Abstract

We report a multiple laser stealth dicing (multi-LSD) method to improve the light extraction efficiency (LEE) of InGaN-based light-emitting diodes (LEDs) using a picosecond (Ps) laser. Compared with conventional LEDs scribed by a nanosecond (Ns) laser and single stealth-diced LEDs, the light output power (LOP) of the LEDs using multi-LSD method can be improved by 26.5% and 11.2%, respectively. The enhanced LOP is due to the increased side emission from the large-area roughened sidewalls of the sapphire substrates fabricated in the multi-LSD process. Numerical simulation results show that the multi-LSD process has little thermal damages to the multiple quantum wells (MQWs) of the LEDs.

© 2012 OSA

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  1. T. H. Hsueh, J. K. Sheu, H. W. Huang, J. Y. Chu, C. C. Kao, H. C. Kuo, and S. C. Wang, “Enhancement in light output of InGaN-based microhole array light-emitting diodes,” IEEE Photon. Technol. Lett. 17(6), 1163–1165 (2005).
    [CrossRef]
  2. J. B. Kim, S. M. Kim, Y. W. Kim, S. K. Kang, S. R. Jeon, N. Hwang, Y. J. Choi, and C. S. Chung, “Light extraction enhancement of GaN-based light-emitting diodes using volcano-shaped patterned sapphire substrates,” Jpn. J. Appl. Phys. 49(4), 042102 (2010).
    [CrossRef]
  3. C. H. Chan, C. H. Hou, S. Z. Tseng, T. J. Chen, H. T. Chien, F. L. Hsiao, C. C. Lee, Y. L. Tsai, and C. C. Chen, “Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate,” Appl. Phys. Lett. 95(1), 011110 (2009).
    [CrossRef]
  4. T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
    [CrossRef]
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    [CrossRef]
  9. J. H. Lee, S. M. Hwang, N. S. Kim, and J. H. Lee, “InGaN-based high-power flip-chip LEDs with deep-hole-patterned sapphire substrate by laser direct beam drilling,” IEEE Electron Device Lett. 31(7), 698–700 (2010).
    [CrossRef]
  10. X. H. Wang, P. T. Lai, and H. W. Choi, “Laser micromachining of optical microstructures with inclined sidewall profile,” J. Vac. Sci. Technol. B 27(3), 1048–1052 (2009).
    [CrossRef]
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    [CrossRef] [PubMed]
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    [CrossRef]
  13. W. Y. Fu, K. N. Hui, X. H. Wang, K. K. Y. Wong, P. T. Lai, and H. W. Choi, “Geometrical shaping of InGaN light-emitting diodes by laser micromachining,” IEEE Photon. Technol. Lett. 21(15), 1078–1080 (2009).
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    [CrossRef]

2011 (2)

2010 (5)

J. H. Lee, N. S. Kim, S. S. Hong, and J. H. Lee, “Enhanced extraction efficiency of InGaN-based light-emitting diodes using 100-kHz femtosecond-laser-scribing technology,” IEEE Electron Device Lett. 31(3), 213–215 (2010).
[CrossRef]

X. H. Wang, P. T. Lai, and H. W. Choi, “The contribution of sidewall light extraction to efficiencies of polygonal light-emitting diodes shaped with laser micromachining,” J. Appl. Phys. 108(2), 023110 (2010).
[CrossRef]

J. B. Kim, S. M. Kim, Y. W. Kim, S. K. Kang, S. R. Jeon, N. Hwang, Y. J. Choi, and C. S. Chung, “Light extraction enhancement of GaN-based light-emitting diodes using volcano-shaped patterned sapphire substrates,” Jpn. J. Appl. Phys. 49(4), 042102 (2010).
[CrossRef]

W. C. Lee, S. J. Wang, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, and P. H. Wang, “Enhanced light output of GaN-based vertical-structured light-emitting diodes with two-step surface roughening using KrF laser and chemical wet etching,” IEEE Photon. Technol. Lett. 22(17), 1318–1320 (2010).
[CrossRef]

J. H. Lee, S. M. Hwang, N. S. Kim, and J. H. Lee, “InGaN-based high-power flip-chip LEDs with deep-hole-patterned sapphire substrate by laser direct beam drilling,” IEEE Electron Device Lett. 31(7), 698–700 (2010).
[CrossRef]

