Abstract

Gallium arsenide has outstanding performance in optical communication devices for light source purposes. Different approaches have been done to realize the luminescence from GaAs matching the transmission window of optical fibers. Here we present the realization of quasi- temperature independent photoluminescence at around 1.3 μm from millisecond-range thermally treated GaAs. It is shown that the VAs donor and X acceptor pairs are responsible for the 1.3 μm emission. The influence of the flash-lamp-annealing on the donor-acceptor pair (DAP) formation in the nitrogen and manganese doped and un-doped semi-insulating GaAs wafers were investigated. The concentration of DAP and the 1.3 μm emission can be easily tuned by controlling doping and annealing conditions.

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  1. S.-H. Wei and A. Zunger, “Giant and composition-dependent optical bowing coefficient in GaAsN alloys,” Phys. Rev. Lett.76(4), 664–667 (1996).
    [CrossRef] [PubMed]
  2. E. D. Jones, N. A. Modine, A. A. Allerman, S. R. Kurtz, A. F. Wright, S. Tozer, and X. Wei, “Band structure of InxGa1-xAs1-yNy alloys and effects of pressure,” Phys. Rev. B60(7), 4430–4433 (1999).
    [CrossRef]
  3. I. Suemune, K. Uesugi, and W. Walukiewicz, “Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs,” Appl. Phys. Lett.77(19), 3021–3023 (2000).
    [CrossRef]
  4. W. Orellana and A. C. Ferraz, “Ab initio study of substitutional nitrogen in GaAs,” Appl. Phys. Lett.78(9), 1231–1233 (2001).
    [CrossRef]
  5. W. Huang, M. Yoshimoto, Y. Takehara, J. Saraie, and K. Oe, “GaNyAs1-x-yBix Alloy Lattice Matched to GaAs with 1.3 µm Photoluminescence Emission,” Jpn. J. Appl. Phys.43(No. 10B), L1350–L1352 (2004).
    [CrossRef]
  6. T. Shima, S. Kimura, T. Iida, A. Obara, Y. Makita, K. Kudo, and K. Tanaka, “High concentration nitrogen ion doping into GaAs for the fabrication of GaAsN,” Nucl. Instr. Method B118(1-4), 743–747 (1996).
    [CrossRef]
  7. H. Ch. Alt, Y. V. Gomeniuk, G. Lenk, and B. Wiedemann, “GaAsN formation by implantation of nitrogen into GaAs studied by infrared spectroscopy,” Physica B340–342, 394–398 (2003).
    [CrossRef]
  8. K. M. Yu, S. V. Novikov, R. Broesler, I. N. Demchenko, J. D. Denlinger, Z. Liliental-Weber, F. Luckert, R. W. Martin, W. Walukiewicz, and C. T. Foxon, “Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range,” J. Appl. Phys.106(10), 103709 (2009).
    [CrossRef]
  9. Y. Tominaga, K. Oe, and M. Yoshimoto, “Temperature-insensitive photoluminescence emission wavelength in GaAs1–xBix/GaAs multiquantum wells,” Phys. Status Solidi C8(2), 260–262 (2011).
    [CrossRef]
  10. M. Grundmann, O. Stier, and D. Bimberg, “InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure,” Phys. Rev. B Condens. Matter52(16), 11969–11981 (1995).
    [CrossRef] [PubMed]
  11. C. V. Reddy, S. Fung, and C. D. Beling, “Nature of the bulk defects in GaAs through high-temperature quenching studies,” Phys. Rev. B Condens. Matter54(16), 11290–11297 (1996).
    [CrossRef] [PubMed]
  12. H. Lei, H. S. Leipner, V. Bondarenko, and J. Schreiber, “Identification of the 0.95 eV luminescence band in n-type GaAs:Si,” J. Phys. Condens. Matter16(2), S279–S285 (2004).
    [CrossRef]
  13. W. Skorupa, T. Gebel, R. A. Yankov, S. Paul, W. Lerch, D. F. Downey, and E. A. Arevalo, “Advanced thermal processing of ultrashallow implanted junctions using flash lamp annealing,” J. Electrochem. Soc.152(6), G436–G440 (2005).
    [CrossRef]
  14. T. Prokofyeva, T. Sauncy, M. Seon, M. Holtz, Y. Qiu, S. Nikishin, and H. Temkin, “Raman studies of nitrogen incorporation in GaAs1−xNx,” Appl. Phys. Lett.73(10), 1409–1411 (1998).
    [CrossRef]
  15. M. R. Islam, P. Verma, M. Yamada, M. Tatsumi, and K. Kinoshita, “Micro-Raman Characterization of Starting Material for Traveling Liquidus Zone Growth Method,” Jpn. J. Appl. Phys.41(Part 1, No. 2B), 991–995 (2002).
    [CrossRef]
  16. M. R. Islam, N. F. Chen, and M. Yamada, “Raman scattering study on Ga1-xMnx As prepared by Mn ions implantation, deposition and post-annealing,” Cryst. Res. Technol.44(2), 215–220 (2009).
    [CrossRef]
  17. D. E. Aspnes and A. A. Studna, “Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV,” Phys. Rev. B27(2), 985–1009 (1983).
    [CrossRef]
  18. S. Francoeur, G. Sivaraman, Y. Qiu, S. Nikishin, and H. Temkin, “Luminescence of as-grown and thermally annealed GaAsN/GaAs,” Appl. Phys. Lett.72(15), 1857–1859 (1998).
    [CrossRef]
  19. D. Bürger, S. Zhou, J. Grenzer, H. Reuther, W. Anwand, V. Gottschalch, M. Helm, and H. Schmidt, “The influence of annealing on manganese implanted GaAs films,” Nucl. Instr. Method B267, 1626–1629 (2009).
  20. O. Yastrubchak, J. Zuk, H. Krzyzanowska, J. Z. Domagala, T. Andrearczyk, J. Sadowski, and T. Wosinski, “Photoreflectance study of the fundamental optical properties of (Ga,Mn)As epitaxial films,” Phys. Rev. B83(24), 245201 (2011).
    [CrossRef]
  21. V. Bondarenko, J. Gebauer, F. Redmann, and R. Krause-Rehberg, “Vacancy formation in GaAs under different equilibrium conditions,” Appl. Phys. Lett.87(16), 161906 (2005).
    [CrossRef]
  22. K. Saarinen, P. Hautojärvi, P. Lanki, and C. Corbel, “Ionization levels of As vacancies in as-grown GaAs studied by positron-lifetime spectroscopy,” Phys. Rev. B Condens. Matter44(19), 10585–10600 (1991).
    [CrossRef] [PubMed]
  23. K. Saarinen, S. Kuisma, P. Hautojärvi, C. Corbel, and C. LeBerre, “Native vacancies in semi-insulating GaAs observed by positron lifetime spectroscopy under photoexcitation,” Phys. Rev. Lett.70(18), 2794–2797 (1993).
    [CrossRef] [PubMed]
  24. S. Kuisma, K. Saarinen, P. Hautojärvi, C. Corbel, and C. LeBerre, “Optical processes related to arsenic vacancies in semi-insulating GaAs studied by positron spectroscopy,” Phys. Rev. B Condens. Matter53(15), 9814–9830 (1996).
    [CrossRef] [PubMed]
  25. M. Suezawa, A. Kasuya, Y. Nishina, and K. Sumino, “Excitation spectra of 1200 and 1320 nm photoluminescence lines in annealed gallium arsenide doped with silicon,” J. Appl. Phys.76(2), 1164–1168 (1994).
    [CrossRef]
  26. J. Liang, J. Jiang, J. Zhao, and Y. Gao, “Studies on 0.96 and 0.84 eV photoluminescence emissions in GaAs epilayers grown on Si,” J. Appl. Phys.79(9), 7173–7176 (1996).
    [CrossRef]

