Abstract

Electrically-driven Mach-Zehnder interferometer type InGaAsP photonic-wire optical switches have been demonstrated using a III-V-on-insulator structure bonded on a thermally oxidized Si with an Al2O3/InP bonding interfacial layer which enables strong wafer bonding and low propagation loss. Lateral p-i-n junctions in the InGaAsP photonic-wire waveguides were formed by using ion implantation for changing refractive index in the InGaAsP waveguide through carrier injection. Optical switching with 10 dB extinction ratio was achieved with driving current of 200 µA which is approximately 10 times smaller than that of Si photonic-wire optical switch owing to larger free-carrier effect in InGaAsP than that in Si.

© 2012 OSA

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2011 (2)

M. Yokoyama, R. Iida, S. H. Kim, N. Taoka, Y. Urabe, H. Takagi, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, and S. Takagi, “Sub-10-nm extremely thin body InGaAs-on-insulator MOSFETs on Si wafers with ultrathin Al2O3 buried oxide layers,” IEEE Electron Device Lett.32(9), 1218–1220 (2011).
[CrossRef]

T. Alasaarela, D. Korn, L. Alloatti, A. Säynätjoki, A. Tervonen, R. Palmer, J. Leuthold, W. Freude, and S. Honkanen, “Reduced propagation loss in silicon strip and slot waveguides coated by atomic layer deposition,” Opt. Express19(12), 11529–11538 (2011).
[CrossRef] [PubMed]

2009 (1)

M. Takenaka, M. Yokoyama, M. Sugiyama, Y. Nakano, and S. Takagi, “InGaAsP photonic wire based ultrasmall arrayed waveguide grating multiplexer on Si wafer,” Appl. Phys. Express2(12), 122201 (2009).
[CrossRef]

2008 (3)

Y. Xuan, Y. Q. Wu, and P. D. Ye, “High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm,” IEEE Electron Device Lett.29(4), 294–296 (2008).
[CrossRef]

G. R. Zhou, M. W. Geis, S. J. Spector, F. Gan, M. E. Grein, R. T. Schulein, J. S. Orcutt, J. U. Yoon, D. M. Lennon, T. M. Lyszczarz, E. P. Ippen, and F. X. Kärtner, “Effect of carrier lifetime on forward-biased silicon Mach-Zehnder modulators,” Opt. Express16(8), 5218–5226 (2008).
[CrossRef] [PubMed]

T. D. Lin, H. C. Chiu, P. Chang, L. T. Tung, C. P. Chen, and M. Hong, aJ. Kwo, W. Tsai, and Y. C. Wang, “High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3/Ga2O3(Gd2O3) as gate dielectrics,” Appl. Phys. Lett.93, 033516 (2008).

T. D. Lin, H. C. Chiu, P. Chang, L. T. Tung, C. P. Chen, and M. Hong, aJ. Kwo, W. Tsai, and Y. C. Wang, “High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3/Ga2O3(Gd2O3) as gate dielectrics,” Appl. Phys. Lett.93, 033516 (2008).

2007 (3)

2004 (4)

P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H.-J. L. Gossmann, M. Hong, K. K. Ng, and J. Bude, “Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition,” Appl. Phys. Lett.84(3), 434–436 (2004).
[CrossRef]

Y. Vlasov and S. McNab, “Losses in single-mode silicon-on-insulator strip waveguides and bends,” Opt. Express12(8), 1622–1631 (2004).
[CrossRef] [PubMed]

P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout, and R. Baets, “Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography,” IEEE Photon. Technol. Lett.16(5), 1328–1330 (2004).
[CrossRef]

Y. Barbarin, X. J. M. Leijtens, E. A. J. M. Bente, C. M. Louzao, J. R. Kooiman, and M. K. Smit, “Extremely small AWG demultiplexer fabricated on InP by using a double-etch process,” IEEE Photon. Technol. Lett.16(11), 2478–2480 (2004).
[CrossRef]

2001 (1)

1996 (1)

C. van Dam, L. H. Spiekman, F. P. G. M. van Ham, F. H. Groen, J. J. G. M. van der Tol, I. Moerman, W. W. Pascher, M. Hamacher, H. Heidrich, C. M. Weinert, and M. K. Smit, “Novel compact polarization converters based on ultra short bends,” IEEE Photon. Technol. Lett.8(10), 1346–1348 (1996).
[CrossRef]

1994 (1)

J. P. Weber, “Optimization of the carrier-induced effective index change in InGaAsP waveguides-application to tunable Bragg filters,” IEEE J. Quantum Electron.30(8), 1801–1816 (1994).
[CrossRef]

1991 (1)

G. V. Treyz, P. G. May, and J.-M. Halbout, “Silicon Mach–Zehnder waveguide interferometers based on the plasma dispersion effect,” Appl. Phys. Lett.59(7), 771–773 (1991).
[CrossRef]

