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Highly efficient CdS-quantum-dot-sensitized GaAs solar cells

Chien-Chung Lin, Hsin-Chu Chen, Yu Lin Tsai, Hau-Vei Han, Huai-Shiang Shih, Yi-An Chang, Hao-Chung Kuo, and Peichen Yu

Open Access Open Access

Abstract

We demonstrate a hybrid design of traditional GaAs-based solar cell combined with colloidal CdS quantum dots. With anti-reflective feature at long wavelength and down-conversion at UV regime, the CdS quantum dot effectively enhance the overall power conversion efficiency by as high as 18.9% compared to traditional GaAs-based device. A more detailed study showed an increase of surface photoconductivity due to UV presence, and the fill factor of the solar cell can be improved accordingly.

©2012 Optical Society of America

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Figures (7)
Fig. 1
Fig. 1 A schematic plot of the fabricated single-junction GaAs solar cell with CdS QDs.

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Fig. 2
Fig. 2 (a) TEM of CdS nanocrystal on a GaAs solar cell; (b) the energy dispersive spectrometer (EDS) was taken by a JEOL JEM-2100F system.

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Fig. 3
Fig. 3 (a) UV-Visible absorbance (red) and photoluminescence (blue) spectra of CdS QDs measure in toluene. The PLE spectrum was taken at the maximum of PL intensity (~470 nm). For the PL spectrum, the sample was excited by a light beam with 365 nm. The inset is the CdS quantum dot solution under UV excitation. (b) The measured reflectance spectra for QD-coated, No-QD coated, and AR-coated solar cells.

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Fig. 4
Fig. 4 Photovoltaic I–V characteristics of QD-coated, No-QD coated, and AR-coated solar cells.

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Fig. 5
Fig. 5 (a) Measurement of External quantum efficiency of QD-coated, No-QD coated, and AR-coated solar cells. (b) Enhancement of EQE between QD-coated and No-QD coated devices. Peak at ~310 nm indicates photon down-conversion.

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Fig. 6
Fig. 6 IV Measurement with UV light. The inset is the filtered UV PCE of the CQD/GaAs cell (blue line) and the efficiency enhancement (ηCQD/ηno CQD, green line).

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Fig. 7
Fig. 7 The distribution of detected currents of QD on GaAs surface with and without UV lamp on. The pink and blue vertical lines indicate the average currents from the measurement. When UV lamp is off, the average current is 2.10pA. If we turn on the UV lamp, the average jump up to 3.69pA (an 76% increase). The inset is the conductive AFM scanning plot.

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Tables (1)

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Table 1 A Summarized Current-Voltage Characteristics of GaAs I, GaAs II, and GaAs III Solar Cells

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Equations (1)

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J sc = e hc ∫ λ×EQE(λ)× I AM1.5G (λ)dλ
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