Abstract

We present and demonstrate a simple and cost-effective technique for improving the modulation bandwidth of electroabsorption-modulated laser (EML). This technique utilizes the RF resonance caused by the EML chip (i.e., junction capacitance) and bonding wire (i.e, wire inductance). We analyze the effects of the lengths of the bonding wires on the frequency responses of EML by using an equivalent circuit model. To verify this analysis, we package a lumped EML chip on the sub-mount and measure its frequency responses. The results show that, by using the proposed technique, we can increase the modulation bandwidth of EML from ~16 GHz to ~28 GHz.

© 2012 OSA

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References

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  1. IEEE Standard 802.3ba.
  2. Y. D. Bae, B. K. Kang, B. Park, S. M. Lee, Y. H. Kim, H. K. Kim, M. K. Park, I. Kim, and D. H. Jang, “Operation of 1550-nm electroabsorption-modulated laser at 40°C for 10-Gb/s, 40-km transmission,” IEEE J. Sel. Top. Quantum Electron. 11(1), 135–140 (2005).
    [CrossRef]
  3. Y. Luo, P. Cai, C. Sun, and B. Xiong, “High-speed AlGaInAs-MQW integrated EA modulator/DFB laser module based on identical epitaxial layer scheme for 40 Gb/s optic fiber communication systems,” in Proc. 19th IPRM 2007, WeB1–5 (2007).
  4. C. Cole, B. Huebner, and J. E. Johnson, “Photonic integration for high-volume, low-cost applications,” IEEE Commun. Mag. 47(3), S16–S22 (2009).
    [CrossRef]
  5. T. Fujisawa, S. Kanazawa, N. Nunoya, H. Ishii, Y. Kawaguchi, A. Ohki, N. Fujiwara, K. Takahata, R. Iga, F. Kano, and H. Oohashi, “4×25-Gbit/s, 1.3-μm, monolithically integrated light source for 100-Gbit/s Ethernet,” in Proc. ECOC 2010, Th.9.D.1 (2010).
  6. Y. H. Kwon, J. S. Choe, J. S. Sim, S. B. Kim, H. Yun, K. S. Choi, B. S. Choi, and E. S. Nam, “40 Gb/s traveling-wave electroabsorption modulator-integrated DFB lasers fabricated using selective area growth,” ETRI J. 31(6), 765–769 (2009).
    [CrossRef]
  7. X. Zhao, K. Hasebe, T. Sakaguchi, F. Koyama, C. J. Chang-Hasnain, N. Nishiyama, C. Caneau, and C. E. Zah, “Tunable optical equalizer using diffraction grating filters,” IEEE Photon. Technol. Lett. 20(18), 1590–1592 (2008).
    [CrossRef]
  8. T. Hatta, T. Miyahara, M. Ishizaki, N. Okada, S. Zaizen, K. Motoshima, and K. Kasahara, “Inductance-controlled electroabsorption modulator modules using the flip-chip bonding technique,” J. Lightwave Technol. 23(2), 582–587 (2005).
    [CrossRef]
  9. Y. Wang, Y. Cheng, F. Zhou, H. Zhu, L. Zhao, and W. Wang, “Design of high frequency compensation submount for 40Gbit/s lumped electroabsorption modulated lasers,” in Proc. OSA/ACP 2009, WL38 (2009).
  10. G. L. Li, C. K. Sun, S. A. Pappert, W. X. Chen, and P. K. L. Yu, “Ultra-speed traveling-wave electroabsorption modulator-design and analysis,” IEEE Trans. Microw. Theory Tech. 47(7), 1177–1183 (1999).
    [CrossRef]
  11. H. Fukano, Y. Akage, Y. Kawaguchi, Y. Suzaki, K. Kishi, T. Yamanaka, Y. Kondo, and H. Yasaka, “Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage,” IEEE J. Sel. Top. Quantum Electron. 13(5), 1129–1134 (2007).
    [CrossRef]

2009 (2)

C. Cole, B. Huebner, and J. E. Johnson, “Photonic integration for high-volume, low-cost applications,” IEEE Commun. Mag. 47(3), S16–S22 (2009).
[CrossRef]

