Abstract

2.7 times increase in room temperature photoluminescence (PL) intensity and 3.2 times increase in electroluminescence (EL) intensity were observed in blue multi-quantum-well (MQW) GaN/InGaN light emitting diodes (LEDs) as a result of introduction of nano-needle structure embedded with Ag nanoparticles (NPs) into n-GaN film underlying the active MQW region and thick p-GaN contact layer of LEDs. The nano-needle structure was produced by photoelectrochemical etching. Simultaneously a measurable decrease in room temperature decay time from 2.2 ns in control samples to 1.6 ns in PL was observed. The results are explained by strong coupling of recombination in GaN/InGaN MQWs with Ag NPs related localized surface plasmons.

© 2012 OSA

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater. 3(9), 601–605 (2004).
    [CrossRef] [PubMed]
  2. M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.) 20(7), 1253–1257 (2008).
    [CrossRef]
  3. D. M. Yeh, C. Y. Chen, Y. C. Lu, C. F. Huang, and C. C. Yang, “Formation of various metal nanostructures with thermal annealing to control the effective coupling energy between a surface plasmon and an InGaN/GaN quantum well,” Nanotechnology 18(26), 265402 (2007).
    [CrossRef] [PubMed]
  4. T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E. K. Suh, “Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster,” Appl. Phys. Lett. 95(11), 111112 (2009).
    [CrossRef]
  5. L. W. Jang, J. W. Ju, J. W. Jeon, D. W. Jeon, J. H. Choi, S. J. Lee, S. R. Jeon, J. H. Baek, E. Sari, H. V. Demir, H. D. Yoon, S. M. Hwang, and I. H. Lee, “Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures,” Proc. SPIE 7945, 794511 (2011).
    [CrossRef]
  6. C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett. 98(5), 051106 (2011).
    [CrossRef]
  7. C. Y. Cho, M. K. Kwon, S. J. Lee, S. H. Han, J. W. Kang, S. E. Kang, D. Y. Lee, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN,” Nanotechnology 21(20), 205201 (2010).
    [CrossRef] [PubMed]
  8. C. Y. Cho, K. S. Kim, S. J. Lee, M. K. Kwon, H. D. Ko, S. T. Kim, G. Y. Jung, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks embedded in p-GaN,” Appl. Phys. Lett. 99(4), 041107 (2011).
    [CrossRef]
  9. C. Youtsey, L. T. Romano, R. J. Molnar, and I. Adesida, “Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching,” Appl. Phys. Lett. 74(23), 3537–3539 (1999).
    [CrossRef]
  10. I. Han, R. Datta, S. Mahajan, R. Bertram, E. Lindow, C. Werkhoven, and C. Arena, “Characterization of threading dislocations in GaN using low-temperature aqueous KOH etching and atomic force microscopy,” Scr. Mater. 59(11), 1171–1173 (2008).
    [CrossRef]
  11. C. F. Lin, C.-C. Yang, C.-M. Lin, K.-T. Chen, C.-W. Hu, and J.-D. Tsay, “InGaN-based light-emitting diodes with a multiple air gap layer,” Electrochem. Solid-State Lett. 12(10), H365–H368 (2009).
    [CrossRef]
  12. T. Izumi, Y. Narukawa, K. Okamoto, Y. Kawakami, S. Fujita, and S. Nakamura, “Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution,” J. Lumin. 87-89, 1196–1198 (2000).
    [CrossRef]
  13. M. S. Minsky, S. Watanabe, and N. Yamada, “Radiative and nonradiative lifetimes in GaInN/GaN multiquantum wells,” J. Appl. Phys. 91(8), 5176–5181 (2002).
    [CrossRef]
  14. F. Yun, Y. Fu, Y. T. Moon, U. Ozgur, J. Q. Xie, S. Dogan, H. Morkoc, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith, “Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templates,” Phys. Status Solidi., A Appl. Mater. Sci. 202(5), 749–753 (2005).
    [CrossRef]

2011 (3)

L. W. Jang, J. W. Ju, J. W. Jeon, D. W. Jeon, J. H. Choi, S. J. Lee, S. R. Jeon, J. H. Baek, E. Sari, H. V. Demir, H. D. Yoon, S. M. Hwang, and I. H. Lee, “Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures,” Proc. SPIE 7945, 794511 (2011).
[CrossRef]

C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett. 98(5), 051106 (2011).
[CrossRef]

C. Y. Cho, K. S. Kim, S. J. Lee, M. K. Kwon, H. D. Ko, S. T. Kim, G. Y. Jung, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks embedded in p-GaN,” Appl. Phys. Lett. 99(4), 041107 (2011).
[CrossRef]

2010 (1)

