Abstract

We describe the fabrication of corrugated inorganic oxide surface via direct single step conformal nanoimprinting to achieve enhanced light extraction in light emitting diodes (LEDs). Nanoscale zinc oxide (ZnO) and indium tin oxide (ITO) corrugated layer were created on a nonplanar GaN LED surface including metal electrode using ultraviolet (UV) assisted conformal nanoimprinting and subsequent inductively coupled plasma reactive ion etching (ICP-RIE) treatment. The total output powers of the surface corrugated LEDs increased by 45.6% for the patterned sapphire substrate LED and 41.9% for the flat c-plane substrate LED without any degradation of the electrical characteristics. The role of the nanoscale corrugations on the light extraction efficiency enhancement was examined using 3-dimensional finite-difference time-domain (FDTD) analysis. It was found that light scattering by subwavelength scale surface corrugation plays important role to redirect the trapped light into radiative modes. This straightforward inorganic oxide imprint method with inherent flexibility provides an efficient way to generate nanoscale surface textures for the production of high power LEDs and optoelectronic devices.

© 2012 OSA

PDF Article

References

  • View by:
  • |
  • |
  • |

  1. E. Schubert and J. Kim, “Solid-state light sources getting smart,” Science308,1274–1278 (2005).
    [CrossRef] [PubMed]
  2. S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics3, 180–182 (2009).
    [CrossRef]
  3. D. Xiao, K. W. Kim, S. M. Bedair, and J. M. Zavada, “Design of white light-emitting diodes using InGaN/AlInGaN quantum-well structures,” Appl. Phys. Lett.84, 672–674 (2004).
    [CrossRef]
  4. S.-M. Kim, K. S. Kim, G. Y. Jung, J. H. Baek, H. Jeong, and M. S. Jeong, “Electroluminescence comparison of photonic crystal light-emitting diodes with random and periodic hole structure,” J. Phys. D Appl. Phys.42, 152004 (2009).
    [CrossRef]
  5. M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett.75, 2365–2367 (1999).
    [CrossRef]
  6. I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, “30% external quantum efficiency from surface textured, thinfilm light emitting diodes,” Appl. Phys. Lett.63, 2174–2176 (1993).
    [CrossRef]
  7. K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys.40, L583–L585 (2001).
    [CrossRef]
  8. H. K. Cho, J. Jang, J.- H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K.-D. Lee, S. H. Kim, K. Lee, S.-K. Kim, and Y.-H. Lee, “Light extraction enhancement from nanoimprinted photonic crystal GaN-based blue light emitting diodes,” Opt. Express14, 8654–8660 (2006).
  9. Z.-Y. Kim, M.-K. Kwon, K.-W. Lee, S.-J. Park, S. H. Kim, and K.-D. Lee, “Enhanced light extraction from GaN-based green light-emitting diode with photonic crystal,” Appl. Phys. Lett.91, 181109 (2007).
    [CrossRef]
  10. K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3, 601–605 (2004).
    [CrossRef] [PubMed]
  11. S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, H. L. Gao, F. T. Si, S. S. Sun, and Y. Tao, “Localized surface plasmon-enhanced electroluminescence from ZnO based heterojunction light-emitting diodes,” Appl. Phys. Lett.99, 181116 (2011).
    [CrossRef]
  12. S. X. Zhang, B. Zhang, J. Xu, K. Xu, Z. J. Yang, Z. X. Qin, T. J. Yu, and D. P. Yu, “Effects of symmetry of GaN-based two-dimensional photonic crystal with quasicrystal lattices on enhancement of surface light extraction,” Appl. Phys. Lett.88, 171103 (2006).
    [CrossRef]
  13. L. Chen and A. V. Nurmikko, “Fabrication and performance of efficient blue light emitting III-nitride photonic crystals,” Appl. Phys. Lett.85, 3663–3665 (2004).
    [CrossRef]
  14. S. Y. Chou, P. R. Krauss, and P. J. Renstrom, “Imprint lithography with 25-nanometer resolution,” Science272, 85–87 (1996).
    [CrossRef]
  15. E. A. Costner, M. W. Lin, W.-L. Jen, and C. G. Willson, “Nanoimprint lithography materials development for semiconductor device fabrication,” Annu. Rev. Mater. Res.39, 155–180 (2009).
    [CrossRef]
  16. G.-Y. Jung, E. Johnston-Halperin, W. Wu, Z. Yu, S.-Y. Wang, W. M. Tong, Z. Li, J. E. Green, B. A. Sheriff, A. Boukai, Y. Bunimovich, J. R. Heath, and R. S. Williams, “Circuit fabrication at 17 nm half-pitch by nanoimprint lithography,” Nano Lett.6, 351–354 (2006).
    [CrossRef] [PubMed]
  17. D.-H. Kim, C.-O. Cho, Y.-G. Roh, H. Jeon, Y. S. Park, J. Cho, J. S. Im, C. Sone, Y. Park, W. J. Choi, and Q.-H. Park, “Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns,” Appl. Phys. Lett.87, 203508 (2005).
    [CrossRef]
  18. K.-J. Byeon, E.-J. Hong, H. Park, J.-Y. Cho, S.-H. Lee, J. Jhin, J. H. Baek, and H. Lee, “Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes,” Thin Solid Films519, 2241–2246 (2011).
    [CrossRef]
  19. K.-J. Byeon, J. Y. Cho, J. Kim, H. Park, and H. Lee, “Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography,” Opt. Express20, 11423–11432 (2012).
    [CrossRef] [PubMed]
  20. J.-Y. Kim, M.-K. Kwon, S.-J. Park, S. H. Kim, and K.-D. Lee, “Enhancement of light extraction from GaN-based green light-emitting diodes using selective area photonic crystal,” Appl. Phys. Lett.96, 251103 (2010).
    [CrossRef]
  21. J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett.90, 203515 (2007).
    [CrossRef]
  22. H.-H. Park, D.-G. Choi, X. Zhang, S. Jeon, S.-J. Park, S.-W. Lee, S. Kim, K. D. Kim, J.-H. Choi, J. Lee, D. K. Yun, K. J. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Photo-induced hybrid nanopatterning of titanium dioxide via direct imprint lithography,” J. Mater. Chem.20, 1921–1926 (2010).
    [CrossRef]
  23. H.-H. Park, X. Zhang, S.-W. Lee, K.-D. Kim, D.-G. Choi, J.-H. Choi, J. Lee, E.-S. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Facile nanopatterning of zirconium dioxide films via direct ultraviolet-assisted nanoimprint lithography,” J. Mater. Chem.21, 657–662 (2010).
    [CrossRef]
  24. J. Choi and M. Terazima, “Photochemical reaction of 2-nitrobenzaldehyde by monitoring the diffusion coefficient,” J. Phys. Chem. B107(35), 9552–9557 (2003).
    [CrossRef]
  25. A. Diaspro, F. Federici, C. Viappiani, S. Krol, M. Pisciotta, G. Chirico, F. Cannone, and A. Gliozzi, “Two-photon photolysis of 2-nitrobenzaldehyde monitored by fluorescent-labeled nanocapsules,” J. Phys. Chem. B107, 11008–11012 (2003).
    [CrossRef]
  26. E. A. Meulenkamp, “Size dependence of the dissolution of ZnO nanoparticles,” J. Phys. Chem. B102, 7764–7769 (1998).
    [CrossRef]
  27. D. H. Long, I.-K. Hwang, and S.-W. Ryu, “Design optimization of photonic crystal structure for improved light extraction of GaN LED,” IEEE J. Quantum Electron.15, 1257–1263 (2009).
    [CrossRef]
  28. R. Han-Youl, “Modification of the light extraction efficiency in micro-cavity vertical InGaN light-emitting diode structures,” J. Korean Phys. Soc.55, 1267–1271 (2009).
    [CrossRef]
  29. M. Nieto-Vesperinas and J. A. Sánchez-Gil, “Light scattering from a random rough interface with total internal reflection,” J. Opt. Soc. Am. A9, 424–436 (1992).
    [CrossRef]

2012 (1)

2011 (2)

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, H. L. Gao, F. T. Si, S. S. Sun, and Y. Tao, “Localized surface plasmon-enhanced electroluminescence from ZnO based heterojunction light-emitting diodes,” Appl. Phys. Lett.99, 181116 (2011).
[CrossRef]

K.-J. Byeon, E.-J. Hong, H. Park, J.-Y. Cho, S.-H. Lee, J. Jhin, J. H. Baek, and H. Lee, “Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes,” Thin Solid Films519, 2241–2246 (2011).
[CrossRef]

2010 (3)

