Abstract

In this paper we present GaInAsSb photodiodes heterogeneously integrated on SOI by BCB adhesive bonding for operation in the short-wave infrared wavelength region. Photodiodes using evanescent coupling between the silicon waveguide and the III-V structure are presented, showing a room temperature responsivity of 1.4A/W at 2.3µm. Photodiode structures using a diffraction grating to couple from the silicon waveguide layer to the integrated photodiode are reported, showing a responsivity of 0.4A/W at 2.2µm.

© 2012 OSA

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  1. B. Jalali and S. Fathpour, “Silicon photonics,” J. Lightwave Technol.24(12), 4600–4615 (2006).
    [CrossRef]
  2. K. De Vos, I. Bartolozzi, E. Schacht, P. Bienstman, and R. Baets, “Silicon-on-insulator microring resonator for sensitive and label-free biosensing,” Opt. Express15(12), 7610–7615 (2007).
    [CrossRef] [PubMed]
  3. J. T. Robinson, L. Chen, and M. Lipson, “On-chip gas detection in silicon optical microcavities,” Opt. Express16(6), 4296–4301 (2008).
    [CrossRef] [PubMed]
  4. S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, and D. Van Thourhout, “1310 nm Hybrid III-V/Si Fabry-Perot Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett.23(23), 1781–1783 (2011).
    [CrossRef]
  5. J. G. Crowder, S. D. Smith, A. Vass, and J. Keddie, “Infrared methods for gas detection,” in Mid-Infrared Semiconductor Optoelectronics (Springer, 2006).
  6. N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tournié, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Photon. Technol. Lett.23(23), 1760–1762 (2011).
    [CrossRef]
  7. E. M. P. Ryckeboer, A. Gassenq, N. Hattasan, B. Kuyken, L. Cerutti, J. B. Rodriguez, E. Tournié, G. Roelkens, W. Bogaerts, and R. Baets, “Integrated spectrometer and integrated detectors on silicon-on-insulator for short-wave infrared applications,” accepted for oral in Conference on Lasers and Electro-Optics (CLEO 2012).
  8. P. Dumon, D. Taillaert, V. Wiaux, S. Beckx, B. Luyssaert, J. Van Campenhout, D. Van Thourhout, and R. Baets, “SOI Nanophotonic Waveguide structures fabricated with deep UV lithography,” Photon. Nano. Fund. Appl.2(2), 81–86 (2004).
    [CrossRef]
  9. G. Roelkens, J. Brouckaert, D. Van Thourhout, R. Baets, R. Notzel, and M. Smit, “Adhesive bonding of InP/InGaAsP dies to processed silicon-on-insulator wafers using DVS-bis-benzocyclobutene,” J. Electrochem. Soc.153(12), G1015–G1019 (2006).
    [CrossRef]
  10. www.hellma-analytics.com
  11. www.epixfab.eu
  12. D. Vermeulen, S. Selvaraja, P. Verheyen, G. Lepage, W. Bogaerts, P. Absil, D. Van Thourhout, and G. Roelkens, “high-efficiency fiber-to-chip grating couplers realized using an advanced CMOS-compatible silicon-on-insulator platform,” Opt. Express18(17), 18278–18283 (2010).
    [CrossRef] [PubMed]
  13. P. Bienstman and R. Baets, “Optical modelling of photonic crystals and VCSELs using eigenmode expansion and perfectly matched layers,” Opt. Quantum Electron.33(4/5), 327–341 (2001).
    [CrossRef]
  14. S. Bogdanov, B.-M. Nguyen, A. M. Hoang, and M. Razeghi, “Surface leakage current reduction in long wavelength infrared type-II InAs/GaSb superlattice photodiodes,” Appl. Phys. Lett.98(18), 183501 (2011).
    [CrossRef]
  15. K. C. Nunna, S. L. Tan, C. J. Reyner, A. R. J. Marshall, B. Liang, A. Jallipalli, J. P. R. David, and D. L. Huffaker, “Short-wave infrared GaInAsSb photodiodes grown on GaAs substrate by interfacial misfit array technique,” IEEE Photon. Technol. Lett.24(3), 218–220 (2012).
    [CrossRef]
  16. B. Kuyken, N. Hattasan, D. Vermeulen, S. Selvaraja, W. Bogaerts, W. M. J. Green, R. Baets, and G. Roelkens, “Highly efficient broadband silicon-on-insulator grating couplers for the short wave infrared wavelength range,” in Integrated Photonics Research, Silicon and Nanophotonics (IPRSN 2011) paper IWC5 (2011).