2009 (5)

X. H. Wang, P. T. Lai, and H. W. Choi, “Laser micromachining of optical microstructures with inclined sidewall profile,” J. Vac. Sci. Technol. B 27(3), 1048–1052 (2009).
[CrossRef]

X. H. Wang, W. Y. Fu, P. T. Lai, and H. W. Choi, “Evaluation of InGaN/GaN light-emitting diodes of circular geometry,” Opt. Express 17(25), 22311–22319 (2009).
[CrossRef] [PubMed]

C. H. Chan, C. H. Hou, S. Z. Tseng, T. J. Chen, H. T. Chien, F. L. Hsiao, C. C. Lee, Y. L. Tsai, and C. C. Chen, “Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate,” Appl. Phys. Lett. 95(1), 011110 (2009).
[CrossRef]

J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009).
[CrossRef]

W. Y. Fu, K. N. Hui, X. H. Wang, K. K. Y. Wong, P. T. Lai, and H. W. Choi, “Geometrical shaping of InGaN light-emitting diodes by laser micromachining,” IEEE Photon. Technol. Lett. 21(15), 1078–1080 (2009).
[CrossRef]

2008 (1)

2005 (1)

T. H. Hsueh, J. K. Sheu, H. W. Huang, J. Y. Chu, C. C. Kao, H. C. Kuo, and S. C. Wang, “Enhancement in light output of InGaN-based microhole array light-emitting diodes,” IEEE Photon. Technol. Lett. 17(6), 1163–1165 (2005).
[CrossRef]

2004 (1)

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
[CrossRef]

Chan, C. H.

C. H. Chan, C. H. Hou, S. Z. Tseng, T. J. Chen, H. T. Chien, F. L. Hsiao, C. C. Lee, Y. L. Tsai, and C. C. Chen, “Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate,” Appl. Phys. Lett. 95(1), 011110 (2009).
[CrossRef]

Chao, C.-H.

Chen, C. C.

C. H. Chan, C. H. Hou, S. Z. Tseng, T. J. Chen, H. T. Chien, F. L. Hsiao, C. C. Lee, Y. L. Tsai, and C. C. Chen, “Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate,” Appl. Phys. Lett. 95(1), 011110 (2009).
[CrossRef]

Chen, K. C.

Chen, T. J.

C. H. Chan, C. H. Hou, S. Z. Tseng, T. J. Chen, H. T. Chien, F. L. Hsiao, C. C. Lee, Y. L. Tsai, and C. C. Chen, “Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate,” Appl. Phys. Lett. 95(1), 011110 (2009).
[CrossRef]

Chen, T. M.

W. C. Lee, S. J. Wang, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, and P. H. Wang, “Enhanced light output of GaN-based vertical-structured light-emitting diodes with two-step surface roughening using KrF laser and chemical wet etching,” IEEE Photon. Technol. Lett. 22(17), 1318–1320 (2010).
[CrossRef]

Chi, J.-Y.

Chien, H. T.

C. H. Chan, C. H. Hou, S. Z. Tseng, T. J. Chen, H. T. Chien, F. L. Hsiao, C. C. Lee, Y. L. Tsai, and C. C. Chen, “Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate,” Appl. Phys. Lett. 95(1), 011110 (2009).
[CrossRef]

Choi, H. W.

X. H. Wang, P. T. Lai, and H. W. Choi, “The contribution of sidewall light extraction to efficiencies of polygonal light-emitting diodes shaped with laser micromachining,” J. Appl. Phys. 108(2), 023110 (2010).
[CrossRef]

X. H. Wang, P. T. Lai, and H. W. Choi, “Laser micromachining of optical microstructures with inclined sidewall profile,” J. Vac. Sci. Technol. B 27(3), 1048–1052 (2009).
[CrossRef]

W. Y. Fu, K. N. Hui, X. H. Wang, K. K. Y. Wong, P. T. Lai, and H. W. Choi, “Geometrical shaping of InGaN light-emitting diodes by laser micromachining,” IEEE Photon. Technol. Lett. 21(15), 1078–1080 (2009).
[CrossRef]

X. H. Wang, W. Y. Fu, P. T. Lai, and H. W. Choi, “Evaluation of InGaN/GaN light-emitting diodes of circular geometry,” Opt. Express 17(25), 22311–22319 (2009).
[CrossRef] [PubMed]

Choi, Y. J.

