Abstract

We report voltage-tunable 3-5 μm & 8-12 μm dual-band detection in the InAs/Al0.3Ga0.7As/In0.15Ga0.85As confinement-enhanced dots-in-a-well quantum dot infrared photodetectors. The capability in temperature sensing is also demonstrated. Distinct response peaks at 5.0 μm and 8.6 μm were observed in the photocurrent spectra with working temperature up to 140K. The two peaks correspond to the transition paths from the quantum dot ground state to the quantum well state and the quantum dot excited state, respectively. At 77K, the response ratio of the 8.6 μm peak over the 5.0 μm peak changes from 0.29 at −3V to 5.8 at + 4.8V. Excellent selectivity between the two peaks with bias voltage makes the device attractive for third-generation imaging systems with pixel-level multicolor functionality.

© 2012 OSA

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  1. A. Rogalski, J. Antoszewski, and L. Faraone, “Third-generation infrared photodetector arrays,” J. Appl. Phys. 105(9), 091101 (2009).
    [CrossRef]
  2. A. Majumdar, K. K. Choi, J. L. Reno, L. P. Rokhinson, and D. C. Tsui, “Electron transfer based voltage tunable two-color quantum well infrared photodetectors,” Infrared Phys. Technol. 44(5-6), 337–346 (2003).
    [CrossRef]
  3. B. F. Levine, “Quantum well infrared photodetectors,” J. Appl. Phys. 74(8), R1–R81 (1993).
    [CrossRef]
  4. Y. Arslan, S. U. Eker, M. Kaldirim, and C. Besikci, “Large format voltage tunable dual-band QWIP FPAs,” Infrared Phys. Technol. 52(6), 399–402 (2009).
    [CrossRef]
  5. P. Martyniuk, S. Krishna, and A. Rogalski, “Assessment of quantum dot infrared photodetectors for high temperature operation,” J. Appl. Phys. 104(3), 034314 (2008).
    [CrossRef]
  6. Z. Chen, E. T. Kim, and A. Madhukar, “Normal-incidence voltage- tunable middle- and long-wavelength infrared photoresponse in self-assembled InAs quantum dots,” Appl. Phys. Lett. 80(14), 2490–2492 (2002).
    [CrossRef]
  7. M. J. Meisner, J. Vaillancourt, and X. Lu, “Voltage-tunable dual-band InAs quantum-dot infrared photodetectors based on InAs quantum dots with different capping layers,” Semicond. Sci. Technol. 23(9), 095016 (2008).
    [CrossRef]
  8. G. Ariyawansa, A. G. U. Perera, G. Huang, and P. Bhattacharya, “Wavelength agile superlattice quantum dot infrared photodetector,” Appl. Phys. Lett. 94(13), 131109 (2009).
    [CrossRef]
  9. J. Huang, W. Ma, Y. Wei, Y. Zhang, Y. Huo, K. Cui, and L. Chen, “Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers,” Appl. Phys. Lett. 98(10), 103501 (2011).
    [CrossRef]
  10. H. S. Ling, S. Y. Wang, and C. P. Lee, “Spectral response and device performance tuning of long-wavelength InAs QDIPs,” Infrared Phys. Technol. 54(3), 233–236 (2011).
    [CrossRef]
  11. S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett. 86(19), 193501 (2005).
    [CrossRef]
  12. J. Vaillancourt, P. Vasinajindakaw, X. Lu, A. Stintz, J. Bundas, R. Cook, D. Burrows, K. Patnaude, R. Dennis, A. Reisinger, and M. Sundaram, “A voltage-tunable multispectral 320 × 256 InAs/GaAs quantum-dot infrared focal plane array,” Semicond. Sci. Technol. 24(4), 045008 (2009).
    [CrossRef]
  13. J. Andrews, W. Y. Jang, J. E. Pezoa, Y. D. Sharma, S. J. Lee, S. K. Noh, M. M. Hayat, S. Restaino, S. W. Teare, and S. Krishna, “Demonstration of a bias tunable quantum dots-in-a-well focal plane array,” Infrared Phys. Technol. 52(6), 380–384 (2009).
    [CrossRef]
  14. H. S. Ling, S. Y. Wang, C. P. Lee, and M. C. Lo, “High quantum efficiency dots-in-a-well quantum dot infrared photodetectors with AlGaAs confinement enhancing layer,” Appl. Phys. Lett. 92(19), 193506 (2008).
    [CrossRef]
  15. H.-S. Ling, S.-Y. Wang, C.-P. Lee, and M.-C. Lo, “Long-wavelength quantum-dot infrared photodetectors with operating temperature over 200K,” IEEE Photon. Technol. Lett. 21(2), 118–120 (2009).
    [CrossRef]
  16. S. Y. Wang, S. D. Lin, H. W. Wu, and C. P. Lee, “High performance InAs/GaAs quantum dot infrared photodetectors with AlGaAs current blocking layer,” Infrared Phys. Technol. 42(3-5), 473–477 (2001).
    [CrossRef]

