Abstract

A red-emitting tapered diode laser with a monolithically integrated distributed Bragg reflector grating is presented. The device is able to emit up to 1 W of spectrally stabilized optical output power at 5°C. Depending on the period of the tenth order surface grating the emission wavelengths of these devices from the same gain material are 635 nm, 637 nm, and 639 nm. The emission is as narrow as 9 pm (FWHM) at 637.6 nm. The lateral beam quality is M2(1/e2) = 1.2. Therefore, these devices simplify techniques such as wavelength multiplexing and fiber coupling dedicating them as light sources for µ-Raman spectroscopy, absolute distance interferometry, and holographic imaging.

© 2012 OSA

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  1. A. I. Bawamia, G. Blume, B. Eppich, A. Ginolas, S. Spießberger, M. Thomas, B. Sumpf, and G. Erbert, “Miniaturized tunable external cavity diode laser with single-mode operation and a narrow linewidth at 633 nm,” IEEE Photon. Technol. Lett.23(22), 1676–1678 (2011).
    [CrossRef]
  2. D. Feise, W. John, F. Bugge, G. Blume, T. Hassoun, J. Fricke, K. Paschke, and G. Erbert, “96 mW longitudinal single mode red-emitting DBR ridge waveguide laser with tenth order surface gratings,” Opt. Lett.37, 1532–1534 (2012).
    [CrossRef] [PubMed]
  3. B. Pezeshki, M. Hagberg, B. Lu, M. Zelinski, S. Zou, and E. I. Kolev, “High-power and diffraction-limited red lasers,” Proc. SPIE3947, 80–90 (2000).
    [CrossRef]
  4. N. Linder, R. Butendeich, C. Karnutsch, W. Schmid, S. Tautz, K. Streubel, S. Rurlander, H. Schweizer, and F. Scholz, “900 mW continuous wave operation of AlInGaP tapered lasers and superluminescent diodes at 640 nm,” Conference on Lasers and Electro-Optics (CLEO), (2004).
  5. D. Feise, G. Blume, H. Dittrich, C. Kaspari, K. Paschke, and G. Erbert, “High-brightness 635-nm tapered diode lasers with optimized index guiding,” Proc. SPIE7583, 75830V, 75830V-12 (2010).
    [CrossRef]
  6. G. Blume, D. Feise, C. Kaspari, A. Sahm, and K. Paschke, “High luminance tapered diode lasers for flying-spot display applications,” Proc. SPIE8280, 82800E, 82800E-10 (2012).
    [CrossRef]
  7. G. Blume, C. Fiebig, D. Feise, C. Kaspari, A. Sahm, K. Paschke, and G. Erbert, “Room temperature 633 nm tapered diode lasers with external wavelength stabilisation,” IET Optoelectron.3(6), 320–325 (2009).
    [CrossRef]
  8. B. Pezeshki, S. Osinski, M. Zelinski, S. O'Brien, and A. Mathur, “660 nm 250 mW GaInP/AlInP monolithically integrated master oscillator power amplifier,” Electron. Lett.33(15), 1314–1315 (1997).
    [CrossRef]
  9. C. Kaspari, M. Zorn, M. Weyers, and G. Erbert, “Growth parameter optimization of the GaInP/AlGaInP active zone of 635 nm red laser diodes,” J. Cryst. Growth310, 5175–5177 (2008).
  10. D. Feise, W. John, G. Blume, C. Kaspari, J. Fricke, K. Paschke, and G. Erbert, “Red-emitting diode lasers with internal surface DBR gratings,” Proc. SPIE8277, 827708 (2012).
    [CrossRef]
  11. C. Fiebig, V. Z. Tronciu, M. Lichtner, K. Paschke, and H. Wenzel, “Experimental and numerical study of distributed-Bragg-reflector tapered lasers,” Appl. Phys. B99(1-2), 209–214 (2010).
    [CrossRef]
  12. P. W. Milonni, and J. H. Eberly, “Lasers,” Wiley Series in Pure and Applied Optics, 6 (1988).
  13. T. Smith and J. Guild, “The C.I.E. colorimetric standards and their use,” Trans. Opt. Soc.33(3), 73–134 (1932).
    [CrossRef]

2012 (3)