1990 (1)

B. R. Bennett, R. A. Soref, and J. A. Del Alamo, “Carrier-induced change in refractive index of InP, GaAs, and InGaAsP,” IEEE J. Quantum Electron.26(1), 113–122 (1990).
[CrossRef]

1988 (1)

W. P. Maszara, G. Goetz, A. Caviglia, and J. B. McKitterick, “Bonding of silicon wafers for silicon-on-insulator,” J. Appl. Phys.64(10), 4943–4950 (1988).
[CrossRef]

1987 (1)

R. A. Soref and B. R. Bennett, “Electrooptical effects in silicon,” IEEE J. Quantum Electron.23(1), 123–129 (1987).
[CrossRef]

1964 (1)

F. Stern, “Dispersion of the index of refraction near the absorption edge of semiconductors,” Phys. Rev. A133, 1653–1664 (1964).

Alasaarela, T.

Alloatti, L.

Assefa, S.

Baets, R.

P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout, and R. Baets, “Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography,” IEEE Photon. Technol. Lett.16(5), 1328–1330 (2004).
[CrossRef]

Barbarin, Y.

Y. Barbarin, X. J. M. Leijtens, E. A. J. M. Bente, C. M. Louzao, J. R. Kooiman, and M. K. Smit, “Extremely small AWG demultiplexer fabricated on InP by using a double-etch process,” IEEE Photon. Technol. Lett.16(11), 2478–2480 (2004).
[CrossRef]

Beckx, S.

P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout, and R. Baets, “Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography,” IEEE Photon. Technol. Lett.16(5), 1328–1330 (2004).
[CrossRef]

Bennett, B. R.

B. R. Bennett, R. A. Soref, and J. A. Del Alamo, “Carrier-induced change in refractive index of InP, GaAs, and InGaAsP,” IEEE J. Quantum Electron.26(1), 113–122 (1990).
[CrossRef]

R. A. Soref and B. R. Bennett, “Electrooptical effects in silicon,” IEEE J. Quantum Electron.23(1), 123–129 (1987).
[CrossRef]

Bente, E. A. J. M.

Y. Barbarin, X. J. M. Leijtens, E. A. J. M. Bente, C. M. Louzao, J. R. Kooiman, and M. K. Smit, “Extremely small AWG demultiplexer fabricated on InP by using a double-etch process,” IEEE Photon. Technol. Lett.16(11), 2478–2480 (2004).
[CrossRef]

Bienstman, P.

P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout, and R. Baets, “Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography,” IEEE Photon. Technol. Lett.16(5), 1328–1330 (2004).
[CrossRef]

Bogaerts, W.

P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout, and R. Baets, “Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography,” IEEE Photon. Technol. Lett.16(5), 1328–1330 (2004).
[CrossRef]

Bude, J.

P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H.-J. L. Gossmann, M. Hong, K. K. Ng, and J. Bude, “Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition,” Appl. Phys. Lett.84(3), 434–436 (2004).
[CrossRef]

Campenhout, J. V.

Caviglia, A.

W. P. Maszara, G. Goetz, A. Caviglia, and J. B. McKitterick, “Bonding of silicon wafers for silicon-on-insulator,” J. Appl. Phys.64(10), 4943–4950 (1988).
[CrossRef]

Cerrina, F.

Chang, P.

T. D. Lin, H. C. Chiu, P. Chang, L. T. Tung, C. P. Chen, and M. Hong, aJ. Kwo, W. Tsai, and Y. C. Wang, “High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3/Ga2O3(Gd2O3) as gate dielectrics,” Appl. Phys. Lett.93, 033516 (2008).

Chen, C. P.

T. D. Lin, H. C. Chiu, P. Chang, L. T. Tung, C. P. Chen, and M. Hong, aJ. Kwo, W. Tsai, and Y. C. Wang, “High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3/Ga2O3(Gd2O3) as gate dielectrics,” Appl. Phys. Lett.93, 033516 (2008).

Chiu, H. C.

T. D. Lin, H. C. Chiu, P. Chang, L. T. Tung, C. P. Chen, and M. Hong, aJ. Kwo, W. Tsai, and Y. C. Wang, “High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3/Ga2O3(Gd2O3) as gate dielectrics,” Appl. Phys. Lett.93, 033516 (2008).

Del Alamo, J. A.

B. R. Bennett, R. A. Soref, and J. A. Del Alamo, “Carrier-induced change in refractive index of InP, GaAs, and InGaAsP,” IEEE J. Quantum Electron.26(1), 113–122 (1990).
[CrossRef]

Dumon, P.

P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout, and R. Baets, “Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography,” IEEE Photon. Technol. Lett.16(5), 1328–1330 (2004).
[CrossRef]

Freude, W.

Fukuhara, N.

