Abstract

GaN microwires grown by metalorganic vapour phase epitaxy and with radii typically on the order of 1-5 micrometers exhibit a number of resonances in their photoluminescence spectra. These resonances include whispering gallery modes and transverse Fabry-Perot modes. A detailed spectroscopic study by polarization-resolved microphotoluminescence, in combination with electron microscopy images, has enabled to differentiate both kinds of modes and determined their main spectral properties. Finally, the dispersion of the ordinary and extraordinary refractive indices of strain-free GaN in the visible-UV range has been obtained thanks to the numerical simulation of the observed modes.

©2012 Optical Society of America

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  1. T. Someya, R. Werner, A. Forchel, M. Catalano, R. Cingolani, and Y. Arakawa, “Room temperature lasing at blue wavelengths in Gallium Nitride microcavities,” Science 285(5435), 1905–1906 (1999).
    [Crossref] [PubMed]
  2. Y. Higuchi, K. Omae, H. Matsumura, and T. Mukai, “Room-temperature CW lasing of a GaN-based vertical surface-emitting laser by current injection,” Appl. Phys. Express 1, 121102 (2008).
    [Crossref]
  3. A. Imamoglu, R. J. Ram, S. Pau, and Y. Yamamoto, “Nonequilibrium condensates and lasers without inversion: Exciton-polariton lasers,” Phys. Rev. A 53(6), 4250–4253 (1996).
    [Crossref] [PubMed]
  4. S. Christopoulos, G. B. von Högersthal, A. J. D. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
    [Crossref] [PubMed]
  5. G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in a GaN/AlGaN multiple quantum well microcavity,” Appl. Phys. Lett. 93(5), 051102 (2008).
    [Crossref]
  6. S. L. McCall, A. F. J. Levi, R. E. Slusher, S. J. Pearton, and R. A. Logan, “Whispering-gallery mode microdisk lasers,” Appl. Phys. Lett. 60(3), 289–291 (1992).
    [Crossref]
  7. R. A. Mair, K. C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, A. Botchkarev, W. Kim, H. Morkoç, and M. A. Khan, “Optical modes within III-nitrides multiple quantum well microdisk cavities,” Appl. Phys. Lett. 72(13), 1530–1532 (1998).
    [Crossref]
  8. S. Chang, N. B. Rex, R. K. Chang, G. Chong, and L. J. Guido, “Stimulated emission and lasing in whispering-gallery mods of GaN microdisck cavities,” Appl. Phys. Lett. 75(2), 166–168 (1999).
    [Crossref]
  9. A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous-wave lasing in GaN/InGaN microdisks,” Nat. Photonics 1(1), 61–64 (2007).
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  11. M. Mexis, S. Sergent, T. Guillet, C. Brimont, T. Bretagnon, B. Gil, F. Semond, M. Leroux, D. Néel, S. David, X. Chécoury, and P. Boucaud, “High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots,” Opt. Lett. 36(12), 2203–2205 (2011).
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  15. A. Trichet, L. Sun, G. Pavlovic, N. A. Gippius, G. Malpuech, W. Xie, Z. Chen, M. Richard, and L. Dang, “One-dimensional ZnO exciton polaritons with negligible thermal broadening at room temperature,” Phys. Rev. B 83(4), 041302 (2011).
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  16. B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zuniga-Perez, “Fabrication and growth of GaN-based micro and nanostructures,” Int. J. Nanotechnol. 9(3/4/5/6/7), 412–427 (2012).
    [Crossref]
  17. M. Leroux, B. Beaumont, N. Grandjean, P. Lorenzini, S. Haffouz, P. Vennéguès, J. Massies, and P. Gibart, “Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire,” Mater. Sci. Eng. B 50(1-3), 97–104 (1997).
    [Crossref]
  18. A. Trichet, F. Medard, J. Zuniga-Perez, B. Alloing, and M. Richard,“From strong to weak coupling regime in a single GaN microwire up to room temperature,” arXiv 1106.5595 (2011).
  19. C. Hums, T. Finger, T. Hempel, J. Christen, A. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate,” J. Appl. Phys. 101(3), 033113 (2007).
    [Crossref]
  20. E. F. Schubert, Light-Emitting Diodes(Cambridge University Press, 2003), Chap. 9.
  21. C. Czekalla, T. Nobis, A. Rahm, B. Q. Cao, J. Zuniga-Perez, C. Sturm, R. Schmidt-Grund, M. Lorenz, and M. Grundmann, “Whispering-gallery modes in zinc oxide micro- and nanowires,” Phys. Status Solidi B 247(6), 1282–1293 (2010).
    [Crossref]
  22. A. K. Bhowmik, “Polygonal optical cavities,” Appl. Opt. 39(18), 3071–3075 (2000).
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  23. C. P. Dietrich, M. Lange, C. Sturm, R. Schmidt-Grund, and M. Grundmann, “One- and two-dimensional cavity modes in ZnO microwires,” New J. Phys. 13(10), 103021 (2011).
    [Crossref]
  24. L. Sun, H. Dong, W. Xie, Z. An, X. Shen, and Z. Chen, “Quasi-whispering gallery modes of exciton-polaritons in a ZnO microrod,” Opt. Express 18(15), 15371–15376 (2010).
    [Crossref] [PubMed]
  25. M. J. Bergmann, U. Ozgur, H. C. Casey, H. O. Everitt, and J. F. Muth, “Ordinary and extraordinary refractive indices for AlxGa1-xN epitaxial layers,” Appl. Phys. Lett. 75(1), 67–69 (1999).
    [Crossref]
  26. S. Pezzagna, J. Brault, M. Leroux, J. Massies, and M. de Micheli, “Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding,” J. Appl. Phys. 103(12), 123112 (2008).
    [Crossref]
  27. S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog, “Polarization-dependent spectroscopic study of M-plane GaN on γ-LiAlO2,” Appl. Phys. Lett. 80(3), 413–415 (2002).
    [Crossref]
  28. S. Shokhovets, R. Goldhahn, G. Gobsch, S. Piekh, R. Lantier, A. Rizzi, V. Lebedev, and W. Richter, “Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry,” J. Appl. Phys. 94(1), 307–312 (2003).
    [Crossref]
  29. A. Billeb, W. Grieshaber, D. Stocker, E. F. Schubert, and R. F. Karlicek., “Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures,” Appl. Phys. Lett. 70(21), 2790–2792 (1997).
    [Crossref]
  30. Ü. Özgür, G. Webb-Wood, H. O. Everitt, F. Yun, and H. Morkoç, “Systematic measurement of AlxGa1-xN refractive indices,” Appl. Phys. Lett. 79(25), 4103–4105 (2001).
    [Crossref]
  31. N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, J. Leymarie, P. Disseix, D. Byrne, F. Semond, and J. Massies, “Determination of the refractive indices of AlN, GaN and AlxGa1-xN grown on (111)Si substrates,” J. Appl. Phys. 93(9), 5222–5226 (2003).
    [Crossref]

2012 (1)

B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zuniga-Perez, “Fabrication and growth of GaN-based micro and nanostructures,” Int. J. Nanotechnol. 9(3/4/5/6/7), 412–427 (2012).
[Crossref]

2011 (3)

A. Trichet, L. Sun, G. Pavlovic, N. A. Gippius, G. Malpuech, W. Xie, Z. Chen, M. Richard, and L. Dang, “One-dimensional ZnO exciton polaritons with negligible thermal broadening at room temperature,” Phys. Rev. B 83(4), 041302 (2011).
[Crossref]

C. P. Dietrich, M. Lange, C. Sturm, R. Schmidt-Grund, and M. Grundmann, “One- and two-dimensional cavity modes in ZnO microwires,” New J. Phys. 13(10), 103021 (2011).
[Crossref]

M. Mexis, S. Sergent, T. Guillet, C. Brimont, T. Bretagnon, B. Gil, F. Semond, M. Leroux, D. Néel, S. David, X. Chécoury, and P. Boucaud, “High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots,” Opt. Lett. 36(12), 2203–2205 (2011).
[Crossref] [PubMed]

2010 (3)

L. Sun, H. Dong, W. Xie, Z. An, X. Shen, and Z. Chen, “Quasi-whispering gallery modes of exciton-polaritons in a ZnO microrod,” Opt. Express 18(15), 15371–15376 (2010).
[Crossref] [PubMed]

C. Czekalla, T. Nobis, A. Rahm, B. Q. Cao, J. Zuniga-Perez, C. Sturm, R. Schmidt-Grund, M. Lorenz, and M. Grundmann, “Whispering-gallery modes in zinc oxide micro- and nanowires,” Phys. Status Solidi B 247(6), 1282–1293 (2010).
[Crossref]