D. Feise, W. John, F. Bugge, G. Blume, T. Hassoun, J. Fricke, K. Paschke, and G. Erbert, “96 mW longitudinal single mode red-emitting DBR ridge waveguide laser with tenth order surface gratings,” Opt. Lett.37, 1532–1534 (2012).
[CrossRef] [PubMed]

G. Blume, D. Feise, C. Kaspari, A. Sahm, and K. Paschke, “High luminance tapered diode lasers for flying-spot display applications,” Proc. SPIE8280, 82800E, 82800E-10 (2012).
[CrossRef]

D. Feise, W. John, G. Blume, C. Kaspari, J. Fricke, K. Paschke, and G. Erbert, “Red-emitting diode lasers with internal surface DBR gratings,” Proc. SPIE8277, 827708 (2012).
[CrossRef]

2011 (1)

A. I. Bawamia, G. Blume, B. Eppich, A. Ginolas, S. Spießberger, M. Thomas, B. Sumpf, and G. Erbert, “Miniaturized tunable external cavity diode laser with single-mode operation and a narrow linewidth at 633 nm,” IEEE Photon. Technol. Lett.23(22), 1676–1678 (2011).
[CrossRef]

2010 (2)

D. Feise, G. Blume, H. Dittrich, C. Kaspari, K. Paschke, and G. Erbert, “High-brightness 635-nm tapered diode lasers with optimized index guiding,” Proc. SPIE7583, 75830V, 75830V-12 (2010).
[CrossRef]

C. Fiebig, V. Z. Tronciu, M. Lichtner, K. Paschke, and H. Wenzel, “Experimental and numerical study of distributed-Bragg-reflector tapered lasers,” Appl. Phys. B99(1-2), 209–214 (2010).
[CrossRef]

2009 (1)

G. Blume, C. Fiebig, D. Feise, C. Kaspari, A. Sahm, K. Paschke, and G. Erbert, “Room temperature 633 nm tapered diode lasers with external wavelength stabilisation,” IET Optoelectron.3(6), 320–325 (2009).
[CrossRef]

2008 (1)

C. Kaspari, M. Zorn, M. Weyers, and G. Erbert, “Growth parameter optimization of the GaInP/AlGaInP active zone of 635 nm red laser diodes,” J. Cryst. Growth310, 5175–5177 (2008).

2000 (1)

B. Pezeshki, M. Hagberg, B. Lu, M. Zelinski, S. Zou, and E. I. Kolev, “High-power and diffraction-limited red lasers,” Proc. SPIE3947, 80–90 (2000).
[CrossRef]

1997 (1)

B. Pezeshki, S. Osinski, M. Zelinski, S. O'Brien, and A. Mathur, “660 nm 250 mW GaInP/AlInP monolithically integrated master oscillator power amplifier,” Electron. Lett.33(15), 1314–1315 (1997).
[CrossRef]

1932 (1)

T. Smith and J. Guild, “The C.I.E. colorimetric standards and their use,” Trans. Opt. Soc.33(3), 73–134 (1932).
[CrossRef]

Bawamia, A. I.

A. I. Bawamia, G. Blume, B. Eppich, A. Ginolas, S. Spießberger, M. Thomas, B. Sumpf, and G. Erbert, “Miniaturized tunable external cavity diode laser with single-mode operation and a narrow linewidth at 633 nm,” IEEE Photon. Technol. Lett.23(22), 1676–1678 (2011).
[CrossRef]

Blume, G.

D. Feise, W. John, F. Bugge, G. Blume, T. Hassoun, J. Fricke, K. Paschke, and G. Erbert, “96 mW longitudinal single mode red-emitting DBR ridge waveguide laser with tenth order surface gratings,” Opt. Lett.37, 1532–1534 (2012).
[CrossRef] [PubMed]

G. Blume, D. Feise, C. Kaspari, A. Sahm, and K. Paschke, “High luminance tapered diode lasers for flying-spot display applications,” Proc. SPIE8280, 82800E, 82800E-10 (2012).
[CrossRef]

D. Feise, W. John, G. Blume, C. Kaspari, J. Fricke, K. Paschke, and G. Erbert, “Red-emitting diode lasers with internal surface DBR gratings,” Proc. SPIE8277, 827708 (2012).
[CrossRef]

A. I. Bawamia, G. Blume, B. Eppich, A. Ginolas, S. Spießberger, M. Thomas, B. Sumpf, and G. Erbert, “Miniaturized tunable external cavity diode laser with single-mode operation and a narrow linewidth at 633 nm,” IEEE Photon. Technol. Lett.23(22), 1676–1678 (2011).
[CrossRef]

