Abstract

We have developed a compact gate switch with monolithic integration of all-optical cross-phase modulation (XPM) in a Mach-Zehnder interferometer (MZI). XPM is caused by intersubband transition (ISBT) in InGaAs/AlAsSb coupled double quantum wells (CDQWs) by area-selective silicon ion implantation and rapid thermal annealing (RTA). While injecting pump light through a transverse electric/transverse magnetic (TE/TM) beam combiner, XPM is induced in one MZI arm and gating operation can be realized. The RTA condition is optimized, and the sample is annealed at 780 °C for 8 s with an implantation dose of 5 × 1013 cm–2. Dependence of XPM efficiency on the length of the implanted mesa is also analyzed, and there exists an optimum implantation length to fulfill both high efficiency of ISBT modulation and low loss of the probe and pump signals.

© 2012 OSA

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  1. H. Tsuchida, T. Simoyama, H. Ishikawa, T. Mozume, M. Nagase, and J. Kasai, “Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells,” Opt. Lett.32(7), 751–753 (2007).
    [CrossRef] [PubMed]
  2. G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B78(7), 075308 (2008).
    [CrossRef]
  3. T. Ogasawara, S. Gozu, T. Mozume, K. Akita, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast electron dynamics of intersubband excitation concerning crossphase modulation in an InGaAs/AlAs/AlAsSb coupled double quantum well,” Appl. Phys. Lett.98(25), 251104 (2011).
    [CrossRef]
  4. H. Ishikawa, Ultrafast All-Optical Signal Processing Devices (Wiley, 2008), chap. 5.
  5. R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett.91(22), 221115 (2007).
    [CrossRef]
  6. R. Akimoto, G. Cong, M. Nagase, T. Mozume, H. Tsuchida, T. Hasama, and H. Ishikawa, “All-optical demultiplexing from 160 to 40/80 Gb/s using Mach-Zehnder switches based on intersubband transition of InGaAs/AlAsSb coupled double quantum wells,” IEICE Electron ExpressE92(C), 187–193 (2009).
    [CrossRef]
  7. R. Akimoto, S. Gozu, T. Mozume, K. Akita, G. W. Cong, T. Hasama, and H. Ishikawa, “All-optical wavelength conversion at 160Gb/s by intersubband transition switches utilizing efficient XPM in InGaAs/AlAsSb coupled double quantum well,” in Proceedings of 35th European Conference on Optical Communication (VDE VERLAG GMBH, Berlin, 2009) 1.2.2.
  8. T. Kurosu, S. Namiki, R. Akimoto, H. Kuwatsuka, S. Sekiguchi, N. Yasuoka, K. Morito, H. Hasama, and H. Ishikawa, “Demonstration of 172-Gb/s optical time domain multiplexing and demultiplexing using integratable semiconductor devices,” IEEE Photon. Technol. Lett.22(19), 1416–1418 (2010).
    [CrossRef]
  9. R. Akimoto, S. Gozu, T. Mozume, and H. Ishikawa, “Monolithically integrated all-optical gate switch using intersubband transition in InGaAs/AlAsSb coupled double quantum wells,” Opt. Express19(14), 13386–13394 (2011).
    [PubMed]
  10. T. Kurosu, K. Tanizawa, S. Namiki, R. Akimoto, H. Kuwatsuka, T. Hasama, H. Ishikawa, T. Nakatogawa, K. Oyamada, Y. Tanaka, S. Ide, H. Onaka, and T. Asami, “Dynamic optical path switching of 172-Gbit/s OTDM ultra-high definition video signals using fast channel-identifiable clock recovery and integratable devices,” The Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC) (Los Angeles, California 2012) PDP5C.10.
  11. V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and B. S. Ooi, “Low-energy ion-implantation-induced quantum-well intermixing,” IEEE J. Sel. Top. Quantum Electron.8(4), 870–879 (2002).
    [CrossRef]
  12. G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical Cross-phase Modulation Generation by Ion Implantation in III-V Quantum Wells,” IEEE Photon. Technol. Lett.22(24), 1820–1822 (2010).
    [CrossRef]
  13. G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells,” Appl. Phys. Lett.96(10), 101901 (2010).
    [CrossRef]
  14. E. H. Li, Semiconductor Quantum Well Intermixing, Optoelectronic Properties of Semiconductors and Superlattices Vol. 8 (Gordon and Breach Science, Singapore, 2000) chaps. 1 and 7.
  15. S. Gozu, T. Mozume, R. Akimoto, K. Akita, G. Cong, and H. Ishikawa, “Cross phase modulation efficiency enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 coupled double quantum wells by tailoring interband transition wavelength,” Appl. Phys. Express2, 042201 (2009).
    [CrossRef]
  16. M. Nagase, Y. Shoji, S. Suda, K. Kintaka, H. Kawashima, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast all-optical gating operation using Michelson interferometer for hybrid integration of intersubband transition switch on Si platform,” IEEE Photon. Technol. Lett.23(24), 1884–1886 (2011).
    [CrossRef]

