Dependences of photoluminescence from P-implanted epitaxial Ge

G. Grzybowski, R. Roucka, J. Mathews, L. Jiang, R. T. Beeler, J. Kouvetakis, and J. Menendez, “Direct versus indirect optical recombination in Ge films grown on Si substrate,” Phys. Rev. B 84(20), 205307 (2011).
[Crossref]

T.-H. Cheng, K.-L. Peng, C.-Y. Ko, C.-Y. Chen, H.-S. Lan, Y.-R. Wu, C. W. Liu, and H.-H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition,” Appl. Phys. Lett. 96(21), 211108 (2010).
[Crossref]

J. Joo, S. Kim, I. G. Kim, K. S. Jang, and G. Kim, “High-sensitivity 10 Gbps Ge-on-Si photoreceiver operating at lambda approximately 1.55 microm,” Opt. Express 18(16), 16474–16479 (2010).
[Crossref] [PubMed]

X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes,” Opt. Lett. 34(8), 1198–1200 (2009).
[Crossref] [PubMed]

S.-L. Cheng, J. Lu, G. Shambat, H.-Y. Yu, K. Saraswat, J. Vuckovic, and Y. Nishi, “Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate,” Opt. Express 17(12), 10019–10024 (2009).
[Crossref] [PubMed]

X. Sun, J. Liu, L. C. Kimerling, J. Michel, and T. L. Koch, “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si,” Appl. Phys. Lett. 95(1), 011911 (2009).
[Crossref]

M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Débarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94(19), 191107 (2009).
[Crossref]

L. Chen, P. Dong, and M. Lipson, “High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding,” Opt. Express 16(15), 11513–11518 (2008).
[Crossref] [PubMed]

K.-W. Ang, M.-B. Yu, S.-Y. Zhu, K.-T. Chua, G.-Q. Lo, and D.-L. Kwong, “Novel NiGe MSM photodetector featuring asymmetrical Schottky barriers using sulfur Co-implantation and segregation,” IEEE Electron Device Lett. 29(7), 708–711 (2008).
[Crossref]

K.-W. Ang, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Low voltage and high responsivity germanium bipolar phototransistor for optical detections in the near-infrared regime,” IEEE Electron Device Lett. 29(10), 1124–1127 (2008).
[Crossref]

J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, “Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si,” Opt. Express 15(18), 11272–11277 (2007).
[Crossref] [PubMed]

T. H. Loh, H. S. Nguyen, C. H. Tung, A. D. Trigg, G. Q. Lo, N. Balasubramanian, D. L. Kwong, and S. Tripathy, “Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition,” Appl. Phys. Lett. 90(9), 092108 (2007).
[Crossref]

A. Chroneos, D. Skarlatos, C. Tsamis, A. Christofi, D. S. McPhail, and R. Hung, “Implantation and diffusion of phosphorous in germanium,” Mater. Sci. Semicond. Process. 9(4-5), 640–643 (2006).
[Crossref]

C. O. Chui, L. Kulig, J. Moran, W. Tsai, and K. C. Saraswat, “Germanium n-type shallow junction activation dependences,” Appl. Phys. Lett. 87(9), 091909 (2005).
[Crossref]

C. H. Poon, L. S. Tan, B. J. Cho, and A. Y. Du, “Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing,” J. Electrochem. Soc. 152(12), G895–G899 (2005).
[Crossref]

D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications,” Appl. Phys. Lett. 84(6), 906–908 (2004).
[Crossref]

C. O. Chui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, “Activation and diffusion studies of ion-implanted p and n dopants in germanium,” Appl. Phys. Lett. 83(16), 3275–3277 (2003).
[Crossref]

F. Cerdeira, C. Buchenauer, F. Pollak, and M. Cardona, “Stress-induced shifts of first-order Raman frequencies of diamond- and Zinc-blende-type semiconductors,” Phys. Rev. B 5(2), 580–593 (1972).
[Crossref]

