Bandwidth enhancement of waveguide-coupled photodetectors with inductive gain peaking

Y.-H. Wu, W.-Y. Ou, C.-C. Lin, J.-R. Wu, M.-L. Wu, and L.-L. Chen, “MIM capacitors with crystalline-stack featuring high capacitance density and low voltage coefficient,” IEEE Electron Device Lett. 33, 104–106 (2012).
[Crossref]

S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref] [PubMed]

C. T. DeRose, D. C. Trotter, W. A. Zortman, A. L. Starbuck, M. Fisher, M. R. Watts, and P. S. Davids, “Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current,” Opt. Express 19(25), 24897–24904 (2011).
[Crossref] [PubMed]

A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron 17(3), 597–608 (2011).
[Crossref]

S. Assefa, F. Xia, S. W. Bedell, Y. Zhang, T. Topuria, P. M. Rice, and Y. A. Vlasov, “CMOS-integrated high-speed MSM germanium waveguide photodetector,” Opt. Express 18(5), 4986–4999 (2010).
[Crossref] [PubMed]

M. Hochberg and T. Baehr-Jones, “Towards fabless silicon photonics,” Nat. Photonics 4(8), 492–494 (2010).
[Crossref]

J. S. Orcutt and R. J. Ram, “Photonic device layout within the foundry CMOS design environment,” IEEE Photon. Technol. Lett. 22(8), 544–546 (2010).
[Crossref]

N.-N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides,” Opt. Express 18(1), 96–101 (2010).
[Crossref] [PubMed]

K. Shinoda, S. Makino, T. Kitatani, T. Shiota, T. Fukamachi, and M. Aoki, “InGaAlAs-InGaAsP heteromaterial monolithic integration for advanced long-wavelength optoelectronic devices,” IEEE J. Quantum Electron. 45(9), 1201–1209 (2009).
[Crossref]

M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, “Performance of Ge/Si receivers at 1310 nm,” Physica E 41(6), 1076–1081 (2009).
[Crossref]

L. Chen and M. Lipson, “Ultra-low capacitance and high speed germanium photodetectors on silicon,” Opt. Express 17(10), 7901–7906 (2009).
[Crossref] [PubMed]

L. Chen, P. Dong, and M. Lipson, “High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding,” Opt. Express 16(15), 11513–11518 (2008).
[Crossref] [PubMed]

L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref] [PubMed]

T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007).
[Crossref] [PubMed]

C. Gunn, “CMOS photonics for high-speed interconnects,” IEEE Micro 26(2), 58–66 (2006).
[Crossref]

M. Oehme, J. Werner, E. Kasper, M. Jutzi, and M. Berroth, “High bandwidth Ge pin photodetector integrated on Si,” Appl. Phys. Lett. 89(7), 071117 (2006).
[Crossref]

M. Doi, M. Sugiyama, K. Tanaka, and M. Kawai, “Advanced LiNbO3 optical modulators for broadband optical communications,” IEEE J. Sel. Top. Quantum Electron. 12(4), 745–750 (2006).
[Crossref]

B. Jalali and S. Fathpour, “Silicon photonics,” J. Lightwave Technol. 24(12), 4600–4615 (2006).
[Crossref]

R. Soref, “The past, present and future of silicon photonics,” IEEE J. Sel. Top. Quantum Electron 12(6), 1678–1687 (2006).
[Crossref]

S. Shekhar, J. S. Walling, and D. J. Allstot, “Bandwidth extension techniques for CMOS amplifiers,” IEEE J. Solid-St, Circulation 41, 2424–2439 (2006).

K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
[Crossref]

H. Ito, T. Furuta, S. Kodama, and T. Ishibashi, “InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth,” Electron. Lett. 36(21), 1809–1810 (2000).
[Crossref]

S. S. Mohan, M. del Mar Hershenson, S. P. Boyd, and T. H. Lee, “Bandwidth extension in CMOS with optimized on-chip inductors,” IEEE J. Solid-State Circulation 35, 346–355 (2000).

S. Shekhar, J. S. Walling, and D. J. Allstot, “Bandwidth extension techniques for CMOS amplifiers,” IEEE J. Solid-St, Circulation 41, 2424–2439 (2006).

