Abstract

We demonstrate electrooptic modulation at a wavelength of 2165nm, using a free-carrier injection-based silicon Mach-Zehnder modulator. The modulator has a Vπ∙L figure of merit of 0.12V∙mm, and an extinction ratio of −23dB. Optical modulation experiments are performed at bitrates up to 3Gbps. Our results illustrate that optical modulator design methodologies previously developed for telecom-band devices can be successfully applied to produce high-performance devices for a silicon nanophotonic mid-infrared integrated circuit platform.

© 2012 OSA

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2012

N. Ophir, R. K. W. Lau, M. Menard, R. Salem, K. Padmaraju, Y. Okawachi, M. Lipson, A. L. Gaeta, and K. Bergman, “First demonstration of a 10-Gb/s RZ end-to-end four-wave-mixing based link at 1884 nm using silicon nanowaveguides,” IEEE Photon. Technol. Lett.24(4), 276–278 (2012).
[CrossRef]

D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P. P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett.24(4), 234–236 (2012).
[CrossRef]

X. Xiao, X. Li, H. Xu, Y. Hu, K. Xiong, Z. Li, T. Chu, J. Yu, and Y. Yu, “44-Gb/s silicon microring modulators based on zigzag PN junctions,” IEEE Photon. Technol. Lett.24(19), 1712–1714 (2012).
[CrossRef]

T. Baehr-Jones, R. Ding, Y. Liu, A. Ayazi, T. Pinguet, N. C. Harris, M. Streshinsky, P. Lee, Y. Zhang, A. E.-J. Lim, T.-Y. Liow, S. H.-G. Teo, G.-Q. Lo, and M. Hochberg, “Ultralow drive voltage silicon traveling-wave modulator,” Opt. Express20(11), 12014–12020 (2012).
[CrossRef] [PubMed]

H. Yu, M. Pantouvaki, J. Van Campenhout, D. Korn, K. Komorowska, P. Dumon, Y. Li, P. Verheyen, P. Absil, L. Alloatti, D. Hillerkuss, J. Leuthold, R. Baets, and W. Bogaerts, “Performance tradeoff between lateral and interdigitated doping patterns for high speed carrier-depletion based silicon modulators,” Opt. Express20(12), 12926–12938 (2012).
[CrossRef] [PubMed]

J. C. Rosenberg, W. M. J. Green, S. Assefa, D. M. Gill, T. Barwicz, M. Yang, S. M. Shank, and Y. A. Vlasov, “A 25 Gbps silicon microring modulator based on an interleaved junction,” Opt. Express20(24), 26411–26423 (2012).
[CrossRef]

2011

N. Hattasan, A. Gassenq, L. Cerutti, J.-B. Rodriguez, E. Tournie, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Photon. Technol. Lett.23(23), 1760–1762 (2011).
[CrossRef]

R. Shankar, R. Leijssen, I. Bulu, and M. Lončar, “Mid-infrared photonic crystal cavities in silicon,” Opt. Express19(6), 5579–5586 (2011).
[CrossRef] [PubMed]

R. K. W. Lau, M. Ménard, Y. Okawachi, M. A. Foster, A. C. Turner-Foster, R. Salem, M. Lipson, and A. L. Gaeta, “Continuous-wave mid-infrared frequency conversion in silicon nanowaveguides,” Opt. Lett.36(7), 1263–1265 (2011).
[CrossRef] [PubMed]

G. Z. Mashanovich, M. M. Milošević, M. Nedeljkovic, N. Owens, B. Xiong, E. J. Teo, and Y. Hu, “Low loss silicon waveguides for the mid-infrared,” Opt. Express19(8), 7112–7119 (2011).
[CrossRef] [PubMed]

D. Weidmann, T. Tsai, N. A. Macleod, and G. Wysocki, “Atmospheric observations of multiple molecular species using ultra-high-resolution external cavity quantum cascade laser heterodyne radiometry,” Opt. Lett.36(11), 1951–1953 (2011).
[CrossRef] [PubMed]

D. J. Thomson, F. Y. Gardes, Y. Hu, G. Mashanovich, M. Fournier, P. Grosse, J.-M. Fedeli, and G. T. Reed, “High contrast 40Gbit/s optical modulation in silicon,” Opt. Express19(12), 11507–11516 (2011).
[CrossRef] [PubMed]