2011 (2)

J. Huang, W. Ma, Y. Wei, Y. Zhang, Y. Huo, K. Cui, and L. Chen, “Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers,” Appl. Phys. Lett. 98(10), 103501 (2011).
[CrossRef]

H. S. Ling, S. Y. Wang, and C. P. Lee, “Spectral response and device performance tuning of long-wavelength InAs QDIPs,” Infrared Phys. Technol. 54(3), 233–236 (2011).
[CrossRef]

2009 (6)

G. Ariyawansa, A. G. U. Perera, G. Huang, and P. Bhattacharya, “Wavelength agile superlattice quantum dot infrared photodetector,” Appl. Phys. Lett. 94(13), 131109 (2009).
[CrossRef]

A. Rogalski, J. Antoszewski, and L. Faraone, “Third-generation infrared photodetector arrays,” J. Appl. Phys. 105(9), 091101 (2009).
[CrossRef]

Y. Arslan, S. U. Eker, M. Kaldirim, and C. Besikci, “Large format voltage tunable dual-band QWIP FPAs,” Infrared Phys. Technol. 52(6), 399–402 (2009).
[CrossRef]

J. Vaillancourt, P. Vasinajindakaw, X. Lu, A. Stintz, J. Bundas, R. Cook, D. Burrows, K. Patnaude, R. Dennis, A. Reisinger, and M. Sundaram, “A voltage-tunable multispectral 320 × 256 InAs/GaAs quantum-dot infrared focal plane array,” Semicond. Sci. Technol. 24(4), 045008 (2009).
[CrossRef]

J. Andrews, W. Y. Jang, J. E. Pezoa, Y. D. Sharma, S. J. Lee, S. K. Noh, M. M. Hayat, S. Restaino, S. W. Teare, and S. Krishna, “Demonstration of a bias tunable quantum dots-in-a-well focal plane array,” Infrared Phys. Technol. 52(6), 380–384 (2009).
[CrossRef]

H.-S. Ling, S.-Y. Wang, C.-P. Lee, and M.-C. Lo, “Long-wavelength quantum-dot infrared photodetectors with operating temperature over 200K,” IEEE Photon. Technol. Lett. 21(2), 118–120 (2009).
[CrossRef]

2008 (3)

H. S. Ling, S. Y. Wang, C. P. Lee, and M. C. Lo, “High quantum efficiency dots-in-a-well quantum dot infrared photodetectors with AlGaAs confinement enhancing layer,” Appl. Phys. Lett. 92(19), 193506 (2008).
[CrossRef]

P. Martyniuk, S. Krishna, and A. Rogalski, “Assessment of quantum dot infrared photodetectors for high temperature operation,” J. Appl. Phys. 104(3), 034314 (2008).
[CrossRef]

M. J. Meisner, J. Vaillancourt, and X. Lu, “Voltage-tunable dual-band InAs quantum-dot infrared photodetectors based on InAs quantum dots with different capping layers,” Semicond. Sci. Technol. 23(9), 095016 (2008).
[CrossRef]

2005 (1)

S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett. 86(19), 193501 (2005).
[CrossRef]

2003 (1)

A. Majumdar, K. K. Choi, J. L. Reno, L. P. Rokhinson, and D. C. Tsui, “Electron transfer based voltage tunable two-color quantum well infrared photodetectors,” Infrared Phys. Technol. 44(5-6), 337–346 (2003).
[CrossRef]

2002 (1)

Z. Chen, E. T. Kim, and A. Madhukar, “Normal-incidence voltage- tunable middle- and long-wavelength infrared photoresponse in self-assembled InAs quantum dots,” Appl. Phys. Lett. 80(14), 2490–2492 (2002).
[CrossRef]

2001 (1)

S. Y. Wang, S. D. Lin, H. W. Wu, and C. P. Lee, “High performance InAs/GaAs quantum dot infrared photodetectors with AlGaAs current blocking layer,” Infrared Phys. Technol. 42(3-5), 473–477 (2001).
[CrossRef]

1993 (1)

B. F. Levine, “Quantum well infrared photodetectors,” J. Appl. Phys. 74(8), R1–R81 (1993).
[CrossRef]

Andrews, J.

