Abstract

The effect of the nanosecond laser annealing on the photoluminescence (PL) property of phosphorus ions (P+) implanted ZnOnanorods (NRs) has been investigated. The nanosecond laser annealing was performed with the third harmonic of a Q-switched Nd:YAG laser (355nm, 10ns/pulse) at a fluence of 100mJ/cm2. It turned out that nanosecond laser annealing is more effective in the recovery of the PL property compared with the thermal annealing using an electric furnace. As the results, the I-V characteristics of the p-n homojunctions along ZnO NRs showed rectifying property with a threshold voltage of approximately 6V.

© 2012 OSA

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  1. R. Q. Guo, J. Nishimura, M. Matsumoto, D. Nakamura, and T. Okada, “Catalyst-free synthesis of vertically-aligned ZnO nanowires by nanoparticle-assisted pulsed laser deposition,” Appl. Phys., A Mater. Sci. Process. 93(4), 843–847 (2008).
  2. S. F. Yu, C. Yuen, S. P. Lau, W. I. Park, and G. C. Yi, “Random laser action in ZnO nanorod arrays embedded in ZnO epilayers,” Appl. Phys. Lett. 84(17), 3241–3243 (2004).
  3. E. S. P. Leong and S. F. Yu, “UV Random Lasing Action in p-SiC(4H)/i-ZnO–SiO2 Nanocomposite/n-ZnO:Al Heterojunction Diodes,” Adv. Mater.  18(13), 1685–1688 (2006).
  4. S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).
  5. K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultravioletlight-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).
  6. M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, “Near UV LEDs Made with in Situ Doped p-n Homojunction ZnO Nanowire Arrays,” Nano Lett. 10(11), 4387–4393 (2010).
  7. X. W. Sun, B. Ling, J. L. Zhao, S. T. Tan, Y. Yang, Y. Q. Shen, Z. L. Dong, and X. C. Li, “Ultraviolet emission from a ZnO rod homojunction light-emitting diode,” Appl. Phys. Lett. 95(13), 133124 (2009).
  8. V. Vaithianathan, B. T. Lee, and S. S. Kim, “Pulsed-laser-deposited p-type ZnO films with phosphorus doping,” J. Appl. Phys. 98(4), 043519 (2005).
  9. T. Aoki, Y. Shimizu, A. Miyake, A. Nakamura, Y. Nakanishi, and Y. Hatanaka, “p-Type ZnO Layer Formation by Excimer Laser Doping,” Phys. Status Solidi B 229(2), 911–914 (2002).
  10. E. S. Kumar, J. Chatterjee, N. Rama, N. DasGupta, and M. S. R. Rao, “A Co doping Route to Realize Low Resistive and Stable p-Type Conduction in (Li,Ni)-ZnO Thin Films Grown by Pulsed Laser Deposition,” ACS Appl. Mater. Interfaces 3(6), 1974–1979 (2011).
  11. D. Nakamura, A. Kumeda, K. Toya, K. Okazaki, K. Kubo, K. Tsuta, M. Higashihata, and T. Okada, “Synthesis of Layer-Structured ZnO Nano-Crystals by Nanoparticle-Assisted Pulsed Laser Deposition,” Proc. SPIE 7940, 990–992 (2011).
  12. K. Sakai, S. Oyama, K. Noguchi, A. Fukuyama, T. Ikari, and T. Okada, “Optical properties of nanostructured ZnO crystal synthesized by pulsed-laser ablation,” Physica E 40(7), 2489–2493 (2008).
  13. A. Janotti and C. G. V. d. Walle, “Oxygen vacancies in ZnO,” Appl. Phys. Lett. 87, 122102 (2005).
  14. Z. Q. Chen, A. Kawasuso, Y. Xu, H. N. H. Yan, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira, “Production and recovery of defects in phosphorus-implanted ZnO,” J. Appl. Phys. 97, 013528 (2005).
  15. J. Maeng, S. Heo, G. Jo, M. Choe, S. Kim, H. Hwang, and T. Lee, “The effect of excimer laser annealing on ZnO nanowires and their field effect transistors,” Nanotechnology 20(9), 095203 (2009).
  16. L. J. Brillson and Y. Lu, “ZnO Schottky barriers and Ohmic contacts,” J. Appl. Phys. 109(12), 121301 (2011).
  17. Y. Zhao and Y. Jiang, “Effect of KrF excimer laser irradiation on the properties of ZnO thin films,” J. Appl. Phys. 103(11), 114903 (2008).
    [CrossRef]

2011 (4)

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).

E. S. Kumar, J. Chatterjee, N. Rama, N. DasGupta, and M. S. R. Rao, “A Co doping Route to Realize Low Resistive and Stable p-Type Conduction in (Li,Ni)-ZnO Thin Films Grown by Pulsed Laser Deposition,” ACS Appl. Mater. Interfaces 3(6), 1974–1979 (2011).