J.-Y. Kim, M.-K. Kwon, S.-J. Park, S. H. Kim, and K.-D. Lee, “Enhancement of light extraction from GaN-based green light-emitting diodes using selective area photonic crystal,” Appl. Phys. Lett.96, 251103 (2010).
[CrossRef]

H.-H. Park, D.-G. Choi, X. Zhang, S. Jeon, S.-J. Park, S.-W. Lee, S. Kim, K. D. Kim, J.-H. Choi, J. Lee, D. K. Yun, K. J. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Photo-induced hybrid nanopatterning of titanium dioxide via direct imprint lithography,” J. Mater. Chem.20, 1921–1926 (2010).
[CrossRef]

H.-H. Park, X. Zhang, S.-W. Lee, K.-D. Kim, D.-G. Choi, J.-H. Choi, J. Lee, E.-S. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Facile nanopatterning of zirconium dioxide films via direct ultraviolet-assisted nanoimprint lithography,” J. Mater. Chem.21, 657–662 (2010).
[CrossRef]

2009 (5)

D. H. Long, I.-K. Hwang, and S.-W. Ryu, “Design optimization of photonic crystal structure for improved light extraction of GaN LED,” IEEE J. Quantum Electron.15, 1257–1263 (2009).
[CrossRef]

R. Han-Youl, “Modification of the light extraction efficiency in micro-cavity vertical InGaN light-emitting diode structures,” J. Korean Phys. Soc.55, 1267–1271 (2009).
[CrossRef]

E. A. Costner, M. W. Lin, W.-L. Jen, and C. G. Willson, “Nanoimprint lithography materials development for semiconductor device fabrication,” Annu. Rev. Mater. Res.39, 155–180 (2009).
[CrossRef]

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics3, 180–182 (2009).
[CrossRef]

S.-M. Kim, K. S. Kim, G. Y. Jung, J. H. Baek, H. Jeong, and M. S. Jeong, “Electroluminescence comparison of photonic crystal light-emitting diodes with random and periodic hole structure,” J. Phys. D Appl. Phys.42, 152004 (2009).
[CrossRef]

2007 (2)

Z.-Y. Kim, M.-K. Kwon, K.-W. Lee, S.-J. Park, S. H. Kim, and K.-D. Lee, “Enhanced light extraction from GaN-based green light-emitting diode with photonic crystal,” Appl. Phys. Lett.91, 181109 (2007).
[CrossRef]

J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett.90, 203515 (2007).
[CrossRef]

2006 (3)

G.-Y. Jung, E. Johnston-Halperin, W. Wu, Z. Yu, S.-Y. Wang, W. M. Tong, Z. Li, J. E. Green, B. A. Sheriff, A. Boukai, Y. Bunimovich, J. R. Heath, and R. S. Williams, “Circuit fabrication at 17 nm half-pitch by nanoimprint lithography,” Nano Lett.6, 351–354 (2006).
[CrossRef] [PubMed]

S. X. Zhang, B. Zhang, J. Xu, K. Xu, Z. J. Yang, Z. X. Qin, T. J. Yu, and D. P. Yu, “Effects of symmetry of GaN-based two-dimensional photonic crystal with quasicrystal lattices on enhancement of surface light extraction,” Appl. Phys. Lett.88, 171103 (2006).
[CrossRef]

H. K. Cho, J. Jang, J.- H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K.-D. Lee, S. H. Kim, K. Lee, S.-K. Kim, and Y.-H. Lee, “Light extraction enhancement from nanoimprinted photonic crystal GaN-based blue light emitting diodes,” Opt. Express14, 8654–8660 (2006).

2005 (2)

D.-H. Kim, C.-O. Cho, Y.-G. Roh, H. Jeon, Y. S. Park, J. Cho, J. S. Im, C. Sone, Y. Park, W. J. Choi, and Q.-H. Park, “Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns,” Appl. Phys. Lett.87, 203508 (2005).
[CrossRef]

E. Schubert and J. Kim, “Solid-state light sources getting smart,” Science308,1274–1278 (2005).
[CrossRef] [PubMed]

2004 (3)

K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3, 601–605 (2004).
[CrossRef] [PubMed]

D. Xiao, K. W. Kim, S. M. Bedair, and J. M. Zavada, “Design of white light-emitting diodes using InGaN/AlInGaN quantum-well structures,” Appl. Phys. Lett.84, 672–674 (2004).
[CrossRef]

L. Chen and A. V. Nurmikko, “Fabrication and performance of efficient blue light emitting III-nitride photonic crystals,” Appl. Phys. Lett.85, 3663–3665 (2004).
[CrossRef]

2003 (2)

J. Choi and M. Terazima, “Photochemical reaction of 2-nitrobenzaldehyde by monitoring the diffusion coefficient,” J. Phys. Chem. B107(35), 9552–9557 (2003).
[CrossRef]

A. Diaspro, F. Federici, C. Viappiani, S. Krol, M. Pisciotta, G. Chirico, F. Cannone, and A. Gliozzi, “Two-photon photolysis of 2-nitrobenzaldehyde monitored by fluorescent-labeled nanocapsules,” J. Phys. Chem. B107, 11008–11012 (2003).
[CrossRef]

2001 (1)

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys.40, L583–L585 (2001).
[CrossRef]

1999 (1)

M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett.75, 2365–2367 (1999).
[CrossRef]

1998 (1)

E. A. Meulenkamp, “Size dependence of the dissolution of ZnO nanoparticles,” J. Phys. Chem. B102, 7764–7769 (1998).
[CrossRef]

1996 (1)

S. Y. Chou, P. R. Krauss, and P. J. Renstrom, “Imprint lithography with 25-nanometer resolution,” Science272, 85–87 (1996).
[CrossRef]

1993 (1)

I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, “30% external quantum efficiency from surface textured, thinfilm light emitting diodes,” Appl. Phys. Lett.63, 2174–2176 (1993).
[CrossRef]

1992 (1)

Baek, J. H.

K.-J. Byeon, E.-J. Hong, H. Park, J.-Y. Cho, S.-H. Lee, J. Jhin, J. H. Baek, and H. Lee, “Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes,” Thin Solid Films519, 2241–2246 (2011).
[CrossRef]

S.-M. Kim, K. S. Kim, G. Y. Jung, J. H. Baek, H. Jeong, and M. S. Jeong, “Electroluminescence comparison of photonic crystal light-emitting diodes with random and periodic hole structure,” J. Phys. D Appl. Phys.42, 152004 (2009).
[CrossRef]

Bedair, S. M.

D. Xiao, K. W. Kim, S. M. Bedair, and J. M. Zavada, “Design of white light-emitting diodes using InGaN/AlInGaN quantum-well structures,” Appl. Phys. Lett.84, 672–674 (2004).
[CrossRef]

Boukai, A.

G.-Y. Jung, E. Johnston-Halperin, W. Wu, Z. Yu, S.-Y. Wang, W. M. Tong, Z. Li, J. E. Green, B. A. Sheriff, A. Boukai, Y. Bunimovich, J. R. Heath, and R. S. Williams, “Circuit fabrication at 17 nm half-pitch by nanoimprint lithography,” Nano Lett.6, 351–354 (2006).
[CrossRef] [PubMed]

Bunimovich, Y.

G.-Y. Jung, E. Johnston-Halperin, W. Wu, Z. Yu, S.-Y. Wang, W. M. Tong, Z. Li, J. E. Green, B. A. Sheriff, A. Boukai, Y. Bunimovich, J. R. Heath, and R. S. Williams, “Circuit fabrication at 17 nm half-pitch by nanoimprint lithography,” Nano Lett.6, 351–354 (2006).
[CrossRef] [PubMed]

Byeon, K.-J.

K.-J. Byeon, J. Y. Cho, J. Kim, H. Park, and H. Lee, “Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography,” Opt. Express20, 11423–11432 (2012).
[CrossRef] [PubMed]

K.-J. Byeon, E.-J. Hong, H. Park, J.-Y. Cho, S.-H. Lee, J. Jhin, J. H. Baek, and H. Lee, “Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes,” Thin Solid Films519, 2241–2246 (2011).
[CrossRef]

Caneau, C.

I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, “30% external quantum efficiency from surface textured, thinfilm light emitting diodes,” Appl. Phys. Lett.63, 2174–2176 (1993).
[CrossRef]

Cannone, F.

A. Diaspro, F. Federici, C. Viappiani, S. Krol, M. Pisciotta, G. Chirico, F. Cannone, and A. Gliozzi, “Two-photon photolysis of 2-nitrobenzaldehyde monitored by fluorescent-labeled nanocapsules,” J. Phys. Chem. B107, 11008–11012 (2003).
[CrossRef]

Carter-Coman, C.

