Monolithic integration of III-V nanowire with photonic crystal microcavity for vertical light emission

Alexandre Larrue; Christophe Wilhelm; Gwenaelle Vest; Sylvain Combrié; Alfredo De Rossi; Cesare Soci

doi:10.1364/OE.20.007758

Monolithic integration of III-V nanowire with photonic crystal microcavity for vertical light emission

Alexandre Larrue, Christophe Wilhelm, Gwenaelle Vest, Sylvain Combrié, Alfredo De Rossi, and Cesare Soci

Optics Express
Vol. 20,
Issue 7,
pp. 7758-7770
(2012)
•https://doi.org/10.1364/OE.20.007758

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Alexandre Larrue, Christophe Wilhelm, Gwenaelle Vest, Sylvain Combrié, Alfredo De Rossi, and Cesare Soci, "Monolithic integration of III-V nanowire with photonic crystal microcavity for vertical light emission," Opt. Express 20, 7758-7770 (2012)

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Abstract

A novel photonic structure formed by the monolithic integration of a vertical III-V nanowire on top of a L3 two-dimensional photonic crystal microcavity is proposed to enhance light emission from the nanowire. The impact on the nanowire spontaneous emission rate is evaluated by calculating the spontaneous emission factor β, and the material gain at threshold is used as a figure of merit of this vertical emitting nanolaser. An optimal design is identified for a GaAs nanowire geometry with r = 155 nm and L~1.1 μm, where minimum gain at threshold (g_{th $~ 13 \times 1 0^{3}$} cm⁻¹) and large spontaneous emission factor (β~0.3) are simultaneously achieved. Modification of the directivity of the L3 photonic crystal cavity via the band-folding principle is employed to further optimize the far-field radiation pattern and to increase the directivity of the device. These results lay the foundation for a new approach toward large-scale integration of vertical emitting nanolasers and may enable applications such as intra-chip optical interconnects.