C. Y. Cho, M. K. Kwon, S. J. Lee, S. H. Han, J. W. Kang, S. E. Kang, D. Y. Lee, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN,” Nanotechnology 21(20), 205201 (2010).
[CrossRef] [PubMed]

2009 (2)

T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E. K. Suh, “Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster,” Appl. Phys. Lett. 95(11), 111112 (2009).
[CrossRef]

C. F. Lin, C.-C. Yang, C.-M. Lin, K.-T. Chen, C.-W. Hu, and J.-D. Tsay, “InGaN-based light-emitting diodes with a multiple air gap layer,” Electrochem. Solid-State Lett. 12(10), H365–H368 (2009).
[CrossRef]

2008 (2)

I. Han, R. Datta, S. Mahajan, R. Bertram, E. Lindow, C. Werkhoven, and C. Arena, “Characterization of threading dislocations in GaN using low-temperature aqueous KOH etching and atomic force microscopy,” Scr. Mater. 59(11), 1171–1173 (2008).
[CrossRef]

M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.) 20(7), 1253–1257 (2008).
[CrossRef]

2007 (1)

D. M. Yeh, C. Y. Chen, Y. C. Lu, C. F. Huang, and C. C. Yang, “Formation of various metal nanostructures with thermal annealing to control the effective coupling energy between a surface plasmon and an InGaN/GaN quantum well,” Nanotechnology 18(26), 265402 (2007).
[CrossRef] [PubMed]

2005 (1)

F. Yun, Y. Fu, Y. T. Moon, U. Ozgur, J. Q. Xie, S. Dogan, H. Morkoc, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith, “Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templates,” Phys. Status Solidi., A Appl. Mater. Sci. 202(5), 749–753 (2005).
[CrossRef]

2004 (1)

K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater. 3(9), 601–605 (2004).
[CrossRef] [PubMed]

2002 (1)

M. S. Minsky, S. Watanabe, and N. Yamada, “Radiative and nonradiative lifetimes in GaInN/GaN multiquantum wells,” J. Appl. Phys. 91(8), 5176–5181 (2002).
[CrossRef]

2000 (1)

T. Izumi, Y. Narukawa, K. Okamoto, Y. Kawakami, S. Fujita, and S. Nakamura, “Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution,” J. Lumin. 87-89, 1196–1198 (2000).
[CrossRef]

1999 (1)

C. Youtsey, L. T. Romano, R. J. Molnar, and I. Adesida, “Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching,” Appl. Phys. Lett. 74(23), 3537–3539 (1999).
[CrossRef]

Adesida, I.

C. Youtsey, L. T. Romano, R. J. Molnar, and I. Adesida, “Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching,” Appl. Phys. Lett. 74(23), 3537–3539 (1999).
[CrossRef]

Arena, C.

I. Han, R. Datta, S. Mahajan, R. Bertram, E. Lindow, C. Werkhoven, and C. Arena, “Characterization of threading dislocations in GaN using low-temperature aqueous KOH etching and atomic force microscopy,” Scr. Mater. 59(11), 1171–1173 (2008).
[CrossRef]

Baek, J. H.

L. W. Jang, J. W. Ju, J. W. Jeon, D. W. Jeon, J. H. Choi, S. J. Lee, S. R. Jeon, J. H. Baek, E. Sari, H. V. Demir, H. D. Yoon, S. M. Hwang, and I. H. Lee, “Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures,” Proc. SPIE 7945, 794511 (2011).
[CrossRef]

Bertram, R.

I. Han, R. Datta, S. Mahajan, R. Bertram, E. Lindow, C. Werkhoven, and C. Arena, “Characterization of threading dislocations in GaN using low-temperature aqueous KOH etching and atomic force microscopy,” Scr. Mater. 59(11), 1171–1173 (2008).
[CrossRef]

Byeon, C. C.

M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.) 20(7), 1253–1257 (2008).
[CrossRef]

Chen, C. Y.

D. M. Yeh, C. Y. Chen, Y. C. Lu, C. F. Huang, and C. C. Yang, “Formation of various metal nanostructures with thermal annealing to control the effective coupling energy between a surface plasmon and an InGaN/GaN quantum well,” Nanotechnology 18(26), 265402 (2007).
[CrossRef] [PubMed]

Chen, K.-T.

C. F. Lin, C.-C. Yang, C.-M. Lin, K.-T. Chen, C.-W. Hu, and J.-D. Tsay, “InGaN-based light-emitting diodes with a multiple air gap layer,” Electrochem. Solid-State Lett. 12(10), H365–H368 (2009).
[CrossRef]

Cho, C. Y.

