Abstract

We report the design and characterization of external-cavity DBR lasers built with a III-V-semiconductor reflective-SOA with spot-size converter edge-coupled to SOI waveguides containing Bragg grating mirrors. The un-cooled lasers have wall-plug-efficiencies of up to 9.5% at powers of 6 mW. The lasers are suitable for making power efficient, hybrid WDM transmitters in a CMOS-compatible SOI optical platform.

© 2012 OSA

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2012 (1)

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photonic Tech. L. 24(1), 76–78 (2012).
[CrossRef]

2011 (4)

N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3µm silicon waveguide,” Opt. Express 19(8), 7062–7067 (2011).
[CrossRef]

H. Park, M. N. Sysak, H.-W. Chen, A. W. Fang, D. Liang, L. Liao, B. R. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. E. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. Sel. Top. Quant. 17(3), 671–688 (2011).
[CrossRef]

M. Asghari and A. V. Krishnamoorthy, “Silicon photonics: Energy-efficient communication,” Nat. Photonics 5(5), 268–270 (2011).
[CrossRef]

A. V. Krishnamoorthy, K. W. Goossen, W. Jan, X. Zheng, R. Ho, G. Li, R. Rozier, F. Liu, D. Patil, J. Lexau, H. Schwetman, D. Feng, M. Asghari, T. Pinguet, and J. E. Cunningham, “Progress in low-power switched optical interconnects,” IEEE J. Sel. Top. Quant. 17(2), 357–376 (2011).
[CrossRef]

2010 (1)

2009 (2)

A. V. Krishnamoorthy, Ron Ho, H. Xuezhe Zheng, Schwetman, P. Jon Lexau, Koka, I. GuoLiang Li, Shubin, and J. E. Cunningham, “Computer systems based on silicon photonic interconnects,” Proc. IEEE 97(7), 1337–1361 (2009).
[CrossRef]

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[CrossRef]

2008 (1)

A. W. Fang, B. R. Koch, R. Jones, E. Lively, Di Liang, Ying-Hao Kuo, and J. E. Bowers “A distributed Bragg reflector silicon evanescent laser,” IEEE Photonic Tech. L. 20(20), 1667–1669 (2008).
[CrossRef]

2007 (2)

M. N. Sysak, H. Park, A. W. Fang, J. E. Bowers, R. Jones, O. Cohen, O. Raday, and M. J. Paniccia, “Experimental and theoretical thermal analysis of a hybrid silicon evanescent laser,” Opt. Express 15(23), 15041–15046 (2007).
[CrossRef] [PubMed]

J.-U. Shin, S. H. Oh, Y.-J. Park, S.-H. Park, Y.-T. Han, H. Sung, and K. R. Oh, “External cavity lasers composed of higher order gratings and SLDs integrated on PLC platform,” ETRI J. 29(4), 452–456 (2007).
[CrossRef]

2006 (2)

R. A. Soref, “The past, present, and future of silicon photonics,” IEEE J. Sel. Top. Quant. 12(6), 1678–1687 (2006).
[CrossRef]

B. Jalali and S. Fathpour, “Silicon photonics,” J. Lightwave Technol. 24(12), 4600–4615 (2006).
[CrossRef]

1998 (1)

K. Kallimani and M. J. O’Mahony, “Calculation of optical power emitted from a fiber grating laser,” IEE Proc., Optoelectron. 145(6), 319–324 (1998).
[CrossRef]

1996 (1)

T. Tanaka, H. Takahashi, M. Oguma, T. Hashimoto, Y. Hibino, Y. Yamada, Y. Itaya, J. Albert, and K. O. Hill, “Integrated external cavity laser composed of spot-size converted LD and UV written grating in silica waveguide on Si,” Electron. Lett. 32(13), 1202–1203 (1996).
[CrossRef]

1994 (1)

G. D. Maxwell, R. Kashyap, G. Sherlock, J. V. Collins, and B. J. Ainslie, “Demonstration of a semiconductor external cavity laser using a UV written grating in a planar silica waveguide,” Electron. Lett. 30(18), 1486–1487 (1994).
[CrossRef]

1975 (1)

W. Streifer, D. R. Scifres, and R. Burnham, “Coupling coefficients for distributed feedback single- and double-heterostructure diode lasers,” IEEE J. Quantum Electron. 11(11), 867–873 (1975).
[CrossRef]

Ainslie, B. J.

G. D. Maxwell, R. Kashyap, G. Sherlock, J. V. Collins, and B. J. Ainslie, “Demonstration of a semiconductor external cavity laser using a UV written grating in a planar silica waveguide,” Electron. Lett. 30(18), 1486–1487 (1994).
[CrossRef]

Albert, J.

T. Tanaka, H. Takahashi, M. Oguma, T. Hashimoto, Y. Hibino, Y. Yamada, Y. Itaya, J. Albert, and K. O. Hill, “Integrated external cavity laser composed of spot-size converted LD and UV written grating in silica waveguide on Si,” Electron. Lett. 32(13), 1202–1203 (1996).
[CrossRef]

Asghari, M.