D. Feise, G. Blume, H. Dittrich, C. Kaspari, K. Paschke, and G. Erbert, “High-brightness 635-nm tapered diode lasers with optimized index guiding,” Proc. SPIE7583, 75830V, 75830V-12 (2010).
[CrossRef]

G. Blume, C. Fiebig, D. Feise, C. Kaspari, A. Sahm, K. Paschke, and G. Erbert, “Room temperature 633 nm tapered diode lasers with external wavelength stabilisation,” IET Optoelectron.3(6), 320–325 (2009).
[CrossRef]

Bugge, F.

Dittrich, H.

D. Feise, G. Blume, H. Dittrich, C. Kaspari, K. Paschke, and G. Erbert, “High-brightness 635-nm tapered diode lasers with optimized index guiding,” Proc. SPIE7583, 75830V, 75830V-12 (2010).
[CrossRef]

Eppich, B.

A. I. Bawamia, G. Blume, B. Eppich, A. Ginolas, S. Spießberger, M. Thomas, B. Sumpf, and G. Erbert, “Miniaturized tunable external cavity diode laser with single-mode operation and a narrow linewidth at 633 nm,” IEEE Photon. Technol. Lett.23(22), 1676–1678 (2011).
[CrossRef]

Erbert, G.

D. Feise, W. John, F. Bugge, G. Blume, T. Hassoun, J. Fricke, K. Paschke, and G. Erbert, “96 mW longitudinal single mode red-emitting DBR ridge waveguide laser with tenth order surface gratings,” Opt. Lett.37, 1532–1534 (2012).
[CrossRef] [PubMed]

D. Feise, W. John, G. Blume, C. Kaspari, J. Fricke, K. Paschke, and G. Erbert, “Red-emitting diode lasers with internal surface DBR gratings,” Proc. SPIE8277, 827708 (2012).
[CrossRef]

A. I. Bawamia, G. Blume, B. Eppich, A. Ginolas, S. Spießberger, M. Thomas, B. Sumpf, and G. Erbert, “Miniaturized tunable external cavity diode laser with single-mode operation and a narrow linewidth at 633 nm,” IEEE Photon. Technol. Lett.23(22), 1676–1678 (2011).
[CrossRef]

D. Feise, G. Blume, H. Dittrich, C. Kaspari, K. Paschke, and G. Erbert, “High-brightness 635-nm tapered diode lasers with optimized index guiding,” Proc. SPIE7583, 75830V, 75830V-12 (2010).
[CrossRef]

G. Blume, C. Fiebig, D. Feise, C. Kaspari, A. Sahm, K. Paschke, and G. Erbert, “Room temperature 633 nm tapered diode lasers with external wavelength stabilisation,” IET Optoelectron.3(6), 320–325 (2009).
[CrossRef]

C. Kaspari, M. Zorn, M. Weyers, and G. Erbert, “Growth parameter optimization of the GaInP/AlGaInP active zone of 635 nm red laser diodes,” J. Cryst. Growth310, 5175–5177 (2008).

Feise, D.

D. Feise, W. John, G. Blume, C. Kaspari, J. Fricke, K. Paschke, and G. Erbert, “Red-emitting diode lasers with internal surface DBR gratings,” Proc. SPIE8277, 827708 (2012).
[CrossRef]

G. Blume, D. Feise, C. Kaspari, A. Sahm, and K. Paschke, “High luminance tapered diode lasers for flying-spot display applications,” Proc. SPIE8280, 82800E, 82800E-10 (2012).
[CrossRef]

D. Feise, W. John, F. Bugge, G. Blume, T. Hassoun, J. Fricke, K. Paschke, and G. Erbert, “96 mW longitudinal single mode red-emitting DBR ridge waveguide laser with tenth order surface gratings,” Opt. Lett.37, 1532–1534 (2012).
[CrossRef] [PubMed]

D. Feise, G. Blume, H. Dittrich, C. Kaspari, K. Paschke, and G. Erbert, “High-brightness 635-nm tapered diode lasers with optimized index guiding,” Proc. SPIE7583, 75830V, 75830V-12 (2010).
[CrossRef]

G. Blume, C. Fiebig, D. Feise, C. Kaspari, A. Sahm, K. Paschke, and G. Erbert, “Room temperature 633 nm tapered diode lasers with external wavelength stabilisation,” IET Optoelectron.3(6), 320–325 (2009).
[CrossRef]

Fiebig, C.

