Abstract

Mn-doped ZnO has attracted considerable attention as an important kind of diluted magnetic semiconductors (DMSs). Here we report a new finding of lateral photovoltaic effect (LPE) in Mn-doped ZnO thin film based on DMS/SiO2/Si structure. Remarkably the induced LPE laser can be extended to infrared region in Mn-doped ZnO film. Besides we studied the dependence of the lateral photovoltage (LPV) position sensitivity on the laser wavelength and optical power by modulating the two factors and give a complete theoretical analysis. The LPE observation adds a significant new functionality to this DMS material and suggests Mn-doped ZnO a potential candidate for versatile devices.

© 2012 OSA

Full Article  |  PDF Article

References

  • View by:
  • |
  • |
  • |

  1. S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnár, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, “Spintronics: A Spin-Based Electronics Vision for the Future,” Science294(5546), 1488–1495 (2001).
    [CrossRef] [PubMed]
  2. T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, “Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors,” Science287(5455), 1019–1022 (2000).
    [CrossRef] [PubMed]
  3. S. W. Jung, S. J. An, G. C. Yi, C. U. Jung, S. Lee, and S. Cho, “Ferromagnetic properties of Zn1-xMnxO epitaxial thin films,” Appl. Phys. Lett.80, 4561–4563 (2002).
  4. P. Sharma, A. Gupta, K. V. Rao, F. J. Owens, R. Sharma, R. Ahuja, J. M. Guillen, B. Johansson, and G. A. Gehring, “Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO,” Nat. Mater.2(10), 673–677 (2003).
    [CrossRef] [PubMed]
  5. J. R. Neal, A. J. Behan, R. M. Ibrahim, H. J. Blythe, M. Ziese, A. M. Fox, and G. A. Gehring, “Room-Temperature Magneto-Optics of Ferromagnetic Transition-Metal-Doped ZnO Thin Films,” Phys. Rev. Lett.96(19), 197208 (2006).
    [CrossRef] [PubMed]
  6. A. C. Mofor, A. El-Shaer, A. Bakin, A. Waag, H. Ahlers, U. Siegner, S. Sievers, M. Albrecht, W. Schoch, N. Izyumskaya, V. Avrutin, S. Sorokin, S. Ivanov, and J. Stoimenos, “Magnetic property investigations on Mn-doped ZnO Layers on sapphire,” Appl. Phys. Lett.87(6), 062501 (2005).
    [CrossRef]
  7. W. Yan, Z. Sun, Q. Liu, Z. Li, Z. Pan, J. Wang, S. Wei, D. Wang, Y. Zhou, and X. Zhang, “Zn vacancy induced room-temperature ferromagnetism in Mn-doped ZnO,” Appl. Phys. Lett.91(6), 062113 (2007).
    [CrossRef]
  8. B. B. Straumal, S. G. Protasova, A. A. Mazilkin, A. A. Myatiev, P. B. Straumal, G. Schütz, E. Goering, and B. Baretzky, “Ferromagnetic properties of the Mn-doped nanograined ZnO films,” J. Appl. Phys.108(7), 073923 (2010).
    [CrossRef]
  9. H. Y. Peng, G. P. Li, J. Y. Ye, Z. P. Wei, Z. Zhang, D. D. Wang, G. Z. Xing, and T. Wu, “Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms,” Appl. Phys. Lett.96(19), 192113 (2010).
    [CrossRef]
  10. Z. Yang, Z. Zuo, H. M. Zhou, W. P. Beyermann, and J. L. Liu, “Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy,” J. Cryst. Growth314(1), 97–103 (2011).
    [CrossRef]
  11. L. Du and H. Wang, “Infrared laser induced lateral photovoltaic effect observed in Cu2O nanoscale film,” Opt. Express18(9), 9113–9118 (2010).
    [CrossRef] [PubMed]
  12. J. Lu and H. Wang, “Large lateral photovoltaic effect observed in nano Al-doped ZnO films,” Opt. Express19(15), 13806–13811 (2011).
    [CrossRef] [PubMed]
  13. Y. M. Hu, C. Y. Wang, S. S. Lee, T. C. Han, W. Y. Chou, and G. J. Chen, “Identification of Mn-related Raman modes in Mn-doped ZnO thin films,” J. Raman Spectrosc.42(3), 434–437 (2011).
    [CrossRef]
  14. T.-L. Phan, “Structural, optical and magnetic properties of polycrystalline Zn1−xMnxO ceramics,” Solid State Commun.151(1), 24–28 (2011).
    [CrossRef]
  15. Z. H. Zhang, X. F. Wang, J. B. Xu, S. Muller, C. Ronning, and Q. Li, “Evidence of intrinsic ferromagnetism in individual dilute magnetic semiconducting nanostructures,” Nat. Nanotechnol.4(8), 523–527 (2009).
    [CrossRef] [PubMed]
  16. T. Fukumura, Z. Jin, A. Ohtomo, H. Koinuma, and M. Kawasaki, “An oxide-diluted magnetic semiconductor: Mn-doped ZnO,” Appl. Phys. Lett.75(21), 3366–3368 (1999).
  17. G. Lucovsky, “Photoeffects in nonuniformly irradiated p-n junctions,” J. Appl. Phys.31(6), 1088–1095 (1960).
    [CrossRef]
  18. C. Q. Yu, H. Wang, S. Q. Xiao, and Y. X. Xia, “Direct observation of lateral photovoltaic effect in nano-metal-films,” Opt. Express17(24), 21712–21722 (2009).
    [CrossRef] [PubMed]
  19. Y. Tawada, K. Tsuge, M. Kondo, H. Okamoto, and Y. Hamakawa, “Properties and structure of aSiC:H for highefficiency aSi solar cell,” J. Appl. Phys.53(7), 5273–5281 (1982).
    [CrossRef]
  20. J. A. Anna Selvana, A. E. Delahoya, S. Guo, and Y. M. Li, “A new light trapping TCO for nc-Si:H solar cells,” Sol. Energy Mater. Sol. Cells90, 3371–3376 (2006).