J. Andrews, W. Y. Jang, J. E. Pezoa, Y. D. Sharma, S. J. Lee, S. K. Noh, M. M. Hayat, S. Restaino, S. W. Teare, and S. Krishna, “Demonstration of a bias tunable quantum dots-in-a-well focal plane array,” Infrared Phys. Technol. 52(6), 380–384 (2009).
[CrossRef]

Annamalai, S.

S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett. 86(19), 193501 (2005).
[CrossRef]

Antoszewski, J.

A. Rogalski, J. Antoszewski, and L. Faraone, “Third-generation infrared photodetector arrays,” J. Appl. Phys. 105(9), 091101 (2009).
[CrossRef]

Ariyawansa, G.

G. Ariyawansa, A. G. U. Perera, G. Huang, and P. Bhattacharya, “Wavelength agile superlattice quantum dot infrared photodetector,” Appl. Phys. Lett. 94(13), 131109 (2009).
[CrossRef]

Arslan, Y.

Y. Arslan, S. U. Eker, M. Kaldirim, and C. Besikci, “Large format voltage tunable dual-band QWIP FPAs,” Infrared Phys. Technol. 52(6), 399–402 (2009).
[CrossRef]

Besikci, C.

Y. Arslan, S. U. Eker, M. Kaldirim, and C. Besikci, “Large format voltage tunable dual-band QWIP FPAs,” Infrared Phys. Technol. 52(6), 399–402 (2009).
[CrossRef]

Bhattacharya, P.

G. Ariyawansa, A. G. U. Perera, G. Huang, and P. Bhattacharya, “Wavelength agile superlattice quantum dot infrared photodetector,” Appl. Phys. Lett. 94(13), 131109 (2009).
[CrossRef]

Bundas, J.

J. Vaillancourt, P. Vasinajindakaw, X. Lu, A. Stintz, J. Bundas, R. Cook, D. Burrows, K. Patnaude, R. Dennis, A. Reisinger, and M. Sundaram, “A voltage-tunable multispectral 320 × 256 InAs/GaAs quantum-dot infrared focal plane array,” Semicond. Sci. Technol. 24(4), 045008 (2009).
[CrossRef]

Burrows, D.

J. Vaillancourt, P. Vasinajindakaw, X. Lu, A. Stintz, J. Bundas, R. Cook, D. Burrows, K. Patnaude, R. Dennis, A. Reisinger, and M. Sundaram, “A voltage-tunable multispectral 320 × 256 InAs/GaAs quantum-dot infrared focal plane array,” Semicond. Sci. Technol. 24(4), 045008 (2009).
[CrossRef]

Campbell, J.

S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett. 86(19), 193501 (2005).
[CrossRef]

Carothers, D.

S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett. 86(19), 193501 (2005).
[CrossRef]

Chen, L.

J. Huang, W. Ma, Y. Wei, Y. Zhang, Y. Huo, K. Cui, and L. Chen, “Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers,” Appl. Phys. Lett. 98(10), 103501 (2011).
[CrossRef]

Chen, Z.

Z. Chen, E. T. Kim, and A. Madhukar, “Normal-incidence voltage- tunable middle- and long-wavelength infrared photoresponse in self-assembled InAs quantum dots,” Appl. Phys. Lett. 80(14), 2490–2492 (2002).
[CrossRef]

Choi, K. K.

A. Majumdar, K. K. Choi, J. L. Reno, L. P. Rokhinson, and D. C. Tsui, “Electron transfer based voltage tunable two-color quantum well infrared photodetectors,” Infrared Phys. Technol. 44(5-6), 337–346 (2003).
[CrossRef]

Cook, R.

J. Vaillancourt, P. Vasinajindakaw, X. Lu, A. Stintz, J. Bundas, R. Cook, D. Burrows, K. Patnaude, R. Dennis, A. Reisinger, and M. Sundaram, “A voltage-tunable multispectral 320 × 256 InAs/GaAs quantum-dot infrared focal plane array,” Semicond. Sci. Technol. 24(4), 045008 (2009).
[CrossRef]

Cui, K.

J. Huang, W. Ma, Y. Wei, Y. Zhang, Y. Huo, K. Cui, and L. Chen, “Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers,” Appl. Phys. Lett. 98(10), 103501 (2011).
[CrossRef]

Dennis, R.

J. Vaillancourt, P. Vasinajindakaw, X. Lu, A. Stintz, J. Bundas, R. Cook, D. Burrows, K. Patnaude, R. Dennis, A. Reisinger, and M. Sundaram, “A voltage-tunable multispectral 320 × 256 InAs/GaAs quantum-dot infrared focal plane array,” Semicond. Sci. Technol. 24(4), 045008 (2009).
[CrossRef]

Dowd, P.

