Abstract

A novel photonic structure formed by the monolithic integration of a vertical III-V nanowire on top of a L3 two-dimensional photonic crystal microcavity is proposed to enhance light emission from the nanowire. The impact on the nanowire spontaneous emission rate is evaluated by calculating the spontaneous emission factor β, and the material gain at threshold is used as a figure of merit of this vertical emitting nanolaser. An optimal design is identified for a GaAs nanowire geometry with r = 155 nm and L~1.1 μm, where minimum gain at threshold (gth~13×103 cm−1) and large spontaneous emission factor (β~0.3) are simultaneously achieved. Modification of the directivity of the L3 photonic crystal cavity via the band-folding principle is employed to further optimize the far-field radiation pattern and to increase the directivity of the device. These results lay the foundation for a new approach toward large-scale integration of vertical emitting nanolasers and may enable applications such as intra-chip optical interconnects.

© 2012 OSA

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  1. H. J. Joyce, Q. Gao, H. Hoe Tan, C. Jagadish, Y. Kim, J. Zou, L. M. Smith, H. E. Jackson, J. M. Yarrison-Rice, P. Parkinson, and M. B. Johnston, “III–V semiconductor nanowires for optoelectronic device applications,” Prog. Quantum Electron. 35(2-3), 23–75 (2011).
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    [Crossref]
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    [Crossref]

2012 (1)

C. Wilhelm, A. Larrue, X. Dai, D. Migas, and C. Soci, “Anisotropic photonic properties of III-V nanowires in the zinc-blende and wurtzite phase,” Nanoscale 4(5), 1446–1454 (2012).
[Crossref] [PubMed]

2011 (6)

H. J. Joyce, Q. Gao, H. Hoe Tan, C. Jagadish, Y. Kim, J. Zou, L. M. Smith, H. E. Jackson, J. M. Yarrison-Rice, P. Parkinson, and M. B. Johnston, “III–V semiconductor nanowires for optoelectronic device applications,” Prog. Quantum Electron. 35(2-3), 23–75 (2011).
[Crossref]

K. Tomioka, T. Tanaka, S. Hara, K. Hiruma, and T. Fukui, “III-V nanowires on Si substrate: selective-area growth and device applications,” IEEE J. Sel. Top. Quantum Electron. 17(4), 1112–1129 (2011).
[Crossref]

Y. Xiao, C. Meng, P. Wang, Y. Ye, H. Yu, S. Wang, F. Gu, L. Dai, and L. Tong, “Single-nanowire single-mode laser,” Nano Lett. 11(3), 1122–1126 (2011).
[Crossref] [PubMed]

R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[Crossref]

J. Heo, W. Guo, and P. Bhattacharya, “Monolithic single GaN nanowire laser with photonic crystal microcavity on silicon,” Appl. Phys. Lett. 98(2), 021110 (2011).
[Crossref]

B. Ellis, M. A. Mayer, G. Shambat, T. Sarmiento, J. Harris, E. E. Haller, and J. Vuckovic, “Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser,” Nat. Photonics 5(5), 297–300 (2011).
[Crossref]

2010 (7)

N.-V.-Q. Tran, S. Combrié, P. Colman, A. De Rossi, and T. Mei, “Vertical high emission in photonic crystal nanocavities by band-folding design,” Phys. Rev. B 82(7), 075120 (2010).
[Crossref]

J. Heinrich, A. Huggenberger, T. Heindel, S. Reitzenstein, S. Hofling, L. Worschech, and A. Forchel, “Single photon emission from positioned GaAs/AlGaAs photonic nanowires,” Appl. Phys. Lett. 96(21), 211117 (2010).
[Crossref]

S. N. Dorenbos, H. Sasakura, M. P. van Kouwen, N. Akopian, S. Adachi, N. Namekata, M. Jo, J. Motohisa, Y. Kobayashi, K. Tomioka, T. Fukui, S. Inoue, H. Kumano, C. M. Natarajan, R. H. Hadfield, T. Zijlstra, T. M. Klapwijk, V. Zwiller, and I. Suemune, “Position controlled nanowires for infrared single photon emission,” Appl. Phys. Lett. 97(17), 171106 (2010).
[Crossref]

S. Matsuo, A. Shinya, T. Kakitsuka, K. Nozaki, T. Segawa, T. Sato, Y. Kawaguchi, and M. Notomi, “High-speed ultracompact buried heterostructure photonic-crystal laser with 13 fJ of energy consumed per bit transmitted,” Nat. Photonics 4(9), 648–654 (2010).
[Crossref]

C. Z. Ning, “Semiconductor nanolasers,” Phys. Status Solidi 247, 774–788 (2010) (b).

R. Hostein, R. Braive, L. Le Gratiet, A. Talneau, G. Beaudoin, I. Robert-Philip, I. Sagnes, and A. Beveratos, “Demonstration of coherent emission from high-β photonic crystal nanolasers at room temperature,” Opt. Lett. 35(8), 1154–1156 (2010).
[Crossref] [PubMed]

T. Suhr, N. Gregersen, K. Yvind, and J. Mørk, “Modulation response of nanoLEDs and nanolasers exploiting Purcell enhanced spontaneous emission,” Opt. Express 18(11), 11230–11241 (2010).
[Crossref] [PubMed]

2009 (7)

D. Spirkoska, G. Abstreiter, and A. F. Morral, “GaAs nanowires and related prismatic heterostructures,” Semicond. Sci. Technol. 24(11), 113001 (2009).
[Crossref]

A.-L. Henneghien, B. Gayral, Y. Désières, and J.-M. Gérard, “Simulation of waveguiding and emitting properties of semiconductor nanowires with hexagonal or circular sections,” J. Opt. Soc. Am. B 26(12), 2396–2403 (2009).
[Crossref]

I. Friedler, C. Sauvan, J. P. Hugonin, P. Lalanne, J. Claudon, and J. M. Gérard, “Solid-state single photon sources: the nanowire antenna,” Opt. Express 17(4), 2095–2110 (2009).
[Crossref] [PubMed]

L. Yang, J. Motohisa, T. Fukui, L. X. Jia, L. Zhang, M. M. Geng, P. Chen, Y. L. Liu, and T. Wang, “Fabry-Pérot microcavity modes observed in the micro-photoluminescence spectra of the single nanowire with InGaAs/GaAs heterostructure,” Opt. Express 17(11), 9337–9346 (2009).
[Crossref] [PubMed]

B. Hua, J. Motohisa, Y. Kobayashi, S. Hara, and T. Fukui, “Single GaAs/GaAsP coaxial core-shell nanowire lasers,” Nano Lett. 9(1), 112–116 (2009).
[Crossref] [PubMed]

W. Wei, X.-Y. Bao, C. Soci, Y. Ding, Z.-L. Wang, and D. Wang, “Direct heteroepitaxy of vertical InAs nanowires on Si substrates for broad band photovoltaics and photodetection,” Nano Lett. 9(8), 2926–2934 (2009).
[Crossref] [PubMed]

N.-V.-Q. Tran, S. Combrié, and A. De Rossi, “Directive emission from high-Q photonic crystal cavities through band folding,” Phys. Rev. B 79(4), 041101 (2009).
[Crossref]

2008 (2)

X.-Y. Bao, C. Soci, D. Susac, J. Bratvold, D. P. R. Aplin, W. Wei, C.-Y. Chen, S. A. Dayeh, K. L. Kavanagh, and D. Wang, “Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapor deposition,” Nano Lett. 8(11), 3755–3760 (2008).
[Crossref] [PubMed]

M.-K. Seo, J.-K. Yang, K.-Y. Jeong, H.-G. Park, F. Qian, H.-S. Ee, Y.-S. No, and Y.-H. Lee, “Modal characteristics in a single-nanowire cavity with a triangular cross section,” Nano Lett. 8(12), 4534–4538 (2008).
[Crossref] [PubMed]

2007 (4)

Y. S. Choi, M. T. Rakher, K. Hennessy, S. Strauf, A. Badolato, P. M. Petroff, D. Bouwmeester, and E. L. Hu, “Evolution of the onset of coherence in a family of photonic crystal nanolasers,” Appl. Phys. Lett. 91(3), 031108 (2007).
[Crossref]

H.-G. Park, F. Qian, C. J. Barrelet, and Y. Li, “Microstadium single-nanowire laser,” Appl. Phys. Lett. 91(25), 251115 (2007).
[Crossref]

S. Noda, M. Fujita, and T. Asano, “Spontaneous-emission control by photonic crystals and nanocavities,” Nat. Photonics 1(8), 449–458 (2007).
[Crossref]

