High thermal stability of high indium content InGaN films grown by pulsed laser deposition

K. C. Shen, T. Y. Wang, D. S. Wuu, and R. H. Horng, “High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target,” Opt. Express 20(14), 15149–15156 (2012).
[Crossref] [PubMed]

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express 19(S4Suppl 4), A991–A1007 (2011).
[Crossref] [PubMed]

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98(2), 021102 (2011).
[Crossref]

Y. Guo, X. L. Liu, H. P. Song, A. L. Yang, X. Q. Xu, G. L. Zheng, H. Y. Wei, S. Y. Yang, Q. S. Zhu, and Z. G. Wang, “A study of indium incorporation in In-rich InGaN grown by MOVPE,” Appl. Surf. Sci. 256(10), 3352–3356 (2010).
[Crossref]

T. Fujii, A. Kobayashi, K. Shimomoto, J. Ohta, M. Oshima, and H. Fujioka, “Structural Characteristics of GaN/InN Heterointerfaces Fabricated at Low Temperatures by Pulsed Laser Deposition,” Appl. Phys. Express 3(2), 021003 (2010).
[Crossref]

H. Murakami, H. C. Cho, Y. Kumagai, and A. Koukitu, “Selective growth of InN on patterned GaAs(111)B substrate – influence of InN decomposition at the interface,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 7(7–8), 2019–2021 (2010).
[Crossref]

B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Single phase InxGa1−xN (0.25 ≤ x ≤ 0.63) alloys synthesized by metal organic chemical vapor deposition,” Appl. Phys. Lett. 93(18), 182107 (2008).
[Crossref]

O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, “Design and characterization of GaN/InGaN solar cells,” Appl. Phys. Lett. 91(13), 132117 (2007).
[Crossref]

E. Iliopoulos, A. Georgakilas, E. Dimakis, A. Adikimenakis, K. Tsagaraki, M. Androulidaki, and N. T. Pelekanos, “InGaN (0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy,” Phys. Status Solidi., A Appl. Mater. Sci. 203(1), 102–105 (2006).
[Crossref]

M. Hao, H. Ishikawa, and T. Egawa, “Formation chemistry of highdensity nanocraters on the surface of sapphire substrates with an in situ etching and growth mechanism of device-quality GaN films on the etched substrates,” Appl. Phys. Lett. 84(20), 4041–4043 (2004).
[Crossref]

P. Sanguino, M. Niehus, L. V. Melo, R. Schwarz, S. Koynov, T. Monteiro, J. Soares, H. Alves, and B. K. Meyer, “Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma,” Solid-State Electron. 47(3), 559–563 (2003).
[Crossref]

S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, C. H. Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31,” Appl. Phys. Lett. 83(19), 3906–3908 (2003).
[Crossref]

C. C. Chuo, M. N. Chang, F. M. Pan, C. M. Lee, and J. I. Chyi, “Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing,” Appl. Phys. Lett. 80(7), 1138–1140 (2002).
[Crossref]

J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741–4743 (2002).
[Crossref]

V. Y. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, and E. E. Haller, “Band Gap of InN and In-Rich InxGa1-xN alloys (0.36 < x < 1),” Phys. Status Solidi, B Basic Res. 230(2), R4–R6 (2002).
[Crossref]

H. K. Cho, J. Y. Lee, C. S. Kim, G. M. Yang, N. Sharma, and C. Humphreys, “Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition,” J. Cryst. Growth 231(4), 466–473 (2001).
[Crossref]

C. C. Chuo, C. M. Lee, T. E. Nee, and J. I. Chyi, “Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells,” Appl. Phys. Lett. 76(26), 3902–3904 (2000).
[Crossref]

N. A. El-Masry, E. L. Piner, S. X. Liu, and S. M. Bedair, “Phase separation in InGaN grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 72(1), 40–42 (1998).
[Crossref]

C. Stampfl and C. G. Van de Walle, “Energetics and electronic structure of stacking faults in AlN, GaN, and InN,” Phys. Rev. B 57(24), R15052–R15055 (1998).
[Crossref]

L. T. Romano, B. S. Krusor, and R. J. Molnar, “Structure of GaN films grown by hydride vapor phase epitaxy,” Appl. Phys. Lett. 71(16), 2283–2285 (1997).
[Crossref]

R. D. Vispute, V. Talyansky, R. P. Sharma, S. Choopun, M. Downes, T. Venkatesan, K. A. Jones, A. A. Iliadis, M. Asif Khan, and J. W. Yang, “Growth of epitaxial GaN films by pulsed laser deposition,” Appl. Phys. Lett. 71(1), 102–104 (1997).
[Crossref]

