E. Kapon, and O. G. Okhotnikov, “Raman fiber laser pumped by a semiconductor disk laser and mode locked by a semiconductor saturable absorber mirror,” Opt. Lett.35(20), 3529–3531 (2010).
[CrossRef] [PubMed]

A. Chamorovskiy, A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “1.38-µm mode-locked Raman fiber laser pumped by semiconductor disk laser,” Opt. Express18(23), 23872–23877 (2010).
[CrossRef] [PubMed]

E. Kapon and A. Sirbu, “Long wavelength VCSELs: power efficient answer,” Nat. Photonics3(1), 27–29 (2009).
[CrossRef]

Keller, U.

Y. Barbarin, M. Hoffmann, W. P. Pallmann, I. Dahhan, P. Kreuter, M. Miller, J. Baier, H. Moench, M. Golling, T. Südmeyer, B. Witzigmann, and U. Keller, “Electrically pumped vertical external cavity surface emitting lasers suitable for passive modelocking,” IEEE J. Sel. Top. Quantum Electron.17(6), 1779–1786 (2011).
[CrossRef]

Kreuter, P.

Y. Barbarin, M. Hoffmann, W. P. Pallmann, I. Dahhan, P. Kreuter, M. Miller, J. Baier, H. Moench, M. Golling, T. Südmeyer, B. Witzigmann, and U. Keller, “Electrically pumped vertical external cavity surface emitting lasers suitable for passive modelocking,” IEEE J. Sel. Top. Quantum Electron.17(6), 1779–1786 (2011).
[CrossRef]

Kurdi, M. E.

A. Bousseksou, S. Bouchoule, M. E. Kurdi, M. Strassner, I. Sagnes, P. Crozat, and J. Jacquet, “Fabrication and characterization of 1.55 μm single transverse mode large diameter electrically pumped VECSEL,” Opt. Quantum Electron.38(15), 1269–1278 (2007).
[CrossRef]

Le Floch, A.

M. Alouini, B. Benazet, M. Vallet, M. Brunel, P. Di Bin, F. Bretenaker, A. Le Floch, and P. Thony, “Offset phase locking of Er:Yb:Glass laser eigenstates for RF photonics applications,” IEEE Photon. Technol. Lett.13(4), 367–369 (2001).
[CrossRef]

Lee, D.

J. G. McInerney, A. Mooradian, A. Lewis, A. V. Shchegrov, E. M. Strzelecka, D. Lee, J. P. Watson, M. Liebman, G. P. Carey, B. D. Cantos, W. R. Hitchens, and D. Heald, “High-power surface emitting semiconductor laser with extended vertical compound cavity,” Electron. Lett.39(6), 523–525 (2003).
[CrossRef]

Lewis, A.

J. G. McInerney, A. Mooradian, A. Lewis, A. V. Shchegrov, E. M. Strzelecka, D. Lee, J. P. Watson, M. Liebman, G. P. Carey, B. D. Cantos, W. R. Hitchens, and D. Heald, “High-power surface emitting semiconductor laser with extended vertical compound cavity,” Electron. Lett.39(6), 523–525 (2003).
[CrossRef]

Liebman, M.

J. G. McInerney, A. Mooradian, A. Lewis, A. V. Shchegrov, E. M. Strzelecka, D. Lee, J. P. Watson, M. Liebman, G. P. Carey, B. D. Cantos, W. R. Hitchens, and D. Heald, “High-power surface emitting semiconductor laser with extended vertical compound cavity,” Electron. Lett.39(6), 523–525 (2003).
[CrossRef]

Lyytikainen, J.

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikainen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands,” Adv. Opt. Technol.209093 (2011).
[CrossRef]

Lyytikäinen, J.

Maute, M.

W. Hofmann, N. H. Zhu, M. Ortsiefer, G. Bohm, J. Rosskopf, L. Chao, S. Zhang, M. Maute, and M.-C. Amann, “10-Gb/s data transmission using BSB passivated 1.55- μm InGaAlAs-InP VCSELs,” IEEE Photon. Technol. Lett.18(2), 424–426 (2006).
[CrossRef]

McInerney, J. G.

J. G. McInerney, A. Mooradian, A. Lewis, A. V. Shchegrov, E. M. Strzelecka, D. Lee, J. P. Watson, M. Liebman, G. P. Carey, B. D. Cantos, W. R. Hitchens, and D. Heald, “High-power surface emitting semiconductor laser with extended vertical compound cavity,” Electron. Lett.39(6), 523–525 (2003).
[CrossRef]

Mereuta, A.

