Abstract

Silicon has recently attracted a great deal of interest as an economical platform for integrated photonics systems. Integrated photodetectors are a key component of such systems, and CMOS-compatible processes involving epitaxially grown germanium for photodetection have been demonstrated. Detector parasitic capacitance is a key limitation, which will likely worsen if techniques such as bump bonding are employed. Here we propose leveraging the complexity available in silicon photonics processes to compensate for this using a technique known as gain peaking. We predict that by simply including an inductor and capacitor in the photodetector circuit with the properly chosen values, detector bandwidths can be as much as doubled, with no undesired effects.

© 2012 OSA

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2012 (1)

Y.-H. Wu, W.-Y. Ou, C.-C. Lin, J.-R. Wu, M.-L. Wu, and L.-L. Chen, “MIM capacitors with crystalline-stack featuring high capacitance density and low voltage coefficient,” IEEE Electron Device Lett. 33, 104–106 (2012).
[CrossRef]

2011 (3)

2010 (4)

2009 (3)

M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, “Performance of Ge/Si receivers at 1310 nm,” Physica E 41(6), 1076–1081 (2009).
[CrossRef]

K. Shinoda, S. Makino, T. Kitatani, T. Shiota, T. Fukamachi, and M. Aoki, “InGaAlAs-InGaAsP heteromaterial monolithic integration for advanced long-wavelength optoelectronic devices,” IEEE J. Quantum Electron. 45(9), 1201–1209 (2009).
[CrossRef]

L. Chen and M. Lipson, “Ultra-low capacitance and high speed germanium photodetectors on silicon,” Opt. Express 17(10), 7901–7906 (2009).
[CrossRef] [PubMed]

2008 (1)

2007 (2)

2006 (6)

R. Soref, “The past, present and future of silicon photonics,” IEEE J. Sel. Top. Quantum Electron 12(6), 1678–1687 (2006).
[CrossRef]

B. Jalali and S. Fathpour, “Silicon photonics,” J. Lightwave Technol. 24(12), 4600–4615 (2006).
[CrossRef]

S. Shekhar, J. S. Walling, and D. J. Allstot, “Bandwidth extension techniques for CMOS amplifiers,” IEEE J. Solid-St, Circulation 41, 2424–2439 (2006).

M. Doi, M. Sugiyama, K. Tanaka, and M. Kawai, “Advanced LiNbO3 optical modulators for broadband optical communications,” IEEE J. Sel. Top. Quantum Electron. 12(4), 745–750 (2006).
[CrossRef]

M. Oehme, J. Werner, E. Kasper, M. Jutzi, and M. Berroth, “High bandwidth Ge pin photodetector integrated on Si,” Appl. Phys. Lett. 89(7), 071117 (2006).
[CrossRef]

C. Gunn, “CMOS photonics for high-speed interconnects,” IEEE Micro 26(2), 58–66 (2006).
[CrossRef]

2002 (1)

K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
[CrossRef]

2000 (2)

S. S. Mohan, M. del Mar Hershenson, S. P. Boyd, and T. H. Lee, “Bandwidth extension in CMOS with optimized on-chip inductors,” IEEE J. Solid-State Circulation 35, 346–355 (2000).

H. Ito, T. Furuta, S. Kodama, and T. Ishibashi, “InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth,” Electron. Lett. 36(21), 1809–1810 (2000).
[CrossRef]

Allstot, D. J.

S. Shekhar, J. S. Walling, and D. J. Allstot, “Bandwidth extension techniques for CMOS amplifiers,” IEEE J. Solid-St, Circulation 41, 2424–2439 (2006).

Aoki, M.

K. Shinoda, S. Makino, T. Kitatani, T. Shiota, T. Fukamachi, and M. Aoki, “InGaAlAs-InGaAsP heteromaterial monolithic integration for advanced long-wavelength optoelectronic devices,” IEEE J. Quantum Electron. 45(9), 1201–1209 (2009).
[CrossRef]

Asghari, M.

Assefa, S.

Baehr-Jones, T.

M. Hochberg and T. Baehr-Jones, “Towards fabless silicon photonics,” Nat. Photonics 4(8), 492–494 (2010).
[CrossRef]

Bedell, S. W.