A. R. A. Chalcraft, S. Lam, D. O'Brien, T. F. Krauss, M. Sahin, D. Szymanski, D. Sanvitto, R. Oulton, M. S. Skolnick, A. M. Fox, D. M. Whittaker, H. Y. Liu, and M. Hopkinson, “Mode structure of the L3 photonic crystal cavity,” Appl. Phys. Lett. 90(24), 241117 (2007).
[Crossref]

2006 (5)

C. J. Barrelet, J. Bao, M. Loncar, H.-G. Park, F. Capasso, and C. M. Lieber, “Hybrid single-nanowire photonic crystal and microresonator structures,” Nano Lett. 6(1), 11–15 (2006).
[Crossref] [PubMed]

A. H. Chin, S. Vaddiraju, A. V. Maslov, C. Z. Ning, M. K. Sunkara, and M. Meyyappan, “Near-infrared semiconductor subwavelength-wire lasers,” Appl. Phys. Lett. 88(16), 163115 (2006).
[Crossref]

L. Chen and E. Towe, “Nanowire lasers with distributed-Bragg-reflector mirrors,” Appl. Phys. Lett. 89(5), 053125 (2006).
[Crossref]

S. Strauf, K. Hennessy, M. T. Rakher, Y. S. Choi, A. Badolato, L. C. Andreani, E. L. Hu, P. M. Petroff, and D. Bouwmeester, “Self-tuned quantum dot gain in photonic crystal lasers,” Phys. Rev. Lett. 96(12), 127404 (2006).
[Crossref] [PubMed]

.-Q. Wang, Y.-Z. Huang, Q. Chen, and Z.-P. Cai, “Analysis of mode quality factors and mode reflectivities for nanowire cavity by FDTD technique,” IEEE J. Quantum Electron. 42(2), 146–151 (2006).
[Crossref]

2005 (1)

C. Sauvan, P. Lalanne, and J. P. Hugonin, “Slow-wave effect and mode-profile matching in photonic crystal microcavities,” Phys. Rev. B 71(16), 165118 (2005).
[Crossref]

2004 (3)

A. V. Maslov and C. Z. Ning, “Far-field emission of a semiconductor nanowire laser,” Opt. Lett. 29(6), 572–574 (2004).
[Crossref] [PubMed]

A. V. Maslov and C. Z. Ning, “Modal properties of semiconductor nanowires for laser application,” Proc. SPIE 5349, 24–30 (2004).
[Crossref]

T. Yoshie, A. Scherer, J. Hendrickson, G. Khitrova, H. M. Gibbs, G. Rupper, C. Ell, O. B. Shchekin, and D. G. Deppe, “Vacuum Rabi splitting with a single quantum dot in a photonic crystal nanocavity,” Nature 432(7014), 200–203 (2004).
[Crossref] [PubMed]

2003 (2)

X. Duan, Y. Huang, R. Agarwal, and C. M. Lieber, “Single-nanowire electrically driven lasers,” Nature 421(6920), 241–245 (2003).
[Crossref] [PubMed]

T. Baba and D. Sano, “Low-threshold lasing and Purcell effect in microdisk lasers at room temperature,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1340–1346 (2003).
[Crossref]

2002 (3)

C. Kim, W. J. Kim, A. Stapleton, J.-R. Cao, J. D. O'Brien, and P. D. Dapkus, “Quality factors in single-defect photonic-crystal lasers with asymmetric cladding layers,” J. Opt. Soc. Am. B 19(8), 1777–1781 (2002).
[Crossref]

J. C. Johnson, H.-J. Choi, K. P. Knutsen, R. D. Schaller, P. Yang, and R. J. Saykally, “Single gallium nitride nanowire lasers,” Nat. Mater. 1(2), 106–110 (2002).
[Crossref] [PubMed]

J. Vuckovic, M. Loncar, H. Mabuchi, and A. Scherer, “Optimization of the Q factor in photonic crystal microcavities,” IEEE J. Quantum Electron. 38(7), 850–856 (2002).
[Crossref]

2001 (1)

J. C. Johnson, H. Yan, R. D. Schaller, L. H. Haber, R. J. Saykally, and P. Yang, “Single nanowire lasers,” J. Phys. Chem. B 105(46), 11387–11390 (2001).
[Crossref]

1999 (2)

M. Fujita, A. Sakai, and T. Baba, “Ultrasmall and ultralow threshold GaInAsP-InP microdisk injection lasers: design, fabrication, lasing characteristics, and spontaneous emission factor,” IEEE J. Sel. Top. Quantum Electron. 5(3), 673–681 (1999).
[Crossref]

L. C. Andreani, G. Panzarini, and J.-M. Gérard, “Strong-coupling regime for quantum boxes in pillar microcavities: Theory,” Phys. Rev. B 60(19), 13276–13279 (1999).
[Crossref]

1998 (1)

J. M. Gérard, B. Sermage, B. Gayral, B. Legrand, E. Costard, and V. Thierry-Mieg, “Enhanced spontaneous emission by quantum boxes in a monolithic optical microcavity,” Phys. Rev. Lett. 81(5), 1110–1113 (1998).
[Crossref]

1997 (1)

T. Baba, “Photonic crystals and microdisk cavities based on GaInAsP-InP system,” IEEE J. Sel. Top. Quantum Electron. 3(3), 808–830 (1997).
[Crossref]

1991 (1)

T. Baba, T. Hamano, F. Koyama, and K. Iga, “Spontaneous emission factor of a microcavity DBR surface-emitting laser,” IEEE J. Quantum Electron. 27(6), 1347–1358 (1991).
[Crossref]

Abstreiter, G.

D. Spirkoska, G. Abstreiter, and A. F. Morral, “GaAs nanowires and related prismatic heterostructures,” Semicond. Sci. Technol. 24(11), 113001 (2009).
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Adachi, S.

S. N. Dorenbos, H. Sasakura, M. P. van Kouwen, N. Akopian, S. Adachi, N. Namekata, M. Jo, J. Motohisa, Y. Kobayashi, K. Tomioka, T. Fukui, S. Inoue, H. Kumano, C. M. Natarajan, R. H. Hadfield, T. Zijlstra, T. M. Klapwijk, V. Zwiller, and I. Suemune, “Position controlled nanowires for infrared single photon emission,” Appl. Phys. Lett. 97(17), 171106 (2010).
[Crossref]

Agarwal, R.

X. Duan, Y. Huang, R. Agarwal, and C. M. Lieber, “Single-nanowire electrically driven lasers,” Nature 421(6920), 241–245 (2003).
[Crossref] [PubMed]

Akopian, N.

S. N. Dorenbos, H. Sasakura, M. P. van Kouwen, N. Akopian, S. Adachi, N. Namekata, M. Jo, J. Motohisa, Y. Kobayashi, K. Tomioka, T. Fukui, S. Inoue, H. Kumano, C. M. Natarajan, R. H. Hadfield, T. Zijlstra, T. M. Klapwijk, V. Zwiller, and I. Suemune, “Position controlled nanowires for infrared single photon emission,” Appl. Phys. Lett. 97(17), 171106 (2010).
[Crossref]

Andreani, L. C.

S. Strauf, K. Hennessy, M. T. Rakher, Y. S. Choi, A. Badolato, L. C. Andreani, E. L. Hu, P. M. Petroff, and D. Bouwmeester, “Self-tuned quantum dot gain in photonic crystal lasers,” Phys. Rev. Lett. 96(12), 127404 (2006).
[Crossref] [PubMed]

L. C. Andreani, G. Panzarini, and J.-M. Gérard, “Strong-coupling regime for quantum boxes in pillar microcavities: Theory,” Phys. Rev. B 60(19), 13276–13279 (1999).
[Crossref]

Aplin, D. P. R.

X.-Y. Bao, C. Soci, D. Susac, J. Bratvold, D. P. R. Aplin, W. Wei, C.-Y. Chen, S. A. Dayeh, K. L. Kavanagh, and D. Wang, “Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapor deposition,” Nano Lett. 8(11), 3755–3760 (2008).
[Crossref] [PubMed]

Asano, T.

S. Noda, M. Fujita, and T. Asano, “Spontaneous-emission control by photonic crystals and nanocavities,” Nat. Photonics 1(8), 449–458 (2007).
[Crossref]

Baba, T.