M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett.75, 2365–2367 (1999).
[CrossRef]

Chen, E. I.

M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett.75, 2365–2367 (1999).
[CrossRef]

Chen, H.

J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett.90, 203515 (2007).
[CrossRef]

Chen, L.

L. Chen and A. V. Nurmikko, “Fabrication and performance of efficient blue light emitting III-nitride photonic crystals,” Appl. Phys. Lett.85, 3663–3665 (2004).
[CrossRef]

Chirico, G.

A. Diaspro, F. Federici, C. Viappiani, S. Krol, M. Pisciotta, G. Chirico, F. Cannone, and A. Gliozzi, “Two-photon photolysis of 2-nitrobenzaldehyde monitored by fluorescent-labeled nanocapsules,” J. Phys. Chem. B107, 11008–11012 (2003).
[CrossRef]

Cho, C.-O.

D.-H. Kim, C.-O. Cho, Y.-G. Roh, H. Jeon, Y. S. Park, J. Cho, J. S. Im, C. Sone, Y. Park, W. J. Choi, and Q.-H. Park, “Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns,” Appl. Phys. Lett.87, 203508 (2005).
[CrossRef]

Cho, H. K.

Cho, J.

D.-H. Kim, C.-O. Cho, Y.-G. Roh, H. Jeon, Y. S. Park, J. Cho, J. S. Im, C. Sone, Y. Park, W. J. Choi, and Q.-H. Park, “Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns,” Appl. Phys. Lett.87, 203508 (2005).
[CrossRef]

Cho, J. Y.

Cho, J.-Y.

K.-J. Byeon, E.-J. Hong, H. Park, J.-Y. Cho, S.-H. Lee, J. Jhin, J. H. Baek, and H. Lee, “Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes,” Thin Solid Films519, 2241–2246 (2011).
[CrossRef]

Choe, Y. H.

Choi, C. K.

J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett.90, 203515 (2007).
[CrossRef]

Choi, D.-G.

H.-H. Park, D.-G. Choi, X. Zhang, S. Jeon, S.-J. Park, S.-W. Lee, S. Kim, K. D. Kim, J.-H. Choi, J. Lee, D. K. Yun, K. J. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Photo-induced hybrid nanopatterning of titanium dioxide via direct imprint lithography,” J. Mater. Chem.20, 1921–1926 (2010).
[CrossRef]

H.-H. Park, X. Zhang, S.-W. Lee, K.-D. Kim, D.-G. Choi, J.-H. Choi, J. Lee, E.-S. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Facile nanopatterning of zirconium dioxide films via direct ultraviolet-assisted nanoimprint lithography,” J. Mater. Chem.21, 657–662 (2010).
[CrossRef]

Choi, J.

Choi, J.- H.

Choi, J.-H.

H.-H. Park, X. Zhang, S.-W. Lee, K.-D. Kim, D.-G. Choi, J.-H. Choi, J. Lee, E.-S. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Facile nanopatterning of zirconium dioxide films via direct ultraviolet-assisted nanoimprint lithography,” J. Mater. Chem.21, 657–662 (2010).
[CrossRef]

H.-H. Park, D.-G. Choi, X. Zhang, S. Jeon, S.-J. Park, S.-W. Lee, S. Kim, K. D. Kim, J.-H. Choi, J. Lee, D. K. Yun, K. J. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Photo-induced hybrid nanopatterning of titanium dioxide via direct imprint lithography,” J. Mater. Chem.20, 1921–1926 (2010).
[CrossRef]

Choi, W. J.

D.-H. Kim, C.-O. Cho, Y.-G. Roh, H. Jeon, Y. S. Park, J. Cho, J. S. Im, C. Sone, Y. Park, W. J. Choi, and Q.-H. Park, “Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns,” Appl. Phys. Lett.87, 203508 (2005).
[CrossRef]

Chou, S. Y.

S. Y. Chou, P. R. Krauss, and P. J. Renstrom, “Imprint lithography with 25-nanometer resolution,” Science272, 85–87 (1996).
[CrossRef]

Chui, H. C.

M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett.75, 2365–2367 (1999).
[CrossRef]

Collins, D.

M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett.75, 2365–2367 (1999).
[CrossRef]

Costner, E. A.

E. A. Costner, M. W. Lin, W.-L. Jen, and C. G. Willson, “Nanoimprint lithography materials development for semiconductor device fabrication,” Annu. Rev. Mater. Res.39, 155–180 (2009).
[CrossRef]

Craford, M. G.

M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett.75, 2365–2367 (1999).
[CrossRef]

DenBaars, S. P.

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics3, 180–182 (2009).
[CrossRef]

Diaspro, A.

A. Diaspro, F. Federici, C. Viappiani, S. Krol, M. Pisciotta, G. Chirico, F. Cannone, and A. Gliozzi, “Two-photon photolysis of 2-nitrobenzaldehyde monitored by fluorescent-labeled nanocapsules,” J. Phys. Chem. B107, 11008–11012 (2003).
[CrossRef]

Dong, J. J.

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, H. L. Gao, F. T. Si, S. S. Sun, and Y. Tao, “Localized surface plasmon-enhanced electroluminescence from ZnO based heterojunction light-emitting diodes,” Appl. Phys. Lett.99, 181116 (2011).
[CrossRef]

Federici, F.

A. Diaspro, F. Federici, C. Viappiani, S. Krol, M. Pisciotta, G. Chirico, F. Cannone, and A. Gliozzi, “Two-photon photolysis of 2-nitrobenzaldehyde monitored by fluorescent-labeled nanocapsules,” J. Phys. Chem. B107, 11008–11012 (2003).
[CrossRef]

Gao, H. L.

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, H. L. Gao, F. T. Si, S. S. Sun, and Y. Tao, “Localized surface plasmon-enhanced electroluminescence from ZnO based heterojunction light-emitting diodes,” Appl. Phys. Lett.99, 181116 (2011).
[CrossRef]

Gardner, N. F.

M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett.75, 2365–2367 (1999).
[CrossRef]

Gliozzi, A.

A. Diaspro, F. Federici, C. Viappiani, S. Krol, M. Pisciotta, G. Chirico, F. Cannone, and A. Gliozzi, “Two-photon photolysis of 2-nitrobenzaldehyde monitored by fluorescent-labeled nanocapsules,” J. Phys. Chem. B107, 11008–11012 (2003).
[CrossRef]

Gmitter, T. J.

I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, “30% external quantum efficiency from surface textured, thinfilm light emitting diodes,” Appl. Phys. Lett.63, 2174–2176 (1993).
[CrossRef]

Green, J. E.

G.-Y. Jung, E. Johnston-Halperin, W. Wu, Z. Yu, S.-Y. Wang, W. M. Tong, Z. Li, J. E. Green, B. A. Sheriff, A. Boukai, Y. Bunimovich, J. R. Heath, and R. S. Williams, “Circuit fabrication at 17 nm half-pitch by nanoimprint lithography,” Nano Lett.6, 351–354 (2006).
[CrossRef] [PubMed]

Grillot, P.

M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett.75, 2365–2367 (1999).
[CrossRef]

Han-Youl, R.

R. Han-Youl, “Modification of the light extraction efficiency in micro-cavity vertical InGaN light-emitting diode structures,” J. Korean Phys. Soc.55, 1267–1271 (2009).
[CrossRef]

Heath, J. R.

G.-Y. Jung, E. Johnston-Halperin, W. Wu, Z. Yu, S.-Y. Wang, W. M. Tong, Z. Li, J. E. Green, B. A. Sheriff, A. Boukai, Y. Bunimovich, J. R. Heath, and R. S. Williams, “Circuit fabrication at 17 nm half-pitch by nanoimprint lithography,” Nano Lett.6, 351–354 (2006).
[CrossRef] [PubMed]

Hill, R. H.

H.-H. Park, D.-G. Choi, X. Zhang, S. Jeon, S.-J. Park, S.-W. Lee, S. Kim, K. D. Kim, J.-H. Choi, J. Lee, D. K. Yun, K. J. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Photo-induced hybrid nanopatterning of titanium dioxide via direct imprint lithography,” J. Mater. Chem.20, 1921–1926 (2010).
[CrossRef]

H.-H. Park, X. Zhang, S.-W. Lee, K.-D. Kim, D.-G. Choi, J.-H. Choi, J. Lee, E.-S. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Facile nanopatterning of zirconium dioxide films via direct ultraviolet-assisted nanoimprint lithography,” J. Mater. Chem.21, 657–662 (2010).
[CrossRef]

Höfler, G. E.

M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett.75, 2365–2367 (1999).
[CrossRef]

Hong, E.-J.