A. V. Krishnamoorthy, K. W. Goossen, W. Jan, X. Zheng, R. Ho, G. Li, R. Rozier, F. Liu, D. Patil, J. Lexau, H. Schwetman, D. Feng, M. Asghari, T. Pinguet, and J. E. Cunningham, “Progress in low-power switched optical interconnects,” IEEE J. Sel. Top. Quant. 17(2), 357–376 (2011).
[CrossRef]

M. Asghari and A. V. Krishnamoorthy, “Silicon photonics: Energy-efficient communication,” Nat. Photonics 5(5), 268–270 (2011).
[CrossRef]

N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3µm silicon waveguide,” Opt. Express 19(8), 7062–7067 (2011).
[CrossRef]

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[CrossRef]

Bovington, J.

H. Park, M. N. Sysak, H.-W. Chen, A. W. Fang, D. Liang, L. Liao, B. R. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. E. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. Sel. Top. Quant. 17(3), 671–688 (2011).
[CrossRef]

Bowers, J. E.

H. Park, M. N. Sysak, H.-W. Chen, A. W. Fang, D. Liang, L. Liao, B. R. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. E. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. Sel. Top. Quant. 17(3), 671–688 (2011).
[CrossRef]

A. W. Fang, B. R. Koch, R. Jones, E. Lively, Di Liang, Ying-Hao Kuo, and J. E. Bowers “A distributed Bragg reflector silicon evanescent laser,” IEEE Photonic Tech. L. 20(20), 1667–1669 (2008).
[CrossRef]

M. N. Sysak, H. Park, A. W. Fang, J. E. Bowers, R. Jones, O. Cohen, O. Raday, and M. J. Paniccia, “Experimental and theoretical thermal analysis of a hybrid silicon evanescent laser,” Opt. Express 15(23), 15041–15046 (2007).
[CrossRef] [PubMed]

Burnham, R.

W. Streifer, D. R. Scifres, and R. Burnham, “Coupling coefficients for distributed feedback single- and double-heterostructure diode lasers,” IEEE J. Quantum Electron. 11(11), 867–873 (1975).
[CrossRef]

Chen, H.-W.

H. Park, M. N. Sysak, H.-W. Chen, A. W. Fang, D. Liang, L. Liao, B. R. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. E. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. Sel. Top. Quant. 17(3), 671–688 (2011).
[CrossRef]

Chu, T.

Cohen, O.

Collins, J. V.

G. D. Maxwell, R. Kashyap, G. Sherlock, J. V. Collins, and B. J. Ainslie, “Demonstration of a semiconductor external cavity laser using a UV written grating in a planar silica waveguide,” Electron. Lett. 30(18), 1486–1487 (1994).
[CrossRef]

Cunningham, J. E.

A. V. Krishnamoorthy, K. W. Goossen, W. Jan, X. Zheng, R. Ho, G. Li, R. Rozier, F. Liu, D. Patil, J. Lexau, H. Schwetman, D. Feng, M. Asghari, T. Pinguet, and J. E. Cunningham, “Progress in low-power switched optical interconnects,” IEEE J. Sel. Top. Quant. 17(2), 357–376 (2011).
[CrossRef]

N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3µm silicon waveguide,” Opt. Express 19(8), 7062–7067 (2011).
[CrossRef]

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[CrossRef]

A. V. Krishnamoorthy, Ron Ho, H. Xuezhe Zheng, Schwetman, P. Jon Lexau, Koka, I. GuoLiang Li, Shubin, and J. E. Cunningham, “Computer systems based on silicon photonic interconnects,” Proc. IEEE 97(7), 1337–1361 (2009).
[CrossRef]

de Valicourt, G.

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photonic Tech. L. 24(1), 76–78 (2012).
[CrossRef]

Di Liang,

A. W. Fang, B. R. Koch, R. Jones, E. Lively, Di Liang, Ying-Hao Kuo, and J. E. Bowers “A distributed Bragg reflector silicon evanescent laser,” IEEE Photonic Tech. L. 20(20), 1667–1669 (2008).
[CrossRef]

Dong, P.

N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3µm silicon waveguide,” Opt. Express 19(8), 7062–7067 (2011).
[CrossRef]

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[CrossRef]

Duan, G. H.

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photonic Tech. L. 24(1), 76–78 (2012).
[CrossRef]

Fang, A. W.

H. Park, M. N. Sysak, H.-W. Chen, A. W. Fang, D. Liang, L. Liao, B. R. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. E. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. Sel. Top. Quant. 17(3), 671–688 (2011).
[CrossRef]

A. W. Fang, B. R. Koch, R. Jones, E. Lively, Di Liang, Ying-Hao Kuo, and J. E. Bowers “A distributed Bragg reflector silicon evanescent laser,” IEEE Photonic Tech. L. 20(20), 1667–1669 (2008).
[CrossRef]

M. N. Sysak, H. Park, A. W. Fang, J. E. Bowers, R. Jones, O. Cohen, O. Raday, and M. J. Paniccia, “Experimental and theoretical thermal analysis of a hybrid silicon evanescent laser,” Opt. Express 15(23), 15041–15046 (2007).
[CrossRef] [PubMed]

Fathpour, S.

