Dark current reduction of Ge photodetector by GeO₂ surface passivation and gas-phase doping

M. Takenaka, K. Morii, M. Sugiyama, Y. Nakano, and S. Takagi, “Gas phase doping of arsenic into (100), (110), and (111) germanium substrates using a metal–organic source,” Jpn. J. Appl. Phys. 50, 010105 (2011).
[Crossref]

Y. Nakakita, R. Nakakne, T. Sasada, M. Takenaka, and S. Takagi, “Interface-controlled self-align source/drain Ge p-channel metal–oxide–semiconductor field-effect transistors fabricated using thermally oxidized GeO2 interfacial layers,” Jpn. J. Appl. Phys. 50, 010109 (2011).
[Crossref]

J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photonics 4(8), 527–534 (2010).
[Crossref]

S. Park, T. Tsuchizawa, T. Watanabe, H. Shinojima, H. Nishi, K. Yamada, Y. Ishikawa, K. Wada, and S. Itabashi, “Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators,” Opt. Express 18(8), 8412–8421 (2010).
[Crossref] [PubMed]

K. W. Ang, T. Y. Liow, M. B. Yu, Q. Fang, J. Song, G. Q. Lo, and D. L. Kwong, “Low thermal budget monolithic integration of evanescent-coupled Ge-on-SOI photodetector on Si CMOS platform,” IEEE J. Sel. Top. Quantum Electron. 16(1), 106–113 (2010).
[Crossref]

S. Assefa, F. Xia, and Y. A. Vlasov, “Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects,” Nature 464(7285), 80–84 (2010).
[Crossref] [PubMed]

N. D. Nguyen, E. Rosseel, S. Takeuchi, J. L. Everaert, L. Yang, J. Goossens, A. Moussa, T. Clarysse, O. Richard, H. Bender, S. Zaima, A. Sakai, R. Loo, J. C. Lin, W. Vandervorst, and M. Caymax, “Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology,” Thin Solid Films 518(6), S48–S52 (2010).
[Crossref]

K. Morii, T. Iwasaki, R. Nakane, M. Takenaka, and S. Takagi, “High-performance GeO2/Ge nMOSFETs with source/drain junctions formed by gas-phase doping,” IEEE Electron Device Lett. 31(10), 1092–1094 (2010).
[Crossref]

T. Sasada, Y. Nakakita, M. Takenaka, and S. Takagi, “Surface orientation dependence of interface properties of GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation,” J. Appl. Phys. 106(7), 073716 (2009).
[Crossref]

J. Osmond, G. Isella, D. Chrastina, R. Kaufmann, M. Acciarri, and H. von Kanel, “Ultralow dark current Ge/Si(100) photodiodes with low thermal budget,” Appl. Phys. Lett. 94(20), 201106 (2009).
[Crossref]

H. Y. Yu, S. Ren, W. S. Jung, A. K. Okyay, D. A. B. Miller, and K. C. Saraswat, “High-efficiency p-i-n photodetectors on selective-area-grown Ge for monolithic integration,” IEEE Electron Device Lett. 30(11), 1161–1163 (2009).
[Crossref]

M. Beals, J. Michel, J. F. Liu, D. H. Ahn, D. Sparacin, R. Sun, C. Y. Hong, L. C. Kimerling, A. Pomerene, D. Carothers, J. Beattie, A. Kopa, A. Apsel, M. S. Rasras, D. M. Gill, S. S. Patel, K. Y. Tu, Y. K. Chen, and A. E. White, “Process flow innovations for photonic device integration in CMOS,” Proc. SPIE 6898, 689804(2008).
[Crossref]

H. Matsubara, T. Sasada, M. Takenaka, and S. Takagi, “Evidence of low interface trap density in GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation,” Appl. Phys. Lett. 93(3), 032104 (2008).
[Crossref]

O. Fidaner, A. K. Okyay, J. E. Roth, R. K. Schaevitz, Y.-H. Kuo, K. C. Saraswat, J. S. Harris, and D. A. B. Miller, “Ge–SiGe quantum-well waveguide photodetectors on silicon for the near-infrared,” IEEE Photon. Technol. Lett. 19(20), 1631–1633 (2007).
[Crossref]

T. H. Loh, H. S. Nguyen, R. Murthy, M. B. Yu, W. Y. Loh, G. Q. Lo, N. Balasubramanian, D. L. Kwong, J. Wang, and S. J. Lee, “Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer,” Appl. Phys. Lett. 91(7), 073503 (2007).
[Crossref]

L. Colace, P. Ferrara, G. Assanto, D. Fulgoni, and L. Nash, “Low dark-current germanium-on-silicon near-infrared detectors,” IEEE Photon. Technol. Lett. 19(22), 1813–1815 (2007).
[Crossref]

D. Ahn, C. Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref] [PubMed]

T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007).
[Crossref] [PubMed]

S. J. Koester, J. D. Schaub, G. Dehlinger, and J. O. Chu, “Germanium-on-SOI infrared detectors for integrated photonic applications,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1489–1502 (2006).
[Crossref]

C. O. Cui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, “Activation and diffusion studies of ion-implanted p and n dopants in germanium,” Appl. Phys. Lett. 83(16), 3275–3277 (2003).
[Crossref]

R. S. Johnson, H. Niimi, and G. Lucovsky, “New approach for the fabrication of device-quality Ge/GeO2 /SiO2 interfaces using low temperature remote plasma processing,” J. Vac. Sci. Technol. A 18(4), 1230–1233 (2000).
[Crossref]

V. Craciun, I. W. Boyd, B. Hutton, and D. Williams, “Characteristics of dielectric layers grown on Ge by low temperature vacuum ultraviolet-assisted oxidation,” Appl. Phys. Lett. 75(9), 1261–1263 (1999).
[Crossref]

H. C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]

S. B. Samavedam, M. T. Currie, T. A. Langdo, and E. A. Fitzgerald, “High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers,” Appl. Phys. Lett. 73(15), 2125–2127 (1998).
[Crossref]

Y. Wang, Y. Z. Hu, and E. A. Irene, “Electron cyclotron resonance plasma and thermal oxidation mechanisms of germanium,” J. Vac. Sci. Technol. A 12(4), 1309–1314 (1994).
[Crossref]

E. E. Crisman, J. I. Lee, P. J. Stiles, and O. J. Gregory, “Characterisation of n-channel germanium mosfet with gate insulator formed by high-pressure thermal oxidation,” Electron. Lett. 23(1), 8–10 (1987).
[Crossref]

S. Luryi, A. Kastalsky, and J. C. Bean, “New infrared detector on a silicon chip,” IEEE Trans. Electron. Dev. 31(9), 1135–1139 (1984).
[Crossref]

M. D. Jack and J. Y. M. Lee, “DLTS measurements of a germanium MIS interface,” J. Electron. Mater. 10(3), 571–589 (1981).
[Crossref]

S. Kagawa, T. Kaneda, T. Mikawa, Y. Banba, and Y. Toyama, “Fully ion-implanted p+ -n germanium avalanche photodiodes,” Appl. Phys. Lett. 38(6), 429–431 (1981).
[Crossref]

H. Ando, H. Kanbe, T. Kimura, T. Yamaoka, and T. Kaneda, “Characteristics of germanium avalanche photodiodes in the wavelength region of 1-1.6 μm,” IEEE J. Quantum Electron. 14(11), 804–809 (1978).
[Crossref]

J. Osmond, G. Isella, D. Chrastina, R. Kaufmann, M. Acciarri, and H. von Kanel, “Ultralow dark current Ge/Si(100) photodiodes with low thermal budget,” Appl. Phys. Lett. 94(20), 201106 (2009).
[Crossref]

D. Ahn, C. Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref] [PubMed]

M. Beals, J. Michel, J. F. Liu, D. H. Ahn, D. Sparacin, R. Sun, C. Y. Hong, L. C. Kimerling, A. Pomerene, D. Carothers, J. Beattie, A. Kopa, A. Apsel, M. S. Rasras, D. M. Gill, S. S. Patel, K. Y. Tu, Y. K. Chen, and A. E. White, “Process flow innovations for photonic device integration in CMOS,” Proc. SPIE 6898, 689804(2008).
[Crossref]

