Abstract

In this letter, TiO2 nanocrystalline film was prepared on SrTiO3 (001) substrate to form an n-n heterojunction active layer. Interdigitated Au electrodes were deposited on the top of TiO2 film to fabricate modified HMSM (heterojunction metal-semiconductor-metal) ultraviolet photodetector. At 10 V bias, the dark current of the detector was only 0.2 nA and the responsivity was 46.1 A/W at 260 nm. The rise and fall times of the device were 3.5 ms and 1.4 s, respectively. The TiO2/SrTiO3 heterojunction contributed a lot to the high responsivity and reduced the fall time, which improved the device performance effectively. These results demonstrate the excellent application of TiO2/SrTiO3 heterojunction in fabricating high performance UV photodetectors.

© 2012 OSA

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  1. H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, W. Chen, S. Ruan, and Q. Xu, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90(20), 201118 (2007).
    [CrossRef]
  2. H. Zhang, S. Ruan, T. Xie, C. Feng, P. Qu, W. Chen, and W. Dong, “Zr0.27Ti0.73O2-Based MSM ultraviolet detectors with Pt electrodes,” IEEE Electron Device Lett. 32(5), 653–655 (2011).
    [CrossRef]
  3. M. L. Lee, T. S. Mue, F. W. Huang, J. H. Yang, and J. K. Sheu, “High-performance GaN metal-insulator-semiconductor ultraviolet photodetectors using gallium oxide as gate layer,” Opt. Express 19(13), 12658–12663 (2011).
    [CrossRef] [PubMed]
  4. A. Vert, S. Soloviev, J. Fronheiser, and P. Sandvik, “Solar-blind 4H-SiC single-photon avalanche diode operating in Geiger mode,” IEEE Photon. Technol. Lett. 20(18), 1587–1589 (2008).
    [CrossRef]
  5. W. Dai, Q. Yang, F. Gu, and L. Tong, “ZnO subwavelength wires for fast-response mid-infrared detection,” Opt. Express 17(24), 21808–21812 (2009).
    [CrossRef] [PubMed]
  6. X. Kong, C. Liu, W. Dong, X. Zhang, C. Tao, L. Shen, J. Zhou, Y. Fei, and S. Ruan, “Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes,” Appl. Phys. Lett. 94(12), 123502 (2009).
    [CrossRef]
  7. J. Xing, E. Guo, K. J. Jin, H. Lu, J. Wen, and G. Yang, “Solar-blind deep-ultraviolet photodetectors based on an LaAlO3 single crystal,” Opt. Lett. 34(11), 1675–1677 (2009).
    [CrossRef] [PubMed]
  8. J. Xing, K. Zhao, H. B. Lu, X. Wang, G. Z. Liu, K. J. Jin, M. He, C. C. Wang, and G. Z. Yang, “Visible-blind, ultraviolet-sensitive photodetector based an SrTiO3 single crystal,” Opt. Lett. 32(17), 2526–2528 (2007).
    [CrossRef] [PubMed]
  9. W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, T. Venkatesan, and H. Shen, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films,” Appl. Phys. Lett. 78(18), 2787–2789 (2001).
    [CrossRef]
  10. Z. Sheng, L. Liu, J. Brouckaert, S. L. He, and D. Van Thourhout, “InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides,” Opt. Express 18(2), 1756–1761 (2010).
    [CrossRef] [PubMed]
  11. S. Zhang, W. Wang, I. Shtau, F. Yun, L. He, H. Morkoc, X. Zhou, M. Tamargo, and R. R. Alfano, “Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain,” Appl. Phys. Lett. 81(25), 4862–4864 (2002).
    [CrossRef]
  12. B. Nabet, “A heterojunction metal-semiconductor-metal photodetector,” IEEE Photon. Technol. Lett. 9(2), 223–225 (1997).
    [CrossRef]
  13. J. Zhang, J. H. Bang, C. Tang, and P. V. Kamat, “Tailored TiO2-SrTiO3 heterostructure nanotube arrays for improved photoelectrochemical performance,” ACS Nano 4(1), 387–395 (2010).
    [CrossRef] [PubMed]
  14. Y. Diamant, S. Chen, O. Melamed, and A. Zaban, “Core-shell nanoporous electrode for dye sensitized solar cells: the effect of the SrTiO3 shell on the electronic properties of the TiO2 core,” J. Phys. Chem. B 107(9), 1977–1981 (2003).
    [CrossRef]
  15. H. Xue, W. Chen, C. Liu, X. Kong, P. Qu, Z. Liu, J. Zhou, L. Shen, Z. Zhong, and S. Ruan, “Fabrication of TiO2 Schottky barrier diodes by RF magnetron sputtering,” in Proceedings of IEEE Conference on Nano/Micro Engineered and Molecular Systems (IEEE, Sanya, China, 2008), pp. 108–111.
  16. U. Diebold, N. Ruzycki, G. S. Herman, and A. Selloni, “One step towards bridging the materials gap: surface studies of TiO2 anatase,” Catal. Today 85(2-4), 93–100 (2003).
    [CrossRef]
  17. O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Gain mechanism in GaN Schottky ultraviolet detectors,” Appl. Phys. Lett. 79(10), 1417–1419 (2001).
    [CrossRef]
  18. J. W. Little, S. P. Svensson, W. A. Beck, A. C. Goldberg, S. W. Kennerly, T. Hongsmatip, M. Winn, and P. Uppal, “Thin active region, type II superlattice photodiode arrays: Single-pixel and focal plane array characterization,” J. Appl. Phys. 101(4), 044514 (2007).
    [CrossRef]
  19. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, 1981), Chap. 13.
  20. K. Schwarzburg and F. Willig, “Influence of trap filling on photocurrent transients in polycrystalline TiO2,” Appl. Phys. Lett. 58(22), 2520–2522 (1991).
    [CrossRef]
  21. K. M. Kim, B. J. Choi, M. H. Lee, G. H. Kim, S. J. Song, J. Y. Seok, J. H. Yoon, S. Han, and C. S. Hwang, “A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure,” Nanotechnology 22(25), 254010 (2011).
    [CrossRef] [PubMed]
  22. I. P. Raevski, S. M. Maksimov, A. V. Fisenko, S. A. Prosandeyev, I. A. Osipenko, and P. F. Tarasenko, “Study of intrinsic point defects in oxides of the perovskite family: II. Experiment,” J. Phys. Condens. Matter 10(36), 8015–8032 (1998).
    [CrossRef]