Fedeli, J.-M.

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photonic Tech. L. 24(1), 76–78 (2012).
[CrossRef]

Feng, D.

N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3µm silicon waveguide,” Opt. Express 19(8), 7062–7067 (2011).
[CrossRef]

A. V. Krishnamoorthy, K. W. Goossen, W. Jan, X. Zheng, R. Ho, G. Li, R. Rozier, F. Liu, D. Patil, J. Lexau, H. Schwetman, D. Feng, M. Asghari, T. Pinguet, and J. E. Cunningham, “Progress in low-power switched optical interconnects,” IEEE J. Sel. Top. Quant. 17(2), 357–376 (2011).
[CrossRef]

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[CrossRef]

Feng, N.-N.

N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3µm silicon waveguide,” Opt. Express 19(8), 7062–7067 (2011).
[CrossRef]

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[CrossRef]

Fong, J.

N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3µm silicon waveguide,” Opt. Express 19(8), 7062–7067 (2011).
[CrossRef]

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[CrossRef]

Fujioka, N.

Goossen, K. W.

A. V. Krishnamoorthy, K. W. Goossen, W. Jan, X. Zheng, R. Ho, G. Li, R. Rozier, F. Liu, D. Patil, J. Lexau, H. Schwetman, D. Feng, M. Asghari, T. Pinguet, and J. E. Cunningham, “Progress in low-power switched optical interconnects,” IEEE J. Sel. Top. Quant. 17(2), 357–376 (2011).
[CrossRef]

GuoLiang Li, I.

A. V. Krishnamoorthy, Ron Ho, H. Xuezhe Zheng, Schwetman, P. Jon Lexau, Koka, I. GuoLiang Li, Shubin, and J. E. Cunningham, “Computer systems based on silicon photonic interconnects,” Proc. IEEE 97(7), 1337–1361 (2009).
[CrossRef]

Han, Y.-T.

J.-U. Shin, S. H. Oh, Y.-J. Park, S.-H. Park, Y.-T. Han, H. Sung, and K. R. Oh, “External cavity lasers composed of higher order gratings and SLDs integrated on PLC platform,” ETRI J. 29(4), 452–456 (2007).
[CrossRef]

Hashimoto, T.

T. Tanaka, H. Takahashi, M. Oguma, T. Hashimoto, Y. Hibino, Y. Yamada, Y. Itaya, J. Albert, and K. O. Hill, “Integrated external cavity laser composed of spot-size converted LD and UV written grating in silica waveguide on Si,” Electron. Lett. 32(13), 1202–1203 (1996).
[CrossRef]

Hibino, Y.

T. Tanaka, H. Takahashi, M. Oguma, T. Hashimoto, Y. Hibino, Y. Yamada, Y. Itaya, J. Albert, and K. O. Hill, “Integrated external cavity laser composed of spot-size converted LD and UV written grating in silica waveguide on Si,” Electron. Lett. 32(13), 1202–1203 (1996).
[CrossRef]

Hill, K. O.

T. Tanaka, H. Takahashi, M. Oguma, T. Hashimoto, Y. Hibino, Y. Yamada, Y. Itaya, J. Albert, and K. O. Hill, “Integrated external cavity laser composed of spot-size converted LD and UV written grating in silica waveguide on Si,” Electron. Lett. 32(13), 1202–1203 (1996).
[CrossRef]

Ho, R.

A. V. Krishnamoorthy, K. W. Goossen, W. Jan, X. Zheng, R. Ho, G. Li, R. Rozier, F. Liu, D. Patil, J. Lexau, H. Schwetman, D. Feng, M. Asghari, T. Pinguet, and J. E. Cunningham, “Progress in low-power switched optical interconnects,” IEEE J. Sel. Top. Quant. 17(2), 357–376 (2011).
[CrossRef]

Ishizaka, M.

Itaya, Y.

T. Tanaka, H. Takahashi, M. Oguma, T. Hashimoto, Y. Hibino, Y. Yamada, Y. Itaya, J. Albert, and K. O. Hill, “Integrated external cavity laser composed of spot-size converted LD and UV written grating in silica waveguide on Si,” Electron. Lett. 32(13), 1202–1203 (1996).
[CrossRef]

Jacob-Mitos, M.

H. Park, M. N. Sysak, H.-W. Chen, A. W. Fang, D. Liang, L. Liao, B. R. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. E. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. Sel. Top. Quant. 17(3), 671–688 (2011).
[CrossRef]

Jalali, B.

Jan, W.