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H. J. Joyce, Q. Gao, H. Hoe Tan, C. Jagadish, Y. Kim, J. Zou, L. M. Smith, H. E. Jackson, J. M. Yarrison-Rice, P. Parkinson, and M. B. Johnston, “III–V semiconductor nanowires for optoelectronic device applications,” Prog. Quantum Electron. 35(2-3), 23–75 (2011).
[Crossref]
C. Wilhelm, A. Larrue, X. Dai, D. Migas, and C. Soci, “Anisotropic photonic properties of III-V nanowires in the zinc-blende and wurtzite phase,” Nanoscale 4(5), 1446–1454 (2012).
[Crossref] [PubMed]
W. Wei, X.-Y. Bao, C. Soci, Y. Ding, Z.-L. Wang, and D. Wang, “Direct heteroepitaxy of vertical InAs nanowires on Si substrates for broad band photovoltaics and photodetection,” Nano Lett. 9(8), 2926–2934 (2009).
[Crossref] [PubMed]
X.-Y. Bao, C. Soci, D. Susac, J. Bratvold, D. P. R. Aplin, W. Wei, C.-Y. Chen, S. A. Dayeh, K. L. Kavanagh, and D. Wang, “Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapor deposition,” Nano Lett. 8(11), 3755–3760 (2008).
[Crossref] [PubMed]
K. Tomioka, T. Tanaka, S. Hara, K. Hiruma, and T. Fukui, “III-V nanowires on Si substrate: selective-area growth and device applications,” IEEE J. Sel. Top. Quantum Electron. 17(4), 1112–1129 (2011).
[Crossref]
A. H. Chin, S. Vaddiraju, A. V. Maslov, C. Z. Ning, M. K. Sunkara, and M. Meyyappan, “Near-infrared semiconductor subwavelength-wire lasers,” Appl. Phys. Lett. 88(16), 163115 (2006).
[Crossref]
J. C. Johnson, H.-J. Choi, K. P. Knutsen, R. D. Schaller, P. Yang, and R. J. Saykally, “Single gallium nitride nanowire lasers,” Nat. Mater. 1(2), 106–110 (2002).
[Crossref] [PubMed]
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[Crossref]
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[Crossref] [PubMed]
Y. Xiao, C. Meng, P. Wang, Y. Ye, H. Yu, S. Wang, F. Gu, L. Dai, and L. Tong, “Single-nanowire single-mode laser,” Nano Lett. 11(3), 1122–1126 (2011).
[Crossref] [PubMed]
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[Crossref] [PubMed]
R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[Crossref]
C. J. Barrelet, J. Bao, M. Loncar, H.-G. Park, F. Capasso, and C. M. Lieber, “Hybrid single-nanowire photonic crystal and microresonator structures,” Nano Lett. 6(1), 11–15 (2006).
[Crossref] [PubMed]
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[Crossref]
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[Crossref]
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[Crossref] [PubMed]
J. Heo, W. Guo, and P. Bhattacharya, “Monolithic single GaN nanowire laser with photonic crystal microcavity on silicon,” Appl. Phys. Lett. 98(2), 021110 (2011).
[Crossref]
L. Yang, J. Motohisa, T. Fukui, L. X. Jia, L. Zhang, M. M. Geng, P. Chen, Y. L. Liu, and T. Wang, “Fabry-Pérot microcavity modes observed in the micro-photoluminescence spectra of the single nanowire with InGaAs/GaAs heterostructure,” Opt. Express 17(11), 9337–9346 (2009).
[Crossref] [PubMed]
C. Z. Ning, “Semiconductor nanolasers,” Phys. Status Solidi 247, 774–788 (2010) (b).
M.-K. Seo, J.-K. Yang, K.-Y. Jeong, H.-G. Park, F. Qian, H.-S. Ee, Y.-S. No, and Y.-H. Lee, “Modal characteristics in a single-nanowire cavity with a triangular cross section,” Nano Lett. 8(12), 4534–4538 (2008).
[Crossref] [PubMed]
A.-L. Henneghien, B. Gayral, Y. Désières, and J.-M. Gérard, “Simulation of waveguiding and emitting properties of semiconductor nanowires with hexagonal or circular sections,” J. Opt. Soc. Am. B 26(12), 2396–2403 (2009).
[Crossref]
.-Q. Wang, Y.-Z. Huang, Q. Chen, and Z.-P. Cai, “Analysis of mode quality factors and mode reflectivities for nanowire cavity by FDTD technique,” IEEE J. Quantum Electron. 42(2), 146–151 (2006).
[Crossref]
A. V. Maslov and C. Z. Ning, “Modal properties of semiconductor nanowires for laser application,” Proc. SPIE 5349, 24–30 (2004).
[Crossref]
I. Friedler, C. Sauvan, J. P. Hugonin, P. Lalanne, J. Claudon, and J. M. Gérard, “Solid-state single photon sources: the nanowire antenna,” Opt. Express 17(4), 2095–2110 (2009).
[Crossref] [PubMed]
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[Crossref]
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[Crossref] [PubMed]
Y. S. Choi, M. T. Rakher, K. Hennessy, S. Strauf, A. Badolato, P. M. Petroff, D. Bouwmeester, and E. L. Hu, “Evolution of the onset of coherence in a family of photonic crystal nanolasers,” Appl. Phys. Lett. 91(3), 031108 (2007).
[Crossref]
