K.-W. Ang, M.-B. Yu, S.-Y. Zhu, K.-T. Chua, G.-Q. Lo, and D.-L. Kwong, “Novel NiGe MSM photodetector featuring asymmetrical Schottky barriers using sulfur Co-implantation and segregation,” IEEE Electron Device Lett. 29(7), 708–711 (2008).
[Crossref]
K.-W. Ang, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Low voltage and high responsivity germanium bipolar phototransistor for optical detections in the near-infrared regime,” IEEE Electron Device Lett. 29(10), 1124–1127 (2008).
[Crossref]
T. H. Loh, H. S. Nguyen, C. H. Tung, A. D. Trigg, G. Q. Lo, N. Balasubramanian, D. L. Kwong, and S. Tripathy, “Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition,” Appl. Phys. Lett. 90(9), 092108 (2007).
[Crossref]
G. Grzybowski, R. Roucka, J. Mathews, L. Jiang, R. T. Beeler, J. Kouvetakis, and J. Menendez, “Direct versus indirect optical recombination in Ge films grown on Si substrate,” Phys. Rev. B 84(20), 205307 (2011).
[Crossref]
M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Débarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94(19), 191107 (2009).
[Crossref]
M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Débarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94(19), 191107 (2009).
[Crossref]
M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Débarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94(19), 191107 (2009).
[Crossref]
F. Cerdeira, C. Buchenauer, F. Pollak, and M. Cardona, “Stress-induced shifts of first-order Raman frequencies of diamond- and Zinc-blende-type semiconductors,” Phys. Rev. B 5(2), 580–593 (1972).
[Crossref]
D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications,” Appl. Phys. Lett. 84(6), 906–908 (2004).
[Crossref]
F. Cerdeira, C. Buchenauer, F. Pollak, and M. Cardona, “Stress-induced shifts of first-order Raman frequencies of diamond- and Zinc-blende-type semiconductors,” Phys. Rev. B 5(2), 580–593 (1972).
[Crossref]
F. Cerdeira, C. Buchenauer, F. Pollak, and M. Cardona, “Stress-induced shifts of first-order Raman frequencies of diamond- and Zinc-blende-type semiconductors,” Phys. Rev. B 5(2), 580–593 (1972).
[Crossref]
T.-H. Cheng, K.-L. Peng, C.-Y. Ko, C.-Y. Chen, H.-S. Lan, Y.-R. Wu, C. W. Liu, and H.-H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition,” Appl. Phys. Lett. 96(21), 211108 (2010).
[Crossref]
T.-H. Cheng, K.-L. Peng, C.-Y. Ko, C.-Y. Chen, H.-S. Lan, Y.-R. Wu, C. W. Liu, and H.-H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition,” Appl. Phys. Lett. 96(21), 211108 (2010).
[Crossref]
C. H. Poon, L. S. Tan, B. J. Cho, and A. Y. Du, “Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing,” J. Electrochem. Soc. 152(12), G895–G899 (2005).
[Crossref]
A. Chroneos, D. Skarlatos, C. Tsamis, A. Christofi, D. S. McPhail, and R. Hung, “Implantation and diffusion of phosphorous in germanium,” Mater. Sci. Semicond. Process. 9(4-5), 640–643 (2006).
[Crossref]
A. Chroneos, D. Skarlatos, C. Tsamis, A. Christofi, D. S. McPhail, and R. Hung, “Implantation and diffusion of phosphorous in germanium,” Mater. Sci. Semicond. Process. 9(4-5), 640–643 (2006).
[Crossref]
K.-W. Ang, M.-B. Yu, S.-Y. Zhu, K.-T. Chua, G.-Q. Lo, and D.-L. Kwong, “Novel NiGe MSM photodetector featuring asymmetrical Schottky barriers using sulfur Co-implantation and segregation,” IEEE Electron Device Lett. 29(7), 708–711 (2008).
[Crossref]
C. O. Chui, L. Kulig, J. Moran, W. Tsai, and K. C. Saraswat, “Germanium n-type shallow junction activation dependences,” Appl. Phys. Lett. 87(9), 091909 (2005).
