Abstract

We present an investigation of passive and hybrid mode-locking in Fabry-Pérot type two-section InAs/InP(100) quantum dot lasers that show dual wavelength operation. Over the whole current and voltage range for mode-locking of these lasers, the optical output spectra show two distinct lobes. The two lobes provide a coherent bandwidth and are verified to lead to two synchronized optical pulses. The generated optical pulses are elongated in time due to a chirp which shows opposite signs over the two spectral lobes. Self-induced mode-locking in the single-section laser shows that the dual-wavelength spectra correspond to emission from ground state. In the hybrid mode-locking regime, a map of locking range is presented by measuring the values of timing jitter for several values of power and frequency of the external electrical modulating signal. An overview of the systematic behavior of InAs/InP(100) quantum dot mode-locked lasers is presented as conclusion.

© 2012 OSA

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  1. R. Nötzel, S. Anantathanasarn, R. P. J. van Veldhoven, F. W. M. van Otten, T. J. Eijkemans, A. Trampert, B. Satpati, Y. Barbarin, E. A. J. M. Bente, Y.-S. Oei, T. de Vries, E. Geluk, B. Smalbrugge, M. K. Smit, J. H. Wolter, “Self assembled InAs/InP quantum dots for telecom applications in the 1.55 µm wavelength range: wavelength tuning, stacking, polarization control, and lasing,” Jpn. J. Appl. Phys. 45(8B), 6544–6549 (2006).
    [CrossRef]
  2. F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55µm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
    [CrossRef]
  3. B. W. Tilma, M. S. Tahvili, J. Kotani, R. Nötzel, M. K. Smit, E. A. J. M. Bente, “Measurement and analysis of optical gain spectra in 1.6 to 1.8 μm InAs/InP (100) quantum-dot amplifiers,” Opt. Quantum Electron. 41(10), 735–749 (2009).
    [CrossRef]
  4. B. W. Tilma, Y. Jiao, J. Kotani, B. Smalbrugge, H. P. M. M. Ambrosius, P. J. Thijs, X. J. M. Leijtens, R. Ntzel, M. K. Smit, E. A. J. M. Bente, “Integrated tunable quantum-dot laser for optical coherence tomography in the 1.7µm wavelength region,” IEEE J. Quantum Electron. 48(2), 87–98 (2012).
    [CrossRef]
  5. X. Huang, A. Stintz, H. Li, L. F. Lester, J. Cheng, K. J. Malloy, “Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers,” Appl. Phys. Lett. 78(19), 2825–2827 (2001).
    [CrossRef]
  6. E. U. Rafailov, M. A. Cataluna, W. Sibbett, N. D. Il’inskaya, Y. M. Zadiranov, A. E. Zhukov, V. M. Ustinov, D. A. Livshits, A. R. Kovsh, N. N. Ledentsov, “High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser,” Appl. Phys. Lett. 87(8), 081107 (2005).
    [CrossRef]
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    [CrossRef]
  8. M. J. R. Heck, E. A. J. M. Bente, B. Smalbrugge, Y. S. Oei, M. K. Smit, S. Anantathanasarn, R. Nötzel, “Observation of Q-switching and mode-locking in two-section InAs/InP (100) quantum dot lasers around 1.55 mum,” Opt. Express 15(25), 16292–16301 (2007).
    [CrossRef] [PubMed]
  9. M. J. R. Heck, A. Renault, E. A. J. M. Bente, Y.-S. Oei, M. K. Smit, K. S. E. Eikema, W. Ubachs, S. Anantathanasarn, R. Nötzel, “Passively mode-locked 4.6 and 10.5 GHz quantum dot laser diodes around 1.55 μm with large operating regime,” IEEE J. Sel. Top. Quantum Electron. 15(3), 634–643 (2009).
    [CrossRef]
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  11. J. P. Tourrenc, A. Akrout, K. Merghem, A. Martinez, F. Lelarge, A. Shen, G. H. Duan, A. Ramdane, “Experimental investigation of the timing jitter in self-pulsating quantum-dash lasers operating at 155 µm,” Opt. Express 16(22), 17706–17713 (2008).
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    [CrossRef]
  13. S. Arahira, Y. Ogawa, “Repetition – frequency tuning of monolithic passively mode-locked semiconductor lasers with integrated extended cavities,” IEEE J. Quantum Electron. 33(2), 255–264 (1997).
    [CrossRef]
  14. Z. Zhang, T. Yagi, “Dual-wavelength synchronous operation of a mode-locked Ti:Sapphire laser based on self-spectrum splitting,” Opt. Lett. 18(24), 2126 (1993).
    [CrossRef] [PubMed]
  15. Z. Cong, D. Tang, W. De Tan, J. Zhang, C. Xu, D. Luo, X. Xu, D. Li, J. Xu, X. Zhang, Q. Wang, “Dual-wavelength passively mode-locked Nd:LuYSiO5 laser with SESAM,” Opt. Express 19(5), 3984–3989 (2011).
    [CrossRef] [PubMed]
  16. K. Veselinov, F. Grillot, C. Cornet, J. Even, A. Bekiarski, M. Gioannini, S. Loualiche, “Analysis of the double laser emission occurring in 1.55-µm InAs–InP (113)B quantum-dot lasers,” IEEE J. Sel. Top. Quantum Electron. 43(9), 810–816 (2007).
    [CrossRef]
  17. N. A. Naderi, F. Grillot, K. Yang, J. B. Wright, A. Gin, L. F. Lester, “Two-color multi-section quantum dot distributed feedback laser,” Opt. Express 18(26), 27028–27035 (2010).
    [CrossRef] [PubMed]
  18. F. Grillot, N. A. Naderi, J. B. Wright, R. Raghunathan, M. T. Crowley, L. F. Lester, “A dual-mode quantum dot laser operating in the excited state,” Appl. Phys. Lett. 99(23), 231110 (2011).
    [CrossRef]
  19. S. Breuer, M. Rossetti, W. Elsasser, L. Drzewietzki, P. Bardella, I. Montrosset, M. Krakowski, M. Hopkinson, “Reverse ground-state excited-state transition dynamics in two-section quantum dot semiconductor lasers: mode-locking and state-switching,” Proc. SPIE 7720, 772011, 772011-10 (2010).
    [CrossRef]
  20. M. A. Cataluna, W. Sibbett, D. A. Livshits, J. Weimert, A. R. Kovsh, E. U. Rafailov, “Stable mode locking via ground- or excited-state transitions in a two-section quantum-dot laser,” Appl. Phys. Lett. 89(8), 081124 (2006).
    [CrossRef]
  21. J. Liu, Z. Lu, S. Raymond, P. J. Poole, P. J. Barrios, D. Poitras, “Dual-wavelength 92.5 GHz self-mode-locked InP-based quantum dot laser,” Opt. Lett. 33(15), 1702–1704 (2008).
    [CrossRef] [PubMed]
  22. C. Mesaritakis, C. Simos, H. Simos, I. Krestnikov, D. Syvridis, “Dual ground-state pulse generation from a passively mode-locked InAs/InGaAs quantum dot laser,” Appl. Phys. Lett. 99(14), 141109 (2011).
    [CrossRef]
  23. M. J. R. Heck, E. J. Salumbides, A. Renault, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, R. van Veldhoven, R. Nötzel, K. S. E. Eikema, W. Ubachs, “Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 microm,” Opt. Express 17(20), 18063–18075 (2009).
    [CrossRef] [PubMed]
  24. G. Fiol, D. Arsenijević, D. Bimberg, A. G. Vladimirov, M. Wolfrum, E. A. Viktorov, P. Mandel, “Hybrid mode-locking in a 40 GHz monolithic quantum dot laser,” Appl. Phys. Lett. 96(1), 011104 (2010).
    [CrossRef]
  25. K. Sato, “Optical pulse generation using Fabry–Pérot lasers under continuous-wave operation,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1288–1293 (2003).
    [CrossRef]
  26. W. Yang, N. J. Sauer, P. G. Bernasconi, L. Zhang, “Self-mode-locked single-section Fabry-Perot semiconductor lasers at 1.56 microm,” Appl. Opt. 46(1), 113–116 (2007).
    [CrossRef] [PubMed]
  27. Z. G. Lu, J. R. Liu, P. J. Poole, S. Raymond, P. J. Barrios, D. Poitras, G. Pakulski, P. Grant, D. Roy-Guay, “An L-band monolithic InAs/InP quantum dot mode-locked laser with femtosecond pulses,” Opt. Express 17(16), 13609–13614 (2009).
    [CrossRef] [PubMed]
  28. L. F. Tiemeijer, P. I. Kuindersma, P. J. A. Thijs, G. L. J. Rikken, “Passive FM locking in InGaAsP semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1385–1392 (1989).
    [CrossRef]
  29. Y. Barbarin, E. A. J. M. Bente, M. J. R. Heck, Y. S. Oei, R. Nötzel, M. K. Smit, “Characterization of a 15 GHz integrated bulk InGaAsP passively modelocked ring laser at 1.53microm,” Opt. Express 14(21), 9716–9727 (2006).
    [CrossRef] [PubMed]
  30. M. S. Tahvili, Y. Barbarin, X. J. M. Leijtens, T. de Vries, E. Smalbrugge, J. Bolk, H. P. M. M. Ambrosius, M. K. Smit, E. A. J. M. Bente, “Directional control of optical power in integrated InP/InGaAsP extended cavity mode-locked ring lasers,” Opt. Lett. 36(13), 2462–2464 (2011).
    [CrossRef] [PubMed]
  31. C. Y. Wang, L. Diehl, A. Gordon, C. Jirauschek, F. X. Kärtner, A. Belyanin, D. Bour, S. Corzine, G. Höfler, M. Troccoli, J. Faist, F. Capasso, “Coherent instabilities in a semiconductor laser with fast gain recovery,” Phys. Rev. A 75(3), 031802 (2007).
    [CrossRef]

2012

B. W. Tilma, Y. Jiao, J. Kotani, B. Smalbrugge, H. P. M. M. Ambrosius, P. J. Thijs, X. J. M. Leijtens, R. Ntzel, M. K. Smit, E. A. J. M. Bente, “Integrated tunable quantum-dot laser for optical coherence tomography in the 1.7µm wavelength region,” IEEE J. Quantum Electron. 48(2), 87–98 (2012).
[CrossRef]

2011

F. Grillot, N. A. Naderi, J. B. Wright, R. Raghunathan, M. T. Crowley, L. F. Lester, “A dual-mode quantum dot laser operating in the excited state,” Appl. Phys. Lett. 99(23), 231110 (2011).
[CrossRef]

C. Mesaritakis, C. Simos, H. Simos, I. Krestnikov, D. Syvridis, “Dual ground-state pulse generation from a passively mode-locked InAs/InGaAs quantum dot laser,” Appl. Phys. Lett. 99(14), 141109 (2011).
[CrossRef]