H. Ando, H. Kanbe, T. Kimura, T. Yamaoka, and T. Kaneda, “Characteristics of germanium avalanche photodiodes in the wavelength region of 1-1.6 μm,” IEEE J. Quantum Electron. 14(11), 804–809 (1978).
[Crossref]

K. W. Ang, T. Y. Liow, M. B. Yu, Q. Fang, J. Song, G. Q. Lo, and D. L. Kwong, “Low thermal budget monolithic integration of evanescent-coupled Ge-on-SOI photodetector on Si CMOS platform,” IEEE J. Sel. Top. Quantum Electron. 16(1), 106–113 (2010).
[Crossref]

M. Beals, J. Michel, J. F. Liu, D. H. Ahn, D. Sparacin, R. Sun, C. Y. Hong, L. C. Kimerling, A. Pomerene, D. Carothers, J. Beattie, A. Kopa, A. Apsel, M. S. Rasras, D. M. Gill, S. S. Patel, K. Y. Tu, Y. K. Chen, and A. E. White, “Process flow innovations for photonic device integration in CMOS,” Proc. SPIE 6898, 689804(2008).
[Crossref]

L. Colace, P. Ferrara, G. Assanto, D. Fulgoni, and L. Nash, “Low dark-current germanium-on-silicon near-infrared detectors,” IEEE Photon. Technol. Lett. 19(22), 1813–1815 (2007).
[Crossref]

S. Assefa, F. Xia, and Y. A. Vlasov, “Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects,” Nature 464(7285), 80–84 (2010).
[Crossref] [PubMed]

T. H. Loh, H. S. Nguyen, R. Murthy, M. B. Yu, W. Y. Loh, G. Q. Lo, N. Balasubramanian, D. L. Kwong, J. Wang, and S. J. Lee, “Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer,” Appl. Phys. Lett. 91(7), 073503 (2007).
[Crossref]

S. Kagawa, T. Kaneda, T. Mikawa, Y. Banba, and Y. Toyama, “Fully ion-implanted p+ -n germanium avalanche photodiodes,” Appl. Phys. Lett. 38(6), 429–431 (1981).
[Crossref]

M. Beals, J. Michel, J. F. Liu, D. H. Ahn, D. Sparacin, R. Sun, C. Y. Hong, L. C. Kimerling, A. Pomerene, D. Carothers, J. Beattie, A. Kopa, A. Apsel, M. S. Rasras, D. M. Gill, S. S. Patel, K. Y. Tu, Y. K. Chen, and A. E. White, “Process flow innovations for photonic device integration in CMOS,” Proc. SPIE 6898, 689804(2008).
[Crossref]

D. Ahn, C. Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref] [PubMed]

S. Luryi, A. Kastalsky, and J. C. Bean, “New infrared detector on a silicon chip,” IEEE Trans. Electron. Dev. 31(9), 1135–1139 (1984).
[Crossref]

M. Beals, J. Michel, J. F. Liu, D. H. Ahn, D. Sparacin, R. Sun, C. Y. Hong, L. C. Kimerling, A. Pomerene, D. Carothers, J. Beattie, A. Kopa, A. Apsel, M. S. Rasras, D. M. Gill, S. S. Patel, K. Y. Tu, Y. K. Chen, and A. E. White, “Process flow innovations for photonic device integration in CMOS,” Proc. SPIE 6898, 689804(2008).
[Crossref]

N. D. Nguyen, E. Rosseel, S. Takeuchi, J. L. Everaert, L. Yang, J. Goossens, A. Moussa, T. Clarysse, O. Richard, H. Bender, S. Zaima, A. Sakai, R. Loo, J. C. Lin, W. Vandervorst, and M. Caymax, “Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology,” Thin Solid Films 518(6), S48–S52 (2010).
[Crossref]

V. Craciun, I. W. Boyd, B. Hutton, and D. Williams, “Characteristics of dielectric layers grown on Ge by low temperature vacuum ultraviolet-assisted oxidation,” Appl. Phys. Lett. 75(9), 1261–1263 (1999).
[Crossref]

M. Beals, J. Michel, J. F. Liu, D. H. Ahn, D. Sparacin, R. Sun, C. Y. Hong, L. C. Kimerling, A. Pomerene, D. Carothers, J. Beattie, A. Kopa, A. Apsel, M. S. Rasras, D. M. Gill, S. S. Patel, K. Y. Tu, Y. K. Chen, and A. E. White, “Process flow innovations for photonic device integration in CMOS,” Proc. SPIE 6898, 689804(2008).
[Crossref]

N. D. Nguyen, E. Rosseel, S. Takeuchi, J. L. Everaert, L. Yang, J. Goossens, A. Moussa, T. Clarysse, O. Richard, H. Bender, S. Zaima, A. Sakai, R. Loo, J. C. Lin, W. Vandervorst, and M. Caymax, “Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology,” Thin Solid Films 518(6), S48–S52 (2010).
[Crossref]

D. Ahn, C. Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref] [PubMed]

H. C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]

M. Beals, J. Michel, J. F. Liu, D. H. Ahn, D. Sparacin, R. Sun, C. Y. Hong, L. C. Kimerling, A. Pomerene, D. Carothers, J. Beattie, A. Kopa, A. Apsel, M. S. Rasras, D. M. Gill, S. S. Patel, K. Y. Tu, Y. K. Chen, and A. E. White, “Process flow innovations for photonic device integration in CMOS,” Proc. SPIE 6898, 689804(2008).
[Crossref]

T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007).
[Crossref] [PubMed]

J. Osmond, G. Isella, D. Chrastina, R. Kaufmann, M. Acciarri, and H. von Kanel, “Ultralow dark current Ge/Si(100) photodiodes with low thermal budget,” Appl. Phys. Lett. 94(20), 201106 (2009).
[Crossref]

S. J. Koester, J. D. Schaub, G. Dehlinger, and J. O. Chu, “Germanium-on-SOI infrared detectors for integrated photonic applications,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1489–1502 (2006).
[Crossref]

N. D. Nguyen, E. Rosseel, S. Takeuchi, J. L. Everaert, L. Yang, J. Goossens, A. Moussa, T. Clarysse, O. Richard, H. Bender, S. Zaima, A. Sakai, R. Loo, J. C. Lin, W. Vandervorst, and M. Caymax, “Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology,” Thin Solid Films 518(6), S48–S52 (2010).
[Crossref]

T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007).
[Crossref] [PubMed]

L. Colace, P. Ferrara, G. Assanto, D. Fulgoni, and L. Nash, “Low dark-current germanium-on-silicon near-infrared detectors,” IEEE Photon. Technol. Lett. 19(22), 1813–1815 (2007).
[Crossref]

V. Craciun, I. W. Boyd, B. Hutton, and D. Williams, “Characteristics of dielectric layers grown on Ge by low temperature vacuum ultraviolet-assisted oxidation,” Appl. Phys. Lett. 75(9), 1261–1263 (1999).
[Crossref]

E. E. Crisman, J. I. Lee, P. J. Stiles, and O. J. Gregory, “Characterisation of n-channel germanium mosfet with gate insulator formed by high-pressure thermal oxidation,” Electron. Lett. 23(1), 8–10 (1987).
[Crossref]

C. O. Cui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, “Activation and diffusion studies of ion-implanted p and n dopants in germanium,” Appl. Phys. Lett. 83(16), 3275–3277 (2003).
[Crossref]

S. B. Samavedam, M. T. Currie, T. A. Langdo, and E. A. Fitzgerald, “High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers,” Appl. Phys. Lett. 73(15), 2125–2127 (1998).
[Crossref]

S. J. Koester, J. D. Schaub, G. Dehlinger, and J. O. Chu, “Germanium-on-SOI infrared detectors for integrated photonic applications,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1489–1502 (2006).
[Crossref]

N. D. Nguyen, E. Rosseel, S. Takeuchi, J. L. Everaert, L. Yang, J. Goossens, A. Moussa, T. Clarysse, O. Richard, H. Bender, S. Zaima, A. Sakai, R. Loo, J. C. Lin, W. Vandervorst, and M. Caymax, “Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology,” Thin Solid Films 518(6), S48–S52 (2010).
[Crossref]

