Abstract

An Si/III–V hybrid laser oscillating at a single wavelength was developed for use in a large-scale Si optical I/O chip. The laser had an InP-based reflective semiconductor optical amplifier (SOA) chip integrated with an Si wavelength-selection-mirror chip in a flip-chip configuration. A low coupling loss of 1.55 dB at the Si-SOA interface was accomplished by both mode-field-matching between Si-SOA waveguides and accurately controlling the bonding position. The fabricated Si hybrid laser exhibited a very low threshold current of 9.4 mA, a high output power of 15.0 mW, and a high wall-plug efficiency of 7.6% at 20 °C. Moreover, the device maintained a high output power of >10 mW up to 60°C due to the high thermal conductance between the SOA chip and Si substrate. The short cavity length of the flip-chip bonded laser expanded the longitudinal mode spacing. This resulted in temperature-stable single longitudinal mode lasing and a low RIN level of <−130 dB/Hz.

© 2012 OSA

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  1. A. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. Cunningham, “Computer systems based on silicon photonic interconnects,” Proceedings of the IEEE97, 1337–1361 (2009).
    [CrossRef]
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  3. B. Jalali, V. Raghunathan, D. Dimitropoulos, and O. Boyraz, “Raman-based silicon photonics,” IEEE J. of Sel. Topics in Quantum Electron.12, 412–421 (2006).
    [CrossRef]
  4. J. Michel, R. Camacho-Aguilera, Y. Cai, N. Patel, J. Bessette, M. Romagnoli, R. Dutt, and L. Kimerling, “An electrically pumped Ge-on-Si laser,” in proc. of Optical Fiber Communication Conference (OFC2012) PDP5A.6.
  5. M. Sysak, D. Liang, R. Jones, G. Kurczveil, M. Piels, M. Fiorentino, R. Beausoleil, and J. Bowers, “Hybrid silicon laser technology: A thermal perspective,” IEEE J. of Sel. Topics in Quantum Electron.1–9 (2011).
  6. H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).
  7. X. Sun, A. Zadok, M. Shearn, K. Diest, A. Ghaffari, H. Atwater, A. Scherer, and A. Yariv, “Hybrid electrically pumped evanescent Si/InGaAsP lasers,” in proc. of Optical Fiber Communication Conference (OFC2009) OThN1.
  8. B. Ben Bakir, A. Descos, N. Olivier, D. Bordel, P. Grosse, J. Gentner, F. Lelarge, and J. Fedeli, “Hybrid Si/III–V lasers with adiabatic coupling,” in proc. of Group IV Photonics (IEEE GFP2011) 169–171.
  9. N. Fujioka, T. Chu, and M. Ishizaka, “Compact and low power consumption hybrid integrated wavelength tunable laser module using silicon waveguide resonators,” J. of Lightwave Technol.28, 3115–3120 (2010).
  10. T. Shimizu, N. Hatori, M. Okano, M. Ishizaka, Y. Urino, T. Yamamoto, M. Mori, T. Nakamura, and Y. Arakawa, “High density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for inter-chip optical interconnection,” in proc. of Group IV Photonics (IEEE GFP2011) 181–183.
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    [CrossRef]
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  14. S. Akiyama, T. Kurahashi, T. Baba, N. Hatori, T. Usuki, and T. Yamamoto, “1-Vpp 10-Gb/s operation of slow-light silicon mach-zehnder modulator in wavelength range of 1 nm,” in proc. of Group IV Photonics (IEEE GFP2010) 45–47.
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  16. S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, T. Akiyama, Y. Tanaka, and K. Morito, “Silicon-wire waveguide based external cavity laser for mW-order output power and temperature control free operation with silicon ring modulator,” Japan. J. of Appl. Phys.in press (2012).
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    [CrossRef]
  19. S. Tanaka, S. Jeong, S. Yamazaki, A. Uetake, S. Tomabechi, M. Ekawa, and K. Morito, “Monolithically integrated 8: 1 SOA gate switch with large extinction ratio and wide input power dynamic range,” IEEE J. of Quantum Electron.45, 1155–1162 (2009).
    [CrossRef]
  20. S. Tanaka, S. Jeong, S. Sekiguchi, T. Kurahashi, Y. Tanaka, and K. Morito, “Highly-efficient, low-noise Si hybrid laser using flip-chip bonded SOA,” in proc. of Optical Interconnects Conference (IEEE OIC2012) MB2.
  21. M. Yamada, “Transverse and longitudinal mode control in semiconductor injection lasers,” IEEE J. of Quantum Electron.19, 1365–1380 (1983).
    [CrossRef]

2012 (1)

Y. Vlasov, “Silicon CMOS-integrated nano-photonics for computer and data communications beyond 100G,” Communications Magazine IEEE50, s67–s72 (2012).
[CrossRef]

2011 (2)

M. Sysak, D. Liang, R. Jones, G. Kurczveil, M. Piels, M. Fiorentino, R. Beausoleil, and J. Bowers, “Hybrid silicon laser technology: A thermal perspective,” IEEE J. of Sel. Topics in Quantum Electron.1–9 (2011).

H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).

2010 (2)

N. Fujioka, T. Chu, and M. Ishizaka, “Compact and low power consumption hybrid integrated wavelength tunable laser module using silicon waveguide resonators,” J. of Lightwave Technol.28, 3115–3120 (2010).