Z. Cong, D. Tang, W. De Tan, J. Zhang, C. Xu, D. Luo, X. Xu, D. Li, J. Xu, X. Zhang, Q. Wang, “Dual-wavelength passively mode-locked Nd:LuYSiO5 laser with SESAM,” Opt. Express 19(5), 3984–3989 (2011).
[CrossRef] [PubMed]

M. S. Tahvili, Y. Barbarin, X. J. M. Leijtens, T. de Vries, E. Smalbrugge, J. Bolk, H. P. M. M. Ambrosius, M. K. Smit, E. A. J. M. Bente, “Directional control of optical power in integrated InP/InGaAsP extended cavity mode-locked ring lasers,” Opt. Lett. 36(13), 2462–2464 (2011).
[CrossRef] [PubMed]

2010

N. A. Naderi, F. Grillot, K. Yang, J. B. Wright, A. Gin, L. F. Lester, “Two-color multi-section quantum dot distributed feedback laser,” Opt. Express 18(26), 27028–27035 (2010).
[CrossRef] [PubMed]

G. Fiol, D. Arsenijević, D. Bimberg, A. G. Vladimirov, M. Wolfrum, E. A. Viktorov, P. Mandel, “Hybrid mode-locking in a 40 GHz monolithic quantum dot laser,” Appl. Phys. Lett. 96(1), 011104 (2010).
[CrossRef]

S. Breuer, M. Rossetti, W. Elsasser, L. Drzewietzki, P. Bardella, I. Montrosset, M. Krakowski, M. Hopkinson, “Reverse ground-state excited-state transition dynamics in two-section quantum dot semiconductor lasers: mode-locking and state-switching,” Proc. SPIE 7720, 772011, 772011-10 (2010).
[CrossRef]

2009

M. J. R. Heck, A. Renault, E. A. J. M. Bente, Y.-S. Oei, M. K. Smit, K. S. E. Eikema, W. Ubachs, S. Anantathanasarn, R. Nötzel, “Passively mode-locked 4.6 and 10.5 GHz quantum dot laser diodes around 1.55 μm with large operating regime,” IEEE J. Sel. Top. Quantum Electron. 15(3), 634–643 (2009).
[CrossRef]

B. W. Tilma, M. S. Tahvili, J. Kotani, R. Nötzel, M. K. Smit, E. A. J. M. Bente, “Measurement and analysis of optical gain spectra in 1.6 to 1.8 μm InAs/InP (100) quantum-dot amplifiers,” Opt. Quantum Electron. 41(10), 735–749 (2009).
[CrossRef]

M. G. Thompson, A. R. Rae, M. Xia, R. V. Penty, I. H. White, “InGaAs quantum-dot mode-locked laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15(3), 661–672 (2009).
[CrossRef]

Z. G. Lu, J. R. Liu, P. J. Poole, S. Raymond, P. J. Barrios, D. Poitras, G. Pakulski, P. Grant, D. Roy-Guay, “An L-band monolithic InAs/InP quantum dot mode-locked laser with femtosecond pulses,” Opt. Express 17(16), 13609–13614 (2009).
[CrossRef] [PubMed]

M. J. R. Heck, E. J. Salumbides, A. Renault, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, R. van Veldhoven, R. Nötzel, K. S. E. Eikema, W. Ubachs, “Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 microm,” Opt. Express 17(20), 18063–18075 (2009).
[CrossRef] [PubMed]

2008

2007

W. Yang, N. J. Sauer, P. G. Bernasconi, L. Zhang, “Self-mode-locked single-section Fabry-Perot semiconductor lasers at 1.56 microm,” Appl. Opt. 46(1), 113–116 (2007).
[CrossRef] [PubMed]

M. J. R. Heck, E. A. J. M. Bente, B. Smalbrugge, Y. S. Oei, M. K. Smit, S. Anantathanasarn, R. Nötzel, “Observation of Q-switching and mode-locking in two-section InAs/InP (100) quantum dot lasers around 1.55 mum,” Opt. Express 15(25), 16292–16301 (2007).
[CrossRef] [PubMed]

C. Y. Wang, L. Diehl, A. Gordon, C. Jirauschek, F. X. Kärtner, A. Belyanin, D. Bour, S. Corzine, G. Höfler, M. Troccoli, J. Faist, F. Capasso, “Coherent instabilities in a semiconductor laser with fast gain recovery,” Phys. Rev. A 75(3), 031802 (2007).
[CrossRef]

K. Veselinov, F. Grillot, C. Cornet, J. Even, A. Bekiarski, M. Gioannini, S. Loualiche, “Analysis of the double laser emission occurring in 1.55-µm InAs–InP (113)B quantum-dot lasers,” IEEE J. Sel. Top. Quantum Electron. 43(9), 810–816 (2007).
[CrossRef]

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55µm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

2006

R. Nötzel, S. Anantathanasarn, R. P. J. van Veldhoven, F. W. M. van Otten, T. J. Eijkemans, A. Trampert, B. Satpati, Y. Barbarin, E. A. J. M. Bente, Y.-S. Oei, T. de Vries, E. Geluk, B. Smalbrugge, M. K. Smit, J. H. Wolter, “Self assembled InAs/InP quantum dots for telecom applications in the 1.55 µm wavelength range: wavelength tuning, stacking, polarization control, and lasing,” Jpn. J. Appl. Phys. 45(8B), 6544–6549 (2006).
[CrossRef]

S. Anantathanasarn, R. Nötzel, P. J. van Veldhoven, F. W. M. van Otten, Y. Barbarin, G. Servanton, T. de Vries, E. Smalbrugge, E. J. Geluk, T. J. Eijkemans, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, J. H. Wolter, “Lasing of wavelength-tunable (1.55 μm region) InAs/InGaAsP/InP (100) quantum dots grown by metal organic vapor-phase epitaxy,” Appl. Phys. Lett. 89(7), 073115 (2006).
[CrossRef]

M. A. Cataluna, W. Sibbett, D. A. Livshits, J. Weimert, A. R. Kovsh, E. U. Rafailov, “Stable mode locking via ground- or excited-state transitions in a two-section quantum-dot laser,” Appl. Phys. Lett. 89(8), 081124 (2006).
[CrossRef]

Y. Barbarin, E. A. J. M. Bente, M. J. R. Heck, Y. S. Oei, R. Nötzel, M. K. Smit, “Characterization of a 15 GHz integrated bulk InGaAsP passively modelocked ring laser at 1.53microm,” Opt. Express 14(21), 9716–9727 (2006).
[CrossRef] [PubMed]

2005

E. U. Rafailov, M. A. Cataluna, W. Sibbett, N. D. Il’inskaya, Y. M. Zadiranov, A. E. Zhukov, V. M. Ustinov, D. A. Livshits, A. R. Kovsh, N. N. Ledentsov, “High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser,” Appl. Phys. Lett. 87(8), 081107 (2005).
[CrossRef]

2003

K. Sato, “Optical pulse generation using Fabry–Pérot lasers under continuous-wave operation,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1288–1293 (2003).
[CrossRef]

2001

X. Huang, A. Stintz, H. Li, L. F. Lester, J. Cheng, K. J. Malloy, “Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers,” Appl. Phys. Lett. 78(19), 2825–2827 (2001).
[CrossRef]

1997

S. Arahira, Y. Ogawa, “Repetition – frequency tuning of monolithic passively mode-locked semiconductor lasers with integrated extended cavities,” IEEE J. Quantum Electron. 33(2), 255–264 (1997).
[CrossRef]

1993

W. M. Yee, K. A. Shore, “Multimode analysis of self locked FM operation in laser diodes,” IEE Proc.-J: Optoelectron. 140, 21 (1993).

Z. Zhang, T. Yagi, “Dual-wavelength synchronous operation of a mode-locked Ti:Sapphire laser based on self-spectrum splitting,” Opt. Lett. 18(24), 2126 (1993).
[CrossRef] [PubMed]

1989

L. F. Tiemeijer, P. I. Kuindersma, P. J. A. Thijs, G. L. J. Rikken, “Passive FM locking in InGaAsP semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1385–1392 (1989).
[CrossRef]

Accard, A.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55µm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Akrout, A.

Ambrosius, H. P. M. M.

B. W. Tilma, Y. Jiao, J. Kotani, B. Smalbrugge, H. P. M. M. Ambrosius, P. J. Thijs, X. J. M. Leijtens, R. Ntzel, M. K. Smit, E. A. J. M. Bente, “Integrated tunable quantum-dot laser for optical coherence tomography in the 1.7µm wavelength region,” IEEE J. Quantum Electron. 48(2), 87–98 (2012).
[CrossRef]

M. S. Tahvili, Y. Barbarin, X. J. M. Leijtens, T. de Vries, E. Smalbrugge, J. Bolk, H. P. M. M. Ambrosius, M. K. Smit, E. A. J. M. Bente, “Directional control of optical power in integrated InP/InGaAsP extended cavity mode-locked ring lasers,” Opt. Lett. 36(13), 2462–2464 (2011).
[CrossRef] [PubMed]

Anantathanasarn, S.

M. J. R. Heck, A. Renault, E. A. J. M. Bente, Y.-S. Oei, M. K. Smit, K. S. E. Eikema, W. Ubachs, S. Anantathanasarn, R. Nötzel, “Passively mode-locked 4.6 and 10.5 GHz quantum dot laser diodes around 1.55 μm with large operating regime,” IEEE J. Sel. Top. Quantum Electron. 15(3), 634–643 (2009).
[CrossRef]

M. J. R. Heck, E. A. J. M. Bente, B. Smalbrugge, Y. S. Oei, M. K. Smit, S. Anantathanasarn, R. Nötzel, “Observation of Q-switching and mode-locking in two-section InAs/InP (100) quantum dot lasers around 1.55 mum,” Opt. Express 15(25), 16292–16301 (2007).
[CrossRef] [PubMed]

R. Nötzel, S. Anantathanasarn, R. P. J. van Veldhoven, F. W. M. van Otten, T. J. Eijkemans, A. Trampert, B. Satpati, Y. Barbarin, E. A. J. M. Bente, Y.-S. Oei, T. de Vries, E. Geluk, B. Smalbrugge, M. K. Smit, J. H. Wolter, “Self assembled InAs/InP quantum dots for telecom applications in the 1.55 µm wavelength range: wavelength tuning, stacking, polarization control, and lasing,” Jpn. J. Appl. Phys. 45(8B), 6544–6549 (2006).
[CrossRef]

S. Anantathanasarn, R. Nötzel, P. J. van Veldhoven, F. W. M. van Otten, Y. Barbarin, G. Servanton, T. de Vries, E. Smalbrugge, E. J. Geluk, T. J. Eijkemans, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, J. H. Wolter, “Lasing of wavelength-tunable (1.55 μm region) InAs/InGaAsP/InP (100) quantum dots grown by metal organic vapor-phase epitaxy,” Appl. Phys. Lett. 89(7), 073115 (2006).
[CrossRef]

Arahira, S.

S. Arahira, Y. Ogawa, “Repetition – frequency tuning of monolithic passively mode-locked semiconductor lasers with integrated extended cavities,” IEEE J. Quantum Electron. 33(2), 255–264 (1997).
[CrossRef]

Arsenijevic, D.