K. W. Ang, T. Y. Liow, M. B. Yu, Q. Fang, J. Song, G. Q. Lo, and D. L. Kwong, “Low thermal budget monolithic integration of evanescent-coupled Ge-on-SOI photodetector on Si CMOS platform,” IEEE J. Sel. Top. Quantum Electron. 16(1), 106–113 (2010).
[Crossref]

L. Colace, P. Ferrara, G. Assanto, D. Fulgoni, and L. Nash, “Low dark-current germanium-on-silicon near-infrared detectors,” IEEE Photon. Technol. Lett. 19(22), 1813–1815 (2007).
[Crossref]

O. Fidaner, A. K. Okyay, J. E. Roth, R. K. Schaevitz, Y.-H. Kuo, K. C. Saraswat, J. S. Harris, and D. A. B. Miller, “Ge–SiGe quantum-well waveguide photodetectors on silicon for the near-infrared,” IEEE Photon. Technol. Lett. 19(20), 1631–1633 (2007).
[Crossref]

S. B. Samavedam, M. T. Currie, T. A. Langdo, and E. A. Fitzgerald, “High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers,” Appl. Phys. Lett. 73(15), 2125–2127 (1998).
[Crossref]

L. Colace, P. Ferrara, G. Assanto, D. Fulgoni, and L. Nash, “Low dark-current germanium-on-silicon near-infrared detectors,” IEEE Photon. Technol. Lett. 19(22), 1813–1815 (2007).
[Crossref]

M. Beals, J. Michel, J. F. Liu, D. H. Ahn, D. Sparacin, R. Sun, C. Y. Hong, L. C. Kimerling, A. Pomerene, D. Carothers, J. Beattie, A. Kopa, A. Apsel, M. S. Rasras, D. M. Gill, S. S. Patel, K. Y. Tu, Y. K. Chen, and A. E. White, “Process flow innovations for photonic device integration in CMOS,” Proc. SPIE 6898, 689804(2008).
[Crossref]

D. Ahn, C. Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref] [PubMed]

N. D. Nguyen, E. Rosseel, S. Takeuchi, J. L. Everaert, L. Yang, J. Goossens, A. Moussa, T. Clarysse, O. Richard, H. Bender, S. Zaima, A. Sakai, R. Loo, J. C. Lin, W. Vandervorst, and M. Caymax, “Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology,” Thin Solid Films 518(6), S48–S52 (2010).
[Crossref]

C. O. Cui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, “Activation and diffusion studies of ion-implanted p and n dopants in germanium,” Appl. Phys. Lett. 83(16), 3275–3277 (2003).
[Crossref]

E. E. Crisman, J. I. Lee, P. J. Stiles, and O. J. Gregory, “Characterisation of n-channel germanium mosfet with gate insulator formed by high-pressure thermal oxidation,” Electron. Lett. 23(1), 8–10 (1987).
[Crossref]

C. O. Cui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, “Activation and diffusion studies of ion-implanted p and n dopants in germanium,” Appl. Phys. Lett. 83(16), 3275–3277 (2003).
[Crossref]

O. Fidaner, A. K. Okyay, J. E. Roth, R. K. Schaevitz, Y.-H. Kuo, K. C. Saraswat, J. S. Harris, and D. A. B. Miller, “Ge–SiGe quantum-well waveguide photodetectors on silicon for the near-infrared,” IEEE Photon. Technol. Lett. 19(20), 1631–1633 (2007).
[Crossref]

M. Beals, J. Michel, J. F. Liu, D. H. Ahn, D. Sparacin, R. Sun, C. Y. Hong, L. C. Kimerling, A. Pomerene, D. Carothers, J. Beattie, A. Kopa, A. Apsel, M. S. Rasras, D. M. Gill, S. S. Patel, K. Y. Tu, Y. K. Chen, and A. E. White, “Process flow innovations for photonic device integration in CMOS,” Proc. SPIE 6898, 689804(2008).
[Crossref]

D. Ahn, C. Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref] [PubMed]

Y. Wang, Y. Z. Hu, and E. A. Irene, “Electron cyclotron resonance plasma and thermal oxidation mechanisms of germanium,” J. Vac. Sci. Technol. A 12(4), 1309–1314 (1994).
[Crossref]

V. Craciun, I. W. Boyd, B. Hutton, and D. Williams, “Characteristics of dielectric layers grown on Ge by low temperature vacuum ultraviolet-assisted oxidation,” Appl. Phys. Lett. 75(9), 1261–1263 (1999).
[Crossref]

Y. Wang, Y. Z. Hu, and E. A. Irene, “Electron cyclotron resonance plasma and thermal oxidation mechanisms of germanium,” J. Vac. Sci. Technol. A 12(4), 1309–1314 (1994).
[Crossref]

J. Osmond, G. Isella, D. Chrastina, R. Kaufmann, M. Acciarri, and H. von Kanel, “Ultralow dark current Ge/Si(100) photodiodes with low thermal budget,” Appl. Phys. Lett. 94(20), 201106 (2009).
[Crossref]

S. Park, T. Tsuchizawa, T. Watanabe, H. Shinojima, H. Nishi, K. Yamada, Y. Ishikawa, K. Wada, and S. Itabashi, “Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators,” Opt. Express 18(8), 8412–8421 (2010).
[Crossref] [PubMed]

S. Park, T. Tsuchizawa, T. Watanabe, H. Shinojima, H. Nishi, K. Yamada, Y. Ishikawa, K. Wada, and S. Itabashi, “Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators,” Opt. Express 18(8), 8412–8421 (2010).
[Crossref] [PubMed]

K. Morii, T. Iwasaki, R. Nakane, M. Takenaka, and S. Takagi, “High-performance GeO2/Ge nMOSFETs with source/drain junctions formed by gas-phase doping,” IEEE Electron Device Lett. 31(10), 1092–1094 (2010).
[Crossref]

M. D. Jack and J. Y. M. Lee, “DLTS measurements of a germanium MIS interface,” J. Electron. Mater. 10(3), 571–589 (1981).
[Crossref]

R. S. Johnson, H. Niimi, and G. Lucovsky, “New approach for the fabrication of device-quality Ge/GeO2 /SiO2 interfaces using low temperature remote plasma processing,” J. Vac. Sci. Technol. A 18(4), 1230–1233 (2000).
[Crossref]

H. Y. Yu, S. Ren, W. S. Jung, A. K. Okyay, D. A. B. Miller, and K. C. Saraswat, “High-efficiency p-i-n photodetectors on selective-area-grown Ge for monolithic integration,” IEEE Electron Device Lett. 30(11), 1161–1163 (2009).
[Crossref]

S. Kagawa, T. Kaneda, T. Mikawa, Y. Banba, and Y. Toyama, “Fully ion-implanted p+ -n germanium avalanche photodiodes,” Appl. Phys. Lett. 38(6), 429–431 (1981).
[Crossref]

H. Ando, H. Kanbe, T. Kimura, T. Yamaoka, and T. Kaneda, “Characteristics of germanium avalanche photodiodes in the wavelength region of 1-1.6 μm,” IEEE J. Quantum Electron. 14(11), 804–809 (1978).
[Crossref]

S. Kagawa, T. Kaneda, T. Mikawa, Y. Banba, and Y. Toyama, “Fully ion-implanted p+ -n germanium avalanche photodiodes,” Appl. Phys. Lett. 38(6), 429–431 (1981).
[Crossref]

H. Ando, H. Kanbe, T. Kimura, T. Yamaoka, and T. Kaneda, “Characteristics of germanium avalanche photodiodes in the wavelength region of 1-1.6 μm,” IEEE J. Quantum Electron. 14(11), 804–809 (1978).
[Crossref]

D. Ahn, C. Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref] [PubMed]

S. Luryi, A. Kastalsky, and J. C. Bean, “New infrared detector on a silicon chip,” IEEE Trans. Electron. Dev. 31(9), 1135–1139 (1984).
[Crossref]

J. Osmond, G. Isella, D. Chrastina, R. Kaufmann, M. Acciarri, and H. von Kanel, “Ultralow dark current Ge/Si(100) photodiodes with low thermal budget,” Appl. Phys. Lett. 94(20), 201106 (2009).
[Crossref]

