Abstract

We present the observation and analysis of long-lived exciton in individual InAs quantum dots (QDs). The general model considering the interplay between dark and bright states reveals the two key factors responsible for the long decay time: the shortened spin-flip time at elevated temperature and the imbalanced initial populations between the dark and bright states. The later one plays a key role in the unusual phenomena and leads to the possibility of spin-dependent relaxation process in QDs.

© 2012 OSA

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  1. D. J. Mowbray and M. S. Skolnick, “New physics and devices based on self-assembled semiconductor quantum dots,” J. Phys. D Appl. Phys.38(13), 2059–2076 (2005).
    [CrossRef]
  2. A. J. Ramsay, “A review of the coherent optical control of the exciton and spin states of semiconductor quantum dots,” Semicond. Sci. Technol.25(10), 103001 (2010).
    [CrossRef]
  3. C. H. Wu, Y. G. Lin, S. L. Tyan, S. D. Lin, and C. P. Lee, “An investigation of quantum states in ultra-small InAs-GaAs quantum dots by means of photoluminescence,” Chin. J. Physiol.43, 847–855 (2005).
  4. A. Imamoḡlu, D. D. Awschalom, G. Burkard, D. P. DiVincenzo, D. Loss, M. Sherwin, and A. Small, “Quantum information processing using quantum dot spins and cavity QED,” Phys. Rev. Lett.83(20), 4204–4207 (1999).
    [CrossRef]
  5. O. Labeau, P. Tamarat, and B. Lounis, “Temperature dependence of the luminescence lifetime of single CdSe/ZnS quantum dots,” Phys. Rev. Lett.90(25), 257404 (2003).
    [CrossRef] [PubMed]
  6. J. M. Smith, P. A. Dalgarno, R. J. Warburton, A. O. Govorov, K. Karrai, B. D. Gerardot, and P. M. Petroff, “Voltage control of the spin dynamics of an exciton in a semiconductor quantum dot,” Phys. Rev. Lett.94(19), 197402 (2005).
    [CrossRef] [PubMed]
  7. M. Bayer, G. Ortner, O. Stern, A. Kuther, A. A. Gorbunov, A. Forchel, P. Hawrylak, S. Fafard, K. Hinzer, T. L. Reinecke, S. N. Walck, J. P. Reithmaier, F. Klopf, and F. Schäfer, “Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots,” Phys. Rev. B65(19), 195315 (2002).
    [CrossRef]
  8. T. Kümmell, S. V. Zaitsev, A. Gust, C. Kruse, D. Hommel, and G. Bacher, “Radiative recombination in photoexcited quantum dots up to room temperature: the role of fine-structure effects,” Phys. Rev. B81(24), 241306 (2010).
    [CrossRef]
  9. J. Johansen, B. Julsgaard, S. Stobbe, J. M. Hvam, and P. Lodahl, “Probing long-lived dark excitons in self-assembled quantum dots,” Phys. Rev. B81(8), 081304 (2010).
    [CrossRef]
  10. C. Cheng, S. D. Lin, C. H. Pan, C. H. Lin, and Y. J. Fu, “Observation of long-lived excitons in InAs quantum dots under thermal redistribution temperature,” Phys. Lett. A376(17), 1495–1498 (2012).
    [CrossRef]
  11. W. Yang, R. R. Lowe-Webb, H. Lee, and P. C. Sercel, “Effect of carrier emission and retrapping on luminescence time decays in InAs-GaAs quantum dots,” Phys. Rev. B56(20), 13314–13320 (1997).
    [CrossRef]
  12. S. Sanguinetti, M. Henini, M. Grassi Alessi, M. Capizzi, P. Frigeri, and S. Franchi, “Carrier thermal escape and retrapping in self-assembled quantum dots,” Phys. Rev. B60(11), 8276–8283 (1999).
    [CrossRef]
  13. G. Wang, S. Fafard, D. Leonard, J. E. Bowers, J. L. Merz, and P. M. Petroff, “Time-resolved optical characterization of InGaAs/GaAs quantum dots,” Appl. Phys. Lett.64(21), 2815–2817 (1994).
    [CrossRef]
  14. D. I. Lubyshev, P. P. Gonzalez-Borrero, E. Marega, E. Petitprez, N. La Scala, and P. Basmaji, “Exciton localization and temperature stability in self-organized InAs quantum dots,” Appl. Phys. Lett.68(2), 205–207 (1996).
    [CrossRef]
  15. H. Yu, S. Lycett, C. Roberts, and R. Murray, “Time resolved study of self-assembled InAs quantum dots,” Appl. Phys. Lett.69(26), 4087–4089 (1996).
    [CrossRef]
  16. C. H. Lin, H. S. Lin, C. C. Huang, S. K. Su, S. D. Lin, K. W. Sun, C. P. Lee, Y. K. Liu, M. D. Yang, and J. L. Shen, “Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring,” Appl. Phys. Lett.94(18), 183101 (2009).
    [CrossRef]
  17. M. Paillard, X. Marie, P. Renucci, T. Amand, A. Jbeli, and J. M. Gérard, “Spin relaxation quenching in semiconductor quantum dots,” Phys. Rev. Lett.86(8), 1634–1637 (2001).
    [CrossRef] [PubMed]
  18. Y. H. Liao, J. I. Climente, and S. J. Cheng, “Dominant channels of exciton spin relaxation in photoexcited self-assembled (In,Ga)As quantum dots,” Phys. Rev. B83(16), 165317 (2011).
    [CrossRef]
  19. B. Patton, W. Langbein, and U. Woggon, “Trion, biexciton, and exciton dynamics in single self-assembled CdSe quantum dots,” Phys. Rev. B68(12), 125316 (2003).
    [CrossRef]
  20. G. A. Narvaez, G. Bester, A. Franceschetti, and A. Zunger, “Excitonic exchange effects on the radiative decay time of monoexcitons and biexcitons in quantum dots,” Phys. Rev. B74(20), 205422 (2006).
    [CrossRef]
  21. P. Maletinsky, C. W. Lai, A. Badolato, and A. Imamoḡlu, “Nonlinear dynamics of quantum dot nuclear spins,” Phys. Rev. B75(3), 035409 (2007).
    [CrossRef]

2012

C. Cheng, S. D. Lin, C. H. Pan, C. H. Lin, and Y. J. Fu, “Observation of long-lived excitons in InAs quantum dots under thermal redistribution temperature,” Phys. Lett. A376(17), 1495–1498 (2012).
[CrossRef]

