Abstract

We achieved 50-Gb/s operation of a ring-resonator-based silicon modulator for the first time. The pin-diode phase shifter, which consists of a side-wall-grating waveguide, was loaded into the ring resonator. The forward-biased operation mode was applied, which exhibited a VπL as small as 0.28 V·cm at 25 GHz. The driving voltage and optical insertion loss at 50-Gb/s were 1.96 Vpp and 5.2 dB, respectively.

© 2013 OSA

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. A. F. Benner, M. Ignatowski, J. A. Kash, D. M. Kuchta, and M. B. Ritter, “Exploitation of optical interconnects in future server architectures,” IBM J. Res. Develop.49(4), 755–775 (2005).
    [CrossRef]
  2. L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE6125(612502), 612502, 612502-10 (2006).
    [CrossRef]
  3. D. A. B. Miller, “Device requirements for optical interconnects to silicon chips,” Proc. IEEE97(7), 1166–1185 (2009).
    [CrossRef]
  4. Y. Urino, T. Shimizu, M. Okano, N. Hatori, M. Ishizaka, T. Yamamoto, T. Baba, T. Akagawa, S. Akiyama, T. Usuki, D. Okamoto, M. Miura, M. Noguchi, J. Fujikata, D. Shimura, H. Okayama, T. Tsuchizawa, T. Watanabe, K. Yamada, S. Itabashi, E. Saito, T. Nakamura, and Y. Arakawa, “First demonstration of high density optical interconnects integrated with lasers, optical modulators and photodetectors on a single silicon substrate,” in 37th European Conference and Exposition on Optical Communications, OSA Technical Digest (CD) (Optical Society of America, 2011), paper We.9.LeSaleve.4.
  5. G. T. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photonics4(8), 518–526 (2010).
    [CrossRef]
  6. S. J. Spector, C. M. Sorace, M. W. Geis, M. E. Grein, J. U. Yoon, T. M. Lyszczarz, E. P. Ippen, and F. X. Kärtner, “Operation and optimization of silicon-diode-based optical modulators,” IEEE J. Sel. Top. Quantum Electron.16(1), 165–172 (2010).
    [CrossRef]
  7. M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-voltage, compact, depletion-mode, silicon Mach Zehnder modulator,” IEEE J. Sel. Top. Quantum Electron.16(1), 159–164 (2010).
    [CrossRef]
  8. L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high speed applications,” Electron. Lett.43(22), 1196–1197 (2007).
    [CrossRef]
  9. D. J. Thomson, F. Y. Gardes, Y. Hu, G. Mashanovich, M. Fournier, P. Grosse, J.-M. Fedeli, and G. T. Reed, “High contrast 40Gbit/s optical modulation in silicon,” Opt. Express19(12), 11507–11516 (2011).
    [CrossRef] [PubMed]
  10. D. J. Thomson, F. Y. Gardes, J.-M. M. Fedeli, S. Zlatanovic, Y. Hu, B. P.-P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett.24(4), 234–236 (2012).
    [CrossRef]
  11. W. M. Green, M. J. Rooks, L. Sekaric, and Y. A. Vlasov, “Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator,” Opt. Express15(25), 17106–17113 (2007).
    [CrossRef] [PubMed]
  12. S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Takahashi, N. Hirayama, H. Takahashi, Y. Noguchi, H. Okayama, T. Horikawa, and T. Usuki, “12.5-Gb/s operation with 0.29-V·cm VπL using silicon Mach-Zehnder modulator based-on forward-biased pin diode,” Opt. Express20(3), 2911–2923 (2012).
    [CrossRef] [PubMed]
  13. S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Noguchi, E. Saito, Y. Noguchi, N. Hirayama, T. Horikawa, and T. Usuki, “50-Gb/s silicon modulator using 250-μm-long phase shifter based-on forward-biased pin diodes,” Proc. IEEE Conf. on Group IV Photonics, Paper ThC2 (2012).
  14. S. Akiyama, M. Imai, T. Baba, T. Akagawa, N. Hirayama, Y. Noguchi, M. Seki, K. Koshino, M. Toyama, T. Horikawa, and T. Usuki, “Compact PIN-diode-based silicon modulator using side-wall-grating waveguide, IEEE J. Sel. Top. Quantum Electron. (submitted to).
  15. Q. Xu, S. Manipatruni, B. Schmidt, J. Shakya, and M. Lipson, “12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators,” Opt. Express15(2), 430–436 (2007).
    [CrossRef] [PubMed]
  16. S. Manipatruni, Q. Xu, B. Schmidt, J. Shakya, and M. Lipson, “High speed carrier injection 18 Gb/s silicon micro-ring electro-optic modulator,” in Proceedings of LEOS2007 (IEEE 2007), 537–538.
    [CrossRef]
  17. J.-B. You, M. Park, J.-W. Park, and G. Kim, “12.5 Gbps optical modulation of silicon racetrack resonator based on carrier-depletion in asymmetric p-n diode,” Opt. Express16(22), 18340–18344 (2008).
    [CrossRef] [PubMed]
  18. Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature435(7040), 325–327 (2005).
    [CrossRef] [PubMed]
  19. F. Y. Gardes, A. Brimont, P. Sanchis, G. Rasigade, D. Marris-Morini, L. O’Faolain, F. Dong, J. M. Fedeli, P. Dumon, L. Vivien, T. F. Krauss, G. T. Reed, and J. Martí, “High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode,” Opt. Express17(24), 21986–21991 (2009).
    [CrossRef] [PubMed]
  20. P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R. Shafiiha, C.-C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, “Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator,” Opt. Express17(25), 22484–22490 (2009).
    [CrossRef] [PubMed]
  21. S. Akiyama, T. Kurahashi, T. Baba, N. Hatori, T. Usuki, and T. Yamamoto, “A 1V peak-to-peak driven 10-Gbps slow-light silicon Mach-Zehnder modulator using cascaded ring resonators,” Appl. Phys. Express3(7), 072202 (2010).
    [CrossRef]
  22. J. C. Rosenberg, W. M. Green, S. Assefa, T. Barwicz, M. Yang, S. M. Shank, and Y. A. Vlasov, “Low-power 30 Gbps silicon microring modulator,” in Proceedings of Conference on Lasers and Electro-Optics / Quantum Electronics and Laser Science Conference, OSA Technical Digest (CD) (Optical Society of America, 2011), paper PDPB9.
  23. G. Li, X. Zheng, J. Yao, H. Thacker, I. Shubin, Y. Luo, K. Raj, J. E. Cunningham, and A. V. Krishnamoorthy, “25Gb/s 1V-driving CMOS ring modulator with integrated thermal tuning,” Opt. Express19(21), 20435–20443 (2011).
    [CrossRef] [PubMed]
  24. H. C. Nguyen, Y. Sakai, M. Shinkawa, N. Ishikura, and T. Baba, “10 Gb/s operation of photonic crystal silicon optical modulators,” Opt. Express19(14), 13000–13007 (2011).
    [CrossRef] [PubMed]
  25. H. C. Nguyen, S. Hashimoto, M. Shinkawa, and T. Baba, “Sub-100 μm, 40 Gb/s photonic crystal silicon optical modulators,” Proc. IEEE Conf. on Group IV Photonics, Paper PD3 (2012).
  26. A. Brimont, D. J. Thomson, P. Sanchis, J. Herrera, F. Y. Gardes, J. M. Fedeli, G. T. Reed, and J. Martí, “High speed silicon electro-optical modulators enhanced via slow light propagation,” Opt. Express19(21), 20876–20885 (2011).
    [CrossRef] [PubMed]
  27. G. Li, X. Zheng, H. Thacker, J. Yao, Y. Luo, I. Shubin, K. Raj, J. E. Cunningham, and A. V. Krishnamoorthy, “40 Gb/s thermally tunable CMOS ring resonator,” Proc. IEEE Conf. on Group IV Photonics, Paper PD4 (2012).
  28. X. Xiao, X. Li, H. Xu, Y. Hu, K. Xiong, Z. Li, T. Chu, J. Yu, and Y. Yu, “44-Gb/s silicon microring modulators based on zigzag pn junctions,” IEEE Technol. Lett.24(19), 1712–1714 (2012).
    [CrossRef]
  29. W. D. Sacher and J. K. S. Poon, “Dynamics of microring resonator modulators,” Opt. Express16(20), 15741–15753 (2008).
    [CrossRef] [PubMed]