2011 (3)

T. Ogasawara, S. Gozu, T. Mozume, K. Akita, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast electron dynamics of intersubband excitation concerning crossphase modulation in an InGaAs/AlAs/AlAsSb coupled double quantum well,” Appl. Phys. Lett.98(25), 251104 (2011).
[CrossRef]

R. Akimoto, S. Gozu, T. Mozume, and H. Ishikawa, “Monolithically integrated all-optical gate switch using intersubband transition in InGaAs/AlAsSb coupled double quantum wells,” Opt. Express19(14), 13386–13394 (2011).
[PubMed]

M. Nagase, Y. Shoji, S. Suda, K. Kintaka, H. Kawashima, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast all-optical gating operation using Michelson interferometer for hybrid integration of intersubband transition switch on Si platform,” IEEE Photon. Technol. Lett.23(24), 1884–1886 (2011).
[CrossRef]

2010 (3)

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical Cross-phase Modulation Generation by Ion Implantation in III-V Quantum Wells,” IEEE Photon. Technol. Lett.22(24), 1820–1822 (2010).
[CrossRef]

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells,” Appl. Phys. Lett.96(10), 101901 (2010).
[CrossRef]

T. Kurosu, S. Namiki, R. Akimoto, H. Kuwatsuka, S. Sekiguchi, N. Yasuoka, K. Morito, H. Hasama, and H. Ishikawa, “Demonstration of 172-Gb/s optical time domain multiplexing and demultiplexing using integratable semiconductor devices,” IEEE Photon. Technol. Lett.22(19), 1416–1418 (2010).
[CrossRef]

2009 (2)

R. Akimoto, G. Cong, M. Nagase, T. Mozume, H. Tsuchida, T. Hasama, and H. Ishikawa, “All-optical demultiplexing from 160 to 40/80 Gb/s using Mach-Zehnder switches based on intersubband transition of InGaAs/AlAsSb coupled double quantum wells,” IEICE Electron ExpressE92(C), 187–193 (2009).
[CrossRef]

S. Gozu, T. Mozume, R. Akimoto, K. Akita, G. Cong, and H. Ishikawa, “Cross phase modulation efficiency enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 coupled double quantum wells by tailoring interband transition wavelength,” Appl. Phys. Express2, 042201 (2009).
[CrossRef]

2008 (1)

G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B78(7), 075308 (2008).
[CrossRef]

2007 (2)

H. Tsuchida, T. Simoyama, H. Ishikawa, T. Mozume, M. Nagase, and J. Kasai, “Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells,” Opt. Lett.32(7), 751–753 (2007).
[CrossRef] [PubMed]

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett.91(22), 221115 (2007).
[CrossRef]

2002 (1)

V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and B. S. Ooi, “Low-energy ion-implantation-induced quantum-well intermixing,” IEEE J. Sel. Top. Quantum Electron.8(4), 870–879 (2002).
[CrossRef]

Aimez, V.

V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and B. S. Ooi, “Low-energy ion-implantation-induced quantum-well intermixing,” IEEE J. Sel. Top. Quantum Electron.8(4), 870–879 (2002).
[CrossRef]

Akimoto, R.

