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GaN light emitting diodes with wing-type imbedded contacts

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Abstract

A wing-type imbedded electrodes was introduced into the lateral light emitting diode configuration (WTIE-LEDs) to reduce the effect of light shading of electrode in conventional sapphire-based LEDs (CSB-LEDs). The WTIE-LEDs with double-side roughened surface structures not only can eliminate the light shading of electrode and bonding wire, but also increase the light extraction and light output power. Contrast to CSB-LEDs, a 79% enhancement of output intensity in the WTIE-LED was obtained at 100 mA injection current. Similarly, the output power of packaged WTIE-LEDs was enhanced 59% higher compared with the packaged CSB-LEDs at the same injection condition. Therefore, using the imbedded contact to reduce light shading would be a promising prospective for LEDs to achieve high output power.

©2012 Optical Society of America

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Figures (5)

Fig. 1
Fig. 1 Process flow: (a) epilayer, (b) mesa, (c) metal pad, (d) plane-view SEM image of CSB-LED, (e) insulator, (f) contact metal, (g) wafer bonding, (h) LLO, (i) surface textured, (j) expose contact metal, (k) the schematic of WTIE-LED and (l) plane-view SEM image of WTIE-LED.
Fig. 2
Fig. 2 XRD in 2θ/ω scan mode of CSB-LEDs on sapphire and WTIE-LEDs on silicon
Fig. 3
Fig. 3 Current as a function of voltage for WTIE-LEDs and CSB-LEDs
Fig. 4
Fig. 4 Luminance intensity as a function of injection current for WTIE-LEDs and CSB-LEDs
Fig. 5
Fig. 5 Output power as a function of injection current for WTIE-LEDs and CSB-LEDs.
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