2011 (3)

H. Zhang, S. Ruan, T. Xie, C. Feng, P. Qu, W. Chen, and W. Dong, “Zr0.27Ti0.73O2-Based MSM ultraviolet detectors with Pt electrodes,” IEEE Electron Device Lett. 32(5), 653–655 (2011).
[CrossRef]

K. M. Kim, B. J. Choi, M. H. Lee, G. H. Kim, S. J. Song, J. Y. Seok, J. H. Yoon, S. Han, and C. S. Hwang, “A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure,” Nanotechnology 22(25), 254010 (2011).
[CrossRef] [PubMed]

M. L. Lee, T. S. Mue, F. W. Huang, J. H. Yang, and J. K. Sheu, “High-performance GaN metal-insulator-semiconductor ultraviolet photodetectors using gallium oxide as gate layer,” Opt. Express 19(13), 12658–12663 (2011).
[CrossRef] [PubMed]

2010 (2)

Z. Sheng, L. Liu, J. Brouckaert, S. L. He, and D. Van Thourhout, “InGaAs PIN photodetectors integrated on silicon-on-insulator waveguides,” Opt. Express 18(2), 1756–1761 (2010).
[CrossRef] [PubMed]

J. Zhang, J. H. Bang, C. Tang, and P. V. Kamat, “Tailored TiO2-SrTiO3 heterostructure nanotube arrays for improved photoelectrochemical performance,” ACS Nano 4(1), 387–395 (2010).
[CrossRef] [PubMed]

2009 (3)

2008 (1)

A. Vert, S. Soloviev, J. Fronheiser, and P. Sandvik, “Solar-blind 4H-SiC single-photon avalanche diode operating in Geiger mode,” IEEE Photon. Technol. Lett. 20(18), 1587–1589 (2008).
[CrossRef]

2007 (3)

H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, W. Chen, S. Ruan, and Q. Xu, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90(20), 201118 (2007).
[CrossRef]

J. Xing, K. Zhao, H. B. Lu, X. Wang, G. Z. Liu, K. J. Jin, M. He, C. C. Wang, and G. Z. Yang, “Visible-blind, ultraviolet-sensitive photodetector based an SrTiO3 single crystal,” Opt. Lett. 32(17), 2526–2528 (2007).
[CrossRef] [PubMed]

J. W. Little, S. P. Svensson, W. A. Beck, A. C. Goldberg, S. W. Kennerly, T. Hongsmatip, M. Winn, and P. Uppal, “Thin active region, type II superlattice photodiode arrays: Single-pixel and focal plane array characterization,” J. Appl. Phys. 101(4), 044514 (2007).
[CrossRef]

2003 (2)

Y. Diamant, S. Chen, O. Melamed, and A. Zaban, “Core-shell nanoporous electrode for dye sensitized solar cells: the effect of the SrTiO3 shell on the electronic properties of the TiO2 core,” J. Phys. Chem. B 107(9), 1977–1981 (2003).
[CrossRef]

U. Diebold, N. Ruzycki, G. S. Herman, and A. Selloni, “One step towards bridging the materials gap: surface studies of TiO2 anatase,” Catal. Today 85(2-4), 93–100 (2003).
[CrossRef]

2002 (1)

S. Zhang, W. Wang, I. Shtau, F. Yun, L. He, H. Morkoc, X. Zhou, M. Tamargo, and R. R. Alfano, “Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain,” Appl. Phys. Lett. 81(25), 4862–4864 (2002).
[CrossRef]

2001 (2)