T. Baba and D. Sano, “Low-threshold lasing and Purcell effect in microdisk lasers at room temperature,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1340–1346 (2003).
[Crossref]

M. Fujita, A. Sakai, and T. Baba, “Ultrasmall and ultralow threshold GaInAsP-InP microdisk injection lasers: design, fabrication, lasing characteristics, and spontaneous emission factor,” IEEE J. Sel. Top. Quantum Electron. 5(3), 673–681 (1999).
[Crossref]

T. Baba, “Photonic crystals and microdisk cavities based on GaInAsP-InP system,” IEEE J. Sel. Top. Quantum Electron. 3(3), 808–830 (1997).
[Crossref]

T. Baba, T. Hamano, F. Koyama, and K. Iga, “Spontaneous emission factor of a microcavity DBR surface-emitting laser,” IEEE J. Quantum Electron. 27(6), 1347–1358 (1991).
[Crossref]

Badolato, A.

Y. S. Choi, M. T. Rakher, K. Hennessy, S. Strauf, A. Badolato, P. M. Petroff, D. Bouwmeester, and E. L. Hu, “Evolution of the onset of coherence in a family of photonic crystal nanolasers,” Appl. Phys. Lett. 91(3), 031108 (2007).
[Crossref]

S. Strauf, K. Hennessy, M. T. Rakher, Y. S. Choi, A. Badolato, L. C. Andreani, E. L. Hu, P. M. Petroff, and D. Bouwmeester, “Self-tuned quantum dot gain in photonic crystal lasers,” Phys. Rev. Lett. 96(12), 127404 (2006).
[Crossref] [PubMed]

Bao, J.

C. J. Barrelet, J. Bao, M. Loncar, H.-G. Park, F. Capasso, and C. M. Lieber, “Hybrid single-nanowire photonic crystal and microresonator structures,” Nano Lett. 6(1), 11–15 (2006).
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Bao, X.-Y.

W. Wei, X.-Y. Bao, C. Soci, Y. Ding, Z.-L. Wang, and D. Wang, “Direct heteroepitaxy of vertical InAs nanowires on Si substrates for broad band photovoltaics and photodetection,” Nano Lett. 9(8), 2926–2934 (2009).
[Crossref] [PubMed]

X.-Y. Bao, C. Soci, D. Susac, J. Bratvold, D. P. R. Aplin, W. Wei, C.-Y. Chen, S. A. Dayeh, K. L. Kavanagh, and D. Wang, “Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapor deposition,” Nano Lett. 8(11), 3755–3760 (2008).
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Barrelet, C. J.

H.-G. Park, F. Qian, C. J. Barrelet, and Y. Li, “Microstadium single-nanowire laser,” Appl. Phys. Lett. 91(25), 251115 (2007).
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C. J. Barrelet, J. Bao, M. Loncar, H.-G. Park, F. Capasso, and C. M. Lieber, “Hybrid single-nanowire photonic crystal and microresonator structures,” Nano Lett. 6(1), 11–15 (2006).
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Beaudoin, G.

Beveratos, A.

Bhattacharya, P.

J. Heo, W. Guo, and P. Bhattacharya, “Monolithic single GaN nanowire laser with photonic crystal microcavity on silicon,” Appl. Phys. Lett. 98(2), 021110 (2011).
[Crossref]

Bouwmeester, D.

Y. S. Choi, M. T. Rakher, K. Hennessy, S. Strauf, A. Badolato, P. M. Petroff, D. Bouwmeester, and E. L. Hu, “Evolution of the onset of coherence in a family of photonic crystal nanolasers,” Appl. Phys. Lett. 91(3), 031108 (2007).
[Crossref]

S. Strauf, K. Hennessy, M. T. Rakher, Y. S. Choi, A. Badolato, L. C. Andreani, E. L. Hu, P. M. Petroff, and D. Bouwmeester, “Self-tuned quantum dot gain in photonic crystal lasers,” Phys. Rev. Lett. 96(12), 127404 (2006).
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Braive, R.

Bratvold, J.

X.-Y. Bao, C. Soci, D. Susac, J. Bratvold, D. P. R. Aplin, W. Wei, C.-Y. Chen, S. A. Dayeh, K. L. Kavanagh, and D. Wang, “Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapor deposition,” Nano Lett. 8(11), 3755–3760 (2008).
[Crossref] [PubMed]

Cai, Z.-P.

.-Q. Wang, Y.-Z. Huang, Q. Chen, and Z.-P. Cai, “Analysis of mode quality factors and mode reflectivities for nanowire cavity by FDTD technique,” IEEE J. Quantum Electron. 42(2), 146–151 (2006).
[Crossref]

Cao, J.-R.

Capasso, F.

C. J. Barrelet, J. Bao, M. Loncar, H.-G. Park, F. Capasso, and C. M. Lieber, “Hybrid single-nanowire photonic crystal and microresonator structures,” Nano Lett. 6(1), 11–15 (2006).
[Crossref] [PubMed]

Chalcraft, A. R. A.

A. R. A. Chalcraft, S. Lam, D. O'Brien, T. F. Krauss, M. Sahin, D. Szymanski, D. Sanvitto, R. Oulton, M. S. Skolnick, A. M. Fox, D. M. Whittaker, H. Y. Liu, and M. Hopkinson, “Mode structure of the L3 photonic crystal cavity,” Appl. Phys. Lett. 90(24), 241117 (2007).
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Chang-Hasnain, C.

R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
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Chen, C.-Y.

X.-Y. Bao, C. Soci, D. Susac, J. Bratvold, D. P. R. Aplin, W. Wei, C.-Y. Chen, S. A. Dayeh, K. L. Kavanagh, and D. Wang, “Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapor deposition,” Nano Lett. 8(11), 3755–3760 (2008).
[Crossref] [PubMed]

Chen, L.

L. Chen and E. Towe, “Nanowire lasers with distributed-Bragg-reflector mirrors,” Appl. Phys. Lett. 89(5), 053125 (2006).
[Crossref]

Chen, P.

Chen, Q.

.-Q. Wang, Y.-Z. Huang, Q. Chen, and Z.-P. Cai, “Analysis of mode quality factors and mode reflectivities for nanowire cavity by FDTD technique,” IEEE J. Quantum Electron. 42(2), 146–151 (2006).
[Crossref]

Chen, R.

R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[Crossref]

Chin, A. H.

A. H. Chin, S. Vaddiraju, A. V. Maslov, C. Z. Ning, M. K. Sunkara, and M. Meyyappan, “Near-infrared semiconductor subwavelength-wire lasers,” Appl. Phys. Lett. 88(16), 163115 (2006).
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Choi, H.-J.

J. C. Johnson, H.-J. Choi, K. P. Knutsen, R. D. Schaller, P. Yang, and R. J. Saykally, “Single gallium nitride nanowire lasers,” Nat. Mater. 1(2), 106–110 (2002).
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Choi, Y. S.

Y. S. Choi, M. T. Rakher, K. Hennessy, S. Strauf, A. Badolato, P. M. Petroff, D. Bouwmeester, and E. L. Hu, “Evolution of the onset of coherence in a family of photonic crystal nanolasers,” Appl. Phys. Lett. 91(3), 031108 (2007).
[Crossref]

S. Strauf, K. Hennessy, M. T. Rakher, Y. S. Choi, A. Badolato, L. C. Andreani, E. L. Hu, P. M. Petroff, and D. Bouwmeester, “Self-tuned quantum dot gain in photonic crystal lasers,” Phys. Rev. Lett. 96(12), 127404 (2006).
[Crossref] [PubMed]

Chuang, L. C.

R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[Crossref]

Claudon, J.

Colman, P.

N.-V.-Q. Tran, S. Combrié, P. Colman, A. De Rossi, and T. Mei, “Vertical high emission in photonic crystal nanocavities by band-folding design,” Phys. Rev. B 82(7), 075120 (2010).
[Crossref]

Combrié, S.

N.-V.-Q. Tran, S. Combrié, P. Colman, A. De Rossi, and T. Mei, “Vertical high emission in photonic crystal nanocavities by band-folding design,” Phys. Rev. B 82(7), 075120 (2010).
[Crossref]

N.-V.-Q. Tran, S. Combrié, and A. De Rossi, “Directive emission from high-Q photonic crystal cavities through band folding,” Phys. Rev. B 79(4), 041101 (2009).
[Crossref]

Costard, E.

J. M. Gérard, B. Sermage, B. Gayral, B. Legrand, E. Costard, and V. Thierry-Mieg, “Enhanced spontaneous emission by quantum boxes in a monolithic optical microcavity,” Phys. Rev. Lett. 81(5), 1110–1113 (1998).
[Crossref]

Dai, L.

Y. Xiao, C. Meng, P. Wang, Y. Ye, H. Yu, S. Wang, F. Gu, L. Dai, and L. Tong, “Single-nanowire single-mode laser,” Nano Lett. 11(3), 1122–1126 (2011).
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Dai, X.