T. Baba and D. Sano, “Low-threshold lasing and Purcell effect in microdisk lasers at room temperature,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1340–1346 (2003).
[Crossref]
R. Hostein, R. Braive, L. Le Gratiet, A. Talneau, G. Beaudoin, I. Robert-Philip, I. Sagnes, and A. Beveratos, “Demonstration of coherent emission from high-β photonic crystal nanolasers at room temperature,” Opt. Lett. 35(8), 1154–1156 (2010).
[Crossref] [PubMed]
L. C. Andreani, G. Panzarini, and J.-M. Gérard, “Strong-coupling regime for quantum boxes in pillar microcavities: Theory,” Phys. Rev. B 60(19), 13276–13279 (1999).
[Crossref]
J. M. Gérard, B. Sermage, B. Gayral, B. Legrand, E. Costard, and V. Thierry-Mieg, “Enhanced spontaneous emission by quantum boxes in a monolithic optical microcavity,” Phys. Rev. Lett. 81(5), 1110–1113 (1998).
[Crossref]
T. Suhr, N. Gregersen, K. Yvind, and J. Mørk, “Modulation response of nanoLEDs and nanolasers exploiting Purcell enhanced spontaneous emission,” Opt. Express 18(11), 11230–11241 (2010).
[Crossref] [PubMed]
J. M. Gérard, “Solid-state cavity-quantum electrodynamics with self-assembled quantum dots,” in Single quantum dots, Fundamentals, Applications, and New Concepts, P. Michler, ed. (Springer, Berlin, 2003), pp. 269–314.
T. Baba, “Photonic crystals and microdisk cavities based on GaInAsP-InP system,” IEEE J. Sel. Top. Quantum Electron. 3(3), 808–830 (1997).
[Crossref]
M. Fujita, A. Sakai, and T. Baba, “Ultrasmall and ultralow threshold GaInAsP-InP microdisk injection lasers: design, fabrication, lasing characteristics, and spontaneous emission factor,” IEEE J. Sel. Top. Quantum Electron. 5(3), 673–681 (1999).
[Crossref]
T. Baba, T. Hamano, F. Koyama, and K. Iga, “Spontaneous emission factor of a microcavity DBR surface-emitting laser,” IEEE J. Quantum Electron. 27(6), 1347–1358 (1991).
[Crossref]
D. Spirkoska, G. Abstreiter, and A. F. Morral, “GaAs nanowires and related prismatic heterostructures,” Semicond. Sci. Technol. 24(11), 113001 (2009).
[Crossref]
C. Kim, W. J. Kim, A. Stapleton, J.-R. Cao, J. D. O'Brien, and P. D. Dapkus, “Quality factors in single-defect photonic-crystal lasers with asymmetric cladding layers,” J. Opt. Soc. Am. B 19(8), 1777–1781 (2002).
[Crossref]
S. Matsuo, A. Shinya, T. Kakitsuka, K. Nozaki, T. Segawa, T. Sato, Y. Kawaguchi, and M. Notomi, “High-speed ultracompact buried heterostructure photonic-crystal laser with 13 fJ of energy consumed per bit transmitted,” Nat. Photonics 4(9), 648–654 (2010).
[Crossref]
B. Ellis, M. A. Mayer, G. Shambat, T. Sarmiento, J. Harris, E. E. Haller, and J. Vuckovic, “Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser,” Nat. Photonics 5(5), 297–300 (2011).
[Crossref]
C. Sauvan, P. Lalanne, and J. P. Hugonin, “Slow-wave effect and mode-profile matching in photonic crystal microcavities,” Phys. Rev. B 71(16), 165118 (2005).
[Crossref]
A. R. A. Chalcraft, S. Lam, D. O'Brien, T. F. Krauss, M. Sahin, D. Szymanski, D. Sanvitto, R. Oulton, M. S. Skolnick, A. M. Fox, D. M. Whittaker, H. Y. Liu, and M. Hopkinson, “Mode structure of the L3 photonic crystal cavity,” Appl. Phys. Lett. 90(24), 241117 (2007).
[Crossref]
A. V. Maslov and C. Z. Ning, “Far-field emission of a semiconductor nanowire laser,” Opt. Lett. 29(6), 572–574 (2004).
[Crossref] [PubMed]
N.-V.-Q. Tran, S. Combrié, P. Colman, A. De Rossi, and T. Mei, “Vertical high emission in photonic crystal nanocavities by band-folding design,” Phys. Rev. B 82(7), 075120 (2010).
[Crossref]
J. Vuckovic, M. Loncar, H. Mabuchi, and A. Scherer, “Optimization of the Q factor in photonic crystal microcavities,” IEEE J. Quantum Electron. 38(7), 850–856 (2002).
[Crossref]
J. Heinrich, A. Huggenberger, T. Heindel, S. Reitzenstein, S. Hofling, L. Worschech, and A. Forchel, “Single photon emission from positioned GaAs/AlGaAs photonic nanowires,” Appl. Phys. Lett. 96(21), 211117 (2010).
[Crossref]
S. N. Dorenbos, H. Sasakura, M. P. van Kouwen, N. Akopian, S. Adachi, N. Namekata, M. Jo, J. Motohisa, Y. Kobayashi, K. Tomioka, T. Fukui, S. Inoue, H. Kumano, C. M. Natarajan, R. H. Hadfield, T. Zijlstra, T. M. Klapwijk, V. Zwiller, and I. Suemune, “Position controlled nanowires for infrared single photon emission,” Appl. Phys. Lett. 97(17), 171106 (2010).
[Crossref]
N.-V.-Q. Tran, S. Combrié, and A. De Rossi, “Directive emission from high-Q photonic crystal cavities through band folding,” Phys. Rev. B 79(4), 041101 (2009).
[Crossref]