O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Gain mechanism in GaN Schottky ultraviolet detectors,” Appl. Phys. Lett. 79(10), 1417–1419 (2001).
[CrossRef]

W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, T. Venkatesan, and H. Shen, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films,” Appl. Phys. Lett. 78(18), 2787–2789 (2001).
[CrossRef]

1998 (1)

I. P. Raevski, S. M. Maksimov, A. V. Fisenko, S. A. Prosandeyev, I. A. Osipenko, and P. F. Tarasenko, “Study of intrinsic point defects in oxides of the perovskite family: II. Experiment,” J. Phys. Condens. Matter 10(36), 8015–8032 (1998).
[CrossRef]

1997 (1)

B. Nabet, “A heterojunction metal-semiconductor-metal photodetector,” IEEE Photon. Technol. Lett. 9(2), 223–225 (1997).
[CrossRef]

1991 (1)

K. Schwarzburg and F. Willig, “Influence of trap filling on photocurrent transients in polycrystalline TiO2,” Appl. Phys. Lett. 58(22), 2520–2522 (1991).
[CrossRef]

Alfano, R. R.

S. Zhang, W. Wang, I. Shtau, F. Yun, L. He, H. Morkoc, X. Zhou, M. Tamargo, and R. R. Alfano, “Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain,” Appl. Phys. Lett. 81(25), 4862–4864 (2002).
[CrossRef]

Bahir, G.

O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Gain mechanism in GaN Schottky ultraviolet detectors,” Appl. Phys. Lett. 79(10), 1417–1419 (2001).
[CrossRef]

Bang, J. H.

J. Zhang, J. H. Bang, C. Tang, and P. V. Kamat, “Tailored TiO2-SrTiO3 heterostructure nanotube arrays for improved photoelectrochemical performance,” ACS Nano 4(1), 387–395 (2010).
[CrossRef] [PubMed]

Beck, W. A.

J. W. Little, S. P. Svensson, W. A. Beck, A. C. Goldberg, S. W. Kennerly, T. Hongsmatip, M. Winn, and P. Uppal, “Thin active region, type II superlattice photodiode arrays: Single-pixel and focal plane array characterization,” J. Appl. Phys. 101(4), 044514 (2007).
[CrossRef]

Brouckaert, J.

Chen, S.

Y. Diamant, S. Chen, O. Melamed, and A. Zaban, “Core-shell nanoporous electrode for dye sensitized solar cells: the effect of the SrTiO3 shell on the electronic properties of the TiO2 core,” J. Phys. Chem. B 107(9), 1977–1981 (2003).
[CrossRef]

Chen, W.

H. Zhang, S. Ruan, T. Xie, C. Feng, P. Qu, W. Chen, and W. Dong, “Zr0.27Ti0.73O2-Based MSM ultraviolet detectors with Pt electrodes,” IEEE Electron Device Lett. 32(5), 653–655 (2011).
[CrossRef]

H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, W. Chen, S. Ruan, and Q. Xu, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90(20), 201118 (2007).
[CrossRef]

Choi, B. J.

K. M. Kim, B. J. Choi, M. H. Lee, G. H. Kim, S. J. Song, J. Y. Seok, J. H. Yoon, S. Han, and C. S. Hwang, “A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure,” Nanotechnology 22(25), 254010 (2011).
[CrossRef] [PubMed]

Choopun, S.

W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, T. Venkatesan, and H. Shen, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films,” Appl. Phys. Lett. 78(18), 2787–2789 (2001).
[CrossRef]

Dai, W.

Diamant, Y.

Y. Diamant, S. Chen, O. Melamed, and A. Zaban, “Core-shell nanoporous electrode for dye sensitized solar cells: the effect of the SrTiO3 shell on the electronic properties of the TiO2 core,” J. Phys. Chem. B 107(9), 1977–1981 (2003).
[CrossRef]

Diebold, U.

U. Diebold, N. Ruzycki, G. S. Herman, and A. Selloni, “One step towards bridging the materials gap: surface studies of TiO2 anatase,” Catal. Today 85(2-4), 93–100 (2003).
[CrossRef]

Dong, W.

H. Zhang, S. Ruan, T. Xie, C. Feng, P. Qu, W. Chen, and W. Dong, “Zr0.27Ti0.73O2-Based MSM ultraviolet detectors with Pt electrodes,” IEEE Electron Device Lett. 32(5), 653–655 (2011).
[CrossRef]

X. Kong, C. Liu, W. Dong, X. Zhang, C. Tao, L. Shen, J. Zhou, Y. Fei, and S. Ruan, “Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes,” Appl. Phys. Lett. 94(12), 123502 (2009).
[CrossRef]

Fei, Y.

X. Kong, C. Liu, W. Dong, X. Zhang, C. Tao, L. Shen, J. Zhou, Y. Fei, and S. Ruan, “Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes,” Appl. Phys. Lett. 94(12), 123502 (2009).
[CrossRef]

Feng, C.