K. Ohira, K. Kobayashi, N. Iizuka, H. Yoshida, M. Ezaki, H. Uemura, A. Kojima, K. Nakamura, H. Furuyama, and H. Shibata, “On-chip optical interconnection by using integrated III–V laser diode and photodetector with silicon waveguide,” Opt. Express18, 15440–15447 (2010).
[CrossRef] [PubMed]

2009 (3)

A. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. Cunningham, “Computer systems based on silicon photonic interconnects,” Proceedings of the IEEE97, 1337–1361 (2009).
[CrossRef]

T. Okumura, T. Maruyama, H. Yonezawa, N. Nishiyama, and S. Arai, “Injection-type GaInAsP–InP–Si distributed-feedback laser directly bonded on silicon-on-insulator substrate,” IEEE Photon. Technol. Lett.21, 283–285 (2009).
[CrossRef]

S. Tanaka, S. Jeong, S. Yamazaki, A. Uetake, S. Tomabechi, M. Ekawa, and K. Morito, “Monolithically integrated 8: 1 SOA gate switch with large extinction ratio and wide input power dynamic range,” IEEE J. of Quantum Electron.45, 1155–1162 (2009).
[CrossRef]

2006 (1)

B. Jalali, V. Raghunathan, D. Dimitropoulos, and O. Boyraz, “Raman-based silicon photonics,” IEEE J. of Sel. Topics in Quantum Electron.12, 412–421 (2006).
[CrossRef]

2005 (1)

T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, “Microphotonics devices based on silicon microfabrication technology,” IEEE J. of Sel. Topics in Quantum Electron.11, 232–240 (2005).
[CrossRef]

1983 (1)

M. Yamada, “Transverse and longitudinal mode control in semiconductor injection lasers,” IEEE J. of Quantum Electron.19, 1365–1380 (1983).
[CrossRef]

Akiyama, S.

S. Akiyama, T. Kurahashi, T. Baba, N. Hatori, T. Usuki, and T. Yamamoto, “1-Vpp 10-Gb/s operation of slow-light silicon mach-zehnder modulator in wavelength range of 1 nm,” in proc. of Group IV Photonics (IEEE GFP2010) 45–47.

S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, and K. Morito, “Hybrid laser with Si ring resonator and SOA for temperature control free operation with ring resonator-based modulator,” in proc. of Group IV Photonics (IEEE GFP2011) 172–174.

S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, T. Akiyama, Y. Tanaka, and K. Morito, “Silicon-wire waveguide based external cavity laser for mW-order output power and temperature control free operation with silicon ring modulator,” Japan. J. of Appl. Phys.in press (2012).

Akiyama, T.

S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, T. Akiyama, Y. Tanaka, and K. Morito, “Silicon-wire waveguide based external cavity laser for mW-order output power and temperature control free operation with silicon ring modulator,” Japan. J. of Appl. Phys.in press (2012).

Arai, S.

T. Okumura, T. Maruyama, H. Yonezawa, N. Nishiyama, and S. Arai, “Injection-type GaInAsP–InP–Si distributed-feedback laser directly bonded on silicon-on-insulator substrate,” IEEE Photon. Technol. Lett.21, 283–285 (2009).
[CrossRef]

Arakawa, Y.

T. Shimizu, N. Hatori, M. Okano, M. Ishizaka, Y. Urino, T. Yamamoto, M. Mori, T. Nakamura, and Y. Arakawa, “High density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for inter-chip optical interconnection,” in proc. of Group IV Photonics (IEEE GFP2011) 181–183.

Asghari, M.

A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III–V/Si external cavity DBR laser for 3-m SOI waveguides,” in proc. of Group IV Photonics (IEEE GFP2012) paper FA3.

Atwater, H.

X. Sun, A. Zadok, M. Shearn, K. Diest, A. Ghaffari, H. Atwater, A. Scherer, and A. Yariv, “Hybrid electrically pumped evanescent Si/InGaAsP lasers,” in proc. of Optical Fiber Communication Conference (OFC2009) OThN1.

Baba, T.

S. Akiyama, T. Kurahashi, T. Baba, N. Hatori, T. Usuki, and T. Yamamoto, “1-Vpp 10-Gb/s operation of slow-light silicon mach-zehnder modulator in wavelength range of 1 nm,” in proc. of Group IV Photonics (IEEE GFP2010) 45–47.

Beausoleil, R.

M. Sysak, D. Liang, R. Jones, G. Kurczveil, M. Piels, M. Fiorentino, R. Beausoleil, and J. Bowers, “Hybrid silicon laser technology: A thermal perspective,” IEEE J. of Sel. Topics in Quantum Electron.1–9 (2011).

Ben Bakir, B.

B. Ben Bakir, A. Descos, N. Olivier, D. Bordel, P. Grosse, J. Gentner, F. Lelarge, and J. Fedeli, “Hybrid Si/III–V lasers with adiabatic coupling,” in proc. of Group IV Photonics (IEEE GFP2011) 169–171.

Bessette, J.

J. Michel, R. Camacho-Aguilera, Y. Cai, N. Patel, J. Bessette, M. Romagnoli, R. Dutt, and L. Kimerling, “An electrically pumped Ge-on-Si laser,” in proc. of Optical Fiber Communication Conference (OFC2012) PDP5A.6.

Bijlani, B. J.

A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III–V/Si external cavity DBR laser for 3-m SOI waveguides,” in proc. of Group IV Photonics (IEEE GFP2012) paper FA3.

Bordel, D.

B. Ben Bakir, A. Descos, N. Olivier, D. Bordel, P. Grosse, J. Gentner, F. Lelarge, and J. Fedeli, “Hybrid Si/III–V lasers with adiabatic coupling,” in proc. of Group IV Photonics (IEEE GFP2011) 169–171.

Bovington, J.

H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).

Bowers, J.

H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).

M. Sysak, D. Liang, R. Jones, G. Kurczveil, M. Piels, M. Fiorentino, R. Beausoleil, and J. Bowers, “Hybrid silicon laser technology: A thermal perspective,” IEEE J. of Sel. Topics in Quantum Electron.1–9 (2011).

Boyraz, O.

B. Jalali, V. Raghunathan, D. Dimitropoulos, and O. Boyraz, “Raman-based silicon photonics,” IEEE J. of Sel. Topics in Quantum Electron.12, 412–421 (2006).
[CrossRef]

Cai, Y.