V. Y. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, and E. E. Haller, “Band Gap of InN and In-Rich InxGa1-xN alloys (0.36 < x < 1),” Phys. Status Solidi, B Basic Res. 230(2), R4–R6 (2002).
[Crossref]

E. Iliopoulos, A. Georgakilas, E. Dimakis, A. Adikimenakis, K. Tsagaraki, M. Androulidaki, and N. T. Pelekanos, “InGaN (0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy,” Phys. Status Solidi., A Appl. Mater. Sci. 203(1), 102–105 (2006).
[Crossref]

J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741–4743 (2002).
[Crossref]

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98(2), 021102 (2011).
[Crossref]

P. Sanguino, M. Niehus, L. V. Melo, R. Schwarz, S. Koynov, T. Monteiro, J. Soares, H. Alves, and B. K. Meyer, “Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma,” Solid-State Electron. 47(3), 559–563 (2003).
[Crossref]

E. Iliopoulos, A. Georgakilas, E. Dimakis, A. Adikimenakis, K. Tsagaraki, M. Androulidaki, and N. T. Pelekanos, “InGaN (0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy,” Phys. Status Solidi., A Appl. Mater. Sci. 203(1), 102–105 (2006).
[Crossref]

R. D. Vispute, V. Talyansky, R. P. Sharma, S. Choopun, M. Downes, T. Venkatesan, K. A. Jones, A. A. Iliadis, M. Asif Khan, and J. W. Yang, “Growth of epitaxial GaN films by pulsed laser deposition,” Appl. Phys. Lett. 71(1), 102–104 (1997).
[Crossref]

V. Y. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, and E. E. Haller, “Band Gap of InN and In-Rich InxGa1-xN alloys (0.36 < x < 1),” Phys. Status Solidi, B Basic Res. 230(2), R4–R6 (2002).
[Crossref]

N. A. El-Masry, E. L. Piner, S. X. Liu, and S. M. Bedair, “Phase separation in InGaN grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 72(1), 40–42 (1998).
[Crossref]

C. C. Chuo, M. N. Chang, F. M. Pan, C. M. Lee, and J. I. Chyi, “Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing,” Appl. Phys. Lett. 80(7), 1138–1140 (2002).
[Crossref]

S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, C. H. Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31,” Appl. Phys. Lett. 83(19), 3906–3908 (2003).
[Crossref]

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98(2), 021102 (2011).
[Crossref]

S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, C. H. Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31,” Appl. Phys. Lett. 83(19), 3906–3908 (2003).
[Crossref]

H. Murakami, H. C. Cho, Y. Kumagai, and A. Koukitu, “Selective growth of InN on patterned GaAs(111)B substrate – influence of InN decomposition at the interface,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 7(7–8), 2019–2021 (2010).
[Crossref]

H. K. Cho, J. Y. Lee, C. S. Kim, G. M. Yang, N. Sharma, and C. Humphreys, “Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition,” J. Cryst. Growth 231(4), 466–473 (2001).
[Crossref]

R. D. Vispute, V. Talyansky, R. P. Sharma, S. Choopun, M. Downes, T. Venkatesan, K. A. Jones, A. A. Iliadis, M. Asif Khan, and J. W. Yang, “Growth of epitaxial GaN films by pulsed laser deposition,” Appl. Phys. Lett. 71(1), 102–104 (1997).
[Crossref]

C. C. Chuo, M. N. Chang, F. M. Pan, C. M. Lee, and J. I. Chyi, “Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing,” Appl. Phys. Lett. 80(7), 1138–1140 (2002).
[Crossref]

C. C. Chuo, C. M. Lee, T. E. Nee, and J. I. Chyi, “Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells,” Appl. Phys. Lett. 76(26), 3902–3904 (2000).
[Crossref]

C. C. Chuo, M. N. Chang, F. M. Pan, C. M. Lee, and J. I. Chyi, “Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing,” Appl. Phys. Lett. 80(7), 1138–1140 (2002).
[Crossref]

C. C. Chuo, C. M. Lee, T. E. Nee, and J. I. Chyi, “Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells,” Appl. Phys. Lett. 76(26), 3902–3904 (2000).
[Crossref]

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98(2), 021102 (2011).
[Crossref]

V. Y. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, and E. E. Haller, “Band Gap of InN and In-Rich InxGa1-xN alloys (0.36 < x < 1),” Phys. Status Solidi, B Basic Res. 230(2), R4–R6 (2002).
[Crossref]

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98(2), 021102 (2011).
[Crossref]