S. M. Sze and J. C. Irvin, “Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300 °K,” Solid-State Electron. 11(6), 599–602 (1968).
[Crossref]

K.-W. Ang, M.-B. Yu, S.-Y. Zhu, K.-T. Chua, G.-Q. Lo, and D.-L. Kwong, “Novel NiGe MSM photodetector featuring asymmetrical Schottky barriers using sulfur Co-implantation and segregation,” IEEE Electron Device Lett. 29(7), 708–711 (2008).
[Crossref]

K.-W. Ang, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Low voltage and high responsivity germanium bipolar phototransistor for optical detections in the near-infrared regime,” IEEE Electron Device Lett. 29(10), 1124–1127 (2008).
[Crossref]

T. H. Loh, H. S. Nguyen, C. H. Tung, A. D. Trigg, G. Q. Lo, N. Balasubramanian, D. L. Kwong, and S. Tripathy, “Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition,” Appl. Phys. Lett. 90(9), 092108 (2007).
[Crossref]

G. Grzybowski, R. Roucka, J. Mathews, L. Jiang, R. T. Beeler, J. Kouvetakis, and J. Menendez, “Direct versus indirect optical recombination in Ge films grown on Si substrate,” Phys. Rev. B 84(20), 205307 (2011).
[Crossref]

M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Débarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94(19), 191107 (2009).
[Crossref]

M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Débarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94(19), 191107 (2009).
[Crossref]

M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Débarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94(19), 191107 (2009).
[Crossref]

F. Cerdeira, C. Buchenauer, F. Pollak, and M. Cardona, “Stress-induced shifts of first-order Raman frequencies of diamond- and Zinc-blende-type semiconductors,” Phys. Rev. B 5(2), 580–593 (1972).
[Crossref]

D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications,” Appl. Phys. Lett. 84(6), 906–908 (2004).
[Crossref]

F. Cerdeira, C. Buchenauer, F. Pollak, and M. Cardona, “Stress-induced shifts of first-order Raman frequencies of diamond- and Zinc-blende-type semiconductors,” Phys. Rev. B 5(2), 580–593 (1972).
[Crossref]

F. Cerdeira, C. Buchenauer, F. Pollak, and M. Cardona, “Stress-induced shifts of first-order Raman frequencies of diamond- and Zinc-blende-type semiconductors,” Phys. Rev. B 5(2), 580–593 (1972).
[Crossref]

T.-H. Cheng, K.-L. Peng, C.-Y. Ko, C.-Y. Chen, H.-S. Lan, Y.-R. Wu, C. W. Liu, and H.-H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition,” Appl. Phys. Lett. 96(21), 211108 (2010).
[Crossref]

L. Chen, P. Dong, and M. Lipson, “High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding,” Opt. Express 16(15), 11513–11518 (2008).
[Crossref] [PubMed]

S.-L. Cheng, J. Lu, G. Shambat, H.-Y. Yu, K. Saraswat, J. Vuckovic, and Y. Nishi, “Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate,” Opt. Express 17(12), 10019–10024 (2009).
[Crossref] [PubMed]

T.-H. Cheng, K.-L. Peng, C.-Y. Ko, C.-Y. Chen, H.-S. Lan, Y.-R. Wu, C. W. Liu, and H.-H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition,” Appl. Phys. Lett. 96(21), 211108 (2010).
[Crossref]

C. H. Poon, L. S. Tan, B. J. Cho, and A. Y. Du, “Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing,” J. Electrochem. Soc. 152(12), G895–G899 (2005).
[Crossref]

A. Chroneos, D. Skarlatos, C. Tsamis, A. Christofi, D. S. McPhail, and R. Hung, “Implantation and diffusion of phosphorous in germanium,” Mater. Sci. Semicond. Process. 9(4-5), 640–643 (2006).
[Crossref]

A. Chroneos, D. Skarlatos, C. Tsamis, A. Christofi, D. S. McPhail, and R. Hung, “Implantation and diffusion of phosphorous in germanium,” Mater. Sci. Semicond. Process. 9(4-5), 640–643 (2006).
[Crossref]