[Crossref]
C. O. Chui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, “Activation and diffusion studies of ion-implanted p and n dopants in germanium,” Appl. Phys. Lett. 83(16), 3275–3277 (2003).
[Crossref]
M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Débarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94(19), 191107 (2009).
[Crossref]
D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications,” Appl. Phys. Lett. 84(6), 906–908 (2004).
[Crossref]
M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Débarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94(19), 191107 (2009).
[Crossref]
C. H. Poon, L. S. Tan, B. J. Cho, and A. Y. Du, “Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing,” J. Electrochem. Soc. 152(12), G895–G899 (2005).
[Crossref]
M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Débarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94(19), 191107 (2009).
[Crossref]
C. O. Chui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, “Activation and diffusion studies of ion-implanted p and n dopants in germanium,” Appl. Phys. Lett. 83(16), 3275–3277 (2003).
[Crossref]
C. O. Chui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, “Activation and diffusion studies of ion-implanted p and n dopants in germanium,” Appl. Phys. Lett. 83(16), 3275–3277 (2003).
[Crossref]
G. Grzybowski, R. Roucka, J. Mathews, L. Jiang, R. T. Beeler, J. Kouvetakis, and J. Menendez, “Direct versus indirect optical recombination in Ge films grown on Si substrate,” Phys. Rev. B 84(20), 205307 (2011).
[Crossref]
A. Chroneos, D. Skarlatos, C. Tsamis, A. Christofi, D. S. McPhail, and R. Hung, “Implantation and diffusion of phosphorous in germanium,” Mater. Sci. Semicond. Process. 9(4-5), 640–643 (2006).
[Crossref]
S. M. Sze and J. C. Irvin, “Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300 °K,” Solid-State Electron. 11(6), 599–602 (1968).
[Crossref]
D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications,” Appl. Phys. Lett. 84(6), 906–908 (2004).
[Crossref]
G. Grzybowski, R. Roucka, J. Mathews, L. Jiang, R. T. Beeler, J. Kouvetakis, and J. Menendez, “Direct versus indirect optical recombination in Ge films grown on Si substrate,” Phys. Rev. B 84(20), 205307 (2011).
[Crossref]
D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications,” Appl. Phys. Lett. 84(6), 906–908 (2004).
[Crossref]
M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Débarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94(19), 191107 (2009).
[Crossref]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes,” Opt. Lett. 34(8), 1198–1200 (2009).
[Crossref]
[PubMed]
X. Sun, J. Liu, L. C. Kimerling, J. Michel, and T. L. Koch, “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si,” Appl. Phys. Lett. 95(1), 011911 (2009).
[Crossref]
J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, “Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si,” Opt. Express 15(18), 11272–11277 (2007).
[Crossref]
[PubMed]
D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications,” Appl. Phys. Lett. 84(6), 906–908 (2004).
[Crossref]
T.-H. Cheng, K.-L. Peng, C.-Y. Ko, C.-Y. Chen, H.-S. Lan, Y.-R. Wu, C. W. Liu, and H.-H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition,” Appl. Phys. Lett. 96(21), 211108 (2010).
[Crossref]
X. Sun, J. Liu, L. C. Kimerling, J. Michel, and T. L. Koch, “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si,” Appl. Phys. Lett. 95(1), 011911 (2009).
[Crossref]
J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, “Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si,” Opt. Express 15(18), 11272–11277 (2007).
[Crossref]
[PubMed]
M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Débarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94(19), 191107 (2009).
[Crossref]
G. Grzybowski, R. Roucka, J. Mathews, L. Jiang, R. T. Beeler, J. Kouvetakis, and J. Menendez, “Direct versus indirect optical recombination in Ge films grown on Si substrate,” Phys. Rev. B 84(20), 205307 (2011).
[Crossref]
C. O. Chui, L. Kulig, J. Moran, W. Tsai, and K. C. Saraswat, “Germanium n-type shallow junction activation dependences,” Appl. Phys. Lett. 87(9), 091909 (2005).
[Crossref]
T. H. Loh, H. S. Nguyen, C. H. Tung, A. D. Trigg, G. Q. Lo, N. Balasubramanian, D. L. Kwong, and S. Tripathy, “Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition,” Appl. Phys. Lett. 90(9), 092108 (2007).