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express 19(S4Suppl 4), A991–A1007 (2011).
[Crossref] [PubMed]

E. Iliopoulos, A. Georgakilas, E. Dimakis, A. Adikimenakis, K. Tsagaraki, M. Androulidaki, and N. T. Pelekanos, “InGaN (0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy,” Phys. Status Solidi., A Appl. Mater. Sci. 203(1), 102–105 (2006).
[Crossref]

R. D. Vispute, V. Talyansky, R. P. Sharma, S. Choopun, M. Downes, T. Venkatesan, K. A. Jones, A. A. Iliadis, M. Asif Khan, and J. W. Yang, “Growth of epitaxial GaN films by pulsed laser deposition,” Appl. Phys. Lett. 71(1), 102–104 (1997).
[Crossref]

M. Hao, H. Ishikawa, and T. Egawa, “Formation chemistry of highdensity nanocraters on the surface of sapphire substrates with an in situ etching and growth mechanism of device-quality GaN films on the etched substrates,” Appl. Phys. Lett. 84(20), 4041–4043 (2004).
[Crossref]

N. A. El-Masry, E. L. Piner, S. X. Liu, and S. M. Bedair, “Phase separation in InGaN grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 72(1), 40–42 (1998).
[Crossref]

V. Y. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, and E. E. Haller, “Band Gap of InN and In-Rich InxGa1-xN alloys (0.36 < x < 1),” Phys. Status Solidi, B Basic Res. 230(2), R4–R6 (2002).
[Crossref]

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98(2), 021102 (2011).
[Crossref]

S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, C. H. Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31,” Appl. Phys. Lett. 83(19), 3906–3908 (2003).
[Crossref]

O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, “Design and characterization of GaN/InGaN solar cells,” Appl. Phys. Lett. 91(13), 132117 (2007).
[Crossref]

T. Fujii, A. Kobayashi, K. Shimomoto, J. Ohta, M. Oshima, and H. Fujioka, “Structural Characteristics of GaN/InN Heterointerfaces Fabricated at Low Temperatures by Pulsed Laser Deposition,” Appl. Phys. Express 3(2), 021003 (2010).
[Crossref]

T. Fujii, A. Kobayashi, K. Shimomoto, J. Ohta, M. Oshima, and H. Fujioka, “Structural Characteristics of GaN/InN Heterointerfaces Fabricated at Low Temperatures by Pulsed Laser Deposition,” Appl. Phys. Express 3(2), 021003 (2010).
[Crossref]

V. Y. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, and E. E. Haller, “Band Gap of InN and In-Rich InxGa1-xN alloys (0.36 < x < 1),” Phys. Status Solidi, B Basic Res. 230(2), R4–R6 (2002).
[Crossref]

E. Iliopoulos, A. Georgakilas, E. Dimakis, A. Adikimenakis, K. Tsagaraki, M. Androulidaki, and N. T. Pelekanos, “InGaN (0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy,” Phys. Status Solidi., A Appl. Mater. Sci. 203(1), 102–105 (2006).
[Crossref]

V. Y. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, and E. E. Haller, “Band Gap of InN and In-Rich InxGa1-xN alloys (0.36 < x < 1),” Phys. Status Solidi, B Basic Res. 230(2), R4–R6 (2002).
[Crossref]

Y. Guo, X. L. Liu, H. P. Song, A. L. Yang, X. Q. Xu, G. L. Zheng, H. Y. Wei, S. Y. Yang, Q. S. Zhu, and Z. G. Wang, “A study of indium incorporation in In-rich InGaN grown by MOVPE,” Appl. Surf. Sci. 256(10), 3352–3356 (2010).
[Crossref]

J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741–4743 (2002).
[Crossref]

V. Y. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, and E. E. Haller, “Band Gap of InN and In-Rich InxGa1-xN alloys (0.36 < x < 1),” Phys. Status Solidi, B Basic Res. 230(2), R4–R6 (2002).
[Crossref]

M. Hao, H. Ishikawa, and T. Egawa, “Formation chemistry of highdensity nanocraters on the surface of sapphire substrates with an in situ etching and growth mechanism of device-quality GaN films on the etched substrates,” Appl. Phys. Lett. 84(20), 4041–4043 (2004).
[Crossref]

V. Y. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, and E. E. Haller, “Band Gap of InN and In-Rich InxGa1-xN alloys (0.36 < x < 1),” Phys. Status Solidi, B Basic Res. 230(2), R4–R6 (2002).
[Crossref]