R. Akimoto, S. Gozu, T. Mozume, and H. Ishikawa, “Monolithically integrated all-optical gate switch using intersubband transition in InGaAs/AlAsSb coupled double quantum wells,” Opt. Express19(14), 13386–13394 (2011).
[PubMed]

T. Ogasawara, S. Gozu, T. Mozume, K. Akita, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast electron dynamics of intersubband excitation concerning crossphase modulation in an InGaAs/AlAs/AlAsSb coupled double quantum well,” Appl. Phys. Lett.98(25), 251104 (2011).
[CrossRef]

M. Nagase, Y. Shoji, S. Suda, K. Kintaka, H. Kawashima, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast all-optical gating operation using Michelson interferometer for hybrid integration of intersubband transition switch on Si platform,” IEEE Photon. Technol. Lett.23(24), 1884–1886 (2011).
[CrossRef]

T. Kurosu, S. Namiki, R. Akimoto, H. Kuwatsuka, S. Sekiguchi, N. Yasuoka, K. Morito, H. Hasama, and H. Ishikawa, “Demonstration of 172-Gb/s optical time domain multiplexing and demultiplexing using integratable semiconductor devices,” IEEE Photon. Technol. Lett.22(19), 1416–1418 (2010).
[CrossRef]

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical Cross-phase Modulation Generation by Ion Implantation in III-V Quantum Wells,” IEEE Photon. Technol. Lett.22(24), 1820–1822 (2010).
[CrossRef]

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells,” Appl. Phys. Lett.96(10), 101901 (2010).
[CrossRef]

S. Gozu, T. Mozume, R. Akimoto, K. Akita, G. Cong, and H. Ishikawa, “Cross phase modulation efficiency enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 coupled double quantum wells by tailoring interband transition wavelength,” Appl. Phys. Express2, 042201 (2009).
[CrossRef]

R. Akimoto, G. Cong, M. Nagase, T. Mozume, H. Tsuchida, T. Hasama, and H. Ishikawa, “All-optical demultiplexing from 160 to 40/80 Gb/s using Mach-Zehnder switches based on intersubband transition of InGaAs/AlAsSb coupled double quantum wells,” IEICE Electron ExpressE92(C), 187–193 (2009).
[CrossRef]

G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B78(7), 075308 (2008).
[CrossRef]

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett.91(22), 221115 (2007).
[CrossRef]

Akita, K.

T. Ogasawara, S. Gozu, T. Mozume, K. Akita, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast electron dynamics of intersubband excitation concerning crossphase modulation in an InGaAs/AlAs/AlAsSb coupled double quantum well,” Appl. Phys. Lett.98(25), 251104 (2011).
[CrossRef]

S. Gozu, T. Mozume, R. Akimoto, K. Akita, G. Cong, and H. Ishikawa, “Cross phase modulation efficiency enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 coupled double quantum wells by tailoring interband transition wavelength,” Appl. Phys. Express2, 042201 (2009).
[CrossRef]

Beauvais, J.

V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and B. S. Ooi, “Low-energy ion-implantation-induced quantum-well intermixing,” IEEE J. Sel. Top. Quantum Electron.8(4), 870–879 (2002).
[CrossRef]

Beerens, J.

V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and B. S. Ooi, “Low-energy ion-implantation-induced quantum-well intermixing,” IEEE J. Sel. Top. Quantum Electron.8(4), 870–879 (2002).
[CrossRef]

Cong, G.

S. Gozu, T. Mozume, R. Akimoto, K. Akita, G. Cong, and H. Ishikawa, “Cross phase modulation efficiency enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 coupled double quantum wells by tailoring interband transition wavelength,” Appl. Phys. Express2, 042201 (2009).
[CrossRef]

R. Akimoto, G. Cong, M. Nagase, T. Mozume, H. Tsuchida, T. Hasama, and H. Ishikawa, “All-optical demultiplexing from 160 to 40/80 Gb/s using Mach-Zehnder switches based on intersubband transition of InGaAs/AlAsSb coupled double quantum wells,” IEICE Electron ExpressE92(C), 187–193 (2009).
[CrossRef]

Cong, G. W.

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical Cross-phase Modulation Generation by Ion Implantation in III-V Quantum Wells,” IEEE Photon. Technol. Lett.22(24), 1820–1822 (2010).
[CrossRef]

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells,” Appl. Phys. Lett.96(10), 101901 (2010).
[CrossRef]

G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B78(7), 075308 (2008).
[CrossRef]

Gozu, S.

