Abstract

A wing-type imbedded electrodes was introduced into the lateral light emitting diode configuration (WTIE-LEDs) to reduce the effect of light shading of electrode in conventional sapphire-based LEDs (CSB-LEDs). The WTIE-LEDs with double-side roughened surface structures not only can eliminate the light shading of electrode and bonding wire, but also increase the light extraction and light output power. Contrast to CSB-LEDs, a 79% enhancement of output intensity in the WTIE-LED was obtained at 100 mA injection current. Similarly, the output power of packaged WTIE-LEDs was enhanced 59% higher compared with the packaged CSB-LEDs at the same injection condition. Therefore, using the imbedded contact to reduce light shading would be a promising prospective for LEDs to achieve high output power.

© 2012 OSA

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  1. R. H. Horng, S. H. Huang, C. Y. Hsieh, X. Zheng, and D. S. Wuu, “Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors,” IEEE J. Quantum Electron. 44(11), 1116–1123 (2008).
    [Crossref]
  2. W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
    [Crossref]
  3. Z. S. Luo, Y. Cho, V. Loryuenyong, T. Sands, N. W. Cheung, and M. C. Yoo, “Enhancement of (In, Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon,” IEEE Photon. Technol. Lett. 14(10), 1400–1402 (2002).
    [Crossref]
  4. M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, and M. Stutzmann, “Laser processing for patterned and freestanding nitride films,” Appl. Phys. Lett. 69(12), 1749–1751 (1996).
    [Crossref]
  5. C. F. Chu, F. I. Lai, J. T. Chu, C. C. Yu, C. F. Lin, H. C. Kuo, and S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys. 95(8), 3916–3922 (2004).
    [Crossref]
  6. W. S. Wong, T. Sands, and N. W. Cheung, “Damage-free separation of GaN thin films from sapphire substrates,” Appl. Phys. Lett. 72(5), 599–601 (1998).
    [Crossref]
  7. S. H. Huang, R. H. Horng, S. L. Li, K. W. Yen, D. S. Wuu, C. K. Lin, and H. Liu, “Thermally stable mirror structures for vertical-conducting GaN/mirror/Si light-emitting diodes,” IEEE Photon. Technol. Lett. 19(23), 1913–1915 (2007).
    [Crossref]
  8. Y. S. Wu, J.-H. Cheng, W. C. Peng, and H. Ouyang, “Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based lightemitting diodes,” Appl. Phys. Lett. 90(25), 251110 (2007).
    [Crossref]
  9. O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
    [Crossref]
  10. R. H. Horng, Y. A. Lu, and D. S. Wuu, “Light Extraction Investigation for Thin-Film GaN Light-Emitting Diodes with Imbedded Electrodes,” IEEE Photon. Technol. Lett. 23(1), 54–56 (2011).
    [Crossref]
  11. S. Kim, J.-H. Jang, J.-S. Lee, and D. J. Duquette, “Stress behavior of electrodeposited copper films as mechanical supporters for light emitting diodes,” Electrochim. Acta 52(16), 5258–5265 (2007).
    [Crossref]
  12. T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, and B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
    [Crossref]

2012 (1)

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, and B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[Crossref]

2011 (1)

R. H. Horng, Y. A. Lu, and D. S. Wuu, “Light Extraction Investigation for Thin-Film GaN Light-Emitting Diodes with Imbedded Electrodes,” IEEE Photon. Technol. Lett. 23(1), 54–56 (2011).
[Crossref]

2008 (1)

R. H. Horng, S. H. Huang, C. Y. Hsieh, X. Zheng, and D. S. Wuu, “Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors,” IEEE J. Quantum Electron. 44(11), 1116–1123 (2008).
[Crossref]

2007 (3)

S. H. Huang, R. H. Horng, S. L. Li, K. W. Yen, D. S. Wuu, C. K. Lin, and H. Liu, “Thermally stable mirror structures for vertical-conducting GaN/mirror/Si light-emitting diodes,” IEEE Photon. Technol. Lett. 19(23), 1913–1915 (2007).
[Crossref]