D. Nakamura, A. Kumeda, K. Toya, K. Okazaki, K. Kubo, K. Tsuta, M. Higashihata, and T. Okada, “Synthesis of Layer-Structured ZnO Nano-Crystals by Nanoparticle-Assisted Pulsed Laser Deposition,” Proc. SPIE 7940, 990–992 (2011).

L. J. Brillson and Y. Lu, “ZnO Schottky barriers and Ohmic contacts,” J. Appl. Phys. 109(12), 121301 (2011).

2010 (2)

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultravioletlight-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).

M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, “Near UV LEDs Made with in Situ Doped p-n Homojunction ZnO Nanowire Arrays,” Nano Lett. 10(11), 4387–4393 (2010).

2009 (2)

X. W. Sun, B. Ling, J. L. Zhao, S. T. Tan, Y. Yang, Y. Q. Shen, Z. L. Dong, and X. C. Li, “Ultraviolet emission from a ZnO rod homojunction light-emitting diode,” Appl. Phys. Lett. 95(13), 133124 (2009).

J. Maeng, S. Heo, G. Jo, M. Choe, S. Kim, H. Hwang, and T. Lee, “The effect of excimer laser annealing on ZnO nanowires and their field effect transistors,” Nanotechnology 20(9), 095203 (2009).

2008 (3)

R. Q. Guo, J. Nishimura, M. Matsumoto, D. Nakamura, and T. Okada, “Catalyst-free synthesis of vertically-aligned ZnO nanowires by nanoparticle-assisted pulsed laser deposition,” Appl. Phys., A Mater. Sci. Process. 93(4), 843–847 (2008).

Y. Zhao and Y. Jiang, “Effect of KrF excimer laser irradiation on the properties of ZnO thin films,” J. Appl. Phys. 103(11), 114903 (2008).
[CrossRef]

K. Sakai, S. Oyama, K. Noguchi, A. Fukuyama, T. Ikari, and T. Okada, “Optical properties of nanostructured ZnO crystal synthesized by pulsed-laser ablation,” Physica E 40(7), 2489–2493 (2008).

2006 (1)

E. S. P. Leong and S. F. Yu, “UV Random Lasing Action in p-SiC(4H)/i-ZnO–SiO2 Nanocomposite/n-ZnO:Al Heterojunction Diodes,” Adv. Mater.  18(13), 1685–1688 (2006).

2005 (3)

A. Janotti and C. G. V. d. Walle, “Oxygen vacancies in ZnO,” Appl. Phys. Lett. 87, 122102 (2005).

Z. Q. Chen, A. Kawasuso, Y. Xu, H. N. H. Yan, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira, “Production and recovery of defects in phosphorus-implanted ZnO,” J. Appl. Phys. 97, 013528 (2005).

V. Vaithianathan, B. T. Lee, and S. S. Kim, “Pulsed-laser-deposited p-type ZnO films with phosphorus doping,” J. Appl. Phys. 98(4), 043519 (2005).

2004 (1)

S. F. Yu, C. Yuen, S. P. Lau, W. I. Park, and G. C. Yi, “Random laser action in ZnO nanorod arrays embedded in ZnO epilayers,” Appl. Phys. Lett. 84(17), 3241–3243 (2004).

2002 (1)

T. Aoki, Y. Shimizu, A. Miyake, A. Nakamura, Y. Nakanishi, and Y. Hatanaka, “p-Type ZnO Layer Formation by Excimer Laser Doping,” Phys. Status Solidi B 229(2), 911–914 (2002).

Akasaka, S.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultravioletlight-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).

Amaike, H.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultravioletlight-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).

Aoki, T.

T. Aoki, Y. Shimizu, A. Miyake, A. Nakamura, Y. Nakanishi, and Y. Hatanaka, “p-Type ZnO Layer Formation by Excimer Laser Doping,” Phys. Status Solidi B 229(2), 911–914 (2002).

Brillson, L. J.

L. J. Brillson and Y. Lu, “ZnO Schottky barriers and Ohmic contacts,” J. Appl. Phys. 109(12), 121301 (2011).

Chang, Y. C.

M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, “Near UV LEDs Made with in Situ Doped p-n Homojunction ZnO Nanowire Arrays,” Nano Lett. 10(11), 4387–4393 (2010).

Chatterjee, J.

E. S. Kumar, J. Chatterjee, N. Rama, N. DasGupta, and M. S. R. Rao, “A Co doping Route to Realize Low Resistive and Stable p-Type Conduction in (Li,Ni)-ZnO Thin Films Grown by Pulsed Laser Deposition,” ACS Appl. Mater. Interfaces 3(6), 1974–1979 (2011).