J. Michel, R. Camacho-Aguilera, Y. Cai, N. Patel, J. Bessette, M. Romagnoli, R. Dutt, and L. Kimerling, “An electrically pumped Ge-on-Si laser,” in proc. of Optical Fiber Communication Conference (OFC2012) PDP5A.6.

Camacho-Aguilera, R.

J. Michel, R. Camacho-Aguilera, Y. Cai, N. Patel, J. Bessette, M. Romagnoli, R. Dutt, and L. Kimerling, “An electrically pumped Ge-on-Si laser,” in proc. of Optical Fiber Communication Conference (OFC2012) PDP5A.6.

Chen, H.

H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).

Chu, T.

N. Fujioka, T. Chu, and M. Ishizaka, “Compact and low power consumption hybrid integrated wavelength tunable laser module using silicon waveguide resonators,” J. of Lightwave Technol.28, 3115–3120 (2010).

Cunningham, J.

A. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. Cunningham, “Computer systems based on silicon photonic interconnects,” Proceedings of the IEEE97, 1337–1361 (2009).
[CrossRef]

Cunningham, J. E.

A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III–V/Si external cavity DBR laser for 3-m SOI waveguides,” in proc. of Group IV Photonics (IEEE GFP2012) paper FA3.

Descos, A.

B. Ben Bakir, A. Descos, N. Olivier, D. Bordel, P. Grosse, J. Gentner, F. Lelarge, and J. Fedeli, “Hybrid Si/III–V lasers with adiabatic coupling,” in proc. of Group IV Photonics (IEEE GFP2011) 169–171.

Diest, K.

X. Sun, A. Zadok, M. Shearn, K. Diest, A. Ghaffari, H. Atwater, A. Scherer, and A. Yariv, “Hybrid electrically pumped evanescent Si/InGaAsP lasers,” in proc. of Optical Fiber Communication Conference (OFC2009) OThN1.

Dimitropoulos, D.

B. Jalali, V. Raghunathan, D. Dimitropoulos, and O. Boyraz, “Raman-based silicon photonics,” IEEE J. of Sel. Topics in Quantum Electron.12, 412–421 (2006).
[CrossRef]

Dutt, R.

J. Michel, R. Camacho-Aguilera, Y. Cai, N. Patel, J. Bessette, M. Romagnoli, R. Dutt, and L. Kimerling, “An electrically pumped Ge-on-Si laser,” in proc. of Optical Fiber Communication Conference (OFC2012) PDP5A.6.

Ekawa, M.

S. Tanaka, S. Jeong, S. Yamazaki, A. Uetake, S. Tomabechi, M. Ekawa, and K. Morito, “Monolithically integrated 8: 1 SOA gate switch with large extinction ratio and wide input power dynamic range,” IEEE J. of Quantum Electron.45, 1155–1162 (2009).
[CrossRef]

Ezaki, M.

Fang, A.

H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).

Fedeli, J.

B. Ben Bakir, A. Descos, N. Olivier, D. Bordel, P. Grosse, J. Gentner, F. Lelarge, and J. Fedeli, “Hybrid Si/III–V lasers with adiabatic coupling,” in proc. of Group IV Photonics (IEEE GFP2011) 169–171.

Feng, D.

A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III–V/Si external cavity DBR laser for 3-m SOI waveguides,” in proc. of Group IV Photonics (IEEE GFP2012) paper FA3.

Fiorentino, M.

M. Sysak, D. Liang, R. Jones, G. Kurczveil, M. Piels, M. Fiorentino, R. Beausoleil, and J. Bowers, “Hybrid silicon laser technology: A thermal perspective,” IEEE J. of Sel. Topics in Quantum Electron.1–9 (2011).

Fong, J.

A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III–V/Si external cavity DBR laser for 3-m SOI waveguides,” in proc. of Group IV Photonics (IEEE GFP2012) paper FA3.

Fujioka, N.

N. Fujioka, T. Chu, and M. Ishizaka, “Compact and low power consumption hybrid integrated wavelength tunable laser module using silicon waveguide resonators,” J. of Lightwave Technol.28, 3115–3120 (2010).

Fukuda, H.

T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, “Microphotonics devices based on silicon microfabrication technology,” IEEE J. of Sel. Topics in Quantum Electron.11, 232–240 (2005).
[CrossRef]

Furuyama, H.

Gentner, J.

B. Ben Bakir, A. Descos, N. Olivier, D. Bordel, P. Grosse, J. Gentner, F. Lelarge, and J. Fedeli, “Hybrid Si/III–V lasers with adiabatic coupling,” in proc. of Group IV Photonics (IEEE GFP2011) 169–171.

Ghaffari, A.

X. Sun, A. Zadok, M. Shearn, K. Diest, A. Ghaffari, H. Atwater, A. Scherer, and A. Yariv, “Hybrid electrically pumped evanescent Si/InGaAsP lasers,” in proc. of Optical Fiber Communication Conference (OFC2009) OThN1.

Grosse, P.

B. Ben Bakir, A. Descos, N. Olivier, D. Bordel, P. Grosse, J. Gentner, F. Lelarge, and J. Fedeli, “Hybrid Si/III–V lasers with adiabatic coupling,” in proc. of Group IV Photonics (IEEE GFP2011) 169–171.

Hatori, N.

T. Shimizu, N. Hatori, M. Okano, M. Ishizaka, Y. Urino, T. Yamamoto, M. Mori, T. Nakamura, and Y. Arakawa, “High density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for inter-chip optical interconnection,” in proc. of Group IV Photonics (IEEE GFP2011) 181–183.

S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, T. Akiyama, Y. Tanaka, and K. Morito, “Silicon-wire waveguide based external cavity laser for mW-order output power and temperature control free operation with silicon ring modulator,” Japan. J. of Appl. Phys.in press (2012).

