Abstract

Two obvious Gauss peaks are observed in SiNx-based light-emitting devices with silver nanoparticles deposited onto the luminous layer, both of which are blue shifted with the increase of injected current. The origin of these two peaks is discussed by means of the changes of their positions, relative intensities, and full width at half maximum. We attribute the blue-shift of both electroluminescence peaks to the improvement of carrier injection as carriers can be injected into higher energy levels along their corresponding band tails, which is also confirmed by the changes of the transport mechanism.

© 2012 OSA

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  2. R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
    [CrossRef]
  3. G.-R. Lin, Y.-H. Pai, C.-T. Lin, and C.-C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010).
    [CrossRef]
  4. M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNX film. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008).
    [CrossRef]
  5. D. Li, J. Huang, and D. Yang, “Enhanced electroluminescence of silicon-rich silicon nitride light-emitting devices by NH3 plasma and annealing treatment,” Physica E41(6), 920–922 (2009).
    [CrossRef]
  6. Z. H. Cen, T. P. Chen, Z. Liu, Y. Liu, L. Ding, M. Yang, J. I. Wong, S. F. Yu, and W. P. Goh, “Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film,” Opt. Express18(19), 20439–20444 (2010).
    [CrossRef] [PubMed]
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    [CrossRef]
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  11. B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J.-S. Kim, C.-C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater. (Deerfield Beach Fla.)20(16), 3100–3104 (2008).
    [CrossRef]
  12. Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
    [CrossRef]
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    [CrossRef]
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  16. P. Cheng, D. Li, and D. Yang, “Influence of substrates in ZnO devices on the surface plasmon enhanced light emission,” Opt. Express16(12), 8896–8901 (2008).
    [CrossRef] [PubMed]
  17. J. R. Sheats, H. Antoniadis, M. Hueschen, W. Leonard, J. Miller, R. Moon, D. Roitman, and A. Stocking, “Organic electroluminescent devices,” Science273(5277), 884–888 (1996).
    [CrossRef] [PubMed]
  18. E. Jacques, L. Pichon, O. Debieu, and F. Gourbilleau, “Electrical behavior of MIS devices based on silicon nanoclusters embedded in SiOxNy and SiO2 films,” Nanoscale Res. Lett.6(1), 170 (2011).
    [CrossRef] [PubMed]
  19. Y. Yonamoto, Y. Inaba, and N. Akamatsu, “Compositional dependence of trap density and origin in thin silicon oxynitride film investigated using spin dependent Poole–Frenkel current,” Appl. Phys. Lett.98(23), 232905 (2011).
    [CrossRef]
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    [CrossRef] [PubMed]
  23. W. Chandra and L. K. Ang, “Space charge limited current in a gap combined of free space and solid,” Appl. Phys. Lett.96(18), 183501 (2010).
    [CrossRef]
  24. T. Güngör and H. Tolunay, “Drift mobility measurements in a-SiNx: H,” J. Non-Cryst. Solids282(2–3), 197–202 (2001).
    [CrossRef]
  25. T. Shirasawa, K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori, and H. Tochihara, “Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface,” Phys. Rev. Lett.98(13), 136105 (2007).
    [CrossRef] [PubMed]
  26. J. Robertson and M. J. Powell, “Gap states in silicon-nitride,” Appl. Phys. Lett.44(4), 415–417 (1984).
    [CrossRef]

2012 (1)

F. Wang, D. Li, D. Yang, and D. Que, “Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film,” Appl. Phys. Lett.100(3), 031113 (2012).
[CrossRef]

2011 (3)

Z. H. Cen, T. P. Chen, L. Ding, Z. Liu, J. I. Wong, M. Yang, W. P. Goh, and S. Fung, “Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films,” Appl. Phys., A Mater. Sci. Process.104(1), 239–245 (2011).
[CrossRef]

E. Jacques, L. Pichon, O. Debieu, and F. Gourbilleau, “Electrical behavior of MIS devices based on silicon nanoclusters embedded in SiOxNy and SiO2 films,” Nanoscale Res. Lett.6(1), 170 (2011).
[CrossRef] [PubMed]

Y. Yonamoto, Y. Inaba, and N. Akamatsu, “Compositional dependence of trap density and origin in thin silicon oxynitride film investigated using spin dependent Poole–Frenkel current,” Appl. Phys. Lett.98(23), 232905 (2011).
[CrossRef]

2010 (5)

W. Chandra and L. K. Ang, “Space charge limited current in a gap combined of free space and solid,” Appl. Phys. Lett.96(18), 183501 (2010).
[CrossRef]

C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent structures,” Adv. Mater. (Deerfield Beach Fla.)22(44), 5058–5062 (2010).
[CrossRef] [PubMed]

G.-R. Lin, Y.-H. Pai, C.-T. Lin, and C.-C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010).
[CrossRef]

