Abstract

A distributed III-V-on-Si electroabsorption modulator based on an asymmetric segmented electrode has been developed on the hybrid silicon platform for the 1.3 μm transmission window. The measured modulation response shows a 2 dB drop at 67 GHz and an extrapolated 3 dB bandwidth of 74 GHz. Large signal measurements show clearly open eye diagrams at 50 Gb/s. An extinction ratio of 9.6 dB for back to back transmission and an extinction ratio of 9.4 dB after 16 km transmission were obtained with a drive voltage of 2.2 V.

© 2012 OSA

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2012 (1)

D. Thomson, F. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Mashanovich, and G. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[CrossRef]

2011 (5)

2010 (4)

D. Liang, G. Roelkens, R. Baets, and J. Bowers, “Hybrid integrated platforms for silicon photonics,” Materials 3(3), 1782–1802 (2010).
[CrossRef]

D. Liang and J. Bowers, “Recent progress in lasers on silicon,” Nat. Photonics 4(8), 511–517 (2010).
[CrossRef]

H. H. Chang, Y. H. Kuo, R. Jones, A. Barkai, and J. E. Bowers, “Integrated hybrid silicon triplexer,” Opt. Express 18(23), 23891–23899 (2010).
[CrossRef] [PubMed]

M. Chacinski, U. Westergren, L. Thylen, B. Stoltz, J. Rosenzweig, R. Driad, R. E. Makon, J. Li, and A. Steffan, “ETDM Transmitter Module for 100-Gb/s Ethernet,” IEEE Photon. Technol. Lett. 22(2), 70–72 (2010).
[CrossRef]

2008 (1)

Y. Tang, Y. Yu, Y. Ye, U. Westergren, and S. He, “Design and optimization of an arbitrarily segmented traveling wave electrode for an ultrahigh speed electroabsorption modulator,” Opt. Commun. 281(20), 5177–5182 (2008).
[CrossRef]

2007 (1)

Z. Jia, J. Yu, A. Chowdhury, G. Ellinas, and G.-K. Chang, “Simultaneous generation of independent wired and wireless services using a single modulator in millimeter-wave-band Radio-Over-Fiber systems,” IEEE Photon. Technol. Lett. 19(20), 1691–1693 (2007).
[CrossRef]

2004 (1)

2003 (1)

M. Shirai, H. Arimoto, K. Watanabe, A. Taike, K. Shinoda, J. Shimizu, H. Sato, T. Ido, T. Tsuchiya, M. Aoki, S. Tsuji, N. Sasada, S. Tada, and M. Okayasu, “40 Gbit/s electroabsorption modulators with impedance-controlled electrodes,” Electron. Lett. 39(9), 733–735 (2003).
[CrossRef]

2000 (1)

D. A. Miller, “Rationale and challenges for optical interconnects to electronic chips,” Proc. IEEE 88(6), 728–749 (2000).
[CrossRef]

1996 (1)

Alic, N.

D. Thomson, F. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Mashanovich, and G. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[CrossRef]

Alloatti, L.

Aoki, M.

M. Shirai, H. Arimoto, K. Watanabe, A. Taike, K. Shinoda, J. Shimizu, H. Sato, T. Ido, T. Tsuchiya, M. Aoki, S. Tsuji, N. Sasada, S. Tada, and M. Okayasu, “40 Gbit/s electroabsorption modulators with impedance-controlled electrodes,” Electron. Lett. 39(9), 733–735 (2003).
[CrossRef]

Arimoto, H.

M. Shirai, H. Arimoto, K. Watanabe, A. Taike, K. Shinoda, J. Shimizu, H. Sato, T. Ido, T. Tsuchiya, M. Aoki, S. Tsuji, N. Sasada, S. Tada, and M. Okayasu, “40 Gbit/s electroabsorption modulators with impedance-controlled electrodes,” Electron. Lett. 39(9), 733–735 (2003).
[CrossRef]

Asghari, M.

Baets, R.

Barkai, A.

Barklund, A.

Bogaerts, W.

Bowers, J.