V. Y. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, and E. E. Haller, “Band Gap of InN and In-Rich InxGa1-xN alloys (0.36 < x < 1),” Phys. Status Solidi, B Basic Res. 230(2), R4–R6 (2002).
[Crossref]

O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, “Design and characterization of GaN/InGaN solar cells,” Appl. Phys. Lett. 91(13), 132117 (2007).
[Crossref]

K. C. Shen, T. Y. Wang, D. S. Wuu, and R. H. Horng, “High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target,” Opt. Express 20(14), 15149–15156 (2012).
[Crossref] [PubMed]

H. K. Cho, J. Y. Lee, C. S. Kim, G. M. Yang, N. Sharma, and C. Humphreys, “Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition,” J. Cryst. Growth 231(4), 466–473 (2001).
[Crossref]

R. D. Vispute, V. Talyansky, R. P. Sharma, S. Choopun, M. Downes, T. Venkatesan, K. A. Jones, A. A. Iliadis, M. Asif Khan, and J. W. Yang, “Growth of epitaxial GaN films by pulsed laser deposition,” Appl. Phys. Lett. 71(1), 102–104 (1997).
[Crossref]

E. Iliopoulos, A. Georgakilas, E. Dimakis, A. Adikimenakis, K. Tsagaraki, M. Androulidaki, and N. T. Pelekanos, “InGaN (0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy,” Phys. Status Solidi., A Appl. Mater. Sci. 203(1), 102–105 (2006).
[Crossref]

M. Hao, H. Ishikawa, and T. Egawa, “Formation chemistry of highdensity nanocraters on the surface of sapphire substrates with an in situ etching and growth mechanism of device-quality GaN films on the etched substrates,” Appl. Phys. Lett. 84(20), 4041–4043 (2004).
[Crossref]

V. Y. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, and E. E. Haller, “Band Gap of InN and In-Rich InxGa1-xN alloys (0.36 < x < 1),” Phys. Status Solidi, B Basic Res. 230(2), R4–R6 (2002).
[Crossref]

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98(2), 021102 (2011).
[Crossref]

O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, “Design and characterization of GaN/InGaN solar cells,” Appl. Phys. Lett. 91(13), 132117 (2007).
[Crossref]

B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Single phase InxGa1−xN (0.25 ≤ x ≤ 0.63) alloys synthesized by metal organic chemical vapor deposition,” Appl. Phys. Lett. 93(18), 182107 (2008).
[Crossref]

S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, C. H. Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31,” Appl. Phys. Lett. 83(19), 3906–3908 (2003).
[Crossref]

R. D. Vispute, V. Talyansky, R. P. Sharma, S. Choopun, M. Downes, T. Venkatesan, K. A. Jones, A. A. Iliadis, M. Asif Khan, and J. W. Yang, “Growth of epitaxial GaN films by pulsed laser deposition,” Appl. Phys. Lett. 71(1), 102–104 (1997).
[Crossref]

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98(2), 021102 (2011).
[Crossref]

H. K. Cho, J. Y. Lee, C. S. Kim, G. M. Yang, N. Sharma, and C. Humphreys, “Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition,” J. Cryst. Growth 231(4), 466–473 (2001).
[Crossref]

S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, C. H. Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31,” Appl. Phys. Lett. 83(19), 3906–3908 (2003).
[Crossref]

V. Y. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, and E. E. Haller, “Band Gap of InN and In-Rich InxGa1-xN alloys (0.36 < x < 1),” Phys. Status Solidi, B Basic Res. 230(2), R4–R6 (2002).
[Crossref]

T. Fujii, A. Kobayashi, K. Shimomoto, J. Ohta, M. Oshima, and H. Fujioka, “Structural Characteristics of GaN/InN Heterointerfaces Fabricated at Low Temperatures by Pulsed Laser Deposition,” Appl. Phys. Express 3(2), 021003 (2010).
[Crossref]

H. Murakami, H. C. Cho, Y. Kumagai, and A. Koukitu, “Selective growth of InN on patterned GaAs(111)B substrate – influence of InN decomposition at the interface,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 7(7–8), 2019–2021 (2010).
[Crossref]

P. Sanguino, M. Niehus, L. V. Melo, R. Schwarz, S. Koynov, T. Monteiro, J. Soares, H. Alves, and B. K. Meyer, “Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma,” Solid-State Electron. 47(3), 559–563 (2003).
[Crossref]

L. T. Romano, B. S. Krusor, and R. J. Molnar, “Structure of GaN films grown by hydride vapor phase epitaxy,” Appl. Phys. Lett. 71(16), 2283–2285 (1997).
[Crossref]