M. Lorenz, A. Rahm, B. Q. Cao, J. Zuniga-Perez, E. M. Kaidashev, N. Zhakarov, G. Wagner, T. Nobis, C. Czekalla, G. Zimmermann, and M. Grundmann, “Self-organized growth of ZnO-based nano and microstructures,” Phys. Status Solidi B 247(6), 1265–1281 (2010).
[Crossref]

2008 (4)

D. Simeonov, E. Feltin, A. Altoukhov, A. Castiglia, J. F. Carlin, R. Butté, and N. Grandjean, “High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers,” Appl. Phys. Lett. 92(17), 171102 (2008).
[Crossref]

Y. Higuchi, K. Omae, H. Matsumura, and T. Mukai, “Room-temperature CW lasing of a GaN-based vertical surface-emitting laser by current injection,” Appl. Phys. Express 1, 121102 (2008).
[Crossref]

G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in a GaN/AlGaN multiple quantum well microcavity,” Appl. Phys. Lett. 93(5), 051102 (2008).
[Crossref]

S. Pezzagna, J. Brault, M. Leroux, J. Massies, and M. de Micheli, “Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding,” J. Appl. Phys. 103(12), 123112 (2008).
[Crossref]

2007 (3)

C. Hums, T. Finger, T. Hempel, J. Christen, A. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate,” J. Appl. Phys. 101(3), 033113 (2007).
[Crossref]

S. Christopoulos, G. B. von Högersthal, A. J. D. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
[Crossref] [PubMed]

A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous-wave lasing in GaN/InGaN microdisks,” Nat. Photonics 1(1), 61–64 (2007).
[Crossref]

2004 (1)

T. Nobis, E. M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann, and M. Grundmann, “Whispering gallery modes in nanosized dielectric resonators with hexagonal cross section,” Phys. Rev. Lett. 93(10), 103903 (2004).
[Crossref] [PubMed]

2003 (3)

J. Wiersig, “Hexagonal dielectric resonators and microcrystal lasers,” Phys. Rev. A 67(2), 023807 (2003).
[Crossref]

S. Shokhovets, R. Goldhahn, G. Gobsch, S. Piekh, R. Lantier, A. Rizzi, V. Lebedev, and W. Richter, “Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry,” J. Appl. Phys. 94(1), 307–312 (2003).
[Crossref]

N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, J. Leymarie, P. Disseix, D. Byrne, F. Semond, and J. Massies, “Determination of the refractive indices of AlN, GaN and AlxGa1-xN grown on (111)Si substrates,” J. Appl. Phys. 93(9), 5222–5226 (2003).
[Crossref]

2002 (1)

S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog, “Polarization-dependent spectroscopic study of M-plane GaN on γ-LiAlO2,” Appl. Phys. Lett. 80(3), 413–415 (2002).
[Crossref]

2001 (1)

Ü. Özgür, G. Webb-Wood, H. O. Everitt, F. Yun, and H. Morkoç, “Systematic measurement of AlxGa1-xN refractive indices,” Appl. Phys. Lett. 79(25), 4103–4105 (2001).
[Crossref]

2000 (1)

1999 (3)

M. J. Bergmann, U. Ozgur, H. C. Casey, H. O. Everitt, and J. F. Muth, “Ordinary and extraordinary refractive indices for AlxGa1-xN epitaxial layers,” Appl. Phys. Lett. 75(1), 67–69 (1999).
[Crossref]

T. Someya, R. Werner, A. Forchel, M. Catalano, R. Cingolani, and Y. Arakawa, “Room temperature lasing at blue wavelengths in Gallium Nitride microcavities,” Science 285(5435), 1905–1906 (1999).
[Crossref] [PubMed]

S. Chang, N. B. Rex, R. K. Chang, G. Chong, and L. J. Guido, “Stimulated emission and lasing in whispering-gallery mods of GaN microdisck cavities,” Appl. Phys. Lett. 75(2), 166–168 (1999).
[Crossref]

1998 (1)

R. A. Mair, K. C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, A. Botchkarev, W. Kim, H. Morkoç, and M. A. Khan, “Optical modes within III-nitrides multiple quantum well microdisk cavities,” Appl. Phys. Lett. 72(13), 1530–1532 (1998).
[Crossref]

1997 (2)

M. Leroux, B. Beaumont, N. Grandjean, P. Lorenzini, S. Haffouz, P. Vennéguès, J. Massies, and P. Gibart, “Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire,” Mater. Sci. Eng. B 50(1-3), 97–104 (1997).
[Crossref]

A. Billeb, W. Grieshaber, D. Stocker, E. F. Schubert, and R. F. Karlicek., “Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures,” Appl. Phys. Lett. 70(21), 2790–2792 (1997).
[Crossref]

1996 (1)

A. Imamoglu, R. J. Ram, S. Pau, and Y. Yamamoto, “Nonequilibrium condensates and lasers without inversion: Exciton-polariton lasers,” Phys. Rev. A 53(6), 4250–4253 (1996).
[Crossref] [PubMed]

1992 (1)

S. L. McCall, A. F. J. Levi, R. E. Slusher, S. J. Pearton, and R. A. Logan, “Whispering-gallery mode microdisk lasers,” Appl. Phys. Lett. 60(3), 289–291 (1992).
[Crossref]

Alloing, B.

B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zuniga-Perez, “Fabrication and growth of GaN-based micro and nanostructures,” Int. J. Nanotechnol. 9(3/4/5/6/7), 412–427 (2012).
[Crossref]

Altoukhov, A.

D. Simeonov, E. Feltin, A. Altoukhov, A. Castiglia, J. F. Carlin, R. Butté, and N. Grandjean, “High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers,” Appl. Phys. Lett. 92(17), 171102 (2008).
[Crossref]

An, Z.

Antoine-Vincent, N.

N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, J. Leymarie, P. Disseix, D. Byrne, F. Semond, and J. Massies, “Determination of the refractive indices of AlN, GaN and AlxGa1-xN grown on (111)Si substrates,” J. Appl. Phys. 93(9), 5222–5226 (2003).
[Crossref]

Arakawa, Y.

T. Someya, R. Werner, A. Forchel, M. Catalano, R. Cingolani, and Y. Arakawa, “Room temperature lasing at blue wavelengths in Gallium Nitride microcavities,” Science 285(5435), 1905–1906 (1999).
[Crossref] [PubMed]

Baumberg, J. J.

S. Christopoulos, G. B. von Högersthal, A. J. D. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
[Crossref] [PubMed]

Beaumont, B.

M. Leroux, B. Beaumont, N. Grandjean, P. Lorenzini, S. Haffouz, P. Vennéguès, J. Massies, and P. Gibart, “Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire,” Mater. Sci. Eng. B 50(1-3), 97–104 (1997).
[Crossref]

Beraudo, E.

B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zuniga-Perez, “Fabrication and growth of GaN-based micro and nanostructures,” Int. J. Nanotechnol. 9(3/4/5/6/7), 412–427 (2012).
[Crossref]

Bergmann, M. J.

M. J. Bergmann, U. Ozgur, H. C. Casey, H. O. Everitt, and J. F. Muth, “Ordinary and extraordinary refractive indices for AlxGa1-xN epitaxial layers,” Appl. Phys. Lett. 75(1), 67–69 (1999).
[Crossref]

Bhowmik, A. K.

Billeb, A.

A. Billeb, W. Grieshaber, D. Stocker, E. F. Schubert, and R. F. Karlicek., “Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures,” Appl. Phys. Lett. 70(21), 2790–2792 (1997).
[Crossref]

Botchkarev, A.

R. A. Mair, K. C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, A. Botchkarev, W. Kim, H. Morkoç, and M. A. Khan, “Optical modes within III-nitrides multiple quantum well microdisk cavities,” Appl. Phys. Lett. 72(13), 1530–1532 (1998).
[Crossref]

Boucaud, P.

Brandt, O.

S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog, “Polarization-dependent spectroscopic study of M-plane GaN on γ-LiAlO2,” Appl. Phys. Lett. 80(3), 413–415 (2002).
[Crossref]

Brault, J.

S. Pezzagna, J. Brault, M. Leroux, J. Massies, and M. de Micheli, “Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding,” J. Appl. Phys. 103(12), 123112 (2008).
[Crossref]

Bretagnon, T.

Brimont, C.

Butté, R.

D. Simeonov, E. Feltin, A. Altoukhov, A. Castiglia, J. F. Carlin, R. Butté, and N. Grandjean, “High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers,” Appl. Phys. Lett. 92(17), 171102 (2008).
[Crossref]

G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in a GaN/AlGaN multiple quantum well microcavity,” Appl. Phys. Lett. 93(5), 051102 (2008).
[Crossref]

S. Christopoulos, G. B. von Högersthal, A. J. D. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
[Crossref] [PubMed]

Byrne, D.

