Abstract

Linear polarized electroluminescence was investigated for semipolar (303¯1) and (303¯1¯) InGaN light-emitting diodes (LEDs) with various indium compositions. A high degree of optical polarization was observed for devices on both planes, ranging from 0.37 at 438 nm to 0.79 at 519 nm. The extracted valence band energy separation was consistent with the optical polarization ratios. The effect of anisotropic strain on the valance band structure was studied using k⋅p method for the above two planes. The theoretical calculations are consistent with the experimental results.

© 2012 OSA

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2012 (3)

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[CrossRef]

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, D. Feezell, “High-power, low-efficiency-droop semipolar (202¯1¯) single-quantum-well blue light-emitting diodes, ” Appl. Phys. Express 5(6), 062103 (2012).
[CrossRef]

C. Roberts, Q. Yan, M. S. Miao, C. G. Van de Walle, “Confinement effects on valence-subband character abd polarization anisotropy in semipolar(112¯2) semipolar InGaN/GaN quantum wells, ” J. Appl. Phys. 111, 073113 (2012).
[CrossRef]

2011 (5)

L. Schade, U. T. Schwarz, T. Wernicke, M. Weyers, M. Kneissl, “Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells,” Phys. Status Solidi B 248(3), 638–646 (2011).
[CrossRef]

L. Schade, U. T. Schwarz, T. Wernicke, J. Rass, S. Ploch, M. Weyers, M. Kneissl, “On the optical polarization properties of semipolar InGaN quantum wells,” Appl. Phys. Lett. 99(5), 051103 (2011).
[CrossRef]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, S. Nakamura, “High-power blue-violet semipolar (202¯1¯)InGaN/GaN light-emitting diodes with low efficiency droop up at 200A /cm2,” Appl. Phys. Express 4, 082104 (2011).

S. Brinkley, Y. D. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, S. P. Denbaars, “Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes,” Appl. Phys. Lett. 98(1), 011110 (2011).
[CrossRef]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[CrossRef]

2010 (7)

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar {202¯1} GaN substrates, ” Appl. Phys. Express 3(1), 011003 (2010).
[CrossRef]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. Denbaars, S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (202¯1) GaN substrates, ” Appl. Phys. Express 3(12), 122102 (2010).
[CrossRef]

F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, J. S. Speck, “Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN,” Appl. Phys. Lett. 96(23), 231912 (2010).
[CrossRef]

Y. Zhao, J. Sonoda, I. Koslow, C. C. Pan, H. Ohta, J. S. Ha, S. P. Denbaars, S. Nakamura, “Optimization of devices structures for bright blue semipolar(101¯1¯) light emitting diodes via metalorganic chemical vapor deposition, ” Jpn. J. Appl. Phys. 49, 070206 (2010).
[CrossRef]

Y. Zhao, J. Sonoda, C. C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (101¯1¯)InGaN/GaN light-emitting diodes obtained by backside roughening technique, ” Appl. Phys. Express 3(10), 102101 (2010).
[CrossRef]

S. You, T. Detchprohm, M. Zhu, W. Hou, E. A. Preble, D. Hanser, T. Paskova, C. Wetzel, “Highly polarized green light-emitting diode in m-axis GaInN/GaN,” Appl. Phys. Express 3(10), 102103 (2010).
[CrossRef]

Q. Yan, P. Rinke, M. Scheffler, C. G. Van de Walle, “Role of strain in polarization switching in semipolar InGaN/GaN quantum wells,” Appl. Phys. Lett. 97(18), 181102 (2010).
[CrossRef]

2009 (1)

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, T. Nakamura, “531 green lasing of InGaN based laser diodes on semi-polar{202¯1} free-standing GaN substrates, ” Appl. Phys. Express 2, 082101 (2009).
[CrossRef]

2008 (3)

M. Kubota, K. Okamoto, T. Tanaka, H. Ohta, “Temperature dependence of polarized photoluminescence from nonpolar m-plane InGaN multiple quantum wells for blue laser diodes,” Appl. Phys. Lett. 92(1), 011920 (2008).
[CrossRef]

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, S. P. DenBaars, “Optical polarization of m –plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi A 205(5), 1203–1206 (2008).
[CrossRef]

M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, T. Mukai, “Polarization switching phenomena in semipolar InxGa1-xN/GaN quantum well active layers,” Phys. Rev. B 78(23), 233303 (2008).
[CrossRef]

2007 (1)

S. H. Park, D. Ahn, “Depolarization effects in(112¯2)-oriented InGaN∕GaN quantum well structures,” Appl. Phys. Lett. 90(1), 013505 (2007).
[CrossRef]

2006 (1)

A. E. Romanov, T. J. Baker, S. Nakamura, J. S. Speck, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100, 023522 (2006).

2005 (1)

N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, M. R. Krames, “Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes,” Appl. Phys. Lett. 86(11), 111101 (2005).
[CrossRef]

2000 (1)

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[CrossRef] [PubMed]

1999 (1)

F. Bernardini, V. Fiorentini, “Spontaneous versus piezoelectric polarization in III-V nitrides: conceptual aspects and practical consequences,” Phys. Status Solidi B 216(1), 391–398 (1999).
[CrossRef]

1997 (1)

A. F. Wright, “Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN,” J. Appl. Phys. 82(6), 2833–2839 (1997).
[CrossRef]

Adachi, M.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar {202¯1} GaN substrates, ” Appl. Phys. Express 3(1), 011003 (2010).
[CrossRef]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, T. Nakamura, “531 green lasing of InGaN based laser diodes on semi-polar{202¯1} free-standing GaN substrates, ” Appl. Phys. Express 2, 082101 (2009).
[CrossRef]

Ahn, D.