J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photonics 4(8), 527–534 (2010).
[Crossref]

M. Beals, J. Michel, J. F. Liu, D. H. Ahn, D. Sparacin, R. Sun, C. Y. Hong, L. C. Kimerling, A. Pomerene, D. Carothers, J. Beattie, A. Kopa, A. Apsel, M. S. Rasras, D. M. Gill, S. S. Patel, K. Y. Tu, Y. K. Chen, and A. E. White, “Process flow innovations for photonic device integration in CMOS,” Proc. SPIE 6898, 689804(2008).
[Crossref]

D. Ahn, C. Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref] [PubMed]

H. C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]

H. Ando, H. Kanbe, T. Kimura, T. Yamaoka, and T. Kaneda, “Characteristics of germanium avalanche photodiodes in the wavelength region of 1-1.6 μm,” IEEE J. Quantum Electron. 14(11), 804–809 (1978).
[Crossref]

S. J. Koester, J. D. Schaub, G. Dehlinger, and J. O. Chu, “Germanium-on-SOI infrared detectors for integrated photonic applications,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1489–1502 (2006).
[Crossref]

M. Beals, J. Michel, J. F. Liu, D. H. Ahn, D. Sparacin, R. Sun, C. Y. Hong, L. C. Kimerling, A. Pomerene, D. Carothers, J. Beattie, A. Kopa, A. Apsel, M. S. Rasras, D. M. Gill, S. S. Patel, K. Y. Tu, Y. K. Chen, and A. E. White, “Process flow innovations for photonic device integration in CMOS,” Proc. SPIE 6898, 689804(2008).
[Crossref]

O. Fidaner, A. K. Okyay, J. E. Roth, R. K. Schaevitz, Y.-H. Kuo, K. C. Saraswat, J. S. Harris, and D. A. B. Miller, “Ge–SiGe quantum-well waveguide photodetectors on silicon for the near-infrared,” IEEE Photon. Technol. Lett. 19(20), 1631–1633 (2007).
[Crossref]

K. W. Ang, T. Y. Liow, M. B. Yu, Q. Fang, J. Song, G. Q. Lo, and D. L. Kwong, “Low thermal budget monolithic integration of evanescent-coupled Ge-on-SOI photodetector on Si CMOS platform,” IEEE J. Sel. Top. Quantum Electron. 16(1), 106–113 (2010).
[Crossref]

T. H. Loh, H. S. Nguyen, R. Murthy, M. B. Yu, W. Y. Loh, G. Q. Lo, N. Balasubramanian, D. L. Kwong, J. Wang, and S. J. Lee, “Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer,” Appl. Phys. Lett. 91(7), 073503 (2007).
[Crossref]

S. B. Samavedam, M. T. Currie, T. A. Langdo, and E. A. Fitzgerald, “High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers,” Appl. Phys. Lett. 73(15), 2125–2127 (1998).
[Crossref]

E. E. Crisman, J. I. Lee, P. J. Stiles, and O. J. Gregory, “Characterisation of n-channel germanium mosfet with gate insulator formed by high-pressure thermal oxidation,” Electron. Lett. 23(1), 8–10 (1987).
[Crossref]

M. D. Jack and J. Y. M. Lee, “DLTS measurements of a germanium MIS interface,” J. Electron. Mater. 10(3), 571–589 (1981).
[Crossref]

H. C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]

T. H. Loh, H. S. Nguyen, R. Murthy, M. B. Yu, W. Y. Loh, G. Q. Lo, N. Balasubramanian, D. L. Kwong, J. Wang, and S. J. Lee, “Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer,” Appl. Phys. Lett. 91(7), 073503 (2007).
[Crossref]

H. C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]

N. D. Nguyen, E. Rosseel, S. Takeuchi, J. L. Everaert, L. Yang, J. Goossens, A. Moussa, T. Clarysse, O. Richard, H. Bender, S. Zaima, A. Sakai, R. Loo, J. C. Lin, W. Vandervorst, and M. Caymax, “Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology,” Thin Solid Films 518(6), S48–S52 (2010).
[Crossref]

K. W. Ang, T. Y. Liow, M. B. Yu, Q. Fang, J. Song, G. Q. Lo, and D. L. Kwong, “Low thermal budget monolithic integration of evanescent-coupled Ge-on-SOI photodetector on Si CMOS platform,” IEEE J. Sel. Top. Quantum Electron. 16(1), 106–113 (2010).
[Crossref]

J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photonics 4(8), 527–534 (2010).
[Crossref]

D. Ahn, C. Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref] [PubMed]

M. Beals, J. Michel, J. F. Liu, D. H. Ahn, D. Sparacin, R. Sun, C. Y. Hong, L. C. Kimerling, A. Pomerene, D. Carothers, J. Beattie, A. Kopa, A. Apsel, M. S. Rasras, D. M. Gill, S. S. Patel, K. Y. Tu, Y. K. Chen, and A. E. White, “Process flow innovations for photonic device integration in CMOS,” Proc. SPIE 6898, 689804(2008).
[Crossref]

K. W. Ang, T. Y. Liow, M. B. Yu, Q. Fang, J. Song, G. Q. Lo, and D. L. Kwong, “Low thermal budget monolithic integration of evanescent-coupled Ge-on-SOI photodetector on Si CMOS platform,” IEEE J. Sel. Top. Quantum Electron. 16(1), 106–113 (2010).
[Crossref]

T. H. Loh, H. S. Nguyen, R. Murthy, M. B. Yu, W. Y. Loh, G. Q. Lo, N. Balasubramanian, D. L. Kwong, J. Wang, and S. J. Lee, “Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer,” Appl. Phys. Lett. 91(7), 073503 (2007).
[Crossref]

T. H. Loh, H. S. Nguyen, R. Murthy, M. B. Yu, W. Y. Loh, G. Q. Lo, N. Balasubramanian, D. L. Kwong, J. Wang, and S. J. Lee, “Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer,” Appl. Phys. Lett. 91(7), 073503 (2007).
[Crossref]

T. H. Loh, H. S. Nguyen, R. Murthy, M. B. Yu, W. Y. Loh, G. Q. Lo, N. Balasubramanian, D. L. Kwong, J. Wang, and S. J. Lee, “Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer,” Appl. Phys. Lett. 91(7), 073503 (2007).
[Crossref]

N. D. Nguyen, E. Rosseel, S. Takeuchi, J. L. Everaert, L. Yang, J. Goossens, A. Moussa, T. Clarysse, O. Richard, H. Bender, S. Zaima, A. Sakai, R. Loo, J. C. Lin, W. Vandervorst, and M. Caymax, “Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology,” Thin Solid Films 518(6), S48–S52 (2010).
[Crossref]

H. C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]

R. S. Johnson, H. Niimi, and G. Lucovsky, “New approach for the fabrication of device-quality Ge/GeO2 /SiO2 interfaces using low temperature remote plasma processing,” J. Vac. Sci. Technol. A 18(4), 1230–1233 (2000).
[Crossref]

S. Luryi, A. Kastalsky, and J. C. Bean, “New infrared detector on a silicon chip,” IEEE Trans. Electron. Dev. 31(9), 1135–1139 (1984).
[Crossref]

H. Matsubara, T. Sasada, M. Takenaka, and S. Takagi, “Evidence of low interface trap density in GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation,” Appl. Phys. Lett. 93(3), 032104 (2008).
[Crossref]

J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photonics 4(8), 527–534 (2010).
[Crossref]

M. Beals, J. Michel, J. F. Liu, D. H. Ahn, D. Sparacin, R. Sun, C. Y. Hong, L. C. Kimerling, A. Pomerene, D. Carothers, J. Beattie, A. Kopa, A. Apsel, M. S. Rasras, D. M. Gill, S. S. Patel, K. Y. Tu, Y. K. Chen, and A. E. White, “Process flow innovations for photonic device integration in CMOS,” Proc. SPIE 6898, 689804(2008).
[Crossref]