K.-J. Byeon, E.-J. Hong, H. Park, J.-Y. Cho, S.-H. Lee, J. Jhin, J. H. Baek, and H. Lee, “Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes,” Thin Solid Films519, 2241–2246 (2011).
[CrossRef]

Huang, J.-W.

M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett.75, 2365–2367 (1999).
[CrossRef]

Hueschen, M.

M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett.75, 2365–2367 (1999).
[CrossRef]

Hwang, I.-K.

D. H. Long, I.-K. Hwang, and S.-W. Ryu, “Design optimization of photonic crystal structure for improved light extraction of GaN LED,” IEEE J. Quantum Electron.15, 1257–1263 (2009).
[CrossRef]

Im, J. S.

D.-H. Kim, C.-O. Cho, Y.-G. Roh, H. Jeon, Y. S. Park, J. Cho, J. S. Im, C. Sone, Y. Park, W. J. Choi, and Q.-H. Park, “Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns,” Appl. Phys. Lett.87, 203508 (2005).
[CrossRef]

Imada, Y.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys.40, L583–L585 (2001).
[CrossRef]

Jang, J.

Jen, W.-L.

E. A. Costner, M. W. Lin, W.-L. Jen, and C. G. Willson, “Nanoimprint lithography materials development for semiconductor device fabrication,” Annu. Rev. Mater. Res.39, 155–180 (2009).
[CrossRef]

Jeon, H.

D.-H. Kim, C.-O. Cho, Y.-G. Roh, H. Jeon, Y. S. Park, J. Cho, J. S. Im, C. Sone, Y. Park, W. J. Choi, and Q.-H. Park, “Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns,” Appl. Phys. Lett.87, 203508 (2005).
[CrossRef]

Jeon, S.

H.-H. Park, D.-G. Choi, X. Zhang, S. Jeon, S.-J. Park, S.-W. Lee, S. Kim, K. D. Kim, J.-H. Choi, J. Lee, D. K. Yun, K. J. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Photo-induced hybrid nanopatterning of titanium dioxide via direct imprint lithography,” J. Mater. Chem.20, 1921–1926 (2010).
[CrossRef]

Jeong, H.

S.-M. Kim, K. S. Kim, G. Y. Jung, J. H. Baek, H. Jeong, and M. S. Jeong, “Electroluminescence comparison of photonic crystal light-emitting diodes with random and periodic hole structure,” J. Phys. D Appl. Phys.42, 152004 (2009).
[CrossRef]

Jeong, J.-H.

H.-H. Park, D.-G. Choi, X. Zhang, S. Jeon, S.-J. Park, S.-W. Lee, S. Kim, K. D. Kim, J.-H. Choi, J. Lee, D. K. Yun, K. J. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Photo-induced hybrid nanopatterning of titanium dioxide via direct imprint lithography,” J. Mater. Chem.20, 1921–1926 (2010).
[CrossRef]

H.-H. Park, X. Zhang, S.-W. Lee, K.-D. Kim, D.-G. Choi, J.-H. Choi, J. Lee, E.-S. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Facile nanopatterning of zirconium dioxide films via direct ultraviolet-assisted nanoimprint lithography,” J. Mater. Chem.21, 657–662 (2010).
[CrossRef]

Jeong, M. S.

S.-M. Kim, K. S. Kim, G. Y. Jung, J. H. Baek, H. Jeong, and M. S. Jeong, “Electroluminescence comparison of photonic crystal light-emitting diodes with random and periodic hole structure,” J. Phys. D Appl. Phys.42, 152004 (2009).
[CrossRef]

Jhin, J.

K.-J. Byeon, E.-J. Hong, H. Park, J.-Y. Cho, S.-H. Lee, J. Jhin, J. H. Baek, and H. Lee, “Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes,” Thin Solid Films519, 2241–2246 (2011).
[CrossRef]

Johnston-Halperin, E.

G.-Y. Jung, E. Johnston-Halperin, W. Wu, Z. Yu, S.-Y. Wang, W. M. Tong, Z. Li, J. E. Green, B. A. Sheriff, A. Boukai, Y. Bunimovich, J. R. Heath, and R. S. Williams, “Circuit fabrication at 17 nm half-pitch by nanoimprint lithography,” Nano Lett.6, 351–354 (2006).
[CrossRef] [PubMed]

Jung, G. Y.

S.-M. Kim, K. S. Kim, G. Y. Jung, J. H. Baek, H. Jeong, and M. S. Jeong, “Electroluminescence comparison of photonic crystal light-emitting diodes with random and periodic hole structure,” J. Phys. D Appl. Phys.42, 152004 (2009).
[CrossRef]

Jung, G.-Y.

G.-Y. Jung, E. Johnston-Halperin, W. Wu, Z. Yu, S.-Y. Wang, W. M. Tong, Z. Li, J. E. Green, B. A. Sheriff, A. Boukai, Y. Bunimovich, J. R. Heath, and R. S. Williams, “Circuit fabrication at 17 nm half-pitch by nanoimprint lithography,” Nano Lett.6, 351–354 (2006).
[CrossRef] [PubMed]

Kato, M.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys.40, L583–L585 (2001).
[CrossRef]

Kim, D.-H.

D.-H. Kim, C.-O. Cho, Y.-G. Roh, H. Jeon, Y. S. Park, J. Cho, J. S. Im, C. Sone, Y. Park, W. J. Choi, and Q.-H. Park, “Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns,” Appl. Phys. Lett.87, 203508 (2005).
[CrossRef]

Kim, J.

Kim, J.

E. Schubert and J. Kim, “Solid-state light sources getting smart,” Science308,1274–1278 (2005).
[CrossRef] [PubMed]

Kim, J.-Y.

J.-Y. Kim, M.-K. Kwon, S.-J. Park, S. H. Kim, and K.-D. Lee, “Enhancement of light extraction from GaN-based green light-emitting diodes using selective area photonic crystal,” Appl. Phys. Lett.96, 251103 (2010).
[CrossRef]

Kim, K. D.

H.-H. Park, D.-G. Choi, X. Zhang, S. Jeon, S.-J. Park, S.-W. Lee, S. Kim, K. D. Kim, J.-H. Choi, J. Lee, D. K. Yun, K. J. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Photo-induced hybrid nanopatterning of titanium dioxide via direct imprint lithography,” J. Mater. Chem.20, 1921–1926 (2010).
[CrossRef]

Kim, K. S.

S.-M. Kim, K. S. Kim, G. Y. Jung, J. H. Baek, H. Jeong, and M. S. Jeong, “Electroluminescence comparison of photonic crystal light-emitting diodes with random and periodic hole structure,” J. Phys. D Appl. Phys.42, 152004 (2009).
[CrossRef]

Kim, K. W.

D. Xiao, K. W. Kim, S. M. Bedair, and J. M. Zavada, “Design of white light-emitting diodes using InGaN/AlInGaN quantum-well structures,” Appl. Phys. Lett.84, 672–674 (2004).
[CrossRef]

Kim, K.-D.

H.-H. Park, X. Zhang, S.-W. Lee, K.-D. Kim, D.-G. Choi, J.-H. Choi, J. Lee, E.-S. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Facile nanopatterning of zirconium dioxide films via direct ultraviolet-assisted nanoimprint lithography,” J. Mater. Chem.21, 657–662 (2010).
[CrossRef]

Kim, S.

H.-H. Park, D.-G. Choi, X. Zhang, S. Jeon, S.-J. Park, S.-W. Lee, S. Kim, K. D. Kim, J.-H. Choi, J. Lee, D. K. Yun, K. J. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Photo-induced hybrid nanopatterning of titanium dioxide via direct imprint lithography,” J. Mater. Chem.20, 1921–1926 (2010).
[CrossRef]

Kim, S. H.

J.-Y. Kim, M.-K. Kwon, S.-J. Park, S. H. Kim, and K.-D. Lee, “Enhancement of light extraction from GaN-based green light-emitting diodes using selective area photonic crystal,” Appl. Phys. Lett.96, 251103 (2010).
[CrossRef]

Z.-Y. Kim, M.-K. Kwon, K.-W. Lee, S.-J. Park, S. H. Kim, and K.-D. Lee, “Enhanced light extraction from GaN-based green light-emitting diode with photonic crystal,” Appl. Phys. Lett.91, 181109 (2007).
[CrossRef]

H. K. Cho, J. Jang, J.- H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K.-D. Lee, S. H. Kim, K. Lee, S.-K. Kim, and Y.-H. Lee, “Light extraction enhancement from nanoimprinted photonic crystal GaN-based blue light emitting diodes,” Opt. Express14, 8654–8660 (2006).

Kim, S.-K.