Chen, L. J.

M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, “Near UV LEDs Made with in Situ Doped p-n Homojunction ZnO Nanowire Arrays,” Nano Lett. 10(11), 4387–4393 (2010).

Chen, M. T.

M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, “Near UV LEDs Made with in Situ Doped p-n Homojunction ZnO Nanowire Arrays,” Nano Lett. 10(11), 4387–4393 (2010).

Chen, Z. Q.

Z. Q. Chen, A. Kawasuso, Y. Xu, H. N. H. Yan, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira, “Production and recovery of defects in phosphorus-implanted ZnO,” J. Appl. Phys. 97, 013528 (2005).

Chernyak, L.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).

Chichibu, S. F.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultravioletlight-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).

Choe, M.

J. Maeng, S. Heo, G. Jo, M. Choe, S. Kim, H. Hwang, and T. Lee, “The effect of excimer laser annealing on ZnO nanowires and their field effect transistors,” Nanotechnology 20(9), 095203 (2009).

Chou, L. J.

M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, “Near UV LEDs Made with in Situ Doped p-n Homojunction ZnO Nanowire Arrays,” Nano Lett. 10(11), 4387–4393 (2010).

Chu, S.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).

DasGupta, N.

E. S. Kumar, J. Chatterjee, N. Rama, N. DasGupta, and M. S. R. Rao, “A Co doping Route to Realize Low Resistive and Stable p-Type Conduction in (Li,Ni)-ZnO Thin Films Grown by Pulsed Laser Deposition,” ACS Appl. Mater. Interfaces 3(6), 1974–1979 (2011).

Dong, Z. L.

X. W. Sun, B. Ling, J. L. Zhao, S. T. Tan, Y. Yang, Y. Q. Shen, Z. L. Dong, and X. C. Li, “Ultraviolet emission from a ZnO rod homojunction light-emitting diode,” Appl. Phys. Lett. 95(13), 133124 (2009).

Fujii, T.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultravioletlight-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).

Fukuyama, A.

K. Sakai, S. Oyama, K. Noguchi, A. Fukuyama, T. Ikari, and T. Okada, “Optical properties of nanostructured ZnO crystal synthesized by pulsed-laser ablation,” Physica E 40(7), 2489–2493 (2008).

Guo, R. Q.

R. Q. Guo, J. Nishimura, M. Matsumoto, D. Nakamura, and T. Okada, “Catalyst-free synthesis of vertically-aligned ZnO nanowires by nanoparticle-assisted pulsed laser deposition,” Appl. Phys., A Mater. Sci. Process. 93(4), 843–847 (2008).

Hatanaka, Y.

T. Aoki, Y. Shimizu, A. Miyake, A. Nakamura, Y. Nakanishi, and Y. Hatanaka, “p-Type ZnO Layer Formation by Excimer Laser Doping,” Phys. Status Solidi B 229(2), 911–914 (2002).

Heo, S.

J. Maeng, S. Heo, G. Jo, M. Choe, S. Kim, H. Hwang, and T. Lee, “The effect of excimer laser annealing on ZnO nanowires and their field effect transistors,” Nanotechnology 20(9), 095203 (2009).

Higashihata, M.

D. Nakamura, A. Kumeda, K. Toya, K. Okazaki, K. Kubo, K. Tsuta, M. Higashihata, and T. Okada, “Synthesis of Layer-Structured ZnO Nano-Crystals by Nanoparticle-Assisted Pulsed Laser Deposition,” Proc. SPIE 7940, 990–992 (2011).

Hwang, H.

J. Maeng, S. Heo, G. Jo, M. Choe, S. Kim, H. Hwang, and T. Lee, “The effect of excimer laser annealing on ZnO nanowires and their field effect transistors,” Nanotechnology 20(9), 095203 (2009).

Ikari, T.

K. Sakai, S. Oyama, K. Noguchi, A. Fukuyama, T. Ikari, and T. Okada, “Optical properties of nanostructured ZnO crystal synthesized by pulsed-laser ablation,” Physica E 40(7), 2489–2493 (2008).

Janotti, A.

A. Janotti and C. G. V. d. Walle, “Oxygen vacancies in ZnO,” Appl. Phys. Lett. 87, 122102 (2005).

Jiang, Y.

Y. Zhao and Y. Jiang, “Effect of KrF excimer laser irradiation on the properties of ZnO thin films,” J. Appl. Phys. 103(11), 114903 (2008).
[CrossRef]

Jo, G.

J. Maeng, S. Heo, G. Jo, M. Choe, S. Kim, H. Hwang, and T. Lee, “The effect of excimer laser annealing on ZnO nanowires and their field effect transistors,” Nanotechnology 20(9), 095203 (2009).