C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett. 98(5), 051106 (2011).
[CrossRef]

C. Y. Cho, K. S. Kim, S. J. Lee, M. K. Kwon, H. D. Ko, S. T. Kim, G. Y. Jung, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks embedded in p-GaN,” Appl. Phys. Lett. 99(4), 041107 (2011).
[CrossRef]

C. Y. Cho, M. K. Kwon, S. J. Lee, S. H. Han, J. W. Kang, S. E. Kang, D. Y. Lee, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN,” Nanotechnology 21(20), 205201 (2010).
[CrossRef] [PubMed]

M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.) 20(7), 1253–1257 (2008).
[CrossRef]

Cho, Y. H.

C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett. 98(5), 051106 (2011).
[CrossRef]

Choi, J. H.

L. W. Jang, J. W. Ju, J. W. Jeon, D. W. Jeon, J. H. Choi, S. J. Lee, S. R. Jeon, J. H. Baek, E. Sari, H. V. Demir, H. D. Yoon, S. M. Hwang, and I. H. Lee, “Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures,” Proc. SPIE 7945, 794511 (2011).
[CrossRef]

Datta, R.

I. Han, R. Datta, S. Mahajan, R. Bertram, E. Lindow, C. Werkhoven, and C. Arena, “Characterization of threading dislocations in GaN using low-temperature aqueous KOH etching and atomic force microscopy,” Scr. Mater. 59(11), 1171–1173 (2008).
[CrossRef]

Demir, H. V.

L. W. Jang, J. W. Ju, J. W. Jeon, D. W. Jeon, J. H. Choi, S. J. Lee, S. R. Jeon, J. H. Baek, E. Sari, H. V. Demir, H. D. Yoon, S. M. Hwang, and I. H. Lee, “Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures,” Proc. SPIE 7945, 794511 (2011).
[CrossRef]

Dogan, S.

F. Yun, Y. Fu, Y. T. Moon, U. Ozgur, J. Q. Xie, S. Dogan, H. Morkoc, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith, “Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templates,” Phys. Status Solidi., A Appl. Mater. Sci. 202(5), 749–753 (2005).
[CrossRef]

Fu, Y.

F. Yun, Y. Fu, Y. T. Moon, U. Ozgur, J. Q. Xie, S. Dogan, H. Morkoc, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith, “Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templates,” Phys. Status Solidi., A Appl. Mater. Sci. 202(5), 749–753 (2005).
[CrossRef]

Fujita, S.

T. Izumi, Y. Narukawa, K. Okamoto, Y. Kawakami, S. Fujita, and S. Nakamura, “Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution,” J. Lumin. 87-89, 1196–1198 (2000).
[CrossRef]

Han, I.

I. Han, R. Datta, S. Mahajan, R. Bertram, E. Lindow, C. Werkhoven, and C. Arena, “Characterization of threading dislocations in GaN using low-temperature aqueous KOH etching and atomic force microscopy,” Scr. Mater. 59(11), 1171–1173 (2008).
[CrossRef]

Han, S. H.

C. Y. Cho, M. K. Kwon, S. J. Lee, S. H. Han, J. W. Kang, S. E. Kang, D. Y. Lee, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN,” Nanotechnology 21(20), 205201 (2010).
[CrossRef] [PubMed]

Hong, S. H.

C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett. 98(5), 051106 (2011).
[CrossRef]

Hu, C.-W.

C. F. Lin, C.-C. Yang, C.-M. Lin, K.-T. Chen, C.-W. Hu, and J.-D. Tsay, “InGaN-based light-emitting diodes with a multiple air gap layer,” Electrochem. Solid-State Lett. 12(10), H365–H368 (2009).
[CrossRef]

Huang, C. F.

D. M. Yeh, C. Y. Chen, Y. C. Lu, C. F. Huang, and C. C. Yang, “Formation of various metal nanostructures with thermal annealing to control the effective coupling energy between a surface plasmon and an InGaN/GaN quantum well,” Nanotechnology 18(26), 265402 (2007).
[CrossRef] [PubMed]

Hwang, S. M.

L. W. Jang, J. W. Ju, J. W. Jeon, D. W. Jeon, J. H. Choi, S. J. Lee, S. R. Jeon, J. H. Baek, E. Sari, H. V. Demir, H. D. Yoon, S. M. Hwang, and I. H. Lee, “Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures,” Proc. SPIE 7945, 794511 (2011).
[CrossRef]

Inoki, C. K.

F. Yun, Y. Fu, Y. T. Moon, U. Ozgur, J. Q. Xie, S. Dogan, H. Morkoc, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith, “Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templates,” Phys. Status Solidi., A Appl. Mater. Sci. 202(5), 749–753 (2005).
[CrossRef]

Izumi, T.

T. Izumi, Y. Narukawa, K. Okamoto, Y. Kawakami, S. Fujita, and S. Nakamura, “Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution,” J. Lumin. 87-89, 1196–1198 (2000).
[CrossRef]

Jang, L. W.