A. Rantamäki, J. Rautiainen, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “1.56 µm 1 watt single frequency semiconductor disk laser,” Opt. Express21(2), 2355–2360 (2013).
[CrossRef] [PubMed]

Z. Zhao, S. Bouchoule, L. Ferlazzo, A. Sirbu, A. Mereuta, E. Kapon, E. Galopin, J.-C. Harmand, J. Decobert, and J.-L. Oudar, “Cost-effective thermally-managed 1.55-μm VECSEL with hybrid mirror on copper substrate,” in IEEE Journal Quantum Electron.48(5), 643–650 (2012).
[CrossRef]

A. Caliman, A. Mereuta, G. Suruceanu, V. Iakovlev, A. Sirbu, and E. Kapon, “8 mW fundamental mode output of wafer-fused VCSELs emitting in the 1550-nm band,” Opt. Express19(18), 16996–17001 (2011).
[CrossRef] [PubMed]

A. Sirbu, V. Iakovelv, A. Mereuta, A. Caliman, G. Suruceanu, and E. Kapon, “Wafer-fused hetero-structures: application to vertical cavity surface-emitting lasers emitting in the 1310 nm band,” Semicond. Sci. Technol.26(1), 014016 (2011).
[CrossRef]

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikainen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands,” Adv. Opt. Technol.209093 (2011).
[CrossRef]

A. Chamorovskiy, A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “1.38-µm mode-locked Raman fiber laser pumped by semiconductor disk laser,” Opt. Express18(23), 23872–23877 (2010).
[CrossRef] [PubMed]

Miller, M.

Y. Barbarin, M. Hoffmann, W. P. Pallmann, I. Dahhan, P. Kreuter, M. Miller, J. Baier, H. Moench, M. Golling, T. Südmeyer, B. Witzigmann, and U. Keller, “Electrically pumped vertical external cavity surface emitting lasers suitable for passive modelocking,” IEEE J. Sel. Top. Quantum Electron.17(6), 1779–1786 (2011).
[CrossRef]

Miranda, B.-X.

Moench, H.

Y. Barbarin, M. Hoffmann, W. P. Pallmann, I. Dahhan, P. Kreuter, M. Miller, J. Baier, H. Moench, M. Golling, T. Südmeyer, B. Witzigmann, and U. Keller, “Electrically pumped vertical external cavity surface emitting lasers suitable for passive modelocking,” IEEE J. Sel. Top. Quantum Electron.17(6), 1779–1786 (2011).
[CrossRef]

Monsterleet, A.

S. Tonda-Goldstein, D. Dolfi, A. Monsterleet, S. Formont, J. Chazelas, and J.-P. Huignard, “Optical signal processing in radar systems,” IEEE Trans. Microw. Theory Tech.54(2), 847–853 (2006).
[CrossRef]

Mooradian, A.

J. G. McInerney, A. Mooradian, A. Lewis, A. V. Shchegrov, E. M. Strzelecka, D. Lee, J. P. Watson, M. Liebman, G. P. Carey, B. D. Cantos, W. R. Hitchens, and D. Heald, “High-power surface emitting semiconductor laser with extended vertical compound cavity,” Electron. Lett.39(6), 523–525 (2003).
[CrossRef]

Morvan, L.

Okhotnikov, O.

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikainen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands,” Adv. Opt. Technol.209093 (2011).
[CrossRef]

Okhotnikov, O. G.

Ortsiefer, M.

W. Hofmann, N. H. Zhu, M. Ortsiefer, G. Bohm, J. Rosskopf, L. Chao, S. Zhang, M. Maute, and M.-C. Amann, “10-Gb/s data transmission using BSB passivated 1.55- μm InGaAlAs-InP VCSELs,” IEEE Photon. Technol. Lett.18(2), 424–426 (2006).
[CrossRef]

Oudar, J.-L.

Z. Zhao, S. Bouchoule, L. Ferlazzo, A. Sirbu, A. Mereuta, E. Kapon, E. Galopin, J.-C. Harmand, J. Decobert, and J.-L. Oudar, “Cost-effective thermally-managed 1.55-μm VECSEL with hybrid mirror on copper substrate,” in IEEE Journal Quantum Electron.48(5), 643–650 (2012).
[CrossRef]

Pal, V.

Pallmann, W. P.

Y. Barbarin, M. Hoffmann, W. P. Pallmann, I. Dahhan, P. Kreuter, M. Miller, J. Baier, H. Moench, M. Golling, T. Südmeyer, B. Witzigmann, and U. Keller, “Electrically pumped vertical external cavity surface emitting lasers suitable for passive modelocking,” IEEE J. Sel. Top. Quantum Electron.17(6), 1779–1786 (2011).
[CrossRef]

Ranta, S.