J. B. Kim, S. M. Kim, Y. W. Kim, S. K. Kang, S. R. Jeon, N. Hwang, Y. J. Choi, and C. S. Chung, “Light extraction enhancement of GaN-based light-emitting diodes using volcano-shaped patterned sapphire substrates,” Jpn. J. Appl. Phys. 49(4), 042102 (2010).
[CrossRef]

Chu, J. Y.

T. H. Hsueh, J. K. Sheu, H. W. Huang, J. Y. Chu, C. C. Kao, H. C. Kuo, and S. C. Wang, “Enhancement in light output of InGaN-based microhole array light-emitting diodes,” IEEE Photon. Technol. Lett. 17(6), 1163–1165 (2005).
[CrossRef]

Chung, C. S.

J. B. Kim, S. M. Kim, Y. W. Kim, S. K. Kang, S. R. Jeon, N. Hwang, Y. J. Choi, and C. S. Chung, “Light extraction enhancement of GaN-based light-emitting diodes using volcano-shaped patterned sapphire substrates,” Jpn. J. Appl. Phys. 49(4), 042102 (2010).
[CrossRef]

David, A.

J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009).
[CrossRef]

DenBaars, S. P.

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
[CrossRef]

Fu, W. Y.

W. Y. Fu, K. N. Hui, X. H. Wang, K. K. Y. Wong, P. T. Lai, and H. W. Choi, “Geometrical shaping of InGaN light-emitting diodes by laser micromachining,” IEEE Photon. Technol. Lett. 21(15), 1078–1080 (2009).
[CrossRef]

X. H. Wang, W. Y. Fu, P. T. Lai, and H. W. Choi, “Evaluation of InGaN/GaN light-emitting diodes of circular geometry,” Opt. Express 17(25), 22311–22319 (2009).
[CrossRef] [PubMed]

Fujii, T.

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
[CrossRef]

Gao, Y.

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
[CrossRef]

Hong, S. S.

J. H. Lee, N. S. Kim, S. S. Hong, and J. H. Lee, “Enhanced extraction efficiency of InGaN-based light-emitting diodes using 100-kHz femtosecond-laser-scribing technology,” IEEE Electron Device Lett. 31(3), 213–215 (2010).
[CrossRef]

Hou, C. H.

C. H. Chan, C. H. Hou, S. Z. Tseng, T. J. Chen, H. T. Chien, F. L. Hsiao, C. C. Lee, Y. L. Tsai, and C. C. Chen, “Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate,” Appl. Phys. Lett. 95(1), 011110 (2009).
[CrossRef]

Hsiao, F. L.

C. H. Chan, C. H. Hou, S. Z. Tseng, T. J. Chen, H. T. Chien, F. L. Hsiao, C. C. Lee, Y. L. Tsai, and C. C. Chen, “Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate,” Appl. Phys. Lett. 95(1), 011110 (2009).
[CrossRef]

Hsu, H. C.

Hsueh, H.-T.

Hsueh, T. H.

T. H. Hsueh, J. K. Sheu, H. W. Huang, J. Y. Chu, C. C. Kao, H. C. Kuo, and S. C. Wang, “Enhancement in light output of InGaN-based microhole array light-emitting diodes,” IEEE Photon. Technol. Lett. 17(6), 1163–1165 (2005).
[CrossRef]

Hu, E. L.

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
[CrossRef]

Huang, H. W.

T. H. Hsueh, J. K. Sheu, H. W. Huang, J. Y. Chu, C. C. Kao, H. C. Kuo, and S. C. Wang, “Enhancement in light output of InGaN-based microhole array light-emitting diodes,” IEEE Photon. Technol. Lett. 17(6), 1163–1165 (2005).
[CrossRef]

Hui, K. N.

W. Y. Fu, K. N. Hui, X. H. Wang, K. K. Y. Wong, P. T. Lai, and H. W. Choi, “Geometrical shaping of InGaN light-emitting diodes by laser micromachining,” IEEE Photon. Technol. Lett. 21(15), 1078–1080 (2009).
[CrossRef]

Hwang, N.