2011

Y. H. Liao, J. I. Climente, and S. J. Cheng, “Dominant channels of exciton spin relaxation in photoexcited self-assembled (In,Ga)As quantum dots,” Phys. Rev. B83(16), 165317 (2011).
[CrossRef]

2010

A. J. Ramsay, “A review of the coherent optical control of the exciton and spin states of semiconductor quantum dots,” Semicond. Sci. Technol.25(10), 103001 (2010).
[CrossRef]

T. Kümmell, S. V. Zaitsev, A. Gust, C. Kruse, D. Hommel, and G. Bacher, “Radiative recombination in photoexcited quantum dots up to room temperature: the role of fine-structure effects,” Phys. Rev. B81(24), 241306 (2010).
[CrossRef]

J. Johansen, B. Julsgaard, S. Stobbe, J. M. Hvam, and P. Lodahl, “Probing long-lived dark excitons in self-assembled quantum dots,” Phys. Rev. B81(8), 081304 (2010).
[CrossRef]

2009

C. H. Lin, H. S. Lin, C. C. Huang, S. K. Su, S. D. Lin, K. W. Sun, C. P. Lee, Y. K. Liu, M. D. Yang, and J. L. Shen, “Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring,” Appl. Phys. Lett.94(18), 183101 (2009).
[CrossRef]

2007

P. Maletinsky, C. W. Lai, A. Badolato, and A. Imamoḡlu, “Nonlinear dynamics of quantum dot nuclear spins,” Phys. Rev. B75(3), 035409 (2007).
[CrossRef]

2006

G. A. Narvaez, G. Bester, A. Franceschetti, and A. Zunger, “Excitonic exchange effects on the radiative decay time of monoexcitons and biexcitons in quantum dots,” Phys. Rev. B74(20), 205422 (2006).
[CrossRef]

2005

J. M. Smith, P. A. Dalgarno, R. J. Warburton, A. O. Govorov, K. Karrai, B. D. Gerardot, and P. M. Petroff, “Voltage control of the spin dynamics of an exciton in a semiconductor quantum dot,” Phys. Rev. Lett.94(19), 197402 (2005).
[CrossRef] [PubMed]

C. H. Wu, Y. G. Lin, S. L. Tyan, S. D. Lin, and C. P. Lee, “An investigation of quantum states in ultra-small InAs-GaAs quantum dots by means of photoluminescence,” Chin. J. Physiol.43, 847–855 (2005).

D. J. Mowbray and M. S. Skolnick, “New physics and devices based on self-assembled semiconductor quantum dots,” J. Phys. D Appl. Phys.38(13), 2059–2076 (2005).
[CrossRef]

2003

O. Labeau, P. Tamarat, and B. Lounis, “Temperature dependence of the luminescence lifetime of single CdSe/ZnS quantum dots,” Phys. Rev. Lett.90(25), 257404 (2003).
[CrossRef] [PubMed]

B. Patton, W. Langbein, and U. Woggon, “Trion, biexciton, and exciton dynamics in single self-assembled CdSe quantum dots,” Phys. Rev. B68(12), 125316 (2003).
[CrossRef]

2002

M. Bayer, G. Ortner, O. Stern, A. Kuther, A. A. Gorbunov, A. Forchel, P. Hawrylak, S. Fafard, K. Hinzer, T. L. Reinecke, S. N. Walck, J. P. Reithmaier, F. Klopf, and F. Schäfer, “Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots,” Phys. Rev. B65(19), 195315 (2002).
[CrossRef]

2001

M. Paillard, X. Marie, P. Renucci, T. Amand, A. Jbeli, and J. M. Gérard, “Spin relaxation quenching in semiconductor quantum dots,” Phys. Rev. Lett.86(8), 1634–1637 (2001).
[CrossRef] [PubMed]

1999

S. Sanguinetti, M. Henini, M. Grassi Alessi, M. Capizzi, P. Frigeri, and S. Franchi, “Carrier thermal escape and retrapping in self-assembled quantum dots,” Phys. Rev. B60(11), 8276–8283 (1999).
[CrossRef]

A. Imamoḡlu, D. D. Awschalom, G. Burkard, D. P. DiVincenzo, D. Loss, M. Sherwin, and A. Small, “Quantum information processing using quantum dot spins and cavity QED,” Phys. Rev. Lett.83(20), 4204–4207 (1999).
[CrossRef]

1997

W. Yang, R. R. Lowe-Webb, H. Lee, and P. C. Sercel, “Effect of carrier emission and retrapping on luminescence time decays in InAs-GaAs quantum dots,” Phys. Rev. B56(20), 13314–13320 (1997).
[CrossRef]

1996

D. I. Lubyshev, P. P. Gonzalez-Borrero, E. Marega, E. Petitprez, N. La Scala, and P. Basmaji, “Exciton localization and temperature stability in self-organized InAs quantum dots,” Appl. Phys. Lett.68(2), 205–207 (1996).
[CrossRef]

H. Yu, S. Lycett, C. Roberts, and R. Murray, “Time resolved study of self-assembled InAs quantum dots,” Appl. Phys. Lett.69(26), 4087–4089 (1996).
[CrossRef]

1994

G. Wang, S. Fafard, D. Leonard, J. E. Bowers, J. L. Merz, and P. M. Petroff, “Time-resolved optical characterization of InGaAs/GaAs quantum dots,” Appl. Phys. Lett.64(21), 2815–2817 (1994).
[CrossRef]

Amand, T.

M. Paillard, X. Marie, P. Renucci, T. Amand, A. Jbeli, and J. M. Gérard, “Spin relaxation quenching in semiconductor quantum dots,” Phys. Rev. Lett.86(8), 1634–1637 (2001).
[CrossRef] [PubMed]

Awschalom, D. D.

A. Imamoḡlu, D. D. Awschalom, G. Burkard, D. P. DiVincenzo, D. Loss, M. Sherwin, and A. Small, “Quantum information processing using quantum dot spins and cavity QED,” Phys. Rev. Lett.83(20), 4204–4207 (1999).
[CrossRef]

Bacher, G.

T. Kümmell, S. V. Zaitsev, A. Gust, C. Kruse, D. Hommel, and G. Bacher, “Radiative recombination in photoexcited quantum dots up to room temperature: the role of fine-structure effects,” Phys. Rev. B81(24), 241306 (2010).
[CrossRef]

Badolato, A.

P. Maletinsky, C. W. Lai, A. Badolato, and A. Imamoḡlu, “Nonlinear dynamics of quantum dot nuclear spins,” Phys. Rev. B75(3), 035409 (2007).
[CrossRef]

Basmaji, P.