G. Fiol, D. Arsenijević, D. Bimberg, A. G. Vladimirov, M. Wolfrum, E. A. Viktorov, P. Mandel, “Hybrid mode-locking in a 40 GHz monolithic quantum dot laser,” Appl. Phys. Lett. 96(1), 011104 (2010).
[CrossRef]

Barbarin, Y.

M. S. Tahvili, Y. Barbarin, X. J. M. Leijtens, T. de Vries, E. Smalbrugge, J. Bolk, H. P. M. M. Ambrosius, M. K. Smit, E. A. J. M. Bente, “Directional control of optical power in integrated InP/InGaAsP extended cavity mode-locked ring lasers,” Opt. Lett. 36(13), 2462–2464 (2011).
[CrossRef] [PubMed]

S. Anantathanasarn, R. Nötzel, P. J. van Veldhoven, F. W. M. van Otten, Y. Barbarin, G. Servanton, T. de Vries, E. Smalbrugge, E. J. Geluk, T. J. Eijkemans, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, J. H. Wolter, “Lasing of wavelength-tunable (1.55 μm region) InAs/InGaAsP/InP (100) quantum dots grown by metal organic vapor-phase epitaxy,” Appl. Phys. Lett. 89(7), 073115 (2006).
[CrossRef]

Y. Barbarin, E. A. J. M. Bente, M. J. R. Heck, Y. S. Oei, R. Nötzel, M. K. Smit, “Characterization of a 15 GHz integrated bulk InGaAsP passively modelocked ring laser at 1.53microm,” Opt. Express 14(21), 9716–9727 (2006).
[CrossRef] [PubMed]

R. Nötzel, S. Anantathanasarn, R. P. J. van Veldhoven, F. W. M. van Otten, T. J. Eijkemans, A. Trampert, B. Satpati, Y. Barbarin, E. A. J. M. Bente, Y.-S. Oei, T. de Vries, E. Geluk, B. Smalbrugge, M. K. Smit, J. H. Wolter, “Self assembled InAs/InP quantum dots for telecom applications in the 1.55 µm wavelength range: wavelength tuning, stacking, polarization control, and lasing,” Jpn. J. Appl. Phys. 45(8B), 6544–6549 (2006).
[CrossRef]

Bardella, P.

S. Breuer, M. Rossetti, W. Elsasser, L. Drzewietzki, P. Bardella, I. Montrosset, M. Krakowski, M. Hopkinson, “Reverse ground-state excited-state transition dynamics in two-section quantum dot semiconductor lasers: mode-locking and state-switching,” Proc. SPIE 7720, 772011, 772011-10 (2010).
[CrossRef]

Barrios, P. J.

Bekiarski, A.

K. Veselinov, F. Grillot, C. Cornet, J. Even, A. Bekiarski, M. Gioannini, S. Loualiche, “Analysis of the double laser emission occurring in 1.55-µm InAs–InP (113)B quantum-dot lasers,” IEEE J. Sel. Top. Quantum Electron. 43(9), 810–816 (2007).
[CrossRef]

Belyanin, A.

C. Y. Wang, L. Diehl, A. Gordon, C. Jirauschek, F. X. Kärtner, A. Belyanin, D. Bour, S. Corzine, G. Höfler, M. Troccoli, J. Faist, F. Capasso, “Coherent instabilities in a semiconductor laser with fast gain recovery,” Phys. Rev. A 75(3), 031802 (2007).
[CrossRef]

Bente, E. A. J. M.

B. W. Tilma, Y. Jiao, J. Kotani, B. Smalbrugge, H. P. M. M. Ambrosius, P. J. Thijs, X. J. M. Leijtens, R. Ntzel, M. K. Smit, E. A. J. M. Bente, “Integrated tunable quantum-dot laser for optical coherence tomography in the 1.7µm wavelength region,” IEEE J. Quantum Electron. 48(2), 87–98 (2012).
[CrossRef]

M. S. Tahvili, Y. Barbarin, X. J. M. Leijtens, T. de Vries, E. Smalbrugge, J. Bolk, H. P. M. M. Ambrosius, M. K. Smit, E. A. J. M. Bente, “Directional control of optical power in integrated InP/InGaAsP extended cavity mode-locked ring lasers,” Opt. Lett. 36(13), 2462–2464 (2011).
[CrossRef] [PubMed]

M. J. R. Heck, A. Renault, E. A. J. M. Bente, Y.-S. Oei, M. K. Smit, K. S. E. Eikema, W. Ubachs, S. Anantathanasarn, R. Nötzel, “Passively mode-locked 4.6 and 10.5 GHz quantum dot laser diodes around 1.55 μm with large operating regime,” IEEE J. Sel. Top. Quantum Electron. 15(3), 634–643 (2009).
[CrossRef]

B. W. Tilma, M. S. Tahvili, J. Kotani, R. Nötzel, M. K. Smit, E. A. J. M. Bente, “Measurement and analysis of optical gain spectra in 1.6 to 1.8 μm InAs/InP (100) quantum-dot amplifiers,” Opt. Quantum Electron. 41(10), 735–749 (2009).
[CrossRef]

M. J. R. Heck, E. J. Salumbides, A. Renault, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, R. van Veldhoven, R. Nötzel, K. S. E. Eikema, W. Ubachs, “Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 microm,” Opt. Express 17(20), 18063–18075 (2009).
[CrossRef] [PubMed]

M. J. R. Heck, E. A. J. M. Bente, B. Smalbrugge, Y. S. Oei, M. K. Smit, S. Anantathanasarn, R. Nötzel, “Observation of Q-switching and mode-locking in two-section InAs/InP (100) quantum dot lasers around 1.55 mum,” Opt. Express 15(25), 16292–16301 (2007).
[CrossRef] [PubMed]

R. Nötzel, S. Anantathanasarn, R. P. J. van Veldhoven, F. W. M. van Otten, T. J. Eijkemans, A. Trampert, B. Satpati, Y. Barbarin, E. A. J. M. Bente, Y.-S. Oei, T. de Vries, E. Geluk, B. Smalbrugge, M. K. Smit, J. H. Wolter, “Self assembled InAs/InP quantum dots for telecom applications in the 1.55 µm wavelength range: wavelength tuning, stacking, polarization control, and lasing,” Jpn. J. Appl. Phys. 45(8B), 6544–6549 (2006).
[CrossRef]

Y. Barbarin, E. A. J. M. Bente, M. J. R. Heck, Y. S. Oei, R. Nötzel, M. K. Smit, “Characterization of a 15 GHz integrated bulk InGaAsP passively modelocked ring laser at 1.53microm,” Opt. Express 14(21), 9716–9727 (2006).
[CrossRef] [PubMed]

S. Anantathanasarn, R. Nötzel, P. J. van Veldhoven, F. W. M. van Otten, Y. Barbarin, G. Servanton, T. de Vries, E. Smalbrugge, E. J. Geluk, T. J. Eijkemans, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, J. H. Wolter, “Lasing of wavelength-tunable (1.55 μm region) InAs/InGaAsP/InP (100) quantum dots grown by metal organic vapor-phase epitaxy,” Appl. Phys. Lett. 89(7), 073115 (2006).
[CrossRef]

Bernasconi, P. G.

Bimberg, D.

G. Fiol, D. Arsenijević, D. Bimberg, A. G. Vladimirov, M. Wolfrum, E. A. Viktorov, P. Mandel, “Hybrid mode-locking in a 40 GHz monolithic quantum dot laser,” Appl. Phys. Lett. 96(1), 011104 (2010).
[CrossRef]

Bolk, J.

Bour, D.

C. Y. Wang, L. Diehl, A. Gordon, C. Jirauschek, F. X. Kärtner, A. Belyanin, D. Bour, S. Corzine, G. Höfler, M. Troccoli, J. Faist, F. Capasso, “Coherent instabilities in a semiconductor laser with fast gain recovery,” Phys. Rev. A 75(3), 031802 (2007).
[CrossRef]

Brenot, R.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55µm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Breuer, S.

S. Breuer, M. Rossetti, W. Elsasser, L. Drzewietzki, P. Bardella, I. Montrosset, M. Krakowski, M. Hopkinson, “Reverse ground-state excited-state transition dynamics in two-section quantum dot semiconductor lasers: mode-locking and state-switching,” Proc. SPIE 7720, 772011, 772011-10 (2010).
[CrossRef]

Capasso, F.

C. Y. Wang, L. Diehl, A. Gordon, C. Jirauschek, F. X. Kärtner, A. Belyanin, D. Bour, S. Corzine, G. Höfler, M. Troccoli, J. Faist, F. Capasso, “Coherent instabilities in a semiconductor laser with fast gain recovery,” Phys. Rev. A 75(3), 031802 (2007).
[CrossRef]

Cataluna, M. A.

M. A. Cataluna, W. Sibbett, D. A. Livshits, J. Weimert, A. R. Kovsh, E. U. Rafailov, “Stable mode locking via ground- or excited-state transitions in a two-section quantum-dot laser,” Appl. Phys. Lett. 89(8), 081124 (2006).
[CrossRef]

E. U. Rafailov, M. A. Cataluna, W. Sibbett, N. D. Il’inskaya, Y. M. Zadiranov, A. E. Zhukov, V. M. Ustinov, D. A. Livshits, A. R. Kovsh, N. N. Ledentsov, “High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser,” Appl. Phys. Lett. 87(8), 081107 (2005).
[CrossRef]

Cheng, J.

X. Huang, A. Stintz, H. Li, L. F. Lester, J. Cheng, K. J. Malloy, “Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers,” Appl. Phys. Lett. 78(19), 2825–2827 (2001).
[CrossRef]

Cong, Z.

Cornet, C.

K. Veselinov, F. Grillot, C. Cornet, J. Even, A. Bekiarski, M. Gioannini, S. Loualiche, “Analysis of the double laser emission occurring in 1.55-µm InAs–InP (113)B quantum-dot lasers,” IEEE J. Sel. Top. Quantum Electron. 43(9), 810–816 (2007).
[CrossRef]

Corzine, S.

C. Y. Wang, L. Diehl, A. Gordon, C. Jirauschek, F. X. Kärtner, A. Belyanin, D. Bour, S. Corzine, G. Höfler, M. Troccoli, J. Faist, F. Capasso, “Coherent instabilities in a semiconductor laser with fast gain recovery,” Phys. Rev. A 75(3), 031802 (2007).
[CrossRef]

Crowley, M. T.

F. Grillot, N. A. Naderi, J. B. Wright, R. Raghunathan, M. T. Crowley, L. F. Lester, “A dual-mode quantum dot laser operating in the excited state,” Appl. Phys. Lett. 99(23), 231110 (2011).
[CrossRef]

Dagens, B.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55µm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

De Tan, W.

de Vries, T.