K.-W. Ang, M.-B. Yu, S.-Y. Zhu, K.-T. Chua, G.-Q. Lo, and D.-L. Kwong, “Novel NiGe MSM photodetector featuring asymmetrical Schottky barriers using sulfur Co-implantation and segregation,” IEEE Electron Device Lett. 29(7), 708–711 (2008).
[Crossref]

C. O. Chui, L. Kulig, J. Moran, W. Tsai, and K. C. Saraswat, “Germanium n-type shallow junction activation dependences,” Appl. Phys. Lett. 87(9), 091909 (2005).
[Crossref]

C. O. Chui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, “Activation and diffusion studies of ion-implanted p and n dopants in germanium,” Appl. Phys. Lett. 83(16), 3275–3277 (2003).
[Crossref]

M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Débarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94(19), 191107 (2009).
[Crossref]

D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications,” Appl. Phys. Lett. 84(6), 906–908 (2004).
[Crossref]

M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Débarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94(19), 191107 (2009).
[Crossref]

L. Chen, P. Dong, and M. Lipson, “High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding,” Opt. Express 16(15), 11513–11518 (2008).
[Crossref] [PubMed]

C. H. Poon, L. S. Tan, B. J. Cho, and A. Y. Du, “Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing,” J. Electrochem. Soc. 152(12), G895–G899 (2005).
[Crossref]

M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Débarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94(19), 191107 (2009).
[Crossref]

C. O. Chui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, “Activation and diffusion studies of ion-implanted p and n dopants in germanium,” Appl. Phys. Lett. 83(16), 3275–3277 (2003).
[Crossref]

C. O. Chui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, “Activation and diffusion studies of ion-implanted p and n dopants in germanium,” Appl. Phys. Lett. 83(16), 3275–3277 (2003).
[Crossref]

G. Grzybowski, R. Roucka, J. Mathews, L. Jiang, R. T. Beeler, J. Kouvetakis, and J. Menendez, “Direct versus indirect optical recombination in Ge films grown on Si substrate,” Phys. Rev. B 84(20), 205307 (2011).
[Crossref]

A. Chroneos, D. Skarlatos, C. Tsamis, A. Christofi, D. S. McPhail, and R. Hung, “Implantation and diffusion of phosphorous in germanium,” Mater. Sci. Semicond. Process. 9(4-5), 640–643 (2006).
[Crossref]

S. M. Sze and J. C. Irvin, “Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300 °K,” Solid-State Electron. 11(6), 599–602 (1968).
[Crossref]

D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications,” Appl. Phys. Lett. 84(6), 906–908 (2004).
[Crossref]

J. Joo, S. Kim, I. G. Kim, K. S. Jang, and G. Kim, “High-sensitivity 10 Gbps Ge-on-Si photoreceiver operating at lambda approximately 1.55 microm,” Opt. Express 18(16), 16474–16479 (2010).
[Crossref] [PubMed]

G. Grzybowski, R. Roucka, J. Mathews, L. Jiang, R. T. Beeler, J. Kouvetakis, and J. Menendez, “Direct versus indirect optical recombination in Ge films grown on Si substrate,” Phys. Rev. B 84(20), 205307 (2011).
[Crossref]

D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications,” Appl. Phys. Lett. 84(6), 906–908 (2004).
[Crossref]

J. Joo, S. Kim, I. G. Kim, K. S. Jang, and G. Kim, “High-sensitivity 10 Gbps Ge-on-Si photoreceiver operating at lambda approximately 1.55 microm,” Opt. Express 18(16), 16474–16479 (2010).
[Crossref] [PubMed]

M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Débarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94(19), 191107 (2009).
[Crossref]

J. Joo, S. Kim, I. G. Kim, K. S. Jang, and G. Kim, “High-sensitivity 10 Gbps Ge-on-Si photoreceiver operating at lambda approximately 1.55 microm,” Opt. Express 18(16), 16474–16479 (2010).
[Crossref] [PubMed]