Y. H. Kwon, J. S. Choe, J. S. Sim, S. B. Kim, H. Yun, K. S. Choi, B. S. Choi, and E. S. Nam, “40 Gb/s traveling-wave electroabsorption modulator-integrated DFB lasers fabricated using selective area growth,” ETRI J. 31(6), 765–769 (2009).
[CrossRef]

2008 (1)

X. Zhao, K. Hasebe, T. Sakaguchi, F. Koyama, C. J. Chang-Hasnain, N. Nishiyama, C. Caneau, and C. E. Zah, “Tunable optical equalizer using diffraction grating filters,” IEEE Photon. Technol. Lett. 20(18), 1590–1592 (2008).
[CrossRef]

2007 (1)

H. Fukano, Y. Akage, Y. Kawaguchi, Y. Suzaki, K. Kishi, T. Yamanaka, Y. Kondo, and H. Yasaka, “Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage,” IEEE J. Sel. Top. Quantum Electron. 13(5), 1129–1134 (2007).
[CrossRef]

2005 (2)

T. Hatta, T. Miyahara, M. Ishizaki, N. Okada, S. Zaizen, K. Motoshima, and K. Kasahara, “Inductance-controlled electroabsorption modulator modules using the flip-chip bonding technique,” J. Lightwave Technol. 23(2), 582–587 (2005).
[CrossRef]

Y. D. Bae, B. K. Kang, B. Park, S. M. Lee, Y. H. Kim, H. K. Kim, M. K. Park, I. Kim, and D. H. Jang, “Operation of 1550-nm electroabsorption-modulated laser at 40°C for 10-Gb/s, 40-km transmission,” IEEE J. Sel. Top. Quantum Electron. 11(1), 135–140 (2005).
[CrossRef]

1999 (1)

G. L. Li, C. K. Sun, S. A. Pappert, W. X. Chen, and P. K. L. Yu, “Ultra-speed traveling-wave electroabsorption modulator-design and analysis,” IEEE Trans. Microw. Theory Tech. 47(7), 1177–1183 (1999).
[CrossRef]

Akage, Y.

H. Fukano, Y. Akage, Y. Kawaguchi, Y. Suzaki, K. Kishi, T. Yamanaka, Y. Kondo, and H. Yasaka, “Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage,” IEEE J. Sel. Top. Quantum Electron. 13(5), 1129–1134 (2007).
[CrossRef]

Bae, Y. D.

Y. D. Bae, B. K. Kang, B. Park, S. M. Lee, Y. H. Kim, H. K. Kim, M. K. Park, I. Kim, and D. H. Jang, “Operation of 1550-nm electroabsorption-modulated laser at 40°C for 10-Gb/s, 40-km transmission,” IEEE J. Sel. Top. Quantum Electron. 11(1), 135–140 (2005).
[CrossRef]

Caneau, C.

X. Zhao, K. Hasebe, T. Sakaguchi, F. Koyama, C. J. Chang-Hasnain, N. Nishiyama, C. Caneau, and C. E. Zah, “Tunable optical equalizer using diffraction grating filters,” IEEE Photon. Technol. Lett. 20(18), 1590–1592 (2008).
[CrossRef]

Chang-Hasnain, C. J.

X. Zhao, K. Hasebe, T. Sakaguchi, F. Koyama, C. J. Chang-Hasnain, N. Nishiyama, C. Caneau, and C. E. Zah, “Tunable optical equalizer using diffraction grating filters,” IEEE Photon. Technol. Lett. 20(18), 1590–1592 (2008).
[CrossRef]

Chen, W. X.

G. L. Li, C. K. Sun, S. A. Pappert, W. X. Chen, and P. K. L. Yu, “Ultra-speed traveling-wave electroabsorption modulator-design and analysis,” IEEE Trans. Microw. Theory Tech. 47(7), 1177–1183 (1999).
[CrossRef]

Choe, J. S.

Y. H. Kwon, J. S. Choe, J. S. Sim, S. B. Kim, H. Yun, K. S. Choi, B. S. Choi, and E. S. Nam, “40 Gb/s traveling-wave electroabsorption modulator-integrated DFB lasers fabricated using selective area growth,” ETRI J. 31(6), 765–769 (2009).
[CrossRef]

Choi, B. S.

Y. H. Kwon, J. S. Choe, J. S. Sim, S. B. Kim, H. Yun, K. S. Choi, B. S. Choi, and E. S. Nam, “40 Gb/s traveling-wave electroabsorption modulator-integrated DFB lasers fabricated using selective area growth,” ETRI J. 31(6), 765–769 (2009).
[CrossRef]

Choi, K. S.

