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S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
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[PubMed]
N.-N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides,” Opt. Express 18(1), 96–101 (2010).
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[PubMed]
L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
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[Crossref]
S. S. Mohan, M. del Mar Hershenson, S. P. Boyd, and T. H. Lee, “Bandwidth extension in CMOS with optimized on-chip inductors,” IEEE J. Solid-State Circulation 35, 346–355 (2000).
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[Crossref]
S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref]
[PubMed]
N.-N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides,” Opt. Express 18(1), 96–101 (2010).
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[Crossref]
L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref]
[PubMed]
L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref]
[PubMed]
S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref]
[PubMed]
N.-N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides,” Opt. Express 18(1), 96–101 (2010).
[Crossref]
[PubMed]
S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref]
[PubMed]
N.-N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides,” Opt. Express 18(1), 96–101 (2010).
[Crossref]
[PubMed]
S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref]
[PubMed]
K. Shinoda, S. Makino, T. Kitatani, T. Shiota, T. Fukamachi, and M. Aoki, “InGaAlAs-InGaAsP heteromaterial monolithic integration for advanced long-wavelength optoelectronic devices,” IEEE J. Quantum Electron. 45(9), 1201–1209 (2009).
[Crossref]
H. Ito, T. Furuta, S. Kodama, and T. Ishibashi, “InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth,” Electron. Lett. 36(21), 1809–1810 (2000).
[Crossref]
M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, “Performance of Ge/Si receivers at 1310 nm,” Physica E 41(6), 1076–1081 (2009).
[Crossref]
A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron 17(3), 597–608 (2011).
[Crossref]
C. Gunn, “CMOS photonics for high-speed interconnects,” IEEE Micro 26(2), 58–66 (2006).
[Crossref]
K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
[Crossref]
K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
[Crossref]
K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
[Crossref]
M. Hochberg and T. Baehr-Jones, “Towards fabless silicon photonics,” Nat. Photonics 4(8), 492–494 (2010).
[Crossref]
H. Ito, T. Furuta, S. Kodama, and T. Ishibashi, “InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth,” Electron. Lett. 36(21), 1809–1810 (2000).
[Crossref]
H. Ito, T. Furuta, S. Kodama, and T. Ishibashi, “InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth,” Electron. Lett. 36(21), 1809–1810 (2000).
[Crossref]
M. Oehme, J. Werner, E. Kasper, M. Jutzi, and M. Berroth, “High bandwidth Ge pin photodetector integrated on Si,” Appl. Phys. Lett. 89(7), 071117 (2006).
[Crossref]
M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, “Performance of Ge/Si receivers at 1310 nm,” Physica E 41(6), 1076–1081 (2009).
[Crossref]
M. Oehme, J. Werner, E. Kasper, M. Jutzi, and M. Berroth, “High bandwidth Ge pin photodetector integrated on Si,” Appl. Phys. Lett. 89(7), 071117 (2006).
[Crossref]
M. Doi, M. Sugiyama, K. Tanaka, and M. Kawai, “Advanced LiNbO3 optical modulators for broadband optical communications,” IEEE J. Sel. Top. Quantum Electron. 12(4), 745–750 (2006).
[Crossref]
K. Shinoda, S. Makino, T. Kitatani, T. Shiota, T. Fukamachi, and M. Aoki, “InGaAlAs-InGaAsP heteromaterial monolithic integration for advanced long-wavelength optoelectronic devices,” IEEE J. Quantum Electron. 45(9), 1201–1209 (2009).
[Crossref]
K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
[Crossref]
H. Ito, T. Furuta, S. Kodama, and T. Ishibashi, “InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth,” Electron. Lett. 36(21), 1809–1810 (2000).
[Crossref]
K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
[Crossref]
N.-N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides,” Opt. Express 18(1), 96–101 (2010).
[Crossref]
[PubMed]
S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref]
[PubMed]
L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref]
[PubMed]
L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref]
[PubMed]
S. S. Mohan, M. del Mar Hershenson, S. P. Boyd, and T. H. Lee, “Bandwidth extension in CMOS with optimized on-chip inductors,” IEEE J. Solid-State Circulation 35, 346–355 (2000).
N.-N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides,” Opt. Express 18(1), 96–101 (2010).
[Crossref]
[PubMed]
S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref]
[PubMed]
N.-N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides,” Opt. Express 18(1), 96–101 (2010).
[Crossref]
[PubMed]
S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref]
[PubMed]
N.-N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides,” Opt. Express 18(1), 96–101 (2010).
[Crossref]
[PubMed]
Y.-H. Wu, W.-Y. Ou, C.-C. Lin, J.-R. Wu, M.-L. Wu, and L.-L. Chen, “MIM capacitors with crystalline-stack featuring high capacitance density and low voltage coefficient,” IEEE Electron Device Lett. 33, 104–106 (2012).
[Crossref]
M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, “Performance of Ge/Si receivers at 1310 nm,” Physica E 41(6), 1076–1081 (2009).
[Crossref]
M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, “Performance of Ge/Si receivers at 1310 nm,” Physica E 41(6), 1076–1081 (2009).
[Crossref]
S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref]
[PubMed]
S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref]
[PubMed]
K. Shinoda, S. Makino, T. Kitatani, T. Shiota, T. Fukamachi, and M. Aoki, “InGaAlAs-InGaAsP heteromaterial monolithic integration for advanced long-wavelength optoelectronic devices,” IEEE J. Quantum Electron. 45(9), 1201–1209 (2009).
[Crossref]
L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref]
[PubMed]
L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
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