Kawasaki, M.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultravioletlight-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).

Kawasuso, A.

Z. Q. Chen, A. Kawasuso, Y. Xu, H. N. H. Yan, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira, “Production and recovery of defects in phosphorus-implanted ZnO,” J. Appl. Phys. 97, 013528 (2005).

Kim, S.

J. Maeng, S. Heo, G. Jo, M. Choe, S. Kim, H. Hwang, and T. Lee, “The effect of excimer laser annealing on ZnO nanowires and their field effect transistors,” Nanotechnology 20(9), 095203 (2009).

Kim, S. S.

V. Vaithianathan, B. T. Lee, and S. S. Kim, “Pulsed-laser-deposited p-type ZnO films with phosphorus doping,” J. Appl. Phys. 98(4), 043519 (2005).

Kong, J.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).

Kubo, K.

D. Nakamura, A. Kumeda, K. Toya, K. Okazaki, K. Kubo, K. Tsuta, M. Higashihata, and T. Okada, “Synthesis of Layer-Structured ZnO Nano-Crystals by Nanoparticle-Assisted Pulsed Laser Deposition,” Proc. SPIE 7940, 990–992 (2011).

Kumar, E. S.

E. S. Kumar, J. Chatterjee, N. Rama, N. DasGupta, and M. S. R. Rao, “A Co doping Route to Realize Low Resistive and Stable p-Type Conduction in (Li,Ni)-ZnO Thin Films Grown by Pulsed Laser Deposition,” ACS Appl. Mater. Interfaces 3(6), 1974–1979 (2011).

Kumeda, A.

D. Nakamura, A. Kumeda, K. Toya, K. Okazaki, K. Kubo, K. Tsuta, M. Higashihata, and T. Okada, “Synthesis of Layer-Structured ZnO Nano-Crystals by Nanoparticle-Assisted Pulsed Laser Deposition,” Proc. SPIE 7940, 990–992 (2011).

Lau, S. P.

S. F. Yu, C. Yuen, S. P. Lau, W. I. Park, and G. C. Yi, “Random laser action in ZnO nanorod arrays embedded in ZnO epilayers,” Appl. Phys. Lett. 84(17), 3241–3243 (2004).

Lee, B. T.

V. Vaithianathan, B. T. Lee, and S. S. Kim, “Pulsed-laser-deposited p-type ZnO films with phosphorus doping,” J. Appl. Phys. 98(4), 043519 (2005).

Lee, C. Y.

M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, “Near UV LEDs Made with in Situ Doped p-n Homojunction ZnO Nanowire Arrays,” Nano Lett. 10(11), 4387–4393 (2010).

Lee, T.

J. Maeng, S. Heo, G. Jo, M. Choe, S. Kim, H. Hwang, and T. Lee, “The effect of excimer laser annealing on ZnO nanowires and their field effect transistors,” Nanotechnology 20(9), 095203 (2009).

Leong, E. S. P.

E. S. P. Leong and S. F. Yu, “UV Random Lasing Action in p-SiC(4H)/i-ZnO–SiO2 Nanocomposite/n-ZnO:Al Heterojunction Diodes,” Adv. Mater.  18(13), 1685–1688 (2006).

Li, L.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).

Li, X. C.

X. W. Sun, B. Ling, J. L. Zhao, S. T. Tan, Y. Yang, Y. Q. Shen, Z. L. Dong, and X. C. Li, “Ultraviolet emission from a ZnO rod homojunction light-emitting diode,” Appl. Phys. Lett. 95(13), 133124 (2009).

Lin, Y.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).

Ling, B.

X. W. Sun, B. Ling, J. L. Zhao, S. T. Tan, Y. Yang, Y. Q. Shen, Z. L. Dong, and X. C. Li, “Ultraviolet emission from a ZnO rod homojunction light-emitting diode,” Appl. Phys. Lett. 95(13), 133124 (2009).

Liu, J.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).

Lu, M. P.

M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, “Near UV LEDs Made with in Situ Doped p-n Homojunction ZnO Nanowire Arrays,” Nano Lett. 10(11), 4387–4393 (2010).

Lu, M. Y.

M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, “Near UV LEDs Made with in Situ Doped p-n Homojunction ZnO Nanowire Arrays,” Nano Lett. 10(11), 4387–4393 (2010).

Lu, Y.

L. J. Brillson and Y. Lu, “ZnO Schottky barriers and Ohmic contacts,” J. Appl. Phys. 109(12), 121301 (2011).

Maeng, J.

J. Maeng, S. Heo, G. Jo, M. Choe, S. Kim, H. Hwang, and T. Lee, “The effect of excimer laser annealing on ZnO nanowires and their field effect transistors,” Nanotechnology 20(9), 095203 (2009).