Y. H. Kwon, J. S. Choe, J. S. Sim, S. B. Kim, H. Yun, K. S. Choi, B. S. Choi, and E. S. Nam, “40 Gb/s traveling-wave electroabsorption modulator-integrated DFB lasers fabricated using selective area growth,” ETRI J. 31(6), 765–769 (2009).
[CrossRef]

Cole, C.

C. Cole, B. Huebner, and J. E. Johnson, “Photonic integration for high-volume, low-cost applications,” IEEE Commun. Mag. 47(3), S16–S22 (2009).
[CrossRef]

Fukano, H.

H. Fukano, Y. Akage, Y. Kawaguchi, Y. Suzaki, K. Kishi, T. Yamanaka, Y. Kondo, and H. Yasaka, “Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage,” IEEE J. Sel. Top. Quantum Electron. 13(5), 1129–1134 (2007).
[CrossRef]

Hasebe, K.

X. Zhao, K. Hasebe, T. Sakaguchi, F. Koyama, C. J. Chang-Hasnain, N. Nishiyama, C. Caneau, and C. E. Zah, “Tunable optical equalizer using diffraction grating filters,” IEEE Photon. Technol. Lett. 20(18), 1590–1592 (2008).
[CrossRef]

Hatta, T.

Huebner, B.

C. Cole, B. Huebner, and J. E. Johnson, “Photonic integration for high-volume, low-cost applications,” IEEE Commun. Mag. 47(3), S16–S22 (2009).
[CrossRef]

Ishizaki, M.

Jang, D. H.

Y. D. Bae, B. K. Kang, B. Park, S. M. Lee, Y. H. Kim, H. K. Kim, M. K. Park, I. Kim, and D. H. Jang, “Operation of 1550-nm electroabsorption-modulated laser at 40°C for 10-Gb/s, 40-km transmission,” IEEE J. Sel. Top. Quantum Electron. 11(1), 135–140 (2005).
[CrossRef]

Johnson, J. E.

C. Cole, B. Huebner, and J. E. Johnson, “Photonic integration for high-volume, low-cost applications,” IEEE Commun. Mag. 47(3), S16–S22 (2009).
[CrossRef]

Kang, B. K.

Y. D. Bae, B. K. Kang, B. Park, S. M. Lee, Y. H. Kim, H. K. Kim, M. K. Park, I. Kim, and D. H. Jang, “Operation of 1550-nm electroabsorption-modulated laser at 40°C for 10-Gb/s, 40-km transmission,” IEEE J. Sel. Top. Quantum Electron. 11(1), 135–140 (2005).
[CrossRef]

Kasahara, K.

Kawaguchi, Y.

H. Fukano, Y. Akage, Y. Kawaguchi, Y. Suzaki, K. Kishi, T. Yamanaka, Y. Kondo, and H. Yasaka, “Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage,” IEEE J. Sel. Top. Quantum Electron. 13(5), 1129–1134 (2007).
[CrossRef]

Kim, H. K.

Y. D. Bae, B. K. Kang, B. Park, S. M. Lee, Y. H. Kim, H. K. Kim, M. K. Park, I. Kim, and D. H. Jang, “Operation of 1550-nm electroabsorption-modulated laser at 40°C for 10-Gb/s, 40-km transmission,” IEEE J. Sel. Top. Quantum Electron. 11(1), 135–140 (2005).
[CrossRef]

Kim, I.

Y. D. Bae, B. K. Kang, B. Park, S. M. Lee, Y. H. Kim, H. K. Kim, M. K. Park, I. Kim, and D. H. Jang, “Operation of 1550-nm electroabsorption-modulated laser at 40°C for 10-Gb/s, 40-km transmission,” IEEE J. Sel. Top. Quantum Electron. 11(1), 135–140 (2005).
[CrossRef]

Kim, S. B.

Y. H. Kwon, J. S. Choe, J. S. Sim, S. B. Kim, H. Yun, K. S. Choi, B. S. Choi, and E. S. Nam, “40 Gb/s traveling-wave electroabsorption modulator-integrated DFB lasers fabricated using selective area growth,” ETRI J. 31(6), 765–769 (2009).
[CrossRef]

Kim, Y. H.