K. Shinoda, S. Makino, T. Kitatani, T. Shiota, T. Fukamachi, and M. Aoki, “InGaAlAs-InGaAsP heteromaterial monolithic integration for advanced long-wavelength optoelectronic devices,” IEEE J. Quantum Electron. 45(9), 1201–1209 (2009).
[Crossref]

S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref] [PubMed]

N.-N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides,” Opt. Express 18(1), 96–101 (2010).
[Crossref] [PubMed]

S. Assefa, F. Xia, S. W. Bedell, Y. Zhang, T. Topuria, P. M. Rice, and Y. A. Vlasov, “CMOS-integrated high-speed MSM germanium waveguide photodetector,” Opt. Express 18(5), 4986–4999 (2010).
[Crossref] [PubMed]

M. Hochberg and T. Baehr-Jones, “Towards fabless silicon photonics,” Nat. Photonics 4(8), 492–494 (2010).
[Crossref]

S. Assefa, F. Xia, S. W. Bedell, Y. Zhang, T. Topuria, P. M. Rice, and Y. A. Vlasov, “CMOS-integrated high-speed MSM germanium waveguide photodetector,” Opt. Express 18(5), 4986–4999 (2010).
[Crossref] [PubMed]

M. Oehme, J. Werner, E. Kasper, M. Jutzi, and M. Berroth, “High bandwidth Ge pin photodetector integrated on Si,” Appl. Phys. Lett. 89(7), 071117 (2006).
[Crossref]

S. S. Mohan, M. del Mar Hershenson, S. P. Boyd, and T. H. Lee, “Bandwidth extension in CMOS with optimized on-chip inductors,” IEEE J. Solid-State Circulation 35, 346–355 (2000).

L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref] [PubMed]

L. Chen and M. Lipson, “Ultra-low capacitance and high speed germanium photodetectors on silicon,” Opt. Express 17(10), 7901–7906 (2009).
[Crossref] [PubMed]

L. Chen, P. Dong, and M. Lipson, “High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding,” Opt. Express 16(15), 11513–11518 (2008).
[Crossref] [PubMed]

Y.-H. Wu, W.-Y. Ou, C.-C. Lin, J.-R. Wu, M.-L. Wu, and L.-L. Chen, “MIM capacitors with crystalline-stack featuring high capacitance density and low voltage coefficient,” IEEE Electron Device Lett. 33, 104–106 (2012).
[Crossref]

T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007).
[Crossref] [PubMed]

M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, “Performance of Ge/Si receivers at 1310 nm,” Physica E 41(6), 1076–1081 (2009).
[Crossref]

T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007).
[Crossref] [PubMed]

L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref] [PubMed]

S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref] [PubMed]

N.-N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides,” Opt. Express 18(1), 96–101 (2010).
[Crossref] [PubMed]

L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref] [PubMed]

C. T. DeRose, D. C. Trotter, W. A. Zortman, A. L. Starbuck, M. Fisher, M. R. Watts, and P. S. Davids, “Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current,” Opt. Express 19(25), 24897–24904 (2011).
[Crossref] [PubMed]

A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron 17(3), 597–608 (2011).
[Crossref]

S. S. Mohan, M. del Mar Hershenson, S. P. Boyd, and T. H. Lee, “Bandwidth extension in CMOS with optimized on-chip inductors,” IEEE J. Solid-State Circulation 35, 346–355 (2000).

C. T. DeRose, D. C. Trotter, W. A. Zortman, A. L. Starbuck, M. Fisher, M. R. Watts, and P. S. Davids, “Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current,” Opt. Express 19(25), 24897–24904 (2011).
[Crossref] [PubMed]

M. Doi, M. Sugiyama, K. Tanaka, and M. Kawai, “Advanced LiNbO3 optical modulators for broadband optical communications,” IEEE J. Sel. Top. Quantum Electron. 12(4), 745–750 (2006).
[Crossref]

S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref] [PubMed]

N.-N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides,” Opt. Express 18(1), 96–101 (2010).
[Crossref] [PubMed]

L. Chen, P. Dong, and M. Lipson, “High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding,” Opt. Express 16(15), 11513–11518 (2008).
[Crossref] [PubMed]

M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, “Performance of Ge/Si receivers at 1310 nm,” Physica E 41(6), 1076–1081 (2009).
[Crossref]

