Abstract

Centimeter-sized Te-doped GaSe ingots were grown from the charge compositions of GaSe with nominals 0.05, 0.1, 0.5, 1, and 3 mass% Te, which were identified as ɛ-GaSe:Te (0.01, 0.07, 0.38, 0.67, and 2.07 mass%) single crystals. The evolution of the absorption peaks of the phonon modes E’(2) (∼0.584 THz) and E”(2) (1.77 THz) on Te-doping in GaSe:Te crystals was studied by THz time-domain spectroscopy. This study proposes that the evolution of both E’(2) and E”(2) absorption peaks correlates well with the optical quality of Te-doped GaSe crystals, which was confirmed by experimental results on the efficiency of THz generation by optical rectification. Maximal intensity of the absorption peak of the rigid layer mode E’(2) is proposed as a criterion for identification of optimal Te-doping in GaSe crystals.

© 2012 OSA

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  1. V. G. Dmitriev, G. G. Gurzadyan, and D. N. Nikogosyan, Handbook of Nonlinear Optical Crystals, (Springer, Berlin, 1997), pp. 166–169.
  2. R. Huber, A. Brodschelm, F. Tauser, and A. Leitenstorfer, “Generation and field-resolved detection of femtosecond electromagnetic pulses tunable up to 41 THz,” Appl. Phys. Lett. 76, 3191–3193 (2000).
    [CrossRef]
  3. N. C. Fernelius, “Properties of gallium selenide single crystal,” Prog. Cryst. Growth Charact. 28, 275–353 (1994).
    [CrossRef]
  4. W. Y. Liang, “Optical anisotropy in GaSe,” J. Phys. C: Solid State Phys. 8, 1769–1768 (1975).
    [CrossRef]
  5. R. Le Toullec, N. Piccioli, M. Mejatty, and M. Balkanski, “Optical constants of ?-GaSe,” Nuovo Cimento 38B, 159–167 (1977).
  6. A. A. Tikhomirov, Yu. M. Andreev, G. V. Lanskii, O. V. Voevodina, and S. Yu. Sarkisov, “Doped GaSe nonlinear crystals,” Proc. SPIE. 6258, 64–72 (2006).
  7. K. R. Allakhverdiev, R. I. Guliev, E. Yu, Salaev, and V. V. Smirnov, “An investigation of linear and nonlinear optical properties of GaSxSe1–x crystals,” Sov. J. Quantum Electron. 12, 947–949 (1982).
    [CrossRef]
  8. D. R. Suhre, N. B. Singh, V. Balakrishna, N. C. Fernelius, and F. K. Hopkins, “Improved crystal quality and harmonic generation in GaSe doped with indium,” Opt. Lett. 22, 775–777 (1997).
    [CrossRef] [PubMed]
  9. N. B. Singh, D. R. Suhre, W. Rosch, R. Meyer, M. Marable, N. C. Fernelius, F. K. Hopkins, D. E. Zelmon, and R. Narayanan, “Modified GaSe crystals for mid-IR applications,” J. Cryst. Growth 198, 588–592 (1999).
    [CrossRef]
  10. Y. -K. Hsu, C. -W. Chen, J. Y. Huang, C. -L. Pan, J. -Y. Zhang, and C. -S. Chang, “Erbium doped GaSe crystal for mid-IR applications,” Opt. Express 14, 5484–5491 (2006).
    [CrossRef] [PubMed]
  11. Z. -S. Feng, Z. -H. Kang, F. -G. Wu, J. -Y. Gao, Y. Jiang, H. -Z. Zhang, Y. M. Andreev, G. V. Lanskii, V. V. Atuchin, and T. A. Gavrilova, “SHG in doped GaSe:In crystals,” Opt. Express 16, 9978–9985 (2008).
    [CrossRef] [PubMed]
  12. Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun. 284, 1677–1681 (2011).
    [CrossRef]
  13. Z. Rak, S. D. Mahanti, K. C. Mandal, and N. C. Fernelius, “Doping dependence of electronic and mechanical properties of GaSe1–xTex and Ga1–xInxSe from first principles,” Phys. Rev. B 82, 155203-1-10 (2010).
    [CrossRef]
  14. Y. J. Ding and W. Shi, “Widely tunable monochromatic THz sources based on phase-matched difference-frequency generation in nonlinear-optical crystals: A novel approach,” Laser Phys. 16, 562–570 (2006).
    [CrossRef]
  15. C. -W. Chen, T. -T. Tang, S. -H. Lin, J. Y. Huang, C. -S. Chang, P. -K. Chung, S. -T. Yen, and C. -L. Pan, “Optical properties and potential applications of ?-GaSe at terahertz frequencies,” J. Opt. Soc. Am. B 26, A58–A65 (2009).
    [CrossRef]
  16. Z. -W. Luo, X. -A. Gu, W. -C. Zhu, W. -C. Tang, Y. M. Andreev, G. Lanskii, A. Morozov, and V. Zuev, “Optical properties of GaSe:S crystals in terahertz frequency range,” Opt. Precision Eng. (in Chinese) 19, 354–359 (2011).
  17. K. C. Mandal, S. H. Kang, M. Choi, J. Chen, X. -C. Zhang, J. M. Schleicher, C. A. Schmuttenmaer, and N. C. Fernelius, “III–VI Chalcogenide semiconductor crystals for broadband tunable THz sources and sensors,” IEEE J. Sel. Top. Quant. Electron 14, 284–288 (2008).
    [CrossRef]
  18. C.-W. Chen, Y-K. Hsu, J. Y. Huang, C.-S. Chang, J.-Y. Zhang, and C.-L. Pan, “Generation properties of coherent infrared radiation in the optical absorption region of GaSe crystal,” Opt. Express 14, 10636–10644 (2006).
    [CrossRef] [PubMed]
  19. S. Y. Sarkisov, V. V. Atuchin, T. A. Gavrilova, V. N. Kruchinin, S. A. Bereznaya, Z. V. Korotchenko, O. P. Tolbanov, and A. I. Chernyshev, “Growth and optical parameters of GaSe:Te crystals,” Russ. Phys. J. 53, 346–352 (2010).
    [CrossRef]
  20. G. B. Abdullaev, K. R. Allakhverdiev, S. S. Babaev, E. Yu, Salaev, M. M. Tagyev, L. K. Vodopyanov, and L. V. Golubev, “Raman scattering from GaSe1–xTex,” Solid State Commun. 34, 125–128 (1980).
    [CrossRef]
  21. B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, and K. C. Mandal, “Terahertz studies of the dielectric response and second-order phonons in a GaSe crystal,” Appl. Phys. Lett. 87, 182104-1-3 (2005).
    [CrossRef]
  22. H. Yoshida, S. Nakashima, and A. Mitsuishi, “Phonon Raman spectra of layer compound GaSe,” Phys. Status Solidi B 59, 655–666 (1973).
    [CrossRef]
  23. I. Evtodiev, L. Leontie, M. Caraman, M. Stamate, and E. Arama, “Optical properties of p-GaSe single crystals doped with Te,” J. App. Phys. 105, 023524-1-5 (2009).
    [CrossRef]
  24. G. M. Mamedov, M. Karabulut, H. Ertap, O. Kodolbas, O. Oktu, and A. Bacoglu, “Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals,” J. Lumin. 129, 226–230 (2009).
    [CrossRef]
  25. E. A. Meneses, N. Jannuzzi, J. R. Freitas, and A. Gouskov, “Photoluminescence of layered GaSe1-xTex crystals,” Phys. Stat. Sol. (b) 78, K35–K38 (1976).
    [CrossRef]
  26. S. Shigetomi and T. Ikari, “Optical and electrical characteristics of p-GaSe doped with Te,” J. Appl. Phys. 95, 6480–6482 (2004).
    [CrossRef]