2012

D. J. Thomson, F. Y. Gardes, J.-M. M. Fedeli, S. Zlatanovic, Y. Hu, B. P.-P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett.24(4), 234–236 (2012).
[CrossRef]

X. Xiao, X. Li, H. Xu, Y. Hu, K. Xiong, Z. Li, T. Chu, J. Yu, and Y. Yu, “44-Gb/s silicon microring modulators based on zigzag pn junctions,” IEEE Technol. Lett.24(19), 1712–1714 (2012).
[CrossRef]

S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Takahashi, N. Hirayama, H. Takahashi, Y. Noguchi, H. Okayama, T. Horikawa, and T. Usuki, “12.5-Gb/s operation with 0.29-V·cm VπL using silicon Mach-Zehnder modulator based-on forward-biased pin diode,” Opt. Express20(3), 2911–2923 (2012).
[CrossRef] [PubMed]

2011

2010

S. Akiyama, T. Kurahashi, T. Baba, N. Hatori, T. Usuki, and T. Yamamoto, “A 1V peak-to-peak driven 10-Gbps slow-light silicon Mach-Zehnder modulator using cascaded ring resonators,” Appl. Phys. Express3(7), 072202 (2010).
[CrossRef]

G. T. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photonics4(8), 518–526 (2010).
[CrossRef]

S. J. Spector, C. M. Sorace, M. W. Geis, M. E. Grein, J. U. Yoon, T. M. Lyszczarz, E. P. Ippen, and F. X. Kärtner, “Operation and optimization of silicon-diode-based optical modulators,” IEEE J. Sel. Top. Quantum Electron.16(1), 165–172 (2010).
[CrossRef]

M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-voltage, compact, depletion-mode, silicon Mach Zehnder modulator,” IEEE J. Sel. Top. Quantum Electron.16(1), 159–164 (2010).
[CrossRef]

2009

2008

2007

2006

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE6125(612502), 612502, 612502-10 (2006).
[CrossRef]

2005

A. F. Benner, M. Ignatowski, J. A. Kash, D. M. Kuchta, and M. B. Ritter, “Exploitation of optical interconnects in future server architectures,” IBM J. Res. Develop.49(4), 755–775 (2005).
[CrossRef]

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature435(7040), 325–327 (2005).
[CrossRef] [PubMed]

Ahn, D.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE6125(612502), 612502, 612502-10 (2006).
[CrossRef]

Akagawa, T.

S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Takahashi, N. Hirayama, H. Takahashi, Y. Noguchi, H. Okayama, T. Horikawa, and T. Usuki, “12.5-Gb/s operation with 0.29-V·cm VπL using silicon Mach-Zehnder modulator based-on forward-biased pin diode,” Opt. Express20(3), 2911–2923 (2012).
[CrossRef] [PubMed]

S. Akiyama, M. Imai, T. Baba, T. Akagawa, N. Hirayama, Y. Noguchi, M. Seki, K. Koshino, M. Toyama, T. Horikawa, and T. Usuki, “Compact PIN-diode-based silicon modulator using side-wall-grating waveguide, IEEE J. Sel. Top. Quantum Electron. (submitted to).

Akiyama, S.