J. Joo, S. Kim, I. G. Kim, K. S. Jang, and G. Kim, “High-sensitivity 10 Gbps Ge-on-Si photoreceiver operating at lambda approximately 1.55 microm,” Opt. Express 18(16), 16474–16479 (2010).
[Crossref] [PubMed]

J. Joo, S. Kim, I. G. Kim, K. S. Jang, and G. Kim, “High-sensitivity 10 Gbps Ge-on-Si photoreceiver operating at lambda approximately 1.55 microm,” Opt. Express 18(16), 16474–16479 (2010).
[Crossref] [PubMed]

X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes,” Opt. Lett. 34(8), 1198–1200 (2009).
[Crossref] [PubMed]

X. Sun, J. Liu, L. C. Kimerling, J. Michel, and T. L. Koch, “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si,” Appl. Phys. Lett. 95(1), 011911 (2009).
[Crossref]

J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, “Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si,” Opt. Express 15(18), 11272–11277 (2007).
[Crossref] [PubMed]

D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications,” Appl. Phys. Lett. 84(6), 906–908 (2004).
[Crossref]

T.-H. Cheng, K.-L. Peng, C.-Y. Ko, C.-Y. Chen, H.-S. Lan, Y.-R. Wu, C. W. Liu, and H.-H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition,” Appl. Phys. Lett. 96(21), 211108 (2010).
[Crossref]

X. Sun, J. Liu, L. C. Kimerling, J. Michel, and T. L. Koch, “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si,” Appl. Phys. Lett. 95(1), 011911 (2009).
[Crossref]

J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, “Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si,” Opt. Express 15(18), 11272–11277 (2007).
[Crossref] [PubMed]

M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Débarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94(19), 191107 (2009).
[Crossref]

G. Grzybowski, R. Roucka, J. Mathews, L. Jiang, R. T. Beeler, J. Kouvetakis, and J. Menendez, “Direct versus indirect optical recombination in Ge films grown on Si substrate,” Phys. Rev. B 84(20), 205307 (2011).
[Crossref]

C. O. Chui, L. Kulig, J. Moran, W. Tsai, and K. C. Saraswat, “Germanium n-type shallow junction activation dependences,” Appl. Phys. Lett. 87(9), 091909 (2005).
[Crossref]

T. H. Loh, H. S. Nguyen, C. H. Tung, A. D. Trigg, G. Q. Lo, N. Balasubramanian, D. L. Kwong, and S. Tripathy, “Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition,” Appl. Phys. Lett. 90(9), 092108 (2007).
[Crossref]

K.-W. Ang, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Low voltage and high responsivity germanium bipolar phototransistor for optical detections in the near-infrared regime,” IEEE Electron Device Lett. 29(10), 1124–1127 (2008).
[Crossref]

K.-W. Ang, M.-B. Yu, S.-Y. Zhu, K.-T. Chua, G.-Q. Lo, and D.-L. Kwong, “Novel NiGe MSM photodetector featuring asymmetrical Schottky barriers using sulfur Co-implantation and segregation,” IEEE Electron Device Lett. 29(7), 708–711 (2008).
[Crossref]

T.-H. Cheng, K.-L. Peng, C.-Y. Ko, C.-Y. Chen, H.-S. Lan, Y.-R. Wu, C. W. Liu, and H.-H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition,” Appl. Phys. Lett. 96(21), 211108 (2010).
[Crossref]

L. Chen, P. Dong, and M. Lipson, “High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding,” Opt. Express 16(15), 11513–11518 (2008).
[Crossref] [PubMed]

T.-H. Cheng, K.-L. Peng, C.-Y. Ko, C.-Y. Chen, H.-S. Lan, Y.-R. Wu, C. W. Liu, and H.-H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition,” Appl. Phys. Lett. 96(21), 211108 (2010).
[Crossref]