2012

K. C. Nunna, S. L. Tan, C. J. Reyner, A. R. J. Marshall, B. Liang, A. Jallipalli, J. P. R. David, and D. L. Huffaker, “Short-wave infrared GaInAsSb photodiodes grown on GaAs substrate by interfacial misfit array technique,” IEEE Photon. Technol. Lett.24(3), 218–220 (2012).
[CrossRef]

2011

S. Bogdanov, B.-M. Nguyen, A. M. Hoang, and M. Razeghi, “Surface leakage current reduction in long wavelength infrared type-II InAs/GaSb superlattice photodiodes,” Appl. Phys. Lett.98(18), 183501 (2011).
[CrossRef]

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, and D. Van Thourhout, “1310 nm Hybrid III-V/Si Fabry-Perot Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett.23(23), 1781–1783 (2011).
[CrossRef]

N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tournié, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Photon. Technol. Lett.23(23), 1760–1762 (2011).
[CrossRef]

2010

2008

2007

2006

B. Jalali and S. Fathpour, “Silicon photonics,” J. Lightwave Technol.24(12), 4600–4615 (2006).
[CrossRef]

G. Roelkens, J. Brouckaert, D. Van Thourhout, R. Baets, R. Notzel, and M. Smit, “Adhesive bonding of InP/InGaAsP dies to processed silicon-on-insulator wafers using DVS-bis-benzocyclobutene,” J. Electrochem. Soc.153(12), G1015–G1019 (2006).
[CrossRef]

2004

P. Dumon, D. Taillaert, V. Wiaux, S. Beckx, B. Luyssaert, J. Van Campenhout, D. Van Thourhout, and R. Baets, “SOI Nanophotonic Waveguide structures fabricated with deep UV lithography,” Photon. Nano. Fund. Appl.2(2), 81–86 (2004).
[CrossRef]

2001

P. Bienstman and R. Baets, “Optical modelling of photonic crystals and VCSELs using eigenmode expansion and perfectly matched layers,” Opt. Quantum Electron.33(4/5), 327–341 (2001).
[CrossRef]

Absil, P.

Baets, R.

K. De Vos, I. Bartolozzi, E. Schacht, P. Bienstman, and R. Baets, “Silicon-on-insulator microring resonator for sensitive and label-free biosensing,” Opt. Express15(12), 7610–7615 (2007).
[CrossRef] [PubMed]

G. Roelkens, J. Brouckaert, D. Van Thourhout, R. Baets, R. Notzel, and M. Smit, “Adhesive bonding of InP/InGaAsP dies to processed silicon-on-insulator wafers using DVS-bis-benzocyclobutene,” J. Electrochem. Soc.153(12), G1015–G1019 (2006).
[CrossRef]

P. Dumon, D. Taillaert, V. Wiaux, S. Beckx, B. Luyssaert, J. Van Campenhout, D. Van Thourhout, and R. Baets, “SOI Nanophotonic Waveguide structures fabricated with deep UV lithography,” Photon. Nano. Fund. Appl.2(2), 81–86 (2004).
[CrossRef]

P. Bienstman and R. Baets, “Optical modelling of photonic crystals and VCSELs using eigenmode expansion and perfectly matched layers,” Opt. Quantum Electron.33(4/5), 327–341 (2001).
[CrossRef]

Bartolozzi, I.

Beckx, S.

P. Dumon, D. Taillaert, V. Wiaux, S. Beckx, B. Luyssaert, J. Van Campenhout, D. Van Thourhout, and R. Baets, “SOI Nanophotonic Waveguide structures fabricated with deep UV lithography,” Photon. Nano. Fund. Appl.2(2), 81–86 (2004).
[CrossRef]

Bienstman, P.