C. Fiebig, V. Z. Tronciu, M. Lichtner, K. Paschke, and H. Wenzel, “Experimental and numerical study of distributed-Bragg-reflector tapered lasers,” Appl. Phys. B99(1-2), 209–214 (2010).
[CrossRef]

G. Blume, C. Fiebig, D. Feise, C. Kaspari, A. Sahm, K. Paschke, and G. Erbert, “Room temperature 633 nm tapered diode lasers with external wavelength stabilisation,” IET Optoelectron.3(6), 320–325 (2009).
[CrossRef]

Fricke, J.

D. Feise, W. John, F. Bugge, G. Blume, T. Hassoun, J. Fricke, K. Paschke, and G. Erbert, “96 mW longitudinal single mode red-emitting DBR ridge waveguide laser with tenth order surface gratings,” Opt. Lett.37, 1532–1534 (2012).
[CrossRef] [PubMed]

D. Feise, W. John, G. Blume, C. Kaspari, J. Fricke, K. Paschke, and G. Erbert, “Red-emitting diode lasers with internal surface DBR gratings,” Proc. SPIE8277, 827708 (2012).
[CrossRef]

Ginolas, A.

A. I. Bawamia, G. Blume, B. Eppich, A. Ginolas, S. Spießberger, M. Thomas, B. Sumpf, and G. Erbert, “Miniaturized tunable external cavity diode laser with single-mode operation and a narrow linewidth at 633 nm,” IEEE Photon. Technol. Lett.23(22), 1676–1678 (2011).
[CrossRef]

Guild, J.

T. Smith and J. Guild, “The C.I.E. colorimetric standards and their use,” Trans. Opt. Soc.33(3), 73–134 (1932).
[CrossRef]

Hagberg, M.

B. Pezeshki, M. Hagberg, B. Lu, M. Zelinski, S. Zou, and E. I. Kolev, “High-power and diffraction-limited red lasers,” Proc. SPIE3947, 80–90 (2000).
[CrossRef]

Hassoun, T.

John, W.

D. Feise, W. John, F. Bugge, G. Blume, T. Hassoun, J. Fricke, K. Paschke, and G. Erbert, “96 mW longitudinal single mode red-emitting DBR ridge waveguide laser with tenth order surface gratings,” Opt. Lett.37, 1532–1534 (2012).
[CrossRef] [PubMed]

D. Feise, W. John, G. Blume, C. Kaspari, J. Fricke, K. Paschke, and G. Erbert, “Red-emitting diode lasers with internal surface DBR gratings,” Proc. SPIE8277, 827708 (2012).
[CrossRef]

Kaspari, C.

D. Feise, W. John, G. Blume, C. Kaspari, J. Fricke, K. Paschke, and G. Erbert, “Red-emitting diode lasers with internal surface DBR gratings,” Proc. SPIE8277, 827708 (2012).
[CrossRef]

G. Blume, D. Feise, C. Kaspari, A. Sahm, and K. Paschke, “High luminance tapered diode lasers for flying-spot display applications,” Proc. SPIE8280, 82800E, 82800E-10 (2012).
[CrossRef]

D. Feise, G. Blume, H. Dittrich, C. Kaspari, K. Paschke, and G. Erbert, “High-brightness 635-nm tapered diode lasers with optimized index guiding,” Proc. SPIE7583, 75830V, 75830V-12 (2010).
[CrossRef]

G. Blume, C. Fiebig, D. Feise, C. Kaspari, A. Sahm, K. Paschke, and G. Erbert, “Room temperature 633 nm tapered diode lasers with external wavelength stabilisation,” IET Optoelectron.3(6), 320–325 (2009).
[CrossRef]

C. Kaspari, M. Zorn, M. Weyers, and G. Erbert, “Growth parameter optimization of the GaInP/AlGaInP active zone of 635 nm red laser diodes,” J. Cryst. Growth310, 5175–5177 (2008).

Kolev, E. I.

B. Pezeshki, M. Hagberg, B. Lu, M. Zelinski, S. Zou, and E. I. Kolev, “High-power and diffraction-limited red lasers,” Proc. SPIE3947, 80–90 (2000).
[CrossRef]

Lichtner, M.