N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, J. Leymarie, P. Disseix, D. Byrne, F. Semond, and J. Massies, “Determination of the refractive indices of AlN, GaN and AlxGa1-xN grown on (111)Si substrates,” J. Appl. Phys. 93(9), 5222–5226 (2003).
[Crossref]

Cao, B. Q.

M. Lorenz, A. Rahm, B. Q. Cao, J. Zuniga-Perez, E. M. Kaidashev, N. Zhakarov, G. Wagner, T. Nobis, C. Czekalla, G. Zimmermann, and M. Grundmann, “Self-organized growth of ZnO-based nano and microstructures,” Phys. Status Solidi B 247(6), 1265–1281 (2010).
[Crossref]

C. Czekalla, T. Nobis, A. Rahm, B. Q. Cao, J. Zuniga-Perez, C. Sturm, R. Schmidt-Grund, M. Lorenz, and M. Grundmann, “Whispering-gallery modes in zinc oxide micro- and nanowires,” Phys. Status Solidi B 247(6), 1282–1293 (2010).
[Crossref]

Carlin, J. F.

D. Simeonov, E. Feltin, A. Altoukhov, A. Castiglia, J. F. Carlin, R. Butté, and N. Grandjean, “High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers,” Appl. Phys. Lett. 92(17), 171102 (2008).
[Crossref]

G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in a GaN/AlGaN multiple quantum well microcavity,” Appl. Phys. Lett. 93(5), 051102 (2008).
[Crossref]

S. Christopoulos, G. B. von Högersthal, A. J. D. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
[Crossref] [PubMed]

Casey, H. C.

M. J. Bergmann, U. Ozgur, H. C. Casey, H. O. Everitt, and J. F. Muth, “Ordinary and extraordinary refractive indices for AlxGa1-xN epitaxial layers,” Appl. Phys. Lett. 75(1), 67–69 (1999).
[Crossref]

Castiglia, A.

D. Simeonov, E. Feltin, A. Altoukhov, A. Castiglia, J. F. Carlin, R. Butté, and N. Grandjean, “High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers,” Appl. Phys. Lett. 92(17), 171102 (2008).
[Crossref]

Catalano, M.

T. Someya, R. Werner, A. Forchel, M. Catalano, R. Cingolani, and Y. Arakawa, “Room temperature lasing at blue wavelengths in Gallium Nitride microcavities,” Science 285(5435), 1905–1906 (1999).
[Crossref] [PubMed]

Chang, R. K.

S. Chang, N. B. Rex, R. K. Chang, G. Chong, and L. J. Guido, “Stimulated emission and lasing in whispering-gallery mods of GaN microdisck cavities,” Appl. Phys. Lett. 75(2), 166–168 (1999).
[Crossref]

Chang, S.

S. Chang, N. B. Rex, R. K. Chang, G. Chong, and L. J. Guido, “Stimulated emission and lasing in whispering-gallery mods of GaN microdisck cavities,” Appl. Phys. Lett. 75(2), 166–168 (1999).
[Crossref]

Chécoury, X.

Chen, Z.

A. Trichet, L. Sun, G. Pavlovic, N. A. Gippius, G. Malpuech, W. Xie, Z. Chen, M. Richard, and L. Dang, “One-dimensional ZnO exciton polaritons with negligible thermal broadening at room temperature,” Phys. Rev. B 83(4), 041302 (2011).
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L. Sun, H. Dong, W. Xie, Z. An, X. Shen, and Z. Chen, “Quasi-whispering gallery modes of exciton-polaritons in a ZnO microrod,” Opt. Express 18(15), 15371–15376 (2010).
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Chong, G.

S. Chang, N. B. Rex, R. K. Chang, G. Chong, and L. J. Guido, “Stimulated emission and lasing in whispering-gallery mods of GaN microdisck cavities,” Appl. Phys. Lett. 75(2), 166–168 (1999).
[Crossref]

Christen, J.

C. Hums, T. Finger, T. Hempel, J. Christen, A. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate,” J. Appl. Phys. 101(3), 033113 (2007).
[Crossref]

Christmann, G.

G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in a GaN/AlGaN multiple quantum well microcavity,” Appl. Phys. Lett. 93(5), 051102 (2008).
[Crossref]

S. Christopoulos, G. B. von Högersthal, A. J. D. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
[Crossref] [PubMed]

Christopoulos, S.

S. Christopoulos, G. B. von Högersthal, A. J. D. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
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Cingolani, R.

T. Someya, R. Werner, A. Forchel, M. Catalano, R. Cingolani, and Y. Arakawa, “Room temperature lasing at blue wavelengths in Gallium Nitride microcavities,” Science 285(5435), 1905–1906 (1999).
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Cordier, Y.

B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zuniga-Perez, “Fabrication and growth of GaN-based micro and nanostructures,” Int. J. Nanotechnol. 9(3/4/5/6/7), 412–427 (2012).
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Czekalla, C.

M. Lorenz, A. Rahm, B. Q. Cao, J. Zuniga-Perez, E. M. Kaidashev, N. Zhakarov, G. Wagner, T. Nobis, C. Czekalla, G. Zimmermann, and M. Grundmann, “Self-organized growth of ZnO-based nano and microstructures,” Phys. Status Solidi B 247(6), 1265–1281 (2010).
[Crossref]

C. Czekalla, T. Nobis, A. Rahm, B. Q. Cao, J. Zuniga-Perez, C. Sturm, R. Schmidt-Grund, M. Lorenz, and M. Grundmann, “Whispering-gallery modes in zinc oxide micro- and nanowires,” Phys. Status Solidi B 247(6), 1282–1293 (2010).
[Crossref]

Dadgar, A.

C. Hums, T. Finger, T. Hempel, J. Christen, A. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate,” J. Appl. Phys. 101(3), 033113 (2007).
[Crossref]

Dai, L.

R. A. Mair, K. C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, A. Botchkarev, W. Kim, H. Morkoç, and M. A. Khan, “Optical modes within III-nitrides multiple quantum well microdisk cavities,” Appl. Phys. Lett. 72(13), 1530–1532 (1998).
[Crossref]

Dang, L.

A. Trichet, L. Sun, G. Pavlovic, N. A. Gippius, G. Malpuech, W. Xie, Z. Chen, M. Richard, and L. Dang, “One-dimensional ZnO exciton polaritons with negligible thermal broadening at room temperature,” Phys. Rev. B 83(4), 041302 (2011).
[Crossref]

David, S.

de Micheli, M.

S. Pezzagna, J. Brault, M. Leroux, J. Massies, and M. de Micheli, “Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding,” J. Appl. Phys. 103(12), 123112 (2008).
[Crossref]

Dietrich, C. P.

C. P. Dietrich, M. Lange, C. Sturm, R. Schmidt-Grund, and M. Grundmann, “One- and two-dimensional cavity modes in ZnO microwires,” New J. Phys. 13(10), 103021 (2011).
[Crossref]

Disseix, P.

N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, J. Leymarie, P. Disseix, D. Byrne, F. Semond, and J. Massies, “Determination of the refractive indices of AlN, GaN and AlxGa1-xN grown on (111)Si substrates,” J. Appl. Phys. 93(9), 5222–5226 (2003).
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Dong, H.

Everitt, H. O.

Ü. Özgür, G. Webb-Wood, H. O. Everitt, F. Yun, and H. Morkoç, “Systematic measurement of AlxGa1-xN refractive indices,” Appl. Phys. Lett. 79(25), 4103–4105 (2001).
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M. J. Bergmann, U. Ozgur, H. C. Casey, H. O. Everitt, and J. F. Muth, “Ordinary and extraordinary refractive indices for AlxGa1-xN epitaxial layers,” Appl. Phys. Lett. 75(1), 67–69 (1999).
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Feltin, E.

D. Simeonov, E. Feltin, A. Altoukhov, A. Castiglia, J. F. Carlin, R. Butté, and N. Grandjean, “High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers,” Appl. Phys. Lett. 92(17), 171102 (2008).
[Crossref]

G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in a GaN/AlGaN multiple quantum well microcavity,” Appl. Phys. Lett. 93(5), 051102 (2008).
[Crossref]

S. Christopoulos, G. B. von Högersthal, A. J. D. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
[Crossref] [PubMed]

Finger, T.

C. Hums, T. Finger, T. Hempel, J. Christen, A. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate,” J. Appl. Phys. 101(3), 033113 (2007).
[Crossref]

Forchel, A.