F. Li, S. D. Jackson, C. Grillet, E. Magi, D. Hudson, S. J. Madden, Y. Moghe, C. O’Brien, A. Read, S. G. Duvall, P. Atanackovic, B. J. Eggleton, and D. J. Moss, “Low propagation loss silicon-on-sapphire waveguides for the mid-infrared,” Opt. Express19(16), 15212–15220 (2011).
[CrossRef] [PubMed]

B. Kuyken, X. Liu, R. M. Osgood, R. Baets, G. Roelkens, and W. M. J. Green, “Mid-infrared to telecom-band supercontinuum generation in highly nonlinear silicon-on-insulator wire waveguides,” Opt. Express19(21), 20172–20181 (2011).
[CrossRef] [PubMed]

A. Brimont, D. J. Thomson, P. Sanchis, J. Herrera, F. Y. Gardes, J. M. Fedeli, G. T. Reed, and J. Martí, “High speed silicon electro-optical modulators enhanced via slow light propagation,” Opt. Express19(21), 20876–20885 (2011).
[CrossRef] [PubMed]

B. Kuyken, X. Liu, G. Roelkens, R. Baets, R. M. Osgood, and W. M. J. Green, “50 dB parametric on-chip gain in silicon photonic wires,” Opt. Lett.36(22), 4401–4403 (2011).
[CrossRef] [PubMed]

M. Nedeljkovic, R. Soref, and G. Z. Mashanovich, “Free-carrier electro-refraction and electro-absorption modulation predictions for silicon over the 1-14μm infrared wavelength range,” IEEE Photon. J.3(6), 1171–1180 (2011).
[CrossRef]

2010

S. Zlatanovic, J. S. Park, S. Moro, J. M. C. Boggio, I. B. Divliansky, N. Alic, S. Mookherjea, and S. Radic, “Mid-infrared wavelength conversion in silicon waveguides using ultracompact telecom-band-derived pump source,” Nat. Photonics4(8), 561–564 (2010).
[CrossRef]

X. Liu, R. M. Osgood, Y. A. Vlasov, and W. M. J. Green, “Mid-infrared optical parametric amplifier using silicon nanophotonic waveguides,” Nat. Photonics4(8), 557–560 (2010).
[CrossRef]

R. Soref, “Mid-infrared photonics in silicon and germanium,” Nat. Photonics4(8), 495–497 (2010).
[CrossRef]

A. Spott, Y. Liu, T. Baehr-Jones, R. Ilic, and M. Hochberg, “Silicon waveguides and ring resonators at 5.5 μm,” Appl. Phys. Lett.97(21), 213501 (2010).
[CrossRef]

J. Van Campenhout, W. M. J. Green, S. Assefa, and Y. A. Vlasov, “Integrated NiSi waveguide heaters for CMOS-compatible silicon thermo-optic devices,” Opt. Lett.35(7), 1013–1015 (2010).
[CrossRef] [PubMed]

T. Baehr-Jones, A. Spott, R. Ilic, A. Spott, B. Penkov, W. Asher, and M. Hochberg, “Silicon-on-sapphire integrated waveguides for the mid-infrared,” Opt. Express18(12), 12127–12135 (2010).
[CrossRef] [PubMed]

2009

2008

R. Soref, “Towards silicon-based longwave integrated optoelectronics (LIO),” SPIE Proc.6898, 689809, 689809-13 (2008).
[CrossRef]

2007

2002

F. Capasso, R. Paiella, R. Martini, R. Colombelli, C. Gmachl, T. L. Myers, M. S. Taubman, R. M. Williams, C. G. Bethea, K. Unterrainer, H. Y. Hwang, D. L. Sivco, A. Y. Cho, A. M. Sergent, H. C. Liu, and E. A. Whittaker, “Quantum cascade lasers: Ultrahigh-speed operation, optical wireless communication, narrow linewidth, and far-infrared emission,” IEEE J. Quantum Electron.38(6), 511–532 (2002).
[CrossRef]

1987

R. A. Soref and B. R. Bennett, “Electrooptical effects in silicon,” IEEE J. Quantum Electron.23(1), 123–129 (1987).
[CrossRef]

Absil, P.

Alic, N.

D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P. P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett.24(4), 234–236 (2012).
[CrossRef]

S. Zlatanovic, J. S. Park, S. Moro, J. M. C. Boggio, I. B. Divliansky, N. Alic, S. Mookherjea, and S. Radic, “Mid-infrared wavelength conversion in silicon waveguides using ultracompact telecom-band-derived pump source,” Nat. Photonics4(8), 561–564 (2010).
[CrossRef]

Alloatti, L.