H. Zhang, S. Ruan, T. Xie, C. Feng, P. Qu, W. Chen, and W. Dong, “Zr0.27Ti0.73O2-Based MSM ultraviolet detectors with Pt electrodes,” IEEE Electron Device Lett. 32(5), 653–655 (2011).
[CrossRef]

Fisenko, A. V.

I. P. Raevski, S. M. Maksimov, A. V. Fisenko, S. A. Prosandeyev, I. A. Osipenko, and P. F. Tarasenko, “Study of intrinsic point defects in oxides of the perovskite family: II. Experiment,” J. Phys. Condens. Matter 10(36), 8015–8032 (1998).
[CrossRef]

Fronheiser, J.

A. Vert, S. Soloviev, J. Fronheiser, and P. Sandvik, “Solar-blind 4H-SiC single-photon avalanche diode operating in Geiger mode,” IEEE Photon. Technol. Lett. 20(18), 1587–1589 (2008).
[CrossRef]

Garber, V.

O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Gain mechanism in GaN Schottky ultraviolet detectors,” Appl. Phys. Lett. 79(10), 1417–1419 (2001).
[CrossRef]

Goldberg, A. C.

J. W. Little, S. P. Svensson, W. A. Beck, A. C. Goldberg, S. W. Kennerly, T. Hongsmatip, M. Winn, and P. Uppal, “Thin active region, type II superlattice photodiode arrays: Single-pixel and focal plane array characterization,” J. Appl. Phys. 101(4), 044514 (2007).
[CrossRef]

Gu, F.

Guo, E.

Han, S.

K. M. Kim, B. J. Choi, M. H. Lee, G. H. Kim, S. J. Song, J. Y. Seok, J. H. Yoon, S. Han, and C. S. Hwang, “A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure,” Nanotechnology 22(25), 254010 (2011).
[CrossRef] [PubMed]

He, L.

S. Zhang, W. Wang, I. Shtau, F. Yun, L. He, H. Morkoc, X. Zhou, M. Tamargo, and R. R. Alfano, “Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain,” Appl. Phys. Lett. 81(25), 4862–4864 (2002).
[CrossRef]

He, M.

He, S. L.

Herman, G. S.

U. Diebold, N. Ruzycki, G. S. Herman, and A. Selloni, “One step towards bridging the materials gap: surface studies of TiO2 anatase,” Catal. Today 85(2-4), 93–100 (2003).
[CrossRef]

Hongsmatip, T.

J. W. Little, S. P. Svensson, W. A. Beck, A. C. Goldberg, S. W. Kennerly, T. Hongsmatip, M. Winn, and P. Uppal, “Thin active region, type II superlattice photodiode arrays: Single-pixel and focal plane array characterization,” J. Appl. Phys. 101(4), 044514 (2007).
[CrossRef]

Huang, F. W.

Hwang, C. S.

K. M. Kim, B. J. Choi, M. H. Lee, G. H. Kim, S. J. Song, J. Y. Seok, J. H. Yoon, S. Han, and C. S. Hwang, “A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure,” Nanotechnology 22(25), 254010 (2011).
[CrossRef] [PubMed]

Jin, K. J.

Kamat, P. V.

J. Zhang, J. H. Bang, C. Tang, and P. V. Kamat, “Tailored TiO2-SrTiO3 heterostructure nanotube arrays for improved photoelectrochemical performance,” ACS Nano 4(1), 387–395 (2010).
[CrossRef] [PubMed]

Katz, O.

O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Gain mechanism in GaN Schottky ultraviolet detectors,” Appl. Phys. Lett. 79(10), 1417–1419 (2001).
[CrossRef]

Kennerly, S. W.

J. W. Little, S. P. Svensson, W. A. Beck, A. C. Goldberg, S. W. Kennerly, T. Hongsmatip, M. Winn, and P. Uppal, “Thin active region, type II superlattice photodiode arrays: Single-pixel and focal plane array characterization,” J. Appl. Phys. 101(4), 044514 (2007).
[CrossRef]

Kim, G. H.

K. M. Kim, B. J. Choi, M. H. Lee, G. H. Kim, S. J. Song, J. Y. Seok, J. H. Yoon, S. Han, and C. S. Hwang, “A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure,” Nanotechnology 22(25), 254010 (2011).
[CrossRef] [PubMed]

Kim, K. M.

K. M. Kim, B. J. Choi, M. H. Lee, G. H. Kim, S. J. Song, J. Y. Seok, J. H. Yoon, S. Han, and C. S. Hwang, “A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure,” Nanotechnology 22(25), 254010 (2011).
[CrossRef] [PubMed]

Kong, X.

X. Kong, C. Liu, W. Dong, X. Zhang, C. Tao, L. Shen, J. Zhou, Y. Fei, and S. Ruan, “Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes,” Appl. Phys. Lett. 94(12), 123502 (2009).
[CrossRef]

H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, W. Chen, S. Ruan, and Q. Xu, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90(20), 201118 (2007).
[CrossRef]

Lee, M. H.