C. Wilhelm, A. Larrue, X. Dai, D. Migas, and C. Soci, “Anisotropic photonic properties of III-V nanowires in the zinc-blende and wurtzite phase,” Nanoscale 4(5), 1446–1454 (2012).
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Dapkus, P. D.

Dayeh, S. A.

X.-Y. Bao, C. Soci, D. Susac, J. Bratvold, D. P. R. Aplin, W. Wei, C.-Y. Chen, S. A. Dayeh, K. L. Kavanagh, and D. Wang, “Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapor deposition,” Nano Lett. 8(11), 3755–3760 (2008).
[Crossref] [PubMed]

De Rossi, A.

N.-V.-Q. Tran, S. Combrié, P. Colman, A. De Rossi, and T. Mei, “Vertical high emission in photonic crystal nanocavities by band-folding design,” Phys. Rev. B 82(7), 075120 (2010).
[Crossref]

N.-V.-Q. Tran, S. Combrié, and A. De Rossi, “Directive emission from high-Q photonic crystal cavities through band folding,” Phys. Rev. B 79(4), 041101 (2009).
[Crossref]

Deppe, D. G.

T. Yoshie, A. Scherer, J. Hendrickson, G. Khitrova, H. M. Gibbs, G. Rupper, C. Ell, O. B. Shchekin, and D. G. Deppe, “Vacuum Rabi splitting with a single quantum dot in a photonic crystal nanocavity,” Nature 432(7014), 200–203 (2004).
[Crossref] [PubMed]

Désières, Y.

Ding, Y.

W. Wei, X.-Y. Bao, C. Soci, Y. Ding, Z.-L. Wang, and D. Wang, “Direct heteroepitaxy of vertical InAs nanowires on Si substrates for broad band photovoltaics and photodetection,” Nano Lett. 9(8), 2926–2934 (2009).
[Crossref] [PubMed]

Dorenbos, S. N.

S. N. Dorenbos, H. Sasakura, M. P. van Kouwen, N. Akopian, S. Adachi, N. Namekata, M. Jo, J. Motohisa, Y. Kobayashi, K. Tomioka, T. Fukui, S. Inoue, H. Kumano, C. M. Natarajan, R. H. Hadfield, T. Zijlstra, T. M. Klapwijk, V. Zwiller, and I. Suemune, “Position controlled nanowires for infrared single photon emission,” Appl. Phys. Lett. 97(17), 171106 (2010).
[Crossref]

Duan, X.

X. Duan, Y. Huang, R. Agarwal, and C. M. Lieber, “Single-nanowire electrically driven lasers,” Nature 421(6920), 241–245 (2003).
[Crossref] [PubMed]

Ee, H.-S.

M.-K. Seo, J.-K. Yang, K.-Y. Jeong, H.-G. Park, F. Qian, H.-S. Ee, Y.-S. No, and Y.-H. Lee, “Modal characteristics in a single-nanowire cavity with a triangular cross section,” Nano Lett. 8(12), 4534–4538 (2008).
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Ell, C.

T. Yoshie, A. Scherer, J. Hendrickson, G. Khitrova, H. M. Gibbs, G. Rupper, C. Ell, O. B. Shchekin, and D. G. Deppe, “Vacuum Rabi splitting with a single quantum dot in a photonic crystal nanocavity,” Nature 432(7014), 200–203 (2004).
[Crossref] [PubMed]

Ellis, B.

B. Ellis, M. A. Mayer, G. Shambat, T. Sarmiento, J. Harris, E. E. Haller, and J. Vuckovic, “Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser,” Nat. Photonics 5(5), 297–300 (2011).
[Crossref]

Forchel, A.

J. Heinrich, A. Huggenberger, T. Heindel, S. Reitzenstein, S. Hofling, L. Worschech, and A. Forchel, “Single photon emission from positioned GaAs/AlGaAs photonic nanowires,” Appl. Phys. Lett. 96(21), 211117 (2010).
[Crossref]

Fox, A. M.

A. R. A. Chalcraft, S. Lam, D. O'Brien, T. F. Krauss, M. Sahin, D. Szymanski, D. Sanvitto, R. Oulton, M. S. Skolnick, A. M. Fox, D. M. Whittaker, H. Y. Liu, and M. Hopkinson, “Mode structure of the L3 photonic crystal cavity,” Appl. Phys. Lett. 90(24), 241117 (2007).
[Crossref]

Friedler, I.

Fujita, M.

S. Noda, M. Fujita, and T. Asano, “Spontaneous-emission control by photonic crystals and nanocavities,” Nat. Photonics 1(8), 449–458 (2007).
[Crossref]

M. Fujita, A. Sakai, and T. Baba, “Ultrasmall and ultralow threshold GaInAsP-InP microdisk injection lasers: design, fabrication, lasing characteristics, and spontaneous emission factor,” IEEE J. Sel. Top. Quantum Electron. 5(3), 673–681 (1999).
[Crossref]

Fukui, T.

K. Tomioka, T. Tanaka, S. Hara, K. Hiruma, and T. Fukui, “III-V nanowires on Si substrate: selective-area growth and device applications,” IEEE J. Sel. Top. Quantum Electron. 17(4), 1112–1129 (2011).
[Crossref]

S. N. Dorenbos, H. Sasakura, M. P. van Kouwen, N. Akopian, S. Adachi, N. Namekata, M. Jo, J. Motohisa, Y. Kobayashi, K. Tomioka, T. Fukui, S. Inoue, H. Kumano, C. M. Natarajan, R. H. Hadfield, T. Zijlstra, T. M. Klapwijk, V. Zwiller, and I. Suemune, “Position controlled nanowires for infrared single photon emission,” Appl. Phys. Lett. 97(17), 171106 (2010).
[Crossref]

B. Hua, J. Motohisa, Y. Kobayashi, S. Hara, and T. Fukui, “Single GaAs/GaAsP coaxial core-shell nanowire lasers,” Nano Lett. 9(1), 112–116 (2009).
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L. Yang, J. Motohisa, T. Fukui, L. X. Jia, L. Zhang, M. M. Geng, P. Chen, Y. L. Liu, and T. Wang, “Fabry-Pérot microcavity modes observed in the micro-photoluminescence spectra of the single nanowire with InGaAs/GaAs heterostructure,” Opt. Express 17(11), 9337–9346 (2009).
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Gao, Q.

H. J. Joyce, Q. Gao, H. Hoe Tan, C. Jagadish, Y. Kim, J. Zou, L. M. Smith, H. E. Jackson, J. M. Yarrison-Rice, P. Parkinson, and M. B. Johnston, “III–V semiconductor nanowires for optoelectronic device applications,” Prog. Quantum Electron. 35(2-3), 23–75 (2011).
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Gayral, B.

A.-L. Henneghien, B. Gayral, Y. Désières, and J.-M. Gérard, “Simulation of waveguiding and emitting properties of semiconductor nanowires with hexagonal or circular sections,” J. Opt. Soc. Am. B 26(12), 2396–2403 (2009).
[Crossref]

J. M. Gérard, B. Sermage, B. Gayral, B. Legrand, E. Costard, and V. Thierry-Mieg, “Enhanced spontaneous emission by quantum boxes in a monolithic optical microcavity,” Phys. Rev. Lett. 81(5), 1110–1113 (1998).
[Crossref]

Geng, M. M.

Gérard, J. M.

I. Friedler, C. Sauvan, J. P. Hugonin, P. Lalanne, J. Claudon, and J. M. Gérard, “Solid-state single photon sources: the nanowire antenna,” Opt. Express 17(4), 2095–2110 (2009).
[Crossref] [PubMed]

J. M. Gérard, B. Sermage, B. Gayral, B. Legrand, E. Costard, and V. Thierry-Mieg, “Enhanced spontaneous emission by quantum boxes in a monolithic optical microcavity,” Phys. Rev. Lett. 81(5), 1110–1113 (1998).
[Crossref]

Gérard, J.-M.

A.-L. Henneghien, B. Gayral, Y. Désières, and J.-M. Gérard, “Simulation of waveguiding and emitting properties of semiconductor nanowires with hexagonal or circular sections,” J. Opt. Soc. Am. B 26(12), 2396–2403 (2009).
[Crossref]

L. C. Andreani, G. Panzarini, and J.-M. Gérard, “Strong-coupling regime for quantum boxes in pillar microcavities: Theory,” Phys. Rev. B 60(19), 13276–13279 (1999).
[Crossref]

Gibbs, H. M.