T. Someya, R. Werner, A. Forchel, M. Catalano, R. Cingolani, and Y. Arakawa, “Room temperature lasing at blue wavelengths in Gallium Nitride microcavities,” Science 285(5435), 1905–1906 (1999).
[Crossref] [PubMed]

Ghosh, S.

S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog, “Polarization-dependent spectroscopic study of M-plane GaN on γ-LiAlO2,” Appl. Phys. Lett. 80(3), 413–415 (2002).
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Gibart, P.

M. Leroux, B. Beaumont, N. Grandjean, P. Lorenzini, S. Haffouz, P. Vennéguès, J. Massies, and P. Gibart, “Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire,” Mater. Sci. Eng. B 50(1-3), 97–104 (1997).
[Crossref]

Gil, B.

Gippius, N. A.

A. Trichet, L. Sun, G. Pavlovic, N. A. Gippius, G. Malpuech, W. Xie, Z. Chen, M. Richard, and L. Dang, “One-dimensional ZnO exciton polaritons with negligible thermal broadening at room temperature,” Phys. Rev. B 83(4), 041302 (2011).
[Crossref]

Gobsch, G.

S. Shokhovets, R. Goldhahn, G. Gobsch, S. Piekh, R. Lantier, A. Rizzi, V. Lebedev, and W. Richter, “Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry,” J. Appl. Phys. 94(1), 307–312 (2003).
[Crossref]

Goldhahn, R.

S. Shokhovets, R. Goldhahn, G. Gobsch, S. Piekh, R. Lantier, A. Rizzi, V. Lebedev, and W. Richter, “Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry,” J. Appl. Phys. 94(1), 307–312 (2003).
[Crossref]

Grahn, H. T.

S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog, “Polarization-dependent spectroscopic study of M-plane GaN on γ-LiAlO2,” Appl. Phys. Lett. 80(3), 413–415 (2002).
[Crossref]

Grandjean, N.

G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in a GaN/AlGaN multiple quantum well microcavity,” Appl. Phys. Lett. 93(5), 051102 (2008).
[Crossref]

D. Simeonov, E. Feltin, A. Altoukhov, A. Castiglia, J. F. Carlin, R. Butté, and N. Grandjean, “High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers,” Appl. Phys. Lett. 92(17), 171102 (2008).
[Crossref]

S. Christopoulos, G. B. von Högersthal, A. J. D. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
[Crossref] [PubMed]

M. Leroux, B. Beaumont, N. Grandjean, P. Lorenzini, S. Haffouz, P. Vennéguès, J. Massies, and P. Gibart, “Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire,” Mater. Sci. Eng. B 50(1-3), 97–104 (1997).
[Crossref]

Grieshaber, W.

A. Billeb, W. Grieshaber, D. Stocker, E. F. Schubert, and R. F. Karlicek., “Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures,” Appl. Phys. Lett. 70(21), 2790–2792 (1997).
[Crossref]

Grundmann, M.

C. P. Dietrich, M. Lange, C. Sturm, R. Schmidt-Grund, and M. Grundmann, “One- and two-dimensional cavity modes in ZnO microwires,” New J. Phys. 13(10), 103021 (2011).
[Crossref]

M. Lorenz, A. Rahm, B. Q. Cao, J. Zuniga-Perez, E. M. Kaidashev, N. Zhakarov, G. Wagner, T. Nobis, C. Czekalla, G. Zimmermann, and M. Grundmann, “Self-organized growth of ZnO-based nano and microstructures,” Phys. Status Solidi B 247(6), 1265–1281 (2010).
[Crossref]

C. Czekalla, T. Nobis, A. Rahm, B. Q. Cao, J. Zuniga-Perez, C. Sturm, R. Schmidt-Grund, M. Lorenz, and M. Grundmann, “Whispering-gallery modes in zinc oxide micro- and nanowires,” Phys. Status Solidi B 247(6), 1282–1293 (2010).
[Crossref]

T. Nobis, E. M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann, and M. Grundmann, “Whispering gallery modes in nanosized dielectric resonators with hexagonal cross section,” Phys. Rev. Lett. 93(10), 103903 (2004).
[Crossref] [PubMed]

T. Nobis, E. M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann, and M. Grundmann, “Whispering gallery modes in nanosized dielectric resonators with hexagonal cross section,” Phys. Rev. Lett. 93(10), 103903 (2004).
[Crossref] [PubMed]

Grundy, A. J. D.

S. Christopoulos, G. B. von Högersthal, A. J. D. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
[Crossref] [PubMed]

Guido, L. J.

S. Chang, N. B. Rex, R. K. Chang, G. Chong, and L. J. Guido, “Stimulated emission and lasing in whispering-gallery mods of GaN microdisck cavities,” Appl. Phys. Lett. 75(2), 166–168 (1999).
[Crossref]

Guillet, T.

Haberer, E. D.

A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous-wave lasing in GaN/InGaN microdisks,” Nat. Photonics 1(1), 61–64 (2007).
[Crossref]

Haffouz, S.

M. Leroux, B. Beaumont, N. Grandjean, P. Lorenzini, S. Haffouz, P. Vennéguès, J. Massies, and P. Gibart, “Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire,” Mater. Sci. Eng. B 50(1-3), 97–104 (1997).
[Crossref]

Hempel, T.

C. Hums, T. Finger, T. Hempel, J. Christen, A. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate,” J. Appl. Phys. 101(3), 033113 (2007).
[Crossref]

Higuchi, Y.

Y. Higuchi, K. Omae, H. Matsumura, and T. Mukai, “Room-temperature CW lasing of a GaN-based vertical surface-emitting laser by current injection,” Appl. Phys. Express 1, 121102 (2008).
[Crossref]

Hoffmann, A.

C. Hums, T. Finger, T. Hempel, J. Christen, A. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate,” J. Appl. Phys. 101(3), 033113 (2007).
[Crossref]

Hu, E. L.

A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous-wave lasing in GaN/InGaN microdisks,” Nat. Photonics 1(1), 61–64 (2007).
[Crossref]

Hums, C.

C. Hums, T. Finger, T. Hempel, J. Christen, A. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate,” J. Appl. Phys. 101(3), 033113 (2007).
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Imamoglu, A.

A. Imamoglu, R. J. Ram, S. Pau, and Y. Yamamoto, “Nonequilibrium condensates and lasers without inversion: Exciton-polariton lasers,” Phys. Rev. A 53(6), 4250–4253 (1996).
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Jiang, H. X.

R. A. Mair, K. C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, A. Botchkarev, W. Kim, H. Morkoç, and M. A. Khan, “Optical modes within III-nitrides multiple quantum well microdisk cavities,” Appl. Phys. Lett. 72(13), 1530–1532 (1998).
[Crossref]

Kaidashev, E. M.

M. Lorenz, A. Rahm, B. Q. Cao, J. Zuniga-Perez, E. M. Kaidashev, N. Zhakarov, G. Wagner, T. Nobis, C. Czekalla, G. Zimmermann, and M. Grundmann, “Self-organized growth of ZnO-based nano and microstructures,” Phys. Status Solidi B 247(6), 1265–1281 (2010).
[Crossref]

T. Nobis, E. M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann, and M. Grundmann, “Whispering gallery modes in nanosized dielectric resonators with hexagonal cross section,” Phys. Rev. Lett. 93(10), 103903 (2004).
[Crossref] [PubMed]

Karlicek, R. F.

A. Billeb, W. Grieshaber, D. Stocker, E. F. Schubert, and R. F. Karlicek., “Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures,” Appl. Phys. Lett. 70(21), 2790–2792 (1997).
[Crossref]

Kavokin, A. V.

S. Christopoulos, G. B. von Högersthal, A. J. D. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
[Crossref] [PubMed]

Khan, M. A.

R. A. Mair, K. C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, A. Botchkarev, W. Kim, H. Morkoç, and M. A. Khan, “Optical modes within III-nitrides multiple quantum well microdisk cavities,” Appl. Phys. Lett. 72(13), 1530–1532 (1998).
[Crossref]

Kim, W.

R. A. Mair, K. C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, A. Botchkarev, W. Kim, H. Morkoç, and M. A. Khan, “Optical modes within III-nitrides multiple quantum well microdisk cavities,” Appl. Phys. Lett. 72(13), 1530–1532 (1998).
[Crossref]

Krost, A.

C. Hums, T. Finger, T. Hempel, J. Christen, A. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate,” J. Appl. Phys. 101(3), 033113 (2007).
[Crossref]

Lagoudakis, P. G.

S. Christopoulos, G. B. von Högersthal, A. J. D. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
[Crossref] [PubMed]

Lange, M.