2011 (2)

Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun. 284, 1677–1681 (2011).
[CrossRef]

Z. -W. Luo, X. -A. Gu, W. -C. Zhu, W. -C. Tang, Y. M. Andreev, G. Lanskii, A. Morozov, and V. Zuev, “Optical properties of GaSe:S crystals in terahertz frequency range,” Opt. Precision Eng. (in Chinese) 19, 354–359 (2011).

2010 (2)

Z. Rak, S. D. Mahanti, K. C. Mandal, and N. C. Fernelius, “Doping dependence of electronic and mechanical properties of GaSe1–xTex and Ga1–xInxSe from first principles,” Phys. Rev. B 82, 155203-1-10 (2010).
[CrossRef]

S. Y. Sarkisov, V. V. Atuchin, T. A. Gavrilova, V. N. Kruchinin, S. A. Bereznaya, Z. V. Korotchenko, O. P. Tolbanov, and A. I. Chernyshev, “Growth and optical parameters of GaSe:Te crystals,” Russ. Phys. J. 53, 346–352 (2010).
[CrossRef]

2009 (3)

I. Evtodiev, L. Leontie, M. Caraman, M. Stamate, and E. Arama, “Optical properties of p-GaSe single crystals doped with Te,” J. App. Phys. 105, 023524-1-5 (2009).
[CrossRef]

G. M. Mamedov, M. Karabulut, H. Ertap, O. Kodolbas, O. Oktu, and A. Bacoglu, “Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals,” J. Lumin. 129, 226–230 (2009).
[CrossRef]

C. -W. Chen, T. -T. Tang, S. -H. Lin, J. Y. Huang, C. -S. Chang, P. -K. Chung, S. -T. Yen, and C. -L. Pan, “Optical properties and potential applications of ?-GaSe at terahertz frequencies,” J. Opt. Soc. Am. B 26, A58–A65 (2009).
[CrossRef]

2008 (2)

Z. -S. Feng, Z. -H. Kang, F. -G. Wu, J. -Y. Gao, Y. Jiang, H. -Z. Zhang, Y. M. Andreev, G. V. Lanskii, V. V. Atuchin, and T. A. Gavrilova, “SHG in doped GaSe:In crystals,” Opt. Express 16, 9978–9985 (2008).
[CrossRef] [PubMed]

K. C. Mandal, S. H. Kang, M. Choi, J. Chen, X. -C. Zhang, J. M. Schleicher, C. A. Schmuttenmaer, and N. C. Fernelius, “III–VI Chalcogenide semiconductor crystals for broadband tunable THz sources and sensors,” IEEE J. Sel. Top. Quant. Electron 14, 284–288 (2008).
[CrossRef]

2006 (4)

Y. J. Ding and W. Shi, “Widely tunable monochromatic THz sources based on phase-matched difference-frequency generation in nonlinear-optical crystals: A novel approach,” Laser Phys. 16, 562–570 (2006).
[CrossRef]

A. A. Tikhomirov, Yu. M. Andreev, G. V. Lanskii, O. V. Voevodina, and S. Yu. Sarkisov, “Doped GaSe nonlinear crystals,” Proc. SPIE. 6258, 64–72 (2006).

Y. -K. Hsu, C. -W. Chen, J. Y. Huang, C. -L. Pan, J. -Y. Zhang, and C. -S. Chang, “Erbium doped GaSe crystal for mid-IR applications,” Opt. Express 14, 5484–5491 (2006).
[CrossRef] [PubMed]

C.-W. Chen, Y-K. Hsu, J. Y. Huang, C.-S. Chang, J.-Y. Zhang, and C.-L. Pan, “Generation properties of coherent infrared radiation in the optical absorption region of GaSe crystal,” Opt. Express 14, 10636–10644 (2006).
[CrossRef] [PubMed]

2005 (1)

B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, and K. C. Mandal, “Terahertz studies of the dielectric response and second-order phonons in a GaSe crystal,” Appl. Phys. Lett. 87, 182104-1-3 (2005).
[CrossRef]

2004 (1)

S. Shigetomi and T. Ikari, “Optical and electrical characteristics of p-GaSe doped with Te,” J. Appl. Phys. 95, 6480–6482 (2004).
[CrossRef]

2000 (1)

R. Huber, A. Brodschelm, F. Tauser, and A. Leitenstorfer, “Generation and field-resolved detection of femtosecond electromagnetic pulses tunable up to 41 THz,” Appl. Phys. Lett. 76, 3191–3193 (2000).
[CrossRef]

1999 (1)

N. B. Singh, D. R. Suhre, W. Rosch, R. Meyer, M. Marable, N. C. Fernelius, F. K. Hopkins, D. E. Zelmon, and R. Narayanan, “Modified GaSe crystals for mid-IR applications,” J. Cryst. Growth 198, 588–592 (1999).
[CrossRef]

1997 (1)

1994 (1)

N. C. Fernelius, “Properties of gallium selenide single crystal,” Prog. Cryst. Growth Charact. 28, 275–353 (1994).
[CrossRef]

1982 (1)

K. R. Allakhverdiev, R. I. Guliev, E. Yu, Salaev, and V. V. Smirnov, “An investigation of linear and nonlinear optical properties of GaSxSe1–x crystals,” Sov. J. Quantum Electron. 12, 947–949 (1982).
[CrossRef]

1980 (1)

G. B. Abdullaev, K. R. Allakhverdiev, S. S. Babaev, E. Yu, Salaev, M. M. Tagyev, L. K. Vodopyanov, and L. V. Golubev, “Raman scattering from GaSe1–xTex,” Solid State Commun. 34, 125–128 (1980).
[CrossRef]

1977 (1)

R. Le Toullec, N. Piccioli, M. Mejatty, and M. Balkanski, “Optical constants of ?-GaSe,” Nuovo Cimento 38B, 159–167 (1977).