Y. S. Wu, J.-H. Cheng, W. C. Peng, and H. Ouyang, “Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based lightemitting diodes,” Appl. Phys. Lett. 90(25), 251110 (2007).
[Crossref]

S. Kim, J.-H. Jang, J.-S. Lee, and D. J. Duquette, “Stress behavior of electrodeposited copper films as mechanical supporters for light emitting diodes,” Electrochim. Acta 52(16), 5258–5265 (2007).
[Crossref]

2006 (1)

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[Crossref]

2004 (1)

C. F. Chu, F. I. Lai, J. T. Chu, C. C. Yu, C. F. Lin, H. C. Kuo, and S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys. 95(8), 3916–3922 (2004).
[Crossref]

2002 (1)

Z. S. Luo, Y. Cho, V. Loryuenyong, T. Sands, N. W. Cheung, and M. C. Yoo, “Enhancement of (In, Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon,” IEEE Photon. Technol. Lett. 14(10), 1400–1402 (2002).
[Crossref]

1999 (1)

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
[Crossref]

1998 (1)

W. S. Wong, T. Sands, and N. W. Cheung, “Damage-free separation of GaN thin films from sapphire substrates,” Appl. Phys. Lett. 72(5), 599–601 (1998).
[Crossref]

1996 (1)

M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, and M. Stutzmann, “Laser processing for patterned and freestanding nitride films,” Appl. Phys. Lett. 69(12), 1749–1751 (1996).
[Crossref]

Ambacher, O.

M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, and M. Stutzmann, “Laser processing for patterned and freestanding nitride films,” Appl. Phys. Lett. 69(12), 1749–1751 (1996).
[Crossref]

Angerer, H.

M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, and M. Stutzmann, “Laser processing for patterned and freestanding nitride films,” Appl. Phys. Lett. 69(12), 1749–1751 (1996).
[Crossref]

Bour, D. P.

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
[Crossref]

Chen, T.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, and B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[Crossref]

Chen, W.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, and B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[Crossref]

Cheng, J.-H.

Y. S. Wu, J.-H. Cheng, W. C. Peng, and H. Ouyang, “Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based lightemitting diodes,” Appl. Phys. Lett. 90(25), 251110 (2007).
[Crossref]

Cheung, N. W.

Z. S. Luo, Y. Cho, V. Loryuenyong, T. Sands, N. W. Cheung, and M. C. Yoo, “Enhancement of (In, Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon,” IEEE Photon. Technol. Lett. 14(10), 1400–1402 (2002).
[Crossref]

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
[Crossref]

W. S. Wong, T. Sands, and N. W. Cheung, “Damage-free separation of GaN thin films from sapphire substrates,” Appl. Phys. Lett. 72(5), 599–601 (1998).
[Crossref]

Cho, Y.

Z. S. Luo, Y. Cho, V. Loryuenyong, T. Sands, N. W. Cheung, and M. C. Yoo, “Enhancement of (In, Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon,” IEEE Photon. Technol. Lett. 14(10), 1400–1402 (2002).
[Crossref]

Chu, C. F.

C. F. Chu, F. I. Lai, J. T. Chu, C. C. Yu, C. F. Lin, H. C. Kuo, and S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys. 95(8), 3916–3922 (2004).
[Crossref]

Chu, J. T.

C. F. Chu, F. I. Lai, J. T. Chu, C. C. Yu, C. F. Lin, H. C. Kuo, and S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys. 95(8), 3916–3922 (2004).
[Crossref]

Dahlheimer, B.

M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, and M. Stutzmann, “Laser processing for patterned and freestanding nitride films,” Appl. Phys. Lett. 69(12), 1749–1751 (1996).
[Crossref]

Dimitrov, R.