D. Ahn, C. Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref] [PubMed]

S. Kagawa, T. Kaneda, T. Mikawa, Y. Banba, and Y. Toyama, “Fully ion-implanted p+ -n germanium avalanche photodiodes,” Appl. Phys. Lett. 38(6), 429–431 (1981).
[Crossref]

H. Y. Yu, S. Ren, W. S. Jung, A. K. Okyay, D. A. B. Miller, and K. C. Saraswat, “High-efficiency p-i-n photodetectors on selective-area-grown Ge for monolithic integration,” IEEE Electron Device Lett. 30(11), 1161–1163 (2009).
[Crossref]

O. Fidaner, A. K. Okyay, J. E. Roth, R. K. Schaevitz, Y.-H. Kuo, K. C. Saraswat, J. S. Harris, and D. A. B. Miller, “Ge–SiGe quantum-well waveguide photodetectors on silicon for the near-infrared,” IEEE Photon. Technol. Lett. 19(20), 1631–1633 (2007).
[Crossref]

M. Takenaka, K. Morii, M. Sugiyama, Y. Nakano, and S. Takagi, “Gas phase doping of arsenic into (100), (110), and (111) germanium substrates using a metal–organic source,” Jpn. J. Appl. Phys. 50, 010105 (2011).
[Crossref]

K. Morii, T. Iwasaki, R. Nakane, M. Takenaka, and S. Takagi, “High-performance GeO2/Ge nMOSFETs with source/drain junctions formed by gas-phase doping,” IEEE Electron Device Lett. 31(10), 1092–1094 (2010).
[Crossref]

T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007).
[Crossref] [PubMed]

N. D. Nguyen, E. Rosseel, S. Takeuchi, J. L. Everaert, L. Yang, J. Goossens, A. Moussa, T. Clarysse, O. Richard, H. Bender, S. Zaima, A. Sakai, R. Loo, J. C. Lin, W. Vandervorst, and M. Caymax, “Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology,” Thin Solid Films 518(6), S48–S52 (2010).
[Crossref]

T. H. Loh, H. S. Nguyen, R. Murthy, M. B. Yu, W. Y. Loh, G. Q. Lo, N. Balasubramanian, D. L. Kwong, J. Wang, and S. J. Lee, “Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer,” Appl. Phys. Lett. 91(7), 073503 (2007).
[Crossref]

Y. Nakakita, R. Nakakne, T. Sasada, M. Takenaka, and S. Takagi, “Interface-controlled self-align source/drain Ge p-channel metal–oxide–semiconductor field-effect transistors fabricated using thermally oxidized GeO2 interfacial layers,” Jpn. J. Appl. Phys. 50, 010109 (2011).
[Crossref]

T. Sasada, Y. Nakakita, M. Takenaka, and S. Takagi, “Surface orientation dependence of interface properties of GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation,” J. Appl. Phys. 106(7), 073716 (2009).
[Crossref]

Y. Nakakita, R. Nakakne, T. Sasada, M. Takenaka, and S. Takagi, “Interface-controlled self-align source/drain Ge p-channel metal–oxide–semiconductor field-effect transistors fabricated using thermally oxidized GeO2 interfacial layers,” Jpn. J. Appl. Phys. 50, 010109 (2011).
[Crossref]

K. Morii, T. Iwasaki, R. Nakane, M. Takenaka, and S. Takagi, “High-performance GeO2/Ge nMOSFETs with source/drain junctions formed by gas-phase doping,” IEEE Electron Device Lett. 31(10), 1092–1094 (2010).
[Crossref]

M. Takenaka, K. Morii, M. Sugiyama, Y. Nakano, and S. Takagi, “Gas phase doping of arsenic into (100), (110), and (111) germanium substrates using a metal–organic source,” Jpn. J. Appl. Phys. 50, 010105 (2011).
[Crossref]

L. Colace, P. Ferrara, G. Assanto, D. Fulgoni, and L. Nash, “Low dark-current germanium-on-silicon near-infrared detectors,” IEEE Photon. Technol. Lett. 19(22), 1813–1815 (2007).
[Crossref]

T. H. Loh, H. S. Nguyen, R. Murthy, M. B. Yu, W. Y. Loh, G. Q. Lo, N. Balasubramanian, D. L. Kwong, J. Wang, and S. J. Lee, “Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer,” Appl. Phys. Lett. 91(7), 073503 (2007).
[Crossref]

N. D. Nguyen, E. Rosseel, S. Takeuchi, J. L. Everaert, L. Yang, J. Goossens, A. Moussa, T. Clarysse, O. Richard, H. Bender, S. Zaima, A. Sakai, R. Loo, J. C. Lin, W. Vandervorst, and M. Caymax, “Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology,” Thin Solid Films 518(6), S48–S52 (2010).
[Crossref]

R. S. Johnson, H. Niimi, and G. Lucovsky, “New approach for the fabrication of device-quality Ge/GeO2 /SiO2 interfaces using low temperature remote plasma processing,” J. Vac. Sci. Technol. A 18(4), 1230–1233 (2000).
[Crossref]

S. Park, T. Tsuchizawa, T. Watanabe, H. Shinojima, H. Nishi, K. Yamada, Y. Ishikawa, K. Wada, and S. Itabashi, “Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators,” Opt. Express 18(8), 8412–8421 (2010).
[Crossref] [PubMed]

H. Y. Yu, S. Ren, W. S. Jung, A. K. Okyay, D. A. B. Miller, and K. C. Saraswat, “High-efficiency p-i-n photodetectors on selective-area-grown Ge for monolithic integration,” IEEE Electron Device Lett. 30(11), 1161–1163 (2009).
[Crossref]

O. Fidaner, A. K. Okyay, J. E. Roth, R. K. Schaevitz, Y.-H. Kuo, K. C. Saraswat, J. S. Harris, and D. A. B. Miller, “Ge–SiGe quantum-well waveguide photodetectors on silicon for the near-infrared,” IEEE Photon. Technol. Lett. 19(20), 1631–1633 (2007).
[Crossref]

J. Osmond, G. Isella, D. Chrastina, R. Kaufmann, M. Acciarri, and H. von Kanel, “Ultralow dark current Ge/Si(100) photodiodes with low thermal budget,” Appl. Phys. Lett. 94(20), 201106 (2009).
[Crossref]

T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007).
[Crossref] [PubMed]

S. Park, T. Tsuchizawa, T. Watanabe, H. Shinojima, H. Nishi, K. Yamada, Y. Ishikawa, K. Wada, and S. Itabashi, “Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators,” Opt. Express 18(8), 8412–8421 (2010).
[Crossref] [PubMed]

M. Beals, J. Michel, J. F. Liu, D. H. Ahn, D. Sparacin, R. Sun, C. Y. Hong, L. C. Kimerling, A. Pomerene, D. Carothers, J. Beattie, A. Kopa, A. Apsel, M. S. Rasras, D. M. Gill, S. S. Patel, K. Y. Tu, Y. K. Chen, and A. E. White, “Process flow innovations for photonic device integration in CMOS,” Proc. SPIE 6898, 689804(2008).
[Crossref]

C. O. Cui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, “Activation and diffusion studies of ion-implanted p and n dopants in germanium,” Appl. Phys. Lett. 83(16), 3275–3277 (2003).
[Crossref]

M. Beals, J. Michel, J. F. Liu, D. H. Ahn, D. Sparacin, R. Sun, C. Y. Hong, L. C. Kimerling, A. Pomerene, D. Carothers, J. Beattie, A. Kopa, A. Apsel, M. S. Rasras, D. M. Gill, S. S. Patel, K. Y. Tu, Y. K. Chen, and A. E. White, “Process flow innovations for photonic device integration in CMOS,” Proc. SPIE 6898, 689804(2008).
[Crossref]

M. Beals, J. Michel, J. F. Liu, D. H. Ahn, D. Sparacin, R. Sun, C. Y. Hong, L. C. Kimerling, A. Pomerene, D. Carothers, J. Beattie, A. Kopa, A. Apsel, M. S. Rasras, D. M. Gill, S. S. Patel, K. Y. Tu, Y. K. Chen, and A. E. White, “Process flow innovations for photonic device integration in CMOS,” Proc. SPIE 6898, 689804(2008).
[Crossref]