D. I. Lubyshev, P. P. Gonzalez-Borrero, E. Marega, E. Petitprez, N. La Scala, and P. Basmaji, “Exciton localization and temperature stability in self-organized InAs quantum dots,” Appl. Phys. Lett.68(2), 205–207 (1996).
[CrossRef]

Bayer, M.

M. Bayer, G. Ortner, O. Stern, A. Kuther, A. A. Gorbunov, A. Forchel, P. Hawrylak, S. Fafard, K. Hinzer, T. L. Reinecke, S. N. Walck, J. P. Reithmaier, F. Klopf, and F. Schäfer, “Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots,” Phys. Rev. B65(19), 195315 (2002).
[CrossRef]

Bester, G.

G. A. Narvaez, G. Bester, A. Franceschetti, and A. Zunger, “Excitonic exchange effects on the radiative decay time of monoexcitons and biexcitons in quantum dots,” Phys. Rev. B74(20), 205422 (2006).
[CrossRef]

Bowers, J. E.

G. Wang, S. Fafard, D. Leonard, J. E. Bowers, J. L. Merz, and P. M. Petroff, “Time-resolved optical characterization of InGaAs/GaAs quantum dots,” Appl. Phys. Lett.64(21), 2815–2817 (1994).
[CrossRef]

Burkard, G.

A. Imamoḡlu, D. D. Awschalom, G. Burkard, D. P. DiVincenzo, D. Loss, M. Sherwin, and A. Small, “Quantum information processing using quantum dot spins and cavity QED,” Phys. Rev. Lett.83(20), 4204–4207 (1999).
[CrossRef]

Capizzi, M.

S. Sanguinetti, M. Henini, M. Grassi Alessi, M. Capizzi, P. Frigeri, and S. Franchi, “Carrier thermal escape and retrapping in self-assembled quantum dots,” Phys. Rev. B60(11), 8276–8283 (1999).
[CrossRef]

Cheng, C.

C. Cheng, S. D. Lin, C. H. Pan, C. H. Lin, and Y. J. Fu, “Observation of long-lived excitons in InAs quantum dots under thermal redistribution temperature,” Phys. Lett. A376(17), 1495–1498 (2012).
[CrossRef]

Cheng, S. J.

Y. H. Liao, J. I. Climente, and S. J. Cheng, “Dominant channels of exciton spin relaxation in photoexcited self-assembled (In,Ga)As quantum dots,” Phys. Rev. B83(16), 165317 (2011).
[CrossRef]

Climente, J. I.

Y. H. Liao, J. I. Climente, and S. J. Cheng, “Dominant channels of exciton spin relaxation in photoexcited self-assembled (In,Ga)As quantum dots,” Phys. Rev. B83(16), 165317 (2011).
[CrossRef]

Dalgarno, P. A.

J. M. Smith, P. A. Dalgarno, R. J. Warburton, A. O. Govorov, K. Karrai, B. D. Gerardot, and P. M. Petroff, “Voltage control of the spin dynamics of an exciton in a semiconductor quantum dot,” Phys. Rev. Lett.94(19), 197402 (2005).
[CrossRef] [PubMed]

DiVincenzo, D. P.

A. Imamoḡlu, D. D. Awschalom, G. Burkard, D. P. DiVincenzo, D. Loss, M. Sherwin, and A. Small, “Quantum information processing using quantum dot spins and cavity QED,” Phys. Rev. Lett.83(20), 4204–4207 (1999).
[CrossRef]

Fafard, S.

M. Bayer, G. Ortner, O. Stern, A. Kuther, A. A. Gorbunov, A. Forchel, P. Hawrylak, S. Fafard, K. Hinzer, T. L. Reinecke, S. N. Walck, J. P. Reithmaier, F. Klopf, and F. Schäfer, “Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots,” Phys. Rev. B65(19), 195315 (2002).
[CrossRef]

G. Wang, S. Fafard, D. Leonard, J. E. Bowers, J. L. Merz, and P. M. Petroff, “Time-resolved optical characterization of InGaAs/GaAs quantum dots,” Appl. Phys. Lett.64(21), 2815–2817 (1994).
[CrossRef]

Forchel, A.

M. Bayer, G. Ortner, O. Stern, A. Kuther, A. A. Gorbunov, A. Forchel, P. Hawrylak, S. Fafard, K. Hinzer, T. L. Reinecke, S. N. Walck, J. P. Reithmaier, F. Klopf, and F. Schäfer, “Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots,” Phys. Rev. B65(19), 195315 (2002).
[CrossRef]

Franceschetti, A.

G. A. Narvaez, G. Bester, A. Franceschetti, and A. Zunger, “Excitonic exchange effects on the radiative decay time of monoexcitons and biexcitons in quantum dots,” Phys. Rev. B74(20), 205422 (2006).
[CrossRef]

Franchi, S.

S. Sanguinetti, M. Henini, M. Grassi Alessi, M. Capizzi, P. Frigeri, and S. Franchi, “Carrier thermal escape and retrapping in self-assembled quantum dots,” Phys. Rev. B60(11), 8276–8283 (1999).
[CrossRef]

Frigeri, P.

S. Sanguinetti, M. Henini, M. Grassi Alessi, M. Capizzi, P. Frigeri, and S. Franchi, “Carrier thermal escape and retrapping in self-assembled quantum dots,” Phys. Rev. B60(11), 8276–8283 (1999).
[CrossRef]

Fu, Y. J.

C. Cheng, S. D. Lin, C. H. Pan, C. H. Lin, and Y. J. Fu, “Observation of long-lived excitons in InAs quantum dots under thermal redistribution temperature,” Phys. Lett. A376(17), 1495–1498 (2012).
[CrossRef]

Gérard, J. M.

M. Paillard, X. Marie, P. Renucci, T. Amand, A. Jbeli, and J. M. Gérard, “Spin relaxation quenching in semiconductor quantum dots,” Phys. Rev. Lett.86(8), 1634–1637 (2001).
[CrossRef] [PubMed]

Gerardot, B. D.

J. M. Smith, P. A. Dalgarno, R. J. Warburton, A. O. Govorov, K. Karrai, B. D. Gerardot, and P. M. Petroff, “Voltage control of the spin dynamics of an exciton in a semiconductor quantum dot,” Phys. Rev. Lett.94(19), 197402 (2005).
[CrossRef] [PubMed]

Gonzalez-Borrero, P. P.