D. Liang, G. Roelkens, R. Baets, and J. Bowers, “Hybrid integrated platforms for silicon photonics,” Materials 3(3), 1782–1802 (2010).
[CrossRef]

D. Liang and J. Bowers, “Recent progress in lasers on silicon,” Nat. Photonics 4(8), 511–517 (2010).
[CrossRef]

Bowers, J. E.

Chacinski, M.

M. Chacinski, U. Westergren, L. Thylen, B. Stoltz, J. Rosenzweig, R. Driad, R. E. Makon, J. Li, and A. Steffan, “ETDM Transmitter Module for 100-Gb/s Ethernet,” IEEE Photon. Technol. Lett. 22(2), 70–72 (2010).
[CrossRef]

Chang, G.-K.

Z. Jia, J. Yu, A. Chowdhury, G. Ellinas, and G.-K. Chang, “Simultaneous generation of independent wired and wireless services using a single modulator in millimeter-wave-band Radio-Over-Fiber systems,” IEEE Photon. Technol. Lett. 19(20), 1691–1693 (2007).
[CrossRef]

Chang, H. H.

Chen, H.-W.

Chowdhury, A.

Z. Jia, J. Yu, A. Chowdhury, G. Ellinas, and G.-K. Chang, “Simultaneous generation of independent wired and wireless services using a single modulator in millimeter-wave-band Radio-Over-Fiber systems,” IEEE Photon. Technol. Lett. 19(20), 1691–1693 (2007).
[CrossRef]

Cunningham, J.

Dinu, R.

Dong, P.

Driad, R.

M. Chacinski, U. Westergren, L. Thylen, B. Stoltz, J. Rosenzweig, R. Driad, R. E. Makon, J. Li, and A. Steffan, “ETDM Transmitter Module for 100-Gb/s Ethernet,” IEEE Photon. Technol. Lett. 22(2), 70–72 (2010).
[CrossRef]

Dumon, P.

Ellinas, G.

Z. Jia, J. Yu, A. Chowdhury, G. Ellinas, and G.-K. Chang, “Simultaneous generation of independent wired and wireless services using a single modulator in millimeter-wave-band Radio-Over-Fiber systems,” IEEE Photon. Technol. Lett. 19(20), 1691–1693 (2007).
[CrossRef]

Eriksson, U.

Fedeli, J.

Fedeli, J.-M.

D. Thomson, F. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Mashanovich, and G. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[CrossRef]

Feng, D.

Feng, N.-N.

Fong, J.

Fournier, M.

Freude, W.

Fujisawa, T.

T. Fujisawa, K. Takahata, W. Kobayashi, T. Tadokoro, N. Fujiwara, S. Kanazawa, and F. Kano, “1.3 μm, 50 Gbit/s electroabsorption modulators integrated with DFB laser for beyond 100G parallel LAN applications,” Electron. Lett. 47(12), 708–710 (2011).
[CrossRef]

Fujiwara, N.

T. Fujisawa, K. Takahata, W. Kobayashi, T. Tadokoro, N. Fujiwara, S. Kanazawa, and F. Kano, “1.3 μm, 50 Gbit/s electroabsorption modulators integrated with DFB laser for beyond 100G parallel LAN applications,” Electron. Lett. 47(12), 708–710 (2011).
[CrossRef]

Gardes, F.

D. Thomson, F. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Mashanovich, and G. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[CrossRef]

Geng, B.

M. Liu, X. Yin, E. Ulin-Avila, B. Geng, T. Zentgraf, L. Ju, F. Wang, and X. Zhang, “A graphene-based broadband optical modulator,” Nature 474(7349), 64–67 (2011).
[CrossRef] [PubMed]

He, S.

Y. Tang, Y. Yu, Y. Ye, U. Westergren, and S. He, “Design and optimization of an arbitrarily segmented traveling wave electrode for an ultrahigh speed electroabsorption modulator,” Opt. Commun. 281(20), 5177–5182 (2008).
[CrossRef]

Hillerkuss, D.

Hu, Y.

D. Thomson, F. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Mashanovich, and G. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[CrossRef]

Ido, T.