R. Huang, D. Q. Wang, H. L. Ding, X. Wang, K. J. Chen, J. Xu, Y. Q. Guo, J. Song, and Z. Y. Ma, “Enhanced electroluminescence from SiN-based multilayer structure by laser crystallization of ultrathin amorphous Si-rich SiN layers,” Opt. Express18(2), 1144–1150 (2010).
[CrossRef] [PubMed]

Z. H. Cen, T. P. Chen, Z. Liu, Y. Liu, L. Ding, M. Yang, J. I. Wong, S. F. Yu, and W. P. Goh, “Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film,” Opt. Express18(19), 20439–20444 (2010).
[CrossRef] [PubMed]

2009 (2)

D. Li, J. Huang, and D. Yang, “Enhanced electroluminescence of silicon-rich silicon nitride light-emitting devices by NH3 plasma and annealing treatment,” Physica E41(6), 920–922 (2009).
[CrossRef]

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

2008 (5)

J. Warga, R. Li, S. N. Basu, and L. Dal Negro, “Electroluminescence from silicon-rich nitride/silicon superlattice structures,” Appl. Phys. Lett.93(15), 151116 (2008).
[CrossRef]

B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J.-S. Kim, C.-C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater. (Deerfield Beach Fla.)20(16), 3100–3104 (2008).
[CrossRef]

P. Cheng, D. Li, and D. Yang, “Influence of substrates in ZnO devices on the surface plasmon enhanced light emission,” Opt. Express16(12), 8896–8901 (2008).
[CrossRef] [PubMed]

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNX film. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008).
[CrossRef]

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

2007 (1)

T. Shirasawa, K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori, and H. Tochihara, “Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface,” Phys. Rev. Lett.98(13), 136105 (2007).
[CrossRef] [PubMed]

2006 (1)

B.-H. Kim, C.-H. Cho, S.-J. Park, N.-M. Park, and G. Y. Sung, “Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency,” Appl. Phys. Lett.89(6), 063509 (2006).
[CrossRef]

2003 (1)

W. L. Barnes, A. Dereux, and T. W. Ebbesen, “Surface plasmon subwavelength optics,” Nature424(6950), 824–830 (2003).
[CrossRef] [PubMed]

2001 (2)

N.-M. Park, C.-J. Choi, T.-Y. Seong, and S.-J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001).
[CrossRef] [PubMed]

T. Güngör and H. Tolunay, “Drift mobility measurements in a-SiNx: H,” J. Non-Cryst. Solids282(2–3), 197–202 (2001).
[CrossRef]

1996 (1)

J. R. Sheats, H. Antoniadis, M. Hueschen, W. Leonard, J. Miller, R. Moon, D. Roitman, and A. Stocking, “Organic electroluminescent devices,” Science273(5277), 884–888 (1996).
[CrossRef] [PubMed]

1993 (1)

A. A. Middleton and N. S. Wingreen, “Collective transport in arrays of small metallic dots,” Phys. Rev. Lett.71(19), 3198–3201 (1993).
[CrossRef] [PubMed]

1984 (1)

J. Robertson and M. J. Powell, “Gap states in silicon-nitride,” Appl. Phys. Lett.44(4), 415–417 (1984).
[CrossRef]

1967 (1)

S. M. Sze, “Current transport and maximum dielectric strength of silicon nitride,” J. Appl. Phys.38(7), 2951–2956 (1967).
[CrossRef]

Akamatsu, N.

Y. Yonamoto, Y. Inaba, and N. Akamatsu, “Compositional dependence of trap density and origin in thin silicon oxynitride film investigated using spin dependent Poole–Frenkel current,” Appl. Phys. Lett.98(23), 232905 (2011).
[CrossRef]

Ang, L. K.

W. Chandra and L. K. Ang, “Space charge limited current in a gap combined of free space and solid,” Appl. Phys. Lett.96(18), 183501 (2010).
[CrossRef]

Anopchenko, A.

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNX film. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008).
[CrossRef]

Antoniadis, H.

J. R. Sheats, H. Antoniadis, M. Hueschen, W. Leonard, J. Miller, R. Moon, D. Roitman, and A. Stocking, “Organic electroluminescent devices,” Science273(5277), 884–888 (1996).
[CrossRef] [PubMed]

Barnes, W. L.

W. L. Barnes, A. Dereux, and T. W. Ebbesen, “Surface plasmon subwavelength optics,” Nature424(6950), 824–830 (2003).
[CrossRef] [PubMed]

Basu, S. N.

J. Warga, R. Li, S. N. Basu, and L. Dal Negro, “Electroluminescence from silicon-rich nitride/silicon superlattice structures,” Appl. Phys. Lett.93(15), 151116 (2008).
[CrossRef]

Byeon, C.-C.

B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J.-S. Kim, C.-C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater. (Deerfield Beach Fla.)20(16), 3100–3104 (2008).
[CrossRef]

Cen, Z. H.