M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, and M. Stutzmann, “Laser processing for patterned and freestanding nitride films,” Appl. Phys. Lett. 69(12), 1749–1751 (1996).
[Crossref]

Duquette, D. J.

S. Kim, J.-H. Jang, J.-S. Lee, and D. J. Duquette, “Stress behavior of electrodeposited copper films as mechanical supporters for light emitting diodes,” Electrochim. Acta 52(16), 5258–5265 (2007).
[Crossref]

Epler, J. E.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[Crossref]

Groos, G.

M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, and M. Stutzmann, “Laser processing for patterned and freestanding nitride films,” Appl. Phys. Lett. 69(12), 1749–1751 (1996).
[Crossref]

He, Z.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, and B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[Crossref]

Holcomb, M. O.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[Crossref]

Horng, R. H.

R. H. Horng, Y. A. Lu, and D. S. Wuu, “Light Extraction Investigation for Thin-Film GaN Light-Emitting Diodes with Imbedded Electrodes,” IEEE Photon. Technol. Lett. 23(1), 54–56 (2011).
[Crossref]

R. H. Horng, S. H. Huang, C. Y. Hsieh, X. Zheng, and D. S. Wuu, “Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors,” IEEE J. Quantum Electron. 44(11), 1116–1123 (2008).
[Crossref]

S. H. Huang, R. H. Horng, S. L. Li, K. W. Yen, D. S. Wuu, C. K. Lin, and H. Liu, “Thermally stable mirror structures for vertical-conducting GaN/mirror/Si light-emitting diodes,” IEEE Photon. Technol. Lett. 19(23), 1913–1915 (2007).
[Crossref]

Hsieh, C. Y.

R. H. Horng, S. H. Huang, C. Y. Hsieh, X. Zheng, and D. S. Wuu, “Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors,” IEEE J. Quantum Electron. 44(11), 1116–1123 (2008).
[Crossref]

Huang, S. H.

R. H. Horng, S. H. Huang, C. Y. Hsieh, X. Zheng, and D. S. Wuu, “Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors,” IEEE J. Quantum Electron. 44(11), 1116–1123 (2008).
[Crossref]

S. H. Huang, R. H. Horng, S. L. Li, K. W. Yen, D. S. Wuu, C. K. Lin, and H. Liu, “Thermally stable mirror structures for vertical-conducting GaN/mirror/Si light-emitting diodes,” IEEE Photon. Technol. Lett. 19(23), 1913–1915 (2007).
[Crossref]

Jang, J.-H.

S. Kim, J.-H. Jang, J.-S. Lee, and D. J. Duquette, “Stress behavior of electrodeposited copper films as mechanical supporters for light emitting diodes,” Electrochim. Acta 52(16), 5258–5265 (2007).
[Crossref]

Johnson, N. M.

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
[Crossref]

Kelly, M. K.

M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, and M. Stutzmann, “Laser processing for patterned and freestanding nitride films,” Appl. Phys. Lett. 69(12), 1749–1751 (1996).
[Crossref]

Kim, S.

S. Kim, J.-H. Jang, J.-S. Lee, and D. J. Duquette, “Stress behavior of electrodeposited copper films as mechanical supporters for light emitting diodes,” Electrochim. Acta 52(16), 5258–5265 (2007).
[Crossref]

Kneissl, M.

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
[Crossref]

Krames, M. R.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[Crossref]

Kuo, H. C.

C. F. Chu, F. I. Lai, J. T. Chu, C. C. Yu, C. F. Lin, H. C. Kuo, and S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys. 95(8), 3916–3922 (2004).
[Crossref]

Lai, F. I.

C. F. Chu, F. I. Lai, J. T. Chu, C. C. Yu, C. F. Lin, H. C. Kuo, and S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys. 95(8), 3916–3922 (2004).
[Crossref]

Lee, J.-S.

S. Kim, J.-H. Jang, J.-S. Lee, and D. J. Duquette, “Stress behavior of electrodeposited copper films as mechanical supporters for light emitting diodes,” Electrochim. Acta 52(16), 5258–5265 (2007).
[Crossref]

Li, S. L.