H. Y. Yu, S. Ren, W. S. Jung, A. K. Okyay, D. A. B. Miller, and K. C. Saraswat, “High-efficiency p-i-n photodetectors on selective-area-grown Ge for monolithic integration,” IEEE Electron Device Lett. 30(11), 1161–1163 (2009).
[Crossref]

N. D. Nguyen, E. Rosseel, S. Takeuchi, J. L. Everaert, L. Yang, J. Goossens, A. Moussa, T. Clarysse, O. Richard, H. Bender, S. Zaima, A. Sakai, R. Loo, J. C. Lin, W. Vandervorst, and M. Caymax, “Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology,” Thin Solid Films 518(6), S48–S52 (2010).
[Crossref]

N. D. Nguyen, E. Rosseel, S. Takeuchi, J. L. Everaert, L. Yang, J. Goossens, A. Moussa, T. Clarysse, O. Richard, H. Bender, S. Zaima, A. Sakai, R. Loo, J. C. Lin, W. Vandervorst, and M. Caymax, “Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology,” Thin Solid Films 518(6), S48–S52 (2010).
[Crossref]

O. Fidaner, A. K. Okyay, J. E. Roth, R. K. Schaevitz, Y.-H. Kuo, K. C. Saraswat, J. S. Harris, and D. A. B. Miller, “Ge–SiGe quantum-well waveguide photodetectors on silicon for the near-infrared,” IEEE Photon. Technol. Lett. 19(20), 1631–1633 (2007).
[Crossref]

T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007).
[Crossref] [PubMed]

N. D. Nguyen, E. Rosseel, S. Takeuchi, J. L. Everaert, L. Yang, J. Goossens, A. Moussa, T. Clarysse, O. Richard, H. Bender, S. Zaima, A. Sakai, R. Loo, J. C. Lin, W. Vandervorst, and M. Caymax, “Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology,” Thin Solid Films 518(6), S48–S52 (2010).
[Crossref]

S. B. Samavedam, M. T. Currie, T. A. Langdo, and E. A. Fitzgerald, “High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers,” Appl. Phys. Lett. 73(15), 2125–2127 (1998).
[Crossref]

H. C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]

H. Y. Yu, S. Ren, W. S. Jung, A. K. Okyay, D. A. B. Miller, and K. C. Saraswat, “High-efficiency p-i-n photodetectors on selective-area-grown Ge for monolithic integration,” IEEE Electron Device Lett. 30(11), 1161–1163 (2009).
[Crossref]

O. Fidaner, A. K. Okyay, J. E. Roth, R. K. Schaevitz, Y.-H. Kuo, K. C. Saraswat, J. S. Harris, and D. A. B. Miller, “Ge–SiGe quantum-well waveguide photodetectors on silicon for the near-infrared,” IEEE Photon. Technol. Lett. 19(20), 1631–1633 (2007).
[Crossref]

C. O. Cui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, “Activation and diffusion studies of ion-implanted p and n dopants in germanium,” Appl. Phys. Lett. 83(16), 3275–3277 (2003).
[Crossref]

T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007).
[Crossref] [PubMed]

Y. Nakakita, R. Nakakne, T. Sasada, M. Takenaka, and S. Takagi, “Interface-controlled self-align source/drain Ge p-channel metal–oxide–semiconductor field-effect transistors fabricated using thermally oxidized GeO2 interfacial layers,” Jpn. J. Appl. Phys. 50, 010109 (2011).
[Crossref]

T. Sasada, Y. Nakakita, M. Takenaka, and S. Takagi, “Surface orientation dependence of interface properties of GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation,” J. Appl. Phys. 106(7), 073716 (2009).
[Crossref]

H. Matsubara, T. Sasada, M. Takenaka, and S. Takagi, “Evidence of low interface trap density in GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation,” Appl. Phys. Lett. 93(3), 032104 (2008).
[Crossref]

O. Fidaner, A. K. Okyay, J. E. Roth, R. K. Schaevitz, Y.-H. Kuo, K. C. Saraswat, J. S. Harris, and D. A. B. Miller, “Ge–SiGe quantum-well waveguide photodetectors on silicon for the near-infrared,” IEEE Photon. Technol. Lett. 19(20), 1631–1633 (2007).
[Crossref]

S. J. Koester, J. D. Schaub, G. Dehlinger, and J. O. Chu, “Germanium-on-SOI infrared detectors for integrated photonic applications,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1489–1502 (2006).
[Crossref]

S. Park, T. Tsuchizawa, T. Watanabe, H. Shinojima, H. Nishi, K. Yamada, Y. Ishikawa, K. Wada, and S. Itabashi, “Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators,” Opt. Express 18(8), 8412–8421 (2010).
[Crossref] [PubMed]

K. W. Ang, T. Y. Liow, M. B. Yu, Q. Fang, J. Song, G. Q. Lo, and D. L. Kwong, “Low thermal budget monolithic integration of evanescent-coupled Ge-on-SOI photodetector on Si CMOS platform,” IEEE J. Sel. Top. Quantum Electron. 16(1), 106–113 (2010).
[Crossref]

M. Beals, J. Michel, J. F. Liu, D. H. Ahn, D. Sparacin, R. Sun, C. Y. Hong, L. C. Kimerling, A. Pomerene, D. Carothers, J. Beattie, A. Kopa, A. Apsel, M. S. Rasras, D. M. Gill, S. S. Patel, K. Y. Tu, Y. K. Chen, and A. E. White, “Process flow innovations for photonic device integration in CMOS,” Proc. SPIE 6898, 689804(2008).
[Crossref]

E. E. Crisman, J. I. Lee, P. J. Stiles, and O. J. Gregory, “Characterisation of n-channel germanium mosfet with gate insulator formed by high-pressure thermal oxidation,” Electron. Lett. 23(1), 8–10 (1987).
[Crossref]

M. Takenaka, K. Morii, M. Sugiyama, Y. Nakano, and S. Takagi, “Gas phase doping of arsenic into (100), (110), and (111) germanium substrates using a metal–organic source,” Jpn. J. Appl. Phys. 50, 010105 (2011).
[Crossref]

M. Beals, J. Michel, J. F. Liu, D. H. Ahn, D. Sparacin, R. Sun, C. Y. Hong, L. C. Kimerling, A. Pomerene, D. Carothers, J. Beattie, A. Kopa, A. Apsel, M. S. Rasras, D. M. Gill, S. S. Patel, K. Y. Tu, Y. K. Chen, and A. E. White, “Process flow innovations for photonic device integration in CMOS,” Proc. SPIE 6898, 689804(2008).
[Crossref]

M. Takenaka, K. Morii, M. Sugiyama, Y. Nakano, and S. Takagi, “Gas phase doping of arsenic into (100), (110), and (111) germanium substrates using a metal–organic source,” Jpn. J. Appl. Phys. 50, 010105 (2011).
[Crossref]

Y. Nakakita, R. Nakakne, T. Sasada, M. Takenaka, and S. Takagi, “Interface-controlled self-align source/drain Ge p-channel metal–oxide–semiconductor field-effect transistors fabricated using thermally oxidized GeO2 interfacial layers,” Jpn. J. Appl. Phys. 50, 010109 (2011).
[Crossref]

K. Morii, T. Iwasaki, R. Nakane, M. Takenaka, and S. Takagi, “High-performance GeO2/Ge nMOSFETs with source/drain junctions formed by gas-phase doping,” IEEE Electron Device Lett. 31(10), 1092–1094 (2010).
[Crossref]

T. Sasada, Y. Nakakita, M. Takenaka, and S. Takagi, “Surface orientation dependence of interface properties of GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation,” J. Appl. Phys. 106(7), 073716 (2009).
[Crossref]

H. Matsubara, T. Sasada, M. Takenaka, and S. Takagi, “Evidence of low interface trap density in GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation,” Appl. Phys. Lett. 93(3), 032104 (2008).
[Crossref]

Y. Nakakita, R. Nakakne, T. Sasada, M. Takenaka, and S. Takagi, “Interface-controlled self-align source/drain Ge p-channel metal–oxide–semiconductor field-effect transistors fabricated using thermally oxidized GeO2 interfacial layers,” Jpn. J. Appl. Phys. 50, 010109 (2011).
[Crossref]