M. S. Tahvili, Y. Barbarin, X. J. M. Leijtens, T. de Vries, E. Smalbrugge, J. Bolk, H. P. M. M. Ambrosius, M. K. Smit, E. A. J. M. Bente, “Directional control of optical power in integrated InP/InGaAsP extended cavity mode-locked ring lasers,” Opt. Lett. 36(13), 2462–2464 (2011).
[CrossRef] [PubMed]

R. Nötzel, S. Anantathanasarn, R. P. J. van Veldhoven, F. W. M. van Otten, T. J. Eijkemans, A. Trampert, B. Satpati, Y. Barbarin, E. A. J. M. Bente, Y.-S. Oei, T. de Vries, E. Geluk, B. Smalbrugge, M. K. Smit, J. H. Wolter, “Self assembled InAs/InP quantum dots for telecom applications in the 1.55 µm wavelength range: wavelength tuning, stacking, polarization control, and lasing,” Jpn. J. Appl. Phys. 45(8B), 6544–6549 (2006).
[CrossRef]

S. Anantathanasarn, R. Nötzel, P. J. van Veldhoven, F. W. M. van Otten, Y. Barbarin, G. Servanton, T. de Vries, E. Smalbrugge, E. J. Geluk, T. J. Eijkemans, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, J. H. Wolter, “Lasing of wavelength-tunable (1.55 μm region) InAs/InGaAsP/InP (100) quantum dots grown by metal organic vapor-phase epitaxy,” Appl. Phys. Lett. 89(7), 073115 (2006).
[CrossRef]

Derouin, E.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55µm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Diehl, L.

C. Y. Wang, L. Diehl, A. Gordon, C. Jirauschek, F. X. Kärtner, A. Belyanin, D. Bour, S. Corzine, G. Höfler, M. Troccoli, J. Faist, F. Capasso, “Coherent instabilities in a semiconductor laser with fast gain recovery,” Phys. Rev. A 75(3), 031802 (2007).
[CrossRef]

Dijk, F.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55µm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Drisse, O.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55µm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Drzewietzki, L.

S. Breuer, M. Rossetti, W. Elsasser, L. Drzewietzki, P. Bardella, I. Montrosset, M. Krakowski, M. Hopkinson, “Reverse ground-state excited-state transition dynamics in two-section quantum dot semiconductor lasers: mode-locking and state-switching,” Proc. SPIE 7720, 772011, 772011-10 (2010).
[CrossRef]

Duan, G. H.

Duan, G.-H.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55µm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Eijkemans, T. J.

R. Nötzel, S. Anantathanasarn, R. P. J. van Veldhoven, F. W. M. van Otten, T. J. Eijkemans, A. Trampert, B. Satpati, Y. Barbarin, E. A. J. M. Bente, Y.-S. Oei, T. de Vries, E. Geluk, B. Smalbrugge, M. K. Smit, J. H. Wolter, “Self assembled InAs/InP quantum dots for telecom applications in the 1.55 µm wavelength range: wavelength tuning, stacking, polarization control, and lasing,” Jpn. J. Appl. Phys. 45(8B), 6544–6549 (2006).
[CrossRef]

S. Anantathanasarn, R. Nötzel, P. J. van Veldhoven, F. W. M. van Otten, Y. Barbarin, G. Servanton, T. de Vries, E. Smalbrugge, E. J. Geluk, T. J. Eijkemans, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, J. H. Wolter, “Lasing of wavelength-tunable (1.55 μm region) InAs/InGaAsP/InP (100) quantum dots grown by metal organic vapor-phase epitaxy,” Appl. Phys. Lett. 89(7), 073115 (2006).
[CrossRef]

Eikema, K. S. E.

M. J. R. Heck, E. J. Salumbides, A. Renault, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, R. van Veldhoven, R. Nötzel, K. S. E. Eikema, W. Ubachs, “Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 microm,” Opt. Express 17(20), 18063–18075 (2009).
[CrossRef] [PubMed]

M. J. R. Heck, A. Renault, E. A. J. M. Bente, Y.-S. Oei, M. K. Smit, K. S. E. Eikema, W. Ubachs, S. Anantathanasarn, R. Nötzel, “Passively mode-locked 4.6 and 10.5 GHz quantum dot laser diodes around 1.55 μm with large operating regime,” IEEE J. Sel. Top. Quantum Electron. 15(3), 634–643 (2009).
[CrossRef]

Elsasser, W.

S. Breuer, M. Rossetti, W. Elsasser, L. Drzewietzki, P. Bardella, I. Montrosset, M. Krakowski, M. Hopkinson, “Reverse ground-state excited-state transition dynamics in two-section quantum dot semiconductor lasers: mode-locking and state-switching,” Proc. SPIE 7720, 772011, 772011-10 (2010).
[CrossRef]

Even, J.

K. Veselinov, F. Grillot, C. Cornet, J. Even, A. Bekiarski, M. Gioannini, S. Loualiche, “Analysis of the double laser emission occurring in 1.55-µm InAs–InP (113)B quantum-dot lasers,” IEEE J. Sel. Top. Quantum Electron. 43(9), 810–816 (2007).
[CrossRef]

Faist, J.

C. Y. Wang, L. Diehl, A. Gordon, C. Jirauschek, F. X. Kärtner, A. Belyanin, D. Bour, S. Corzine, G. Höfler, M. Troccoli, J. Faist, F. Capasso, “Coherent instabilities in a semiconductor laser with fast gain recovery,” Phys. Rev. A 75(3), 031802 (2007).
[CrossRef]

Fiol, G.

G. Fiol, D. Arsenijević, D. Bimberg, A. G. Vladimirov, M. Wolfrum, E. A. Viktorov, P. Mandel, “Hybrid mode-locking in a 40 GHz monolithic quantum dot laser,” Appl. Phys. Lett. 96(1), 011104 (2010).
[CrossRef]

Geluk, E.

R. Nötzel, S. Anantathanasarn, R. P. J. van Veldhoven, F. W. M. van Otten, T. J. Eijkemans, A. Trampert, B. Satpati, Y. Barbarin, E. A. J. M. Bente, Y.-S. Oei, T. de Vries, E. Geluk, B. Smalbrugge, M. K. Smit, J. H. Wolter, “Self assembled InAs/InP quantum dots for telecom applications in the 1.55 µm wavelength range: wavelength tuning, stacking, polarization control, and lasing,” Jpn. J. Appl. Phys. 45(8B), 6544–6549 (2006).
[CrossRef]

Geluk, E. J.

S. Anantathanasarn, R. Nötzel, P. J. van Veldhoven, F. W. M. van Otten, Y. Barbarin, G. Servanton, T. de Vries, E. Smalbrugge, E. J. Geluk, T. J. Eijkemans, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, J. H. Wolter, “Lasing of wavelength-tunable (1.55 μm region) InAs/InGaAsP/InP (100) quantum dots grown by metal organic vapor-phase epitaxy,” Appl. Phys. Lett. 89(7), 073115 (2006).
[CrossRef]

Gin, A.

Gioannini, M.

K. Veselinov, F. Grillot, C. Cornet, J. Even, A. Bekiarski, M. Gioannini, S. Loualiche, “Analysis of the double laser emission occurring in 1.55-µm InAs–InP (113)B quantum-dot lasers,” IEEE J. Sel. Top. Quantum Electron. 43(9), 810–816 (2007).
[CrossRef]

Gordon, A.

C. Y. Wang, L. Diehl, A. Gordon, C. Jirauschek, F. X. Kärtner, A. Belyanin, D. Bour, S. Corzine, G. Höfler, M. Troccoli, J. Faist, F. Capasso, “Coherent instabilities in a semiconductor laser with fast gain recovery,” Phys. Rev. A 75(3), 031802 (2007).
[CrossRef]

Gouezigou, O. L.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55µm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Grant, P.

Grillot, F.

F. Grillot, N. A. Naderi, J. B. Wright, R. Raghunathan, M. T. Crowley, L. F. Lester, “A dual-mode quantum dot laser operating in the excited state,” Appl. Phys. Lett. 99(23), 231110 (2011).
[CrossRef]

N. A. Naderi, F. Grillot, K. Yang, J. B. Wright, A. Gin, L. F. Lester, “Two-color multi-section quantum dot distributed feedback laser,” Opt. Express 18(26), 27028–27035 (2010).
[CrossRef] [PubMed]

K. Veselinov, F. Grillot, C. Cornet, J. Even, A. Bekiarski, M. Gioannini, S. Loualiche, “Analysis of the double laser emission occurring in 1.55-µm InAs–InP (113)B quantum-dot lasers,” IEEE J. Sel. Top. Quantum Electron. 43(9), 810–816 (2007).
[CrossRef]

Heck, M. J. R.

Höfler, G.

C. Y. Wang, L. Diehl, A. Gordon, C. Jirauschek, F. X. Kärtner, A. Belyanin, D. Bour, S. Corzine, G. Höfler, M. Troccoli, J. Faist, F. Capasso, “Coherent instabilities in a semiconductor laser with fast gain recovery,” Phys. Rev. A 75(3), 031802 (2007).
[CrossRef]

Hopkinson, M.

S. Breuer, M. Rossetti, W. Elsasser, L. Drzewietzki, P. Bardella, I. Montrosset, M. Krakowski, M. Hopkinson, “Reverse ground-state excited-state transition dynamics in two-section quantum dot semiconductor lasers: mode-locking and state-switching,” Proc. SPIE 7720, 772011, 772011-10 (2010).
[CrossRef]

Huang, X.

X. Huang, A. Stintz, H. Li, L. F. Lester, J. Cheng, K. J. Malloy, “Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers,” Appl. Phys. Lett. 78(19), 2825–2827 (2001).
[CrossRef]

Il’inskaya, N. D.

E. U. Rafailov, M. A. Cataluna, W. Sibbett, N. D. Il’inskaya, Y. M. Zadiranov, A. E. Zhukov, V. M. Ustinov, D. A. Livshits, A. R. Kovsh, N. N. Ledentsov, “High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser,” Appl. Phys. Lett. 87(8), 081107 (2005).
[CrossRef]

Jiao, Y.

B. W. Tilma, Y. Jiao, J. Kotani, B. Smalbrugge, H. P. M. M. Ambrosius, P. J. Thijs, X. J. M. Leijtens, R. Ntzel, M. K. Smit, E. A. J. M. Bente, “Integrated tunable quantum-dot laser for optical coherence tomography in the 1.7µm wavelength region,” IEEE J. Quantum Electron. 48(2), 87–98 (2012).
[CrossRef]

Jirauschek, C.

C. Y. Wang, L. Diehl, A. Gordon, C. Jirauschek, F. X. Kärtner, A. Belyanin, D. Bour, S. Corzine, G. Höfler, M. Troccoli, J. Faist, F. Capasso, “Coherent instabilities in a semiconductor laser with fast gain recovery,” Phys. Rev. A 75(3), 031802 (2007).
[CrossRef]

Kärtner, F. X.

C. Y. Wang, L. Diehl, A. Gordon, C. Jirauschek, F. X. Kärtner, A. Belyanin, D. Bour, S. Corzine, G. Höfler, M. Troccoli, J. Faist, F. Capasso, “Coherent instabilities in a semiconductor laser with fast gain recovery,” Phys. Rev. A 75(3), 031802 (2007).
[CrossRef]

Kotani, J.