1976 (1)

E. A. Meneses, N. Jannuzzi, J. R. Freitas, and A. Gouskov, “Photoluminescence of layered GaSe1-xTex crystals,” Phys. Stat. Sol. (b) 78, K35–K38 (1976).
[CrossRef]

1975 (1)

W. Y. Liang, “Optical anisotropy in GaSe,” J. Phys. C: Solid State Phys. 8, 1769–1768 (1975).
[CrossRef]

1973 (1)

H. Yoshida, S. Nakashima, and A. Mitsuishi, “Phonon Raman spectra of layer compound GaSe,” Phys. Status Solidi B 59, 655–666 (1973).
[CrossRef]

Abdullaev, G. B.

G. B. Abdullaev, K. R. Allakhverdiev, S. S. Babaev, E. Yu, Salaev, M. M. Tagyev, L. K. Vodopyanov, and L. V. Golubev, “Raman scattering from GaSe1–xTex,” Solid State Commun. 34, 125–128 (1980).
[CrossRef]

Alfano, R. R.

B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, and K. C. Mandal, “Terahertz studies of the dielectric response and second-order phonons in a GaSe crystal,” Appl. Phys. Lett. 87, 182104-1-3 (2005).
[CrossRef]

Allakhverdiev, K. R.

K. R. Allakhverdiev, R. I. Guliev, E. Yu, Salaev, and V. V. Smirnov, “An investigation of linear and nonlinear optical properties of GaSxSe1–x crystals,” Sov. J. Quantum Electron. 12, 947–949 (1982).
[CrossRef]

G. B. Abdullaev, K. R. Allakhverdiev, S. S. Babaev, E. Yu, Salaev, M. M. Tagyev, L. K. Vodopyanov, and L. V. Golubev, “Raman scattering from GaSe1–xTex,” Solid State Commun. 34, 125–128 (1980).
[CrossRef]

Andreev, Y. M.

Z. -W. Luo, X. -A. Gu, W. -C. Zhu, W. -C. Tang, Y. M. Andreev, G. Lanskii, A. Morozov, and V. Zuev, “Optical properties of GaSe:S crystals in terahertz frequency range,” Opt. Precision Eng. (in Chinese) 19, 354–359 (2011).

Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun. 284, 1677–1681 (2011).
[CrossRef]

Z. -S. Feng, Z. -H. Kang, F. -G. Wu, J. -Y. Gao, Y. Jiang, H. -Z. Zhang, Y. M. Andreev, G. V. Lanskii, V. V. Atuchin, and T. A. Gavrilova, “SHG in doped GaSe:In crystals,” Opt. Express 16, 9978–9985 (2008).
[CrossRef] [PubMed]

Andreev, Yu. M.

A. A. Tikhomirov, Yu. M. Andreev, G. V. Lanskii, O. V. Voevodina, and S. Yu. Sarkisov, “Doped GaSe nonlinear crystals,” Proc. SPIE. 6258, 64–72 (2006).

Arama, E.

I. Evtodiev, L. Leontie, M. Caraman, M. Stamate, and E. Arama, “Optical properties of p-GaSe single crystals doped with Te,” J. App. Phys. 105, 023524-1-5 (2009).
[CrossRef]

Atuchin, V. V.

S. Y. Sarkisov, V. V. Atuchin, T. A. Gavrilova, V. N. Kruchinin, S. A. Bereznaya, Z. V. Korotchenko, O. P. Tolbanov, and A. I. Chernyshev, “Growth and optical parameters of GaSe:Te crystals,” Russ. Phys. J. 53, 346–352 (2010).
[CrossRef]

Z. -S. Feng, Z. -H. Kang, F. -G. Wu, J. -Y. Gao, Y. Jiang, H. -Z. Zhang, Y. M. Andreev, G. V. Lanskii, V. V. Atuchin, and T. A. Gavrilova, “SHG in doped GaSe:In crystals,” Opt. Express 16, 9978–9985 (2008).
[CrossRef] [PubMed]

Babaev, S. S.

G. B. Abdullaev, K. R. Allakhverdiev, S. S. Babaev, E. Yu, Salaev, M. M. Tagyev, L. K. Vodopyanov, and L. V. Golubev, “Raman scattering from GaSe1–xTex,” Solid State Commun. 34, 125–128 (1980).
[CrossRef]

Bacoglu, A.

G. M. Mamedov, M. Karabulut, H. Ertap, O. Kodolbas, O. Oktu, and A. Bacoglu, “Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals,” J. Lumin. 129, 226–230 (2009).
[CrossRef]

Balakrishna, V.

Balkanski, M.

R. Le Toullec, N. Piccioli, M. Mejatty, and M. Balkanski, “Optical constants of ?-GaSe,” Nuovo Cimento 38B, 159–167 (1977).

Bereznaya, S. A.

S. Y. Sarkisov, V. V. Atuchin, T. A. Gavrilova, V. N. Kruchinin, S. A. Bereznaya, Z. V. Korotchenko, O. P. Tolbanov, and A. I. Chernyshev, “Growth and optical parameters of GaSe:Te crystals,” Russ. Phys. J. 53, 346–352 (2010).
[CrossRef]

Brodschelm, A.

R. Huber, A. Brodschelm, F. Tauser, and A. Leitenstorfer, “Generation and field-resolved detection of femtosecond electromagnetic pulses tunable up to 41 THz,” Appl. Phys. Lett. 76, 3191–3193 (2000).
[CrossRef]

Caraman, M.