C. P. Dietrich, M. Lange, C. Sturm, R. Schmidt-Grund, and M. Grundmann, “One- and two-dimensional cavity modes in ZnO microwires,” New J. Phys. 13(10), 103021 (2011).
[Crossref]

Lantier, R.

S. Shokhovets, R. Goldhahn, G. Gobsch, S. Piekh, R. Lantier, A. Rizzi, V. Lebedev, and W. Richter, “Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry,” J. Appl. Phys. 94(1), 307–312 (2003).
[Crossref]

Lebedev, V.

S. Shokhovets, R. Goldhahn, G. Gobsch, S. Piekh, R. Lantier, A. Rizzi, V. Lebedev, and W. Richter, “Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry,” J. Appl. Phys. 94(1), 307–312 (2003).
[Crossref]

Lee, K. H.

A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous-wave lasing in GaN/InGaN microdisks,” Nat. Photonics 1(1), 61–64 (2007).
[Crossref]

Leroux, M.

M. Mexis, S. Sergent, T. Guillet, C. Brimont, T. Bretagnon, B. Gil, F. Semond, M. Leroux, D. Néel, S. David, X. Chécoury, and P. Boucaud, “High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots,” Opt. Lett. 36(12), 2203–2205 (2011).
[Crossref] [PubMed]

S. Pezzagna, J. Brault, M. Leroux, J. Massies, and M. de Micheli, “Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding,” J. Appl. Phys. 103(12), 123112 (2008).
[Crossref]

M. Leroux, B. Beaumont, N. Grandjean, P. Lorenzini, S. Haffouz, P. Vennéguès, J. Massies, and P. Gibart, “Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire,” Mater. Sci. Eng. B 50(1-3), 97–104 (1997).
[Crossref]

Levi, A. F. J.

S. L. McCall, A. F. J. Levi, R. E. Slusher, S. J. Pearton, and R. A. Logan, “Whispering-gallery mode microdisk lasers,” Appl. Phys. Lett. 60(3), 289–291 (1992).
[Crossref]

Leymarie, J.

N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, J. Leymarie, P. Disseix, D. Byrne, F. Semond, and J. Massies, “Determination of the refractive indices of AlN, GaN and AlxGa1-xN grown on (111)Si substrates,” J. Appl. Phys. 93(9), 5222–5226 (2003).
[Crossref]

Lin, J. Y.

R. A. Mair, K. C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, A. Botchkarev, W. Kim, H. Morkoç, and M. A. Khan, “Optical modes within III-nitrides multiple quantum well microdisk cavities,” Appl. Phys. Lett. 72(13), 1530–1532 (1998).
[Crossref]

Logan, R. A.

S. L. McCall, A. F. J. Levi, R. E. Slusher, S. J. Pearton, and R. A. Logan, “Whispering-gallery mode microdisk lasers,” Appl. Phys. Lett. 60(3), 289–291 (1992).
[Crossref]

Lorenz, M.

M. Lorenz, A. Rahm, B. Q. Cao, J. Zuniga-Perez, E. M. Kaidashev, N. Zhakarov, G. Wagner, T. Nobis, C. Czekalla, G. Zimmermann, and M. Grundmann, “Self-organized growth of ZnO-based nano and microstructures,” Phys. Status Solidi B 247(6), 1265–1281 (2010).
[Crossref]

C. Czekalla, T. Nobis, A. Rahm, B. Q. Cao, J. Zuniga-Perez, C. Sturm, R. Schmidt-Grund, M. Lorenz, and M. Grundmann, “Whispering-gallery modes in zinc oxide micro- and nanowires,” Phys. Status Solidi B 247(6), 1282–1293 (2010).
[Crossref]

T. Nobis, E. M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann, and M. Grundmann, “Whispering gallery modes in nanosized dielectric resonators with hexagonal cross section,” Phys. Rev. Lett. 93(10), 103903 (2004).
[Crossref] [PubMed]

Lorenzini, P.

M. Leroux, B. Beaumont, N. Grandjean, P. Lorenzini, S. Haffouz, P. Vennéguès, J. Massies, and P. Gibart, “Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire,” Mater. Sci. Eng. B 50(1-3), 97–104 (1997).
[Crossref]

Mair, R. A.

R. A. Mair, K. C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, A. Botchkarev, W. Kim, H. Morkoç, and M. A. Khan, “Optical modes within III-nitrides multiple quantum well microdisk cavities,” Appl. Phys. Lett. 72(13), 1530–1532 (1998).
[Crossref]

Malpuech, G.

A. Trichet, L. Sun, G. Pavlovic, N. A. Gippius, G. Malpuech, W. Xie, Z. Chen, M. Richard, and L. Dang, “One-dimensional ZnO exciton polaritons with negligible thermal broadening at room temperature,” Phys. Rev. B 83(4), 041302 (2011).
[Crossref]

Massies, J.

S. Pezzagna, J. Brault, M. Leroux, J. Massies, and M. de Micheli, “Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding,” J. Appl. Phys. 103(12), 123112 (2008).
[Crossref]

N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, J. Leymarie, P. Disseix, D. Byrne, F. Semond, and J. Massies, “Determination of the refractive indices of AlN, GaN and AlxGa1-xN grown on (111)Si substrates,” J. Appl. Phys. 93(9), 5222–5226 (2003).
[Crossref]

M. Leroux, B. Beaumont, N. Grandjean, P. Lorenzini, S. Haffouz, P. Vennéguès, J. Massies, and P. Gibart, “Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire,” Mater. Sci. Eng. B 50(1-3), 97–104 (1997).
[Crossref]

Matsumura, H.

Y. Higuchi, K. Omae, H. Matsumura, and T. Mukai, “Room-temperature CW lasing of a GaN-based vertical surface-emitting laser by current injection,” Appl. Phys. Express 1, 121102 (2008).
[Crossref]

McCall, S. L.

S. L. McCall, A. F. J. Levi, R. E. Slusher, S. J. Pearton, and R. A. Logan, “Whispering-gallery mode microdisk lasers,” Appl. Phys. Lett. 60(3), 289–291 (1992).
[Crossref]

Mexis, M.

Mihailovic, M.

N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, J. Leymarie, P. Disseix, D. Byrne, F. Semond, and J. Massies, “Determination of the refractive indices of AlN, GaN and AlxGa1-xN grown on (111)Si substrates,” J. Appl. Phys. 93(9), 5222–5226 (2003).
[Crossref]

Morkoç, H.

Ü. Özgür, G. Webb-Wood, H. O. Everitt, F. Yun, and H. Morkoç, “Systematic measurement of AlxGa1-xN refractive indices,” Appl. Phys. Lett. 79(25), 4103–4105 (2001).
[Crossref]

R. A. Mair, K. C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, A. Botchkarev, W. Kim, H. Morkoç, and M. A. Khan, “Optical modes within III-nitrides multiple quantum well microdisk cavities,” Appl. Phys. Lett. 72(13), 1530–1532 (1998).
[Crossref]

Mukai, T.

Y. Higuchi, K. Omae, H. Matsumura, and T. Mukai, “Room-temperature CW lasing of a GaN-based vertical surface-emitting laser by current injection,” Appl. Phys. Express 1, 121102 (2008).
[Crossref]

Muth, J. F.

M. J. Bergmann, U. Ozgur, H. C. Casey, H. O. Everitt, and J. F. Muth, “Ordinary and extraordinary refractive indices for AlxGa1-xN epitaxial layers,” Appl. Phys. Lett. 75(1), 67–69 (1999).
[Crossref]

Nakamura, S.

A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous-wave lasing in GaN/InGaN microdisks,” Nat. Photonics 1(1), 61–64 (2007).
[Crossref]

Natali, F.

N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, J. Leymarie, P. Disseix, D. Byrne, F. Semond, and J. Massies, “Determination of the refractive indices of AlN, GaN and AlxGa1-xN grown on (111)Si substrates,” J. Appl. Phys. 93(9), 5222–5226 (2003).
[Crossref]

Néel, D.

Nobis, T.

C. Czekalla, T. Nobis, A. Rahm, B. Q. Cao, J. Zuniga-Perez, C. Sturm, R. Schmidt-Grund, M. Lorenz, and M. Grundmann, “Whispering-gallery modes in zinc oxide micro- and nanowires,” Phys. Status Solidi B 247(6), 1282–1293 (2010).
[Crossref]

M. Lorenz, A. Rahm, B. Q. Cao, J. Zuniga-Perez, E. M. Kaidashev, N. Zhakarov, G. Wagner, T. Nobis, C. Czekalla, G. Zimmermann, and M. Grundmann, “Self-organized growth of ZnO-based nano and microstructures,” Phys. Status Solidi B 247(6), 1265–1281 (2010).
[Crossref]

T. Nobis, E. M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann, and M. Grundmann, “Whispering gallery modes in nanosized dielectric resonators with hexagonal cross section,” Phys. Rev. Lett. 93(10), 103903 (2004).
[Crossref] [PubMed]

Omae, K.