J. B. Kim, S. M. Kim, Y. W. Kim, S. K. Kang, S. R. Jeon, N. Hwang, Y. J. Choi, and C. S. Chung, “Light extraction enhancement of GaN-based light-emitting diodes using volcano-shaped patterned sapphire substrates,” Jpn. J. Appl. Phys. 49(4), 042102 (2010).
[CrossRef]

Hwang, S. M.

J. H. Lee, S. M. Hwang, N. S. Kim, and J. H. Lee, “InGaN-based high-power flip-chip LEDs with deep-hole-patterned sapphire substrate by laser direct beam drilling,” IEEE Electron Device Lett. 31(7), 698–700 (2010).
[CrossRef]

Jeon, S. R.

J. B. Kim, S. M. Kim, Y. W. Kim, S. K. Kang, S. R. Jeon, N. Hwang, Y. J. Choi, and C. S. Chung, “Light extraction enhancement of GaN-based light-emitting diodes using volcano-shaped patterned sapphire substrates,” Jpn. J. Appl. Phys. 49(4), 042102 (2010).
[CrossRef]

Kang, S. K.

J. B. Kim, S. M. Kim, Y. W. Kim, S. K. Kang, S. R. Jeon, N. Hwang, Y. J. Choi, and C. S. Chung, “Light extraction enhancement of GaN-based light-emitting diodes using volcano-shaped patterned sapphire substrates,” Jpn. J. Appl. Phys. 49(4), 042102 (2010).
[CrossRef]

Kao, C. C.

T. H. Hsueh, J. K. Sheu, H. W. Huang, J. Y. Chu, C. C. Kao, H. C. Kuo, and S. C. Wang, “Enhancement in light output of InGaN-based microhole array light-emitting diodes,” IEEE Photon. Technol. Lett. 17(6), 1163–1165 (2005).
[CrossRef]

Kim, J. B.

J. B. Kim, S. M. Kim, Y. W. Kim, S. K. Kang, S. R. Jeon, N. Hwang, Y. J. Choi, and C. S. Chung, “Light extraction enhancement of GaN-based light-emitting diodes using volcano-shaped patterned sapphire substrates,” Jpn. J. Appl. Phys. 49(4), 042102 (2010).
[CrossRef]

Kim, N. S.

J. H. Lee, S. M. Hwang, N. S. Kim, and J. H. Lee, “InGaN-based high-power flip-chip LEDs with deep-hole-patterned sapphire substrate by laser direct beam drilling,” IEEE Electron Device Lett. 31(7), 698–700 (2010).
[CrossRef]

J. H. Lee, N. S. Kim, S. S. Hong, and J. H. Lee, “Enhanced extraction efficiency of InGaN-based light-emitting diodes using 100-kHz femtosecond-laser-scribing technology,” IEEE Electron Device Lett. 31(3), 213–215 (2010).
[CrossRef]

Kim, S. M.

J. B. Kim, S. M. Kim, Y. W. Kim, S. K. Kang, S. R. Jeon, N. Hwang, Y. J. Choi, and C. S. Chung, “Light extraction enhancement of GaN-based light-emitting diodes using volcano-shaped patterned sapphire substrates,” Jpn. J. Appl. Phys. 49(4), 042102 (2010).
[CrossRef]

Kim, Y. W.

J. B. Kim, S. M. Kim, Y. W. Kim, S. K. Kang, S. R. Jeon, N. Hwang, Y. J. Choi, and C. S. Chung, “Light extraction enhancement of GaN-based light-emitting diodes using volcano-shaped patterned sapphire substrates,” Jpn. J. Appl. Phys. 49(4), 042102 (2010).
[CrossRef]

Kong, Q. F.

Kuo, D. M.

W. C. Lee, S. J. Wang, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, and P. H. Wang, “Enhanced light output of GaN-based vertical-structured light-emitting diodes with two-step surface roughening using KrF laser and chemical wet etching,” IEEE Photon. Technol. Lett. 22(17), 1318–1320 (2010).
[CrossRef]

Kuo, H. C.