M. Yokoyama, R. Iida, S. H. Kim, N. Taoka, Y. Urabe, H. Takagi, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, and S. Takagi, “Sub-10-nm extremely thin body InGaAs-on-insulator MOSFETs on Si wafers with ultrathin Al2O3 buried oxide layers,” IEEE Electron Device Lett.32(9), 1218–1220 (2011).
[CrossRef]

Gan, F.

Geis, M. W.

Goetz, G.

W. P. Maszara, G. Goetz, A. Caviglia, and J. B. McKitterick, “Bonding of silicon wafers for silicon-on-insulator,” J. Appl. Phys.64(10), 4943–4950 (1988).
[CrossRef]

Gossmann, H.-J. L.

P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H.-J. L. Gossmann, M. Hong, K. K. Ng, and J. Bude, “Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition,” Appl. Phys. Lett.84(3), 434–436 (2004).
[CrossRef]

Green, W. M. J.

Grein, M. E.

Groen, F. H.

C. van Dam, L. H. Spiekman, F. P. G. M. van Ham, F. H. Groen, J. J. G. M. van der Tol, I. Moerman, W. W. Pascher, M. Hamacher, H. Heidrich, C. M. Weinert, and M. K. Smit, “Novel compact polarization converters based on ultra short bends,” IEEE Photon. Technol. Lett.8(10), 1346–1348 (1996).
[CrossRef]

Halbout, J.-M.

G. V. Treyz, P. G. May, and J.-M. Halbout, “Silicon Mach–Zehnder waveguide interferometers based on the plasma dispersion effect,” Appl. Phys. Lett.59(7), 771–773 (1991).
[CrossRef]

Hamacher, M.

C. van Dam, L. H. Spiekman, F. P. G. M. van Ham, F. H. Groen, J. J. G. M. van der Tol, I. Moerman, W. W. Pascher, M. Hamacher, H. Heidrich, C. M. Weinert, and M. K. Smit, “Novel compact polarization converters based on ultra short bends,” IEEE Photon. Technol. Lett.8(10), 1346–1348 (1996).
[CrossRef]

Hata, M.

M. Yokoyama, R. Iida, S. H. Kim, N. Taoka, Y. Urabe, H. Takagi, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, and S. Takagi, “Sub-10-nm extremely thin body InGaAs-on-insulator MOSFETs on Si wafers with ultrathin Al2O3 buried oxide layers,” IEEE Electron Device Lett.32(9), 1218–1220 (2011).
[CrossRef]

Heidrich, H.

C. van Dam, L. H. Spiekman, F. P. G. M. van Ham, F. H. Groen, J. J. G. M. van der Tol, I. Moerman, W. W. Pascher, M. Hamacher, H. Heidrich, C. M. Weinert, and M. K. Smit, “Novel compact polarization converters based on ultra short bends,” IEEE Photon. Technol. Lett.8(10), 1346–1348 (1996).
[CrossRef]

Hong, M.

T. D. Lin, H. C. Chiu, P. Chang, L. T. Tung, C. P. Chen, and M. Hong, aJ. Kwo, W. Tsai, and Y. C. Wang, “High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3/Ga2O3(Gd2O3) as gate dielectrics,” Appl. Phys. Lett.93, 033516 (2008).

P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H.-J. L. Gossmann, M. Hong, K. K. Ng, and J. Bude, “Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition,” Appl. Phys. Lett.84(3), 434–436 (2004).
[CrossRef]

Honkanen, S.

Iida, R.

M. Yokoyama, R. Iida, S. H. Kim, N. Taoka, Y. Urabe, H. Takagi, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, and S. Takagi, “Sub-10-nm extremely thin body InGaAs-on-insulator MOSFETs on Si wafers with ultrathin Al2O3 buried oxide layers,” IEEE Electron Device Lett.32(9), 1218–1220 (2011).
[CrossRef]

Ippen, E. P.

Kärtner, F. X.

Kim, S. H.

M. Yokoyama, R. Iida, S. H. Kim, N. Taoka, Y. Urabe, H. Takagi, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, and S. Takagi, “Sub-10-nm extremely thin body InGaAs-on-insulator MOSFETs on Si wafers with ultrathin Al2O3 buried oxide layers,” IEEE Electron Device Lett.32(9), 1218–1220 (2011).
[CrossRef]

Kimerling, L. C.

Kooiman, J. R.

Y. Barbarin, X. J. M. Leijtens, E. A. J. M. Bente, C. M. Louzao, J. R. Kooiman, and M. K. Smit, “Extremely small AWG demultiplexer fabricated on InP by using a double-etch process,” IEEE Photon. Technol. Lett.16(11), 2478–2480 (2004).
[CrossRef]

Korn, D.

Kwo, J.

T. D. Lin, H. C. Chiu, P. Chang, L. T. Tung, C. P. Chen, and M. Hong, aJ. Kwo, W. Tsai, and Y. C. Wang, “High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3/Ga2O3(Gd2O3) as gate dielectrics,” Appl. Phys. Lett.93, 033516 (2008).