Z. H. Cen, T. P. Chen, L. Ding, Z. Liu, J. I. Wong, M. Yang, W. P. Goh, and S. Fung, “Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films,” Appl. Phys., A Mater. Sci. Process.104(1), 239–245 (2011).
[CrossRef]

Z. H. Cen, T. P. Chen, Z. Liu, Y. Liu, L. Ding, M. Yang, J. I. Wong, S. F. Yu, and W. P. Goh, “Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film,” Opt. Express18(19), 20439–20444 (2010).
[CrossRef] [PubMed]

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Chandra, W.

W. Chandra and L. K. Ang, “Space charge limited current in a gap combined of free space and solid,” Appl. Phys. Lett.96(18), 183501 (2010).
[CrossRef]

Chen, C.-C.

G.-R. Lin, Y.-H. Pai, C.-T. Lin, and C.-C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010).
[CrossRef]

Chen, K.

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

Chen, K. J.

Chen, T. P.

Z. H. Cen, T. P. Chen, L. Ding, Z. Liu, J. I. Wong, M. Yang, W. P. Goh, and S. Fung, “Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films,” Appl. Phys., A Mater. Sci. Process.104(1), 239–245 (2011).
[CrossRef]

Z. H. Cen, T. P. Chen, Z. Liu, Y. Liu, L. Ding, M. Yang, J. I. Wong, S. F. Yu, and W. P. Goh, “Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film,” Opt. Express18(19), 20439–20444 (2010).
[CrossRef] [PubMed]

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Cheng, P.

Cho, C.-H.

B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J.-S. Kim, C.-C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater. (Deerfield Beach Fla.)20(16), 3100–3104 (2008).
[CrossRef]

B.-H. Kim, C.-H. Cho, S.-J. Park, N.-M. Park, and G. Y. Sung, “Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency,” Appl. Phys. Lett.89(6), 063509 (2006).
[CrossRef]

Choi, C.-J.

C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent structures,” Adv. Mater. (Deerfield Beach Fla.)22(44), 5058–5062 (2010).
[CrossRef] [PubMed]

N.-M. Park, C.-J. Choi, T.-Y. Seong, and S.-J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001).
[CrossRef] [PubMed]

Dal Negro, L.

J. Warga, R. Li, S. N. Basu, and L. Dal Negro, “Electroluminescence from silicon-rich nitride/silicon superlattice structures,” Appl. Phys. Lett.93(15), 151116 (2008).
[CrossRef]

Debieu, O.

E. Jacques, L. Pichon, O. Debieu, and F. Gourbilleau, “Electrical behavior of MIS devices based on silicon nanoclusters embedded in SiOxNy and SiO2 films,” Nanoscale Res. Lett.6(1), 170 (2011).
[CrossRef] [PubMed]

Dereux, A.

W. L. Barnes, A. Dereux, and T. W. Ebbesen, “Surface plasmon subwavelength optics,” Nature424(6950), 824–830 (2003).
[CrossRef] [PubMed]

Ding, H.

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

Ding, H. L.

Ding, L.

Z. H. Cen, T. P. Chen, L. Ding, Z. Liu, J. I. Wong, M. Yang, W. P. Goh, and S. Fung, “Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films,” Appl. Phys., A Mater. Sci. Process.104(1), 239–245 (2011).
[CrossRef]

Z. H. Cen, T. P. Chen, Z. Liu, Y. Liu, L. Ding, M. Yang, J. I. Wong, S. F. Yu, and W. P. Goh, “Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film,” Opt. Express18(19), 20439–20444 (2010).
[CrossRef] [PubMed]

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Dong, H.

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

Ebbesen, T. W.

W. L. Barnes, A. Dereux, and T. W. Ebbesen, “Surface plasmon subwavelength optics,” Nature424(6950), 824–830 (2003).
[CrossRef] [PubMed]

Fung, S.

Z. H. Cen, T. P. Chen, L. Ding, Z. Liu, J. I. Wong, M. Yang, W. P. Goh, and S. Fung, “Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films,” Appl. Phys., A Mater. Sci. Process.104(1), 239–245 (2011).
[CrossRef]

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Goh, W. P.

Z. H. Cen, T. P. Chen, L. Ding, Z. Liu, J. I. Wong, M. Yang, W. P. Goh, and S. Fung, “Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films,” Appl. Phys., A Mater. Sci. Process.104(1), 239–245 (2011).
[CrossRef]

Z. H. Cen, T. P. Chen, Z. Liu, Y. Liu, L. Ding, M. Yang, J. I. Wong, S. F. Yu, and W. P. Goh, “Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film,” Opt. Express18(19), 20439–20444 (2010).
[CrossRef] [PubMed]

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Gourbilleau, F.