T. Yoshie, A. Scherer, J. Hendrickson, G. Khitrova, H. M. Gibbs, G. Rupper, C. Ell, O. B. Shchekin, and D. G. Deppe, “Vacuum Rabi splitting with a single quantum dot in a photonic crystal nanocavity,” Nature 432(7014), 200–203 (2004).
[Crossref] [PubMed]

Gregersen, N.

Gu, F.

Y. Xiao, C. Meng, P. Wang, Y. Ye, H. Yu, S. Wang, F. Gu, L. Dai, and L. Tong, “Single-nanowire single-mode laser,” Nano Lett. 11(3), 1122–1126 (2011).
[Crossref] [PubMed]

Guo, W.

J. Heo, W. Guo, and P. Bhattacharya, “Monolithic single GaN nanowire laser with photonic crystal microcavity on silicon,” Appl. Phys. Lett. 98(2), 021110 (2011).
[Crossref]

Haber, L. H.

J. C. Johnson, H. Yan, R. D. Schaller, L. H. Haber, R. J. Saykally, and P. Yang, “Single nanowire lasers,” J. Phys. Chem. B 105(46), 11387–11390 (2001).
[Crossref]

Hadfield, R. H.

S. N. Dorenbos, H. Sasakura, M. P. van Kouwen, N. Akopian, S. Adachi, N. Namekata, M. Jo, J. Motohisa, Y. Kobayashi, K. Tomioka, T. Fukui, S. Inoue, H. Kumano, C. M. Natarajan, R. H. Hadfield, T. Zijlstra, T. M. Klapwijk, V. Zwiller, and I. Suemune, “Position controlled nanowires for infrared single photon emission,” Appl. Phys. Lett. 97(17), 171106 (2010).
[Crossref]

Haller, E. E.

B. Ellis, M. A. Mayer, G. Shambat, T. Sarmiento, J. Harris, E. E. Haller, and J. Vuckovic, “Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser,” Nat. Photonics 5(5), 297–300 (2011).
[Crossref]

Hamano, T.

T. Baba, T. Hamano, F. Koyama, and K. Iga, “Spontaneous emission factor of a microcavity DBR surface-emitting laser,” IEEE J. Quantum Electron. 27(6), 1347–1358 (1991).
[Crossref]

Hara, S.

K. Tomioka, T. Tanaka, S. Hara, K. Hiruma, and T. Fukui, “III-V nanowires on Si substrate: selective-area growth and device applications,” IEEE J. Sel. Top. Quantum Electron. 17(4), 1112–1129 (2011).
[Crossref]

B. Hua, J. Motohisa, Y. Kobayashi, S. Hara, and T. Fukui, “Single GaAs/GaAsP coaxial core-shell nanowire lasers,” Nano Lett. 9(1), 112–116 (2009).
[Crossref] [PubMed]

Harris, J.

B. Ellis, M. A. Mayer, G. Shambat, T. Sarmiento, J. Harris, E. E. Haller, and J. Vuckovic, “Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser,” Nat. Photonics 5(5), 297–300 (2011).
[Crossref]

Heindel, T.

J. Heinrich, A. Huggenberger, T. Heindel, S. Reitzenstein, S. Hofling, L. Worschech, and A. Forchel, “Single photon emission from positioned GaAs/AlGaAs photonic nanowires,” Appl. Phys. Lett. 96(21), 211117 (2010).
[Crossref]

Heinrich, J.

J. Heinrich, A. Huggenberger, T. Heindel, S. Reitzenstein, S. Hofling, L. Worschech, and A. Forchel, “Single photon emission from positioned GaAs/AlGaAs photonic nanowires,” Appl. Phys. Lett. 96(21), 211117 (2010).
[Crossref]

Hendrickson, J.

T. Yoshie, A. Scherer, J. Hendrickson, G. Khitrova, H. M. Gibbs, G. Rupper, C. Ell, O. B. Shchekin, and D. G. Deppe, “Vacuum Rabi splitting with a single quantum dot in a photonic crystal nanocavity,” Nature 432(7014), 200–203 (2004).
[Crossref] [PubMed]

Henneghien, A.-L.

Hennessy, K.

Y. S. Choi, M. T. Rakher, K. Hennessy, S. Strauf, A. Badolato, P. M. Petroff, D. Bouwmeester, and E. L. Hu, “Evolution of the onset of coherence in a family of photonic crystal nanolasers,” Appl. Phys. Lett. 91(3), 031108 (2007).
[Crossref]

S. Strauf, K. Hennessy, M. T. Rakher, Y. S. Choi, A. Badolato, L. C. Andreani, E. L. Hu, P. M. Petroff, and D. Bouwmeester, “Self-tuned quantum dot gain in photonic crystal lasers,” Phys. Rev. Lett. 96(12), 127404 (2006).
[Crossref] [PubMed]

Heo, J.

J. Heo, W. Guo, and P. Bhattacharya, “Monolithic single GaN nanowire laser with photonic crystal microcavity on silicon,” Appl. Phys. Lett. 98(2), 021110 (2011).
[Crossref]

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Y. S. Choi, M. T. Rakher, K. Hennessy, S. Strauf, A. Badolato, P. M. Petroff, D. Bouwmeester, and E. L. Hu, “Evolution of the onset of coherence in a family of photonic crystal nanolasers,” Appl. Phys. Lett. 91(3), 031108 (2007).
[Crossref]

S. Strauf, K. Hennessy, M. T. Rakher, Y. S. Choi, A. Badolato, L. C. Andreani, E. L. Hu, P. M. Petroff, and D. Bouwmeester, “Self-tuned quantum dot gain in photonic crystal lasers,” Phys. Rev. Lett. 96(12), 127404 (2006).
[Crossref] [PubMed]

Reitzenstein, S.

J. Heinrich, A. Huggenberger, T. Heindel, S. Reitzenstein, S. Hofling, L. Worschech, and A. Forchel, “Single photon emission from positioned GaAs/AlGaAs photonic nanowires,” Appl. Phys. Lett. 96(21), 211117 (2010).
[Crossref]

Robert-Philip, I.

Rupper, G.

T. Yoshie, A. Scherer, J. Hendrickson, G. Khitrova, H. M. Gibbs, G. Rupper, C. Ell, O. B. Shchekin, and D. G. Deppe, “Vacuum Rabi splitting with a single quantum dot in a photonic crystal nanocavity,” Nature 432(7014), 200–203 (2004).
[Crossref] [PubMed]

Sagnes, I.

Sahin, M.

A. R. A. Chalcraft, S. Lam, D. O'Brien, T. F. Krauss, M. Sahin, D. Szymanski, D. Sanvitto, R. Oulton, M. S. Skolnick, A. M. Fox, D. M. Whittaker, H. Y. Liu, and M. Hopkinson, “Mode structure of the L3 photonic crystal cavity,” Appl. Phys. Lett. 90(24), 241117 (2007).
[Crossref]

Sakai, A.

M. Fujita, A. Sakai, and T. Baba, “Ultrasmall and ultralow threshold GaInAsP-InP microdisk injection lasers: design, fabrication, lasing characteristics, and spontaneous emission factor,” IEEE J. Sel. Top. Quantum Electron. 5(3), 673–681 (1999).
[Crossref]

Sano, D.

T. Baba and D. Sano, “Low-threshold lasing and Purcell effect in microdisk lasers at room temperature,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1340–1346 (2003).
[Crossref]

Sanvitto, D.

A. R. A. Chalcraft, S. Lam, D. O'Brien, T. F. Krauss, M. Sahin, D. Szymanski, D. Sanvitto, R. Oulton, M. S. Skolnick, A. M. Fox, D. M. Whittaker, H. Y. Liu, and M. Hopkinson, “Mode structure of the L3 photonic crystal cavity,” Appl. Phys. Lett. 90(24), 241117 (2007).
[Crossref]

Sarmiento, T.

B. Ellis, M. A. Mayer, G. Shambat, T. Sarmiento, J. Harris, E. E. Haller, and J. Vuckovic, “Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser,” Nat. Photonics 5(5), 297–300 (2011).
[Crossref]

Sasakura, H.

S. N. Dorenbos, H. Sasakura, M. P. van Kouwen, N. Akopian, S. Adachi, N. Namekata, M. Jo, J. Motohisa, Y. Kobayashi, K. Tomioka, T. Fukui, S. Inoue, H. Kumano, C. M. Natarajan, R. H. Hadfield, T. Zijlstra, T. M. Klapwijk, V. Zwiller, and I. Suemune, “Position controlled nanowires for infrared single photon emission,” Appl. Phys. Lett. 97(17), 171106 (2010).
[Crossref]

Sato, T.