Asher, W.

Assefa, S.

Atanackovic, P.

Ayazi, A.

Baehr-Jones, T.

Baets, R.

Bagolini, A.

Barwicz, T.

Basak, J.

L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high speed applications,” Electron. Lett.43(22), 1196–1197 (2007).
[CrossRef]

Bennett, B. R.

R. A. Soref and B. R. Bennett, “Electrooptical effects in silicon,” IEEE J. Quantum Electron.23(1), 123–129 (1987).
[CrossRef]

Bergman, K.

N. Ophir, R. K. W. Lau, M. Menard, R. Salem, K. Padmaraju, Y. Okawachi, M. Lipson, A. L. Gaeta, and K. Bergman, “First demonstration of a 10-Gb/s RZ end-to-end four-wave-mixing based link at 1884 nm using silicon nanowaveguides,” IEEE Photon. Technol. Lett.24(4), 276–278 (2012).
[CrossRef]

Bethea, C. G.

F. Capasso, R. Paiella, R. Martini, R. Colombelli, C. Gmachl, T. L. Myers, M. S. Taubman, R. M. Williams, C. G. Bethea, K. Unterrainer, H. Y. Hwang, D. L. Sivco, A. Y. Cho, A. M. Sergent, H. C. Liu, and E. A. Whittaker, “Quantum cascade lasers: Ultrahigh-speed operation, optical wireless communication, narrow linewidth, and far-infrared emission,” IEEE J. Quantum Electron.38(6), 511–532 (2002).
[CrossRef]

Bettiol, A. A.

P. Y. Yang, S. Stankovic, J. Crnjanski, E. J. Teo, D. Thomson, A. A. Bettiol, M. B. H. Breese, W. Headley, C. Giusca, G. T. Reed, and G. Z. Mashanovich, “Silicon photonic waveguides for mid- and long-wave infrared region,” J. Mater. Sci.20, S159–S163 (2009).

Bogaerts, W.

Boggio, J. M. C.

S. Zlatanovic, J. S. Park, S. Moro, J. M. C. Boggio, I. B. Divliansky, N. Alic, S. Mookherjea, and S. Radic, “Mid-infrared wavelength conversion in silicon waveguides using ultracompact telecom-band-derived pump source,” Nat. Photonics4(8), 561–564 (2010).
[CrossRef]

Breese, M. B. H.

P. Y. Yang, S. Stankovic, J. Crnjanski, E. J. Teo, D. Thomson, A. A. Bettiol, M. B. H. Breese, W. Headley, C. Giusca, G. T. Reed, and G. Z. Mashanovich, “Silicon photonic waveguides for mid- and long-wave infrared region,” J. Mater. Sci.20, S159–S163 (2009).

Brimont, A.

Bulu, I.

Capasso, F.

F. Capasso, R. Paiella, R. Martini, R. Colombelli, C. Gmachl, T. L. Myers, M. S. Taubman, R. M. Williams, C. G. Bethea, K. Unterrainer, H. Y. Hwang, D. L. Sivco, A. Y. Cho, A. M. Sergent, H. C. Liu, and E. A. Whittaker, “Quantum cascade lasers: Ultrahigh-speed operation, optical wireless communication, narrow linewidth, and far-infrared emission,” IEEE J. Quantum Electron.38(6), 511–532 (2002).
[CrossRef]

Cerutti, L.

N. Hattasan, A. Gassenq, L. Cerutti, J.-B. Rodriguez, E. Tournie, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Photon. Technol. Lett.23(23), 1760–1762 (2011).
[CrossRef]

Chetrit, Y.

L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high speed applications,” Electron. Lett.43(22), 1196–1197 (2007).
[CrossRef]

Cho, A. Y.

F. Capasso, R. Paiella, R. Martini, R. Colombelli, C. Gmachl, T. L. Myers, M. S. Taubman, R. M. Williams, C. G. Bethea, K. Unterrainer, H. Y. Hwang, D. L. Sivco, A. Y. Cho, A. M. Sergent, H. C. Liu, and E. A. Whittaker, “Quantum cascade lasers: Ultrahigh-speed operation, optical wireless communication, narrow linewidth, and far-infrared emission,” IEEE J. Quantum Electron.38(6), 511–532 (2002).
[CrossRef]

Chu, T.