H. Murakami, H. C. Cho, Y. Kumagai, and A. Koukitu, “Selective growth of InN on patterned GaAs(111)B substrate – influence of InN decomposition at the interface,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 7(7–8), 2019–2021 (2010).
[Crossref]

O. Jani, I. Ferguson, C. Honsberg, and S. Kurtz, “Design and characterization of GaN/InGaN solar cells,” Appl. Phys. Lett. 91(13), 132117 (2007).
[Crossref]

C. C. Chuo, M. N. Chang, F. M. Pan, C. M. Lee, and J. I. Chyi, “Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing,” Appl. Phys. Lett. 80(7), 1138–1140 (2002).
[Crossref]

C. C. Chuo, C. M. Lee, T. E. Nee, and J. I. Chyi, “Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells,” Appl. Phys. Lett. 76(26), 3902–3904 (2000).
[Crossref]

H. K. Cho, J. Y. Lee, C. S. Kim, G. M. Yang, N. Sharma, and C. Humphreys, “Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition,” J. Cryst. Growth 231(4), 466–473 (2001).
[Crossref]

B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Single phase InxGa1−xN (0.25 ≤ x ≤ 0.63) alloys synthesized by metal organic chemical vapor deposition,” Appl. Phys. Lett. 93(18), 182107 (2008).
[Crossref]

S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, C. H. Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31,” Appl. Phys. Lett. 83(19), 3906–3908 (2003).
[Crossref]

B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Single phase InxGa1−xN (0.25 ≤ x ≤ 0.63) alloys synthesized by metal organic chemical vapor deposition,” Appl. Phys. Lett. 93(18), 182107 (2008).
[Crossref]

S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, C. H. Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31,” Appl. Phys. Lett. 83(19), 3906–3908 (2003).
[Crossref]

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express 19(S4Suppl 4), A991–A1007 (2011).
[Crossref] [PubMed]

N. A. El-Masry, E. L. Piner, S. X. Liu, and S. M. Bedair, “Phase separation in InGaN grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 72(1), 40–42 (1998).
[Crossref]

Y. Guo, X. L. Liu, H. P. Song, A. L. Yang, X. Q. Xu, G. L. Zheng, H. Y. Wei, S. Y. Yang, Q. S. Zhu, and Z. G. Wang, “A study of indium incorporation in In-rich InGaN grown by MOVPE,” Appl. Surf. Sci. 256(10), 3352–3356 (2010).
[Crossref]

J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741–4743 (2002).
[Crossref]

S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, C. H. Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31,” Appl. Phys. Lett. 83(19), 3906–3908 (2003).
[Crossref]

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98(2), 021102 (2011).
[Crossref]

P. Sanguino, M. Niehus, L. V. Melo, R. Schwarz, S. Koynov, T. Monteiro, J. Soares, H. Alves, and B. K. Meyer, “Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma,” Solid-State Electron. 47(3), 559–563 (2003).
[Crossref]

P. Sanguino, M. Niehus, L. V. Melo, R. Schwarz, S. Koynov, T. Monteiro, J. Soares, H. Alves, and B. K. Meyer, “Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma,” Solid-State Electron. 47(3), 559–563 (2003).
[Crossref]

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98(2), 021102 (2011).
[Crossref]

L. T. Romano, B. S. Krusor, and R. J. Molnar, “Structure of GaN films grown by hydride vapor phase epitaxy,” Appl. Phys. Lett. 71(16), 2283–2285 (1997).
[Crossref]

P. Sanguino, M. Niehus, L. V. Melo, R. Schwarz, S. Koynov, T. Monteiro, J. Soares, H. Alves, and B. K. Meyer, “Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma,” Solid-State Electron. 47(3), 559–563 (2003).
[Crossref]

V. Y. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, and E. E. Haller, “Band Gap of InN and In-Rich InxGa1-xN alloys (0.36 < x < 1),” Phys. Status Solidi, B Basic Res. 230(2), R4–R6 (2002).
[Crossref]

H. Murakami, H. C. Cho, Y. Kumagai, and A. Koukitu, “Selective growth of InN on patterned GaAs(111)B substrate – influence of InN decomposition at the interface,” Phys. Status Solidi., C Curr. Top. Solid State Phys. 7(7–8), 2019–2021 (2010).
[Crossref]

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98(2), 021102 (2011).
[Crossref]

C. C. Chuo, C. M. Lee, T. E. Nee, and J. I. Chyi, “Effects of thermal annealing on the luminescence and structural properties of high indium-content InGaN/GaN quantum wells,” Appl. Phys. Lett. 76(26), 3902–3904 (2000).
[Crossref]

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98(2), 021102 (2011).
[Crossref]

