Abstract

High-oriented Li–Al layered double hydroxide (LDH) films were grown on an InGaN light-emitting diode (LED) structures by immersing in an aqueous alkaline Al3+- and Li+-containing solution. The stand upward and adjacent Li-Al LDH platelet structure was formed on the LED structure as a textured film to increase the light extraction efficiency. The light output power of the LED structure with the Li-Al LDH platelet structure had a 31% enhancement compared with a conventional LED structure at 20 mA. The reverse leakage currents, at −5V, were measured at −2.3 × 10−8A and −1.0 × 10−10A for the LED structures without and with the LDH film that indicated the Li-Al LDH film had the insulated property acted a passivation layer that had potential to replace the conventional SiO2 and Si3N4 passivation layers. The Li-Al LDH layer had the textured platelet structure and the insulated property covering whole the LED surface that has potential for high efficiency InGaN LED applications.

© 2012 OSA

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    [CrossRef]
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    [CrossRef]
  4. H. K. Cho, J. Jang, J. H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K. D. Lee, S. H. Kim, K. Lee, S. K. Kim, and Y. H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express14(19), 8654–8660 (2006).
    [CrossRef] [PubMed]
  5. H. G. Kim, M. G. Na, H. K. Kim, H. Y. Kim, J. H. Ryu, T. V. Cuong, and C.-H. Hong, “Effect of periodic deflector embedded in InGaN/GaN light emitting diode,” Appl. Phys. Lett.90(26), 261117 (2007).
    [CrossRef]
  6. C. C. Yang, C. F. Lin, C. M. Lin, C. C. Chang, K. T. Chen, J. F. Chien, and C. Y. Chang, “Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces,” Appl. Phys. Lett.93(20), 203103 (2008).
    [CrossRef]
  7. C. B. Soh, B. Wang, S. J. Chua, V. K. Lin, R. J. Tan, and S. Tripathy, “Fabrication of a nano-cone array on a p-GaN surface for enhanced light extraction efficiency from GaN-based tunable wavelength LEDs,” Nanotechnology19(40), 405303 (2008).
    [CrossRef] [PubMed]
  8. Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures,” Opt. Express17(16), 13747–13757 (2009).
    [CrossRef] [PubMed]
  9. M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett.95(4), 041109 (2009).
    [CrossRef]
  10. M. K. Lee, C. L. Ho, C. C. Lin, N. R. Cheng, M. H. Houng, Y. K. Chien, and C. F. Yen, “Light extraction efficiency enhancement of GaN blue LED with ZnO nanotips prepared by aqueous solution deposition,” J. Electrochem. Soc.158(5), D286–D289 (2011).
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    [CrossRef]
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    [CrossRef]
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    [CrossRef]
  16. Y. K. Ee, X. H. Li, J. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire,” J. Cryst. Growth312(8), 1311–1315 (2010).
    [CrossRef]
  17. Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned Sapphire,” Appl. Phys. Lett.98(15), 151102 (2011).
    [CrossRef]
  18. K. J. Byeon, J. Y. Cho, J. Kim, H. Park, and H. Lee, “Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography,” Opt. Express20(10), 11423–11432 (2012).
    [CrossRef] [PubMed]
  19. J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys.110(11), 113110 (2011).
    [CrossRef]
  20. L. Zhang, K. Cheng, H. Liang, R. Lieten, M. Leys, and G. Borghs, “Photoluminescence studies of polarization effects in InGaN/(In)GaN multiple quantum well structures,” Jpn. J. Appl. Phys.51, 030207 (2012).
    [CrossRef]
  21. H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98(15), 151115 (2011).
    [CrossRef]
  22. C. H. Lu, C. C. Lan, Y. L. Lai, Y. L. Li, and C. P. Liu, “Enhancement of green emission from InGaN/GaN multiple quantum wells via coupling to surface plasmons in a two-dimensional silver array,” Adv. Funct. Mater.21(24), 4719–4723 (2011).
    [CrossRef]
  23. S. Choi, H. J. Kim, S. S. Kim, J. Liu, J. Kim, J. H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett.96(22), 221105 (2010).
    [CrossRef]
  24. H. Zhao, G. Liu, R. A. Arif, and N. Tansu, “Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes,” Solid-State Electron.54(10), 1119–1124 (2010).
    [CrossRef]
  25. P. Yu, C. H. Chang, C. H. Chiu, C. S. Yang, J. C. Yu, H. C. Kuo, S. H. Hsu, and Y. C. Chang, “Efficiency enhancement of GaAs photovoltaics employing indium-tin-oxide nano-columns,” Adv. Mater. (Deerfield Beach Fla.)21(16), 1618–1621 (2009).
    [CrossRef]
  26. C. H. Chiu, P. Yu, C. H. Chang, C. S. Yang, M. H. Hsu, H. C. Kuo, and M. A. Tsai, “Oblique electron-beam evaporation of distinctive indium-tin-oxide nanorods for enhanced light extraction from InGaN/GaN light emitting diodes,” Opt. Express17(23), 21250–21256 (2009).
    [CrossRef] [PubMed]
  27. J. H. Kang, J. H. Ryu, H. K. Kim, H. Y. Kim, N. Han, Y. J. Park, P. Uthirakumar, and C.-H. Hong, “Comparison of various surface textured layer in InGaN LEDs for high light extraction efficiency,” Opt. Express19(4), 3637–3647 (2011).
    [CrossRef] [PubMed]
  28. T. B. Wei, Q. F. Kong, J. X. Wang, J. Li, Y. P. Zeng, G. H. Wang, J. M. Li, Y. X. Liao, and F. T. Yi, “Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands,” Opt. Express19(2), 1065–1071 (2011).
    [CrossRef] [PubMed]
  29. H. Kim, J. Cho, Y. Park, and T. Y. Seong, “Leakage current origins and passivation effect of GaN-based light emitting diodes fabricated with Ag p-contacts,” Appl. Phys. Lett.92(9), 092115 (2008).
    [CrossRef]
  30. Z. L. Hsieh, M. C. Lin, and J. Y. Uan, “Rapid direct growth of Li–Al layered double hydroxide (LDH) film on glass, silicon wafer and carbon cloth and characterization of LDH film on substrates,” J. Mater. Chem.21(6), 1880 (2011).
    [CrossRef]
  31. A. David, T. Fujii, B. Moran, S. Nakamura, S. P. DenBaars, C. Weisbuch, and H. Benisty, “Photonic crystal laser lift-off GaN light-emitting diodes,” Appl. Phys. Lett.88(13), 133514 (2006).
    [CrossRef]

2012 (3)

J. Jewell, D. Simeonov, S. C. Huang, Y. L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett.100(17), 171105 (2012).
[CrossRef]

L. Zhang, K. Cheng, H. Liang, R. Lieten, M. Leys, and G. Borghs, “Photoluminescence studies of polarization effects in InGaN/(In)GaN multiple quantum well structures,” Jpn. J. Appl. Phys.51, 030207 (2012).
[CrossRef]

K. J. Byeon, J. Y. Cho, J. Kim, H. Park, and H. Lee, “Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography,” Opt. Express20(10), 11423–11432 (2012).
[CrossRef] [PubMed]

2011 (11)

Z. L. Hsieh, M. C. Lin, and J. Y. Uan, “Rapid direct growth of Li–Al layered double hydroxide (LDH) film on glass, silicon wafer and carbon cloth and characterization of LDH film on substrates,” J. Mater. Chem.21(6), 1880 (2011).
[CrossRef]

T. B. Wei, Q. F. Kong, J. X. Wang, J. Li, Y. P. Zeng, G. H. Wang, J. M. Li, Y. X. Liao, and F. T. Yi, “Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands,” Opt. Express19(2), 1065–1071 (2011).
[CrossRef] [PubMed]