2011 (2)

Y. Tominaga, K. Oe, and M. Yoshimoto, “Temperature-insensitive photoluminescence emission wavelength in GaAs1–xBix/GaAs multiquantum wells,” Phys. Status Solidi C8(2), 260–262 (2011).
[CrossRef]

O. Yastrubchak, J. Zuk, H. Krzyzanowska, J. Z. Domagala, T. Andrearczyk, J. Sadowski, and T. Wosinski, “Photoreflectance study of the fundamental optical properties of (Ga,Mn)As epitaxial films,” Phys. Rev. B83(24), 245201 (2011).
[CrossRef]

2009 (3)

D. Bürger, S. Zhou, J. Grenzer, H. Reuther, W. Anwand, V. Gottschalch, M. Helm, and H. Schmidt, “The influence of annealing on manganese implanted GaAs films,” Nucl. Instr. Method B267, 1626–1629 (2009).

M. R. Islam, N. F. Chen, and M. Yamada, “Raman scattering study on Ga1-xMnx As prepared by Mn ions implantation, deposition and post-annealing,” Cryst. Res. Technol.44(2), 215–220 (2009).
[CrossRef]

K. M. Yu, S. V. Novikov, R. Broesler, I. N. Demchenko, J. D. Denlinger, Z. Liliental-Weber, F. Luckert, R. W. Martin, W. Walukiewicz, and C. T. Foxon, “Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range,” J. Appl. Phys.106(10), 103709 (2009).
[CrossRef]

2005 (2)

W. Skorupa, T. Gebel, R. A. Yankov, S. Paul, W. Lerch, D. F. Downey, and E. A. Arevalo, “Advanced thermal processing of ultrashallow implanted junctions using flash lamp annealing,” J. Electrochem. Soc.152(6), G436–G440 (2005).
[CrossRef]

V. Bondarenko, J. Gebauer, F. Redmann, and R. Krause-Rehberg, “Vacancy formation in GaAs under different equilibrium conditions,” Appl. Phys. Lett.87(16), 161906 (2005).
[CrossRef]

2004 (2)

H. Lei, H. S. Leipner, V. Bondarenko, and J. Schreiber, “Identification of the 0.95 eV luminescence band in n-type GaAs:Si,” J. Phys. Condens. Matter16(2), S279–S285 (2004).
[CrossRef]

W. Huang, M. Yoshimoto, Y. Takehara, J. Saraie, and K. Oe, “GaNyAs1-x-yBix Alloy Lattice Matched to GaAs with 1.3 µm Photoluminescence Emission,” Jpn. J. Appl. Phys.43(No. 10B), L1350–L1352 (2004).
[CrossRef]

2003 (1)

H. Ch. Alt, Y. V. Gomeniuk, G. Lenk, and B. Wiedemann, “GaAsN formation by implantation of nitrogen into GaAs studied by infrared spectroscopy,” Physica B340–342, 394–398 (2003).
[CrossRef]

2002 (1)

M. R. Islam, P. Verma, M. Yamada, M. Tatsumi, and K. Kinoshita, “Micro-Raman Characterization of Starting Material for Traveling Liquidus Zone Growth Method,” Jpn. J. Appl. Phys.41(Part 1, No. 2B), 991–995 (2002).
[CrossRef]

2001 (1)

W. Orellana and A. C. Ferraz, “Ab initio study of substitutional nitrogen in GaAs,” Appl. Phys. Lett.78(9), 1231–1233 (2001).
[CrossRef]

2000 (1)

I. Suemune, K. Uesugi, and W. Walukiewicz, “Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs,” Appl. Phys. Lett.77(19), 3021–3023 (2000).
[CrossRef]

1999 (1)

E. D. Jones, N. A. Modine, A. A. Allerman, S. R. Kurtz, A. F. Wright, S. Tozer, and X. Wei, “Band structure of InxGa1-xAs1-yNy alloys and effects of pressure,” Phys. Rev. B60(7), 4430–4433 (1999).
[CrossRef]

1998 (2)

T. Prokofyeva, T. Sauncy, M. Seon, M. Holtz, Y. Qiu, S. Nikishin, and H. Temkin, “Raman studies of nitrogen incorporation in GaAs1−xNx,” Appl. Phys. Lett.73(10), 1409–1411 (1998).
[CrossRef]

S. Francoeur, G. Sivaraman, Y. Qiu, S. Nikishin, and H. Temkin, “Luminescence of as-grown and thermally annealed GaAsN/GaAs,” Appl. Phys. Lett.72(15), 1857–1859 (1998).
[CrossRef]

1996 (5)

S. Kuisma, K. Saarinen, P. Hautojärvi, C. Corbel, and C. LeBerre, “Optical processes related to arsenic vacancies in semi-insulating GaAs studied by positron spectroscopy,” Phys. Rev. B Condens. Matter53(15), 9814–9830 (1996).
[CrossRef] [PubMed]

J. Liang, J. Jiang, J. Zhao, and Y. Gao, “Studies on 0.96 and 0.84 eV photoluminescence emissions in GaAs epilayers grown on Si,” J. Appl. Phys.79(9), 7173–7176 (1996).
[CrossRef]

C. V. Reddy, S. Fung, and C. D. Beling, “Nature of the bulk defects in GaAs through high-temperature quenching studies,” Phys. Rev. B Condens. Matter54(16), 11290–11297 (1996).
[CrossRef] [PubMed]

S.-H. Wei and A. Zunger, “Giant and composition-dependent optical bowing coefficient in GaAsN alloys,” Phys. Rev. Lett.76(4), 664–667 (1996).
[CrossRef] [PubMed]

T. Shima, S. Kimura, T. Iida, A. Obara, Y. Makita, K. Kudo, and K. Tanaka, “High concentration nitrogen ion doping into GaAs for the fabrication of GaAsN,” Nucl. Instr. Method B118(1-4), 743–747 (1996).
[CrossRef]

1995 (1)

M. Grundmann, O. Stier, and D. Bimberg, “InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure,” Phys. Rev. B Condens. Matter52(16), 11969–11981 (1995).
[CrossRef] [PubMed]

1994 (1)

M. Suezawa, A. Kasuya, Y. Nishina, and K. Sumino, “Excitation spectra of 1200 and 1320 nm photoluminescence lines in annealed gallium arsenide doped with silicon,” J. Appl. Phys.76(2), 1164–1168 (1994).
[CrossRef]

1993 (1)

K. Saarinen, S. Kuisma, P. Hautojärvi, C. Corbel, and C. LeBerre, “Native vacancies in semi-insulating GaAs observed by positron lifetime spectroscopy under photoexcitation,” Phys. Rev. Lett.70(18), 2794–2797 (1993).
[CrossRef] [PubMed]

1991 (1)

K. Saarinen, P. Hautojärvi, P. Lanki, and C. Corbel, “Ionization levels of As vacancies in as-grown GaAs studied by positron-lifetime spectroscopy,” Phys. Rev. B Condens. Matter44(19), 10585–10600 (1991).
[CrossRef] [PubMed]

1983 (1)

D. E. Aspnes and A. A. Studna, “Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV,” Phys. Rev. B27(2), 985–1009 (1983).
[CrossRef]

Allerman, A. A.