L. W. Jang, J. W. Ju, J. W. Jeon, D. W. Jeon, J. H. Choi, S. J. Lee, S. R. Jeon, J. H. Baek, E. Sari, H. V. Demir, H. D. Yoon, S. M. Hwang, and I. H. Lee, “Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures,” Proc. SPIE 7945, 794511 (2011).
[CrossRef]

Jeon, D. W.

L. W. Jang, J. W. Ju, J. W. Jeon, D. W. Jeon, J. H. Choi, S. J. Lee, S. R. Jeon, J. H. Baek, E. Sari, H. V. Demir, H. D. Yoon, S. M. Hwang, and I. H. Lee, “Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures,” Proc. SPIE 7945, 794511 (2011).
[CrossRef]

Jeon, J. W.

L. W. Jang, J. W. Ju, J. W. Jeon, D. W. Jeon, J. H. Choi, S. J. Lee, S. R. Jeon, J. H. Baek, E. Sari, H. V. Demir, H. D. Yoon, S. M. Hwang, and I. H. Lee, “Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures,” Proc. SPIE 7945, 794511 (2011).
[CrossRef]

Jeon, S. R.

L. W. Jang, J. W. Ju, J. W. Jeon, D. W. Jeon, J. H. Choi, S. J. Lee, S. R. Jeon, J. H. Baek, E. Sari, H. V. Demir, H. D. Yoon, S. M. Hwang, and I. H. Lee, “Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures,” Proc. SPIE 7945, 794511 (2011).
[CrossRef]

Jeong, H.

T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E. K. Suh, “Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster,” Appl. Phys. Lett. 95(11), 111112 (2009).
[CrossRef]

Ju, J. W.

L. W. Jang, J. W. Ju, J. W. Jeon, D. W. Jeon, J. H. Choi, S. J. Lee, S. R. Jeon, J. H. Baek, E. Sari, H. V. Demir, H. D. Yoon, S. M. Hwang, and I. H. Lee, “Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures,” Proc. SPIE 7945, 794511 (2011).
[CrossRef]

Jung, G. Y.

C. Y. Cho, K. S. Kim, S. J. Lee, M. K. Kwon, H. D. Ko, S. T. Kim, G. Y. Jung, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks embedded in p-GaN,” Appl. Phys. Lett. 99(4), 041107 (2011).
[CrossRef]

Kang, J. W.

C. Y. Cho, M. K. Kwon, S. J. Lee, S. H. Han, J. W. Kang, S. E. Kang, D. Y. Lee, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN,” Nanotechnology 21(20), 205201 (2010).
[CrossRef] [PubMed]

Kang, S. E.

C. Y. Cho, M. K. Kwon, S. J. Lee, S. H. Han, J. W. Kang, S. E. Kang, D. Y. Lee, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN,” Nanotechnology 21(20), 205201 (2010).
[CrossRef] [PubMed]

Kawakami, Y.

T. Izumi, Y. Narukawa, K. Okamoto, Y. Kawakami, S. Fujita, and S. Nakamura, “Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution,” J. Lumin. 87-89, 1196–1198 (2000).
[CrossRef]

Kim, B. H.

M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.) 20(7), 1253–1257 (2008).
[CrossRef]

Kim, H.

T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E. K. Suh, “Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster,” Appl. Phys. Lett. 95(11), 111112 (2009).
[CrossRef]

Kim, J. D.

T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E. K. Suh, “Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster,” Appl. Phys. Lett. 95(11), 111112 (2009).
[CrossRef]

Kim, J. Y.

M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.) 20(7), 1253–1257 (2008).
[CrossRef]

Kim, K. S.

C. Y. Cho, K. S. Kim, S. J. Lee, M. K. Kwon, H. D. Ko, S. T. Kim, G. Y. Jung, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks embedded in p-GaN,” Appl. Phys. Lett. 99(4), 041107 (2011).
[CrossRef]

Kim, S. T.

C. Y. Cho, K. S. Kim, S. J. Lee, M. K. Kwon, H. D. Ko, S. T. Kim, G. Y. Jung, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks embedded in p-GaN,” Appl. Phys. Lett. 99(4), 041107 (2011).
[CrossRef]

Ko, H. D.

C. Y. Cho, K. S. Kim, S. J. Lee, M. K. Kwon, H. D. Ko, S. T. Kim, G. Y. Jung, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks embedded in p-GaN,” Appl. Phys. Lett. 99(4), 041107 (2011).
[CrossRef]

Kuan, T. S.

F. Yun, Y. Fu, Y. T. Moon, U. Ozgur, J. Q. Xie, S. Dogan, H. Morkoc, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith, “Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templates,” Phys. Status Solidi., A Appl. Mater. Sci. 202(5), 749–753 (2005).
[CrossRef]

Kwon, M. K.