[Crossref]
K.-W. Ang, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Low voltage and high responsivity germanium bipolar phototransistor for optical detections in the near-infrared regime,” IEEE Electron Device Lett. 29(10), 1124–1127 (2008).
[Crossref]
K.-W. Ang, M.-B. Yu, S.-Y. Zhu, K.-T. Chua, G.-Q. Lo, and D.-L. Kwong, “Novel NiGe MSM photodetector featuring asymmetrical Schottky barriers using sulfur Co-implantation and segregation,” IEEE Electron Device Lett. 29(7), 708–711 (2008).
[Crossref]
T.-H. Cheng, K.-L. Peng, C.-Y. Ko, C.-Y. Chen, H.-S. Lan, Y.-R. Wu, C. W. Liu, and H.-H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition,” Appl. Phys. Lett. 96(21), 211108 (2010).
[Crossref]
T.-H. Cheng, K.-L. Peng, C.-Y. Ko, C.-Y. Chen, H.-S. Lan, Y.-R. Wu, C. W. Liu, and H.-H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition,” Appl. Phys. Lett. 96(21), 211108 (2010).
[Crossref]
X. Sun, J. Liu, L. C. Kimerling, J. Michel, and T. L. Koch, “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si,” Appl. Phys. Lett. 95(1), 011911 (2009).
[Crossref]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes,” Opt. Lett. 34(8), 1198–1200 (2009).
[Crossref]
[PubMed]
J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, “Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si,” Opt. Express 15(18), 11272–11277 (2007).
[Crossref]
[PubMed]
D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications,” Appl. Phys. Lett. 84(6), 906–908 (2004).
[Crossref]
T. H. Loh, H. S. Nguyen, C. H. Tung, A. D. Trigg, G. Q. Lo, N. Balasubramanian, D. L. Kwong, and S. Tripathy, “Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition,” Appl. Phys. Lett. 90(9), 092108 (2007).
[Crossref]
K.-W. Ang, M.-B. Yu, S.-Y. Zhu, K.-T. Chua, G.-Q. Lo, and D.-L. Kwong, “Novel NiGe MSM photodetector featuring asymmetrical Schottky barriers using sulfur Co-implantation and segregation,” IEEE Electron Device Lett. 29(7), 708–711 (2008).
[Crossref]
K.-W. Ang, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Low voltage and high responsivity germanium bipolar phototransistor for optical detections in the near-infrared regime,” IEEE Electron Device Lett. 29(10), 1124–1127 (2008).
[Crossref]
T. H. Loh, H. S. Nguyen, C. H. Tung, A. D. Trigg, G. Q. Lo, N. Balasubramanian, D. L. Kwong, and S. Tripathy, “Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition,” Appl. Phys. Lett. 90(9), 092108 (2007).
[Crossref]
G. Grzybowski, R. Roucka, J. Mathews, L. Jiang, R. T. Beeler, J. Kouvetakis, and J. Menendez, “Direct versus indirect optical recombination in Ge films grown on Si substrate,” Phys. Rev. B 84(20), 205307 (2011).
[Crossref]
A. Chroneos, D. Skarlatos, C. Tsamis, A. Christofi, D. S. McPhail, and R. Hung, “Implantation and diffusion of phosphorous in germanium,” Mater. Sci. Semicond. Process. 9(4-5), 640–643 (2006).
[Crossref]
G. Grzybowski, R. Roucka, J. Mathews, L. Jiang, R. T. Beeler, J. Kouvetakis, and J. Menendez, “Direct versus indirect optical recombination in Ge films grown on Si substrate,” Phys. Rev. B 84(20), 205307 (2011).
[Crossref]
X. Sun, J. Liu, L. C. Kimerling, J. Michel, and T. L. Koch, “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si,” Appl. Phys. Lett. 95(1), 011911 (2009).
[Crossref]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes,” Opt. Lett. 34(8), 1198–1200 (2009).
[Crossref]
[PubMed]
J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, “Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si,” Opt. Express 15(18), 11272–11277 (2007).
[Crossref]
[PubMed]
D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications,” Appl. Phys. Lett. 84(6), 906–908 (2004).