2011 (4)

J. Lu and H. Wang, “Large lateral photovoltaic effect observed in nano Al-doped ZnO films,” Opt. Express19(15), 13806–13811 (2011).
[CrossRef] [PubMed]

Y. M. Hu, C. Y. Wang, S. S. Lee, T. C. Han, W. Y. Chou, and G. J. Chen, “Identification of Mn-related Raman modes in Mn-doped ZnO thin films,” J. Raman Spectrosc.42(3), 434–437 (2011).
[CrossRef]

T.-L. Phan, “Structural, optical and magnetic properties of polycrystalline Zn1−xMnxO ceramics,” Solid State Commun.151(1), 24–28 (2011).
[CrossRef]

Z. Yang, Z. Zuo, H. M. Zhou, W. P. Beyermann, and J. L. Liu, “Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy,” J. Cryst. Growth314(1), 97–103 (2011).
[CrossRef]

2010 (3)

L. Du and H. Wang, “Infrared laser induced lateral photovoltaic effect observed in Cu2O nanoscale film,” Opt. Express18(9), 9113–9118 (2010).
[CrossRef] [PubMed]

B. B. Straumal, S. G. Protasova, A. A. Mazilkin, A. A. Myatiev, P. B. Straumal, G. Schütz, E. Goering, and B. Baretzky, “Ferromagnetic properties of the Mn-doped nanograined ZnO films,” J. Appl. Phys.108(7), 073923 (2010).
[CrossRef]

H. Y. Peng, G. P. Li, J. Y. Ye, Z. P. Wei, Z. Zhang, D. D. Wang, G. Z. Xing, and T. Wu, “Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms,” Appl. Phys. Lett.96(19), 192113 (2010).
[CrossRef]

2009 (2)

C. Q. Yu, H. Wang, S. Q. Xiao, and Y. X. Xia, “Direct observation of lateral photovoltaic effect in nano-metal-films,” Opt. Express17(24), 21712–21722 (2009).
[CrossRef] [PubMed]

Z. H. Zhang, X. F. Wang, J. B. Xu, S. Muller, C. Ronning, and Q. Li, “Evidence of intrinsic ferromagnetism in individual dilute magnetic semiconducting nanostructures,” Nat. Nanotechnol.4(8), 523–527 (2009).
[CrossRef] [PubMed]

2007 (1)

W. Yan, Z. Sun, Q. Liu, Z. Li, Z. Pan, J. Wang, S. Wei, D. Wang, Y. Zhou, and X. Zhang, “Zn vacancy induced room-temperature ferromagnetism in Mn-doped ZnO,” Appl. Phys. Lett.91(6), 062113 (2007).
[CrossRef]

2006 (2)

J. A. Anna Selvana, A. E. Delahoya, S. Guo, and Y. M. Li, “A new light trapping TCO for nc-Si:H solar cells,” Sol. Energy Mater. Sol. Cells90, 3371–3376 (2006).

J. R. Neal, A. J. Behan, R. M. Ibrahim, H. J. Blythe, M. Ziese, A. M. Fox, and G. A. Gehring, “Room-Temperature Magneto-Optics of Ferromagnetic Transition-Metal-Doped ZnO Thin Films,” Phys. Rev. Lett.96(19), 197208 (2006).
[CrossRef] [PubMed]

2005 (1)

A. C. Mofor, A. El-Shaer, A. Bakin, A. Waag, H. Ahlers, U. Siegner, S. Sievers, M. Albrecht, W. Schoch, N. Izyumskaya, V. Avrutin, S. Sorokin, S. Ivanov, and J. Stoimenos, “Magnetic property investigations on Mn-doped ZnO Layers on sapphire,” Appl. Phys. Lett.87(6), 062501 (2005).
[CrossRef]

2003 (1)

P. Sharma, A. Gupta, K. V. Rao, F. J. Owens, R. Sharma, R. Ahuja, J. M. Guillen, B. Johansson, and G. A. Gehring, “Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO,” Nat. Mater.2(10), 673–677 (2003).
[CrossRef] [PubMed]

2002 (1)

S. W. Jung, S. J. An, G. C. Yi, C. U. Jung, S. Lee, and S. Cho, “Ferromagnetic properties of Zn1-xMnxO epitaxial thin films,” Appl. Phys. Lett.80, 4561–4563 (2002).

2001 (1)

S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnár, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, “Spintronics: A Spin-Based Electronics Vision for the Future,” Science294(5546), 1488–1495 (2001).
[CrossRef] [PubMed]

2000 (1)

T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, “Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors,” Science287(5455), 1019–1022 (2000).
[CrossRef] [PubMed]

1999 (1)

T. Fukumura, Z. Jin, A. Ohtomo, H. Koinuma, and M. Kawasaki, “An oxide-diluted magnetic semiconductor: Mn-doped ZnO,” Appl. Phys. Lett.75(21), 3366–3368 (1999).

1982 (1)

Y. Tawada, K. Tsuge, M. Kondo, H. Okamoto, and Y. Hamakawa, “Properties and structure of aSiC:H for highefficiency aSi solar cell,” J. Appl. Phys.53(7), 5273–5281 (1982).
[CrossRef]

1960 (1)

G. Lucovsky, “Photoeffects in nonuniformly irradiated p-n junctions,” J. Appl. Phys.31(6), 1088–1095 (1960).
[CrossRef]

Ahlers, H.

A. C. Mofor, A. El-Shaer, A. Bakin, A. Waag, H. Ahlers, U. Siegner, S. Sievers, M. Albrecht, W. Schoch, N. Izyumskaya, V. Avrutin, S. Sorokin, S. Ivanov, and J. Stoimenos, “Magnetic property investigations on Mn-doped ZnO Layers on sapphire,” Appl. Phys. Lett.87(6), 062501 (2005).
[CrossRef]

Ahuja, R.

P. Sharma, A. Gupta, K. V. Rao, F. J. Owens, R. Sharma, R. Ahuja, J. M. Guillen, B. Johansson, and G. A. Gehring, “Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO,” Nat. Mater.2(10), 673–677 (2003).
[CrossRef] [PubMed]

Albrecht, M.

A. C. Mofor, A. El-Shaer, A. Bakin, A. Waag, H. Ahlers, U. Siegner, S. Sievers, M. Albrecht, W. Schoch, N. Izyumskaya, V. Avrutin, S. Sorokin, S. Ivanov, and J. Stoimenos, “Magnetic property investigations on Mn-doped ZnO Layers on sapphire,” Appl. Phys. Lett.87(6), 062501 (2005).
[CrossRef]

An, S. J.

S. W. Jung, S. J. An, G. C. Yi, C. U. Jung, S. Lee, and S. Cho, “Ferromagnetic properties of Zn1-xMnxO epitaxial thin films,” Appl. Phys. Lett.80, 4561–4563 (2002).

Anna Selvana, J. A.

J. A. Anna Selvana, A. E. Delahoya, S. Guo, and Y. M. Li, “A new light trapping TCO for nc-Si:H solar cells,” Sol. Energy Mater. Sol. Cells90, 3371–3376 (2006).

