Abstract

ZnO-nanofilm/Si-micropillar p-n nanoheterostructure arrays were prepared by growing n-type ZnO onto a p-type nanoporous Si pillar array. Its current-voltage characteristics of nanoheterostructure showed good rectifying behavior with onset voltage of ~1.5 V, forward current density of ~28.7 mA/cm2 at 2.5 V, leakage current density of ~0.15 mA/cm2 and rectifying ratio of ~121 at ± 2.5 V. The electron transport across nanohetreostructure obeys the trap-charge-limit current model. Moreover, strong white light electroluminescence from ZnO-nanofilm/Si-micropillar light-emitting diode (LED) has been achieved, which could open up possibilities to build new ZnO/Si-based highly efficient solid-state lighting devices.

© 2012 OSA

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  1. Y. Wu, J. Xiang, C. Yang, W. Lu, and C. M. Lieber, “Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures,” Nature430(6995), 61–65 (2004).
    [CrossRef] [PubMed]
  2. Y. P. Hsieh, H. Y. Chen, M. Z. Lin, S. C. Shiu, M. Hofmann, M. Y. Chern, X. Jia, Y. J. Yang, H. J. Chang, H. M. Huang, S. C. Tseng, L. C. Chen, K. H. Chen, C. F. Lin, C. T. Liang, and Y. F. Chen, “Electroluminescence from ZnO/Si-nanotips light-emitting diodes,” Nano Lett.9(5), 1839–1843 (2009).
    [CrossRef] [PubMed]
  3. J. J. Dong, X. W. Zhang, Z. G. Yin, J. X. Wang, S. G. Zhang, F. T. Si, H. L. Gao, and X. Liu, “Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes,” Appl. Phys. Lett.100(17), 171109 (2012).
    [CrossRef]
  4. J. Zhang, Q. Zhang, T. Deng, and J. Wu, “Electrically driven ultraviolet lasing behavior from phosphorus-doped p-ZnO nanonail array/n-Si heterojunction,” Appl. Phys. Lett.95(21), 211107 (2009).
    [CrossRef]
  5. H. J. Xu, L. Su, Y. F. Chan, and X. M. Sun, “Structural and multiband photoluminescent properties of a hierarchical ZnO/Si nanoheterostructure,” J. Mater. Res.26(09), 1174–1178 (2011).
    [CrossRef]
  6. L. T. Canham, “Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers,” Appl. Phys. Lett.57(10), 1046–1048 (1990).
    [CrossRef]
  7. A. E. Rakhshani, “Optoelectronic properties of p-n and p-i-n heterojunction devices prepared by electrodeposition of n-ZnO on p-Si,” J. Appl. Phys.108(9), 094502 (2010).
    [CrossRef]
  8. S. T. Tan, X. W. Sun, J. L. Zhao, S. Iwan, Z. H. Cen, T. P. Chen, J. D. Ye, G. Q. Lo, D. L. Kwong, and K. L. Teo, “Ultraviolet and visible electroluminescence fromn-ZnO/SiOx/(n,p)-Si heterostructured light-emitting diodes,” Appl. Phys. Lett.93(1), 013506 (2008).
    [CrossRef]
  9. E. Nannen, T. Kummell, A. Ebbers, and G. Bacher, “p-Si/n-ZnO nanocrystal heterojunction light emitting device,” Appl. Phys. Express5(3), 035001 (2012).
    [CrossRef]
  10. S. W. Lee, H. D. Cho, G. Panin, and T. W. Kang, “Vertical ZnO nanorod/Si contact light-emitting diode,” Appl. Phys. Lett.98(9), 093110 (2011).
    [CrossRef]
  11. C. Periasamy and P. Chakrabarti, “Large-area and nanoscale n-ZnO/p-Si heterojunction photodetectors,” J. Vac. Sci. Technol. B29(5), 051206 (2011).
    [CrossRef]
  12. Z. Guo, D. Zhao, Y. Liu, D. Shen, J. Zhang, and B. Li, “Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n-Si heterojunction,” Appl. Phys. Lett.93(16), 163501 (2008).
    [CrossRef]
  13. H. J. Xu and X. J. Li, “Silicon nanoporous pillar array: a silicon hierarchical structure with high light absorption and triple-band photoluminescence,” Opt. Express16(5), 2933–2941 (2008).
    [CrossRef] [PubMed]
  14. Y. F. Chan, H. J. Xu, L. Cao, Y. Tang, D. Y. Li, and X. M. Sun, “ZnO/Si arrays decorated by Au nanoparticles for surface-enhanced Raman scattering study,” J. Appl. Phys.111(3), 033104 (2012).
    [CrossRef]
  15. L. Nilsson, O. Groening, C. Emmenegger, O. Kuettel, E. Schaller, L. Schlapbach, H. Kind, J.-M. Bonard, and K. Kern, “Scanning field emission from patterned carbon nanotube films,” Appl. Phys. Lett.76(15), 2071–2073 (2000).
    [CrossRef]
  16. H. P. Maruska, F. Namavar, and N. M. Kalkhoran, “Current injection mechanism for porous‐silicon transparent surface light‐emitting diodes,” Appl. Phys. Lett.61(11), 1338–1340 (1992).
    [CrossRef]
  17. P. O. Anikeeva, C. F. Madigan, J. E. Halpert, M. G. Bawendi, and V. Bulovic, “Electronic and excitonic processes in light-emitting devices based on organic materials and colloidal quantum dots,” Phys. Rev. B78(8), 085434 (2008).
    [CrossRef]
  18. J. M. Caruge, J. E. Halpert, V. Bulović, and M. G. Bawendi, “NiO as an inorganic hole-transporting layer in quantum-dot light-emitting devices,” Nano Lett.6(12), 2991–2994 (2006).
    [CrossRef] [PubMed]
  19. T. Toyama, H. Takeuchi, D. Yamaguchi, H. Kawasaki, K. Itatani, and H. Okamoto, “Solution-processed ZnO nanocrystals in thin-film light-emitting diodes for printed electronics,” J. Appl. Phys.108(8), 084302 (2010).
    [CrossRef]
  20. C. H. Ahn, Y. Y. Kim, D. C. Kim, S. K. Mohanta, and H. K. Cho, “A comparative analysis of deep level emission in ZnO layers deposited by various methods,” J. Appl. Phys.105(1), 013502 (2009).
    [CrossRef]
  21. N. H. Alvi, K. Ul Hasan, O. Nur, and M. Willander, “The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes,” Nanoscale Res. Lett.6(1), 130 (2011).
    [CrossRef] [PubMed]
  22. H. Zeng, G. Duan, Y. Li, S. Yang, X. Xu, and W. Cai, “Blue luminescence of ZnO nanoparticles based on non-equilibrium processes: defect origins and emission controls,” Adv. Funct. Mater.20(4), 561–572 (2010).
    [CrossRef]
  23. P. Klason, T. M. Borseth, Q. X. Zhao, B. G. Svensson, A. Y. Kuznetsov, P. J. Bergman, and M. Willander, “Temperature dependence and decay times of zinc and oxygen vacancy related photoluminescence bands in zinc oxide,” Solid State Commun.145(5-6), 321–326 (2008).
    [CrossRef]
  24. M. Willander, O. Nur, N. Bano, and K. Sultana, “Zinc oxide nanorod-based heterostructures on solid and soft substrates for white-light-emitting diode applications,” New J. Phys.11(12), 125020 (2009).
    [CrossRef]

2012 (3)

J. J. Dong, X. W. Zhang, Z. G. Yin, J. X. Wang, S. G. Zhang, F. T. Si, H. L. Gao, and X. Liu, “Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes,” Appl. Phys. Lett.100(17), 171109 (2012).
[CrossRef]

E. Nannen, T. Kummell, A. Ebbers, and G. Bacher, “p-Si/n-ZnO nanocrystal heterojunction light emitting device,” Appl. Phys. Express5(3), 035001 (2012).
[CrossRef]