Kim, S.-M.

S.-M. Kim, K. S. Kim, G. Y. Jung, J. H. Baek, H. Jeong, and M. S. Jeong, “Electroluminescence comparison of photonic crystal light-emitting diodes with random and periodic hole structure,” J. Phys. D Appl. Phys.42, 152004 (2009).
[CrossRef]

Kim, Z.-Y.

Z.-Y. Kim, M.-K. Kwon, K.-W. Lee, S.-J. Park, S. H. Kim, and K.-D. Lee, “Enhanced light extraction from GaN-based green light-emitting diode with photonic crystal,” Appl. Phys. Lett.91, 181109 (2007).
[CrossRef]

Kish, F. A.

M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett.75, 2365–2367 (1999).
[CrossRef]

Kocot, C. P.

M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett.75, 2365–2367 (1999).
[CrossRef]

Krames, M. R.

M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett.75, 2365–2367 (1999).
[CrossRef]

Krauss, P. R.

S. Y. Chou, P. R. Krauss, and P. J. Renstrom, “Imprint lithography with 25-nanometer resolution,” Science272, 85–87 (1996).
[CrossRef]

Krol, S.

A. Diaspro, F. Federici, C. Viappiani, S. Krol, M. Pisciotta, G. Chirico, F. Cannone, and A. Gliozzi, “Two-photon photolysis of 2-nitrobenzaldehyde monitored by fluorescent-labeled nanocapsules,” J. Phys. Chem. B107, 11008–11012 (2003).
[CrossRef]

Kwon, M.-K.

J.-Y. Kim, M.-K. Kwon, S.-J. Park, S. H. Kim, and K.-D. Lee, “Enhancement of light extraction from GaN-based green light-emitting diodes using selective area photonic crystal,” Appl. Phys. Lett.96, 251103 (2010).
[CrossRef]

Z.-Y. Kim, M.-K. Kwon, K.-W. Lee, S.-J. Park, S. H. Kim, and K.-D. Lee, “Enhanced light extraction from GaN-based green light-emitting diode with photonic crystal,” Appl. Phys. Lett.91, 181109 (2007).
[CrossRef]

Lee, B.

Lee, E.-S.

H.-H. Park, X. Zhang, S.-W. Lee, K.-D. Kim, D.-G. Choi, J.-H. Choi, J. Lee, E.-S. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Facile nanopatterning of zirconium dioxide films via direct ultraviolet-assisted nanoimprint lithography,” J. Mater. Chem.21, 657–662 (2010).
[CrossRef]

Lee, H.

K.-J. Byeon, J. Y. Cho, J. Kim, H. Park, and H. Lee, “Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography,” Opt. Express20, 11423–11432 (2012).
[CrossRef] [PubMed]

K.-J. Byeon, E.-J. Hong, H. Park, J.-Y. Cho, S.-H. Lee, J. Jhin, J. H. Baek, and H. Lee, “Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes,” Thin Solid Films519, 2241–2246 (2011).
[CrossRef]

Lee, J.

H.-H. Park, D.-G. Choi, X. Zhang, S. Jeon, S.-J. Park, S.-W. Lee, S. Kim, K. D. Kim, J.-H. Choi, J. Lee, D. K. Yun, K. J. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Photo-induced hybrid nanopatterning of titanium dioxide via direct imprint lithography,” J. Mater. Chem.20, 1921–1926 (2010).
[CrossRef]

H.-H. Park, X. Zhang, S.-W. Lee, K.-D. Kim, D.-G. Choi, J.-H. Choi, J. Lee, E.-S. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Facile nanopatterning of zirconium dioxide films via direct ultraviolet-assisted nanoimprint lithography,” J. Mater. Chem.21, 657–662 (2010).
[CrossRef]

Lee, J. S.

Lee, K.

Lee, K. J.

H.-H. Park, D.-G. Choi, X. Zhang, S. Jeon, S.-J. Park, S.-W. Lee, S. Kim, K. D. Kim, J.-H. Choi, J. Lee, D. K. Yun, K. J. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Photo-induced hybrid nanopatterning of titanium dioxide via direct imprint lithography,” J. Mater. Chem.20, 1921–1926 (2010).
[CrossRef]

Lee, K.-D.

J.-Y. Kim, M.-K. Kwon, S.-J. Park, S. H. Kim, and K.-D. Lee, “Enhancement of light extraction from GaN-based green light-emitting diodes using selective area photonic crystal,” Appl. Phys. Lett.96, 251103 (2010).
[CrossRef]

Z.-Y. Kim, M.-K. Kwon, K.-W. Lee, S.-J. Park, S. H. Kim, and K.-D. Lee, “Enhanced light extraction from GaN-based green light-emitting diode with photonic crystal,” Appl. Phys. Lett.91, 181109 (2007).
[CrossRef]

H. K. Cho, J. Jang, J.- H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K.-D. Lee, S. H. Kim, K. Lee, S.-K. Kim, and Y.-H. Lee, “Light extraction enhancement from nanoimprinted photonic crystal GaN-based blue light emitting diodes,” Opt. Express14, 8654–8660 (2006).

Lee, K.-W.

Z.-Y. Kim, M.-K. Kwon, K.-W. Lee, S.-J. Park, S. H. Kim, and K.-D. Lee, “Enhanced light extraction from GaN-based green light-emitting diode with photonic crystal,” Appl. Phys. Lett.91, 181109 (2007).
[CrossRef]

Lee, S.-H.

K.-J. Byeon, E.-J. Hong, H. Park, J.-Y. Cho, S.-H. Lee, J. Jhin, J. H. Baek, and H. Lee, “Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes,” Thin Solid Films519, 2241–2246 (2011).
[CrossRef]

Lee, S.-W.

H.-H. Park, D.-G. Choi, X. Zhang, S. Jeon, S.-J. Park, S.-W. Lee, S. Kim, K. D. Kim, J.-H. Choi, J. Lee, D. K. Yun, K. J. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Photo-induced hybrid nanopatterning of titanium dioxide via direct imprint lithography,” J. Mater. Chem.20, 1921–1926 (2010).
[CrossRef]

H.-H. Park, X. Zhang, S.-W. Lee, K.-D. Kim, D.-G. Choi, J.-H. Choi, J. Lee, E.-S. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Facile nanopatterning of zirconium dioxide films via direct ultraviolet-assisted nanoimprint lithography,” J. Mater. Chem.21, 657–662 (2010).
[CrossRef]

Lee, Y.-H.

Li, Z.

G.-Y. Jung, E. Johnston-Halperin, W. Wu, Z. Yu, S.-Y. Wang, W. M. Tong, Z. Li, J. E. Green, B. A. Sheriff, A. Boukai, Y. Bunimovich, J. R. Heath, and R. S. Williams, “Circuit fabrication at 17 nm half-pitch by nanoimprint lithography,” Nano Lett.6, 351–354 (2006).
[CrossRef] [PubMed]

Lin, M. W.

E. A. Costner, M. W. Lin, W.-L. Jen, and C. G. Willson, “Nanoimprint lithography materials development for semiconductor device fabrication,” Annu. Rev. Mater. Res.39, 155–180 (2009).
[CrossRef]

Loh, B.

M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett.75, 2365–2367 (1999).
[CrossRef]

Long, D. H.

D. H. Long, I.-K. Hwang, and S.-W. Ryu, “Design optimization of photonic crystal structure for improved light extraction of GaN LED,” IEEE J. Quantum Electron.15, 1257–1263 (2009).
[CrossRef]

Lu, Y.

J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett.90, 203515 (2007).
[CrossRef]

Mackie, D. M.

J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett.90, 203515 (2007).
[CrossRef]

Meulenkamp, E. A.

E. A. Meulenkamp, “Size dependence of the dissolution of ZnO nanoparticles,” J. Phys. Chem. B102, 7764–7769 (1998).
[CrossRef]

Mukai, T.

K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3, 601–605 (2004).
[CrossRef] [PubMed]

Nakamura, S.

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics3, 180–182 (2009).
[CrossRef]

Narukawa, Y.

K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3, 601–605 (2004).
[CrossRef] [PubMed]

Nieto-Vesperinas, M.

Niki, I.

K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3, 601–605 (2004).
[CrossRef] [PubMed]

Nurmikko, A. V.

L. Chen and A. V. Nurmikko, “Fabrication and performance of efficient blue light emitting III-nitride photonic crystals,” Appl. Phys. Lett.85, 3663–3665 (2004).
[CrossRef]

Ochiai-Holcomb, M.

M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett.75, 2365–2367 (1999).
[CrossRef]

Ohuchi, Y.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys.40, L583–L585 (2001).
[CrossRef]

Okagawa, H.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys.40, L583–L585 (2001).
[CrossRef]

Okamoto, K.