Avrutin, V.

A. C. Mofor, A. El-Shaer, A. Bakin, A. Waag, H. Ahlers, U. Siegner, S. Sievers, M. Albrecht, W. Schoch, N. Izyumskaya, V. Avrutin, S. Sorokin, S. Ivanov, and J. Stoimenos, “Magnetic property investigations on Mn-doped ZnO Layers on sapphire,” Appl. Phys. Lett.87(6), 062501 (2005).
[CrossRef]

Awschalom, D. D.

S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnár, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, “Spintronics: A Spin-Based Electronics Vision for the Future,” Science294(5546), 1488–1495 (2001).
[CrossRef] [PubMed]

Bakin, A.

A. C. Mofor, A. El-Shaer, A. Bakin, A. Waag, H. Ahlers, U. Siegner, S. Sievers, M. Albrecht, W. Schoch, N. Izyumskaya, V. Avrutin, S. Sorokin, S. Ivanov, and J. Stoimenos, “Magnetic property investigations on Mn-doped ZnO Layers on sapphire,” Appl. Phys. Lett.87(6), 062501 (2005).
[CrossRef]

Baretzky, B.

B. B. Straumal, S. G. Protasova, A. A. Mazilkin, A. A. Myatiev, P. B. Straumal, G. Schütz, E. Goering, and B. Baretzky, “Ferromagnetic properties of the Mn-doped nanograined ZnO films,” J. Appl. Phys.108(7), 073923 (2010).
[CrossRef]

Behan, A. J.

J. R. Neal, A. J. Behan, R. M. Ibrahim, H. J. Blythe, M. Ziese, A. M. Fox, and G. A. Gehring, “Room-Temperature Magneto-Optics of Ferromagnetic Transition-Metal-Doped ZnO Thin Films,” Phys. Rev. Lett.96(19), 197208 (2006).
[CrossRef] [PubMed]

Beyermann, W. P.

Z. Yang, Z. Zuo, H. M. Zhou, W. P. Beyermann, and J. L. Liu, “Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy,” J. Cryst. Growth314(1), 97–103 (2011).
[CrossRef]

Blythe, H. J.

J. R. Neal, A. J. Behan, R. M. Ibrahim, H. J. Blythe, M. Ziese, A. M. Fox, and G. A. Gehring, “Room-Temperature Magneto-Optics of Ferromagnetic Transition-Metal-Doped ZnO Thin Films,” Phys. Rev. Lett.96(19), 197208 (2006).
[CrossRef] [PubMed]

Buhrman, R. A.

S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnár, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, “Spintronics: A Spin-Based Electronics Vision for the Future,” Science294(5546), 1488–1495 (2001).
[CrossRef] [PubMed]

Chen, G. J.

Y. M. Hu, C. Y. Wang, S. S. Lee, T. C. Han, W. Y. Chou, and G. J. Chen, “Identification of Mn-related Raman modes in Mn-doped ZnO thin films,” J. Raman Spectrosc.42(3), 434–437 (2011).
[CrossRef]

Cho, S.

S. W. Jung, S. J. An, G. C. Yi, C. U. Jung, S. Lee, and S. Cho, “Ferromagnetic properties of Zn1-xMnxO epitaxial thin films,” Appl. Phys. Lett.80, 4561–4563 (2002).

Chou, W. Y.

Y. M. Hu, C. Y. Wang, S. S. Lee, T. C. Han, W. Y. Chou, and G. J. Chen, “Identification of Mn-related Raman modes in Mn-doped ZnO thin films,” J. Raman Spectrosc.42(3), 434–437 (2011).
[CrossRef]

Chtchelkanova, A. Y.

S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnár, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, “Spintronics: A Spin-Based Electronics Vision for the Future,” Science294(5546), 1488–1495 (2001).
[CrossRef] [PubMed]

Cibert, J.

T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, “Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors,” Science287(5455), 1019–1022 (2000).
[CrossRef] [PubMed]

Daughton, J. M.

S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnár, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, “Spintronics: A Spin-Based Electronics Vision for the Future,” Science294(5546), 1488–1495 (2001).
[CrossRef] [PubMed]

Delahoya, A. E.

J. A. Anna Selvana, A. E. Delahoya, S. Guo, and Y. M. Li, “A new light trapping TCO for nc-Si:H solar cells,” Sol. Energy Mater. Sol. Cells90, 3371–3376 (2006).

Dietl, T.

T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, “Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors,” Science287(5455), 1019–1022 (2000).
[CrossRef] [PubMed]

Du, L.

El-Shaer, A.

A. C. Mofor, A. El-Shaer, A. Bakin, A. Waag, H. Ahlers, U. Siegner, S. Sievers, M. Albrecht, W. Schoch, N. Izyumskaya, V. Avrutin, S. Sorokin, S. Ivanov, and J. Stoimenos, “Magnetic property investigations on Mn-doped ZnO Layers on sapphire,” Appl. Phys. Lett.87(6), 062501 (2005).
[CrossRef]

Ferrand, D.

T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, “Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors,” Science287(5455), 1019–1022 (2000).
[CrossRef] [PubMed]

Fox, A. M.

J. R. Neal, A. J. Behan, R. M. Ibrahim, H. J. Blythe, M. Ziese, A. M. Fox, and G. A. Gehring, “Room-Temperature Magneto-Optics of Ferromagnetic Transition-Metal-Doped ZnO Thin Films,” Phys. Rev. Lett.96(19), 197208 (2006).
[CrossRef] [PubMed]

Fukumura, T.

T. Fukumura, Z. Jin, A. Ohtomo, H. Koinuma, and M. Kawasaki, “An oxide-diluted magnetic semiconductor: Mn-doped ZnO,” Appl. Phys. Lett.75(21), 3366–3368 (1999).

Gehring, G. A.

J. R. Neal, A. J. Behan, R. M. Ibrahim, H. J. Blythe, M. Ziese, A. M. Fox, and G. A. Gehring, “Room-Temperature Magneto-Optics of Ferromagnetic Transition-Metal-Doped ZnO Thin Films,” Phys. Rev. Lett.96(19), 197208 (2006).
[CrossRef] [PubMed]

P. Sharma, A. Gupta, K. V. Rao, F. J. Owens, R. Sharma, R. Ahuja, J. M. Guillen, B. Johansson, and G. A. Gehring, “Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO,” Nat. Mater.2(10), 673–677 (2003).
[CrossRef] [PubMed]

Goering, E.