S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett. 86(19), 193501 (2005).
[CrossRef]

Eker, S. U.

Y. Arslan, S. U. Eker, M. Kaldirim, and C. Besikci, “Large format voltage tunable dual-band QWIP FPAs,” Infrared Phys. Technol. 52(6), 399–402 (2009).
[CrossRef]

Faraone, L.

A. Rogalski, J. Antoszewski, and L. Faraone, “Third-generation infrared photodetector arrays,” J. Appl. Phys. 105(9), 091101 (2009).
[CrossRef]

Forman, D.

S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett. 86(19), 193501 (2005).
[CrossRef]

Gray, A.

S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett. 86(19), 193501 (2005).
[CrossRef]

Hayat, M. M.

J. Andrews, W. Y. Jang, J. E. Pezoa, Y. D. Sharma, S. J. Lee, S. K. Noh, M. M. Hayat, S. Restaino, S. W. Teare, and S. Krishna, “Demonstration of a bias tunable quantum dots-in-a-well focal plane array,” Infrared Phys. Technol. 52(6), 380–384 (2009).
[CrossRef]

Huang, G.

G. Ariyawansa, A. G. U. Perera, G. Huang, and P. Bhattacharya, “Wavelength agile superlattice quantum dot infrared photodetector,” Appl. Phys. Lett. 94(13), 131109 (2009).
[CrossRef]

Huang, J.

J. Huang, W. Ma, Y. Wei, Y. Zhang, Y. Huo, K. Cui, and L. Chen, “Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers,” Appl. Phys. Lett. 98(10), 103501 (2011).
[CrossRef]

Huo, Y.

J. Huang, W. Ma, Y. Wei, Y. Zhang, Y. Huo, K. Cui, and L. Chen, “Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers,” Appl. Phys. Lett. 98(10), 103501 (2011).
[CrossRef]

Jang, W. Y.

J. Andrews, W. Y. Jang, J. E. Pezoa, Y. D. Sharma, S. J. Lee, S. K. Noh, M. M. Hayat, S. Restaino, S. W. Teare, and S. Krishna, “Demonstration of a bias tunable quantum dots-in-a-well focal plane array,” Infrared Phys. Technol. 52(6), 380–384 (2009).
[CrossRef]

Kaldirim, M.

Y. Arslan, S. U. Eker, M. Kaldirim, and C. Besikci, “Large format voltage tunable dual-band QWIP FPAs,” Infrared Phys. Technol. 52(6), 399–402 (2009).
[CrossRef]

Kim, E. T.

Z. Chen, E. T. Kim, and A. Madhukar, “Normal-incidence voltage- tunable middle- and long-wavelength infrared photoresponse in self-assembled InAs quantum dots,” Appl. Phys. Lett. 80(14), 2490–2492 (2002).
[CrossRef]

Krishna, S.

J. Andrews, W. Y. Jang, J. E. Pezoa, Y. D. Sharma, S. J. Lee, S. K. Noh, M. M. Hayat, S. Restaino, S. W. Teare, and S. Krishna, “Demonstration of a bias tunable quantum dots-in-a-well focal plane array,” Infrared Phys. Technol. 52(6), 380–384 (2009).
[CrossRef]

P. Martyniuk, S. Krishna, and A. Rogalski, “Assessment of quantum dot infrared photodetectors for high temperature operation,” J. Appl. Phys. 104(3), 034314 (2008).
[CrossRef]

S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett. 86(19), 193501 (2005).
[CrossRef]

Lee, C. P.

H. S. Ling, S. Y. Wang, and C. P. Lee, “Spectral response and device performance tuning of long-wavelength InAs QDIPs,” Infrared Phys. Technol. 54(3), 233–236 (2011).
[CrossRef]

H. S. Ling, S. Y. Wang, C. P. Lee, and M. C. Lo, “High quantum efficiency dots-in-a-well quantum dot infrared photodetectors with AlGaAs confinement enhancing layer,” Appl. Phys. Lett. 92(19), 193506 (2008).
[CrossRef]

S. Y. Wang, S. D. Lin, H. W. Wu, and C. P. Lee, “High performance InAs/GaAs quantum dot infrared photodetectors with AlGaAs current blocking layer,” Infrared Phys. Technol. 42(3-5), 473–477 (2001).
[CrossRef]

Lee, C.-P.

H.-S. Ling, S.-Y. Wang, C.-P. Lee, and M.-C. Lo, “Long-wavelength quantum-dot infrared photodetectors with operating temperature over 200K,” IEEE Photon. Technol. Lett. 21(2), 118–120 (2009).
[CrossRef]

Lee, S. J.