2012 (1)

C. Wilhelm, A. Larrue, X. Dai, D. Migas, and C. Soci, “Anisotropic photonic properties of III-V nanowires in the zinc-blende and wurtzite phase,” Nanoscale 4(5), 1446–1454 (2012).
[Crossref] [PubMed]

2011 (6)

H. J. Joyce, Q. Gao, H. Hoe Tan, C. Jagadish, Y. Kim, J. Zou, L. M. Smith, H. E. Jackson, J. M. Yarrison-Rice, P. Parkinson, and M. B. Johnston, “III–V semiconductor nanowires for optoelectronic device applications,” Prog. Quantum Electron. 35(2-3), 23–75 (2011).
[Crossref]

K. Tomioka, T. Tanaka, S. Hara, K. Hiruma, and T. Fukui, “III-V nanowires on Si substrate: selective-area growth and device applications,” IEEE J. Sel. Top. Quantum Electron. 17(4), 1112–1129 (2011).
[Crossref]

Y. Xiao, C. Meng, P. Wang, Y. Ye, H. Yu, S. Wang, F. Gu, L. Dai, and L. Tong, “Single-nanowire single-mode laser,” Nano Lett. 11(3), 1122–1126 (2011).
[Crossref] [PubMed]

R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
[Crossref]

J. Heo, W. Guo, and P. Bhattacharya, “Monolithic single GaN nanowire laser with photonic crystal microcavity on silicon,” Appl. Phys. Lett. 98(2), 021110 (2011).
[Crossref]

B. Ellis, M. A. Mayer, G. Shambat, T. Sarmiento, J. Harris, E. E. Haller, and J. Vuckovic, “Ultralow-threshold electrically pumped quantum-dot photonic-crystal nanocavity laser,” Nat. Photonics 5(5), 297–300 (2011).
[Crossref]

2010 (7)

S. Matsuo, A. Shinya, T. Kakitsuka, K. Nozaki, T. Segawa, T. Sato, Y. Kawaguchi, and M. Notomi, “High-speed ultracompact buried heterostructure photonic-crystal laser with 13 fJ of energy consumed per bit transmitted,” Nat. Photonics 4(9), 648–654 (2010).
[Crossref]

J. Heinrich, A. Huggenberger, T. Heindel, S. Reitzenstein, S. Hofling, L. Worschech, and A. Forchel, “Single photon emission from positioned GaAs/AlGaAs photonic nanowires,” Appl. Phys. Lett. 96(21), 211117 (2010).
[Crossref]

S. N. Dorenbos, H. Sasakura, M. P. van Kouwen, N. Akopian, S. Adachi, N. Namekata, M. Jo, J. Motohisa, Y. Kobayashi, K. Tomioka, T. Fukui, S. Inoue, H. Kumano, C. M. Natarajan, R. H. Hadfield, T. Zijlstra, T. M. Klapwijk, V. Zwiller, and I. Suemune, “Position controlled nanowires for infrared single photon emission,” Appl. Phys. Lett. 97(17), 171106 (2010).
[Crossref]

C. Z. Ning, “Semiconductor nanolasers,” Phys. Status Solidi 247, 774–788 (2010) (b).

N.-V.-Q. Tran, S. Combrié, P. Colman, A. De Rossi, and T. Mei, “Vertical high emission in photonic crystal nanocavities by band-folding design,” Phys. Rev. B 82(7), 075120 (2010).
[Crossref]

R. Hostein, R. Braive, L. Le Gratiet, A. Talneau, G. Beaudoin, I. Robert-Philip, I. Sagnes, and A. Beveratos, “Demonstration of coherent emission from high-β photonic crystal nanolasers at room temperature,” Opt. Lett. 35(8), 1154–1156 (2010).
[Crossref] [PubMed]

T. Suhr, N. Gregersen, K. Yvind, and J. Mørk, “Modulation response of nanoLEDs and nanolasers exploiting Purcell enhanced spontaneous emission,” Opt. Express 18(11), 11230–11241 (2010).
[Crossref] [PubMed]