S. Akiyama, T. Kurahashi, T. Baba, N. Hatori, T. Usuki, and T. Yamamoto, “1-Vpp 10-Gb/s operation of slow-light silicon mach-zehnder modulator in wavelength range of 1 nm,” in proc. of Group IV Photonics (IEEE GFP2010) 45–47.

S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, and K. Morito, “Hybrid laser with Si ring resonator and SOA for temperature control free operation with ring resonator-based modulator,” in proc. of Group IV Photonics (IEEE GFP2011) 172–174.

Heanue, J.

G. Yoffe, T. Nguyen, J. Heanue, and B. Pezeshki, “Efficient compact tunable laser for access networks using silicon ring resonators,” in proc. of Optical Fiber Communication Conference (OFC2012) OW1G4.

Ho, R.

A. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. Cunningham, “Computer systems based on silicon photonic interconnects,” Proceedings of the IEEE97, 1337–1361 (2009).
[CrossRef]

Iizuka, N.

Ishizaka, M.

N. Fujioka, T. Chu, and M. Ishizaka, “Compact and low power consumption hybrid integrated wavelength tunable laser module using silicon waveguide resonators,” J. of Lightwave Technol.28, 3115–3120 (2010).

T. Shimizu, N. Hatori, M. Okano, M. Ishizaka, Y. Urino, T. Yamamoto, M. Mori, T. Nakamura, and Y. Arakawa, “High density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for inter-chip optical interconnection,” in proc. of Group IV Photonics (IEEE GFP2011) 181–183.

Itabashi, S.

T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, “Microphotonics devices based on silicon microfabrication technology,” IEEE J. of Sel. Topics in Quantum Electron.11, 232–240 (2005).
[CrossRef]

Jacob-Mitos, M.

H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).

Jalali, B.

B. Jalali, V. Raghunathan, D. Dimitropoulos, and O. Boyraz, “Raman-based silicon photonics,” IEEE J. of Sel. Topics in Quantum Electron.12, 412–421 (2006).
[CrossRef]

Jeong, S.

S. Tanaka, S. Jeong, S. Yamazaki, A. Uetake, S. Tomabechi, M. Ekawa, and K. Morito, “Monolithically integrated 8: 1 SOA gate switch with large extinction ratio and wide input power dynamic range,” IEEE J. of Quantum Electron.45, 1155–1162 (2009).
[CrossRef]

S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, T. Akiyama, Y. Tanaka, and K. Morito, “Silicon-wire waveguide based external cavity laser for mW-order output power and temperature control free operation with silicon ring modulator,” Japan. J. of Appl. Phys.in press (2012).

S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, and K. Morito, “Hybrid laser with Si ring resonator and SOA for temperature control free operation with ring resonator-based modulator,” in proc. of Group IV Photonics (IEEE GFP2011) 172–174.

S. Tanaka, S. Jeong, S. Sekiguchi, T. Kurahashi, Y. Tanaka, and K. Morito, “Highly-efficient, low-noise Si hybrid laser using flip-chip bonded SOA,” in proc. of Optical Interconnects Conference (IEEE OIC2012) MB2.

Jones, R.

M. Sysak, D. Liang, R. Jones, G. Kurczveil, M. Piels, M. Fiorentino, R. Beausoleil, and J. Bowers, “Hybrid silicon laser technology: A thermal perspective,” IEEE J. of Sel. Topics in Quantum Electron.1–9 (2011).

H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).

Kimerling, L.

J. Michel, R. Camacho-Aguilera, Y. Cai, N. Patel, J. Bessette, M. Romagnoli, R. Dutt, and L. Kimerling, “An electrically pumped Ge-on-Si laser,” in proc. of Optical Fiber Communication Conference (OFC2012) PDP5A.6.

Kobayashi, K.

Koch, B.

H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).

Kojima, A.

Koka, P.

A. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. Cunningham, “Computer systems based on silicon photonic interconnects,” Proceedings of the IEEE97, 1337–1361 (2009).
[CrossRef]

Krishnamoorthy, A.

A. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. Cunningham, “Computer systems based on silicon photonic interconnects,” Proceedings of the IEEE97, 1337–1361 (2009).
[CrossRef]

Krishnamoorthy, A. V.

A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III–V/Si external cavity DBR laser for 3-m SOI waveguides,” in proc. of Group IV Photonics (IEEE GFP2012) paper FA3.

Kurahashi, T.

S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, and K. Morito, “Hybrid laser with Si ring resonator and SOA for temperature control free operation with ring resonator-based modulator,” in proc. of Group IV Photonics (IEEE GFP2011) 172–174.

S. Akiyama, T. Kurahashi, T. Baba, N. Hatori, T. Usuki, and T. Yamamoto, “1-Vpp 10-Gb/s operation of slow-light silicon mach-zehnder modulator in wavelength range of 1 nm,” in proc. of Group IV Photonics (IEEE GFP2010) 45–47.

S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, T. Akiyama, Y. Tanaka, and K. Morito, “Silicon-wire waveguide based external cavity laser for mW-order output power and temperature control free operation with silicon ring modulator,” Japan. J. of Appl. Phys.in press (2012).

S. Tanaka, S. Jeong, S. Sekiguchi, T. Kurahashi, Y. Tanaka, and K. Morito, “Highly-efficient, low-noise Si hybrid laser using flip-chip bonded SOA,” in proc. of Optical Interconnects Conference (IEEE OIC2012) MB2.

Kurczveil, G.

M. Sysak, D. Liang, R. Jones, G. Kurczveil, M. Piels, M. Fiorentino, R. Beausoleil, and J. Bowers, “Hybrid silicon laser technology: A thermal perspective,” IEEE J. of Sel. Topics in Quantum Electron.1–9 (2011).

Lee, D. C.

A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III–V/Si external cavity DBR laser for 3-m SOI waveguides,” in proc. of Group IV Photonics (IEEE GFP2012) paper FA3.