J. H. Kang, J. H. Ryu, H. K. Kim, H. Y. Kim, N. Han, Y. J. Park, P. Uthirakumar, and C.-H. Hong, “Comparison of various surface textured layer in InGaN LEDs for high light extraction efficiency,” Opt. Express19(4), 3637–3647 (2011).
[CrossRef] [PubMed]

H. P. Zhao, G. Y. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGan light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011).
[CrossRef] [PubMed]

H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98(15), 151115 (2011).
[CrossRef]

C. H. Lu, C. C. Lan, Y. L. Lai, Y. L. Li, and C. P. Liu, “Enhancement of green emission from InGaN/GaN multiple quantum wells via coupling to surface plasmons in a two-dimensional silver array,” Adv. Funct. Mater.21(24), 4719–4723 (2011).
[CrossRef]

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned Sapphire,” Appl. Phys. Lett.98(15), 151102 (2011).
[CrossRef]

J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys.110(11), 113110 (2011).
[CrossRef]

X. H. Li, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photonics J.3(3), 489–499 (2011).
[CrossRef]

M. K. Lee, C. L. Ho, C. C. Lin, N. R. Cheng, M. H. Houng, Y. K. Chien, and C. F. Yen, “Light extraction efficiency enhancement of GaN blue LED with ZnO nanotips prepared by aqueous solution deposition,” J. Electrochem. Soc.158(5), D286–D289 (2011).
[CrossRef]

S. Chhajed, W. Lee, J. Cho, E. F. Schubert, and J. K. Kim, “Strong light extraction enhancement in GaInN light-emitting diodes by using self-organized nanoscale patterning of p-type GaN,” Appl. Phys. Lett.98(7), 071102 (2011).
[CrossRef]

2010 (3)

Y. K. Ee, X. H. Li, J. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire,” J. Cryst. Growth312(8), 1311–1315 (2010).
[CrossRef]

S. Choi, H. J. Kim, S. S. Kim, J. Liu, J. Kim, J. H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett.96(22), 221105 (2010).
[CrossRef]

H. Zhao, G. Liu, R. A. Arif, and N. Tansu, “Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes,” Solid-State Electron.54(10), 1119–1124 (2010).
[CrossRef]

2009 (5)

P. Yu, C. H. Chang, C. H. Chiu, C. S. Yang, J. C. Yu, H. C. Kuo, S. H. Hsu, and Y. C. Chang, “Efficiency enhancement of GaAs photovoltaics employing indium-tin-oxide nano-columns,” Adv. Mater. (Deerfield Beach Fla.)21(16), 1618–1621 (2009).
[CrossRef]

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett.95(4), 041109 (2009).
[CrossRef]

Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, H. Zhao, J. F. Gilchrist, and N. Tansu, “Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses,” IEEE J. Sel. Top. Quantum Electron.15(4), 1218–1225 (2009).
[CrossRef]

Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures,” Opt. Express17(16), 13747–13757 (2009).
[CrossRef] [PubMed]

C. H. Chiu, P. Yu, C. H. Chang, C. S. Yang, M. H. Hsu, H. C. Kuo, and M. A. Tsai, “Oblique electron-beam evaporation of distinctive indium-tin-oxide nanorods for enhanced light extraction from InGaN/GaN light emitting diodes,” Opt. Express17(23), 21250–21256 (2009).
[CrossRef] [PubMed]

2008 (3)

H. Kim, J. Cho, Y. Park, and T. Y. Seong, “Leakage current origins and passivation effect of GaN-based light emitting diodes fabricated with Ag p-contacts,” Appl. Phys. Lett.92(9), 092115 (2008).
[CrossRef]

C. C. Yang, C. F. Lin, C. M. Lin, C. C. Chang, K. T. Chen, J. F. Chien, and C. Y. Chang, “Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces,” Appl. Phys. Lett.93(20), 203103 (2008).
[CrossRef]

C. B. Soh, B. Wang, S. J. Chua, V. K. Lin, R. J. Tan, and S. Tripathy, “Fabrication of a nano-cone array on a p-GaN surface for enhanced light extraction efficiency from GaN-based tunable wavelength LEDs,” Nanotechnology19(40), 405303 (2008).
[CrossRef] [PubMed]

2007 (2)

H. G. Kim, M. G. Na, H. K. Kim, H. Y. Kim, J. H. Ryu, T. V. Cuong, and C.-H. Hong, “Effect of periodic deflector embedded in InGaN/GaN light emitting diode,” Appl. Phys. Lett.90(26), 261117 (2007).
[CrossRef]

Y. K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, and J. F. Gilchrist, “Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays,” Appl. Phys. Lett.91(22), 221107 (2007).
[CrossRef]

2006 (3)

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett.88(6), 061124 (2006).
[CrossRef]

A. David, T. Fujii, B. Moran, S. Nakamura, S. P. DenBaars, C. Weisbuch, and H. Benisty, “Photonic crystal laser lift-off GaN light-emitting diodes,” Appl. Phys. Lett.88(13), 133514 (2006).
[CrossRef]

H. K. Cho, J. Jang, J. H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K. D. Lee, S. H. Kim, K. Lee, S. K. Kim, and Y. H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express14(19), 8654–8660 (2006).
[CrossRef] [PubMed]

2001 (1)

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys.40(Part 2, 6B), L583–L585 (2001).
[CrossRef]

Arif, R. A.

H. Zhao, G. Liu, R. A. Arif, and N. Tansu, “Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes,” Solid-State Electron.54(10), 1119–1124 (2010).
[CrossRef]

Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures,” Opt. Express17(16), 13747–13757 (2009).
[CrossRef] [PubMed]

Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, H. Zhao, J. F. Gilchrist, and N. Tansu, “Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses,” IEEE J. Sel. Top. Quantum Electron.15(4), 1218–1225 (2009).
[CrossRef]

Y. K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, and J. F. Gilchrist, “Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays,” Appl. Phys. Lett.91(22), 221107 (2007).
[CrossRef]

Benisty, H.

A. David, T. Fujii, B. Moran, S. Nakamura, S. P. DenBaars, C. Weisbuch, and H. Benisty, “Photonic crystal laser lift-off GaN light-emitting diodes,” Appl. Phys. Lett.88(13), 133514 (2006).
[CrossRef]

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett.88(6), 061124 (2006).
[CrossRef]

Biser, J.

Y. K. Ee, X. H. Li, J. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire,” J. Cryst. Growth312(8), 1311–1315 (2010).
[CrossRef]

Borghs, G.

L. Zhang, K. Cheng, H. Liang, R. Lieten, M. Leys, and G. Borghs, “Photoluminescence studies of polarization effects in InGaN/(In)GaN multiple quantum well structures,” Jpn. J. Appl. Phys.51, 030207 (2012).
[CrossRef]

Byeon, K. J.

Cao, W.

Y. K. Ee, X. H. Li, J. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire,” J. Cryst. Growth312(8), 1311–1315 (2010).
[CrossRef]

Chan, H. M.

Y. K. Ee, X. H. Li, J. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire,” J. Cryst. Growth312(8), 1311–1315 (2010).
[CrossRef]

Chang, C. C.

C. C. Yang, C. F. Lin, C. M. Lin, C. C. Chang, K. T. Chen, J. F. Chien, and C. Y. Chang, “Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces,” Appl. Phys. Lett.93(20), 203103 (2008).
[CrossRef]

Chang, C. H.