S. H. Park, D. Ahn, “Depolarization effects in(112¯2)-oriented InGaN∕GaN quantum well structures,” Appl. Phys. Lett. 90(1), 013505 (2007).
[CrossRef]

Akita, K.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, T. Nakamura, “531 green lasing of InGaN based laser diodes on semi-polar{202¯1} free-standing GaN substrates, ” Appl. Phys. Express 2, 082101 (2009).
[CrossRef]

Baker, T. J.

A. E. Romanov, T. J. Baker, S. Nakamura, J. S. Speck, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100, 023522 (2006).

Bernardini, F.

F. Bernardini, V. Fiorentini, “Spontaneous versus piezoelectric polarization in III-V nitrides: conceptual aspects and practical consequences,” Phys. Status Solidi B 216(1), 391–398 (1999).
[CrossRef]

Brandt, O.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[CrossRef] [PubMed]

Brinkley, S.

S. Brinkley, Y. D. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, S. P. Denbaars, “Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes,” Appl. Phys. Lett. 98(1), 011110 (2011).
[CrossRef]

Y. Zhao, J. Sonoda, C. C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (101¯1¯)InGaN/GaN light-emitting diodes obtained by backside roughening technique, ” Appl. Phys. Express 3(10), 102101 (2010).
[CrossRef]

Chakraborty, A.

S. Brinkley, Y. D. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, S. P. Denbaars, “Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes,” Appl. Phys. Lett. 98(1), 011110 (2011).
[CrossRef]

F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, J. S. Speck, “Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN,” Appl. Phys. Lett. 96(23), 231912 (2010).
[CrossRef]

Chung, R. B.

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[CrossRef]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. Denbaars, S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (202¯1) GaN substrates, ” Appl. Phys. Express 3(12), 122102 (2010).
[CrossRef]

Cohen, D.

S. Brinkley, Y. D. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, S. P. Denbaars, “Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes,” Appl. Phys. Lett. 98(1), 011110 (2011).
[CrossRef]

DenBaars, S. P.

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, D. Feezell, “High-power, low-efficiency-droop semipolar (202¯1¯) single-quantum-well blue light-emitting diodes, ” Appl. Phys. Express 5(6), 062103 (2012).
[CrossRef]

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[CrossRef]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, S. Nakamura, “High-power blue-violet semipolar (202¯1¯)InGaN/GaN light-emitting diodes with low efficiency droop up at 200A /cm2,” Appl. Phys. Express 4, 082104 (2011).

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[CrossRef]

S. Brinkley, Y. D. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, S. P. Denbaars, “Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes,” Appl. Phys. Lett. 98(1), 011110 (2011).
[CrossRef]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. Denbaars, S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (202¯1) GaN substrates, ” Appl. Phys. Express 3(12), 122102 (2010).
[CrossRef]

Y. Zhao, J. Sonoda, C. C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (101¯1¯)InGaN/GaN light-emitting diodes obtained by backside roughening technique, ” Appl. Phys. Express 3(10), 102101 (2010).
[CrossRef]

Y. Zhao, J. Sonoda, I. Koslow, C. C. Pan, H. Ohta, J. S. Ha, S. P. Denbaars, S. Nakamura, “Optimization of devices structures for bright blue semipolar(101¯1¯) light emitting diodes via metalorganic chemical vapor deposition, ” Jpn. J. Appl. Phys. 49, 070206 (2010).
[CrossRef]

F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, J. S. Speck, “Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN,” Appl. Phys. Lett. 96(23), 231912 (2010).
[CrossRef]

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, S. P. DenBaars, “Optical polarization of m –plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi A 205(5), 1203–1206 (2008).
[CrossRef]

Detchprohm, T.

S. You, T. Detchprohm, M. Zhu, W. Hou, E. A. Preble, D. Hanser, T. Paskova, C. Wetzel, “Highly polarized green light-emitting diode in m-axis GaInN/GaN,” Appl. Phys. Express 3(10), 102103 (2010).
[CrossRef]

Enya, Y.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar {202¯1} GaN substrates, ” Appl. Phys. Express 3(1), 011003 (2010).
[CrossRef]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, T. Nakamura, “531 green lasing of InGaN based laser diodes on semi-polar{202¯1} free-standing GaN substrates, ” Appl. Phys. Express 2, 082101 (2009).
[CrossRef]

Feezell, D.

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, D. Feezell, “High-power, low-efficiency-droop semipolar (202¯1¯) single-quantum-well blue light-emitting diodes, ” Appl. Phys. Express 5(6), 062103 (2012).
[CrossRef]

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[CrossRef]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, S. Nakamura, “High-power blue-violet semipolar (202¯1¯)InGaN/GaN light-emitting diodes with low efficiency droop up at 200A /cm2,” Appl. Phys. Express 4, 082104 (2011).

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[CrossRef]

Fellows, N. N.

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, S. P. DenBaars, “Optical polarization of m –plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi A 205(5), 1203–1206 (2008).
[CrossRef]

Fiorentini, V.

F. Bernardini, V. Fiorentini, “Spontaneous versus piezoelectric polarization in III-V nitrides: conceptual aspects and practical consequences,” Phys. Status Solidi B 216(1), 391–398 (1999).
[CrossRef]

Fujito, K.

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[CrossRef]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, S. Nakamura, “High-power blue-violet semipolar (202¯1¯)InGaN/GaN light-emitting diodes with low efficiency droop up at 200A /cm2,” Appl. Phys. Express 4, 082104 (2011).

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[CrossRef]

Y. Zhao, J. Sonoda, C. C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (101¯1¯)InGaN/GaN light-emitting diodes obtained by backside roughening technique, ” Appl. Phys. Express 3(10), 102101 (2010).
[CrossRef]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. Denbaars, S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (202¯1) GaN substrates, ” Appl. Phys. Express 3(12), 122102 (2010).
[CrossRef]

Funato, M.