E. D. Jones, N. A. Modine, A. A. Allerman, S. R. Kurtz, A. F. Wright, S. Tozer, and X. Wei, “Band structure of InxGa1-xAs1-yNy alloys and effects of pressure,” Phys. Rev. B60(7), 4430–4433 (1999).
[CrossRef]

Alt, H. Ch.

H. Ch. Alt, Y. V. Gomeniuk, G. Lenk, and B. Wiedemann, “GaAsN formation by implantation of nitrogen into GaAs studied by infrared spectroscopy,” Physica B340–342, 394–398 (2003).
[CrossRef]

Andrearczyk, T.

O. Yastrubchak, J. Zuk, H. Krzyzanowska, J. Z. Domagala, T. Andrearczyk, J. Sadowski, and T. Wosinski, “Photoreflectance study of the fundamental optical properties of (Ga,Mn)As epitaxial films,” Phys. Rev. B83(24), 245201 (2011).
[CrossRef]

Anwand, W.

D. Bürger, S. Zhou, J. Grenzer, H. Reuther, W. Anwand, V. Gottschalch, M. Helm, and H. Schmidt, “The influence of annealing on manganese implanted GaAs films,” Nucl. Instr. Method B267, 1626–1629 (2009).

Arevalo, E. A.

W. Skorupa, T. Gebel, R. A. Yankov, S. Paul, W. Lerch, D. F. Downey, and E. A. Arevalo, “Advanced thermal processing of ultrashallow implanted junctions using flash lamp annealing,” J. Electrochem. Soc.152(6), G436–G440 (2005).
[CrossRef]

Aspnes, D. E.

D. E. Aspnes and A. A. Studna, “Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV,” Phys. Rev. B27(2), 985–1009 (1983).
[CrossRef]

Beling, C. D.

C. V. Reddy, S. Fung, and C. D. Beling, “Nature of the bulk defects in GaAs through high-temperature quenching studies,” Phys. Rev. B Condens. Matter54(16), 11290–11297 (1996).
[CrossRef] [PubMed]

Bimberg, D.

M. Grundmann, O. Stier, and D. Bimberg, “InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure,” Phys. Rev. B Condens. Matter52(16), 11969–11981 (1995).
[CrossRef] [PubMed]

Bondarenko, V.

V. Bondarenko, J. Gebauer, F. Redmann, and R. Krause-Rehberg, “Vacancy formation in GaAs under different equilibrium conditions,” Appl. Phys. Lett.87(16), 161906 (2005).
[CrossRef]

H. Lei, H. S. Leipner, V. Bondarenko, and J. Schreiber, “Identification of the 0.95 eV luminescence band in n-type GaAs:Si,” J. Phys. Condens. Matter16(2), S279–S285 (2004).
[CrossRef]

Broesler, R.

K. M. Yu, S. V. Novikov, R. Broesler, I. N. Demchenko, J. D. Denlinger, Z. Liliental-Weber, F. Luckert, R. W. Martin, W. Walukiewicz, and C. T. Foxon, “Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range,” J. Appl. Phys.106(10), 103709 (2009).
[CrossRef]

Bürger, D.

D. Bürger, S. Zhou, J. Grenzer, H. Reuther, W. Anwand, V. Gottschalch, M. Helm, and H. Schmidt, “The influence of annealing on manganese implanted GaAs films,” Nucl. Instr. Method B267, 1626–1629 (2009).

Chen, N. F.

M. R. Islam, N. F. Chen, and M. Yamada, “Raman scattering study on Ga1-xMnx As prepared by Mn ions implantation, deposition and post-annealing,” Cryst. Res. Technol.44(2), 215–220 (2009).
[CrossRef]

Corbel, C.

S. Kuisma, K. Saarinen, P. Hautojärvi, C. Corbel, and C. LeBerre, “Optical processes related to arsenic vacancies in semi-insulating GaAs studied by positron spectroscopy,” Phys. Rev. B Condens. Matter53(15), 9814–9830 (1996).
[CrossRef] [PubMed]

K. Saarinen, S. Kuisma, P. Hautojärvi, C. Corbel, and C. LeBerre, “Native vacancies in semi-insulating GaAs observed by positron lifetime spectroscopy under photoexcitation,” Phys. Rev. Lett.70(18), 2794–2797 (1993).
[CrossRef] [PubMed]

K. Saarinen, P. Hautojärvi, P. Lanki, and C. Corbel, “Ionization levels of As vacancies in as-grown GaAs studied by positron-lifetime spectroscopy,” Phys. Rev. B Condens. Matter44(19), 10585–10600 (1991).
[CrossRef] [PubMed]

Demchenko, I. N.

K. M. Yu, S. V. Novikov, R. Broesler, I. N. Demchenko, J. D. Denlinger, Z. Liliental-Weber, F. Luckert, R. W. Martin, W. Walukiewicz, and C. T. Foxon, “Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range,” J. Appl. Phys.106(10), 103709 (2009).
[CrossRef]

Denlinger, J. D.

K. M. Yu, S. V. Novikov, R. Broesler, I. N. Demchenko, J. D. Denlinger, Z. Liliental-Weber, F. Luckert, R. W. Martin, W. Walukiewicz, and C. T. Foxon, “Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range,” J. Appl. Phys.106(10), 103709 (2009).
[CrossRef]

Domagala, J. Z.

O. Yastrubchak, J. Zuk, H. Krzyzanowska, J. Z. Domagala, T. Andrearczyk, J. Sadowski, and T. Wosinski, “Photoreflectance study of the fundamental optical properties of (Ga,Mn)As epitaxial films,” Phys. Rev. B83(24), 245201 (2011).
[CrossRef]

Downey, D. F.

W. Skorupa, T. Gebel, R. A. Yankov, S. Paul, W. Lerch, D. F. Downey, and E. A. Arevalo, “Advanced thermal processing of ultrashallow implanted junctions using flash lamp annealing,” J. Electrochem. Soc.152(6), G436–G440 (2005).
[CrossRef]

Ferraz, A. C.

W. Orellana and A. C. Ferraz, “Ab initio study of substitutional nitrogen in GaAs,” Appl. Phys. Lett.78(9), 1231–1233 (2001).
[CrossRef]

Foxon, C. T.