L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref] [PubMed]

B. Jalali and S. Fathpour, “Silicon photonics,” J. Lightwave Technol. 24(12), 4600–4615 (2006).
[Crossref]

L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref] [PubMed]

S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref] [PubMed]

N.-N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides,” Opt. Express 18(1), 96–101 (2010).
[Crossref] [PubMed]

S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref] [PubMed]

N.-N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides,” Opt. Express 18(1), 96–101 (2010).
[Crossref] [PubMed]

C. T. DeRose, D. C. Trotter, W. A. Zortman, A. L. Starbuck, M. Fisher, M. R. Watts, and P. S. Davids, “Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current,” Opt. Express 19(25), 24897–24904 (2011).
[Crossref] [PubMed]

S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref] [PubMed]

K. Shinoda, S. Makino, T. Kitatani, T. Shiota, T. Fukamachi, and M. Aoki, “InGaAlAs-InGaAsP heteromaterial monolithic integration for advanced long-wavelength optoelectronic devices,” IEEE J. Quantum Electron. 45(9), 1201–1209 (2009).
[Crossref]

H. Ito, T. Furuta, S. Kodama, and T. Ishibashi, “InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth,” Electron. Lett. 36(21), 1809–1810 (2000).
[Crossref]

M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, “Performance of Ge/Si receivers at 1310 nm,” Physica E 41(6), 1076–1081 (2009).
[Crossref]

A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron 17(3), 597–608 (2011).
[Crossref]

C. Gunn, “CMOS photonics for high-speed interconnects,” IEEE Micro 26(2), 58–66 (2006).
[Crossref]

K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
[Crossref]

K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
[Crossref]

K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
[Crossref]

M. Hochberg and T. Baehr-Jones, “Towards fabless silicon photonics,” Nat. Photonics 4(8), 492–494 (2010).
[Crossref]

H. Ito, T. Furuta, S. Kodama, and T. Ishibashi, “InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth,” Electron. Lett. 36(21), 1809–1810 (2000).
[Crossref]

H. Ito, T. Furuta, S. Kodama, and T. Ishibashi, “InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth,” Electron. Lett. 36(21), 1809–1810 (2000).
[Crossref]

B. Jalali and S. Fathpour, “Silicon photonics,” J. Lightwave Technol. 24(12), 4600–4615 (2006).
[Crossref]

M. Oehme, J. Werner, E. Kasper, M. Jutzi, and M. Berroth, “High bandwidth Ge pin photodetector integrated on Si,” Appl. Phys. Lett. 89(7), 071117 (2006).
[Crossref]

M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, “Performance of Ge/Si receivers at 1310 nm,” Physica E 41(6), 1076–1081 (2009).
[Crossref]

M. Oehme, J. Werner, E. Kasper, M. Jutzi, and M. Berroth, “High bandwidth Ge pin photodetector integrated on Si,” Appl. Phys. Lett. 89(7), 071117 (2006).
[Crossref]

M. Doi, M. Sugiyama, K. Tanaka, and M. Kawai, “Advanced LiNbO3 optical modulators for broadband optical communications,” IEEE J. Sel. Top. Quantum Electron. 12(4), 745–750 (2006).
[Crossref]

K. Shinoda, S. Makino, T. Kitatani, T. Shiota, T. Fukamachi, and M. Aoki, “InGaAlAs-InGaAsP heteromaterial monolithic integration for advanced long-wavelength optoelectronic devices,” IEEE J. Quantum Electron. 45(9), 1201–1209 (2009).
[Crossref]

K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
[Crossref]

H. Ito, T. Furuta, S. Kodama, and T. Ishibashi, “InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth,” Electron. Lett. 36(21), 1809–1810 (2000).
[Crossref]

K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
[Crossref]

N.-N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides,” Opt. Express 18(1), 96–101 (2010).
[Crossref] [PubMed]

S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref] [PubMed]

L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref] [PubMed]

L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref] [PubMed]

S. S. Mohan, M. del Mar Hershenson, S. P. Boyd, and T. H. Lee, “Bandwidth extension in CMOS with optimized on-chip inductors,” IEEE J. Solid-State Circulation 35, 346–355 (2000).