J. Andrews, W. Y. Jang, J. E. Pezoa, Y. D. Sharma, S. J. Lee, S. K. Noh, M. M. Hayat, S. Restaino, S. W. Teare, and S. Krishna, “Demonstration of a bias tunable quantum dots-in-a-well focal plane array,” Infrared Phys. Technol. 52(6), 380–384 (2009).
[CrossRef]

Levine, B. F.

B. F. Levine, “Quantum well infrared photodetectors,” J. Appl. Phys. 74(8), R1–R81 (1993).
[CrossRef]

Lin, S. D.

S. Y. Wang, S. D. Lin, H. W. Wu, and C. P. Lee, “High performance InAs/GaAs quantum dot infrared photodetectors with AlGaAs current blocking layer,” Infrared Phys. Technol. 42(3-5), 473–477 (2001).
[CrossRef]

Ling, H. S.

H. S. Ling, S. Y. Wang, and C. P. Lee, “Spectral response and device performance tuning of long-wavelength InAs QDIPs,” Infrared Phys. Technol. 54(3), 233–236 (2011).
[CrossRef]

H. S. Ling, S. Y. Wang, C. P. Lee, and M. C. Lo, “High quantum efficiency dots-in-a-well quantum dot infrared photodetectors with AlGaAs confinement enhancing layer,” Appl. Phys. Lett. 92(19), 193506 (2008).
[CrossRef]

Ling, H.-S.

H.-S. Ling, S.-Y. Wang, C.-P. Lee, and M.-C. Lo, “Long-wavelength quantum-dot infrared photodetectors with operating temperature over 200K,” IEEE Photon. Technol. Lett. 21(2), 118–120 (2009).
[CrossRef]

Liu, M.

S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett. 86(19), 193501 (2005).
[CrossRef]

Lo, M. C.

H. S. Ling, S. Y. Wang, C. P. Lee, and M. C. Lo, “High quantum efficiency dots-in-a-well quantum dot infrared photodetectors with AlGaAs confinement enhancing layer,” Appl. Phys. Lett. 92(19), 193506 (2008).
[CrossRef]

Lo, M.-C.

H.-S. Ling, S.-Y. Wang, C.-P. Lee, and M.-C. Lo, “Long-wavelength quantum-dot infrared photodetectors with operating temperature over 200K,” IEEE Photon. Technol. Lett. 21(2), 118–120 (2009).
[CrossRef]

Lu, X.

J. Vaillancourt, P. Vasinajindakaw, X. Lu, A. Stintz, J. Bundas, R. Cook, D. Burrows, K. Patnaude, R. Dennis, A. Reisinger, and M. Sundaram, “A voltage-tunable multispectral 320 × 256 InAs/GaAs quantum-dot infrared focal plane array,” Semicond. Sci. Technol. 24(4), 045008 (2009).
[CrossRef]

M. J. Meisner, J. Vaillancourt, and X. Lu, “Voltage-tunable dual-band InAs quantum-dot infrared photodetectors based on InAs quantum dots with different capping layers,” Semicond. Sci. Technol. 23(9), 095016 (2008).
[CrossRef]

Ma, W.

J. Huang, W. Ma, Y. Wei, Y. Zhang, Y. Huo, K. Cui, and L. Chen, “Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers,” Appl. Phys. Lett. 98(10), 103501 (2011).
[CrossRef]

Madhukar, A.

Z. Chen, E. T. Kim, and A. Madhukar, “Normal-incidence voltage- tunable middle- and long-wavelength infrared photoresponse in self-assembled InAs quantum dots,” Appl. Phys. Lett. 80(14), 2490–2492 (2002).
[CrossRef]

Majumdar, A.

A. Majumdar, K. K. Choi, J. L. Reno, L. P. Rokhinson, and D. C. Tsui, “Electron transfer based voltage tunable two-color quantum well infrared photodetectors,” Infrared Phys. Technol. 44(5-6), 337–346 (2003).
[CrossRef]

Martyniuk, P.

P. Martyniuk, S. Krishna, and A. Rogalski, “Assessment of quantum dot infrared photodetectors for high temperature operation,” J. Appl. Phys. 104(3), 034314 (2008).
[CrossRef]

Meisner, M. J.

M. J. Meisner, J. Vaillancourt, and X. Lu, “Voltage-tunable dual-band InAs quantum-dot infrared photodetectors based on InAs quantum dots with different capping layers,” Semicond. Sci. Technol. 23(9), 095016 (2008).
[CrossRef]

Noh, S. K.

J. Andrews, W. Y. Jang, J. E. Pezoa, Y. D. Sharma, S. J. Lee, S. K. Noh, M. M. Hayat, S. Restaino, S. W. Teare, and S. Krishna, “Demonstration of a bias tunable quantum dots-in-a-well focal plane array,” Infrared Phys. Technol. 52(6), 380–384 (2009).
[CrossRef]

Patnaude, K.