B. B. Straumal, S. G. Protasova, A. A. Mazilkin, A. A. Myatiev, P. B. Straumal, G. Schütz, E. Goering, and B. Baretzky, “Ferromagnetic properties of the Mn-doped nanograined ZnO films,” J. Appl. Phys.108(7), 073923 (2010).
[CrossRef]

Guillen, J. M.

P. Sharma, A. Gupta, K. V. Rao, F. J. Owens, R. Sharma, R. Ahuja, J. M. Guillen, B. Johansson, and G. A. Gehring, “Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO,” Nat. Mater.2(10), 673–677 (2003).
[CrossRef] [PubMed]

Guo, S.

J. A. Anna Selvana, A. E. Delahoya, S. Guo, and Y. M. Li, “A new light trapping TCO for nc-Si:H solar cells,” Sol. Energy Mater. Sol. Cells90, 3371–3376 (2006).

Gupta, A.

P. Sharma, A. Gupta, K. V. Rao, F. J. Owens, R. Sharma, R. Ahuja, J. M. Guillen, B. Johansson, and G. A. Gehring, “Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO,” Nat. Mater.2(10), 673–677 (2003).
[CrossRef] [PubMed]

Hamakawa, Y.

Y. Tawada, K. Tsuge, M. Kondo, H. Okamoto, and Y. Hamakawa, “Properties and structure of aSiC:H for highefficiency aSi solar cell,” J. Appl. Phys.53(7), 5273–5281 (1982).
[CrossRef]

Han, T. C.

Y. M. Hu, C. Y. Wang, S. S. Lee, T. C. Han, W. Y. Chou, and G. J. Chen, “Identification of Mn-related Raman modes in Mn-doped ZnO thin films,” J. Raman Spectrosc.42(3), 434–437 (2011).
[CrossRef]

Hu, Y. M.

Y. M. Hu, C. Y. Wang, S. S. Lee, T. C. Han, W. Y. Chou, and G. J. Chen, “Identification of Mn-related Raman modes in Mn-doped ZnO thin films,” J. Raman Spectrosc.42(3), 434–437 (2011).
[CrossRef]

Ibrahim, R. M.

J. R. Neal, A. J. Behan, R. M. Ibrahim, H. J. Blythe, M. Ziese, A. M. Fox, and G. A. Gehring, “Room-Temperature Magneto-Optics of Ferromagnetic Transition-Metal-Doped ZnO Thin Films,” Phys. Rev. Lett.96(19), 197208 (2006).
[CrossRef] [PubMed]

Ivanov, S.

A. C. Mofor, A. El-Shaer, A. Bakin, A. Waag, H. Ahlers, U. Siegner, S. Sievers, M. Albrecht, W. Schoch, N. Izyumskaya, V. Avrutin, S. Sorokin, S. Ivanov, and J. Stoimenos, “Magnetic property investigations on Mn-doped ZnO Layers on sapphire,” Appl. Phys. Lett.87(6), 062501 (2005).
[CrossRef]

Izyumskaya, N.

A. C. Mofor, A. El-Shaer, A. Bakin, A. Waag, H. Ahlers, U. Siegner, S. Sievers, M. Albrecht, W. Schoch, N. Izyumskaya, V. Avrutin, S. Sorokin, S. Ivanov, and J. Stoimenos, “Magnetic property investigations on Mn-doped ZnO Layers on sapphire,” Appl. Phys. Lett.87(6), 062501 (2005).
[CrossRef]

Jin, Z.

T. Fukumura, Z. Jin, A. Ohtomo, H. Koinuma, and M. Kawasaki, “An oxide-diluted magnetic semiconductor: Mn-doped ZnO,” Appl. Phys. Lett.75(21), 3366–3368 (1999).

Johansson, B.

P. Sharma, A. Gupta, K. V. Rao, F. J. Owens, R. Sharma, R. Ahuja, J. M. Guillen, B. Johansson, and G. A. Gehring, “Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO,” Nat. Mater.2(10), 673–677 (2003).
[CrossRef] [PubMed]

Jung, C. U.

S. W. Jung, S. J. An, G. C. Yi, C. U. Jung, S. Lee, and S. Cho, “Ferromagnetic properties of Zn1-xMnxO epitaxial thin films,” Appl. Phys. Lett.80, 4561–4563 (2002).

Jung, S. W.

S. W. Jung, S. J. An, G. C. Yi, C. U. Jung, S. Lee, and S. Cho, “Ferromagnetic properties of Zn1-xMnxO epitaxial thin films,” Appl. Phys. Lett.80, 4561–4563 (2002).

Kawasaki, M.

T. Fukumura, Z. Jin, A. Ohtomo, H. Koinuma, and M. Kawasaki, “An oxide-diluted magnetic semiconductor: Mn-doped ZnO,” Appl. Phys. Lett.75(21), 3366–3368 (1999).

Koinuma, H.

T. Fukumura, Z. Jin, A. Ohtomo, H. Koinuma, and M. Kawasaki, “An oxide-diluted magnetic semiconductor: Mn-doped ZnO,” Appl. Phys. Lett.75(21), 3366–3368 (1999).

Kondo, M.

Y. Tawada, K. Tsuge, M. Kondo, H. Okamoto, and Y. Hamakawa, “Properties and structure of aSiC:H for highefficiency aSi solar cell,” J. Appl. Phys.53(7), 5273–5281 (1982).
[CrossRef]

Lee, S.

S. W. Jung, S. J. An, G. C. Yi, C. U. Jung, S. Lee, and S. Cho, “Ferromagnetic properties of Zn1-xMnxO epitaxial thin films,” Appl. Phys. Lett.80, 4561–4563 (2002).

Lee, S. S.

Y. M. Hu, C. Y. Wang, S. S. Lee, T. C. Han, W. Y. Chou, and G. J. Chen, “Identification of Mn-related Raman modes in Mn-doped ZnO thin films,” J. Raman Spectrosc.42(3), 434–437 (2011).
[CrossRef]

Li, G. P.

H. Y. Peng, G. P. Li, J. Y. Ye, Z. P. Wei, Z. Zhang, D. D. Wang, G. Z. Xing, and T. Wu, “Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms,” Appl. Phys. Lett.96(19), 192113 (2010).
[CrossRef]

Li, Q.

Z. H. Zhang, X. F. Wang, J. B. Xu, S. Muller, C. Ronning, and Q. Li, “Evidence of intrinsic ferromagnetism in individual dilute magnetic semiconducting nanostructures,” Nat. Nanotechnol.4(8), 523–527 (2009).
[CrossRef] [PubMed]

Li, Y. M.