S. Matsuo, A. Shinya, T. Kakitsuka, K. Nozaki, T. Segawa, T. Sato, Y. Kawaguchi, and M. Notomi, “High-speed ultracompact buried heterostructure photonic-crystal laser with 13 fJ of energy consumed per bit transmitted,” Nat. Photonics 4(9), 648–654 (2010).
[Crossref]

Sauvan, C.

I. Friedler, C. Sauvan, J. P. Hugonin, P. Lalanne, J. Claudon, and J. M. Gérard, “Solid-state single photon sources: the nanowire antenna,” Opt. Express 17(4), 2095–2110 (2009).
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C. Sauvan, P. Lalanne, and J. P. Hugonin, “Slow-wave effect and mode-profile matching in photonic crystal microcavities,” Phys. Rev. B 71(16), 165118 (2005).
[Crossref]

Saykally, R. J.

J. C. Johnson, H.-J. Choi, K. P. Knutsen, R. D. Schaller, P. Yang, and R. J. Saykally, “Single gallium nitride nanowire lasers,” Nat. Mater. 1(2), 106–110 (2002).
[Crossref] [PubMed]

J. C. Johnson, H. Yan, R. D. Schaller, L. H. Haber, R. J. Saykally, and P. Yang, “Single nanowire lasers,” J. Phys. Chem. B 105(46), 11387–11390 (2001).
[Crossref]

Schaller, R. D.

J. C. Johnson, H.-J. Choi, K. P. Knutsen, R. D. Schaller, P. Yang, and R. J. Saykally, “Single gallium nitride nanowire lasers,” Nat. Mater. 1(2), 106–110 (2002).
[Crossref] [PubMed]

J. C. Johnson, H. Yan, R. D. Schaller, L. H. Haber, R. J. Saykally, and P. Yang, “Single nanowire lasers,” J. Phys. Chem. B 105(46), 11387–11390 (2001).
[Crossref]

Scherer, A.

T. Yoshie, A. Scherer, J. Hendrickson, G. Khitrova, H. M. Gibbs, G. Rupper, C. Ell, O. B. Shchekin, and D. G. Deppe, “Vacuum Rabi splitting with a single quantum dot in a photonic crystal nanocavity,” Nature 432(7014), 200–203 (2004).
[Crossref] [PubMed]

J. Vuckovic, M. Loncar, H. Mabuchi, and A. Scherer, “Optimization of the Q factor in photonic crystal microcavities,” IEEE J. Quantum Electron. 38(7), 850–856 (2002).
[Crossref]

Sedgwick, F. G.

R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[Crossref]

Segawa, T.

S. Matsuo, A. Shinya, T. Kakitsuka, K. Nozaki, T. Segawa, T. Sato, Y. Kawaguchi, and M. Notomi, “High-speed ultracompact buried heterostructure photonic-crystal laser with 13 fJ of energy consumed per bit transmitted,” Nat. Photonics 4(9), 648–654 (2010).
[Crossref]

Seo, M.-K.

M.-K. Seo, J.-K. Yang, K.-Y. Jeong, H.-G. Park, F. Qian, H.-S. Ee, Y.-S. No, and Y.-H. Lee, “Modal characteristics in a single-nanowire cavity with a triangular cross section,” Nano Lett. 8(12), 4534–4538 (2008).
[Crossref] [PubMed]

Sermage, B.

J. M. Gérard, B. Sermage, B. Gayral, B. Legrand, E. Costard, and V. Thierry-Mieg, “Enhanced spontaneous emission by quantum boxes in a monolithic optical microcavity,” Phys. Rev. Lett. 81(5), 1110–1113 (1998).
[Crossref]

Shambat, G.

B. Ellis, M. A. Mayer, G. Shambat, T. Sarmiento, J. Harris, E. E. Haller, and J. Vuckovic, “Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser,” Nat. Photonics 5(5), 297–300 (2011).
[Crossref]

Shchekin, O. B.

T. Yoshie, A. Scherer, J. Hendrickson, G. Khitrova, H. M. Gibbs, G. Rupper, C. Ell, O. B. Shchekin, and D. G. Deppe, “Vacuum Rabi splitting with a single quantum dot in a photonic crystal nanocavity,” Nature 432(7014), 200–203 (2004).
[Crossref] [PubMed]

Shinya, A.

S. Matsuo, A. Shinya, T. Kakitsuka, K. Nozaki, T. Segawa, T. Sato, Y. Kawaguchi, and M. Notomi, “High-speed ultracompact buried heterostructure photonic-crystal laser with 13 fJ of energy consumed per bit transmitted,” Nat. Photonics 4(9), 648–654 (2010).
[Crossref]

Skolnick, M. S.

A. R. A. Chalcraft, S. Lam, D. O'Brien, T. F. Krauss, M. Sahin, D. Szymanski, D. Sanvitto, R. Oulton, M. S. Skolnick, A. M. Fox, D. M. Whittaker, H. Y. Liu, and M. Hopkinson, “Mode structure of the L3 photonic crystal cavity,” Appl. Phys. Lett. 90(24), 241117 (2007).
[Crossref]

Smith, L. M.

H. J. Joyce, Q. Gao, H. Hoe Tan, C. Jagadish, Y. Kim, J. Zou, L. M. Smith, H. E. Jackson, J. M. Yarrison-Rice, P. Parkinson, and M. B. Johnston, “III–V semiconductor nanowires for optoelectronic device applications,” Prog. Quantum Electron. 35(2-3), 23–75 (2011).
[Crossref]

Soci, C.

C. Wilhelm, A. Larrue, X. Dai, D. Migas, and C. Soci, “Anisotropic photonic properties of III-V nanowires in the zinc-blende and wurtzite phase,” Nanoscale 4(5), 1446–1454 (2012).
[Crossref] [PubMed]

W. Wei, X.-Y. Bao, C. Soci, Y. Ding, Z.-L. Wang, and D. Wang, “Direct heteroepitaxy of vertical InAs nanowires on Si substrates for broad band photovoltaics and photodetection,” Nano Lett. 9(8), 2926–2934 (2009).
[Crossref] [PubMed]

X.-Y. Bao, C. Soci, D. Susac, J. Bratvold, D. P. R. Aplin, W. Wei, C.-Y. Chen, S. A. Dayeh, K. L. Kavanagh, and D. Wang, “Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapor deposition,” Nano Lett. 8(11), 3755–3760 (2008).
[Crossref] [PubMed]

Spirkoska, D.

D. Spirkoska, G. Abstreiter, and A. F. Morral, “GaAs nanowires and related prismatic heterostructures,” Semicond. Sci. Technol. 24(11), 113001 (2009).
[Crossref]

Stapleton, A.

Strauf, S.

Y. S. Choi, M. T. Rakher, K. Hennessy, S. Strauf, A. Badolato, P. M. Petroff, D. Bouwmeester, and E. L. Hu, “Evolution of the onset of coherence in a family of photonic crystal nanolasers,” Appl. Phys. Lett. 91(3), 031108 (2007).
[Crossref]

S. Strauf, K. Hennessy, M. T. Rakher, Y. S. Choi, A. Badolato, L. C. Andreani, E. L. Hu, P. M. Petroff, and D. Bouwmeester, “Self-tuned quantum dot gain in photonic crystal lasers,” Phys. Rev. Lett. 96(12), 127404 (2006).
[Crossref] [PubMed]

Suemune, I.

S. N. Dorenbos, H. Sasakura, M. P. van Kouwen, N. Akopian, S. Adachi, N. Namekata, M. Jo, J. Motohisa, Y. Kobayashi, K. Tomioka, T. Fukui, S. Inoue, H. Kumano, C. M. Natarajan, R. H. Hadfield, T. Zijlstra, T. M. Klapwijk, V. Zwiller, and I. Suemune, “Position controlled nanowires for infrared single photon emission,” Appl. Phys. Lett. 97(17), 171106 (2010).
[Crossref]

Suhr, T.

Sunkara, M. K.

A. H. Chin, S. Vaddiraju, A. V. Maslov, C. Z. Ning, M. K. Sunkara, and M. Meyyappan, “Near-infrared semiconductor subwavelength-wire lasers,” Appl. Phys. Lett. 88(16), 163115 (2006).
[Crossref]

Susac, D.

X.-Y. Bao, C. Soci, D. Susac, J. Bratvold, D. P. R. Aplin, W. Wei, C.-Y. Chen, S. A. Dayeh, K. L. Kavanagh, and D. Wang, “Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapor deposition,” Nano Lett. 8(11), 3755–3760 (2008).
[Crossref] [PubMed]

Szymanski, D.