B. W. Tilma, Y. Jiao, J. Kotani, B. Smalbrugge, H. P. M. M. Ambrosius, P. J. Thijs, X. J. M. Leijtens, R. Ntzel, M. K. Smit, E. A. J. M. Bente, “Integrated tunable quantum-dot laser for optical coherence tomography in the 1.7µm wavelength region,” IEEE J. Quantum Electron. 48(2), 87–98 (2012).
[CrossRef]

B. W. Tilma, M. S. Tahvili, J. Kotani, R. Nötzel, M. K. Smit, E. A. J. M. Bente, “Measurement and analysis of optical gain spectra in 1.6 to 1.8 μm InAs/InP (100) quantum-dot amplifiers,” Opt. Quantum Electron. 41(10), 735–749 (2009).
[CrossRef]

Kovsh, A. R.

M. A. Cataluna, W. Sibbett, D. A. Livshits, J. Weimert, A. R. Kovsh, E. U. Rafailov, “Stable mode locking via ground- or excited-state transitions in a two-section quantum-dot laser,” Appl. Phys. Lett. 89(8), 081124 (2006).
[CrossRef]

E. U. Rafailov, M. A. Cataluna, W. Sibbett, N. D. Il’inskaya, Y. M. Zadiranov, A. E. Zhukov, V. M. Ustinov, D. A. Livshits, A. R. Kovsh, N. N. Ledentsov, “High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser,” Appl. Phys. Lett. 87(8), 081107 (2005).
[CrossRef]

Krakowski, M.

S. Breuer, M. Rossetti, W. Elsasser, L. Drzewietzki, P. Bardella, I. Montrosset, M. Krakowski, M. Hopkinson, “Reverse ground-state excited-state transition dynamics in two-section quantum dot semiconductor lasers: mode-locking and state-switching,” Proc. SPIE 7720, 772011, 772011-10 (2010).
[CrossRef]

Krestnikov, I.

C. Mesaritakis, C. Simos, H. Simos, I. Krestnikov, D. Syvridis, “Dual ground-state pulse generation from a passively mode-locked InAs/InGaAs quantum dot laser,” Appl. Phys. Lett. 99(14), 141109 (2011).
[CrossRef]

Kuindersma, P. I.

L. F. Tiemeijer, P. I. Kuindersma, P. J. A. Thijs, G. L. J. Rikken, “Passive FM locking in InGaAsP semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1385–1392 (1989).
[CrossRef]

Landreau, J.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55µm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

Ledentsov, N. N.

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B. W. Tilma, Y. Jiao, J. Kotani, B. Smalbrugge, H. P. M. M. Ambrosius, P. J. Thijs, X. J. M. Leijtens, R. Ntzel, M. K. Smit, E. A. J. M. Bente, “Integrated tunable quantum-dot laser for optical coherence tomography in the 1.7µm wavelength region,” IEEE J. Quantum Electron. 48(2), 87–98 (2012).
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F. Grillot, N. A. Naderi, J. B. Wright, R. Raghunathan, M. T. Crowley, L. F. Lester, “A dual-mode quantum dot laser operating in the excited state,” Appl. Phys. Lett. 99(23), 231110 (2011).
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Li, H.

X. Huang, A. Stintz, H. Li, L. F. Lester, J. Cheng, K. J. Malloy, “Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers,” Appl. Phys. Lett. 78(19), 2825–2827 (2001).
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Liu, J. R.

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E. U. Rafailov, M. A. Cataluna, W. Sibbett, N. D. Il’inskaya, Y. M. Zadiranov, A. E. Zhukov, V. M. Ustinov, D. A. Livshits, A. R. Kovsh, N. N. Ledentsov, “High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser,” Appl. Phys. Lett. 87(8), 081107 (2005).
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X. Huang, A. Stintz, H. Li, L. F. Lester, J. Cheng, K. J. Malloy, “Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers,” Appl. Phys. Lett. 78(19), 2825–2827 (2001).
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F. Grillot, N. A. Naderi, J. B. Wright, R. Raghunathan, M. T. Crowley, L. F. Lester, “A dual-mode quantum dot laser operating in the excited state,” Appl. Phys. Lett. 99(23), 231110 (2011).
[CrossRef]

N. A. Naderi, F. Grillot, K. Yang, J. B. Wright, A. Gin, L. F. Lester, “Two-color multi-section quantum dot distributed feedback laser,” Opt. Express 18(26), 27028–27035 (2010).
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M. J. R. Heck, A. Renault, E. A. J. M. Bente, Y.-S. Oei, M. K. Smit, K. S. E. Eikema, W. Ubachs, S. Anantathanasarn, R. Nötzel, “Passively mode-locked 4.6 and 10.5 GHz quantum dot laser diodes around 1.55 μm with large operating regime,” IEEE J. Sel. Top. Quantum Electron. 15(3), 634–643 (2009).
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M. J. R. Heck, E. J. Salumbides, A. Renault, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, R. van Veldhoven, R. Nötzel, K. S. E. Eikema, W. Ubachs, “Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 microm,” Opt. Express 17(20), 18063–18075 (2009).
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M. J. R. Heck, E. A. J. M. Bente, B. Smalbrugge, Y. S. Oei, M. K. Smit, S. Anantathanasarn, R. Nötzel, “Observation of Q-switching and mode-locking in two-section InAs/InP (100) quantum dot lasers around 1.55 mum,” Opt. Express 15(25), 16292–16301 (2007).
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Oei, Y.-S.

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R. Nötzel, S. Anantathanasarn, R. P. J. van Veldhoven, F. W. M. van Otten, T. J. Eijkemans, A. Trampert, B. Satpati, Y. Barbarin, E. A. J. M. Bente, Y.-S. Oei, T. de Vries, E. Geluk, B. Smalbrugge, M. K. Smit, J. H. Wolter, “Self assembled InAs/InP quantum dots for telecom applications in the 1.55 µm wavelength range: wavelength tuning, stacking, polarization control, and lasing,” Jpn. J. Appl. Phys. 45(8B), 6544–6549 (2006).
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Pommereau, F.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55µm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
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Provost, J.-G.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55µm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
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M. G. Thompson, A. R. Rae, M. Xia, R. V. Penty, I. H. White, “InGaAs quantum-dot mode-locked laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15(3), 661–672 (2009).
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Rafailov, E. U.

M. A. Cataluna, W. Sibbett, D. A. Livshits, J. Weimert, A. R. Kovsh, E. U. Rafailov, “Stable mode locking via ground- or excited-state transitions in a two-section quantum-dot laser,” Appl. Phys. Lett. 89(8), 081124 (2006).
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E. U. Rafailov, M. A. Cataluna, W. Sibbett, N. D. Il’inskaya, Y. M. Zadiranov, A. E. Zhukov, V. M. Ustinov, D. A. Livshits, A. R. Kovsh, N. N. Ledentsov, “High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser,” Appl. Phys. Lett. 87(8), 081107 (2005).
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Raghunathan, R.

F. Grillot, N. A. Naderi, J. B. Wright, R. Raghunathan, M. T. Crowley, L. F. Lester, “A dual-mode quantum dot laser operating in the excited state,” Appl. Phys. Lett. 99(23), 231110 (2011).
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Raymond, S.

Renaudier, J.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55µm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
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[CrossRef]

M. J. R. Heck, E. J. Salumbides, A. Renault, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, R. van Veldhoven, R. Nötzel, K. S. E. Eikema, W. Ubachs, “Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 microm,” Opt. Express 17(20), 18063–18075 (2009).
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L. F. Tiemeijer, P. I. Kuindersma, P. J. A. Thijs, G. L. J. Rikken, “Passive FM locking in InGaAsP semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1385–1392 (1989).
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S. Breuer, M. Rossetti, W. Elsasser, L. Drzewietzki, P. Bardella, I. Montrosset, M. Krakowski, M. Hopkinson, “Reverse ground-state excited-state transition dynamics in two-section quantum dot semiconductor lasers: mode-locking and state-switching,” Proc. SPIE 7720, 772011, 772011-10 (2010).
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F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55µm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
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Salumbides, E. J.

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K. Sato, “Optical pulse generation using Fabry–Pérot lasers under continuous-wave operation,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1288–1293 (2003).
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R. Nötzel, S. Anantathanasarn, R. P. J. van Veldhoven, F. W. M. van Otten, T. J. Eijkemans, A. Trampert, B. Satpati, Y. Barbarin, E. A. J. M. Bente, Y.-S. Oei, T. de Vries, E. Geluk, B. Smalbrugge, M. K. Smit, J. H. Wolter, “Self assembled InAs/InP quantum dots for telecom applications in the 1.55 µm wavelength range: wavelength tuning, stacking, polarization control, and lasing,” Jpn. J. Appl. Phys. 45(8B), 6544–6549 (2006).
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Servanton, G.

S. Anantathanasarn, R. Nötzel, P. J. van Veldhoven, F. W. M. van Otten, Y. Barbarin, G. Servanton, T. de Vries, E. Smalbrugge, E. J. Geluk, T. J. Eijkemans, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, J. H. Wolter, “Lasing of wavelength-tunable (1.55 μm region) InAs/InGaAsP/InP (100) quantum dots grown by metal organic vapor-phase epitaxy,” Appl. Phys. Lett. 89(7), 073115 (2006).
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M. A. Cataluna, W. Sibbett, D. A. Livshits, J. Weimert, A. R. Kovsh, E. U. Rafailov, “Stable mode locking via ground- or excited-state transitions in a two-section quantum-dot laser,” Appl. Phys. Lett. 89(8), 081124 (2006).
[CrossRef]

E. U. Rafailov, M. A. Cataluna, W. Sibbett, N. D. Il’inskaya, Y. M. Zadiranov, A. E. Zhukov, V. M. Ustinov, D. A. Livshits, A. R. Kovsh, N. N. Ledentsov, “High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser,” Appl. Phys. Lett. 87(8), 081107 (2005).
[CrossRef]

Simos, C.

C. Mesaritakis, C. Simos, H. Simos, I. Krestnikov, D. Syvridis, “Dual ground-state pulse generation from a passively mode-locked InAs/InGaAs quantum dot laser,” Appl. Phys. Lett. 99(14), 141109 (2011).
[CrossRef]

Simos, H.

C. Mesaritakis, C. Simos, H. Simos, I. Krestnikov, D. Syvridis, “Dual ground-state pulse generation from a passively mode-locked InAs/InGaAs quantum dot laser,” Appl. Phys. Lett. 99(14), 141109 (2011).
[CrossRef]

Smalbrugge, B.