K. M. Yu, S. V. Novikov, R. Broesler, I. N. Demchenko, J. D. Denlinger, Z. Liliental-Weber, F. Luckert, R. W. Martin, W. Walukiewicz, and C. T. Foxon, “Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range,” J. Appl. Phys.106(10), 103709 (2009).
[CrossRef]

Francoeur, S.

S. Francoeur, G. Sivaraman, Y. Qiu, S. Nikishin, and H. Temkin, “Luminescence of as-grown and thermally annealed GaAsN/GaAs,” Appl. Phys. Lett.72(15), 1857–1859 (1998).
[CrossRef]

Fung, S.

C. V. Reddy, S. Fung, and C. D. Beling, “Nature of the bulk defects in GaAs through high-temperature quenching studies,” Phys. Rev. B Condens. Matter54(16), 11290–11297 (1996).
[CrossRef] [PubMed]

Gao, Y.

J. Liang, J. Jiang, J. Zhao, and Y. Gao, “Studies on 0.96 and 0.84 eV photoluminescence emissions in GaAs epilayers grown on Si,” J. Appl. Phys.79(9), 7173–7176 (1996).
[CrossRef]

Gebauer, J.

V. Bondarenko, J. Gebauer, F. Redmann, and R. Krause-Rehberg, “Vacancy formation in GaAs under different equilibrium conditions,” Appl. Phys. Lett.87(16), 161906 (2005).
[CrossRef]

Gebel, T.

W. Skorupa, T. Gebel, R. A. Yankov, S. Paul, W. Lerch, D. F. Downey, and E. A. Arevalo, “Advanced thermal processing of ultrashallow implanted junctions using flash lamp annealing,” J. Electrochem. Soc.152(6), G436–G440 (2005).
[CrossRef]

Gomeniuk, Y. V.

H. Ch. Alt, Y. V. Gomeniuk, G. Lenk, and B. Wiedemann, “GaAsN formation by implantation of nitrogen into GaAs studied by infrared spectroscopy,” Physica B340–342, 394–398 (2003).
[CrossRef]

Gottschalch, V.

D. Bürger, S. Zhou, J. Grenzer, H. Reuther, W. Anwand, V. Gottschalch, M. Helm, and H. Schmidt, “The influence of annealing on manganese implanted GaAs films,” Nucl. Instr. Method B267, 1626–1629 (2009).

Grenzer, J.

D. Bürger, S. Zhou, J. Grenzer, H. Reuther, W. Anwand, V. Gottschalch, M. Helm, and H. Schmidt, “The influence of annealing on manganese implanted GaAs films,” Nucl. Instr. Method B267, 1626–1629 (2009).

Grundmann, M.

M. Grundmann, O. Stier, and D. Bimberg, “InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure,” Phys. Rev. B Condens. Matter52(16), 11969–11981 (1995).
[CrossRef] [PubMed]

Hautojärvi, P.

S. Kuisma, K. Saarinen, P. Hautojärvi, C. Corbel, and C. LeBerre, “Optical processes related to arsenic vacancies in semi-insulating GaAs studied by positron spectroscopy,” Phys. Rev. B Condens. Matter53(15), 9814–9830 (1996).
[CrossRef] [PubMed]

K. Saarinen, S. Kuisma, P. Hautojärvi, C. Corbel, and C. LeBerre, “Native vacancies in semi-insulating GaAs observed by positron lifetime spectroscopy under photoexcitation,” Phys. Rev. Lett.70(18), 2794–2797 (1993).
[CrossRef] [PubMed]

K. Saarinen, P. Hautojärvi, P. Lanki, and C. Corbel, “Ionization levels of As vacancies in as-grown GaAs studied by positron-lifetime spectroscopy,” Phys. Rev. B Condens. Matter44(19), 10585–10600 (1991).
[CrossRef] [PubMed]

Helm, M.

D. Bürger, S. Zhou, J. Grenzer, H. Reuther, W. Anwand, V. Gottschalch, M. Helm, and H. Schmidt, “The influence of annealing on manganese implanted GaAs films,” Nucl. Instr. Method B267, 1626–1629 (2009).

Holtz, M.

T. Prokofyeva, T. Sauncy, M. Seon, M. Holtz, Y. Qiu, S. Nikishin, and H. Temkin, “Raman studies of nitrogen incorporation in GaAs1−xNx,” Appl. Phys. Lett.73(10), 1409–1411 (1998).
[CrossRef]

Huang, W.

W. Huang, M. Yoshimoto, Y. Takehara, J. Saraie, and K. Oe, “GaNyAs1-x-yBix Alloy Lattice Matched to GaAs with 1.3 µm Photoluminescence Emission,” Jpn. J. Appl. Phys.43(No. 10B), L1350–L1352 (2004).
[CrossRef]

Iida, T.

T. Shima, S. Kimura, T. Iida, A. Obara, Y. Makita, K. Kudo, and K. Tanaka, “High concentration nitrogen ion doping into GaAs for the fabrication of GaAsN,” Nucl. Instr. Method B118(1-4), 743–747 (1996).
[CrossRef]

Islam, M. R.

M. R. Islam, N. F. Chen, and M. Yamada, “Raman scattering study on Ga1-xMnx As prepared by Mn ions implantation, deposition and post-annealing,” Cryst. Res. Technol.44(2), 215–220 (2009).
[CrossRef]

M. R. Islam, P. Verma, M. Yamada, M. Tatsumi, and K. Kinoshita, “Micro-Raman Characterization of Starting Material for Traveling Liquidus Zone Growth Method,” Jpn. J. Appl. Phys.41(Part 1, No. 2B), 991–995 (2002).
[CrossRef]

Jiang, J.

J. Liang, J. Jiang, J. Zhao, and Y. Gao, “Studies on 0.96 and 0.84 eV photoluminescence emissions in GaAs epilayers grown on Si,” J. Appl. Phys.79(9), 7173–7176 (1996).
[CrossRef]

Jones, E. D.

E. D. Jones, N. A. Modine, A. A. Allerman, S. R. Kurtz, A. F. Wright, S. Tozer, and X. Wei, “Band structure of InxGa1-xAs1-yNy alloys and effects of pressure,” Phys. Rev. B60(7), 4430–4433 (1999).
[CrossRef]

Kasuya, A.

M. Suezawa, A. Kasuya, Y. Nishina, and K. Sumino, “Excitation spectra of 1200 and 1320 nm photoluminescence lines in annealed gallium arsenide doped with silicon,” J. Appl. Phys.76(2), 1164–1168 (1994).
[CrossRef]

Kimura, S.

T. Shima, S. Kimura, T. Iida, A. Obara, Y. Makita, K. Kudo, and K. Tanaka, “High concentration nitrogen ion doping into GaAs for the fabrication of GaAsN,” Nucl. Instr. Method B118(1-4), 743–747 (1996).
[CrossRef]

Kinoshita, K.