Lelarge, F.

B. Ben Bakir, A. Descos, N. Olivier, D. Bordel, P. Grosse, J. Gentner, F. Lelarge, and J. Fedeli, “Hybrid Si/III–V lasers with adiabatic coupling,” in proc. of Group IV Photonics (IEEE GFP2011) 169–171.

Lexau, J.

A. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. Cunningham, “Computer systems based on silicon photonic interconnects,” Proceedings of the IEEE97, 1337–1361 (2009).
[CrossRef]

Li, G.

A. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. Cunningham, “Computer systems based on silicon photonic interconnects,” Proceedings of the IEEE97, 1337–1361 (2009).
[CrossRef]

Liang, D.

M. Sysak, D. Liang, R. Jones, G. Kurczveil, M. Piels, M. Fiorentino, R. Beausoleil, and J. Bowers, “Hybrid silicon laser technology: A thermal perspective,” IEEE J. of Sel. Topics in Quantum Electron.1–9 (2011).

H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).

Liao, L.

H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).

Luff, B. J.

A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III–V/Si external cavity DBR laser for 3-m SOI waveguides,” in proc. of Group IV Photonics (IEEE GFP2012) paper FA3.

Maruyama, T.

T. Okumura, T. Maruyama, H. Yonezawa, N. Nishiyama, and S. Arai, “Injection-type GaInAsP–InP–Si distributed-feedback laser directly bonded on silicon-on-insulator substrate,” IEEE Photon. Technol. Lett.21, 283–285 (2009).
[CrossRef]

Michel, J.

J. Michel, R. Camacho-Aguilera, Y. Cai, N. Patel, J. Bessette, M. Romagnoli, R. Dutt, and L. Kimerling, “An electrically pumped Ge-on-Si laser,” in proc. of Optical Fiber Communication Conference (OFC2012) PDP5A.6.

Mori, M.

T. Shimizu, N. Hatori, M. Okano, M. Ishizaka, Y. Urino, T. Yamamoto, M. Mori, T. Nakamura, and Y. Arakawa, “High density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for inter-chip optical interconnection,” in proc. of Group IV Photonics (IEEE GFP2011) 181–183.

Morita, H.

T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, “Microphotonics devices based on silicon microfabrication technology,” IEEE J. of Sel. Topics in Quantum Electron.11, 232–240 (2005).
[CrossRef]

Morito, K.

S. Tanaka, S. Jeong, S. Yamazaki, A. Uetake, S. Tomabechi, M. Ekawa, and K. Morito, “Monolithically integrated 8: 1 SOA gate switch with large extinction ratio and wide input power dynamic range,” IEEE J. of Quantum Electron.45, 1155–1162 (2009).
[CrossRef]

S. Tanaka, S. Jeong, S. Sekiguchi, T. Kurahashi, Y. Tanaka, and K. Morito, “Highly-efficient, low-noise Si hybrid laser using flip-chip bonded SOA,” in proc. of Optical Interconnects Conference (IEEE OIC2012) MB2.

S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, T. Akiyama, Y. Tanaka, and K. Morito, “Silicon-wire waveguide based external cavity laser for mW-order output power and temperature control free operation with silicon ring modulator,” Japan. J. of Appl. Phys.in press (2012).

S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, and K. Morito, “Hybrid laser with Si ring resonator and SOA for temperature control free operation with ring resonator-based modulator,” in proc. of Group IV Photonics (IEEE GFP2011) 172–174.

Nakamura, K.

Nakamura, T.

T. Shimizu, N. Hatori, M. Okano, M. Ishizaka, Y. Urino, T. Yamamoto, M. Mori, T. Nakamura, and Y. Arakawa, “High density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for inter-chip optical interconnection,” in proc. of Group IV Photonics (IEEE GFP2011) 181–183.

Nguyen, T.

G. Yoffe, T. Nguyen, J. Heanue, and B. Pezeshki, “Efficient compact tunable laser for access networks using silicon ring resonators,” in proc. of Optical Fiber Communication Conference (OFC2012) OW1G4.

Nishiyama, N.

T. Okumura, T. Maruyama, H. Yonezawa, N. Nishiyama, and S. Arai, “Injection-type GaInAsP–InP–Si distributed-feedback laser directly bonded on silicon-on-insulator substrate,” IEEE Photon. Technol. Lett.21, 283–285 (2009).
[CrossRef]

Ohira, K.

Okano, M.

T. Shimizu, N. Hatori, M. Okano, M. Ishizaka, Y. Urino, T. Yamamoto, M. Mori, T. Nakamura, and Y. Arakawa, “High density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for inter-chip optical interconnection,” in proc. of Group IV Photonics (IEEE GFP2011) 181–183.

Okumura, T.

T. Okumura, T. Maruyama, H. Yonezawa, N. Nishiyama, and S. Arai, “Injection-type GaInAsP–InP–Si distributed-feedback laser directly bonded on silicon-on-insulator substrate,” IEEE Photon. Technol. Lett.21, 283–285 (2009).
[CrossRef]

Olivier, N.

B. Ben Bakir, A. Descos, N. Olivier, D. Bordel, P. Grosse, J. Gentner, F. Lelarge, and J. Fedeli, “Hybrid Si/III–V lasers with adiabatic coupling,” in proc. of Group IV Photonics (IEEE GFP2011) 169–171.

Park, H.

H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).

Patel, N.

J. Michel, R. Camacho-Aguilera, Y. Cai, N. Patel, J. Bessette, M. Romagnoli, R. Dutt, and L. Kimerling, “An electrically pumped Ge-on-Si laser,” in proc. of Optical Fiber Communication Conference (OFC2012) PDP5A.6.

Pezeshki, B.