B. W. Tilma, Y. Jiao, J. Kotani, B. Smalbrugge, H. P. M. M. Ambrosius, P. J. Thijs, X. J. M. Leijtens, R. Ntzel, M. K. Smit, E. A. J. M. Bente, “Integrated tunable quantum-dot laser for optical coherence tomography in the 1.7µm wavelength region,” IEEE J. Quantum Electron. 48(2), 87–98 (2012).
[CrossRef]

M. J. R. Heck, E. A. J. M. Bente, B. Smalbrugge, Y. S. Oei, M. K. Smit, S. Anantathanasarn, R. Nötzel, “Observation of Q-switching and mode-locking in two-section InAs/InP (100) quantum dot lasers around 1.55 mum,” Opt. Express 15(25), 16292–16301 (2007).
[CrossRef] [PubMed]

R. Nötzel, S. Anantathanasarn, R. P. J. van Veldhoven, F. W. M. van Otten, T. J. Eijkemans, A. Trampert, B. Satpati, Y. Barbarin, E. A. J. M. Bente, Y.-S. Oei, T. de Vries, E. Geluk, B. Smalbrugge, M. K. Smit, J. H. Wolter, “Self assembled InAs/InP quantum dots for telecom applications in the 1.55 µm wavelength range: wavelength tuning, stacking, polarization control, and lasing,” Jpn. J. Appl. Phys. 45(8B), 6544–6549 (2006).
[CrossRef]

Smalbrugge, E.

M. S. Tahvili, Y. Barbarin, X. J. M. Leijtens, T. de Vries, E. Smalbrugge, J. Bolk, H. P. M. M. Ambrosius, M. K. Smit, E. A. J. M. Bente, “Directional control of optical power in integrated InP/InGaAsP extended cavity mode-locked ring lasers,” Opt. Lett. 36(13), 2462–2464 (2011).
[CrossRef] [PubMed]

S. Anantathanasarn, R. Nötzel, P. J. van Veldhoven, F. W. M. van Otten, Y. Barbarin, G. Servanton, T. de Vries, E. Smalbrugge, E. J. Geluk, T. J. Eijkemans, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, J. H. Wolter, “Lasing of wavelength-tunable (1.55 μm region) InAs/InGaAsP/InP (100) quantum dots grown by metal organic vapor-phase epitaxy,” Appl. Phys. Lett. 89(7), 073115 (2006).
[CrossRef]

Smit, M. K.

B. W. Tilma, Y. Jiao, J. Kotani, B. Smalbrugge, H. P. M. M. Ambrosius, P. J. Thijs, X. J. M. Leijtens, R. Ntzel, M. K. Smit, E. A. J. M. Bente, “Integrated tunable quantum-dot laser for optical coherence tomography in the 1.7µm wavelength region,” IEEE J. Quantum Electron. 48(2), 87–98 (2012).
[CrossRef]

M. S. Tahvili, Y. Barbarin, X. J. M. Leijtens, T. de Vries, E. Smalbrugge, J. Bolk, H. P. M. M. Ambrosius, M. K. Smit, E. A. J. M. Bente, “Directional control of optical power in integrated InP/InGaAsP extended cavity mode-locked ring lasers,” Opt. Lett. 36(13), 2462–2464 (2011).
[CrossRef] [PubMed]

M. J. R. Heck, A. Renault, E. A. J. M. Bente, Y.-S. Oei, M. K. Smit, K. S. E. Eikema, W. Ubachs, S. Anantathanasarn, R. Nötzel, “Passively mode-locked 4.6 and 10.5 GHz quantum dot laser diodes around 1.55 μm with large operating regime,” IEEE J. Sel. Top. Quantum Electron. 15(3), 634–643 (2009).
[CrossRef]

B. W. Tilma, M. S. Tahvili, J. Kotani, R. Nötzel, M. K. Smit, E. A. J. M. Bente, “Measurement and analysis of optical gain spectra in 1.6 to 1.8 μm InAs/InP (100) quantum-dot amplifiers,” Opt. Quantum Electron. 41(10), 735–749 (2009).
[CrossRef]

M. J. R. Heck, E. J. Salumbides, A. Renault, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, R. van Veldhoven, R. Nötzel, K. S. E. Eikema, W. Ubachs, “Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 microm,” Opt. Express 17(20), 18063–18075 (2009).
[CrossRef] [PubMed]

M. J. R. Heck, E. A. J. M. Bente, B. Smalbrugge, Y. S. Oei, M. K. Smit, S. Anantathanasarn, R. Nötzel, “Observation of Q-switching and mode-locking in two-section InAs/InP (100) quantum dot lasers around 1.55 mum,” Opt. Express 15(25), 16292–16301 (2007).
[CrossRef] [PubMed]

R. Nötzel, S. Anantathanasarn, R. P. J. van Veldhoven, F. W. M. van Otten, T. J. Eijkemans, A. Trampert, B. Satpati, Y. Barbarin, E. A. J. M. Bente, Y.-S. Oei, T. de Vries, E. Geluk, B. Smalbrugge, M. K. Smit, J. H. Wolter, “Self assembled InAs/InP quantum dots for telecom applications in the 1.55 µm wavelength range: wavelength tuning, stacking, polarization control, and lasing,” Jpn. J. Appl. Phys. 45(8B), 6544–6549 (2006).
[CrossRef]

S. Anantathanasarn, R. Nötzel, P. J. van Veldhoven, F. W. M. van Otten, Y. Barbarin, G. Servanton, T. de Vries, E. Smalbrugge, E. J. Geluk, T. J. Eijkemans, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, J. H. Wolter, “Lasing of wavelength-tunable (1.55 μm region) InAs/InGaAsP/InP (100) quantum dots grown by metal organic vapor-phase epitaxy,” Appl. Phys. Lett. 89(7), 073115 (2006).
[CrossRef]

Y. Barbarin, E. A. J. M. Bente, M. J. R. Heck, Y. S. Oei, R. Nötzel, M. K. Smit, “Characterization of a 15 GHz integrated bulk InGaAsP passively modelocked ring laser at 1.53microm,” Opt. Express 14(21), 9716–9727 (2006).
[CrossRef] [PubMed]

Stintz, A.

X. Huang, A. Stintz, H. Li, L. F. Lester, J. Cheng, K. J. Malloy, “Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers,” Appl. Phys. Lett. 78(19), 2825–2827 (2001).
[CrossRef]

Syvridis, D.

C. Mesaritakis, C. Simos, H. Simos, I. Krestnikov, D. Syvridis, “Dual ground-state pulse generation from a passively mode-locked InAs/InGaAs quantum dot laser,” Appl. Phys. Lett. 99(14), 141109 (2011).
[CrossRef]

Tahvili, M. S.

M. S. Tahvili, Y. Barbarin, X. J. M. Leijtens, T. de Vries, E. Smalbrugge, J. Bolk, H. P. M. M. Ambrosius, M. K. Smit, E. A. J. M. Bente, “Directional control of optical power in integrated InP/InGaAsP extended cavity mode-locked ring lasers,” Opt. Lett. 36(13), 2462–2464 (2011).
[CrossRef] [PubMed]

B. W. Tilma, M. S. Tahvili, J. Kotani, R. Nötzel, M. K. Smit, E. A. J. M. Bente, “Measurement and analysis of optical gain spectra in 1.6 to 1.8 μm InAs/InP (100) quantum-dot amplifiers,” Opt. Quantum Electron. 41(10), 735–749 (2009).
[CrossRef]

Tang, D.

Thijs, P. J.

B. W. Tilma, Y. Jiao, J. Kotani, B. Smalbrugge, H. P. M. M. Ambrosius, P. J. Thijs, X. J. M. Leijtens, R. Ntzel, M. K. Smit, E. A. J. M. Bente, “Integrated tunable quantum-dot laser for optical coherence tomography in the 1.7µm wavelength region,” IEEE J. Quantum Electron. 48(2), 87–98 (2012).
[CrossRef]

Thijs, P. J. A.

L. F. Tiemeijer, P. I. Kuindersma, P. J. A. Thijs, G. L. J. Rikken, “Passive FM locking in InGaAsP semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1385–1392 (1989).
[CrossRef]

Thompson, M. G.

M. G. Thompson, A. R. Rae, M. Xia, R. V. Penty, I. H. White, “InGaAs quantum-dot mode-locked laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15(3), 661–672 (2009).
[CrossRef]

Tiemeijer, L. F.

L. F. Tiemeijer, P. I. Kuindersma, P. J. A. Thijs, G. L. J. Rikken, “Passive FM locking in InGaAsP semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1385–1392 (1989).
[CrossRef]

Tilma, B. W.

B. W. Tilma, Y. Jiao, J. Kotani, B. Smalbrugge, H. P. M. M. Ambrosius, P. J. Thijs, X. J. M. Leijtens, R. Ntzel, M. K. Smit, E. A. J. M. Bente, “Integrated tunable quantum-dot laser for optical coherence tomography in the 1.7µm wavelength region,” IEEE J. Quantum Electron. 48(2), 87–98 (2012).
[CrossRef]

B. W. Tilma, M. S. Tahvili, J. Kotani, R. Nötzel, M. K. Smit, E. A. J. M. Bente, “Measurement and analysis of optical gain spectra in 1.6 to 1.8 μm InAs/InP (100) quantum-dot amplifiers,” Opt. Quantum Electron. 41(10), 735–749 (2009).
[CrossRef]

Tourrenc, J. P.

Trampert, A.

R. Nötzel, S. Anantathanasarn, R. P. J. van Veldhoven, F. W. M. van Otten, T. J. Eijkemans, A. Trampert, B. Satpati, Y. Barbarin, E. A. J. M. Bente, Y.-S. Oei, T. de Vries, E. Geluk, B. Smalbrugge, M. K. Smit, J. H. Wolter, “Self assembled InAs/InP quantum dots for telecom applications in the 1.55 µm wavelength range: wavelength tuning, stacking, polarization control, and lasing,” Jpn. J. Appl. Phys. 45(8B), 6544–6549 (2006).
[CrossRef]

Troccoli, M.

C. Y. Wang, L. Diehl, A. Gordon, C. Jirauschek, F. X. Kärtner, A. Belyanin, D. Bour, S. Corzine, G. Höfler, M. Troccoli, J. Faist, F. Capasso, “Coherent instabilities in a semiconductor laser with fast gain recovery,” Phys. Rev. A 75(3), 031802 (2007).
[CrossRef]

Ubachs, W.

M. J. R. Heck, A. Renault, E. A. J. M. Bente, Y.-S. Oei, M. K. Smit, K. S. E. Eikema, W. Ubachs, S. Anantathanasarn, R. Nötzel, “Passively mode-locked 4.6 and 10.5 GHz quantum dot laser diodes around 1.55 μm with large operating regime,” IEEE J. Sel. Top. Quantum Electron. 15(3), 634–643 (2009).
[CrossRef]

M. J. R. Heck, E. J. Salumbides, A. Renault, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, R. van Veldhoven, R. Nötzel, K. S. E. Eikema, W. Ubachs, “Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 microm,” Opt. Express 17(20), 18063–18075 (2009).
[CrossRef] [PubMed]

Ustinov, V. M.

E. U. Rafailov, M. A. Cataluna, W. Sibbett, N. D. Il’inskaya, Y. M. Zadiranov, A. E. Zhukov, V. M. Ustinov, D. A. Livshits, A. R. Kovsh, N. N. Ledentsov, “High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser,” Appl. Phys. Lett. 87(8), 081107 (2005).
[CrossRef]

van Otten, F. W. M.