Y. F. Chan, H. J. Xu, L. Cao, Y. Tang, D. Y. Li, and X. M. Sun, “ZnO/Si arrays decorated by Au nanoparticles for surface-enhanced Raman scattering study,” J. Appl. Phys.111(3), 033104 (2012).
[CrossRef]

2011 (4)

S. W. Lee, H. D. Cho, G. Panin, and T. W. Kang, “Vertical ZnO nanorod/Si contact light-emitting diode,” Appl. Phys. Lett.98(9), 093110 (2011).
[CrossRef]

C. Periasamy and P. Chakrabarti, “Large-area and nanoscale n-ZnO/p-Si heterojunction photodetectors,” J. Vac. Sci. Technol. B29(5), 051206 (2011).
[CrossRef]

H. J. Xu, L. Su, Y. F. Chan, and X. M. Sun, “Structural and multiband photoluminescent properties of a hierarchical ZnO/Si nanoheterostructure,” J. Mater. Res.26(09), 1174–1178 (2011).
[CrossRef]

N. H. Alvi, K. Ul Hasan, O. Nur, and M. Willander, “The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes,” Nanoscale Res. Lett.6(1), 130 (2011).
[CrossRef] [PubMed]

2010 (3)

H. Zeng, G. Duan, Y. Li, S. Yang, X. Xu, and W. Cai, “Blue luminescence of ZnO nanoparticles based on non-equilibrium processes: defect origins and emission controls,” Adv. Funct. Mater.20(4), 561–572 (2010).
[CrossRef]

T. Toyama, H. Takeuchi, D. Yamaguchi, H. Kawasaki, K. Itatani, and H. Okamoto, “Solution-processed ZnO nanocrystals in thin-film light-emitting diodes for printed electronics,” J. Appl. Phys.108(8), 084302 (2010).
[CrossRef]

A. E. Rakhshani, “Optoelectronic properties of p-n and p-i-n heterojunction devices prepared by electrodeposition of n-ZnO on p-Si,” J. Appl. Phys.108(9), 094502 (2010).
[CrossRef]

2009 (4)

J. Zhang, Q. Zhang, T. Deng, and J. Wu, “Electrically driven ultraviolet lasing behavior from phosphorus-doped p-ZnO nanonail array/n-Si heterojunction,” Appl. Phys. Lett.95(21), 211107 (2009).
[CrossRef]

Y. P. Hsieh, H. Y. Chen, M. Z. Lin, S. C. Shiu, M. Hofmann, M. Y. Chern, X. Jia, Y. J. Yang, H. J. Chang, H. M. Huang, S. C. Tseng, L. C. Chen, K. H. Chen, C. F. Lin, C. T. Liang, and Y. F. Chen, “Electroluminescence from ZnO/Si-nanotips light-emitting diodes,” Nano Lett.9(5), 1839–1843 (2009).
[CrossRef] [PubMed]

C. H. Ahn, Y. Y. Kim, D. C. Kim, S. K. Mohanta, and H. K. Cho, “A comparative analysis of deep level emission in ZnO layers deposited by various methods,” J. Appl. Phys.105(1), 013502 (2009).
[CrossRef]

M. Willander, O. Nur, N. Bano, and K. Sultana, “Zinc oxide nanorod-based heterostructures on solid and soft substrates for white-light-emitting diode applications,” New J. Phys.11(12), 125020 (2009).
[CrossRef]

2008 (5)

H. J. Xu and X. J. Li, “Silicon nanoporous pillar array: a silicon hierarchical structure with high light absorption and triple-band photoluminescence,” Opt. Express16(5), 2933–2941 (2008).
[CrossRef] [PubMed]

P. Klason, T. M. Borseth, Q. X. Zhao, B. G. Svensson, A. Y. Kuznetsov, P. J. Bergman, and M. Willander, “Temperature dependence and decay times of zinc and oxygen vacancy related photoluminescence bands in zinc oxide,” Solid State Commun.145(5-6), 321–326 (2008).
[CrossRef]

S. T. Tan, X. W. Sun, J. L. Zhao, S. Iwan, Z. H. Cen, T. P. Chen, J. D. Ye, G. Q. Lo, D. L. Kwong, and K. L. Teo, “Ultraviolet and visible electroluminescence fromn-ZnO/SiOx/(n,p)-Si heterostructured light-emitting diodes,” Appl. Phys. Lett.93(1), 013506 (2008).
[CrossRef]

Z. Guo, D. Zhao, Y. Liu, D. Shen, J. Zhang, and B. Li, “Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n-Si heterojunction,” Appl. Phys. Lett.93(16), 163501 (2008).
[CrossRef]

P. O. Anikeeva, C. F. Madigan, J. E. Halpert, M. G. Bawendi, and V. Bulovic, “Electronic and excitonic processes in light-emitting devices based on organic materials and colloidal quantum dots,” Phys. Rev. B78(8), 085434 (2008).
[CrossRef]

2006 (1)

J. M. Caruge, J. E. Halpert, V. Bulović, and M. G. Bawendi, “NiO as an inorganic hole-transporting layer in quantum-dot light-emitting devices,” Nano Lett.6(12), 2991–2994 (2006).
[CrossRef] [PubMed]

2004 (1)

Y. Wu, J. Xiang, C. Yang, W. Lu, and C. M. Lieber, “Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures,” Nature430(6995), 61–65 (2004).
[CrossRef] [PubMed]

2000 (1)

L. Nilsson, O. Groening, C. Emmenegger, O. Kuettel, E. Schaller, L. Schlapbach, H. Kind, J.-M. Bonard, and K. Kern, “Scanning field emission from patterned carbon nanotube films,” Appl. Phys. Lett.76(15), 2071–2073 (2000).
[CrossRef]

1992 (1)

H. P. Maruska, F. Namavar, and N. M. Kalkhoran, “Current injection mechanism for porous‐silicon transparent surface light‐emitting diodes,” Appl. Phys. Lett.61(11), 1338–1340 (1992).
[CrossRef]

1990 (1)

L. T. Canham, “Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers,” Appl. Phys. Lett.57(10), 1046–1048 (1990).
[CrossRef]

Ahn, C. H.

C. H. Ahn, Y. Y. Kim, D. C. Kim, S. K. Mohanta, and H. K. Cho, “A comparative analysis of deep level emission in ZnO layers deposited by various methods,” J. Appl. Phys.105(1), 013502 (2009).
[CrossRef]

Alvi, N. H.

N. H. Alvi, K. Ul Hasan, O. Nur, and M. Willander, “The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes,” Nanoscale Res. Lett.6(1), 130 (2011).
[CrossRef] [PubMed]

Anikeeva, P. O.

P. O. Anikeeva, C. F. Madigan, J. E. Halpert, M. G. Bawendi, and V. Bulovic, “Electronic and excitonic processes in light-emitting devices based on organic materials and colloidal quantum dots,” Phys. Rev. B78(8), 085434 (2008).
[CrossRef]

Bacher, G.

E. Nannen, T. Kummell, A. Ebbers, and G. Bacher, “p-Si/n-ZnO nanocrystal heterojunction light emitting device,” Appl. Phys. Express5(3), 035001 (2012).
[CrossRef]

Bano, N.

M. Willander, O. Nur, N. Bano, and K. Sultana, “Zinc oxide nanorod-based heterostructures on solid and soft substrates for white-light-emitting diode applications,” New J. Phys.11(12), 125020 (2009).
[CrossRef]

Bawendi, M. G.

P. O. Anikeeva, C. F. Madigan, J. E. Halpert, M. G. Bawendi, and V. Bulovic, “Electronic and excitonic processes in light-emitting devices based on organic materials and colloidal quantum dots,” Phys. Rev. B78(8), 085434 (2008).
[CrossRef]

J. M. Caruge, J. E. Halpert, V. Bulović, and M. G. Bawendi, “NiO as an inorganic hole-transporting layer in quantum-dot light-emitting devices,” Nano Lett.6(12), 2991–2994 (2006).
[CrossRef] [PubMed]

Bergman, P. J.