Berroth, M.

M. Oehme, J. Werner, E. Kasper, M. Jutzi, and M. Berroth, “High bandwidth Ge pin photodetector integrated on Si,” Appl. Phys. Lett. 89(7), 071117 (2006).
[CrossRef]

Boyd, S. P.

S. S. Mohan, M. del Mar Hershenson, S. P. Boyd, and T. H. Lee, “Bandwidth extension in CMOS with optimized on-chip inductors,” IEEE J. Solid-State Circulation 35, 346–355 (2000).

Cassan, E.

Chen, L.

Chen, L.-L.

Y.-H. Wu, W.-Y. Ou, C.-C. Lin, J.-R. Wu, M.-L. Wu, and L.-L. Chen, “MIM capacitors with crystalline-stack featuring high capacitance density and low voltage coefficient,” IEEE Electron Device Lett. 33, 104–106 (2012).
[CrossRef]

Chetrit, Y.

Cohen, R.

M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, “Performance of Ge/Si receivers at 1310 nm,” Physica E 41(6), 1076–1081 (2009).
[CrossRef]

T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007).
[CrossRef] [PubMed]

Crozat, P.

Cunningham, J. E.

Damlencourt, J.-F.

Davids, P. S.

De Dobbelaere, P.

A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron 17(3), 597–608 (2011).
[CrossRef]

del Mar Hershenson, M.

S. S. Mohan, M. del Mar Hershenson, S. P. Boyd, and T. H. Lee, “Bandwidth extension in CMOS with optimized on-chip inductors,” IEEE J. Solid-State Circulation 35, 346–355 (2000).

DeRose, C. T.

Doi, M.

M. Doi, M. Sugiyama, K. Tanaka, and M. Kawai, “Advanced LiNbO3 optical modulators for broadband optical communications,” IEEE J. Sel. Top. Quantum Electron. 12(4), 745–750 (2006).
[CrossRef]

Dong, P.

Dosunmu, O.

M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, “Performance of Ge/Si receivers at 1310 nm,” Physica E 41(6), 1076–1081 (2009).
[CrossRef]

El Melhaoui, L.

Fathpour, S.

Fédéli, J.-M.

Feng, D.

Feng, N.-N.

Fisher, M.

Fong, J.

Fukamachi, T.

K. Shinoda, S. Makino, T. Kitatani, T. Shiota, T. Fukamachi, and M. Aoki, “InGaAlAs-InGaAsP heteromaterial monolithic integration for advanced long-wavelength optoelectronic devices,” IEEE J. Quantum Electron. 45(9), 1201–1209 (2009).
[CrossRef]

Furuta, T.

H. Ito, T. Furuta, S. Kodama, and T. Ishibashi, “InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth,” Electron. Lett. 36(21), 1809–1810 (2000).
[CrossRef]

Ginsburg, E.

M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, “Performance of Ge/Si receivers at 1310 nm,” Physica E 41(6), 1076–1081 (2009).
[CrossRef]

Gloeckner, S.

A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron 17(3), 597–608 (2011).
[CrossRef]

Gunn, C.

C. Gunn, “CMOS photonics for high-speed interconnects,” IEEE Micro 26(2), 58–66 (2006).
[CrossRef]

Harada, T.

K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
[CrossRef]

Hashimoto, T.

K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
[CrossRef]

Hayami, R.

K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
[CrossRef]

Hochberg, M.

M. Hochberg and T. Baehr-Jones, “Towards fabless silicon photonics,” Nat. Photonics 4(8), 492–494 (2010).
[CrossRef]

Ishibashi, T.

H. Ito, T. Furuta, S. Kodama, and T. Ishibashi, “InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth,” Electron. Lett. 36(21), 1809–1810 (2000).
[CrossRef]

Ito, H.

H. Ito, T. Furuta, S. Kodama, and T. Ishibashi, “InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth,” Electron. Lett. 36(21), 1809–1810 (2000).
[CrossRef]

Jalali, B.

Jutzi, M.

M. Oehme, J. Werner, E. Kasper, M. Jutzi, and M. Berroth, “High bandwidth Ge pin photodetector integrated on Si,” Appl. Phys. Lett. 89(7), 071117 (2006).
[CrossRef]

Kang, Y.