D. I. Lubyshev, P. P. Gonzalez-Borrero, E. Marega, E. Petitprez, N. La Scala, and P. Basmaji, “Exciton localization and temperature stability in self-organized InAs quantum dots,” Appl. Phys. Lett.68(2), 205–207 (1996).
[CrossRef]

Gorbunov, A. A.

M. Bayer, G. Ortner, O. Stern, A. Kuther, A. A. Gorbunov, A. Forchel, P. Hawrylak, S. Fafard, K. Hinzer, T. L. Reinecke, S. N. Walck, J. P. Reithmaier, F. Klopf, and F. Schäfer, “Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots,” Phys. Rev. B65(19), 195315 (2002).
[CrossRef]

Govorov, A. O.

J. M. Smith, P. A. Dalgarno, R. J. Warburton, A. O. Govorov, K. Karrai, B. D. Gerardot, and P. M. Petroff, “Voltage control of the spin dynamics of an exciton in a semiconductor quantum dot,” Phys. Rev. Lett.94(19), 197402 (2005).
[CrossRef] [PubMed]

Grassi Alessi, M.

S. Sanguinetti, M. Henini, M. Grassi Alessi, M. Capizzi, P. Frigeri, and S. Franchi, “Carrier thermal escape and retrapping in self-assembled quantum dots,” Phys. Rev. B60(11), 8276–8283 (1999).
[CrossRef]

Gust, A.

T. Kümmell, S. V. Zaitsev, A. Gust, C. Kruse, D. Hommel, and G. Bacher, “Radiative recombination in photoexcited quantum dots up to room temperature: the role of fine-structure effects,” Phys. Rev. B81(24), 241306 (2010).
[CrossRef]

Hawrylak, P.

M. Bayer, G. Ortner, O. Stern, A. Kuther, A. A. Gorbunov, A. Forchel, P. Hawrylak, S. Fafard, K. Hinzer, T. L. Reinecke, S. N. Walck, J. P. Reithmaier, F. Klopf, and F. Schäfer, “Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots,” Phys. Rev. B65(19), 195315 (2002).
[CrossRef]

Henini, M.

S. Sanguinetti, M. Henini, M. Grassi Alessi, M. Capizzi, P. Frigeri, and S. Franchi, “Carrier thermal escape and retrapping in self-assembled quantum dots,” Phys. Rev. B60(11), 8276–8283 (1999).
[CrossRef]

Hinzer, K.

M. Bayer, G. Ortner, O. Stern, A. Kuther, A. A. Gorbunov, A. Forchel, P. Hawrylak, S. Fafard, K. Hinzer, T. L. Reinecke, S. N. Walck, J. P. Reithmaier, F. Klopf, and F. Schäfer, “Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots,” Phys. Rev. B65(19), 195315 (2002).
[CrossRef]

Hommel, D.

T. Kümmell, S. V. Zaitsev, A. Gust, C. Kruse, D. Hommel, and G. Bacher, “Radiative recombination in photoexcited quantum dots up to room temperature: the role of fine-structure effects,” Phys. Rev. B81(24), 241306 (2010).
[CrossRef]

Huang, C. C.

C. H. Lin, H. S. Lin, C. C. Huang, S. K. Su, S. D. Lin, K. W. Sun, C. P. Lee, Y. K. Liu, M. D. Yang, and J. L. Shen, “Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring,” Appl. Phys. Lett.94(18), 183101 (2009).
[CrossRef]

Hvam, J. M.

J. Johansen, B. Julsgaard, S. Stobbe, J. M. Hvam, and P. Lodahl, “Probing long-lived dark excitons in self-assembled quantum dots,” Phys. Rev. B81(8), 081304 (2010).
[CrossRef]

Imamo?lu, A.

P. Maletinsky, C. W. Lai, A. Badolato, and A. Imamoḡlu, “Nonlinear dynamics of quantum dot nuclear spins,” Phys. Rev. B75(3), 035409 (2007).
[CrossRef]

A. Imamoḡlu, D. D. Awschalom, G. Burkard, D. P. DiVincenzo, D. Loss, M. Sherwin, and A. Small, “Quantum information processing using quantum dot spins and cavity QED,” Phys. Rev. Lett.83(20), 4204–4207 (1999).
[CrossRef]

Jbeli, A.

M. Paillard, X. Marie, P. Renucci, T. Amand, A. Jbeli, and J. M. Gérard, “Spin relaxation quenching in semiconductor quantum dots,” Phys. Rev. Lett.86(8), 1634–1637 (2001).
[CrossRef] [PubMed]

Johansen, J.

J. Johansen, B. Julsgaard, S. Stobbe, J. M. Hvam, and P. Lodahl, “Probing long-lived dark excitons in self-assembled quantum dots,” Phys. Rev. B81(8), 081304 (2010).
[CrossRef]

Julsgaard, B.

J. Johansen, B. Julsgaard, S. Stobbe, J. M. Hvam, and P. Lodahl, “Probing long-lived dark excitons in self-assembled quantum dots,” Phys. Rev. B81(8), 081304 (2010).
[CrossRef]

Karrai, K.

J. M. Smith, P. A. Dalgarno, R. J. Warburton, A. O. Govorov, K. Karrai, B. D. Gerardot, and P. M. Petroff, “Voltage control of the spin dynamics of an exciton in a semiconductor quantum dot,” Phys. Rev. Lett.94(19), 197402 (2005).
[CrossRef] [PubMed]

Klopf, F.

M. Bayer, G. Ortner, O. Stern, A. Kuther, A. A. Gorbunov, A. Forchel, P. Hawrylak, S. Fafard, K. Hinzer, T. L. Reinecke, S. N. Walck, J. P. Reithmaier, F. Klopf, and F. Schäfer, “Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots,” Phys. Rev. B65(19), 195315 (2002).
[CrossRef]

Kruse, C.

T. Kümmell, S. V. Zaitsev, A. Gust, C. Kruse, D. Hommel, and G. Bacher, “Radiative recombination in photoexcited quantum dots up to room temperature: the role of fine-structure effects,” Phys. Rev. B81(24), 241306 (2010).
[CrossRef]

Kümmell, T.

T. Kümmell, S. V. Zaitsev, A. Gust, C. Kruse, D. Hommel, and G. Bacher, “Radiative recombination in photoexcited quantum dots up to room temperature: the role of fine-structure effects,” Phys. Rev. B81(24), 241306 (2010).
[CrossRef]

Kuther, A.