P. Yu, C. H. Chang, C. H. Chiu, C. S. Yang, J. C. Yu, H. C. Kuo, S. H. Hsu, and Y. C. Chang, “Efficiency enhancement of GaAs photovoltaics employing indium-tin-oxide nano-columns,” Adv. Mater. (Deerfield Beach Fla.)21(16), 1618–1621 (2009).
[CrossRef]

C. H. Chiu, P. Yu, C. H. Chang, C. S. Yang, M. H. Hsu, H. C. Kuo, and M. A. Tsai, “Oblique electron-beam evaporation of distinctive indium-tin-oxide nanorods for enhanced light extraction from InGaN/GaN light emitting diodes,” Opt. Express17(23), 21250–21256 (2009).
[CrossRef] [PubMed]

Chang, C. Y.

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett.95(4), 041109 (2009).
[CrossRef]

C. C. Yang, C. F. Lin, C. M. Lin, C. C. Chang, K. T. Chen, J. F. Chien, and C. Y. Chang, “Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces,” Appl. Phys. Lett.93(20), 203103 (2008).
[CrossRef]

Chang, Y. C.

P. Yu, C. H. Chang, C. H. Chiu, C. S. Yang, J. C. Yu, H. C. Kuo, S. H. Hsu, and Y. C. Chang, “Efficiency enhancement of GaAs photovoltaics employing indium-tin-oxide nano-columns,” Adv. Mater. (Deerfield Beach Fla.)21(16), 1618–1621 (2009).
[CrossRef]

Chen, K. T.

C. C. Yang, C. F. Lin, C. M. Lin, C. C. Chang, K. T. Chen, J. F. Chien, and C. Y. Chang, “Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces,” Appl. Phys. Lett.93(20), 203103 (2008).
[CrossRef]

Cheng, K.

L. Zhang, K. Cheng, H. Liang, R. Lieten, M. Leys, and G. Borghs, “Photoluminescence studies of polarization effects in InGaN/(In)GaN multiple quantum well structures,” Jpn. J. Appl. Phys.51, 030207 (2012).
[CrossRef]

Cheng, N. R.

M. K. Lee, C. L. Ho, C. C. Lin, N. R. Cheng, M. H. Houng, Y. K. Chien, and C. F. Yen, “Light extraction efficiency enhancement of GaN blue LED with ZnO nanotips prepared by aqueous solution deposition,” J. Electrochem. Soc.158(5), D286–D289 (2011).
[CrossRef]

Cheng, Y. J.

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett.95(4), 041109 (2009).
[CrossRef]

Chhajed, S.

S. Chhajed, W. Lee, J. Cho, E. F. Schubert, and J. K. Kim, “Strong light extraction enhancement in GaInN light-emitting diodes by using self-organized nanoscale patterning of p-type GaN,” Appl. Phys. Lett.98(7), 071102 (2011).
[CrossRef]

Chien, J. F.

C. C. Yang, C. F. Lin, C. M. Lin, C. C. Chang, K. T. Chen, J. F. Chien, and C. Y. Chang, “Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces,” Appl. Phys. Lett.93(20), 203103 (2008).
[CrossRef]

Chien, Y. K.

M. K. Lee, C. L. Ho, C. C. Lin, N. R. Cheng, M. H. Houng, Y. K. Chien, and C. F. Yen, “Light extraction efficiency enhancement of GaN blue LED with ZnO nanotips prepared by aqueous solution deposition,” J. Electrochem. Soc.158(5), D286–D289 (2011).
[CrossRef]

Chiu, C. H.

P. Yu, C. H. Chang, C. H. Chiu, C. S. Yang, J. C. Yu, H. C. Kuo, S. H. Hsu, and Y. C. Chang, “Efficiency enhancement of GaAs photovoltaics employing indium-tin-oxide nano-columns,” Adv. Mater. (Deerfield Beach Fla.)21(16), 1618–1621 (2009).
[CrossRef]

C. H. Chiu, P. Yu, C. H. Chang, C. S. Yang, M. H. Hsu, H. C. Kuo, and M. A. Tsai, “Oblique electron-beam evaporation of distinctive indium-tin-oxide nanorods for enhanced light extraction from InGaN/GaN light emitting diodes,” Opt. Express17(23), 21250–21256 (2009).
[CrossRef] [PubMed]

Cho, H. K.

Cho, J.

S. Chhajed, W. Lee, J. Cho, E. F. Schubert, and J. K. Kim, “Strong light extraction enhancement in GaInN light-emitting diodes by using self-organized nanoscale patterning of p-type GaN,” Appl. Phys. Lett.98(7), 071102 (2011).
[CrossRef]

H. Kim, J. Cho, Y. Park, and T. Y. Seong, “Leakage current origins and passivation effect of GaN-based light emitting diodes fabricated with Ag p-contacts,” Appl. Phys. Lett.92(9), 092115 (2008).
[CrossRef]

Cho, J. Y.

Choe, Y. H.

Choi, J.

Choi, J. H.

Choi, S.

S. Choi, H. J. Kim, S. S. Kim, J. Liu, J. Kim, J. H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett.96(22), 221105 (2010).
[CrossRef]

Chua, S. J.

C. B. Soh, B. Wang, S. J. Chua, V. K. Lin, R. J. Tan, and S. Tripathy, “Fabrication of a nano-cone array on a p-GaN surface for enhanced light extraction efficiency from GaN-based tunable wavelength LEDs,” Nanotechnology19(40), 405303 (2008).
[CrossRef] [PubMed]

Cuong, T. V.

H. G. Kim, M. G. Na, H. K. Kim, H. Y. Kim, J. H. Ryu, T. V. Cuong, and C.-H. Hong, “Effect of periodic deflector embedded in InGaN/GaN light emitting diode,” Appl. Phys. Lett.90(26), 261117 (2007).
[CrossRef]

David, A.

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett.88(6), 061124 (2006).
[CrossRef]

A. David, T. Fujii, B. Moran, S. Nakamura, S. P. DenBaars, C. Weisbuch, and H. Benisty, “Photonic crystal laser lift-off GaN light-emitting diodes,” Appl. Phys. Lett.88(13), 133514 (2006).
[CrossRef]

DenBaars, S. P.

A. David, T. Fujii, B. Moran, S. Nakamura, S. P. DenBaars, C. Weisbuch, and H. Benisty, “Photonic crystal laser lift-off GaN light-emitting diodes,” Appl. Phys. Lett.88(13), 133514 (2006).
[CrossRef]

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett.88(6), 061124 (2006).
[CrossRef]

Detchprohm, T.

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned Sapphire,” Appl. Phys. Lett.98(15), 151102 (2011).
[CrossRef]

Dierolf, V.

Dupuis, R. D.

S. Choi, H. J. Kim, S. S. Kim, J. Liu, J. Kim, J. H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett.96(22), 221105 (2010).
[CrossRef]

Ee, Y. K.

Y. K. Ee, X. H. Li, J. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire,” J. Cryst. Growth312(8), 1311–1315 (2010).
[CrossRef]

Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures,” Opt. Express17(16), 13747–13757 (2009).
[CrossRef] [PubMed]

Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, H. Zhao, J. F. Gilchrist, and N. Tansu, “Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses,” IEEE J. Sel. Top. Quantum Electron.15(4), 1218–1225 (2009).
[CrossRef]

Y. K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, and J. F. Gilchrist, “Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays,” Appl. Phys. Lett.91(22), 221107 (2007).
[CrossRef]

Ee, Y.-K.

X. H. Li, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photonics J.3(3), 489–499 (2011).
[CrossRef]

Fischer, A. M.

S. Choi, H. J. Kim, S. S. Kim, J. Liu, J. Kim, J. H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett.96(22), 221105 (2010).
[CrossRef]

Fujii, T.

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett.88(6), 061124 (2006).
[CrossRef]

A. David, T. Fujii, B. Moran, S. Nakamura, S. P. DenBaars, C. Weisbuch, and H. Benisty, “Photonic crystal laser lift-off GaN light-emitting diodes,” Appl. Phys. Lett.88(13), 133514 (2006).
[CrossRef]

Gilchrist, J. F.