E. Jacques, L. Pichon, O. Debieu, and F. Gourbilleau, “Electrical behavior of MIS devices based on silicon nanoclusters embedded in SiOxNy and SiO2 films,” Nanoscale Res. Lett.6(1), 170 (2011).
[CrossRef] [PubMed]

Güngör, T.

T. Güngör and H. Tolunay, “Drift mobility measurements in a-SiNx: H,” J. Non-Cryst. Solids282(2–3), 197–202 (2001).
[CrossRef]

Guo, Y. Q.

Hayashi, K.

T. Shirasawa, K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori, and H. Tochihara, “Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface,” Phys. Rev. Lett.98(13), 136105 (2007).
[CrossRef] [PubMed]

Huang, J.

D. Li, J. Huang, and D. Yang, “Enhanced electroluminescence of silicon-rich silicon nitride light-emitting devices by NH3 plasma and annealing treatment,” Physica E41(6), 920–922 (2009).
[CrossRef]

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNX film. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008).
[CrossRef]

Huang, R.

R. Huang, D. Q. Wang, H. L. Ding, X. Wang, K. J. Chen, J. Xu, Y. Q. Guo, J. Song, and Z. Y. Ma, “Enhanced electroluminescence from SiN-based multilayer structure by laser crystallization of ultrathin amorphous Si-rich SiN layers,” Opt. Express18(2), 1144–1150 (2010).
[CrossRef] [PubMed]

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

Hueschen, M.

J. R. Sheats, H. Antoniadis, M. Hueschen, W. Leonard, J. Miller, R. Moon, D. Roitman, and A. Stocking, “Organic electroluminescent devices,” Science273(5277), 884–888 (1996).
[CrossRef] [PubMed]

Huh, C.

C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent structures,” Adv. Mater. (Deerfield Beach Fla.)22(44), 5058–5062 (2010).
[CrossRef] [PubMed]

Inaba, Y.

Y. Yonamoto, Y. Inaba, and N. Akamatsu, “Compositional dependence of trap density and origin in thin silicon oxynitride film investigated using spin dependent Poole–Frenkel current,” Appl. Phys. Lett.98(23), 232905 (2011).
[CrossRef]

Jacques, E.

E. Jacques, L. Pichon, O. Debieu, and F. Gourbilleau, “Electrical behavior of MIS devices based on silicon nanoclusters embedded in SiOxNy and SiO2 films,” Nanoscale Res. Lett.6(1), 170 (2011).
[CrossRef] [PubMed]

Kim, B. K.

C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent structures,” Adv. Mater. (Deerfield Beach Fla.)22(44), 5058–5062 (2010).
[CrossRef] [PubMed]

Kim, B.-H.

B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J.-S. Kim, C.-C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater. (Deerfield Beach Fla.)20(16), 3100–3104 (2008).
[CrossRef]

B.-H. Kim, C.-H. Cho, S.-J. Park, N.-M. Park, and G. Y. Sung, “Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency,” Appl. Phys. Lett.89(6), 063509 (2006).
[CrossRef]

Kim, J.-S.

B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J.-S. Kim, C.-C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater. (Deerfield Beach Fla.)20(16), 3100–3104 (2008).
[CrossRef]

Kim, K.-H.

C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent structures,” Adv. Mater. (Deerfield Beach Fla.)22(44), 5058–5062 (2010).
[CrossRef] [PubMed]

Kim, W.

C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent structures,” Adv. Mater. (Deerfield Beach Fla.)22(44), 5058–5062 (2010).
[CrossRef] [PubMed]

Ko, H.

C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent structures,” Adv. Mater. (Deerfield Beach Fla.)22(44), 5058–5062 (2010).
[CrossRef] [PubMed]

Komori, F.

T. Shirasawa, K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori, and H. Tochihara, “Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface,” Phys. Rev. Lett.98(13), 136105 (2007).
[CrossRef] [PubMed]

Kwon, M.-K.

B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J.-S. Kim, C.-C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater. (Deerfield Beach Fla.)20(16), 3100–3104 (2008).
[CrossRef]

Lee, J.

B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J.-S. Kim, C.-C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater. (Deerfield Beach Fla.)20(16), 3100–3104 (2008).
[CrossRef]

Leonard, W.

J. R. Sheats, H. Antoniadis, M. Hueschen, W. Leonard, J. Miller, R. Moon, D. Roitman, and A. Stocking, “Organic electroluminescent devices,” Science273(5277), 884–888 (1996).
[CrossRef] [PubMed]

Li, D.

F. Wang, D. Li, D. Yang, and D. Que, “Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film,” Appl. Phys. Lett.100(3), 031113 (2012).
[CrossRef]

D. Li, J. Huang, and D. Yang, “Enhanced electroluminescence of silicon-rich silicon nitride light-emitting devices by NH3 plasma and annealing treatment,” Physica E41(6), 920–922 (2009).
[CrossRef]

P. Cheng, D. Li, and D. Yang, “Influence of substrates in ZnO devices on the surface plasmon enhanced light emission,” Opt. Express16(12), 8896–8901 (2008).
[CrossRef] [PubMed]

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNX film. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008).
[CrossRef]

Li, R.