K. M. Kim, B. J. Choi, M. H. Lee, G. H. Kim, S. J. Song, J. Y. Seok, J. H. Yoon, S. Han, and C. S. Hwang, “A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure,” Nanotechnology 22(25), 254010 (2011).
[CrossRef] [PubMed]

Lee, M. L.

Little, J. W.

J. W. Little, S. P. Svensson, W. A. Beck, A. C. Goldberg, S. W. Kennerly, T. Hongsmatip, M. Winn, and P. Uppal, “Thin active region, type II superlattice photodiode arrays: Single-pixel and focal plane array characterization,” J. Appl. Phys. 101(4), 044514 (2007).
[CrossRef]

Liu, C.

X. Kong, C. Liu, W. Dong, X. Zhang, C. Tao, L. Shen, J. Zhou, Y. Fei, and S. Ruan, “Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes,” Appl. Phys. Lett. 94(12), 123502 (2009).
[CrossRef]

H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, W. Chen, S. Ruan, and Q. Xu, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90(20), 201118 (2007).
[CrossRef]

Liu, G. Z.

Liu, L.

Liu, Z.

H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, W. Chen, S. Ruan, and Q. Xu, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90(20), 201118 (2007).
[CrossRef]

Lu, H.

Lu, H. B.

Maksimov, S. M.

I. P. Raevski, S. M. Maksimov, A. V. Fisenko, S. A. Prosandeyev, I. A. Osipenko, and P. F. Tarasenko, “Study of intrinsic point defects in oxides of the perovskite family: II. Experiment,” J. Phys. Condens. Matter 10(36), 8015–8032 (1998).
[CrossRef]

Melamed, O.

Y. Diamant, S. Chen, O. Melamed, and A. Zaban, “Core-shell nanoporous electrode for dye sensitized solar cells: the effect of the SrTiO3 shell on the electronic properties of the TiO2 core,” J. Phys. Chem. B 107(9), 1977–1981 (2003).
[CrossRef]

Meyler, B.

O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Gain mechanism in GaN Schottky ultraviolet detectors,” Appl. Phys. Lett. 79(10), 1417–1419 (2001).
[CrossRef]

Morkoc, H.

S. Zhang, W. Wang, I. Shtau, F. Yun, L. He, H. Morkoc, X. Zhou, M. Tamargo, and R. R. Alfano, “Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain,” Appl. Phys. Lett. 81(25), 4862–4864 (2002).
[CrossRef]

Mue, T. S.

Nabet, B.

B. Nabet, “A heterojunction metal-semiconductor-metal photodetector,” IEEE Photon. Technol. Lett. 9(2), 223–225 (1997).
[CrossRef]

Osipenko, I. A.

I. P. Raevski, S. M. Maksimov, A. V. Fisenko, S. A. Prosandeyev, I. A. Osipenko, and P. F. Tarasenko, “Study of intrinsic point defects in oxides of the perovskite family: II. Experiment,” J. Phys. Condens. Matter 10(36), 8015–8032 (1998).
[CrossRef]

Prosandeyev, S. A.

I. P. Raevski, S. M. Maksimov, A. V. Fisenko, S. A. Prosandeyev, I. A. Osipenko, and P. F. Tarasenko, “Study of intrinsic point defects in oxides of the perovskite family: II. Experiment,” J. Phys. Condens. Matter 10(36), 8015–8032 (1998).
[CrossRef]

Qu, P.

H. Zhang, S. Ruan, T. Xie, C. Feng, P. Qu, W. Chen, and W. Dong, “Zr0.27Ti0.73O2-Based MSM ultraviolet detectors with Pt electrodes,” IEEE Electron Device Lett. 32(5), 653–655 (2011).
[CrossRef]

Raevski, I. P.

I. P. Raevski, S. M. Maksimov, A. V. Fisenko, S. A. Prosandeyev, I. A. Osipenko, and P. F. Tarasenko, “Study of intrinsic point defects in oxides of the perovskite family: II. Experiment,” J. Phys. Condens. Matter 10(36), 8015–8032 (1998).
[CrossRef]

Ruan, S.

H. Zhang, S. Ruan, T. Xie, C. Feng, P. Qu, W. Chen, and W. Dong, “Zr0.27Ti0.73O2-Based MSM ultraviolet detectors with Pt electrodes,” IEEE Electron Device Lett. 32(5), 653–655 (2011).
[CrossRef]

X. Kong, C. Liu, W. Dong, X. Zhang, C. Tao, L. Shen, J. Zhou, Y. Fei, and S. Ruan, “Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes,” Appl. Phys. Lett. 94(12), 123502 (2009).
[CrossRef]

H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, W. Chen, S. Ruan, and Q. Xu, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90(20), 201118 (2007).
[CrossRef]

Ruzycki, N.

U. Diebold, N. Ruzycki, G. S. Herman, and A. Selloni, “One step towards bridging the materials gap: surface studies of TiO2 anatase,” Catal. Today 85(2-4), 93–100 (2003).
[CrossRef]

Salzman, J.