P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H.-J. L. Gossmann, M. Hong, K. K. Ng, and J. Bude, “Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition,” Appl. Phys. Lett.84(3), 434–436 (2004).
[CrossRef]

Lee, K. K.

Leijtens, X. J. M.

Y. Barbarin, X. J. M. Leijtens, E. A. J. M. Bente, C. M. Louzao, J. R. Kooiman, and M. K. Smit, “Extremely small AWG demultiplexer fabricated on InP by using a double-etch process,” IEEE Photon. Technol. Lett.16(11), 2478–2480 (2004).
[CrossRef]

Lennon, D. M.

Leuthold, J.

Lim, D. R.

Lin, T. D.

T. D. Lin, H. C. Chiu, P. Chang, L. T. Tung, C. P. Chen, and M. Hong, aJ. Kwo, W. Tsai, and Y. C. Wang, “High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3/Ga2O3(Gd2O3) as gate dielectrics,” Appl. Phys. Lett.93, 033516 (2008).

Louzao, C. M.

Y. Barbarin, X. J. M. Leijtens, E. A. J. M. Bente, C. M. Louzao, J. R. Kooiman, and M. K. Smit, “Extremely small AWG demultiplexer fabricated on InP by using a double-etch process,” IEEE Photon. Technol. Lett.16(11), 2478–2480 (2004).
[CrossRef]

Luyssaert, B.

P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout, and R. Baets, “Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography,” IEEE Photon. Technol. Lett.16(5), 1328–1330 (2004).
[CrossRef]

Lyszczarz, T. M.

Maszara, W. P.

W. P. Maszara, G. Goetz, A. Caviglia, and J. B. McKitterick, “Bonding of silicon wafers for silicon-on-insulator,” J. Appl. Phys.64(10), 4943–4950 (1988).
[CrossRef]

May, P. G.

G. V. Treyz, P. G. May, and J.-M. Halbout, “Silicon Mach–Zehnder waveguide interferometers based on the plasma dispersion effect,” Appl. Phys. Lett.59(7), 771–773 (1991).
[CrossRef]

McKitterick, J. B.

W. P. Maszara, G. Goetz, A. Caviglia, and J. B. McKitterick, “Bonding of silicon wafers for silicon-on-insulator,” J. Appl. Phys.64(10), 4943–4950 (1988).
[CrossRef]

McNab, S.

Moerman, I.

C. van Dam, L. H. Spiekman, F. P. G. M. van Ham, F. H. Groen, J. J. G. M. van der Tol, I. Moerman, W. W. Pascher, M. Hamacher, H. Heidrich, C. M. Weinert, and M. K. Smit, “Novel compact polarization converters based on ultra short bends,” IEEE Photon. Technol. Lett.8(10), 1346–1348 (1996).
[CrossRef]

Nakano, Y.

M. Yokoyama, R. Iida, S. H. Kim, N. Taoka, Y. Urabe, H. Takagi, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, and S. Takagi, “Sub-10-nm extremely thin body InGaAs-on-insulator MOSFETs on Si wafers with ultrathin Al2O3 buried oxide layers,” IEEE Electron Device Lett.32(9), 1218–1220 (2011).
[CrossRef]

M. Takenaka, M. Yokoyama, M. Sugiyama, Y. Nakano, and S. Takagi, “InGaAsP photonic wire based ultrasmall arrayed waveguide grating multiplexer on Si wafer,” Appl. Phys. Express2(12), 122201 (2009).
[CrossRef]

M. Takenaka and Y. Nakano, “InP photonic wire waveguide using InAlAs oxide cladding layer,” Opt. Express15(13), 8422–8427 (2007).
[CrossRef] [PubMed]

Ng, K. K.

P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H.-J. L. Gossmann, M. Hong, K. K. Ng, and J. Bude, “Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition,” Appl. Phys. Lett.84(3), 434–436 (2004).
[CrossRef]

Orcutt, J. S.

Palmer, R.

Pascher, W. W.

C. van Dam, L. H. Spiekman, F. P. G. M. van Ham, F. H. Groen, J. J. G. M. van der Tol, I. Moerman, W. W. Pascher, M. Hamacher, H. Heidrich, C. M. Weinert, and M. K. Smit, “Novel compact polarization converters based on ultra short bends,” IEEE Photon. Technol. Lett.8(10), 1346–1348 (1996).
[CrossRef]

Rooks, M. J.

Säynätjoki, A.

Schulein, R. T.

Sekaric, L.

Shin, J.

Smit, M. K.