I. Evtodiev, L. Leontie, M. Caraman, M. Stamate, and E. Arama, “Optical properties of p-GaSe single crystals doped with Te,” J. App. Phys. 105, 023524-1-5 (2009).
[CrossRef]

Chang, C. -S.

Chang, C.-S.

Chen, C. -W.

Chen, C.-W.

Chen, J.

K. C. Mandal, S. H. Kang, M. Choi, J. Chen, X. -C. Zhang, J. M. Schleicher, C. A. Schmuttenmaer, and N. C. Fernelius, “III–VI Chalcogenide semiconductor crystals for broadband tunable THz sources and sensors,” IEEE J. Sel. Top. Quant. Electron 14, 284–288 (2008).
[CrossRef]

Chernyshev, A. I.

S. Y. Sarkisov, V. V. Atuchin, T. A. Gavrilova, V. N. Kruchinin, S. A. Bereznaya, Z. V. Korotchenko, O. P. Tolbanov, and A. I. Chernyshev, “Growth and optical parameters of GaSe:Te crystals,” Russ. Phys. J. 53, 346–352 (2010).
[CrossRef]

Choi, M.

K. C. Mandal, S. H. Kang, M. Choi, J. Chen, X. -C. Zhang, J. M. Schleicher, C. A. Schmuttenmaer, and N. C. Fernelius, “III–VI Chalcogenide semiconductor crystals for broadband tunable THz sources and sensors,” IEEE J. Sel. Top. Quant. Electron 14, 284–288 (2008).
[CrossRef]

Chung, P. -K.

Ding, Y. J.

Y. J. Ding and W. Shi, “Widely tunable monochromatic THz sources based on phase-matched difference-frequency generation in nonlinear-optical crystals: A novel approach,” Laser Phys. 16, 562–570 (2006).
[CrossRef]

Dmitriev, V. G.

V. G. Dmitriev, G. G. Gurzadyan, and D. N. Nikogosyan, Handbook of Nonlinear Optical Crystals, (Springer, Berlin, 1997), pp. 166–169.

Ertap, H.

G. M. Mamedov, M. Karabulut, H. Ertap, O. Kodolbas, O. Oktu, and A. Bacoglu, “Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals,” J. Lumin. 129, 226–230 (2009).
[CrossRef]

Evtodiev, I.

I. Evtodiev, L. Leontie, M. Caraman, M. Stamate, and E. Arama, “Optical properties of p-GaSe single crystals doped with Te,” J. App. Phys. 105, 023524-1-5 (2009).
[CrossRef]

Feng, Z. -S.

Fernelius, N. C.

Z. Rak, S. D. Mahanti, K. C. Mandal, and N. C. Fernelius, “Doping dependence of electronic and mechanical properties of GaSe1–xTex and Ga1–xInxSe from first principles,” Phys. Rev. B 82, 155203-1-10 (2010).
[CrossRef]

K. C. Mandal, S. H. Kang, M. Choi, J. Chen, X. -C. Zhang, J. M. Schleicher, C. A. Schmuttenmaer, and N. C. Fernelius, “III–VI Chalcogenide semiconductor crystals for broadband tunable THz sources and sensors,” IEEE J. Sel. Top. Quant. Electron 14, 284–288 (2008).
[CrossRef]

N. B. Singh, D. R. Suhre, W. Rosch, R. Meyer, M. Marable, N. C. Fernelius, F. K. Hopkins, D. E. Zelmon, and R. Narayanan, “Modified GaSe crystals for mid-IR applications,” J. Cryst. Growth 198, 588–592 (1999).
[CrossRef]

D. R. Suhre, N. B. Singh, V. Balakrishna, N. C. Fernelius, and F. K. Hopkins, “Improved crystal quality and harmonic generation in GaSe doped with indium,” Opt. Lett. 22, 775–777 (1997).
[CrossRef] [PubMed]

N. C. Fernelius, “Properties of gallium selenide single crystal,” Prog. Cryst. Growth Charact. 28, 275–353 (1994).
[CrossRef]

Freitas, J. R.

E. A. Meneses, N. Jannuzzi, J. R. Freitas, and A. Gouskov, “Photoluminescence of layered GaSe1-xTex crystals,” Phys. Stat. Sol. (b) 78, K35–K38 (1976).
[CrossRef]

Gao, J. -Y.

Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun. 284, 1677–1681 (2011).
[CrossRef]

Z. -S. Feng, Z. -H. Kang, F. -G. Wu, J. -Y. Gao, Y. Jiang, H. -Z. Zhang, Y. M. Andreev, G. V. Lanskii, V. V. Atuchin, and T. A. Gavrilova, “SHG in doped GaSe:In crystals,” Opt. Express 16, 9978–9985 (2008).
[CrossRef] [PubMed]

Gavrilova, T. A.

S. Y. Sarkisov, V. V. Atuchin, T. A. Gavrilova, V. N. Kruchinin, S. A. Bereznaya, Z. V. Korotchenko, O. P. Tolbanov, and A. I. Chernyshev, “Growth and optical parameters of GaSe:Te crystals,” Russ. Phys. J. 53, 346–352 (2010).
[CrossRef]

Z. -S. Feng, Z. -H. Kang, F. -G. Wu, J. -Y. Gao, Y. Jiang, H. -Z. Zhang, Y. M. Andreev, G. V. Lanskii, V. V. Atuchin, and T. A. Gavrilova, “SHG in doped GaSe:In crystals,” Opt. Express 16, 9978–9985 (2008).
[CrossRef] [PubMed]

Golubev, L. V.

G. B. Abdullaev, K. R. Allakhverdiev, S. S. Babaev, E. Yu, Salaev, M. M. Tagyev, L. K. Vodopyanov, and L. V. Golubev, “Raman scattering from GaSe1–xTex,” Solid State Commun. 34, 125–128 (1980).
[CrossRef]

Gouskov, A.

E. A. Meneses, N. Jannuzzi, J. R. Freitas, and A. Gouskov, “Photoluminescence of layered GaSe1-xTex crystals,” Phys. Stat. Sol. (b) 78, K35–K38 (1976).
[CrossRef]

Gu, X. -A.

Z. -W. Luo, X. -A. Gu, W. -C. Zhu, W. -C. Tang, Y. M. Andreev, G. Lanskii, A. Morozov, and V. Zuev, “Optical properties of GaSe:S crystals in terahertz frequency range,” Opt. Precision Eng. (in Chinese) 19, 354–359 (2011).