N.-N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides,” Opt. Express 18(1), 96–101 (2010).
[Crossref] [PubMed]

S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref] [PubMed]

N.-N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides,” Opt. Express 18(1), 96–101 (2010).
[Crossref] [PubMed]

S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref] [PubMed]

N.-N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides,” Opt. Express 18(1), 96–101 (2010).
[Crossref] [PubMed]

Y.-H. Wu, W.-Y. Ou, C.-C. Lin, J.-R. Wu, M.-L. Wu, and L.-L. Chen, “MIM capacitors with crystalline-stack featuring high capacitance density and low voltage coefficient,” IEEE Electron Device Lett. 33, 104–106 (2012).
[Crossref]

L. Chen and M. Lipson, “Ultra-low capacitance and high speed germanium photodetectors on silicon,” Opt. Express 17(10), 7901–7906 (2009).
[Crossref] [PubMed]

L. Chen, P. Dong, and M. Lipson, “High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding,” Opt. Express 16(15), 11513–11518 (2008).
[Crossref] [PubMed]

M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, “Performance of Ge/Si receivers at 1310 nm,” Physica E 41(6), 1076–1081 (2009).
[Crossref]

M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, “Performance of Ge/Si receivers at 1310 nm,” Physica E 41(6), 1076–1081 (2009).
[Crossref]

S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref] [PubMed]

S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref] [PubMed]

K. Shinoda, S. Makino, T. Kitatani, T. Shiota, T. Fukamachi, and M. Aoki, “InGaAlAs-InGaAsP heteromaterial monolithic integration for advanced long-wavelength optoelectronic devices,” IEEE J. Quantum Electron. 45(9), 1201–1209 (2009).
[Crossref]

L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref] [PubMed]

L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref] [PubMed]

A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron 17(3), 597–608 (2011).
[Crossref]

A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron 17(3), 597–608 (2011).
[Crossref]

S. S. Mohan, M. del Mar Hershenson, S. P. Boyd, and T. H. Lee, “Bandwidth extension in CMOS with optimized on-chip inductors,” IEEE J. Solid-State Circulation 35, 346–355 (2000).

M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, “Performance of Ge/Si receivers at 1310 nm,” Physica E 41(6), 1076–1081 (2009).
[Crossref]

T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007).
[Crossref] [PubMed]

A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron 17(3), 597–608 (2011).
[Crossref]

K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
[Crossref]

M. Oehme, J. Werner, E. Kasper, M. Jutzi, and M. Berroth, “High bandwidth Ge pin photodetector integrated on Si,” Appl. Phys. Lett. 89(7), 071117 (2006).
[Crossref]

K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
[Crossref]

J. S. Orcutt and R. J. Ram, “Photonic device layout within the foundry CMOS design environment,” IEEE Photon. Technol. Lett. 22(8), 544–546 (2010).
[Crossref]

Y.-H. Wu, W.-Y. Ou, C.-C. Lin, J.-R. Wu, M.-L. Wu, and L.-L. Chen, “MIM capacitors with crystalline-stack featuring high capacitance density and low voltage coefficient,” IEEE Electron Device Lett. 33, 104–106 (2012).
[Crossref]

T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007).
[Crossref] [PubMed]

L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref] [PubMed]

A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron 17(3), 597–608 (2011).
[Crossref]

S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref] [PubMed]

J. S. Orcutt and R. J. Ram, “Photonic device layout within the foundry CMOS design environment,” IEEE Photon. Technol. Lett. 22(8), 544–546 (2010).
[Crossref]

S. Assefa, F. Xia, S. W. Bedell, Y. Zhang, T. Topuria, P. M. Rice, and Y. A. Vlasov, “CMOS-integrated high-speed MSM germanium waveguide photodetector,” Opt. Express 18(5), 4986–4999 (2010).
[Crossref] [PubMed]

L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref] [PubMed]

T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007).
[Crossref] [PubMed]

A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron 17(3), 597–608 (2011).
[Crossref]

M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, “Performance of Ge/Si receivers at 1310 nm,” Physica E 41(6), 1076–1081 (2009).
[Crossref]

T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007).
[Crossref] [PubMed]

S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref] [PubMed]

N.-N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides,” Opt. Express 18(1), 96–101 (2010).
[Crossref] [PubMed]

S. Shekhar, J. S. Walling, and D. J. Allstot, “Bandwidth extension techniques for CMOS amplifiers,” IEEE J. Solid-St, Circulation 41, 2424–2439 (2006).