C. Y. Cho, K. S. Kim, S. J. Lee, M. K. Kwon, H. D. Ko, S. T. Kim, G. Y. Jung, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks embedded in p-GaN,” Appl. Phys. Lett. 99(4), 041107 (2011).
[CrossRef]

C. Y. Cho, M. K. Kwon, S. J. Lee, S. H. Han, J. W. Kang, S. E. Kang, D. Y. Lee, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN,” Nanotechnology 21(20), 205201 (2010).
[CrossRef] [PubMed]

M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.) 20(7), 1253–1257 (2008).
[CrossRef]

Lee, D. Y.

C. Y. Cho, M. K. Kwon, S. J. Lee, S. H. Han, J. W. Kang, S. E. Kang, D. Y. Lee, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN,” Nanotechnology 21(20), 205201 (2010).
[CrossRef] [PubMed]

Lee, I. H.

L. W. Jang, J. W. Ju, J. W. Jeon, D. W. Jeon, J. H. Choi, S. J. Lee, S. R. Jeon, J. H. Baek, E. Sari, H. V. Demir, H. D. Yoon, S. M. Hwang, and I. H. Lee, “Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures,” Proc. SPIE 7945, 794511 (2011).
[CrossRef]

Lee, K. J.

T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E. K. Suh, “Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster,” Appl. Phys. Lett. 95(11), 111112 (2009).
[CrossRef]

Lee, S. J.

L. W. Jang, J. W. Ju, J. W. Jeon, D. W. Jeon, J. H. Choi, S. J. Lee, S. R. Jeon, J. H. Baek, E. Sari, H. V. Demir, H. D. Yoon, S. M. Hwang, and I. H. Lee, “Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures,” Proc. SPIE 7945, 794511 (2011).
[CrossRef]

C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett. 98(5), 051106 (2011).
[CrossRef]

C. Y. Cho, K. S. Kim, S. J. Lee, M. K. Kwon, H. D. Ko, S. T. Kim, G. Y. Jung, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks embedded in p-GaN,” Appl. Phys. Lett. 99(4), 041107 (2011).
[CrossRef]

C. Y. Cho, M. K. Kwon, S. J. Lee, S. H. Han, J. W. Kang, S. E. Kang, D. Y. Lee, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN,” Nanotechnology 21(20), 205201 (2010).
[CrossRef] [PubMed]

Lee, S. M.

C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett. 98(5), 051106 (2011).
[CrossRef]

Lee, Y. S.

T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E. K. Suh, “Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster,” Appl. Phys. Lett. 95(11), 111112 (2009).
[CrossRef]

Lin, C. F.

C. F. Lin, C.-C. Yang, C.-M. Lin, K.-T. Chen, C.-W. Hu, and J.-D. Tsay, “InGaN-based light-emitting diodes with a multiple air gap layer,” Electrochem. Solid-State Lett. 12(10), H365–H368 (2009).
[CrossRef]

Lin, C.-M.

C. F. Lin, C.-C. Yang, C.-M. Lin, K.-T. Chen, C.-W. Hu, and J.-D. Tsay, “InGaN-based light-emitting diodes with a multiple air gap layer,” Electrochem. Solid-State Lett. 12(10), H365–H368 (2009).
[CrossRef]

Lindow, E.

I. Han, R. Datta, S. Mahajan, R. Bertram, E. Lindow, C. Werkhoven, and C. Arena, “Characterization of threading dislocations in GaN using low-temperature aqueous KOH etching and atomic force microscopy,” Scr. Mater. 59(11), 1171–1173 (2008).
[CrossRef]

Lu, Y. C.

D. M. Yeh, C. Y. Chen, Y. C. Lu, C. F. Huang, and C. C. Yang, “Formation of various metal nanostructures with thermal annealing to control the effective coupling energy between a surface plasmon and an InGaN/GaN quantum well,” Nanotechnology 18(26), 265402 (2007).
[CrossRef] [PubMed]

Mahajan, S.

I. Han, R. Datta, S. Mahajan, R. Bertram, E. Lindow, C. Werkhoven, and C. Arena, “Characterization of threading dislocations in GaN using low-temperature aqueous KOH etching and atomic force microscopy,” Scr. Mater. 59(11), 1171–1173 (2008).
[CrossRef]

Minsky, M. S.

M. S. Minsky, S. Watanabe, and N. Yamada, “Radiative and nonradiative lifetimes in GaInN/GaN multiquantum wells,” J. Appl. Phys. 91(8), 5176–5181 (2002).
[CrossRef]

Molnar, R. J.

C. Youtsey, L. T. Romano, R. J. Molnar, and I. Adesida, “Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching,” Appl. Phys. Lett. 74(23), 3537–3539 (1999).
[CrossRef]

Moon, Y. T.