A. R. A. Chalcraft, S. Lam, D. O'Brien, T. F. Krauss, M. Sahin, D. Szymanski, D. Sanvitto, R. Oulton, M. S. Skolnick, A. M. Fox, D. M. Whittaker, H. Y. Liu, and M. Hopkinson, “Mode structure of the L3 photonic crystal cavity,” Appl. Phys. Lett. 90(24), 241117 (2007).
[Crossref]

Talneau, A.

Tanaka, T.

K. Tomioka, T. Tanaka, S. Hara, K. Hiruma, and T. Fukui, “III-V nanowires on Si substrate: selective-area growth and device applications,” IEEE J. Sel. Top. Quantum Electron. 17(4), 1112–1129 (2011).
[Crossref]

Thierry-Mieg, V.

J. M. Gérard, B. Sermage, B. Gayral, B. Legrand, E. Costard, and V. Thierry-Mieg, “Enhanced spontaneous emission by quantum boxes in a monolithic optical microcavity,” Phys. Rev. Lett. 81(5), 1110–1113 (1998).
[Crossref]

Tomioka, K.

K. Tomioka, T. Tanaka, S. Hara, K. Hiruma, and T. Fukui, “III-V nanowires on Si substrate: selective-area growth and device applications,” IEEE J. Sel. Top. Quantum Electron. 17(4), 1112–1129 (2011).
[Crossref]

S. N. Dorenbos, H. Sasakura, M. P. van Kouwen, N. Akopian, S. Adachi, N. Namekata, M. Jo, J. Motohisa, Y. Kobayashi, K. Tomioka, T. Fukui, S. Inoue, H. Kumano, C. M. Natarajan, R. H. Hadfield, T. Zijlstra, T. M. Klapwijk, V. Zwiller, and I. Suemune, “Position controlled nanowires for infrared single photon emission,” Appl. Phys. Lett. 97(17), 171106 (2010).
[Crossref]

Tong, L.

Y. Xiao, C. Meng, P. Wang, Y. Ye, H. Yu, S. Wang, F. Gu, L. Dai, and L. Tong, “Single-nanowire single-mode laser,” Nano Lett. 11(3), 1122–1126 (2011).
[Crossref] [PubMed]

Towe, E.

L. Chen and E. Towe, “Nanowire lasers with distributed-Bragg-reflector mirrors,” Appl. Phys. Lett. 89(5), 053125 (2006).
[Crossref]

Tran, N.-V.-Q.

N.-V.-Q. Tran, S. Combrié, P. Colman, A. De Rossi, and T. Mei, “Vertical high emission in photonic crystal nanocavities by band-folding design,” Phys. Rev. B 82(7), 075120 (2010).
[Crossref]

N.-V.-Q. Tran, S. Combrié, and A. De Rossi, “Directive emission from high-Q photonic crystal cavities through band folding,” Phys. Rev. B 79(4), 041101 (2009).
[Crossref]

Tran, T.-T. D.

R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[Crossref]

Vaddiraju, S.

A. H. Chin, S. Vaddiraju, A. V. Maslov, C. Z. Ning, M. K. Sunkara, and M. Meyyappan, “Near-infrared semiconductor subwavelength-wire lasers,” Appl. Phys. Lett. 88(16), 163115 (2006).
[Crossref]

van Kouwen, M. P.

S. N. Dorenbos, H. Sasakura, M. P. van Kouwen, N. Akopian, S. Adachi, N. Namekata, M. Jo, J. Motohisa, Y. Kobayashi, K. Tomioka, T. Fukui, S. Inoue, H. Kumano, C. M. Natarajan, R. H. Hadfield, T. Zijlstra, T. M. Klapwijk, V. Zwiller, and I. Suemune, “Position controlled nanowires for infrared single photon emission,” Appl. Phys. Lett. 97(17), 171106 (2010).
[Crossref]

Vuckovic, J.

B. Ellis, M. A. Mayer, G. Shambat, T. Sarmiento, J. Harris, E. E. Haller, and J. Vuckovic, “Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser,” Nat. Photonics 5(5), 297–300 (2011).
[Crossref]

J. Vuckovic, M. Loncar, H. Mabuchi, and A. Scherer, “Optimization of the Q factor in photonic crystal microcavities,” IEEE J. Quantum Electron. 38(7), 850–856 (2002).
[Crossref]

Wang, .-Q.

.-Q. Wang, Y.-Z. Huang, Q. Chen, and Z.-P. Cai, “Analysis of mode quality factors and mode reflectivities for nanowire cavity by FDTD technique,” IEEE J. Quantum Electron. 42(2), 146–151 (2006).
[Crossref]

Wang, D.

W. Wei, X.-Y. Bao, C. Soci, Y. Ding, Z.-L. Wang, and D. Wang, “Direct heteroepitaxy of vertical InAs nanowires on Si substrates for broad band photovoltaics and photodetection,” Nano Lett. 9(8), 2926–2934 (2009).
[Crossref] [PubMed]

X.-Y. Bao, C. Soci, D. Susac, J. Bratvold, D. P. R. Aplin, W. Wei, C.-Y. Chen, S. A. Dayeh, K. L. Kavanagh, and D. Wang, “Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapor deposition,” Nano Lett. 8(11), 3755–3760 (2008).
[Crossref] [PubMed]

Wang, P.

Y. Xiao, C. Meng, P. Wang, Y. Ye, H. Yu, S. Wang, F. Gu, L. Dai, and L. Tong, “Single-nanowire single-mode laser,” Nano Lett. 11(3), 1122–1126 (2011).
[Crossref] [PubMed]

Wang, S.

Y. Xiao, C. Meng, P. Wang, Y. Ye, H. Yu, S. Wang, F. Gu, L. Dai, and L. Tong, “Single-nanowire single-mode laser,” Nano Lett. 11(3), 1122–1126 (2011).
[Crossref] [PubMed]

Wang, T.

Wang, Z.-L.

W. Wei, X.-Y. Bao, C. Soci, Y. Ding, Z.-L. Wang, and D. Wang, “Direct heteroepitaxy of vertical InAs nanowires on Si substrates for broad band photovoltaics and photodetection,” Nano Lett. 9(8), 2926–2934 (2009).
[Crossref] [PubMed]

Wei, W.

W. Wei, X.-Y. Bao, C. Soci, Y. Ding, Z.-L. Wang, and D. Wang, “Direct heteroepitaxy of vertical InAs nanowires on Si substrates for broad band photovoltaics and photodetection,” Nano Lett. 9(8), 2926–2934 (2009).
[Crossref] [PubMed]

X.-Y. Bao, C. Soci, D. Susac, J. Bratvold, D. P. R. Aplin, W. Wei, C.-Y. Chen, S. A. Dayeh, K. L. Kavanagh, and D. Wang, “Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapor deposition,” Nano Lett. 8(11), 3755–3760 (2008).
[Crossref] [PubMed]

Whittaker, D. M.

A. R. A. Chalcraft, S. Lam, D. O'Brien, T. F. Krauss, M. Sahin, D. Szymanski, D. Sanvitto, R. Oulton, M. S. Skolnick, A. M. Fox, D. M. Whittaker, H. Y. Liu, and M. Hopkinson, “Mode structure of the L3 photonic crystal cavity,” Appl. Phys. Lett. 90(24), 241117 (2007).
[Crossref]

Wilhelm, C.

C. Wilhelm, A. Larrue, X. Dai, D. Migas, and C. Soci, “Anisotropic photonic properties of III-V nanowires in the zinc-blende and wurtzite phase,” Nanoscale 4(5), 1446–1454 (2012).
[Crossref] [PubMed]

Worschech, L.

J. Heinrich, A. Huggenberger, T. Heindel, S. Reitzenstein, S. Hofling, L. Worschech, and A. Forchel, “Single photon emission from positioned GaAs/AlGaAs photonic nanowires,” Appl. Phys. Lett. 96(21), 211117 (2010).
[Crossref]

Xiao, Y.

Y. Xiao, C. Meng, P. Wang, Y. Ye, H. Yu, S. Wang, F. Gu, L. Dai, and L. Tong, “Single-nanowire single-mode laser,” Nano Lett. 11(3), 1122–1126 (2011).
[Crossref] [PubMed]

Yan, H.

J. C. Johnson, H. Yan, R. D. Schaller, L. H. Haber, R. J. Saykally, and P. Yang, “Single nanowire lasers,” J. Phys. Chem. B 105(46), 11387–11390 (2001).
[Crossref]

Yang, J.-K.