S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Takahashi, N. Hirayama, H. Takahashi, Y. Noguchi, H. Okayama, T. Horikawa, and T. Usuki, “12.5-Gb/s operation with 0.29-V·cm VπL using silicon Mach-Zehnder modulator based-on forward-biased pin diode,” Opt. Express20(3), 2911–2923 (2012).
[CrossRef] [PubMed]

S. Akiyama, T. Kurahashi, T. Baba, N. Hatori, T. Usuki, and T. Yamamoto, “A 1V peak-to-peak driven 10-Gbps slow-light silicon Mach-Zehnder modulator using cascaded ring resonators,” Appl. Phys. Express3(7), 072202 (2010).
[CrossRef]

S. Akiyama, M. Imai, T. Baba, T. Akagawa, N. Hirayama, Y. Noguchi, M. Seki, K. Koshino, M. Toyama, T. Horikawa, and T. Usuki, “Compact PIN-diode-based silicon modulator using side-wall-grating waveguide, IEEE J. Sel. Top. Quantum Electron. (submitted to).

Alic, N.

D. J. Thomson, F. Y. Gardes, J.-M. M. Fedeli, S. Zlatanovic, Y. Hu, B. P.-P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett.24(4), 234–236 (2012).
[CrossRef]

Apsel, A. B.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE6125(612502), 612502, 612502-10 (2006).
[CrossRef]

Asghari, M.

Baba, T.

S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Takahashi, N. Hirayama, H. Takahashi, Y. Noguchi, H. Okayama, T. Horikawa, and T. Usuki, “12.5-Gb/s operation with 0.29-V·cm VπL using silicon Mach-Zehnder modulator based-on forward-biased pin diode,” Opt. Express20(3), 2911–2923 (2012).
[CrossRef] [PubMed]

H. C. Nguyen, Y. Sakai, M. Shinkawa, N. Ishikura, and T. Baba, “10 Gb/s operation of photonic crystal silicon optical modulators,” Opt. Express19(14), 13000–13007 (2011).
[CrossRef] [PubMed]

S. Akiyama, T. Kurahashi, T. Baba, N. Hatori, T. Usuki, and T. Yamamoto, “A 1V peak-to-peak driven 10-Gbps slow-light silicon Mach-Zehnder modulator using cascaded ring resonators,” Appl. Phys. Express3(7), 072202 (2010).
[CrossRef]

S. Akiyama, M. Imai, T. Baba, T. Akagawa, N. Hirayama, Y. Noguchi, M. Seki, K. Koshino, M. Toyama, T. Horikawa, and T. Usuki, “Compact PIN-diode-based silicon modulator using side-wall-grating waveguide, IEEE J. Sel. Top. Quantum Electron. (submitted to).

Basak, J.

L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high speed applications,” Electron. Lett.43(22), 1196–1197 (2007).
[CrossRef]

Beals, M.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE6125(612502), 612502, 612502-10 (2006).
[CrossRef]

Benner, A. F.

A. F. Benner, M. Ignatowski, J. A. Kash, D. M. Kuchta, and M. B. Ritter, “Exploitation of optical interconnects in future server architectures,” IBM J. Res. Develop.49(4), 755–775 (2005).
[CrossRef]

Brimont, A.

Carothers, D.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE6125(612502), 612502, 612502-10 (2006).
[CrossRef]

Chen, Y.-K.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE6125(612502), 612502, 612502-10 (2006).
[CrossRef]

Chetrit, Y.

L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high speed applications,” Electron. Lett.43(22), 1196–1197 (2007).
[CrossRef]

Chu, T.

X. Xiao, X. Li, H. Xu, Y. Hu, K. Xiong, Z. Li, T. Chu, J. Yu, and Y. Yu, “44-Gb/s silicon microring modulators based on zigzag pn junctions,” IEEE Technol. Lett.24(19), 1712–1714 (2012).
[CrossRef]

Cohen, R.

L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high speed applications,” Electron. Lett.43(22), 1196–1197 (2007).
[CrossRef]

Conway, T.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE6125(612502), 612502, 612502-10 (2006).
[CrossRef]

Cunningham, J. E.

Dong, F.

Dong, P.

Dumon, P.

Fedeli, J. M.

Fedeli, J.-M.

Fedeli, J.-M. M.

D. J. Thomson, F. Y. Gardes, J.-M. M. Fedeli, S. Zlatanovic, Y. Hu, B. P.-P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett.24(4), 234–236 (2012).
[CrossRef]

Feng, D.

Fournier, M.

Gardes, F. Y.

Geis, M. W.

S. J. Spector, C. M. Sorace, M. W. Geis, M. E. Grein, J. U. Yoon, T. M. Lyszczarz, E. P. Ippen, and F. X. Kärtner, “Operation and optimization of silicon-diode-based optical modulators,” IEEE J. Sel. Top. Quantum Electron.16(1), 165–172 (2010).
[CrossRef]

Gill, D. M.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE6125(612502), 612502, 612502-10 (2006).
[CrossRef]

Green, W. M.

Grein, M. E.

S. J. Spector, C. M. Sorace, M. W. Geis, M. E. Grein, J. U. Yoon, T. M. Lyszczarz, E. P. Ippen, and F. X. Kärtner, “Operation and optimization of silicon-diode-based optical modulators,” IEEE J. Sel. Top. Quantum Electron.16(1), 165–172 (2010).
[CrossRef]

Grosse, P.

Grove, M.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE6125(612502), 612502, 612502-10 (2006).
[CrossRef]

Hatori, N.

S. Akiyama, T. Kurahashi, T. Baba, N. Hatori, T. Usuki, and T. Yamamoto, “A 1V peak-to-peak driven 10-Gbps slow-light silicon Mach-Zehnder modulator using cascaded ring resonators,” Appl. Phys. Express3(7), 072202 (2010).
[CrossRef]

Herrera, J.

Hirayama, N.