K. De Vos, I. Bartolozzi, E. Schacht, P. Bienstman, and R. Baets, “Silicon-on-insulator microring resonator for sensitive and label-free biosensing,” Opt. Express15(12), 7610–7615 (2007).
[CrossRef] [PubMed]

P. Bienstman and R. Baets, “Optical modelling of photonic crystals and VCSELs using eigenmode expansion and perfectly matched layers,” Opt. Quantum Electron.33(4/5), 327–341 (2001).
[CrossRef]

Bogaerts, W.

Bogdanov, S.

S. Bogdanov, B.-M. Nguyen, A. M. Hoang, and M. Razeghi, “Surface leakage current reduction in long wavelength infrared type-II InAs/GaSb superlattice photodiodes,” Appl. Phys. Lett.98(18), 183501 (2011).
[CrossRef]

Brouckaert, J.

G. Roelkens, J. Brouckaert, D. Van Thourhout, R. Baets, R. Notzel, and M. Smit, “Adhesive bonding of InP/InGaAsP dies to processed silicon-on-insulator wafers using DVS-bis-benzocyclobutene,” J. Electrochem. Soc.153(12), G1015–G1019 (2006).
[CrossRef]

Cerutti, L.

N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tournié, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Photon. Technol. Lett.23(23), 1760–1762 (2011).
[CrossRef]

Chen, L.

David, J. P. R.

K. C. Nunna, S. L. Tan, C. J. Reyner, A. R. J. Marshall, B. Liang, A. Jallipalli, J. P. R. David, and D. L. Huffaker, “Short-wave infrared GaInAsSb photodiodes grown on GaAs substrate by interfacial misfit array technique,” IEEE Photon. Technol. Lett.24(3), 218–220 (2012).
[CrossRef]

De Vos, K.

Dumon, P.

P. Dumon, D. Taillaert, V. Wiaux, S. Beckx, B. Luyssaert, J. Van Campenhout, D. Van Thourhout, and R. Baets, “SOI Nanophotonic Waveguide structures fabricated with deep UV lithography,” Photon. Nano. Fund. Appl.2(2), 81–86 (2004).
[CrossRef]

Fathpour, S.

Gassenq, A.

N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tournié, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Photon. Technol. Lett.23(23), 1760–1762 (2011).
[CrossRef]

Hattasan, N.

N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tournié, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Photon. Technol. Lett.23(23), 1760–1762 (2011).
[CrossRef]

Heck, J. M.

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, and D. Van Thourhout, “1310 nm Hybrid III-V/Si Fabry-Perot Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett.23(23), 1781–1783 (2011).
[CrossRef]

Hoang, A. M.

S. Bogdanov, B.-M. Nguyen, A. M. Hoang, and M. Razeghi, “Surface leakage current reduction in long wavelength infrared type-II InAs/GaSb superlattice photodiodes,” Appl. Phys. Lett.98(18), 183501 (2011).
[CrossRef]

Huffaker, D. L.

K. C. Nunna, S. L. Tan, C. J. Reyner, A. R. J. Marshall, B. Liang, A. Jallipalli, J. P. R. David, and D. L. Huffaker, “Short-wave infrared GaInAsSb photodiodes grown on GaAs substrate by interfacial misfit array technique,” IEEE Photon. Technol. Lett.24(3), 218–220 (2012).
[CrossRef]

Jalali, B.

Jallipalli, A.

K. C. Nunna, S. L. Tan, C. J. Reyner, A. R. J. Marshall, B. Liang, A. Jallipalli, J. P. R. David, and D. L. Huffaker, “Short-wave infrared GaInAsSb photodiodes grown on GaAs substrate by interfacial misfit array technique,” IEEE Photon. Technol. Lett.24(3), 218–220 (2012).
[CrossRef]

Jones, R.

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, and D. Van Thourhout, “1310 nm Hybrid III-V/Si Fabry-Perot Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett.23(23), 1781–1783 (2011).
[CrossRef]

Lepage, G.

Liang, B.

K. C. Nunna, S. L. Tan, C. J. Reyner, A. R. J. Marshall, B. Liang, A. Jallipalli, J. P. R. David, and D. L. Huffaker, “Short-wave infrared GaInAsSb photodiodes grown on GaAs substrate by interfacial misfit array technique,” IEEE Photon. Technol. Lett.24(3), 218–220 (2012).
[CrossRef]

Lipson, M.