A. V. Krishnamoorthy, K. W. Goossen, W. Jan, X. Zheng, R. Ho, G. Li, R. Rozier, F. Liu, D. Patil, J. Lexau, H. Schwetman, D. Feng, M. Asghari, T. Pinguet, and J. E. Cunningham, “Progress in low-power switched optical interconnects,” IEEE J. Sel. Top. Quant. 17(2), 357–376 (2011).
[CrossRef]

Jany, C.

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photonic Tech. L. 24(1), 76–78 (2012).
[CrossRef]

Jon Lexau, P.

A. V. Krishnamoorthy, Ron Ho, H. Xuezhe Zheng, Schwetman, P. Jon Lexau, Koka, I. GuoLiang Li, Shubin, and J. E. Cunningham, “Computer systems based on silicon photonic interconnects,” Proc. IEEE 97(7), 1337–1361 (2009).
[CrossRef]

Jones, R.

H. Park, M. N. Sysak, H.-W. Chen, A. W. Fang, D. Liang, L. Liao, B. R. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. E. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. Sel. Top. Quant. 17(3), 671–688 (2011).
[CrossRef]

A. W. Fang, B. R. Koch, R. Jones, E. Lively, Di Liang, Ying-Hao Kuo, and J. E. Bowers “A distributed Bragg reflector silicon evanescent laser,” IEEE Photonic Tech. L. 20(20), 1667–1669 (2008).
[CrossRef]

M. N. Sysak, H. Park, A. W. Fang, J. E. Bowers, R. Jones, O. Cohen, O. Raday, and M. J. Paniccia, “Experimental and theoretical thermal analysis of a hybrid silicon evanescent laser,” Opt. Express 15(23), 15041–15046 (2007).
[CrossRef] [PubMed]

Kallimani, K.

K. Kallimani and M. J. O’Mahony, “Calculation of optical power emitted from a fiber grating laser,” IEE Proc., Optoelectron. 145(6), 319–324 (1998).
[CrossRef]

Kashyap, R.

G. D. Maxwell, R. Kashyap, G. Sherlock, J. V. Collins, and B. J. Ainslie, “Demonstration of a semiconductor external cavity laser using a UV written grating in a planar silica waveguide,” Electron. Lett. 30(18), 1486–1487 (1994).
[CrossRef]

Keyvaninia, S.

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photonic Tech. L. 24(1), 76–78 (2012).
[CrossRef]

Koch, B. R.

H. Park, M. N. Sysak, H.-W. Chen, A. W. Fang, D. Liang, L. Liao, B. R. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. E. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. Sel. Top. Quant. 17(3), 671–688 (2011).
[CrossRef]

A. W. Fang, B. R. Koch, R. Jones, E. Lively, Di Liang, Ying-Hao Kuo, and J. E. Bowers “A distributed Bragg reflector silicon evanescent laser,” IEEE Photonic Tech. L. 20(20), 1667–1669 (2008).
[CrossRef]

Koka,

A. V. Krishnamoorthy, Ron Ho, H. Xuezhe Zheng, Schwetman, P. Jon Lexau, Koka, I. GuoLiang Li, Shubin, and J. E. Cunningham, “Computer systems based on silicon photonic interconnects,” Proc. IEEE 97(7), 1337–1361 (2009).
[CrossRef]

Krishnamoorthy, A. V.

M. Asghari and A. V. Krishnamoorthy, “Silicon photonics: Energy-efficient communication,” Nat. Photonics 5(5), 268–270 (2011).
[CrossRef]

A. V. Krishnamoorthy, K. W. Goossen, W. Jan, X. Zheng, R. Ho, G. Li, R. Rozier, F. Liu, D. Patil, J. Lexau, H. Schwetman, D. Feng, M. Asghari, T. Pinguet, and J. E. Cunningham, “Progress in low-power switched optical interconnects,” IEEE J. Sel. Top. Quant. 17(2), 357–376 (2011).
[CrossRef]

N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3µm silicon waveguide,” Opt. Express 19(8), 7062–7067 (2011).
[CrossRef]

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[CrossRef]

A. V. Krishnamoorthy, Ron Ho, H. Xuezhe Zheng, Schwetman, P. Jon Lexau, Koka, I. GuoLiang Li, Shubin, and J. E. Cunningham, “Computer systems based on silicon photonic interconnects,” Proc. IEEE 97(7), 1337–1361 (2009).
[CrossRef]

Kung, C.-C.

N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3µm silicon waveguide,” Opt. Express 19(8), 7062–7067 (2011).
[CrossRef]

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[CrossRef]

Lamponi, M.

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photonic Tech. L. 24(1), 76–78 (2012).
[CrossRef]

Lelarge, F.

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photonic Tech. L. 24(1), 76–78 (2012).
[CrossRef]

Lexau, J.

A. V. Krishnamoorthy, K. W. Goossen, W. Jan, X. Zheng, R. Ho, G. Li, R. Rozier, F. Liu, D. Patil, J. Lexau, H. Schwetman, D. Feng, M. Asghari, T. Pinguet, and J. E. Cunningham, “Progress in low-power switched optical interconnects,” IEEE J. Sel. Top. Quant. 17(2), 357–376 (2011).
[CrossRef]

Li, G.

