Abstract

We demonstrate a carrier-depletion Mach-Zehnder silicon optical modulator, which is compatible with CMOS fabrication process and works well at a low driving voltage. This is achieved by the optimization of the coplanar waveguide electrode to reduce the electrical signal transmission loss. At the same time, the velocity and impedance matching are both considered. The 12.5 Gbit/s data transmission experiment of the fabricated device with a 2-mm-long phase shifter is performed. The driving voltages with the swing amplitudes of 1 V and 2 V and the reverse bias voltages of 0.5 V and 0.8 V are applied to the device, respectively. The corresponding extinction ratios are 7.67 and 12.79 dB.

© 2012 OSA

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S. Assefa, F. N. Xia, and Y. A. Vlasov, “Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects,” Nature 464(7285), 80–84 (2010).
[CrossRef] [PubMed]

G. T. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photonics 4(8), 518–526 (2010).
[CrossRef]

N. N. Feng, S. Liao, D. Z. Feng, P. Dong, D. Zheng, H. Liang, R. Shafiiha, G. Li, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High speed carrier-depletion modulators with 1.4V-cm V(π)L integrated on 0.25microm silicon-on-insulator waveguides,” Opt. Express 18(8), 7994–7999 (2010).
[CrossRef] [PubMed]

2009 (1)

2008 (3)

2007 (3)

2006 (1)

2005 (2)

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature 435(7040), 325–327 (2005).
[CrossRef] [PubMed]

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005).
[CrossRef] [PubMed]

2004 (1)

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature 427(6975), 615–618 (2004).
[CrossRef] [PubMed]

1987 (1)

R. Soref and B. Bennett, “Electrooptical effects in silicon,” IEEE J. Quantum Electron. 23(1), 123–129 (1987).
[CrossRef]

Ahn, D.

Asghari, M.

Assefa, S.

S. Assefa, F. N. Xia, and Y. A. Vlasov, “Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects,” Nature 464(7285), 80–84 (2010).
[CrossRef] [PubMed]

Beals, M.

Beling, A.

Y. Kang, H. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y. Kuo, H. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Bennett, B.

R. Soref and B. Bennett, “Electrooptical effects in silicon,” IEEE J. Quantum Electron. 23(1), 123–129 (1987).
[CrossRef]

Bergman, K.

Biberman, A.

Bowers, J. E.

Y. Kang, H. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y. Kuo, H. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006).
[CrossRef] [PubMed]

Campbell, J. C.

Y. Kang, H. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y. Kuo, H. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Chen, H.

Y. Kang, H. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y. Kuo, H. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Chen, H. T.

Chen, J.

Chen, L.

Chen, P.

Chetrit, Y.

Ciftcioglu, B.

Cohen, O.

A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006).
[CrossRef] [PubMed]

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005).
[CrossRef] [PubMed]

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature 427(6975), 615–618 (2004).
[CrossRef] [PubMed]

Cunningham, J. E.

Dahlem, M. S.

Ding, J. F.

Dong, P.

Emerson, N. G.

Fang, A.

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005).
[CrossRef] [PubMed]

Fang, A. W.

Fedeli, J. M.

Feng, D. Z.

Feng, N. N.

Fournier, M.

Gan, F.

Gardes, F. Y.

Geis, M. W.

Geng, M. M.

Giziewicz, W.

Green, W. M. J.

Grein, M. E.

Grosse, P.

Hak, D.

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005).
[CrossRef] [PubMed]

Holzwarth, C. W.

Hong, C. Y.

Hu, Y.

Ippen, E. P.

Izhaky, N.

Ji, R. Q.

Jia, L. X.

Jones, R.

A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006).
[CrossRef] [PubMed]

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005).
[CrossRef] [PubMed]

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature 427(6975), 615–618 (2004).
[CrossRef] [PubMed]

Kang, Y.

Y. Kang, H. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y. Kuo, H. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Kärtner, F. X.

Kärtner, F. Z.

Khilo, A.

Kimerling, L. C.

Krishnamoorthy, A. V.

Kuo, Y.

Y. Kang, H. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y. Kuo, H. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Lee, B. G.

Lennon, D. M.

Li, G.

Liang, H.

Liao, L.

A. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. Paniccia, “High-speed optical modulation based on carrier depletion in a silicon waveguide,” Opt. Express 15(2), 660–668 (2007).
[CrossRef] [PubMed]

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature 427(6975), 615–618 (2004).
[CrossRef] [PubMed]

Liao, S.

Liow, T. Y.

Lipson, M.

Litski, S.

Y. Kang, H. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y. Kuo, H. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Liu, A.

A. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. Paniccia, “High-speed optical modulation based on carrier depletion in a silicon waveguide,” Opt. Express 15(2), 660–668 (2007).
[CrossRef] [PubMed]

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005).
[CrossRef] [PubMed]

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature 427(6975), 615–618 (2004).
[CrossRef] [PubMed]

Liu, H.

Y. Kang, H. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y. Kuo, H. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Liu, J.