M. Takenaka, K. Morii, M. Sugiyama, Y. Nakano, and S. Takagi, “Gas phase doping of arsenic into (100), (110), and (111) germanium substrates using a metal–organic source,” Jpn. J. Appl. Phys. 50, 010105 (2011).
[Crossref]

K. Morii, T. Iwasaki, R. Nakane, M. Takenaka, and S. Takagi, “High-performance GeO2/Ge nMOSFETs with source/drain junctions formed by gas-phase doping,” IEEE Electron Device Lett. 31(10), 1092–1094 (2010).
[Crossref]

T. Sasada, Y. Nakakita, M. Takenaka, and S. Takagi, “Surface orientation dependence of interface properties of GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation,” J. Appl. Phys. 106(7), 073716 (2009).
[Crossref]

H. Matsubara, T. Sasada, M. Takenaka, and S. Takagi, “Evidence of low interface trap density in GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation,” Appl. Phys. Lett. 93(3), 032104 (2008).
[Crossref]

N. D. Nguyen, E. Rosseel, S. Takeuchi, J. L. Everaert, L. Yang, J. Goossens, A. Moussa, T. Clarysse, O. Richard, H. Bender, S. Zaima, A. Sakai, R. Loo, J. C. Lin, W. Vandervorst, and M. Caymax, “Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology,” Thin Solid Films 518(6), S48–S52 (2010).
[Crossref]

S. Kagawa, T. Kaneda, T. Mikawa, Y. Banba, and Y. Toyama, “Fully ion-implanted p+ -n germanium avalanche photodiodes,” Appl. Phys. Lett. 38(6), 429–431 (1981).
[Crossref]

S. Park, T. Tsuchizawa, T. Watanabe, H. Shinojima, H. Nishi, K. Yamada, Y. Ishikawa, K. Wada, and S. Itabashi, “Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators,” Opt. Express 18(8), 8412–8421 (2010).
[Crossref] [PubMed]

M. Beals, J. Michel, J. F. Liu, D. H. Ahn, D. Sparacin, R. Sun, C. Y. Hong, L. C. Kimerling, A. Pomerene, D. Carothers, J. Beattie, A. Kopa, A. Apsel, M. S. Rasras, D. M. Gill, S. S. Patel, K. Y. Tu, Y. K. Chen, and A. E. White, “Process flow innovations for photonic device integration in CMOS,” Proc. SPIE 6898, 689804(2008).
[Crossref]

N. D. Nguyen, E. Rosseel, S. Takeuchi, J. L. Everaert, L. Yang, J. Goossens, A. Moussa, T. Clarysse, O. Richard, H. Bender, S. Zaima, A. Sakai, R. Loo, J. C. Lin, W. Vandervorst, and M. Caymax, “Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology,” Thin Solid Films 518(6), S48–S52 (2010).
[Crossref]

S. Assefa, F. Xia, and Y. A. Vlasov, “Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects,” Nature 464(7285), 80–84 (2010).
[Crossref] [PubMed]

J. Osmond, G. Isella, D. Chrastina, R. Kaufmann, M. Acciarri, and H. von Kanel, “Ultralow dark current Ge/Si(100) photodiodes with low thermal budget,” Appl. Phys. Lett. 94(20), 201106 (2009).
[Crossref]

S. Park, T. Tsuchizawa, T. Watanabe, H. Shinojima, H. Nishi, K. Yamada, Y. Ishikawa, K. Wada, and S. Itabashi, “Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators,” Opt. Express 18(8), 8412–8421 (2010).
[Crossref] [PubMed]

H. C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]

T. H. Loh, H. S. Nguyen, R. Murthy, M. B. Yu, W. Y. Loh, G. Q. Lo, N. Balasubramanian, D. L. Kwong, J. Wang, and S. J. Lee, “Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer,” Appl. Phys. Lett. 91(7), 073503 (2007).
[Crossref]

Y. Wang, Y. Z. Hu, and E. A. Irene, “Electron cyclotron resonance plasma and thermal oxidation mechanisms of germanium,” J. Vac. Sci. Technol. A 12(4), 1309–1314 (1994).
[Crossref]

S. Park, T. Tsuchizawa, T. Watanabe, H. Shinojima, H. Nishi, K. Yamada, Y. Ishikawa, K. Wada, and S. Itabashi, “Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators,” Opt. Express 18(8), 8412–8421 (2010).
[Crossref] [PubMed]

M. Beals, J. Michel, J. F. Liu, D. H. Ahn, D. Sparacin, R. Sun, C. Y. Hong, L. C. Kimerling, A. Pomerene, D. Carothers, J. Beattie, A. Kopa, A. Apsel, M. S. Rasras, D. M. Gill, S. S. Patel, K. Y. Tu, Y. K. Chen, and A. E. White, “Process flow innovations for photonic device integration in CMOS,” Proc. SPIE 6898, 689804(2008).
[Crossref]

V. Craciun, I. W. Boyd, B. Hutton, and D. Williams, “Characteristics of dielectric layers grown on Ge by low temperature vacuum ultraviolet-assisted oxidation,” Appl. Phys. Lett. 75(9), 1261–1263 (1999).
[Crossref]

S. Assefa, F. Xia, and Y. A. Vlasov, “Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects,” Nature 464(7285), 80–84 (2010).
[Crossref] [PubMed]

S. Park, T. Tsuchizawa, T. Watanabe, H. Shinojima, H. Nishi, K. Yamada, Y. Ishikawa, K. Wada, and S. Itabashi, “Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators,” Opt. Express 18(8), 8412–8421 (2010).
[Crossref] [PubMed]

H. Ando, H. Kanbe, T. Kimura, T. Yamaoka, and T. Kaneda, “Characteristics of germanium avalanche photodiodes in the wavelength region of 1-1.6 μm,” IEEE J. Quantum Electron. 14(11), 804–809 (1978).
[Crossref]

N. D. Nguyen, E. Rosseel, S. Takeuchi, J. L. Everaert, L. Yang, J. Goossens, A. Moussa, T. Clarysse, O. Richard, H. Bender, S. Zaima, A. Sakai, R. Loo, J. C. Lin, W. Vandervorst, and M. Caymax, “Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology,” Thin Solid Films 518(6), S48–S52 (2010).
[Crossref]

T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007).
[Crossref] [PubMed]

H. Y. Yu, S. Ren, W. S. Jung, A. K. Okyay, D. A. B. Miller, and K. C. Saraswat, “High-efficiency p-i-n photodetectors on selective-area-grown Ge for monolithic integration,” IEEE Electron Device Lett. 30(11), 1161–1163 (2009).
[Crossref]

K. W. Ang, T. Y. Liow, M. B. Yu, Q. Fang, J. Song, G. Q. Lo, and D. L. Kwong, “Low thermal budget monolithic integration of evanescent-coupled Ge-on-SOI photodetector on Si CMOS platform,” IEEE J. Sel. Top. Quantum Electron. 16(1), 106–113 (2010).
[Crossref]

T. H. Loh, H. S. Nguyen, R. Murthy, M. B. Yu, W. Y. Loh, G. Q. Lo, N. Balasubramanian, D. L. Kwong, J. Wang, and S. J. Lee, “Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer,” Appl. Phys. Lett. 91(7), 073503 (2007).
[Crossref]

N. D. Nguyen, E. Rosseel, S. Takeuchi, J. L. Everaert, L. Yang, J. Goossens, A. Moussa, T. Clarysse, O. Richard, H. Bender, S. Zaima, A. Sakai, R. Loo, J. C. Lin, W. Vandervorst, and M. Caymax, “Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology,” Thin Solid Films 518(6), S48–S52 (2010).
[Crossref]

S. Kagawa, T. Kaneda, T. Mikawa, Y. Banba, and Y. Toyama, “Fully ion-implanted p+ -n germanium avalanche photodiodes,” Appl. Phys. Lett. 38(6), 429–431 (1981).
[Crossref]

C. O. Cui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, “Activation and diffusion studies of ion-implanted p and n dopants in germanium,” Appl. Phys. Lett. 83(16), 3275–3277 (2003).
[Crossref]