J. A. Anna Selvana, A. E. Delahoya, S. Guo, and Y. M. Li, “A new light trapping TCO for nc-Si:H solar cells,” Sol. Energy Mater. Sol. Cells90, 3371–3376 (2006).

Li, Z.

W. Yan, Z. Sun, Q. Liu, Z. Li, Z. Pan, J. Wang, S. Wei, D. Wang, Y. Zhou, and X. Zhang, “Zn vacancy induced room-temperature ferromagnetism in Mn-doped ZnO,” Appl. Phys. Lett.91(6), 062113 (2007).
[CrossRef]

Liu, J. L.

Z. Yang, Z. Zuo, H. M. Zhou, W. P. Beyermann, and J. L. Liu, “Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy,” J. Cryst. Growth314(1), 97–103 (2011).
[CrossRef]

Liu, Q.

W. Yan, Z. Sun, Q. Liu, Z. Li, Z. Pan, J. Wang, S. Wei, D. Wang, Y. Zhou, and X. Zhang, “Zn vacancy induced room-temperature ferromagnetism in Mn-doped ZnO,” Appl. Phys. Lett.91(6), 062113 (2007).
[CrossRef]

Lu, J.

Lucovsky, G.

G. Lucovsky, “Photoeffects in nonuniformly irradiated p-n junctions,” J. Appl. Phys.31(6), 1088–1095 (1960).
[CrossRef]

Matsukura, F.

T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, “Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors,” Science287(5455), 1019–1022 (2000).
[CrossRef] [PubMed]

Mazilkin, A. A.

B. B. Straumal, S. G. Protasova, A. A. Mazilkin, A. A. Myatiev, P. B. Straumal, G. Schütz, E. Goering, and B. Baretzky, “Ferromagnetic properties of the Mn-doped nanograined ZnO films,” J. Appl. Phys.108(7), 073923 (2010).
[CrossRef]

Mofor, A. C.

A. C. Mofor, A. El-Shaer, A. Bakin, A. Waag, H. Ahlers, U. Siegner, S. Sievers, M. Albrecht, W. Schoch, N. Izyumskaya, V. Avrutin, S. Sorokin, S. Ivanov, and J. Stoimenos, “Magnetic property investigations on Mn-doped ZnO Layers on sapphire,” Appl. Phys. Lett.87(6), 062501 (2005).
[CrossRef]

Muller, S.

Z. H. Zhang, X. F. Wang, J. B. Xu, S. Muller, C. Ronning, and Q. Li, “Evidence of intrinsic ferromagnetism in individual dilute magnetic semiconducting nanostructures,” Nat. Nanotechnol.4(8), 523–527 (2009).
[CrossRef] [PubMed]

Myatiev, A. A.

B. B. Straumal, S. G. Protasova, A. A. Mazilkin, A. A. Myatiev, P. B. Straumal, G. Schütz, E. Goering, and B. Baretzky, “Ferromagnetic properties of the Mn-doped nanograined ZnO films,” J. Appl. Phys.108(7), 073923 (2010).
[CrossRef]

Neal, J. R.

J. R. Neal, A. J. Behan, R. M. Ibrahim, H. J. Blythe, M. Ziese, A. M. Fox, and G. A. Gehring, “Room-Temperature Magneto-Optics of Ferromagnetic Transition-Metal-Doped ZnO Thin Films,” Phys. Rev. Lett.96(19), 197208 (2006).
[CrossRef] [PubMed]

Ohno, H.

T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, “Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors,” Science287(5455), 1019–1022 (2000).
[CrossRef] [PubMed]

Ohtomo, A.

T. Fukumura, Z. Jin, A. Ohtomo, H. Koinuma, and M. Kawasaki, “An oxide-diluted magnetic semiconductor: Mn-doped ZnO,” Appl. Phys. Lett.75(21), 3366–3368 (1999).

Okamoto, H.

Y. Tawada, K. Tsuge, M. Kondo, H. Okamoto, and Y. Hamakawa, “Properties and structure of aSiC:H for highefficiency aSi solar cell,” J. Appl. Phys.53(7), 5273–5281 (1982).
[CrossRef]

Owens, F. J.

P. Sharma, A. Gupta, K. V. Rao, F. J. Owens, R. Sharma, R. Ahuja, J. M. Guillen, B. Johansson, and G. A. Gehring, “Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO,” Nat. Mater.2(10), 673–677 (2003).
[CrossRef] [PubMed]

Pan, Z.

W. Yan, Z. Sun, Q. Liu, Z. Li, Z. Pan, J. Wang, S. Wei, D. Wang, Y. Zhou, and X. Zhang, “Zn vacancy induced room-temperature ferromagnetism in Mn-doped ZnO,” Appl. Phys. Lett.91(6), 062113 (2007).
[CrossRef]

Peng, H. Y.

H. Y. Peng, G. P. Li, J. Y. Ye, Z. P. Wei, Z. Zhang, D. D. Wang, G. Z. Xing, and T. Wu, “Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms,” Appl. Phys. Lett.96(19), 192113 (2010).
[CrossRef]

Phan, T.-L.

T.-L. Phan, “Structural, optical and magnetic properties of polycrystalline Zn1−xMnxO ceramics,” Solid State Commun.151(1), 24–28 (2011).
[CrossRef]

Protasova, S. G.

B. B. Straumal, S. G. Protasova, A. A. Mazilkin, A. A. Myatiev, P. B. Straumal, G. Schütz, E. Goering, and B. Baretzky, “Ferromagnetic properties of the Mn-doped nanograined ZnO films,” J. Appl. Phys.108(7), 073923 (2010).
[CrossRef]

Rao, K. V.

P. Sharma, A. Gupta, K. V. Rao, F. J. Owens, R. Sharma, R. Ahuja, J. M. Guillen, B. Johansson, and G. A. Gehring, “Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO,” Nat. Mater.2(10), 673–677 (2003).
[CrossRef] [PubMed]

Ronning, C.

Z. H. Zhang, X. F. Wang, J. B. Xu, S. Muller, C. Ronning, and Q. Li, “Evidence of intrinsic ferromagnetism in individual dilute magnetic semiconducting nanostructures,” Nat. Nanotechnol.4(8), 523–527 (2009).
[CrossRef] [PubMed]

Roukes, M. L.

S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnár, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, “Spintronics: A Spin-Based Electronics Vision for the Future,” Science294(5546), 1488–1495 (2001).
[CrossRef] [PubMed]

Schoch, W.