F. Yun, Y. Fu, Y. T. Moon, U. Ozgur, J. Q. Xie, S. Dogan, H. Morkoc, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith, “Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templates,” Phys. Status Solidi., A Appl. Mater. Sci. 202(5), 749–753 (2005).
[CrossRef]

Morkoc, H.

F. Yun, Y. Fu, Y. T. Moon, U. Ozgur, J. Q. Xie, S. Dogan, H. Morkoc, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith, “Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templates,” Phys. Status Solidi., A Appl. Mater. Sci. 202(5), 749–753 (2005).
[CrossRef]

Mukai, T.

K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater. 3(9), 601–605 (2004).
[CrossRef] [PubMed]

Nakamura, S.

T. Izumi, Y. Narukawa, K. Okamoto, Y. Kawakami, S. Fujita, and S. Nakamura, “Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution,” J. Lumin. 87-89, 1196–1198 (2000).
[CrossRef]

Narukawa, Y.

K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater. 3(9), 601–605 (2004).
[CrossRef] [PubMed]

T. Izumi, Y. Narukawa, K. Okamoto, Y. Kawakami, S. Fujita, and S. Nakamura, “Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution,” J. Lumin. 87-89, 1196–1198 (2000).
[CrossRef]

Niki, I.

K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater. 3(9), 601–605 (2004).
[CrossRef] [PubMed]

Oh, T. S.

T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E. K. Suh, “Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster,” Appl. Phys. Lett. 95(11), 111112 (2009).
[CrossRef]

Okamoto, K.

K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater. 3(9), 601–605 (2004).
[CrossRef] [PubMed]

T. Izumi, Y. Narukawa, K. Okamoto, Y. Kawakami, S. Fujita, and S. Nakamura, “Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution,” J. Lumin. 87-89, 1196–1198 (2000).
[CrossRef]

Ozgur, U.

F. Yun, Y. Fu, Y. T. Moon, U. Ozgur, J. Q. Xie, S. Dogan, H. Morkoc, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith, “Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templates,” Phys. Status Solidi., A Appl. Mater. Sci. 202(5), 749–753 (2005).
[CrossRef]

Park, A. H.

T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E. K. Suh, “Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster,” Appl. Phys. Lett. 95(11), 111112 (2009).
[CrossRef]

Park, I. K.

M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.) 20(7), 1253–1257 (2008).
[CrossRef]

Park, S. J.

C. Y. Cho, K. S. Kim, S. J. Lee, M. K. Kwon, H. D. Ko, S. T. Kim, G. Y. Jung, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks embedded in p-GaN,” Appl. Phys. Lett. 99(4), 041107 (2011).
[CrossRef]

C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett. 98(5), 051106 (2011).
[CrossRef]

C. Y. Cho, M. K. Kwon, S. J. Lee, S. H. Han, J. W. Kang, S. E. Kang, D. Y. Lee, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN,” Nanotechnology 21(20), 205201 (2010).
[CrossRef] [PubMed]

M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.) 20(7), 1253–1257 (2008).
[CrossRef]

Romano, L. T.

C. Youtsey, L. T. Romano, R. J. Molnar, and I. Adesida, “Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching,” Appl. Phys. Lett. 74(23), 3537–3539 (1999).
[CrossRef]

Sari, E.

L. W. Jang, J. W. Ju, J. W. Jeon, D. W. Jeon, J. H. Choi, S. J. Lee, S. R. Jeon, J. H. Baek, E. Sari, H. V. Demir, H. D. Yoon, S. M. Hwang, and I. H. Lee, “Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures,” Proc. SPIE 7945, 794511 (2011).
[CrossRef]

Scherer, A.

K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater. 3(9), 601–605 (2004).
[CrossRef] [PubMed]

Seo, T. H.

T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E. K. Suh, “Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster,” Appl. Phys. Lett. 95(11), 111112 (2009).
[CrossRef]

Shvartser, A.

K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater. 3(9), 601–605 (2004).
[CrossRef] [PubMed]

Smith, D. J.

F. Yun, Y. Fu, Y. T. Moon, U. Ozgur, J. Q. Xie, S. Dogan, H. Morkoc, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith, “Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templates,” Phys. Status Solidi., A Appl. Mater. Sci. 202(5), 749–753 (2005).
[CrossRef]

Song, J. H.

C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett. 98(5), 051106 (2011).
[CrossRef]

Suh, E. K.

T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E. K. Suh, “Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster,” Appl. Phys. Lett. 95(11), 111112 (2009).
[CrossRef]

Tsay, J.-D.