M. Bayer, G. Ortner, O. Stern, A. Kuther, A. A. Gorbunov, A. Forchel, P. Hawrylak, S. Fafard, K. Hinzer, T. L. Reinecke, S. N. Walck, J. P. Reithmaier, F. Klopf, and F. Schäfer, “Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots,” Phys. Rev. B65(19), 195315 (2002).
[CrossRef]

La Scala, N.

D. I. Lubyshev, P. P. Gonzalez-Borrero, E. Marega, E. Petitprez, N. La Scala, and P. Basmaji, “Exciton localization and temperature stability in self-organized InAs quantum dots,” Appl. Phys. Lett.68(2), 205–207 (1996).
[CrossRef]

Labeau, O.

O. Labeau, P. Tamarat, and B. Lounis, “Temperature dependence of the luminescence lifetime of single CdSe/ZnS quantum dots,” Phys. Rev. Lett.90(25), 257404 (2003).
[CrossRef] [PubMed]

Lai, C. W.

P. Maletinsky, C. W. Lai, A. Badolato, and A. Imamoḡlu, “Nonlinear dynamics of quantum dot nuclear spins,” Phys. Rev. B75(3), 035409 (2007).
[CrossRef]

Langbein, W.

B. Patton, W. Langbein, and U. Woggon, “Trion, biexciton, and exciton dynamics in single self-assembled CdSe quantum dots,” Phys. Rev. B68(12), 125316 (2003).
[CrossRef]

Lee, C. P.

C. H. Lin, H. S. Lin, C. C. Huang, S. K. Su, S. D. Lin, K. W. Sun, C. P. Lee, Y. K. Liu, M. D. Yang, and J. L. Shen, “Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring,” Appl. Phys. Lett.94(18), 183101 (2009).
[CrossRef]

C. H. Wu, Y. G. Lin, S. L. Tyan, S. D. Lin, and C. P. Lee, “An investigation of quantum states in ultra-small InAs-GaAs quantum dots by means of photoluminescence,” Chin. J. Physiol.43, 847–855 (2005).

Lee, H.

W. Yang, R. R. Lowe-Webb, H. Lee, and P. C. Sercel, “Effect of carrier emission and retrapping on luminescence time decays in InAs-GaAs quantum dots,” Phys. Rev. B56(20), 13314–13320 (1997).
[CrossRef]

Leonard, D.

G. Wang, S. Fafard, D. Leonard, J. E. Bowers, J. L. Merz, and P. M. Petroff, “Time-resolved optical characterization of InGaAs/GaAs quantum dots,” Appl. Phys. Lett.64(21), 2815–2817 (1994).
[CrossRef]

Liao, Y. H.

Y. H. Liao, J. I. Climente, and S. J. Cheng, “Dominant channels of exciton spin relaxation in photoexcited self-assembled (In,Ga)As quantum dots,” Phys. Rev. B83(16), 165317 (2011).
[CrossRef]

Lin, C. H.

C. Cheng, S. D. Lin, C. H. Pan, C. H. Lin, and Y. J. Fu, “Observation of long-lived excitons in InAs quantum dots under thermal redistribution temperature,” Phys. Lett. A376(17), 1495–1498 (2012).
[CrossRef]

C. H. Lin, H. S. Lin, C. C. Huang, S. K. Su, S. D. Lin, K. W. Sun, C. P. Lee, Y. K. Liu, M. D. Yang, and J. L. Shen, “Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring,” Appl. Phys. Lett.94(18), 183101 (2009).
[CrossRef]

Lin, H. S.

C. H. Lin, H. S. Lin, C. C. Huang, S. K. Su, S. D. Lin, K. W. Sun, C. P. Lee, Y. K. Liu, M. D. Yang, and J. L. Shen, “Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring,” Appl. Phys. Lett.94(18), 183101 (2009).
[CrossRef]

Lin, S. D.

C. Cheng, S. D. Lin, C. H. Pan, C. H. Lin, and Y. J. Fu, “Observation of long-lived excitons in InAs quantum dots under thermal redistribution temperature,” Phys. Lett. A376(17), 1495–1498 (2012).
[CrossRef]

C. H. Lin, H. S. Lin, C. C. Huang, S. K. Su, S. D. Lin, K. W. Sun, C. P. Lee, Y. K. Liu, M. D. Yang, and J. L. Shen, “Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring,” Appl. Phys. Lett.94(18), 183101 (2009).
[CrossRef]

C. H. Wu, Y. G. Lin, S. L. Tyan, S. D. Lin, and C. P. Lee, “An investigation of quantum states in ultra-small InAs-GaAs quantum dots by means of photoluminescence,” Chin. J. Physiol.43, 847–855 (2005).

Lin, Y. G.

C. H. Wu, Y. G. Lin, S. L. Tyan, S. D. Lin, and C. P. Lee, “An investigation of quantum states in ultra-small InAs-GaAs quantum dots by means of photoluminescence,” Chin. J. Physiol.43, 847–855 (2005).

Liu, Y. K.

C. H. Lin, H. S. Lin, C. C. Huang, S. K. Su, S. D. Lin, K. W. Sun, C. P. Lee, Y. K. Liu, M. D. Yang, and J. L. Shen, “Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring,” Appl. Phys. Lett.94(18), 183101 (2009).
[CrossRef]

Lodahl, P.

J. Johansen, B. Julsgaard, S. Stobbe, J. M. Hvam, and P. Lodahl, “Probing long-lived dark excitons in self-assembled quantum dots,” Phys. Rev. B81(8), 081304 (2010).
[CrossRef]

Loss, D.

A. Imamoḡlu, D. D. Awschalom, G. Burkard, D. P. DiVincenzo, D. Loss, M. Sherwin, and A. Small, “Quantum information processing using quantum dot spins and cavity QED,” Phys. Rev. Lett.83(20), 4204–4207 (1999).
[CrossRef]

Lounis, B.

O. Labeau, P. Tamarat, and B. Lounis, “Temperature dependence of the luminescence lifetime of single CdSe/ZnS quantum dots,” Phys. Rev. Lett.90(25), 257404 (2003).
[CrossRef] [PubMed]

Lowe-Webb, R. R.

W. Yang, R. R. Lowe-Webb, H. Lee, and P. C. Sercel, “Effect of carrier emission and retrapping on luminescence time decays in InAs-GaAs quantum dots,” Phys. Rev. B56(20), 13314–13320 (1997).
[CrossRef]

Lubyshev, D. I.