C. Fiebig, V. Z. Tronciu, M. Lichtner, K. Paschke, and H. Wenzel, “Experimental and numerical study of distributed-Bragg-reflector tapered lasers,” Appl. Phys. B99(1-2), 209–214 (2010).
[CrossRef]

Lu, B.

B. Pezeshki, M. Hagberg, B. Lu, M. Zelinski, S. Zou, and E. I. Kolev, “High-power and diffraction-limited red lasers,” Proc. SPIE3947, 80–90 (2000).
[CrossRef]

Mathur, A.

B. Pezeshki, S. Osinski, M. Zelinski, S. O'Brien, and A. Mathur, “660 nm 250 mW GaInP/AlInP monolithically integrated master oscillator power amplifier,” Electron. Lett.33(15), 1314–1315 (1997).
[CrossRef]

O'Brien, S.

B. Pezeshki, S. Osinski, M. Zelinski, S. O'Brien, and A. Mathur, “660 nm 250 mW GaInP/AlInP monolithically integrated master oscillator power amplifier,” Electron. Lett.33(15), 1314–1315 (1997).
[CrossRef]

Osinski, S.

B. Pezeshki, S. Osinski, M. Zelinski, S. O'Brien, and A. Mathur, “660 nm 250 mW GaInP/AlInP monolithically integrated master oscillator power amplifier,” Electron. Lett.33(15), 1314–1315 (1997).
[CrossRef]

Paschke, K.

D. Feise, W. John, G. Blume, C. Kaspari, J. Fricke, K. Paschke, and G. Erbert, “Red-emitting diode lasers with internal surface DBR gratings,” Proc. SPIE8277, 827708 (2012).
[CrossRef]

D. Feise, W. John, F. Bugge, G. Blume, T. Hassoun, J. Fricke, K. Paschke, and G. Erbert, “96 mW longitudinal single mode red-emitting DBR ridge waveguide laser with tenth order surface gratings,” Opt. Lett.37, 1532–1534 (2012).
[CrossRef] [PubMed]

G. Blume, D. Feise, C. Kaspari, A. Sahm, and K. Paschke, “High luminance tapered diode lasers for flying-spot display applications,” Proc. SPIE8280, 82800E, 82800E-10 (2012).
[CrossRef]

D. Feise, G. Blume, H. Dittrich, C. Kaspari, K. Paschke, and G. Erbert, “High-brightness 635-nm tapered diode lasers with optimized index guiding,” Proc. SPIE7583, 75830V, 75830V-12 (2010).
[CrossRef]

C. Fiebig, V. Z. Tronciu, M. Lichtner, K. Paschke, and H. Wenzel, “Experimental and numerical study of distributed-Bragg-reflector tapered lasers,” Appl. Phys. B99(1-2), 209–214 (2010).
[CrossRef]

G. Blume, C. Fiebig, D. Feise, C. Kaspari, A. Sahm, K. Paschke, and G. Erbert, “Room temperature 633 nm tapered diode lasers with external wavelength stabilisation,” IET Optoelectron.3(6), 320–325 (2009).
[CrossRef]

Pezeshki, B.

B. Pezeshki, M. Hagberg, B. Lu, M. Zelinski, S. Zou, and E. I. Kolev, “High-power and diffraction-limited red lasers,” Proc. SPIE3947, 80–90 (2000).
[CrossRef]

B. Pezeshki, S. Osinski, M. Zelinski, S. O'Brien, and A. Mathur, “660 nm 250 mW GaInP/AlInP monolithically integrated master oscillator power amplifier,” Electron. Lett.33(15), 1314–1315 (1997).
[CrossRef]

Sahm, A.

G. Blume, D. Feise, C. Kaspari, A. Sahm, and K. Paschke, “High luminance tapered diode lasers for flying-spot display applications,” Proc. SPIE8280, 82800E, 82800E-10 (2012).
[CrossRef]

G. Blume, C. Fiebig, D. Feise, C. Kaspari, A. Sahm, K. Paschke, and G. Erbert, “Room temperature 633 nm tapered diode lasers with external wavelength stabilisation,” IET Optoelectron.3(6), 320–325 (2009).
[CrossRef]

Smith, T.

T. Smith and J. Guild, “The C.I.E. colorimetric standards and their use,” Trans. Opt. Soc.33(3), 73–134 (1932).
[CrossRef]

Spießberger, S.