Y. Barbarin, X. J. M. Leijtens, E. A. J. M. Bente, C. M. Louzao, J. R. Kooiman, and M. K. Smit, “Extremely small AWG demultiplexer fabricated on InP by using a double-etch process,” IEEE Photon. Technol. Lett.16(11), 2478–2480 (2004).
[CrossRef]

C. van Dam, L. H. Spiekman, F. P. G. M. van Ham, F. H. Groen, J. J. G. M. van der Tol, I. Moerman, W. W. Pascher, M. Hamacher, H. Heidrich, C. M. Weinert, and M. K. Smit, “Novel compact polarization converters based on ultra short bends,” IEEE Photon. Technol. Lett.8(10), 1346–1348 (1996).
[CrossRef]

Soref, R. A.

B. R. Bennett, R. A. Soref, and J. A. Del Alamo, “Carrier-induced change in refractive index of InP, GaAs, and InGaAsP,” IEEE J. Quantum Electron.26(1), 113–122 (1990).
[CrossRef]

R. A. Soref and B. R. Bennett, “Electrooptical effects in silicon,” IEEE J. Quantum Electron.23(1), 123–129 (1987).
[CrossRef]

Spector, S. J.

Spiekman, L. H.

C. van Dam, L. H. Spiekman, F. P. G. M. van Ham, F. H. Groen, J. J. G. M. van der Tol, I. Moerman, W. W. Pascher, M. Hamacher, H. Heidrich, C. M. Weinert, and M. K. Smit, “Novel compact polarization converters based on ultra short bends,” IEEE Photon. Technol. Lett.8(10), 1346–1348 (1996).
[CrossRef]

Stern, F.

F. Stern, “Dispersion of the index of refraction near the absorption edge of semiconductors,” Phys. Rev. A133, 1653–1664 (1964).

Sugiyama, M.

M. Yokoyama, R. Iida, S. H. Kim, N. Taoka, Y. Urabe, H. Takagi, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, and S. Takagi, “Sub-10-nm extremely thin body InGaAs-on-insulator MOSFETs on Si wafers with ultrathin Al2O3 buried oxide layers,” IEEE Electron Device Lett.32(9), 1218–1220 (2011).
[CrossRef]

M. Takenaka, M. Yokoyama, M. Sugiyama, Y. Nakano, and S. Takagi, “InGaAsP photonic wire based ultrasmall arrayed waveguide grating multiplexer on Si wafer,” Appl. Phys. Express2(12), 122201 (2009).
[CrossRef]

Taillaert, D.

P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout, and R. Baets, “Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography,” IEEE Photon. Technol. Lett.16(5), 1328–1330 (2004).
[CrossRef]

Takagi, H.

M. Yokoyama, R. Iida, S. H. Kim, N. Taoka, Y. Urabe, H. Takagi, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, and S. Takagi, “Sub-10-nm extremely thin body InGaAs-on-insulator MOSFETs on Si wafers with ultrathin Al2O3 buried oxide layers,” IEEE Electron Device Lett.32(9), 1218–1220 (2011).
[CrossRef]

Takagi, S.

M. Yokoyama, R. Iida, S. H. Kim, N. Taoka, Y. Urabe, H. Takagi, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, and S. Takagi, “Sub-10-nm extremely thin body InGaAs-on-insulator MOSFETs on Si wafers with ultrathin Al2O3 buried oxide layers,” IEEE Electron Device Lett.32(9), 1218–1220 (2011).
[CrossRef]

M. Takenaka, M. Yokoyama, M. Sugiyama, Y. Nakano, and S. Takagi, “InGaAsP photonic wire based ultrasmall arrayed waveguide grating multiplexer on Si wafer,” Appl. Phys. Express2(12), 122201 (2009).
[CrossRef]

Takenaka, M.

M. Yokoyama, R. Iida, S. H. Kim, N. Taoka, Y. Urabe, H. Takagi, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, and S. Takagi, “Sub-10-nm extremely thin body InGaAs-on-insulator MOSFETs on Si wafers with ultrathin Al2O3 buried oxide layers,” IEEE Electron Device Lett.32(9), 1218–1220 (2011).
[CrossRef]

M. Takenaka, M. Yokoyama, M. Sugiyama, Y. Nakano, and S. Takagi, “InGaAsP photonic wire based ultrasmall arrayed waveguide grating multiplexer on Si wafer,” Appl. Phys. Express2(12), 122201 (2009).
[CrossRef]

M. Takenaka and Y. Nakano, “InP photonic wire waveguide using InAlAs oxide cladding layer,” Opt. Express15(13), 8422–8427 (2007).
[CrossRef] [PubMed]

Taoka, N.

M. Yokoyama, R. Iida, S. H. Kim, N. Taoka, Y. Urabe, H. Takagi, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, and S. Takagi, “Sub-10-nm extremely thin body InGaAs-on-insulator MOSFETs on Si wafers with ultrathin Al2O3 buried oxide layers,” IEEE Electron Device Lett.32(9), 1218–1220 (2011).
[CrossRef]

Tervonen, A.

Treyz, G. V.