M. R. Islam, P. Verma, M. Yamada, M. Tatsumi, and K. Kinoshita, “Micro-Raman Characterization of Starting Material for Traveling Liquidus Zone Growth Method,” Jpn. J. Appl. Phys.41(Part 1, No. 2B), 991–995 (2002).
[CrossRef]

Krause-Rehberg, R.

V. Bondarenko, J. Gebauer, F. Redmann, and R. Krause-Rehberg, “Vacancy formation in GaAs under different equilibrium conditions,” Appl. Phys. Lett.87(16), 161906 (2005).
[CrossRef]

Krzyzanowska, H.

O. Yastrubchak, J. Zuk, H. Krzyzanowska, J. Z. Domagala, T. Andrearczyk, J. Sadowski, and T. Wosinski, “Photoreflectance study of the fundamental optical properties of (Ga,Mn)As epitaxial films,” Phys. Rev. B83(24), 245201 (2011).
[CrossRef]

Kudo, K.

T. Shima, S. Kimura, T. Iida, A. Obara, Y. Makita, K. Kudo, and K. Tanaka, “High concentration nitrogen ion doping into GaAs for the fabrication of GaAsN,” Nucl. Instr. Method B118(1-4), 743–747 (1996).
[CrossRef]

Kuisma, S.

S. Kuisma, K. Saarinen, P. Hautojärvi, C. Corbel, and C. LeBerre, “Optical processes related to arsenic vacancies in semi-insulating GaAs studied by positron spectroscopy,” Phys. Rev. B Condens. Matter53(15), 9814–9830 (1996).
[CrossRef] [PubMed]

K. Saarinen, S. Kuisma, P. Hautojärvi, C. Corbel, and C. LeBerre, “Native vacancies in semi-insulating GaAs observed by positron lifetime spectroscopy under photoexcitation,” Phys. Rev. Lett.70(18), 2794–2797 (1993).
[CrossRef] [PubMed]

Kurtz, S. R.

E. D. Jones, N. A. Modine, A. A. Allerman, S. R. Kurtz, A. F. Wright, S. Tozer, and X. Wei, “Band structure of InxGa1-xAs1-yNy alloys and effects of pressure,” Phys. Rev. B60(7), 4430–4433 (1999).
[CrossRef]

Lanki, P.

K. Saarinen, P. Hautojärvi, P. Lanki, and C. Corbel, “Ionization levels of As vacancies in as-grown GaAs studied by positron-lifetime spectroscopy,” Phys. Rev. B Condens. Matter44(19), 10585–10600 (1991).
[CrossRef] [PubMed]

LeBerre, C.

S. Kuisma, K. Saarinen, P. Hautojärvi, C. Corbel, and C. LeBerre, “Optical processes related to arsenic vacancies in semi-insulating GaAs studied by positron spectroscopy,” Phys. Rev. B Condens. Matter53(15), 9814–9830 (1996).
[CrossRef] [PubMed]

K. Saarinen, S. Kuisma, P. Hautojärvi, C. Corbel, and C. LeBerre, “Native vacancies in semi-insulating GaAs observed by positron lifetime spectroscopy under photoexcitation,” Phys. Rev. Lett.70(18), 2794–2797 (1993).
[CrossRef] [PubMed]

Lei, H.

H. Lei, H. S. Leipner, V. Bondarenko, and J. Schreiber, “Identification of the 0.95 eV luminescence band in n-type GaAs:Si,” J. Phys. Condens. Matter16(2), S279–S285 (2004).
[CrossRef]

Leipner, H. S.

H. Lei, H. S. Leipner, V. Bondarenko, and J. Schreiber, “Identification of the 0.95 eV luminescence band in n-type GaAs:Si,” J. Phys. Condens. Matter16(2), S279–S285 (2004).
[CrossRef]

Lenk, G.

H. Ch. Alt, Y. V. Gomeniuk, G. Lenk, and B. Wiedemann, “GaAsN formation by implantation of nitrogen into GaAs studied by infrared spectroscopy,” Physica B340–342, 394–398 (2003).
[CrossRef]

Lerch, W.

W. Skorupa, T. Gebel, R. A. Yankov, S. Paul, W. Lerch, D. F. Downey, and E. A. Arevalo, “Advanced thermal processing of ultrashallow implanted junctions using flash lamp annealing,” J. Electrochem. Soc.152(6), G436–G440 (2005).
[CrossRef]

Liang, J.

J. Liang, J. Jiang, J. Zhao, and Y. Gao, “Studies on 0.96 and 0.84 eV photoluminescence emissions in GaAs epilayers grown on Si,” J. Appl. Phys.79(9), 7173–7176 (1996).
[CrossRef]

Liliental-Weber, Z.

K. M. Yu, S. V. Novikov, R. Broesler, I. N. Demchenko, J. D. Denlinger, Z. Liliental-Weber, F. Luckert, R. W. Martin, W. Walukiewicz, and C. T. Foxon, “Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range,” J. Appl. Phys.106(10), 103709 (2009).
[CrossRef]

Luckert, F.

K. M. Yu, S. V. Novikov, R. Broesler, I. N. Demchenko, J. D. Denlinger, Z. Liliental-Weber, F. Luckert, R. W. Martin, W. Walukiewicz, and C. T. Foxon, “Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range,” J. Appl. Phys.106(10), 103709 (2009).
[CrossRef]

Makita, Y.

T. Shima, S. Kimura, T. Iida, A. Obara, Y. Makita, K. Kudo, and K. Tanaka, “High concentration nitrogen ion doping into GaAs for the fabrication of GaAsN,” Nucl. Instr. Method B118(1-4), 743–747 (1996).
[CrossRef]

Martin, R. W.

K. M. Yu, S. V. Novikov, R. Broesler, I. N. Demchenko, J. D. Denlinger, Z. Liliental-Weber, F. Luckert, R. W. Martin, W. Walukiewicz, and C. T. Foxon, “Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range,” J. Appl. Phys.106(10), 103709 (2009).
[CrossRef]

Modine, N. A.

E. D. Jones, N. A. Modine, A. A. Allerman, S. R. Kurtz, A. F. Wright, S. Tozer, and X. Wei, “Band structure of InxGa1-xAs1-yNy alloys and effects of pressure,” Phys. Rev. B60(7), 4430–4433 (1999).
[CrossRef]

Nikishin, S.

T. Prokofyeva, T. Sauncy, M. Seon, M. Holtz, Y. Qiu, S. Nikishin, and H. Temkin, “Raman studies of nitrogen incorporation in GaAs1−xNx,” Appl. Phys. Lett.73(10), 1409–1411 (1998).
[CrossRef]

S. Francoeur, G. Sivaraman, Y. Qiu, S. Nikishin, and H. Temkin, “Luminescence of as-grown and thermally annealed GaAsN/GaAs,” Appl. Phys. Lett.72(15), 1857–1859 (1998).
[CrossRef]

Nishina, Y.

M. Suezawa, A. Kasuya, Y. Nishina, and K. Sumino, “Excitation spectra of 1200 and 1320 nm photoluminescence lines in annealed gallium arsenide doped with silicon,” J. Appl. Phys.76(2), 1164–1168 (1994).
[CrossRef]

Novikov, S. V.