S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Takahashi, N. Hirayama, H. Takahashi, Y. Noguchi, H. Okayama, T. Horikawa, and T. Usuki, “12.5-Gb/s operation with 0.29-V·cm VπL using silicon Mach-Zehnder modulator based-on forward-biased pin diode,” Opt. Express20(3), 2911–2923 (2012).
[CrossRef] [PubMed]

S. Akiyama, M. Imai, T. Baba, T. Akagawa, N. Hirayama, Y. Noguchi, M. Seki, K. Koshino, M. Toyama, T. Horikawa, and T. Usuki, “Compact PIN-diode-based silicon modulator using side-wall-grating waveguide, IEEE J. Sel. Top. Quantum Electron. (submitted to).

Hong, C.-Y.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE6125(612502), 612502, 612502-10 (2006).
[CrossRef]

Horikawa, T.

S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Takahashi, N. Hirayama, H. Takahashi, Y. Noguchi, H. Okayama, T. Horikawa, and T. Usuki, “12.5-Gb/s operation with 0.29-V·cm VπL using silicon Mach-Zehnder modulator based-on forward-biased pin diode,” Opt. Express20(3), 2911–2923 (2012).
[CrossRef] [PubMed]

S. Akiyama, M. Imai, T. Baba, T. Akagawa, N. Hirayama, Y. Noguchi, M. Seki, K. Koshino, M. Toyama, T. Horikawa, and T. Usuki, “Compact PIN-diode-based silicon modulator using side-wall-grating waveguide, IEEE J. Sel. Top. Quantum Electron. (submitted to).

Hu, Y.

D. J. Thomson, F. Y. Gardes, J.-M. M. Fedeli, S. Zlatanovic, Y. Hu, B. P.-P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett.24(4), 234–236 (2012).
[CrossRef]

X. Xiao, X. Li, H. Xu, Y. Hu, K. Xiong, Z. Li, T. Chu, J. Yu, and Y. Yu, “44-Gb/s silicon microring modulators based on zigzag pn junctions,” IEEE Technol. Lett.24(19), 1712–1714 (2012).
[CrossRef]

D. J. Thomson, F. Y. Gardes, Y. Hu, G. Mashanovich, M. Fournier, P. Grosse, J.-M. Fedeli, and G. T. Reed, “High contrast 40Gbit/s optical modulation in silicon,” Opt. Express19(12), 11507–11516 (2011).
[CrossRef] [PubMed]

Ignatowski, M.

A. F. Benner, M. Ignatowski, J. A. Kash, D. M. Kuchta, and M. B. Ritter, “Exploitation of optical interconnects in future server architectures,” IBM J. Res. Develop.49(4), 755–775 (2005).
[CrossRef]

Imai, M.

S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Takahashi, N. Hirayama, H. Takahashi, Y. Noguchi, H. Okayama, T. Horikawa, and T. Usuki, “12.5-Gb/s operation with 0.29-V·cm VπL using silicon Mach-Zehnder modulator based-on forward-biased pin diode,” Opt. Express20(3), 2911–2923 (2012).
[CrossRef] [PubMed]

S. Akiyama, M. Imai, T. Baba, T. Akagawa, N. Hirayama, Y. Noguchi, M. Seki, K. Koshino, M. Toyama, T. Horikawa, and T. Usuki, “Compact PIN-diode-based silicon modulator using side-wall-grating waveguide, IEEE J. Sel. Top. Quantum Electron. (submitted to).

Ippen, E. P.

S. J. Spector, C. M. Sorace, M. W. Geis, M. E. Grein, J. U. Yoon, T. M. Lyszczarz, E. P. Ippen, and F. X. Kärtner, “Operation and optimization of silicon-diode-based optical modulators,” IEEE J. Sel. Top. Quantum Electron.16(1), 165–172 (2010).
[CrossRef]

Ishikura, N.

Izhaky, N.

L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high speed applications,” Electron. Lett.43(22), 1196–1197 (2007).
[CrossRef]

Kärtner, F. X.

S. J. Spector, C. M. Sorace, M. W. Geis, M. E. Grein, J. U. Yoon, T. M. Lyszczarz, E. P. Ippen, and F. X. Kärtner, “Operation and optimization of silicon-diode-based optical modulators,” IEEE J. Sel. Top. Quantum Electron.16(1), 165–172 (2010).
[CrossRef]

Kash, J. A.

A. F. Benner, M. Ignatowski, J. A. Kash, D. M. Kuchta, and M. B. Ritter, “Exploitation of optical interconnects in future server architectures,” IBM J. Res. Develop.49(4), 755–775 (2005).
[CrossRef]

Kim, G.

Kimerling, L. C.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE6125(612502), 612502, 612502-10 (2006).
[CrossRef]

Koshino, K.

S. Akiyama, M. Imai, T. Baba, T. Akagawa, N. Hirayama, Y. Noguchi, M. Seki, K. Koshino, M. Toyama, T. Horikawa, and T. Usuki, “Compact PIN-diode-based silicon modulator using side-wall-grating waveguide, IEEE J. Sel. Top. Quantum Electron. (submitted to).

Krauss, T. F.

Krishnamoorthy, A. V.

Kuchta, D. M.

A. F. Benner, M. Ignatowski, J. A. Kash, D. M. Kuchta, and M. B. Ritter, “Exploitation of optical interconnects in future server architectures,” IBM J. Res. Develop.49(4), 755–775 (2005).
[CrossRef]

Kung, C.-C.

Kuo, B. P.-P.

D. J. Thomson, F. Y. Gardes, J.-M. M. Fedeli, S. Zlatanovic, Y. Hu, B. P.-P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett.24(4), 234–236 (2012).
[CrossRef]

Kurahashi, T.

S. Akiyama, T. Kurahashi, T. Baba, N. Hatori, T. Usuki, and T. Yamamoto, “A 1V peak-to-peak driven 10-Gbps slow-light silicon Mach-Zehnder modulator using cascaded ring resonators,” Appl. Phys. Express3(7), 072202 (2010).
[CrossRef]

Lentine, A. L.

M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-voltage, compact, depletion-mode, silicon Mach Zehnder modulator,” IEEE J. Sel. Top. Quantum Electron.16(1), 159–164 (2010).
[CrossRef]

Li, G.