A. C. Mofor, A. El-Shaer, A. Bakin, A. Waag, H. Ahlers, U. Siegner, S. Sievers, M. Albrecht, W. Schoch, N. Izyumskaya, V. Avrutin, S. Sorokin, S. Ivanov, and J. Stoimenos, “Magnetic property investigations on Mn-doped ZnO Layers on sapphire,” Appl. Phys. Lett.87(6), 062501 (2005).
[CrossRef]

Schütz, G.

B. B. Straumal, S. G. Protasova, A. A. Mazilkin, A. A. Myatiev, P. B. Straumal, G. Schütz, E. Goering, and B. Baretzky, “Ferromagnetic properties of the Mn-doped nanograined ZnO films,” J. Appl. Phys.108(7), 073923 (2010).
[CrossRef]

Sharma, P.

P. Sharma, A. Gupta, K. V. Rao, F. J. Owens, R. Sharma, R. Ahuja, J. M. Guillen, B. Johansson, and G. A. Gehring, “Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO,” Nat. Mater.2(10), 673–677 (2003).
[CrossRef] [PubMed]

Sharma, R.

P. Sharma, A. Gupta, K. V. Rao, F. J. Owens, R. Sharma, R. Ahuja, J. M. Guillen, B. Johansson, and G. A. Gehring, “Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO,” Nat. Mater.2(10), 673–677 (2003).
[CrossRef] [PubMed]

Siegner, U.

A. C. Mofor, A. El-Shaer, A. Bakin, A. Waag, H. Ahlers, U. Siegner, S. Sievers, M. Albrecht, W. Schoch, N. Izyumskaya, V. Avrutin, S. Sorokin, S. Ivanov, and J. Stoimenos, “Magnetic property investigations on Mn-doped ZnO Layers on sapphire,” Appl. Phys. Lett.87(6), 062501 (2005).
[CrossRef]

Sievers, S.

A. C. Mofor, A. El-Shaer, A. Bakin, A. Waag, H. Ahlers, U. Siegner, S. Sievers, M. Albrecht, W. Schoch, N. Izyumskaya, V. Avrutin, S. Sorokin, S. Ivanov, and J. Stoimenos, “Magnetic property investigations on Mn-doped ZnO Layers on sapphire,” Appl. Phys. Lett.87(6), 062501 (2005).
[CrossRef]

Sorokin, S.

A. C. Mofor, A. El-Shaer, A. Bakin, A. Waag, H. Ahlers, U. Siegner, S. Sievers, M. Albrecht, W. Schoch, N. Izyumskaya, V. Avrutin, S. Sorokin, S. Ivanov, and J. Stoimenos, “Magnetic property investigations on Mn-doped ZnO Layers on sapphire,” Appl. Phys. Lett.87(6), 062501 (2005).
[CrossRef]

Stoimenos, J.

A. C. Mofor, A. El-Shaer, A. Bakin, A. Waag, H. Ahlers, U. Siegner, S. Sievers, M. Albrecht, W. Schoch, N. Izyumskaya, V. Avrutin, S. Sorokin, S. Ivanov, and J. Stoimenos, “Magnetic property investigations on Mn-doped ZnO Layers on sapphire,” Appl. Phys. Lett.87(6), 062501 (2005).
[CrossRef]

Straumal, B. B.

B. B. Straumal, S. G. Protasova, A. A. Mazilkin, A. A. Myatiev, P. B. Straumal, G. Schütz, E. Goering, and B. Baretzky, “Ferromagnetic properties of the Mn-doped nanograined ZnO films,” J. Appl. Phys.108(7), 073923 (2010).
[CrossRef]

Straumal, P. B.

B. B. Straumal, S. G. Protasova, A. A. Mazilkin, A. A. Myatiev, P. B. Straumal, G. Schütz, E. Goering, and B. Baretzky, “Ferromagnetic properties of the Mn-doped nanograined ZnO films,” J. Appl. Phys.108(7), 073923 (2010).
[CrossRef]

Sun, Z.

W. Yan, Z. Sun, Q. Liu, Z. Li, Z. Pan, J. Wang, S. Wei, D. Wang, Y. Zhou, and X. Zhang, “Zn vacancy induced room-temperature ferromagnetism in Mn-doped ZnO,” Appl. Phys. Lett.91(6), 062113 (2007).
[CrossRef]

Tawada, Y.

Y. Tawada, K. Tsuge, M. Kondo, H. Okamoto, and Y. Hamakawa, “Properties and structure of aSiC:H for highefficiency aSi solar cell,” J. Appl. Phys.53(7), 5273–5281 (1982).
[CrossRef]

Treger, D. M.

S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnár, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, “Spintronics: A Spin-Based Electronics Vision for the Future,” Science294(5546), 1488–1495 (2001).
[CrossRef] [PubMed]

Tsuge, K.

Y. Tawada, K. Tsuge, M. Kondo, H. Okamoto, and Y. Hamakawa, “Properties and structure of aSiC:H for highefficiency aSi solar cell,” J. Appl. Phys.53(7), 5273–5281 (1982).
[CrossRef]

von Molnár, S.

S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnár, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, “Spintronics: A Spin-Based Electronics Vision for the Future,” Science294(5546), 1488–1495 (2001).
[CrossRef] [PubMed]

Waag, A.

A. C. Mofor, A. El-Shaer, A. Bakin, A. Waag, H. Ahlers, U. Siegner, S. Sievers, M. Albrecht, W. Schoch, N. Izyumskaya, V. Avrutin, S. Sorokin, S. Ivanov, and J. Stoimenos, “Magnetic property investigations on Mn-doped ZnO Layers on sapphire,” Appl. Phys. Lett.87(6), 062501 (2005).
[CrossRef]

Wang, C. Y.

Y. M. Hu, C. Y. Wang, S. S. Lee, T. C. Han, W. Y. Chou, and G. J. Chen, “Identification of Mn-related Raman modes in Mn-doped ZnO thin films,” J. Raman Spectrosc.42(3), 434–437 (2011).
[CrossRef]

Wang, D.

W. Yan, Z. Sun, Q. Liu, Z. Li, Z. Pan, J. Wang, S. Wei, D. Wang, Y. Zhou, and X. Zhang, “Zn vacancy induced room-temperature ferromagnetism in Mn-doped ZnO,” Appl. Phys. Lett.91(6), 062113 (2007).
[CrossRef]

Wang, D. D.