Luyssaert, B.

P. Dumon, D. Taillaert, V. Wiaux, S. Beckx, B. Luyssaert, J. Van Campenhout, D. Van Thourhout, and R. Baets, “SOI Nanophotonic Waveguide structures fabricated with deep UV lithography,” Photon. Nano. Fund. Appl.2(2), 81–86 (2004).
[CrossRef]

Marshall, A. R. J.

K. C. Nunna, S. L. Tan, C. J. Reyner, A. R. J. Marshall, B. Liang, A. Jallipalli, J. P. R. David, and D. L. Huffaker, “Short-wave infrared GaInAsSb photodiodes grown on GaAs substrate by interfacial misfit array technique,” IEEE Photon. Technol. Lett.24(3), 218–220 (2012).
[CrossRef]

Nguyen, B.-M.

S. Bogdanov, B.-M. Nguyen, A. M. Hoang, and M. Razeghi, “Surface leakage current reduction in long wavelength infrared type-II InAs/GaSb superlattice photodiodes,” Appl. Phys. Lett.98(18), 183501 (2011).
[CrossRef]

Notzel, R.

G. Roelkens, J. Brouckaert, D. Van Thourhout, R. Baets, R. Notzel, and M. Smit, “Adhesive bonding of InP/InGaAsP dies to processed silicon-on-insulator wafers using DVS-bis-benzocyclobutene,” J. Electrochem. Soc.153(12), G1015–G1019 (2006).
[CrossRef]

Nunna, K. C.

K. C. Nunna, S. L. Tan, C. J. Reyner, A. R. J. Marshall, B. Liang, A. Jallipalli, J. P. R. David, and D. L. Huffaker, “Short-wave infrared GaInAsSb photodiodes grown on GaAs substrate by interfacial misfit array technique,” IEEE Photon. Technol. Lett.24(3), 218–220 (2012).
[CrossRef]

Razeghi, M.

S. Bogdanov, B.-M. Nguyen, A. M. Hoang, and M. Razeghi, “Surface leakage current reduction in long wavelength infrared type-II InAs/GaSb superlattice photodiodes,” Appl. Phys. Lett.98(18), 183501 (2011).
[CrossRef]

Reyner, C. J.

K. C. Nunna, S. L. Tan, C. J. Reyner, A. R. J. Marshall, B. Liang, A. Jallipalli, J. P. R. David, and D. L. Huffaker, “Short-wave infrared GaInAsSb photodiodes grown on GaAs substrate by interfacial misfit array technique,” IEEE Photon. Technol. Lett.24(3), 218–220 (2012).
[CrossRef]

Robinson, J. T.

Rodriguez, J. B.

N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tournié, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Photon. Technol. Lett.23(23), 1760–1762 (2011).
[CrossRef]

Roelkens, G.

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, and D. Van Thourhout, “1310 nm Hybrid III-V/Si Fabry-Perot Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett.23(23), 1781–1783 (2011).
[CrossRef]

N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tournié, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Photon. Technol. Lett.23(23), 1760–1762 (2011).
[CrossRef]

D. Vermeulen, S. Selvaraja, P. Verheyen, G. Lepage, W. Bogaerts, P. Absil, D. Van Thourhout, and G. Roelkens, “high-efficiency fiber-to-chip grating couplers realized using an advanced CMOS-compatible silicon-on-insulator platform,” Opt. Express18(17), 18278–18283 (2010).
[CrossRef] [PubMed]

G. Roelkens, J. Brouckaert, D. Van Thourhout, R. Baets, R. Notzel, and M. Smit, “Adhesive bonding of InP/InGaAsP dies to processed silicon-on-insulator wafers using DVS-bis-benzocyclobutene,” J. Electrochem. Soc.153(12), G1015–G1019 (2006).
[CrossRef]

Schacht, E.

Selvaraja, S.

Smit, M.

G. Roelkens, J. Brouckaert, D. Van Thourhout, R. Baets, R. Notzel, and M. Smit, “Adhesive bonding of InP/InGaAsP dies to processed silicon-on-insulator wafers using DVS-bis-benzocyclobutene,” J. Electrochem. Soc.153(12), G1015–G1019 (2006).
[CrossRef]

Stankovic, S.