K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
[Crossref]

K. Shinoda, S. Makino, T. Kitatani, T. Shiota, T. Fukamachi, and M. Aoki, “InGaAlAs-InGaAsP heteromaterial monolithic integration for advanced long-wavelength optoelectronic devices,” IEEE J. Quantum Electron. 45(9), 1201–1209 (2009).
[Crossref]

K. Shinoda, S. Makino, T. Kitatani, T. Shiota, T. Fukamachi, and M. Aoki, “InGaAlAs-InGaAsP heteromaterial monolithic integration for advanced long-wavelength optoelectronic devices,” IEEE J. Quantum Electron. 45(9), 1201–1209 (2009).
[Crossref]

R. Soref, “The past, present and future of silicon photonics,” IEEE J. Sel. Top. Quantum Electron 12(6), 1678–1687 (2006).
[Crossref]

C. T. DeRose, D. C. Trotter, W. A. Zortman, A. L. Starbuck, M. Fisher, M. R. Watts, and P. S. Davids, “Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current,” Opt. Express 19(25), 24897–24904 (2011).
[Crossref] [PubMed]

M. Doi, M. Sugiyama, K. Tanaka, and M. Kawai, “Advanced LiNbO3 optical modulators for broadband optical communications,” IEEE J. Sel. Top. Quantum Electron. 12(4), 745–750 (2006).
[Crossref]

K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
[Crossref]

M. Doi, M. Sugiyama, K. Tanaka, and M. Kawai, “Advanced LiNbO3 optical modulators for broadband optical communications,” IEEE J. Sel. Top. Quantum Electron. 12(4), 745–750 (2006).
[Crossref]

S. Assefa, F. Xia, S. W. Bedell, Y. Zhang, T. Topuria, P. M. Rice, and Y. A. Vlasov, “CMOS-integrated high-speed MSM germanium waveguide photodetector,” Opt. Express 18(5), 4986–4999 (2010).
[Crossref] [PubMed]

C. T. DeRose, D. C. Trotter, W. A. Zortman, A. L. Starbuck, M. Fisher, M. R. Watts, and P. S. Davids, “Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current,” Opt. Express 19(25), 24897–24904 (2011).
[Crossref] [PubMed]

L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref] [PubMed]

S. Assefa, F. Xia, S. W. Bedell, Y. Zhang, T. Topuria, P. M. Rice, and Y. A. Vlasov, “CMOS-integrated high-speed MSM germanium waveguide photodetector,” Opt. Express 18(5), 4986–4999 (2010).
[Crossref] [PubMed]

S. Shekhar, J. S. Walling, and D. J. Allstot, “Bandwidth extension techniques for CMOS amplifiers,” IEEE J. Solid-St, Circulation 41, 2424–2439 (2006).

K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
[Crossref]

C. T. DeRose, D. C. Trotter, W. A. Zortman, A. L. Starbuck, M. Fisher, M. R. Watts, and P. S. Davids, “Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current,” Opt. Express 19(25), 24897–24904 (2011).
[Crossref] [PubMed]

M. Oehme, J. Werner, E. Kasper, M. Jutzi, and M. Berroth, “High bandwidth Ge pin photodetector integrated on Si,” Appl. Phys. Lett. 89(7), 071117 (2006).
[Crossref]

Y.-H. Wu, W.-Y. Ou, C.-C. Lin, J.-R. Wu, M.-L. Wu, and L.-L. Chen, “MIM capacitors with crystalline-stack featuring high capacitance density and low voltage coefficient,” IEEE Electron Device Lett. 33, 104–106 (2012).
[Crossref]

Y.-H. Wu, W.-Y. Ou, C.-C. Lin, J.-R. Wu, M.-L. Wu, and L.-L. Chen, “MIM capacitors with crystalline-stack featuring high capacitance density and low voltage coefficient,” IEEE Electron Device Lett. 33, 104–106 (2012).
[Crossref]