H. Y. Peng, G. P. Li, J. Y. Ye, Z. P. Wei, Z. Zhang, D. D. Wang, G. Z. Xing, and T. Wu, “Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms,” Appl. Phys. Lett.96(19), 192113 (2010).
[CrossRef]

Wang, H.

Wang, J.

W. Yan, Z. Sun, Q. Liu, Z. Li, Z. Pan, J. Wang, S. Wei, D. Wang, Y. Zhou, and X. Zhang, “Zn vacancy induced room-temperature ferromagnetism in Mn-doped ZnO,” Appl. Phys. Lett.91(6), 062113 (2007).
[CrossRef]

Wang, X. F.

Z. H. Zhang, X. F. Wang, J. B. Xu, S. Muller, C. Ronning, and Q. Li, “Evidence of intrinsic ferromagnetism in individual dilute magnetic semiconducting nanostructures,” Nat. Nanotechnol.4(8), 523–527 (2009).
[CrossRef] [PubMed]

Wei, S.

W. Yan, Z. Sun, Q. Liu, Z. Li, Z. Pan, J. Wang, S. Wei, D. Wang, Y. Zhou, and X. Zhang, “Zn vacancy induced room-temperature ferromagnetism in Mn-doped ZnO,” Appl. Phys. Lett.91(6), 062113 (2007).
[CrossRef]

Wei, Z. P.

H. Y. Peng, G. P. Li, J. Y. Ye, Z. P. Wei, Z. Zhang, D. D. Wang, G. Z. Xing, and T. Wu, “Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms,” Appl. Phys. Lett.96(19), 192113 (2010).
[CrossRef]

Wolf, S. A.

S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnár, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, “Spintronics: A Spin-Based Electronics Vision for the Future,” Science294(5546), 1488–1495 (2001).
[CrossRef] [PubMed]

Wu, T.

H. Y. Peng, G. P. Li, J. Y. Ye, Z. P. Wei, Z. Zhang, D. D. Wang, G. Z. Xing, and T. Wu, “Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms,” Appl. Phys. Lett.96(19), 192113 (2010).
[CrossRef]

Xia, Y. X.

Xiao, S. Q.

Xing, G. Z.

H. Y. Peng, G. P. Li, J. Y. Ye, Z. P. Wei, Z. Zhang, D. D. Wang, G. Z. Xing, and T. Wu, “Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms,” Appl. Phys. Lett.96(19), 192113 (2010).
[CrossRef]

Xu, J. B.

Z. H. Zhang, X. F. Wang, J. B. Xu, S. Muller, C. Ronning, and Q. Li, “Evidence of intrinsic ferromagnetism in individual dilute magnetic semiconducting nanostructures,” Nat. Nanotechnol.4(8), 523–527 (2009).
[CrossRef] [PubMed]

Yan, W.

W. Yan, Z. Sun, Q. Liu, Z. Li, Z. Pan, J. Wang, S. Wei, D. Wang, Y. Zhou, and X. Zhang, “Zn vacancy induced room-temperature ferromagnetism in Mn-doped ZnO,” Appl. Phys. Lett.91(6), 062113 (2007).
[CrossRef]

Yang, Z.

Z. Yang, Z. Zuo, H. M. Zhou, W. P. Beyermann, and J. L. Liu, “Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy,” J. Cryst. Growth314(1), 97–103 (2011).
[CrossRef]

Ye, J. Y.

H. Y. Peng, G. P. Li, J. Y. Ye, Z. P. Wei, Z. Zhang, D. D. Wang, G. Z. Xing, and T. Wu, “Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms,” Appl. Phys. Lett.96(19), 192113 (2010).
[CrossRef]

Yi, G. C.

S. W. Jung, S. J. An, G. C. Yi, C. U. Jung, S. Lee, and S. Cho, “Ferromagnetic properties of Zn1-xMnxO epitaxial thin films,” Appl. Phys. Lett.80, 4561–4563 (2002).

Yu, C. Q.

Zhang, X.

W. Yan, Z. Sun, Q. Liu, Z. Li, Z. Pan, J. Wang, S. Wei, D. Wang, Y. Zhou, and X. Zhang, “Zn vacancy induced room-temperature ferromagnetism in Mn-doped ZnO,” Appl. Phys. Lett.91(6), 062113 (2007).
[CrossRef]

Zhang, Z.

H. Y. Peng, G. P. Li, J. Y. Ye, Z. P. Wei, Z. Zhang, D. D. Wang, G. Z. Xing, and T. Wu, “Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms,” Appl. Phys. Lett.96(19), 192113 (2010).
[CrossRef]

Zhang, Z. H.

Z. H. Zhang, X. F. Wang, J. B. Xu, S. Muller, C. Ronning, and Q. Li, “Evidence of intrinsic ferromagnetism in individual dilute magnetic semiconducting nanostructures,” Nat. Nanotechnol.4(8), 523–527 (2009).
[CrossRef] [PubMed]

Zhou, H. M.

Z. Yang, Z. Zuo, H. M. Zhou, W. P. Beyermann, and J. L. Liu, “Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy,” J. Cryst. Growth314(1), 97–103 (2011).
[CrossRef]

Zhou, Y.

W. Yan, Z. Sun, Q. Liu, Z. Li, Z. Pan, J. Wang, S. Wei, D. Wang, Y. Zhou, and X. Zhang, “Zn vacancy induced room-temperature ferromagnetism in Mn-doped ZnO,” Appl. Phys. Lett.91(6), 062113 (2007).
[CrossRef]

Ziese, M.

J. R. Neal, A. J. Behan, R. M. Ibrahim, H. J. Blythe, M. Ziese, A. M. Fox, and G. A. Gehring, “Room-Temperature Magneto-Optics of Ferromagnetic Transition-Metal-Doped ZnO Thin Films,” Phys. Rev. Lett.96(19), 197208 (2006).
[CrossRef] [PubMed]

Zuo, Z.

Z. Yang, Z. Zuo, H. M. Zhou, W. P. Beyermann, and J. L. Liu, “Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy,” J. Cryst. Growth314(1), 97–103 (2011).
[CrossRef]

Appl. Phys. Lett. (5)

S. W. Jung, S. J. An, G. C. Yi, C. U. Jung, S. Lee, and S. Cho, “Ferromagnetic properties of Zn1-xMnxO epitaxial thin films,” Appl. Phys. Lett.80, 4561–4563 (2002).