J. Vaillancourt, P. Vasinajindakaw, X. Lu, A. Stintz, J. Bundas, R. Cook, D. Burrows, K. Patnaude, R. Dennis, A. Reisinger, and M. Sundaram, “A voltage-tunable multispectral 320 × 256 InAs/GaAs quantum-dot infrared focal plane array,” Semicond. Sci. Technol. 24(4), 045008 (2009).
[CrossRef]

Perera, A. G. U.

G. Ariyawansa, A. G. U. Perera, G. Huang, and P. Bhattacharya, “Wavelength agile superlattice quantum dot infrared photodetector,” Appl. Phys. Lett. 94(13), 131109 (2009).
[CrossRef]

Pezoa, J. E.

J. Andrews, W. Y. Jang, J. E. Pezoa, Y. D. Sharma, S. J. Lee, S. K. Noh, M. M. Hayat, S. Restaino, S. W. Teare, and S. Krishna, “Demonstration of a bias tunable quantum dots-in-a-well focal plane array,” Infrared Phys. Technol. 52(6), 380–384 (2009).
[CrossRef]

Reisinger, A.

J. Vaillancourt, P. Vasinajindakaw, X. Lu, A. Stintz, J. Bundas, R. Cook, D. Burrows, K. Patnaude, R. Dennis, A. Reisinger, and M. Sundaram, “A voltage-tunable multispectral 320 × 256 InAs/GaAs quantum-dot infrared focal plane array,” Semicond. Sci. Technol. 24(4), 045008 (2009).
[CrossRef]

Reno, J. L.

A. Majumdar, K. K. Choi, J. L. Reno, L. P. Rokhinson, and D. C. Tsui, “Electron transfer based voltage tunable two-color quantum well infrared photodetectors,” Infrared Phys. Technol. 44(5-6), 337–346 (2003).
[CrossRef]

Restaino, S.

J. Andrews, W. Y. Jang, J. E. Pezoa, Y. D. Sharma, S. J. Lee, S. K. Noh, M. M. Hayat, S. Restaino, S. W. Teare, and S. Krishna, “Demonstration of a bias tunable quantum dots-in-a-well focal plane array,” Infrared Phys. Technol. 52(6), 380–384 (2009).
[CrossRef]

Rogalski, A.

A. Rogalski, J. Antoszewski, and L. Faraone, “Third-generation infrared photodetector arrays,” J. Appl. Phys. 105(9), 091101 (2009).
[CrossRef]

P. Martyniuk, S. Krishna, and A. Rogalski, “Assessment of quantum dot infrared photodetectors for high temperature operation,” J. Appl. Phys. 104(3), 034314 (2008).
[CrossRef]

Rokhinson, L. P.

A. Majumdar, K. K. Choi, J. L. Reno, L. P. Rokhinson, and D. C. Tsui, “Electron transfer based voltage tunable two-color quantum well infrared photodetectors,” Infrared Phys. Technol. 44(5-6), 337–346 (2003).
[CrossRef]

Sharma, Y. D.

J. Andrews, W. Y. Jang, J. E. Pezoa, Y. D. Sharma, S. J. Lee, S. K. Noh, M. M. Hayat, S. Restaino, S. W. Teare, and S. Krishna, “Demonstration of a bias tunable quantum dots-in-a-well focal plane array,” Infrared Phys. Technol. 52(6), 380–384 (2009).
[CrossRef]

Stintz, A.

J. Vaillancourt, P. Vasinajindakaw, X. Lu, A. Stintz, J. Bundas, R. Cook, D. Burrows, K. Patnaude, R. Dennis, A. Reisinger, and M. Sundaram, “A voltage-tunable multispectral 320 × 256 InAs/GaAs quantum-dot infrared focal plane array,” Semicond. Sci. Technol. 24(4), 045008 (2009).
[CrossRef]

Sun, K.

S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett. 86(19), 193501 (2005).
[CrossRef]

Sundaram, M.

J. Vaillancourt, P. Vasinajindakaw, X. Lu, A. Stintz, J. Bundas, R. Cook, D. Burrows, K. Patnaude, R. Dennis, A. Reisinger, and M. Sundaram, “A voltage-tunable multispectral 320 × 256 InAs/GaAs quantum-dot infrared focal plane array,” Semicond. Sci. Technol. 24(4), 045008 (2009).
[CrossRef]

Teare, S. W.