M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, T. Mukai, “Polarization switching phenomena in semipolar InxGa1-xN/GaN quantum well active layers,” Phys. Rev. B 78(23), 233303 (2008).
[CrossRef]

Gardner, N. F.

N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, M. R. Krames, “Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes,” Appl. Phys. Lett. 86(11), 111101 (2005).
[CrossRef]

Grahn, H. T.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[CrossRef] [PubMed]

Ha, J. S.

Y. Zhao, J. Sonoda, I. Koslow, C. C. Pan, H. Ohta, J. S. Ha, S. P. Denbaars, S. Nakamura, “Optimization of devices structures for bright blue semipolar(101¯1¯) light emitting diodes via metalorganic chemical vapor deposition, ” Jpn. J. Appl. Phys. 49, 070206 (2010).
[CrossRef]

Hanser, D.

S. You, T. Detchprohm, M. Zhu, W. Hou, E. A. Preble, D. Hanser, T. Paskova, C. Wetzel, “Highly polarized green light-emitting diode in m-axis GaInN/GaN,” Appl. Phys. Express 3(10), 102103 (2010).
[CrossRef]

Hirasawa, H.

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, S. P. DenBaars, “Optical polarization of m –plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi A 205(5), 1203–1206 (2008).
[CrossRef]

Hou, W.

S. You, T. Detchprohm, M. Zhu, W. Hou, E. A. Preble, D. Hanser, T. Paskova, C. Wetzel, “Highly polarized green light-emitting diode in m-axis GaInN/GaN,” Appl. Phys. Express 3(10), 102103 (2010).
[CrossRef]

Hu, P. S.

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[CrossRef]

Huang, C. Y.

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[CrossRef]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[CrossRef]

Huang, S. C.

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[CrossRef]

Ikegami, T.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, T. Nakamura, “531 green lasing of InGaN based laser diodes on semi-polar{202¯1} free-standing GaN substrates, ” Appl. Phys. Express 2, 082101 (2009).
[CrossRef]

Iso, K.

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, S. P. DenBaars, “Optical polarization of m –plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi A 205(5), 1203–1206 (2008).
[CrossRef]

Katayama, K.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar {202¯1} GaN substrates, ” Appl. Phys. Express 3(1), 011003 (2010).
[CrossRef]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, T. Nakamura, “531 green lasing of InGaN based laser diodes on semi-polar{202¯1} free-standing GaN substrates, ” Appl. Phys. Express 2, 082101 (2009).
[CrossRef]

Kawaguchi, Y.

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[CrossRef]

Kawakami, Y.

M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, T. Mukai, “Polarization switching phenomena in semipolar InxGa1-xN/GaN quantum well active layers,” Phys. Rev. B 78(23), 233303 (2008).
[CrossRef]

Kim, J. C.

N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, M. R. Krames, “Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes,” Appl. Phys. Lett. 86(11), 111101 (2005).
[CrossRef]

Kneissl, M.

L. Schade, U. T. Schwarz, T. Wernicke, J. Rass, S. Ploch, M. Weyers, M. Kneissl, “On the optical polarization properties of semipolar InGaN quantum wells,” Appl. Phys. Lett. 99(5), 051103 (2011).
[CrossRef]

L. Schade, U. T. Schwarz, T. Wernicke, M. Weyers, M. Kneissl, “Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells,” Phys. Status Solidi B 248(3), 638–646 (2011).
[CrossRef]

Kojima, K.

M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, T. Mukai, “Polarization switching phenomena in semipolar InxGa1-xN/GaN quantum well active layers,” Phys. Rev. B 78(23), 233303 (2008).
[CrossRef]

Koslow, I.

Y. Zhao, J. Sonoda, I. Koslow, C. C. Pan, H. Ohta, J. S. Ha, S. P. Denbaars, S. Nakamura, “Optimization of devices structures for bright blue semipolar(101¯1¯) light emitting diodes via metalorganic chemical vapor deposition, ” Jpn. J. Appl. Phys. 49, 070206 (2010).
[CrossRef]

Y. Zhao, J. Sonoda, C. C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (101¯1¯)InGaN/GaN light-emitting diodes obtained by backside roughening technique, ” Appl. Phys. Express 3(10), 102101 (2010).
[CrossRef]

Krames, M. R.

N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, M. R. Krames, “Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes,” Appl. Phys. Lett. 86(11), 111101 (2005).
[CrossRef]

Kubota, M.

M. Kubota, K. Okamoto, T. Tanaka, H. Ohta, “Temperature dependence of polarized photoluminescence from nonpolar m-plane InGaN multiple quantum wells for blue laser diodes,” Appl. Phys. Lett. 92(1), 011920 (2008).
[CrossRef]

Kyono, T.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar {202¯1} GaN substrates, ” Appl. Phys. Express 3(1), 011003 (2010).
[CrossRef]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, T. Nakamura, “531 green lasing of InGaN based laser diodes on semi-polar{202¯1} free-standing GaN substrates, ” Appl. Phys. Express 2, 082101 (2009).
[CrossRef]

Lin, Y. D.

S. Brinkley, Y. D. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, S. P. Denbaars, “Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes,” Appl. Phys. Lett. 98(1), 011110 (2011).
[CrossRef]

F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, J. S. Speck, “Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN,” Appl. Phys. Lett. 96(23), 231912 (2010).
[CrossRef]

Masui, H.

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, S. P. DenBaars, “Optical polarization of m –plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi A 205(5), 1203–1206 (2008).
[CrossRef]

Menniger, J.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[CrossRef] [PubMed]

Miao, M. S.

C. Roberts, Q. Yan, M. S. Miao, C. G. Van de Walle, “Confinement effects on valence-subband character abd polarization anisotropy in semipolar(112¯2) semipolar InGaN/GaN quantum wells, ” J. Appl. Phys. 111, 073113 (2012).
[CrossRef]

Mukai, T.