X. H. Li, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photonics J.3(3), 489–499 (2011).
[CrossRef]

Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures,” Opt. Express17(16), 13747–13757 (2009).
[CrossRef] [PubMed]

Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, H. Zhao, J. F. Gilchrist, and N. Tansu, “Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses,” IEEE J. Sel. Top. Quantum Electron.15(4), 1218–1225 (2009).
[CrossRef]

Y. K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, and J. F. Gilchrist, “Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays,” Appl. Phys. Lett.91(22), 221107 (2007).
[CrossRef]

Han, N.

Ho, C. L.

M. K. Lee, C. L. Ho, C. C. Lin, N. R. Cheng, M. H. Houng, Y. K. Chien, and C. F. Yen, “Light extraction efficiency enhancement of GaN blue LED with ZnO nanotips prepared by aqueous solution deposition,” J. Electrochem. Soc.158(5), D286–D289 (2011).
[CrossRef]

Hong, C.-H.

J. H. Kang, J. H. Ryu, H. K. Kim, H. Y. Kim, N. Han, Y. J. Park, P. Uthirakumar, and C.-H. Hong, “Comparison of various surface textured layer in InGaN LEDs for high light extraction efficiency,” Opt. Express19(4), 3637–3647 (2011).
[CrossRef] [PubMed]

H. G. Kim, M. G. Na, H. K. Kim, H. Y. Kim, J. H. Ryu, T. V. Cuong, and C.-H. Hong, “Effect of periodic deflector embedded in InGaN/GaN light emitting diode,” Appl. Phys. Lett.90(26), 261117 (2007).
[CrossRef]

Hou, W.

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned Sapphire,” Appl. Phys. Lett.98(15), 151102 (2011).
[CrossRef]

Houng, M. H.

M. K. Lee, C. L. Ho, C. C. Lin, N. R. Cheng, M. H. Houng, Y. K. Chien, and C. F. Yen, “Light extraction efficiency enhancement of GaN blue LED with ZnO nanotips prepared by aqueous solution deposition,” J. Electrochem. Soc.158(5), D286–D289 (2011).
[CrossRef]

Hsieh, Z. L.

Z. L. Hsieh, M. C. Lin, and J. Y. Uan, “Rapid direct growth of Li–Al layered double hydroxide (LDH) film on glass, silicon wafer and carbon cloth and characterization of LDH film on substrates,” J. Mater. Chem.21(6), 1880 (2011).
[CrossRef]

Hsu, M. H.

Hsu, S. C.

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett.95(4), 041109 (2009).
[CrossRef]

Hsu, S. H.

P. Yu, C. H. Chang, C. H. Chiu, C. S. Yang, J. C. Yu, H. C. Kuo, S. H. Hsu, and Y. C. Chang, “Efficiency enhancement of GaAs photovoltaics employing indium-tin-oxide nano-columns,” Adv. Mater. (Deerfield Beach Fla.)21(16), 1618–1621 (2009).
[CrossRef]

Hu, E. L.

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett.88(6), 061124 (2006).
[CrossRef]

Hu, Y. L.

J. Jewell, D. Simeonov, S. C. Huang, Y. L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett.100(17), 171105 (2012).
[CrossRef]

Huang, S. C.

J. Jewell, D. Simeonov, S. C. Huang, Y. L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett.100(17), 171105 (2012).
[CrossRef]

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett.95(4), 041109 (2009).
[CrossRef]

Hung, C. W.

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett.95(4), 041109 (2009).
[CrossRef]

Imada, Y.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys.40(Part 2, 6B), L583–L585 (2001).
[CrossRef]

Jang, J.

Jewell, J.

J. Jewell, D. Simeonov, S. C. Huang, Y. L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett.100(17), 171105 (2012).
[CrossRef]

Kang, J. H.

Kato, M.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys.40(Part 2, 6B), L583–L585 (2001).
[CrossRef]

Kim, H.

H. Kim, J. Cho, Y. Park, and T. Y. Seong, “Leakage current origins and passivation effect of GaN-based light emitting diodes fabricated with Ag p-contacts,” Appl. Phys. Lett.92(9), 092115 (2008).
[CrossRef]

Kim, H. G.

H. G. Kim, M. G. Na, H. K. Kim, H. Y. Kim, J. H. Ryu, T. V. Cuong, and C.-H. Hong, “Effect of periodic deflector embedded in InGaN/GaN light emitting diode,” Appl. Phys. Lett.90(26), 261117 (2007).
[CrossRef]

Kim, H. J.

S. Choi, H. J. Kim, S. S. Kim, J. Liu, J. Kim, J. H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett.96(22), 221105 (2010).
[CrossRef]

Kim, H. K.

J. H. Kang, J. H. Ryu, H. K. Kim, H. Y. Kim, N. Han, Y. J. Park, P. Uthirakumar, and C.-H. Hong, “Comparison of various surface textured layer in InGaN LEDs for high light extraction efficiency,” Opt. Express19(4), 3637–3647 (2011).
[CrossRef] [PubMed]

H. G. Kim, M. G. Na, H. K. Kim, H. Y. Kim, J. H. Ryu, T. V. Cuong, and C.-H. Hong, “Effect of periodic deflector embedded in InGaN/GaN light emitting diode,” Appl. Phys. Lett.90(26), 261117 (2007).
[CrossRef]

Kim, H. Y.

J. H. Kang, J. H. Ryu, H. K. Kim, H. Y. Kim, N. Han, Y. J. Park, P. Uthirakumar, and C.-H. Hong, “Comparison of various surface textured layer in InGaN LEDs for high light extraction efficiency,” Opt. Express19(4), 3637–3647 (2011).
[CrossRef] [PubMed]

H. G. Kim, M. G. Na, H. K. Kim, H. Y. Kim, J. H. Ryu, T. V. Cuong, and C.-H. Hong, “Effect of periodic deflector embedded in InGaN/GaN light emitting diode,” Appl. Phys. Lett.90(26), 261117 (2007).
[CrossRef]

Kim, J.

Kim, J. K.

S. Chhajed, W. Lee, J. Cho, E. F. Schubert, and J. K. Kim, “Strong light extraction enhancement in GaInN light-emitting diodes by using self-organized nanoscale patterning of p-type GaN,” Appl. Phys. Lett.98(7), 071102 (2011).
[CrossRef]

Kim, S. H.

Kim, S. K.

Kim, S. S.

S. Choi, H. J. Kim, S. S. Kim, J. Liu, J. Kim, J. H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett.96(22), 221105 (2010).
[CrossRef]

Kong, Q. F.

Kumnorkaew, P.

X. H. Li, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photonics J.3(3), 489–499 (2011).
[CrossRef]

Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, H. Zhao, J. F. Gilchrist, and N. Tansu, “Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses,” IEEE J. Sel. Top. Quantum Electron.15(4), 1218–1225 (2009).
[CrossRef]

Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures,” Opt. Express17(16), 13747–13757 (2009).
[CrossRef] [PubMed]

Y. K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, and J. F. Gilchrist, “Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays,” Appl. Phys. Lett.91(22), 221107 (2007).
[CrossRef]

Kuo, H. C.

P. Yu, C. H. Chang, C. H. Chiu, C. S. Yang, J. C. Yu, H. C. Kuo, S. H. Hsu, and Y. C. Chang, “Efficiency enhancement of GaAs photovoltaics employing indium-tin-oxide nano-columns,” Adv. Mater. (Deerfield Beach Fla.)21(16), 1618–1621 (2009).
[CrossRef]

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett.95(4), 041109 (2009).
[CrossRef]

C. H. Chiu, P. Yu, C. H. Chang, C. S. Yang, M. H. Hsu, H. C. Kuo, and M. A. Tsai, “Oblique electron-beam evaporation of distinctive indium-tin-oxide nanorods for enhanced light extraction from InGaN/GaN light emitting diodes,” Opt. Express17(23), 21250–21256 (2009).
[CrossRef] [PubMed]

Lai, Y. L.