M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, “Performance of Ge/Si receivers at 1310 nm,” Physica E 41(6), 1076–1081 (2009).
[CrossRef]

Kasper, E.

M. Oehme, J. Werner, E. Kasper, M. Jutzi, and M. Berroth, “High bandwidth Ge pin photodetector integrated on Si,” Appl. Phys. Lett. 89(7), 071117 (2006).
[CrossRef]

Kawai, M.

M. Doi, M. Sugiyama, K. Tanaka, and M. Kawai, “Advanced LiNbO3 optical modulators for broadband optical communications,” IEEE J. Sel. Top. Quantum Electron. 12(4), 745–750 (2006).
[CrossRef]

Kitatani, T.

K. Shinoda, S. Makino, T. Kitatani, T. Shiota, T. Fukamachi, and M. Aoki, “InGaAlAs-InGaAsP heteromaterial monolithic integration for advanced long-wavelength optoelectronic devices,” IEEE J. Quantum Electron. 45(9), 1201–1209 (2009).
[CrossRef]

Kiyota, Y.

K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
[CrossRef]

Kodama, S.

H. Ito, T. Furuta, S. Kodama, and T. Ishibashi, “InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth,” Electron. Lett. 36(21), 1809–1810 (2000).
[CrossRef]

Kondo, M.

K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
[CrossRef]

Krishnamoorthy, A. V.

Kung, C.-C.

Laval, S.

Le Roux, X.

Lee, T. H.

S. S. Mohan, M. del Mar Hershenson, S. P. Boyd, and T. H. Lee, “Bandwidth extension in CMOS with optimized on-chip inductors,” IEEE J. Solid-State Circulation 35, 346–355 (2000).

Li, G.

Liang, H.

Liao, S.

Lin, C.-C.

Y.-H. Wu, W.-Y. Ou, C.-C. Lin, J.-R. Wu, M.-L. Wu, and L.-L. Chen, “MIM capacitors with crystalline-stack featuring high capacitance density and low voltage coefficient,” IEEE Electron Device Lett. 33, 104–106 (2012).
[CrossRef]

Lipson, M.

Litski, S.

M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, “Performance of Ge/Si receivers at 1310 nm,” Physica E 41(6), 1076–1081 (2009).
[CrossRef]

Liu, H. D.

M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, “Performance of Ge/Si receivers at 1310 nm,” Physica E 41(6), 1076–1081 (2009).
[CrossRef]

Liu, Y.

Luo, Y.

Makino, S.

K. Shinoda, S. Makino, T. Kitatani, T. Shiota, T. Fukamachi, and M. Aoki, “InGaAlAs-InGaAsP heteromaterial monolithic integration for advanced long-wavelength optoelectronic devices,” IEEE J. Quantum Electron. 45(9), 1201–1209 (2009).
[CrossRef]

Mangeney, J.

Marris-Morini, D.

Masini, G.

A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron 17(3), 597–608 (2011).
[CrossRef]

Mekis, A.

A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron 17(3), 597–608 (2011).
[CrossRef]

Mohan, S. S.

S. S. Mohan, M. del Mar Hershenson, S. P. Boyd, and T. H. Lee, “Bandwidth extension in CMOS with optimized on-chip inductors,” IEEE J. Solid-State Circulation 35, 346–355 (2000).

Morse, M.

M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, “Performance of Ge/Si receivers at 1310 nm,” Physica E 41(6), 1076–1081 (2009).
[CrossRef]

Morse, M. M.

Narasimha, A.

A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron 17(3), 597–608 (2011).
[CrossRef]

Oda, K.

K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
[CrossRef]

Oehme, M.

M. Oehme, J. Werner, E. Kasper, M. Jutzi, and M. Berroth, “High bandwidth Ge pin photodetector integrated on Si,” Appl. Phys. Lett. 89(7), 071117 (2006).
[CrossRef]

Ohue, E.

K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
[CrossRef]

Orcutt, J. S.