G. Yoffe, T. Nguyen, J. Heanue, and B. Pezeshki, “Efficient compact tunable laser for access networks using silicon ring resonators,” in proc. of Optical Fiber Communication Conference (OFC2012) OW1G4.

Piels, M.

M. Sysak, D. Liang, R. Jones, G. Kurczveil, M. Piels, M. Fiorentino, R. Beausoleil, and J. Bowers, “Hybrid silicon laser technology: A thermal perspective,” IEEE J. of Sel. Topics in Quantum Electron.1–9 (2011).

Qian, W.

A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III–V/Si external cavity DBR laser for 3-m SOI waveguides,” in proc. of Group IV Photonics (IEEE GFP2012) paper FA3.

Raghunathan, V.

B. Jalali, V. Raghunathan, D. Dimitropoulos, and O. Boyraz, “Raman-based silicon photonics,” IEEE J. of Sel. Topics in Quantum Electron.12, 412–421 (2006).
[CrossRef]

Romagnoli, M.

J. Michel, R. Camacho-Aguilera, Y. Cai, N. Patel, J. Bessette, M. Romagnoli, R. Dutt, and L. Kimerling, “An electrically pumped Ge-on-Si laser,” in proc. of Optical Fiber Communication Conference (OFC2012) PDP5A.6.

Scherer, A.

X. Sun, A. Zadok, M. Shearn, K. Diest, A. Ghaffari, H. Atwater, A. Scherer, and A. Yariv, “Hybrid electrically pumped evanescent Si/InGaAsP lasers,” in proc. of Optical Fiber Communication Conference (OFC2009) OThN1.

Schwetman, H.

A. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. Cunningham, “Computer systems based on silicon photonic interconnects,” Proceedings of the IEEE97, 1337–1361 (2009).
[CrossRef]

Seddighian, P.

A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III–V/Si external cavity DBR laser for 3-m SOI waveguides,” in proc. of Group IV Photonics (IEEE GFP2012) paper FA3.

Sekiguchi, S.

S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, and K. Morito, “Hybrid laser with Si ring resonator and SOA for temperature control free operation with ring resonator-based modulator,” in proc. of Group IV Photonics (IEEE GFP2011) 172–174.

S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, T. Akiyama, Y. Tanaka, and K. Morito, “Silicon-wire waveguide based external cavity laser for mW-order output power and temperature control free operation with silicon ring modulator,” Japan. J. of Appl. Phys.in press (2012).

S. Tanaka, S. Jeong, S. Sekiguchi, T. Kurahashi, Y. Tanaka, and K. Morito, “Highly-efficient, low-noise Si hybrid laser using flip-chip bonded SOA,” in proc. of Optical Interconnects Conference (IEEE OIC2012) MB2.

Shafiiha, R.

A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III–V/Si external cavity DBR laser for 3-m SOI waveguides,” in proc. of Group IV Photonics (IEEE GFP2012) paper FA3.

Shearn, M.

X. Sun, A. Zadok, M. Shearn, K. Diest, A. Ghaffari, H. Atwater, A. Scherer, and A. Yariv, “Hybrid electrically pumped evanescent Si/InGaAsP lasers,” in proc. of Optical Fiber Communication Conference (OFC2009) OThN1.

Shibata, H.

Shimizu, T.

T. Shimizu, N. Hatori, M. Okano, M. Ishizaka, Y. Urino, T. Yamamoto, M. Mori, T. Nakamura, and Y. Arakawa, “High density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for inter-chip optical interconnection,” in proc. of Group IV Photonics (IEEE GFP2011) 181–183.

Shoji, T.

T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, “Microphotonics devices based on silicon microfabrication technology,” IEEE J. of Sel. Topics in Quantum Electron.11, 232–240 (2005).
[CrossRef]

Shubin, I.

A. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. Cunningham, “Computer systems based on silicon photonic interconnects,” Proceedings of the IEEE97, 1337–1361 (2009).
[CrossRef]

Sun, X.

X. Sun, A. Zadok, M. Shearn, K. Diest, A. Ghaffari, H. Atwater, A. Scherer, and A. Yariv, “Hybrid electrically pumped evanescent Si/InGaAsP lasers,” in proc. of Optical Fiber Communication Conference (OFC2009) OThN1.

Sysak, M.

M. Sysak, D. Liang, R. Jones, G. Kurczveil, M. Piels, M. Fiorentino, R. Beausoleil, and J. Bowers, “Hybrid silicon laser technology: A thermal perspective,” IEEE J. of Sel. Topics in Quantum Electron.1–9 (2011).

H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).

Takahashi, J.

T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, “Microphotonics devices based on silicon microfabrication technology,” IEEE J. of Sel. Topics in Quantum Electron.11, 232–240 (2005).
[CrossRef]

Takahashi, M.

T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, “Microphotonics devices based on silicon microfabrication technology,” IEEE J. of Sel. Topics in Quantum Electron.11, 232–240 (2005).
[CrossRef]

Tamechika, E.

T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, “Microphotonics devices based on silicon microfabrication technology,” IEEE J. of Sel. Topics in Quantum Electron.11, 232–240 (2005).
[CrossRef]

Tanaka, S.

S. Tanaka, S. Jeong, S. Yamazaki, A. Uetake, S. Tomabechi, M. Ekawa, and K. Morito, “Monolithically integrated 8: 1 SOA gate switch with large extinction ratio and wide input power dynamic range,” IEEE J. of Quantum Electron.45, 1155–1162 (2009).
[CrossRef]

S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, T. Akiyama, Y. Tanaka, and K. Morito, “Silicon-wire waveguide based external cavity laser for mW-order output power and temperature control free operation with silicon ring modulator,” Japan. J. of Appl. Phys.in press (2012).

S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, and K. Morito, “Hybrid laser with Si ring resonator and SOA for temperature control free operation with ring resonator-based modulator,” in proc. of Group IV Photonics (IEEE GFP2011) 172–174.

