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Nitride micro-LEDs and beyond - a decade progress review

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Abstract

Since their inception, micro-size light emitting diode (µLED) arrays based on III-nitride semiconductors have emerged as a promising technology for a range of applications. This paper provides an overview on a decade progresses on realizing III-nitride µLED based high voltage single-chip AC/DC-LEDs without power converters to address the key compatibility issue between LEDs and AC power grid infrastructure; and high-resolution solid-state self-emissive microdisplays operating in an active driving scheme to address the need of high brightness, efficiency and robustness of microdisplays. These devices utilize the photonic integration approach by integrating µLED arrays on-chip. Other applications of nitride µLED arrays are also discussed.

©2013 Optical Society of America

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Figures (6)

Fig. 1
Fig. 1 (a) Schematic layer structure diagram and (b) SEM image of InGaN/GaN quantum well micro-size LEDs (μLEDs) (after Ref. [2]).
Fig. 2
Fig. 2 Schematic conceptual circuit diagrams on how to build a high voltage (a) AC and (b) DC LED device (after Refs. [6] & [7]).
Fig. 3
Fig. 3 The cross sectional view of (a) a single low voltage DC LED; (b) high voltage AC/DC LED achieved via monolithic integration of plurality of µLEDs by connecting the p-contact of one µLED to the n-contact of its neighboring µLED; (c) heterogeneous integrated high voltage AC/DC LED achieved via flip-chip bonding with the interconnection between each individual µLED on the submount (after Ref. [7]).
Fig. 4
Fig. 4 Photos of one of our (a) high voltage indicator AC-LEDs with chip size of about 0.3 mm x 0.3 mm and (b) high voltage power AC-LEDs with chip size of about 1 mm x 1mm directly plugged in the 120 VAC power outlets without power converters.
Fig. 5
Fig. 5 (a) Illustration of flip-chip bonding between µLED matrix array and CMOS driver IC via indium bumps to form a highly integrated microdisplay in one package. (b) Optical microscopy image of a full scale (640 x 480 pixels) InGaN µLED array. (c) The zoom-in image of a flip-chip bonded package with µLED pixels and indium bumps viewed from the transparent sapphire side (after Ref. 14).
Fig. 6
Fig. 6 Demonstration of an III-nitride self-emissive µdisplay. (a) A fully assembled InGaN µdisplay operating at a driving current of about 1 μA per pixel. (b) A grayscale projected image of a leopard from a green VGA InGaN microdisplay (having 640 x 480 pixel with a pixel size of 12 µm and a pitch distance of 15 µm) operating at a driving current of 1 μA per pixel. (c) L-I characteristic of a green μLED pixel. (d) I-V characteristic of a green μLED pixel (after Ref. 14).

Tables (1)

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Table 1 Feature of III-nitride μLED based μ displays (after Ref. [14])

Equations (2)

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P ave = 1 π 0 π P(t)dt ,
P output =C I 0 ( e q(VIR) nkT 1),
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