Abstract

We demonstrate for the first time that a single compact, electrically contacted indium phosphide based microdisk heterogeneously integrated on a silicon–on–insulator waveguide can be used as both a high-speed modulator and photo detector. We demonstrate high-speed operation up to 10 Gb/s and present bit-error rate results of both operation modes.

© 2012 OSA

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    [CrossRef] [PubMed]
  4. J. Hofrichter, O. Raz, L. Liu, G. Morthier, F. Horst, P. Regreny, T. de Vries, H. J. S. Dorren, and B. J. Offrein, “All–optical wavelength conversion using mode switching in InP microdisc laser,” Electron. Lett.47(16), 927–929 (2011).
    [CrossRef]
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    [CrossRef]
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    [CrossRef]
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  12. B. Aslan, H. C. Liu, A. Bezinger, P. J. Poole, M. Buchanan, R. Rehm, and H. Schneider, “High responsivity, dual-band response and intraband avalanche multiplication in InGaAs/InP quantum well photodetectors,” Semicond. Sci. Technol.19(3), 442–445 (2004).
    [CrossRef]

2011 (1)

J. Hofrichter, O. Raz, L. Liu, G. Morthier, F. Horst, P. Regreny, T. de Vries, H. J. S. Dorren, and B. J. Offrein, “All–optical wavelength conversion using mode switching in InP microdisc laser,” Electron. Lett.47(16), 927–929 (2011).
[CrossRef]

2010 (2)

L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. Van Thourhout, R. Baets, and G. Morthier, “An ultra-small, low-power, all-optical flip-flop memory on a silicon chip,” Nat. Photonics4(3), 182–187 (2010).
[CrossRef]

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. Van Veldhoven, R. Nötzel, and M. K. Smit, “InP/InGaAs Photodetector on SOI Photonic Circuitry,” IEEE Photon. Journal2(3), 299–305 (2010).
[CrossRef]

2008 (3)

2007 (3)

2005 (1)

2004 (1)

B. Aslan, H. C. Liu, A. Bezinger, P. J. Poole, M. Buchanan, R. Rehm, and H. Schneider, “High responsivity, dual-band response and intraband avalanche multiplication in InGaAs/InP quantum well photodetectors,” Semicond. Sci. Technol.19(3), 442–445 (2004).
[CrossRef]

Aslan, B.

B. Aslan, H. C. Liu, A. Bezinger, P. J. Poole, M. Buchanan, R. Rehm, and H. Schneider, “High responsivity, dual-band response and intraband avalanche multiplication in InGaAs/InP quantum well photodetectors,” Semicond. Sci. Technol.19(3), 442–445 (2004).
[CrossRef]

Baets, R.

Beals, M.

J. Liu, M. Beals, A. Pomerene, S. Bernadis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide–integrated ultralow–energy GeSi electro–absorption modulators,” Nat. Photonics2(7), 433–437 (2008).
[CrossRef]

Bernadis, S.

J. Liu, M. Beals, A. Pomerene, S. Bernadis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide–integrated ultralow–energy GeSi electro–absorption modulators,” Nat. Photonics2(7), 433–437 (2008).
[CrossRef]

Bezinger, A.

B. Aslan, H. C. Liu, A. Bezinger, P. J. Poole, M. Buchanan, R. Rehm, and H. Schneider, “High responsivity, dual-band response and intraband avalanche multiplication in InGaAs/InP quantum well photodetectors,” Semicond. Sci. Technol.19(3), 442–445 (2004).
[CrossRef]

Binetti, P. R. A.

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. Van Veldhoven, R. Nötzel, and M. K. Smit, “InP/InGaAs Photodetector on SOI Photonic Circuitry,” IEEE Photon. Journal2(3), 299–305 (2010).
[CrossRef]

Bowers, J. E.

Buchanan, M.

B. Aslan, H. C. Liu, A. Bezinger, P. J. Poole, M. Buchanan, R. Rehm, and H. Schneider, “High responsivity, dual-band response and intraband avalanche multiplication in InGaAs/InP quantum well photodetectors,” Semicond. Sci. Technol.19(3), 442–445 (2004).
[CrossRef]

Chen, H.-W.

Cheng, J.

J. Liu, M. Beals, A. Pomerene, S. Bernadis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide–integrated ultralow–energy GeSi electro–absorption modulators,” Nat. Photonics2(7), 433–437 (2008).
[CrossRef]

Christiaens, I.