G. V. Treyz, P. G. May, and J.-M. Halbout, “Silicon Mach–Zehnder waveguide interferometers based on the plasma dispersion effect,” Appl. Phys. Lett.59(7), 771–773 (1991).
[CrossRef]

Tsai, W.

T. D. Lin, H. C. Chiu, P. Chang, L. T. Tung, C. P. Chen, and M. Hong, aJ. Kwo, W. Tsai, and Y. C. Wang, “High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3/Ga2O3(Gd2O3) as gate dielectrics,” Appl. Phys. Lett.93, 033516 (2008).

Tung, L. T.

T. D. Lin, H. C. Chiu, P. Chang, L. T. Tung, C. P. Chen, and M. Hong, aJ. Kwo, W. Tsai, and Y. C. Wang, “High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3/Ga2O3(Gd2O3) as gate dielectrics,” Appl. Phys. Lett.93, 033516 (2008).

Urabe, Y.

M. Yokoyama, R. Iida, S. H. Kim, N. Taoka, Y. Urabe, H. Takagi, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, and S. Takagi, “Sub-10-nm extremely thin body InGaAs-on-insulator MOSFETs on Si wafers with ultrathin Al2O3 buried oxide layers,” IEEE Electron Device Lett.32(9), 1218–1220 (2011).
[CrossRef]

Van Campenhout, J.

P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout, and R. Baets, “Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography,” IEEE Photon. Technol. Lett.16(5), 1328–1330 (2004).
[CrossRef]

van Dam, C.

C. van Dam, L. H. Spiekman, F. P. G. M. van Ham, F. H. Groen, J. J. G. M. van der Tol, I. Moerman, W. W. Pascher, M. Hamacher, H. Heidrich, C. M. Weinert, and M. K. Smit, “Novel compact polarization converters based on ultra short bends,” IEEE Photon. Technol. Lett.8(10), 1346–1348 (1996).
[CrossRef]

van der Tol, J. J. G. M.

C. van Dam, L. H. Spiekman, F. P. G. M. van Ham, F. H. Groen, J. J. G. M. van der Tol, I. Moerman, W. W. Pascher, M. Hamacher, H. Heidrich, C. M. Weinert, and M. K. Smit, “Novel compact polarization converters based on ultra short bends,” IEEE Photon. Technol. Lett.8(10), 1346–1348 (1996).
[CrossRef]

van Ham, F. P. G. M.

C. van Dam, L. H. Spiekman, F. P. G. M. van Ham, F. H. Groen, J. J. G. M. van der Tol, I. Moerman, W. W. Pascher, M. Hamacher, H. Heidrich, C. M. Weinert, and M. K. Smit, “Novel compact polarization converters based on ultra short bends,” IEEE Photon. Technol. Lett.8(10), 1346–1348 (1996).
[CrossRef]

Van Thourhout, D.

P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout, and R. Baets, “Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography,” IEEE Photon. Technol. Lett.16(5), 1328–1330 (2004).
[CrossRef]

Vlasov, Y.

Vlasov, Y. A.

Wang, Y. C.

T. D. Lin, H. C. Chiu, P. Chang, L. T. Tung, C. P. Chen, and M. Hong, aJ. Kwo, W. Tsai, and Y. C. Wang, “High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3/Ga2O3(Gd2O3) as gate dielectrics,” Appl. Phys. Lett.93, 033516 (2008).

Weber, J. P.

J. P. Weber, “Optimization of the carrier-induced effective index change in InGaAsP waveguides-application to tunable Bragg filters,” IEEE J. Quantum Electron.30(8), 1801–1816 (1994).
[CrossRef]

Weinert, C. M.

C. van Dam, L. H. Spiekman, F. P. G. M. van Ham, F. H. Groen, J. J. G. M. van der Tol, I. Moerman, W. W. Pascher, M. Hamacher, H. Heidrich, C. M. Weinert, and M. K. Smit, “Novel compact polarization converters based on ultra short bends,” IEEE Photon. Technol. Lett.8(10), 1346–1348 (1996).
[CrossRef]

Wiaux, V.

P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout, and R. Baets, “Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography,” IEEE Photon. Technol. Lett.16(5), 1328–1330 (2004).
[CrossRef]

Wilk, G. D.

P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H.-J. L. Gossmann, M. Hong, K. K. Ng, and J. Bude, “Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition,” Appl. Phys. Lett.84(3), 434–436 (2004).
[CrossRef]

Wouters, J.

P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout, and R. Baets, “Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography,” IEEE Photon. Technol. Lett.16(5), 1328–1330 (2004).
[CrossRef]

Wu, Y. Q.

Y. Xuan, Y. Q. Wu, and P. D. Ye, “High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm,” IEEE Electron Device Lett.29(4), 294–296 (2008).
[CrossRef]

Xuan, Y.