X. Sun, J. Liu, L. C. Kimerling, J. Michel, and T. L. Koch, “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si,” Appl. Phys. Lett. 95(1), 011911 (2009).
[Crossref]

X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes,” Opt. Lett. 34(8), 1198–1200 (2009).
[Crossref] [PubMed]

J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, “Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si,” Opt. Express 15(18), 11272–11277 (2007).
[Crossref] [PubMed]

D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications,” Appl. Phys. Lett. 84(6), 906–908 (2004).
[Crossref]

T. H. Loh, H. S. Nguyen, C. H. Tung, A. D. Trigg, G. Q. Lo, N. Balasubramanian, D. L. Kwong, and S. Tripathy, “Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition,” Appl. Phys. Lett. 90(9), 092108 (2007).
[Crossref]

K.-W. Ang, M.-B. Yu, S.-Y. Zhu, K.-T. Chua, G.-Q. Lo, and D.-L. Kwong, “Novel NiGe MSM photodetector featuring asymmetrical Schottky barriers using sulfur Co-implantation and segregation,” IEEE Electron Device Lett. 29(7), 708–711 (2008).
[Crossref]

K.-W. Ang, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Low voltage and high responsivity germanium bipolar phototransistor for optical detections in the near-infrared regime,” IEEE Electron Device Lett. 29(10), 1124–1127 (2008).
[Crossref]

T. H. Loh, H. S. Nguyen, C. H. Tung, A. D. Trigg, G. Q. Lo, N. Balasubramanian, D. L. Kwong, and S. Tripathy, “Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition,” Appl. Phys. Lett. 90(9), 092108 (2007).
[Crossref]

S.-L. Cheng, J. Lu, G. Shambat, H.-Y. Yu, K. Saraswat, J. Vuckovic, and Y. Nishi, “Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate,” Opt. Express 17(12), 10019–10024 (2009).
[Crossref] [PubMed]

G. Grzybowski, R. Roucka, J. Mathews, L. Jiang, R. T. Beeler, J. Kouvetakis, and J. Menendez, “Direct versus indirect optical recombination in Ge films grown on Si substrate,” Phys. Rev. B 84(20), 205307 (2011).
[Crossref]

A. Chroneos, D. Skarlatos, C. Tsamis, A. Christofi, D. S. McPhail, and R. Hung, “Implantation and diffusion of phosphorous in germanium,” Mater. Sci. Semicond. Process. 9(4-5), 640–643 (2006).
[Crossref]

G. Grzybowski, R. Roucka, J. Mathews, L. Jiang, R. T. Beeler, J. Kouvetakis, and J. Menendez, “Direct versus indirect optical recombination in Ge films grown on Si substrate,” Phys. Rev. B 84(20), 205307 (2011).
[Crossref]

X. Sun, J. Liu, L. C. Kimerling, J. Michel, and T. L. Koch, “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si,” Appl. Phys. Lett. 95(1), 011911 (2009).
[Crossref]

X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes,” Opt. Lett. 34(8), 1198–1200 (2009).
[Crossref] [PubMed]

J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, “Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si,” Opt. Express 15(18), 11272–11277 (2007).
[Crossref] [PubMed]

D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications,” Appl. Phys. Lett. 84(6), 906–908 (2004).
[Crossref]

C. O. Chui, L. Kulig, J. Moran, W. Tsai, and K. C. Saraswat, “Germanium n-type shallow junction activation dependences,” Appl. Phys. Lett. 87(9), 091909 (2005).
[Crossref]

M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Débarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94(19), 191107 (2009).
[Crossref]

T. H. Loh, H. S. Nguyen, C. H. Tung, A. D. Trigg, G. Q. Lo, N. Balasubramanian, D. L. Kwong, and S. Tripathy, “Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition,” Appl. Phys. Lett. 90(9), 092108 (2007).
[Crossref]

S.-L. Cheng, J. Lu, G. Shambat, H.-Y. Yu, K. Saraswat, J. Vuckovic, and Y. Nishi, “Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate,” Opt. Express 17(12), 10019–10024 (2009).
[Crossref] [PubMed]