S. H. Huang, R. H. Horng, S. L. Li, K. W. Yen, D. S. Wuu, C. K. Lin, and H. Liu, “Thermally stable mirror structures for vertical-conducting GaN/mirror/Si light-emitting diodes,” IEEE Photon. Technol. Lett. 19(23), 1913–1915 (2007).
[Crossref]

Lin, C. F.

C. F. Chu, F. I. Lai, J. T. Chu, C. C. Yu, C. F. Lin, H. C. Kuo, and S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys. 95(8), 3916–3922 (2004).
[Crossref]

Lin, C. K.

S. H. Huang, R. H. Horng, S. L. Li, K. W. Yen, D. S. Wuu, C. K. Lin, and H. Liu, “Thermally stable mirror structures for vertical-conducting GaN/mirror/Si light-emitting diodes,” IEEE Photon. Technol. Lett. 19(23), 1913–1915 (2007).
[Crossref]

Liu, H.

S. H. Huang, R. H. Horng, S. L. Li, K. W. Yen, D. S. Wuu, C. K. Lin, and H. Liu, “Thermally stable mirror structures for vertical-conducting GaN/mirror/Si light-emitting diodes,” IEEE Photon. Technol. Lett. 19(23), 1913–1915 (2007).
[Crossref]

Liu, M.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, and B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[Crossref]

Liu, Y.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, and B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[Crossref]

Loryuenyong, V.

Z. S. Luo, Y. Cho, V. Loryuenyong, T. Sands, N. W. Cheung, and M. C. Yoo, “Enhancement of (In, Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon,” IEEE Photon. Technol. Lett. 14(10), 1400–1402 (2002).
[Crossref]

Lu, Y. A.

R. H. Horng, Y. A. Lu, and D. S. Wuu, “Light Extraction Investigation for Thin-Film GaN Light-Emitting Diodes with Imbedded Electrodes,” IEEE Photon. Technol. Lett. 23(1), 54–56 (2011).
[Crossref]

Luo, R.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, and B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[Crossref]

Luo, Z. S.

Z. S. Luo, Y. Cho, V. Loryuenyong, T. Sands, N. W. Cheung, and M. C. Yoo, “Enhancement of (In, Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon,” IEEE Photon. Technol. Lett. 14(10), 1400–1402 (2002).
[Crossref]

Margalith, T.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[Crossref]

Martin, P. S.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[Crossref]

Mei, P.

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
[Crossref]

Ouyang, H.

Y. S. Wu, J.-H. Cheng, W. C. Peng, and H. Ouyang, “Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based lightemitting diodes,” Appl. Phys. Lett. 90(25), 251110 (2007).
[Crossref]

Peng, W. C.

Y. S. Wu, J.-H. Cheng, W. C. Peng, and H. Ouyang, “Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based lightemitting diodes,” Appl. Phys. Lett. 90(25), 251110 (2007).
[Crossref]

Ren, Y.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, and B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[Crossref]

Romano, L. T.

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
[Crossref]

Sands, T.

Z. S. Luo, Y. Cho, V. Loryuenyong, T. Sands, N. W. Cheung, and M. C. Yoo, “Enhancement of (In, Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon,” IEEE Photon. Technol. Lett. 14(10), 1400–1402 (2002).
[Crossref]

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
[Crossref]

W. S. Wong, T. Sands, and N. W. Cheung, “Damage-free separation of GaN thin films from sapphire substrates,” Appl. Phys. Lett. 72(5), 599–601 (1998).
[Crossref]

Shchekin, O. B.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[Crossref]

Steigerwald, D. A.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[Crossref]

Stutzmann, M.

M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, and M. Stutzmann, “Laser processing for patterned and freestanding nitride films,” Appl. Phys. Lett. 69(12), 1749–1751 (1996).
[Crossref]

Trottier, T. A.