M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, T. Mukai, “Polarization switching phenomena in semipolar InxGa1-xN/GaN quantum well active layers,” Phys. Rev. B 78(23), 233303 (2008).
[CrossRef]

Nakamura, S.

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[CrossRef]

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, D. Feezell, “High-power, low-efficiency-droop semipolar (202¯1¯) single-quantum-well blue light-emitting diodes, ” Appl. Phys. Express 5(6), 062103 (2012).
[CrossRef]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[CrossRef]

S. Brinkley, Y. D. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, S. P. Denbaars, “Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes,” Appl. Phys. Lett. 98(1), 011110 (2011).
[CrossRef]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, S. Nakamura, “High-power blue-violet semipolar (202¯1¯)InGaN/GaN light-emitting diodes with low efficiency droop up at 200A /cm2,” Appl. Phys. Express 4, 082104 (2011).

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. Denbaars, S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (202¯1) GaN substrates, ” Appl. Phys. Express 3(12), 122102 (2010).
[CrossRef]

Y. Zhao, J. Sonoda, C. C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (101¯1¯)InGaN/GaN light-emitting diodes obtained by backside roughening technique, ” Appl. Phys. Express 3(10), 102101 (2010).
[CrossRef]

Y. Zhao, J. Sonoda, I. Koslow, C. C. Pan, H. Ohta, J. S. Ha, S. P. Denbaars, S. Nakamura, “Optimization of devices structures for bright blue semipolar(101¯1¯) light emitting diodes via metalorganic chemical vapor deposition, ” Jpn. J. Appl. Phys. 49, 070206 (2010).
[CrossRef]

F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, J. S. Speck, “Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN,” Appl. Phys. Lett. 96(23), 231912 (2010).
[CrossRef]

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, S. P. DenBaars, “Optical polarization of m –plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi A 205(5), 1203–1206 (2008).
[CrossRef]

A. E. Romanov, T. J. Baker, S. Nakamura, J. S. Speck, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100, 023522 (2006).

Nakamura, T.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar {202¯1} GaN substrates, ” Appl. Phys. Express 3(1), 011003 (2010).
[CrossRef]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, T. Nakamura, “531 green lasing of InGaN based laser diodes on semi-polar{202¯1} free-standing GaN substrates, ” Appl. Phys. Express 2, 082101 (2009).
[CrossRef]

Narukawa, Y.

M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, T. Mukai, “Polarization switching phenomena in semipolar InxGa1-xN/GaN quantum well active layers,” Phys. Rev. B 78(23), 233303 (2008).
[CrossRef]

Ohta, H.

F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, J. S. Speck, “Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN,” Appl. Phys. Lett. 96(23), 231912 (2010).
[CrossRef]

Y. Zhao, J. Sonoda, I. Koslow, C. C. Pan, H. Ohta, J. S. Ha, S. P. Denbaars, S. Nakamura, “Optimization of devices structures for bright blue semipolar(101¯1¯) light emitting diodes via metalorganic chemical vapor deposition, ” Jpn. J. Appl. Phys. 49, 070206 (2010).
[CrossRef]

Y. Zhao, J. Sonoda, C. C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (101¯1¯)InGaN/GaN light-emitting diodes obtained by backside roughening technique, ” Appl. Phys. Express 3(10), 102101 (2010).
[CrossRef]

M. Kubota, K. Okamoto, T. Tanaka, H. Ohta, “Temperature dependence of polarized photoluminescence from nonpolar m-plane InGaN multiple quantum wells for blue laser diodes,” Appl. Phys. Lett. 92(1), 011920 (2008).
[CrossRef]

Okamoto, K.

M. Kubota, K. Okamoto, T. Tanaka, H. Ohta, “Temperature dependence of polarized photoluminescence from nonpolar m-plane InGaN multiple quantum wells for blue laser diodes,” Appl. Phys. Lett. 92(1), 011920 (2008).
[CrossRef]

Pan, C. C.

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, D. Feezell, “High-power, low-efficiency-droop semipolar (202¯1¯) single-quantum-well blue light-emitting diodes, ” Appl. Phys. Express 5(6), 062103 (2012).
[CrossRef]

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[CrossRef]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, S. Nakamura, “High-power blue-violet semipolar (202¯1¯)InGaN/GaN light-emitting diodes with low efficiency droop up at 200A /cm2,” Appl. Phys. Express 4, 082104 (2011).

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[CrossRef]

Y. Zhao, J. Sonoda, C. C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (101¯1¯)InGaN/GaN light-emitting diodes obtained by backside roughening technique, ” Appl. Phys. Express 3(10), 102101 (2010).
[CrossRef]

Y. Zhao, J. Sonoda, I. Koslow, C. C. Pan, H. Ohta, J. S. Ha, S. P. Denbaars, S. Nakamura, “Optimization of devices structures for bright blue semipolar(101¯1¯) light emitting diodes via metalorganic chemical vapor deposition, ” Jpn. J. Appl. Phys. 49, 070206 (2010).
[CrossRef]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. Denbaars, S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (202¯1) GaN substrates, ” Appl. Phys. Express 3(12), 122102 (2010).
[CrossRef]

Park, S. H.

S. H. Park, D. Ahn, “Depolarization effects in(112¯2)-oriented InGaN∕GaN quantum well structures,” Appl. Phys. Lett. 90(1), 013505 (2007).
[CrossRef]

Paskova, T.

S. You, T. Detchprohm, M. Zhu, W. Hou, E. A. Preble, D. Hanser, T. Paskova, C. Wetzel, “Highly polarized green light-emitting diode in m-axis GaInN/GaN,” Appl. Phys. Express 3(10), 102103 (2010).
[CrossRef]

Pfaff, N.