K. M. Yu, S. V. Novikov, R. Broesler, I. N. Demchenko, J. D. Denlinger, Z. Liliental-Weber, F. Luckert, R. W. Martin, W. Walukiewicz, and C. T. Foxon, “Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range,” J. Appl. Phys.106(10), 103709 (2009).
[CrossRef]

Obara, A.

T. Shima, S. Kimura, T. Iida, A. Obara, Y. Makita, K. Kudo, and K. Tanaka, “High concentration nitrogen ion doping into GaAs for the fabrication of GaAsN,” Nucl. Instr. Method B118(1-4), 743–747 (1996).
[CrossRef]

Oe, K.

Y. Tominaga, K. Oe, and M. Yoshimoto, “Temperature-insensitive photoluminescence emission wavelength in GaAs1–xBix/GaAs multiquantum wells,” Phys. Status Solidi C8(2), 260–262 (2011).
[CrossRef]

W. Huang, M. Yoshimoto, Y. Takehara, J. Saraie, and K. Oe, “GaNyAs1-x-yBix Alloy Lattice Matched to GaAs with 1.3 µm Photoluminescence Emission,” Jpn. J. Appl. Phys.43(No. 10B), L1350–L1352 (2004).
[CrossRef]

Orellana, W.

W. Orellana and A. C. Ferraz, “Ab initio study of substitutional nitrogen in GaAs,” Appl. Phys. Lett.78(9), 1231–1233 (2001).
[CrossRef]

Paul, S.

W. Skorupa, T. Gebel, R. A. Yankov, S. Paul, W. Lerch, D. F. Downey, and E. A. Arevalo, “Advanced thermal processing of ultrashallow implanted junctions using flash lamp annealing,” J. Electrochem. Soc.152(6), G436–G440 (2005).
[CrossRef]

Prokofyeva, T.

T. Prokofyeva, T. Sauncy, M. Seon, M. Holtz, Y. Qiu, S. Nikishin, and H. Temkin, “Raman studies of nitrogen incorporation in GaAs1−xNx,” Appl. Phys. Lett.73(10), 1409–1411 (1998).
[CrossRef]

Qiu, Y.

T. Prokofyeva, T. Sauncy, M. Seon, M. Holtz, Y. Qiu, S. Nikishin, and H. Temkin, “Raman studies of nitrogen incorporation in GaAs1−xNx,” Appl. Phys. Lett.73(10), 1409–1411 (1998).
[CrossRef]

S. Francoeur, G. Sivaraman, Y. Qiu, S. Nikishin, and H. Temkin, “Luminescence of as-grown and thermally annealed GaAsN/GaAs,” Appl. Phys. Lett.72(15), 1857–1859 (1998).
[CrossRef]

Reddy, C. V.

C. V. Reddy, S. Fung, and C. D. Beling, “Nature of the bulk defects in GaAs through high-temperature quenching studies,” Phys. Rev. B Condens. Matter54(16), 11290–11297 (1996).
[CrossRef] [PubMed]

Redmann, F.

V. Bondarenko, J. Gebauer, F. Redmann, and R. Krause-Rehberg, “Vacancy formation in GaAs under different equilibrium conditions,” Appl. Phys. Lett.87(16), 161906 (2005).
[CrossRef]

Reuther, H.

D. Bürger, S. Zhou, J. Grenzer, H. Reuther, W. Anwand, V. Gottschalch, M. Helm, and H. Schmidt, “The influence of annealing on manganese implanted GaAs films,” Nucl. Instr. Method B267, 1626–1629 (2009).

Saarinen, K.

S. Kuisma, K. Saarinen, P. Hautojärvi, C. Corbel, and C. LeBerre, “Optical processes related to arsenic vacancies in semi-insulating GaAs studied by positron spectroscopy,” Phys. Rev. B Condens. Matter53(15), 9814–9830 (1996).
[CrossRef] [PubMed]

K. Saarinen, S. Kuisma, P. Hautojärvi, C. Corbel, and C. LeBerre, “Native vacancies in semi-insulating GaAs observed by positron lifetime spectroscopy under photoexcitation,” Phys. Rev. Lett.70(18), 2794–2797 (1993).
[CrossRef] [PubMed]

K. Saarinen, P. Hautojärvi, P. Lanki, and C. Corbel, “Ionization levels of As vacancies in as-grown GaAs studied by positron-lifetime spectroscopy,” Phys. Rev. B Condens. Matter44(19), 10585–10600 (1991).
[CrossRef] [PubMed]

Sadowski, J.

O. Yastrubchak, J. Zuk, H. Krzyzanowska, J. Z. Domagala, T. Andrearczyk, J. Sadowski, and T. Wosinski, “Photoreflectance study of the fundamental optical properties of (Ga,Mn)As epitaxial films,” Phys. Rev. B83(24), 245201 (2011).
[CrossRef]

Saraie, J.

W. Huang, M. Yoshimoto, Y. Takehara, J. Saraie, and K. Oe, “GaNyAs1-x-yBix Alloy Lattice Matched to GaAs with 1.3 µm Photoluminescence Emission,” Jpn. J. Appl. Phys.43(No. 10B), L1350–L1352 (2004).
[CrossRef]

Sauncy, T.

T. Prokofyeva, T. Sauncy, M. Seon, M. Holtz, Y. Qiu, S. Nikishin, and H. Temkin, “Raman studies of nitrogen incorporation in GaAs1−xNx,” Appl. Phys. Lett.73(10), 1409–1411 (1998).
[CrossRef]

Schmidt, H.

D. Bürger, S. Zhou, J. Grenzer, H. Reuther, W. Anwand, V. Gottschalch, M. Helm, and H. Schmidt, “The influence of annealing on manganese implanted GaAs films,” Nucl. Instr. Method B267, 1626–1629 (2009).

Schreiber, J.

H. Lei, H. S. Leipner, V. Bondarenko, and J. Schreiber, “Identification of the 0.95 eV luminescence band in n-type GaAs:Si,” J. Phys. Condens. Matter16(2), S279–S285 (2004).
[CrossRef]

Seon, M.

T. Prokofyeva, T. Sauncy, M. Seon, M. Holtz, Y. Qiu, S. Nikishin, and H. Temkin, “Raman studies of nitrogen incorporation in GaAs1−xNx,” Appl. Phys. Lett.73(10), 1409–1411 (1998).
[CrossRef]

Shima, T.

T. Shima, S. Kimura, T. Iida, A. Obara, Y. Makita, K. Kudo, and K. Tanaka, “High concentration nitrogen ion doping into GaAs for the fabrication of GaAsN,” Nucl. Instr. Method B118(1-4), 743–747 (1996).
[CrossRef]

Sivaraman, G.

S. Francoeur, G. Sivaraman, Y. Qiu, S. Nikishin, and H. Temkin, “Luminescence of as-grown and thermally annealed GaAsN/GaAs,” Appl. Phys. Lett.72(15), 1857–1859 (1998).
[CrossRef]

Skorupa, W.