A. I. Bawamia, G. Blume, B. Eppich, A. Ginolas, S. Spießberger, M. Thomas, B. Sumpf, and G. Erbert, “Miniaturized tunable external cavity diode laser with single-mode operation and a narrow linewidth at 633 nm,” IEEE Photon. Technol. Lett.23(22), 1676–1678 (2011).
[CrossRef]

Sumpf, B.

A. I. Bawamia, G. Blume, B. Eppich, A. Ginolas, S. Spießberger, M. Thomas, B. Sumpf, and G. Erbert, “Miniaturized tunable external cavity diode laser with single-mode operation and a narrow linewidth at 633 nm,” IEEE Photon. Technol. Lett.23(22), 1676–1678 (2011).
[CrossRef]

Thomas, M.

A. I. Bawamia, G. Blume, B. Eppich, A. Ginolas, S. Spießberger, M. Thomas, B. Sumpf, and G. Erbert, “Miniaturized tunable external cavity diode laser with single-mode operation and a narrow linewidth at 633 nm,” IEEE Photon. Technol. Lett.23(22), 1676–1678 (2011).
[CrossRef]

Tronciu, V. Z.

C. Fiebig, V. Z. Tronciu, M. Lichtner, K. Paschke, and H. Wenzel, “Experimental and numerical study of distributed-Bragg-reflector tapered lasers,” Appl. Phys. B99(1-2), 209–214 (2010).
[CrossRef]

Wenzel, H.

C. Fiebig, V. Z. Tronciu, M. Lichtner, K. Paschke, and H. Wenzel, “Experimental and numerical study of distributed-Bragg-reflector tapered lasers,” Appl. Phys. B99(1-2), 209–214 (2010).
[CrossRef]

Weyers, M.

C. Kaspari, M. Zorn, M. Weyers, and G. Erbert, “Growth parameter optimization of the GaInP/AlGaInP active zone of 635 nm red laser diodes,” J. Cryst. Growth310, 5175–5177 (2008).

Zelinski, M.

B. Pezeshki, M. Hagberg, B. Lu, M. Zelinski, S. Zou, and E. I. Kolev, “High-power and diffraction-limited red lasers,” Proc. SPIE3947, 80–90 (2000).
[CrossRef]

B. Pezeshki, S. Osinski, M. Zelinski, S. O'Brien, and A. Mathur, “660 nm 250 mW GaInP/AlInP monolithically integrated master oscillator power amplifier,” Electron. Lett.33(15), 1314–1315 (1997).
[CrossRef]

Zorn, M.

C. Kaspari, M. Zorn, M. Weyers, and G. Erbert, “Growth parameter optimization of the GaInP/AlGaInP active zone of 635 nm red laser diodes,” J. Cryst. Growth310, 5175–5177 (2008).

Zou, S.

B. Pezeshki, M. Hagberg, B. Lu, M. Zelinski, S. Zou, and E. I. Kolev, “High-power and diffraction-limited red lasers,” Proc. SPIE3947, 80–90 (2000).
[CrossRef]

Appl. Phys. B (1)

C. Fiebig, V. Z. Tronciu, M. Lichtner, K. Paschke, and H. Wenzel, “Experimental and numerical study of distributed-Bragg-reflector tapered lasers,” Appl. Phys. B99(1-2), 209–214 (2010).
[CrossRef]

Electron. Lett. (1)

B. Pezeshki, S. Osinski, M. Zelinski, S. O'Brien, and A. Mathur, “660 nm 250 mW GaInP/AlInP monolithically integrated master oscillator power amplifier,” Electron. Lett.33(15), 1314–1315 (1997).
[CrossRef]

IEEE Photon. Technol. Lett. (1)

A. I. Bawamia, G. Blume, B. Eppich, A. Ginolas, S. Spießberger, M. Thomas, B. Sumpf, and G. Erbert, “Miniaturized tunable external cavity diode laser with single-mode operation and a narrow linewidth at 633 nm,” IEEE Photon. Technol. Lett.23(22), 1676–1678 (2011).
[CrossRef]

IET Optoelectron. (1)

G. Blume, C. Fiebig, D. Feise, C. Kaspari, A. Sahm, K. Paschke, and G. Erbert, “Room temperature 633 nm tapered diode lasers with external wavelength stabilisation,” IET Optoelectron.3(6), 320–325 (2009).
[CrossRef]

J. Cryst. Growth (1)

C. Kaspari, M. Zorn, M. Weyers, and G. Erbert, “Growth parameter optimization of the GaInP/AlGaInP active zone of 635 nm red laser diodes,” J. Cryst. Growth310, 5175–5177 (2008).