Matsumoto, M.

R. Q. Guo, J. Nishimura, M. Matsumoto, D. Nakamura, and T. Okada, “Catalyst-free synthesis of vertically-aligned ZnO nanowires by nanoparticle-assisted pulsed laser deposition,” Appl. Phys., A Mater. Sci. Process. 93(4), 843–847 (2008).

Miyake, A.

T. Aoki, Y. Shimizu, A. Miyake, A. Nakamura, Y. Nakanishi, and Y. Hatanaka, “p-Type ZnO Layer Formation by Excimer Laser Doping,” Phys. Status Solidi B 229(2), 911–914 (2002).

Nakahara, K.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultravioletlight-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).

Nakamura, A.

T. Aoki, Y. Shimizu, A. Miyake, A. Nakamura, Y. Nakanishi, and Y. Hatanaka, “p-Type ZnO Layer Formation by Excimer Laser Doping,” Phys. Status Solidi B 229(2), 911–914 (2002).

Nakamura, D.

D. Nakamura, A. Kumeda, K. Toya, K. Okazaki, K. Kubo, K. Tsuta, M. Higashihata, and T. Okada, “Synthesis of Layer-Structured ZnO Nano-Crystals by Nanoparticle-Assisted Pulsed Laser Deposition,” Proc. SPIE 7940, 990–992 (2011).

R. Q. Guo, J. Nishimura, M. Matsumoto, D. Nakamura, and T. Okada, “Catalyst-free synthesis of vertically-aligned ZnO nanowires by nanoparticle-assisted pulsed laser deposition,” Appl. Phys., A Mater. Sci. Process. 93(4), 843–847 (2008).

Nakanishi, Y.

T. Aoki, Y. Shimizu, A. Miyake, A. Nakamura, Y. Nakanishi, and Y. Hatanaka, “p-Type ZnO Layer Formation by Excimer Laser Doping,” Phys. Status Solidi B 229(2), 911–914 (2002).

Nishimoto, Y.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultravioletlight-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).

Nishimura, J.

R. Q. Guo, J. Nishimura, M. Matsumoto, D. Nakamura, and T. Okada, “Catalyst-free synthesis of vertically-aligned ZnO nanowires by nanoparticle-assisted pulsed laser deposition,” Appl. Phys., A Mater. Sci. Process. 93(4), 843–847 (2008).

Noguchi, K.

K. Sakai, S. Oyama, K. Noguchi, A. Fukuyama, T. Ikari, and T. Okada, “Optical properties of nanostructured ZnO crystal synthesized by pulsed-laser ablation,” Physica E 40(7), 2489–2493 (2008).

Ohdaira, T.

Z. Q. Chen, A. Kawasuso, Y. Xu, H. N. H. Yan, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira, “Production and recovery of defects in phosphorus-implanted ZnO,” J. Appl. Phys. 97, 013528 (2005).

Ohtomo, A.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultravioletlight-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).

Okada, T.

D. Nakamura, A. Kumeda, K. Toya, K. Okazaki, K. Kubo, K. Tsuta, M. Higashihata, and T. Okada, “Synthesis of Layer-Structured ZnO Nano-Crystals by Nanoparticle-Assisted Pulsed Laser Deposition,” Proc. SPIE 7940, 990–992 (2011).

K. Sakai, S. Oyama, K. Noguchi, A. Fukuyama, T. Ikari, and T. Okada, “Optical properties of nanostructured ZnO crystal synthesized by pulsed-laser ablation,” Physica E 40(7), 2489–2493 (2008).

R. Q. Guo, J. Nishimura, M. Matsumoto, D. Nakamura, and T. Okada, “Catalyst-free synthesis of vertically-aligned ZnO nanowires by nanoparticle-assisted pulsed laser deposition,” Appl. Phys., A Mater. Sci. Process. 93(4), 843–847 (2008).

Okazaki, K.

D. Nakamura, A. Kumeda, K. Toya, K. Okazaki, K. Kubo, K. Tsuta, M. Higashihata, and T. Okada, “Synthesis of Layer-Structured ZnO Nano-Crystals by Nanoparticle-Assisted Pulsed Laser Deposition,” Proc. SPIE 7940, 990–992 (2011).

Onuma, T.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultravioletlight-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).

Oyama, S.

K. Sakai, S. Oyama, K. Noguchi, A. Fukuyama, T. Ikari, and T. Okada, “Optical properties of nanostructured ZnO crystal synthesized by pulsed-laser ablation,” Physica E 40(7), 2489–2493 (2008).

Park, W. I.

S. F. Yu, C. Yuen, S. P. Lau, W. I. Park, and G. C. Yi, “Random laser action in ZnO nanorod arrays embedded in ZnO epilayers,” Appl. Phys. Lett. 84(17), 3241–3243 (2004).