Y. D. Bae, B. K. Kang, B. Park, S. M. Lee, Y. H. Kim, H. K. Kim, M. K. Park, I. Kim, and D. H. Jang, “Operation of 1550-nm electroabsorption-modulated laser at 40°C for 10-Gb/s, 40-km transmission,” IEEE J. Sel. Top. Quantum Electron. 11(1), 135–140 (2005).
[CrossRef]

Kishi, K.

H. Fukano, Y. Akage, Y. Kawaguchi, Y. Suzaki, K. Kishi, T. Yamanaka, Y. Kondo, and H. Yasaka, “Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage,” IEEE J. Sel. Top. Quantum Electron. 13(5), 1129–1134 (2007).
[CrossRef]

Kondo, Y.

H. Fukano, Y. Akage, Y. Kawaguchi, Y. Suzaki, K. Kishi, T. Yamanaka, Y. Kondo, and H. Yasaka, “Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage,” IEEE J. Sel. Top. Quantum Electron. 13(5), 1129–1134 (2007).
[CrossRef]

Koyama, F.

X. Zhao, K. Hasebe, T. Sakaguchi, F. Koyama, C. J. Chang-Hasnain, N. Nishiyama, C. Caneau, and C. E. Zah, “Tunable optical equalizer using diffraction grating filters,” IEEE Photon. Technol. Lett. 20(18), 1590–1592 (2008).
[CrossRef]

Kwon, Y. H.

Y. H. Kwon, J. S. Choe, J. S. Sim, S. B. Kim, H. Yun, K. S. Choi, B. S. Choi, and E. S. Nam, “40 Gb/s traveling-wave electroabsorption modulator-integrated DFB lasers fabricated using selective area growth,” ETRI J. 31(6), 765–769 (2009).
[CrossRef]

Lee, S. M.

Y. D. Bae, B. K. Kang, B. Park, S. M. Lee, Y. H. Kim, H. K. Kim, M. K. Park, I. Kim, and D. H. Jang, “Operation of 1550-nm electroabsorption-modulated laser at 40°C for 10-Gb/s, 40-km transmission,” IEEE J. Sel. Top. Quantum Electron. 11(1), 135–140 (2005).
[CrossRef]

Li, G. L.

G. L. Li, C. K. Sun, S. A. Pappert, W. X. Chen, and P. K. L. Yu, “Ultra-speed traveling-wave electroabsorption modulator-design and analysis,” IEEE Trans. Microw. Theory Tech. 47(7), 1177–1183 (1999).
[CrossRef]

Miyahara, T.

Motoshima, K.

Nam, E. S.

Y. H. Kwon, J. S. Choe, J. S. Sim, S. B. Kim, H. Yun, K. S. Choi, B. S. Choi, and E. S. Nam, “40 Gb/s traveling-wave electroabsorption modulator-integrated DFB lasers fabricated using selective area growth,” ETRI J. 31(6), 765–769 (2009).
[CrossRef]

Nishiyama, N.

X. Zhao, K. Hasebe, T. Sakaguchi, F. Koyama, C. J. Chang-Hasnain, N. Nishiyama, C. Caneau, and C. E. Zah, “Tunable optical equalizer using diffraction grating filters,” IEEE Photon. Technol. Lett. 20(18), 1590–1592 (2008).
[CrossRef]

Okada, N.

Pappert, S. A.

G. L. Li, C. K. Sun, S. A. Pappert, W. X. Chen, and P. K. L. Yu, “Ultra-speed traveling-wave electroabsorption modulator-design and analysis,” IEEE Trans. Microw. Theory Tech. 47(7), 1177–1183 (1999).
[CrossRef]

Park, B.

Y. D. Bae, B. K. Kang, B. Park, S. M. Lee, Y. H. Kim, H. K. Kim, M. K. Park, I. Kim, and D. H. Jang, “Operation of 1550-nm electroabsorption-modulated laser at 40°C for 10-Gb/s, 40-km transmission,” IEEE J. Sel. Top. Quantum Electron. 11(1), 135–140 (2005).
[CrossRef]

Park, M. K.