M. Shirai, H. Arimoto, K. Watanabe, A. Taike, K. Shinoda, J. Shimizu, H. Sato, T. Ido, T. Tsuchiya, M. Aoki, S. Tsuji, N. Sasada, S. Tada, and M. Okayasu, “40 Gbit/s electroabsorption modulators with impedance-controlled electrodes,” Electron. Lett. 39(9), 733–735 (2003).
[CrossRef]

Irmscher, S.

Jain, S.

Jia, Z.

Z. Jia, J. Yu, A. Chowdhury, G. Ellinas, and G.-K. Chang, “Simultaneous generation of independent wired and wireless services using a single modulator in millimeter-wave-band Radio-Over-Fiber systems,” IEEE Photon. Technol. Lett. 19(20), 1691–1693 (2007).
[CrossRef]

Jones, R.

Ju, L.

M. Liu, X. Yin, E. Ulin-Avila, B. Geng, T. Zentgraf, L. Ju, F. Wang, and X. Zhang, “A graphene-based broadband optical modulator,” Nature 474(7349), 64–67 (2011).
[CrossRef] [PubMed]

Kanazawa, S.

T. Fujisawa, K. Takahata, W. Kobayashi, T. Tadokoro, N. Fujiwara, S. Kanazawa, and F. Kano, “1.3 μm, 50 Gbit/s electroabsorption modulators integrated with DFB laser for beyond 100G parallel LAN applications,” Electron. Lett. 47(12), 708–710 (2011).
[CrossRef]

Kano, F.

T. Fujisawa, K. Takahata, W. Kobayashi, T. Tadokoro, N. Fujiwara, S. Kanazawa, and F. Kano, “1.3 μm, 50 Gbit/s electroabsorption modulators integrated with DFB laser for beyond 100G parallel LAN applications,” Electron. Lett. 47(12), 708–710 (2011).
[CrossRef]

Kobayashi, W.

T. Fujisawa, K. Takahata, W. Kobayashi, T. Tadokoro, N. Fujiwara, S. Kanazawa, and F. Kano, “1.3 μm, 50 Gbit/s electroabsorption modulators integrated with DFB laser for beyond 100G parallel LAN applications,” Electron. Lett. 47(12), 708–710 (2011).
[CrossRef]

Koos, C.

Korn, D.

Krishnamoorthy, A. V.

Kung, C.-C.

Kuo, B.

D. Thomson, F. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Mashanovich, and G. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[CrossRef]

Kuo, Y. H.

Leuthold, J.

Lewén, R.

Li, J.

Liang, D.

D. Liang, G. Roelkens, R. Baets, and J. Bowers, “Hybrid integrated platforms for silicon photonics,” Materials 3(3), 1782–1802 (2010).
[CrossRef]

D. Liang and J. Bowers, “Recent progress in lasers on silicon,” Nat. Photonics 4(8), 511–517 (2010).
[CrossRef]

Liang, H.

Liao, S.

Liu, M.

M. Liu, X. Yin, E. Ulin-Avila, B. Geng, T. Zentgraf, L. Ju, F. Wang, and X. Zhang, “A graphene-based broadband optical modulator,” Nature 474(7349), 64–67 (2011).
[CrossRef] [PubMed]

Luo, Y.

Makon, R. E.

M. Chacinski, U. Westergren, L. Thylen, B. Stoltz, J. Rosenzweig, R. Driad, R. E. Makon, J. Li, and A. Steffan, “ETDM Transmitter Module for 100-Gb/s Ethernet,” IEEE Photon. Technol. Lett. 22(2), 70–72 (2010).
[CrossRef]

Maleki, L.

Mashanovich, G.

D. Thomson, F. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Mashanovich, and G. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[CrossRef]

Miller, D. A.

D. A. Miller, “Rationale and challenges for optical interconnects to electronic chips,” Proc. IEEE 88(6), 728–749 (2000).
[CrossRef]

Myslivets, E.

D. Thomson, F. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Mashanovich, and G. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[CrossRef]

Okayasu, M.

M. Shirai, H. Arimoto, K. Watanabe, A. Taike, K. Shinoda, J. Shimizu, H. Sato, T. Ido, T. Tsuchiya, M. Aoki, S. Tsuji, N. Sasada, S. Tada, and M. Okayasu, “40 Gbit/s electroabsorption modulators with impedance-controlled electrodes,” Electron. Lett. 39(9), 733–735 (2003).
[CrossRef]

Palmer, R.