J. Warga, R. Li, S. N. Basu, and L. Dal Negro, “Electroluminescence from silicon-rich nitride/silicon superlattice structures,” Appl. Phys. Lett.93(15), 151116 (2008).
[CrossRef]

Li, W.

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

Lin, C.-T.

G.-R. Lin, Y.-H. Pai, C.-T. Lin, and C.-C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010).
[CrossRef]

Lin, G.-R.

G.-R. Lin, Y.-H. Pai, C.-T. Lin, and C.-C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010).
[CrossRef]

Liu, Y.

Z. H. Cen, T. P. Chen, Z. Liu, Y. Liu, L. Ding, M. Yang, J. I. Wong, S. F. Yu, and W. P. Goh, “Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film,” Opt. Express18(19), 20439–20444 (2010).
[CrossRef] [PubMed]

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Liu, Z.

Z. H. Cen, T. P. Chen, L. Ding, Z. Liu, J. I. Wong, M. Yang, W. P. Goh, and S. Fung, “Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films,” Appl. Phys., A Mater. Sci. Process.104(1), 239–245 (2011).
[CrossRef]

Z. H. Cen, T. P. Chen, Z. Liu, Y. Liu, L. Ding, M. Yang, J. I. Wong, S. F. Yu, and W. P. Goh, “Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film,” Opt. Express18(19), 20439–20444 (2010).
[CrossRef] [PubMed]

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Ma, Z.

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

Ma, Z. Y.

Middleton, A. A.

A. A. Middleton and N. S. Wingreen, “Collective transport in arrays of small metallic dots,” Phys. Rev. Lett.71(19), 3198–3201 (1993).
[CrossRef] [PubMed]

Miller, J.

J. R. Sheats, H. Antoniadis, M. Hueschen, W. Leonard, J. Miller, R. Moon, D. Roitman, and A. Stocking, “Organic electroluminescent devices,” Science273(5277), 884–888 (1996).
[CrossRef] [PubMed]

Mizuno, S.

T. Shirasawa, K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori, and H. Tochihara, “Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface,” Phys. Rev. Lett.98(13), 136105 (2007).
[CrossRef] [PubMed]

Moon, R.

J. R. Sheats, H. Antoniadis, M. Hueschen, W. Leonard, J. Miller, R. Moon, D. Roitman, and A. Stocking, “Organic electroluminescent devices,” Science273(5277), 884–888 (1996).
[CrossRef] [PubMed]

Mun, J.-S.

B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J.-S. Kim, C.-C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater. (Deerfield Beach Fla.)20(16), 3100–3104 (2008).
[CrossRef]

Nakatsuji, K.

T. Shirasawa, K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori, and H. Tochihara, “Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface,” Phys. Rev. Lett.98(13), 136105 (2007).
[CrossRef] [PubMed]

Pai, Y.-H.

G.-R. Lin, Y.-H. Pai, C.-T. Lin, and C.-C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010).
[CrossRef]

Park, N.-M.

B.-H. Kim, C.-H. Cho, S.-J. Park, N.-M. Park, and G. Y. Sung, “Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency,” Appl. Phys. Lett.89(6), 063509 (2006).
[CrossRef]

N.-M. Park, C.-J. Choi, T.-Y. Seong, and S.-J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001).
[CrossRef] [PubMed]

Park, S.-J.

B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J.-S. Kim, C.-C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater. (Deerfield Beach Fla.)20(16), 3100–3104 (2008).
[CrossRef]

B.-H. Kim, C.-H. Cho, S.-J. Park, N.-M. Park, and G. Y. Sung, “Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency,” Appl. Phys. Lett.89(6), 063509 (2006).
[CrossRef]

N.-M. Park, C.-J. Choi, T.-Y. Seong, and S.-J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001).
[CrossRef] [PubMed]

Park, T.-Y.

B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J.-S. Kim, C.-C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater. (Deerfield Beach Fla.)20(16), 3100–3104 (2008).
[CrossRef]

Pavesi, L.

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNX film. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008).
[CrossRef]

Pichon, L.

E. Jacques, L. Pichon, O. Debieu, and F. Gourbilleau, “Electrical behavior of MIS devices based on silicon nanoclusters embedded in SiOxNy and SiO2 films,” Nanoscale Res. Lett.6(1), 170 (2011).
[CrossRef] [PubMed]

Powell, M. J.

J. Robertson and M. J. Powell, “Gap states in silicon-nitride,” Appl. Phys. Lett.44(4), 415–417 (1984).
[CrossRef]

Que, D.