[Crossref]
C. O. Chui, L. Kulig, J. Moran, W. Tsai, and K. C. Saraswat, “Germanium n-type shallow junction activation dependences,” Appl. Phys. Lett. 87(9), 091909 (2005).
[Crossref]
M. El Kurdi, T. Kociniewski, T.-P. Ngo, J. Boulmer, D. Débarre, P. Boucaud, J. F. Damlencourt, O. Kermarrec, and D. Bensahel, “Enhanced photoluminescence of heavily n-doped germanium,” Appl. Phys. Lett. 94(19), 191107 (2009).
[Crossref]
T. H. Loh, H. S. Nguyen, C. H. Tung, A. D. Trigg, G. Q. Lo, N. Balasubramanian, D. L. Kwong, and S. Tripathy, “Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition,” Appl. Phys. Lett. 90(9), 092108 (2007).
[Crossref]
J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, “Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si,” Opt. Express 15(18), 11272–11277 (2007).
[Crossref]
[PubMed]
T.-H. Cheng, K.-L. Peng, C.-Y. Ko, C.-Y. Chen, H.-S. Lan, Y.-R. Wu, C. W. Liu, and H.-H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition,” Appl. Phys. Lett. 96(21), 211108 (2010).
[Crossref]
C. O. Chui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, “Activation and diffusion studies of ion-implanted p and n dopants in germanium,” Appl. Phys. Lett. 83(16), 3275–3277 (2003).
[Crossref]
F. Cerdeira, C. Buchenauer, F. Pollak, and M. Cardona, “Stress-induced shifts of first-order Raman frequencies of diamond- and Zinc-blende-type semiconductors,” Phys. Rev. B 5(2), 580–593 (1972).
[Crossref]
C. H. Poon, L. S. Tan, B. J. Cho, and A. Y. Du, “Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing,” J. Electrochem. Soc. 152(12), G895–G899 (2005).
[Crossref]
G. Grzybowski, R. Roucka, J. Mathews, L. Jiang, R. T. Beeler, J. Kouvetakis, and J. Menendez, “Direct versus indirect optical recombination in Ge films grown on Si substrate,” Phys. Rev. B 84(20), 205307 (2011).
[Crossref]
C. O. Chui, L. Kulig, J. Moran, W. Tsai, and K. C. Saraswat, “Germanium n-type shallow junction activation dependences,” Appl. Phys. Lett. 87(9), 091909 (2005).
[Crossref]
C. O. Chui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, “Activation and diffusion studies of ion-implanted p and n dopants in germanium,” Appl. Phys. Lett. 83(16), 3275–3277 (2003).
[Crossref]
A. Chroneos, D. Skarlatos, C. Tsamis, A. Christofi, D. S. McPhail, and R. Hung, “Implantation and diffusion of phosphorous in germanium,” Mater. Sci. Semicond. Process. 9(4-5), 640–643 (2006).
[Crossref]
X. Sun, J. Liu, L. C. Kimerling, J. Michel, and T. L. Koch, “Direct gap photoluminescence of n-type tensile-strained Ge-on-Si,” Appl. Phys. Lett. 95(1), 011911 (2009).
[Crossref]
X. Sun, J. Liu, L. C. Kimerling, and J. Michel, “Room-temperature direct bandgap electroluminesence from Ge-on-Si light-emitting diodes,” Opt. Lett. 34(8), 1198–1200 (2009).
[Crossref]
[PubMed]
J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, “Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si,” Opt. Express 15(18), 11272–11277 (2007).
[Crossref]
[PubMed]
S. M. Sze and J. C. Irvin, “Resistivity, mobility and impurity levels in GaAs, Ge, and Si at 300 °K,” Solid-State Electron. 11(6), 599–602 (1968).
[Crossref]
C. H. Poon, L. S. Tan, B. J. Cho, and A. Y. Du, “Dopant loss mechanism in n+/p germanium junctions during rapid thermal annealing,” J. Electrochem. Soc. 152(12), G895–G899 (2005).
[Crossref]
T. H. Loh, H. S. Nguyen, C. H. Tung, A. D. Trigg, G. Q. Lo, N. Balasubramanian, D. L. Kwong, and S. Tripathy, “Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition,” Appl. Phys. Lett. 90(9), 092108 (2007).