Peters, J. D.

Qian, W.

Radic, S.

D. Thomson, F. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Mashanovich, and G. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[CrossRef]

Reed, G.

D. Thomson, F. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Mashanovich, and G. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[CrossRef]

Roelkens, G.

D. Liang, G. Roelkens, R. Baets, and J. Bowers, “Hybrid integrated platforms for silicon photonics,” Materials 3(3), 1782–1802 (2010).
[CrossRef]

Rosenzweig, J.

M. Chacinski, U. Westergren, L. Thylen, B. Stoltz, J. Rosenzweig, R. Driad, R. E. Makon, J. Li, and A. Steffan, “ETDM Transmitter Module for 100-Gb/s Ethernet,” IEEE Photon. Technol. Lett. 22(2), 70–72 (2010).
[CrossRef]

Sasada, N.

M. Shirai, H. Arimoto, K. Watanabe, A. Taike, K. Shinoda, J. Shimizu, H. Sato, T. Ido, T. Tsuchiya, M. Aoki, S. Tsuji, N. Sasada, S. Tada, and M. Okayasu, “40 Gbit/s electroabsorption modulators with impedance-controlled electrodes,” Electron. Lett. 39(9), 733–735 (2003).
[CrossRef]

Sato, H.

M. Shirai, H. Arimoto, K. Watanabe, A. Taike, K. Shinoda, J. Shimizu, H. Sato, T. Ido, T. Tsuchiya, M. Aoki, S. Tsuji, N. Sasada, S. Tada, and M. Okayasu, “40 Gbit/s electroabsorption modulators with impedance-controlled electrodes,” Electron. Lett. 39(9), 733–735 (2003).
[CrossRef]

Shafiiha, R.

Shimizu, J.

M. Shirai, H. Arimoto, K. Watanabe, A. Taike, K. Shinoda, J. Shimizu, H. Sato, T. Ido, T. Tsuchiya, M. Aoki, S. Tsuji, N. Sasada, S. Tada, and M. Okayasu, “40 Gbit/s electroabsorption modulators with impedance-controlled electrodes,” Electron. Lett. 39(9), 733–735 (2003).
[CrossRef]

Shinoda, K.

M. Shirai, H. Arimoto, K. Watanabe, A. Taike, K. Shinoda, J. Shimizu, H. Sato, T. Ido, T. Tsuchiya, M. Aoki, S. Tsuji, N. Sasada, S. Tada, and M. Okayasu, “40 Gbit/s electroabsorption modulators with impedance-controlled electrodes,” Electron. Lett. 39(9), 733–735 (2003).
[CrossRef]

Shirai, M.

M. Shirai, H. Arimoto, K. Watanabe, A. Taike, K. Shinoda, J. Shimizu, H. Sato, T. Ido, T. Tsuchiya, M. Aoki, S. Tsuji, N. Sasada, S. Tada, and M. Okayasu, “40 Gbit/s electroabsorption modulators with impedance-controlled electrodes,” Electron. Lett. 39(9), 733–735 (2003).
[CrossRef]

Steffan, A.

M. Chacinski, U. Westergren, L. Thylen, B. Stoltz, J. Rosenzweig, R. Driad, R. E. Makon, J. Li, and A. Steffan, “ETDM Transmitter Module for 100-Gb/s Ethernet,” IEEE Photon. Technol. Lett. 22(2), 70–72 (2010).
[CrossRef]

Stoltz, B.

M. Chacinski, U. Westergren, L. Thylen, B. Stoltz, J. Rosenzweig, R. Driad, R. E. Makon, J. Li, and A. Steffan, “ETDM Transmitter Module for 100-Gb/s Ethernet,” IEEE Photon. Technol. Lett. 22(2), 70–72 (2010).
[CrossRef]

Tada, S.

M. Shirai, H. Arimoto, K. Watanabe, A. Taike, K. Shinoda, J. Shimizu, H. Sato, T. Ido, T. Tsuchiya, M. Aoki, S. Tsuji, N. Sasada, S. Tada, and M. Okayasu, “40 Gbit/s electroabsorption modulators with impedance-controlled electrodes,” Electron. Lett. 39(9), 733–735 (2003).
[CrossRef]

Tadokoro, T.