F. Wang, D. Li, D. Yang, and D. Que, “Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film,” Appl. Phys. Lett.100(3), 031113 (2012).
[CrossRef]

Robertson, J.

J. Robertson and M. J. Powell, “Gap states in silicon-nitride,” Appl. Phys. Lett.44(4), 415–417 (1984).
[CrossRef]

Roitman, D.

J. R. Sheats, H. Antoniadis, M. Hueschen, W. Leonard, J. Miller, R. Moon, D. Roitman, and A. Stocking, “Organic electroluminescent devices,” Science273(5277), 884–888 (1996).
[CrossRef] [PubMed]

Seong, T.-Y.

N.-M. Park, C.-J. Choi, T.-Y. Seong, and S.-J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001).
[CrossRef] [PubMed]

Sheats, J. R.

J. R. Sheats, H. Antoniadis, M. Hueschen, W. Leonard, J. Miller, R. Moon, D. Roitman, and A. Stocking, “Organic electroluminescent devices,” Science273(5277), 884–888 (1996).
[CrossRef] [PubMed]

Shirasawa, T.

T. Shirasawa, K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori, and H. Tochihara, “Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface,” Phys. Rev. Lett.98(13), 136105 (2007).
[CrossRef] [PubMed]

Song, J.

Stocking, A.

J. R. Sheats, H. Antoniadis, M. Hueschen, W. Leonard, J. Miller, R. Moon, D. Roitman, and A. Stocking, “Organic electroluminescent devices,” Science273(5277), 884–888 (1996).
[CrossRef] [PubMed]

Sung, G. Y.

C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent structures,” Adv. Mater. (Deerfield Beach Fla.)22(44), 5058–5062 (2010).
[CrossRef] [PubMed]

B.-H. Kim, C.-H. Cho, S.-J. Park, N.-M. Park, and G. Y. Sung, “Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency,” Appl. Phys. Lett.89(6), 063509 (2006).
[CrossRef]

Sze, S. M.

S. M. Sze, “Current transport and maximum dielectric strength of silicon nitride,” J. Appl. Phys.38(7), 2951–2956 (1967).
[CrossRef]

Tanaka, S.

T. Shirasawa, K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori, and H. Tochihara, “Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface,” Phys. Rev. Lett.98(13), 136105 (2007).
[CrossRef] [PubMed]

Tochihara, H.

T. Shirasawa, K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori, and H. Tochihara, “Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface,” Phys. Rev. Lett.98(13), 136105 (2007).
[CrossRef] [PubMed]

Tolunay, H.

T. Güngör and H. Tolunay, “Drift mobility measurements in a-SiNx: H,” J. Non-Cryst. Solids282(2–3), 197–202 (2001).
[CrossRef]

Wang, D.

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

Wang, D. Q.

Wang, F.

F. Wang, D. Li, D. Yang, and D. Que, “Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film,” Appl. Phys. Lett.100(3), 031113 (2012).
[CrossRef]

Wang, M.

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNX film. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008).
[CrossRef]

Wang, X.

R. Huang, D. Q. Wang, H. L. Ding, X. Wang, K. J. Chen, J. Xu, Y. Q. Guo, J. Song, and Z. Y. Ma, “Enhanced electroluminescence from SiN-based multilayer structure by laser crystallization of ultrathin amorphous Si-rich SiN layers,” Opt. Express18(2), 1144–1150 (2010).
[CrossRef] [PubMed]

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

Warga, J.

J. Warga, R. Li, S. N. Basu, and L. Dal Negro, “Electroluminescence from silicon-rich nitride/silicon superlattice structures,” Appl. Phys. Lett.93(15), 151116 (2008).
[CrossRef]

Wingreen, N. S.

A. A. Middleton and N. S. Wingreen, “Collective transport in arrays of small metallic dots,” Phys. Rev. Lett.71(19), 3198–3201 (1993).
[CrossRef] [PubMed]

Wong, J. I.

Z. H. Cen, T. P. Chen, L. Ding, Z. Liu, J. I. Wong, M. Yang, W. P. Goh, and S. Fung, “Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films,” Appl. Phys., A Mater. Sci. Process.104(1), 239–245 (2011).
[CrossRef]

Z. H. Cen, T. P. Chen, Z. Liu, Y. Liu, L. Ding, M. Yang, J. I. Wong, S. F. Yu, and W. P. Goh, “Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film,” Opt. Express18(19), 20439–20444 (2010).
[CrossRef] [PubMed]

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Xu, J.

R. Huang, D. Q. Wang, H. L. Ding, X. Wang, K. J. Chen, J. Xu, Y. Q. Guo, J. Song, and Z. Y. Ma, “Enhanced electroluminescence from SiN-based multilayer structure by laser crystallization of ultrathin amorphous Si-rich SiN layers,” Opt. Express18(2), 1144–1150 (2010).
[CrossRef] [PubMed]

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

Yang, D.