C. H. Lu, C. C. Lan, Y. L. Lai, Y. L. Li, and C. P. Liu, “Enhancement of green emission from InGaN/GaN multiple quantum wells via coupling to surface plasmons in a two-dimensional silver array,” Adv. Funct. Mater.21(24), 4719–4723 (2011).
[CrossRef]

Lan, C. C.

C. H. Lu, C. C. Lan, Y. L. Lai, Y. L. Li, and C. P. Liu, “Enhancement of green emission from InGaN/GaN multiple quantum wells via coupling to surface plasmons in a two-dimensional silver array,” Adv. Funct. Mater.21(24), 4719–4723 (2011).
[CrossRef]

Lee, B.

Lee, H.

Lee, J. S.

Lee, K.

Lee, K. D.

Lee, M. K.

M. K. Lee, C. L. Ho, C. C. Lin, N. R. Cheng, M. H. Houng, Y. K. Chien, and C. F. Yen, “Light extraction efficiency enhancement of GaN blue LED with ZnO nanotips prepared by aqueous solution deposition,” J. Electrochem. Soc.158(5), D286–D289 (2011).
[CrossRef]

Lee, W.

S. Chhajed, W. Lee, J. Cho, E. F. Schubert, and J. K. Kim, “Strong light extraction enhancement in GaInN light-emitting diodes by using self-organized nanoscale patterning of p-type GaN,” Appl. Phys. Lett.98(7), 071102 (2011).
[CrossRef]

Lee, Y. H.

Leys, M.

L. Zhang, K. Cheng, H. Liang, R. Lieten, M. Leys, and G. Borghs, “Photoluminescence studies of polarization effects in InGaN/(In)GaN multiple quantum well structures,” Jpn. J. Appl. Phys.51, 030207 (2012).
[CrossRef]

Li, J.

Li, J. M.

Li, X. H.

X. H. Li, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photonics J.3(3), 489–499 (2011).
[CrossRef]

Y. K. Ee, X. H. Li, J. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire,” J. Cryst. Growth312(8), 1311–1315 (2010).
[CrossRef]

Li, Y.

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned Sapphire,” Appl. Phys. Lett.98(15), 151102 (2011).
[CrossRef]

Li, Y. L.

C. H. Lu, C. C. Lan, Y. L. Lai, Y. L. Li, and C. P. Liu, “Enhancement of green emission from InGaN/GaN multiple quantum wells via coupling to surface plasmons in a two-dimensional silver array,” Adv. Funct. Mater.21(24), 4719–4723 (2011).
[CrossRef]

Liang, H.

L. Zhang, K. Cheng, H. Liang, R. Lieten, M. Leys, and G. Borghs, “Photoluminescence studies of polarization effects in InGaN/(In)GaN multiple quantum well structures,” Jpn. J. Appl. Phys.51, 030207 (2012).
[CrossRef]

Liao, Y. X.

Lieten, R.

L. Zhang, K. Cheng, H. Liang, R. Lieten, M. Leys, and G. Borghs, “Photoluminescence studies of polarization effects in InGaN/(In)GaN multiple quantum well structures,” Jpn. J. Appl. Phys.51, 030207 (2012).
[CrossRef]

Lin, C. C.

M. K. Lee, C. L. Ho, C. C. Lin, N. R. Cheng, M. H. Houng, Y. K. Chien, and C. F. Yen, “Light extraction efficiency enhancement of GaN blue LED with ZnO nanotips prepared by aqueous solution deposition,” J. Electrochem. Soc.158(5), D286–D289 (2011).
[CrossRef]

Lin, C. F.

C. C. Yang, C. F. Lin, C. M. Lin, C. C. Chang, K. T. Chen, J. F. Chien, and C. Y. Chang, “Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces,” Appl. Phys. Lett.93(20), 203103 (2008).
[CrossRef]

Lin, C. M.

C. C. Yang, C. F. Lin, C. M. Lin, C. C. Chang, K. T. Chen, J. F. Chien, and C. Y. Chang, “Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces,” Appl. Phys. Lett.93(20), 203103 (2008).
[CrossRef]

Lin, M. C.

Z. L. Hsieh, M. C. Lin, and J. Y. Uan, “Rapid direct growth of Li–Al layered double hydroxide (LDH) film on glass, silicon wafer and carbon cloth and characterization of LDH film on substrates,” J. Mater. Chem.21(6), 1880 (2011).
[CrossRef]

Lin, V. K.

C. B. Soh, B. Wang, S. J. Chua, V. K. Lin, R. J. Tan, and S. Tripathy, “Fabrication of a nano-cone array on a p-GaN surface for enhanced light extraction efficiency from GaN-based tunable wavelength LEDs,” Nanotechnology19(40), 405303 (2008).
[CrossRef] [PubMed]

Liu, C. P.

C. H. Lu, C. C. Lan, Y. L. Lai, Y. L. Li, and C. P. Liu, “Enhancement of green emission from InGaN/GaN multiple quantum wells via coupling to surface plasmons in a two-dimensional silver array,” Adv. Funct. Mater.21(24), 4719–4723 (2011).
[CrossRef]

Liu, G.

H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98(15), 151115 (2011).
[CrossRef]

H. Zhao, G. Liu, R. A. Arif, and N. Tansu, “Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes,” Solid-State Electron.54(10), 1119–1124 (2010).
[CrossRef]

Liu, G. Y.

Liu, J.

S. Choi, H. J. Kim, S. S. Kim, J. Liu, J. Kim, J. H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett.96(22), 221105 (2010).
[CrossRef]

Lo, M. H.

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett.95(4), 041109 (2009).
[CrossRef]

Lu, C. H.

C. H. Lu, C. C. Lan, Y. L. Lai, Y. L. Li, and C. P. Liu, “Enhancement of green emission from InGaN/GaN multiple quantum wells via coupling to surface plasmons in a two-dimensional silver array,” Adv. Funct. Mater.21(24), 4719–4723 (2011).
[CrossRef]

McGroddy, K.

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett.88(6), 061124 (2006).
[CrossRef]

Moran, B.

A. David, T. Fujii, B. Moran, S. Nakamura, S. P. DenBaars, C. Weisbuch, and H. Benisty, “Photonic crystal laser lift-off GaN light-emitting diodes,” Appl. Phys. Lett.88(13), 133514 (2006).
[CrossRef]

Na, M. G.

H. G. Kim, M. G. Na, H. K. Kim, H. Y. Kim, J. H. Ryu, T. V. Cuong, and C.-H. Hong, “Effect of periodic deflector embedded in InGaN/GaN light emitting diode,” Appl. Phys. Lett.90(26), 261117 (2007).
[CrossRef]

Nakamura, S.

J. Jewell, D. Simeonov, S. C. Huang, Y. L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett.100(17), 171105 (2012).
[CrossRef]

A. David, T. Fujii, B. Moran, S. Nakamura, S. P. DenBaars, C. Weisbuch, and H. Benisty, “Photonic crystal laser lift-off GaN light-emitting diodes,” Appl. Phys. Lett.88(13), 133514 (2006).
[CrossRef]

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett.88(6), 061124 (2006).
[CrossRef]

Ohuchi, Y.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys.40(Part 2, 6B), L583–L585 (2001).
[CrossRef]

Okagawa, H.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys.40(Part 2, 6B), L583–L585 (2001).
[CrossRef]

Park, H.

Park, Y.