S. Brinkley, Y. D. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, S. P. Denbaars, “Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes,” Appl. Phys. Lett. 98(1), 011110 (2011).
[CrossRef]

Ploch, S.

L. Schade, U. T. Schwarz, T. Wernicke, J. Rass, S. Ploch, M. Weyers, M. Kneissl, “On the optical polarization properties of semipolar InGaN quantum wells,” Appl. Phys. Lett. 99(5), 051103 (2011).
[CrossRef]

Ploog, K. H.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[CrossRef] [PubMed]

Preble, E. A.

S. You, T. Detchprohm, M. Zhu, W. Hou, E. A. Preble, D. Hanser, T. Paskova, C. Wetzel, “Highly polarized green light-emitting diode in m-axis GaInN/GaN,” Appl. Phys. Express 3(10), 102103 (2010).
[CrossRef]

Ramsteiner, M.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[CrossRef] [PubMed]

Rass, J.

L. Schade, U. T. Schwarz, T. Wernicke, J. Rass, S. Ploch, M. Weyers, M. Kneissl, “On the optical polarization properties of semipolar InGaN quantum wells,” Appl. Phys. Lett. 99(5), 051103 (2011).
[CrossRef]

Reiche, M.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[CrossRef] [PubMed]

Rinke, P.

Q. Yan, P. Rinke, M. Scheffler, C. G. Van de Walle, “Role of strain in polarization switching in semipolar InGaN/GaN quantum wells,” Appl. Phys. Lett. 97(18), 181102 (2010).
[CrossRef]

Roberts, C.

C. Roberts, Q. Yan, M. S. Miao, C. G. Van de Walle, “Confinement effects on valence-subband character abd polarization anisotropy in semipolar(112¯2) semipolar InGaN/GaN quantum wells, ” J. Appl. Phys. 111, 073113 (2012).
[CrossRef]

Romanov, A. E.

A. E. Romanov, T. J. Baker, S. Nakamura, J. S. Speck, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100, 023522 (2006).

Schade, L.

L. Schade, U. T. Schwarz, T. Wernicke, M. Weyers, M. Kneissl, “Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells,” Phys. Status Solidi B 248(3), 638–646 (2011).
[CrossRef]

L. Schade, U. T. Schwarz, T. Wernicke, J. Rass, S. Ploch, M. Weyers, M. Kneissl, “On the optical polarization properties of semipolar InGaN quantum wells,” Appl. Phys. Lett. 99(5), 051103 (2011).
[CrossRef]

Scheffler, M.

Q. Yan, P. Rinke, M. Scheffler, C. G. Van de Walle, “Role of strain in polarization switching in semipolar InGaN/GaN quantum wells,” Appl. Phys. Lett. 97(18), 181102 (2010).
[CrossRef]

Schwarz, U. T.

L. Schade, U. T. Schwarz, T. Wernicke, J. Rass, S. Ploch, M. Weyers, M. Kneissl, “On the optical polarization properties of semipolar InGaN quantum wells,” Appl. Phys. Lett. 99(5), 051103 (2011).
[CrossRef]

L. Schade, U. T. Schwarz, T. Wernicke, M. Weyers, M. Kneissl, “Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells,” Phys. Status Solidi B 248(3), 638–646 (2011).
[CrossRef]

Shen, Y. C.

N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, M. R. Krames, “Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes,” Appl. Phys. Lett. 86(11), 111101 (2005).
[CrossRef]

Sonoda, J.

Y. Zhao, J. Sonoda, I. Koslow, C. C. Pan, H. Ohta, J. S. Ha, S. P. Denbaars, S. Nakamura, “Optimization of devices structures for bright blue semipolar(101¯1¯) light emitting diodes via metalorganic chemical vapor deposition, ” Jpn. J. Appl. Phys. 49, 070206 (2010).
[CrossRef]

Y. Zhao, J. Sonoda, C. C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (101¯1¯)InGaN/GaN light-emitting diodes obtained by backside roughening technique, ” Appl. Phys. Express 3(10), 102101 (2010).
[CrossRef]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. Denbaars, S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (202¯1) GaN substrates, ” Appl. Phys. Express 3(12), 122102 (2010).
[CrossRef]

Speck, J. S.

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, D. Feezell, “High-power, low-efficiency-droop semipolar (202¯1¯) single-quantum-well blue light-emitting diodes, ” Appl. Phys. Express 5(6), 062103 (2012).
[CrossRef]

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[CrossRef]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, S. Nakamura, “High-power blue-violet semipolar (202¯1¯)InGaN/GaN light-emitting diodes with low efficiency droop up at 200A /cm2,” Appl. Phys. Express 4, 082104 (2011).

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[CrossRef]

S. Brinkley, Y. D. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, S. P. Denbaars, “Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes,” Appl. Phys. Lett. 98(1), 011110 (2011).
[CrossRef]

F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, J. S. Speck, “Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN,” Appl. Phys. Lett. 96(23), 231912 (2010).
[CrossRef]

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, S. P. DenBaars, “Optical polarization of m –plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi A 205(5), 1203–1206 (2008).
[CrossRef]

A. E. Romanov, T. J. Baker, S. Nakamura, J. S. Speck, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100, 023522 (2006).

Sumitomo, T.

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, T. Nakamura, “531 green lasing of InGaN based laser diodes on semi-polar{202¯1} free-standing GaN substrates, ” Appl. Phys. Express 2, 082101 (2009).
[CrossRef]

Tanaka, S.

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, D. Feezell, “High-power, low-efficiency-droop semipolar (202¯1¯) single-quantum-well blue light-emitting diodes, ” Appl. Phys. Express 5(6), 062103 (2012).
[CrossRef]

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[CrossRef]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, S. Nakamura, “High-power blue-violet semipolar (202¯1¯)InGaN/GaN light-emitting diodes with low efficiency droop up at 200A /cm2,” Appl. Phys. Express 4, 082104 (2011).