T. Fujisawa, K. Takahata, W. Kobayashi, T. Tadokoro, N. Fujiwara, S. Kanazawa, and F. Kano, “1.3 μm, 50 Gbit/s electroabsorption modulators integrated with DFB laser for beyond 100G parallel LAN applications,” Electron. Lett. 47(12), 708–710 (2011).
[CrossRef]

Taike, A.

M. Shirai, H. Arimoto, K. Watanabe, A. Taike, K. Shinoda, J. Shimizu, H. Sato, T. Ido, T. Tsuchiya, M. Aoki, S. Tsuji, N. Sasada, S. Tada, and M. Okayasu, “40 Gbit/s electroabsorption modulators with impedance-controlled electrodes,” Electron. Lett. 39(9), 733–735 (2003).
[CrossRef]

Takahata, K.

T. Fujisawa, K. Takahata, W. Kobayashi, T. Tadokoro, N. Fujiwara, S. Kanazawa, and F. Kano, “1.3 μm, 50 Gbit/s electroabsorption modulators integrated with DFB laser for beyond 100G parallel LAN applications,” Electron. Lett. 47(12), 708–710 (2011).
[CrossRef]

Tang, Y.

Y. Tang, H.-W. Chen, S. Jain, J. D. Peters, U. Westergren, and J. E. Bowers, “50 Gb/s hybrid silicon traveling-wave electroabsorption modulator,” Opt. Express 19(7), 5811–5816 (2011).
[CrossRef] [PubMed]

Y. Tang, Y. Yu, Y. Ye, U. Westergren, and S. He, “Design and optimization of an arbitrarily segmented traveling wave electrode for an ultrahigh speed electroabsorption modulator,” Opt. Commun. 281(20), 5177–5182 (2008).
[CrossRef]

Thomson, D.

D. Thomson, F. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Mashanovich, and G. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[CrossRef]

Thylen, L.

M. Chacinski, U. Westergren, L. Thylen, B. Stoltz, J. Rosenzweig, R. Driad, R. E. Makon, J. Li, and A. Steffan, “ETDM Transmitter Module for 100-Gb/s Ethernet,” IEEE Photon. Technol. Lett. 22(2), 70–72 (2010).
[CrossRef]

Thylén, L.

Tsuchiya, T.

M. Shirai, H. Arimoto, K. Watanabe, A. Taike, K. Shinoda, J. Shimizu, H. Sato, T. Ido, T. Tsuchiya, M. Aoki, S. Tsuji, N. Sasada, S. Tada, and M. Okayasu, “40 Gbit/s electroabsorption modulators with impedance-controlled electrodes,” Electron. Lett. 39(9), 733–735 (2003).
[CrossRef]

Tsuji, S.

M. Shirai, H. Arimoto, K. Watanabe, A. Taike, K. Shinoda, J. Shimizu, H. Sato, T. Ido, T. Tsuchiya, M. Aoki, S. Tsuji, N. Sasada, S. Tada, and M. Okayasu, “40 Gbit/s electroabsorption modulators with impedance-controlled electrodes,” Electron. Lett. 39(9), 733–735 (2003).
[CrossRef]

Ulin-Avila, E.

M. Liu, X. Yin, E. Ulin-Avila, B. Geng, T. Zentgraf, L. Ju, F. Wang, and X. Zhang, “A graphene-based broadband optical modulator,” Nature 474(7349), 64–67 (2011).
[CrossRef] [PubMed]

Wang, F.

M. Liu, X. Yin, E. Ulin-Avila, B. Geng, T. Zentgraf, L. Ju, F. Wang, and X. Zhang, “A graphene-based broadband optical modulator,” Nature 474(7349), 64–67 (2011).
[CrossRef] [PubMed]

Wang, X.

Watanabe, K.