J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, “Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si,” Opt. Express 15(18), 11272–11277 (2007).
[Crossref] [PubMed]

T.-H. Cheng, K.-L. Peng, C.-Y. Ko, C.-Y. Chen, H.-S. Lan, Y.-R. Wu, C. W. Liu, and H.-H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition,” Appl. Phys. Lett. 96(21), 211108 (2010).
[Crossref]

C. O. Chui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, “Activation and diffusion studies of ion-implanted p and n dopants in germanium,” Appl. Phys. Lett. 83(16), 3275–3277 (2003).
[Crossref]

F. Cerdeira, C. Buchenauer, F. Pollak, and M. Cardona, “Stress-induced shifts of first-order Raman frequencies of diamond- and Zinc-blende-type semiconductors,” Phys. Rev. B 5(2), 580–593 (1972).
[Crossref]

C. H. Poon, L. S. Tan, B. J. Cho, and A. Y. Du, “Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing,” J. Electrochem. Soc. 152(12), G895–G899 (2005).
[Crossref]

G. Grzybowski, R. Roucka, J. Mathews, L. Jiang, R. T. Beeler, J. Kouvetakis, and J. Menendez, “Direct versus indirect optical recombination in Ge films grown on Si substrate,” Phys. Rev. B 84(20), 205307 (2011).
[Crossref]

S.-L. Cheng, J. Lu, G. Shambat, H.-Y. Yu, K. Saraswat, J. Vuckovic, and Y. Nishi, “Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate,” Opt. Express 17(12), 10019–10024 (2009).
[Crossref] [PubMed]

C. O. Chui, L. Kulig, J. Moran, W. Tsai, and K. C. Saraswat, “Germanium n-type shallow junction activation dependences,” Appl. Phys. Lett. 87(9), 091909 (2005).
[Crossref]

C. O. Chui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, “Activation and diffusion studies of ion-implanted p and n dopants in germanium,” Appl. Phys. Lett. 83(16), 3275–3277 (2003).
[Crossref]

S.-L. Cheng, J. Lu, G. Shambat, H.-Y. Yu, K. Saraswat, J. Vuckovic, and Y. Nishi, “Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate,” Opt. Express 17(12), 10019–10024 (2009).
[Crossref] [PubMed]

A. Chroneos, D. Skarlatos, C. Tsamis, A. Christofi, D. S. McPhail, and R. Hung, “Implantation and diffusion of phosphorous in germanium,” Mater. Sci. Semicond. Process. 9(4-5), 640–643 (2006).
[Crossref]

X. Sun, J. Liu, L. C. Kimerling, J. Michel, and T. L. Koch, “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si,” Appl. Phys. Lett. 95(1), 011911 (2009).
[Crossref]

X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes,” Opt. Lett. 34(8), 1198–1200 (2009).
[Crossref] [PubMed]

J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, “Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si,” Opt. Express 15(18), 11272–11277 (2007).
[Crossref] [PubMed]

S. M. Sze and J. C. Irvin, “Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300 °K,” Solid-State Electron. 11(6), 599–602 (1968).
[Crossref]

C. H. Poon, L. S. Tan, B. J. Cho, and A. Y. Du, “Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing,” J. Electrochem. Soc. 152(12), G895–G899 (2005).
[Crossref]

T. H. Loh, H. S. Nguyen, C. H. Tung, A. D. Trigg, G. Q. Lo, N. Balasubramanian, D. L. Kwong, and S. Tripathy, “Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition,” Appl. Phys. Lett. 90(9), 092108 (2007).
[Crossref]

T. H. Loh, H. S. Nguyen, C. H. Tung, A. D. Trigg, G. Q. Lo, N. Balasubramanian, D. L. Kwong, and S. Tripathy, “Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition,” Appl. Phys. Lett. 90(9), 092108 (2007).
[Crossref]