Y. Higuchi, K. Omae, H. Matsumura, and T. Mukai, “Room-temperature CW lasing of a GaN-based vertical surface-emitting laser by current injection,” Appl. Phys. Express 1, 121102 (2008).
[Crossref]

Ozgur, U.

M. J. Bergmann, U. Ozgur, H. C. Casey, H. O. Everitt, and J. F. Muth, “Ordinary and extraordinary refractive indices for AlxGa1-xN epitaxial layers,” Appl. Phys. Lett. 75(1), 67–69 (1999).
[Crossref]

Özgür, Ü.

Ü. Özgür, G. Webb-Wood, H. O. Everitt, F. Yun, and H. Morkoç, “Systematic measurement of AlxGa1-xN refractive indices,” Appl. Phys. Lett. 79(25), 4103–4105 (2001).
[Crossref]

Pau, S.

A. Imamoglu, R. J. Ram, S. Pau, and Y. Yamamoto, “Nonequilibrium condensates and lasers without inversion: Exciton-polariton lasers,” Phys. Rev. A 53(6), 4250–4253 (1996).
[Crossref] [PubMed]

Pavlovic, G.

A. Trichet, L. Sun, G. Pavlovic, N. A. Gippius, G. Malpuech, W. Xie, Z. Chen, M. Richard, and L. Dang, “One-dimensional ZnO exciton polaritons with negligible thermal broadening at room temperature,” Phys. Rev. B 83(4), 041302 (2011).
[Crossref]

Pearton, S. J.

S. L. McCall, A. F. J. Levi, R. E. Slusher, S. J. Pearton, and R. A. Logan, “Whispering-gallery mode microdisk lasers,” Appl. Phys. Lett. 60(3), 289–291 (1992).
[Crossref]

Pezzagna, S.

S. Pezzagna, J. Brault, M. Leroux, J. Massies, and M. de Micheli, “Refractive indices and elasto-optic coefficients of GaN studied by optical waveguiding,” J. Appl. Phys. 103(12), 123112 (2008).
[Crossref]

Piekh, S.

S. Shokhovets, R. Goldhahn, G. Gobsch, S. Piekh, R. Lantier, A. Rizzi, V. Lebedev, and W. Richter, “Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry,” J. Appl. Phys. 94(1), 307–312 (2003).
[Crossref]

Ploog, K. H.

S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog, “Polarization-dependent spectroscopic study of M-plane GaN on γ-LiAlO2,” Appl. Phys. Lett. 80(3), 413–415 (2002).
[Crossref]

Rahm, A.

C. Czekalla, T. Nobis, A. Rahm, B. Q. Cao, J. Zuniga-Perez, C. Sturm, R. Schmidt-Grund, M. Lorenz, and M. Grundmann, “Whispering-gallery modes in zinc oxide micro- and nanowires,” Phys. Status Solidi B 247(6), 1282–1293 (2010).
[Crossref]

M. Lorenz, A. Rahm, B. Q. Cao, J. Zuniga-Perez, E. M. Kaidashev, N. Zhakarov, G. Wagner, T. Nobis, C. Czekalla, G. Zimmermann, and M. Grundmann, “Self-organized growth of ZnO-based nano and microstructures,” Phys. Status Solidi B 247(6), 1265–1281 (2010).
[Crossref]

T. Nobis, E. M. Kaidashev, A. Rahm, M. Lorenz, M. Grundmann, and M. Grundmann, “Whispering gallery modes in nanosized dielectric resonators with hexagonal cross section,” Phys. Rev. Lett. 93(10), 103903 (2004).
[Crossref] [PubMed]

Ram, R. J.

A. Imamoglu, R. J. Ram, S. Pau, and Y. Yamamoto, “Nonequilibrium condensates and lasers without inversion: Exciton-polariton lasers,” Phys. Rev. A 53(6), 4250–4253 (1996).
[Crossref] [PubMed]

Rex, N. B.

S. Chang, N. B. Rex, R. K. Chang, G. Chong, and L. J. Guido, “Stimulated emission and lasing in whispering-gallery mods of GaN microdisck cavities,” Appl. Phys. Lett. 75(2), 166–168 (1999).
[Crossref]

Richard, M.

A. Trichet, L. Sun, G. Pavlovic, N. A. Gippius, G. Malpuech, W. Xie, Z. Chen, M. Richard, and L. Dang, “One-dimensional ZnO exciton polaritons with negligible thermal broadening at room temperature,” Phys. Rev. B 83(4), 041302 (2011).
[Crossref]

Richter, W.

S. Shokhovets, R. Goldhahn, G. Gobsch, S. Piekh, R. Lantier, A. Rizzi, V. Lebedev, and W. Richter, “Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry,” J. Appl. Phys. 94(1), 307–312 (2003).
[Crossref]

Rizzi, A.

S. Shokhovets, R. Goldhahn, G. Gobsch, S. Piekh, R. Lantier, A. Rizzi, V. Lebedev, and W. Richter, “Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry,” J. Appl. Phys. 94(1), 307–312 (2003).
[Crossref]

Schmidt-Grund, R.

C. P. Dietrich, M. Lange, C. Sturm, R. Schmidt-Grund, and M. Grundmann, “One- and two-dimensional cavity modes in ZnO microwires,” New J. Phys. 13(10), 103021 (2011).
[Crossref]

C. Czekalla, T. Nobis, A. Rahm, B. Q. Cao, J. Zuniga-Perez, C. Sturm, R. Schmidt-Grund, M. Lorenz, and M. Grundmann, “Whispering-gallery modes in zinc oxide micro- and nanowires,” Phys. Status Solidi B 247(6), 1282–1293 (2010).
[Crossref]

Schubert, E. F.

A. Billeb, W. Grieshaber, D. Stocker, E. F. Schubert, and R. F. Karlicek., “Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures,” Appl. Phys. Lett. 70(21), 2790–2792 (1997).
[Crossref]

Semond, F.

B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zuniga-Perez, “Fabrication and growth of GaN-based micro and nanostructures,” Int. J. Nanotechnol. 9(3/4/5/6/7), 412–427 (2012).
[Crossref]

M. Mexis, S. Sergent, T. Guillet, C. Brimont, T. Bretagnon, B. Gil, F. Semond, M. Leroux, D. Néel, S. David, X. Chécoury, and P. Boucaud, “High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots,” Opt. Lett. 36(12), 2203–2205 (2011).
[Crossref] [PubMed]

N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, J. Leymarie, P. Disseix, D. Byrne, F. Semond, and J. Massies, “Determination of the refractive indices of AlN, GaN and AlxGa1-xN grown on (111)Si substrates,” J. Appl. Phys. 93(9), 5222–5226 (2003).
[Crossref]

Sergent, S.

B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zuniga-Perez, “Fabrication and growth of GaN-based micro and nanostructures,” Int. J. Nanotechnol. 9(3/4/5/6/7), 412–427 (2012).
[Crossref]

M. Mexis, S. Sergent, T. Guillet, C. Brimont, T. Bretagnon, B. Gil, F. Semond, M. Leroux, D. Néel, S. David, X. Chécoury, and P. Boucaud, “High quality factor nitride-based optical cavities: microdisks with embedded GaN/Al(Ga)N quantum dots,” Opt. Lett. 36(12), 2203–2205 (2011).
[Crossref] [PubMed]

Sharma, R.

A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous-wave lasing in GaN/InGaN microdisks,” Nat. Photonics 1(1), 61–64 (2007).
[Crossref]

Shen, X.

Shokhovets, S.

S. Shokhovets, R. Goldhahn, G. Gobsch, S. Piekh, R. Lantier, A. Rizzi, V. Lebedev, and W. Richter, “Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry,” J. Appl. Phys. 94(1), 307–312 (2003).
[Crossref]

Simeonov, D.

D. Simeonov, E. Feltin, A. Altoukhov, A. Castiglia, J. F. Carlin, R. Butté, and N. Grandjean, “High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers,” Appl. Phys. Lett. 92(17), 171102 (2008).
[Crossref]

Slusher, R. E.

S. L. McCall, A. F. J. Levi, R. E. Slusher, S. J. Pearton, and R. A. Logan, “Whispering-gallery mode microdisk lasers,” Appl. Phys. Lett. 60(3), 289–291 (1992).
[Crossref]

Someya, T.