Opt. Lett. (1)

Proc. SPIE (4)

B. Pezeshki, M. Hagberg, B. Lu, M. Zelinski, S. Zou, and E. I. Kolev, “High-power and diffraction-limited red lasers,” Proc. SPIE3947, 80–90 (2000).
[CrossRef]

D. Feise, W. John, G. Blume, C. Kaspari, J. Fricke, K. Paschke, and G. Erbert, “Red-emitting diode lasers with internal surface DBR gratings,” Proc. SPIE8277, 827708 (2012).
[CrossRef]

D. Feise, G. Blume, H. Dittrich, C. Kaspari, K. Paschke, and G. Erbert, “High-brightness 635-nm tapered diode lasers with optimized index guiding,” Proc. SPIE7583, 75830V, 75830V-12 (2010).
[CrossRef]

G. Blume, D. Feise, C. Kaspari, A. Sahm, and K. Paschke, “High luminance tapered diode lasers for flying-spot display applications,” Proc. SPIE8280, 82800E, 82800E-10 (2012).
[CrossRef]

Trans. Opt. Soc. (1)

T. Smith and J. Guild, “The C.I.E. colorimetric standards and their use,” Trans. Opt. Soc.33(3), 73–134 (1932).
[CrossRef]

Other (2)

P. W. Milonni, and J. H. Eberly, “Lasers,” Wiley Series in Pure and Applied Optics, 6 (1988).

N. Linder, R. Butendeich, C. Karnutsch, W. Schmid, S. Tautz, K. Streubel, S. Rurlander, H. Schweizer, and F. Scholz, “900 mW continuous wave operation of AlInGaP tapered lasers and superluminescent diodes at 640 nm,” Conference on Lasers and Electro-Optics (CLEO), (2004).

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Figures (8)

Fig. 1
Fig. 1

SEM picture of the epitaxial structure with integrated DBR surface gratings.

Fig. 2
Fig. 2

Drawing (not to scale) of a DBR-TPL with three sections: the RW-, and TA-section and a monolithically integrated grating section which replaces the high-reflectivity-coating at the rear facet by a DBR surface grating

Fig. 3
Fig. 3

(a) Power-current characteristics of a DBR-TPL (grating period Λ = 976 nm, emitting at 637.6 nm) and a FP-TPL at 15°C. The devices were operated with separate contacts for RW- and TA-section. The current to RW-section was 80 mA (DBR) and 20 mA (FP). (b) P-I-characteristics of the same DBR-TPL (grating period Λ = 976 nm, emitting at 637.6 nm) at different heat sink temperatures.

Fig. 4
Fig. 4

Color contour plots of a FP-TPL at IRW = 20 mA (a) and three DBR-TPLs with Λ = 972; 976; 980 nm at IRW = 80 mA (b) and T = 15°C

Fig. 5
Fig. 5

Spectrum of three DBR-TPL with grating periods Λ = 972; 976; 980 nm and one FP-TPL at 15°C.

Fig. 6
Fig. 6

Lateral intensity distributions of near field (a), beam waist (b), and far field distribution (c) of a DBR-TPL with grating periods Λ = 976 nm at 5°C and ITA = 2.3 A corresponding to 1 W (OP 1.1).

Fig. 7
Fig. 7

Lateral intensity distributions at the beam waist of a DBR-TPL with grating periods Λ = 976 nm at ITA = 1.3; 1.7; 2.2 A (OP 1.2) (a) and a FP-TPL at ITA = 1; 1.4 (OP 2.1); 1.7 A (OP 2.2) (b) at 15°C.

Fig. 8
Fig. 8

Beam waist variation according to 1/e2-level and second order moments criteria (σ) vs. TA-current of a DBR-TPL with grating periods Λ = 976 nm (a) and a FP-TPL (b) at 15°C

Tables (3)

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Table 1 Characteristic data of laser structure A (used for fabrication of FP-TPL) and B (used for DBR-TPL)

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Table 2 Beam quality factors of the observed DBR- and FP-TPLs for different operating points (OP)

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Table 3 Radiance and spectral radiance of the observed DBR- and FP-TPLs for different OPs

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