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Nano-patterned dual-layer ITO electrode of high brightness blue light emitting diodes using maskless wet etching

Semi Oh, Pei-Chen Su, Yong-Jin Yoon, Soohaeng Cho, Joon-Ho Oh, Tae-Yeon Seong, and Kyoung-Kook Kim

Open Access Open Access

Abstract

We propose a dual-layer transparent Indium Tin Oxide (ITO) top electrode scheme and demonstrate the enhancement of the optical output power of GaN-based light emitting diodes (LEDs). The proposed dual-layer structure is composed of a layer with randomly distributed sphere-like nano-patterns obtained solely by a maskless wet etching process and a pre-annealed bottom layer to maintain current spreading of the electrode. It was observed that the surface morphologies and optoelectronic properties are dependent on etching duration. This electrode significantly improves the optical output power of GaN-based LEDs with an enhancement factor of 2.18 at 100 mA without degradation in electrical property when compared to a reference LED.

© 2013 Optical Society of America

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Figures (4)
Fig. 1
Fig. 1 Schematic of LEDs with (a) single-layer ITO electrode, and (b) dual-layer ITO electrode. The dual layer ITO has an additional current spreading layer to maintain good electronic conduction during device operation.

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Fig. 2
Fig. 2 The SEM images of (a) SL400, (b) SL800, and (c) DL400/400 ITO surface morphologies with various dip wet-etching time, from as-deposited to 120 seconds of etching time.

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Fig. 3
Fig. 3 (a) The evolution of sheet resistance of SL400, SL800, and DL400/400 ITO electrode as a function of dip wet-etching time; (b) The evolution of sheet resistance vs. etching time for 200, 300, and 400 nm-thick of the dense bottom ITO layer. (c) The current-voltage-current curve for LEDs with DL400/400 ITO electrode etched for various times.

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Fig. 4
Fig. 4 (a) The variation of light intensity between DL400/400 ITO-electrode LEDs with different ITO surface morphologies achieved by increasing etching time; (b) The comparison of light intensity between a reference LED with un-etched ITO electrode and an LET with DL400/400 electrode. The light intensity was much higher for the dual-layer LED than for the reference LED at all wavelengths; (c) The AFM surface morphology of the top ITO layer after wet dip-etching for 60 seconds with the average size of nano-bumps to be 63.7 nm.

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