D. I. Lubyshev, P. P. Gonzalez-Borrero, E. Marega, E. Petitprez, N. La Scala, and P. Basmaji, “Exciton localization and temperature stability in self-organized InAs quantum dots,” Appl. Phys. Lett.68(2), 205–207 (1996).
[CrossRef]

Lycett, S.

H. Yu, S. Lycett, C. Roberts, and R. Murray, “Time resolved study of self-assembled InAs quantum dots,” Appl. Phys. Lett.69(26), 4087–4089 (1996).
[CrossRef]

Maletinsky, P.

P. Maletinsky, C. W. Lai, A. Badolato, and A. Imamoḡlu, “Nonlinear dynamics of quantum dot nuclear spins,” Phys. Rev. B75(3), 035409 (2007).
[CrossRef]

Marega, E.

D. I. Lubyshev, P. P. Gonzalez-Borrero, E. Marega, E. Petitprez, N. La Scala, and P. Basmaji, “Exciton localization and temperature stability in self-organized InAs quantum dots,” Appl. Phys. Lett.68(2), 205–207 (1996).
[CrossRef]

Marie, X.

M. Paillard, X. Marie, P. Renucci, T. Amand, A. Jbeli, and J. M. Gérard, “Spin relaxation quenching in semiconductor quantum dots,” Phys. Rev. Lett.86(8), 1634–1637 (2001).
[CrossRef] [PubMed]

Merz, J. L.

G. Wang, S. Fafard, D. Leonard, J. E. Bowers, J. L. Merz, and P. M. Petroff, “Time-resolved optical characterization of InGaAs/GaAs quantum dots,” Appl. Phys. Lett.64(21), 2815–2817 (1994).
[CrossRef]

Mowbray, D. J.

D. J. Mowbray and M. S. Skolnick, “New physics and devices based on self-assembled semiconductor quantum dots,” J. Phys. D Appl. Phys.38(13), 2059–2076 (2005).
[CrossRef]

Murray, R.

H. Yu, S. Lycett, C. Roberts, and R. Murray, “Time resolved study of self-assembled InAs quantum dots,” Appl. Phys. Lett.69(26), 4087–4089 (1996).
[CrossRef]

Narvaez, G. A.

G. A. Narvaez, G. Bester, A. Franceschetti, and A. Zunger, “Excitonic exchange effects on the radiative decay time of monoexcitons and biexcitons in quantum dots,” Phys. Rev. B74(20), 205422 (2006).
[CrossRef]

Ortner, G.

M. Bayer, G. Ortner, O. Stern, A. Kuther, A. A. Gorbunov, A. Forchel, P. Hawrylak, S. Fafard, K. Hinzer, T. L. Reinecke, S. N. Walck, J. P. Reithmaier, F. Klopf, and F. Schäfer, “Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots,” Phys. Rev. B65(19), 195315 (2002).
[CrossRef]

Paillard, M.

M. Paillard, X. Marie, P. Renucci, T. Amand, A. Jbeli, and J. M. Gérard, “Spin relaxation quenching in semiconductor quantum dots,” Phys. Rev. Lett.86(8), 1634–1637 (2001).
[CrossRef] [PubMed]

Pan, C. H.

C. Cheng, S. D. Lin, C. H. Pan, C. H. Lin, and Y. J. Fu, “Observation of long-lived excitons in InAs quantum dots under thermal redistribution temperature,” Phys. Lett. A376(17), 1495–1498 (2012).
[CrossRef]

Patton, B.

B. Patton, W. Langbein, and U. Woggon, “Trion, biexciton, and exciton dynamics in single self-assembled CdSe quantum dots,” Phys. Rev. B68(12), 125316 (2003).
[CrossRef]

Petitprez, E.

D. I. Lubyshev, P. P. Gonzalez-Borrero, E. Marega, E. Petitprez, N. La Scala, and P. Basmaji, “Exciton localization and temperature stability in self-organized InAs quantum dots,” Appl. Phys. Lett.68(2), 205–207 (1996).
[CrossRef]

Petroff, P. M.

J. M. Smith, P. A. Dalgarno, R. J. Warburton, A. O. Govorov, K. Karrai, B. D. Gerardot, and P. M. Petroff, “Voltage control of the spin dynamics of an exciton in a semiconductor quantum dot,” Phys. Rev. Lett.94(19), 197402 (2005).
[CrossRef] [PubMed]

G. Wang, S. Fafard, D. Leonard, J. E. Bowers, J. L. Merz, and P. M. Petroff, “Time-resolved optical characterization of InGaAs/GaAs quantum dots,” Appl. Phys. Lett.64(21), 2815–2817 (1994).
[CrossRef]

Ramsay, A. J.

A. J. Ramsay, “A review of the coherent optical control of the exciton and spin states of semiconductor quantum dots,” Semicond. Sci. Technol.25(10), 103001 (2010).
[CrossRef]

Reinecke, T. L.

M. Bayer, G. Ortner, O. Stern, A. Kuther, A. A. Gorbunov, A. Forchel, P. Hawrylak, S. Fafard, K. Hinzer, T. L. Reinecke, S. N. Walck, J. P. Reithmaier, F. Klopf, and F. Schäfer, “Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots,” Phys. Rev. B65(19), 195315 (2002).
[CrossRef]

Reithmaier, J. P.

M. Bayer, G. Ortner, O. Stern, A. Kuther, A. A. Gorbunov, A. Forchel, P. Hawrylak, S. Fafard, K. Hinzer, T. L. Reinecke, S. N. Walck, J. P. Reithmaier, F. Klopf, and F. Schäfer, “Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots,” Phys. Rev. B65(19), 195315 (2002).
[CrossRef]

Renucci, P.

M. Paillard, X. Marie, P. Renucci, T. Amand, A. Jbeli, and J. M. Gérard, “Spin relaxation quenching in semiconductor quantum dots,” Phys. Rev. Lett.86(8), 1634–1637 (2001).
[CrossRef] [PubMed]

Roberts, C.

H. Yu, S. Lycett, C. Roberts, and R. Murray, “Time resolved study of self-assembled InAs quantum dots,” Appl. Phys. Lett.69(26), 4087–4089 (1996).
[CrossRef]

Sanguinetti, S.

S. Sanguinetti, M. Henini, M. Grassi Alessi, M. Capizzi, P. Frigeri, and S. Franchi, “Carrier thermal escape and retrapping in self-assembled quantum dots,” Phys. Rev. B60(11), 8276–8283 (1999).
[CrossRef]

Schäfer, F.