Guliev, R. I.

K. R. Allakhverdiev, R. I. Guliev, E. Yu, Salaev, and V. V. Smirnov, “An investigation of linear and nonlinear optical properties of GaSxSe1–x crystals,” Sov. J. Quantum Electron. 12, 947–949 (1982).
[CrossRef]

Gurzadyan, G. G.

V. G. Dmitriev, G. G. Gurzadyan, and D. N. Nikogosyan, Handbook of Nonlinear Optical Crystals, (Springer, Berlin, 1997), pp. 166–169.

Hopkins, F. K.

N. B. Singh, D. R. Suhre, W. Rosch, R. Meyer, M. Marable, N. C. Fernelius, F. K. Hopkins, D. E. Zelmon, and R. Narayanan, “Modified GaSe crystals for mid-IR applications,” J. Cryst. Growth 198, 588–592 (1999).
[CrossRef]

D. R. Suhre, N. B. Singh, V. Balakrishna, N. C. Fernelius, and F. K. Hopkins, “Improved crystal quality and harmonic generation in GaSe doped with indium,” Opt. Lett. 22, 775–777 (1997).
[CrossRef] [PubMed]

Hsu, Y. -K.

Hsu, Y-K.

Huang, J. Y.

Huber, R.

R. Huber, A. Brodschelm, F. Tauser, and A. Leitenstorfer, “Generation and field-resolved detection of femtosecond electromagnetic pulses tunable up to 41 THz,” Appl. Phys. Lett. 76, 3191–3193 (2000).
[CrossRef]

Ikari, T.

S. Shigetomi and T. Ikari, “Optical and electrical characteristics of p-GaSe doped with Te,” J. Appl. Phys. 95, 6480–6482 (2004).
[CrossRef]

Jannuzzi, N.

E. A. Meneses, N. Jannuzzi, J. R. Freitas, and A. Gouskov, “Photoluminescence of layered GaSe1-xTex crystals,” Phys. Stat. Sol. (b) 78, K35–K38 (1976).
[CrossRef]

Jiang, Y.

Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun. 284, 1677–1681 (2011).
[CrossRef]

Z. -S. Feng, Z. -H. Kang, F. -G. Wu, J. -Y. Gao, Y. Jiang, H. -Z. Zhang, Y. M. Andreev, G. V. Lanskii, V. V. Atuchin, and T. A. Gavrilova, “SHG in doped GaSe:In crystals,” Opt. Express 16, 9978–9985 (2008).
[CrossRef] [PubMed]

Kang, S. H.

K. C. Mandal, S. H. Kang, M. Choi, J. Chen, X. -C. Zhang, J. M. Schleicher, C. A. Schmuttenmaer, and N. C. Fernelius, “III–VI Chalcogenide semiconductor crystals for broadband tunable THz sources and sensors,” IEEE J. Sel. Top. Quant. Electron 14, 284–288 (2008).
[CrossRef]

Kang, Z. -H.

Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun. 284, 1677–1681 (2011).
[CrossRef]

Z. -S. Feng, Z. -H. Kang, F. -G. Wu, J. -Y. Gao, Y. Jiang, H. -Z. Zhang, Y. M. Andreev, G. V. Lanskii, V. V. Atuchin, and T. A. Gavrilova, “SHG in doped GaSe:In crystals,” Opt. Express 16, 9978–9985 (2008).
[CrossRef] [PubMed]

Karabulut, M.

G. M. Mamedov, M. Karabulut, H. Ertap, O. Kodolbas, O. Oktu, and A. Bacoglu, “Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals,” J. Lumin. 129, 226–230 (2009).
[CrossRef]

Kartazayev, V.

B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, and K. C. Mandal, “Terahertz studies of the dielectric response and second-order phonons in a GaSe crystal,” Appl. Phys. Lett. 87, 182104-1-3 (2005).
[CrossRef]

Kodolbas, O.

G. M. Mamedov, M. Karabulut, H. Ertap, O. Kodolbas, O. Oktu, and A. Bacoglu, “Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals,” J. Lumin. 129, 226–230 (2009).
[CrossRef]

Kokh, K.

Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun. 284, 1677–1681 (2011).
[CrossRef]

Korotchenko, Z. V.

S. Y. Sarkisov, V. V. Atuchin, T. A. Gavrilova, V. N. Kruchinin, S. A. Bereznaya, Z. V. Korotchenko, O. P. Tolbanov, and A. I. Chernyshev, “Growth and optical parameters of GaSe:Te crystals,” Russ. Phys. J. 53, 346–352 (2010).
[CrossRef]

Kruchinin, V. N.

S. Y. Sarkisov, V. V. Atuchin, T. A. Gavrilova, V. N. Kruchinin, S. A. Bereznaya, Z. V. Korotchenko, O. P. Tolbanov, and A. I. Chernyshev, “Growth and optical parameters of GaSe:Te crystals,” Russ. Phys. J. 53, 346–352 (2010).
[CrossRef]

Lanskii, G.

Z. -W. Luo, X. -A. Gu, W. -C. Zhu, W. -C. Tang, Y. M. Andreev, G. Lanskii, A. Morozov, and V. Zuev, “Optical properties of GaSe:S crystals in terahertz frequency range,” Opt. Precision Eng. (in Chinese) 19, 354–359 (2011).

Lanskii, G. V.

Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun. 284, 1677–1681 (2011).
[CrossRef]

Z. -S. Feng, Z. -H. Kang, F. -G. Wu, J. -Y. Gao, Y. Jiang, H. -Z. Zhang, Y. M. Andreev, G. V. Lanskii, V. V. Atuchin, and T. A. Gavrilova, “SHG in doped GaSe:In crystals,” Opt. Express 16, 9978–9985 (2008).
[CrossRef] [PubMed]

A. A. Tikhomirov, Yu. M. Andreev, G. V. Lanskii, O. V. Voevodina, and S. Yu. Sarkisov, “Doped GaSe nonlinear crystals,” Proc. SPIE. 6258, 64–72 (2006).

Le Toullec, R.

R. Le Toullec, N. Piccioli, M. Mejatty, and M. Balkanski, “Optical constants of ?-GaSe,” Nuovo Cimento 38B, 159–167 (1977).

Leitenstorfer, A.