A. V. Krishnamoorthy, K. W. Goossen, W. Jan, X. Zheng, R. Ho, G. Li, R. Rozier, F. Liu, D. Patil, J. Lexau, H. Schwetman, D. Feng, M. Asghari, T. Pinguet, and J. E. Cunningham, “Progress in low-power switched optical interconnects,” IEEE J. Sel. Top. Quant. 17(2), 357–376 (2011).
[CrossRef]

Liang, D.

H. Park, M. N. Sysak, H.-W. Chen, A. W. Fang, D. Liang, L. Liao, B. R. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. E. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. Sel. Top. Quant. 17(3), 671–688 (2011).
[CrossRef]

Liang, H.

N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3µm silicon waveguide,” Opt. Express 19(8), 7062–7067 (2011).
[CrossRef]

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[CrossRef]

Liao, L.

H. Park, M. N. Sysak, H.-W. Chen, A. W. Fang, D. Liang, L. Liao, B. R. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. E. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. Sel. Top. Quant. 17(3), 671–688 (2011).
[CrossRef]

Liao, S.

N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3µm silicon waveguide,” Opt. Express 19(8), 7062–7067 (2011).
[CrossRef]

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[CrossRef]

Liu, F.

A. V. Krishnamoorthy, K. W. Goossen, W. Jan, X. Zheng, R. Ho, G. Li, R. Rozier, F. Liu, D. Patil, J. Lexau, H. Schwetman, D. Feng, M. Asghari, T. Pinguet, and J. E. Cunningham, “Progress in low-power switched optical interconnects,” IEEE J. Sel. Top. Quant. 17(2), 357–376 (2011).
[CrossRef]

Lively, E.

A. W. Fang, B. R. Koch, R. Jones, E. Lively, Di Liang, Ying-Hao Kuo, and J. E. Bowers “A distributed Bragg reflector silicon evanescent laser,” IEEE Photonic Tech. L. 20(20), 1667–1669 (2008).
[CrossRef]

Luo, Y.

Maxwell, G. D.

G. D. Maxwell, R. Kashyap, G. Sherlock, J. V. Collins, and B. J. Ainslie, “Demonstration of a semiconductor external cavity laser using a UV written grating in a planar silica waveguide,” Electron. Lett. 30(18), 1486–1487 (1994).
[CrossRef]

Messaoudene, S.

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photonic Tech. L. 24(1), 76–78 (2012).
[CrossRef]

O’Mahony, M. J.

K. Kallimani and M. J. O’Mahony, “Calculation of optical power emitted from a fiber grating laser,” IEE Proc., Optoelectron. 145(6), 319–324 (1998).
[CrossRef]

Oguma, M.

T. Tanaka, H. Takahashi, M. Oguma, T. Hashimoto, Y. Hibino, Y. Yamada, Y. Itaya, J. Albert, and K. O. Hill, “Integrated external cavity laser composed of spot-size converted LD and UV written grating in silica waveguide on Si,” Electron. Lett. 32(13), 1202–1203 (1996).
[CrossRef]

Oh, K. R.

J.-U. Shin, S. H. Oh, Y.-J. Park, S.-H. Park, Y.-T. Han, H. Sung, and K. R. Oh, “External cavity lasers composed of higher order gratings and SLDs integrated on PLC platform,” ETRI J. 29(4), 452–456 (2007).
[CrossRef]

Oh, S. H.

J.-U. Shin, S. H. Oh, Y.-J. Park, S.-H. Park, Y.-T. Han, H. Sung, and K. R. Oh, “External cavity lasers composed of higher order gratings and SLDs integrated on PLC platform,” ETRI J. 29(4), 452–456 (2007).
[CrossRef]

Paniccia, M. J.

Park, H.

H. Park, M. N. Sysak, H.-W. Chen, A. W. Fang, D. Liang, L. Liao, B. R. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. E. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. Sel. Top. Quant. 17(3), 671–688 (2011).
[CrossRef]

M. N. Sysak, H. Park, A. W. Fang, J. E. Bowers, R. Jones, O. Cohen, O. Raday, and M. J. Paniccia, “Experimental and theoretical thermal analysis of a hybrid silicon evanescent laser,” Opt. Express 15(23), 15041–15046 (2007).
[CrossRef] [PubMed]

Park, S.-H.

J.-U. Shin, S. H. Oh, Y.-J. Park, S.-H. Park, Y.-T. Han, H. Sung, and K. R. Oh, “External cavity lasers composed of higher order gratings and SLDs integrated on PLC platform,” ETRI J. 29(4), 452–456 (2007).
[CrossRef]

Park, Y.-J.

J.-U. Shin, S. H. Oh, Y.-J. Park, S.-H. Park, Y.-T. Han, H. Sung, and K. R. Oh, “External cavity lasers composed of higher order gratings and SLDs integrated on PLC platform,” ETRI J. 29(4), 452–456 (2007).
[CrossRef]

Patil, D.