Liu, Y. L.

Lo, G. Q.

Lu, Y. Y.

Lyszczarz, T. M.

Mashanovich, G.

McIntosh, D. C.

Y. Kang, H. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y. Kuo, H. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Michel, J.

Morse, M.

Y. Kang, H. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y. Kuo, H. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Nguyen, H.

Nicolaescu, R.

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature 427(6975), 615–618 (2004).
[CrossRef] [PubMed]

Paniccia, M.

A. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. Paniccia, “High-speed optical modulation based on carrier depletion in a silicon waveguide,” Opt. Express 15(2), 660–668 (2007).
[CrossRef] [PubMed]

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005).
[CrossRef] [PubMed]

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature 427(6975), 615–618 (2004).
[CrossRef] [PubMed]

Paniccia, M. J.

Y. Kang, H. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y. Kuo, H. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

A. W. Fang, H. Park, O. Cohen, R. Jones, M. J. Paniccia, and J. E. Bowers, “Electrically pumped hybrid AlGaInAs-silicon evanescent laser,” Opt. Express 14(20), 9203–9210 (2006).
[CrossRef] [PubMed]

Park, H.

Pauchard, A.

Y. Kang, H. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y. Kuo, H. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Popovic, M. A.

Pradhan, S.

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature 435(7040), 325–327 (2005).
[CrossRef] [PubMed]

Reed, G. T.

Rong, H.

H. Rong, R. Jones, A. Liu, O. Cohen, D. Hak, A. Fang, and M. Paniccia, “A continuous-wave Raman silicon laser,” Nature 433(7027), 725–728 (2005).
[CrossRef] [PubMed]

Rooks, M. J.

Rubin, D.

A. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. Paniccia, “High-speed optical modulation based on carrier depletion in a silicon waveguide,” Opt. Express 15(2), 660–668 (2007).
[CrossRef] [PubMed]

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature 427(6975), 615–618 (2004).
[CrossRef] [PubMed]

Samara-Rubio, D.

A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature 427(6975), 615–618 (2004).
[CrossRef] [PubMed]

Sarid, G.

Y. Kang, H. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y. Kuo, H. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Schmidt, B.

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature 435(7040), 325–327 (2005).
[CrossRef] [PubMed]

Sekaric, L.

Shafiiha, R.

Sherwood-Droz, N.

Smith, H. I.

Song, J. F.

Soref, R.

R. Soref and B. Bennett, “Electrooptical effects in silicon,” IEEE J. Quantum Electron. 23(1), 123–129 (1987).
[CrossRef]

Spector, S. J.

Thomson, D. J.

Tian, Y. H.

Tu, X. G.

Vlasov, Y. A.

S. Assefa, F. N. Xia, and Y. A. Vlasov, “Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects,” Nature 464(7285), 80–84 (2010).
[CrossRef] [PubMed]

W. M. J. Green, M. J. Rooks, L. Sekaric, and Y. A. Vlasov, “Ultra-compact, low RF power, 10 Gb/s silicon Mach-Zehnder modulator,” Opt. Express 15(25), 17106–17113 (2007).
[CrossRef] [PubMed]

Wang, H.

Wang, T.

Xia, F. N.

S. Assefa, F. N. Xia, and Y. A. Vlasov, “Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects,” Nature 464(7285), 80–84 (2010).
[CrossRef] [PubMed]

Xu, Q.

Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson, “Micrometre-scale silicon electro-optic modulator,” Nature 435(7040), 325–327 (2005).
[CrossRef] [PubMed]

Yang, L.

Yoon, J. U.

Yu, M. B.

Zadka, M.

Y. Kang, H. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y. Kuo, H. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Zaoui, W. S.

Y. Kang, H. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y. Kuo, H. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Zhang, L.

Zheng, D.

Zheng, X.

Y. Kang, H. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y. Kuo, H. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
[CrossRef]

Zhou, G. R.

Zhou, P.

Zhu, W. W.

IEEE J. Quantum Electron. (1)

R. Soref and B. Bennett, “Electrooptical effects in silicon,” IEEE J. Quantum Electron. 23(1), 123–129 (1987).
[CrossRef]

Nat. Photonics (2)

G. T. Reed, G. Mashanovich, F. Y. Gardes, and D. J. Thomson, “Silicon optical modulators,” Nat. Photonics 4(8), 518–526 (2010).
[CrossRef]

Y. Kang, H. Liu, M. Morse, M. J. Paniccia, M. Zadka, S. Litski, G. Sarid, A. Pauchard, Y. Kuo, H. Chen, W. S. Zaoui, J. E. Bowers, A. Beling, D. C. McIntosh, X. Zheng, and J. C. Campbell, “Monolithic germanium/silicon avalanche photodiodes with 340 GHz gain-bandwidth product,” Nat. Photonics 3(1), 59–63 (2008).
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Nature (4)