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, and D. Van Thourhout, “1310 nm Hybrid III-V/Si Fabry-Perot Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett.23(23), 1781–1783 (2011).
[CrossRef]

Sysak, M. N.

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, and D. Van Thourhout, “1310 nm Hybrid III-V/Si Fabry-Perot Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett.23(23), 1781–1783 (2011).
[CrossRef]

Taillaert, D.

P. Dumon, D. Taillaert, V. Wiaux, S. Beckx, B. Luyssaert, J. Van Campenhout, D. Van Thourhout, and R. Baets, “SOI Nanophotonic Waveguide structures fabricated with deep UV lithography,” Photon. Nano. Fund. Appl.2(2), 81–86 (2004).
[CrossRef]

Tan, S. L.

K. C. Nunna, S. L. Tan, C. J. Reyner, A. R. J. Marshall, B. Liang, A. Jallipalli, J. P. R. David, and D. L. Huffaker, “Short-wave infrared GaInAsSb photodiodes grown on GaAs substrate by interfacial misfit array technique,” IEEE Photon. Technol. Lett.24(3), 218–220 (2012).
[CrossRef]

Tournié, E.

N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tournié, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Photon. Technol. Lett.23(23), 1760–1762 (2011).
[CrossRef]

Van Campenhout, J.

P. Dumon, D. Taillaert, V. Wiaux, S. Beckx, B. Luyssaert, J. Van Campenhout, D. Van Thourhout, and R. Baets, “SOI Nanophotonic Waveguide structures fabricated with deep UV lithography,” Photon. Nano. Fund. Appl.2(2), 81–86 (2004).
[CrossRef]

Van Thourhout, D.

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, and D. Van Thourhout, “1310 nm Hybrid III-V/Si Fabry-Perot Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett.23(23), 1781–1783 (2011).
[CrossRef]

D. Vermeulen, S. Selvaraja, P. Verheyen, G. Lepage, W. Bogaerts, P. Absil, D. Van Thourhout, and G. Roelkens, “high-efficiency fiber-to-chip grating couplers realized using an advanced CMOS-compatible silicon-on-insulator platform,” Opt. Express18(17), 18278–18283 (2010).
[CrossRef] [PubMed]

G. Roelkens, J. Brouckaert, D. Van Thourhout, R. Baets, R. Notzel, and M. Smit, “Adhesive bonding of InP/InGaAsP dies to processed silicon-on-insulator wafers using DVS-bis-benzocyclobutene,” J. Electrochem. Soc.153(12), G1015–G1019 (2006).
[CrossRef]

P. Dumon, D. Taillaert, V. Wiaux, S. Beckx, B. Luyssaert, J. Van Campenhout, D. Van Thourhout, and R. Baets, “SOI Nanophotonic Waveguide structures fabricated with deep UV lithography,” Photon. Nano. Fund. Appl.2(2), 81–86 (2004).
[CrossRef]

Verheyen, P.

Vermeulen, D.

Wiaux, V.

P. Dumon, D. Taillaert, V. Wiaux, S. Beckx, B. Luyssaert, J. Van Campenhout, D. Van Thourhout, and R. Baets, “SOI Nanophotonic Waveguide structures fabricated with deep UV lithography,” Photon. Nano. Fund. Appl.2(2), 81–86 (2004).
[CrossRef]

Appl. Phys. Lett.

S. Bogdanov, B.-M. Nguyen, A. M. Hoang, and M. Razeghi, “Surface leakage current reduction in long wavelength infrared type-II InAs/GaSb superlattice photodiodes,” Appl. Phys. Lett.98(18), 183501 (2011).
[CrossRef]

IEEE Photon. Technol. Lett.