T. Someya, R. Werner, A. Forchel, M. Catalano, R. Cingolani, and Y. Arakawa, “Room temperature lasing at blue wavelengths in Gallium Nitride microcavities,” Science 285(5435), 1905–1906 (1999).
[Crossref] [PubMed]

Stocker, D.

A. Billeb, W. Grieshaber, D. Stocker, E. F. Schubert, and R. F. Karlicek., “Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures,” Appl. Phys. Lett. 70(21), 2790–2792 (1997).
[Crossref]

Sturm, C.

C. P. Dietrich, M. Lange, C. Sturm, R. Schmidt-Grund, and M. Grundmann, “One- and two-dimensional cavity modes in ZnO microwires,” New J. Phys. 13(10), 103021 (2011).
[Crossref]

C. Czekalla, T. Nobis, A. Rahm, B. Q. Cao, J. Zuniga-Perez, C. Sturm, R. Schmidt-Grund, M. Lorenz, and M. Grundmann, “Whispering-gallery modes in zinc oxide micro- and nanowires,” Phys. Status Solidi B 247(6), 1282–1293 (2010).
[Crossref]

Sun, L.

A. Trichet, L. Sun, G. Pavlovic, N. A. Gippius, G. Malpuech, W. Xie, Z. Chen, M. Richard, and L. Dang, “One-dimensional ZnO exciton polaritons with negligible thermal broadening at room temperature,” Phys. Rev. B 83(4), 041302 (2011).
[Crossref]

L. Sun, H. Dong, W. Xie, Z. An, X. Shen, and Z. Chen, “Quasi-whispering gallery modes of exciton-polaritons in a ZnO microrod,” Opt. Express 18(15), 15371–15376 (2010).
[Crossref] [PubMed]

Tamboli, A. C.

A. C. Tamboli, E. D. Haberer, R. Sharma, K. H. Lee, S. Nakamura, and E. L. Hu, “Room-temperature continuous-wave lasing in GaN/InGaN microdisks,” Nat. Photonics 1(1), 61–64 (2007).
[Crossref]

Tottereau, O.

B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zuniga-Perez, “Fabrication and growth of GaN-based micro and nanostructures,” Int. J. Nanotechnol. 9(3/4/5/6/7), 412–427 (2012).
[Crossref]

Trichet, A.

A. Trichet, L. Sun, G. Pavlovic, N. A. Gippius, G. Malpuech, W. Xie, Z. Chen, M. Richard, and L. Dang, “One-dimensional ZnO exciton polaritons with negligible thermal broadening at room temperature,” Phys. Rev. B 83(4), 041302 (2011).
[Crossref]

Vasson, A.

N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, J. Leymarie, P. Disseix, D. Byrne, F. Semond, and J. Massies, “Determination of the refractive indices of AlN, GaN and AlxGa1-xN grown on (111)Si substrates,” J. Appl. Phys. 93(9), 5222–5226 (2003).
[Crossref]

Vennéguès, P.

B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zuniga-Perez, “Fabrication and growth of GaN-based micro and nanostructures,” Int. J. Nanotechnol. 9(3/4/5/6/7), 412–427 (2012).
[Crossref]

M. Leroux, B. Beaumont, N. Grandjean, P. Lorenzini, S. Haffouz, P. Vennéguès, J. Massies, and P. Gibart, “Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire,” Mater. Sci. Eng. B 50(1-3), 97–104 (1997).
[Crossref]

Vézian, S.

B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zuniga-Perez, “Fabrication and growth of GaN-based micro and nanostructures,” Int. J. Nanotechnol. 9(3/4/5/6/7), 412–427 (2012).
[Crossref]

von Högersthal, G. B.

S. Christopoulos, G. B. von Högersthal, A. J. D. Grundy, P. G. Lagoudakis, A. V. Kavokin, J. J. Baumberg, G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in semiconductor microcavities,” Phys. Rev. Lett. 98(12), 126405 (2007).
[Crossref] [PubMed]

Wagner, G.

M. Lorenz, A. Rahm, B. Q. Cao, J. Zuniga-Perez, E. M. Kaidashev, N. Zhakarov, G. Wagner, T. Nobis, C. Czekalla, G. Zimmermann, and M. Grundmann, “Self-organized growth of ZnO-based nano and microstructures,” Phys. Status Solidi B 247(6), 1265–1281 (2010).
[Crossref]

Waltereit, P.

S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog, “Polarization-dependent spectroscopic study of M-plane GaN on γ-LiAlO2,” Appl. Phys. Lett. 80(3), 413–415 (2002).
[Crossref]

Webb-Wood, G.

Ü. Özgür, G. Webb-Wood, H. O. Everitt, F. Yun, and H. Morkoç, “Systematic measurement of AlxGa1-xN refractive indices,” Appl. Phys. Lett. 79(25), 4103–4105 (2001).
[Crossref]

Werner, R.

T. Someya, R. Werner, A. Forchel, M. Catalano, R. Cingolani, and Y. Arakawa, “Room temperature lasing at blue wavelengths in Gallium Nitride microcavities,” Science 285(5435), 1905–1906 (1999).
[Crossref] [PubMed]

Wiersig, J.

J. Wiersig, “Hexagonal dielectric resonators and microcrystal lasers,” Phys. Rev. A 67(2), 023807 (2003).
[Crossref]

Xie, W.

A. Trichet, L. Sun, G. Pavlovic, N. A. Gippius, G. Malpuech, W. Xie, Z. Chen, M. Richard, and L. Dang, “One-dimensional ZnO exciton polaritons with negligible thermal broadening at room temperature,” Phys. Rev. B 83(4), 041302 (2011).
[Crossref]

L. Sun, H. Dong, W. Xie, Z. An, X. Shen, and Z. Chen, “Quasi-whispering gallery modes of exciton-polaritons in a ZnO microrod,” Opt. Express 18(15), 15371–15376 (2010).
[Crossref] [PubMed]

Yamamoto, Y.

A. Imamoglu, R. J. Ram, S. Pau, and Y. Yamamoto, “Nonequilibrium condensates and lasers without inversion: Exciton-polariton lasers,” Phys. Rev. A 53(6), 4250–4253 (1996).
[Crossref] [PubMed]

Yun, F.

Ü. Özgür, G. Webb-Wood, H. O. Everitt, F. Yun, and H. Morkoç, “Systematic measurement of AlxGa1-xN refractive indices,” Appl. Phys. Lett. 79(25), 4103–4105 (2001).
[Crossref]

Zeng, K. C.

R. A. Mair, K. C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, A. Botchkarev, W. Kim, H. Morkoç, and M. A. Khan, “Optical modes within III-nitrides multiple quantum well microdisk cavities,” Appl. Phys. Lett. 72(13), 1530–1532 (1998).
[Crossref]

Zhakarov, N.

M. Lorenz, A. Rahm, B. Q. Cao, J. Zuniga-Perez, E. M. Kaidashev, N. Zhakarov, G. Wagner, T. Nobis, C. Czekalla, G. Zimmermann, and M. Grundmann, “Self-organized growth of ZnO-based nano and microstructures,” Phys. Status Solidi B 247(6), 1265–1281 (2010).
[Crossref]

Zhang, B.

R. A. Mair, K. C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, A. Botchkarev, W. Kim, H. Morkoç, and M. A. Khan, “Optical modes within III-nitrides multiple quantum well microdisk cavities,” Appl. Phys. Lett. 72(13), 1530–1532 (1998).
[Crossref]

Zimmermann, G.

M. Lorenz, A. Rahm, B. Q. Cao, J. Zuniga-Perez, E. M. Kaidashev, N. Zhakarov, G. Wagner, T. Nobis, C. Czekalla, G. Zimmermann, and M. Grundmann, “Self-organized growth of ZnO-based nano and microstructures,” Phys. Status Solidi B 247(6), 1265–1281 (2010).
[Crossref]

Zuniga-Perez, J.