M. Shirai, H. Arimoto, K. Watanabe, A. Taike, K. Shinoda, J. Shimizu, H. Sato, T. Ido, T. Tsuchiya, M. Aoki, S. Tsuji, N. Sasada, S. Tada, and M. Okayasu, “40 Gbit/s electroabsorption modulators with impedance-controlled electrodes,” Electron. Lett. 39(9), 733–735 (2003).
[CrossRef]

Westergren, U.

Y. Tang, H.-W. Chen, S. Jain, J. D. Peters, U. Westergren, and J. E. Bowers, “50 Gb/s hybrid silicon traveling-wave electroabsorption modulator,” Opt. Express 19(7), 5811–5816 (2011).
[CrossRef] [PubMed]

M. Chacinski, U. Westergren, L. Thylen, B. Stoltz, J. Rosenzweig, R. Driad, R. E. Makon, J. Li, and A. Steffan, “ETDM Transmitter Module for 100-Gb/s Ethernet,” IEEE Photon. Technol. Lett. 22(2), 70–72 (2010).
[CrossRef]

Y. Tang, Y. Yu, Y. Ye, U. Westergren, and S. He, “Design and optimization of an arbitrarily segmented traveling wave electrode for an ultrahigh speed electroabsorption modulator,” Opt. Commun. 281(20), 5177–5182 (2008).
[CrossRef]

R. Lewén, S. Irmscher, U. Westergren, L. Thylén, and U. Eriksson, “Segmented transmission-line electroabsorption modulators,” J. Lightwave Technol. 22(1), 172–179 (2004).
[CrossRef]

Wieland, J.

Yao, X. S.

Ye, Y.

Y. Tang, Y. Yu, Y. Ye, U. Westergren, and S. He, “Design and optimization of an arbitrarily segmented traveling wave electrode for an ultrahigh speed electroabsorption modulator,” Opt. Commun. 281(20), 5177–5182 (2008).
[CrossRef]

Yin, X.

M. Liu, X. Yin, E. Ulin-Avila, B. Geng, T. Zentgraf, L. Ju, F. Wang, and X. Zhang, “A graphene-based broadband optical modulator,” Nature 474(7349), 64–67 (2011).
[CrossRef] [PubMed]

Yu, H.

Yu, J.

Z. Jia, J. Yu, A. Chowdhury, G. Ellinas, and G.-K. Chang, “Simultaneous generation of independent wired and wireless services using a single modulator in millimeter-wave-band Radio-Over-Fiber systems,” IEEE Photon. Technol. Lett. 19(20), 1691–1693 (2007).
[CrossRef]

Yu, Y.

Y. Tang, Y. Yu, Y. Ye, U. Westergren, and S. He, “Design and optimization of an arbitrarily segmented traveling wave electrode for an ultrahigh speed electroabsorption modulator,” Opt. Commun. 281(20), 5177–5182 (2008).
[CrossRef]

Zentgraf, T.

M. Liu, X. Yin, E. Ulin-Avila, B. Geng, T. Zentgraf, L. Ju, F. Wang, and X. Zhang, “A graphene-based broadband optical modulator,” Nature 474(7349), 64–67 (2011).
[CrossRef] [PubMed]

Zhang, X.

M. Liu, X. Yin, E. Ulin-Avila, B. Geng, T. Zentgraf, L. Ju, F. Wang, and X. Zhang, “A graphene-based broadband optical modulator,” Nature 474(7349), 64–67 (2011).
[CrossRef] [PubMed]

Zlatanovic, S.

D. Thomson, F. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Mashanovich, and G. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[CrossRef]

Electron. Lett. (2)

T. Fujisawa, K. Takahata, W. Kobayashi, T. Tadokoro, N. Fujiwara, S. Kanazawa, and F. Kano, “1.3 μm, 50 Gbit/s electroabsorption modulators integrated with DFB laser for beyond 100G parallel LAN applications,” Electron. Lett. 47(12), 708–710 (2011).
[CrossRef]

M. Shirai, H. Arimoto, K. Watanabe, A. Taike, K. Shinoda, J. Shimizu, H. Sato, T. Ido, T. Tsuchiya, M. Aoki, S. Tsuji, N. Sasada, S. Tada, and M. Okayasu, “40 Gbit/s electroabsorption modulators with impedance-controlled electrodes,” Electron. Lett. 39(9), 733–735 (2003).
[CrossRef]