Li, X.

X. Xiao, X. Li, H. Xu, Y. Hu, K. Xiong, Z. Li, T. Chu, J. Yu, and Y. Yu, “44-Gb/s silicon microring modulators based on zigzag pn junctions,” IEEE Technol. Lett.24(19), 1712–1714 (2012).
[CrossRef]

Li, Z.

X. Xiao, X. Li, H. Xu, Y. Hu, K. Xiong, Z. Li, T. Chu, J. Yu, and Y. Yu, “44-Gb/s silicon microring modulators based on zigzag pn junctions,” IEEE Technol. Lett.24(19), 1712–1714 (2012).
[CrossRef]

Liang, H.

Liao, L.

L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high speed applications,” Electron. Lett.43(22), 1196–1197 (2007).
[CrossRef]

Liao, S.

Lipson, M.

Q. Xu, S. Manipatruni, B. Schmidt, J. Shakya, and M. Lipson, “12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators,” Opt. Express15(2), 430–436 (2007).
[CrossRef] [PubMed]

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE6125(612502), 612502, 612502-10 (2006).
[CrossRef]

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature435(7040), 325–327 (2005).
[CrossRef] [PubMed]

Liu, A.

L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high speed applications,” Electron. Lett.43(22), 1196–1197 (2007).
[CrossRef]

Liu, J.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE6125(612502), 612502, 612502-10 (2006).
[CrossRef]

Luo, Y.

Lyszczarz, T. M.

S. J. Spector, C. M. Sorace, M. W. Geis, M. E. Grein, J. U. Yoon, T. M. Lyszczarz, E. P. Ippen, and F. X. Kärtner, “Operation and optimization of silicon-diode-based optical modulators,” IEEE J. Sel. Top. Quantum Electron.16(1), 165–172 (2010).
[CrossRef]

Manipatruni, S.

Marris-Morini, D.

Martí, J.

Mashanovich, G.

Mashanovich, G. Z.

D. J. Thomson, F. Y. Gardes, J.-M. M. Fedeli, S. Zlatanovic, Y. Hu, B. P.-P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett.24(4), 234–236 (2012).
[CrossRef]

Michel, J.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE6125(612502), 612502, 612502-10 (2006).
[CrossRef]

Miller, D. A. B.

D. A. B. Miller, “Device requirements for optical interconnects to silicon chips,” Proc. IEEE97(7), 1166–1185 (2009).
[CrossRef]

Myslivets, E.

D. J. Thomson, F. Y. Gardes, J.-M. M. Fedeli, S. Zlatanovic, Y. Hu, B. P.-P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett.24(4), 234–236 (2012).
[CrossRef]

Nguyen, H.

L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high speed applications,” Electron. Lett.43(22), 1196–1197 (2007).
[CrossRef]

Nguyen, H. C.

Noguchi, Y.

S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Takahashi, N. Hirayama, H. Takahashi, Y. Noguchi, H. Okayama, T. Horikawa, and T. Usuki, “12.5-Gb/s operation with 0.29-V·cm VπL using silicon Mach-Zehnder modulator based-on forward-biased pin diode,” Opt. Express20(3), 2911–2923 (2012).
[CrossRef] [PubMed]

S. Akiyama, M. Imai, T. Baba, T. Akagawa, N. Hirayama, Y. Noguchi, M. Seki, K. Koshino, M. Toyama, T. Horikawa, and T. Usuki, “Compact PIN-diode-based silicon modulator using side-wall-grating waveguide, IEEE J. Sel. Top. Quantum Electron. (submitted to).

O’Faolain, L.

Okayama, H.

Pan, D.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE6125(612502), 612502, 612502-10 (2006).
[CrossRef]

Paniccia, M.

L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high speed applications,” Electron. Lett.43(22), 1196–1197 (2007).
[CrossRef]

Park, J.-W.

Park, M.

Patel, S. S.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE6125(612502), 612502, 612502-10 (2006).
[CrossRef]

Pomerene, A. T.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE6125(612502), 612502, 612502-10 (2006).
[CrossRef]

Poon, J. K. S.

Pradhan, S.

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature435(7040), 325–327 (2005).
[CrossRef] [PubMed]

Qian, W.

Radic, S.

D. J. Thomson, F. Y. Gardes, J.-M. M. Fedeli, S. Zlatanovic, Y. Hu, B. P.-P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett.24(4), 234–236 (2012).
[CrossRef]

Raj, K.

Rasigade, G.

Rasras, M.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE6125(612502), 612502, 612502-10 (2006).
[CrossRef]

Reed, G. T.

Ritter, M. B.

A. F. Benner, M. Ignatowski, J. A. Kash, D. M. Kuchta, and M. B. Ritter, “Exploitation of optical interconnects in future server architectures,” IBM J. Res. Develop.49(4), 755–775 (2005).
[CrossRef]

Rooks, M. J.

Rubin, D.

L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high speed applications,” Electron. Lett.43(22), 1196–1197 (2007).
[CrossRef]

Sacher, W. D.

Sakai, Y.

Sanchis, P.

Schmidt, B.

Sekaric, L.

Seki, M.

S. Akiyama, M. Imai, T. Baba, T. Akagawa, N. Hirayama, Y. Noguchi, M. Seki, K. Koshino, M. Toyama, T. Horikawa, and T. Usuki, “Compact PIN-diode-based silicon modulator using side-wall-grating waveguide, IEEE J. Sel. Top. Quantum Electron. (submitted to).

Shafiiha, R.

Shakya, J.

Shinkawa, M.

Shubin, I.

Sorace, C. M.

S. J. Spector, C. M. Sorace, M. W. Geis, M. E. Grein, J. U. Yoon, T. M. Lyszczarz, E. P. Ippen, and F. X. Kärtner, “Operation and optimization of silicon-diode-based optical modulators,” IEEE J. Sel. Top. Quantum Electron.16(1), 165–172 (2010).
[CrossRef]

Sparacin, D. K.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE6125(612502), 612502, 612502-10 (2006).
[CrossRef]

Spector, S. J.