S. Tanaka, S. Jeong, S. Sekiguchi, T. Kurahashi, Y. Tanaka, and K. Morito, “Highly-efficient, low-noise Si hybrid laser using flip-chip bonded SOA,” in proc. of Optical Interconnects Conference (IEEE OIC2012) MB2.

Tanaka, Y.

S. Tanaka, S. Jeong, S. Sekiguchi, T. Kurahashi, Y. Tanaka, and K. Morito, “Highly-efficient, low-noise Si hybrid laser using flip-chip bonded SOA,” in proc. of Optical Interconnects Conference (IEEE OIC2012) MB2.

S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, T. Akiyama, Y. Tanaka, and K. Morito, “Silicon-wire waveguide based external cavity laser for mW-order output power and temperature control free operation with silicon ring modulator,” Japan. J. of Appl. Phys.in press (2012).

Tang, Y.

H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).

Tomabechi, S.

S. Tanaka, S. Jeong, S. Yamazaki, A. Uetake, S. Tomabechi, M. Ekawa, and K. Morito, “Monolithically integrated 8: 1 SOA gate switch with large extinction ratio and wide input power dynamic range,” IEEE J. of Quantum Electron.45, 1155–1162 (2009).
[CrossRef]

Tsuchizawa, T.

T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, “Microphotonics devices based on silicon microfabrication technology,” IEEE J. of Sel. Topics in Quantum Electron.11, 232–240 (2005).
[CrossRef]

Uemura, H.

Uetake, A.

S. Tanaka, S. Jeong, S. Yamazaki, A. Uetake, S. Tomabechi, M. Ekawa, and K. Morito, “Monolithically integrated 8: 1 SOA gate switch with large extinction ratio and wide input power dynamic range,” IEEE J. of Quantum Electron.45, 1155–1162 (2009).
[CrossRef]

Urino, Y.

T. Shimizu, N. Hatori, M. Okano, M. Ishizaka, Y. Urino, T. Yamamoto, M. Mori, T. Nakamura, and Y. Arakawa, “High density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for inter-chip optical interconnection,” in proc. of Group IV Photonics (IEEE GFP2011) 181–183.

Usuki, T.

S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, T. Akiyama, Y. Tanaka, and K. Morito, “Silicon-wire waveguide based external cavity laser for mW-order output power and temperature control free operation with silicon ring modulator,” Japan. J. of Appl. Phys.in press (2012).

S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, and K. Morito, “Hybrid laser with Si ring resonator and SOA for temperature control free operation with ring resonator-based modulator,” in proc. of Group IV Photonics (IEEE GFP2011) 172–174.

S. Akiyama, T. Kurahashi, T. Baba, N. Hatori, T. Usuki, and T. Yamamoto, “1-Vpp 10-Gb/s operation of slow-light silicon mach-zehnder modulator in wavelength range of 1 nm,” in proc. of Group IV Photonics (IEEE GFP2010) 45–47.

Vlasov, Y.

Y. Vlasov, “Silicon CMOS-integrated nano-photonics for computer and data communications beyond 100G,” Communications Magazine IEEE50, s67–s72 (2012).
[CrossRef]

Watanabe, T.

T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, “Microphotonics devices based on silicon microfabrication technology,” IEEE J. of Sel. Topics in Quantum Electron.11, 232–240 (2005).
[CrossRef]

Wong, K.

H. Park, M. Sysak, H. Chen, A. Fang, D. Liang, L. Liao, B. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. of Sel. Topics in Quantum Electron.1–18 (2011).

Yamada, K.

T. Tsuchizawa, K. Yamada, H. Fukuda, T. Watanabe, J. Takahashi, M. Takahashi, T. Shoji, E. Tamechika, S. Itabashi, and H. Morita, “Microphotonics devices based on silicon microfabrication technology,” IEEE J. of Sel. Topics in Quantum Electron.11, 232–240 (2005).
[CrossRef]

Yamada, M.

M. Yamada, “Transverse and longitudinal mode control in semiconductor injection lasers,” IEEE J. of Quantum Electron.19, 1365–1380 (1983).
[CrossRef]

Yamamoto, T.

S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, T. Akiyama, Y. Tanaka, and K. Morito, “Silicon-wire waveguide based external cavity laser for mW-order output power and temperature control free operation with silicon ring modulator,” Japan. J. of Appl. Phys.in press (2012).

S. Akiyama, T. Kurahashi, T. Baba, N. Hatori, T. Usuki, and T. Yamamoto, “1-Vpp 10-Gb/s operation of slow-light silicon mach-zehnder modulator in wavelength range of 1 nm,” in proc. of Group IV Photonics (IEEE GFP2010) 45–47.

S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, and K. Morito, “Hybrid laser with Si ring resonator and SOA for temperature control free operation with ring resonator-based modulator,” in proc. of Group IV Photonics (IEEE GFP2011) 172–174.

T. Shimizu, N. Hatori, M. Okano, M. Ishizaka, Y. Urino, T. Yamamoto, M. Mori, T. Nakamura, and Y. Arakawa, “High density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for inter-chip optical interconnection,” in proc. of Group IV Photonics (IEEE GFP2011) 181–183.

Yamazaki, S.

S. Tanaka, S. Jeong, S. Yamazaki, A. Uetake, S. Tomabechi, M. Ekawa, and K. Morito, “Monolithically integrated 8: 1 SOA gate switch with large extinction ratio and wide input power dynamic range,” IEEE J. of Quantum Electron.45, 1155–1162 (2009).
[CrossRef]

Yariv, A.

X. Sun, A. Zadok, M. Shearn, K. Diest, A. Ghaffari, H. Atwater, A. Scherer, and A. Yariv, “Hybrid electrically pumped evanescent Si/InGaAsP lasers,” in proc. of Optical Fiber Communication Conference (OFC2009) OThN1.

Yoffe, G.