De Mesel, K.

de Vries, T.

J. Hofrichter, O. Raz, L. Liu, G. Morthier, F. Horst, P. Regreny, T. de Vries, H. J. S. Dorren, and B. J. Offrein, “All–optical wavelength conversion using mode switching in InP microdisc laser,” Electron. Lett.47(16), 927–929 (2011).
[CrossRef]

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. Van Veldhoven, R. Nötzel, and M. K. Smit, “InP/InGaAs Photodetector on SOI Photonic Circuitry,” IEEE Photon. Journal2(3), 299–305 (2010).
[CrossRef]

L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. Van Thourhout, R. Baets, and G. Morthier, “An ultra-small, low-power, all-optical flip-flop memory on a silicon chip,” Nat. Photonics4(3), 182–187 (2010).
[CrossRef]

Di Cioccio, L.

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. Van Veldhoven, R. Nötzel, and M. K. Smit, “InP/InGaAs Photodetector on SOI Photonic Circuitry,” IEEE Photon. Journal2(3), 299–305 (2010).
[CrossRef]

J. Van Campenhout, P. Rojo Romeo, P. Regreny, C. Seassal, D. Van Thourhout, S. Verstuyft, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, and R. Baets, “Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit,” Opt. Express15(11), 6744–6749 (2007).
[CrossRef] [PubMed]

Dorren, H. J. S.

J. Hofrichter, O. Raz, L. Liu, G. Morthier, F. Horst, P. Regreny, T. de Vries, H. J. S. Dorren, and B. J. Offrein, “All–optical wavelength conversion using mode switching in InP microdisc laser,” Electron. Lett.47(16), 927–929 (2011).
[CrossRef]

Fedeli, J.-M.

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. Van Veldhoven, R. Nötzel, and M. K. Smit, “InP/InGaAs Photodetector on SOI Photonic Circuitry,” IEEE Photon. Journal2(3), 299–305 (2010).
[CrossRef]

J. Van Campenhout, P. Rojo Romeo, P. Regreny, C. Seassal, D. Van Thourhout, S. Verstuyft, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, and R. Baets, “Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit,” Opt. Express15(11), 6744–6749 (2007).
[CrossRef] [PubMed]

Fédéli, J.-M.

Fidaner, O.

Geluk, E.-J.

L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. Van Thourhout, R. Baets, and G. Morthier, “An ultra-small, low-power, all-optical flip-flop memory on a silicon chip,” Nat. Photonics4(3), 182–187 (2010).
[CrossRef]

Harris, J. S.

Hofrichter, J.

J. Hofrichter, O. Raz, L. Liu, G. Morthier, F. Horst, P. Regreny, T. de Vries, H. J. S. Dorren, and B. J. Offrein, “All–optical wavelength conversion using mode switching in InP microdisc laser,” Electron. Lett.47(16), 927–929 (2011).
[CrossRef]

Horst, F.

J. Hofrichter, O. Raz, L. Liu, G. Morthier, F. Horst, P. Regreny, T. de Vries, H. J. S. Dorren, and B. J. Offrein, “All–optical wavelength conversion using mode switching in InP microdisc laser,” Electron. Lett.47(16), 927–929 (2011).
[CrossRef]

Huybrechts, K.

L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. Van Thourhout, R. Baets, and G. Morthier, “An ultra-small, low-power, all-optical flip-flop memory on a silicon chip,” Nat. Photonics4(3), 182–187 (2010).
[CrossRef]

Kamins, T. I.

Kimerling, L. C.

J. Liu, M. Beals, A. Pomerene, S. Bernadis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide–integrated ultralow–energy GeSi electro–absorption modulators,” Nat. Photonics2(7), 433–437 (2008).
[CrossRef]

Kumar, R.

L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. Van Thourhout, R. Baets, and G. Morthier, “An ultra-small, low-power, all-optical flip-flop memory on a silicon chip,” Nat. Photonics4(3), 182–187 (2010).
[CrossRef]

Kuo, Y.-H.

Lagahe, C.

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. Van Veldhoven, R. Nötzel, and M. K. Smit, “InP/InGaAs Photodetector on SOI Photonic Circuitry,” IEEE Photon. Journal2(3), 299–305 (2010).
[CrossRef]

J. Van Campenhout, P. Rojo Romeo, P. Regreny, C. Seassal, D. Van Thourhout, S. Verstuyft, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, and R. Baets, “Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit,” Opt. Express15(11), 6744–6749 (2007).
[CrossRef] [PubMed]

Leijtens, X. J. M.