J. S. Orcutt and R. J. Ram, “Photonic device layout within the foundry CMOS design environment,” IEEE Photon. Technol. Lett. 22(8), 544–546 (2010).
[CrossRef]

Ou, W.-Y.

Y.-H. Wu, W.-Y. Ou, C.-C. Lin, J.-R. Wu, M.-L. Wu, and L.-L. Chen, “MIM capacitors with crystalline-stack featuring high capacitance density and low voltage coefficient,” IEEE Electron Device Lett. 33, 104–106 (2012).
[CrossRef]

Paniccia, M. J.

Pascal, D.

Pinguet, T.

A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron 17(3), 597–608 (2011).
[CrossRef]

Qian, W.

Ram, R. J.

J. S. Orcutt and R. J. Ram, “Photonic device layout within the foundry CMOS design environment,” IEEE Photon. Technol. Lett. 22(8), 544–546 (2010).
[CrossRef]

Rice, P. M.

Rouvière, M.

Rubin, D.

Sahni, S.

A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron 17(3), 597–608 (2011).
[CrossRef]

Sarid, G.

M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, “Performance of Ge/Si receivers at 1310 nm,” Physica E 41(6), 1076–1081 (2009).
[CrossRef]

T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007).
[CrossRef] [PubMed]

Shafiiha, R.

Shekhar, S.

S. Shekhar, J. S. Walling, and D. J. Allstot, “Bandwidth extension techniques for CMOS amplifiers,” IEEE J. Solid-St, Circulation 41, 2424–2439 (2006).

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Shiota, T.

K. Shinoda, S. Makino, T. Kitatani, T. Shiota, T. Fukamachi, and M. Aoki, “InGaAlAs-InGaAsP heteromaterial monolithic integration for advanced long-wavelength optoelectronic devices,” IEEE J. Quantum Electron. 45(9), 1201–1209 (2009).
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M. Doi, M. Sugiyama, K. Tanaka, and M. Kawai, “Advanced LiNbO3 optical modulators for broadband optical communications,” IEEE J. Sel. Top. Quantum Electron. 12(4), 745–750 (2006).
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Tanabe, M.

K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
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K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
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Appl. Phys. Lett. (1)

M. Oehme, J. Werner, E. Kasper, M. Jutzi, and M. Berroth, “High bandwidth Ge pin photodetector integrated on Si,” Appl. Phys. Lett. 89(7), 071117 (2006).
[CrossRef]

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[CrossRef]

IEEE J. Quantum Electron. (1)

K. Shinoda, S. Makino, T. Kitatani, T. Shiota, T. Fukamachi, and M. Aoki, “InGaAlAs-InGaAsP heteromaterial monolithic integration for advanced long-wavelength optoelectronic devices,” IEEE J. Quantum Electron. 45(9), 1201–1209 (2009).
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IEEE J. Sel. Top. Quantum Electron (2)

R. Soref, “The past, present and future of silicon photonics,” IEEE J. Sel. Top. Quantum Electron 12(6), 1678–1687 (2006).
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A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron 17(3), 597–608 (2011).
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IEEE J. Sel. Top. Quantum Electron. (1)

M. Doi, M. Sugiyama, K. Tanaka, and M. Kawai, “Advanced LiNbO3 optical modulators for broadband optical communications,” IEEE J. Sel. Top. Quantum Electron. 12(4), 745–750 (2006).
[CrossRef]

IEEE J. Solid-St, Circulation (1)

S. Shekhar, J. S. Walling, and D. J. Allstot, “Bandwidth extension techniques for CMOS amplifiers,” IEEE J. Solid-St, Circulation 41, 2424–2439 (2006).

IEEE J. Solid-State Circulation (1)

S. S. Mohan, M. del Mar Hershenson, S. P. Boyd, and T. H. Lee, “Bandwidth extension in CMOS with optimized on-chip inductors,” IEEE J. Solid-State Circulation 35, 346–355 (2000).

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K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
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L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
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T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007).
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L. Chen, P. Dong, and M. Lipson, “High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding,” Opt. Express 16(15), 11513–11518 (2008).
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Physica E (1)

M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, “Performance of Ge/Si receivers at 1310 nm,” Physica E 41(6), 1076–1081 (2009).
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