T. H. Hsueh, J. K. Sheu, H. W. Huang, J. Y. Chu, C. C. Kao, H. C. Kuo, and S. C. Wang, “Enhancement in light output of InGaN-based microhole array light-emitting diodes,” IEEE Photon. Technol. Lett. 17(6), 1163–1165 (2005).
[CrossRef]

Kuo, H.-C.

Lai, C.-F.

Lai, P. T.

X. H. Wang, P. T. Lai, and H. W. Choi, “The contribution of sidewall light extraction to efficiencies of polygonal light-emitting diodes shaped with laser micromachining,” J. Appl. Phys. 108(2), 023110 (2010).
[CrossRef]

X. H. Wang, P. T. Lai, and H. W. Choi, “Laser micromachining of optical microstructures with inclined sidewall profile,” J. Vac. Sci. Technol. B 27(3), 1048–1052 (2009).
[CrossRef]

X. H. Wang, W. Y. Fu, P. T. Lai, and H. W. Choi, “Evaluation of InGaN/GaN light-emitting diodes of circular geometry,” Opt. Express 17(25), 22311–22319 (2009).
[CrossRef] [PubMed]

W. Y. Fu, K. N. Hui, X. H. Wang, K. K. Y. Wong, P. T. Lai, and H. W. Choi, “Geometrical shaping of InGaN light-emitting diodes by laser micromachining,” IEEE Photon. Technol. Lett. 21(15), 1078–1080 (2009).
[CrossRef]

Lee, C. C.

C. H. Chan, C. H. Hou, S. Z. Tseng, T. J. Chen, H. T. Chien, F. L. Hsiao, C. C. Lee, Y. L. Tsai, and C. C. Chen, “Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate,” Appl. Phys. Lett. 95(1), 011110 (2009).
[CrossRef]

Lee, J. H.

J. H. Lee, N. S. Kim, S. S. Hong, and J. H. Lee, “Enhanced extraction efficiency of InGaN-based light-emitting diodes using 100-kHz femtosecond-laser-scribing technology,” IEEE Electron Device Lett. 31(3), 213–215 (2010).
[CrossRef]

J. H. Lee, N. S. Kim, S. S. Hong, and J. H. Lee, “Enhanced extraction efficiency of InGaN-based light-emitting diodes using 100-kHz femtosecond-laser-scribing technology,” IEEE Electron Device Lett. 31(3), 213–215 (2010).
[CrossRef]

J. H. Lee, S. M. Hwang, N. S. Kim, and J. H. Lee, “InGaN-based high-power flip-chip LEDs with deep-hole-patterned sapphire substrate by laser direct beam drilling,” IEEE Electron Device Lett. 31(7), 698–700 (2010).
[CrossRef]

J. H. Lee, S. M. Hwang, N. S. Kim, and J. H. Lee, “InGaN-based high-power flip-chip LEDs with deep-hole-patterned sapphire substrate by laser direct beam drilling,” IEEE Electron Device Lett. 31(7), 698–700 (2010).
[CrossRef]

Lee, W. C.

W. C. Lee, S. J. Wang, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, and P. H. Wang, “Enhanced light output of GaN-based vertical-structured light-emitting diodes with two-step surface roughening using KrF laser and chemical wet etching,” IEEE Photon. Technol. Lett. 22(17), 1318–1320 (2010).
[CrossRef]

Li, J.

Li, J. M.

Liao, Y. X.

Lin, C.-L.

Megens, M. M.

J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009).
[CrossRef]

Nakamura, S.

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
[CrossRef]

Sharma, R.

T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
[CrossRef]

Sheu, J. K.

T. H. Hsueh, J. K. Sheu, H. W. Huang, J. Y. Chu, C. C. Kao, H. C. Kuo, and S. C. Wang, “Enhancement in light output of InGaN-based microhole array light-emitting diodes,” IEEE Photon. Technol. Lett. 17(6), 1163–1165 (2005).
[CrossRef]

Su, Y. K.

Tsai, Y. L.

C. H. Chan, C. H. Hou, S. Z. Tseng, T. J. Chen, H. T. Chien, F. L. Hsiao, C. C. Lee, Y. L. Tsai, and C. C. Chen, “Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate,” Appl. Phys. Lett. 95(1), 011110 (2009).
[CrossRef]

Tseng, S. Z.