P. Klason, T. M. Borseth, Q. X. Zhao, B. G. Svensson, A. Y. Kuznetsov, P. J. Bergman, and M. Willander, “Temperature dependence and decay times of zinc and oxygen vacancy related photoluminescence bands in zinc oxide,” Solid State Commun.145(5-6), 321–326 (2008).
[CrossRef]

Bonard, J.-M.

L. Nilsson, O. Groening, C. Emmenegger, O. Kuettel, E. Schaller, L. Schlapbach, H. Kind, J.-M. Bonard, and K. Kern, “Scanning field emission from patterned carbon nanotube films,” Appl. Phys. Lett.76(15), 2071–2073 (2000).
[CrossRef]

Borseth, T. M.

P. Klason, T. M. Borseth, Q. X. Zhao, B. G. Svensson, A. Y. Kuznetsov, P. J. Bergman, and M. Willander, “Temperature dependence and decay times of zinc and oxygen vacancy related photoluminescence bands in zinc oxide,” Solid State Commun.145(5-6), 321–326 (2008).
[CrossRef]

Bulovic, V.

P. O. Anikeeva, C. F. Madigan, J. E. Halpert, M. G. Bawendi, and V. Bulovic, “Electronic and excitonic processes in light-emitting devices based on organic materials and colloidal quantum dots,” Phys. Rev. B78(8), 085434 (2008).
[CrossRef]

J. M. Caruge, J. E. Halpert, V. Bulović, and M. G. Bawendi, “NiO as an inorganic hole-transporting layer in quantum-dot light-emitting devices,” Nano Lett.6(12), 2991–2994 (2006).
[CrossRef] [PubMed]

Cai, W.

H. Zeng, G. Duan, Y. Li, S. Yang, X. Xu, and W. Cai, “Blue luminescence of ZnO nanoparticles based on non-equilibrium processes: defect origins and emission controls,” Adv. Funct. Mater.20(4), 561–572 (2010).
[CrossRef]

Canham, L. T.

L. T. Canham, “Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers,” Appl. Phys. Lett.57(10), 1046–1048 (1990).
[CrossRef]

Cao, L.

Y. F. Chan, H. J. Xu, L. Cao, Y. Tang, D. Y. Li, and X. M. Sun, “ZnO/Si arrays decorated by Au nanoparticles for surface-enhanced Raman scattering study,” J. Appl. Phys.111(3), 033104 (2012).
[CrossRef]

Caruge, J. M.

J. M. Caruge, J. E. Halpert, V. Bulović, and M. G. Bawendi, “NiO as an inorganic hole-transporting layer in quantum-dot light-emitting devices,” Nano Lett.6(12), 2991–2994 (2006).
[CrossRef] [PubMed]

Cen, Z. H.

S. T. Tan, X. W. Sun, J. L. Zhao, S. Iwan, Z. H. Cen, T. P. Chen, J. D. Ye, G. Q. Lo, D. L. Kwong, and K. L. Teo, “Ultraviolet and visible electroluminescence fromn-ZnO/SiOx/(n,p)-Si heterostructured light-emitting diodes,” Appl. Phys. Lett.93(1), 013506 (2008).
[CrossRef]

Chakrabarti, P.

C. Periasamy and P. Chakrabarti, “Large-area and nanoscale n-ZnO/p-Si heterojunction photodetectors,” J. Vac. Sci. Technol. B29(5), 051206 (2011).
[CrossRef]

Chan, Y. F.

Y. F. Chan, H. J. Xu, L. Cao, Y. Tang, D. Y. Li, and X. M. Sun, “ZnO/Si arrays decorated by Au nanoparticles for surface-enhanced Raman scattering study,” J. Appl. Phys.111(3), 033104 (2012).
[CrossRef]

H. J. Xu, L. Su, Y. F. Chan, and X. M. Sun, “Structural and multiband photoluminescent properties of a hierarchical ZnO/Si nanoheterostructure,” J. Mater. Res.26(09), 1174–1178 (2011).
[CrossRef]

Chang, H. J.

Y. P. Hsieh, H. Y. Chen, M. Z. Lin, S. C. Shiu, M. Hofmann, M. Y. Chern, X. Jia, Y. J. Yang, H. J. Chang, H. M. Huang, S. C. Tseng, L. C. Chen, K. H. Chen, C. F. Lin, C. T. Liang, and Y. F. Chen, “Electroluminescence from ZnO/Si-nanotips light-emitting diodes,” Nano Lett.9(5), 1839–1843 (2009).
[CrossRef] [PubMed]

Chen, H. Y.

Y. P. Hsieh, H. Y. Chen, M. Z. Lin, S. C. Shiu, M. Hofmann, M. Y. Chern, X. Jia, Y. J. Yang, H. J. Chang, H. M. Huang, S. C. Tseng, L. C. Chen, K. H. Chen, C. F. Lin, C. T. Liang, and Y. F. Chen, “Electroluminescence from ZnO/Si-nanotips light-emitting diodes,” Nano Lett.9(5), 1839–1843 (2009).
[CrossRef] [PubMed]

Chen, K. H.

Y. P. Hsieh, H. Y. Chen, M. Z. Lin, S. C. Shiu, M. Hofmann, M. Y. Chern, X. Jia, Y. J. Yang, H. J. Chang, H. M. Huang, S. C. Tseng, L. C. Chen, K. H. Chen, C. F. Lin, C. T. Liang, and Y. F. Chen, “Electroluminescence from ZnO/Si-nanotips light-emitting diodes,” Nano Lett.9(5), 1839–1843 (2009).
[CrossRef] [PubMed]

Chen, L. C.

Y. P. Hsieh, H. Y. Chen, M. Z. Lin, S. C. Shiu, M. Hofmann, M. Y. Chern, X. Jia, Y. J. Yang, H. J. Chang, H. M. Huang, S. C. Tseng, L. C. Chen, K. H. Chen, C. F. Lin, C. T. Liang, and Y. F. Chen, “Electroluminescence from ZnO/Si-nanotips light-emitting diodes,” Nano Lett.9(5), 1839–1843 (2009).
[CrossRef] [PubMed]

Chen, T. P.

S. T. Tan, X. W. Sun, J. L. Zhao, S. Iwan, Z. H. Cen, T. P. Chen, J. D. Ye, G. Q. Lo, D. L. Kwong, and K. L. Teo, “Ultraviolet and visible electroluminescence fromn-ZnO/SiOx/(n,p)-Si heterostructured light-emitting diodes,” Appl. Phys. Lett.93(1), 013506 (2008).
[CrossRef]

Chen, Y. F.

Y. P. Hsieh, H. Y. Chen, M. Z. Lin, S. C. Shiu, M. Hofmann, M. Y. Chern, X. Jia, Y. J. Yang, H. J. Chang, H. M. Huang, S. C. Tseng, L. C. Chen, K. H. Chen, C. F. Lin, C. T. Liang, and Y. F. Chen, “Electroluminescence from ZnO/Si-nanotips light-emitting diodes,” Nano Lett.9(5), 1839–1843 (2009).
[CrossRef] [PubMed]

Chern, M. Y.

Y. P. Hsieh, H. Y. Chen, M. Z. Lin, S. C. Shiu, M. Hofmann, M. Y. Chern, X. Jia, Y. J. Yang, H. J. Chang, H. M. Huang, S. C. Tseng, L. C. Chen, K. H. Chen, C. F. Lin, C. T. Liang, and Y. F. Chen, “Electroluminescence from ZnO/Si-nanotips light-emitting diodes,” Nano Lett.9(5), 1839–1843 (2009).
[CrossRef] [PubMed]

Cho, H. D.

S. W. Lee, H. D. Cho, G. Panin, and T. W. Kang, “Vertical ZnO nanorod/Si contact light-emitting diode,” Appl. Phys. Lett.98(9), 093110 (2011).
[CrossRef]

Cho, H. K.