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[CrossRef]

Tanaka, T.

M. Kubota, K. Okamoto, T. Tanaka, H. Ohta, “Temperature dependence of polarized photoluminescence from nonpolar m-plane InGaN multiple quantum wells for blue laser diodes,” Appl. Phys. Lett. 92(1), 011920 (2008).
[CrossRef]

Tokuyama, S.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar {202¯1} GaN substrates, ” Appl. Phys. Express 3(1), 011003 (2010).
[CrossRef]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, T. Nakamura, “531 green lasing of InGaN based laser diodes on semi-polar{202¯1} free-standing GaN substrates, ” Appl. Phys. Express 2, 082101 (2009).
[CrossRef]

Trampert, A.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[CrossRef] [PubMed]

Ueda, M.

M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, T. Mukai, “Polarization switching phenomena in semipolar InxGa1-xN/GaN quantum well active layers,” Phys. Rev. B 78(23), 233303 (2008).
[CrossRef]

Ueno, M.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar {202¯1} GaN substrates, ” Appl. Phys. Express 3(1), 011003 (2010).
[CrossRef]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, T. Nakamura, “531 green lasing of InGaN based laser diodes on semi-polar{202¯1} free-standing GaN substrates, ” Appl. Phys. Express 2, 082101 (2009).
[CrossRef]

Van de Walle, C. G.

C. Roberts, Q. Yan, M. S. Miao, C. G. Van de Walle, “Confinement effects on valence-subband character abd polarization anisotropy in semipolar(112¯2) semipolar InGaN/GaN quantum wells, ” J. Appl. Phys. 111, 073113 (2012).
[CrossRef]

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[CrossRef]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[CrossRef]

Q. Yan, P. Rinke, M. Scheffler, C. G. Van de Walle, “Role of strain in polarization switching in semipolar InGaN/GaN quantum wells,” Appl. Phys. Lett. 97(18), 181102 (2010).
[CrossRef]

Waltereit, P.

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[CrossRef] [PubMed]

Wernicke, T.

L. Schade, U. T. Schwarz, T. Wernicke, M. Weyers, M. Kneissl, “Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells,” Phys. Status Solidi B 248(3), 638–646 (2011).
[CrossRef]

L. Schade, U. T. Schwarz, T. Wernicke, J. Rass, S. Ploch, M. Weyers, M. Kneissl, “On the optical polarization properties of semipolar InGaN quantum wells,” Appl. Phys. Lett. 99(5), 051103 (2011).
[CrossRef]

Wetzel, C.

S. You, T. Detchprohm, M. Zhu, W. Hou, E. A. Preble, D. Hanser, T. Paskova, C. Wetzel, “Highly polarized green light-emitting diode in m-axis GaInN/GaN,” Appl. Phys. Express 3(10), 102103 (2010).
[CrossRef]

Weyers, M.

L. Schade, U. T. Schwarz, T. Wernicke, J. Rass, S. Ploch, M. Weyers, M. Kneissl, “On the optical polarization properties of semipolar InGaN quantum wells,” Appl. Phys. Lett. 99(5), 051103 (2011).
[CrossRef]

L. Schade, U. T. Schwarz, T. Wernicke, M. Weyers, M. Kneissl, “Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells,” Phys. Status Solidi B 248(3), 638–646 (2011).
[CrossRef]

Wierer, J. J.

N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, M. R. Krames, “Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes,” Appl. Phys. Lett. 86(11), 111101 (2005).
[CrossRef]

Wright, A. F.

A. F. Wright, “Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN,” J. Appl. Phys. 82(6), 2833–2839 (1997).
[CrossRef]

Wu, F.

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, D. Feezell, “High-power, low-efficiency-droop semipolar (202¯1¯) single-quantum-well blue light-emitting diodes, ” Appl. Phys. Express 5(6), 062103 (2012).
[CrossRef]

F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, J. S. Speck, “Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN,” Appl. Phys. Lett. 96(23), 231912 (2010).
[CrossRef]

Yamada, H.

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, S. P. DenBaars, “Optical polarization of m –plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi A 205(5), 1203–1206 (2008).
[CrossRef]

Yamamoto, S.

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. Denbaars, S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (202¯1) GaN substrates, ” Appl. Phys. Express 3(12), 122102 (2010).
[CrossRef]

Yan, Q.

C. Roberts, Q. Yan, M. S. Miao, C. G. Van de Walle, “Confinement effects on valence-subband character abd polarization anisotropy in semipolar(112¯2) semipolar InGaN/GaN quantum wells, ” J. Appl. Phys. 111, 073113 (2012).
[CrossRef]

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[CrossRef]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[CrossRef]

Q. Yan, P. Rinke, M. Scheffler, C. G. Van de Walle, “Role of strain in polarization switching in semipolar InGaN/GaN quantum wells,” Appl. Phys. Lett. 97(18), 181102 (2010).
[CrossRef]

Yoshizumi, Y.

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar {202¯1} GaN substrates, ” Appl. Phys. Express 3(1), 011003 (2010).
[CrossRef]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, T. Nakamura, “531 green lasing of InGaN based laser diodes on semi-polar{202¯1} free-standing GaN substrates, ” Appl. Phys. Express 2, 082101 (2009).
[CrossRef]

You, S.

S. You, T. Detchprohm, M. Zhu, W. Hou, E. A. Preble, D. Hanser, T. Paskova, C. Wetzel, “Highly polarized green light-emitting diode in m-axis GaInN/GaN,” Appl. Phys. Express 3(10), 102103 (2010).
[CrossRef]

Zhao, Y.