C. H. Chan, C. H. Hou, S. Z. Tseng, T. J. Chen, H. T. Chien, F. L. Hsiao, C. C. Lee, Y. L. Tsai, and C. C. Chen, “Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate,” Appl. Phys. Lett. 95(1), 011110 (2009).
[CrossRef]

Uang, K. M.

W. C. Lee, S. J. Wang, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, and P. H. Wang, “Enhanced light output of GaN-based vertical-structured light-emitting diodes with two-step surface roughening using KrF laser and chemical wet etching,” IEEE Photon. Technol. Lett. 22(17), 1318–1320 (2010).
[CrossRef]

Wang, G. H.

Wang, J. X.

Wang, J.-F. T.

Wang, P. H.

W. C. Lee, S. J. Wang, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, and P. H. Wang, “Enhanced light output of GaN-based vertical-structured light-emitting diodes with two-step surface roughening using KrF laser and chemical wet etching,” IEEE Photon. Technol. Lett. 22(17), 1318–1320 (2010).
[CrossRef]

Wang, P. R.

W. C. Lee, S. J. Wang, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, and P. H. Wang, “Enhanced light output of GaN-based vertical-structured light-emitting diodes with two-step surface roughening using KrF laser and chemical wet etching,” IEEE Photon. Technol. Lett. 22(17), 1318–1320 (2010).
[CrossRef]

Wang, S. C.

T. H. Hsueh, J. K. Sheu, H. W. Huang, J. Y. Chu, C. C. Kao, H. C. Kuo, and S. C. Wang, “Enhancement in light output of InGaN-based microhole array light-emitting diodes,” IEEE Photon. Technol. Lett. 17(6), 1163–1165 (2005).
[CrossRef]

Wang, S. J.

W. C. Lee, S. J. Wang, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, and P. H. Wang, “Enhanced light output of GaN-based vertical-structured light-emitting diodes with two-step surface roughening using KrF laser and chemical wet etching,” IEEE Photon. Technol. Lett. 22(17), 1318–1320 (2010).
[CrossRef]

Wang, X. H.

X. H. Wang, P. T. Lai, and H. W. Choi, “The contribution of sidewall light extraction to efficiencies of polygonal light-emitting diodes shaped with laser micromachining,” J. Appl. Phys. 108(2), 023110 (2010).
[CrossRef]

W. Y. Fu, K. N. Hui, X. H. Wang, K. K. Y. Wong, P. T. Lai, and H. W. Choi, “Geometrical shaping of InGaN light-emitting diodes by laser micromachining,” IEEE Photon. Technol. Lett. 21(15), 1078–1080 (2009).
[CrossRef]

X. H. Wang, P. T. Lai, and H. W. Choi, “Laser micromachining of optical microstructures with inclined sidewall profile,” J. Vac. Sci. Technol. B 27(3), 1048–1052 (2009).
[CrossRef]

X. H. Wang, W. Y. Fu, P. T. Lai, and H. W. Choi, “Evaluation of InGaN/GaN light-emitting diodes of circular geometry,” Opt. Express 17(25), 22311–22319 (2009).
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Wierer, J. J.

J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009).
[CrossRef]

Wong, K. K. Y.

W. Y. Fu, K. N. Hui, X. H. Wang, K. K. Y. Wong, P. T. Lai, and H. W. Choi, “Geometrical shaping of InGaN light-emitting diodes by laser micromachining,” IEEE Photon. Technol. Lett. 21(15), 1078–1080 (2009).
[CrossRef]

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Yi, F. T.

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Appl. Phys. Lett. (2)

C. H. Chan, C. H. Hou, S. Z. Tseng, T. J. Chen, H. T. Chien, F. L. Hsiao, C. C. Lee, Y. L. Tsai, and C. C. Chen, “Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate,” Appl. Phys. Lett. 95(1), 011110 (2009).
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T. Fujii, Y. Gao, R. Sharma, E. L. Hu, S. P. DenBaars, and S. Nakamura, “Increase in extraction efficiency of GaN-based light-emitting diodes via surface roughening,” Appl. Phys. Lett. 84(6), 855–857 (2004).
[CrossRef]

IEEE Electron Device Lett. (2)

J. H. Lee, S. M. Hwang, N. S. Kim, and J. H. Lee, “InGaN-based high-power flip-chip LEDs with deep-hole-patterned sapphire substrate by laser direct beam drilling,” IEEE Electron Device Lett. 31(7), 698–700 (2010).
[CrossRef]