C. H. Ahn, Y. Y. Kim, D. C. Kim, S. K. Mohanta, and H. K. Cho, “A comparative analysis of deep level emission in ZnO layers deposited by various methods,” J. Appl. Phys.105(1), 013502 (2009).
[CrossRef]

Deng, T.

J. Zhang, Q. Zhang, T. Deng, and J. Wu, “Electrically driven ultraviolet lasing behavior from phosphorus-doped p-ZnO nanonail array/n-Si heterojunction,” Appl. Phys. Lett.95(21), 211107 (2009).
[CrossRef]

Dong, J. J.

J. J. Dong, X. W. Zhang, Z. G. Yin, J. X. Wang, S. G. Zhang, F. T. Si, H. L. Gao, and X. Liu, “Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes,” Appl. Phys. Lett.100(17), 171109 (2012).
[CrossRef]

Duan, G.

H. Zeng, G. Duan, Y. Li, S. Yang, X. Xu, and W. Cai, “Blue luminescence of ZnO nanoparticles based on non-equilibrium processes: defect origins and emission controls,” Adv. Funct. Mater.20(4), 561–572 (2010).
[CrossRef]

Ebbers, A.

E. Nannen, T. Kummell, A. Ebbers, and G. Bacher, “p-Si/n-ZnO nanocrystal heterojunction light emitting device,” Appl. Phys. Express5(3), 035001 (2012).
[CrossRef]

Emmenegger, C.

L. Nilsson, O. Groening, C. Emmenegger, O. Kuettel, E. Schaller, L. Schlapbach, H. Kind, J.-M. Bonard, and K. Kern, “Scanning field emission from patterned carbon nanotube films,” Appl. Phys. Lett.76(15), 2071–2073 (2000).
[CrossRef]

Gao, H. L.

J. J. Dong, X. W. Zhang, Z. G. Yin, J. X. Wang, S. G. Zhang, F. T. Si, H. L. Gao, and X. Liu, “Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes,” Appl. Phys. Lett.100(17), 171109 (2012).
[CrossRef]

Groening, O.

L. Nilsson, O. Groening, C. Emmenegger, O. Kuettel, E. Schaller, L. Schlapbach, H. Kind, J.-M. Bonard, and K. Kern, “Scanning field emission from patterned carbon nanotube films,” Appl. Phys. Lett.76(15), 2071–2073 (2000).
[CrossRef]

Guo, Z.

Z. Guo, D. Zhao, Y. Liu, D. Shen, J. Zhang, and B. Li, “Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n-Si heterojunction,” Appl. Phys. Lett.93(16), 163501 (2008).
[CrossRef]

Halpert, J. E.

P. O. Anikeeva, C. F. Madigan, J. E. Halpert, M. G. Bawendi, and V. Bulovic, “Electronic and excitonic processes in light-emitting devices based on organic materials and colloidal quantum dots,” Phys. Rev. B78(8), 085434 (2008).
[CrossRef]

J. M. Caruge, J. E. Halpert, V. Bulović, and M. G. Bawendi, “NiO as an inorganic hole-transporting layer in quantum-dot light-emitting devices,” Nano Lett.6(12), 2991–2994 (2006).
[CrossRef] [PubMed]

Hofmann, M.

Y. P. Hsieh, H. Y. Chen, M. Z. Lin, S. C. Shiu, M. Hofmann, M. Y. Chern, X. Jia, Y. J. Yang, H. J. Chang, H. M. Huang, S. C. Tseng, L. C. Chen, K. H. Chen, C. F. Lin, C. T. Liang, and Y. F. Chen, “Electroluminescence from ZnO/Si-nanotips light-emitting diodes,” Nano Lett.9(5), 1839–1843 (2009).
[CrossRef] [PubMed]

Hsieh, Y. P.

Y. P. Hsieh, H. Y. Chen, M. Z. Lin, S. C. Shiu, M. Hofmann, M. Y. Chern, X. Jia, Y. J. Yang, H. J. Chang, H. M. Huang, S. C. Tseng, L. C. Chen, K. H. Chen, C. F. Lin, C. T. Liang, and Y. F. Chen, “Electroluminescence from ZnO/Si-nanotips light-emitting diodes,” Nano Lett.9(5), 1839–1843 (2009).
[CrossRef] [PubMed]

Huang, H. M.

Y. P. Hsieh, H. Y. Chen, M. Z. Lin, S. C. Shiu, M. Hofmann, M. Y. Chern, X. Jia, Y. J. Yang, H. J. Chang, H. M. Huang, S. C. Tseng, L. C. Chen, K. H. Chen, C. F. Lin, C. T. Liang, and Y. F. Chen, “Electroluminescence from ZnO/Si-nanotips light-emitting diodes,” Nano Lett.9(5), 1839–1843 (2009).
[CrossRef] [PubMed]

Itatani, K.

T. Toyama, H. Takeuchi, D. Yamaguchi, H. Kawasaki, K. Itatani, and H. Okamoto, “Solution-processed ZnO nanocrystals in thin-film light-emitting diodes for printed electronics,” J. Appl. Phys.108(8), 084302 (2010).
[CrossRef]

Iwan, S.

S. T. Tan, X. W. Sun, J. L. Zhao, S. Iwan, Z. H. Cen, T. P. Chen, J. D. Ye, G. Q. Lo, D. L. Kwong, and K. L. Teo, “Ultraviolet and visible electroluminescence fromn-ZnO/SiOx/(n,p)-Si heterostructured light-emitting diodes,” Appl. Phys. Lett.93(1), 013506 (2008).
[CrossRef]

Jia, X.

Y. P. Hsieh, H. Y. Chen, M. Z. Lin, S. C. Shiu, M. Hofmann, M. Y. Chern, X. Jia, Y. J. Yang, H. J. Chang, H. M. Huang, S. C. Tseng, L. C. Chen, K. H. Chen, C. F. Lin, C. T. Liang, and Y. F. Chen, “Electroluminescence from ZnO/Si-nanotips light-emitting diodes,” Nano Lett.9(5), 1839–1843 (2009).
[CrossRef] [PubMed]

Kalkhoran, N. M.

H. P. Maruska, F. Namavar, and N. M. Kalkhoran, “Current injection mechanism for porous‐silicon transparent surface light‐emitting diodes,” Appl. Phys. Lett.61(11), 1338–1340 (1992).
[CrossRef]

Kang, T. W.

S. W. Lee, H. D. Cho, G. Panin, and T. W. Kang, “Vertical ZnO nanorod/Si contact light-emitting diode,” Appl. Phys. Lett.98(9), 093110 (2011).
[CrossRef]

Kawasaki, H.

T. Toyama, H. Takeuchi, D. Yamaguchi, H. Kawasaki, K. Itatani, and H. Okamoto, “Solution-processed ZnO nanocrystals in thin-film light-emitting diodes for printed electronics,” J. Appl. Phys.108(8), 084302 (2010).
[CrossRef]

Kern, K.

L. Nilsson, O. Groening, C. Emmenegger, O. Kuettel, E. Schaller, L. Schlapbach, H. Kind, J.-M. Bonard, and K. Kern, “Scanning field emission from patterned carbon nanotube films,” Appl. Phys. Lett.76(15), 2071–2073 (2000).
[CrossRef]

Kim, D. C.

C. H. Ahn, Y. Y. Kim, D. C. Kim, S. K. Mohanta, and H. K. Cho, “A comparative analysis of deep level emission in ZnO layers deposited by various methods,” J. Appl. Phys.105(1), 013502 (2009).
[CrossRef]

Kim, Y. Y.

C. H. Ahn, Y. Y. Kim, D. C. Kim, S. K. Mohanta, and H. K. Cho, “A comparative analysis of deep level emission in ZnO layers deposited by various methods,” J. Appl. Phys.105(1), 013502 (2009).
[CrossRef]

Kind, H.