K. C. Nunna, S. L. Tan, C. J. Reyner, A. R. J. Marshall, B. Liang, A. Jallipalli, J. P. R. David, and D. L. Huffaker, “Short-wave infrared GaInAsSb photodiodes grown on GaAs substrate by interfacial misfit array technique,” IEEE Photon. Technol. Lett.24(3), 218–220 (2012).
[CrossRef]

S. Stankovic, R. Jones, M. N. Sysak, J. M. Heck, G. Roelkens, and D. Van Thourhout, “1310 nm Hybrid III-V/Si Fabry-Perot Laser Based on Adhesive Bonding,” IEEE Photon. Technol. Lett.23(23), 1781–1783 (2011).
[CrossRef]

N. Hattasan, A. Gassenq, L. Cerutti, J. B. Rodriguez, E. Tournié, and G. Roelkens, “Heterogeneous integration of GaInAsSb p-i-n photodiodes on a silicon-on-insulator waveguide circuit,” IEEE Photon. Technol. Lett.23(23), 1760–1762 (2011).
[CrossRef]

J. Electrochem. Soc.

G. Roelkens, J. Brouckaert, D. Van Thourhout, R. Baets, R. Notzel, and M. Smit, “Adhesive bonding of InP/InGaAsP dies to processed silicon-on-insulator wafers using DVS-bis-benzocyclobutene,” J. Electrochem. Soc.153(12), G1015–G1019 (2006).
[CrossRef]

J. Lightwave Technol.

Opt. Express

Opt. Quantum Electron.

P. Bienstman and R. Baets, “Optical modelling of photonic crystals and VCSELs using eigenmode expansion and perfectly matched layers,” Opt. Quantum Electron.33(4/5), 327–341 (2001).
[CrossRef]

Photon. Nano. Fund. Appl.

P. Dumon, D. Taillaert, V. Wiaux, S. Beckx, B. Luyssaert, J. Van Campenhout, D. Van Thourhout, and R. Baets, “SOI Nanophotonic Waveguide structures fabricated with deep UV lithography,” Photon. Nano. Fund. Appl.2(2), 81–86 (2004).
[CrossRef]

Other

www.hellma-analytics.com

www.epixfab.eu

E. M. P. Ryckeboer, A. Gassenq, N. Hattasan, B. Kuyken, L. Cerutti, J. B. Rodriguez, E. Tournié, G. Roelkens, W. Bogaerts, and R. Baets, “Integrated spectrometer and integrated detectors on silicon-on-insulator for short-wave infrared applications,” accepted for oral in Conference on Lasers and Electro-Optics (CLEO 2012).

J. G. Crowder, S. D. Smith, A. Vass, and J. Keddie, “Infrared methods for gas detection,” in Mid-Infrared Semiconductor Optoelectronics (Springer, 2006).

B. Kuyken, N. Hattasan, D. Vermeulen, S. Selvaraja, W. Bogaerts, W. M. J. Green, R. Baets, and G. Roelkens, “Highly efficient broadband silicon-on-insulator grating couplers for the short wave infrared wavelength range,” in Integrated Photonics Research, Silicon and Nanophotonics (IPRSN 2011) paper IWC5 (2011).

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Figures (7)

Fig. 1
Fig. 1

(a) Photoluminescence and HRXRD measurement of the III-V heterostructure; (b) Schematic representation of the bonded epistack on a Si waveguide;

Fig. 2
Fig. 2

BCB absorption versus wavelength measured using a Fourier Transform Infrared (FTIR) spectrometer

Fig. 3
Fig. 3

Schematic representation of the considered coupling structures: (a) Side view; (b) Ez field plot of the evanescently coupled devices and devices using grating-assisted coupling (modeling using CAMFR [13]); (c) resulting absorbed power fraction as function of the BCB thickness for design 1, 2-A and 2-B.

Fig. 4
Fig. 4

SWIR integrated photodiodes using evanescent coupling to couple light from the waveguide to the photodiode: (a) top view; (b) SEM cross section

Fig. 5
Fig. 5

(a) system responsivity (S = Iphoto/Pfiber); (b) grating coupler efficiency and (c) deduced intrinsic photodiode responsivity and minimum evanescent coupling efficiency as a function of wavelength

Fig. 6
Fig. 6

Photodiode leakage study: (a) I(V) curve as a function of temperature; (b) dark current density at −0.1V as a function of the perimeter to surface ratio (bonded device structure)

Fig. 7
Fig. 7

SWIR integrated photodiodes using a grating coupler to couple light from the waveguide to the photodiode: (a) I(V) as function of the optical power in the fiber; (b) top view and SEM cross section

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