S. J. Spector, C. M. Sorace, M. W. Geis, M. E. Grein, J. U. Yoon, T. M. Lyszczarz, E. P. Ippen, and F. X. Kärtner, “Operation and optimization of silicon-diode-based optical modulators,” IEEE J. Sel. Top. Quantum Electron.16(1), 165–172 (2010).
[CrossRef]

Takahashi, H.

Takahashi, M.

Thacker, H.

Thomson, D. J.

D. J. Thomson, F. Y. Gardes, J.-M. M. Fedeli, S. Zlatanovic, Y. Hu, B. P.-P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett.24(4), 234–236 (2012).
[CrossRef]

D. J. Thomson, F. Y. Gardes, Y. Hu, G. Mashanovich, M. Fournier, P. Grosse, J.-M. Fedeli, and G. T. Reed, “High contrast 40Gbit/s optical modulation in silicon,” Opt. Express19(12), 11507–11516 (2011).
[CrossRef] [PubMed]

A. Brimont, D. J. Thomson, P. Sanchis, J. Herrera, F. Y. Gardes, J. M. Fedeli, G. T. Reed, and J. Martí, “High speed silicon electro-optical modulators enhanced via slow light propagation,” Opt. Express19(21), 20876–20885 (2011).
[CrossRef] [PubMed]

G. T. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photonics4(8), 518–526 (2010).
[CrossRef]

Toyama, M.

S. Akiyama, M. Imai, T. Baba, T. Akagawa, N. Hirayama, Y. Noguchi, M. Seki, K. Koshino, M. Toyama, T. Horikawa, and T. Usuki, “Compact PIN-diode-based silicon modulator using side-wall-grating waveguide, IEEE J. Sel. Top. Quantum Electron. (submitted to).

Trotter, D. C.

M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-voltage, compact, depletion-mode, silicon Mach Zehnder modulator,” IEEE J. Sel. Top. Quantum Electron.16(1), 159–164 (2010).
[CrossRef]

Tu, K.-Y.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE6125(612502), 612502, 612502-10 (2006).
[CrossRef]

Usuki, T.

S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Takahashi, N. Hirayama, H. Takahashi, Y. Noguchi, H. Okayama, T. Horikawa, and T. Usuki, “12.5-Gb/s operation with 0.29-V·cm VπL using silicon Mach-Zehnder modulator based-on forward-biased pin diode,” Opt. Express20(3), 2911–2923 (2012).
[CrossRef] [PubMed]

S. Akiyama, T. Kurahashi, T. Baba, N. Hatori, T. Usuki, and T. Yamamoto, “A 1V peak-to-peak driven 10-Gbps slow-light silicon Mach-Zehnder modulator using cascaded ring resonators,” Appl. Phys. Express3(7), 072202 (2010).
[CrossRef]

S. Akiyama, M. Imai, T. Baba, T. Akagawa, N. Hirayama, Y. Noguchi, M. Seki, K. Koshino, M. Toyama, T. Horikawa, and T. Usuki, “Compact PIN-diode-based silicon modulator using side-wall-grating waveguide, IEEE J. Sel. Top. Quantum Electron. (submitted to).

Vivien, L.

Vlasov, Y. A.

Watts, M. R.

M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-voltage, compact, depletion-mode, silicon Mach Zehnder modulator,” IEEE J. Sel. Top. Quantum Electron.16(1), 159–164 (2010).
[CrossRef]

White, A. E.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE6125(612502), 612502, 612502-10 (2006).
[CrossRef]

Wong, C. W.

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE6125(612502), 612502, 612502-10 (2006).
[CrossRef]

Xiao, X.

X. Xiao, X. Li, H. Xu, Y. Hu, K. Xiong, Z. Li, T. Chu, J. Yu, and Y. Yu, “44-Gb/s silicon microring modulators based on zigzag pn junctions,” IEEE Technol. Lett.24(19), 1712–1714 (2012).
[CrossRef]

Xiong, K.

X. Xiao, X. Li, H. Xu, Y. Hu, K. Xiong, Z. Li, T. Chu, J. Yu, and Y. Yu, “44-Gb/s silicon microring modulators based on zigzag pn junctions,” IEEE Technol. Lett.24(19), 1712–1714 (2012).
[CrossRef]

Xu, H.

X. Xiao, X. Li, H. Xu, Y. Hu, K. Xiong, Z. Li, T. Chu, J. Yu, and Y. Yu, “44-Gb/s silicon microring modulators based on zigzag pn junctions,” IEEE Technol. Lett.24(19), 1712–1714 (2012).
[CrossRef]

Xu, Q.

Yamamoto, T.

S. Akiyama, T. Kurahashi, T. Baba, N. Hatori, T. Usuki, and T. Yamamoto, “A 1V peak-to-peak driven 10-Gbps slow-light silicon Mach-Zehnder modulator using cascaded ring resonators,” Appl. Phys. Express3(7), 072202 (2010).
[CrossRef]

Yao, J.

Yoon, J. U.

S. J. Spector, C. M. Sorace, M. W. Geis, M. E. Grein, J. U. Yoon, T. M. Lyszczarz, E. P. Ippen, and F. X. Kärtner, “Operation and optimization of silicon-diode-based optical modulators,” IEEE J. Sel. Top. Quantum Electron.16(1), 165–172 (2010).
[CrossRef]

You, J.-B.

Young, R. W.

M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-voltage, compact, depletion-mode, silicon Mach Zehnder modulator,” IEEE J. Sel. Top. Quantum Electron.16(1), 159–164 (2010).
[CrossRef]

Yu, J.

X. Xiao, X. Li, H. Xu, Y. Hu, K. Xiong, Z. Li, T. Chu, J. Yu, and Y. Yu, “44-Gb/s silicon microring modulators based on zigzag pn junctions,” IEEE Technol. Lett.24(19), 1712–1714 (2012).
[CrossRef]

Yu, Y.