R. Huber, A. Brodschelm, F. Tauser, and A. Leitenstorfer, “Generation and field-resolved detection of femtosecond electromagnetic pulses tunable up to 41 THz,” Appl. Phys. Lett. 76, 3191–3193 (2000).
[CrossRef]

Leontie, L.

I. Evtodiev, L. Leontie, M. Caraman, M. Stamate, and E. Arama, “Optical properties of p-GaSe single crystals doped with Te,” J. App. Phys. 105, 023524-1-5 (2009).
[CrossRef]

Liang, W. Y.

W. Y. Liang, “Optical anisotropy in GaSe,” J. Phys. C: Solid State Phys. 8, 1769–1768 (1975).
[CrossRef]

Lin, S. -H.

Luo, Z. -W.

Z. -W. Luo, X. -A. Gu, W. -C. Zhu, W. -C. Tang, Y. M. Andreev, G. Lanskii, A. Morozov, and V. Zuev, “Optical properties of GaSe:S crystals in terahertz frequency range,” Opt. Precision Eng. (in Chinese) 19, 354–359 (2011).

Mahanti, S. D.

Z. Rak, S. D. Mahanti, K. C. Mandal, and N. C. Fernelius, “Doping dependence of electronic and mechanical properties of GaSe1–xTex and Ga1–xInxSe from first principles,” Phys. Rev. B 82, 155203-1-10 (2010).
[CrossRef]

Mamedov, G. M.

G. M. Mamedov, M. Karabulut, H. Ertap, O. Kodolbas, O. Oktu, and A. Bacoglu, “Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals,” J. Lumin. 129, 226–230 (2009).
[CrossRef]

Mandal, K. C.

Z. Rak, S. D. Mahanti, K. C. Mandal, and N. C. Fernelius, “Doping dependence of electronic and mechanical properties of GaSe1–xTex and Ga1–xInxSe from first principles,” Phys. Rev. B 82, 155203-1-10 (2010).
[CrossRef]

K. C. Mandal, S. H. Kang, M. Choi, J. Chen, X. -C. Zhang, J. M. Schleicher, C. A. Schmuttenmaer, and N. C. Fernelius, “III–VI Chalcogenide semiconductor crystals for broadband tunable THz sources and sensors,” IEEE J. Sel. Top. Quant. Electron 14, 284–288 (2008).
[CrossRef]

B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, and K. C. Mandal, “Terahertz studies of the dielectric response and second-order phonons in a GaSe crystal,” Appl. Phys. Lett. 87, 182104-1-3 (2005).
[CrossRef]

Marable, M.

N. B. Singh, D. R. Suhre, W. Rosch, R. Meyer, M. Marable, N. C. Fernelius, F. K. Hopkins, D. E. Zelmon, and R. Narayanan, “Modified GaSe crystals for mid-IR applications,” J. Cryst. Growth 198, 588–592 (1999).
[CrossRef]

Mejatty, M.

R. Le Toullec, N. Piccioli, M. Mejatty, and M. Balkanski, “Optical constants of ?-GaSe,” Nuovo Cimento 38B, 159–167 (1977).

Meneses, E. A.

E. A. Meneses, N. Jannuzzi, J. R. Freitas, and A. Gouskov, “Photoluminescence of layered GaSe1-xTex crystals,” Phys. Stat. Sol. (b) 78, K35–K38 (1976).
[CrossRef]

Meyer, R.

N. B. Singh, D. R. Suhre, W. Rosch, R. Meyer, M. Marable, N. C. Fernelius, F. K. Hopkins, D. E. Zelmon, and R. Narayanan, “Modified GaSe crystals for mid-IR applications,” J. Cryst. Growth 198, 588–592 (1999).
[CrossRef]

Mitsuishi, A.

H. Yoshida, S. Nakashima, and A. Mitsuishi, “Phonon Raman spectra of layer compound GaSe,” Phys. Status Solidi B 59, 655–666 (1973).
[CrossRef]

Morozov, A.

Z. -W. Luo, X. -A. Gu, W. -C. Zhu, W. -C. Tang, Y. M. Andreev, G. Lanskii, A. Morozov, and V. Zuev, “Optical properties of GaSe:S crystals in terahertz frequency range,” Opt. Precision Eng. (in Chinese) 19, 354–359 (2011).

Morozov, A. N.

Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun. 284, 1677–1681 (2011).
[CrossRef]

Nakashima, S.

H. Yoshida, S. Nakashima, and A. Mitsuishi, “Phonon Raman spectra of layer compound GaSe,” Phys. Status Solidi B 59, 655–666 (1973).
[CrossRef]

Narayanan, R.

N. B. Singh, D. R. Suhre, W. Rosch, R. Meyer, M. Marable, N. C. Fernelius, F. K. Hopkins, D. E. Zelmon, and R. Narayanan, “Modified GaSe crystals for mid-IR applications,” J. Cryst. Growth 198, 588–592 (1999).
[CrossRef]

Nikogosyan, D. N.

V. G. Dmitriev, G. G. Gurzadyan, and D. N. Nikogosyan, Handbook of Nonlinear Optical Crystals, (Springer, Berlin, 1997), pp. 166–169.

Oktu, O.

G. M. Mamedov, M. Karabulut, H. Ertap, O. Kodolbas, O. Oktu, and A. Bacoglu, “Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals,” J. Lumin. 129, 226–230 (2009).
[CrossRef]

Pan, C. -L.

Pan, C.-L.

Piccioli, N.

R. Le Toullec, N. Piccioli, M. Mejatty, and M. Balkanski, “Optical constants of ?-GaSe,” Nuovo Cimento 38B, 159–167 (1977).

Qu, L. -L.

Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun. 284, 1677–1681 (2011).
[CrossRef]

Rak, Z.

Z. Rak, S. D. Mahanti, K. C. Mandal, and N. C. Fernelius, “Doping dependence of electronic and mechanical properties of GaSe1–xTex and Ga1–xInxSe from first principles,” Phys. Rev. B 82, 155203-1-10 (2010).
[CrossRef]

Rosch, W.