L. Nilsson, O. Groening, C. Emmenegger, O. Kuettel, E. Schaller, L. Schlapbach, H. Kind, J.-M. Bonard, and K. Kern, “Scanning field emission from patterned carbon nanotube films,” Appl. Phys. Lett.76(15), 2071–2073 (2000).
[CrossRef]

Klason, P.

P. Klason, T. M. Borseth, Q. X. Zhao, B. G. Svensson, A. Y. Kuznetsov, P. J. Bergman, and M. Willander, “Temperature dependence and decay times of zinc and oxygen vacancy related photoluminescence bands in zinc oxide,” Solid State Commun.145(5-6), 321–326 (2008).
[CrossRef]

Kuettel, O.

L. Nilsson, O. Groening, C. Emmenegger, O. Kuettel, E. Schaller, L. Schlapbach, H. Kind, J.-M. Bonard, and K. Kern, “Scanning field emission from patterned carbon nanotube films,” Appl. Phys. Lett.76(15), 2071–2073 (2000).
[CrossRef]

Kummell, T.

E. Nannen, T. Kummell, A. Ebbers, and G. Bacher, “p-Si/n-ZnO nanocrystal heterojunction light emitting device,” Appl. Phys. Express5(3), 035001 (2012).
[CrossRef]

Kuznetsov, A. Y.

P. Klason, T. M. Borseth, Q. X. Zhao, B. G. Svensson, A. Y. Kuznetsov, P. J. Bergman, and M. Willander, “Temperature dependence and decay times of zinc and oxygen vacancy related photoluminescence bands in zinc oxide,” Solid State Commun.145(5-6), 321–326 (2008).
[CrossRef]

Kwong, D. L.

S. T. Tan, X. W. Sun, J. L. Zhao, S. Iwan, Z. H. Cen, T. P. Chen, J. D. Ye, G. Q. Lo, D. L. Kwong, and K. L. Teo, “Ultraviolet and visible electroluminescence fromn-ZnO/SiOx/(n,p)-Si heterostructured light-emitting diodes,” Appl. Phys. Lett.93(1), 013506 (2008).
[CrossRef]

Lee, S. W.

S. W. Lee, H. D. Cho, G. Panin, and T. W. Kang, “Vertical ZnO nanorod/Si contact light-emitting diode,” Appl. Phys. Lett.98(9), 093110 (2011).
[CrossRef]

Li, B.

Z. Guo, D. Zhao, Y. Liu, D. Shen, J. Zhang, and B. Li, “Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n-Si heterojunction,” Appl. Phys. Lett.93(16), 163501 (2008).
[CrossRef]

Li, D. Y.

Y. F. Chan, H. J. Xu, L. Cao, Y. Tang, D. Y. Li, and X. M. Sun, “ZnO/Si arrays decorated by Au nanoparticles for surface-enhanced Raman scattering study,” J. Appl. Phys.111(3), 033104 (2012).
[CrossRef]

Li, X. J.

Li, Y.

H. Zeng, G. Duan, Y. Li, S. Yang, X. Xu, and W. Cai, “Blue luminescence of ZnO nanoparticles based on non-equilibrium processes: defect origins and emission controls,” Adv. Funct. Mater.20(4), 561–572 (2010).
[CrossRef]

Liang, C. T.

Y. P. Hsieh, H. Y. Chen, M. Z. Lin, S. C. Shiu, M. Hofmann, M. Y. Chern, X. Jia, Y. J. Yang, H. J. Chang, H. M. Huang, S. C. Tseng, L. C. Chen, K. H. Chen, C. F. Lin, C. T. Liang, and Y. F. Chen, “Electroluminescence from ZnO/Si-nanotips light-emitting diodes,” Nano Lett.9(5), 1839–1843 (2009).
[CrossRef] [PubMed]

Lieber, C. M.

Y. Wu, J. Xiang, C. Yang, W. Lu, and C. M. Lieber, “Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures,” Nature430(6995), 61–65 (2004).
[CrossRef] [PubMed]

Lin, C. F.

Y. P. Hsieh, H. Y. Chen, M. Z. Lin, S. C. Shiu, M. Hofmann, M. Y. Chern, X. Jia, Y. J. Yang, H. J. Chang, H. M. Huang, S. C. Tseng, L. C. Chen, K. H. Chen, C. F. Lin, C. T. Liang, and Y. F. Chen, “Electroluminescence from ZnO/Si-nanotips light-emitting diodes,” Nano Lett.9(5), 1839–1843 (2009).
[CrossRef] [PubMed]

Lin, M. Z.

Y. P. Hsieh, H. Y. Chen, M. Z. Lin, S. C. Shiu, M. Hofmann, M. Y. Chern, X. Jia, Y. J. Yang, H. J. Chang, H. M. Huang, S. C. Tseng, L. C. Chen, K. H. Chen, C. F. Lin, C. T. Liang, and Y. F. Chen, “Electroluminescence from ZnO/Si-nanotips light-emitting diodes,” Nano Lett.9(5), 1839–1843 (2009).
[CrossRef] [PubMed]

Liu, X.

J. J. Dong, X. W. Zhang, Z. G. Yin, J. X. Wang, S. G. Zhang, F. T. Si, H. L. Gao, and X. Liu, “Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes,” Appl. Phys. Lett.100(17), 171109 (2012).
[CrossRef]

Liu, Y.

Z. Guo, D. Zhao, Y. Liu, D. Shen, J. Zhang, and B. Li, “Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n-Si heterojunction,” Appl. Phys. Lett.93(16), 163501 (2008).
[CrossRef]

Lo, G. Q.

S. T. Tan, X. W. Sun, J. L. Zhao, S. Iwan, Z. H. Cen, T. P. Chen, J. D. Ye, G. Q. Lo, D. L. Kwong, and K. L. Teo, “Ultraviolet and visible electroluminescence fromn-ZnO/SiOx/(n,p)-Si heterostructured light-emitting diodes,” Appl. Phys. Lett.93(1), 013506 (2008).
[CrossRef]

Lu, W.

Y. Wu, J. Xiang, C. Yang, W. Lu, and C. M. Lieber, “Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures,” Nature430(6995), 61–65 (2004).
[CrossRef] [PubMed]

Madigan, C. F.

P. O. Anikeeva, C. F. Madigan, J. E. Halpert, M. G. Bawendi, and V. Bulovic, “Electronic and excitonic processes in light-emitting devices based on organic materials and colloidal quantum dots,” Phys. Rev. B78(8), 085434 (2008).
[CrossRef]

Maruska, H. P.

H. P. Maruska, F. Namavar, and N. M. Kalkhoran, “Current injection mechanism for porous‐silicon transparent surface light‐emitting diodes,” Appl. Phys. Lett.61(11), 1338–1340 (1992).
[CrossRef]

Mohanta, S. K.

C. H. Ahn, Y. Y. Kim, D. C. Kim, S. K. Mohanta, and H. K. Cho, “A comparative analysis of deep level emission in ZnO layers deposited by various methods,” J. Appl. Phys.105(1), 013502 (2009).
[CrossRef]

Namavar, F.

H. P. Maruska, F. Namavar, and N. M. Kalkhoran, “Current injection mechanism for porous‐silicon transparent surface light‐emitting diodes,” Appl. Phys. Lett.61(11), 1338–1340 (1992).
[CrossRef]

Nannen, E.

E. Nannen, T. Kummell, A. Ebbers, and G. Bacher, “p-Si/n-ZnO nanocrystal heterojunction light emitting device,” Appl. Phys. Express5(3), 035001 (2012).
[CrossRef]

Nilsson, L.

L. Nilsson, O. Groening, C. Emmenegger, O. Kuettel, E. Schaller, L. Schlapbach, H. Kind, J.-M. Bonard, and K. Kern, “Scanning field emission from patterned carbon nanotube films,” Appl. Phys. Lett.76(15), 2071–2073 (2000).
[CrossRef]

Nur, O.