X. Xiao, X. Li, H. Xu, Y. Hu, K. Xiong, Z. Li, T. Chu, J. Yu, and Y. Yu, “44-Gb/s silicon microring modulators based on zigzag pn junctions,” IEEE Technol. Lett.24(19), 1712–1714 (2012).
[CrossRef]

Zheng, D.

Zheng, X.

Zlatanovic, S.

D. J. Thomson, F. Y. Gardes, J.-M. M. Fedeli, S. Zlatanovic, Y. Hu, B. P.-P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett.24(4), 234–236 (2012).
[CrossRef]

Zortman, W. A.

M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-voltage, compact, depletion-mode, silicon Mach Zehnder modulator,” IEEE J. Sel. Top. Quantum Electron.16(1), 159–164 (2010).
[CrossRef]

Appl. Phys. Express

S. Akiyama, T. Kurahashi, T. Baba, N. Hatori, T. Usuki, and T. Yamamoto, “A 1V peak-to-peak driven 10-Gbps slow-light silicon Mach-Zehnder modulator using cascaded ring resonators,” Appl. Phys. Express3(7), 072202 (2010).
[CrossRef]

Electron. Lett.

L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high speed applications,” Electron. Lett.43(22), 1196–1197 (2007).
[CrossRef]

IBM J. Res. Develop.

A. F. Benner, M. Ignatowski, J. A. Kash, D. M. Kuchta, and M. B. Ritter, “Exploitation of optical interconnects in future server architectures,” IBM J. Res. Develop.49(4), 755–775 (2005).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron.

S. J. Spector, C. M. Sorace, M. W. Geis, M. E. Grein, J. U. Yoon, T. M. Lyszczarz, E. P. Ippen, and F. X. Kärtner, “Operation and optimization of silicon-diode-based optical modulators,” IEEE J. Sel. Top. Quantum Electron.16(1), 165–172 (2010).
[CrossRef]

M. R. Watts, W. A. Zortman, D. C. Trotter, R. W. Young, and A. L. Lentine, “Low-voltage, compact, depletion-mode, silicon Mach Zehnder modulator,” IEEE J. Sel. Top. Quantum Electron.16(1), 159–164 (2010).
[CrossRef]

S. Akiyama, M. Imai, T. Baba, T. Akagawa, N. Hirayama, Y. Noguchi, M. Seki, K. Koshino, M. Toyama, T. Horikawa, and T. Usuki, “Compact PIN-diode-based silicon modulator using side-wall-grating waveguide, IEEE J. Sel. Top. Quantum Electron. (submitted to).

IEEE Photon. Technol. Lett.

D. J. Thomson, F. Y. Gardes, J.-M. M. Fedeli, S. Zlatanovic, Y. Hu, B. P.-P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett.24(4), 234–236 (2012).
[CrossRef]

IEEE Technol. Lett.

X. Xiao, X. Li, H. Xu, Y. Hu, K. Xiong, Z. Li, T. Chu, J. Yu, and Y. Yu, “44-Gb/s silicon microring modulators based on zigzag pn junctions,” IEEE Technol. Lett.24(19), 1712–1714 (2012).
[CrossRef]

Nat. Photonics

G. T. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photonics4(8), 518–526 (2010).
[CrossRef]

Nature

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature435(7040), 325–327 (2005).
[CrossRef] [PubMed]

Opt. Express

Q. Xu, S. Manipatruni, B. Schmidt, J. Shakya, and M. Lipson, “12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators,” Opt. Express15(2), 430–436 (2007).
[CrossRef] [PubMed]

W. M. Green, M. J. Rooks, L. Sekaric, and Y. A. Vlasov, “Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator,” Opt. Express15(25), 17106–17113 (2007).
[CrossRef] [PubMed]

W. D. Sacher and J. K. S. Poon, “Dynamics of microring resonator modulators,” Opt. Express16(20), 15741–15753 (2008).
[CrossRef] [PubMed]

J.-B. You, M. Park, J.-W. Park, and G. Kim, “12.5 Gbps optical modulation of silicon racetrack resonator based on carrier-depletion in asymmetric p-n diode,” Opt. Express16(22), 18340–18344 (2008).
[CrossRef] [PubMed]

F. Y. Gardes, A. Brimont, P. Sanchis, G. Rasigade, D. Marris-Morini, L. O’Faolain, F. Dong, J. M. Fedeli, P. Dumon, L. Vivien, T. F. Krauss, G. T. Reed, and J. Martí, “High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode,” Opt. Express17(24), 21986–21991 (2009).
[CrossRef] [PubMed]

P. Dong, S. Liao, D. Feng, H. Liang, D. Zheng, R. Shafiiha, C.-C. Kung, W. Qian, G. Li, X. Zheng, A. V. Krishnamoorthy, and M. Asghari, “Low Vpp, ultralow-energy, compact, high-speed silicon electro-optic modulator,” Opt. Express17(25), 22484–22490 (2009).
[CrossRef] [PubMed]

D. J. Thomson, F. Y. Gardes, Y. Hu, G. Mashanovich, M. Fournier, P. Grosse, J.-M. Fedeli, and G. T. Reed, “High contrast 40Gbit/s optical modulation in silicon,” Opt. Express19(12), 11507–11516 (2011).
[CrossRef] [PubMed]

H. C. Nguyen, Y. Sakai, M. Shinkawa, N. Ishikura, and T. Baba, “10 Gb/s operation of photonic crystal silicon optical modulators,” Opt. Express19(14), 13000–13007 (2011).
[CrossRef] [PubMed]

G. Li, X. Zheng, J. Yao, H. Thacker, I. Shubin, Y. Luo, K. Raj, J. E. Cunningham, and A. V. Krishnamoorthy, “25Gb/s 1V-driving CMOS ring modulator with integrated thermal tuning,” Opt. Express19(21), 20435–20443 (2011).
[CrossRef] [PubMed]