N. B. Singh, D. R. Suhre, W. Rosch, R. Meyer, M. Marable, N. C. Fernelius, F. K. Hopkins, D. E. Zelmon, and R. Narayanan, “Modified GaSe crystals for mid-IR applications,” J. Cryst. Growth 198, 588–592 (1999).
[CrossRef]

Salaev,

K. R. Allakhverdiev, R. I. Guliev, E. Yu, Salaev, and V. V. Smirnov, “An investigation of linear and nonlinear optical properties of GaSxSe1–x crystals,” Sov. J. Quantum Electron. 12, 947–949 (1982).
[CrossRef]

G. B. Abdullaev, K. R. Allakhverdiev, S. S. Babaev, E. Yu, Salaev, M. M. Tagyev, L. K. Vodopyanov, and L. V. Golubev, “Raman scattering from GaSe1–xTex,” Solid State Commun. 34, 125–128 (1980).
[CrossRef]

Sarkisov, S. Y.

S. Y. Sarkisov, V. V. Atuchin, T. A. Gavrilova, V. N. Kruchinin, S. A. Bereznaya, Z. V. Korotchenko, O. P. Tolbanov, and A. I. Chernyshev, “Growth and optical parameters of GaSe:Te crystals,” Russ. Phys. J. 53, 346–352 (2010).
[CrossRef]

Sarkisov, S. Yu.

A. A. Tikhomirov, Yu. M. Andreev, G. V. Lanskii, O. V. Voevodina, and S. Yu. Sarkisov, “Doped GaSe nonlinear crystals,” Proc. SPIE. 6258, 64–72 (2006).

Schleicher, J. M.

K. C. Mandal, S. H. Kang, M. Choi, J. Chen, X. -C. Zhang, J. M. Schleicher, C. A. Schmuttenmaer, and N. C. Fernelius, “III–VI Chalcogenide semiconductor crystals for broadband tunable THz sources and sensors,” IEEE J. Sel. Top. Quant. Electron 14, 284–288 (2008).
[CrossRef]

Schmuttenmaer, C. A.

K. C. Mandal, S. H. Kang, M. Choi, J. Chen, X. -C. Zhang, J. M. Schleicher, C. A. Schmuttenmaer, and N. C. Fernelius, “III–VI Chalcogenide semiconductor crystals for broadband tunable THz sources and sensors,” IEEE J. Sel. Top. Quant. Electron 14, 284–288 (2008).
[CrossRef]

Shaiduko, A. V.

Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun. 284, 1677–1681 (2011).
[CrossRef]

Shi, W.

Y. J. Ding and W. Shi, “Widely tunable monochromatic THz sources based on phase-matched difference-frequency generation in nonlinear-optical crystals: A novel approach,” Laser Phys. 16, 562–570 (2006).
[CrossRef]

Shigetomi, S.

S. Shigetomi and T. Ikari, “Optical and electrical characteristics of p-GaSe doped with Te,” J. Appl. Phys. 95, 6480–6482 (2004).
[CrossRef]

Singh, N. B.

N. B. Singh, D. R. Suhre, W. Rosch, R. Meyer, M. Marable, N. C. Fernelius, F. K. Hopkins, D. E. Zelmon, and R. Narayanan, “Modified GaSe crystals for mid-IR applications,” J. Cryst. Growth 198, 588–592 (1999).
[CrossRef]

D. R. Suhre, N. B. Singh, V. Balakrishna, N. C. Fernelius, and F. K. Hopkins, “Improved crystal quality and harmonic generation in GaSe doped with indium,” Opt. Lett. 22, 775–777 (1997).
[CrossRef] [PubMed]

Smirnov, V. V.

K. R. Allakhverdiev, R. I. Guliev, E. Yu, Salaev, and V. V. Smirnov, “An investigation of linear and nonlinear optical properties of GaSxSe1–x crystals,” Sov. J. Quantum Electron. 12, 947–949 (1982).
[CrossRef]

Stamate, M.

I. Evtodiev, L. Leontie, M. Caraman, M. Stamate, and E. Arama, “Optical properties of p-GaSe single crystals doped with Te,” J. App. Phys. 105, 023524-1-5 (2009).
[CrossRef]

Suhre, D. R.

N. B. Singh, D. R. Suhre, W. Rosch, R. Meyer, M. Marable, N. C. Fernelius, F. K. Hopkins, D. E. Zelmon, and R. Narayanan, “Modified GaSe crystals for mid-IR applications,” J. Cryst. Growth 198, 588–592 (1999).
[CrossRef]

D. R. Suhre, N. B. Singh, V. Balakrishna, N. C. Fernelius, and F. K. Hopkins, “Improved crystal quality and harmonic generation in GaSe doped with indium,” Opt. Lett. 22, 775–777 (1997).
[CrossRef] [PubMed]

Tagyev, M. M.

G. B. Abdullaev, K. R. Allakhverdiev, S. S. Babaev, E. Yu, Salaev, M. M. Tagyev, L. K. Vodopyanov, and L. V. Golubev, “Raman scattering from GaSe1–xTex,” Solid State Commun. 34, 125–128 (1980).
[CrossRef]

Tang, T. -T.

Tang, W. -C.

Z. -W. Luo, X. -A. Gu, W. -C. Zhu, W. -C. Tang, Y. M. Andreev, G. Lanskii, A. Morozov, and V. Zuev, “Optical properties of GaSe:S crystals in terahertz frequency range,” Opt. Precision Eng. (in Chinese) 19, 354–359 (2011).

Tauser, F.

R. Huber, A. Brodschelm, F. Tauser, and A. Leitenstorfer, “Generation and field-resolved detection of femtosecond electromagnetic pulses tunable up to 41 THz,” Appl. Phys. Lett. 76, 3191–3193 (2000).
[CrossRef]

Tikhomirov, A. A.

A. A. Tikhomirov, Yu. M. Andreev, G. V. Lanskii, O. V. Voevodina, and S. Yu. Sarkisov, “Doped GaSe nonlinear crystals,” Proc. SPIE. 6258, 64–72 (2006).

Tolbanov, O. P.

S. Y. Sarkisov, V. V. Atuchin, T. A. Gavrilova, V. N. Kruchinin, S. A. Bereznaya, Z. V. Korotchenko, O. P. Tolbanov, and A. I. Chernyshev, “Growth and optical parameters of GaSe:Te crystals,” Russ. Phys. J. 53, 346–352 (2010).
[CrossRef]

Vinnik, E.

Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun. 284, 1677–1681 (2011).
[CrossRef]

Vodopyanov, L. K.