G. Yoffe, T. Nguyen, J. Heanue, and B. Pezeshki, “Efficient compact tunable laser for access networks using silicon ring resonators,” in proc. of Optical Fiber Communication Conference (OFC2012) OW1G4.

Yonezawa, H.

T. Okumura, T. Maruyama, H. Yonezawa, N. Nishiyama, and S. Arai, “Injection-type GaInAsP–InP–Si distributed-feedback laser directly bonded on silicon-on-insulator substrate,” IEEE Photon. Technol. Lett.21, 283–285 (2009).
[CrossRef]

Yoshida, H.

Zadok, A.

X. Sun, A. Zadok, M. Shearn, K. Diest, A. Ghaffari, H. Atwater, A. Scherer, and A. Yariv, “Hybrid electrically pumped evanescent Si/InGaAsP lasers,” in proc. of Optical Fiber Communication Conference (OFC2009) OThN1.

Zheng, X.

A. Krishnamoorthy, R. Ho, X. Zheng, H. Schwetman, J. Lexau, P. Koka, G. Li, I. Shubin, and J. Cunningham, “Computer systems based on silicon photonic interconnects,” Proceedings of the IEEE97, 1337–1361 (2009).
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A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III–V/Si external cavity DBR laser for 3-m SOI waveguides,” in proc. of Group IV Photonics (IEEE GFP2012) paper FA3.

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[CrossRef]

Other (10)

S. Tanaka, S. Jeong, S. Sekiguchi, T. Kurahashi, Y. Tanaka, and K. Morito, “Highly-efficient, low-noise Si hybrid laser using flip-chip bonded SOA,” in proc. of Optical Interconnects Conference (IEEE OIC2012) MB2.

G. Yoffe, T. Nguyen, J. Heanue, and B. Pezeshki, “Efficient compact tunable laser for access networks using silicon ring resonators,” in proc. of Optical Fiber Communication Conference (OFC2012) OW1G4.

A. J. Zilkie, B. J. Bijlani, P. Seddighian, D. C. Lee, W. Qian, J. Fong, R. Shafiiha, D. Feng, B. J. Luff, X. Zheng, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-efficiency hybrid III–V/Si external cavity DBR laser for 3-m SOI waveguides,” in proc. of Group IV Photonics (IEEE GFP2012) paper FA3.

S. Akiyama, T. Kurahashi, T. Baba, N. Hatori, T. Usuki, and T. Yamamoto, “1-Vpp 10-Gb/s operation of slow-light silicon mach-zehnder modulator in wavelength range of 1 nm,” in proc. of Group IV Photonics (IEEE GFP2010) 45–47.

S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, and K. Morito, “Hybrid laser with Si ring resonator and SOA for temperature control free operation with ring resonator-based modulator,” in proc. of Group IV Photonics (IEEE GFP2011) 172–174.

S. Jeong, S. Tanaka, S. Sekiguchi, T. Kurahashi, N. Hatori, S. Akiyama, T. Usuki, T. Yamamoto, T. Akiyama, Y. Tanaka, and K. Morito, “Silicon-wire waveguide based external cavity laser for mW-order output power and temperature control free operation with silicon ring modulator,” Japan. J. of Appl. Phys.in press (2012).

T. Shimizu, N. Hatori, M. Okano, M. Ishizaka, Y. Urino, T. Yamamoto, M. Mori, T. Nakamura, and Y. Arakawa, “High density hybrid integrated light source with a laser diode array on a silicon optical waveguide platform for inter-chip optical interconnection,” in proc. of Group IV Photonics (IEEE GFP2011) 181–183.

J. Michel, R. Camacho-Aguilera, Y. Cai, N. Patel, J. Bessette, M. Romagnoli, R. Dutt, and L. Kimerling, “An electrically pumped Ge-on-Si laser,” in proc. of Optical Fiber Communication Conference (OFC2012) PDP5A.6.

X. Sun, A. Zadok, M. Shearn, K. Diest, A. Ghaffari, H. Atwater, A. Scherer, and A. Yariv, “Hybrid electrically pumped evanescent Si/InGaAsP lasers,” in proc. of Optical Fiber Communication Conference (OFC2009) OThN1.

B. Ben Bakir, A. Descos, N. Olivier, D. Bordel, P. Grosse, J. Gentner, F. Lelarge, and J. Fedeli, “Hybrid Si/III–V lasers with adiabatic coupling,” in proc. of Group IV Photonics (IEEE GFP2011) 169–171.

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Figures (10)

Fig. 1
Fig. 1

Conceptual strucure of proposed Si transmitter for operation free of temperature control.

Fig. 2
Fig. 2

(a) schematic cavity structure of Si hybrid laser, (b) simulated LI characteristics for different coupling losses (C = 1.5,4.0, and 6.0 dB).

Fig. 3
Fig. 3

(a) schematic of structure of Si-SOA interface, (b) near field pattern (NFP) at SOA facet, (c) NFP at Si facet.

Fig. 4
Fig. 4

(a) Distribution of horizontal misalignment and coupling tolerance, (b) Difference in waveguide heights and vertical coupling tolerance.

Fig. 5
Fig. 5

Photograph of fabricated Si hybrid laser.

Fig. 6
Fig. 6

Measured response of Si mirror chip.

Fig. 7
Fig. 7

(a) Light-Current characteristics of Si hybrid laser (b) Temperature dependencies of wall-plug efficiency and threshold current.

Fig. 8
Fig. 8

On-chip gain - current characteristics of reflective SOA.

Fig. 9
Fig. 9

(a) Lasing spectrum measured with high-resolution spectrum analyzer (b) temperature dependence of lasing spectrum at 70 mA.

Fig. 10
Fig. 10

Measured RIN spectra for flip-chip bonded laser and fiber-connected laser.

Tables (1)

Tables Icon

Table 1 Estimated breakdown of roundtrip cavity loss

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