2009 (7)

I. Friedler, C. Sauvan, J. P. Hugonin, P. Lalanne, J. Claudon, and J. M. Gérard, “Solid-state single photon sources: the nanowire antenna,” Opt. Express 17(4), 2095–2110 (2009).
[Crossref] [PubMed]

L. Yang, J. Motohisa, T. Fukui, L. X. Jia, L. Zhang, M. M. Geng, P. Chen, Y. L. Liu, and T. Wang, “Fabry-Pérot microcavity modes observed in the micro-photoluminescence spectra of the single nanowire with InGaAs/GaAs heterostructure,” Opt. Express 17(11), 9337–9346 (2009).
[Crossref] [PubMed]

A.-L. Henneghien, B. Gayral, Y. Désières, and J.-M. Gérard, “Simulation of waveguiding and emitting properties of semiconductor nanowires with hexagonal or circular sections,” J. Opt. Soc. Am. B 26(12), 2396–2403 (2009).
[Crossref]

B. Hua, J. Motohisa, Y. Kobayashi, S. Hara, and T. Fukui, “Single GaAs/GaAsP coaxial core-shell nanowire lasers,” Nano Lett. 9(1), 112–116 (2009).
[Crossref] [PubMed]

W. Wei, X.-Y. Bao, C. Soci, Y. Ding, Z.-L. Wang, and D. Wang, “Direct heteroepitaxy of vertical InAs nanowires on Si substrates for broad band photovoltaics and photodetection,” Nano Lett. 9(8), 2926–2934 (2009).
[Crossref] [PubMed]

N.-V.-Q. Tran, S. Combrié, and A. De Rossi, “Directive emission from high-Q photonic crystal cavities through band folding,” Phys. Rev. B 79(4), 041101 (2009).
[Crossref]

D. Spirkoska, G. Abstreiter, and A. F. Morral, “GaAs nanowires and related prismatic heterostructures,” Semicond. Sci. Technol. 24(11), 113001 (2009).
[Crossref]

2008 (2)

X.-Y. Bao, C. Soci, D. Susac, J. Bratvold, D. P. R. Aplin, W. Wei, C.-Y. Chen, S. A. Dayeh, K. L. Kavanagh, and D. Wang, “Heteroepitaxial growth of vertical GaAs nanowires on Si(111) substrates by metal-organic chemical vapor deposition,” Nano Lett. 8(11), 3755–3760 (2008).
[Crossref] [PubMed]

M.-K. Seo, J.-K. Yang, K.-Y. Jeong, H.-G. Park, F. Qian, H.-S. Ee, Y.-S. No, and Y.-H. Lee, “Modal characteristics in a single-nanowire cavity with a triangular cross section,” Nano Lett. 8(12), 4534–4538 (2008).
[Crossref] [PubMed]

2007 (4)

H.-G. Park, F. Qian, C. J. Barrelet, and Y. Li, “Microstadium single-nanowire laser,” Appl. Phys. Lett. 91(25), 251115 (2007).
[Crossref]

S. Noda, M. Fujita, and T. Asano, “Spontaneous-emission control by photonic crystals and nanocavities,” Nat. Photonics 1(8), 449–458 (2007).
[Crossref]

Y. S. Choi, M. T. Rakher, K. Hennessy, S. Strauf, A. Badolato, P. M. Petroff, D. Bouwmeester, and E. L. Hu, “Evolution of the onset of coherence in a family of photonic crystal nanolasers,” Appl. Phys. Lett. 91(3), 031108 (2007).
[Crossref]

A. R. A. Chalcraft, S. Lam, D. O'Brien, T. F. Krauss, M. Sahin, D. Szymanski, D. Sanvitto, R. Oulton, M. S. Skolnick, A. M. Fox, D. M. Whittaker, H. Y. Liu, and M. Hopkinson, “Mode structure of the L3 photonic crystal cavity,” Appl. Phys. Lett. 90(24), 241117 (2007).
[Crossref]

2006 (5)

L. Chen and E. Towe, “Nanowire lasers with distributed-Bragg-reflector mirrors,” Appl. Phys. Lett. 89(5), 053125 (2006).
[Crossref]