X. Xiao, X. Li, H. Xu, Y. Hu, K. Xiong, Z. Li, T. Chu, J. Yu, and Y. Yu, “44-Gb/s silicon microring modulators based on zigzag PN junctions,” IEEE Photon. Technol. Lett.24(19), 1712–1714 (2012).
[CrossRef]

Cohen, R.

L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high speed applications,” Electron. Lett.43(22), 1196–1197 (2007).
[CrossRef]

Colombelli, R.

F. Capasso, R. Paiella, R. Martini, R. Colombelli, C. Gmachl, T. L. Myers, M. S. Taubman, R. M. Williams, C. G. Bethea, K. Unterrainer, H. Y. Hwang, D. L. Sivco, A. Y. Cho, A. M. Sergent, H. C. Liu, and E. A. Whittaker, “Quantum cascade lasers: Ultrahigh-speed operation, optical wireless communication, narrow linewidth, and far-infrared emission,” IEEE J. Quantum Electron.38(6), 511–532 (2002).
[CrossRef]

Crnjanski, J.

P. Y. Yang, S. Stankovic, J. Crnjanski, E. J. Teo, D. Thomson, A. A. Bettiol, M. B. H. Breese, W. Headley, C. Giusca, G. T. Reed, and G. Z. Mashanovich, “Silicon photonic waveguides for mid- and long-wave infrared region,” J. Mater. Sci.20, S159–S163 (2009).

Ding, R.

Divliansky, I. B.

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N. Ophir, R. K. W. Lau, M. Menard, R. Salem, K. Padmaraju, Y. Okawachi, M. Lipson, A. L. Gaeta, and K. Bergman, “First demonstration of a 10-Gb/s RZ end-to-end four-wave-mixing based link at 1884 nm using silicon nanowaveguides,” IEEE Photon. Technol. Lett.24(4), 276–278 (2012).
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D. J. Thomson, F. Y. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. P. P. Kuo, E. Myslivets, N. Alic, S. Radic, G. Z. Mashanovich, and G. T. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett.24(4), 234–236 (2012).
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M. Nedeljkovic, R. Soref, and G. Z. Mashanovich, “Free-carrier electro-refraction and electro-absorption modulation predictions for silicon over the 1-14μm infrared wavelength range,” IEEE Photon. J.3(6), 1171–1180 (2011).
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N. Hattasan, A. Gassenq, L. Cerutti, J.-B. Rodriguez, E. Tournie, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Photon. Technol. Lett.23(23), 1760–1762 (2011).
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L. Liao, A. Liu, D. Rubin, J. Basak, Y. Chetrit, H. Nguyen, R. Cohen, N. Izhaky, and M. Paniccia, “40 Gbit/s silicon optical modulator for high speed applications,” Electron. Lett.43(22), 1196–1197 (2007).
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Streshinsky, M.

Taubman, M. S.

F. Capasso, R. Paiella, R. Martini, R. Colombelli, C. Gmachl, T. L. Myers, M. S. Taubman, R. M. Williams, C. G. Bethea, K. Unterrainer, H. Y. Hwang, D. L. Sivco, A. Y. Cho, A. M. Sergent, H. C. Liu, and E. A. Whittaker, “Quantum cascade lasers: Ultrahigh-speed operation, optical wireless communication, narrow linewidth, and far-infrared emission,” IEEE J. Quantum Electron.38(6), 511–532 (2002).
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Figures (4)

Fig. 1
Fig. 1

a) Optical microscope image of the MZI modulator, with labels of the electrical terminal functions. Inset: Magnified detail of the 50/50 y-junction, differential optical path imbalance, thermo-optic heaters, and RF signal inputs. b) Simulated intensity profile of the fundamental quasi-TE mode at λ = 2165nm. c) Cross-section schematic of the p-i-n diode phase-shifter waveguide active region.

Fig. 2
Fig. 2

Plots of normalized MZI transmission versus wavelength (a) and forward bias voltage at λ = 2160nm (b).

Fig. 3
Fig. 3

Optical eyeline diagrams of a PRBS 27-1 bit pattern taken at 0.5Gbps, 1Gbps, 2Gbps, and 3Gbps, with pre-emphasized electrical drive. The input laser is tuned to 2165nm.

Fig. 4
Fig. 4

Optical S21 of the MZI, with and without pre-emphasis. The voltage S21 response of the pre-emphasis electrical driver is shown in the inset.

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