M. Bayer, G. Ortner, O. Stern, A. Kuther, A. A. Gorbunov, A. Forchel, P. Hawrylak, S. Fafard, K. Hinzer, T. L. Reinecke, S. N. Walck, J. P. Reithmaier, F. Klopf, and F. Schäfer, “Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots,” Phys. Rev. B65(19), 195315 (2002).
[CrossRef]

Sercel, P. C.

W. Yang, R. R. Lowe-Webb, H. Lee, and P. C. Sercel, “Effect of carrier emission and retrapping on luminescence time decays in InAs-GaAs quantum dots,” Phys. Rev. B56(20), 13314–13320 (1997).
[CrossRef]

Shen, J. L.

C. H. Lin, H. S. Lin, C. C. Huang, S. K. Su, S. D. Lin, K. W. Sun, C. P. Lee, Y. K. Liu, M. D. Yang, and J. L. Shen, “Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring,” Appl. Phys. Lett.94(18), 183101 (2009).
[CrossRef]

Sherwin, M.

A. Imamoḡlu, D. D. Awschalom, G. Burkard, D. P. DiVincenzo, D. Loss, M. Sherwin, and A. Small, “Quantum information processing using quantum dot spins and cavity QED,” Phys. Rev. Lett.83(20), 4204–4207 (1999).
[CrossRef]

Skolnick, M. S.

D. J. Mowbray and M. S. Skolnick, “New physics and devices based on self-assembled semiconductor quantum dots,” J. Phys. D Appl. Phys.38(13), 2059–2076 (2005).
[CrossRef]

Small, A.

A. Imamoḡlu, D. D. Awschalom, G. Burkard, D. P. DiVincenzo, D. Loss, M. Sherwin, and A. Small, “Quantum information processing using quantum dot spins and cavity QED,” Phys. Rev. Lett.83(20), 4204–4207 (1999).
[CrossRef]

Smith, J. M.

J. M. Smith, P. A. Dalgarno, R. J. Warburton, A. O. Govorov, K. Karrai, B. D. Gerardot, and P. M. Petroff, “Voltage control of the spin dynamics of an exciton in a semiconductor quantum dot,” Phys. Rev. Lett.94(19), 197402 (2005).
[CrossRef] [PubMed]

Stern, O.

M. Bayer, G. Ortner, O. Stern, A. Kuther, A. A. Gorbunov, A. Forchel, P. Hawrylak, S. Fafard, K. Hinzer, T. L. Reinecke, S. N. Walck, J. P. Reithmaier, F. Klopf, and F. Schäfer, “Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots,” Phys. Rev. B65(19), 195315 (2002).
[CrossRef]

Stobbe, S.

J. Johansen, B. Julsgaard, S. Stobbe, J. M. Hvam, and P. Lodahl, “Probing long-lived dark excitons in self-assembled quantum dots,” Phys. Rev. B81(8), 081304 (2010).
[CrossRef]

Su, S. K.

C. H. Lin, H. S. Lin, C. C. Huang, S. K. Su, S. D. Lin, K. W. Sun, C. P. Lee, Y. K. Liu, M. D. Yang, and J. L. Shen, “Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring,” Appl. Phys. Lett.94(18), 183101 (2009).
[CrossRef]

Sun, K. W.

C. H. Lin, H. S. Lin, C. C. Huang, S. K. Su, S. D. Lin, K. W. Sun, C. P. Lee, Y. K. Liu, M. D. Yang, and J. L. Shen, “Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring,” Appl. Phys. Lett.94(18), 183101 (2009).
[CrossRef]

Tamarat, P.

O. Labeau, P. Tamarat, and B. Lounis, “Temperature dependence of the luminescence lifetime of single CdSe/ZnS quantum dots,” Phys. Rev. Lett.90(25), 257404 (2003).
[CrossRef] [PubMed]

Tyan, S. L.

C. H. Wu, Y. G. Lin, S. L. Tyan, S. D. Lin, and C. P. Lee, “An investigation of quantum states in ultra-small InAs-GaAs quantum dots by means of photoluminescence,” Chin. J. Physiol.43, 847–855 (2005).

Walck, S. N.

M. Bayer, G. Ortner, O. Stern, A. Kuther, A. A. Gorbunov, A. Forchel, P. Hawrylak, S. Fafard, K. Hinzer, T. L. Reinecke, S. N. Walck, J. P. Reithmaier, F. Klopf, and F. Schäfer, “Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots,” Phys. Rev. B65(19), 195315 (2002).
[CrossRef]

Wang, G.

G. Wang, S. Fafard, D. Leonard, J. E. Bowers, J. L. Merz, and P. M. Petroff, “Time-resolved optical characterization of InGaAs/GaAs quantum dots,” Appl. Phys. Lett.64(21), 2815–2817 (1994).
[CrossRef]

Warburton, R. J.

J. M. Smith, P. A. Dalgarno, R. J. Warburton, A. O. Govorov, K. Karrai, B. D. Gerardot, and P. M. Petroff, “Voltage control of the spin dynamics of an exciton in a semiconductor quantum dot,” Phys. Rev. Lett.94(19), 197402 (2005).
[CrossRef] [PubMed]

Woggon, U.

B. Patton, W. Langbein, and U. Woggon, “Trion, biexciton, and exciton dynamics in single self-assembled CdSe quantum dots,” Phys. Rev. B68(12), 125316 (2003).
[CrossRef]

Wu, C. H.

C. H. Wu, Y. G. Lin, S. L. Tyan, S. D. Lin, and C. P. Lee, “An investigation of quantum states in ultra-small InAs-GaAs quantum dots by means of photoluminescence,” Chin. J. Physiol.43, 847–855 (2005).

Yang, M. D.

C. H. Lin, H. S. Lin, C. C. Huang, S. K. Su, S. D. Lin, K. W. Sun, C. P. Lee, Y. K. Liu, M. D. Yang, and J. L. Shen, “Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring,” Appl. Phys. Lett.94(18), 183101 (2009).
[CrossRef]

Yang, W.

W. Yang, R. R. Lowe-Webb, H. Lee, and P. C. Sercel, “Effect of carrier emission and retrapping on luminescence time decays in InAs-GaAs quantum dots,” Phys. Rev. B56(20), 13314–13320 (1997).
[CrossRef]

Yu, H.

H. Yu, S. Lycett, C. Roberts, and R. Murray, “Time resolved study of self-assembled InAs quantum dots,” Appl. Phys. Lett.69(26), 4087–4089 (1996).
[CrossRef]

Zaitsev, S. V.