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[CrossRef]

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, D. Feezell, “High-power, low-efficiency-droop semipolar (202¯1¯) single-quantum-well blue light-emitting diodes, ” Appl. Phys. Express 5(6), 062103 (2012).
[CrossRef]

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[CrossRef]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, S. Nakamura, “High-power blue-violet semipolar (202¯1¯)InGaN/GaN light-emitting diodes with low efficiency droop up at 200A /cm2,” Appl. Phys. Express 4, 082104 (2011).

Y. Zhao, J. Sonoda, I. Koslow, C. C. Pan, H. Ohta, J. S. Ha, S. P. Denbaars, S. Nakamura, “Optimization of devices structures for bright blue semipolar(101¯1¯) light emitting diodes via metalorganic chemical vapor deposition, ” Jpn. J. Appl. Phys. 49, 070206 (2010).
[CrossRef]

Y. Zhao, J. Sonoda, C. C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (101¯1¯)InGaN/GaN light-emitting diodes obtained by backside roughening technique, ” Appl. Phys. Express 3(10), 102101 (2010).
[CrossRef]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. Denbaars, S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (202¯1) GaN substrates, ” Appl. Phys. Express 3(12), 122102 (2010).
[CrossRef]

Zhu, M.

S. You, T. Detchprohm, M. Zhu, W. Hou, E. A. Preble, D. Hanser, T. Paskova, C. Wetzel, “Highly polarized green light-emitting diode in m-axis GaInN/GaN,” Appl. Phys. Express 3(10), 102103 (2010).
[CrossRef]

Appl. Phys. Express (7)

C. C. Pan, S. Tanaka, F. Wu, Y. Zhao, J. S. Speck, S. Nakamura, S. P. DenBaars, D. Feezell, “High-power, low-efficiency-droop semipolar (202¯1¯) single-quantum-well blue light-emitting diodes, ” Appl. Phys. Express 5(6), 062103 (2012).
[CrossRef]

Y. Zhao, J. Sonoda, C. C. Pan, S. Brinkley, I. Koslow, K. Fujito, H. Ohta, S. P. DenBaars, S. Nakamura, “30-mW-class high-power and high-efficiency blue semipolar (101¯1¯)InGaN/GaN light-emitting diodes obtained by backside roughening technique, ” Appl. Phys. Express 3(10), 102101 (2010).
[CrossRef]

Y. Zhao, S. Tanaka, C. C. Pan, K. Fujito, D. Feezell, J. S. Speck, S. P. DenBaars, S. Nakamura, “High-power blue-violet semipolar (202¯1¯)InGaN/GaN light-emitting diodes with low efficiency droop up at 200A /cm2,” Appl. Phys. Express 4, 082104 (2011).

S. You, T. Detchprohm, M. Zhu, W. Hou, E. A. Preble, D. Hanser, T. Paskova, C. Wetzel, “Highly polarized green light-emitting diode in m-axis GaInN/GaN,” Appl. Phys. Express 3(10), 102103 (2010).
[CrossRef]

Y. Enya, Y. Yoshizumi, T. Kyono, K. Akita, M. Ueno, M. Adachi, T. Sumitomo, S. Tokuyama, T. Ikegami, K. Katayama, T. Nakamura, “531 green lasing of InGaN based laser diodes on semi-polar{202¯1} free-standing GaN substrates, ” Appl. Phys. Express 2, 082101 (2009).
[CrossRef]

T. Kyono, Y. Yoshizumi, Y. Enya, M. Adachi, S. Tokuyama, M. Ueno, K. Katayama, T. Nakamura, “Optical polarization characteristics of InGaN quantum wells for green laser diodes on semi-polar {202¯1} GaN substrates, ” Appl. Phys. Express 3(1), 011003 (2010).
[CrossRef]

S. Yamamoto, Y. Zhao, C. C. Pan, R. B. Chung, K. Fujito, J. Sonoda, S. P. Denbaars, S. Nakamura, “High-efficiency single-quantum-well green and yellow-green light-emitting diodes on semipolar (202¯1) GaN substrates, ” Appl. Phys. Express 3(12), 122102 (2010).
[CrossRef]

Appl. Phys. Lett. (9)

Y. Zhao, S. Tanaka, Q. Yan, C. Y. Huang, R. B. Chung, C. C. Pan, K. Fujito, D. Feezell, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, “High optical polarization ratio from semipolar(202¯1¯) blue-green InGaN/GaN light-emitting diodes, ” Appl. Phys. Lett. 99(5), 051109 (2011).
[CrossRef]

S. Brinkley, Y. D. Lin, A. Chakraborty, N. Pfaff, D. Cohen, J. S. Speck, S. Nakamura, S. P. Denbaars, “Polarized spontaneous emission from blue-green m-plane GaN-based light emitting diodes,” Appl. Phys. Lett. 98(1), 011110 (2011).
[CrossRef]

F. Wu, Y. D. Lin, A. Chakraborty, H. Ohta, S. P. DenBaars, S. Nakamura, J. S. Speck, “Stacking fault formation in the long wavelength InGaN/GaN multiple quantum wells grown on m-plane GaN,” Appl. Phys. Lett. 96(23), 231912 (2010).
[CrossRef]

Y. Zhao, Q. Yan, C. Y. Huang, S. C. Huang, P. S. Hu, S. Tanaka, C. C. Pan, Y. Kawaguchi, K. Fujito, C. G. Van de Walle, J. S. Speck, S. P. DenBaars, S. Nakamura, D. Feezell, “Indium incorporation and emission properties of nonpolar and semipolar InGaN quantum wells,” Appl. Phys. Lett. 100(20), 201108 (2012).
[CrossRef]

N. F. Gardner, J. C. Kim, J. J. Wierer, Y. C. Shen, M. R. Krames, “Polarization anisotropy in the electroluminescence of m-plane InGaN-GaN multiple-quantum-well light-emitting diodes,” Appl. Phys. Lett. 86(11), 111101 (2005).
[CrossRef]