S. Strauf, K. Hennessy, M. T. Rakher, Y. S. Choi, A. Badolato, L. C. Andreani, E. L. Hu, P. M. Petroff, and D. Bouwmeester, “Self-tuned quantum dot gain in photonic crystal lasers,” Phys. Rev. Lett. 96(12), 127404 (2006).
[Crossref] [PubMed]

.-Q. Wang, Y.-Z. Huang, Q. Chen, and Z.-P. Cai, “Analysis of mode quality factors and mode reflectivities for nanowire cavity by FDTD technique,” IEEE J. Quantum Electron. 42(2), 146–151 (2006).
[Crossref]

C. J. Barrelet, J. Bao, M. Loncar, H.-G. Park, F. Capasso, and C. M. Lieber, “Hybrid single-nanowire photonic crystal and microresonator structures,” Nano Lett. 6(1), 11–15 (2006).
[Crossref] [PubMed]

A. H. Chin, S. Vaddiraju, A. V. Maslov, C. Z. Ning, M. K. Sunkara, and M. Meyyappan, “Near-infrared semiconductor subwavelength-wire lasers,” Appl. Phys. Lett. 88(16), 163115 (2006).
[Crossref]

2005 (1)

C. Sauvan, P. Lalanne, and J. P. Hugonin, “Slow-wave effect and mode-profile matching in photonic crystal microcavities,” Phys. Rev. B 71(16), 165118 (2005).
[Crossref]

2004 (3)

T. Yoshie, A. Scherer, J. Hendrickson, G. Khitrova, H. M. Gibbs, G. Rupper, C. Ell, O. B. Shchekin, and D. G. Deppe, “Vacuum Rabi splitting with a single quantum dot in a photonic crystal nanocavity,” Nature 432(7014), 200–203 (2004).
[Crossref] [PubMed]

A. V. Maslov and C. Z. Ning, “Modal properties of semiconductor nanowires for laser application,” Proc. SPIE 5349, 24–30 (2004).
[Crossref]

A. V. Maslov and C. Z. Ning, “Far-field emission of a semiconductor nanowire laser,” Opt. Lett. 29(6), 572–574 (2004).
[Crossref] [PubMed]

2003 (2)

X. Duan, Y. Huang, R. Agarwal, and C. M. Lieber, “Single-nanowire electrically driven lasers,” Nature 421(6920), 241–245 (2003).
[Crossref] [PubMed]

T. Baba and D. Sano, “Low-threshold lasing and Purcell effect in microdisk lasers at room temperature,” IEEE J. Sel. Top. Quantum Electron. 9(5), 1340–1346 (2003).
[Crossref]

2002 (3)

J. C. Johnson, H.-J. Choi, K. P. Knutsen, R. D. Schaller, P. Yang, and R. J. Saykally, “Single gallium nitride nanowire lasers,” Nat. Mater. 1(2), 106–110 (2002).
[Crossref] [PubMed]

C. Kim, W. J. Kim, A. Stapleton, J.-R. Cao, J. D. O'Brien, and P. D. Dapkus, “Quality factors in single-defect photonic-crystal lasers with asymmetric cladding layers,” J. Opt. Soc. Am. B 19(8), 1777–1781 (2002).
[Crossref]

J. Vuckovic, M. Loncar, H. Mabuchi, and A. Scherer, “Optimization of the Q factor in photonic crystal microcavities,” IEEE J. Quantum Electron. 38(7), 850–856 (2002).
[Crossref]

2001 (1)

J. C. Johnson, H. Yan, R. D. Schaller, L. H. Haber, R. J. Saykally, and P. Yang, “Single nanowire lasers,” J. Phys. Chem. B 105(46), 11387–11390 (2001).
[Crossref]

1999 (2)

M. Fujita, A. Sakai, and T. Baba, “Ultrasmall and ultralow threshold GaInAsP-InP microdisk injection lasers: design, fabrication, lasing characteristics, and spontaneous emission factor,” IEEE J. Sel. Top. Quantum Electron. 5(3), 673–681 (1999).
[Crossref]

L. C. Andreani, G. Panzarini, and J.-M. Gérard, “Strong-coupling regime for quantum boxes in pillar microcavities: Theory,” Phys. Rev. B 60(19), 13276–13279 (1999).
[Crossref]

1998 (1)

