Expand this Topic clickable element to expand a topic
Skip to content
Optica Publishing Group
Journal Home About Issues in Progress Current Issue All Issues Feature Issues

Dual-wavelength GaN-based LEDs grown on truncated hexagonal pyramids formed by selective-area regrowth on Si-implanted GaN templates

Ming-Lun Lee, Yu-Hsiang Yeh, Shang-Ju Tu, P.C. Chen, Ming-Jui Wu, Wei-Chih Lai, and Jinn-Kong Sheu

Open Access Open Access

Abstract

GaN-based blue light-emitting diodes (LEDs) with micro truncated hexagonal pyramid (THP) array were grown on selective-area Si-implanted GaN (SIG) templates. The GaN epitaxial layer regrown on the SIG templates exhibited selective growth and subsequent lateral growth to form the THP array. The observed selective-area growth was attributed to the different crystal structures between the Si-implanted and implantation-free regions. Consequently, LEDs grown on the GaN THP array emitted broad electroluminescence spectra with multiple peaks. Spatially resolved cathodoluminescence revealed that the broad spectra originated from different areas within each THP. Transmission electron microscopy showed the GaN-based epitaxial layers, including InGaN/GaN multi-quantum wells regrown at different growth rates (or with different In content in the InGaN wells) between the semi-polar and c-face planes of each THP.

©2013 Optical Society of America

Full Article  |  PDF Article
More Like This
White emission from non-planar InGaN/GaN MQW LEDs grown on GaN template with truncated hexagonal pyramids

Ming-Lun Lee, Yu-Hsiang Yeh, Shang-Ju Tu, P. C. Chen, Wei-Chih Lai, and Jinn-Kong Sheu
Opt. Express 23(7) A401-A412 (2015)

UV light-emitting diodes grown on GaN templates with selective-area Si implantation

Ming-Lun Lee, Po-Hsun Liao, Hsin-Yan Cheng, Wei-Yu Yen, and Jinn-Kong Sheu
Opt. Express 28(4) 4674-4685 (2020)

White-light emission from InGaN/GaN quantum well microrings grown by selective area epitaxy

Guofeng Yang, Peng Chen, Shumei Gao, Guoqing Chen, Rong Zhang, and Youdou Zheng
Photon. Res. 4(1) 17-20 (2016)

View More...

Cited By

Optica participates in Crossref's Cited-By Linking service. Citing articles from Optica Publishing Group journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (5)
Fig. 1
Fig. 1 Schematic illustrations of (a)Al and SiO2 were served as shadow mask and ion-stopping layers, respectively.(b) an n-GaN template with selective-area Si implantation (c) LED structure with truncated hexagonal pyramid array.

Download Full Size | PDF

Fig. 2
Fig. 2 Typical SEM images of (a) an n-GaN layer regrown on the Si-implanted GaN templates (b) LED structure with truncated hexagonal pyramid array.

Download Full Size | PDF

Fig. 3
Fig. 3 Typical cross-sectional TEM images taken (a) between two THPs near the valley in the [ 11 2 ¯ 0 ] direction (b) an enlarged inspection taken from a local area of Fig. 3(a) (c) selective-area electron diffraction patterns determined around the implanted region.

Download Full Size | PDF

Fig. 4
Fig. 4 (a) Typical images taken from the THP LEDs under different current injection (b) typical EL spectra of the THP LEDs driven under different currents.

Download Full Size | PDF

Fig. 5
Fig. 5 (a)Typical CL spectrum taken under an electron beam current of 300 pA and an accelerate voltage of 10 keV (b) SEM mapped image with a frame of 20 × 15μm2 (c) corresponded monochromatic emissive CL image at 365 nm (d) 400 nm (e) 433 nm (f) 500 nm.

Download Full Size | PDF

Select as filters
Select Topics Cancel
Top
       
© Copyright 2024 | Optica Publishing Group. All rights reserved, including rights for text and data mining and training of artificial technologies or similar technologies.
Privacy | Terms of Use