J. H. Lee, N. S. Kim, S. S. Hong, and J. H. Lee, “Enhanced extraction efficiency of InGaN-based light-emitting diodes using 100-kHz femtosecond-laser-scribing technology,” IEEE Electron Device Lett. 31(3), 213–215 (2010).
[CrossRef]

IEEE Photon. Technol. Lett. (3)

W. C. Lee, S. J. Wang, K. M. Uang, T. M. Chen, D. M. Kuo, P. R. Wang, and P. H. Wang, “Enhanced light output of GaN-based vertical-structured light-emitting diodes with two-step surface roughening using KrF laser and chemical wet etching,” IEEE Photon. Technol. Lett. 22(17), 1318–1320 (2010).
[CrossRef]

W. Y. Fu, K. N. Hui, X. H. Wang, K. K. Y. Wong, P. T. Lai, and H. W. Choi, “Geometrical shaping of InGaN light-emitting diodes by laser micromachining,” IEEE Photon. Technol. Lett. 21(15), 1078–1080 (2009).
[CrossRef]

T. H. Hsueh, J. K. Sheu, H. W. Huang, J. Y. Chu, C. C. Kao, H. C. Kuo, and S. C. Wang, “Enhancement in light output of InGaN-based microhole array light-emitting diodes,” IEEE Photon. Technol. Lett. 17(6), 1163–1165 (2005).
[CrossRef]

J. Appl. Phys. (1)

X. H. Wang, P. T. Lai, and H. W. Choi, “The contribution of sidewall light extraction to efficiencies of polygonal light-emitting diodes shaped with laser micromachining,” J. Appl. Phys. 108(2), 023110 (2010).
[CrossRef]

J. Lightwave Technol. (1)

J. Vac. Sci. Technol. B (1)

X. H. Wang, P. T. Lai, and H. W. Choi, “Laser micromachining of optical microstructures with inclined sidewall profile,” J. Vac. Sci. Technol. B 27(3), 1048–1052 (2009).
[CrossRef]

Jpn. J. Appl. Phys. (1)

J. B. Kim, S. M. Kim, Y. W. Kim, S. K. Kang, S. R. Jeon, N. Hwang, Y. J. Choi, and C. S. Chung, “Light extraction enhancement of GaN-based light-emitting diodes using volcano-shaped patterned sapphire substrates,” Jpn. J. Appl. Phys. 49(4), 042102 (2010).
[CrossRef]

Nat. Photonics (1)

J. J. Wierer, A. David, and M. M. Megens, “III-nitride photonic-crystal light-emitting diodes with high extraction efficiency,” Nat. Photonics 3(3), 163–169 (2009).
[CrossRef]

Opt. Express (3)

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Figures (6)

Fig. 1
Fig. 1

SEM images of the LEDs with different sapphire sidewalls scribed by Ns/Ps pulse lasers.

Fig. 2
Fig. 2

Close view of the surface morphology of a single laser-scribing layer on the sidewall of the sapphire substrates using multi-LSD method: (a) SEM images, (b) AFM images of the surface morphology, and (c) height and width of the laser-scribing marks.

Fig. 3
Fig. 3

(a) LOP-I-V curves of the LEDs with different laser-scribing surfaces, (b) reverse current-voltage curves of the LEDs with different laser-scribing surfaces, (c) LOP of the LEDs with different laser-scribing surfaces at an injection current of 20 mA, and (d) LOP of the Single-LSD-LED samples with different positions of the roughened layer.

Fig. 4
Fig. 4

Corresponding luminescence pictures of the LEDs with different laser-scribing surfaces as shown in Fig. 1 (a)-(f).

Fig. 5
Fig. 5

Far-field radiation patterns of the multi-LSD LED, the single-LSD LED, and the Ns laser-scribed LED.

Fig. 6
Fig. 6

(a) Simulation conditions and the two-dimensional (2D) structure of the multi-LSD LED in the simulations, (b) time variation of the simulated temperature of the InGaN MQWs, and (c) the simulated 2D temperature distributions at 40 ps, 80 ps, 1.65 ns, 13.5ns, and 37.0 ns.

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