J. M. Gérard, B. Sermage, B. Gayral, B. Legrand, E. Costard, and V. Thierry-Mieg, “Enhanced spontaneous emission by quantum boxes in a monolithic optical microcavity,” Phys. Rev. Lett. 81(5), 1110–1113 (1998).
[Crossref]

1997 (1)

T. Baba, “Photonic crystals and microdisk cavities based on GaInAsP-InP system,” IEEE J. Sel. Top. Quantum Electron. 3(3), 808–830 (1997).
[Crossref]

1991 (1)

T. Baba, T. Hamano, F. Koyama, and K. Iga, “Spontaneous emission factor of a microcavity DBR surface-emitting laser,” IEEE J. Quantum Electron. 27(6), 1347–1358 (1991).
[Crossref]

Abstreiter, G.

D. Spirkoska, G. Abstreiter, and A. F. Morral, “GaAs nanowires and related prismatic heterostructures,” Semicond. Sci. Technol. 24(11), 113001 (2009).
[Crossref]

Adachi, S.

Agarwal, R.

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J. C. Johnson, H. Yan, R. D. Schaller, L. H. Haber, R. J. Saykally, and P. Yang, “Single nanowire lasers,” J. Phys. Chem. B 105(46), 11387–11390 (2001).
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Haller, E. E.

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T. Baba, T. Hamano, F. Koyama, and K. Iga, “Spontaneous emission factor of a microcavity DBR surface-emitting laser,” IEEE J. Quantum Electron. 27(6), 1347–1358 (1991).
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J. C. Johnson, H. Yan, R. D. Schaller, L. H. Haber, R. J. Saykally, and P. Yang, “Single nanowire lasers,” J. Phys. Chem. B 105(46), 11387–11390 (2001).
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Kim, Y.

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J. C. Johnson, H.-J. Choi, K. P. Knutsen, R. D. Schaller, P. Yang, and R. J. Saykally, “Single gallium nitride nanowire lasers,” Nat. Mater. 1(2), 106–110 (2002).
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B. Hua, J. Motohisa, Y. Kobayashi, S. Hara, and T. Fukui, “Single GaAs/GaAsP coaxial core-shell nanowire lasers,” Nano Lett. 9(1), 112–116 (2009).
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T. Baba, T. Hamano, F. Koyama, and K. Iga, “Spontaneous emission factor of a microcavity DBR surface-emitting laser,” IEEE J. Quantum Electron. 27(6), 1347–1358 (1991).
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Y. Xiao, C. Meng, P. Wang, Y. Ye, H. Yu, S. Wang, F. Gu, L. Dai, and L. Tong, “Single-nanowire single-mode laser,” Nano Lett. 11(3), 1122–1126 (2011).
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R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
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A. V. Maslov and C. Z. Ning, “Modal properties of semiconductor nanowires for laser application,” Proc. SPIE 5349, 24–30 (2004).
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A. V. Maslov and C. Z. Ning, “Far-field emission of a semiconductor nanowire laser,” Opt. Lett. 29(6), 572–574 (2004).
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J. C. Johnson, H.-J. Choi, K. P. Knutsen, R. D. Schaller, P. Yang, and R. J. Saykally, “Single gallium nitride nanowire lasers,” Nat. Mater. 1(2), 106–110 (2002).
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R. Chen, T.-T. D. Tran, K. W. Ng, W. S. Ko, L. C. Chuang, F. G. Sedgwick, and C. Chang-Hasnain, “Nanolasers grown on silicon,” Nat. Photonics 5(3), 170–175 (2011).
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Appl. Phys. Lett. (8)

A. H. Chin, S. Vaddiraju, A. V. Maslov, C. Z. Ning, M. K. Sunkara, and M. Meyyappan, “Near-infrared semiconductor subwavelength-wire lasers,” Appl. Phys. Lett. 88(16), 163115 (2006).
[Crossref]

H.-G. Park, F. Qian, C. J. Barrelet, and Y. Li, “Microstadium single-nanowire laser,” Appl. Phys. Lett. 91(25), 251115 (2007).
[Crossref]

J. Heo, W. Guo, and P. Bhattacharya, “Monolithic single GaN nanowire laser with photonic crystal microcavity on silicon,” Appl. Phys. Lett. 98(2), 021110 (2011).
[Crossref]