P. Sanguino, M. Niehus, L. V. Melo, R. Schwarz, S. Koynov, T. Monteiro, J. Soares, H. Alves, and B. K. Meyer, “Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma,” Solid-State Electron. 47(3), 559–563 (2003).
[Crossref]

T. Fujii, A. Kobayashi, K. Shimomoto, J. Ohta, M. Oshima, and H. Fujioka, “Structural Characteristics of GaN/InN Heterointerfaces Fabricated at Low Temperatures by Pulsed Laser Deposition,” Appl. Phys. Express 3(2), 021003 (2010).
[Crossref]

T. Fujii, A. Kobayashi, K. Shimomoto, J. Ohta, M. Oshima, and H. Fujioka, “Structural Characteristics of GaN/InN Heterointerfaces Fabricated at Low Temperatures by Pulsed Laser Deposition,” Appl. Phys. Express 3(2), 021003 (2010).
[Crossref]

C. C. Chuo, M. N. Chang, F. M. Pan, C. M. Lee, and J. I. Chyi, “Effect of composition inhomogeneity on the photoluminescence of InGaN/GaN multiple quantum wells upon thermal annealing,” Appl. Phys. Lett. 80(7), 1138–1140 (2002).
[Crossref]

B. N. Pantha, J. Li, J. Y. Lin, and H. X. Jiang, “Single phase InxGa1−xN (0.25 ≤ x ≤ 0.63) alloys synthesized by metal organic chemical vapor deposition,” Appl. Phys. Lett. 93(18), 182107 (2008).
[Crossref]

E. Iliopoulos, A. Georgakilas, E. Dimakis, A. Adikimenakis, K. Tsagaraki, M. Androulidaki, and N. T. Pelekanos, “InGaN (0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy,” Phys. Status Solidi., A Appl. Mater. Sci. 203(1), 102–105 (2006).
[Crossref]

N. A. El-Masry, E. L. Piner, S. X. Liu, and S. M. Bedair, “Phase separation in InGaN grown by metalorganic chemical vapor deposition,” Appl. Phys. Lett. 72(1), 40–42 (1998).
[Crossref]

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express 19(S4Suppl 4), A991–A1007 (2011).
[Crossref] [PubMed]

L. T. Romano, B. S. Krusor, and R. J. Molnar, “Structure of GaN films grown by hydride vapor phase epitaxy,” Appl. Phys. Lett. 71(16), 2283–2285 (1997).
[Crossref]

P. Sanguino, M. Niehus, L. V. Melo, R. Schwarz, S. Koynov, T. Monteiro, J. Soares, H. Alves, and B. K. Meyer, “Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma,” Solid-State Electron. 47(3), 559–563 (2003).
[Crossref]

J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741–4743 (2002).
[Crossref]

P. Sanguino, M. Niehus, L. V. Melo, R. Schwarz, S. Koynov, T. Monteiro, J. Soares, H. Alves, and B. K. Meyer, “Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma,” Solid-State Electron. 47(3), 559–563 (2003).
[Crossref]

H. K. Cho, J. Y. Lee, C. S. Kim, G. M. Yang, N. Sharma, and C. Humphreys, “Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition,” J. Cryst. Growth 231(4), 466–473 (2001).
[Crossref]

R. D. Vispute, V. Talyansky, R. P. Sharma, S. Choopun, M. Downes, T. Venkatesan, K. A. Jones, A. A. Iliadis, M. Asif Khan, and J. W. Yang, “Growth of epitaxial GaN films by pulsed laser deposition,” Appl. Phys. Lett. 71(1), 102–104 (1997).
[Crossref]

S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, C. H. Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31,” Appl. Phys. Lett. 83(19), 3906–3908 (2003).
[Crossref]

K. C. Shen, T. Y. Wang, D. S. Wuu, and R. H. Horng, “High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target,” Opt. Express 20(14), 15149–15156 (2012).
[Crossref] [PubMed]

T. Fujii, A. Kobayashi, K. Shimomoto, J. Ohta, M. Oshima, and H. Fujioka, “Structural Characteristics of GaN/InN Heterointerfaces Fabricated at Low Temperatures by Pulsed Laser Deposition,” Appl. Phys. Express 3(2), 021003 (2010).
[Crossref]

P. Sanguino, M. Niehus, L. V. Melo, R. Schwarz, S. Koynov, T. Monteiro, J. Soares, H. Alves, and B. K. Meyer, “Characterisation of GaN films grown on sapphire by low-temperature cyclic pulsed laser deposition/nitrogen rf plasma,” Solid-State Electron. 47(3), 559–563 (2003).
[Crossref]