F. Wang, D. Li, D. Yang, and D. Que, “Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film,” Appl. Phys. Lett.100(3), 031113 (2012).
[CrossRef]

D. Li, J. Huang, and D. Yang, “Enhanced electroluminescence of silicon-rich silicon nitride light-emitting devices by NH3 plasma and annealing treatment,” Physica E41(6), 920–922 (2009).
[CrossRef]

P. Cheng, D. Li, and D. Yang, “Influence of substrates in ZnO devices on the surface plasmon enhanced light emission,” Opt. Express16(12), 8896–8901 (2008).
[CrossRef] [PubMed]

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNX film. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008).
[CrossRef]

Yang, M.

Z. H. Cen, T. P. Chen, L. Ding, Z. Liu, J. I. Wong, M. Yang, W. P. Goh, and S. Fung, “Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films,” Appl. Phys., A Mater. Sci. Process.104(1), 239–245 (2011).
[CrossRef]

Z. H. Cen, T. P. Chen, Z. Liu, Y. Liu, L. Ding, M. Yang, J. I. Wong, S. F. Yu, and W. P. Goh, “Electrically tunable white-color electroluminescence from Si-implanted silicon nitride thin film,” Opt. Express18(19), 20439–20444 (2010).
[CrossRef] [PubMed]

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Yonamoto, Y.

Y. Yonamoto, Y. Inaba, and N. Akamatsu, “Compositional dependence of trap density and origin in thin silicon oxynitride film investigated using spin dependent Poole–Frenkel current,” Appl. Phys. Lett.98(23), 232905 (2011).
[CrossRef]

Yu, S. F.

Yuan, Z.

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNX film. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008).
[CrossRef]

Zhu, F. R.

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

Adv. Mater. (Deerfield Beach Fla.) (2)

C. Huh, K.-H. Kim, B. K. Kim, W. Kim, H. Ko, C.-J. Choi, and G. Y. Sung, “Enhancement in light emission efficiency of a silicon nanocrystal light-emitting diode by multiple-luminescent structures,” Adv. Mater. (Deerfield Beach Fla.)22(44), 5058–5062 (2010).
[CrossRef] [PubMed]

B.-H. Kim, C.-H. Cho, J.-S. Mun, M.-K. Kwon, T.-Y. Park, J.-S. Kim, C.-C. Byeon, J. Lee, and S.-J. Park, “Enhancement of the external quantum efficiency of a silicon quantum dot light-emitting diode by localized surface plasmons,” Adv. Mater. (Deerfield Beach Fla.)20(16), 3100–3104 (2008).
[CrossRef]

Appl. Phys. Lett. (9)

Z. H. Cen, T. P. Chen, L. Ding, Y. Liu, J. I. Wong, M. Yang, Z. Liu, W. P. Goh, F. R. Zhu, and S. Fung, “Strong violet and green-yellow electroluminescence from silicon nitride thin films multiply implanted with Si ions,” Appl. Phys. Lett.94(4), 041102 (2009).
[CrossRef]

B.-H. Kim, C.-H. Cho, S.-J. Park, N.-M. Park, and G. Y. Sung, “Ni/Au contact to silicon quantum dot light-emitting diodes for the enhancement of carrier injection and light extraction efficiency,” Appl. Phys. Lett.89(6), 063509 (2006).
[CrossRef]

J. Warga, R. Li, S. N. Basu, and L. Dal Negro, “Electroluminescence from silicon-rich nitride/silicon superlattice structures,” Appl. Phys. Lett.93(15), 151116 (2008).
[CrossRef]

F. Wang, D. Li, D. Yang, and D. Que, “Enhancement of light-extraction efficiency of SiNx light emitting devices through a rough Ag island film,” Appl. Phys. Lett.100(3), 031113 (2012).
[CrossRef]

Y. Yonamoto, Y. Inaba, and N. Akamatsu, “Compositional dependence of trap density and origin in thin silicon oxynitride film investigated using spin dependent Poole–Frenkel current,” Appl. Phys. Lett.98(23), 232905 (2011).
[CrossRef]

W. Chandra and L. K. Ang, “Space charge limited current in a gap combined of free space and solid,” Appl. Phys. Lett.96(18), 183501 (2010).
[CrossRef]

R. Huang, H. Dong, D. Wang, K. Chen, H. Ding, X. Wang, W. Li, J. Xu, and Z. Ma, “Role of barrier layers in electroluminescence from SiN-based multilayer light-emitting devices,” Appl. Phys. Lett.92(18), 181106 (2008).
[CrossRef]

G.-R. Lin, Y.-H. Pai, C.-T. Lin, and C.-C. Chen, “Comparison on the electroluminescence of Si-rich SiNx and SiOx based light-emitting diodes,” Appl. Phys. Lett.96(26), 263514 (2010).
[CrossRef]