Y.-H. Wu, W.-Y. Ou, C.-C. Lin, J.-R. Wu, M.-L. Wu, and L.-L. Chen, “MIM capacitors with crystalline-stack featuring high capacitance density and low voltage coefficient,” IEEE Electron Device Lett. 33, 104–106 (2012).
[Crossref]

S. Assefa, F. Xia, S. W. Bedell, Y. Zhang, T. Topuria, P. M. Rice, and Y. A. Vlasov, “CMOS-integrated high-speed MSM germanium waveguide photodetector,” Opt. Express 18(5), 4986–4999 (2010).
[Crossref] [PubMed]

M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, “Performance of Ge/Si receivers at 1310 nm,” Physica E 41(6), 1076–1081 (2009).
[Crossref]

T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007).
[Crossref] [PubMed]

M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, “Performance of Ge/Si receivers at 1310 nm,” Physica E 41(6), 1076–1081 (2009).
[Crossref]

S. Assefa, F. Xia, S. W. Bedell, Y. Zhang, T. Topuria, P. M. Rice, and Y. A. Vlasov, “CMOS-integrated high-speed MSM germanium waveguide photodetector,” Opt. Express 18(5), 4986–4999 (2010).
[Crossref] [PubMed]

N.-N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides,” Opt. Express 18(1), 96–101 (2010).
[Crossref] [PubMed]

C. T. DeRose, D. C. Trotter, W. A. Zortman, A. L. Starbuck, M. Fisher, M. R. Watts, and P. S. Davids, “Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current,” Opt. Express 19(25), 24897–24904 (2011).
[Crossref] [PubMed]

M. Oehme, J. Werner, E. Kasper, M. Jutzi, and M. Berroth, “High bandwidth Ge pin photodetector integrated on Si,” Appl. Phys. Lett. 89(7), 071117 (2006).
[Crossref]

H. Ito, T. Furuta, S. Kodama, and T. Ishibashi, “InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth,” Electron. Lett. 36(21), 1809–1810 (2000).
[Crossref]

Y.-H. Wu, W.-Y. Ou, C.-C. Lin, J.-R. Wu, M.-L. Wu, and L.-L. Chen, “MIM capacitors with crystalline-stack featuring high capacitance density and low voltage coefficient,” IEEE Electron Device Lett. 33, 104–106 (2012).
[Crossref]

K. Shinoda, S. Makino, T. Kitatani, T. Shiota, T. Fukamachi, and M. Aoki, “InGaAlAs-InGaAsP heteromaterial monolithic integration for advanced long-wavelength optoelectronic devices,” IEEE J. Quantum Electron. 45(9), 1201–1209 (2009).
[Crossref]

R. Soref, “The past, present and future of silicon photonics,” IEEE J. Sel. Top. Quantum Electron 12(6), 1678–1687 (2006).
[Crossref]

A. Mekis, S. Gloeckner, G. Masini, A. Narasimha, T. Pinguet, S. Sahni, and P. De Dobbelaere, “A grating-coupler-enabled CMOS photonics platform,” IEEE J. Sel. Top. Quantum Electron 17(3), 597–608 (2011).
[Crossref]

M. Doi, M. Sugiyama, K. Tanaka, and M. Kawai, “Advanced LiNbO3 optical modulators for broadband optical communications,” IEEE J. Sel. Top. Quantum Electron. 12(4), 745–750 (2006).
[Crossref]

S. Shekhar, J. S. Walling, and D. J. Allstot, “Bandwidth extension techniques for CMOS amplifiers,” IEEE J. Solid-St, Circulation 41, 2424–2439 (2006).

S. S. Mohan, M. del Mar Hershenson, S. P. Boyd, and T. H. Lee, “Bandwidth extension in CMOS with optimized on-chip inductors,” IEEE J. Solid-State Circulation 35, 346–355 (2000).