W. Skorupa, T. Gebel, R. A. Yankov, S. Paul, W. Lerch, D. F. Downey, and E. A. Arevalo, “Advanced thermal processing of ultrashallow implanted junctions using flash lamp annealing,” J. Electrochem. Soc.152(6), G436–G440 (2005).
[CrossRef]

Stier, O.

M. Grundmann, O. Stier, and D. Bimberg, “InAs/GaAs pyramidal quantum dots: Strain distribution, optical phonons, and electronic structure,” Phys. Rev. B Condens. Matter52(16), 11969–11981 (1995).
[CrossRef] [PubMed]

Studna, A. A.

D. E. Aspnes and A. A. Studna, “Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV,” Phys. Rev. B27(2), 985–1009 (1983).
[CrossRef]

Suemune, I.

I. Suemune, K. Uesugi, and W. Walukiewicz, “Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs,” Appl. Phys. Lett.77(19), 3021–3023 (2000).
[CrossRef]

Suezawa, M.

M. Suezawa, A. Kasuya, Y. Nishina, and K. Sumino, “Excitation spectra of 1200 and 1320 nm photoluminescence lines in annealed gallium arsenide doped with silicon,” J. Appl. Phys.76(2), 1164–1168 (1994).
[CrossRef]

Sumino, K.

M. Suezawa, A. Kasuya, Y. Nishina, and K. Sumino, “Excitation spectra of 1200 and 1320 nm photoluminescence lines in annealed gallium arsenide doped with silicon,” J. Appl. Phys.76(2), 1164–1168 (1994).
[CrossRef]

Takehara, Y.

W. Huang, M. Yoshimoto, Y. Takehara, J. Saraie, and K. Oe, “GaNyAs1-x-yBix Alloy Lattice Matched to GaAs with 1.3 µm Photoluminescence Emission,” Jpn. J. Appl. Phys.43(No. 10B), L1350–L1352 (2004).
[CrossRef]

Tanaka, K.

T. Shima, S. Kimura, T. Iida, A. Obara, Y. Makita, K. Kudo, and K. Tanaka, “High concentration nitrogen ion doping into GaAs for the fabrication of GaAsN,” Nucl. Instr. Method B118(1-4), 743–747 (1996).
[CrossRef]

Tatsumi, M.

M. R. Islam, P. Verma, M. Yamada, M. Tatsumi, and K. Kinoshita, “Micro-Raman Characterization of Starting Material for Traveling Liquidus Zone Growth Method,” Jpn. J. Appl. Phys.41(Part 1, No. 2B), 991–995 (2002).
[CrossRef]

Temkin, H.

S. Francoeur, G. Sivaraman, Y. Qiu, S. Nikishin, and H. Temkin, “Luminescence of as-grown and thermally annealed GaAsN/GaAs,” Appl. Phys. Lett.72(15), 1857–1859 (1998).
[CrossRef]

T. Prokofyeva, T. Sauncy, M. Seon, M. Holtz, Y. Qiu, S. Nikishin, and H. Temkin, “Raman studies of nitrogen incorporation in GaAs1−xNx,” Appl. Phys. Lett.73(10), 1409–1411 (1998).
[CrossRef]

Tominaga, Y.

Y. Tominaga, K. Oe, and M. Yoshimoto, “Temperature-insensitive photoluminescence emission wavelength in GaAs1–xBix/GaAs multiquantum wells,” Phys. Status Solidi C8(2), 260–262 (2011).
[CrossRef]

Tozer, S.

E. D. Jones, N. A. Modine, A. A. Allerman, S. R. Kurtz, A. F. Wright, S. Tozer, and X. Wei, “Band structure of InxGa1-xAs1-yNy alloys and effects of pressure,” Phys. Rev. B60(7), 4430–4433 (1999).
[CrossRef]

Uesugi, K.

I. Suemune, K. Uesugi, and W. Walukiewicz, “Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs,” Appl. Phys. Lett.77(19), 3021–3023 (2000).
[CrossRef]

Verma, P.

M. R. Islam, P. Verma, M. Yamada, M. Tatsumi, and K. Kinoshita, “Micro-Raman Characterization of Starting Material for Traveling Liquidus Zone Growth Method,” Jpn. J. Appl. Phys.41(Part 1, No. 2B), 991–995 (2002).
[CrossRef]

Walukiewicz, W.

K. M. Yu, S. V. Novikov, R. Broesler, I. N. Demchenko, J. D. Denlinger, Z. Liliental-Weber, F. Luckert, R. W. Martin, W. Walukiewicz, and C. T. Foxon, “Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range,” J. Appl. Phys.106(10), 103709 (2009).
[CrossRef]

I. Suemune, K. Uesugi, and W. Walukiewicz, “Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs,” Appl. Phys. Lett.77(19), 3021–3023 (2000).
[CrossRef]

Wei, S.-H.

S.-H. Wei and A. Zunger, “Giant and composition-dependent optical bowing coefficient in GaAsN alloys,” Phys. Rev. Lett.76(4), 664–667 (1996).
[CrossRef] [PubMed]

Wei, X.

E. D. Jones, N. A. Modine, A. A. Allerman, S. R. Kurtz, A. F. Wright, S. Tozer, and X. Wei, “Band structure of InxGa1-xAs1-yNy alloys and effects of pressure,” Phys. Rev. B60(7), 4430–4433 (1999).
[CrossRef]

Wiedemann, B.

H. Ch. Alt, Y. V. Gomeniuk, G. Lenk, and B. Wiedemann, “GaAsN formation by implantation of nitrogen into GaAs studied by infrared spectroscopy,” Physica B340–342, 394–398 (2003).
[CrossRef]

Wosinski, T.

O. Yastrubchak, J. Zuk, H. Krzyzanowska, J. Z. Domagala, T. Andrearczyk, J. Sadowski, and T. Wosinski, “Photoreflectance study of the fundamental optical properties of (Ga,Mn)As epitaxial films,” Phys. Rev. B83(24), 245201 (2011).
[CrossRef]

Wright, A. F.

E. D. Jones, N. A. Modine, A. A. Allerman, S. R. Kurtz, A. F. Wright, S. Tozer, and X. Wei, “Band structure of InxGa1-xAs1-yNy alloys and effects of pressure,” Phys. Rev. B60(7), 4430–4433 (1999).
[CrossRef]

Yamada, M.

M. R. Islam, N. F. Chen, and M. Yamada, “Raman scattering study on Ga1-xMnx As prepared by Mn ions implantation, deposition and post-annealing,” Cryst. Res. Technol.44(2), 215–220 (2009).
[CrossRef]

M. R. Islam, P. Verma, M. Yamada, M. Tatsumi, and K. Kinoshita, “Micro-Raman Characterization of Starting Material for Traveling Liquidus Zone Growth Method,” Jpn. J. Appl. Phys.41(Part 1, No. 2B), 991–995 (2002).
[CrossRef]

Yankov, R. A.