T. Ogasawara, S. Gozu, T. Mozume, K. Akita, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast electron dynamics of intersubband excitation concerning crossphase modulation in an InGaAs/AlAs/AlAsSb coupled double quantum well,” Appl. Phys. Lett.98(25), 251104 (2011).
[CrossRef]

R. Akimoto, S. Gozu, T. Mozume, and H. Ishikawa, “Monolithically integrated all-optical gate switch using intersubband transition in InGaAs/AlAsSb coupled double quantum wells,” Opt. Express19(14), 13386–13394 (2011).
[PubMed]

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical Cross-phase Modulation Generation by Ion Implantation in III-V Quantum Wells,” IEEE Photon. Technol. Lett.22(24), 1820–1822 (2010).
[CrossRef]

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells,” Appl. Phys. Lett.96(10), 101901 (2010).
[CrossRef]

S. Gozu, T. Mozume, R. Akimoto, K. Akita, G. Cong, and H. Ishikawa, “Cross phase modulation efficiency enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 coupled double quantum wells by tailoring interband transition wavelength,” Appl. Phys. Express2, 042201 (2009).
[CrossRef]

Hasama, H.

T. Kurosu, S. Namiki, R. Akimoto, H. Kuwatsuka, S. Sekiguchi, N. Yasuoka, K. Morito, H. Hasama, and H. Ishikawa, “Demonstration of 172-Gb/s optical time domain multiplexing and demultiplexing using integratable semiconductor devices,” IEEE Photon. Technol. Lett.22(19), 1416–1418 (2010).
[CrossRef]

Hasama, T.

T. Ogasawara, S. Gozu, T. Mozume, K. Akita, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast electron dynamics of intersubband excitation concerning crossphase modulation in an InGaAs/AlAs/AlAsSb coupled double quantum well,” Appl. Phys. Lett.98(25), 251104 (2011).
[CrossRef]

M. Nagase, Y. Shoji, S. Suda, K. Kintaka, H. Kawashima, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast all-optical gating operation using Michelson interferometer for hybrid integration of intersubband transition switch on Si platform,” IEEE Photon. Technol. Lett.23(24), 1884–1886 (2011).
[CrossRef]

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells,” Appl. Phys. Lett.96(10), 101901 (2010).
[CrossRef]

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical Cross-phase Modulation Generation by Ion Implantation in III-V Quantum Wells,” IEEE Photon. Technol. Lett.22(24), 1820–1822 (2010).
[CrossRef]

R. Akimoto, G. Cong, M. Nagase, T. Mozume, H. Tsuchida, T. Hasama, and H. Ishikawa, “All-optical demultiplexing from 160 to 40/80 Gb/s using Mach-Zehnder switches based on intersubband transition of InGaAs/AlAsSb coupled double quantum wells,” IEICE Electron ExpressE92(C), 187–193 (2009).
[CrossRef]

G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B78(7), 075308 (2008).
[CrossRef]

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett.91(22), 221115 (2007).
[CrossRef]

Ishikawa, H.

T. Ogasawara, S. Gozu, T. Mozume, K. Akita, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast electron dynamics of intersubband excitation concerning crossphase modulation in an InGaAs/AlAs/AlAsSb coupled double quantum well,” Appl. Phys. Lett.98(25), 251104 (2011).
[CrossRef]

R. Akimoto, S. Gozu, T. Mozume, and H. Ishikawa, “Monolithically integrated all-optical gate switch using intersubband transition in InGaAs/AlAsSb coupled double quantum wells,” Opt. Express19(14), 13386–13394 (2011).
[PubMed]

M. Nagase, Y. Shoji, S. Suda, K. Kintaka, H. Kawashima, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast all-optical gating operation using Michelson interferometer for hybrid integration of intersubband transition switch on Si platform,” IEEE Photon. Technol. Lett.23(24), 1884–1886 (2011).
[CrossRef]

T. Kurosu, S. Namiki, R. Akimoto, H. Kuwatsuka, S. Sekiguchi, N. Yasuoka, K. Morito, H. Hasama, and H. Ishikawa, “Demonstration of 172-Gb/s optical time domain multiplexing and demultiplexing using integratable semiconductor devices,” IEEE Photon. Technol. Lett.22(19), 1416–1418 (2010).
[CrossRef]

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical Cross-phase Modulation Generation by Ion Implantation in III-V Quantum Wells,” IEEE Photon. Technol. Lett.22(24), 1820–1822 (2010).
[CrossRef]