K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3, 601–605 (2004).
[CrossRef] [PubMed]

Park, H.

K.-J. Byeon, J. Y. Cho, J. Kim, H. Park, and H. Lee, “Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography,” Opt. Express20, 11423–11432 (2012).
[CrossRef] [PubMed]

K.-J. Byeon, E.-J. Hong, H. Park, J.-Y. Cho, S.-H. Lee, J. Jhin, J. H. Baek, and H. Lee, “Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes,” Thin Solid Films519, 2241–2246 (2011).
[CrossRef]

Park, H.-H.

H.-H. Park, D.-G. Choi, X. Zhang, S. Jeon, S.-J. Park, S.-W. Lee, S. Kim, K. D. Kim, J.-H. Choi, J. Lee, D. K. Yun, K. J. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Photo-induced hybrid nanopatterning of titanium dioxide via direct imprint lithography,” J. Mater. Chem.20, 1921–1926 (2010).
[CrossRef]

H.-H. Park, D.-G. Choi, X. Zhang, S. Jeon, S.-J. Park, S.-W. Lee, S. Kim, K. D. Kim, J.-H. Choi, J. Lee, D. K. Yun, K. J. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Photo-induced hybrid nanopatterning of titanium dioxide via direct imprint lithography,” J. Mater. Chem.20, 1921–1926 (2010).
[CrossRef]

H.-H. Park, X. Zhang, S.-W. Lee, K.-D. Kim, D.-G. Choi, J.-H. Choi, J. Lee, E.-S. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Facile nanopatterning of zirconium dioxide films via direct ultraviolet-assisted nanoimprint lithography,” J. Mater. Chem.21, 657–662 (2010).
[CrossRef]

H.-H. Park, X. Zhang, S.-W. Lee, K.-D. Kim, D.-G. Choi, J.-H. Choi, J. Lee, E.-S. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Facile nanopatterning of zirconium dioxide films via direct ultraviolet-assisted nanoimprint lithography,” J. Mater. Chem.21, 657–662 (2010).
[CrossRef]

Park, Q.-H.

D.-H. Kim, C.-O. Cho, Y.-G. Roh, H. Jeon, Y. S. Park, J. Cho, J. S. Im, C. Sone, Y. Park, W. J. Choi, and Q.-H. Park, “Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns,” Appl. Phys. Lett.87, 203508 (2005).
[CrossRef]

Park, S.-J.

H.-H. Park, D.-G. Choi, X. Zhang, S. Jeon, S.-J. Park, S.-W. Lee, S. Kim, K. D. Kim, J.-H. Choi, J. Lee, D. K. Yun, K. J. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Photo-induced hybrid nanopatterning of titanium dioxide via direct imprint lithography,” J. Mater. Chem.20, 1921–1926 (2010).
[CrossRef]

J.-Y. Kim, M.-K. Kwon, S.-J. Park, S. H. Kim, and K.-D. Lee, “Enhancement of light extraction from GaN-based green light-emitting diodes using selective area photonic crystal,” Appl. Phys. Lett.96, 251103 (2010).
[CrossRef]

Z.-Y. Kim, M.-K. Kwon, K.-W. Lee, S.-J. Park, S. H. Kim, and K.-D. Lee, “Enhanced light extraction from GaN-based green light-emitting diode with photonic crystal,” Appl. Phys. Lett.91, 181109 (2007).
[CrossRef]

Park, Y.

D.-H. Kim, C.-O. Cho, Y.-G. Roh, H. Jeon, Y. S. Park, J. Cho, J. S. Im, C. Sone, Y. Park, W. J. Choi, and Q.-H. Park, “Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns,” Appl. Phys. Lett.87, 203508 (2005).
[CrossRef]

Park, Y. S.

D.-H. Kim, C.-O. Cho, Y.-G. Roh, H. Jeon, Y. S. Park, J. Cho, J. S. Im, C. Sone, Y. Park, W. J. Choi, and Q.-H. Park, “Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns,” Appl. Phys. Lett.87, 203508 (2005).
[CrossRef]

Pimputkar, S.

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics3, 180–182 (2009).
[CrossRef]

Pisciotta, M.

A. Diaspro, F. Federici, C. Viappiani, S. Krol, M. Pisciotta, G. Chirico, F. Cannone, and A. Gliozzi, “Two-photon photolysis of 2-nitrobenzaldehyde monitored by fluorescent-labeled nanocapsules,” J. Phys. Chem. B107, 11008–11012 (2003).
[CrossRef]

Posselt, J.

M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett.75, 2365–2367 (1999).
[CrossRef]

Qin, Z. X.

S. X. Zhang, B. Zhang, J. Xu, K. Xu, Z. J. Yang, Z. X. Qin, T. J. Yu, and D. P. Yu, “Effects of symmetry of GaN-based two-dimensional photonic crystal with quasicrystal lattices on enhancement of surface light extraction,” Appl. Phys. Lett.88, 171103 (2006).
[CrossRef]

Renstrom, P. J.

S. Y. Chou, P. R. Krauss, and P. J. Renstrom, “Imprint lithography with 25-nanometer resolution,” Science272, 85–87 (1996).
[CrossRef]

Roh, Y.-G.

D.-H. Kim, C.-O. Cho, Y.-G. Roh, H. Jeon, Y. S. Park, J. Cho, J. S. Im, C. Sone, Y. Park, W. J. Choi, and Q.-H. Park, “Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns,” Appl. Phys. Lett.87, 203508 (2005).
[CrossRef]

Ryu, S.-W.

D. H. Long, I.-K. Hwang, and S.-W. Ryu, “Design optimization of photonic crystal structure for improved light extraction of GaN LED,” IEEE J. Quantum Electron.15, 1257–1263 (2009).
[CrossRef]

Sánchez-Gil, J. A.

Saraf, G.

J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett.90, 203515 (2007).
[CrossRef]

Sasser, G.

M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett.75, 2365–2367 (1999).
[CrossRef]

Scherer, A.

K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3, 601–605 (2004).
[CrossRef] [PubMed]

I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, “30% external quantum efficiency from surface textured, thinfilm light emitting diodes,” Appl. Phys. Lett.63, 2174–2176 (1993).
[CrossRef]

Schnitzer, I.

I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, “30% external quantum efficiency from surface textured, thinfilm light emitting diodes,” Appl. Phys. Lett.63, 2174–2176 (1993).
[CrossRef]

Schubert, E.

E. Schubert and J. Kim, “Solid-state light sources getting smart,” Science308,1274–1278 (2005).
[CrossRef] [PubMed]

Shen, H.

J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett.90, 203515 (2007).
[CrossRef]

Sheriff, B. A.

G.-Y. Jung, E. Johnston-Halperin, W. Wu, Z. Yu, S.-Y. Wang, W. M. Tong, Z. Li, J. E. Green, B. A. Sheriff, A. Boukai, Y. Bunimovich, J. R. Heath, and R. S. Williams, “Circuit fabrication at 17 nm half-pitch by nanoimprint lithography,” Nano Lett.6, 351–354 (2006).
[CrossRef] [PubMed]

Shvartser, A.

K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3, 601–605 (2004).
[CrossRef] [PubMed]

Si, F. T.

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, H. L. Gao, F. T. Si, S. S. Sun, and Y. Tao, “Localized surface plasmon-enhanced electroluminescence from ZnO based heterojunction light-emitting diodes,” Appl. Phys. Lett.99, 181116 (2011).
[CrossRef]

Sone, C.

D.-H. Kim, C.-O. Cho, Y.-G. Roh, H. Jeon, Y. S. Park, J. Cho, J. S. Im, C. Sone, Y. Park, W. J. Choi, and Q.-H. Park, “Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns,” Appl. Phys. Lett.87, 203508 (2005).
[CrossRef]

Song, J. J.

J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett.90, 203515 (2007).
[CrossRef]

Speck, J. S.

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics3, 180–182 (2009).
[CrossRef]

Stockman, S. A.

M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett.75, 2365–2367 (1999).
[CrossRef]

Sun, S. S.

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, H. L. Gao, F. T. Si, S. S. Sun, and Y. Tao, “Localized surface plasmon-enhanced electroluminescence from ZnO based heterojunction light-emitting diodes,” Appl. Phys. Lett.99, 181116 (2011).
[CrossRef]

Tadatomo, K.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys.40, L583–L585 (2001).
[CrossRef]

Taguchi, T.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys.40, L583–L585 (2001).
[CrossRef]

Tan, I.-H.

M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett.75, 2365–2367 (1999).
[CrossRef]

Tan, T. S.