Rantamäki, A.

Rautiainen, J.

Rosskopf, J.

W. Hofmann, N. H. Zhu, M. Ortsiefer, G. Bohm, J. Rosskopf, L. Chao, S. Zhang, M. Maute, and M.-C. Amann, “10-Gb/s data transmission using BSB passivated 1.55- μm InGaAlAs-InP VCSELs,” IEEE Photon. Technol. Lett.18(2), 424–426 (2006).
[CrossRef]

Sagnes, I.

Shchegrov, A. V.

J. G. McInerney, A. Mooradian, A. Lewis, A. V. Shchegrov, E. M. Strzelecka, D. Lee, J. P. Watson, M. Liebman, G. P. Carey, B. D. Cantos, W. R. Hitchens, and D. Heald, “High-power surface emitting semiconductor laser with extended vertical compound cavity,” Electron. Lett.39(6), 523–525 (2003).
[CrossRef]

Sirbu, A.

A. Rantamäki, J. Rautiainen, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “1.56 µm 1 watt single frequency semiconductor disk laser,” Opt. Express21(2), 2355–2360 (2013).
[CrossRef] [PubMed]

Z. Zhao, S. Bouchoule, L. Ferlazzo, A. Sirbu, A. Mereuta, E. Kapon, E. Galopin, J.-C. Harmand, J. Decobert, and J.-L. Oudar, “Cost-effective thermally-managed 1.55-μm VECSEL with hybrid mirror on copper substrate,” in IEEE Journal Quantum Electron.48(5), 643–650 (2012).
[CrossRef]

A. Caliman, A. Mereuta, G. Suruceanu, V. Iakovlev, A. Sirbu, and E. Kapon, “8 mW fundamental mode output of wafer-fused VCSELs emitting in the 1550-nm band,” Opt. Express19(18), 16996–17001 (2011).
[CrossRef] [PubMed]

A. Sirbu, V. Iakovelv, A. Mereuta, A. Caliman, G. Suruceanu, and E. Kapon, “Wafer-fused hetero-structures: application to vertical cavity surface-emitting lasers emitting in the 1310 nm band,” Semicond. Sci. Technol.26(1), 014016 (2011).
[CrossRef]

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikainen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands,” Adv. Opt. Technol.209093 (2011).
[CrossRef]

A. Chamorovskiy, J. Rautiainen, J. Lyytikäinen, S. Ranta, M. Tavast, A. Sirbu, E. Kapon, and O. G. Okhotnikov, “Raman fiber laser pumped by a semiconductor disk laser and mode locked by a semiconductor saturable absorber mirror,” Opt. Lett.35(20), 3529–3531 (2010).
[CrossRef] [PubMed]

A. Chamorovskiy, A. Rantamäki, A. Sirbu, A. Mereuta, E. Kapon, and O. G. Okhotnikov, “1.38-µm mode-locked Raman fiber laser pumped by semiconductor disk laser,” Opt. Express18(23), 23872–23877 (2010).
[CrossRef] [PubMed]

E. Kapon and A. Sirbu, “Long wavelength VCSELs: power efficient answer,” Nat. Photonics3(1), 27–29 (2009).
[CrossRef]

Strassner, M.

A. Bousseksou, S. Bouchoule, M. E. Kurdi, M. Strassner, I. Sagnes, P. Crozat, and J. Jacquet, “Fabrication and characterization of 1.55 μm single transverse mode large diameter electrically pumped VECSEL,” Opt. Quantum Electron.38(15), 1269–1278 (2007).
[CrossRef]

Strzelecka, E. M.

J. G. McInerney, A. Mooradian, A. Lewis, A. V. Shchegrov, E. M. Strzelecka, D. Lee, J. P. Watson, M. Liebman, G. P. Carey, B. D. Cantos, W. R. Hitchens, and D. Heald, “High-power surface emitting semiconductor laser with extended vertical compound cavity,” Electron. Lett.39(6), 523–525 (2003).
[CrossRef]

Südmeyer, T.

Y. Barbarin, M. Hoffmann, W. P. Pallmann, I. Dahhan, P. Kreuter, M. Miller, J. Baier, H. Moench, M. Golling, T. Südmeyer, B. Witzigmann, and U. Keller, “Electrically pumped vertical external cavity surface emitting lasers suitable for passive modelocking,” IEEE J. Sel. Top. Quantum Electron.17(6), 1779–1786 (2011).
[CrossRef]

Suruceanu, G.