S. Assefa, F. N. Xia, and Y. A. Vlasov, “Reinventing germanium avalanche photodetector for nanophotonic on-chip optical interconnects,” Nature 464(7285), 80–84 (2010).
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A. Liu, R. Jones, L. Liao, D. Samara-Rubio, D. Rubin, O. Cohen, R. Nicolaescu, and M. Paniccia, “A high-speed silicon optical modulator based on a metal-oxide-semiconductor capacitor,” Nature 427(6975), 615–618 (2004).
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Opt. Express (13)

M. M. Geng, L. X. Jia, L. Zhang, L. Yang, P. Chen, T. Wang, and Y. L. Liu, “Four-channel reconfigurable optical add-drop multiplexer based on photonic wire waveguide,” Opt. Express 17(7), 5502–5516 (2009).
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R. Q. Ji, L. Yang, L. Zhang, Y. H. Tian, J. F. Ding, H. T. Chen, Y. Y. Lu, P. Zhou, and W. W. Zhu, “Five-port optical router for photonic networks-on-chip,” Opt. Express 19(21), 20258–20268 (2011).
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N. Sherwood-Droz, H. Wang, L. Chen, B. G. Lee, A. Biberman, K. Bergman, and M. Lipson, “Optical 4x4 hitless slicon router for optical networks-on-chip (NoC),” Opt. Express 16(20), 15915–15922 (2008).
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D. J. Thomson, F. Y. Gardes, Y. Hu, G. Mashanovich, M. Fournier, P. Grosse, J. M. Fedeli, and G. T. Reed, “High contrast 40Gbit/s optical modulation in silicon,” Opt. Express 19(12), 11507–11516 (2011).
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A. Liu, L. Liao, D. Rubin, H. Nguyen, B. Ciftcioglu, Y. Chetrit, N. Izhaky, and M. Paniccia, “High-speed optical modulation based on carrier depletion in a silicon waveguide,” Opt. Express 15(2), 660–668 (2007).
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Other (1)

D. M. Pozar, Microwave Engineering, 2nd, ed. (John Wiley & Sons, 1998), chap.2.

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Figures (9)

Fig. 1
Fig. 1

(a) Cross section of the diode and (b) its equivalent circuit model.

Fig. 2
Fig. 2

Distributed circuit model of the CPW electrode with a diode embedded below.

Fig. 3
Fig. 3

Transformed circuit model of the CPW electrode with a diode embedded below.

Fig. 4
Fig. 4

Simulation results with commercial software package HFSS. (a) Attenuation constant α versus track width and signal and ground metal gap, when series resistance R s , diode capacitance C D and frequency f are 4.5 Ω·mm, 100 pF/mm and 10 GHz, respectively. (b) Attenuation constant α versus track width and series resistance R s , when signal and ground metal gap, diode capacitance C D and frequency f are 5.5 mm, 100 pF/mm and 10 GHz, respectively. (c) Propagation constant β versus frequency and diode capacitance C D , when series resistance R s , track width and signal and ground metal gap are 4.5 Ω·mm, 28 um and 5.5 μm, respectively. (d) Characteristic impedance Ζ versus frequency and diode capacitance C D , when series resistance R s , track width and signal and ground metal gap are 4.5 Ω·mm, 28 μm and 5.5 μm. (e) Attenuation constant α versus frequency and diode capacitance C D , when series resistance R s , track width and signal and ground metal gap are 18 Ω·mm, 28 μm and 5.5 μm, respectively. (f) Attenuation constant α versus frequency and diode capacitance C D , when series resistance R s , track width and signal and ground metal gap are 4.5 Ω·mm, 28 μm and 5.5 μm, respectively.

Fig. 5
Fig. 5

(a) Schematic of the cross section of the modulation region. (b) Optical microscope image of the modulator with a CPW electrode and termination resistors.

Fig. 6
Fig. 6

Response spectra of the device with different driving voltages.

Fig. 7
Fig. 7

Experimental setup of the data transmission experiment.

Fig. 9
Fig. 9

Power response of the EDFA

Fig. 8
Fig. 8

(a) Eye diagram of 12.5 Gbit/s data measured with a driving voltage swing of 2 V and the reverse bias of 0.8 V. (b) Eye diagram of 12.5 Gbit/s data measured with a driving voltage swing of 1 V and the reverse bias of 0.5 V.

Equations (6)

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| 1 jω C D | R S .
R T = R S (1+ 1 ω 2 C 2 D R 2 S ), C T = C D ω 2 C 2 D R S 2 +1 .
γ= ( R E +jω L E )[ 1 R T +jω( C T + C E )] , Z= R E +jω L E 1 R T +jω( C T + C E ) .
γ=jω L E ( C T + C E ) [1 j 2 ( R E ω L E + 1 ω R T ( C T + C E ) )], Z= L E C T + C E .
R T 1 ω 2 C 2 D R S , C T C D .
γ=jω L E ( C E + C D ) + 1 2 ( R E C D + C E L E + ω 2 C 2 D R S L E C D + C E ), α= 1 2 ( R E C D + C E L E + ω 2 C 2 D R S L E C D + C E ), β=jω L E ( C E + C D ) .

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