A. V. Krishnamoorthy, K. W. Goossen, W. Jan, X. Zheng, R. Ho, G. Li, R. Rozier, F. Liu, D. Patil, J. Lexau, H. Schwetman, D. Feng, M. Asghari, T. Pinguet, and J. E. Cunningham, “Progress in low-power switched optical interconnects,” IEEE J. Sel. Top. Quant. 17(2), 357–376 (2011).
[CrossRef]

Pinguet, T.

A. V. Krishnamoorthy, K. W. Goossen, W. Jan, X. Zheng, R. Ho, G. Li, R. Rozier, F. Liu, D. Patil, J. Lexau, H. Schwetman, D. Feng, M. Asghari, T. Pinguet, and J. E. Cunningham, “Progress in low-power switched optical interconnects,” IEEE J. Sel. Top. Quant. 17(2), 357–376 (2011).
[CrossRef]

Poingt, F.

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photonic Tech. L. 24(1), 76–78 (2012).
[CrossRef]

Qian, W.

Raday, O.

Roelkens, G.

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photonic Tech. L. 24(1), 76–78 (2012).
[CrossRef]

Ron Ho,

A. V. Krishnamoorthy, Ron Ho, H. Xuezhe Zheng, Schwetman, P. Jon Lexau, Koka, I. GuoLiang Li, Shubin, and J. E. Cunningham, “Computer systems based on silicon photonic interconnects,” Proc. IEEE 97(7), 1337–1361 (2009).
[CrossRef]

Rozier, R.

A. V. Krishnamoorthy, K. W. Goossen, W. Jan, X. Zheng, R. Ho, G. Li, R. Rozier, F. Liu, D. Patil, J. Lexau, H. Schwetman, D. Feng, M. Asghari, T. Pinguet, and J. E. Cunningham, “Progress in low-power switched optical interconnects,” IEEE J. Sel. Top. Quant. 17(2), 357–376 (2011).
[CrossRef]

Schwetman,

A. V. Krishnamoorthy, Ron Ho, H. Xuezhe Zheng, Schwetman, P. Jon Lexau, Koka, I. GuoLiang Li, Shubin, and J. E. Cunningham, “Computer systems based on silicon photonic interconnects,” Proc. IEEE 97(7), 1337–1361 (2009).
[CrossRef]

Schwetman, H.

A. V. Krishnamoorthy, K. W. Goossen, W. Jan, X. Zheng, R. Ho, G. Li, R. Rozier, F. Liu, D. Patil, J. Lexau, H. Schwetman, D. Feng, M. Asghari, T. Pinguet, and J. E. Cunningham, “Progress in low-power switched optical interconnects,” IEEE J. Sel. Top. Quant. 17(2), 357–376 (2011).
[CrossRef]

Scifres, D. R.

W. Streifer, D. R. Scifres, and R. Burnham, “Coupling coefficients for distributed feedback single- and double-heterostructure diode lasers,” IEEE J. Quantum Electron. 11(11), 867–873 (1975).
[CrossRef]

Shafiiha, R.

N.-N. Feng, D. Feng, S. Liao, X. Wang, P. Dong, H. Liang, C.-C. Kung, W. Qian, J. Fong, R. Shafiiha, Y. Luo, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “30GHz Ge electro-absorption modulator integrated with 3µm silicon waveguide,” Opt. Express 19(8), 7062–7067 (2011).
[CrossRef]

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[CrossRef]

Sherlock, G.

G. D. Maxwell, R. Kashyap, G. Sherlock, J. V. Collins, and B. J. Ainslie, “Demonstration of a semiconductor external cavity laser using a UV written grating in a planar silica waveguide,” Electron. Lett. 30(18), 1486–1487 (1994).
[CrossRef]

Shin, J.-U.

J.-U. Shin, S. H. Oh, Y.-J. Park, S.-H. Park, Y.-T. Han, H. Sung, and K. R. Oh, “External cavity lasers composed of higher order gratings and SLDs integrated on PLC platform,” ETRI J. 29(4), 452–456 (2007).
[CrossRef]

Shubin,

A. V. Krishnamoorthy, Ron Ho, H. Xuezhe Zheng, Schwetman, P. Jon Lexau, Koka, I. GuoLiang Li, Shubin, and J. E. Cunningham, “Computer systems based on silicon photonic interconnects,” Proc. IEEE 97(7), 1337–1361 (2009).
[CrossRef]

Soref, R. A.

R. A. Soref, “The past, present, and future of silicon photonics,” IEEE J. Sel. Top. Quant. 12(6), 1678–1687 (2006).
[CrossRef]

Streifer, W.

W. Streifer, D. R. Scifres, and R. Burnham, “Coupling coefficients for distributed feedback single- and double-heterostructure diode lasers,” IEEE J. Quantum Electron. 11(11), 867–873 (1975).
[CrossRef]

Sung, H.