Y. Guo, X. L. Liu, H. P. Song, A. L. Yang, X. Q. Xu, G. L. Zheng, H. Y. Wei, S. Y. Yang, Q. S. Zhu, and Z. G. Wang, “A study of indium incorporation in In-rich InGaN grown by MOVPE,” Appl. Surf. Sci. 256(10), 3352–3356 (2010).
[Crossref]

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98(2), 021102 (2011).
[Crossref]

C. Stampfl and C. G. Van de Walle, “Energetics and electronic structure of stacking faults in AlN, GaN, and InN,” Phys. Rev. B 57(24), R15052–R15055 (1998).
[Crossref]

R. D. Vispute, V. Talyansky, R. P. Sharma, S. Choopun, M. Downes, T. Venkatesan, K. A. Jones, A. A. Iliadis, M. Asif Khan, and J. W. Yang, “Growth of epitaxial GaN films by pulsed laser deposition,” Appl. Phys. Lett. 71(1), 102–104 (1997).
[Crossref]

S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, C. H. Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31,” Appl. Phys. Lett. 83(19), 3906–3908 (2003).
[Crossref]

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express 19(S4Suppl 4), A991–A1007 (2011).
[Crossref] [PubMed]

E. Iliopoulos, A. Georgakilas, E. Dimakis, A. Adikimenakis, K. Tsagaraki, M. Androulidaki, and N. T. Pelekanos, “InGaN (0001) alloys grown in the entire composition range by plasma assisted molecular beam epitaxy,” Phys. Status Solidi., A Appl. Mater. Sci. 203(1), 102–105 (2006).
[Crossref]

C. Stampfl and C. G. Van de Walle, “Energetics and electronic structure of stacking faults in AlN, GaN, and InN,” Phys. Rev. B 57(24), R15052–R15055 (1998).
[Crossref]

V. Y. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, and E. E. Haller, “Band Gap of InN and In-Rich InxGa1-xN alloys (0.36 < x < 1),” Phys. Status Solidi, B Basic Res. 230(2), R4–R6 (2002).
[Crossref]

R. D. Vispute, V. Talyansky, R. P. Sharma, S. Choopun, M. Downes, T. Venkatesan, K. A. Jones, A. A. Iliadis, M. Asif Khan, and J. W. Yang, “Growth of epitaxial GaN films by pulsed laser deposition,” Appl. Phys. Lett. 71(1), 102–104 (1997).
[Crossref]

R. D. Vispute, V. Talyansky, R. P. Sharma, S. Choopun, M. Downes, T. Venkatesan, K. A. Jones, A. A. Iliadis, M. Asif Khan, and J. W. Yang, “Growth of epitaxial GaN films by pulsed laser deposition,” Appl. Phys. Lett. 71(1), 102–104 (1997).
[Crossref]

J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741–4743 (2002).
[Crossref]

S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, C. H. Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31,” Appl. Phys. Lett. 83(19), 3906–3908 (2003).
[Crossref]

K. C. Shen, T. Y. Wang, D. S. Wuu, and R. H. Horng, “High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target,” Opt. Express 20(14), 15149–15156 (2012).
[Crossref] [PubMed]

Y. Guo, X. L. Liu, H. P. Song, A. L. Yang, X. Q. Xu, G. L. Zheng, H. Y. Wei, S. Y. Yang, Q. S. Zhu, and Z. G. Wang, “A study of indium incorporation in In-rich InGaN grown by MOVPE,” Appl. Surf. Sci. 256(10), 3352–3356 (2010).
[Crossref]

Y. Guo, X. L. Liu, H. P. Song, A. L. Yang, X. Q. Xu, G. L. Zheng, H. Y. Wei, S. Y. Yang, Q. S. Zhu, and Z. G. Wang, “A study of indium incorporation in In-rich InGaN grown by MOVPE,” Appl. Surf. Sci. 256(10), 3352–3356 (2010).
[Crossref]

E. Matioli, C. Neufeld, M. Iza, S. C. Cruz, A. A. Al-Heji, X. Chen, R. M. Farrell, S. Keller, S. DenBaars, U. Mishra, S. Nakamura, J. Speck, and C. Weisbuch, “High internal and external quantum efficiency InGaN/GaN solar cells,” Appl. Phys. Lett. 98(2), 021102 (2011).
[Crossref]

J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741–4743 (2002).
[Crossref]

K. C. Shen, T. Y. Wang, D. S. Wuu, and R. H. Horng, “High indium content InGaN films grown by pulsed laser deposition using a dual-compositing target,” Opt. Express 20(14), 15149–15156 (2012).
[Crossref] [PubMed]