Y. Xuan, Y. Q. Wu, and P. D. Ye, “High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm,” IEEE Electron Device Lett.29(4), 294–296 (2008).
[CrossRef]

Yamada, H.

M. Yokoyama, R. Iida, S. H. Kim, N. Taoka, Y. Urabe, H. Takagi, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, and S. Takagi, “Sub-10-nm extremely thin body InGaAs-on-insulator MOSFETs on Si wafers with ultrathin Al2O3 buried oxide layers,” IEEE Electron Device Lett.32(9), 1218–1220 (2011).
[CrossRef]

Yang, B.

P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H.-J. L. Gossmann, M. Hong, K. K. Ng, and J. Bude, “Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition,” Appl. Phys. Lett.84(3), 434–436 (2004).
[CrossRef]

Yasuda, T.

M. Yokoyama, R. Iida, S. H. Kim, N. Taoka, Y. Urabe, H. Takagi, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, and S. Takagi, “Sub-10-nm extremely thin body InGaAs-on-insulator MOSFETs on Si wafers with ultrathin Al2O3 buried oxide layers,” IEEE Electron Device Lett.32(9), 1218–1220 (2011).
[CrossRef]

Ye, P. D.

Y. Xuan, Y. Q. Wu, and P. D. Ye, “High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm,” IEEE Electron Device Lett.29(4), 294–296 (2008).
[CrossRef]

P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H.-J. L. Gossmann, M. Hong, K. K. Ng, and J. Bude, “Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition,” Appl. Phys. Lett.84(3), 434–436 (2004).
[CrossRef]

Yokoyama, M.

M. Yokoyama, R. Iida, S. H. Kim, N. Taoka, Y. Urabe, H. Takagi, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, and S. Takagi, “Sub-10-nm extremely thin body InGaAs-on-insulator MOSFETs on Si wafers with ultrathin Al2O3 buried oxide layers,” IEEE Electron Device Lett.32(9), 1218–1220 (2011).
[CrossRef]

M. Takenaka, M. Yokoyama, M. Sugiyama, Y. Nakano, and S. Takagi, “InGaAsP photonic wire based ultrasmall arrayed waveguide grating multiplexer on Si wafer,” Appl. Phys. Express2(12), 122201 (2009).
[CrossRef]

Yoon, J. U.

Zhou, G. R.

Appl. Phys. Express (1)

M. Takenaka, M. Yokoyama, M. Sugiyama, Y. Nakano, and S. Takagi, “InGaAsP photonic wire based ultrasmall arrayed waveguide grating multiplexer on Si wafer,” Appl. Phys. Express2(12), 122201 (2009).
[CrossRef]

Appl. Phys. Lett. (3)

G. V. Treyz, P. G. May, and J.-M. Halbout, “Silicon Mach–Zehnder waveguide interferometers based on the plasma dispersion effect,” Appl. Phys. Lett.59(7), 771–773 (1991).
[CrossRef]

P. D. Ye, G. D. Wilk, B. Yang, J. Kwo, H.-J. L. Gossmann, M. Hong, K. K. Ng, and J. Bude, “Depletion-mode InGaAs metal-oxide-semiconductor field-effect transistor with oxide gate dielectric grown by atomic-layer deposition,” Appl. Phys. Lett.84(3), 434–436 (2004).
[CrossRef]

T. D. Lin, H. C. Chiu, P. Chang, L. T. Tung, C. P. Chen, and M. Hong, aJ. Kwo, W. Tsai, and Y. C. Wang, “High-performance self-aligned inversion-channel In0.53Ga0.47As metal-oxide-semiconductor field-effect-transistor with Al2O3/Ga2O3(Gd2O3) as gate dielectrics,” Appl. Phys. Lett.93, 033516 (2008).

IEEE Electron Device Lett. (2)

M. Yokoyama, R. Iida, S. H. Kim, N. Taoka, Y. Urabe, H. Takagi, T. Yasuda, H. Yamada, N. Fukuhara, M. Hata, M. Sugiyama, Y. Nakano, M. Takenaka, and S. Takagi, “Sub-10-nm extremely thin body InGaAs-on-insulator MOSFETs on Si wafers with ultrathin Al2O3 buried oxide layers,” IEEE Electron Device Lett.32(9), 1218–1220 (2011).
[CrossRef]

Y. Xuan, Y. Q. Wu, and P. D. Ye, “High-performance inversion-type enhancement-mode InGaAs MOSFET with maximum drain current exceeding 1 A/mm,” IEEE Electron Device Lett.29(4), 294–296 (2008).
[CrossRef]

IEEE J. Quantum Electron. (3)

R. A. Soref and B. R. Bennett, “Electrooptical effects in silicon,” IEEE J. Quantum Electron.23(1), 123–129 (1987).
[CrossRef]