C. F. Lin, C.-C. Yang, C.-M. Lin, K.-T. Chen, C.-W. Hu, and J.-D. Tsay, “InGaN-based light-emitting diodes with a multiple air gap layer,” Electrochem. Solid-State Lett. 12(10), H365–H368 (2009).
[CrossRef]

Watanabe, S.

M. S. Minsky, S. Watanabe, and N. Yamada, “Radiative and nonradiative lifetimes in GaInN/GaN multiquantum wells,” J. Appl. Phys. 91(8), 5176–5181 (2002).
[CrossRef]

Werkhoven, C.

I. Han, R. Datta, S. Mahajan, R. Bertram, E. Lindow, C. Werkhoven, and C. Arena, “Characterization of threading dislocations in GaN using low-temperature aqueous KOH etching and atomic force microscopy,” Scr. Mater. 59(11), 1171–1173 (2008).
[CrossRef]

Xie, J. Q.

F. Yun, Y. Fu, Y. T. Moon, U. Ozgur, J. Q. Xie, S. Dogan, H. Morkoc, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith, “Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templates,” Phys. Status Solidi., A Appl. Mater. Sci. 202(5), 749–753 (2005).
[CrossRef]

Yamada, N.

M. S. Minsky, S. Watanabe, and N. Yamada, “Radiative and nonradiative lifetimes in GaInN/GaN multiquantum wells,” J. Appl. Phys. 91(8), 5176–5181 (2002).
[CrossRef]

Yang, C. C.

D. M. Yeh, C. Y. Chen, Y. C. Lu, C. F. Huang, and C. C. Yang, “Formation of various metal nanostructures with thermal annealing to control the effective coupling energy between a surface plasmon and an InGaN/GaN quantum well,” Nanotechnology 18(26), 265402 (2007).
[CrossRef] [PubMed]

Yang, C.-C.

C. F. Lin, C.-C. Yang, C.-M. Lin, K.-T. Chen, C.-W. Hu, and J.-D. Tsay, “InGaN-based light-emitting diodes with a multiple air gap layer,” Electrochem. Solid-State Lett. 12(10), H365–H368 (2009).
[CrossRef]

Yeh, D. M.

D. M. Yeh, C. Y. Chen, Y. C. Lu, C. F. Huang, and C. C. Yang, “Formation of various metal nanostructures with thermal annealing to control the effective coupling energy between a surface plasmon and an InGaN/GaN quantum well,” Nanotechnology 18(26), 265402 (2007).
[CrossRef] [PubMed]

Yoon, H. D.

L. W. Jang, J. W. Ju, J. W. Jeon, D. W. Jeon, J. H. Choi, S. J. Lee, S. R. Jeon, J. H. Baek, E. Sari, H. V. Demir, H. D. Yoon, S. M. Hwang, and I. H. Lee, “Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures,” Proc. SPIE 7945, 794511 (2011).
[CrossRef]

Youtsey, C.

C. Youtsey, L. T. Romano, R. J. Molnar, and I. Adesida, “Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching,” Appl. Phys. Lett. 74(23), 3537–3539 (1999).
[CrossRef]

Yun, F.

F. Yun, Y. Fu, Y. T. Moon, U. Ozgur, J. Q. Xie, S. Dogan, H. Morkoc, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith, “Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templates,” Phys. Status Solidi., A Appl. Mater. Sci. 202(5), 749–753 (2005).
[CrossRef]

Zhou, L.

F. Yun, Y. Fu, Y. T. Moon, U. Ozgur, J. Q. Xie, S. Dogan, H. Morkoc, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith, “Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templates,” Phys. Status Solidi., A Appl. Mater. Sci. 202(5), 749–753 (2005).
[CrossRef]

Adv. Mater. (Deerfield Beach Fla.) (1)

M. K. Kwon, J. Y. Kim, B. H. Kim, I. K. Park, C. Y. Cho, C. C. Byeon, and S. J. Park, “Surface-plasmon-enhanced light-emitting diodes,” Adv. Mater. (Deerfield Beach Fla.) 20(7), 1253–1257 (2008).
[CrossRef]

Appl. Phys. Lett. (4)

T. S. Oh, H. Jeong, Y. S. Lee, J. D. Kim, T. H. Seo, H. Kim, A. H. Park, K. J. Lee, and E. K. Suh, “Coupling of InGaN/GaN multiquantum-wells photoluminescence to surface plasmons in platinum nanocluster,” Appl. Phys. Lett. 95(11), 111112 (2009).
[CrossRef]

C. Y. Cho, S. J. Lee, J. H. Song, S. H. Hong, S. M. Lee, Y. H. Cho, and S. J. Park, “Enhanced optical output power of green light-emitting diodes by surface plasmon of gold nanoparticles,” Appl. Phys. Lett. 98(5), 051106 (2011).
[CrossRef]