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells,” Appl. Phys. Lett.96(10), 101901 (2010).
[CrossRef]

S. Gozu, T. Mozume, R. Akimoto, K. Akita, G. Cong, and H. Ishikawa, “Cross phase modulation efficiency enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 coupled double quantum wells by tailoring interband transition wavelength,” Appl. Phys. Express2, 042201 (2009).
[CrossRef]

R. Akimoto, G. Cong, M. Nagase, T. Mozume, H. Tsuchida, T. Hasama, and H. Ishikawa, “All-optical demultiplexing from 160 to 40/80 Gb/s using Mach-Zehnder switches based on intersubband transition of InGaAs/AlAsSb coupled double quantum wells,” IEICE Electron ExpressE92(C), 187–193 (2009).
[CrossRef]

G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B78(7), 075308 (2008).
[CrossRef]

H. Tsuchida, T. Simoyama, H. Ishikawa, T. Mozume, M. Nagase, and J. Kasai, “Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells,” Opt. Lett.32(7), 751–753 (2007).
[CrossRef] [PubMed]

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett.91(22), 221115 (2007).
[CrossRef]

Kasai, J.

Kawashima, H.

M. Nagase, Y. Shoji, S. Suda, K. Kintaka, H. Kawashima, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast all-optical gating operation using Michelson interferometer for hybrid integration of intersubband transition switch on Si platform,” IEEE Photon. Technol. Lett.23(24), 1884–1886 (2011).
[CrossRef]

Kintaka, K.

M. Nagase, Y. Shoji, S. Suda, K. Kintaka, H. Kawashima, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast all-optical gating operation using Michelson interferometer for hybrid integration of intersubband transition switch on Si platform,” IEEE Photon. Technol. Lett.23(24), 1884–1886 (2011).
[CrossRef]

Kurosu, T.

T. Kurosu, S. Namiki, R. Akimoto, H. Kuwatsuka, S. Sekiguchi, N. Yasuoka, K. Morito, H. Hasama, and H. Ishikawa, “Demonstration of 172-Gb/s optical time domain multiplexing and demultiplexing using integratable semiconductor devices,” IEEE Photon. Technol. Lett.22(19), 1416–1418 (2010).
[CrossRef]

Kuwatsuka, H.

T. Ogasawara, S. Gozu, T. Mozume, K. Akita, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast electron dynamics of intersubband excitation concerning crossphase modulation in an InGaAs/AlAs/AlAsSb coupled double quantum well,” Appl. Phys. Lett.98(25), 251104 (2011).
[CrossRef]

M. Nagase, Y. Shoji, S. Suda, K. Kintaka, H. Kawashima, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast all-optical gating operation using Michelson interferometer for hybrid integration of intersubband transition switch on Si platform,” IEEE Photon. Technol. Lett.23(24), 1884–1886 (2011).
[CrossRef]

T. Kurosu, S. Namiki, R. Akimoto, H. Kuwatsuka, S. Sekiguchi, N. Yasuoka, K. Morito, H. Hasama, and H. Ishikawa, “Demonstration of 172-Gb/s optical time domain multiplexing and demultiplexing using integratable semiconductor devices,” IEEE Photon. Technol. Lett.22(19), 1416–1418 (2010).
[CrossRef]

Lim, C. G.

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett.91(22), 221115 (2007).
[CrossRef]

Lim, H. S.

V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and B. S. Ooi, “Low-energy ion-implantation-induced quantum-well intermixing,” IEEE J. Sel. Top. Quantum Electron.8(4), 870–879 (2002).
[CrossRef]

Morito, K.

T. Kurosu, S. Namiki, R. Akimoto, H. Kuwatsuka, S. Sekiguchi, N. Yasuoka, K. Morito, H. Hasama, and H. Ishikawa, “Demonstration of 172-Gb/s optical time domain multiplexing and demultiplexing using integratable semiconductor devices,” IEEE Photon. Technol. Lett.22(19), 1416–1418 (2010).
[CrossRef]

Morris, D.

V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and B. S. Ooi, “Low-energy ion-implantation-induced quantum-well intermixing,” IEEE J. Sel. Top. Quantum Electron.8(4), 870–879 (2002).
[CrossRef]

Mozume, T.