J. Robertson and M. J. Powell, “Gap states in silicon-nitride,” Appl. Phys. Lett.44(4), 415–417 (1984).
[CrossRef]

Appl. Phys., A Mater. Sci. Process. (1)

Z. H. Cen, T. P. Chen, L. Ding, Z. Liu, J. I. Wong, M. Yang, W. P. Goh, and S. Fung, “Influence of implantation dose on electroluminescence from Si-implanted silicon nitride thin films,” Appl. Phys., A Mater. Sci. Process.104(1), 239–245 (2011).
[CrossRef]

J. Appl. Phys. (2)

S. M. Sze, “Current transport and maximum dielectric strength of silicon nitride,” J. Appl. Phys.38(7), 2951–2956 (1967).
[CrossRef]

M. Wang, J. Huang, Z. Yuan, A. Anopchenko, D. Li, D. Yang, and L. Pavesi, “Light emission properties and mechanism of low-temperature prepared amorphous SiNX film. II. Defect states electroluminescence,” J. Appl. Phys.104(8), 083505 (2008).
[CrossRef]

J. Non-Cryst. Solids (1)

T. Güngör and H. Tolunay, “Drift mobility measurements in a-SiNx: H,” J. Non-Cryst. Solids282(2–3), 197–202 (2001).
[CrossRef]

Nanoscale Res. Lett. (1)

E. Jacques, L. Pichon, O. Debieu, and F. Gourbilleau, “Electrical behavior of MIS devices based on silicon nanoclusters embedded in SiOxNy and SiO2 films,” Nanoscale Res. Lett.6(1), 170 (2011).
[CrossRef] [PubMed]

Nature (1)

W. L. Barnes, A. Dereux, and T. W. Ebbesen, “Surface plasmon subwavelength optics,” Nature424(6950), 824–830 (2003).
[CrossRef] [PubMed]

Opt. Express (3)

Phys. Rev. Lett. (3)

N.-M. Park, C.-J. Choi, T.-Y. Seong, and S.-J. Park, “Quantum confinement in amorphous silicon quantum dots embedded in silicon nitride,” Phys. Rev. Lett.86(7), 1355–1357 (2001).
[CrossRef] [PubMed]

A. A. Middleton and N. S. Wingreen, “Collective transport in arrays of small metallic dots,” Phys. Rev. Lett.71(19), 3198–3201 (1993).
[CrossRef] [PubMed]

T. Shirasawa, K. Hayashi, S. Mizuno, S. Tanaka, K. Nakatsuji, F. Komori, and H. Tochihara, “Epitaxial silicon oxynitride layer on a 6H-SiC(0001) surface,” Phys. Rev. Lett.98(13), 136105 (2007).
[CrossRef] [PubMed]

Physica E (1)

D. Li, J. Huang, and D. Yang, “Enhanced electroluminescence of silicon-rich silicon nitride light-emitting devices by NH3 plasma and annealing treatment,” Physica E41(6), 920–922 (2009).
[CrossRef]

Science (1)

J. R. Sheats, H. Antoniadis, M. Hueschen, W. Leonard, J. Miller, R. Moon, D. Roitman, and A. Stocking, “Organic electroluminescent devices,” Science273(5277), 884–888 (1996).
[CrossRef] [PubMed]

Other (1)

D. A. Neamen, Semiconductor Physics and Devices: Basic Principles, 3rd ed. (McGraw-Hill, 2003).

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Figures (4)

Fig. 1
Fig. 1

EL spectra of the SiNx-based LEDs with and without Ag island film deposited onto the luminous layer, injected by different currents.

Fig. 2
Fig. 2

(a) The dependence of EL peak (PR) position on the injected current for the SiNx-based LED without Ag island film. (b) The dependence of EL peak positions (left) and IP1/IP2 (right) on the injected current for the SiNx-based LED with Ag island film, where IP1 and IP2 stand for the integrated area of the Gauss peak1 (P1) and peak2 (P2), respectively. (c) The dependence of full width at half maximum (FWHM) of EL peaks on the injected current for SiNx-based LEDs with and without Ag island film. (d) Plots of Δλ vs. λ2 accompanied with its linear fittings.

Fig. 3
Fig. 3

Plots of (a) J-V; (b) Poole-Frenkel (P-F); and (c) Power law (P-L) based on the SiNx-based LEDs with Ag island film. Inset of (a) is the schematic diagram of SiNx-based LED structure with Ag island film.

Fig. 4
Fig. 4

Band diagram of the SiNx-based LED under forward bias.

Equations (3)

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J PF =CEexp{q[ ϕ B ( qE/п ε r ε 0 ) 1/2 ]/kT}
J=9 ε r ε 0 μ E 2 /8d
N t =2 ε r ε 0 V TFL /( q d 2 )

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