C. Y. Cho, K. S. Kim, S. J. Lee, M. K. Kwon, H. D. Ko, S. T. Kim, G. Y. Jung, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes with silver nanoparticles and SiO2 nano-disks embedded in p-GaN,” Appl. Phys. Lett. 99(4), 041107 (2011).
[CrossRef]

C. Youtsey, L. T. Romano, R. J. Molnar, and I. Adesida, “Rapid evaluation of dislocation densities in n-type GaN films using photoenhanced wet etching,” Appl. Phys. Lett. 74(23), 3537–3539 (1999).
[CrossRef]

Electrochem. Solid-State Lett. (1)

C. F. Lin, C.-C. Yang, C.-M. Lin, K.-T. Chen, C.-W. Hu, and J.-D. Tsay, “InGaN-based light-emitting diodes with a multiple air gap layer,” Electrochem. Solid-State Lett. 12(10), H365–H368 (2009).
[CrossRef]

J. Appl. Phys. (1)

M. S. Minsky, S. Watanabe, and N. Yamada, “Radiative and nonradiative lifetimes in GaInN/GaN multiquantum wells,” J. Appl. Phys. 91(8), 5176–5181 (2002).
[CrossRef]

J. Lumin. (1)

T. Izumi, Y. Narukawa, K. Okamoto, Y. Kawakami, S. Fujita, and S. Nakamura, “Time-resolved photoluminescence spectroscopy in GaN-based semiconductors with micron spatial resolution,” J. Lumin. 87-89, 1196–1198 (2000).
[CrossRef]

Nanotechnology (2)

C. Y. Cho, M. K. Kwon, S. J. Lee, S. H. Han, J. W. Kang, S. E. Kang, D. Y. Lee, and S. J. Park, “Surface plasmon-enhanced light-emitting diodes using silver nanoparticles embedded in p-GaN,” Nanotechnology 21(20), 205201 (2010).
[CrossRef] [PubMed]

D. M. Yeh, C. Y. Chen, Y. C. Lu, C. F. Huang, and C. C. Yang, “Formation of various metal nanostructures with thermal annealing to control the effective coupling energy between a surface plasmon and an InGaN/GaN quantum well,” Nanotechnology 18(26), 265402 (2007).
[CrossRef] [PubMed]

Nat. Mater. (1)

K. Okamoto, I. Niki, A. Shvartser, Y. Narukawa, T. Mukai, and A. Scherer, “Surface-plasmon-enhanced light emitters based on InGaN quantum wells,” Nat. Mater. 3(9), 601–605 (2004).
[CrossRef] [PubMed]

Phys. Status Solidi., A Appl. Mater. Sci. (1)

F. Yun, Y. Fu, Y. T. Moon, U. Ozgur, J. Q. Xie, S. Dogan, H. Morkoc, C. K. Inoki, T. S. Kuan, L. Zhou, and D. J. Smith, “Reduction of threading dislocations in GaN overgrowth by MOCVD on TiN porous network templates,” Phys. Status Solidi., A Appl. Mater. Sci. 202(5), 749–753 (2005).
[CrossRef]

Proc. SPIE (1)

L. W. Jang, J. W. Ju, J. W. Jeon, D. W. Jeon, J. H. Choi, S. J. Lee, S. R. Jeon, J. H. Baek, E. Sari, H. V. Demir, H. D. Yoon, S. M. Hwang, and I. H. Lee, “Enhanced optical characteristics of light emitting diodes by surface plasmon of Ag nanostructures,” Proc. SPIE 7945, 794511 (2011).
[CrossRef]

Scr. Mater. (1)

I. Han, R. Datta, S. Mahajan, R. Bertram, E. Lindow, C. Werkhoven, and C. Arena, “Characterization of threading dislocations in GaN using low-temperature aqueous KOH etching and atomic force microscopy,” Scr. Mater. 59(11), 1171–1173 (2008).
[CrossRef]

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (4)

Fig. 1
Fig. 1

Schematic fabrication process of the Ag embedded sample after PEC wet etching (left) and the SEM images of each processes (right); (a) GaN template before PEC etching, (b) nano-needle structure and SEM image after PEC, (c) Ag deposition on nano-needle structure, (d) re-grown LED sample, (e) photograph of re-grown LED.

Fig. 2
Fig. 2

AFM image of control sample (a) and Ag embedded sample (b). The scan area is 1 μm x 1 μm.

Fig. 3
Fig. 3

Current-voltage characteristics (a), optical output power versus driving current characteristics (b) and room temperature PL spectra of InGaN/GaN MQW LED of control (black line) and Ag embedded sample (red dotted line).

Fig. 4
Fig. 4

Room temperature PL relaxation curves for the peak PL energy for the control sample (solid squares, black) and PEC etched, Ag embedded sample (open circles, red) at room temperature.

Metrics