Y. Guo, X. L. Liu, H. P. Song, A. L. Yang, X. Q. Xu, G. L. Zheng, H. Y. Wei, S. Y. Yang, Q. S. Zhu, and Z. G. Wang, “A study of indium incorporation in In-rich InGaN grown by MOVPE,” Appl. Surf. Sci. 256(10), 3352–3356 (2010).
[Crossref]

V. Y. Davydov, A. A. Klochikhin, V. V. Emtsev, S. V. Ivanov, V. V. Vekshin, F. Bechstedt, J. Furthmuller, H. Harima, A. V. Mudryi, A. Hashimoto, A. Yamamoto, J. Aderhold, J. Graul, and E. E. Haller, “Band Gap of InN and In-Rich InxGa1-xN alloys (0.36 < x < 1),” Phys. Status Solidi, B Basic Res. 230(2), R4–R6 (2002).
[Crossref]

Y. Guo, X. L. Liu, H. P. Song, A. L. Yang, X. Q. Xu, G. L. Zheng, H. Y. Wei, S. Y. Yang, Q. S. Zhu, and Z. G. Wang, “A study of indium incorporation in In-rich InGaN grown by MOVPE,” Appl. Surf. Sci. 256(10), 3352–3356 (2010).
[Crossref]

S. W. Feng, E. C. Lin, T. Y. Tang, Y. C. Cheng, H. C. Wang, C. C. Yang, K. J. Ma, C. H. Shen, L. C. Chen, K. H. Kim, J. Y. Lin, and H. X. Jiang, “Thermal annealing effects on an InGaN film with an average indium mole fraction of 0.31,” Appl. Phys. Lett. 83(19), 3906–3908 (2003).
[Crossref]

H. K. Cho, J. Y. Lee, C. S. Kim, G. M. Yang, N. Sharma, and C. Humphreys, “Microstructural characterization of InGaN/GaN multiple quantum wells with high indium composition,” J. Cryst. Growth 231(4), 466–473 (2001).
[Crossref]

R. D. Vispute, V. Talyansky, R. P. Sharma, S. Choopun, M. Downes, T. Venkatesan, K. A. Jones, A. A. Iliadis, M. Asif Khan, and J. W. Yang, “Growth of epitaxial GaN films by pulsed laser deposition,” Appl. Phys. Lett. 71(1), 102–104 (1997).
[Crossref]

Y. Guo, X. L. Liu, H. P. Song, A. L. Yang, X. Q. Xu, G. L. Zheng, H. Y. Wei, S. Y. Yang, Q. S. Zhu, and Z. G. Wang, “A study of indium incorporation in In-rich InGaN grown by MOVPE,” Appl. Surf. Sci. 256(10), 3352–3356 (2010).
[Crossref]

J. Wu, W. Walukiewicz, K. M. Yu, J. W. Ager, E. E. Haller, H. Lu, and W. J. Schaff, “Small band gap bowing in In1−xGaxN alloys,” Appl. Phys. Lett. 80(25), 4741–4743 (2002).
[Crossref]

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express 19(S4Suppl 4), A991–A1007 (2011).
[Crossref] [PubMed]

H. Zhao, G. Liu, J. Zhang, J. D. Poplawsky, V. Dierolf, and N. Tansu, “Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells,” Opt. Express 19(S4Suppl 4), A991–A1007 (2011).
[Crossref] [PubMed]

Y. Guo, X. L. Liu, H. P. Song, A. L. Yang, X. Q. Xu, G. L. Zheng, H. Y. Wei, S. Y. Yang, Q. S. Zhu, and Z. G. Wang, “A study of indium incorporation in In-rich InGaN grown by MOVPE,” Appl. Surf. Sci. 256(10), 3352–3356 (2010).
[Crossref]

Y. Guo, X. L. Liu, H. P. Song, A. L. Yang, X. Q. Xu, G. L. Zheng, H. Y. Wei, S. Y. Yang, Q. S. Zhu, and Z. G. Wang, “A study of indium incorporation in In-rich InGaN grown by MOVPE,” Appl. Surf. Sci. 256(10), 3352–3356 (2010).
[Crossref]

T. Fujii, A. Kobayashi, K. Shimomoto, J. Ohta, M. Oshima, and H. Fujioka, “Structural Characteristics of GaN/InN Heterointerfaces Fabricated at Low Temperatures by Pulsed Laser Deposition,” Appl. Phys. Express 3(2), 021003 (2010).
[Crossref]

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[Crossref]

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