G. B. Abdullaev, K. R. Allakhverdiev, S. S. Babaev, E. Yu, Salaev, M. M. Tagyev, L. K. Vodopyanov, and L. V. Golubev, “Raman scattering from GaSe1–xTex,” Solid State Commun. 34, 125–128 (1980).
[CrossRef]

Voevodina, O. V.

A. A. Tikhomirov, Yu. M. Andreev, G. V. Lanskii, O. V. Voevodina, and S. Yu. Sarkisov, “Doped GaSe nonlinear crystals,” Proc. SPIE. 6258, 64–72 (2006).

Wang, R.

Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun. 284, 1677–1681 (2011).
[CrossRef]

Wu, F. -G.

Yen, S. -T.

Yoshida, H.

H. Yoshida, S. Nakashima, and A. Mitsuishi, “Phonon Raman spectra of layer compound GaSe,” Phys. Status Solidi B 59, 655–666 (1973).
[CrossRef]

Yu, B. L.

B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, and K. C. Mandal, “Terahertz studies of the dielectric response and second-order phonons in a GaSe crystal,” Appl. Phys. Lett. 87, 182104-1-3 (2005).
[CrossRef]

Yu, E.

K. R. Allakhverdiev, R. I. Guliev, E. Yu, Salaev, and V. V. Smirnov, “An investigation of linear and nonlinear optical properties of GaSxSe1–x crystals,” Sov. J. Quantum Electron. 12, 947–949 (1982).
[CrossRef]

G. B. Abdullaev, K. R. Allakhverdiev, S. S. Babaev, E. Yu, Salaev, M. M. Tagyev, L. K. Vodopyanov, and L. V. Golubev, “Raman scattering from GaSe1–xTex,” Solid State Commun. 34, 125–128 (1980).
[CrossRef]

Zelmon, D. E.

N. B. Singh, D. R. Suhre, W. Rosch, R. Meyer, M. Marable, N. C. Fernelius, F. K. Hopkins, D. E. Zelmon, and R. Narayanan, “Modified GaSe crystals for mid-IR applications,” J. Cryst. Growth 198, 588–592 (1999).
[CrossRef]

Zeng, F.

B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, and K. C. Mandal, “Terahertz studies of the dielectric response and second-order phonons in a GaSe crystal,” Appl. Phys. Lett. 87, 182104-1-3 (2005).
[CrossRef]

Zhang, H. -Z.

Zhang, J. -Y.

Zhang, J.-Y.

Zhang, X. -C.

K. C. Mandal, S. H. Kang, M. Choi, J. Chen, X. -C. Zhang, J. M. Schleicher, C. A. Schmuttenmaer, and N. C. Fernelius, “III–VI Chalcogenide semiconductor crystals for broadband tunable THz sources and sensors,” IEEE J. Sel. Top. Quant. Electron 14, 284–288 (2008).
[CrossRef]

Zhang, Y. -F.

Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun. 284, 1677–1681 (2011).
[CrossRef]

Zhu, W. -C.

Z. -W. Luo, X. -A. Gu, W. -C. Zhu, W. -C. Tang, Y. M. Andreev, G. Lanskii, A. Morozov, and V. Zuev, “Optical properties of GaSe:S crystals in terahertz frequency range,” Opt. Precision Eng. (in Chinese) 19, 354–359 (2011).

Zuev, V.

Z. -W. Luo, X. -A. Gu, W. -C. Zhu, W. -C. Tang, Y. M. Andreev, G. Lanskii, A. Morozov, and V. Zuev, “Optical properties of GaSe:S crystals in terahertz frequency range,” Opt. Precision Eng. (in Chinese) 19, 354–359 (2011).

Zuev, V. V.

Y. -F. Zhang, R. Wang, Z. -H. Kang, L. -L. Qu, Y. Jiang, J. -Y. Gao, Y. M. Andreev, G. V. Lanskii, K. Kokh, A. N. Morozov, A. V. Shaiduko, E. Vinnik, and V. V. Zuev, “AgGaS2- and Al-doped GaSe for IR Application,” Opt. Commun. 284, 1677–1681 (2011).
[CrossRef]

Appl. Phys. Lett. (2)

R. Huber, A. Brodschelm, F. Tauser, and A. Leitenstorfer, “Generation and field-resolved detection of femtosecond electromagnetic pulses tunable up to 41 THz,” Appl. Phys. Lett. 76, 3191–3193 (2000).
[CrossRef]

B. L. Yu, F. Zeng, V. Kartazayev, R. R. Alfano, and K. C. Mandal, “Terahertz studies of the dielectric response and second-order phonons in a GaSe crystal,” Appl. Phys. Lett. 87, 182104-1-3 (2005).
[CrossRef]

IEEE J. Sel. Top. Quant. Electron (1)

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Figures (4)

Fig. 1
Fig. 1

Confocal microscopic images of (a) pure GaSe, (b) GaSe:Te (0.01 mass%), (c) GaSe:Te (0.07 mass%), (d) GaSe:Te (0.38 mass%), (e) GaSe:Te (0.67 mass%) and (f) GaSe:Te (2.07 mass%) crystals.

Fig. 2
Fig. 2

IR transmission spectra of various Te-doped GaSe crystals.

Fig. 3
Fig. 3

O-wave real part of conductivity spectra in GaSe:Te crystals. Points: experimental data. Solid lines: fitting by Eq. (3). The inset in the upper figure shows the vibrational displacements of the rigid layer mode E’(2) and two-atom sub-layer mode E”(2) in a primitive layer.

Fig. 4
Fig. 4

(a) Temporal waveform of THz radiation on a 0.30-mm GaSe:Te (0.07 mass%) crystal. The inset illustrates the power spectra from the fast Fourier transform of the temporal waveform. (b) The central frequency and the THz generation power at various Te concentrations.

Tables (1)

Tables Icon

Table 1 Fitting parameters for Eq. (3).

Equations (3)

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ε ˜ ( ω ) = ε ( ) + j = 1 J S j ω T O j 2 ω T O j 2 ω 2 i Γ j ω ω p 2 ω ( ω + i < τ > 1 ) ,
ε ˜ ( ω ) = ( n ( ω ) + i κ ( ω ) ) 2 = ε ( ) + i σ ^ ω ε 0 ,
σ r ( ω ) = ε 0 ω p 2 < τ > 1 [ ω 2 + < τ > 2 ] + j = 1 J ε 0 S j Γ j ω T O j 2 ω 2 ( ω T O j 2 ω 2 ) 2 + Γ j 2 ω 2 .

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