M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett.75, 2365–2367 (1999).
[CrossRef]

Tao, Y.

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, H. L. Gao, F. T. Si, S. S. Sun, and Y. Tao, “Localized surface plasmon-enhanced electroluminescence from ZnO based heterojunction light-emitting diodes,” Appl. Phys. Lett.99, 181116 (2011).
[CrossRef]

Terazima, M.

J. Choi and M. Terazima, “Photochemical reaction of 2-nitrobenzaldehyde by monitoring the diffusion coefficient,” J. Phys. Chem. B107(35), 9552–9557 (2003).
[CrossRef]

Tong, W. M.

G.-Y. Jung, E. Johnston-Halperin, W. Wu, Z. Yu, S.-Y. Wang, W. M. Tong, Z. Li, J. E. Green, B. A. Sheriff, A. Boukai, Y. Bunimovich, J. R. Heath, and R. S. Williams, “Circuit fabrication at 17 nm half-pitch by nanoimprint lithography,” Nano Lett.6, 351–354 (2006).
[CrossRef] [PubMed]

Tsunekawa, T.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys.40, L583–L585 (2001).
[CrossRef]

Viappiani, C.

A. Diaspro, F. Federici, C. Viappiani, S. Krol, M. Pisciotta, G. Chirico, F. Cannone, and A. Gliozzi, “Two-photon photolysis of 2-nitrobenzaldehyde monitored by fluorescent-labeled nanocapsules,” J. Phys. Chem. B107, 11008–11012 (2003).
[CrossRef]

Wang, J. X.

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, H. L. Gao, F. T. Si, S. S. Sun, and Y. Tao, “Localized surface plasmon-enhanced electroluminescence from ZnO based heterojunction light-emitting diodes,” Appl. Phys. Lett.99, 181116 (2011).
[CrossRef]

Wang, S.-Y.

G.-Y. Jung, E. Johnston-Halperin, W. Wu, Z. Yu, S.-Y. Wang, W. M. Tong, Z. Li, J. E. Green, B. A. Sheriff, A. Boukai, Y. Bunimovich, J. R. Heath, and R. S. Williams, “Circuit fabrication at 17 nm half-pitch by nanoimprint lithography,” Nano Lett.6, 351–354 (2006).
[CrossRef] [PubMed]

Williams, R. S.

G.-Y. Jung, E. Johnston-Halperin, W. Wu, Z. Yu, S.-Y. Wang, W. M. Tong, Z. Li, J. E. Green, B. A. Sheriff, A. Boukai, Y. Bunimovich, J. R. Heath, and R. S. Williams, “Circuit fabrication at 17 nm half-pitch by nanoimprint lithography,” Nano Lett.6, 351–354 (2006).
[CrossRef] [PubMed]

Willson, C. G.

E. A. Costner, M. W. Lin, W.-L. Jen, and C. G. Willson, “Nanoimprint lithography materials development for semiconductor device fabrication,” Annu. Rev. Mater. Res.39, 155–180 (2009).
[CrossRef]

Wu, W.

G.-Y. Jung, E. Johnston-Halperin, W. Wu, Z. Yu, S.-Y. Wang, W. M. Tong, Z. Li, J. E. Green, B. A. Sheriff, A. Boukai, Y. Bunimovich, J. R. Heath, and R. S. Williams, “Circuit fabrication at 17 nm half-pitch by nanoimprint lithography,” Nano Lett.6, 351–354 (2006).
[CrossRef] [PubMed]

Xiao, D.

D. Xiao, K. W. Kim, S. M. Bedair, and J. M. Zavada, “Design of white light-emitting diodes using InGaN/AlInGaN quantum-well structures,” Appl. Phys. Lett.84, 672–674 (2004).
[CrossRef]

Xu, J.

S. X. Zhang, B. Zhang, J. Xu, K. Xu, Z. J. Yang, Z. X. Qin, T. J. Yu, and D. P. Yu, “Effects of symmetry of GaN-based two-dimensional photonic crystal with quasicrystal lattices on enhancement of surface light extraction,” Appl. Phys. Lett.88, 171103 (2006).
[CrossRef]

Xu, K.

S. X. Zhang, B. Zhang, J. Xu, K. Xu, Z. J. Yang, Z. X. Qin, T. J. Yu, and D. P. Yu, “Effects of symmetry of GaN-based two-dimensional photonic crystal with quasicrystal lattices on enhancement of surface light extraction,” Appl. Phys. Lett.88, 171103 (2006).
[CrossRef]

Yablonovitch, E.

I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, “30% external quantum efficiency from surface textured, thinfilm light emitting diodes,” Appl. Phys. Lett.63, 2174–2176 (1993).
[CrossRef]

Yang, Z. J.

S. X. Zhang, B. Zhang, J. Xu, K. Xu, Z. J. Yang, Z. X. Qin, T. J. Yu, and D. P. Yu, “Effects of symmetry of GaN-based two-dimensional photonic crystal with quasicrystal lattices on enhancement of surface light extraction,” Appl. Phys. Lett.88, 171103 (2006).
[CrossRef]

Yin, Z. G.

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, H. L. Gao, F. T. Si, S. S. Sun, and Y. Tao, “Localized surface plasmon-enhanced electroluminescence from ZnO based heterojunction light-emitting diodes,” Appl. Phys. Lett.99, 181116 (2011).
[CrossRef]

Yu, D. P.

S. X. Zhang, B. Zhang, J. Xu, K. Xu, Z. J. Yang, Z. X. Qin, T. J. Yu, and D. P. Yu, “Effects of symmetry of GaN-based two-dimensional photonic crystal with quasicrystal lattices on enhancement of surface light extraction,” Appl. Phys. Lett.88, 171103 (2006).
[CrossRef]

Yu, T. J.

S. X. Zhang, B. Zhang, J. Xu, K. Xu, Z. J. Yang, Z. X. Qin, T. J. Yu, and D. P. Yu, “Effects of symmetry of GaN-based two-dimensional photonic crystal with quasicrystal lattices on enhancement of surface light extraction,” Appl. Phys. Lett.88, 171103 (2006).
[CrossRef]

Yu, Z.

G.-Y. Jung, E. Johnston-Halperin, W. Wu, Z. Yu, S.-Y. Wang, W. M. Tong, Z. Li, J. E. Green, B. A. Sheriff, A. Boukai, Y. Bunimovich, J. R. Heath, and R. S. Williams, “Circuit fabrication at 17 nm half-pitch by nanoimprint lithography,” Nano Lett.6, 351–354 (2006).
[CrossRef] [PubMed]

Yun, D. K.

H.-H. Park, D.-G. Choi, X. Zhang, S. Jeon, S.-J. Park, S.-W. Lee, S. Kim, K. D. Kim, J.-H. Choi, J. Lee, D. K. Yun, K. J. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Photo-induced hybrid nanopatterning of titanium dioxide via direct imprint lithography,” J. Mater. Chem.20, 1921–1926 (2010).
[CrossRef]

Zavada, J. M.

D. Xiao, K. W. Kim, S. M. Bedair, and J. M. Zavada, “Design of white light-emitting diodes using InGaN/AlInGaN quantum-well structures,” Appl. Phys. Lett.84, 672–674 (2004).
[CrossRef]

Zhang, B.

S. X. Zhang, B. Zhang, J. Xu, K. Xu, Z. J. Yang, Z. X. Qin, T. J. Yu, and D. P. Yu, “Effects of symmetry of GaN-based two-dimensional photonic crystal with quasicrystal lattices on enhancement of surface light extraction,” Appl. Phys. Lett.88, 171103 (2006).
[CrossRef]

Zhang, S. G.

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, H. L. Gao, F. T. Si, S. S. Sun, and Y. Tao, “Localized surface plasmon-enhanced electroluminescence from ZnO based heterojunction light-emitting diodes,” Appl. Phys. Lett.99, 181116 (2011).
[CrossRef]

Zhang, S. X.

S. X. Zhang, B. Zhang, J. Xu, K. Xu, Z. J. Yang, Z. X. Qin, T. J. Yu, and D. P. Yu, “Effects of symmetry of GaN-based two-dimensional photonic crystal with quasicrystal lattices on enhancement of surface light extraction,” Appl. Phys. Lett.88, 171103 (2006).
[CrossRef]

Zhang, X.