B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zuniga-Perez, “Fabrication and growth of GaN-based micro and nanostructures,” Int. J. Nanotechnol. 9(3/4/5/6/7), 412–427 (2012).
[Crossref]

C. Czekalla, T. Nobis, A. Rahm, B. Q. Cao, J. Zuniga-Perez, C. Sturm, R. Schmidt-Grund, M. Lorenz, and M. Grundmann, “Whispering-gallery modes in zinc oxide micro- and nanowires,” Phys. Status Solidi B 247(6), 1282–1293 (2010).
[Crossref]

M. Lorenz, A. Rahm, B. Q. Cao, J. Zuniga-Perez, E. M. Kaidashev, N. Zhakarov, G. Wagner, T. Nobis, C. Czekalla, G. Zimmermann, and M. Grundmann, “Self-organized growth of ZnO-based nano and microstructures,” Phys. Status Solidi B 247(6), 1265–1281 (2010).
[Crossref]

Appl. Opt. (1)

Appl. Phys. Express (1)

Y. Higuchi, K. Omae, H. Matsumura, and T. Mukai, “Room-temperature CW lasing of a GaN-based vertical surface-emitting laser by current injection,” Appl. Phys. Express 1, 121102 (2008).
[Crossref]

Appl. Phys. Lett. (9)

D. Simeonov, E. Feltin, A. Altoukhov, A. Castiglia, J. F. Carlin, R. Butté, and N. Grandjean, “High quality nitride based microdisks obtained via selective wet etching of AlInN sacrificial layers,” Appl. Phys. Lett. 92(17), 171102 (2008).
[Crossref]

G. Christmann, R. Butté, E. Feltin, J. F. Carlin, and N. Grandjean, “Room-temperature polariton lasing in a GaN/AlGaN multiple quantum well microcavity,” Appl. Phys. Lett. 93(5), 051102 (2008).
[Crossref]

S. L. McCall, A. F. J. Levi, R. E. Slusher, S. J. Pearton, and R. A. Logan, “Whispering-gallery mode microdisk lasers,” Appl. Phys. Lett. 60(3), 289–291 (1992).
[Crossref]

R. A. Mair, K. C. Zeng, J. Y. Lin, H. X. Jiang, B. Zhang, L. Dai, A. Botchkarev, W. Kim, H. Morkoç, and M. A. Khan, “Optical modes within III-nitrides multiple quantum well microdisk cavities,” Appl. Phys. Lett. 72(13), 1530–1532 (1998).
[Crossref]

S. Chang, N. B. Rex, R. K. Chang, G. Chong, and L. J. Guido, “Stimulated emission and lasing in whispering-gallery mods of GaN microdisck cavities,” Appl. Phys. Lett. 75(2), 166–168 (1999).
[Crossref]

M. J. Bergmann, U. Ozgur, H. C. Casey, H. O. Everitt, and J. F. Muth, “Ordinary and extraordinary refractive indices for AlxGa1-xN epitaxial layers,” Appl. Phys. Lett. 75(1), 67–69 (1999).
[Crossref]

S. Ghosh, P. Waltereit, O. Brandt, H. T. Grahn, and K. H. Ploog, “Polarization-dependent spectroscopic study of M-plane GaN on γ-LiAlO2,” Appl. Phys. Lett. 80(3), 413–415 (2002).
[Crossref]

A. Billeb, W. Grieshaber, D. Stocker, E. F. Schubert, and R. F. Karlicek., “Microcavity effects in GaN epitaxial films and in Ag/GaN/sapphire structures,” Appl. Phys. Lett. 70(21), 2790–2792 (1997).
[Crossref]

Ü. Özgür, G. Webb-Wood, H. O. Everitt, F. Yun, and H. Morkoç, “Systematic measurement of AlxGa1-xN refractive indices,” Appl. Phys. Lett. 79(25), 4103–4105 (2001).
[Crossref]

Int. J. Nanotechnol. (1)

B. Alloing, E. Beraudo, Y. Cordier, F. Semond, S. Sergent, O. Tottereau, P. Vennéguès, S. Vézian, and J. Zuniga-Perez, “Fabrication and growth of GaN-based micro and nanostructures,” Int. J. Nanotechnol. 9(3/4/5/6/7), 412–427 (2012).
[Crossref]

J. Appl. Phys. (4)

C. Hums, T. Finger, T. Hempel, J. Christen, A. Dadgar, A. Hoffmann, and A. Krost, “Fabry-Perot effects in InGaN/GaN heterostructures on Si-substrate,” J. Appl. Phys. 101(3), 033113 (2007).
[Crossref]

N. Antoine-Vincent, F. Natali, M. Mihailovic, A. Vasson, J. Leymarie, P. Disseix, D. Byrne, F. Semond, and J. Massies, “Determination of the refractive indices of AlN, GaN and AlxGa1-xN grown on (111)Si substrates,” J. Appl. Phys. 93(9), 5222–5226 (2003).
[Crossref]

S. Shokhovets, R. Goldhahn, G. Gobsch, S. Piekh, R. Lantier, A. Rizzi, V. Lebedev, and W. Richter, “Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry,” J. Appl. Phys. 94(1), 307–312 (2003).
[Crossref]

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[Crossref]

Mater. Sci. Eng. B (1)

M. Leroux, B. Beaumont, N. Grandjean, P. Lorenzini, S. Haffouz, P. Vennéguès, J. Massies, and P. Gibart, “Luminescence and reflectivity studies of undoped, n- and p-doped GaN on (0001) sapphire,” Mater. Sci. Eng. B 50(1-3), 97–104 (1997).
[Crossref]

Nat. Photonics (1)

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[Crossref]

New J. Phys. (1)

C. P. Dietrich, M. Lange, C. Sturm, R. Schmidt-Grund, and M. Grundmann, “One- and two-dimensional cavity modes in ZnO microwires,” New J. Phys. 13(10), 103021 (2011).
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Opt. Express (1)

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[Crossref]

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Other (2)

A. Trichet, F. Medard, J. Zuniga-Perez, B. Alloing, and M. Richard,“From strong to weak coupling regime in a single GaN microwire up to room temperature,” arXiv 1106.5595 (2011).

E. F. Schubert, Light-Emitting Diodes(Cambridge University Press, 2003), Chap. 9.

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Figures (5)

Fig. 1
Fig. 1 SEM images of typical GaN microwires viewed at 30° (a) and 90° (b) with respect to the wire longitudinal axis. Schematic representation of WGMs (c) and transverse Fabry-Perot modes (d).

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Fig. 2
Fig. 2 Room-temperature (RT) unpolarized μ-PL spectra of microwires with different radii (a), and RT polarization-resolved μ-PL spectra of the microwire with radius 3.25μm (b). The inset in (b) shows an enlarged view of the highlighted area. Energy of the μ-PL maxima (black squares for TE and red circles for TM) for microwires with different radii as a function of the interference order (c). The lines correspond to the WGM dispersion given by Eq. (1).

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Fig. 3
Fig. 3 RT polarization-resolved μ-PL spectra of a microwire with R = 3.39μm (a). The inset shows an enlarged view of the Yellow-band region. Energy of the μ-PL maxima (black crossed squares for TE and red crossed circles for TM) as a function of the interference order (b). The lines correspond to the Fabry-Perot dispersion given by Eq. (2), whereas the dashed lines correspond to the WGMs dispersion given by Eq. (1) for the microwire of similar radius (R = 3.37μm) shown in Fig. 2(c). The Fabry-Perot resonances and fits have been shifted in M ( + 24 for TE modes and + 25 for TM modes, respectively) in order to compare them to the WGM dispersion.

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Fig. 4
Fig. 4 FWHM of modes around 2.35eV,obtained by deconvoluting the PL spectra after background subtraction and averaging over the three modes closer to 2.35eV, as a function of microwire radius for TE- (full and crossed squares correspond to WGMs and Fabry-Perot modes, respectively) (a) and TM-polarized modes (full and crossed circles correspond to WGMs and Fabry-Perot modes, respectively) (b). The curves in (a) and (b), which are just a guide for the eyes, show 1/R and 1/R2 dependencies and were constructed with the same numerical prefactors. SEM images, tilted at 65° with respect to the microwire longitudinal axis, of microwires exhibiting WGMs (c) or Fabry-Perot modes (d) exclusively.

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Fig. 5
Fig. 5 Ordinary (black squares) and extraordinary (red circles) refractive indices extracted from WGMs resonances (a) and their fit with a first-order Sellmeier function (full lines). Inset in (a) shows the same information as in (a) but obtained from Fabry-Perot resonances. Ordinary refractive index obtained from WGMs (black full line) compared to literature values (references 26, 27, 29, 30 and 31). (b). The bars correspond to the systematic error associated to a wrong determination (by one unity) of the interference order. Inset in (b) shows the extraordinary refractive index determined from WGMs (red full line) compared to literature values.

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Tables (1)

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Table 1 Parameters of the first-order Sellmeier functions and validity limits. The numbers in brackets correspond to the errors associated to the fitting procedure (not to the error of the refractive index itself).

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Equations (3)

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E= 1 3 ⋅ hc 2 R i [ M n + 6 π⋅n arctan( β 3 n 2 −4 ) ]
E= 1 2 ⋅ hc d ⋅ M n
n 2 =1+ A⋅ λ 2 λ 2 − λ A 2 + B⋅ λ 2 λ 2 − λ B 2

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