R. Akimoto, S. Gozu, T. Mozume, and H. Ishikawa, “Monolithically integrated all-optical gate switch using intersubband transition in InGaAs/AlAsSb coupled double quantum wells,” Opt. Express19(14), 13386–13394 (2011).
[PubMed]

T. Ogasawara, S. Gozu, T. Mozume, K. Akita, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast electron dynamics of intersubband excitation concerning crossphase modulation in an InGaAs/AlAs/AlAsSb coupled double quantum well,” Appl. Phys. Lett.98(25), 251104 (2011).
[CrossRef]

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical Cross-phase Modulation Generation by Ion Implantation in III-V Quantum Wells,” IEEE Photon. Technol. Lett.22(24), 1820–1822 (2010).
[CrossRef]

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells,” Appl. Phys. Lett.96(10), 101901 (2010).
[CrossRef]

R. Akimoto, G. Cong, M. Nagase, T. Mozume, H. Tsuchida, T. Hasama, and H. Ishikawa, “All-optical demultiplexing from 160 to 40/80 Gb/s using Mach-Zehnder switches based on intersubband transition of InGaAs/AlAsSb coupled double quantum wells,” IEICE Electron ExpressE92(C), 187–193 (2009).
[CrossRef]

S. Gozu, T. Mozume, R. Akimoto, K. Akita, G. Cong, and H. Ishikawa, “Cross phase modulation efficiency enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 coupled double quantum wells by tailoring interband transition wavelength,” Appl. Phys. Express2, 042201 (2009).
[CrossRef]

G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B78(7), 075308 (2008).
[CrossRef]

H. Tsuchida, T. Simoyama, H. Ishikawa, T. Mozume, M. Nagase, and J. Kasai, “Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells,” Opt. Lett.32(7), 751–753 (2007).
[CrossRef] [PubMed]

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett.91(22), 221115 (2007).
[CrossRef]

Nagase, M.

M. Nagase, Y. Shoji, S. Suda, K. Kintaka, H. Kawashima, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast all-optical gating operation using Michelson interferometer for hybrid integration of intersubband transition switch on Si platform,” IEEE Photon. Technol. Lett.23(24), 1884–1886 (2011).
[CrossRef]

R. Akimoto, G. Cong, M. Nagase, T. Mozume, H. Tsuchida, T. Hasama, and H. Ishikawa, “All-optical demultiplexing from 160 to 40/80 Gb/s using Mach-Zehnder switches based on intersubband transition of InGaAs/AlAsSb coupled double quantum wells,” IEICE Electron ExpressE92(C), 187–193 (2009).
[CrossRef]

G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B78(7), 075308 (2008).
[CrossRef]

H. Tsuchida, T. Simoyama, H. Ishikawa, T. Mozume, M. Nagase, and J. Kasai, “Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells,” Opt. Lett.32(7), 751–753 (2007).
[CrossRef] [PubMed]

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett.91(22), 221115 (2007).
[CrossRef]

Namiki, S.

T. Kurosu, S. Namiki, R. Akimoto, H. Kuwatsuka, S. Sekiguchi, N. Yasuoka, K. Morito, H. Hasama, and H. Ishikawa, “Demonstration of 172-Gb/s optical time domain multiplexing and demultiplexing using integratable semiconductor devices,” IEEE Photon. Technol. Lett.22(19), 1416–1418 (2010).
[CrossRef]

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett.91(22), 221115 (2007).
[CrossRef]

Ogasawara, T.

T. Ogasawara, S. Gozu, T. Mozume, K. Akita, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast electron dynamics of intersubband excitation concerning crossphase modulation in an InGaAs/AlAs/AlAsSb coupled double quantum well,” Appl. Phys. Lett.98(25), 251104 (2011).
[CrossRef]

Ooi, B. S.

V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and B. S. Ooi, “Low-energy ion-implantation-induced quantum-well intermixing,” IEEE J. Sel. Top. Quantum Electron.8(4), 870–879 (2002).
[CrossRef]

Sekiguchi, S.

T. Kurosu, S. Namiki, R. Akimoto, H. Kuwatsuka, S. Sekiguchi, N. Yasuoka, K. Morito, H. Hasama, and H. Ishikawa, “Demonstration of 172-Gb/s optical time domain multiplexing and demultiplexing using integratable semiconductor devices,” IEEE Photon. Technol. Lett.22(19), 1416–1418 (2010).
[CrossRef]

Shoji, Y.