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[Crossref]

Wang, S. C.

C. F. Chu, F. I. Lai, J. T. Chu, C. C. Yu, C. F. Lin, H. C. Kuo, and S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys. 95(8), 3916–3922 (2004).
[Crossref]

Wang, Y.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, and B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[Crossref]

Wong, W. S.

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
[Crossref]

W. S. Wong, T. Sands, and N. W. Cheung, “Damage-free separation of GaN thin films from sapphire substrates,” Appl. Phys. Lett. 72(5), 599–601 (1998).
[Crossref]

Wu, Y. S.

Y. S. Wu, J.-H. Cheng, W. C. Peng, and H. Ouyang, “Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based lightemitting diodes,” Appl. Phys. Lett. 90(25), 251110 (2007).
[Crossref]

Wu, Z.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, and B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[Crossref]

Wuu, D. S.

R. H. Horng, Y. A. Lu, and D. S. Wuu, “Light Extraction Investigation for Thin-Film GaN Light-Emitting Diodes with Imbedded Electrodes,” IEEE Photon. Technol. Lett. 23(1), 54–56 (2011).
[Crossref]

R. H. Horng, S. H. Huang, C. Y. Hsieh, X. Zheng, and D. S. Wuu, “Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors,” IEEE J. Quantum Electron. 44(11), 1116–1123 (2008).
[Crossref]

S. H. Huang, R. H. Horng, S. L. Li, K. W. Yen, D. S. Wuu, C. K. Lin, and H. Liu, “Thermally stable mirror structures for vertical-conducting GaN/mirror/Si light-emitting diodes,” IEEE Photon. Technol. Lett. 19(23), 1913–1915 (2007).
[Crossref]

Xiang, P.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, and B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[Crossref]

Yang, W.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, and B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[Crossref]

Yang, Y.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, and B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[Crossref]

Yen, K. W.

S. H. Huang, R. H. Horng, S. L. Li, K. W. Yen, D. S. Wuu, C. K. Lin, and H. Liu, “Thermally stable mirror structures for vertical-conducting GaN/mirror/Si light-emitting diodes,” IEEE Photon. Technol. Lett. 19(23), 1913–1915 (2007).
[Crossref]

Yoo, M. C.

Z. S. Luo, Y. Cho, V. Loryuenyong, T. Sands, N. W. Cheung, and M. C. Yoo, “Enhancement of (In, Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon,” IEEE Photon. Technol. Lett. 14(10), 1400–1402 (2002).
[Crossref]

Yu, C. C.

C. F. Chu, F. I. Lai, J. T. Chu, C. C. Yu, C. F. Lin, H. C. Kuo, and S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys. 95(8), 3916–3922 (2004).
[Crossref]

Zhang, B.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, and B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[Crossref]

Zhang, X.

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, and B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[Crossref]

Zheng, X.

R. H. Horng, S. H. Huang, C. Y. Hsieh, X. Zheng, and D. S. Wuu, “Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors,” IEEE J. Quantum Electron. 44(11), 1116–1123 (2008).
[Crossref]

Appl. Phys. Lett. (6)

W. S. Wong, T. Sands, N. W. Cheung, M. Kneissl, D. P. Bour, P. Mei, L. T. Romano, and N. M. Johnson, “Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off,” Appl. Phys. Lett. 75(10), 1360–1362 (1999).
[Crossref]

M. K. Kelly, O. Ambacher, B. Dahlheimer, G. Groos, R. Dimitrov, H. Angerer, and M. Stutzmann, “Laser processing for patterned and freestanding nitride films,” Appl. Phys. Lett. 69(12), 1749–1751 (1996).
[Crossref]

W. S. Wong, T. Sands, and N. W. Cheung, “Damage-free separation of GaN thin films from sapphire substrates,” Appl. Phys. Lett. 72(5), 599–601 (1998).
[Crossref]