L. Schade, U. T. Schwarz, T. Wernicke, J. Rass, S. Ploch, M. Weyers, M. Kneissl, “On the optical polarization properties of semipolar InGaN quantum wells,” Appl. Phys. Lett. 99(5), 051103 (2011).
[CrossRef]

S. H. Park, D. Ahn, “Depolarization effects in(112¯2)-oriented InGaN∕GaN quantum well structures,” Appl. Phys. Lett. 90(1), 013505 (2007).
[CrossRef]

Q. Yan, P. Rinke, M. Scheffler, C. G. Van de Walle, “Role of strain in polarization switching in semipolar InGaN/GaN quantum wells,” Appl. Phys. Lett. 97(18), 181102 (2010).
[CrossRef]

M. Kubota, K. Okamoto, T. Tanaka, H. Ohta, “Temperature dependence of polarized photoluminescence from nonpolar m-plane InGaN multiple quantum wells for blue laser diodes,” Appl. Phys. Lett. 92(1), 011920 (2008).
[CrossRef]

J. Appl. Phys. (3)

A. F. Wright, “Elastic properties of zinc-blende and wurtzite AlN, GaN, and InN,” J. Appl. Phys. 82(6), 2833–2839 (1997).
[CrossRef]

C. Roberts, Q. Yan, M. S. Miao, C. G. Van de Walle, “Confinement effects on valence-subband character abd polarization anisotropy in semipolar(112¯2) semipolar InGaN/GaN quantum wells, ” J. Appl. Phys. 111, 073113 (2012).
[CrossRef]

A. E. Romanov, T. J. Baker, S. Nakamura, J. S. Speck, “Strain-induced polarization in wurtzite III-nitride semipolar layers,” J. Appl. Phys. 100, 023522 (2006).

Jpn. J. Appl. Phys. (1)

Y. Zhao, J. Sonoda, I. Koslow, C. C. Pan, H. Ohta, J. S. Ha, S. P. Denbaars, S. Nakamura, “Optimization of devices structures for bright blue semipolar(101¯1¯) light emitting diodes via metalorganic chemical vapor deposition, ” Jpn. J. Appl. Phys. 49, 070206 (2010).
[CrossRef]

Nature (1)

P. Waltereit, O. Brandt, A. Trampert, H. T. Grahn, J. Menniger, M. Ramsteiner, M. Reiche, K. H. Ploog, “Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes,” Nature 406(6798), 865–868 (2000).
[CrossRef] [PubMed]

Phys. Rev. B (1)

M. Ueda, M. Funato, K. Kojima, Y. Kawakami, Y. Narukawa, T. Mukai, “Polarization switching phenomena in semipolar InxGa1-xN/GaN quantum well active layers,” Phys. Rev. B 78(23), 233303 (2008).
[CrossRef]

Phys. Status Solidi A (1)

H. Masui, H. Yamada, K. Iso, H. Hirasawa, N. N. Fellows, J. S. Speck, S. Nakamura, S. P. DenBaars, “Optical polarization of m –plane In-GaN/GaN light-emitting diodes characterized via confocal microscope,” Phys. Status Solidi A 205(5), 1203–1206 (2008).
[CrossRef]

Phys. Status Solidi B (2)

L. Schade, U. T. Schwarz, T. Wernicke, M. Weyers, M. Kneissl, “Impact of band structure and transition matrix elements on polarization properties of the photoluminescence of semipolar and nonpolar InGaN quantum wells,” Phys. Status Solidi B 248(3), 638–646 (2011).
[CrossRef]

F. Bernardini, V. Fiorentini, “Spontaneous versus piezoelectric polarization in III-V nitrides: conceptual aspects and practical consequences,” Phys. Status Solidi B 216(1), 391–398 (1999).
[CrossRef]

Other (2)

S. Nakamura, G. Fasol, and S. J. Pearton, The Blue Laser Diode: The Complete Story, 2nd ed. (Springer, 2000).

A. Trellakis, T. Zibold, T. Andlauer, S. Birner, R. K. Smith, R. Morschl, and P. Vogl, “The 3D nanometer devices project nextnano: concepts, methods, results,” J. Comput. Electron. 5, 285–289 (2006). For the nextnano3 code, see http://www.nextnano.de .

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Figures (6)

Fig. 1
Fig. 1

Schematic views of (a) the microscope system used for the polarization measurements, (b) the studied LED structure, and (c) the semipolar (30 3 ¯ 1) crystal planes.

Fig. 2
Fig. 2

Electroluminescence spectra of (30 3 ¯ 1 ¯ ) InGaN LEDs at a wavelength of (a) 445 nm, (b) 483 nm, and (c) 509 nm, showing increasing polarization ratio and energy separation with increasing wavelength. Similar results were obtained for (30 3 ¯ 1) LEDs at a wavelength of (d) 438 nm, (e) 479 nm, and (f) 514 nm.

Fig. 3
Fig. 3

(a) Optical polarization and (b) energy separation (ΔE) with increasing wavelength for (30 3 ¯ 1 ¯ ) and (30 3 ¯ 1) LEDs. Red dash lines are the simulated trend for the experimental data.

Fig. 4
Fig. 4

Strain components in semipolar (30 3 ¯ 1) InGaN grown on GaN as a function of indium composition: x, y and z refer to the natural coordinate system.

Fig. 5
Fig. 5

The calculated valance band dispersion relation for semipolar (30 3 ¯ 1) InGaN/GaN QW with an indium composition of 20%.

Fig. 6
Fig. 6

The calculated energy separation (ΔE) between the top two valance bands at the Γ point (30 3 ¯ 1) InGaN QW and bulk structures.

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