L. Chen and E. Towe, “Nanowire lasers with distributed-Bragg-reflector mirrors,” Appl. Phys. Lett. 89(5), 053125 (2006).
[Crossref]

IEEE J. Quantum Electron. (3)

J. Vuckovic, M. Loncar, H. Mabuchi, and A. Scherer, “Optimization of the Q factor in photonic crystal microcavities,” IEEE J. Quantum Electron. 38(7), 850–856 (2002).
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T. Baba, “Photonic crystals and microdisk cavities based on GaInAsP-InP system,” IEEE J. Sel. Top. Quantum Electron. 3(3), 808–830 (1997).
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Fig. 1

Effective index of the HE₁₁ and TE₀₁ propagating modes in an infinitely long GaAs nanowire with hexagonal cross section as a function of the nanowire diameter. The grayed area represents the single-mode guiding regime. The inset shows a schematic of the infinite waveguide.

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Fig. 2

Electric field intensity of resonant mode in a Fabry-Perot cavity formed by a GaAs nanowire with an InGaP substrate (a) or a 100 nm metallic layer (b) as the bottom mirrors. The nanowire length is L = 3 μm and its inner diameter D = 165 nm.

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Fig. 3

(Left) Schematic of the modified L3 photonic crystal cavity. The dashed red hexagon illustrates the position of the vertical nanowire on top of the photonic crystal slab. (Right) Electric field intensity distribution of the fundamental resonant mode of the bare L3 cavity.

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Fig. 4

Dependence of the overall quality factor Q (a), the overlap integral Γ of the cavity mode with the nanowire (b), the spontaneous emission factor β (c), and the gain at threshold g_th (d) on nanowire radius and length.

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Fig. 5

Side view of the electric field intensity (|E|²) distribution and Fourier transform of the electric field just above the photonic crystal membrane. The nanowire dimensions are r = 0.10a and L = 5a (a,d), r = 0.20a and L = 5a (b,e), r = 0.35a and L = 5a (c,f). The dashed green circles in (d-f) represent the cross section of the light cone.

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Fig. 6

Far-field radiation pattern of the bare L3 cavity (a), and the L3 cavity with a nanowire on top (c-d). The corresponding nanowire dimensions are: r = 0.10a and L = a (b), r = 0.20a and L = a (c), and r = 0.35a and L = 5a (d). The solid blue circle represents the ideal collection angle of an objective with numerical aperture of 0.4.

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Fig. 7

Far Field radiation pattern of the bare modified L3 cavity alone (a), and the modified L3 cavity with a nanowire on top (c-d). The corresponding nanowire dimensions are: r = 0.10a and L = a (b) r = 0.20a and L = a(c) and r = 0.35a and L = 5a (d). The solid blue circle represents the ideal collection angle of an objective with numerical aperture of 0.4.

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Tables (1)

Table 1 Characteristics of the nanowire-PhC structure

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Equations (5)

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β = \frac{p Γ_{r} λ^{3}}{4 π^{2} n_{e q}^{3} V_{e f f}} \frac{λ}{Δ λ}

Γ = \frac{n_{N W}^{2} V_{N W}}{n_{e q}^{2} V_{e f f}} Γ_{r}

Γ = \frac{∭_{N W} ε (\vec{r}) {| E (\vec{r}) |}^{2} d r^{3}}{∭_{T o t} ε (\vec{r}) {| E (\vec{r}) |}^{2} d r^{3}}

β = \frac{p Γ λ^{3}}{4 π^{2} n_{N W}^{2} n_{e q} V_{N W}} \frac{λ}{Δ λ}

g_{t h} = \frac{n ω_{0}}{c} \frac{1}{Γ Q}

Nanowire dimensions in the coupled structure	g_th (cm⁻¹)	β	F_p	Collection efficiency*	Beam directivity
Standard L3 PhC cavity
r = 0.10a, L = a	37x10³	0.03	2	16%	Low
r = 0.20a, L = a	30x10³	0.08	-	32%	Low
r = 0.35a, L = 5a	13x10³	0.30	-	66%	High
Optimized L3 PhC cavity
r = 0.10a, L = a	48x10³	0.03	1.5	74%	High
r = 0.20a, L = a	32x10³	0.08	-	56%	Medium
r = 0.35a, L = 5a	13x10³	0.32	-	63%	High