N. H. Alvi, K. Ul Hasan, O. Nur, and M. Willander, “The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes,” Nanoscale Res. Lett.6(1), 130 (2011).
[CrossRef] [PubMed]

M. Willander, O. Nur, N. Bano, and K. Sultana, “Zinc oxide nanorod-based heterostructures on solid and soft substrates for white-light-emitting diode applications,” New J. Phys.11(12), 125020 (2009).
[CrossRef]

Okamoto, H.

T. Toyama, H. Takeuchi, D. Yamaguchi, H. Kawasaki, K. Itatani, and H. Okamoto, “Solution-processed ZnO nanocrystals in thin-film light-emitting diodes for printed electronics,” J. Appl. Phys.108(8), 084302 (2010).
[CrossRef]

Panin, G.

S. W. Lee, H. D. Cho, G. Panin, and T. W. Kang, “Vertical ZnO nanorod/Si contact light-emitting diode,” Appl. Phys. Lett.98(9), 093110 (2011).
[CrossRef]

Periasamy, C.

C. Periasamy and P. Chakrabarti, “Large-area and nanoscale n-ZnO/p-Si heterojunction photodetectors,” J. Vac. Sci. Technol. B29(5), 051206 (2011).
[CrossRef]

Rakhshani, A. E.

A. E. Rakhshani, “Optoelectronic properties of p-n and p-i-n heterojunction devices prepared by electrodeposition of n-ZnO on p-Si,” J. Appl. Phys.108(9), 094502 (2010).
[CrossRef]

Schaller, E.

L. Nilsson, O. Groening, C. Emmenegger, O. Kuettel, E. Schaller, L. Schlapbach, H. Kind, J.-M. Bonard, and K. Kern, “Scanning field emission from patterned carbon nanotube films,” Appl. Phys. Lett.76(15), 2071–2073 (2000).
[CrossRef]

Schlapbach, L.

L. Nilsson, O. Groening, C. Emmenegger, O. Kuettel, E. Schaller, L. Schlapbach, H. Kind, J.-M. Bonard, and K. Kern, “Scanning field emission from patterned carbon nanotube films,” Appl. Phys. Lett.76(15), 2071–2073 (2000).
[CrossRef]

Shen, D.

Z. Guo, D. Zhao, Y. Liu, D. Shen, J. Zhang, and B. Li, “Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n-Si heterojunction,” Appl. Phys. Lett.93(16), 163501 (2008).
[CrossRef]

Shiu, S. C.

Y. P. Hsieh, H. Y. Chen, M. Z. Lin, S. C. Shiu, M. Hofmann, M. Y. Chern, X. Jia, Y. J. Yang, H. J. Chang, H. M. Huang, S. C. Tseng, L. C. Chen, K. H. Chen, C. F. Lin, C. T. Liang, and Y. F. Chen, “Electroluminescence from ZnO/Si-nanotips light-emitting diodes,” Nano Lett.9(5), 1839–1843 (2009).
[CrossRef] [PubMed]

Si, F. T.

J. J. Dong, X. W. Zhang, Z. G. Yin, J. X. Wang, S. G. Zhang, F. T. Si, H. L. Gao, and X. Liu, “Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes,” Appl. Phys. Lett.100(17), 171109 (2012).
[CrossRef]

Su, L.

H. J. Xu, L. Su, Y. F. Chan, and X. M. Sun, “Structural and multiband photoluminescent properties of a hierarchical ZnO/Si nanoheterostructure,” J. Mater. Res.26(09), 1174–1178 (2011).
[CrossRef]

Sultana, K.

M. Willander, O. Nur, N. Bano, and K. Sultana, “Zinc oxide nanorod-based heterostructures on solid and soft substrates for white-light-emitting diode applications,” New J. Phys.11(12), 125020 (2009).
[CrossRef]

Sun, X. M.

Y. F. Chan, H. J. Xu, L. Cao, Y. Tang, D. Y. Li, and X. M. Sun, “ZnO/Si arrays decorated by Au nanoparticles for surface-enhanced Raman scattering study,” J. Appl. Phys.111(3), 033104 (2012).
[CrossRef]

H. J. Xu, L. Su, Y. F. Chan, and X. M. Sun, “Structural and multiband photoluminescent properties of a hierarchical ZnO/Si nanoheterostructure,” J. Mater. Res.26(09), 1174–1178 (2011).
[CrossRef]

Sun, X. W.

S. T. Tan, X. W. Sun, J. L. Zhao, S. Iwan, Z. H. Cen, T. P. Chen, J. D. Ye, G. Q. Lo, D. L. Kwong, and K. L. Teo, “Ultraviolet and visible electroluminescence fromn-ZnO/SiOx/(n,p)-Si heterostructured light-emitting diodes,” Appl. Phys. Lett.93(1), 013506 (2008).
[CrossRef]

Svensson, B. G.

P. Klason, T. M. Borseth, Q. X. Zhao, B. G. Svensson, A. Y. Kuznetsov, P. J. Bergman, and M. Willander, “Temperature dependence and decay times of zinc and oxygen vacancy related photoluminescence bands in zinc oxide,” Solid State Commun.145(5-6), 321–326 (2008).
[CrossRef]

Takeuchi, H.

T. Toyama, H. Takeuchi, D. Yamaguchi, H. Kawasaki, K. Itatani, and H. Okamoto, “Solution-processed ZnO nanocrystals in thin-film light-emitting diodes for printed electronics,” J. Appl. Phys.108(8), 084302 (2010).
[CrossRef]

Tan, S. T.

S. T. Tan, X. W. Sun, J. L. Zhao, S. Iwan, Z. H. Cen, T. P. Chen, J. D. Ye, G. Q. Lo, D. L. Kwong, and K. L. Teo, “Ultraviolet and visible electroluminescence fromn-ZnO/SiOx/(n,p)-Si heterostructured light-emitting diodes,” Appl. Phys. Lett.93(1), 013506 (2008).
[CrossRef]

Tang, Y.

Y. F. Chan, H. J. Xu, L. Cao, Y. Tang, D. Y. Li, and X. M. Sun, “ZnO/Si arrays decorated by Au nanoparticles for surface-enhanced Raman scattering study,” J. Appl. Phys.111(3), 033104 (2012).
[CrossRef]

Teo, K. L.

S. T. Tan, X. W. Sun, J. L. Zhao, S. Iwan, Z. H. Cen, T. P. Chen, J. D. Ye, G. Q. Lo, D. L. Kwong, and K. L. Teo, “Ultraviolet and visible electroluminescence fromn-ZnO/SiOx/(n,p)-Si heterostructured light-emitting diodes,” Appl. Phys. Lett.93(1), 013506 (2008).
[CrossRef]

Toyama, T.

T. Toyama, H. Takeuchi, D. Yamaguchi, H. Kawasaki, K. Itatani, and H. Okamoto, “Solution-processed ZnO nanocrystals in thin-film light-emitting diodes for printed electronics,” J. Appl. Phys.108(8), 084302 (2010).
[CrossRef]

Tseng, S. C.

Y. P. Hsieh, H. Y. Chen, M. Z. Lin, S. C. Shiu, M. Hofmann, M. Y. Chern, X. Jia, Y. J. Yang, H. J. Chang, H. M. Huang, S. C. Tseng, L. C. Chen, K. H. Chen, C. F. Lin, C. T. Liang, and Y. F. Chen, “Electroluminescence from ZnO/Si-nanotips light-emitting diodes,” Nano Lett.9(5), 1839–1843 (2009).
[CrossRef] [PubMed]

Ul Hasan, K.

N. H. Alvi, K. Ul Hasan, O. Nur, and M. Willander, “The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes,” Nanoscale Res. Lett.6(1), 130 (2011).
[CrossRef] [PubMed]

Wang, J. X.

J. J. Dong, X. W. Zhang, Z. G. Yin, J. X. Wang, S. G. Zhang, F. T. Si, H. L. Gao, and X. Liu, “Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes,” Appl. Phys. Lett.100(17), 171109 (2012).
[CrossRef]

Willander, M.