Rama, N.

E. S. Kumar, J. Chatterjee, N. Rama, N. DasGupta, and M. S. R. Rao, “A Co doping Route to Realize Low Resistive and Stable p-Type Conduction in (Li,Ni)-ZnO Thin Films Grown by Pulsed Laser Deposition,” ACS Appl. Mater. Interfaces 3(6), 1974–1979 (2011).

Rao, M. S. R.

E. S. Kumar, J. Chatterjee, N. Rama, N. DasGupta, and M. S. R. Rao, “A Co doping Route to Realize Low Resistive and Stable p-Type Conduction in (Li,Ni)-ZnO Thin Films Grown by Pulsed Laser Deposition,” ACS Appl. Mater. Interfaces 3(6), 1974–1979 (2011).

Ren, J.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).

Sakai, K.

K. Sakai, S. Oyama, K. Noguchi, A. Fukuyama, T. Ikari, and T. Okada, “Optical properties of nanostructured ZnO crystal synthesized by pulsed-laser ablation,” Physica E 40(7), 2489–2493 (2008).

Sasaki, A.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultravioletlight-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).

Sekiguchi, T.

Z. Q. Chen, A. Kawasuso, Y. Xu, H. N. H. Yan, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira, “Production and recovery of defects in phosphorus-implanted ZnO,” J. Appl. Phys. 97, 013528 (2005).

Shen, Y. Q.

X. W. Sun, B. Ling, J. L. Zhao, S. T. Tan, Y. Yang, Y. Q. Shen, Z. L. Dong, and X. C. Li, “Ultraviolet emission from a ZnO rod homojunction light-emitting diode,” Appl. Phys. Lett. 95(13), 133124 (2009).

Shimizu, Y.

T. Aoki, Y. Shimizu, A. Miyake, A. Nakamura, Y. Nakanishi, and Y. Hatanaka, “p-Type ZnO Layer Formation by Excimer Laser Doping,” Phys. Status Solidi B 229(2), 911–914 (2002).

Song, J.

M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, “Near UV LEDs Made with in Situ Doped p-n Homojunction ZnO Nanowire Arrays,” Nano Lett. 10(11), 4387–4393 (2010).

Sun, X. W.

X. W. Sun, B. Ling, J. L. Zhao, S. T. Tan, Y. Yang, Y. Q. Shen, Z. L. Dong, and X. C. Li, “Ultraviolet emission from a ZnO rod homojunction light-emitting diode,” Appl. Phys. Lett. 95(13), 133124 (2009).

Suzuki, R.

Z. Q. Chen, A. Kawasuso, Y. Xu, H. N. H. Yan, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira, “Production and recovery of defects in phosphorus-implanted ZnO,” J. Appl. Phys. 97, 013528 (2005).

Takamizu, D.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultravioletlight-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).

Takasu, H.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultravioletlight-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).

Tamura, K.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultravioletlight-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).

Tan, S. T.

X. W. Sun, B. Ling, J. L. Zhao, S. T. Tan, Y. Yang, Y. Q. Shen, Z. L. Dong, and X. C. Li, “Ultraviolet emission from a ZnO rod homojunction light-emitting diode,” Appl. Phys. Lett. 95(13), 133124 (2009).

Tanabe, T.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultravioletlight-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).

Toya, K.

D. Nakamura, A. Kumeda, K. Toya, K. Okazaki, K. Kubo, K. Tsuta, M. Higashihata, and T. Okada, “Synthesis of Layer-Structured ZnO Nano-Crystals by Nanoparticle-Assisted Pulsed Laser Deposition,” Proc. SPIE 7940, 990–992 (2011).

Tsukazaki, A.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultravioletlight-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).

Tsuta, K.

D. Nakamura, A. Kumeda, K. Toya, K. Okazaki, K. Kubo, K. Tsuta, M. Higashihata, and T. Okada, “Synthesis of Layer-Structured ZnO Nano-Crystals by Nanoparticle-Assisted Pulsed Laser Deposition,” Proc. SPIE 7940, 990–992 (2011).

Vaithianathan, V.

V. Vaithianathan, B. T. Lee, and S. S. Kim, “Pulsed-laser-deposited p-type ZnO films with phosphorus doping,” J. Appl. Phys. 98(4), 043519 (2005).

Walle, C. G. V. d.

A. Janotti and C. G. V. d. Walle, “Oxygen vacancies in ZnO,” Appl. Phys. Lett. 87, 122102 (2005).

Wang, G.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).

Wang, Z. L.

M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, “Near UV LEDs Made with in Situ Doped p-n Homojunction ZnO Nanowire Arrays,” Nano Lett. 10(11), 4387–4393 (2010).

Wu, Y. J.