M.-K. Seo, J.-K. Yang, K.-Y. Jeong, H.-G. Park, F. Qian, H.-S. Ee, Y.-S. No, and Y.-H. Lee, “Modal characteristics in a single-nanowire cavity with a triangular cross section,” Nano Lett. 8(12), 4534–4538 (2008).
[Crossref] [PubMed]

Yang, L.

Yang, P.

J. C. Johnson, H.-J. Choi, K. P. Knutsen, R. D. Schaller, P. Yang, and R. J. Saykally, “Single gallium nitride nanowire lasers,” Nat. Mater. 1(2), 106–110 (2002).
[Crossref] [PubMed]

J. C. Johnson, H. Yan, R. D. Schaller, L. H. Haber, R. J. Saykally, and P. Yang, “Single nanowire lasers,” J. Phys. Chem. B 105(46), 11387–11390 (2001).
[Crossref]

Yarrison-Rice, J. M.

H. J. Joyce, Q. Gao, H. Hoe Tan, C. Jagadish, Y. Kim, J. Zou, L. M. Smith, H. E. Jackson, J. M. Yarrison-Rice, P. Parkinson, and M. B. Johnston, “III–V semiconductor nanowires for optoelectronic device applications,” Prog. Quantum Electron. 35(2-3), 23–75 (2011).
[Crossref]

Ye, Y.

Y. Xiao, C. Meng, P. Wang, Y. Ye, H. Yu, S. Wang, F. Gu, L. Dai, and L. Tong, “Single-nanowire single-mode laser,” Nano Lett. 11(3), 1122–1126 (2011).
[Crossref] [PubMed]

Yoshie, T.

T. Yoshie, A. Scherer, J. Hendrickson, G. Khitrova, H. M. Gibbs, G. Rupper, C. Ell, O. B. Shchekin, and D. G. Deppe, “Vacuum Rabi splitting with a single quantum dot in a photonic crystal nanocavity,” Nature 432(7014), 200–203 (2004).
[Crossref] [PubMed]

Yu, H.

Y. Xiao, C. Meng, P. Wang, Y. Ye, H. Yu, S. Wang, F. Gu, L. Dai, and L. Tong, “Single-nanowire single-mode laser,” Nano Lett. 11(3), 1122–1126 (2011).
[Crossref] [PubMed]

Yvind, K.

Zhang, L.

Zijlstra, T.

S. N. Dorenbos, H. Sasakura, M. P. van Kouwen, N. Akopian, S. Adachi, N. Namekata, M. Jo, J. Motohisa, Y. Kobayashi, K. Tomioka, T. Fukui, S. Inoue, H. Kumano, C. M. Natarajan, R. H. Hadfield, T. Zijlstra, T. M. Klapwijk, V. Zwiller, and I. Suemune, “Position controlled nanowires for infrared single photon emission,” Appl. Phys. Lett. 97(17), 171106 (2010).
[Crossref]

Zou, J.

H. J. Joyce, Q. Gao, H. Hoe Tan, C. Jagadish, Y. Kim, J. Zou, L. M. Smith, H. E. Jackson, J. M. Yarrison-Rice, P. Parkinson, and M. B. Johnston, “III–V semiconductor nanowires for optoelectronic device applications,” Prog. Quantum Electron. 35(2-3), 23–75 (2011).
[Crossref]

Zwiller, V.

S. N. Dorenbos, H. Sasakura, M. P. van Kouwen, N. Akopian, S. Adachi, N. Namekata, M. Jo, J. Motohisa, Y. Kobayashi, K. Tomioka, T. Fukui, S. Inoue, H. Kumano, C. M. Natarajan, R. H. Hadfield, T. Zijlstra, T. M. Klapwijk, V. Zwiller, and I. Suemune, “Position controlled nanowires for infrared single photon emission,” Appl. Phys. Lett. 97(17), 171106 (2010).
[Crossref]

Appl. Phys. Lett. (8)

A. H. Chin, S. Vaddiraju, A. V. Maslov, C. Z. Ning, M. K. Sunkara, and M. Meyyappan, “Near-infrared semiconductor subwavelength-wire lasers,” Appl. Phys. Lett. 88(16), 163115 (2006).
[Crossref]

H.-G. Park, F. Qian, C. J. Barrelet, and Y. Li, “Microstadium single-nanowire laser,” Appl. Phys. Lett. 91(25), 251115 (2007).
[Crossref]

J. Heo, W. Guo, and P. Bhattacharya, “Monolithic single GaN nanowire laser with photonic crystal microcavity on silicon,” Appl. Phys. Lett. 98(2), 021110 (2011).
[Crossref]

L. Chen and E. Towe, “Nanowire lasers with distributed-Bragg-reflector mirrors,” Appl. Phys. Lett. 89(5), 053125 (2006).
[Crossref]

Y. S. Choi, M. T. Rakher, K. Hennessy, S. Strauf, A. Badolato, P. M. Petroff, D. Bouwmeester, and E. L. Hu, “Evolution of the onset of coherence in a family of photonic crystal nanolasers,” Appl. Phys. Lett. 91(3), 031108 (2007).
[Crossref]

A. R. A. Chalcraft, S. Lam, D. O'Brien, T. F. Krauss, M. Sahin, D. Szymanski, D. Sanvitto, R. Oulton, M. S. Skolnick, A. M. Fox, D. M. Whittaker, H. Y. Liu, and M. Hopkinson, “Mode structure of the L3 photonic crystal cavity,” Appl. Phys. Lett. 90(24), 241117 (2007).
[Crossref]

J. Heinrich, A. Huggenberger, T. Heindel, S. Reitzenstein, S. Hofling, L. Worschech, and A. Forchel, “Single photon emission from positioned GaAs/AlGaAs photonic nanowires,” Appl. Phys. Lett. 96(21), 211117 (2010).
[Crossref]

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Figures (7)

Fig. 1
Fig. 1

Effective index of the HE11 and TE01 propagating modes in an infinitely long GaAs nanowire with hexagonal cross section as a function of the nanowire diameter. The grayed area represents the single-mode guiding regime. The inset shows a schematic of the infinite waveguide.

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Fig. 2
Fig. 2

Electric field intensity of resonant mode in a Fabry-Perot cavity formed by a GaAs nanowire with an InGaP substrate (a) or a 100 nm metallic layer (b) as the bottom mirrors. The nanowire length is L = 3 μm and its inner diameter D = 165 nm.

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Fig. 3
Fig. 3

(Left) Schematic of the modified L3 photonic crystal cavity. The dashed red hexagon illustrates the position of the vertical nanowire on top of the photonic crystal slab. (Right) Electric field intensity distribution of the fundamental resonant mode of the bare L3 cavity.

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Fig. 4
Fig. 4

Dependence of the overall quality factor Q (a), the overlap integral Γ of the cavity mode with the nanowire (b), the spontaneous emission factor β (c), and the gain at threshold gth (d) on nanowire radius and length.

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Fig. 5
Fig. 5

Side view of the electric field intensity (|E|2) distribution and Fourier transform of the electric field just above the photonic crystal membrane. The nanowire dimensions are r = 0.10a and L = 5a (a,d), r = 0.20a and L = 5a (b,e), r = 0.35a and L = 5a (c,f). The dashed green circles in (d-f) represent the cross section of the light cone.

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Fig. 6
Fig. 6

Far-field radiation pattern of the bare L3 cavity (a), and the L3 cavity with a nanowire on top (c-d). The corresponding nanowire dimensions are: r = 0.10a and L = a (b), r = 0.20a and L = a (c), and r = 0.35a and L = 5a (d). The solid blue circle represents the ideal collection angle of an objective with numerical aperture of 0.4.

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Fig. 7
Fig. 7

Far Field radiation pattern of the bare modified L3 cavity alone (a), and the modified L3 cavity with a nanowire on top (c-d). The corresponding nanowire dimensions are: r = 0.10a and L = a (b) r = 0.20a and L = a(c) and r = 0.35a and L = 5a (d). The solid blue circle represents the ideal collection angle of an objective with numerical aperture of 0.4.

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Tables (1)

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Table 1 Characteristics of the nanowire-PhC structure

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Equations (5)

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β = p Γ r λ 3 4 π 2 n e q 3 V e f f λ Δ λ
Γ = n N W 2 V N W n e q 2 V e f f Γ r
Γ = ∭ N W ε ( r → ) | E ( r → ) | 2 d r 3 ∭ T o t ε ( r → ) | E ( r → ) | 2 d r 3
β = p Γ λ 3 4 π 2 n N W 2 n e q V N W λ Δ λ
g t h = n ω 0 c 1 Γ Q

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