T. Kümmell, S. V. Zaitsev, A. Gust, C. Kruse, D. Hommel, and G. Bacher, “Radiative recombination in photoexcited quantum dots up to room temperature: the role of fine-structure effects,” Phys. Rev. B81(24), 241306 (2010).
[CrossRef]

Zunger, A.

G. A. Narvaez, G. Bester, A. Franceschetti, and A. Zunger, “Excitonic exchange effects on the radiative decay time of monoexcitons and biexcitons in quantum dots,” Phys. Rev. B74(20), 205422 (2006).
[CrossRef]

Appl. Phys. Lett.

G. Wang, S. Fafard, D. Leonard, J. E. Bowers, J. L. Merz, and P. M. Petroff, “Time-resolved optical characterization of InGaAs/GaAs quantum dots,” Appl. Phys. Lett.64(21), 2815–2817 (1994).
[CrossRef]

D. I. Lubyshev, P. P. Gonzalez-Borrero, E. Marega, E. Petitprez, N. La Scala, and P. Basmaji, “Exciton localization and temperature stability in self-organized InAs quantum dots,” Appl. Phys. Lett.68(2), 205–207 (1996).
[CrossRef]

H. Yu, S. Lycett, C. Roberts, and R. Murray, “Time resolved study of self-assembled InAs quantum dots,” Appl. Phys. Lett.69(26), 4087–4089 (1996).
[CrossRef]

C. H. Lin, H. S. Lin, C. C. Huang, S. K. Su, S. D. Lin, K. W. Sun, C. P. Lee, Y. K. Liu, M. D. Yang, and J. L. Shen, “Temperature dependence of time-resolved photoluminescence spectroscopy in InAs/GaAs quantum ring,” Appl. Phys. Lett.94(18), 183101 (2009).
[CrossRef]

Chin. J. Physiol.

C. H. Wu, Y. G. Lin, S. L. Tyan, S. D. Lin, and C. P. Lee, “An investigation of quantum states in ultra-small InAs-GaAs quantum dots by means of photoluminescence,” Chin. J. Physiol.43, 847–855 (2005).

J. Phys. D Appl. Phys.

D. J. Mowbray and M. S. Skolnick, “New physics and devices based on self-assembled semiconductor quantum dots,” J. Phys. D Appl. Phys.38(13), 2059–2076 (2005).
[CrossRef]

Phys. Lett. A

C. Cheng, S. D. Lin, C. H. Pan, C. H. Lin, and Y. J. Fu, “Observation of long-lived excitons in InAs quantum dots under thermal redistribution temperature,” Phys. Lett. A376(17), 1495–1498 (2012).
[CrossRef]

Phys. Rev. B

W. Yang, R. R. Lowe-Webb, H. Lee, and P. C. Sercel, “Effect of carrier emission and retrapping on luminescence time decays in InAs-GaAs quantum dots,” Phys. Rev. B56(20), 13314–13320 (1997).
[CrossRef]

S. Sanguinetti, M. Henini, M. Grassi Alessi, M. Capizzi, P. Frigeri, and S. Franchi, “Carrier thermal escape and retrapping in self-assembled quantum dots,” Phys. Rev. B60(11), 8276–8283 (1999).
[CrossRef]

M. Bayer, G. Ortner, O. Stern, A. Kuther, A. A. Gorbunov, A. Forchel, P. Hawrylak, S. Fafard, K. Hinzer, T. L. Reinecke, S. N. Walck, J. P. Reithmaier, F. Klopf, and F. Schäfer, “Fine structure of neutral and charged excitons in self-assembled In(Ga)As/(Al)GaAs quantum dots,” Phys. Rev. B65(19), 195315 (2002).
[CrossRef]

T. Kümmell, S. V. Zaitsev, A. Gust, C. Kruse, D. Hommel, and G. Bacher, “Radiative recombination in photoexcited quantum dots up to room temperature: the role of fine-structure effects,” Phys. Rev. B81(24), 241306 (2010).
[CrossRef]

J. Johansen, B. Julsgaard, S. Stobbe, J. M. Hvam, and P. Lodahl, “Probing long-lived dark excitons in self-assembled quantum dots,” Phys. Rev. B81(8), 081304 (2010).
[CrossRef]

Y. H. Liao, J. I. Climente, and S. J. Cheng, “Dominant channels of exciton spin relaxation in photoexcited self-assembled (In,Ga)As quantum dots,” Phys. Rev. B83(16), 165317 (2011).
[CrossRef]

B. Patton, W. Langbein, and U. Woggon, “Trion, biexciton, and exciton dynamics in single self-assembled CdSe quantum dots,” Phys. Rev. B68(12), 125316 (2003).
[CrossRef]

G. A. Narvaez, G. Bester, A. Franceschetti, and A. Zunger, “Excitonic exchange effects on the radiative decay time of monoexcitons and biexcitons in quantum dots,” Phys. Rev. B74(20), 205422 (2006).
[CrossRef]

P. Maletinsky, C. W. Lai, A. Badolato, and A. Imamoḡlu, “Nonlinear dynamics of quantum dot nuclear spins,” Phys. Rev. B75(3), 035409 (2007).
[CrossRef]

Phys. Rev. Lett.

M. Paillard, X. Marie, P. Renucci, T. Amand, A. Jbeli, and J. M. Gérard, “Spin relaxation quenching in semiconductor quantum dots,” Phys. Rev. Lett.86(8), 1634–1637 (2001).
[CrossRef] [PubMed]

A. Imamoḡlu, D. D. Awschalom, G. Burkard, D. P. DiVincenzo, D. Loss, M. Sherwin, and A. Small, “Quantum information processing using quantum dot spins and cavity QED,” Phys. Rev. Lett.83(20), 4204–4207 (1999).
[CrossRef]

O. Labeau, P. Tamarat, and B. Lounis, “Temperature dependence of the luminescence lifetime of single CdSe/ZnS quantum dots,” Phys. Rev. Lett.90(25), 257404 (2003).
[CrossRef] [PubMed]

J. M. Smith, P. A. Dalgarno, R. J. Warburton, A. O. Govorov, K. Karrai, B. D. Gerardot, and P. M. Petroff, “Voltage control of the spin dynamics of an exciton in a semiconductor quantum dot,” Phys. Rev. Lett.94(19), 197402 (2005).
[CrossRef] [PubMed]

Semicond. Sci. Technol.

A. J. Ramsay, “A review of the coherent optical control of the exciton and spin states of semiconductor quantum dots,” Semicond. Sci. Technol.25(10), 103001 (2010).
[CrossRef]

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