M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, “Near UV LEDs Made with in Situ Doped p-n Homojunction ZnO Nanowire Arrays,” Nano Lett. 10(11), 4387–4393 (2010).

Xu, Y.

Z. Q. Chen, A. Kawasuso, Y. Xu, H. N. H. Yan, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira, “Production and recovery of defects in phosphorus-implanted ZnO,” J. Appl. Phys. 97, 013528 (2005).

Yan, H. N. H.

Z. Q. Chen, A. Kawasuso, Y. Xu, H. N. H. Yan, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira, “Production and recovery of defects in phosphorus-implanted ZnO,” J. Appl. Phys. 97, 013528 (2005).

Yang, Y.

X. W. Sun, B. Ling, J. L. Zhao, S. T. Tan, Y. Yang, Y. Q. Shen, Z. L. Dong, and X. C. Li, “Ultraviolet emission from a ZnO rod homojunction light-emitting diode,” Appl. Phys. Lett. 95(13), 133124 (2009).

Yi, G. C.

S. F. Yu, C. Yuen, S. P. Lau, W. I. Park, and G. C. Yi, “Random laser action in ZnO nanorod arrays embedded in ZnO epilayers,” Appl. Phys. Lett. 84(17), 3241–3243 (2004).

Yu, S. F.

E. S. P. Leong and S. F. Yu, “UV Random Lasing Action in p-SiC(4H)/i-ZnO–SiO2 Nanocomposite/n-ZnO:Al Heterojunction Diodes,” Adv. Mater.  18(13), 1685–1688 (2006).

S. F. Yu, C. Yuen, S. P. Lau, W. I. Park, and G. C. Yi, “Random laser action in ZnO nanorod arrays embedded in ZnO epilayers,” Appl. Phys. Lett. 84(17), 3241–3243 (2004).

Yuan, X. L.

Z. Q. Chen, A. Kawasuso, Y. Xu, H. N. H. Yan, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira, “Production and recovery of defects in phosphorus-implanted ZnO,” J. Appl. Phys. 97, 013528 (2005).

Yuen, C.

S. F. Yu, C. Yuen, S. P. Lau, W. I. Park, and G. C. Yi, “Random laser action in ZnO nanorod arrays embedded in ZnO epilayers,” Appl. Phys. Lett. 84(17), 3241–3243 (2004).

Yuji, H.

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultravioletlight-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).

Zhao, J.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).

Zhao, J. L.

X. W. Sun, B. Ling, J. L. Zhao, S. T. Tan, Y. Yang, Y. Q. Shen, Z. L. Dong, and X. C. Li, “Ultraviolet emission from a ZnO rod homojunction light-emitting diode,” Appl. Phys. Lett. 95(13), 133124 (2009).

Zhao, Y.

Y. Zhao and Y. Jiang, “Effect of KrF excimer laser irradiation on the properties of ZnO thin films,” J. Appl. Phys. 103(11), 114903 (2008).
[CrossRef]

Zhou, W.

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).

ACS Appl. Mater. Interfaces (1)

E. S. Kumar, J. Chatterjee, N. Rama, N. DasGupta, and M. S. R. Rao, “A Co doping Route to Realize Low Resistive and Stable p-Type Conduction in (Li,Ni)-ZnO Thin Films Grown by Pulsed Laser Deposition,” ACS Appl. Mater. Interfaces 3(6), 1974–1979 (2011).

Adv. Mater. (1)

E. S. P. Leong and S. F. Yu, “UV Random Lasing Action in p-SiC(4H)/i-ZnO–SiO2 Nanocomposite/n-ZnO:Al Heterojunction Diodes,” Adv. Mater.  18(13), 1685–1688 (2006).

Appl. Phys. Lett. (4)

S. F. Yu, C. Yuen, S. P. Lau, W. I. Park, and G. C. Yi, “Random laser action in ZnO nanorod arrays embedded in ZnO epilayers,” Appl. Phys. Lett. 84(17), 3241–3243 (2004).

K. Nakahara, S. Akasaka, H. Yuji, K. Tamura, T. Fujii, Y. Nishimoto, D. Takamizu, A. Sasaki, T. Tanabe, H. Takasu, H. Amaike, T. Onuma, S. F. Chichibu, A. Tsukazaki, A. Ohtomo, and M. Kawasaki, “Nitrogen doped MgxZn1-xO/ZnO single heterostructure ultravioletlight-emitting diodes on ZnO substrates,” Appl. Phys. Lett. 97(1), 013501 (2010).

X. W. Sun, B. Ling, J. L. Zhao, S. T. Tan, Y. Yang, Y. Q. Shen, Z. L. Dong, and X. C. Li, “Ultraviolet emission from a ZnO rod homojunction light-emitting diode,” Appl. Phys. Lett. 95(13), 133124 (2009).