M. Nagase, Y. Shoji, S. Suda, K. Kintaka, H. Kawashima, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast all-optical gating operation using Michelson interferometer for hybrid integration of intersubband transition switch on Si platform,” IEEE Photon. Technol. Lett.23(24), 1884–1886 (2011).
[CrossRef]

Simoyama, T.

H. Tsuchida, T. Simoyama, H. Ishikawa, T. Mozume, M. Nagase, and J. Kasai, “Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells,” Opt. Lett.32(7), 751–753 (2007).
[CrossRef] [PubMed]

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett.91(22), 221115 (2007).
[CrossRef]

Suda, S.

M. Nagase, Y. Shoji, S. Suda, K. Kintaka, H. Kawashima, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast all-optical gating operation using Michelson interferometer for hybrid integration of intersubband transition switch on Si platform,” IEEE Photon. Technol. Lett.23(24), 1884–1886 (2011).
[CrossRef]

Tsuchida, H.

R. Akimoto, G. Cong, M. Nagase, T. Mozume, H. Tsuchida, T. Hasama, and H. Ishikawa, “All-optical demultiplexing from 160 to 40/80 Gb/s using Mach-Zehnder switches based on intersubband transition of InGaAs/AlAsSb coupled double quantum wells,” IEICE Electron ExpressE92(C), 187–193 (2009).
[CrossRef]

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett.91(22), 221115 (2007).
[CrossRef]

H. Tsuchida, T. Simoyama, H. Ishikawa, T. Mozume, M. Nagase, and J. Kasai, “Cross-phase-modulation-based wavelength conversion using intersubband transition in InGaAs/AlAs/AlAsSb coupled quantum wells,” Opt. Lett.32(7), 751–753 (2007).
[CrossRef] [PubMed]

Yasuoka, N.

T. Kurosu, S. Namiki, R. Akimoto, H. Kuwatsuka, S. Sekiguchi, N. Yasuoka, K. Morito, H. Hasama, and H. Ishikawa, “Demonstration of 172-Gb/s optical time domain multiplexing and demultiplexing using integratable semiconductor devices,” IEEE Photon. Technol. Lett.22(19), 1416–1418 (2010).
[CrossRef]

Appl. Phys. Express (1)

S. Gozu, T. Mozume, R. Akimoto, K. Akita, G. Cong, and H. Ishikawa, “Cross phase modulation efficiency enhancement in In0.8Ga0.2As /Al0.5Ga0.5As/ AlAs0.56Sb0.44 coupled double quantum wells by tailoring interband transition wavelength,” Appl. Phys. Express2, 042201 (2009).
[CrossRef]

Appl. Phys. Lett. (3)

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “Simultaneous generation of intersubband absorption and quantum well intermixing through silicon ion implantation in undoped InGaAs/AlAsSb coupled double quantum wells,” Appl. Phys. Lett.96(10), 101901 (2010).
[CrossRef]

T. Ogasawara, S. Gozu, T. Mozume, K. Akita, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast electron dynamics of intersubband excitation concerning crossphase modulation in an InGaAs/AlAs/AlAsSb coupled double quantum well,” Appl. Phys. Lett.98(25), 251104 (2011).
[CrossRef]

R. Akimoto, T. Simoyama, H. Tsuchida, S. Namiki, C. G. Lim, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical demultiplexing of 160- to 10-Gb/s signals with Mach-Zehnder interferometric switch utilizing intersubband transition in InGaAs/AlAs/AlAsSb quantum well,” Appl. Phys. Lett.91(22), 221115 (2007).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (1)

V. Aimez, J. Beauvais, J. Beerens, D. Morris, H. S. Lim, and B. S. Ooi, “Low-energy ion-implantation-induced quantum-well intermixing,” IEEE J. Sel. Top. Quantum Electron.8(4), 870–879 (2002).
[CrossRef]

IEEE Photon. Technol. Lett. (3)

G. W. Cong, R. Akimoto, S. Gozu, T. Mozume, T. Hasama, and H. Ishikawa, “All-optical Cross-phase Modulation Generation by Ion Implantation in III-V Quantum Wells,” IEEE Photon. Technol. Lett.22(24), 1820–1822 (2010).
[CrossRef]