C. O. Chui, L. Kulig, J. Moran, W. Tsai, and K. C. Saraswat, “Germanium n-type shallow junction activation dependences,” Appl. Phys. Lett. 87(9), 091909 (2005).
[Crossref]

A. Chroneos, D. Skarlatos, C. Tsamis, A. Christofi, D. S. McPhail, and R. Hung, “Implantation and diffusion of phosphorous in germanium,” Mater. Sci. Semicond. Process. 9(4-5), 640–643 (2006).
[Crossref]

T.-H. Cheng, K.-L. Peng, C.-Y. Ko, C.-Y. Chen, H.-S. Lan, Y.-R. Wu, C. W. Liu, and H.-H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition,” Appl. Phys. Lett. 96(21), 211108 (2010).
[Crossref]

T. H. Loh, H. S. Nguyen, C. H. Tung, A. D. Trigg, G. Q. Lo, N. Balasubramanian, D. L. Kwong, and S. Tripathy, “Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition,” Appl. Phys. Lett. 90(9), 092108 (2007).
[Crossref]

S.-L. Cheng, J. Lu, G. Shambat, H.-Y. Yu, K. Saraswat, J. Vuckovic, and Y. Nishi, “Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate,” Opt. Express 17(12), 10019–10024 (2009).
[Crossref] [PubMed]

D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications,” Appl. Phys. Lett. 84(6), 906–908 (2004).
[Crossref]

J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, “Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si,” Opt. Express 15(18), 11272–11277 (2007).
[Crossref] [PubMed]

T.-H. Cheng, K.-L. Peng, C.-Y. Ko, C.-Y. Chen, H.-S. Lan, Y.-R. Wu, C. W. Liu, and H.-H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition,” Appl. Phys. Lett. 96(21), 211108 (2010).
[Crossref]

S.-L. Cheng, J. Lu, G. Shambat, H.-Y. Yu, K. Saraswat, J. Vuckovic, and Y. Nishi, “Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate,” Opt. Express 17(12), 10019–10024 (2009).
[Crossref] [PubMed]

K.-W. Ang, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Low voltage and high responsivity germanium bipolar phototransistor for optical detections in the near-infrared regime,” IEEE Electron Device Lett. 29(10), 1124–1127 (2008).
[Crossref]

K.-W. Ang, M.-B. Yu, S.-Y. Zhu, K.-T. Chua, G.-Q. Lo, and D.-L. Kwong, “Novel NiGe MSM photodetector featuring asymmetrical Schottky barriers using sulfur Co-implantation and segregation,” IEEE Electron Device Lett. 29(7), 708–711 (2008).
[Crossref]

K.-W. Ang, M.-B. Yu, S.-Y. Zhu, K.-T. Chua, G.-Q. Lo, and D.-L. Kwong, “Novel NiGe MSM photodetector featuring asymmetrical Schottky barriers using sulfur Co-implantation and segregation,” IEEE Electron Device Lett. 29(7), 708–711 (2008).
[Crossref]

X. Sun, J. Liu, L. C. Kimerling, J. Michel, and T. L. Koch, “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si,” Appl. Phys. Lett. 95(1), 011911 (2009).
[Crossref]

M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Débarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94(19), 191107 (2009).
[Crossref]

T.-H. Cheng, K.-L. Peng, C.-Y. Ko, C.-Y. Chen, H.-S. Lan, Y.-R. Wu, C. W. Liu, and H.-H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition,” Appl. Phys. Lett. 96(21), 211108 (2010).
[Crossref]

C. O. Chui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, “Activation and diffusion studies of ion-implanted p and n dopants in germanium,” Appl. Phys. Lett. 83(16), 3275–3277 (2003).
[Crossref]

C. O. Chui, L. Kulig, J. Moran, W. Tsai, and K. C. Saraswat, “Germanium n-type shallow junction activation dependences,” Appl. Phys. Lett. 87(9), 091909 (2005).
[Crossref]