A. Brimont, D. J. Thomson, P. Sanchis, J. Herrera, F. Y. Gardes, J. M. Fedeli, G. T. Reed, and J. Martí, “High speed silicon electro-optical modulators enhanced via slow light propagation,” Opt. Express19(21), 20876–20885 (2011).
[CrossRef] [PubMed]

S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Takahashi, N. Hirayama, H. Takahashi, Y. Noguchi, H. Okayama, T. Horikawa, and T. Usuki, “12.5-Gb/s operation with 0.29-V·cm VπL using silicon Mach-Zehnder modulator based-on forward-biased pin diode,” Opt. Express20(3), 2911–2923 (2012).
[CrossRef] [PubMed]

Proc. IEEE

D. A. B. Miller, “Device requirements for optical interconnects to silicon chips,” Proc. IEEE97(7), 1166–1185 (2009).
[CrossRef]

Proc. SPIE

L. C. Kimerling, D. Ahn, A. B. Apsel, M. Beals, D. Carothers, Y.-K. Chen, T. Conway, D. M. Gill, M. Grove, C.-Y. Hong, M. Lipson, J. Liu, J. Michel, D. Pan, S. S. Patel, A. T. Pomerene, M. Rasras, D. K. Sparacin, K.-Y. Tu, A. E. White, and C. W. Wong, “Electronic-photonic integrated circuits on the CMOS platform,” Proc. SPIE6125(612502), 612502, 612502-10 (2006).
[CrossRef]

Other

Y. Urino, T. Shimizu, M. Okano, N. Hatori, M. Ishizaka, T. Yamamoto, T. Baba, T. Akagawa, S. Akiyama, T. Usuki, D. Okamoto, M. Miura, M. Noguchi, J. Fujikata, D. Shimura, H. Okayama, T. Tsuchizawa, T. Watanabe, K. Yamada, S. Itabashi, E. Saito, T. Nakamura, and Y. Arakawa, “First demonstration of high density optical interconnects integrated with lasers, optical modulators and photodetectors on a single silicon substrate,” in 37th European Conference and Exposition on Optical Communications, OSA Technical Digest (CD) (Optical Society of America, 2011), paper We.9.LeSaleve.4.

S. Akiyama, T. Baba, M. Imai, T. Akagawa, M. Noguchi, E. Saito, Y. Noguchi, N. Hirayama, T. Horikawa, and T. Usuki, “50-Gb/s silicon modulator using 250-μm-long phase shifter based-on forward-biased pin diodes,” Proc. IEEE Conf. on Group IV Photonics, Paper ThC2 (2012).

S. Manipatruni, Q. Xu, B. Schmidt, J. Shakya, and M. Lipson, “High speed carrier injection 18 Gb/s silicon micro-ring electro-optic modulator,” in Proceedings of LEOS2007 (IEEE 2007), 537–538.
[CrossRef]

J. C. Rosenberg, W. M. Green, S. Assefa, T. Barwicz, M. Yang, S. M. Shank, and Y. A. Vlasov, “Low-power 30 Gbps silicon microring modulator,” in Proceedings of Conference on Lasers and Electro-Optics / Quantum Electronics and Laser Science Conference, OSA Technical Digest (CD) (Optical Society of America, 2011), paper PDPB9.

H. C. Nguyen, S. Hashimoto, M. Shinkawa, and T. Baba, “Sub-100 μm, 40 Gb/s photonic crystal silicon optical modulators,” Proc. IEEE Conf. on Group IV Photonics, Paper PD3 (2012).

G. Li, X. Zheng, H. Thacker, J. Yao, Y. Luo, I. Shubin, K. Raj, J. E. Cunningham, and A. V. Krishnamoorthy, “40 Gb/s thermally tunable CMOS ring resonator,” Proc. IEEE Conf. on Group IV Photonics, Paper PD4 (2012).

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (6)

Fig. 1
Fig. 1

(a) Top view and (b) schematic of our silicon modulator, which corresponds to dotted box in (a). (c) SEM image of fabricated phase shifter based on side-wall-grating waveguide before being covered with oxide cladding layers.

Fig. 2
Fig. 2

, Transmission spectra for various forward-bias voltages from 0 to 1.2 V. Inset shows FSR of resonator with value of 8.46 nm.

Fig. 3
Fig. 3

, Measured optical frequency responses for various wavelengths of input light and transmission spectra of modulator. (a) Optical frequency responses and (b) transmission spectrum at forward bias condition of 0.92 V. Input wavelengths are indicated using same color plotting between (a) and (b). (c) Optical frequency responses and (d) transmission spectrum at reverse bias condition of −3 V. Input wavelengths are indicated using same manner in Fig. 3(a) and 3(b).

Fig. 4
Fig. 4

(a) Setup of large-signal modulation experiment (b) 50-Gb/s pre-emphasis electrical driving signal.

Fig. 5
Fig. 5

Response curve of the FIR digital filter.

Fig. 6
Fig. 6

(a) 50-Gb/s optical eye diagram with driving voltage of 1.96 Vpp. The dynamic extinction ratio (ER) was 4.58 dB. Insertion loss (IL) was 5.2 dB (b) 44-Gb/s optical eye diagram with driving voltage of 1.87 Vpp. ER and IL were 4.8 dB and 5.3 dB respectively. ER means the ratio between the 0-level optical signal (P0) and 1-level optical signal (P1), which can be described as ER = 10 log10(P1/ P0). We used levels indicated in the graphs as “0 Level” and “1 Level” for P0 and P1, respectively. To determine the IL, we measured the optical output power (Iref) as a reference at the nonresonant wavelength when the diodes were kept only DC-bias without high-frequency voltage. Next, we measured the average optical-output power (Imod) from the modulator during 50-Gb/s operation. By using these two values, IL was determined as IL = 10 log10(Imod / Iref)

Metrics