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. Van Veldhoven, R. Nötzel, and M. K. Smit, “InP/InGaAs Photodetector on SOI Photonic Circuitry,” IEEE Photon. Journal2(3), 299–305 (2010).
[CrossRef]

Lipson, M.

Liu, H. C.

B. Aslan, H. C. Liu, A. Bezinger, P. J. Poole, M. Buchanan, R. Rehm, and H. Schneider, “High responsivity, dual-band response and intraband avalanche multiplication in InGaAs/InP quantum well photodetectors,” Semicond. Sci. Technol.19(3), 442–445 (2004).
[CrossRef]

Liu, J.

J. Liu, M. Beals, A. Pomerene, S. Bernadis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide–integrated ultralow–energy GeSi electro–absorption modulators,” Nat. Photonics2(7), 433–437 (2008).
[CrossRef]

Liu, L.

J. Hofrichter, O. Raz, L. Liu, G. Morthier, F. Horst, P. Regreny, T. de Vries, H. J. S. Dorren, and B. J. Offrein, “All–optical wavelength conversion using mode switching in InP microdisc laser,” Electron. Lett.47(16), 927–929 (2011).
[CrossRef]

L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. Van Thourhout, R. Baets, and G. Morthier, “An ultra-small, low-power, all-optical flip-flop memory on a silicon chip,” Nat. Photonics4(3), 182–187 (2010).
[CrossRef]

L. Liu, J. Van Campenhout, G. Roelkens, R. A. Soref, D. Van Thourhout, P. Rojo-Romeo, P. Regreny, C. Seassal, J.-M. Fédéli, and R. Baets, “Carrier-injection-based electro-optic modulator on silicon-on-insulator with a heterogeneously integrated III-V microdisk cavity,” Opt. Lett.33(21), 2518–2520 (2008).
[CrossRef] [PubMed]

Manipatruni, S.

Michel, J.

J. Liu, M. Beals, A. Pomerene, S. Bernadis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide–integrated ultralow–energy GeSi electro–absorption modulators,” Nat. Photonics2(7), 433–437 (2008).
[CrossRef]

Miller, D. A. B.

Morthier, G.

J. Hofrichter, O. Raz, L. Liu, G. Morthier, F. Horst, P. Regreny, T. de Vries, H. J. S. Dorren, and B. J. Offrein, “All–optical wavelength conversion using mode switching in InP microdisc laser,” Electron. Lett.47(16), 927–929 (2011).
[CrossRef]

L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. Van Thourhout, R. Baets, and G. Morthier, “An ultra-small, low-power, all-optical flip-flop memory on a silicon chip,” Nat. Photonics4(3), 182–187 (2010).
[CrossRef]

Nötzel, R.

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. Van Veldhoven, R. Nötzel, and M. K. Smit, “InP/InGaAs Photodetector on SOI Photonic Circuitry,” IEEE Photon. Journal2(3), 299–305 (2010).
[CrossRef]

Oei, Y. S.

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. Van Veldhoven, R. Nötzel, and M. K. Smit, “InP/InGaAs Photodetector on SOI Photonic Circuitry,” IEEE Photon. Journal2(3), 299–305 (2010).
[CrossRef]

Offrein, B. J.

J. Hofrichter, O. Raz, L. Liu, G. Morthier, F. Horst, P. Regreny, T. de Vries, H. J. S. Dorren, and B. J. Offrein, “All–optical wavelength conversion using mode switching in InP microdisc laser,” Electron. Lett.47(16), 927–929 (2011).
[CrossRef]

Pomerene, A.

J. Liu, M. Beals, A. Pomerene, S. Bernadis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide–integrated ultralow–energy GeSi electro–absorption modulators,” Nat. Photonics2(7), 433–437 (2008).
[CrossRef]

Poole, P. J.

B. Aslan, H. C. Liu, A. Bezinger, P. J. Poole, M. Buchanan, R. Rehm, and H. Schneider, “High responsivity, dual-band response and intraband avalanche multiplication in InGaAs/InP quantum well photodetectors,” Semicond. Sci. Technol.19(3), 442–445 (2004).
[CrossRef]

Raz, O.