N. H. Alvi, K. Ul Hasan, O. Nur, and M. Willander, “The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes,” Nanoscale Res. Lett.6(1), 130 (2011).
[CrossRef] [PubMed]

M. Willander, O. Nur, N. Bano, and K. Sultana, “Zinc oxide nanorod-based heterostructures on solid and soft substrates for white-light-emitting diode applications,” New J. Phys.11(12), 125020 (2009).
[CrossRef]

P. Klason, T. M. Borseth, Q. X. Zhao, B. G. Svensson, A. Y. Kuznetsov, P. J. Bergman, and M. Willander, “Temperature dependence and decay times of zinc and oxygen vacancy related photoluminescence bands in zinc oxide,” Solid State Commun.145(5-6), 321–326 (2008).
[CrossRef]

Wu, J.

J. Zhang, Q. Zhang, T. Deng, and J. Wu, “Electrically driven ultraviolet lasing behavior from phosphorus-doped p-ZnO nanonail array/n-Si heterojunction,” Appl. Phys. Lett.95(21), 211107 (2009).
[CrossRef]

Wu, Y.

Y. Wu, J. Xiang, C. Yang, W. Lu, and C. M. Lieber, “Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures,” Nature430(6995), 61–65 (2004).
[CrossRef] [PubMed]

Xiang, J.

Y. Wu, J. Xiang, C. Yang, W. Lu, and C. M. Lieber, “Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures,” Nature430(6995), 61–65 (2004).
[CrossRef] [PubMed]

Xu, H. J.

Y. F. Chan, H. J. Xu, L. Cao, Y. Tang, D. Y. Li, and X. M. Sun, “ZnO/Si arrays decorated by Au nanoparticles for surface-enhanced Raman scattering study,” J. Appl. Phys.111(3), 033104 (2012).
[CrossRef]

H. J. Xu, L. Su, Y. F. Chan, and X. M. Sun, “Structural and multiband photoluminescent properties of a hierarchical ZnO/Si nanoheterostructure,” J. Mater. Res.26(09), 1174–1178 (2011).
[CrossRef]

H. J. Xu and X. J. Li, “Silicon nanoporous pillar array: a silicon hierarchical structure with high light absorption and triple-band photoluminescence,” Opt. Express16(5), 2933–2941 (2008).
[CrossRef] [PubMed]

Xu, X.

H. Zeng, G. Duan, Y. Li, S. Yang, X. Xu, and W. Cai, “Blue luminescence of ZnO nanoparticles based on non-equilibrium processes: defect origins and emission controls,” Adv. Funct. Mater.20(4), 561–572 (2010).
[CrossRef]

Yamaguchi, D.

T. Toyama, H. Takeuchi, D. Yamaguchi, H. Kawasaki, K. Itatani, and H. Okamoto, “Solution-processed ZnO nanocrystals in thin-film light-emitting diodes for printed electronics,” J. Appl. Phys.108(8), 084302 (2010).
[CrossRef]

Yang, C.

Y. Wu, J. Xiang, C. Yang, W. Lu, and C. M. Lieber, “Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures,” Nature430(6995), 61–65 (2004).
[CrossRef] [PubMed]

Yang, S.

H. Zeng, G. Duan, Y. Li, S. Yang, X. Xu, and W. Cai, “Blue luminescence of ZnO nanoparticles based on non-equilibrium processes: defect origins and emission controls,” Adv. Funct. Mater.20(4), 561–572 (2010).
[CrossRef]

Yang, Y. J.

Y. P. Hsieh, H. Y. Chen, M. Z. Lin, S. C. Shiu, M. Hofmann, M. Y. Chern, X. Jia, Y. J. Yang, H. J. Chang, H. M. Huang, S. C. Tseng, L. C. Chen, K. H. Chen, C. F. Lin, C. T. Liang, and Y. F. Chen, “Electroluminescence from ZnO/Si-nanotips light-emitting diodes,” Nano Lett.9(5), 1839–1843 (2009).
[CrossRef] [PubMed]

Ye, J. D.

S. T. Tan, X. W. Sun, J. L. Zhao, S. Iwan, Z. H. Cen, T. P. Chen, J. D. Ye, G. Q. Lo, D. L. Kwong, and K. L. Teo, “Ultraviolet and visible electroluminescence fromn-ZnO/SiOx/(n,p)-Si heterostructured light-emitting diodes,” Appl. Phys. Lett.93(1), 013506 (2008).
[CrossRef]

Yin, Z. G.

J. J. Dong, X. W. Zhang, Z. G. Yin, J. X. Wang, S. G. Zhang, F. T. Si, H. L. Gao, and X. Liu, “Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes,” Appl. Phys. Lett.100(17), 171109 (2012).
[CrossRef]

Zeng, H.

H. Zeng, G. Duan, Y. Li, S. Yang, X. Xu, and W. Cai, “Blue luminescence of ZnO nanoparticles based on non-equilibrium processes: defect origins and emission controls,” Adv. Funct. Mater.20(4), 561–572 (2010).
[CrossRef]

Zhang, J.

J. Zhang, Q. Zhang, T. Deng, and J. Wu, “Electrically driven ultraviolet lasing behavior from phosphorus-doped p-ZnO nanonail array/n-Si heterojunction,” Appl. Phys. Lett.95(21), 211107 (2009).
[CrossRef]

Z. Guo, D. Zhao, Y. Liu, D. Shen, J. Zhang, and B. Li, “Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n-Si heterojunction,” Appl. Phys. Lett.93(16), 163501 (2008).
[CrossRef]

Zhang, Q.

J. Zhang, Q. Zhang, T. Deng, and J. Wu, “Electrically driven ultraviolet lasing behavior from phosphorus-doped p-ZnO nanonail array/n-Si heterojunction,” Appl. Phys. Lett.95(21), 211107 (2009).
[CrossRef]

Zhang, S. G.

J. J. Dong, X. W. Zhang, Z. G. Yin, J. X. Wang, S. G. Zhang, F. T. Si, H. L. Gao, and X. Liu, “Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes,” Appl. Phys. Lett.100(17), 171109 (2012).
[CrossRef]

Zhang, X. W.

J. J. Dong, X. W. Zhang, Z. G. Yin, J. X. Wang, S. G. Zhang, F. T. Si, H. L. Gao, and X. Liu, “Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes,” Appl. Phys. Lett.100(17), 171109 (2012).
[CrossRef]

Zhao, D.

Z. Guo, D. Zhao, Y. Liu, D. Shen, J. Zhang, and B. Li, “Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n-Si heterojunction,” Appl. Phys. Lett.93(16), 163501 (2008).
[CrossRef]

Zhao, J. L.

S. T. Tan, X. W. Sun, J. L. Zhao, S. Iwan, Z. H. Cen, T. P. Chen, J. D. Ye, G. Q. Lo, D. L. Kwong, and K. L. Teo, “Ultraviolet and visible electroluminescence fromn-ZnO/SiOx/(n,p)-Si heterostructured light-emitting diodes,” Appl. Phys. Lett.93(1), 013506 (2008).
[CrossRef]

Zhao, Q. X.