H. Matsubara, T. Sasada, M. Takenaka, and S. Takagi, “Evidence of low interface trap density in GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation,” Appl. Phys. Lett. 93(3), 032104 (2008).
[Crossref]

V. Craciun, I. W. Boyd, B. Hutton, and D. Williams, “Characteristics of dielectric layers grown on Ge by low temperature vacuum ultraviolet-assisted oxidation,” Appl. Phys. Lett. 75(9), 1261–1263 (1999).
[Crossref]

S. B. Samavedam, M. T. Currie, T. A. Langdo, and E. A. Fitzgerald, “High-quality germanium photodiodes integrated on silicon substrates using optimized relaxed graded buffers,” Appl. Phys. Lett. 73(15), 2125–2127 (1998).
[Crossref]

H. C. Luan, D. R. Lim, K. K. Lee, K. M. Chen, J. G. Sandland, K. Wada, and L. C. Kimerling, “High-quality Ge epilayers on Si with low threading-dislocation densities,” Appl. Phys. Lett. 75(19), 2909–2911 (1999).
[Crossref]

J. Osmond, G. Isella, D. Chrastina, R. Kaufmann, M. Acciarri, and H. von Kanel, “Ultralow dark current Ge/Si(100) photodiodes with low thermal budget,” Appl. Phys. Lett. 94(20), 201106 (2009).
[Crossref]

T. H. Loh, H. S. Nguyen, R. Murthy, M. B. Yu, W. Y. Loh, G. Q. Lo, N. Balasubramanian, D. L. Kwong, J. Wang, and S. J. Lee, “Selective epitaxial germanium on silicon-on-insulator high speed photodetectors using low-temperature ultrathin Si0.8Ge0.2 buffer,” Appl. Phys. Lett. 91(7), 073503 (2007).
[Crossref]

E. E. Crisman, J. I. Lee, P. J. Stiles, and O. J. Gregory, “Characterisation of n-channel germanium mosfet with gate insulator formed by high-pressure thermal oxidation,” Electron. Lett. 23(1), 8–10 (1987).
[Crossref]

K. Morii, T. Iwasaki, R. Nakane, M. Takenaka, and S. Takagi, “High-performance GeO2/Ge nMOSFETs with source/drain junctions formed by gas-phase doping,” IEEE Electron Device Lett. 31(10), 1092–1094 (2010).
[Crossref]

H. Y. Yu, S. Ren, W. S. Jung, A. K. Okyay, D. A. B. Miller, and K. C. Saraswat, “High-efficiency p-i-n photodetectors on selective-area-grown Ge for monolithic integration,” IEEE Electron Device Lett. 30(11), 1161–1163 (2009).
[Crossref]

H. Ando, H. Kanbe, T. Kimura, T. Yamaoka, and T. Kaneda, “Characteristics of germanium avalanche photodiodes in the wavelength region of 1-1.6 μm,” IEEE J. Quantum Electron. 14(11), 804–809 (1978).
[Crossref]

S. J. Koester, J. D. Schaub, G. Dehlinger, and J. O. Chu, “Germanium-on-SOI infrared detectors for integrated photonic applications,” IEEE J. Sel. Top. Quantum Electron. 12(6), 1489–1502 (2006).
[Crossref]

K. W. Ang, T. Y. Liow, M. B. Yu, Q. Fang, J. Song, G. Q. Lo, and D. L. Kwong, “Low thermal budget monolithic integration of evanescent-coupled Ge-on-SOI photodetector on Si CMOS platform,” IEEE J. Sel. Top. Quantum Electron. 16(1), 106–113 (2010).
[Crossref]

O. Fidaner, A. K. Okyay, J. E. Roth, R. K. Schaevitz, Y.-H. Kuo, K. C. Saraswat, J. S. Harris, and D. A. B. Miller, “Ge–SiGe quantum-well waveguide photodetectors on silicon for the near-infrared,” IEEE Photon. Technol. Lett. 19(20), 1631–1633 (2007).
[Crossref]

L. Colace, P. Ferrara, G. Assanto, D. Fulgoni, and L. Nash, “Low dark-current germanium-on-silicon near-infrared detectors,” IEEE Photon. Technol. Lett. 19(22), 1813–1815 (2007).
[Crossref]

S. Luryi, A. Kastalsky, and J. C. Bean, “New infrared detector on a silicon chip,” IEEE Trans. Electron. Dev. 31(9), 1135–1139 (1984).
[Crossref]

T. Sasada, Y. Nakakita, M. Takenaka, and S. Takagi, “Surface orientation dependence of interface properties of GeO2/Ge metal-oxide-semiconductor structures fabricated by thermal oxidation,” J. Appl. Phys. 106(7), 073716 (2009).
[Crossref]

M. D. Jack and J. Y. M. Lee, “DLTS measurements of a germanium MIS interface,” J. Electron. Mater. 10(3), 571–589 (1981).
[Crossref]

Y. Wang, Y. Z. Hu, and E. A. Irene, “Electron cyclotron resonance plasma and thermal oxidation mechanisms of germanium,” J. Vac. Sci. Technol. A 12(4), 1309–1314 (1994).
[Crossref]

R. S. Johnson, H. Niimi, and G. Lucovsky, “New approach for the fabrication of device-quality Ge/GeO2 /SiO2 interfaces using low temperature remote plasma processing,” J. Vac. Sci. Technol. A 18(4), 1230–1233 (2000).
[Crossref]

Y. Nakakita, R. Nakakne, T. Sasada, M. Takenaka, and S. Takagi, “Interface-controlled self-align source/drain Ge p-channel metal–oxide–semiconductor field-effect transistors fabricated using thermally oxidized GeO2 interfacial layers,” Jpn. J. Appl. Phys. 50, 010109 (2011).
[Crossref]

M. Takenaka, K. Morii, M. Sugiyama, Y. Nakano, and S. Takagi, “Gas phase doping of arsenic into (100), (110), and (111) germanium substrates using a metal–organic source,” Jpn. J. Appl. Phys. 50, 010105 (2011).
[Crossref]

J. Michel, J. Liu, and L. C. Kimerling, “High-performance Ge-on-Si photodetectors,” Nat. Photonics 4(8), 527–534 (2010).
[Crossref]

S. Assefa, F. Xia, and Y. A. Vlasov, “Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects,” Nature 464(7285), 80–84 (2010).
[Crossref] [PubMed]

D. Ahn, C. Y. Hong, J. Liu, W. Giziewicz, M. Beals, L. C. Kimerling, J. Michel, J. Chen, and F. X. Kärtner, “High performance, waveguide integrated Ge photodetectors,” Opt. Express 15(7), 3916–3921 (2007).
[Crossref] [PubMed]

T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007).
[Crossref] [PubMed]

S. Park, T. Tsuchizawa, T. Watanabe, H. Shinojima, H. Nishi, K. Yamada, Y. Ishikawa, K. Wada, and S. Itabashi, “Monolithic integration and synchronous operation of germanium photodetectors and silicon variable optical attenuators,” Opt. Express 18(8), 8412–8421 (2010).
[Crossref] [PubMed]

M. Beals, J. Michel, J. F. Liu, D. H. Ahn, D. Sparacin, R. Sun, C. Y. Hong, L. C. Kimerling, A. Pomerene, D. Carothers, J. Beattie, A. Kopa, A. Apsel, M. S. Rasras, D. M. Gill, S. S. Patel, K. Y. Tu, Y. K. Chen, and A. E. White, “Process flow innovations for photonic device integration in CMOS,” Proc. SPIE 6898, 689804(2008).
[Crossref]

N. D. Nguyen, E. Rosseel, S. Takeuchi, J. L. Everaert, L. Yang, J. Goossens, A. Moussa, T. Clarysse, O. Richard, H. Bender, S. Zaima, A. Sakai, R. Loo, J. C. Lin, W. Vandervorst, and M. Caymax, “Use of p- and n-type vapor phase doping and sub-melt laser anneal for extension junctions in sub-32 nm CMOS technology,” Thin Solid Films 518(6), S48–S52 (2010).
[Crossref]

Thorlabs Inc, http://www.thorlabs.com .