H. Kim, J. Cho, Y. Park, and T. Y. Seong, “Leakage current origins and passivation effect of GaN-based light emitting diodes fabricated with Ag p-contacts,” Appl. Phys. Lett.92(9), 092115 (2008).
[CrossRef]

Park, Y. J.

Ponce, F. A.

S. Choi, H. J. Kim, S. S. Kim, J. Liu, J. Kim, J. H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett.96(22), 221105 (2010).
[CrossRef]

Poplawsky, J. D.

Ryou, J. H.

S. Choi, H. J. Kim, S. S. Kim, J. Liu, J. Kim, J. H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett.96(22), 221105 (2010).
[CrossRef]

Ryu, J. H.

J. H. Kang, J. H. Ryu, H. K. Kim, H. Y. Kim, N. Han, Y. J. Park, P. Uthirakumar, and C.-H. Hong, “Comparison of various surface textured layer in InGaN LEDs for high light extraction efficiency,” Opt. Express19(4), 3637–3647 (2011).
[CrossRef] [PubMed]

H. G. Kim, M. G. Na, H. K. Kim, H. Y. Kim, J. H. Ryu, T. V. Cuong, and C.-H. Hong, “Effect of periodic deflector embedded in InGaN/GaN light emitting diode,” Appl. Phys. Lett.90(26), 261117 (2007).
[CrossRef]

Schubert, E. F.

S. Chhajed, W. Lee, J. Cho, E. F. Schubert, and J. K. Kim, “Strong light extraction enhancement in GaInN light-emitting diodes by using self-organized nanoscale patterning of p-type GaN,” Appl. Phys. Lett.98(7), 071102 (2011).
[CrossRef]

Seong, T. Y.

H. Kim, J. Cho, Y. Park, and T. Y. Seong, “Leakage current origins and passivation effect of GaN-based light emitting diodes fabricated with Ag p-contacts,” Appl. Phys. Lett.92(9), 092115 (2008).
[CrossRef]

Sharma, R.

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett.88(6), 061124 (2006).
[CrossRef]

Simeonov, D.

J. Jewell, D. Simeonov, S. C. Huang, Y. L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett.100(17), 171105 (2012).
[CrossRef]

Soh, C. B.

C. B. Soh, B. Wang, S. J. Chua, V. K. Lin, R. J. Tan, and S. Tripathy, “Fabrication of a nano-cone array on a p-GaN surface for enhanced light extraction efficiency from GaN-based tunable wavelength LEDs,” Nanotechnology19(40), 405303 (2008).
[CrossRef] [PubMed]

Song, R.

X. H. Li, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photonics J.3(3), 489–499 (2011).
[CrossRef]

Speck, J.

J. Jewell, D. Simeonov, S. C. Huang, Y. L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett.100(17), 171105 (2012).
[CrossRef]

Tadatomo, K.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys.40(Part 2, 6B), L583–L585 (2001).
[CrossRef]

Taguchi, T.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys.40(Part 2, 6B), L583–L585 (2001).
[CrossRef]

Tamura, N.

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned Sapphire,” Appl. Phys. Lett.98(15), 151102 (2011).
[CrossRef]

Tan, R. J.

C. B. Soh, B. Wang, S. J. Chua, V. K. Lin, R. J. Tan, and S. Tripathy, “Fabrication of a nano-cone array on a p-GaN surface for enhanced light extraction efficiency from GaN-based tunable wavelength LEDs,” Nanotechnology19(40), 405303 (2008).
[CrossRef] [PubMed]

Tanaka, S.

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned Sapphire,” Appl. Phys. Lett.98(15), 151102 (2011).
[CrossRef]

Taniguchi, Y.

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned Sapphire,” Appl. Phys. Lett.98(15), 151102 (2011).
[CrossRef]

Tansu, N.

J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys.110(11), 113110 (2011).
[CrossRef]

H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98(15), 151115 (2011).
[CrossRef]

X. H. Li, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photonics J.3(3), 489–499 (2011).
[CrossRef]

H. P. Zhao, G. Y. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGan light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011).
[CrossRef] [PubMed]

H. Zhao, G. Liu, R. A. Arif, and N. Tansu, “Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes,” Solid-State Electron.54(10), 1119–1124 (2010).
[CrossRef]

Y. K. Ee, X. H. Li, J. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire,” J. Cryst. Growth312(8), 1311–1315 (2010).
[CrossRef]

Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures,” Opt. Express17(16), 13747–13757 (2009).
[CrossRef] [PubMed]

Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, H. Zhao, J. F. Gilchrist, and N. Tansu, “Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses,” IEEE J. Sel. Top. Quantum Electron.15(4), 1218–1225 (2009).
[CrossRef]

Y. K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, and J. F. Gilchrist, “Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays,” Appl. Phys. Lett.91(22), 221107 (2007).
[CrossRef]

Tong, H.

Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, H. Zhao, J. F. Gilchrist, and N. Tansu, “Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses,” IEEE J. Sel. Top. Quantum Electron.15(4), 1218–1225 (2009).
[CrossRef]

Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures,” Opt. Express17(16), 13747–13757 (2009).
[CrossRef] [PubMed]

Tripathy, S.

C. B. Soh, B. Wang, S. J. Chua, V. K. Lin, R. J. Tan, and S. Tripathy, “Fabrication of a nano-cone array on a p-GaN surface for enhanced light extraction efficiency from GaN-based tunable wavelength LEDs,” Nanotechnology19(40), 405303 (2008).
[CrossRef] [PubMed]

Tsai, M. A.

Tsunekawa, T.

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys.40(Part 2, 6B), L583–L585 (2001).
[CrossRef]

Tu, P. M.

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett.95(4), 041109 (2009).
[CrossRef]

Uan, J. Y.

Z. L. Hsieh, M. C. Lin, and J. Y. Uan, “Rapid direct growth of Li–Al layered double hydroxide (LDH) film on glass, silicon wafer and carbon cloth and characterization of LDH film on substrates,” J. Mater. Chem.21(6), 1880 (2011).
[CrossRef]

Uthirakumar, P.

Vinci, R. P.

Y. K. Ee, X. H. Li, J. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire,” J. Cryst. Growth312(8), 1311–1315 (2010).
[CrossRef]

Wang, B.

C. B. Soh, B. Wang, S. J. Chua, V. K. Lin, R. J. Tan, and S. Tripathy, “Fabrication of a nano-cone array on a p-GaN surface for enhanced light extraction efficiency from GaN-based tunable wavelength LEDs,” Nanotechnology19(40), 405303 (2008).
[CrossRef] [PubMed]

Wang, C. H.

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett.95(4), 041109 (2009).
[CrossRef]

Wang, G. H.

Wang, J. X.

Wang, S. C.

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett.95(4), 041109 (2009).
[CrossRef]

Wei, T. B.

Weisbuch, C.

J. Jewell, D. Simeonov, S. C. Huang, Y. L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett.100(17), 171105 (2012).
[CrossRef]

A. David, T. Fujii, B. Moran, S. Nakamura, S. P. DenBaars, C. Weisbuch, and H. Benisty, “Photonic crystal laser lift-off GaN light-emitting diodes,” Appl. Phys. Lett.88(13), 133514 (2006).
[CrossRef]

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett.88(6), 061124 (2006).
[CrossRef]

Wetzel, C.

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned Sapphire,” Appl. Phys. Lett.98(15), 151102 (2011).
[CrossRef]

Yang, C. C.

C. C. Yang, C. F. Lin, C. M. Lin, C. C. Chang, K. T. Chen, J. F. Chien, and C. Y. Chang, “Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces,” Appl. Phys. Lett.93(20), 203103 (2008).
[CrossRef]

Yang, C. S.