Y. D. Bae, B. K. Kang, B. Park, S. M. Lee, Y. H. Kim, H. K. Kim, M. K. Park, I. Kim, and D. H. Jang, “Operation of 1550-nm electroabsorption-modulated laser at 40°C for 10-Gb/s, 40-km transmission,” IEEE J. Sel. Top. Quantum Electron. 11(1), 135–140 (2005).
[CrossRef]

Sakaguchi, T.

X. Zhao, K. Hasebe, T. Sakaguchi, F. Koyama, C. J. Chang-Hasnain, N. Nishiyama, C. Caneau, and C. E. Zah, “Tunable optical equalizer using diffraction grating filters,” IEEE Photon. Technol. Lett. 20(18), 1590–1592 (2008).
[CrossRef]

Sim, J. S.

Y. H. Kwon, J. S. Choe, J. S. Sim, S. B. Kim, H. Yun, K. S. Choi, B. S. Choi, and E. S. Nam, “40 Gb/s traveling-wave electroabsorption modulator-integrated DFB lasers fabricated using selective area growth,” ETRI J. 31(6), 765–769 (2009).
[CrossRef]

Sun, C. K.

G. L. Li, C. K. Sun, S. A. Pappert, W. X. Chen, and P. K. L. Yu, “Ultra-speed traveling-wave electroabsorption modulator-design and analysis,” IEEE Trans. Microw. Theory Tech. 47(7), 1177–1183 (1999).
[CrossRef]

Suzaki, Y.

H. Fukano, Y. Akage, Y. Kawaguchi, Y. Suzaki, K. Kishi, T. Yamanaka, Y. Kondo, and H. Yasaka, “Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage,” IEEE J. Sel. Top. Quantum Electron. 13(5), 1129–1134 (2007).
[CrossRef]

Yamanaka, T.

H. Fukano, Y. Akage, Y. Kawaguchi, Y. Suzaki, K. Kishi, T. Yamanaka, Y. Kondo, and H. Yasaka, “Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage,” IEEE J. Sel. Top. Quantum Electron. 13(5), 1129–1134 (2007).
[CrossRef]

Yasaka, H.

H. Fukano, Y. Akage, Y. Kawaguchi, Y. Suzaki, K. Kishi, T. Yamanaka, Y. Kondo, and H. Yasaka, “Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage,” IEEE J. Sel. Top. Quantum Electron. 13(5), 1129–1134 (2007).
[CrossRef]

Yu, P. K. L.

G. L. Li, C. K. Sun, S. A. Pappert, W. X. Chen, and P. K. L. Yu, “Ultra-speed traveling-wave electroabsorption modulator-design and analysis,” IEEE Trans. Microw. Theory Tech. 47(7), 1177–1183 (1999).
[CrossRef]

Yun, H.

Y. H. Kwon, J. S. Choe, J. S. Sim, S. B. Kim, H. Yun, K. S. Choi, B. S. Choi, and E. S. Nam, “40 Gb/s traveling-wave electroabsorption modulator-integrated DFB lasers fabricated using selective area growth,” ETRI J. 31(6), 765–769 (2009).
[CrossRef]

Zah, C. E.

X. Zhao, K. Hasebe, T. Sakaguchi, F. Koyama, C. J. Chang-Hasnain, N. Nishiyama, C. Caneau, and C. E. Zah, “Tunable optical equalizer using diffraction grating filters,” IEEE Photon. Technol. Lett. 20(18), 1590–1592 (2008).
[CrossRef]

Zaizen, S.

Zhao, X.

X. Zhao, K. Hasebe, T. Sakaguchi, F. Koyama, C. J. Chang-Hasnain, N. Nishiyama, C. Caneau, and C. E. Zah, “Tunable optical equalizer using diffraction grating filters,” IEEE Photon. Technol. Lett. 20(18), 1590–1592 (2008).
[CrossRef]

ETRI J. (1)

Y. H. Kwon, J. S. Choe, J. S. Sim, S. B. Kim, H. Yun, K. S. Choi, B. S. Choi, and E. S. Nam, “40 Gb/s traveling-wave electroabsorption modulator-integrated DFB lasers fabricated using selective area growth,” ETRI J. 31(6), 765–769 (2009).
[CrossRef]

IEEE Commun. Mag. (1)

C. Cole, B. Huebner, and J. E. Johnson, “Photonic integration for high-volume, low-cost applications,” IEEE Commun. Mag. 47(3), S16–S22 (2009).
[CrossRef]