C. Gunn, “CMOS photonics for high-speed interconnects,” IEEE Micro 26(2), 58–66 (2006).
[Crossref]

J. S. Orcutt and R. J. Ram, “Photonic device layout within the foundry CMOS design environment,” IEEE Photon. Technol. Lett. 22(8), 544–546 (2010).
[Crossref]

K. Washio, E. Ohue, H. Shimamoto, K. Oda, R. Hayami, Y. Kiyota, M. Tanabe, M. Kondo, T. Hashimoto, and T. Harada, “A 0.2-μm 180-GHz-fmax 6.7-ps-ECL SOI/HRS self-aligned SEG SiGe HBT/CMOS technology for microwave and high-speed digital applications,” IEEE Trans. Electron. Dev. 49(2), 271–278 (2002).
[Crossref]

B. Jalali and S. Fathpour, “Silicon photonics,” J. Lightwave Technol. 24(12), 4600–4615 (2006).
[Crossref]

M. Hochberg and T. Baehr-Jones, “Towards fabless silicon photonics,” Nat. Photonics 4(8), 492–494 (2010).
[Crossref]

C. T. DeRose, D. C. Trotter, W. A. Zortman, A. L. Starbuck, M. Fisher, M. R. Watts, and P. S. Davids, “Ultra compact 45 GHz CMOS compatible Germanium waveguide photodiode with low dark current,” Opt. Express 19(25), 24897–24904 (2011).
[Crossref] [PubMed]

N.-N. Feng, P. Dong, D. Zheng, S. Liao, H. Liang, R. Shafiiha, D. Feng, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “Vertical p-i-n germanium photodetector with high external responsivity integrated with large core Si waveguides,” Opt. Express 18(1), 96–101 (2010).
[Crossref] [PubMed]

S. Liao, N.-N. Feng, D. Feng, P. Dong, R. Shafiiha, C.-C. Kung, H. Liang, W. Qian, Y. Liu, J. Fong, J. E. Cunningham, Y. Luo, and M. Asghari, “36 GHz submicron silicon waveguide germanium photodetector,” Opt. Express 19(11), 10967–10972 (2011).
[Crossref] [PubMed]

T. Yin, R. Cohen, M. M. Morse, G. Sarid, Y. Chetrit, D. Rubin, and M. J. Paniccia, “31 GHz Ge n-i-p waveguide photodetectors on Silicon-on-Insulator substrate,” Opt. Express 15(21), 13965–13971 (2007).
[Crossref] [PubMed]

L. Chen, P. Dong, and M. Lipson, “High performance germanium photodetectors integrated on submicron silicon waveguides by low temperature wafer bonding,” Opt. Express 16(15), 11513–11518 (2008).
[Crossref] [PubMed]

S. Assefa, F. Xia, S. W. Bedell, Y. Zhang, T. Topuria, P. M. Rice, and Y. A. Vlasov, “CMOS-integrated high-speed MSM germanium waveguide photodetector,” Opt. Express 18(5), 4986–4999 (2010).
[Crossref] [PubMed]

L. Vivien, M. Rouvière, J.-M. Fédéli, D. Marris-Morini, J.-F. Damlencourt, J. Mangeney, P. Crozat, L. El Melhaoui, E. Cassan, X. Le Roux, D. Pascal, and S. Laval, “High speed and high responsivity germanium photodetector integrated in a Silicon-On-Insulator microwaveguide,” Opt. Express 15(15), 9843–9848 (2007).
[Crossref] [PubMed]

L. Chen and M. Lipson, “Ultra-low capacitance and high speed germanium photodetectors on silicon,” Opt. Express 17(10), 7901–7906 (2009).
[Crossref] [PubMed]

M. Morse, O. Dosunmu, T. Yin, Y. Kang, H. D. Liu, G. Sarid, E. Ginsburg, R. Cohen, S. Litski, and M. Zadka, “Performance of Ge/Si receivers at 1310 nm,” Physica E 41(6), 1076–1081 (2009).
[Crossref]

E. D. Palik,.Handbook of Optical Constants of Solids (Elsevier 1998) pp. 471–478.

H. D. Thacker, Y. Luo, J. Shi, I. Shubin, J. Lexau, X. Zheng, G. Li, J. Yao, J. Costa, T. Pinguet, A. Mekis, P. Dong, S. Liao, D. Feng, M. Asghari, R. Ho, K. Raj, J. G. Mitchell, A. V. Krishnamoorthy, and J. E. Cunningham, “Flip-chip integrated silicon photonic bridge chips for sub-picojoule per bit optical links,” IEEE Electronic Components and Technology Conference, 240–246 (2010).

B. Razavi Microelectronics, (Prentice-Hall, 1998).

W. S. C. Chang, RF Photonic Technology in Optical Links (Cambridge University Press, 2002).