P. Yu, C. H. Chang, C. H. Chiu, C. S. Yang, J. C. Yu, H. C. Kuo, S. H. Hsu, and Y. C. Chang, “Efficiency enhancement of GaAs photovoltaics employing indium-tin-oxide nano-columns,” Adv. Mater. (Deerfield Beach Fla.)21(16), 1618–1621 (2009).
[CrossRef]

C. H. Chiu, P. Yu, C. H. Chang, C. S. Yang, M. H. Hsu, H. C. Kuo, and M. A. Tsai, “Oblique electron-beam evaporation of distinctive indium-tin-oxide nanorods for enhanced light extraction from InGaN/GaN light emitting diodes,” Opt. Express17(23), 21250–21256 (2009).
[CrossRef] [PubMed]

Yen, C. F.

M. K. Lee, C. L. Ho, C. C. Lin, N. R. Cheng, M. H. Houng, Y. K. Chien, and C. F. Yen, “Light extraction efficiency enhancement of GaN blue LED with ZnO nanotips prepared by aqueous solution deposition,” J. Electrochem. Soc.158(5), D286–D289 (2011).
[CrossRef]

Yi, F. T.

You, S.

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned Sapphire,” Appl. Phys. Lett.98(15), 151102 (2011).
[CrossRef]

Yu, J. C.

P. Yu, C. H. Chang, C. H. Chiu, C. S. Yang, J. C. Yu, H. C. Kuo, S. H. Hsu, and Y. C. Chang, “Efficiency enhancement of GaAs photovoltaics employing indium-tin-oxide nano-columns,” Adv. Mater. (Deerfield Beach Fla.)21(16), 1618–1621 (2009).
[CrossRef]

Yu, P.

P. Yu, C. H. Chang, C. H. Chiu, C. S. Yang, J. C. Yu, H. C. Kuo, S. H. Hsu, and Y. C. Chang, “Efficiency enhancement of GaAs photovoltaics employing indium-tin-oxide nano-columns,” Adv. Mater. (Deerfield Beach Fla.)21(16), 1618–1621 (2009).
[CrossRef]

C. H. Chiu, P. Yu, C. H. Chang, C. S. Yang, M. H. Hsu, H. C. Kuo, and M. A. Tsai, “Oblique electron-beam evaporation of distinctive indium-tin-oxide nanorods for enhanced light extraction from InGaN/GaN light emitting diodes,” Opt. Express17(23), 21250–21256 (2009).
[CrossRef] [PubMed]

Zan, H. W.

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett.95(4), 041109 (2009).
[CrossRef]

Zeng, Y. P.

Zhang, J.

H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98(15), 151115 (2011).
[CrossRef]

J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys.110(11), 113110 (2011).
[CrossRef]

H. P. Zhao, G. Y. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGan light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011).
[CrossRef] [PubMed]

Zhang, L.

L. Zhang, K. Cheng, H. Liang, R. Lieten, M. Leys, and G. Borghs, “Photoluminescence studies of polarization effects in InGaN/(In)GaN multiple quantum well structures,” Jpn. J. Appl. Phys.51, 030207 (2012).
[CrossRef]

Zhao, H.

H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98(15), 151115 (2011).
[CrossRef]

H. Zhao, G. Liu, R. A. Arif, and N. Tansu, “Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes,” Solid-State Electron.54(10), 1119–1124 (2010).
[CrossRef]

Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, H. Zhao, J. F. Gilchrist, and N. Tansu, “Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses,” IEEE J. Sel. Top. Quantum Electron.15(4), 1218–1225 (2009).
[CrossRef]

Zhao, H. P.

Zhao, L.

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned Sapphire,” Appl. Phys. Lett.98(15), 151102 (2011).
[CrossRef]

Zhu, M.

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned Sapphire,” Appl. Phys. Lett.98(15), 151102 (2011).
[CrossRef]

Adv. Funct. Mater. (1)

C. H. Lu, C. C. Lan, Y. L. Lai, Y. L. Li, and C. P. Liu, “Enhancement of green emission from InGaN/GaN multiple quantum wells via coupling to surface plasmons in a two-dimensional silver array,” Adv. Funct. Mater.21(24), 4719–4723 (2011).
[CrossRef]

Adv. Mater. (Deerfield Beach Fla.) (1)

P. Yu, C. H. Chang, C. H. Chiu, C. S. Yang, J. C. Yu, H. C. Kuo, S. H. Hsu, and Y. C. Chang, “Efficiency enhancement of GaAs photovoltaics employing indium-tin-oxide nano-columns,” Adv. Mater. (Deerfield Beach Fla.)21(16), 1618–1621 (2009).
[CrossRef]

Appl. Phys. Lett. (12)

H. G. Kim, M. G. Na, H. K. Kim, H. Y. Kim, J. H. Ryu, T. V. Cuong, and C.-H. Hong, “Effect of periodic deflector embedded in InGaN/GaN light emitting diode,” Appl. Phys. Lett.90(26), 261117 (2007).
[CrossRef]

C. C. Yang, C. F. Lin, C. M. Lin, C. C. Chang, K. T. Chen, J. F. Chien, and C. Y. Chang, “Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces,” Appl. Phys. Lett.93(20), 203103 (2008).
[CrossRef]

S. Choi, H. J. Kim, S. S. Kim, J. Liu, J. Kim, J. H. Ryou, R. D. Dupuis, A. M. Fischer, and F. A. Ponce, “Improvement of peak quantum efficiency and efficiency droop in III-nitride visible light-emitting diodes with an InAlN electron-blocking layer,” Appl. Phys. Lett.96(22), 221105 (2010).
[CrossRef]

H. Zhao, J. Zhang, G. Liu, and N. Tansu, “Surface plasmon dispersion engineering via double-metallic Au/Ag layers for III-nitride based light-emitting diodes,” Appl. Phys. Lett.98(15), 151115 (2011).
[CrossRef]

M. H. Lo, P. M. Tu, C. H. Wang, C. W. Hung, S. C. Hsu, Y. J. Cheng, H. C. Kuo, H. W. Zan, S. C. Wang, C. Y. Chang, and S. C. Huang, “High efficiency light emitting diode with anisotropically etched GaN-sapphire interface,” Appl. Phys. Lett.95(4), 041109 (2009).
[CrossRef]

J. Jewell, D. Simeonov, S. C. Huang, Y. L. Hu, S. Nakamura, J. Speck, and C. Weisbuch, “Double embedded photonic crystals for extraction of guided light in light-emitting diodes,” Appl. Phys. Lett.100(17), 171105 (2012).
[CrossRef]

Y. K. Ee, R. A. Arif, N. Tansu, P. Kumnorkaew, and J. F. Gilchrist, “Enhancement of light extraction efficiency of InGaN quantum wells light emitting diodes using SiO2/polystyrene microlens arrays,” Appl. Phys. Lett.91(22), 221107 (2007).
[CrossRef]

S. Chhajed, W. Lee, J. Cho, E. F. Schubert, and J. K. Kim, “Strong light extraction enhancement in GaInN light-emitting diodes by using self-organized nanoscale patterning of p-type GaN,” Appl. Phys. Lett.98(7), 071102 (2011).
[CrossRef]

Y. Li, S. You, M. Zhu, L. Zhao, W. Hou, T. Detchprohm, Y. Taniguchi, N. Tamura, S. Tanaka, and C. Wetzel, “Defect-reduced green GaInN/GaN light-emitting diode on nanopatterned Sapphire,” Appl. Phys. Lett.98(15), 151102 (2011).
[CrossRef]

A. David, T. Fujii, B. Moran, S. Nakamura, S. P. DenBaars, C. Weisbuch, and H. Benisty, “Photonic crystal laser lift-off GaN light-emitting diodes,” Appl. Phys. Lett.88(13), 133514 (2006).
[CrossRef]