IEEE J. Sel. Top. Quantum Electron. (2)

Y. D. Bae, B. K. Kang, B. Park, S. M. Lee, Y. H. Kim, H. K. Kim, M. K. Park, I. Kim, and D. H. Jang, “Operation of 1550-nm electroabsorption-modulated laser at 40°C for 10-Gb/s, 40-km transmission,” IEEE J. Sel. Top. Quantum Electron. 11(1), 135–140 (2005).
[CrossRef]

H. Fukano, Y. Akage, Y. Kawaguchi, Y. Suzaki, K. Kishi, T. Yamanaka, Y. Kondo, and H. Yasaka, “Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage,” IEEE J. Sel. Top. Quantum Electron. 13(5), 1129–1134 (2007).
[CrossRef]

IEEE Photon. Technol. Lett. (1)

X. Zhao, K. Hasebe, T. Sakaguchi, F. Koyama, C. J. Chang-Hasnain, N. Nishiyama, C. Caneau, and C. E. Zah, “Tunable optical equalizer using diffraction grating filters,” IEEE Photon. Technol. Lett. 20(18), 1590–1592 (2008).
[CrossRef]

IEEE Trans. Microw. Theory Tech. (1)

G. L. Li, C. K. Sun, S. A. Pappert, W. X. Chen, and P. K. L. Yu, “Ultra-speed traveling-wave electroabsorption modulator-design and analysis,” IEEE Trans. Microw. Theory Tech. 47(7), 1177–1183 (1999).
[CrossRef]

J. Lightwave Technol. (1)

Other (4)

Y. Wang, Y. Cheng, F. Zhou, H. Zhu, L. Zhao, and W. Wang, “Design of high frequency compensation submount for 40Gbit/s lumped electroabsorption modulated lasers,” in Proc. OSA/ACP 2009, WL38 (2009).

Y. Luo, P. Cai, C. Sun, and B. Xiong, “High-speed AlGaInAs-MQW integrated EA modulator/DFB laser module based on identical epitaxial layer scheme for 40 Gb/s optic fiber communication systems,” in Proc. 19th IPRM 2007, WeB1–5 (2007).

T. Fujisawa, S. Kanazawa, N. Nunoya, H. Ishii, Y. Kawaguchi, A. Ohki, N. Fujiwara, K. Takahata, R. Iga, F. Kano, and H. Oohashi, “4×25-Gbit/s, 1.3-μm, monolithically integrated light source for 100-Gbit/s Ethernet,” in Proc. ECOC 2010, Th.9.D.1 (2010).

IEEE Standard 802.3ba.

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Figures (6)

Fig. 1
Fig. 1

(a) Equivalent circuit diagram of EML with input sources and load, (b) equivalent circuit of EAM. Zin represents the input impedance (=Zw1+1/(1/Zm+1/(Zw2+ZL))) and the bold line indicates the RF feeding line.

Fig. 2
Fig. 2

(a) Frequency-dependent RF gain G(f) and (b) RF return loss R(f) for various values of l1. In this calculation, l2 is assumed to be zero.

Fig. 3
Fig. 3

(a) Frequency-dependent RF gain G(f) and (b) RF return loss R(f) for various values of l2. In this calculation, l1 is assumed to be zero.

Fig. 4
Fig. 4

(a) 3 dB-bandwidth of the RF gain G(f) and (b) peak value of G(f) calculated as a function of l2 for various values of Cm. In these calculations, l1 is assumed to be 300 μm.

Fig. 5
Fig. 5

A photograph of the EML on the sub-mount.

Fig. 6
Fig. 6

Measured E/O responses and return losses of the EML packaged in type 1 (l1l2 ≅ 300 µm, dashed lines) and type 2 (l1 ≅ 300 µm, l2 ≅ 700um, solid lines) measured at the laser current of 70 mA and the bias voltage of –1.2V.

Tables (1)

Tables Icon

Table 1 Device parameters

Equations (2)

Equations on this page are rendered with MathJax. Learn more.

V m = Z w2 + Z L R S + Z w1 + Z w2 + Z L + ( R s + Z w1 )( Z 2 + Z wL ) / Z m V s
Z m = 1 1 R m +1/ ( jω C m + 1 R pho + 1 R j ) +jω C p

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