S. Anantathanasarn, R. Nötzel, P. J. van Veldhoven, F. W. M. van Otten, Y. Barbarin, G. Servanton, T. de Vries, E. Smalbrugge, E. J. Geluk, T. J. Eijkemans, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, J. H. Wolter, “Lasing of wavelength-tunable (1.55 μm region) InAs/InGaAsP/InP (100) quantum dots grown by metal organic vapor-phase epitaxy,” Appl. Phys. Lett. 89(7), 073115 (2006).
[CrossRef]

R. Nötzel, S. Anantathanasarn, R. P. J. van Veldhoven, F. W. M. van Otten, T. J. Eijkemans, A. Trampert, B. Satpati, Y. Barbarin, E. A. J. M. Bente, Y.-S. Oei, T. de Vries, E. Geluk, B. Smalbrugge, M. K. Smit, J. H. Wolter, “Self assembled InAs/InP quantum dots for telecom applications in the 1.55 µm wavelength range: wavelength tuning, stacking, polarization control, and lasing,” Jpn. J. Appl. Phys. 45(8B), 6544–6549 (2006).
[CrossRef]

van Veldhoven, P. J.

S. Anantathanasarn, R. Nötzel, P. J. van Veldhoven, F. W. M. van Otten, Y. Barbarin, G. Servanton, T. de Vries, E. Smalbrugge, E. J. Geluk, T. J. Eijkemans, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, J. H. Wolter, “Lasing of wavelength-tunable (1.55 μm region) InAs/InGaAsP/InP (100) quantum dots grown by metal organic vapor-phase epitaxy,” Appl. Phys. Lett. 89(7), 073115 (2006).
[CrossRef]

van Veldhoven, R.

van Veldhoven, R. P. J.

R. Nötzel, S. Anantathanasarn, R. P. J. van Veldhoven, F. W. M. van Otten, T. J. Eijkemans, A. Trampert, B. Satpati, Y. Barbarin, E. A. J. M. Bente, Y.-S. Oei, T. de Vries, E. Geluk, B. Smalbrugge, M. K. Smit, J. H. Wolter, “Self assembled InAs/InP quantum dots for telecom applications in the 1.55 µm wavelength range: wavelength tuning, stacking, polarization control, and lasing,” Jpn. J. Appl. Phys. 45(8B), 6544–6549 (2006).
[CrossRef]

Veselinov, K.

K. Veselinov, F. Grillot, C. Cornet, J. Even, A. Bekiarski, M. Gioannini, S. Loualiche, “Analysis of the double laser emission occurring in 1.55-µm InAs–InP (113)B quantum-dot lasers,” IEEE J. Sel. Top. Quantum Electron. 43(9), 810–816 (2007).
[CrossRef]

Viktorov, E. A.

G. Fiol, D. Arsenijević, D. Bimberg, A. G. Vladimirov, M. Wolfrum, E. A. Viktorov, P. Mandel, “Hybrid mode-locking in a 40 GHz monolithic quantum dot laser,” Appl. Phys. Lett. 96(1), 011104 (2010).
[CrossRef]

Vladimirov, A. G.

G. Fiol, D. Arsenijević, D. Bimberg, A. G. Vladimirov, M. Wolfrum, E. A. Viktorov, P. Mandel, “Hybrid mode-locking in a 40 GHz monolithic quantum dot laser,” Appl. Phys. Lett. 96(1), 011104 (2010).
[CrossRef]

Wang, C. Y.

C. Y. Wang, L. Diehl, A. Gordon, C. Jirauschek, F. X. Kärtner, A. Belyanin, D. Bour, S. Corzine, G. Höfler, M. Troccoli, J. Faist, F. Capasso, “Coherent instabilities in a semiconductor laser with fast gain recovery,” Phys. Rev. A 75(3), 031802 (2007).
[CrossRef]

Wang, Q.

Weimert, J.

M. A. Cataluna, W. Sibbett, D. A. Livshits, J. Weimert, A. R. Kovsh, E. U. Rafailov, “Stable mode locking via ground- or excited-state transitions in a two-section quantum-dot laser,” Appl. Phys. Lett. 89(8), 081124 (2006).
[CrossRef]

White, I. H.

M. G. Thompson, A. R. Rae, M. Xia, R. V. Penty, I. H. White, “InGaAs quantum-dot mode-locked laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15(3), 661–672 (2009).
[CrossRef]

Wolfrum, M.

G. Fiol, D. Arsenijević, D. Bimberg, A. G. Vladimirov, M. Wolfrum, E. A. Viktorov, P. Mandel, “Hybrid mode-locking in a 40 GHz monolithic quantum dot laser,” Appl. Phys. Lett. 96(1), 011104 (2010).
[CrossRef]

Wolter, J. H.

R. Nötzel, S. Anantathanasarn, R. P. J. van Veldhoven, F. W. M. van Otten, T. J. Eijkemans, A. Trampert, B. Satpati, Y. Barbarin, E. A. J. M. Bente, Y.-S. Oei, T. de Vries, E. Geluk, B. Smalbrugge, M. K. Smit, J. H. Wolter, “Self assembled InAs/InP quantum dots for telecom applications in the 1.55 µm wavelength range: wavelength tuning, stacking, polarization control, and lasing,” Jpn. J. Appl. Phys. 45(8B), 6544–6549 (2006).
[CrossRef]

S. Anantathanasarn, R. Nötzel, P. J. van Veldhoven, F. W. M. van Otten, Y. Barbarin, G. Servanton, T. de Vries, E. Smalbrugge, E. J. Geluk, T. J. Eijkemans, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, J. H. Wolter, “Lasing of wavelength-tunable (1.55 μm region) InAs/InGaAsP/InP (100) quantum dots grown by metal organic vapor-phase epitaxy,” Appl. Phys. Lett. 89(7), 073115 (2006).
[CrossRef]

Wright, J. B.

F. Grillot, N. A. Naderi, J. B. Wright, R. Raghunathan, M. T. Crowley, L. F. Lester, “A dual-mode quantum dot laser operating in the excited state,” Appl. Phys. Lett. 99(23), 231110 (2011).
[CrossRef]

N. A. Naderi, F. Grillot, K. Yang, J. B. Wright, A. Gin, L. F. Lester, “Two-color multi-section quantum dot distributed feedback laser,” Opt. Express 18(26), 27028–27035 (2010).
[CrossRef] [PubMed]

Xia, M.

M. G. Thompson, A. R. Rae, M. Xia, R. V. Penty, I. H. White, “InGaAs quantum-dot mode-locked laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15(3), 661–672 (2009).
[CrossRef]

Xu, C.

Xu, J.

Xu, X.

Yagi, T.

Yang, K.

Yang, W.

Yee, W. M.

W. M. Yee, K. A. Shore, “Multimode analysis of self locked FM operation in laser diodes,” IEE Proc.-J: Optoelectron. 140, 21 (1993).

Zadiranov, Y. M.

E. U. Rafailov, M. A. Cataluna, W. Sibbett, N. D. Il’inskaya, Y. M. Zadiranov, A. E. Zhukov, V. M. Ustinov, D. A. Livshits, A. R. Kovsh, N. N. Ledentsov, “High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser,” Appl. Phys. Lett. 87(8), 081107 (2005).
[CrossRef]

Zhang, J.

Zhang, L.

Zhang, X.

Zhang, Z.

Zhukov, A. E.

E. U. Rafailov, M. A. Cataluna, W. Sibbett, N. D. Il’inskaya, Y. M. Zadiranov, A. E. Zhukov, V. M. Ustinov, D. A. Livshits, A. R. Kovsh, N. N. Ledentsov, “High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser,” Appl. Phys. Lett. 87(8), 081107 (2005).
[CrossRef]

Appl. Opt.

Appl. Phys. Lett.

X. Huang, A. Stintz, H. Li, L. F. Lester, J. Cheng, K. J. Malloy, “Passive mode-locking in 1.3 μm two-section InAs quantum dot lasers,” Appl. Phys. Lett. 78(19), 2825–2827 (2001).
[CrossRef]

E. U. Rafailov, M. A. Cataluna, W. Sibbett, N. D. Il’inskaya, Y. M. Zadiranov, A. E. Zhukov, V. M. Ustinov, D. A. Livshits, A. R. Kovsh, N. N. Ledentsov, “High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser,” Appl. Phys. Lett. 87(8), 081107 (2005).
[CrossRef]

S. Anantathanasarn, R. Nötzel, P. J. van Veldhoven, F. W. M. van Otten, Y. Barbarin, G. Servanton, T. de Vries, E. Smalbrugge, E. J. Geluk, T. J. Eijkemans, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, J. H. Wolter, “Lasing of wavelength-tunable (1.55 μm region) InAs/InGaAsP/InP (100) quantum dots grown by metal organic vapor-phase epitaxy,” Appl. Phys. Lett. 89(7), 073115 (2006).
[CrossRef]

F. Grillot, N. A. Naderi, J. B. Wright, R. Raghunathan, M. T. Crowley, L. F. Lester, “A dual-mode quantum dot laser operating in the excited state,” Appl. Phys. Lett. 99(23), 231110 (2011).
[CrossRef]

M. A. Cataluna, W. Sibbett, D. A. Livshits, J. Weimert, A. R. Kovsh, E. U. Rafailov, “Stable mode locking via ground- or excited-state transitions in a two-section quantum-dot laser,” Appl. Phys. Lett. 89(8), 081124 (2006).
[CrossRef]

G. Fiol, D. Arsenijević, D. Bimberg, A. G. Vladimirov, M. Wolfrum, E. A. Viktorov, P. Mandel, “Hybrid mode-locking in a 40 GHz monolithic quantum dot laser,” Appl. Phys. Lett. 96(1), 011104 (2010).
[CrossRef]

C. Mesaritakis, C. Simos, H. Simos, I. Krestnikov, D. Syvridis, “Dual ground-state pulse generation from a passively mode-locked InAs/InGaAs quantum dot laser,” Appl. Phys. Lett. 99(14), 141109 (2011).
[CrossRef]

IEE Proc.-J: Optoelectron.

W. M. Yee, K. A. Shore, “Multimode analysis of self locked FM operation in laser diodes,” IEE Proc.-J: Optoelectron. 140, 21 (1993).

IEEE J. Quantum Electron.

L. F. Tiemeijer, P. I. Kuindersma, P. J. A. Thijs, G. L. J. Rikken, “Passive FM locking in InGaAsP semiconductor lasers,” IEEE J. Quantum Electron. 25(6), 1385–1392 (1989).
[CrossRef]

S. Arahira, Y. Ogawa, “Repetition – frequency tuning of monolithic passively mode-locked semiconductor lasers with integrated extended cavities,” IEEE J. Quantum Electron. 33(2), 255–264 (1997).
[CrossRef]

B. W. Tilma, Y. Jiao, J. Kotani, B. Smalbrugge, H. P. M. M. Ambrosius, P. J. Thijs, X. J. M. Leijtens, R. Ntzel, M. K. Smit, E. A. J. M. Bente, “Integrated tunable quantum-dot laser for optical coherence tomography in the 1.7µm wavelength region,” IEEE J. Quantum Electron. 48(2), 87–98 (2012).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron.