H. Y. Peng, G. P. Li, J. Y. Ye, Z. P. Wei, Z. Zhang, D. D. Wang, G. Z. Xing, and T. Wu, “Electrode dependence of resistive switching in Mn-doped ZnO: Filamentary versus interfacial mechanisms,” Appl. Phys. Lett.96(19), 192113 (2010).
[CrossRef]

A. C. Mofor, A. El-Shaer, A. Bakin, A. Waag, H. Ahlers, U. Siegner, S. Sievers, M. Albrecht, W. Schoch, N. Izyumskaya, V. Avrutin, S. Sorokin, S. Ivanov, and J. Stoimenos, “Magnetic property investigations on Mn-doped ZnO Layers on sapphire,” Appl. Phys. Lett.87(6), 062501 (2005).
[CrossRef]

W. Yan, Z. Sun, Q. Liu, Z. Li, Z. Pan, J. Wang, S. Wei, D. Wang, Y. Zhou, and X. Zhang, “Zn vacancy induced room-temperature ferromagnetism in Mn-doped ZnO,” Appl. Phys. Lett.91(6), 062113 (2007).
[CrossRef]

T. Fukumura, Z. Jin, A. Ohtomo, H. Koinuma, and M. Kawasaki, “An oxide-diluted magnetic semiconductor: Mn-doped ZnO,” Appl. Phys. Lett.75(21), 3366–3368 (1999).

J. Appl. Phys. (3)

G. Lucovsky, “Photoeffects in nonuniformly irradiated p-n junctions,” J. Appl. Phys.31(6), 1088–1095 (1960).
[CrossRef]

Y. Tawada, K. Tsuge, M. Kondo, H. Okamoto, and Y. Hamakawa, “Properties and structure of aSiC:H for highefficiency aSi solar cell,” J. Appl. Phys.53(7), 5273–5281 (1982).
[CrossRef]

B. B. Straumal, S. G. Protasova, A. A. Mazilkin, A. A. Myatiev, P. B. Straumal, G. Schütz, E. Goering, and B. Baretzky, “Ferromagnetic properties of the Mn-doped nanograined ZnO films,” J. Appl. Phys.108(7), 073923 (2010).
[CrossRef]

J. Cryst. Growth (1)

Z. Yang, Z. Zuo, H. M. Zhou, W. P. Beyermann, and J. L. Liu, “Epitaxial Mn-doped ZnO diluted magnetic semiconductor thin films grown by plasma-assisted molecular-beam epitaxy,” J. Cryst. Growth314(1), 97–103 (2011).
[CrossRef]

J. Raman Spectrosc. (1)

Y. M. Hu, C. Y. Wang, S. S. Lee, T. C. Han, W. Y. Chou, and G. J. Chen, “Identification of Mn-related Raman modes in Mn-doped ZnO thin films,” J. Raman Spectrosc.42(3), 434–437 (2011).
[CrossRef]

Nat. Mater. (1)

P. Sharma, A. Gupta, K. V. Rao, F. J. Owens, R. Sharma, R. Ahuja, J. M. Guillen, B. Johansson, and G. A. Gehring, “Ferromagnetism above room temperature in bulk and transparent thin films of Mn-doped ZnO,” Nat. Mater.2(10), 673–677 (2003).
[CrossRef] [PubMed]

Nat. Nanotechnol. (1)

Z. H. Zhang, X. F. Wang, J. B. Xu, S. Muller, C. Ronning, and Q. Li, “Evidence of intrinsic ferromagnetism in individual dilute magnetic semiconducting nanostructures,” Nat. Nanotechnol.4(8), 523–527 (2009).
[CrossRef] [PubMed]

Opt. Express (3)

Phys. Rev. Lett. (1)

J. R. Neal, A. J. Behan, R. M. Ibrahim, H. J. Blythe, M. Ziese, A. M. Fox, and G. A. Gehring, “Room-Temperature Magneto-Optics of Ferromagnetic Transition-Metal-Doped ZnO Thin Films,” Phys. Rev. Lett.96(19), 197208 (2006).
[CrossRef] [PubMed]

Science (2)

S. A. Wolf, D. D. Awschalom, R. A. Buhrman, J. M. Daughton, S. von Molnár, M. L. Roukes, A. Y. Chtchelkanova, and D. M. Treger, “Spintronics: A Spin-Based Electronics Vision for the Future,” Science294(5546), 1488–1495 (2001).
[CrossRef] [PubMed]

T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, “Zener Model Description of Ferromagnetism in Zinc-Blende Magnetic Semiconductors,” Science287(5455), 1019–1022 (2000).
[CrossRef] [PubMed]

Sol. Energy Mater. Sol. Cells (1)

J. A. Anna Selvana, A. E. Delahoya, S. Guo, and Y. M. Li, “A new light trapping TCO for nc-Si:H solar cells,” Sol. Energy Mater. Sol. Cells90, 3371–3376 (2006).

Solid State Commun. (1)

T.-L. Phan, “Structural, optical and magnetic properties of polycrystalline Zn1−xMnxO ceramics,” Solid State Commun.151(1), 24–28 (2011).
[CrossRef]

Cited By

OSA participates in CrossRef's Cited-By Linking service. Citing articles from OSA journals and other participating publishers are listed here.

Alert me when this article is cited.


Figures (5)

Fig. 1
Fig. 1

SEM images of Zn0.99Mn0.01O film (a) and pure ZnO film (b).

Fig. 2
Fig. 2

Optical transmission spectra of Zn0.99Mn0.01O and pure ZnO film.

Fig. 3
Fig. 3

(a) LPVs as a function of laser position in Mn-doped ZnO film under 780nm laser illumination with different optical power (b) Position sensitivity dependence on optical power at λ = 780nm.

Fig. 4
Fig. 4

(a) LPVs as a function of laser position in Mn-doped film with P = 0.1mW laser illumination of different wavelength (b) Position sensitivity dependence on wavelength at P = 0.1mW (c) LPVs as a function of laser position in Mn-doped film with P = 6mW laser illumination of different wavelength (d) Position sensitivity dependence on wavelength at P = 6mW.

Fig. 5
Fig. 5

(a) Diagram of energy absorbed in Si substrate (b) light-induced electrons all transit to Mn-doped ZnO film (c) light-induced electrons partly transit to Mn-doped ZnO film.

Equations (5)

Equations on this page are rendered with MathJax. Learn more.

n(P,ν)= Pt hν
Sensitivityκ= 2kN l 0 exp( L l 0 )
N= n λ ξ λ
κ(P,λ)= 2ktPλ ξ λ l 0 hc exp( L l 0 )
r λ =1 ξ λ

Metrics