H.-H. Park, X. Zhang, S.-W. Lee, K.-D. Kim, D.-G. Choi, J.-H. Choi, J. Lee, E.-S. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Facile nanopatterning of zirconium dioxide films via direct ultraviolet-assisted nanoimprint lithography,” J. Mater. Chem.21, 657–662 (2010).
[CrossRef]

H.-H. Park, D.-G. Choi, X. Zhang, S. Jeon, S.-J. Park, S.-W. Lee, S. Kim, K. D. Kim, J.-H. Choi, J. Lee, D. K. Yun, K. J. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Photo-induced hybrid nanopatterning of titanium dioxide via direct imprint lithography,” J. Mater. Chem.20, 1921–1926 (2010).
[CrossRef]

Zhang, X. W.

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, H. L. Gao, F. T. Si, S. S. Sun, and Y. Tao, “Localized surface plasmon-enhanced electroluminescence from ZnO based heterojunction light-emitting diodes,” Appl. Phys. Lett.99, 181116 (2011).
[CrossRef]

Zhong, J.

J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett.90, 203515 (2007).
[CrossRef]

Annu. Rev. Mater. Res. (1)

E. A. Costner, M. W. Lin, W.-L. Jen, and C. G. Willson, “Nanoimprint lithography materials development for semiconductor device fabrication,” Annu. Rev. Mater. Res.39, 155–180 (2009).
[CrossRef]

Appl. Phys. Lett. (10)

D.-H. Kim, C.-O. Cho, Y.-G. Roh, H. Jeon, Y. S. Park, J. Cho, J. S. Im, C. Sone, Y. Park, W. J. Choi, and Q.-H. Park, “Enhanced light extraction from GaN-based light-emitting diodes with holographically generated two-dimensional photonic crystal patterns,” Appl. Phys. Lett.87, 203508 (2005).
[CrossRef]

S. G. Zhang, X. W. Zhang, Z. G. Yin, J. X. Wang, J. J. Dong, H. L. Gao, F. T. Si, S. S. Sun, and Y. Tao, “Localized surface plasmon-enhanced electroluminescence from ZnO based heterojunction light-emitting diodes,” Appl. Phys. Lett.99, 181116 (2011).
[CrossRef]

S. X. Zhang, B. Zhang, J. Xu, K. Xu, Z. J. Yang, Z. X. Qin, T. J. Yu, and D. P. Yu, “Effects of symmetry of GaN-based two-dimensional photonic crystal with quasicrystal lattices on enhancement of surface light extraction,” Appl. Phys. Lett.88, 171103 (2006).
[CrossRef]

L. Chen and A. V. Nurmikko, “Fabrication and performance of efficient blue light emitting III-nitride photonic crystals,” Appl. Phys. Lett.85, 3663–3665 (2004).
[CrossRef]

D. Xiao, K. W. Kim, S. M. Bedair, and J. M. Zavada, “Design of white light-emitting diodes using InGaN/AlInGaN quantum-well structures,” Appl. Phys. Lett.84, 672–674 (2004).
[CrossRef]

M. R. Krames, M. Ochiai-Holcomb, G. E. Höfler, C. Carter-Coman, E. I. Chen, I.-H. Tan, P. Grillot, N. F. Gardner, H. C. Chui, J.-W. Huang, S. A. Stockman, F. A. Kish, M. G. Craford, T. S. Tan, C. P. Kocot, M. Hueschen, J. Posselt, B. Loh, G. Sasser, and D. Collins, “High-power truncated-inverted-pyramid (AlxGa1−x)0.5In0.5P/GaP light emitting diodes exhibiting >50% external quantum efficiency,” Appl. Phys. Lett.75, 2365–2367 (1999).
[CrossRef]

I. Schnitzer, E. Yablonovitch, C. Caneau, T. J. Gmitter, and A. Scherer, “30% external quantum efficiency from surface textured, thinfilm light emitting diodes,” Appl. Phys. Lett.63, 2174–2176 (1993).
[CrossRef]

Z.-Y. Kim, M.-K. Kwon, K.-W. Lee, S.-J. Park, S. H. Kim, and K.-D. Lee, “Enhanced light extraction from GaN-based green light-emitting diode with photonic crystal,” Appl. Phys. Lett.91, 181109 (2007).
[CrossRef]

J.-Y. Kim, M.-K. Kwon, S.-J. Park, S. H. Kim, and K.-D. Lee, “Enhancement of light extraction from GaN-based green light-emitting diodes using selective area photonic crystal,” Appl. Phys. Lett.96, 251103 (2010).
[CrossRef]

J. Zhong, H. Chen, G. Saraf, Y. Lu, C. K. Choi, J. J. Song, D. M. Mackie, and H. Shen, “Integrated ZnO nanotips on GaN light emitting diodes for enhanced emission efficiency,” Appl. Phys. Lett.90, 203515 (2007).
[CrossRef]

IEEE J. Quantum Electron. (1)

D. H. Long, I.-K. Hwang, and S.-W. Ryu, “Design optimization of photonic crystal structure for improved light extraction of GaN LED,” IEEE J. Quantum Electron.15, 1257–1263 (2009).
[CrossRef]

J. Korean Phys. Soc. (1)

R. Han-Youl, “Modification of the light extraction efficiency in micro-cavity vertical InGaN light-emitting diode structures,” J. Korean Phys. Soc.55, 1267–1271 (2009).
[CrossRef]

J. Mater. Chem. (2)

H.-H. Park, D.-G. Choi, X. Zhang, S. Jeon, S.-J. Park, S.-W. Lee, S. Kim, K. D. Kim, J.-H. Choi, J. Lee, D. K. Yun, K. J. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Photo-induced hybrid nanopatterning of titanium dioxide via direct imprint lithography,” J. Mater. Chem.20, 1921–1926 (2010).
[CrossRef]

H.-H. Park, X. Zhang, S.-W. Lee, K.-D. Kim, D.-G. Choi, J.-H. Choi, J. Lee, E.-S. Lee, H.-H. Park, R. H. Hill, and J.-H. Jeong, “Facile nanopatterning of zirconium dioxide films via direct ultraviolet-assisted nanoimprint lithography,” J. Mater. Chem.21, 657–662 (2010).
[CrossRef]

J. Opt. Soc. Am. A (1)

J. Phys. Chem. B (3)

J. Choi and M. Terazima, “Photochemical reaction of 2-nitrobenzaldehyde by monitoring the diffusion coefficient,” J. Phys. Chem. B107(35), 9552–9557 (2003).
[CrossRef]

A. Diaspro, F. Federici, C. Viappiani, S. Krol, M. Pisciotta, G. Chirico, F. Cannone, and A. Gliozzi, “Two-photon photolysis of 2-nitrobenzaldehyde monitored by fluorescent-labeled nanocapsules,” J. Phys. Chem. B107, 11008–11012 (2003).
[CrossRef]

E. A. Meulenkamp, “Size dependence of the dissolution of ZnO nanoparticles,” J. Phys. Chem. B102, 7764–7769 (1998).
[CrossRef]

J. Phys. D Appl. Phys. (1)

S.-M. Kim, K. S. Kim, G. Y. Jung, J. H. Baek, H. Jeong, and M. S. Jeong, “Electroluminescence comparison of photonic crystal light-emitting diodes with random and periodic hole structure,” J. Phys. D Appl. Phys.42, 152004 (2009).
[CrossRef]

Jpn. J. Appl. Phys. (1)

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys.40, L583–L585 (2001).
[CrossRef]

Nano Lett. (1)

G.-Y. Jung, E. Johnston-Halperin, W. Wu, Z. Yu, S.-Y. Wang, W. M. Tong, Z. Li, J. E. Green, B. A. Sheriff, A. Boukai, Y. Bunimovich, J. R. Heath, and R. S. Williams, “Circuit fabrication at 17 nm half-pitch by nanoimprint lithography,” Nano Lett.6, 351–354 (2006).
[CrossRef] [PubMed]

Nat. Mater. (1)

K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater.3, 601–605 (2004).
[CrossRef] [PubMed]

Nat. Photonics (1)

S. Pimputkar, J. S. Speck, S. P. DenBaars, and S. Nakamura, “Prospects for LED lighting,” Nat. Photonics3, 180–182 (2009).
[CrossRef]

Opt. Express (2)

Science (2)

E. Schubert and J. Kim, “Solid-state light sources getting smart,” Science308,1274–1278 (2005).
[CrossRef] [PubMed]

S. Y. Chou, P. R. Krauss, and P. J. Renstrom, “Imprint lithography with 25-nanometer resolution,” Science272, 85–87 (1996).
[CrossRef]

Thin Solid Films (1)

K.-J. Byeon, E.-J. Hong, H. Park, J.-Y. Cho, S.-H. Lee, J. Jhin, J. H. Baek, and H. Lee, “Full wafer scale nanoimprint lithography for GaN-based light-emitting diodes,” Thin Solid Films519, 2241–2246 (2011).
[CrossRef]

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Metrics