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Misaligned conformal gratings enhanced light trapping in thin film silicon solar cells

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Abstract

The effect of the relative lateral displacement between the front and back sinusoidal textured layers of a conformal grating solar cell on light trapping was investigated. For various amount of relative lateral displacements and thicknesses of the active layer, the external quantum efficiency (EQE) of the misaligned solar cell structures and their EQE enhancement relative to the aligned structure were studied. For both aligned and misaligned solar cell structures, the electric field distribution at the wavelength corresponding to the EQE peaks was analyzed, and the corresponding guided modes were identified. Additional modes were observed in the misaligned grating structures. A 25.1 times enhancement of the EQE at the wavelength of 950 nm and an average of 2.2 times enhancement in the wavelength range from 700 to 900 nm were observed. For the misaligned grating structure with the phase shift β = π/4 and the active layer thickness DSi = 230 nm, a maximum short circuit current density Jsc enhancement of 34% was achieved for normal incidence, and a short circuit current enhancement of more than 15% was obtained for the incident angle between −15° and + 15°.

©2013 Optical Society of America

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Figures (7)

Fig. 1
Fig. 1 Schematic of the thin film silicon solar cell with misaligned conformal grating structure, where A-B, B- C, C- D, D –E, E- F, and F- G denote the region of the transparent conducting ZnO layer, the sinusoidal front grating layer, the silicon absorption layer, the back grating layer, the ZnO layer, and the Ag layer, respectively.
Fig. 2
Fig. 2 External quantum efficiency as a function of wavelengths for different lateral displacement when DSi = 300 nm.
Fig. 3
Fig. 3 External quantum efficiency as a function of wavelengths and silicon active layer thickness for (a) β = 0 and (b) β = π/4
Fig. 4
Fig. 4 The electric field distribution for different modes of the misaligned grating structure (β = π/4); (a) λ = 1085 nm, (b) λ = 990 nm, (c) λ = 950 nm, and (d) λ = 930 nm.
Fig. 5
Fig. 5 External quantum efficiency enhancement for the misaligned grating structure (β = π/4) when DSi = 300 nm.
Fig. 6
Fig. 6 Jsc enhancement as a function of DSi and β when the height of the grating d = 300 nm and the period p = 600 nm.
Fig. 7
Fig. 7 Jsc and Jsc enhancement as functions of incident angle.

Equations (2)

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J sc =e λ hc EQE(λ) I AM1.5 (λ)dλ,
λ p n s ,
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