A. Janotti and C. G. V. d. Walle, “Oxygen vacancies in ZnO,” Appl. Phys. Lett. 87, 122102 (2005).

Appl. Phys., A Mater. Sci. Process. (1)

R. Q. Guo, J. Nishimura, M. Matsumoto, D. Nakamura, and T. Okada, “Catalyst-free synthesis of vertically-aligned ZnO nanowires by nanoparticle-assisted pulsed laser deposition,” Appl. Phys., A Mater. Sci. Process. 93(4), 843–847 (2008).

J. Appl. Phys. (4)

V. Vaithianathan, B. T. Lee, and S. S. Kim, “Pulsed-laser-deposited p-type ZnO films with phosphorus doping,” J. Appl. Phys. 98(4), 043519 (2005).

Z. Q. Chen, A. Kawasuso, Y. Xu, H. N. H. Yan, X. L. Yuan, T. Sekiguchi, R. Suzuki, and T. Ohdaira, “Production and recovery of defects in phosphorus-implanted ZnO,” J. Appl. Phys. 97, 013528 (2005).

L. J. Brillson and Y. Lu, “ZnO Schottky barriers and Ohmic contacts,” J. Appl. Phys. 109(12), 121301 (2011).

Y. Zhao and Y. Jiang, “Effect of KrF excimer laser irradiation on the properties of ZnO thin films,” J. Appl. Phys. 103(11), 114903 (2008).
[CrossRef]

Nano Lett. (1)

M. T. Chen, M. P. Lu, Y. J. Wu, J. Song, C. Y. Lee, M. Y. Lu, Y. C. Chang, L. J. Chou, Z. L. Wang, and L. J. Chen, “Near UV LEDs Made with in Situ Doped p-n Homojunction ZnO Nanowire Arrays,” Nano Lett. 10(11), 4387–4393 (2010).

Nanotechnology (1)

J. Maeng, S. Heo, G. Jo, M. Choe, S. Kim, H. Hwang, and T. Lee, “The effect of excimer laser annealing on ZnO nanowires and their field effect transistors,” Nanotechnology 20(9), 095203 (2009).

Nat. Nanotechnol. (1)

S. Chu, G. Wang, W. Zhou, Y. Lin, L. Chernyak, J. Zhao, J. Kong, L. Li, J. Ren, and J. Liu, “Electrically pumped waveguide lasing from ZnO nanowires,” Nat. Nanotechnol. 6(8), 506–510 (2011).

Phys. Status Solidi B (1)

T. Aoki, Y. Shimizu, A. Miyake, A. Nakamura, Y. Nakanishi, and Y. Hatanaka, “p-Type ZnO Layer Formation by Excimer Laser Doping,” Phys. Status Solidi B 229(2), 911–914 (2002).

Physica E (1)

K. Sakai, S. Oyama, K. Noguchi, A. Fukuyama, T. Ikari, and T. Okada, “Optical properties of nanostructured ZnO crystal synthesized by pulsed-laser ablation,” Physica E 40(7), 2489–2493 (2008).

Proc. SPIE (1)

D. Nakamura, A. Kumeda, K. Toya, K. Okazaki, K. Kubo, K. Tsuta, M. Higashihata, and T. Okada, “Synthesis of Layer-Structured ZnO Nano-Crystals by Nanoparticle-Assisted Pulsed Laser Deposition,” Proc. SPIE 7940, 990–992 (2011).

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Figures (4)

Fig. 1
Fig. 1

SEM images of ZnO NRs, (a) as-grown and(c) as-implanted. (45þ tilted and top view) (b) Simulation results of P+-distribution after ion implantation. (d) RT-PL spectra of as-grown and P+-implanted ZnO NRs.

Fig. 2
Fig. 2

(a) SEM images of ZnO NRs after laser annealing P+-implanted ZnO NRs followed by laser annealing at a fluence of 100mJ/cm2. (45þ tilted and top view)(b) PL spectra of P+-implanted ZnO NRs followed by laser annealing and thermal annealing.

Fig. 3.I-V
Fig. 3.I-V

characteristics of P+-implanted ZnO NRs followed by laser annealing at a fluence of 100mJ/cm2. The top left inset shows I-V characteristics at p-p and n-n areas. The bottom right inset shows a schematic of prove electrode.

Fig. 4
Fig. 4

SEM images of ZnO NRs (a) as-grown ZnO NRs, laser annealed at a fluence of (b) 70mJ/cm2, (c) 100mJ/cm2 and (d) 150mJ/cm2. (45þ tilted and top view)(e) RT-PL spectra of ZnO NRs laser annealed at fluences of 70mJ/cm2, 100mJ/cm2 and 150mJ/cm2.

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