J. Hofrichter, O. Raz, L. Liu, G. Morthier, F. Horst, P. Regreny, T. de Vries, H. J. S. Dorren, and B. J. Offrein, “All–optical wavelength conversion using mode switching in InP microdisc laser,” Electron. Lett.47(16), 927–929 (2011).
[CrossRef]

Regreny, P.

J. Hofrichter, O. Raz, L. Liu, G. Morthier, F. Horst, P. Regreny, T. de Vries, H. J. S. Dorren, and B. J. Offrein, “All–optical wavelength conversion using mode switching in InP microdisc laser,” Electron. Lett.47(16), 927–929 (2011).
[CrossRef]

L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. Van Thourhout, R. Baets, and G. Morthier, “An ultra-small, low-power, all-optical flip-flop memory on a silicon chip,” Nat. Photonics4(3), 182–187 (2010).
[CrossRef]

L. Liu, J. Van Campenhout, G. Roelkens, R. A. Soref, D. Van Thourhout, P. Rojo-Romeo, P. Regreny, C. Seassal, J.-M. Fédéli, and R. Baets, “Carrier-injection-based electro-optic modulator on silicon-on-insulator with a heterogeneously integrated III-V microdisk cavity,” Opt. Lett.33(21), 2518–2520 (2008).
[CrossRef] [PubMed]

J. Van Campenhout, P. Rojo Romeo, P. Regreny, C. Seassal, D. Van Thourhout, S. Verstuyft, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, and R. Baets, “Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit,” Opt. Express15(11), 6744–6749 (2007).
[CrossRef] [PubMed]

Rehm, R.

B. Aslan, H. C. Liu, A. Bezinger, P. J. Poole, M. Buchanan, R. Rehm, and H. Schneider, “High responsivity, dual-band response and intraband avalanche multiplication in InGaAs/InP quantum well photodetectors,” Semicond. Sci. Technol.19(3), 442–445 (2004).
[CrossRef]

Roelkens, G.

Rojo Romeo, P.

Rojo-Romeo, P.

Roth, J. E.

Schaevitz, R. K.

Schmidt, B.

Schneider, H.

B. Aslan, H. C. Liu, A. Bezinger, P. J. Poole, M. Buchanan, R. Rehm, and H. Schneider, “High responsivity, dual-band response and intraband avalanche multiplication in InGaAs/InP quantum well photodetectors,” Semicond. Sci. Technol.19(3), 442–445 (2004).
[CrossRef]

Seassal, C.

Shakya, J.

Smit, M. K.

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. Van Veldhoven, R. Nötzel, and M. K. Smit, “InP/InGaAs Photodetector on SOI Photonic Circuitry,” IEEE Photon. Journal2(3), 299–305 (2010).
[CrossRef]

Soref, R. A.

Spuesens, T.

L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. Van Thourhout, R. Baets, and G. Morthier, “An ultra-small, low-power, all-optical flip-flop memory on a silicon chip,” Nat. Photonics4(3), 182–187 (2010).
[CrossRef]

Sun, R.

J. Liu, M. Beals, A. Pomerene, S. Bernadis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide–integrated ultralow–energy GeSi electro–absorption modulators,” Nat. Photonics2(7), 433–437 (2008).
[CrossRef]

Van Campenhout, J.

Van Thourhout, D.

L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. Van Thourhout, R. Baets, and G. Morthier, “An ultra-small, low-power, all-optical flip-flop memory on a silicon chip,” Nat. Photonics4(3), 182–187 (2010).
[CrossRef]

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. Van Veldhoven, R. Nötzel, and M. K. Smit, “InP/InGaAs Photodetector on SOI Photonic Circuitry,” IEEE Photon. Journal2(3), 299–305 (2010).
[CrossRef]

L. Liu, J. Van Campenhout, G. Roelkens, R. A. Soref, D. Van Thourhout, P. Rojo-Romeo, P. Regreny, C. Seassal, J.-M. Fédéli, and R. Baets, “Carrier-injection-based electro-optic modulator on silicon-on-insulator with a heterogeneously integrated III-V microdisk cavity,” Opt. Lett.33(21), 2518–2520 (2008).
[CrossRef] [PubMed]

J. Van Campenhout, P. Rojo Romeo, P. Regreny, C. Seassal, D. Van Thourhout, S. Verstuyft, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, and R. Baets, “Electrically pumped InP-based microdisk lasers integrated with a nanophotonic silicon-on-insulator waveguide circuit,” Opt. Express15(11), 6744–6749 (2007).
[CrossRef] [PubMed]

Van Throurhout, D.