J. Andrews, W. Y. Jang, J. E. Pezoa, Y. D. Sharma, S. J. Lee, S. K. Noh, M. M. Hayat, S. Restaino, S. W. Teare, and S. Krishna, “Demonstration of a bias tunable quantum dots-in-a-well focal plane array,” Infrared Phys. Technol. 52(6), 380–384 (2009).
[CrossRef]

Tsui, D. C.

A. Majumdar, K. K. Choi, J. L. Reno, L. P. Rokhinson, and D. C. Tsui, “Electron transfer based voltage tunable two-color quantum well infrared photodetectors,” Infrared Phys. Technol. 44(5-6), 337–346 (2003).
[CrossRef]

Tumolillo, T.

S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett. 86(19), 193501 (2005).
[CrossRef]

Vaillancourt, J.

J. Vaillancourt, P. Vasinajindakaw, X. Lu, A. Stintz, J. Bundas, R. Cook, D. Burrows, K. Patnaude, R. Dennis, A. Reisinger, and M. Sundaram, “A voltage-tunable multispectral 320 × 256 InAs/GaAs quantum-dot infrared focal plane array,” Semicond. Sci. Technol. 24(4), 045008 (2009).
[CrossRef]

M. J. Meisner, J. Vaillancourt, and X. Lu, “Voltage-tunable dual-band InAs quantum-dot infrared photodetectors based on InAs quantum dots with different capping layers,” Semicond. Sci. Technol. 23(9), 095016 (2008).
[CrossRef]

Varangis, P.

S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett. 86(19), 193501 (2005).
[CrossRef]

Vasinajindakaw, P.

J. Vaillancourt, P. Vasinajindakaw, X. Lu, A. Stintz, J. Bundas, R. Cook, D. Burrows, K. Patnaude, R. Dennis, A. Reisinger, and M. Sundaram, “A voltage-tunable multispectral 320 × 256 InAs/GaAs quantum-dot infrared focal plane array,” Semicond. Sci. Technol. 24(4), 045008 (2009).
[CrossRef]

Wang, S. Y.

H. S. Ling, S. Y. Wang, and C. P. Lee, “Spectral response and device performance tuning of long-wavelength InAs QDIPs,” Infrared Phys. Technol. 54(3), 233–236 (2011).
[CrossRef]

H. S. Ling, S. Y. Wang, C. P. Lee, and M. C. Lo, “High quantum efficiency dots-in-a-well quantum dot infrared photodetectors with AlGaAs confinement enhancing layer,” Appl. Phys. Lett. 92(19), 193506 (2008).
[CrossRef]

S. Y. Wang, S. D. Lin, H. W. Wu, and C. P. Lee, “High performance InAs/GaAs quantum dot infrared photodetectors with AlGaAs current blocking layer,” Infrared Phys. Technol. 42(3-5), 473–477 (2001).
[CrossRef]

Wang, S.-Y.

H.-S. Ling, S.-Y. Wang, C.-P. Lee, and M.-C. Lo, “Long-wavelength quantum-dot infrared photodetectors with operating temperature over 200K,” IEEE Photon. Technol. Lett. 21(2), 118–120 (2009).
[CrossRef]

Wei, Y.

J. Huang, W. Ma, Y. Wei, Y. Zhang, Y. Huo, K. Cui, and L. Chen, “Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers,” Appl. Phys. Lett. 98(10), 103501 (2011).
[CrossRef]

Wu, H. W.

S. Y. Wang, S. D. Lin, H. W. Wu, and C. P. Lee, “High performance InAs/GaAs quantum dot infrared photodetectors with AlGaAs current blocking layer,” Infrared Phys. Technol. 42(3-5), 473–477 (2001).
[CrossRef]

Zhang, Y.

J. Huang, W. Ma, Y. Wei, Y. Zhang, Y. Huo, K. Cui, and L. Chen, “Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers,” Appl. Phys. Lett. 98(10), 103501 (2011).
[CrossRef]

Zilko, J.

S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett. 86(19), 193501 (2005).
[CrossRef]

Appl. Phys. Lett. (5)

Z. Chen, E. T. Kim, and A. Madhukar, “Normal-incidence voltage- tunable middle- and long-wavelength infrared photoresponse in self-assembled InAs quantum dots,” Appl. Phys. Lett. 80(14), 2490–2492 (2002).
[CrossRef]

G. Ariyawansa, A. G. U. Perera, G. Huang, and P. Bhattacharya, “Wavelength agile superlattice quantum dot infrared photodetector,” Appl. Phys. Lett. 94(13), 131109 (2009).
[CrossRef]