J.-U. Shin, S. H. Oh, Y.-J. Park, S.-H. Park, Y.-T. Han, H. Sung, and K. R. Oh, “External cavity lasers composed of higher order gratings and SLDs integrated on PLC platform,” ETRI J. 29(4), 452–456 (2007).
[CrossRef]

Sysak, M. N.

H. Park, M. N. Sysak, H.-W. Chen, A. W. Fang, D. Liang, L. Liao, B. R. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. E. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. Sel. Top. Quant. 17(3), 671–688 (2011).
[CrossRef]

M. N. Sysak, H. Park, A. W. Fang, J. E. Bowers, R. Jones, O. Cohen, O. Raday, and M. J. Paniccia, “Experimental and theoretical thermal analysis of a hybrid silicon evanescent laser,” Opt. Express 15(23), 15041–15046 (2007).
[CrossRef] [PubMed]

Takahashi, H.

T. Tanaka, H. Takahashi, M. Oguma, T. Hashimoto, Y. Hibino, Y. Yamada, Y. Itaya, J. Albert, and K. O. Hill, “Integrated external cavity laser composed of spot-size converted LD and UV written grating in silica waveguide on Si,” Electron. Lett. 32(13), 1202–1203 (1996).
[CrossRef]

Tanaka, T.

T. Tanaka, H. Takahashi, M. Oguma, T. Hashimoto, Y. Hibino, Y. Yamada, Y. Itaya, J. Albert, and K. O. Hill, “Integrated external cavity laser composed of spot-size converted LD and UV written grating in silica waveguide on Si,” Electron. Lett. 32(13), 1202–1203 (1996).
[CrossRef]

Tang, Y.

H. Park, M. N. Sysak, H.-W. Chen, A. W. Fang, D. Liang, L. Liao, B. R. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. E. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. Sel. Top. Quant. 17(3), 671–688 (2011).
[CrossRef]

Van Thourhout, D.

M. Lamponi, S. Keyvaninia, C. Jany, F. Poingt, F. Lelarge, G. de Valicourt, G. Roelkens, D. Van Thourhout, S. Messaoudene, J.-M. Fedeli, and G. H. Duan, “Low-threshold heterogeneously integrated InP/SOI lasers with a double adiabatic taper coupler,” IEEE Photonic Tech. L. 24(1), 76–78 (2012).
[CrossRef]

Wang, X.

Wong, K.

H. Park, M. N. Sysak, H.-W. Chen, A. W. Fang, D. Liang, L. Liao, B. R. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. E. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. Sel. Top. Quant. 17(3), 671–688 (2011).
[CrossRef]

Xuezhe Zheng, H.

A. V. Krishnamoorthy, Ron Ho, H. Xuezhe Zheng, Schwetman, P. Jon Lexau, Koka, I. GuoLiang Li, Shubin, and J. E. Cunningham, “Computer systems based on silicon photonic interconnects,” Proc. IEEE 97(7), 1337–1361 (2009).
[CrossRef]

Yamada, Y.

T. Tanaka, H. Takahashi, M. Oguma, T. Hashimoto, Y. Hibino, Y. Yamada, Y. Itaya, J. Albert, and K. O. Hill, “Integrated external cavity laser composed of spot-size converted LD and UV written grating in silica waveguide on Si,” Electron. Lett. 32(13), 1202–1203 (1996).
[CrossRef]

Ying-Hao Kuo,

A. W. Fang, B. R. Koch, R. Jones, E. Lively, Di Liang, Ying-Hao Kuo, and J. E. Bowers “A distributed Bragg reflector silicon evanescent laser,” IEEE Photonic Tech. L. 20(20), 1667–1669 (2008).
[CrossRef]

Zheng, D.

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[CrossRef]

Zheng, X.

A. V. Krishnamoorthy, K. W. Goossen, W. Jan, X. Zheng, R. Ho, G. Li, R. Rozier, F. Liu, D. Patil, J. Lexau, H. Schwetman, D. Feng, M. Asghari, T. Pinguet, and J. E. Cunningham, “Progress in low-power switched optical interconnects,” IEEE J. Sel. Top. Quant. 17(2), 357–376 (2011).
[CrossRef]

Appl. Phys. Lett. (1)

D. Feng, S. Liao, P. Dong, N.-N. Feng, H. Liang, D. Zheng, C.-C. Kung, J. Fong, R. Shafiiha, J. E. Cunningham, A. V. Krishnamoorthy, and M. Asghari, “High-speed Ge photodetector monolithically integrated with large cross-section silicon-on-insulator waveguide,” Appl. Phys. Lett. 95(26), 261105 (2009).
[CrossRef]

Electron. Lett. (2)

G. D. Maxwell, R. Kashyap, G. Sherlock, J. V. Collins, and B. J. Ainslie, “Demonstration of a semiconductor external cavity laser using a UV written grating in a planar silica waveguide,” Electron. Lett. 30(18), 1486–1487 (1994).
[CrossRef]