A. Caliman, A. Mereuta, G. Suruceanu, V. Iakovlev, A. Sirbu, and E. Kapon, “8 mW fundamental mode output of wafer-fused VCSELs emitting in the 1550-nm band,” Opt. Express19(18), 16996–17001 (2011).
[CrossRef] [PubMed]

A. Sirbu, V. Iakovelv, A. Mereuta, A. Caliman, G. Suruceanu, and E. Kapon, “Wafer-fused hetero-structures: application to vertical cavity surface-emitting lasers emitting in the 1310 nm band,” Semicond. Sci. Technol.26(1), 014016 (2011).
[CrossRef]

Tavast, M.

Thony, P.

M. Alouini, B. Benazet, M. Vallet, M. Brunel, P. Di Bin, F. Bretenaker, A. Le Floch, and P. Thony, “Offset phase locking of Er:Yb:Glass laser eigenstates for RF photonics applications,” IEEE Photon. Technol. Lett.13(4), 367–369 (2001).
[CrossRef]

Tonda-Goldstein, S.

S. Tonda-Goldstein, D. Dolfi, A. Monsterleet, S. Formont, J. Chazelas, and J.-P. Huignard, “Optical signal processing in radar systems,” IEEE Trans. Microw. Theory Tech.54(2), 847–853 (2006).
[CrossRef]

Trofimoff, P.

Vallet, M.

M. Alouini, B. Benazet, M. Vallet, M. Brunel, P. Di Bin, F. Bretenaker, A. Le Floch, and P. Thony, “Offset phase locking of Er:Yb:Glass laser eigenstates for RF photonics applications,” IEEE Photon. Technol. Lett.13(4), 367–369 (2001).
[CrossRef]

Volet, N.

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikainen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands,” Adv. Opt. Technol.209093 (2011).
[CrossRef]

Walczak, J.

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikainen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands,” Adv. Opt. Technol.209093 (2011).
[CrossRef]

Wasiak, M.

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikainen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands,” Adv. Opt. Technol.209093 (2011).
[CrossRef]

Watson, J. P.

J. G. McInerney, A. Mooradian, A. Lewis, A. V. Shchegrov, E. M. Strzelecka, D. Lee, J. P. Watson, M. Liebman, G. P. Carey, B. D. Cantos, W. R. Hitchens, and D. Heald, “High-power surface emitting semiconductor laser with extended vertical compound cavity,” Electron. Lett.39(6), 523–525 (2003).
[CrossRef]

Witzigmann, B.

Y. Barbarin, M. Hoffmann, W. P. Pallmann, I. Dahhan, P. Kreuter, M. Miller, J. Baier, H. Moench, M. Golling, T. Südmeyer, B. Witzigmann, and U. Keller, “Electrically pumped vertical external cavity surface emitting lasers suitable for passive modelocking,” IEEE J. Sel. Top. Quantum Electron.17(6), 1779–1786 (2011).
[CrossRef]

Zhang, S.

W. Hofmann, N. H. Zhu, M. Ortsiefer, G. Bohm, J. Rosskopf, L. Chao, S. Zhang, M. Maute, and M.-C. Amann, “10-Gb/s data transmission using BSB passivated 1.55- μm InGaAlAs-InP VCSELs,” IEEE Photon. Technol. Lett.18(2), 424–426 (2006).
[CrossRef]

Zhao, Z.

Z. Zhao, S. Bouchoule, L. Ferlazzo, A. Sirbu, A. Mereuta, E. Kapon, E. Galopin, J.-C. Harmand, J. Decobert, and J.-L. Oudar, “Cost-effective thermally-managed 1.55-μm VECSEL with hybrid mirror on copper substrate,” in IEEE Journal Quantum Electron.48(5), 643–650 (2012).
[CrossRef]

Zhu, N. H.

W. Hofmann, N. H. Zhu, M. Ortsiefer, G. Bohm, J. Rosskopf, L. Chao, S. Zhang, M. Maute, and M.-C. Amann, “10-Gb/s data transmission using BSB passivated 1.55- μm InGaAlAs-InP VCSELs,” IEEE Photon. Technol. Lett.18(2), 424–426 (2006).
[CrossRef]

Zhu, Q.

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikainen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands,” Adv. Opt. Technol.209093 (2011).
[CrossRef]

Adv. Opt. Technol.

A. Sirbu, N. Volet, A. Mereuta, J. Lyytikainen, J. Rautiainen, O. Okhotnikov, J. Walczak, M. Wasiak, T. Czyszanowski, A. Caliman, Q. Zhu, V. Iakovlev, and E. Kapon, “Wafer-Fused Optically Pumped VECSELs Emitting in the 1310-nm and 1550-nm Wavebands,” Adv. Opt. Technol.209093 (2011).
[CrossRef]

Electron. Lett.