J. Huang, W. Ma, Y. Wei, Y. Zhang, Y. Huo, K. Cui, and L. Chen, “Two-color In0.4Ga0.6As/Al0.1Ga0.9As quantum dot infrared photodetector with double tunneling barriers,” Appl. Phys. Lett. 98(10), 103501 (2011).
[CrossRef]

S. Krishna, D. Forman, S. Annamalai, P. Dowd, P. Varangis, T. Tumolillo, A. Gray, J. Zilko, K. Sun, M. Liu, J. Campbell, and D. Carothers, “Demonstration of a 320×256 two-color focal plane array using InAs/InGaAs quantum dots in well detectors,” Appl. Phys. Lett. 86(19), 193501 (2005).
[CrossRef]

H. S. Ling, S. Y. Wang, C. P. Lee, and M. C. Lo, “High quantum efficiency dots-in-a-well quantum dot infrared photodetectors with AlGaAs confinement enhancing layer,” Appl. Phys. Lett. 92(19), 193506 (2008).
[CrossRef]

IEEE Photon. Technol. Lett. (1)

H.-S. Ling, S.-Y. Wang, C.-P. Lee, and M.-C. Lo, “Long-wavelength quantum-dot infrared photodetectors with operating temperature over 200K,” IEEE Photon. Technol. Lett. 21(2), 118–120 (2009).
[CrossRef]

Infrared Phys. Technol. (5)

S. Y. Wang, S. D. Lin, H. W. Wu, and C. P. Lee, “High performance InAs/GaAs quantum dot infrared photodetectors with AlGaAs current blocking layer,” Infrared Phys. Technol. 42(3-5), 473–477 (2001).
[CrossRef]

J. Andrews, W. Y. Jang, J. E. Pezoa, Y. D. Sharma, S. J. Lee, S. K. Noh, M. M. Hayat, S. Restaino, S. W. Teare, and S. Krishna, “Demonstration of a bias tunable quantum dots-in-a-well focal plane array,” Infrared Phys. Technol. 52(6), 380–384 (2009).
[CrossRef]

H. S. Ling, S. Y. Wang, and C. P. Lee, “Spectral response and device performance tuning of long-wavelength InAs QDIPs,” Infrared Phys. Technol. 54(3), 233–236 (2011).
[CrossRef]

A. Majumdar, K. K. Choi, J. L. Reno, L. P. Rokhinson, and D. C. Tsui, “Electron transfer based voltage tunable two-color quantum well infrared photodetectors,” Infrared Phys. Technol. 44(5-6), 337–346 (2003).
[CrossRef]

Y. Arslan, S. U. Eker, M. Kaldirim, and C. Besikci, “Large format voltage tunable dual-band QWIP FPAs,” Infrared Phys. Technol. 52(6), 399–402 (2009).
[CrossRef]

J. Appl. Phys. (3)

P. Martyniuk, S. Krishna, and A. Rogalski, “Assessment of quantum dot infrared photodetectors for high temperature operation,” J. Appl. Phys. 104(3), 034314 (2008).
[CrossRef]

B. F. Levine, “Quantum well infrared photodetectors,” J. Appl. Phys. 74(8), R1–R81 (1993).
[CrossRef]

A. Rogalski, J. Antoszewski, and L. Faraone, “Third-generation infrared photodetector arrays,” J. Appl. Phys. 105(9), 091101 (2009).
[CrossRef]

Semicond. Sci. Technol. (2)

J. Vaillancourt, P. Vasinajindakaw, X. Lu, A. Stintz, J. Bundas, R. Cook, D. Burrows, K. Patnaude, R. Dennis, A. Reisinger, and M. Sundaram, “A voltage-tunable multispectral 320 × 256 InAs/GaAs quantum-dot infrared focal plane array,” Semicond. Sci. Technol. 24(4), 045008 (2009).
[CrossRef]

M. J. Meisner, J. Vaillancourt, and X. Lu, “Voltage-tunable dual-band InAs quantum-dot infrared photodetectors based on InAs quantum dots with different capping layers,” Semicond. Sci. Technol. 23(9), 095016 (2008).
[CrossRef]

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Figures (4)

Fig. 1
Fig. 1

Schematic epitaxy structure of the sample.

Fig. 2
Fig. 2

PL and PLE spectra of the sample at 77K. The inset shows the 1 μm2 AFM image of the sample.

Fig. 3
Fig. 3

Photocurrent spectra of the sample at (a) 140K and (b) 77K.

Fig. 4
Fig. 4

The photocurrent ratio calculated for the sample at + 4.8V & −3V at 77K as a function of target temperature.

Equations (1)

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I ph+ I ph = R p+ R p R ˜ ( λ,+4.8V )εM( λ,T )dλ R ˜ ( λ,3.0V )εM( λ,T )dλ

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