A. David, T. Fujii, R. Sharma, K. McGroddy, S. Nakamura, S. P. DenBaars, E. L. Hu, C. Weisbuch, and H. Benisty, “Photonic-crystal GaN light-emitting diodes with tailored guided modes distribution,” Appl. Phys. Lett.88(6), 061124 (2006).
[CrossRef]

H. Kim, J. Cho, Y. Park, and T. Y. Seong, “Leakage current origins and passivation effect of GaN-based light emitting diodes fabricated with Ag p-contacts,” Appl. Phys. Lett.92(9), 092115 (2008).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (1)

Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, H. Zhao, J. F. Gilchrist, and N. Tansu, “Optimization of light extraction efficiency of III-nitride LEDs with self-assembled colloidal-based microlenses,” IEEE J. Sel. Top. Quantum Electron.15(4), 1218–1225 (2009).
[CrossRef]

IEEE Photonics J. (1)

X. H. Li, R. Song, Y.-K. Ee, P. Kumnorkaew, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency and radiation patterns of III-nitride light-emitting diodes with colloidal microlens arrays with various aspect ratios,” IEEE Photonics J.3(3), 489–499 (2011).
[CrossRef]

J. Appl. Phys. (1)

J. Zhang and N. Tansu, “Improvement in spontaneous emission rates for InGaN quantum wells on ternary InGaN substrate for light-emitting diodes,” J. Appl. Phys.110(11), 113110 (2011).
[CrossRef]

J. Cryst. Growth (1)

Y. K. Ee, X. H. Li, J. Biser, W. Cao, H. M. Chan, R. P. Vinci, and N. Tansu, “Abbreviated MOVPE nucleation of III-nitride light-emitting diodes on nano-patterned sapphire,” J. Cryst. Growth312(8), 1311–1315 (2010).
[CrossRef]

J. Electrochem. Soc. (1)

M. K. Lee, C. L. Ho, C. C. Lin, N. R. Cheng, M. H. Houng, Y. K. Chien, and C. F. Yen, “Light extraction efficiency enhancement of GaN blue LED with ZnO nanotips prepared by aqueous solution deposition,” J. Electrochem. Soc.158(5), D286–D289 (2011).
[CrossRef]

J. Mater. Chem. (1)

Z. L. Hsieh, M. C. Lin, and J. Y. Uan, “Rapid direct growth of Li–Al layered double hydroxide (LDH) film on glass, silicon wafer and carbon cloth and characterization of LDH film on substrates,” J. Mater. Chem.21(6), 1880 (2011).
[CrossRef]

Jpn. J. Appl. Phys. (2)

K. Tadatomo, H. Okagawa, Y. Ohuchi, T. Tsunekawa, Y. Imada, M. Kato, and T. Taguchi, “High output power InGaN ultraviolet light-emitting diodes fabricated on patterned substrates using metalorganic vapor phase epitaxy,” Jpn. J. Appl. Phys.40(Part 2, 6B), L583–L585 (2001).
[CrossRef]

L. Zhang, K. Cheng, H. Liang, R. Lieten, M. Leys, and G. Borghs, “Photoluminescence studies of polarization effects in InGaN/(In)GaN multiple quantum well structures,” Jpn. J. Appl. Phys.51, 030207 (2012).
[CrossRef]

Nanotechnology (1)

C. B. Soh, B. Wang, S. J. Chua, V. K. Lin, R. J. Tan, and S. Tripathy, “Fabrication of a nano-cone array on a p-GaN surface for enhanced light extraction efficiency from GaN-based tunable wavelength LEDs,” Nanotechnology19(40), 405303 (2008).
[CrossRef] [PubMed]

Opt. Express (7)

H. K. Cho, J. Jang, J. H. Choi, J. Choi, J. Kim, J. S. Lee, B. Lee, Y. H. Choe, K. D. Lee, S. H. Kim, K. Lee, S. K. Kim, and Y. H. Lee, “Light extraction enhancement from nano-imprinted photonic crystal GaN-based blue light-emitting diodes,” Opt. Express14(19), 8654–8660 (2006).
[CrossRef] [PubMed]

Y. K. Ee, P. Kumnorkaew, R. A. Arif, H. Tong, J. F. Gilchrist, and N. Tansu, “Light extraction efficiency enhancement of InGaN quantum wells light-emitting diodes with polydimethylsiloxane concave microstructures,” Opt. Express17(16), 13747–13757 (2009).
[CrossRef] [PubMed]

C. H. Chiu, P. Yu, C. H. Chang, C. S. Yang, M. H. Hsu, H. C. Kuo, and M. A. Tsai, “Oblique electron-beam evaporation of distinctive indium-tin-oxide nanorods for enhanced light extraction from InGaN/GaN light emitting diodes,” Opt. Express17(23), 21250–21256 (2009).
[CrossRef] [PubMed]

T. B. Wei, Q. F. Kong, J. X. Wang, J. Li, Y. P. Zeng, G. H. Wang, J. M. Li, Y. X. Liao, and F. T. Yi, “Improving light extraction of InGaN-based light emitting diodes with a roughened p-GaN surface using CsCl nano-islands,” Opt. Express19(2), 1065–1071 (2011).
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J. H. Kang, J. H. Ryu, H. K. Kim, H. Y. Kim, N. Han, Y. J. Park, P. Uthirakumar, and C.-H. Hong, “Comparison of various surface textured layer in InGaN LEDs for high light extraction efficiency,” Opt. Express19(4), 3637–3647 (2011).
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H. P. Zhao, G. Y. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGan light-emitting diodes with large overlap quantum wells,” Opt. Express19(S4Suppl 4), A991–A1007 (2011).
[CrossRef] [PubMed]

K. J. Byeon, J. Y. Cho, J. Kim, H. Park, and H. Lee, “Fabrication of SiNx-based photonic crystals on GaN-based LED devices with patterned sapphire substrate by nanoimprint lithography,” Opt. Express20(10), 11423–11432 (2012).
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Solid-State Electron. (1)

H. Zhao, G. Liu, R. A. Arif, and N. Tansu, “Current injection efficiency induced efficiency-droop in InGaN quantum well light-emitting diodes,” Solid-State Electron.54(10), 1119–1124 (2010).
[CrossRef]

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Figures (7)

Fig. 1
Fig. 1

The schematic of the LDH-LED structure with a textured Li-Al LDH structure is shown.

Fig. 2
Fig. 2

The SEM micrographs of (a)(c) the ST-LED and (b)(d) the LDH-LED structures were observed. (e)(f) Larger magnification SEM micrographs of the Li-Al LDH structure were observed as the platelet structures.

Fig. 3
Fig. 3

(a) The current-voltage (I-V) characteristics and the light-output power as a function of the operating current are measured. (b) The reverse leakage currents of both LED structure are measured at −5V bias voltage.

Fig. 4
Fig. 4

The (a)(b) low magnification and (c)(d) large magnification light-intensity profiles of the ST-LED and LDH-LED structures were analyzed by a beam profiler at a 20 mA operating current. (e) The line intensity profile of both LED structures were measured from the ICP-etched GaN:Si region to mesa region labeled in the (c)(d). The scale bar for the light intensity profile was labeled.

Fig. 5
Fig. 5

(a) The PL spectra of both LED structure were measured at the normal and the lateral directions. (b) Far-field radiation patterns of all LED samples were analyzed by the divergent angle measurements.

Fig. 6
Fig. 6

(a) Reflectance spectra of the thick and thin Li-Al LDH layers on the glass substrates were measured. (b) The transmittance and reflectance spectra of the GaN epitaxial layer with and without Li-Al LDH layer were analyzed.

Fig. 7
Fig. 7

The wavelength-resolved angular far-field patterns of the PL spectra of both LED structures were measured.

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