Van Veldhoven, P. J.

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. Van Veldhoven, R. Nötzel, and M. K. Smit, “InP/InGaAs Photodetector on SOI Photonic Circuitry,” IEEE Photon. Journal2(3), 299–305 (2010).
[CrossRef]

Verstuyft, S.

Xu, Q.

Electron. Lett. (1)

J. Hofrichter, O. Raz, L. Liu, G. Morthier, F. Horst, P. Regreny, T. de Vries, H. J. S. Dorren, and B. J. Offrein, “All–optical wavelength conversion using mode switching in InP microdisc laser,” Electron. Lett.47(16), 927–929 (2011).
[CrossRef]

IEEE Photon. Journal (1)

P. R. A. Binetti, X. J. M. Leijtens, T. de Vries, Y. S. Oei, L. Di Cioccio, J.-M. Fedeli, C. Lagahe, J. Van Campenhout, D. Van Thourhout, P. J. Van Veldhoven, R. Nötzel, and M. K. Smit, “InP/InGaAs Photodetector on SOI Photonic Circuitry,” IEEE Photon. Journal2(3), 299–305 (2010).
[CrossRef]

J. Lightwave Technol. (1)

Nat. Photonics (2)

J. Liu, M. Beals, A. Pomerene, S. Bernadis, R. Sun, J. Cheng, L. C. Kimerling, and J. Michel, “Waveguide–integrated ultralow–energy GeSi electro–absorption modulators,” Nat. Photonics2(7), 433–437 (2008).
[CrossRef]

L. Liu, R. Kumar, K. Huybrechts, T. Spuesens, G. Roelkens, E.-J. Geluk, T. de Vries, P. Regreny, D. Van Thourhout, R. Baets, and G. Morthier, “An ultra-small, low-power, all-optical flip-flop memory on a silicon chip,” Nat. Photonics4(3), 182–187 (2010).
[CrossRef]

Opt. Express (4)

Opt. Lett. (1)

Semicond. Sci. Technol. (1)

B. Aslan, H. C. Liu, A. Bezinger, P. J. Poole, M. Buchanan, R. Rehm, and H. Schneider, “High responsivity, dual-band response and intraband avalanche multiplication in InGaAs/InP quantum well photodetectors,” Semicond. Sci. Technol.19(3), 442–445 (2004).
[CrossRef]

Other (1)

O. Raz, L. Liu, R. Kumar, G. Morthier, P. Regreny, and H. J. S. Dorren, “A single InP membrane disc cavity for both transmission and detection of 10Gb/s signals in on chip interconnects,” presented at the 36th European Conference on Optical Communication (ECOC 2010), Paper 2.12, Torino, Italy, Sept. 2010.

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Figures (6)

Fig. 1
Fig. 1

Device structure of the InP microdisk heterogeneously integrated on an SOI waveguide. (a) Schematic view of the device structure. (b) FIB-cross section through the center of the device.

Fig. 2
Fig. 2

(a) Static electrical characteristics of the InP microdisk with and without light in the waveguide. The image also displays the dark IV-curves for more than 30 devices on the same chip. (b) Static optical modulation characteristics of the InP microdisk. Transmission characteristics of one device for several negative bias voltages.

Fig. 3
Fig. 3

Eye diagrams for (a) 2.5, (b) 5.0 and (d) 10 Gb/s and a pattern length of 231 – 1. Figure 2(c) shows the measurements at 10 Gb/s and a reduced pattern length of 27 – 1.

Fig. 4
Fig. 4

High-speed measurements of the InP microdisk used as a modulator. (a) Small-signal S21 parameter measurements. (b) Bit–error rate measurements of the InP microdisk modulator and a commercial modulator with bit rates of 2.5, 5.0 and 10.0 Gb/s for different NRZ-PRBS lengths.

Fig. 5
Fig. 5

(a) Spectral response of the photocurrent generated in the device under external illumination. (b) Spectral responsivity plot. The operation point for the high-speed experiments below was 1555.6 nm and −1.7V.

Fig. 6
Fig. 6

Dynamic characteristics of the InP microdisk used as photo detector: Bit-error rate measurements at data rates of 2.5, 5.0 and 10.0 Gb/s.

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