M. Nagase, Y. Shoji, S. Suda, K. Kintaka, H. Kawashima, R. Akimoto, H. Kuwatsuka, T. Hasama, and H. Ishikawa, “Ultrafast all-optical gating operation using Michelson interferometer for hybrid integration of intersubband transition switch on Si platform,” IEEE Photon. Technol. Lett.23(24), 1884–1886 (2011).
[CrossRef]

T. Kurosu, S. Namiki, R. Akimoto, H. Kuwatsuka, S. Sekiguchi, N. Yasuoka, K. Morito, H. Hasama, and H. Ishikawa, “Demonstration of 172-Gb/s optical time domain multiplexing and demultiplexing using integratable semiconductor devices,” IEEE Photon. Technol. Lett.22(19), 1416–1418 (2010).
[CrossRef]

IEICE Electron Express (1)

R. Akimoto, G. Cong, M. Nagase, T. Mozume, H. Tsuchida, T. Hasama, and H. Ishikawa, “All-optical demultiplexing from 160 to 40/80 Gb/s using Mach-Zehnder switches based on intersubband transition of InGaAs/AlAsSb coupled double quantum wells,” IEICE Electron ExpressE92(C), 187–193 (2009).
[CrossRef]

Opt. Express (1)

Opt. Lett. (1)

Phys. Rev. B (1)

G. W. Cong, R. Akimoto, M. Nagase, T. Mozume, T. Hasama, and H. Ishikawa, “Mechanism of ultrafast modulation of the refraction index in photoexcited InxGa1-xAs/AlAsySb1-y quantum well waveguides,” Phys. Rev. B78(7), 075308 (2008).
[CrossRef]

Other (4)

H. Ishikawa, Ultrafast All-Optical Signal Processing Devices (Wiley, 2008), chap. 5.

T. Kurosu, K. Tanizawa, S. Namiki, R. Akimoto, H. Kuwatsuka, T. Hasama, H. Ishikawa, T. Nakatogawa, K. Oyamada, Y. Tanaka, S. Ide, H. Onaka, and T. Asami, “Dynamic optical path switching of 172-Gbit/s OTDM ultra-high definition video signals using fast channel-identifiable clock recovery and integratable devices,” The Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference (OFC/NFOEC) (Los Angeles, California 2012) PDP5C.10.

R. Akimoto, S. Gozu, T. Mozume, K. Akita, G. W. Cong, T. Hasama, and H. Ishikawa, “All-optical wavelength conversion at 160Gb/s by intersubband transition switches utilizing efficient XPM in InGaAs/AlAsSb coupled double quantum well,” in Proceedings of 35th European Conference on Optical Communication (VDE VERLAG GMBH, Berlin, 2009) 1.2.2.

E. H. Li, Semiconductor Quantum Well Intermixing, Optoelectronic Properties of Semiconductors and Superlattices Vol. 8 (Gordon and Breach Science, Singapore, 2000) chaps. 1 and 7.

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Figures (7)

Fig. 1
Fig. 1

(a) Cross-sectional SEM image (with CDQWs layer slightly etched by oxalic acid and hydrogen peroxide) and (b) transmittance property (TE polarization, at wavelength of 1545 nm) for MQW mesa (~2.5 μm wide and 1 mm long) undergoing RTA at different temperatures for 10 s.

Fig. 2
Fig. 2

(a) Transmittance property and (b) XPM efficiency for different implanted mesa length under RTA of 780°C for 8 s (dot: measurement, line: simulation).

Fig. 3
Fig. 3

(a) Schematic diagram of the monolithically integrated ISBT-MZI switch. AR: anti-reflection; MMI: multi-mode interference. (b) Microscope image of the fabricated chip for testing.

Fig. 4
Fig. 4

TE/TM beam combiner (directional coupler). (a) Schematic illustration, (b) cross-sectional SEM image, and (c) measured transmission spectra.

Fig. 5
Fig. 5

Signal transmittance as a function of the voltage applied to the phase bias control heater.

Fig. 6
Fig. 6

Output spectrum of TE probe light under TM pump. Inset: TE probe spectrum under TE pump.

Fig. 7
Fig. 7

Temporal profile of the gated TE probe light.

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