T. H. Loh, H. S. Nguyen, C. H. Tung, A. D. Trigg, G. Q. Lo, N. Balasubramanian, D. L. Kwong, and S. Tripathy, “Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition,” Appl. Phys. Lett. 90(9), 092108 (2007).
[Crossref]

D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications,” Appl. Phys. Lett. 84(6), 906–908 (2004).
[Crossref]

K.-W. Ang, M.-B. Yu, S.-Y. Zhu, K.-T. Chua, G.-Q. Lo, and D.-L. Kwong, “Novel NiGe MSM photodetector featuring asymmetrical Schottky barriers using sulfur Co-implantation and segregation,” IEEE Electron Device Lett. 29(7), 708–711 (2008).
[Crossref]

K.-W. Ang, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Low voltage and high responsivity germanium bipolar phototransistor for optical detections in the near-infrared regime,” IEEE Electron Device Lett. 29(10), 1124–1127 (2008).
[Crossref]

C. H. Poon, L. S. Tan, B. J. Cho, and A. Y. Du, “Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing,” J. Electrochem. Soc. 152(12), G895–G899 (2005).
[Crossref]

A. Chroneos, D. Skarlatos, C. Tsamis, A. Christofi, D. S. McPhail, and R. Hung, “Implantation and diffusion of phosphorous in germanium,” Mater. Sci. Semicond. Process. 9(4-5), 640–643 (2006).
[Crossref]

J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, “Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si,” Opt. Express 15(18), 11272–11277 (2007).
[Crossref] [PubMed]

L. Chen, P. Dong, and M. Lipson, “High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding,” Opt. Express 16(15), 11513–11518 (2008).
[Crossref] [PubMed]

S.-L. Cheng, J. Lu, G. Shambat, H.-Y. Yu, K. Saraswat, J. Vuckovic, and Y. Nishi, “Room temperature 1.6 microm electroluminescence from Ge light emitting diode on Si substrate,” Opt. Express 17(12), 10019–10024 (2009).
[Crossref] [PubMed]

J. Joo, S. Kim, I. G. Kim, K. S. Jang, and G. Kim, “High-sensitivity 10 Gbps Ge-on-Si photoreceiver operating at lambda approximately 1.55 microm,” Opt. Express 18(16), 16474–16479 (2010).
[Crossref] [PubMed]

X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes,” Opt. Lett. 34(8), 1198–1200 (2009).
[Crossref] [PubMed]

F. Cerdeira, C. Buchenauer, F. Pollak, and M. Cardona, “Stress-induced shifts of first-order Raman frequencies of diamond- and Zinc-blende-type semiconductors,” Phys. Rev. B 5(2), 580–593 (1972).
[Crossref]

G. Grzybowski, R. Roucka, J. Mathews, L. Jiang, R. T. Beeler, J. Kouvetakis, and J. Menendez, “Direct versus indirect optical recombination in Ge films grown on Si substrate,” Phys. Rev. B 84(20), 205307 (2011).
[Crossref]

S. M. Sze and J. C. Irvin, “Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300 °K,” Solid-State Electron. 11(6), 599–602 (1968).
[Crossref]

M. El Jurdi, M. de Kersauson, D. David, X. Checoury, G. Beaudoin, R. Jakomin, I. Sagnes, S. Sauvage, G. Fishman, and P. Boucaud, “Stimulated emission in single tensile-strained Ge photonic wire,” in Proceedings of 8th IEEE International. Conference on Group IV Photonics (Institute of Electrical and Electronics Engineers, England, 2011), pp. ThC8.

S. S. Mitra and N. E. Massa, Handbook of Semiconductors, T. S. Moss ed. (North-Holland, 1986) Vol. 1, p. 96.

J. Liu, X. Sun, L. C. Kimerling, and J. Michel, “Towards a Ge-based laser for CMOS applications,” in Proceedings of 5th IEEE International. Conference on Group IV Photonics (Institute of Electrical and Electronics Engineers, Italy, 2008), pp. 16–18.