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Observation of unusual optical transitions in thin-film Cu(In,Ga)Se2 solar cells

Yu-Kuang Liao, Shou-Yi Kuo, Woei-Tyng Lin, Fang-I Lai, Dan-Hua Hsieh, Min-An Tsai, Shih-Chen Chen, Ding-Wen Chiou, Jen-Chuang Chang, Kaung-Hsiung Wu, Shun-Jen Cheng, and Hao-Chung Kuo

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Abstract

In this paper, we examine photoluminescence spectra of Cu(In,Ga)Se2 (CIGS) via temperature-dependent and power-dependent photoluminescence (PL). Donor-acceptor pair (DAP) transition, near-band-edge transition were identified by their activation energies. S-shaped displacement of peak position was observed and was attributed to carrier confinement caused by potential fluctuation. This coincides well with the obtained activation energy at low temperature. We also present a model for transition from VSe to VIn and to VCu which illustrates competing mechanisms between DAPs recombinations.

©2012 Optical Society of America

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Figures (3)
Fig. 1
Fig. 1 (a) The PL spectra of the CIGS thin film under temperatures from 10 K to 300 K. Inset is the fitting result of PL spectrum at 10 K using Gaussian distribution, and (b) plots of the four PL emission peak positions at different temperatures.

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Fig. 2
Fig. 2 (a) Peak position versus temperature of p3 with result of fitting to modified Varshni Eq. and (b) the Arrhenius plot of p3 and both of their corresponding fitting curves. (c) The energy level diagram of the CIGS thin film.

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Fig. 3
Fig. 3 (a) The PL spectrum of the CIGS thin film under excitation powers from 1 mW to 50 mW. (b) PL intensity of p1 (blue line) and p2 (red line) with temperature. Inset shows the schematic representation of proposed DAP transition. (c) A schematic illustration for conditions under low excitation and high excitation.

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Equations (4)

Equations on this page are rendered with MathJax. Learn more.

E peak ( T )= E g ( 0 )− α T 2 β+T − σ 2 k B T ,
I( T )= I( 0 ) 1+Aexp( − E a k B T )+Bexp( − E b k B T ) ,
ℏω= E g −( E A + E D )+ e 2 4π ε 0 εR ,
1 τ = 2π ℏ | 〈 f| d → • E → ( r → e ) |i 〉 | 2 ρ f ,
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