W. Skorupa, T. Gebel, R. A. Yankov, S. Paul, W. Lerch, D. F. Downey, and E. A. Arevalo, “Advanced thermal processing of ultrashallow implanted junctions using flash lamp annealing,” J. Electrochem. Soc.152(6), G436–G440 (2005).
[CrossRef]

Yastrubchak, O.

O. Yastrubchak, J. Zuk, H. Krzyzanowska, J. Z. Domagala, T. Andrearczyk, J. Sadowski, and T. Wosinski, “Photoreflectance study of the fundamental optical properties of (Ga,Mn)As epitaxial films,” Phys. Rev. B83(24), 245201 (2011).
[CrossRef]

Yoshimoto, M.

Y. Tominaga, K. Oe, and M. Yoshimoto, “Temperature-insensitive photoluminescence emission wavelength in GaAs1–xBix/GaAs multiquantum wells,” Phys. Status Solidi C8(2), 260–262 (2011).
[CrossRef]

W. Huang, M. Yoshimoto, Y. Takehara, J. Saraie, and K. Oe, “GaNyAs1-x-yBix Alloy Lattice Matched to GaAs with 1.3 µm Photoluminescence Emission,” Jpn. J. Appl. Phys.43(No. 10B), L1350–L1352 (2004).
[CrossRef]

Yu, K. M.

K. M. Yu, S. V. Novikov, R. Broesler, I. N. Demchenko, J. D. Denlinger, Z. Liliental-Weber, F. Luckert, R. W. Martin, W. Walukiewicz, and C. T. Foxon, “Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range,” J. Appl. Phys.106(10), 103709 (2009).
[CrossRef]

Zhao, J.

J. Liang, J. Jiang, J. Zhao, and Y. Gao, “Studies on 0.96 and 0.84 eV photoluminescence emissions in GaAs epilayers grown on Si,” J. Appl. Phys.79(9), 7173–7176 (1996).
[CrossRef]

Zhou, S.

D. Bürger, S. Zhou, J. Grenzer, H. Reuther, W. Anwand, V. Gottschalch, M. Helm, and H. Schmidt, “The influence of annealing on manganese implanted GaAs films,” Nucl. Instr. Method B267, 1626–1629 (2009).

Zuk, J.

O. Yastrubchak, J. Zuk, H. Krzyzanowska, J. Z. Domagala, T. Andrearczyk, J. Sadowski, and T. Wosinski, “Photoreflectance study of the fundamental optical properties of (Ga,Mn)As epitaxial films,” Phys. Rev. B83(24), 245201 (2011).
[CrossRef]

Zunger, A.

S.-H. Wei and A. Zunger, “Giant and composition-dependent optical bowing coefficient in GaAsN alloys,” Phys. Rev. Lett.76(4), 664–667 (1996).
[CrossRef] [PubMed]

Appl. Phys. Lett. (5)

I. Suemune, K. Uesugi, and W. Walukiewicz, “Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs,” Appl. Phys. Lett.77(19), 3021–3023 (2000).
[CrossRef]

W. Orellana and A. C. Ferraz, “Ab initio study of substitutional nitrogen in GaAs,” Appl. Phys. Lett.78(9), 1231–1233 (2001).
[CrossRef]

T. Prokofyeva, T. Sauncy, M. Seon, M. Holtz, Y. Qiu, S. Nikishin, and H. Temkin, “Raman studies of nitrogen incorporation in GaAs1−xNx,” Appl. Phys. Lett.73(10), 1409–1411 (1998).
[CrossRef]

S. Francoeur, G. Sivaraman, Y. Qiu, S. Nikishin, and H. Temkin, “Luminescence of as-grown and thermally annealed GaAsN/GaAs,” Appl. Phys. Lett.72(15), 1857–1859 (1998).
[CrossRef]

V. Bondarenko, J. Gebauer, F. Redmann, and R. Krause-Rehberg, “Vacancy formation in GaAs under different equilibrium conditions,” Appl. Phys. Lett.87(16), 161906 (2005).
[CrossRef]

Cryst. Res. Technol. (1)

M. R. Islam, N. F. Chen, and M. Yamada, “Raman scattering study on Ga1-xMnx As prepared by Mn ions implantation, deposition and post-annealing,” Cryst. Res. Technol.44(2), 215–220 (2009).
[CrossRef]

J. Appl. Phys. (3)

K. M. Yu, S. V. Novikov, R. Broesler, I. N. Demchenko, J. D. Denlinger, Z. Liliental-Weber, F. Luckert, R. W. Martin, W. Walukiewicz, and C. T. Foxon, “Highly mismatched crystalline and amorphous GaN1−xAsx alloys in the whole composition range,” J. Appl. Phys.106(10), 103709 (2009).
[CrossRef]

M. Suezawa, A. Kasuya, Y. Nishina, and K. Sumino, “Excitation spectra of 1200 and 1320 nm photoluminescence lines in annealed gallium arsenide doped with silicon,” J. Appl. Phys.76(2), 1164–1168 (1994).
[CrossRef]

J. Liang, J. Jiang, J. Zhao, and Y. Gao, “Studies on 0.96 and 0.84 eV photoluminescence emissions in GaAs epilayers grown on Si,” J. Appl. Phys.79(9), 7173–7176 (1996).
[CrossRef]

J. Electrochem. Soc. (1)

W. Skorupa, T. Gebel, R. A. Yankov, S. Paul, W. Lerch, D. F. Downey, and E. A. Arevalo, “Advanced thermal processing of ultrashallow implanted junctions using flash lamp annealing,” J. Electrochem. Soc.152(6), G436–G440 (2005).
[CrossRef]

J. Phys. Condens. Matter (1)

H. Lei, H. S. Leipner, V. Bondarenko, and J. Schreiber, “Identification of the 0.95 eV luminescence band in n-type GaAs:Si,” J. Phys. Condens. Matter16(2), S279–S285 (2004).
[CrossRef]

Jpn. J. Appl. Phys. (2)

M. R. Islam, P. Verma, M. Yamada, M. Tatsumi, and K. Kinoshita, “Micro-Raman Characterization of Starting Material for Traveling Liquidus Zone Growth Method,” Jpn. J. Appl. Phys.41(Part 1, No. 2B), 991–995 (2002).
[CrossRef]

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[CrossRef]

Nucl. Instr. Method B (2)

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[CrossRef]

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Phys. Rev. B (3)

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[CrossRef]

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Phys. Rev. Lett. (2)

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Phys. Status Solidi C (1)

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[CrossRef]

Physica B (1)

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[CrossRef]

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Figures (3)

Fig. 1
Fig. 1

μ-Raman spectra of implanted and virgin SI-GaAs before and after flash lamp annealing for 20 ms. The spectra have been vertically offset for clarity.

Fig. 2
Fig. 2

Room temperature photoluminescence spectra obtained from virgin and implanted SI-GaAs samples after flash lamp annealing. Inset shows the scheme of energy levels and radiative transitions in annealed samples.

Fig. 3
Fig. 3

Maximum PL intensity at 1.3 μm as a function of temperature obtained from virgin and N or Mn doped GaAs after flash lamp annealing.

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