[Crossref]
T. H. Loh, H. S. Nguyen, C. H. Tung, A. D. Trigg, G. Q. Lo, N. Balasubramanian, D. L. Kwong, and S. Tripathy, “Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition,” Appl. Phys. Lett. 90(9), 092108 (2007).
[Crossref]
C. O. Chui, L. Kulig, J. Moran, W. Tsai, and K. C. Saraswat, “Germanium n-type shallow junction activation dependences,” Appl. Phys. Lett. 87(9), 091909 (2005).
[Crossref]
A. Chroneos, D. Skarlatos, C. Tsamis, A. Christofi, D. S. McPhail, and R. Hung, “Implantation and diffusion of phosphorous in germanium,” Mater. Sci. Semicond. Process. 9(4-5), 640–643 (2006).
[Crossref]
T.-H. Cheng, K.-L. Peng, C.-Y. Ko, C.-Y. Chen, H.-S. Lan, Y.-R. Wu, C. W. Liu, and H.-H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition,” Appl. Phys. Lett. 96(21), 211108 (2010).
[Crossref]
T. H. Loh, H. S. Nguyen, C. H. Tung, A. D. Trigg, G. Q. Lo, N. Balasubramanian, D. L. Kwong, and S. Tripathy, “Ultrathin low temperature SiGe buffer for the growth of high quality Ge epilayer on Si(100) by ultrahigh vacuum chemical vapor deposition,” Appl. Phys. Lett. 90(9), 092108 (2007).
[Crossref]
D. D. Cannon, J. Liu, Y. Ishikawa, K. Wada, D. T. Danielson, S. Jongthammanurak, J. Michel, and L. C. Kimerling, “Tensile strained epitaxial Ge films on Si(100) substrates with potential application in L-band telecommunications,” Appl. Phys. Lett. 84(6), 906–908 (2004).
[Crossref]
J. Liu, X. Sun, D. Pan, X. Wang, L. C. Kimerling, T. L. Koch, and J. Michel, “Tensile-strained, n-type Ge as a gain medium for monolithic laser integration on Si,” Opt. Express 15(18), 11272–11277 (2007).
[Crossref]
[PubMed]
T.-H. Cheng, K.-L. Peng, C.-Y. Ko, C.-Y. Chen, H.-S. Lan, Y.-R. Wu, C. W. Liu, and H.-H. Tseng, “Strain-enhanced photoluminescence from Ge direct transition,” Appl. Phys. Lett. 96(21), 211108 (2010).
[Crossref]
K.-W. Ang, M.-B. Yu, G.-Q. Lo, and D.-L. Kwong, “Low voltage and high responsivity germanium bipolar phototransistor for optical detections in the near-infrared regime,” IEEE Electron Device Lett. 29(10), 1124–1127 (2008).
[Crossref]
K.-W. Ang, M.-B. Yu, S.-Y. Zhu, K.-T. Chua, G.-Q. Lo, and D.-L. Kwong, “Novel NiGe MSM photodetector featuring asymmetrical Schottky barriers using sulfur Co-implantation and segregation,” IEEE Electron Device Lett. 29(7), 708–711 (2008).
[Crossref]
K.-W. Ang, M.-B. Yu, S.-Y. Zhu, K.-T. Chua, G.-Q. Lo, and D.-L. Kwong, “Novel NiGe MSM photodetector featuring asymmetrical Schottky barriers using sulfur Co-implantation and segregation,” IEEE Electron Device Lett. 29(7), 708–711 (2008).
[Crossref]
C. O. Chui, K. Gopalakrishnan, P. B. Griffin, J. D. Plummer, and K. C. Saraswat, “Activation and diffusion studies of ion-implanted p and n dopants in germanium,” Appl. Phys. Lett. 83(16), 3275–3277 (2003).
[Crossref]
C. O. Chui, L. Kulig, J. Moran, W. Tsai, and K. C. Saraswat, “Germanium n-type shallow junction activation dependences,” Appl. Phys. Lett. 87(9), 091909 (2005).
[Crossref]
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[Crossref]
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