F. Lelarge, B. Dagens, J. Renaudier, R. Brenot, A. Accard, F. Dijk, D. Make, O. L. Gouezigou, J.-G. Provost, F. Poingt, J. Landreau, O. Drisse, E. Derouin, B. Rousseau, F. Pommereau, G.-H. Duan, “Recent advances on InAs/InP quantum dash based semiconductor lasers and optical amplifiers operating at 1.55µm,” IEEE J. Sel. Top. Quantum Electron. 13(1), 111–124 (2007).
[CrossRef]

M. J. R. Heck, A. Renault, E. A. J. M. Bente, Y.-S. Oei, M. K. Smit, K. S. E. Eikema, W. Ubachs, S. Anantathanasarn, R. Nötzel, “Passively mode-locked 4.6 and 10.5 GHz quantum dot laser diodes around 1.55 μm with large operating regime,” IEEE J. Sel. Top. Quantum Electron. 15(3), 634–643 (2009).
[CrossRef]

M. G. Thompson, A. R. Rae, M. Xia, R. V. Penty, I. H. White, “InGaAs quantum-dot mode-locked laser diodes,” IEEE J. Sel. Top. Quantum Electron. 15(3), 661–672 (2009).
[CrossRef]

K. Sato, “Optical pulse generation using Fabry–Pérot lasers under continuous-wave operation,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1288–1293 (2003).
[CrossRef]

K. Veselinov, F. Grillot, C. Cornet, J. Even, A. Bekiarski, M. Gioannini, S. Loualiche, “Analysis of the double laser emission occurring in 1.55-µm InAs–InP (113)B quantum-dot lasers,” IEEE J. Sel. Top. Quantum Electron. 43(9), 810–816 (2007).
[CrossRef]

Jpn. J. Appl. Phys.

R. Nötzel, S. Anantathanasarn, R. P. J. van Veldhoven, F. W. M. van Otten, T. J. Eijkemans, A. Trampert, B. Satpati, Y. Barbarin, E. A. J. M. Bente, Y.-S. Oei, T. de Vries, E. Geluk, B. Smalbrugge, M. K. Smit, J. H. Wolter, “Self assembled InAs/InP quantum dots for telecom applications in the 1.55 µm wavelength range: wavelength tuning, stacking, polarization control, and lasing,” Jpn. J. Appl. Phys. 45(8B), 6544–6549 (2006).
[CrossRef]

Opt. Express

M. J. R. Heck, E. A. J. M. Bente, B. Smalbrugge, Y. S. Oei, M. K. Smit, S. Anantathanasarn, R. Nötzel, “Observation of Q-switching and mode-locking in two-section InAs/InP (100) quantum dot lasers around 1.55 mum,” Opt. Express 15(25), 16292–16301 (2007).
[CrossRef] [PubMed]

Y. Barbarin, E. A. J. M. Bente, M. J. R. Heck, Y. S. Oei, R. Nötzel, M. K. Smit, “Characterization of a 15 GHz integrated bulk InGaAsP passively modelocked ring laser at 1.53microm,” Opt. Express 14(21), 9716–9727 (2006).
[CrossRef] [PubMed]

J. P. Tourrenc, A. Akrout, K. Merghem, A. Martinez, F. Lelarge, A. Shen, G. H. Duan, A. Ramdane, “Experimental investigation of the timing jitter in self-pulsating quantum-dash lasers operating at 155 µm,” Opt. Express 16(22), 17706–17713 (2008).
[CrossRef] [PubMed]

Z. G. Lu, J. R. Liu, P. J. Poole, S. Raymond, P. J. Barrios, D. Poitras, G. Pakulski, P. Grant, D. Roy-Guay, “An L-band monolithic InAs/InP quantum dot mode-locked laser with femtosecond pulses,” Opt. Express 17(16), 13609–13614 (2009).
[CrossRef] [PubMed]

M. J. R. Heck, E. J. Salumbides, A. Renault, E. A. J. M. Bente, Y. S. Oei, M. K. Smit, R. van Veldhoven, R. Nötzel, K. S. E. Eikema, W. Ubachs, “Analysis of hybrid mode-locking of two-section quantum dot lasers operating at 1.5 microm,” Opt. Express 17(20), 18063–18075 (2009).
[CrossRef] [PubMed]

N. A. Naderi, F. Grillot, K. Yang, J. B. Wright, A. Gin, L. F. Lester, “Two-color multi-section quantum dot distributed feedback laser,” Opt. Express 18(26), 27028–27035 (2010).
[CrossRef] [PubMed]

Z. Cong, D. Tang, W. De Tan, J. Zhang, C. Xu, D. Luo, X. Xu, D. Li, J. Xu, X. Zhang, Q. Wang, “Dual-wavelength passively mode-locked Nd:LuYSiO5 laser with SESAM,” Opt. Express 19(5), 3984–3989 (2011).
[CrossRef] [PubMed]

Opt. Lett.

Opt. Quantum Electron.

B. W. Tilma, M. S. Tahvili, J. Kotani, R. Nötzel, M. K. Smit, E. A. J. M. Bente, “Measurement and analysis of optical gain spectra in 1.6 to 1.8 μm InAs/InP (100) quantum-dot amplifiers,” Opt. Quantum Electron. 41(10), 735–749 (2009).
[CrossRef]

Phys. Rev. A

C. Y. Wang, L. Diehl, A. Gordon, C. Jirauschek, F. X. Kärtner, A. Belyanin, D. Bour, S. Corzine, G. Höfler, M. Troccoli, J. Faist, F. Capasso, “Coherent instabilities in a semiconductor laser with fast gain recovery,” Phys. Rev. A 75(3), 031802 (2007).
[CrossRef]

Proc. SPIE

S. Breuer, M. Rossetti, W. Elsasser, L. Drzewietzki, P. Bardella, I. Montrosset, M. Krakowski, M. Hopkinson, “Reverse ground-state excited-state transition dynamics in two-section quantum dot semiconductor lasers: mode-locking and state-switching,” Proc. SPIE 7720, 772011, 772011-10 (2010).
[CrossRef]

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Figures (16)

Fig. 1
Fig. 1

Top view of an array of 12 mode-locked lasers with different lengths of absorber section and total cavity length of 13mm. Devices are mounted and wire-bonded on an RF submount. Two single-section FP structures (top and bottom) are included as reference lasers.

Fig. 2
Fig. 2

Region of mode-locking for the 10GHz laser. Height of the peak (color-coded in dB scale) at the fundamental frequency over noise floor (−90dB), recorded with a 50GHz electrical spectrum analyzer. The electrical bandwidth used to obtain the spectra is 50kHz. Value of full width of peak (MHz) at 20dB lower than the top of peak is superimposed on the RF power mapping.

Fig. 3
Fig. 3

Repetition frequency tuning characteristics of the 10GHz passively mode-locked QD laser at VSA = –0.5V as the injection current to the SOA-section is increased (open squares). The filled black squares show the repetition frequency at ISOA = 280mA for different values of absorber reverse bias.

Fig. 4
Fig. 4

Evolution of optical spectrum (linear scale, color-coded in units of µW/nm) for the 4mm HR-coated QD MLLD with 120µm-long SA-section at VSA = −0.5V. The plot is obtained as a function injection current to the SOA-section. The optical bandwidth used is 1nm.

Fig. 5
Fig. 5

Optical spectra (linear scale, a.u.) obtained with the 10GHz QD laser as the gain section injection section is increased at different values of absorber voltage.

Fig. 6
Fig. 6

(a) Dual-wavelength optical spectrum (linear scale, µW/nm) of the 10GHz QD laser operating at ISOA = 280mA, VSA = –0.5V. (b) RF spectra of full bandwidth and filtered optical signals when BPF is tuned at the center of short-wavelength (green) and the long-wavelength (red) lobes. RF resolution bandwidth is 3MHz. The arrows on the figure show top of RF peaks.

Fig. 7
Fig. 7

Measured values of timing jitter (color-coded in ps) determine the RF locking range vs. RF power and frequency. Jitter values are calculated by integration of single side-band phase noise signal (10kHz-80MHz) around the fundamental harmonic. The transitions on the higher-frequency side of the locking range are too abrupt to visualize. The device is operated at ISOA = 280mA and VSA = −0.5V.

Fig. 8
Fig. 8

(a) Schematic of the setup used to measure relative timing difference of spectrally filtered optical pulses. (b) Typical time traces recorded with the 50GHz sampling oscilloscope. (c) Measured values of timing differences (ps, left axis) on a plot of optical spectrum (µW/nm, right axis) indicate an almost linear spectral chirp over each mode group.

Fig. 9
Fig. 9

Repetition frequency tuning characteristics of the 3GHz passively mode-locked QD laser at VSA = –0.8V as the injection current to the SOA-section is increased (open squares). The filled black squares show the repetition frequency at ISOA = 800mA for different values of absorber reverse bias.

Fig. 10
Fig. 10

(a) Schematic of the setup used to measure relative timing difference of spectrally filtered optical pulses in passive ML regime. (b) Measured values of timing differences (ps, left axis) on a plot of optical spectrum (µW/nm, right axis).

Fig. 11
Fig. 11

RF locking range: measured values of timing jitter at several values of RF power and frequencies for the 3GHZ QD MLLD. The device is operated at ISOA = 800mA and VSA = −0.8V. Timing jitter in case of passively mode-locked laser is 8-16ps.

Fig. 12
Fig. 12

Recorded optical spectra (linear scale) obtained with the 13mm-long MLLD under hybrid ML at several RF frequencies. Modulation RF power is PRF = 15dBm. Free running frequency is frep = 3.105GHz.

Fig. 13
Fig. 13

(a) Time traces of spectrally filtered optical pulses recorded by a 30GHz sampling oscilloscope. (b) Measured values of measured timing differences (ps, left axis) on a plot of optical spectrum at ISOA = 800mA, VSA = –0.8V, and PRF = 19dBm (6dBm on the SA due to RF losses).

Fig. 14
Fig. 14

(a) Evolution of optical spectrum (mW/nm) obtained with the single-section QD laser, as the injection current is increased. Region of ML is indicated. (b) Electrical spectrum recorded at I = 650mA, and (c) I = 700mA.

Fig. 15
Fig. 15

(a) Time traces of spectrally filtered optical pulses recorded with a 6GHz real time oscilloscope. (b) Measured values of timing delays on a plot of optical spectrum at I = 650mA.

Fig. 16
Fig. 16

Optical spectra (linear scale, a.u.) and spectral chirp (ps/nm) obtained with (a) 3GHz laser at J = 3.27kA/cm2, (b) 10GHz laser at J = 3.61kA/cm2, (c) 4.5GHz single-section at J = 3.61kA/cm2, and (d) 4.6GHz two-section at J = 5.15kA/cm2.

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