J. G. McInerney, A. Mooradian, A. Lewis, A. V. Shchegrov, E. M. Strzelecka, D. Lee, J. P. Watson, M. Liebman, G. P. Carey, B. D. Cantos, W. R. Hitchens, and D. Heald, “High-power surface emitting semiconductor laser with extended vertical compound cavity,” Electron. Lett.39(6), 523–525 (2003).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron.

Y. Barbarin, M. Hoffmann, W. P. Pallmann, I. Dahhan, P. Kreuter, M. Miller, J. Baier, H. Moench, M. Golling, T. Südmeyer, B. Witzigmann, and U. Keller, “Electrically pumped vertical external cavity surface emitting lasers suitable for passive modelocking,” IEEE J. Sel. Top. Quantum Electron.17(6), 1779–1786 (2011).
[CrossRef]

IEEE Journal Quantum Electron.

Z. Zhao, S. Bouchoule, L. Ferlazzo, A. Sirbu, A. Mereuta, E. Kapon, E. Galopin, J.-C. Harmand, J. Decobert, and J.-L. Oudar, “Cost-effective thermally-managed 1.55-μm VECSEL with hybrid mirror on copper substrate,” in IEEE Journal Quantum Electron.48(5), 643–650 (2012).
[CrossRef]

IEEE Photon. Technol. Lett.

W. Hofmann, N. H. Zhu, M. Ortsiefer, G. Bohm, J. Rosskopf, L. Chao, S. Zhang, M. Maute, and M.-C. Amann, “10-Gb/s data transmission using BSB passivated 1.55- μm InGaAlAs-InP VCSELs,” IEEE Photon. Technol. Lett.18(2), 424–426 (2006).
[CrossRef]

M. Alouini, B. Benazet, M. Vallet, M. Brunel, P. Di Bin, F. Bretenaker, A. Le Floch, and P. Thony, “Offset phase locking of Er:Yb:Glass laser eigenstates for RF photonics applications,” IEEE Photon. Technol. Lett.13(4), 367–369 (2001).
[CrossRef]

IEEE Trans. Microw. Theory Tech.

S. Tonda-Goldstein, D. Dolfi, A. Monsterleet, S. Formont, J. Chazelas, and J.-P. Huignard, “Optical signal processing in radar systems,” IEEE Trans. Microw. Theory Tech.54(2), 847–853 (2006).
[CrossRef]

J. Lightwave Technol.

Nat. Photonics

E. Kapon and A. Sirbu, “Long wavelength VCSELs: power efficient answer,” Nat. Photonics3(1), 27–29 (2009).
[CrossRef]

Opt. Express

Opt. Lett.

Opt. Quantum Electron.

A. Bousseksou, S. Bouchoule, M. E. Kurdi, M. Strassner, I. Sagnes, P. Crozat, and J. Jacquet, “Fabrication and characterization of 1.55 μm single transverse mode large diameter electrically pumped VECSEL,” Opt. Quantum Electron.38(15), 1269–1278 (2007).
[CrossRef]

Semicond. Sci. Technol.

A. Sirbu, V. Iakovelv, A. Mereuta, A. Caliman, G. Suruceanu, and E. Kapon, “Wafer-fused hetero-structures: application to vertical cavity surface-emitting lasers emitting in the 1310 nm band,” Semicond. Sci. Technol.26(1), 014016 (2011).
[CrossRef]

Other

R. Lauder, “Technology and economics for coarse wavelength multiplexing workshop,” http://ieeexplore.ieee.org (2004).

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Figures (6)

Fig. 1
Fig. 1

Schematic cross-section of the wafer-fused EP-VECSEL gain-mirror. Dashed lines represent the injected current paths.

Fig. 2
Fig. 2

Electroluminescence intensity profiles of the wafer-fused EP-VECSEL for different injected currents. The threshold current for this device was 39 mA.

Fig. 3
Fig. 3

Schematic representation of the wafer-fused EP-VECSEL assembly in a linear cavity configuration.

Fig. 4
Fig. 4

The CW LIVs for 3% output coupler at different heat-sink temperatures.

Fig. 5
Fig. 5

Maximum output power and threshold current density of the wafer-fused EP-VECSEL versus the transmission of the output coupler (OC).

Fig. 6
Fig. 6

Emission spectra of the EP-VECSELs at 15 °C under CW conditions for 3% output coupling and different currents.

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