O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Gain mechanism in GaN Schottky ultraviolet detectors,” Appl. Phys. Lett. 79(10), 1417–1419 (2001).
[CrossRef]

Sandvik, P.

A. Vert, S. Soloviev, J. Fronheiser, and P. Sandvik, “Solar-blind 4H-SiC single-photon avalanche diode operating in Geiger mode,” IEEE Photon. Technol. Lett. 20(18), 1587–1589 (2008).
[CrossRef]

Schwarzburg, K.

K. Schwarzburg and F. Willig, “Influence of trap filling on photocurrent transients in polycrystalline TiO2,” Appl. Phys. Lett. 58(22), 2520–2522 (1991).
[CrossRef]

Selloni, A.

U. Diebold, N. Ruzycki, G. S. Herman, and A. Selloni, “One step towards bridging the materials gap: surface studies of TiO2 anatase,” Catal. Today 85(2-4), 93–100 (2003).
[CrossRef]

Seok, J. Y.

K. M. Kim, B. J. Choi, M. H. Lee, G. H. Kim, S. J. Song, J. Y. Seok, J. H. Yoon, S. Han, and C. S. Hwang, “A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure,” Nanotechnology 22(25), 254010 (2011).
[CrossRef] [PubMed]

Sharma, R. P.

W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, T. Venkatesan, and H. Shen, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films,” Appl. Phys. Lett. 78(18), 2787–2789 (2001).
[CrossRef]

Shen, H.

W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, T. Venkatesan, and H. Shen, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films,” Appl. Phys. Lett. 78(18), 2787–2789 (2001).
[CrossRef]

Shen, L.

X. Kong, C. Liu, W. Dong, X. Zhang, C. Tao, L. Shen, J. Zhou, Y. Fei, and S. Ruan, “Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes,” Appl. Phys. Lett. 94(12), 123502 (2009).
[CrossRef]

Sheng, Z.

Sheu, J. K.

Shtau, I.

S. Zhang, W. Wang, I. Shtau, F. Yun, L. He, H. Morkoc, X. Zhou, M. Tamargo, and R. R. Alfano, “Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain,” Appl. Phys. Lett. 81(25), 4862–4864 (2002).
[CrossRef]

Soloviev, S.

A. Vert, S. Soloviev, J. Fronheiser, and P. Sandvik, “Solar-blind 4H-SiC single-photon avalanche diode operating in Geiger mode,” IEEE Photon. Technol. Lett. 20(18), 1587–1589 (2008).
[CrossRef]

Song, S. J.

K. M. Kim, B. J. Choi, M. H. Lee, G. H. Kim, S. J. Song, J. Y. Seok, J. H. Yoon, S. Han, and C. S. Hwang, “A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure,” Nanotechnology 22(25), 254010 (2011).
[CrossRef] [PubMed]

Svensson, S. P.

J. W. Little, S. P. Svensson, W. A. Beck, A. C. Goldberg, S. W. Kennerly, T. Hongsmatip, M. Winn, and P. Uppal, “Thin active region, type II superlattice photodiode arrays: Single-pixel and focal plane array characterization,” J. Appl. Phys. 101(4), 044514 (2007).
[CrossRef]

Tamargo, M.

S. Zhang, W. Wang, I. Shtau, F. Yun, L. He, H. Morkoc, X. Zhou, M. Tamargo, and R. R. Alfano, “Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain,” Appl. Phys. Lett. 81(25), 4862–4864 (2002).
[CrossRef]

Tang, C.

J. Zhang, J. H. Bang, C. Tang, and P. V. Kamat, “Tailored TiO2-SrTiO3 heterostructure nanotube arrays for improved photoelectrochemical performance,” ACS Nano 4(1), 387–395 (2010).
[CrossRef] [PubMed]

Tao, C.

X. Kong, C. Liu, W. Dong, X. Zhang, C. Tao, L. Shen, J. Zhou, Y. Fei, and S. Ruan, “Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes,” Appl. Phys. Lett. 94(12), 123502 (2009).
[CrossRef]

Tarasenko, P. F.

I. P. Raevski, S. M. Maksimov, A. V. Fisenko, S. A. Prosandeyev, I. A. Osipenko, and P. F. Tarasenko, “Study of intrinsic point defects in oxides of the perovskite family: II. Experiment,” J. Phys. Condens. Matter 10(36), 8015–8032 (1998).
[CrossRef]

Tong, L.

Uppal, P.

J. W. Little, S. P. Svensson, W. A. Beck, A. C. Goldberg, S. W. Kennerly, T. Hongsmatip, M. Winn, and P. Uppal, “Thin active region, type II superlattice photodiode arrays: Single-pixel and focal plane array characterization,” J. Appl. Phys. 101(4), 044514 (2007).
[CrossRef]

Van Thourhout, D.

Venkatesan, T.

W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, T. Venkatesan, and H. Shen, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films,” Appl. Phys. Lett. 78(18), 2787–2789 (2001).
[CrossRef]

Vert, A.