IEEE Photon. Technol. Lett. (3)

M. Chacinski, U. Westergren, L. Thylen, B. Stoltz, J. Rosenzweig, R. Driad, R. E. Makon, J. Li, and A. Steffan, “ETDM Transmitter Module for 100-Gb/s Ethernet,” IEEE Photon. Technol. Lett. 22(2), 70–72 (2010).
[CrossRef]

Z. Jia, J. Yu, A. Chowdhury, G. Ellinas, and G.-K. Chang, “Simultaneous generation of independent wired and wireless services using a single modulator in millimeter-wave-band Radio-Over-Fiber systems,” IEEE Photon. Technol. Lett. 19(20), 1691–1693 (2007).
[CrossRef]

D. Thomson, F. Gardes, J.-M. Fedeli, S. Zlatanovic, Y. Hu, B. Kuo, E. Myslivets, N. Alic, S. Radic, G. Mashanovich, and G. Reed, “50-Gb/s silicon optical modulator,” IEEE Photon. Technol. Lett. 24(4), 234–236 (2012).
[CrossRef]

J. Lightwave Technol. (1)

J. Opt. Soc. Am. B (1)

Materials (1)

D. Liang, G. Roelkens, R. Baets, and J. Bowers, “Hybrid integrated platforms for silicon photonics,” Materials 3(3), 1782–1802 (2010).
[CrossRef]

Nat. Photonics (1)

D. Liang and J. Bowers, “Recent progress in lasers on silicon,” Nat. Photonics 4(8), 511–517 (2010).
[CrossRef]

Nature (1)

M. Liu, X. Yin, E. Ulin-Avila, B. Geng, T. Zentgraf, L. Ju, F. Wang, and X. Zhang, “A graphene-based broadband optical modulator,” Nature 474(7349), 64–67 (2011).
[CrossRef] [PubMed]

Opt. Commun. (1)

Y. Tang, Y. Yu, Y. Ye, U. Westergren, and S. He, “Design and optimization of an arbitrarily segmented traveling wave electrode for an ultrahigh speed electroabsorption modulator,” Opt. Commun. 281(20), 5177–5182 (2008).
[CrossRef]

Opt. Express (4)

Proc. IEEE (1)

D. A. Miller, “Rationale and challenges for optical interconnects to electronic chips,” Proc. IEEE 88(6), 728–749 (2000).
[CrossRef]

Other (1)

T. Tatsumi, K. Tanaka, S. Sawada, H. Fujita, and T. Abe, “1.3 μm, 56-Gbit/s EML Module target to 400GbE,” in Optical Fiber Communication Conference, OSA Technical Digest (Optical Society of America, 2012), paper OTh3F.4.

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Figures (6)

Fig. 1
Fig. 1

Detailed structures of the III-V epitaxy stack and the SOI wafer.

Fig. 2
Fig. 2

Calculated modulation responses and reflections for 100μm long modulators using (a) a lumped electrode, (b) a traveling-wave electrode with a matched load of 18 Ω, (c) a traveling-wave electrode with a 50 Ω load and (d) a segmented electrode with a 50 Ω load. The insets show the schematics of the electrode configurations.

Fig. 3
Fig. 3

(a) Schematic of a distributed HSEAM. Inset: enlarged taper part without the probe. (b) Cross section of the modulation waveguide. It was exposed by an ion focused beam and the SEM image was taken with a 52þ tilt angle. (c) Top-view SEM image of a final sample.

Fig. 4
Fig. 4

Bias dependent transmission curves at different input wavelengths.

Fig. 5
Fig. 5

(a) Measured scattering parameters of the segmented electrode; (b) the measured and calculated modulation responses.

Fig. 6
Fig. 6

Measured 231-1 PRBS NRZ eye diagrams at 25 Gb/s, 40 Gb/s and 50 Gb/s for (a) 15 dB attenuated drive signal, (b) back to back optical signal and (c) optical signal after 16 km tranmssion. The modulator under test was biased at −4 V with an input wavelength at 1300 nm.

Equations (1)

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P×B= 1 4 V pp 2 Z in + I average V bias ,

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