Y. S. Wu, J.-H. Cheng, W. C. Peng, and H. Ouyang, “Effects of laser sources on the reverse-bias leakages of laser lift-off GaN-based lightemitting diodes,” Appl. Phys. Lett. 90(25), 251110 (2007).
[Crossref]

O. B. Shchekin, J. E. Epler, T. A. Trottier, T. Margalith, D. A. Steigerwald, M. O. Holcomb, P. S. Martin, and M. R. Krames, “High performance thin-film flip-chip InGaN–GaN light-emitting diodes,” Appl. Phys. Lett. 89(7), 071109 (2006).
[Crossref]

T. Chen, Y. Wang, P. Xiang, R. Luo, M. Liu, W. Yang, Y. Ren, Z. He, Y. Yang, W. Chen, X. Zhang, Z. Wu, Y. Liu, and B. Zhang, “Crack-free InGaN multiple quantum wells light-emitting diodes structures transferred from Si (111) substrate onto electroplating copper submount with embedded electrodes,” Appl. Phys. Lett. 100(24), 241112 (2012).
[Crossref]

Electrochim. Acta (1)

S. Kim, J.-H. Jang, J.-S. Lee, and D. J. Duquette, “Stress behavior of electrodeposited copper films as mechanical supporters for light emitting diodes,” Electrochim. Acta 52(16), 5258–5265 (2007).
[Crossref]

IEEE J. Quantum Electron. (1)

R. H. Horng, S. H. Huang, C. Y. Hsieh, X. Zheng, and D. S. Wuu, “Enhanced luminance efficiency of wafer-bonded InGaN-GaN LEDs with double-side textured surfaces and omnidirectional reflectors,” IEEE J. Quantum Electron. 44(11), 1116–1123 (2008).
[Crossref]

IEEE Photon. Technol. Lett. (3)

R. H. Horng, Y. A. Lu, and D. S. Wuu, “Light Extraction Investigation for Thin-Film GaN Light-Emitting Diodes with Imbedded Electrodes,” IEEE Photon. Technol. Lett. 23(1), 54–56 (2011).
[Crossref]

S. H. Huang, R. H. Horng, S. L. Li, K. W. Yen, D. S. Wuu, C. K. Lin, and H. Liu, “Thermally stable mirror structures for vertical-conducting GaN/mirror/Si light-emitting diodes,” IEEE Photon. Technol. Lett. 19(23), 1913–1915 (2007).
[Crossref]

Z. S. Luo, Y. Cho, V. Loryuenyong, T. Sands, N. W. Cheung, and M. C. Yoo, “Enhancement of (In, Ga)N light-emitting diode performance by laser liftoff and transfer from sapphire to silicon,” IEEE Photon. Technol. Lett. 14(10), 1400–1402 (2002).
[Crossref]

J. Appl. Phys. (1)

C. F. Chu, F. I. Lai, J. T. Chu, C. C. Yu, C. F. Lin, H. C. Kuo, and S. C. Wang, “Study of GaN light-emitting diodes fabricated by laser lift-off technique,” J. Appl. Phys. 95(8), 3916–3922 (2004).
[Crossref]

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Figures (5)

Fig. 1
Fig. 1

Process flow: (a) epilayer, (b) mesa, (c) metal pad, (d) plane-view SEM image of CSB-LED, (e) insulator, (f) contact metal, (g) wafer bonding, (h) LLO, (i) surface textured, (j) expose contact metal, (k) the schematic of WTIE-LED and (l) plane-view SEM image of WTIE-LED.

Fig. 2
Fig. 2

XRD in 2θ/ω scan mode of CSB-LEDs on sapphire and WTIE-LEDs on silicon

Fig. 3
Fig. 3

Current as a function of voltage for WTIE-LEDs and CSB-LEDs

Fig. 4
Fig. 4

Luminance intensity as a function of injection current for WTIE-LEDs and CSB-LEDs

Fig. 5
Fig. 5

Output power as a function of injection current for WTIE-LEDs and CSB-LEDs.

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