A. Vert, S. Soloviev, J. Fronheiser, and P. Sandvik, “Solar-blind 4H-SiC single-photon avalanche diode operating in Geiger mode,” IEEE Photon. Technol. Lett. 20(18), 1587–1589 (2008).
[CrossRef]

Vispute, R. D.

W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, T. Venkatesan, and H. Shen, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films,” Appl. Phys. Lett. 78(18), 2787–2789 (2001).
[CrossRef]

Wang, C. C.

Wang, W.

S. Zhang, W. Wang, I. Shtau, F. Yun, L. He, H. Morkoc, X. Zhou, M. Tamargo, and R. R. Alfano, “Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain,” Appl. Phys. Lett. 81(25), 4862–4864 (2002).
[CrossRef]

Wang, X.

Wen, J.

Willig, F.

K. Schwarzburg and F. Willig, “Influence of trap filling on photocurrent transients in polycrystalline TiO2,” Appl. Phys. Lett. 58(22), 2520–2522 (1991).
[CrossRef]

Winn, M.

J. W. Little, S. P. Svensson, W. A. Beck, A. C. Goldberg, S. W. Kennerly, T. Hongsmatip, M. Winn, and P. Uppal, “Thin active region, type II superlattice photodiode arrays: Single-pixel and focal plane array characterization,” J. Appl. Phys. 101(4), 044514 (2007).
[CrossRef]

Xie, T.

H. Zhang, S. Ruan, T. Xie, C. Feng, P. Qu, W. Chen, and W. Dong, “Zr0.27Ti0.73O2-Based MSM ultraviolet detectors with Pt electrodes,” IEEE Electron Device Lett. 32(5), 653–655 (2011).
[CrossRef]

Xing, J.

Xu, Q.

H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, W. Chen, S. Ruan, and Q. Xu, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90(20), 201118 (2007).
[CrossRef]

Xue, H.

H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, W. Chen, S. Ruan, and Q. Xu, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90(20), 201118 (2007).
[CrossRef]

Yang, G.

Yang, G. Z.

Yang, J. H.

Yang, Q.

Yang, W.

W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, T. Venkatesan, and H. Shen, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films,” Appl. Phys. Lett. 78(18), 2787–2789 (2001).
[CrossRef]

Yoon, J. H.

K. M. Kim, B. J. Choi, M. H. Lee, G. H. Kim, S. J. Song, J. Y. Seok, J. H. Yoon, S. Han, and C. S. Hwang, “A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure,” Nanotechnology 22(25), 254010 (2011).
[CrossRef] [PubMed]

Yun, F.

S. Zhang, W. Wang, I. Shtau, F. Yun, L. He, H. Morkoc, X. Zhou, M. Tamargo, and R. R. Alfano, “Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain,” Appl. Phys. Lett. 81(25), 4862–4864 (2002).
[CrossRef]

Zaban, A.

Y. Diamant, S. Chen, O. Melamed, and A. Zaban, “Core-shell nanoporous electrode for dye sensitized solar cells: the effect of the SrTiO3 shell on the electronic properties of the TiO2 core,” J. Phys. Chem. B 107(9), 1977–1981 (2003).
[CrossRef]

Zhang, H.

H. Zhang, S. Ruan, T. Xie, C. Feng, P. Qu, W. Chen, and W. Dong, “Zr0.27Ti0.73O2-Based MSM ultraviolet detectors with Pt electrodes,” IEEE Electron Device Lett. 32(5), 653–655 (2011).
[CrossRef]

Zhang, J.

J. Zhang, J. H. Bang, C. Tang, and P. V. Kamat, “Tailored TiO2-SrTiO3 heterostructure nanotube arrays for improved photoelectrochemical performance,” ACS Nano 4(1), 387–395 (2010).
[CrossRef] [PubMed]

Zhang, S.

S. Zhang, W. Wang, I. Shtau, F. Yun, L. He, H. Morkoc, X. Zhou, M. Tamargo, and R. R. Alfano, “Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain,” Appl. Phys. Lett. 81(25), 4862–4864 (2002).
[CrossRef]

Zhang, X.

X. Kong, C. Liu, W. Dong, X. Zhang, C. Tao, L. Shen, J. Zhou, Y. Fei, and S. Ruan, “Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes,” Appl. Phys. Lett. 94(12), 123502 (2009).
[CrossRef]

Zhao, K.

Zhou, J.

X. Kong, C. Liu, W. Dong, X. Zhang, C. Tao, L. Shen, J. Zhou, Y. Fei, and S. Ruan, “Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes,” Appl. Phys. Lett. 94(12), 123502 (2009).
[CrossRef]

H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, W. Chen, S. Ruan, and Q. Xu, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90(20), 201118 (2007).
[CrossRef]

Zhou, X.