P. Klason, T. M. Borseth, Q. X. Zhao, B. G. Svensson, A. Y. Kuznetsov, P. J. Bergman, and M. Willander, “Temperature dependence and decay times of zinc and oxygen vacancy related photoluminescence bands in zinc oxide,” Solid State Commun.145(5-6), 321–326 (2008).
[CrossRef]

Adv. Funct. Mater. (1)

H. Zeng, G. Duan, Y. Li, S. Yang, X. Xu, and W. Cai, “Blue luminescence of ZnO nanoparticles based on non-equilibrium processes: defect origins and emission controls,” Adv. Funct. Mater.20(4), 561–572 (2010).
[CrossRef]

Appl. Phys. Express (1)

E. Nannen, T. Kummell, A. Ebbers, and G. Bacher, “p-Si/n-ZnO nanocrystal heterojunction light emitting device,” Appl. Phys. Express5(3), 035001 (2012).
[CrossRef]

Appl. Phys. Lett. (8)

S. W. Lee, H. D. Cho, G. Panin, and T. W. Kang, “Vertical ZnO nanorod/Si contact light-emitting diode,” Appl. Phys. Lett.98(9), 093110 (2011).
[CrossRef]

L. T. Canham, “Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers,” Appl. Phys. Lett.57(10), 1046–1048 (1990).
[CrossRef]

J. J. Dong, X. W. Zhang, Z. G. Yin, J. X. Wang, S. G. Zhang, F. T. Si, H. L. Gao, and X. Liu, “Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes,” Appl. Phys. Lett.100(17), 171109 (2012).
[CrossRef]

J. Zhang, Q. Zhang, T. Deng, and J. Wu, “Electrically driven ultraviolet lasing behavior from phosphorus-doped p-ZnO nanonail array/n-Si heterojunction,” Appl. Phys. Lett.95(21), 211107 (2009).
[CrossRef]

Z. Guo, D. Zhao, Y. Liu, D. Shen, J. Zhang, and B. Li, “Visible and ultraviolet light alternative photodetector based on ZnO nanowire/n-Si heterojunction,” Appl. Phys. Lett.93(16), 163501 (2008).
[CrossRef]

L. Nilsson, O. Groening, C. Emmenegger, O. Kuettel, E. Schaller, L. Schlapbach, H. Kind, J.-M. Bonard, and K. Kern, “Scanning field emission from patterned carbon nanotube films,” Appl. Phys. Lett.76(15), 2071–2073 (2000).
[CrossRef]

H. P. Maruska, F. Namavar, and N. M. Kalkhoran, “Current injection mechanism for porous‐silicon transparent surface light‐emitting diodes,” Appl. Phys. Lett.61(11), 1338–1340 (1992).
[CrossRef]

S. T. Tan, X. W. Sun, J. L. Zhao, S. Iwan, Z. H. Cen, T. P. Chen, J. D. Ye, G. Q. Lo, D. L. Kwong, and K. L. Teo, “Ultraviolet and visible electroluminescence fromn-ZnO/SiOx/(n,p)-Si heterostructured light-emitting diodes,” Appl. Phys. Lett.93(1), 013506 (2008).
[CrossRef]

J. Appl. Phys. (4)

T. Toyama, H. Takeuchi, D. Yamaguchi, H. Kawasaki, K. Itatani, and H. Okamoto, “Solution-processed ZnO nanocrystals in thin-film light-emitting diodes for printed electronics,” J. Appl. Phys.108(8), 084302 (2010).
[CrossRef]

C. H. Ahn, Y. Y. Kim, D. C. Kim, S. K. Mohanta, and H. K. Cho, “A comparative analysis of deep level emission in ZnO layers deposited by various methods,” J. Appl. Phys.105(1), 013502 (2009).
[CrossRef]

Y. F. Chan, H. J. Xu, L. Cao, Y. Tang, D. Y. Li, and X. M. Sun, “ZnO/Si arrays decorated by Au nanoparticles for surface-enhanced Raman scattering study,” J. Appl. Phys.111(3), 033104 (2012).
[CrossRef]

A. E. Rakhshani, “Optoelectronic properties of p-n and p-i-n heterojunction devices prepared by electrodeposition of n-ZnO on p-Si,” J. Appl. Phys.108(9), 094502 (2010).
[CrossRef]

J. Mater. Res. (1)

H. J. Xu, L. Su, Y. F. Chan, and X. M. Sun, “Structural and multiband photoluminescent properties of a hierarchical ZnO/Si nanoheterostructure,” J. Mater. Res.26(09), 1174–1178 (2011).
[CrossRef]

J. Vac. Sci. Technol. B (1)

C. Periasamy and P. Chakrabarti, “Large-area and nanoscale n-ZnO/p-Si heterojunction photodetectors,” J. Vac. Sci. Technol. B29(5), 051206 (2011).
[CrossRef]

Nano Lett. (2)

Y. P. Hsieh, H. Y. Chen, M. Z. Lin, S. C. Shiu, M. Hofmann, M. Y. Chern, X. Jia, Y. J. Yang, H. J. Chang, H. M. Huang, S. C. Tseng, L. C. Chen, K. H. Chen, C. F. Lin, C. T. Liang, and Y. F. Chen, “Electroluminescence from ZnO/Si-nanotips light-emitting diodes,” Nano Lett.9(5), 1839–1843 (2009).
[CrossRef] [PubMed]

J. M. Caruge, J. E. Halpert, V. Bulović, and M. G. Bawendi, “NiO as an inorganic hole-transporting layer in quantum-dot light-emitting devices,” Nano Lett.6(12), 2991–2994 (2006).
[CrossRef] [PubMed]

Nanoscale Res. Lett. (1)

N. H. Alvi, K. Ul Hasan, O. Nur, and M. Willander, “The origin of the red emission in n-ZnO nanotubes/p-GaN white light emitting diodes,” Nanoscale Res. Lett.6(1), 130 (2011).
[CrossRef] [PubMed]

Nature (1)

Y. Wu, J. Xiang, C. Yang, W. Lu, and C. M. Lieber, “Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures,” Nature430(6995), 61–65 (2004).
[CrossRef] [PubMed]

New J. Phys. (1)

M. Willander, O. Nur, N. Bano, and K. Sultana, “Zinc oxide nanorod-based heterostructures on solid and soft substrates for white-light-emitting diode applications,” New J. Phys.11(12), 125020 (2009).
[CrossRef]

Opt. Express (1)

Phys. Rev. B (1)

P. O. Anikeeva, C. F. Madigan, J. E. Halpert, M. G. Bawendi, and V. Bulovic, “Electronic and excitonic processes in light-emitting devices based on organic materials and colloidal quantum dots,” Phys. Rev. B78(8), 085434 (2008).
[CrossRef]

Solid State Commun. (1)

P. Klason, T. M. Borseth, Q. X. Zhao, B. G. Svensson, A. Y. Kuznetsov, P. J. Bergman, and M. Willander, “Temperature dependence and decay times of zinc and oxygen vacancy related photoluminescence bands in zinc oxide,” Solid State Commun.145(5-6), 321–326 (2008).
[CrossRef]

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Figures (4)

Fig. 1
Fig. 1

Schematic diagrams showing the fabrication technique of ZnO-nanofilm/Si-micropillar LED array.

Fig. 2
Fig. 2

(a) XRD patterns of NSPA and ZnO/NSPA. FE-SEM images of (b) ZnO/NSPA, (c) local-amplified images of ZnO/NSPA and (d) the cross-sectional images of ZnO/NSPA. (e) TEM image of one single ZnO nanofilm/Si-micropillar heterostructure and (f) HRTEM image taken from the square region drawn in the middle of the ZnO nanofilm as shown in panel e, the inset in (f) the FFT pattern corresponding to the filed given in plane f.

Fig. 3
Fig. 3

J-V characteristic of ZnO-nanofilm/Si-micropillar heterostructure array. The inset (top) shows J-V characteristics of NSPA/Si, Ag/Si and Au/ZnO, respectively, and (bottom) shows the fitted J-V curve via the trap-charge-limited current model J Vm with m = 2.74 and the proportionality constant being 2.24.

Fig. 4
Fig. 4

(a) EL spectra of ZnO-nanofilm/Si-micropillar heterojunction array under forward bias at 5, 10, 15, and 20 V at room temperature. (b) Energy band diagram of ZnO-nanofilm/Si-micropillar heterojunction under zero bias. (c) Energy band diagram of three emission peaks at 411, 502 and 632 nm under forward bias.

Equations (2)

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J= J 0 { exp[ q( VI R s ) nKT ]1 }
n= q kT V ( lnJ )

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