B. R. Bennett, R. A. Soref, and J. A. Del Alamo, “Carrier-induced change in refractive index of InP, GaAs, and InGaAsP,” IEEE J. Quantum Electron.26(1), 113–122 (1990).
[CrossRef]

J. P. Weber, “Optimization of the carrier-induced effective index change in InGaAsP waveguides-application to tunable Bragg filters,” IEEE J. Quantum Electron.30(8), 1801–1816 (1994).
[CrossRef]

IEEE Photon. Technol. Lett. (3)

P. Dumon, W. Bogaerts, V. Wiaux, J. Wouters, S. Beckx, J. Van Campenhout, D. Taillaert, B. Luyssaert, P. Bienstman, D. Van Thourhout, and R. Baets, “Low-loss SOI photonic wires and ring resonators fabricated with deep UV lithography,” IEEE Photon. Technol. Lett.16(5), 1328–1330 (2004).
[CrossRef]

Y. Barbarin, X. J. M. Leijtens, E. A. J. M. Bente, C. M. Louzao, J. R. Kooiman, and M. K. Smit, “Extremely small AWG demultiplexer fabricated on InP by using a double-etch process,” IEEE Photon. Technol. Lett.16(11), 2478–2480 (2004).
[CrossRef]

C. van Dam, L. H. Spiekman, F. P. G. M. van Ham, F. H. Groen, J. J. G. M. van der Tol, I. Moerman, W. W. Pascher, M. Hamacher, H. Heidrich, C. M. Weinert, and M. K. Smit, “Novel compact polarization converters based on ultra short bends,” IEEE Photon. Technol. Lett.8(10), 1346–1348 (1996).
[CrossRef]

J. Appl. Phys. (1)

W. P. Maszara, G. Goetz, A. Caviglia, and J. B. McKitterick, “Bonding of silicon wafers for silicon-on-insulator,” J. Appl. Phys.64(10), 4943–4950 (1988).
[CrossRef]

Opt. Express (6)

Opt. Lett. (1)

Phys. Rev. A (1)

F. Stern, “Dispersion of the index of refraction near the absorption edge of semiconductors,” Phys. Rev. A133, 1653–1664 (1964).

Other (4)

T. P. Pearsall, GaInAsP Alloy Semiconductors (Wiley, 1982).

D. Liang, A. W. Fang, D. C. Oakley, A. Napoleone, D. C. Chapman, C.-L. Chen, P. W. Juodawlkis, O. Raday, and J. E. Bowers, “150 mm InP-to-silicon direct wafer bonding for silicon photonic integrated circuits,” in Proceedings of 214th Electrochemical Society Meeting, paper 2220, Honolulu, USA (2008).

M. Takenaka, M. Yokoyama, M. Sugiyama, Y. Nakano, and S. Takagi, “Ultrasmall arrayed waveguide grating multiplexer using InP-based photonic wire waveguide on Si wafer for III-V CMOS photonics,” in proceedings of Optical Fiber Communication Conference, OThS5, San Diego, USA (2010).

International Technology Roadmap for Semiconductors (ITRS), http://www.itrs.net .

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Figures (10)

Fig. 1
Fig. 1

Concept of III-V CMOS photonics platform.

Fig. 2
Fig. 2

(a) Bandfilling effect and (b) calculated carrier-induced index change in InGaAsP (λg = 1.25 μm) and Si.

Fig. 3
Fig. 3

Wafer bonding process using ALD Al2O3 bonding interfacial layer.

Fig. 4
Fig. 4

(a) IR image of the bonded wafer and (b) surface energy of the bonded interfaces.

Fig. 5
Fig. 5

Cross sectional TEM image of the III-V-OI wafer (a) without 25-nm-thick InP layer and (b) with InP layer.

Fig. 6
Fig. 6

(a) Structures of waveguides and (b) propagation loss of each waveguide.

Fig. 7
Fig. 7

Fabrication process of optical switches.

Fig. 8
Fig. 8

(a) Top view and (b) output of the fabricated MMI coupler.

Fig. 9
Fig. 9

Plan-view photograph of InGaAsP photonic-wire optical switch.

Fig. 10
Fig. 10

(a) Images of output when current were injected and (b) measured output power.

Equations (6)

Equations on this page are rendered with MathJax. Learn more.

Δn= 6.9× 10 22 n E 2 { N m e +P( m hh 1/2 + m lh 1/2 m hh 3/2 + m lh 3/2 ) }.
{ m e =0.070.0308y m hh =0.60.218y+0.07 y 2 m lh =0.120.078+0.002 y 2 .
Δα(E)=C(y) E 1 E E g (y) { f v ( E a ) f c ( E b )1 }.
C(y)=(1.0041.318y+0.517 y 2 )× 10 5 [c m 1 e V 1/2 ].
Δ E g (N)= 0.13 ε s ( N N cr 1 ) 1/3 .
N cr =1.6× 10 24 ( m e 1.4 ε s ) 3 .

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