S. Zhang, W. Wang, I. Shtau, F. Yun, L. He, H. Morkoc, X. Zhou, M. Tamargo, and R. R. Alfano, “Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain,” Appl. Phys. Lett. 81(25), 4862–4864 (2002).
[CrossRef]

ACS Nano (1)

J. Zhang, J. H. Bang, C. Tang, and P. V. Kamat, “Tailored TiO2-SrTiO3 heterostructure nanotube arrays for improved photoelectrochemical performance,” ACS Nano 4(1), 387–395 (2010).
[CrossRef] [PubMed]

Appl. Phys. Lett. (6)

H. Xue, X. Kong, Z. Liu, C. Liu, J. Zhou, W. Chen, S. Ruan, and Q. Xu, “TiO2 based metal-semiconductor-metal ultraviolet photodetectors,” Appl. Phys. Lett. 90(20), 201118 (2007).
[CrossRef]

X. Kong, C. Liu, W. Dong, X. Zhang, C. Tao, L. Shen, J. Zhou, Y. Fei, and S. Ruan, “Metal-semiconductor-metal TiO2 ultraviolet detectors with Ni electrodes,” Appl. Phys. Lett. 94(12), 123502 (2009).
[CrossRef]

W. Yang, R. D. Vispute, S. Choopun, R. P. Sharma, T. Venkatesan, and H. Shen, “Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films,” Appl. Phys. Lett. 78(18), 2787–2789 (2001).
[CrossRef]

S. Zhang, W. Wang, I. Shtau, F. Yun, L. He, H. Morkoc, X. Zhou, M. Tamargo, and R. R. Alfano, “Backilluminated GaN/AlGaN heterojunction ultraviolet photodetector with high internal gain,” Appl. Phys. Lett. 81(25), 4862–4864 (2002).
[CrossRef]

O. Katz, V. Garber, B. Meyler, G. Bahir, and J. Salzman, “Gain mechanism in GaN Schottky ultraviolet detectors,” Appl. Phys. Lett. 79(10), 1417–1419 (2001).
[CrossRef]

K. Schwarzburg and F. Willig, “Influence of trap filling on photocurrent transients in polycrystalline TiO2,” Appl. Phys. Lett. 58(22), 2520–2522 (1991).
[CrossRef]

Catal. Today (1)

U. Diebold, N. Ruzycki, G. S. Herman, and A. Selloni, “One step towards bridging the materials gap: surface studies of TiO2 anatase,” Catal. Today 85(2-4), 93–100 (2003).
[CrossRef]

IEEE Electron Device Lett. (1)

H. Zhang, S. Ruan, T. Xie, C. Feng, P. Qu, W. Chen, and W. Dong, “Zr0.27Ti0.73O2-Based MSM ultraviolet detectors with Pt electrodes,” IEEE Electron Device Lett. 32(5), 653–655 (2011).
[CrossRef]

IEEE Photon. Technol. Lett. (2)

A. Vert, S. Soloviev, J. Fronheiser, and P. Sandvik, “Solar-blind 4H-SiC single-photon avalanche diode operating in Geiger mode,” IEEE Photon. Technol. Lett. 20(18), 1587–1589 (2008).
[CrossRef]

B. Nabet, “A heterojunction metal-semiconductor-metal photodetector,” IEEE Photon. Technol. Lett. 9(2), 223–225 (1997).
[CrossRef]

J. Appl. Phys. (1)

J. W. Little, S. P. Svensson, W. A. Beck, A. C. Goldberg, S. W. Kennerly, T. Hongsmatip, M. Winn, and P. Uppal, “Thin active region, type II superlattice photodiode arrays: Single-pixel and focal plane array characterization,” J. Appl. Phys. 101(4), 044514 (2007).
[CrossRef]

J. Phys. Chem. B (1)

Y. Diamant, S. Chen, O. Melamed, and A. Zaban, “Core-shell nanoporous electrode for dye sensitized solar cells: the effect of the SrTiO3 shell on the electronic properties of the TiO2 core,” J. Phys. Chem. B 107(9), 1977–1981 (2003).
[CrossRef]

J. Phys. Condens. Matter (1)

I. P. Raevski, S. M. Maksimov, A. V. Fisenko, S. A. Prosandeyev, I. A. Osipenko, and P. F. Tarasenko, “Study of intrinsic point defects in oxides of the perovskite family: II. Experiment,” J. Phys. Condens. Matter 10(36), 8015–8032 (1998).
[CrossRef]

Nanotechnology (1)

K. M. Kim, B. J. Choi, M. H. Lee, G. H. Kim, S. J. Song, J. Y. Seok, J. H. Yoon, S. Han, and C. S. Hwang, “A detailed understanding of the electronic bipolar resistance switching behavior in Pt/TiO2/Pt structure,” Nanotechnology 22(25), 254010 (2011).
[CrossRef] [PubMed]

Opt. Express (3)

Opt. Lett. (2)

Other (2)

S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley, 1981), Chap. 13.

H. Xue, W. Chen, C. Liu, X. Kong, P. Qu, Z. Liu, J. Zhou, L. Shen, Z. Zhong, and S. Ruan, “Fabrication of TiO2 Schottky barrier diodes by RF magnetron sputtering,” in Proceedings of IEEE Conference on Nano/Micro Engineered and Molecular Systems (IEEE, Sanya, China, 2008), pp. 108–111.

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