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[Crossref]
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[Crossref]
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D. Ahn, C. Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
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C. O. Cui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, “Activation and diffusion studies of ion-implanted p and n dopants in germanium,” Appl. Phys. Lett. 83(16), 3275–3277 (2003).
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D. Ahn, C. Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
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[Crossref]
H. Ando, H. Kanbe, T. Kimura, T. Yamaoka, and T. Kaneda, “Characteristics of germanium avalanche photodiodes in the wavelength region of 1-1.6 μm,” IEEE J. Quantum Electron. 14(11), 804–809 (1978).
[Crossref]
D. Ahn, C. Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref]
[PubMed]
S. Luryi, A. Kastalsky, and J. C. Bean, “New infrared detector on a silicon chip,” IEEE Trans. Electron. Dev. 31(9), 1135–1139 (1984).
[Crossref]
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[Crossref]
J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photonics 4(8), 527–534 (2010).
[Crossref]
M. Beals, J. Michel, J. F. Liu, D. H. Ahn, D. Sparacin, R. Sun, C. Y. Hong, L. C. Kimerling, A. Pomerene, D. Carothers, J. Beattie, A. Kopa, A. Apsel, M. S. Rasras, D. M. Gill, S. S. Patel, K. Y. Tu, Y. K. Chen, and A. E. White, “Process flow innovations for photonic device integration in CMOS,” Proc. SPIE 6898, 689804(2008).
[Crossref]
D. Ahn, C. Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref]
[PubMed]
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[Crossref]
H. Ando, H. Kanbe, T. Kimura, T. Yamaoka, and T. Kaneda, “Characteristics of germanium avalanche photodiodes in the wavelength region of 1-1.6 μm,” IEEE J. Quantum Electron. 14(11), 804–809 (1978).
[Crossref]
S. J. Koester, J. D. Schaub, G. Dehlinger, and J. O. Chu, “Germanium-on-SOI infrared detectors for integrated photonic applications,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1489–1502 (2006).
[Crossref]
M. Beals, J. Michel, J. F. Liu, D. H. Ahn, D. Sparacin, R. Sun, C. Y. Hong, L. C. Kimerling, A. Pomerene, D. Carothers, J. Beattie, A. Kopa, A. Apsel, M. S. Rasras, D. M. Gill, S. S. Patel, K. Y. Tu, Y. K. Chen, and A. E. White, “Process flow innovations for photonic device integration in CMOS,” Proc. SPIE 6898, 689804(2008).
[Crossref]
O. Fidaner, A. K. Okyay, J. E. Roth, R. K. Schaevitz, Y.-H. Kuo, K. C. Saraswat, J. S. Harris, and D. A. B. Miller, “Ge–SiGe quantum-well waveguide photodetectors on silicon for the near-infrared,” IEEE Photon. Technol. Lett. 19(20), 1631–1633 (2007).
[Crossref]
K. W. Ang, T. Y. Liow, M. B. Yu, Q. Fang, J. Song, G. Q. Lo, and D. L. Kwong, “Low thermal budget monolithic integration of evanescent-coupled Ge-on-SOI photodetector on Si CMOS platform,” IEEE J. Sel. Top. Quantum Electron. 16(1), 106–113 (2010).
[Crossref]
T. H. Loh, H. S. Nguyen, R. Murthy, M. B. Yu, W. Y. Loh, G. Q. Lo, N. Balasubramanian, D. L. Kwong, J. Wang, and S. J. Lee, “Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer,” Appl. Phys. Lett. 91(7), 073503 (2007).
[Crossref]
S. B. Samavedam, M. T. Currie, T. A. Langdo, and E. A. Fitzgerald, “High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers,” Appl. Phys. Lett. 73(15), 2125–2127 (1998).
[Crossref]
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[Crossref]
M. D. Jack and J. Y. M. Lee, “DLTS measurements of a germanium MIS interface,” J. Electron. Mater. 10(3), 571–589 (1981).
[Crossref]
H. C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]
T. H. Loh, H. S. Nguyen, R. Murthy, M. B. Yu, W. Y. Loh, G. Q. Lo, N. Balasubramanian, D. L. Kwong, J. Wang, and S. J. Lee, “Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer,” Appl. Phys. Lett. 91(7), 073503 (2007).
[Crossref]
H. C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]
N. D. Nguyen, E. Rosseel, S. Takeuchi, J. L. Everaert, L. Yang, J. Goossens, A. Moussa, T. Clarysse, O. Richard, H. Bender, S. Zaima, A. Sakai, R. Loo, J. C. Lin, W. Vandervorst, and M. Caymax, “Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology,” Thin Solid Films 518(6), S48–S52 (2010).
[Crossref]
K. W. Ang, T. Y. Liow, M. B. Yu, Q. Fang, J. Song, G. Q. Lo, and D. L. Kwong, “Low thermal budget monolithic integration of evanescent-coupled Ge-on-SOI photodetector on Si CMOS platform,” IEEE J. Sel. Top. Quantum Electron. 16(1), 106–113 (2010).
[Crossref]
J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photonics 4(8), 527–534 (2010).
[Crossref]
D. Ahn, C. Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref]
[PubMed]
M. Beals, J. Michel, J. F. Liu, D. H. Ahn, D. Sparacin, R. Sun, C. Y. Hong, L. C. Kimerling, A. Pomerene, D. Carothers, J. Beattie, A. Kopa, A. Apsel, M. S. Rasras, D. M. Gill, S. S. Patel, K. Y. Tu, Y. K. Chen, and A. E. White, “Process flow innovations for photonic device integration in CMOS,” Proc. SPIE 6898, 689804(2008).
[Crossref]
K. W. Ang, T. Y. Liow, M. B. Yu, Q. Fang, J. Song, G. Q. Lo, and D. L. Kwong, “Low thermal budget monolithic integration of evanescent-coupled Ge-on-SOI photodetector on Si CMOS platform,” IEEE J. Sel. Top. Quantum Electron. 16(1), 106–113 (2010).
[Crossref]
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