T. Tanaka, H. Takahashi, M. Oguma, T. Hashimoto, Y. Hibino, Y. Yamada, Y. Itaya, J. Albert, and K. O. Hill, “Integrated external cavity laser composed of spot-size converted LD and UV written grating in silica waveguide on Si,” Electron. Lett. 32(13), 1202–1203 (1996).
[CrossRef]

ETRI J. (1)

J.-U. Shin, S. H. Oh, Y.-J. Park, S.-H. Park, Y.-T. Han, H. Sung, and K. R. Oh, “External cavity lasers composed of higher order gratings and SLDs integrated on PLC platform,” ETRI J. 29(4), 452–456 (2007).
[CrossRef]

IEE Proc., Optoelectron. (1)

K. Kallimani and M. J. O’Mahony, “Calculation of optical power emitted from a fiber grating laser,” IEE Proc., Optoelectron. 145(6), 319–324 (1998).
[CrossRef]

IEEE J. Quantum Electron. (1)

W. Streifer, D. R. Scifres, and R. Burnham, “Coupling coefficients for distributed feedback single- and double-heterostructure diode lasers,” IEEE J. Quantum Electron. 11(11), 867–873 (1975).
[CrossRef]

IEEE J. Sel. Top. Quant. (3)

H. Park, M. N. Sysak, H.-W. Chen, A. W. Fang, D. Liang, L. Liao, B. R. Koch, J. Bovington, Y. Tang, K. Wong, M. Jacob-Mitos, R. Jones, and J. E. Bowers, “Device and integration technology for silicon photonic transmitters,” IEEE J. Sel. Top. Quant. 17(3), 671–688 (2011).
[CrossRef]

R. A. Soref, “The past, present, and future of silicon photonics,” IEEE J. Sel. Top. Quant. 12(6), 1678–1687 (2006).
[CrossRef]

A. V. Krishnamoorthy, K. W. Goossen, W. Jan, X. Zheng, R. Ho, G. Li, R. Rozier, F. Liu, D. Patil, J. Lexau, H. Schwetman, D. Feng, M. Asghari, T. Pinguet, and J. E. Cunningham, “Progress in low-power switched optical interconnects,” IEEE J. Sel. Top. Quant. 17(2), 357–376 (2011).
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A. W. Fang, B. R. Koch, R. Jones, E. Lively, Di Liang, Ying-Hao Kuo, and J. E. Bowers “A distributed Bragg reflector silicon evanescent laser,” IEEE Photonic Tech. L. 20(20), 1667–1669 (2008).
[CrossRef]

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[CrossRef]

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B. Ben Bakir, A. Descos, N. Olivier, D. Bordel, P. Grosse, J. L. Gentner, F. Lelarge, and J.-M. Fédéli, “Hybrid Si/III-V lasers with adiabatic coupling,” in Proceedings of IEEE 8th International Conference on Group IV Photonics (IEEE, 2011), pp. 169–171.

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Figures (5)

Fig. 1
Fig. 1

Schematic of the cross section (a) and side view (b) of the gratings formed in the SOI ridge waveguide.

Fig. 2
Fig. 2

Bragg grating reflectance spectra for different grating lengths, (a) Grating A, L = 0.7 mm, (b) Grating B, L = 1 mm, and (c) Grating C, L = 1.5 mm. Solid lines: measured; dashed lines: simulated.

Fig. 3
Fig. 3

(a) Side-view schematic of experimental setup (not to scale); (b) top-view photograph of experimental setup showing the RSOA gain chip edge-coupled and actively aligned to the SOI passive chip; (c) SEM picture of the grating in the SOI waveguide.

Fig. 4
Fig. 4

(a) LIV curves for lasers made with grating A (blue curves), B (green curves), and C (red curves), and (b) wall plug efficiency versus bias current for the laser made with grating A. Solid lines show the measured curves, dashed lines show fits using the model based on Eq. (3), and the dotted line shows the diode voltage.

Fig. 5
Fig. 5

Lasing spectra versus bias current for laser made with grating A. (a) Lasing spectra collected with OSA at 95 mA (black solid line) and 100 mA (blue dotted line) overlaid with the grating spectrum (green dashed line). Inset: Zoom-out of laser spectrum at 95 mA showing single-mode lasing over 8 nm. (b) contour plot of normalised lasing spectra versus bias current and wavelength, (c) LI curve with bias current range matched to the y-axis of (b).

Equations (5)

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R= | κ | 2 sin h 2 sL s 2 cos h 2 sL+ (Δβ/2) 2 sin h 2 sL ,
κ= π λ 0 n ¯ eff Waveguide ( n 1 2 n 2 2 ) E 2 dxdy + E 2 dxdy .
P out = η ext η( 1 R eff η 2 ) R r ( 1 R eff ) R r +( 1 R r ) R eff ( hf q e ) e ( ( Z T ( P D P out )+T )/ T 1 ) ( I bias I th e ( ( Z T ( P D P out )+T )/ T 0 ) ),
η ext = η i ln[ 1/ ( R r R eff ) ] 2αL+ln[ 1/ ( R r R eff ) ] exp( α g L g,out ),
R eff = η 2 R g .

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